TW202343147A - Auxiliary exposure device, exposure method, and memory medium - Google Patents
Auxiliary exposure device, exposure method, and memory medium Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 58
- 239000000758 substrate Substances 0.000 claims abstract description 239
- 230000002093 peripheral effect Effects 0.000 claims abstract description 170
- 238000012545 processing Methods 0.000 claims description 62
- 239000004973 liquid crystal related substance Substances 0.000 claims description 35
- 230000032258 transport Effects 0.000 claims description 18
- 238000005286 illumination Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 description 137
- 238000010586 diagram Methods 0.000 description 25
- 238000001816 cooling Methods 0.000 description 12
- 238000001514 detection method Methods 0.000 description 10
- 238000001035 drying Methods 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 238000011161 development Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000014509 gene expression Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2057—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
本公開關於輔助曝光裝置、曝光方法及記憶媒體。The present disclosure relates to an auxiliary exposure device, an exposure method and a memory medium.
以往,除了轉印例如遮罩圖案的普通曝光裝置之外,已知有對塗佈在待處理基板上的抗蝕劑膜進行局部曝光處理的輔助曝光裝置。Conventionally, in addition to general exposure devices that transfer, for example, mask patterns, auxiliary exposure devices that perform partial exposure processing of a resist film coated on a substrate to be processed are known.
例如,專利文獻1公開了一種輔助曝光裝置,其具備將多個LED(Light Emitting Diode)元件排列成一列狀的光源單元。
[先前技術文獻]
[專利文獻]
For example,
[專利文獻1] 日本特開2013-186191號公報[Patent Document 1] Japanese Patent Application Publication No. 2013-186191
[發明所欲解決的課題][Problem to be solved by the invention]
本公開提供了一種能夠提高待處理基板的每個產品區域周邊的曝光分辨率的技術。 [解決課題的手段] The present disclosure provides a technology capable of improving the exposure resolution around each product area of a substrate to be processed. [Means to solve the problem]
本公開的一態樣的輔助曝光裝置,係具備:搬送部;光源單元;聚光透鏡。搬送部,係沿第一方向搬送包含多個產品區域和位於每個產品區域周邊的周邊區域之待處理基板。光源單元,係藉由在與第一方向交叉的第二方向排列多個光源而形成,並且對沿第一方向搬送的待處理基板照射光。聚光透鏡,係配置在光源單元與待處理基板之間,並且使由光源單元向待處理基板的沿第二方向延伸的周邊區域照射的光沿第一方向聚光。 [發明效果] An auxiliary exposure device according to one aspect of the present disclosure includes: a transport unit; a light source unit; and a condenser lens. The transporting unit transports the substrate to be processed including a plurality of product areas and a peripheral area located around each product area along the first direction. The light source unit is formed by arranging a plurality of light sources in a second direction crossing the first direction, and irradiates light to the substrate to be processed transported in the first direction. The condenser lens is disposed between the light source unit and the substrate to be processed, and condenses the light irradiated from the light source unit to the peripheral area of the substrate to be processed extending in the second direction along the first direction. [Effects of the invention]
根據本公開,可以提高在待處理基板的每個產品區域周邊的曝光分辨率。According to the present disclosure, the exposure resolution around each product area of the substrate to be processed can be improved.
[實施形態][Embodiment]
以下參照附圖詳細說明實施本公開的噴嘴、輔助曝光裝置、曝光方法和記憶媒體的形態(以下稱為“實施形態”)。另外,本公開不限於該實施形態。另外,在不與處理內容相抵觸的範圍內,能夠適當組合各實施形態。另外,在以下的各實施形態中,對相同的部分標記相同的符號,並省略重複的說明。The form of the nozzle, the auxiliary exposure device, the exposure method, and the storage medium (hereinafter referred to as "embodiment") of the present disclosure will be described in detail below with reference to the drawings. In addition, this disclosure is not limited to this embodiment. In addition, each embodiment can be combined appropriately within the range which does not conflict with the processing content. In addition, in each of the following embodiments, the same parts are denoted by the same reference numerals, and repeated descriptions are omitted.
此外,在下述實施形態中,有可能使用諸如“恆定”、“正交”、“垂直”或“平行”等表述,但是這些表述不必是嚴格的“恆定”、“正交”、“垂直”或“平行”。亦即,上述各表述均允許例如製造精度和設置精度的偏差。In addition, in the following embodiments, expressions such as "constant", "orthogonal", "perpendicular" or "parallel" may be used, but these expressions do not necessarily need to be strictly "constant", "orthogonal" and "perpendicular". or "parallel". That is, each of the above expressions allows for deviations in manufacturing accuracy and installation accuracy, for example.
另外,在以下參照的各圖中,為了使說明容易理解,可以表示正交座標系,其中定義彼此正交的X軸方向、Y軸方向和Z軸方向,並且Z軸正方向是垂直向上的方向。In addition, in each of the figures referred to below, in order to make the explanation easy to understand, an orthogonal coordinate system may be represented in which the X-axis direction, the Y-axis direction, and the Z-axis direction that are orthogonal to each other are defined, and the positive Z-axis direction is vertically upward. direction.
這裡,前後方向定義為X軸正方向為前方,X軸負方向為後方,左右方向定義為Y軸正方向為左方,Y軸負方向為右方。上下方向定義為Z軸正方為上方,Z軸負方向為下方。Here, the front-to-back direction is defined as the positive direction of the X-axis is the front, the negative direction of the X-axis is the rear, and the left-right direction is defined as the positive direction of the Y-axis is the left, and the negative direction of the Y-axis is the right. The up and down directions are defined as the positive direction of the Z-axis is upward, and the negative direction of the Z-axis is downward.
順便提及,在使用LED元件的情況下,曝光分辨率可能受到從LED元件照射的光的擴展的限制。例如,當對待處理基板的位於每個產品區域周邊的周邊區域進行局部曝光處理時,由於從LED元件照射的光的照射範圍比周邊區域擴大並與每個產品區域重疊,因此每個產品區域周邊的曝光分辨率降低。Incidentally, in the case of using LED elements, the exposure resolution may be limited by the spread of light irradiated from the LED elements. For example, when the peripheral area of the substrate to be processed located at the periphery of each product area is subjected to partial exposure processing, since the irradiation range of the light irradiated from the LED element is expanded than the peripheral area and overlaps with each product area, the periphery of each product area The exposure resolution is reduced.
因此,期待提高待處理基板的每個產品區域周邊的曝光分辨率。Therefore, it is expected to improve the exposure resolution around each product area of the substrate to be processed.
