TW267268B - A patterned mirror vcsel with adjustable selective etch region - Google Patents

A patterned mirror vcsel with adjustable selective etch region

Info

Publication number
TW267268B
TW267268B TW084105207A TW84105207A TW267268B TW 267268 B TW267268 B TW 267268B TW 084105207 A TW084105207 A TW 084105207A TW 84105207 A TW84105207 A TW 84105207A TW 267268 B TW267268 B TW 267268B
Authority
TW
Taiwan
Prior art keywords
selective etch
mirror stack
forming
etch region
patterned mirror
Prior art date
Application number
TW084105207A
Other languages
English (en)
Inventor
Grodzinski Piotr
S Lebby Michael
Hsing-Chung Lee
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of TW267268B publication Critical patent/TW267268B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18327—Structure being part of a DBR
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Drying Of Semiconductors (AREA)
TW084105207A 1994-06-15 1995-05-24 A patterned mirror vcsel with adjustable selective etch region TW267268B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/261,272 US5557626A (en) 1994-06-15 1994-06-15 Patterned mirror VCSEL with adjustable selective etch region

Publications (1)

Publication Number Publication Date
TW267268B true TW267268B (en) 1996-01-01

Family

ID=22992583

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084105207A TW267268B (en) 1994-06-15 1995-05-24 A patterned mirror vcsel with adjustable selective etch region

Country Status (4)

Country Link
US (1) US5557626A (zh)
JP (1) JP3745795B2 (zh)
KR (1) KR100341946B1 (zh)
TW (1) TW267268B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112567503A (zh) * 2018-07-20 2021-03-26 牛津仪器纳米技术工具有限公司 半导体蚀刻方法

