JPS5780789A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5780789A
JPS5780789A JP15744980A JP15744980A JPS5780789A JP S5780789 A JPS5780789 A JP S5780789A JP 15744980 A JP15744980 A JP 15744980A JP 15744980 A JP15744980 A JP 15744980A JP S5780789 A JPS5780789 A JP S5780789A
Authority
JP
Japan
Prior art keywords
layer
type
semiconductor laser
laser device
algaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15744980A
Other languages
Japanese (ja)
Inventor
Kaname Otaki
Kenichi Yamanaka
Shigeki Horiuchi
Saburou Takamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15744980A priority Critical patent/JPS5780789A/en
Publication of JPS5780789A publication Critical patent/JPS5780789A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To improve the yield of a semiconductor laser device by sequentially forming a p type layer and an n type layer having forbidden band width wider than an active layer on a p type clad layer, and forming a V-shaped groove to reach a p type layer readily controlled in etching through the n type layer. CONSTITUTION:An n type AlGaAs layer 2, a p type GaAs active layer 3 and a p type AlGaAs clad layer 4 are sequentially formed on an n type GaAs substrate 1, a P type GaAs layer 11 and an n type AlGaAs layer 12 are formed on the layer 4, and an n type AlGaAs layer 13 is further formed on the layer 12. The forbidded band width of the layer 12 is formed wider than the layer 3, and a V-shaped groove 7a reaching the layer 11 at the end is formed through the layer 12 to reach the layer 11 at the end of the groove 7a, thereby improving the yield of the semiconductor laser device.
JP15744980A 1980-11-07 1980-11-07 Semiconductor laser device Pending JPS5780789A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15744980A JPS5780789A (en) 1980-11-07 1980-11-07 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15744980A JPS5780789A (en) 1980-11-07 1980-11-07 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5780789A true JPS5780789A (en) 1982-05-20

Family

ID=15649896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15744980A Pending JPS5780789A (en) 1980-11-07 1980-11-07 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5780789A (en)

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