TW202338037A - Dicing die bonding film - Google Patents

Abstract

Provided is a dicing die bonding film and the like including: a dicing tape having a base layer and an adhesive layer placed on the base layer; and a die bonding sheet placed on the dicing tape, in which an elastic modulus at 120 °C of the dicing tape is 0.10 MPa or more, and a heat shrinkage rate at 120 °C of the dicing tape is 6% or more.

Description

切晶黏晶膜Cut crystal adhesive film

本發明係關於一種例如於製造半導體裝置時使用之切晶黏晶膜。The present invention relates to a die-cut die-bonding film used, for example, in the manufacture of semiconductor devices.

先前，已知於半導體裝置之製造中所使用之切晶黏晶膜。此種切晶黏晶膜例如具備切晶帶、及積層於該切晶帶且要接著於晶圓之黏晶片。切晶帶具有基材層及與黏晶片接觸之黏著劑層。此種切晶黏晶膜於半導體裝置之製造中例如以如下方式使用。Previously, die-cut die-bonding films for use in the fabrication of semiconductor devices have been known. This type of die attach film includes, for example, a die strip, and a die attach chip that is laminated on the die strip and adheres to the wafer. The wafer cutting belt has a base material layer and an adhesive layer in contact with the wafer bonding wafer. This type of die-cut die-bonding film is used in the manufacturing of semiconductor devices, for example, in the following manner.

製造半導體裝置之方法通常具備：藉由高積體之電子電路於圓板狀裸晶圓之單面側形成電路面之前步驟；及自形成有電路面之半導體晶圓切出半導體晶片並進行組裝之後步驟。The method of manufacturing a semiconductor device generally includes the following steps: forming a circuit surface on one side of a disc-shaped bare wafer by using a high-integration electronic circuit; and cutting out semiconductor wafers from the semiconductor wafer with a circuit surface and assembling them. Next steps.

例如後步驟具有如下步驟：隱形切割步驟，利用雷射光於半導體晶圓上形成用於將半導體晶圓割斷成小半導體晶片(Die)之脆弱部位；安裝步驟，於半導體晶圓之與電路面相反側之面貼附黏晶片，經由黏晶片將半導體晶圓固定於切晶帶；擴展步驟，沿半導體晶圓之放射方向拉伸切晶帶，將形成有脆弱部位之半導體晶圓與黏晶片一起割斷，擴大相鄰之半導體晶片(Die)之間隔；拾取步驟，於黏晶片與黏著劑層之間剝離，將貼附有黏晶片之狀態之半導體晶片取出；黏晶步驟，將貼附有黏晶片之狀態之半導體晶片經由黏晶片接著於被接著體；硬化步驟，對接著於被接著體之黏晶片進行熱硬化處理。半導體裝置例如經過該等步驟而製造。For example, the latter steps include the following steps: a stealth cutting step, which uses laser light to form fragile parts on the semiconductor wafer for cutting the semiconductor wafer into small semiconductor wafers (Dies); and a mounting step, which is opposite to the circuit surface of the semiconductor wafer. The adhesive wafer is attached to the side surface, and the semiconductor wafer is fixed to the wafer cutting belt through the wafer adhesive wafer; in the extended step, the wafer cutting belt is stretched along the radial direction of the semiconductor wafer, and the semiconductor wafer with fragile parts is combined with the wafer bonding wafer. Cut off and expand the distance between adjacent semiconductor wafers (Dies); the picking step is to peel off the adhesive wafer and the adhesive layer, and take out the semiconductor wafer with the adhesive wafer attached; the die attaching step is to remove the adhesive wafer attached The semiconductor wafer in the wafer state is bonded to the bonded body through the die bonding wafer; in the hardening step, the bonding wafer bonded to the bonded body is thermally hardened. A semiconductor device is manufactured through these steps, for example.

於如上所述之半導體裝置之製造方法中，例如實施上述擴展步驟後，有時切晶帶於被割斷之複數個半導體晶片之周圍發生鬆弛，間隔暫時擴大之相鄰之半導體晶片彼此接觸。 針對此，已知一種切晶黏晶膜，其為了抑制如上所述之切晶帶之鬆弛並防止相鄰之半導體晶片之接觸，而特定了相對於以高溫加熱前之切晶帶之長度之加熱後之切晶帶的長度(例如專利文獻1)。 In the manufacturing method of a semiconductor device as described above, for example, after the above-mentioned expansion step is performed, the dicing tape may loosen around the plurality of semiconductor wafers that have been cut, and adjacent semiconductor wafers with temporarily widened intervals come into contact with each other. In view of this, a die bonding film is known which has a specific length relative to the length of the die tape before being heated at high temperature in order to suppress the relaxation of the die tape as described above and prevent contact between adjacent semiconductor wafers. The length of the diced ribbon after heating (for example, Patent Document 1).