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US5832017A (en) * 1996-03-15 1998-11-03 Motorola Inc Reliable near IR VCSEL
US5719892A (en) * 1996-04-23 1998-02-17 Motorola, Inc. Hybrid mirror structure for a visible emitting VCSEL
US5838705A (en) * 1996-11-04 1998-11-17 Motorola, Inc. Light emitting device having a defect inhibition layer
US6111902A (en) * 1997-05-09 2000-08-29 The Trustees Of Princeton University Organic semiconductor laser
US6160828A (en) * 1997-07-18 2000-12-12 The Trustees Of Princeton University Organic vertical-cavity surface-emitting laser
US6330262B1 (en) 1997-05-09 2001-12-11 The Trustees Of Princeton University Organic semiconductor lasers
US6061380A (en) * 1997-09-15 2000-05-09 Motorola, Inc. Vertical cavity surface emitting laser with doped active region and method of fabrication
US6044100A (en) * 1997-12-23 2000-03-28 Lucent Technologies Inc. Lateral injection VCSEL
US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array
US6327293B1 (en) * 1998-08-12 2001-12-04 Coherent, Inc. Optically-pumped external-mirror vertical-cavity semiconductor-laser
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6990135B2 (en) * 2002-10-28 2006-01-24 Finisar Corporation Distributed bragg reflector for optoelectronic device
US6905900B1 (en) 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
US7065124B2 (en) 2000-11-28 2006-06-20 Finlsar Corporation Electron affinity engineered VCSELs
US6836501B2 (en) * 2000-12-29 2004-12-28 Finisar Corporation Resonant reflector for increased wavelength and polarization control
US6782027B2 (en) 2000-12-29 2004-08-24 Finisar Corporation Resonant reflector for use with optoelectronic devices
US6727520B2 (en) * 2000-12-29 2004-04-27 Honeywell International Inc. Spatially modulated reflector for an optoelectronic device
TWI227799B (en) * 2000-12-29 2005-02-11 Honeywell Int Inc Resonant reflector for increased wavelength and polarization control
US6606199B2 (en) 2001-10-10 2003-08-12 Honeywell International Inc. Graded thickness optical element and method of manufacture therefor
EP1468476A1 (de) * 2002-01-25 2004-10-20 Infineon Technologies AG Laserdiode mit vertikalresonator und verfahren zu siener herstellung
US6965626B2 (en) 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
US6987791B2 (en) * 2002-10-30 2006-01-17 Finisar Corporation Long wavelength vertical cavity surface emitting lasers
US7170916B2 (en) * 2002-10-30 2007-01-30 Finisar Corporation Selectively etchable heterogeneous composite distributed Bragg reflector
US6813293B2 (en) * 2002-11-21 2004-11-02 Finisar Corporation Long wavelength VCSEL with tunnel junction, and implant
JP4069383B2 (ja) * 2003-03-18 2008-04-02 富士ゼロックス株式会社 表面発光型半導体レーザおよびその製造方法
US20040222363A1 (en) * 2003-05-07 2004-11-11 Honeywell International Inc. Connectorized optical component misalignment detection system
US7298942B2 (en) 2003-06-06 2007-11-20 Finisar Corporation Pluggable optical optic system having a lens fiber stop
US7433381B2 (en) 2003-06-25 2008-10-07 Finisar Corporation InP based long wavelength VCSEL
US7054345B2 (en) 2003-06-27 2006-05-30 Finisar Corporation Enhanced lateral oxidation
US7075962B2 (en) 2003-06-27 2006-07-11 Finisar Corporation VCSEL having thermal management
US7277461B2 (en) 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
US6961489B2 (en) 2003-06-30 2005-11-01 Finisar Corporation High speed optical system
US7149383B2 (en) 2003-06-30 2006-12-12 Finisar Corporation Optical system with reduced back reflection
US7210857B2 (en) 2003-07-16 2007-05-01 Finisar Corporation Optical coupling system
US20050013539A1 (en) * 2003-07-17 2005-01-20 Honeywell International Inc. Optical coupling system
US6887801B2 (en) * 2003-07-18 2005-05-03 Finisar Corporation Edge bead control method and apparatus
US7031363B2 (en) 2003-10-29 2006-04-18 Finisar Corporation Long wavelength VCSEL device processing
US7125733B2 (en) * 2004-01-13 2006-10-24 Infineon Technologies Ag Method for producing an optical emission module having at least two vertically emitting lasers
US20050201436A1 (en) * 2004-03-15 2005-09-15 Doug Collins Method for processing oxide-confined VCSEL semiconductor devices
US7372886B2 (en) * 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
US7920612B2 (en) * 2004-08-31 2011-04-05 Finisar Corporation Light emitting semiconductor device having an electrical confinement barrier near the active region
US7829912B2 (en) * 2006-07-31 2010-11-09 Finisar Corporation Efficient carrier injection in a semiconductor device
US7596165B2 (en) * 2004-08-31 2009-09-29 Finisar Corporation Distributed Bragg Reflector for optoelectronic device
CN101432936B (zh) 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
JP5005937B2 (ja) * 2006-03-24 2012-08-22 古河電気工業株式会社 面発光レーザ素子
US7505503B2 (en) * 2007-02-23 2009-03-17 Cosemi Technologies, Inc. Vertical cavity surface emitting laser (VCSEL) and related method
US8031752B1 (en) 2007-04-16 2011-10-04 Finisar Corporation VCSEL optimized for high speed data
JP5212686B2 (ja) * 2007-08-22 2013-06-19 ソニー株式会社 半導体レーザアレイの製造方法
US8031754B2 (en) * 2008-04-24 2011-10-04 The Furukawa Electric Co., Ltd. Surface emitting laser element, surface emitting laser element array, method of fabricating a surface emitting laser element
JP2016208049A (ja) * 2011-03-17 2016-12-08 株式会社リコー 面発光レーザ素子、原子発振器及び面発光レーザ素子の検査方法
CN110021875B (zh) 2018-01-09 2022-05-13 苏州乐琻半导体有限公司 表面发射激光器器件和包括其的发光器件

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US5258990A (en) * 1991-11-07 1993-11-02 The United States Of America As Represented By The Secretary Of The United States Department Of Energy Visible light surface emitting semiconductor laser
US5206871A (en) * 1991-12-27 1993-04-27 At&T Bell Laboratories Optical devices with electron-beam evaporated multilayer mirror
JP3052552B2 (ja) * 1992-03-31 2000-06-12 株式会社日立製作所 面発光型半導体レーザ
US5245622A (en) * 1992-05-07 1993-09-14 Bandgap Technology Corporation Vertical-cavity surface-emitting lasers with intra-cavity structures

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112567503A (zh) * 2018-07-20 2021-03-26 牛津仪器纳米技术工具有限公司 半导体蚀刻方法
US11961773B2 (en) 2018-07-20 2024-04-16 Oxford Instruments Nanotechnology Tools Limited Semiconductor etching methods

Also Published As

Publication number Publication date
JPH08181393A (ja) 1996-07-12
JP3745795B2 (ja) 2006-02-15
US5557626A (en) 1996-09-17
KR960003000A (ko) 1996-01-26
KR100341946B1 (ko) 2002-11-23

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