TW233373B - - Google Patents
Info
- Publication number
- TW233373B TW233373B TW083104581A TW83104581A TW233373B TW 233373 B TW233373 B TW 233373B TW 083104581 A TW083104581 A TW 083104581A TW 83104581 A TW83104581 A TW 83104581A TW 233373 B TW233373 B TW 233373B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22193290 | 1990-08-23 | ||
JP22193390 | 1990-08-23 | ||
JP3175391A JPH04363059A (ja) | 1990-08-23 | 1991-07-16 | 半導体装置およびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW233373B true TW233373B (zh) | 1994-11-01 |
Family
ID=27324098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW083104581A TW233373B (zh) | 1990-08-23 | 1991-08-15 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5250447A (zh) |
JP (1) | JPH04363059A (zh) |
KR (1) | KR920005324A (zh) |
TW (1) | TW233373B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106158930A (zh) * | 2015-04-28 | 2016-11-23 | 北大方正集团有限公司 | 高频晶体管 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5334549A (en) * | 1993-08-13 | 1994-08-02 | Texas Instruments Incorporated | BiCMOS process that supports merged devices |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5065208A (en) * | 1987-01-30 | 1991-11-12 | Texas Instruments Incorporated | Integrated bipolar and CMOS transistor with titanium nitride interconnections |
US5128740A (en) * | 1988-11-17 | 1992-07-07 | Hitachi, Ltd. | Semiconductor integrated circuit device with isolation grooves and protruding portions |
JP2509690B2 (ja) * | 1989-02-20 | 1996-06-26 | 株式会社東芝 | 半導体装置 |
-
1991
- 1991-07-16 JP JP3175391A patent/JPH04363059A/ja active Pending
- 1991-08-14 US US07/744,853 patent/US5250447A/en not_active Expired - Lifetime
- 1991-08-15 TW TW083104581A patent/TW233373B/zh active
- 1991-08-20 KR KR1019910014303A patent/KR920005324A/ko not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106158930A (zh) * | 2015-04-28 | 2016-11-23 | 北大方正集团有限公司 | 高频晶体管 |
CN106158930B (zh) * | 2015-04-28 | 2019-05-14 | 北大方正集团有限公司 | 高频晶体管 |
Also Published As
Publication number | Publication date |
---|---|
KR920005324A (ko) | 1992-03-28 |
US5250447A (en) | 1993-10-05 |
JPH04363059A (ja) | 1992-12-15 |