詳細而言，於專利文獻1記載之切晶黏晶膜中，相對於以100℃加熱1分鐘前之切晶帶之MD方向之第1長度100%，上述加熱後之上述MD方向之第2長度為95%以下。Specifically, in the die-cut die-bonding film described in Patent Document 1, with respect to 100% of the first length in the MD direction of the die-cut tape before heating at 100° C. for 1 minute, the second length in the MD direction after the above heating is The length is less than 95%.

根據專利文獻1記載之切晶黏晶膜，能夠抑制因拉伸切晶帶而切晶帶於被割斷之複數個半導體晶片之周圍發生鬆弛。藉此，能夠使相鄰之半導體晶片間之相隔距離(切口)充分隔開，而能夠防止半導體晶片彼此之接觸。 [先前技術文獻] [專利文獻] According to the die bonding film described in Patent Document 1, it is possible to prevent the die tape from relaxing around the plurality of cut semiconductor wafers due to stretching of the die tape. Thereby, the distance (notch) between adjacent semiconductor wafers can be sufficiently separated, and the semiconductor wafers can be prevented from contacting each other. [Prior technical literature] [Patent Document]

[專利文獻1]日本專利特開2016-115775號公報[Patent Document 1] Japanese Patent Application Laid-Open No. 2016-115775

[發明所欲解決之問題][Problem to be solved by the invention]

然而，對於不僅能夠使相鄰之半導體晶片間之相隔距離(切口)充分隔開，而且能夠抑制上述相隔距離(切口)因部位而不均一之切晶黏晶膜，尚不能說進行了充分研究。However, it cannot be said that sufficient research has been conducted on a die-cut die-bonding film that can not only fully separate the distance (notch) between adjacent semiconductor wafers but also suppress the unevenness of the distance (notch) depending on the location. .

因此，本發明之課題在於，提供一種能夠於擴展步驟後使半導體晶片間之切口充分隔開、及能夠抑制切口因部位而不均一之切晶黏晶膜。 [解決問題之技術手段] Therefore, an object of the present invention is to provide a die bonding film that can sufficiently separate the incisions between semiconductor wafers after the expansion step and can suppress non-uniformity of the incisions depending on the location. [Technical means to solve problems]

為了解決上述課題，本發明之切晶黏晶膜之特徵在於，具備：具有基材層及重疊於該基材層之黏著劑層之切晶帶、及重疊於該切晶帶之黏晶片， 上述切晶帶於120℃下之彈性模數為0.10 MPa以上， 上述切晶帶於120℃下之熱收縮率為6%以上。 In order to solve the above-mentioned problems, the die-cut die-bonding film of the present invention is characterized in that it includes: a die-cutting belt having a base material layer and an adhesive layer overlapping the base material layer; and a die-bonding wafer overlapping the die-cutting belt, The elastic modulus of the above-mentioned crystal-cut ribbon at 120°C is above 0.10 MPa. The thermal shrinkage rate of the above-mentioned cutting ribbon at 120°C is more than 6%.

以下，針對本發明之切晶黏晶膜之一個實施方式，一邊參照圖式一邊進行說明。Hereinafter, one embodiment of the die-cut die-bonding film of the present invention will be described with reference to the drawings.

本實施方式之切晶黏晶膜1如圖1所示，具備切晶帶20、及積層於該切晶帶20之黏著劑層22(後述)且要接著於半導體晶圓之黏晶片10。 再者，圖式中之圖為模式圖，不一定與實物中之縱橫長度比相同。 As shown in FIG. 1 , the die-bonding film 1 of this embodiment includes a die-bonding tape 20 and an adhesive layer 22 (described later) laminated on the die-cutting tape 20 and adhered to the die-bonding die 10 of the semiconductor wafer. Furthermore, the images in the diagrams are model images and may not necessarily have the same aspect ratio as the actual object.