(第一實施形態)
<基板處理系統的構成>
參照圖1說明第一實施形態的基板處理系統100的構成。圖1是表示第一實施形態的基板處理系統100的構成的示意性平面圖。
(First Embodiment)
<Structure of substrate processing system>
The structure of the
基板處理系統100設置在潔淨室內。基板處理系統100例如使用LCD(Liquid Crystal Display)用的玻璃基板G作為待處理基板,在LCD製造過程中進行光刻工程中的洗淨、塗佈抗蝕劑、預烘烤、顯影、後烘烤等一系列的處理。曝光處理由與基板處理系統100相鄰設置的外部曝光裝置20(EXP)進行。The
基板處理系統100具備收納盒站1和搬入部2(IN PASS)。基板處理系統100還具備洗淨裝置3(SCR)、第一乾燥部4(DR)、第一冷卻部5(COL)、塗佈裝置6(COT)、第二乾燥部7(DR)、預烘烤部8(PRE BAKE)和第二冷卻部9(COL)。基板處理系統100還具備介面站10和輔助曝光裝置11(AE)。基板處理系統100還具備顯影裝置12(DEV)、後烘烤部13(POST BAKE)、第三冷卻部14(COL)、檢測部15(IP)、搬出部16(OUT PASS)和控制部17。The
在收納盒站1與介面站10之間,設置有用於將玻璃基板G從收納盒站1搬送到介面站10的去路搬送路徑。在該去路搬送路徑上從收納盒站1到介面站10按此順序設置有搬入部2、洗淨裝置3、第一乾燥部4、第一冷卻部5、塗佈裝置6、第二乾燥部7、預烘烤部8和第二冷卻部9。Between the
在收納盒站1與介面站10之間,設置有用於將玻璃基板G從介面站10搬送到收納盒站1的返路搬送路徑。在該返路搬送路徑上從介面站10到收納盒站1按此順序設置有輔助曝光裝置11、顯影裝置12、後烘烤部13、第三冷卻部14、檢測部15和搬出部16。另外,去路搬送路徑和返路搬送路徑例如由輥搬送路徑等構成。A return transport path for transporting the glass substrate G from the
收納盒站1是用於搬入/搬出收納盒C的出入口,該收納盒C中收納有多層堆疊而成的多片玻璃基板G。收納盒站1具備可在一個水平方向(Y軸方向)上並排載置例如4個的收納盒載台1a,和用於相對於收納盒載台1a上的收納盒C搬入/搬出玻璃基板G的搬送裝置1b。搬送裝置1b具有保持玻璃基板G的搬送臂,可沿X、Y、Z、θ的4軸動作,在與相鄰的收納盒載台1a、搬入部2、搬出部16之間進行玻璃基板G的傳遞。The
介面站10具備搬送裝置10a。搬送裝置10a具有保持玻璃基板G的搬送臂,能夠沿著X、Y、Z、θ的4軸動作,在與鄰接的第二冷卻部9、輔助曝光裝置11、曝光裝置20之間可以進行玻璃基板G之傳遞。除了搬送裝置10a之外,在介面站10還可以設置有例如周邊曝光裝置或標題器等裝置。周邊曝光裝置進行用於除去顯影時附著在玻璃基板G的周邊部的抗蝕劑的曝光處理。標題器用於在玻璃基板G上的預定部位記錄預定的資訊。The
控制部17例如是CPU(Central Processing Unit),藉由讀出並執行記憶在記憶部(未圖示)中的程式(未圖示)來控制基板處理系統100整體。控制部17可以僅由硬體構成而不使用程式。The
圖2是表示基板處理系統100中針對1片玻璃基板G的所有工程的處理順序的流程圖。首先,在收納盒站1中,搬送裝置1b從收納盒載台1a上的任一收納盒C取出玻璃基板G,將取出的玻璃基板G搬入搬入部2(步驟S101)。FIG. 2 is a flowchart showing the processing procedures for all processes of one glass substrate G in the
搬入搬入部2的玻璃基板G在去路搬送路徑上搬送,被搬入洗淨裝置3,進行洗淨處理(步驟S102)。在此,洗淨裝置3藉由對在去路搬送路徑上水平移動的玻璃基板G進行刷洗或吹洗來去除基板表面的微粒狀污染物,之後,進行漂洗處理。結束在洗淨裝置3中的一連串的洗淨處理後,將玻璃基板G搬入第一乾燥部4。The glass substrate G carried into the
接著,玻璃基板G在第一乾燥部4中實施預定的乾燥處理(步驟S103)後,搬入第一冷卻部5冷卻至預定溫度(步驟S104)。之後,將玻璃基板G搬入塗佈裝置6。Next, the glass substrate G is subjected to a predetermined drying process in the first drying section 4 (step S103), and then is carried into the
在塗佈裝置6中,例如藉由使用狹縫噴嘴的無旋轉法在玻璃基板G的基板上表面(待處理面)塗佈抗蝕劑液(步驟S105)。之後,將玻璃基板G搬入第二乾燥部7,藉由例如減壓在常溫下進行乾燥處理(步驟S106)。In the
從第二乾燥部7搬出的玻璃基板G被搬入預烘烤部8,在預烘烤部8中被加熱至預定溫度(步驟S107)。藉由該處理,殘留在玻璃基板G上的抗蝕劑膜中的溶劑被蒸發除去,抗蝕劑膜與玻璃基板G的密合性增強。The glass substrate G carried out from the
接著,將玻璃基板G搬入第二冷卻部9,在第二冷卻部9中冷卻至預定溫度(步驟S108)。之後,玻璃基板G被介面站10的搬送裝置10a搬入曝光裝置20。另外,玻璃基板G也可以在搬入曝光裝置20之前搬入周邊曝光裝置(未圖示)。Next, the glass substrate G is carried into the
在曝光裝置20中,在玻璃基板G上的抗蝕劑上對預定的電路圖案進行曝光(步驟S109)。已經進行了圖案曝光後的玻璃基板G從曝光裝置20搬出,藉由介面站10的搬送裝置10a搬入輔助曝光裝置11。另外,玻璃基板G也可以在搬入輔助曝光裝置11之前搬入未圖示的標題器。In the
在輔助曝光裝置11中,對曝光處理後的玻璃基板G實施用於提高顯影處理後得到的抗蝕劑圖案的膜厚和線寬的均勻性的局部曝光處理(以下適當地稱為“輔助曝光處理”。)(步驟S110)。結束輔助曝光處理後的玻璃基板G被搬入顯影裝置12,在顯影裝置12中進行顯影、沖洗、乾燥等一系列的顯影處理(步驟S111)。In the
結束顯影處理後的玻璃基板G被搬入後烘烤部13,在後烘烤部13中進行顯影處理後的熱處理(步驟S112)。結果,殘留在玻璃基板G的抗蝕劑膜上的顯影液和洗淨液被蒸發除去,抗蝕劑圖案對基板的密合性提高。之後,將玻璃基板G搬入第三冷卻部14,在第三冷卻部14中冷卻至預定溫度(步驟S113)。The glass substrate G after completion of the development process is carried into the
接著,玻璃基板G被搬入檢測部15。在檢測部15中對玻璃基板G上的抗蝕圖案進行非接觸式的線寬檢測、膜質/膜厚檢測等(步驟S114)。檢測部15的檢測結果被輸出到控制部17並且由控制部17記憶在記憶部(未示出)中。Next, the glass substrate G is carried into the
搬出部16從檢測部15接受檢測結束後的玻璃基板G,並交接到收納盒站1的搬送裝置1b。搬送裝置1b將從搬出部16接收到的處理後的玻璃基板G收容在收納盒C內(步驟S115)。至此,對1片玻璃基板G的基板處理的全部工程結束。The unloading
<玻璃基板的構成> 接下來,參照圖3說明第一實施形態的玻璃基板G的構成。圖3是表示第一實施形態的玻璃基板G的構成的圖。如圖3所示,玻璃基板G構成為包括多個(此處為八個)產品區域A1和位於每個產品區域A1周邊的周邊區域A2。 <Construction of glass substrate> Next, the structure of the glass substrate G of the first embodiment will be described with reference to FIG. 3 . FIG. 3 is a diagram showing the structure of the glass substrate G according to the first embodiment. As shown in FIG. 3 , the glass substrate G is configured to include a plurality of (eight in this case) product areas A1 and a peripheral area A2 located around each product area A1.
產品區域A1為形成有與LCD對應的電路圖案的抗蝕劑的區域。多個產品區域A1以矩陣形式排列在玻璃基板G上。The product area A1 is an area in which a resist of a circuit pattern corresponding to the LCD is formed. A plurality of product areas A1 are arranged on the glass substrate G in a matrix.
周邊區域A2是形成有與驅動LCD的驅動電路對應的電路圖案(以下適當稱為“驅動電路圖案”)的抗蝕劑的區域。周邊區域A2包括第一周邊區域A2a和第二周邊區域A2b。第一周邊區域A2a在與輔助曝光裝置11中的玻璃基板G的掃描方向(X軸負方向,參照圖4)交叉的左右方向(Y軸方向)上延伸。第二周邊區域A2b在輔助曝光裝置11中的玻璃基板G的掃描方向(X軸負方向)延伸。在玻璃基板G上,在第一周邊區域A2a或第二周邊區域A2b中形成有驅動電路圖案。在本實施形態中,驅動電路圖案形成在三個第一周邊區域A2a中的每一個中。在圖3中,形成在三個第一周邊區域A2a中的每一個中的驅動電路圖案由斜線表示。The peripheral area A2 is a resist area in which a circuit pattern corresponding to a drive circuit for driving the LCD (hereinafter appropriately referred to as a "drive circuit pattern") is formed. The peripheral area A2 includes a first peripheral area A2a and a second peripheral area A2b. The first peripheral area A2a extends in the left-right direction (Y-axis direction) intersecting the scanning direction (negative X-axis direction, see FIG. 4 ) of the glass substrate G in the
<輔助曝光裝置的構成>
接著,參照圖4和圖5說明第一實施形態的輔助曝光裝置11的構成。圖4是從左右方向觀察第一實施形態的輔助曝光裝置11的圖。圖5是從前後方向觀察第一實施形態的輔助曝光裝置11的圖。
<Construction of auxiliary exposure device>
Next, the structure of the
如圖4所示,輔助曝光裝置11具備沿掃描方向(X軸負方向)搬送玻璃基板G的平流搬送部30、以及向由平流搬送部30搬送的玻璃基板G上的抗蝕劑照射光、具體而言是預定波長的紫外線(UV)的光源單元32。另外,輔助曝光裝置11還具備用於控制裝置內的每個部分的控制部17,以及用於記憶或保存控制部17使用的各種程式和數據的記憶體42。As shown in FIG. 4 , the
平流搬送部30具備例如藉由在搬送方向上敷設多個輥44而成的輥搬送路徑46,以及經由具有例如皮帶或齒輪的傳動機構48旋轉驅動每個輥44以在輥搬送路徑46上搬送玻璃基板G的掃描驅動部50。輥搬送路徑46構成圖1所示的基板處理系統100中從介面站10到收納盒站1的返路搬送路徑的一部分。The
平流搬送部30將曝光處理後的玻璃基板G平流搬送到輔助曝光裝置11內,並平流搬送玻璃基板G以在輔助曝光裝置11內進行輔助曝光處理的掃描。輔助曝光處理後的玻璃基板G以平流的方式被搬出至顯影裝置12。控制器17可以藉由設置在輥搬送路徑46的不同位置的位置感測器(未示出)來檢測或把握玻璃基板G的當前位置。The
光源單元32配置在輥搬送路徑46的上方,由未圖示的支撐部件支撐。如圖5所示,光源單元32藉由在與掃描方向交叉的左右方向(Y軸方向)上排列多個光源321而形成。光源321發射紫外線(UV)。光源321例如是LED元件。例如雷射束產生器等其他光源可以用作為光源321。光源單元32可以個別點亮和關閉多個光源321的每一個。該光源單元32向沿掃描方向(X軸負方向)搬送的玻璃基板G照射光。The
順便提及,在輔助曝光裝置11中,使用LED元件的光源321時的曝光分辨率可能受到從光源321照射的光的擴展的限制。例如,當對玻璃基板G的第一周邊區域A2a(參照圖3)進行局部曝光處理時,由於從光源321照射的光的照射範圍擴大到第一周邊區域A2a之外並與每個產品區域A1重疊,因此每個產品區域A1周邊的曝光分辨率降低。Incidentally, in the
因此,如圖4及圖5所示,本實施形態的輔助曝光裝置11在光源單元32與玻璃基板G之間配置有聚光透鏡34。聚光透鏡34例如是在掃描方向(X軸負方向)上具有聚光性的線性菲涅爾透鏡。聚光透鏡34將從光源單元32向玻璃基板G的第一周邊區域A2a照射的光沿掃描方向(X軸負方向)聚光。Therefore, as shown in FIGS. 4 and 5 , in the
具體而言,聚光透鏡34將從光源單元32照射的光沿掃描方向(X軸負方向)縮小並投射到通過光源單元32下方的玻璃基板G的第一周邊區域A2a。Specifically, the
藉由該聚光透鏡34能夠使從光源單元32照射的光的照射範圍收斂在玻璃基板G的第一周邊區域A2a的範圍內。換言之,藉由使用聚光透鏡34,能夠避免光源單元32照射到玻璃基板G的第一周邊區域A2a的光的照射範圍與每個產品區域A1重疊。因此,根據本實施形態的輔助曝光裝置11,與受限於從LED元件照射的光的擴展的已知的輔助曝光裝置相比,可以提高在玻璃基板G的每個產品區域A1周邊的曝光分辨率。特別是,根據本實施形態的輔助曝光裝置11,能夠提高沿玻璃基板G的左右方向(Y軸方向)延伸的第一周邊區域A2a的曝光分辨率。This
<輔助曝光裝置的處理動作>
接下來,參照圖6說明第一實施形態的輔助曝光裝置11的處理動作。圖6是表示第一實施形態的輔助曝光裝置11的處理動作的一例的說明圖。
<Processing operations of auxiliary exposure device>
Next, the processing operation of the
控制部17控制平流搬送部30以在掃描方向(X軸負方向)上搬送玻璃基板G。當對玻璃基板G的在左右方向(Y軸方向)延伸的第一周邊區域A2a進行輔助曝光處理時,在第一周邊區域A2a與聚光透鏡34彼此面對的位置處,控制部17使光源單元32將光照射到第一周邊區域A2a。結果,每次玻璃基板G的第一周邊區域A2a與聚光透鏡34彼此面對時,從光源單元32照射的光被聚光透鏡34沿掃描方向(X軸負方向)縮小並投射到第一周邊區域A2a上。在圖6的示例中,第一周邊區域A2a與聚光透鏡34彼此面對的三個位置由虛線表示。The
這樣,在對玻璃基板G的第一周邊區域A2a進行輔助曝光處理時,輔助曝光裝置11的控制部17可以在第一周邊區域A2a與聚光透鏡34面對的位置處控制光源單元32以使向第一周邊區域A2a照射光。藉由這樣,從光源單元32照射的光在第一周邊區域A2a與聚光透鏡34彼此面對的每個位置處被聚光透鏡34沿著掃描方向(X軸負方向)縮小,因此可以提高沿掃描方向的曝光分辨率。In this way, when performing the auxiliary exposure process on the first peripheral area A2a of the glass substrate G, the
(第二實施形態) 在玻璃基板G中,驅動電路圖案可以形成在第二周邊區域A2b而不是形成在第一周邊區域A2a中。在這種情況下,形成有驅動電路圖案的第二周邊區域A2b成為輔助曝光處理的對象。 (Second embodiment) In the glass substrate G, the driving circuit pattern may be formed in the second peripheral area A2b instead of the first peripheral area A2a. In this case, the second peripheral area A2b in which the drive circuit pattern is formed becomes the target of the auxiliary exposure process.