本實施方式之切晶黏晶膜1於使用時，藉由照射活性能量射線(例如紫外線)而使黏著劑層22硬化。詳細而言，在於一個面接著有半導體晶圓之黏晶片10與貼合於該黏晶片10之另一面之黏著劑層22積層的狀態下，至少對黏著劑層22照射紫外線等。例如，自配置有基材層21之一側照射紫外線等，經過基材層21之紫外線等到達黏著劑層22。藉由照射紫外線等，黏著劑層22發生硬化。 由於黏著劑層22於照射後發生硬化，故而能夠降低黏著劑層22之黏著力，因此於照射後能夠較容易地自黏著劑層22將黏晶片10(接著有半導體晶片之狀態)剝離。於半導體裝置之製造中，黏晶片10接著於電路基板或半導體晶片等被接著體。 When the die-cut die-bonding film 1 of this embodiment is used, the adhesive layer 22 is hardened by irradiating active energy rays (such as ultraviolet rays). Specifically, in a state where the die bonding wafer 10 with the semiconductor wafer attached to one surface and the adhesive layer 22 bonded to the other surface of the die bonding wafer 10 are laminated, at least the adhesive layer 22 is irradiated with ultraviolet rays or the like. For example, ultraviolet light or the like is irradiated from the side where the base material layer 21 is arranged, and the ultraviolet light or the like passes through the base material layer 21 and reaches the adhesive layer 22 . The adhesive layer 22 is hardened by irradiating ultraviolet rays or the like. Since the adhesive layer 22 hardens after irradiation, the adhesive force of the adhesive layer 22 can be reduced. Therefore, the adhesive chip 10 (with the semiconductor chip attached thereto) can be easily peeled off from the adhesive layer 22 after irradiation. In the manufacturing of semiconductor devices, the bonding chip 10 is bonded to a substrate such as a circuit substrate or a semiconductor chip.

＜切晶黏晶膜之切晶帶＞ 上述切晶帶20通常為長條片，並以捲繞之狀態保管至使用。本實施方式之切晶黏晶膜1貼於具有較要割斷處理之矽晶圓大一圈之內徑之圓環狀框上，進行切割來使用。 ＜Cutting tape for die-cutting adhesive film＞ The above-mentioned dicing tape 20 is usually a long piece, and is stored in a rolled state until use. The die-cutting die-bonding film 1 of this embodiment is affixed to an annular frame having an inner diameter larger than that of the silicon wafer to be cut, and then used for cutting.

上述切晶帶20具備基材層21及重疊於該基材層21之黏著劑層22。The above-mentioned dicing belt 20 includes a base material layer 21 and an adhesive layer 22 overlapped with the base material layer 21 .

切晶帶20於120℃下之彈性模數(拉伸彈性模數)為0.10 MPa以上。因此，能夠抑制相鄰之半導體晶片間之相隔距離(切口)因部位而不均一。關於能夠抑制上述相隔距離(切口)之不均一之理由，於後文詳細地說明。The elastic modulus (tensile elastic modulus) of the cut ribbon 20 at 120°C is 0.10 MPa or more. Therefore, it is possible to prevent the distance (notch) between adjacent semiconductor wafers from being uneven depending on the location. The reason why the above-described unevenness in the spacing distance (notch) can be suppressed will be described in detail later.

切晶帶20於120℃下之上述彈性模數較佳為0.20 MPa以上、更佳為0.30 MPa以上。藉由使上述彈性模數更大，能夠進一步抑制切口之不均一。上述彈性模數可以為0.70 MPa以下。藉由使上述彈性模數為0.70 MPa以下，切晶帶20能夠更有效地發生熱收縮。The elastic modulus of the cut ribbon 20 at 120° C. is preferably 0.20 MPa or more, more preferably 0.30 MPa or more. By making the above-mentioned elastic modulus larger, unevenness of the incision can be further suppressed. The above elastic modulus may be 0.70 MPa or less. By setting the elastic modulus to 0.70 MPa or less, the dicing tape 20 can be thermally shrunk more efficiently.

切晶帶20於120℃下之彈性模數例如可藉由進一步提高彈性模數較高之聚丙烯等樹脂於基材層21中之含有率來增大。另一方面，藉由進一步降低彈性模數較高之聚丙烯等樹脂於基材層21中之含有率，能夠減小上述彈性模數。The elastic modulus of the dicing tape 20 at 120° C. can be increased, for example, by further increasing the content of resin such as polypropylene with a relatively high elastic modulus in the base material layer 21 . On the other hand, by further reducing the content rate of resin such as polypropylene with a relatively high elastic modulus in the base material layer 21, the elastic modulus can be reduced.