以下,在說明第二實施形態的輔助曝光裝置11的構成之前,參照圖7說明第二實施形態的玻璃基板G的構成。圖7是表示第二實施形態的玻璃基板G的構成的圖。在圖7所示的玻璃基板G中,在第二周邊區域A2b形成有驅動電路圖案。在本實施形態中,驅動電路圖案形成在三個第二周邊區域A2b中的每一個。在圖7中,形成在三個第二周邊區域A2b中的每一個的驅動電路圖案由斜線表示。Hereinafter, before describing the structure of the
第二實施形態的玻璃基板G的構成可以與圖3所示的第一實施形態的玻璃基板G的構成相同。亦即,在玻璃基板G中,驅動電路圖案可以形成在第一周邊區域A2a中。在這種情況下,形成有驅動電路圖案的第一周邊區域A2a成為輔助曝光處理的對象。用於確定成為輔助曝光處理的對象的區域的數據,係預先記憶在記憶體42中。The structure of the glass substrate G of the second embodiment may be the same as the structure of the glass substrate G of the first embodiment shown in FIG. 3 . That is, in the glass substrate G, the driving circuit pattern may be formed in the first peripheral area A2a. In this case, the first peripheral area A2a in which the drive circuit pattern is formed becomes the target of the auxiliary exposure process. Data for specifying the area to be targeted for the auxiliary exposure processing is stored in the
接著,參照圖8和圖9說明第二實施形態的輔助曝光裝置11的構成。圖8是從左右方向觀察第二實施形態的輔助曝光裝置11的圖。圖9是從前後方向觀察第二實施形態的輔助曝光裝置11的圖。Next, the structure of the
圖8和圖9所示的輔助曝光裝置11,除了圖4所示的構成以外,還具備局部光源33和局部聚光透鏡35。The
局部光源33被配置在與沿玻璃基板G的掃描方向(X軸負方向)延伸的第二周邊區域A2b對應的位置,由未圖示的支撐構件支撐。局部光源33的配置位置可以藉由位置調整機構(未圖示)進行微調。局部光源33照射紫外線(UV)。局部光源33例如是LED元件。例如雷射束產生器等其他光源可以用作為局部光源33。該局部光源33向沿掃描方向(X軸負方向)搬送的玻璃基板G照射光。The local
局部聚光透鏡35設置在局部光源33和玻璃基板G之間。局部聚光透鏡35例如是在左右方向(Y軸方向)上具有聚光性的線性菲涅耳透鏡。局部聚光透鏡35使從局部光源33向玻璃基板G的第二周邊區域A2b照射的光沿左右方向(Y軸方向)聚光。The
具體而言,局部聚光透鏡35使從局部光源33照射的光沿左右方向(Y軸方向)縮小並投射到通過局部光源33下方的玻璃基板G的第二周邊區域A2b。Specifically, the
藉由該局部聚光透鏡35,能夠使從局部光源33照射的光的照射範圍收斂在玻璃基板G的第二周邊區域A2b的範圍內。換句話說,藉由使用局部光源33和局部聚光透鏡35,可以避免局部光源33照射到玻璃基板G的第二周邊區域A2b的光的照射範圍與每個產品區域A1的重疊。因此,根據本實施形態的輔助曝光裝置11,與受限於從LED元件照射的光的擴展的已知的輔助曝光裝置相比,可以提高玻璃基板G的每個產品區域A1周邊的曝光分辨率。特別是,根據本實施形態的輔助曝光裝置11,能夠提高在玻璃基板G的掃描方向(X軸負方向)延伸的第二周邊區域A2b中的曝光分辨率。By this local condensing
接下來,將參照圖10說明第二實施形態的輔助曝光裝置11的處理動作。圖10是表示第二實施形態的輔助曝光裝置11的處理動作的一例的說明圖。Next, the processing operation of the
控制部17控制平流搬送部30以在掃描方向(X軸負方向)上搬送玻璃基板G。控制部17參照記憶體42,並根據用於確定輔助曝光處理的對象區域的數據,將第一周邊區域A2a和第二周邊區域A2b中的一方確定為輔助曝光處理的對象。The
當對玻璃基板G的沿左右方向(Y軸方向)延伸的第一周邊區域A2a進行輔助曝光處理時,在第一周邊區域A2a與聚光透鏡34彼此面對的位置處,藉由控制部17控制光源單元32將光照射到第一周邊區域A2a。結果,在玻璃基板G的第一周邊區域A2a與聚光透鏡34彼此面對的每個位置處,從光源單元32照射的光被聚光透鏡34沿掃描方向(X軸負方向)縮小並投射到第一周邊區域A2a上。在光源單元32向第一周邊區域A2a照射光的期間,控制器17關閉局部光源33。When the auxiliary exposure process is performed on the first peripheral area A2a extending in the left-right direction (Y-axis direction) of the glass substrate G, at the position where the first peripheral area A2a and the
另一方面,當對玻璃基板G的沿掃描方向(X軸負方向)延伸的第二周邊區域A2b進行輔助曝光處理時,如圖10所示,控制部17藉由局部光源33將光照射到第二周邊區域A2b。結果,從局部光源33照射的光被局部聚光透鏡35在左右方向(Y軸方向)上縮小並投射到第二周邊區域A2b上。當局部光源33將光照射到第二周邊區域A2b時,控制器17關閉光源單元32。在圖10的示例中,向第二周邊區域A2b照射光的局部光源33和局部聚光透鏡35的位置由虛線表示。On the other hand, when performing the auxiliary exposure process on the second peripheral area A2b extending in the scanning direction (X-axis negative direction) of the glass substrate G, as shown in FIG. 10 , the
這樣,在對玻璃基板G的沿掃描方向(X軸負方向)延伸的第二周邊區域A2b進行輔助曝光處理時,輔助曝光裝置11的控制部17可以控制局部光源33將光照射到第二周邊區域A2b。藉此,從局部光源33照射的光被局部聚光透鏡35在左右方向(Y軸方向)上縮小,從而可以提高在左右方向上的曝光分辨率。In this way, when performing the auxiliary exposure process on the second peripheral area A2b extending in the scanning direction (the negative direction of the Area A2b. Thereby, the light irradiated from the local
(第三實施形態)(Third embodiment)
接著,參照圖11和圖12說明第三實施形態的輔助曝光裝置11的構成。圖11是從左右方向觀察第三實施形態的輔助曝光裝置11的圖。圖12是從前後方向觀察第三實施形態的輔助曝光裝置11的圖。第三實施形態的輔助曝光裝置11與第一實施形態的不同之處在於,除了對玻璃基板G的第一周邊區域A2a進行輔助曝光處理的構成以外,還具有對玻璃基板G的第二周邊區域A2b進行輔助曝光處理的構成。Next, the structure of the
圖11和圖12所示的輔助曝光裝置11除了圖4所示的構成以外,還具備遮罩構件36和移動部37。The
遮罩構件36配置在聚光透鏡34與玻璃基板G之間。遮罩構件36屏蔽與沿玻璃基板G的掃描方向(X軸負方向)延伸的第二周邊區域A2b(參照圖7)相鄰的其他區域。遮罩構件36在與玻璃基板G的第二周邊區域A2b對應的位置處具有比第二周邊區域A2b窄的狹縫。The