上述彈性模數(拉伸彈性模數)於以下之測定條件下測定。 測定裝置：固體黏彈性測定裝置(例如測定裝置名「RSA-G2」、TAInstruments公司製造) 試樣尺寸：初始長度40 mm、寬度10 mm 升溫速度：10℃/min、 測定溫度：-40℃以上且150℃以下之溫度範圍內之120℃ 夾盤間距離：20 mm 頻率：1 Hz 應變：0.1% 將拉伸儲存模數E'之值作為上述拉伸彈性模數。 The above-mentioned elastic modulus (tensile elastic modulus) is measured under the following measurement conditions. Measuring device: Solid viscoelasticity measuring device (for example, measuring device name "RSA-G2", manufactured by TA Instruments Co., Ltd.) Sample size: initial length 40 mm, width 10 mm Heating rate: 10℃/min, Measuring temperature: 120℃ within the temperature range between -40℃ and below 150℃ Distance between chucks: 20 mm Frequency: 1 Hz Strain: 0.1% The value of the tensile storage modulus E' is taken as the above-mentioned tensile elastic modulus.

切晶帶20於120℃下之熱收縮率為6%以上。因此，能夠於擴展步驟後使半導體晶片間之切口充分隔開。關於能夠使半導體晶片間之切口充分隔開之理由，於後文詳細說明。The heat shrinkage rate of the cutting tape 20 at 120°C is more than 6%. Therefore, the slits between the semiconductor wafers can be sufficiently separated after the expansion step. The reason why the slits between the semiconductor wafers can be sufficiently separated will be described in detail later.

上述熱收縮率較佳為7%以上、更佳為12%以上、進而較佳為17%以上。藉由使上述熱收縮率更大，能夠使半導體晶片之間之切口更大。上述熱收縮率可以為70%以下，可以為60%以下，亦可以為25%以下。The thermal shrinkage rate is preferably 7% or more, more preferably 12% or more, and still more preferably 17% or more. By making the thermal shrinkage rate larger, the slits between the semiconductor wafers can be made larger. The thermal shrinkage rate may be 70% or less, 60% or less, or 25% or less.

切晶帶20於120℃下之熱收縮率可藉由提高熱收縮性較高之樹脂(例如乙烯-乙酸乙烯酯共聚樹脂等)於基材層21中之含有率、或提高基材層21中能夠包含之乙烯-乙酸乙烯酯共聚樹脂中之乙酸乙烯酯比率來增大。另一方面，可藉由降低熱收縮性較高之樹脂(例如乙烯-乙酸乙烯酯共聚樹脂等)於基材層21中之含有率等來減小上述熱收縮率。The thermal shrinkage rate of the dicing belt 20 at 120°C can be achieved by increasing the content of resins with higher thermal shrinkage (such as ethylene-vinyl acetate copolymer resin, etc.) in the base material layer 21, or by increasing the content of the base material layer 21. The ratio of vinyl acetate in the ethylene-vinyl acetate copolymer resin that can be included in the resin is increased. On the other hand, the thermal shrinkage rate can be reduced by reducing the content of a resin with high thermal shrinkage (such as ethylene-vinyl acetate copolymer resin, etc.) in the base material layer 21 .

上述熱收縮率於以下之測定條件下測定。詳細而言，將切晶帶20切成寬度30 mm、長度120 mm之長條狀。於沿長度方向之10 mm/100 mm/10 mm之各位置處沿寬度方向劃標線。用夾具夾持所切割之試驗片之長度方向之一端部中較標線更靠端部之側。於設為120℃之熱風乾燥烘箱中，將切晶帶20與夾具一同吊起，於不對切晶帶20施加自重以外之負載之狀態下加熱1分鐘。加熱後，測定試驗片之標線間之距離。將相對於加熱前之標線間距離(100 mm)之收縮量(100 mm－加熱後之標線間距離)用百分率表示，藉此求出熱收縮率。The above-mentioned thermal shrinkage rate is measured under the following measurement conditions. Specifically, the dicing tape 20 is cut into a long strip with a width of 30 mm and a length of 120 mm. Mark lines along the width direction at each position of 10 mm/100 mm/10 mm along the length direction. Use a clamp to hold one of the ends of the cut test piece in the length direction closer to the end than the marked line. In a hot air drying oven set at 120° C., the dicing belt 20 and the clamp were lifted together, and the dicing belt 20 was heated for 1 minute without applying a load other than its own weight. After heating, measure the distance between the marking lines of the test piece. The thermal shrinkage rate is calculated by expressing the amount of shrinkage (100 mm - the distance between the marking lines after heating) as a percentage relative to the distance between the marking lines before heating (100 mm).