移動部37使遮罩構件36在聚光透鏡34與玻璃基板G之間的處理位置與預定的退避位置之間移動。圖11和圖12的示例表示位於處理位置的遮罩構件36。The moving
如圖12所示,本實施形態的光源單元32經由位於處理位置的遮罩構件36向玻璃基板G的第二周邊區域A2b照射光。光源單元32照射的光穿過遮罩構件36的狹縫。藉由該遮罩構件36能夠將光源單元32照射的光的照射範圍收斂在玻璃基板G的第二周邊區域A2b的範圍內。換句話說,藉由使用遮罩構件36,能夠避免從光源單元32照射到玻璃基板G的第二周邊區域A2b的光的照射範圍與每個產品區域A1重疊。因此,根據本實施形態的輔助曝光裝置11,與受限於從LED元件照射的光的擴展的已知的輔助曝光裝置相比,可以提高在玻璃基板G的每個產品區域A1周邊的曝光分辨率。特別是,根據本實施形態的輔助曝光裝置11,能夠提高在玻璃基板G的掃描方向(X軸負方向)延伸的第二周邊區域A2b中的曝光分辨率。As shown in FIG. 12 , the
接下來,參照圖13說明第三實施形態的輔助曝光裝置11的處理動作。圖13是表示第三實施形態的輔助曝光裝置11的處理動作的一例的說明圖。Next, the processing operation of the
控制部17控制平流搬送部30以在掃描方向(X軸負方向)上搬送玻璃基板G。控制部17參照記憶體42,並根據用於確定輔助曝光處理的對象區域的數據,將第一周邊區域A2a和第二周邊區域A2b中的一方確定為輔助曝光處理的對象。The
當對玻璃基板G的沿左右方向(Y軸方向)延伸的第一周邊區域A2a進行輔助曝光處理時,控制部17藉由移動部37使遮罩構件36退避到退避位置。在圖13的例子中,位於退避位置的遮罩構件36用虛線表示。然後,控制部17使光源單元32在第一周邊區域A2a與聚光透鏡34彼此面對的位置處將光照射到第一周邊區域A2a。結果,在玻璃基板G的第一周邊區域A2a與聚光透鏡34彼此面對的每個位置處,從光源單元32照射的光被聚光透鏡34沿掃描方向(X軸負方向)縮小並投射到第一周邊區域A2a上。When performing the auxiliary exposure process on the first peripheral area A2a extending in the left-right direction (Y-axis direction) of the glass substrate G, the
另一方面,當對玻璃基板G的沿掃描方向(X軸負方向)延伸的第二周邊區域A2b進行輔助曝光處理時,如圖13所示,控制部17藉由移動部37使遮罩構件36從退避位置移動到處理位置。然後,控制部17使來自光源單元32的光經由位於處理位置的遮罩構件36照射到第二周邊區域A2b。結果,從光源單元32照射的光沿左右方向(Y軸方向)被遮罩構件36縮窄並且投射到第二周邊區域A2b上。On the other hand, when performing the auxiliary exposure process on the second peripheral area A2b extending in the scanning direction (X-axis negative direction) of the glass substrate G, as shown in FIG. 13 , the
這樣,在對玻璃基板G的沿掃描方向(X軸負方向)延伸的第二周邊區域A2b進行輔助曝光處理時,輔助曝光裝置11的控制部17可以控制光源單元32經由遮罩構件36將光照射到第二周邊區域A2b。藉此,從光源單元32照射的光被遮罩構件36在左右方向(Y軸方向)上變窄,從而可以提高在左右方向上的曝光分辨率。In this way, when performing the auxiliary exposure process on the second peripheral area A2b extending in the scanning direction (the negative direction of the The second peripheral area A2b is irradiated. Thereby, the light irradiated from the
(第四實施形態)
接著,參照圖14及圖15說明第四實施形態的輔助曝光裝置11的構成。圖14是從左右方向觀察第四實施形態的輔助曝光裝置11的圖。圖15是從前後方向觀察第四實施形態的輔助曝光裝置11的圖。第4實施形態的輔助曝光裝置11與第一實施形態的不同之處在於,除了對玻璃基板G的第一周邊區域A2a進行輔助曝光處理的構成以外,還具有對玻璃基板G的第二周邊區域A2b進行輔助曝光處理的構成。
(Fourth Embodiment)
Next, the structure of the
圖14和圖15所示的輔助曝光裝置11除了圖4所示的構成以外,還具備液晶模組38。The
液晶模組38配置在聚光透鏡34與玻璃基板G之間。液晶模組38是將多個透過型液晶元件排列成矩陣狀而形成的透過型液晶模組。液晶模組38可以在玻璃基板G未被屏蔽的透過模式,和與在玻璃基板G的掃描方向(X軸負方向)上延伸的第二周邊區域A2b(參照圖7)相鄰的其他區域被屏蔽的屏蔽模式之間進行切換。液晶模組38中的透過模式和屏蔽模式之間的轉換係根據控制部17的控制來執行。屏蔽模式的液晶模組38係在玻璃基板G的與第二周邊區域A2b對應的位置處形成寬度比第二周邊區域A2b窄的狹縫。在圖15的示例中示出了屏蔽模式的液晶模組38。The
如圖15所示,根據本實施形態的光源單元32,係經由屏蔽模式的液晶模組38將光照射到玻璃基板G的第二周邊區域A2b。光源單元32所照射的光透過液晶模組38的狹縫。在這樣的液晶模組38中,光源單元32照射的光的照射範圍能夠包含在玻璃基板G的第二周邊區域A2b的範圍內。換句話說,藉由使用液晶模組38,能夠避免從光源單元32照射到玻璃基板G的第二周邊區域A2b的光的照射範圍與每個產品區域A1重疊。因此,根據本實施形態的輔助曝光裝置11,與受到從LED元件照射的光的擴展之限制的已知的輔助曝光裝置相比,可以提高在玻璃基板G的每個產品區域A1周邊的曝光分辨率。特別是,根據本實施形態的輔助曝光裝置11,能夠提高在玻璃基板G的掃描方向(X軸負方向)延伸的第二周邊區域A2b中的曝光分辨率。As shown in FIG. 15 , according to the
接下來,參照圖16說明第四實施形態的輔助曝光裝置11的處理動作。圖16是表示第四實施形態的輔助曝光裝置11的處理動作的一例的說明圖。Next, the processing operation of the
控制部17控制平流搬送部30以在掃描方向(X軸負方向)上搬送玻璃基板G。控制部17參照記憶體42,並根據用於確定輔助曝光處理的對象區域的數據,將第一周邊區域A2a和第二周邊區域A2b中的一方確定為輔助曝光處理的對象。The
當對玻璃基板G的沿左右方向(Y軸方向)延伸的第一周邊區域A2a進行輔助曝光處理時,控制部17將液晶模組38切換至透過模式。然後,控制部17在第一周邊區域A2a與聚光透鏡34彼此面對的位置處使來自光源單元32的光經由透過模式的液晶模組38照射到第一周邊區域A2a。結果,在玻璃基板G的第一周邊區域A2a與聚光透鏡34彼此面對的每個位置處,從光源單元32照射的光被聚光透鏡34沿掃描方向(X軸負方向)縮小並投射到第一周邊區域A2a上。When performing the auxiliary exposure process on the first peripheral area A2a extending in the left-right direction (Y-axis direction) of the glass substrate G, the
另一方面,當對玻璃基板G的沿掃描方向(X軸負方向)延伸的第二周邊區域A2b進行輔助曝光處理時,如圖16所示,控制部17使液晶模組38切換至屏蔽模式。然後,控制部17使來自光源單元32的光經由屏蔽模式的液晶模組38照射到第二周邊區域A2b。結果,從光源單元32照射的光沿左右方向(Y軸方向)被液晶模組38變窄並且投射到第二周邊區域A2b上。On the other hand, when performing the auxiliary exposure process on the second peripheral area A2b extending in the scanning direction (negative direction of the X-axis) of the glass substrate G, as shown in FIG. 16 , the