[切晶帶之基材層] 本實施方式中，重疊於黏著劑層22之基材層21可以為單層結構，亦可以為積層結構(例如3層結構)。 [Substrate layer of cutting tape] In this embodiment, the base material layer 21 overlapping the adhesive layer 22 may have a single-layer structure or a stacked structure (for example, a three-layer structure).

基材層21之各層例如為金屬箔、紙、布等纖維片、橡膠片、樹脂膜等。 作為構成基材層21之纖維片，可例舉紙、織布、不織布等。 作為樹脂膜之材質，例如可例舉：低密度聚乙烯(LDPE)、高密度聚乙烯(HDPE)、聚丙烯(PP)、乙烯-丙烯共聚物等聚烯烴；乙烯-乙酸乙烯酯共聚物(EVA)、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物等乙烯之共聚物；聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)、聚對苯二甲酸丁二酯(PBT)等聚酯；聚丙烯酸酯；聚氯乙烯(PVC)；聚胺基甲酸酯；聚碳酸酯；聚苯硫醚(PPS)；脂肪族聚醯胺、全芳香族聚醯胺(aramid)等聚醯胺；聚醚醚酮(PEEK)；聚醯亞胺；聚醚醯亞胺；聚偏二氯乙烯；ABS(丙烯腈-丁二烯-苯乙烯共聚物)；纖維素或纖維素衍生物；含聚矽氧之高分子；含氟高分子等。其等可單獨使用1種或組合使用2種以上。 Each layer of the base material layer 21 is, for example, a fiber sheet such as metal foil, paper, or cloth, a rubber sheet, or a resin film. Examples of the fiber sheet constituting the base material layer 21 include paper, woven fabric, non-woven fabric, and the like. Examples of the material of the resin film include polyolefins such as low-density polyethylene (LDPE), high-density polyethylene (HDPE), polypropylene (PP), and ethylene-propylene copolymer; ethylene-vinyl acetate copolymer ( EVA), ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymer and other ethylene copolymers; polyethylene terephthalate (PET) ), polyethylene naphthalate (PEN), polybutylene terephthalate (PBT) and other polyesters; polyacrylate; polyvinyl chloride (PVC); polyurethane; polycarbonate; Polyphenylene sulfide (PPS); aliphatic polyamide, fully aromatic polyamide (aramid) and other polyamides; polyetheretherketone (PEEK); polyimide; polyetherimide; polypyridine Vinyl chloride; ABS (acrylonitrile-butadiene-styrene copolymer); cellulose or cellulose derivatives; polysiloxane-containing polymers; fluorine-containing polymers, etc. These can be used individually by 1 type or in combination of 2 or more types.

基材層21較佳為包含高分子材料，更佳為包含乙烯-乙酸乙烯酯共聚樹脂及聚丙烯樹脂。基材層21之各層較佳為由乙烯-乙酸乙烯酯共聚樹脂或聚丙烯樹脂等之樹脂膜等構成。藉此，能夠更充分地兼具較高之熱收縮性及較高之彈性模數。 再者，基材層21具有樹脂膜時，亦可對樹脂膜實施拉伸處理等而控制伸長率等變形性。 The base material layer 21 preferably contains a polymer material, and more preferably contains ethylene-vinyl acetate copolymer resin and polypropylene resin. Each layer of the base material layer 21 is preferably composed of a resin film such as ethylene-vinyl acetate copolymer resin or polypropylene resin. Thereby, it is possible to more fully achieve both high thermal shrinkage and high elastic modulus. Furthermore, when the base material layer 21 has a resin film, the resin film may be subjected to a stretching process or the like to control deformability such as elongation.

對於基材層21之表面，亦可實施表面處理，以提高與黏著劑層22之密接性。作為表面處理，例如亦可採用鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、離子化放射線處理等基於化學方法或物理方法之氧化處理等。又，亦可實施利用增黏塗佈劑、底塗劑、接著劑等塗佈劑進行之塗佈處理。The surface of the base material layer 21 may also be subjected to surface treatment to improve the adhesion with the adhesive layer 22 . As surface treatment, for example, oxidation treatment based on chemical methods or physical methods such as chromic acid treatment, ozone exposure, flame exposure, high-voltage electric shock exposure, ionizing radiation treatment, etc. can also be used. In addition, coating treatment using coating agents such as thickening coating agents, primers, and adhesives can also be performed.