這樣,在對玻璃基板G的沿掃描方向(X軸負方向)延伸的第二周邊區域A2b進行輔助曝光處理時,輔助曝光裝置11的控制部17可以使來自光源單元32的光經由液晶模組38照射到第二周邊區域A2b。藉此,從光源單元32照射的光被液晶模組38在左右方向(Y軸方向)上變窄,從而可以提高在左右方向上的曝光分辨率。In this way, when performing the auxiliary exposure process on the second peripheral area A2b extending in the scanning direction (the negative direction of the X-axis) of the glass substrate G, the
<變形例>
在上述第一實施形態中,說明了對玻璃基板G的沿左右方向(Y軸方向)延伸的第一周邊區域A2a進行輔助曝光處理的例子。然而,在沿掃描方向(X軸負方向)搬送玻璃基板G的期間,可以對第一周邊區域A2a和每個產品區域A1連續地執行輔助曝光處理。在這種情況下,例如,輔助曝光裝置11的控制部17可以在沿掃描方向(X軸負方向)搬送玻璃基板G的期間執行以下處理。亦即,控制部17在玻璃基板G的沿左右方向(Y軸方向)延伸的第一周邊區域A2a與聚光透鏡34面對的位置處使光源單元32以第一照度將光照射到第一周邊區域A2a。另外,控制部17在玻璃基板G的每個產品區域A1與聚光透鏡34面對的位置處使光源單元32向每個產品區域A1照射與第一照度不同的第二照度的光。這樣,在玻璃基板G沿掃描方向(X軸負方向)搬送的期間,藉由對第一周邊區域A2a和每個產品區域A1連續進行輔助曝光處理,可以提高輔助曝光處理的處理效率。
<Modification>
In the first embodiment described above, an example in which the auxiliary exposure process is performed on the first peripheral area A2a extending in the left-right direction (Y-axis direction) of the glass substrate G has been described. However, while the glass substrate G is conveyed in the scanning direction (X-axis negative direction), the auxiliary exposure process can be continuously performed on the first peripheral area A2a and each product area A1. In this case, for example, the
<其他變形例>
在上述各實施形態中,具備以平流方式搬送玻璃基板G的平流搬送部30,並且光源單元32固定在掃描方向上的固定位置。但是,也可以實現例如玻璃基板G被固定在載台上,光源單元32在載台上沿掃描方向移動的掃描方式,或者移動玻璃基板G和光源單元32兩者的掃描方式。
<Other modifications>
In each of the above-described embodiments, the horizontal
另外,在上述各實施形態中,待處理基板為FPD的用玻璃基板,但不限於此,還可以是其他平板顯示器用基板、半導體晶圓、有機EL、太陽能電池用的各種基板、CD基板、光罩、印刷基板等。In addition, in each of the above embodiments, the substrate to be processed is a glass substrate for FPD, but it is not limited to this and may also be other substrates for flat panel displays, semiconductor wafers, organic EL, various substrates for solar cells, CD substrates, Photomask, printed circuit board, etc.
如上所述,實施形態的輔助曝光裝置(例如輔助曝光裝置11)具備搬送部(例如平流搬送部30)、光源單元(例如光源單元32)、和聚光透鏡(例如聚光透鏡34)。搬送部沿第一方向(例如掃描方向)搬送包括多個產品區域(例如產品區域A1)和位於每個產品區域周邊的周邊區域(例如周邊區域A2)的待處理基板(例如玻璃基板G)。光源單元藉由在與第一方向交叉的第二方向(例如左右方向)上排列多個光源(例如光源321)而形成,並將光照射到在第一方向上搬送的待處理基板。聚光透鏡設置在光源單元與待處理基板之間,並且使從光源單元照射到沿待處理基板的第二方向延伸的周邊區域(第一周邊區域A2a)的光沿著第一方向聚光。因此,根據實施形態的輔助曝光裝置,能夠提高在待處理基板的每個產品區域周邊的曝光分辨率。As described above, the auxiliary exposure device (eg, auxiliary exposure device 11) of the embodiment includes a conveyance unit (eg, advection conveyance unit 30), a light source unit (eg, light source unit 32), and a condenser lens (eg, condenser lens 34). The transport unit transports a substrate to be processed (eg, glass substrate G) including a plurality of product areas (eg, product area A1) and a peripheral area (eg, peripheral area A2) located around each product area in a first direction (eg, scanning direction). The light source unit is formed by arranging a plurality of light sources (eg, light source 321) in a second direction (eg, left-right direction) that intersects the first direction, and irradiates light to the substrate to be processed transported in the first direction. The condenser lens is provided between the light source unit and the substrate to be processed, and condenses light irradiated from the light source unit to a peripheral area (first peripheral area A2a) extending in the second direction of the substrate to be processed along the first direction. Therefore, according to the auxiliary exposure device of the embodiment, the exposure resolution around each product area of the substrate to be processed can be improved.
另外,實施形態的輔助曝光裝置還可以具備局部光源(例如局部光源33)和局部聚光透鏡(例如局部聚光透鏡35)。局部光源可以設置在與待處理基板沿第一方向延伸的周邊區域(例如第二周邊區域A2b)對應的位置,並且照射光到沿第一方向搬送的待處理基板。局部聚光透鏡設置於局部光源與待處理基板之間,並且可以沿第二方向聚光從局部光源照射到沿待處理基板的第一方向延伸的周邊區域的光。因此,根據實施形態的輔助曝光裝置,能夠提高在待處理基板的沿第一方向延伸的周邊區域的曝光分辨率。In addition, the auxiliary exposure device of the embodiment may further include a local light source (for example, the local light source 33) and a local condenser lens (for example, the local condenser lens 35). The local light source may be disposed at a position corresponding to a peripheral area (for example, the second peripheral area A2b) of the substrate to be processed extending along the first direction, and irradiate light to the substrate to be processed transported along the first direction. The local condensing lens is disposed between the local light source and the substrate to be processed, and can condense the light irradiated from the local light source to the peripheral area extending along the first direction of the substrate to be processed along the second direction. Therefore, according to the auxiliary exposure device of the embodiment, the exposure resolution in the peripheral area extending in the first direction of the substrate to be processed can be improved.
此外,實施形態的輔助曝光裝置還可以具備控制各部的控制部(例如控制部17)。在對待處理基板的沿第二方向上延伸的周邊區域進行曝光處理(例如局部曝光處理)時,控制部可以在周邊區域和聚光透鏡彼此面對的位置使來自光源單元的光照射到周邊區域。另外,在對待處理基板的沿第一方向上延伸的周邊區域進行曝光處理時,控制部可以使來自局部光源的光照射到周邊區域。因此,根據實施形態的輔助曝光裝置,由於從局部光源照射的光被局部聚光透鏡沿第二方向縮小,因此可以提高沿第二方向的曝光分辨率。In addition, the auxiliary exposure apparatus of the embodiment may further include a control unit (for example, the control unit 17) that controls each unit. When performing exposure processing (for example, partial exposure processing) on the peripheral area extending in the second direction of the substrate to be processed, the control part may irradiate the peripheral area with light from the light source unit at a position where the peripheral area and the condenser lens face each other. . In addition, when performing exposure processing on the peripheral area extending in the first direction of the substrate to be processed, the control unit may irradiate the peripheral area with light from the local light source. Therefore, according to the auxiliary exposure device of the embodiment, since the light irradiated from the local light source is reduced in the second direction by the local condenser lens, the exposure resolution in the second direction can be improved.
此外,實施形態的輔助曝光裝置也可以具備遮罩構件(例如遮罩構件36),該遮罩構件設置在聚光透鏡與待處理基板之間並且屏蔽與沿待處理基板的第一方向延伸的周邊區域相鄰的其他區域。此外,光源單元可以經由遮罩構件將光照射在待處理基板的沿第一方向上延伸的周邊區域。因此,根據實施形態的輔助曝光裝置,能夠提高被處理基板的沿第一方向延伸的周邊區域的曝光分辨率。In addition, the auxiliary exposure device of the embodiment may also be equipped with a mask member (for example, the mask member 36) that is provided between the condenser lens and the substrate to be processed and shields the lens extending in the first direction of the substrate to be processed. Surrounding areas are adjacent to other areas. Furthermore, the light source unit may irradiate light to a peripheral area of the substrate to be processed extending in the first direction via the mask member. Therefore, according to the auxiliary exposure device of the embodiment, the exposure resolution of the peripheral area extending in the first direction of the substrate to be processed can be improved.
此外,實施形態的輔助曝光裝置還具備:移動部(例如移動部37),其使遮罩構件在聚光透鏡和待處理基板之間的處理位置與預定的退避位置之間移動;及控制各部的控制部(例如控制部17)。當對待處理基板的沿第二方向延伸的周邊區域進行曝光處理時,控制部藉由移動部使遮罩構件退避至退避位置,並且在聚光透鏡與周邊區域彼此面對的位置處來自光源單元的光可以照射到周邊區域。進而,在對待處理基板的沿第一方向延伸的周邊區域進行曝光處理時,控制部藉由移動部使遮罩構件從退避位置移動到處理位置,並且使來自光源單元的光經由位於處理位置的遮罩構件照射到周邊區域。因此,根據實施形態的輔助曝光裝置,由於從光源單元照射的光被遮罩構件沿第二方向變窄,所以可以提高沿第二方向的曝光分辨率。In addition, the auxiliary exposure apparatus of the embodiment further includes: a moving part (for example, the moving part 37) that moves the mask member between the processing position and a predetermined retreat position between the condenser lens and the substrate to be processed; and controlling each part. control unit (for example, control unit 17). When the peripheral area extending in the second direction of the substrate to be processed is exposed, the control section retracts the mask member to the retracted position by the moving section, and the light source unit ejects light from the light source unit at a position where the condenser lens and the peripheral area face each other. of light can illuminate the surrounding area. Furthermore, when performing exposure processing on the peripheral area extending in the first direction of the substrate to be processed, the control unit moves the mask member from the retreat position to the processing position through the moving unit, and causes the light from the light source unit to pass through the processing position. The mask member illuminates the surrounding area. Therefore, according to the auxiliary exposure device of the embodiment, since the light irradiated from the light source unit is narrowed in the second direction by the mask member, the exposure resolution in the second direction can be improved.
進一步地,實施形態的輔助曝光裝置還具備:液晶模組(例如液晶模組38),其配置於聚光透鏡與待處理基板之間,並且可以在不屏蔽待處理基板的第一模式(例如透過模式)和屏蔽與在待處理基板的第一方向上延伸的周邊區域相鄰的其他區域的第二模式(例如屏蔽模式)之間進行切換。此外,光源單元可以經由第二模式的液晶模組照射光到沿待處理基板的第一方向延伸的周邊區域。因此,根據實施形態的輔助曝光裝置,能夠提高在待處理基板的沿第一方向延伸的周邊區域的曝光分辨率。Furthermore, the auxiliary exposure device of the embodiment further includes: a liquid crystal module (for example, liquid crystal module 38), which is arranged between the condenser lens and the substrate to be processed, and can operate in a first mode (for example, in which the substrate to be processed is not shielded) Switching is performed between a transmission mode) and a second mode (eg, shielding mode) for shielding other areas adjacent to the peripheral area extending in the first direction of the substrate to be processed. In addition, the light source unit may irradiate light to a peripheral area extending along the first direction of the substrate to be processed via the second mode liquid crystal module. Therefore, according to the auxiliary exposure device of the embodiment, the exposure resolution in the peripheral area extending in the first direction of the substrate to be processed can be improved.
此外,實施形態的輔助曝光裝置還可以具備控制各部的控制部(例如控制部17)。當對待處理基板的沿第二方向延伸的周邊區域進行曝光處理時,控制部使液晶模組切換到第一模式,在聚光透鏡與周邊區域彼此面對的位置處,來自光源單元的光可以經由第一模式的液晶模組照射到周邊區域。另外,當對待處理基板的沿第一方向延伸的周邊區域進行曝光處理時,控制部使液晶模組切換到第二模式,來自光源單元的光可以經由第二模式的液晶模組照射到周邊區域。因此,根據實施形態的輔助曝光裝置,從光源單元照射的光被液晶模組沿第二方向變窄,從而可以提高沿第二方向的曝光分辨率。In addition, the auxiliary exposure apparatus of the embodiment may further include a control unit (for example, the control unit 17) that controls each unit. When the peripheral area extending in the second direction of the substrate to be processed is exposed, the control part switches the liquid crystal module to the first mode, and at a position where the condenser lens and the peripheral area face each other, the light from the light source unit can The surrounding area is irradiated through the first mode liquid crystal module. In addition, when the peripheral area extending along the first direction of the substrate to be processed is exposed, the control unit switches the liquid crystal module to the second mode, and the light from the light source unit can be irradiated to the peripheral area via the liquid crystal module in the second mode. . Therefore, according to the auxiliary exposure device of the embodiment, the light irradiated from the light source unit is narrowed in the second direction by the liquid crystal module, so that the exposure resolution in the second direction can be improved.
此外,實施形態的輔助曝光裝置還可以具備控制各部的控制部(例如控制部17)。在待處理基板沿第一方向搬送的期間,控制部在待處理基板沿第二方向延伸的周邊區域與聚光透鏡彼此面對的位置處,可以使來自光源單元的光以第一照度照射到周邊區域。進一步地,控制部可以在待處理基板的每個產品區域與聚光透鏡彼此面對的位置處使來自光源單元的光以不同於第一照度的第二照度照射到每個產品區域。因此,根據實施形態的輔助曝光裝置,能夠提高輔助曝光處理的處理效率。In addition, the auxiliary exposure apparatus of the embodiment may further include a control unit (for example, the control unit 17) that controls each unit. While the substrate to be processed is conveyed in the first direction, the control unit may irradiate the light from the light source unit with the first illuminance at a position where the peripheral area of the substrate to be processed extending in the second direction and the condenser lens face each other. surrounding area. Further, the control part may cause the light from the light source unit to irradiate each product area with a second illuminance different from the first illuminance at a position where each product area of the substrate to be processed and the condenser lens face each other. Therefore, according to the auxiliary exposure device of the embodiment, the processing efficiency of the auxiliary exposure process can be improved.
應當認為,本次公開的實施形態在所有方面都是示例性的,而不是限制性的。實際上,上述實施形態可以以許多不同的形態體現。此外,在不脫離所附的申請專利範圍的範圍和精神的情況下,可以以各種方式省略、替換或變更上述實施形態。It should be understood that the embodiments disclosed this time are illustrative in every respect and are not restrictive. In fact, the above embodiments can be embodied in many different forms. In addition, the above-described embodiments may be omitted, replaced or modified in various ways without departing from the scope and spirit of the appended claims.
11:輔助曝光裝置 17:控制部 30:平流搬送部 32:光源單元 33:局部光源 34:聚光透鏡 35:局部聚光透鏡 36:遮罩構件 37:移動部 38:液晶模組 100:基板處理系統 321:光源 A1:產品區域 A2:周邊區域 A2a:第一周邊區域 A2b:第二周邊區域 G:玻璃基板 11: Auxiliary exposure device 17:Control Department 30: Horizontal transport department 32:Light source unit 33: Local light source 34: condenser lens 35: Partial condenser lens 36: Mask component 37:Mobile Department 38:LCD module 100:Substrate processing system 321:Light source A1: Product area A2: Surrounding area A2a: First surrounding area A2b: Second surrounding area G:Glass substrate
[圖1]是表示第一實施形態的基板處理系統的構成的示意性平面圖。 [圖2]是表示基板處理系統中對一片玻璃基板的所有工程的處理順序的流程圖。 [圖3]是表示第一實施形態的玻璃基板的構成的圖。 [圖4]是從左右方向觀察第一實施形態的輔助曝光裝置的圖。 [圖5]是從前後方向觀察第一實施形態的輔助曝光裝置的圖。 [圖6]是表示第一實施形態的輔助曝光裝置的處理動作的一例的說明圖。 [圖7]是表示第二實施形態的玻璃基板的構成的圖。 [圖8]是從左右方向觀察第二實施形態的輔助曝光裝置的圖。 [圖9]是從前後方向觀察第二實施形態的輔助曝光裝置的圖。 [圖10]是表示第二實施形態的輔助曝光裝置的處理動作的一例的說明圖。 [圖11]是從左右方向觀察第三實施形態的輔助曝光裝置的圖。 [圖12]是從前後方向觀察第三實施形態的輔助曝光裝置的圖。 [圖13]是表示第三實施形態的輔助曝光裝置的處理動作的一例的說明圖。 [圖14]是從左右方向觀察第四實施形態的輔助曝光裝置的圖。 [圖15]是從前後方向觀察第四實施形態的輔助曝光裝置的圖。 [圖16]是表示第四實施形態的輔助曝光裝置的處理動作的一例的說明圖。 [Fig. 1] is a schematic plan view showing the structure of the substrate processing system according to the first embodiment. [Fig. 2] is a flowchart showing the processing sequence of all processes for one glass substrate in the substrate processing system. [Fig. 3] is a diagram showing the structure of the glass substrate according to the first embodiment. [Fig. 4] is a diagram of the auxiliary exposure device of the first embodiment viewed from the left and right directions. [Fig. 5] Fig. 5 is a diagram of the auxiliary exposure device according to the first embodiment when viewed from the front-to-back direction. [Fig. 6] is an explanatory diagram showing an example of the processing operation of the auxiliary exposure device according to the first embodiment. [Fig. 7] A diagram showing the structure of a glass substrate according to the second embodiment. [Fig. 8] Fig. 8 is a diagram of the auxiliary exposure device according to the second embodiment when viewed from the left-right direction. [Fig. 9] Fig. 9 is a diagram of the auxiliary exposure device according to the second embodiment when viewed from the front-to-back direction. [Fig. 10] Fig. 10 is an explanatory diagram showing an example of the processing operation of the auxiliary exposure device according to the second embodiment. [Fig. 11] Fig. 11 is a diagram of the auxiliary exposure device according to the third embodiment when viewed from the left and right direction. [Fig. 12] Fig. 12 is a diagram of the auxiliary exposure device according to the third embodiment when viewed from the front-to-back direction. [Fig. 13] Fig. 13 is an explanatory diagram showing an example of the processing operation of the auxiliary exposure device according to the third embodiment. [Fig. 14] Fig. 14 is a diagram of the auxiliary exposure device according to the fourth embodiment when viewed from the left-right direction. [Fig. 15] Fig. 15 is a diagram of the auxiliary exposure device according to the fourth embodiment when viewed from the front-to-back direction. [Fig. 16] Fig. 16 is an explanatory diagram showing an example of the processing operation of the auxiliary exposure device according to the fourth embodiment.
11:輔助曝光裝置 11: Auxiliary exposure device
17:控制部 17:Control Department
30:平流搬送部 30: Horizontal transport department
32:光源單元 32:Light source unit
34:聚光透鏡 34: condenser lens
42:記憶體 42:Memory
44:輥 44:Roller
46:輥搬送路徑 46:Roller conveyance path
48:傳動機構 48: Transmission mechanism
50:掃描驅動部 50:Scan driver department
G:玻璃基板 G:Glass substrate
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