基材層21較佳為由複數個層構成，更佳為由至少3層構成，進而較佳為由3層構成。 藉由使基材層21具有複數個層之積層結構(例如3層結構)，能夠將彈性模數更高之層與彈性模數更低之層進行積層，因此能夠較簡便地控制基材層21之彈性模數。例如，僅由1層構成之基材層21之彈性模數較高時，於擴展步驟中，可能變得略容易產生半導體晶片之***、基材層21之破裂。又，例如，用於割斷半導體晶片之應力於擴展步驟中自拉伸切晶帶20之力經過基材層21及黏著劑層22而傳遞時，僅由1層構成之基材層21之彈性模數較低時，上述應力可能變得略難以傳遞。 又，藉由使基材層21具有複數個層之積層結構(例如3層結構)，根據與上述理由同樣之理由，能夠較簡便地控制基材層21之熱收縮率。 如此，藉由使基材層21由複數個層構成，能夠引出各層之物性(特性)。因此，由多層構成之基材層與單層之基材層相比，容易發揮期望之特性。 The base material layer 21 is preferably composed of a plurality of layers, more preferably at least three layers, and still more preferably three layers. By providing the base material layer 21 with a lamination structure of a plurality of layers (for example, a three-layer structure), a layer with a higher elastic modulus and a layer with a lower elastic modulus can be laminated, so that the base material layer can be controlled more easily. Elastic modulus of 21. For example, when the elastic modulus of the base material layer 21 consisting of only one layer is high, it may become slightly easier to bulge the semiconductor chip and crack the base material layer 21 during the expansion step. Also, for example, when the stress for cutting the semiconductor wafer is transmitted through the base material layer 21 and the adhesive layer 22 from the force of the self-stretching dicing tape 20 in the expansion step, the elasticity of the base material layer 21 composed of only one layer At lower modulus, the above stresses may become slightly more difficult to transmit. Furthermore, by providing the base material layer 21 with a laminated structure of a plurality of layers (for example, a three-layer structure), the thermal shrinkage rate of the base material layer 21 can be controlled relatively easily for the same reason as above. In this way, by forming the base material layer 21 from a plurality of layers, the physical properties (characteristics) of each layer can be extracted. Therefore, a base material layer composed of multiple layers can more easily exhibit desired characteristics than a single-layer base material layer.

基材層21例如如圖2所示，由第1基材層21a、第2基材層21b及第3基材層21c堆疊而成之3層構成。3層結構之基材層21中，較佳為分別配置於一表面側及另一表面側之第1基材層21a及第3基材層21c均包含聚丙烯樹脂，且配置於第1基材層21a和第3基材層21c之間之第2基材層21b包含乙烯-乙酸乙烯酯共聚樹脂。藉此，基材層21能夠發揮於高溫下彈性模數較高之聚丙烯樹脂之特性，除此以外，基材層21還能夠發揮於高溫下熱收縮率較高之乙烯-乙酸乙烯酯共聚樹脂之特性。因此，能夠更充分地實現於擴展步驟後使半導體晶片間之切口充分隔開及抑制切口因部位而不均一這兩者。再者，於基材層21中，例如，與黏著劑層22重疊之層為第1基材層21a，距離黏著劑層22最遠之層為第3基材層21c。第2基材層21b配置於第1基材層21a與第3基材層21c之間。The base material layer 21 is composed of three stacked layers including a first base material layer 21a, a second base material layer 21b, and a third base material layer 21c, as shown in FIG. 2, for example. In the base material layer 21 of the three-layer structure, it is preferable that the first base material layer 21a and the third base material layer 21c respectively disposed on one surface side and the other surface side both contain polypropylene resin, and are disposed on the first base material layer 21. The second base material layer 21b between the material layer 21a and the third base material layer 21c contains ethylene-vinyl acetate copolymer resin. Thereby, the base material layer 21 can exert the characteristics of polypropylene resin with high elastic modulus at high temperature. In addition, the base material layer 21 can also exert the characteristics of ethylene-vinyl acetate copolymer with high thermal shrinkage at high temperature. Characteristics of Resin. Therefore, it is possible to more fully achieve both of fully spacing the incisions between the semiconductor wafers after the expansion step and suppressing non-uniformity of the incisions depending on the location. Furthermore, in the base material layer 21, for example, the layer overlapping the adhesive layer 22 is the first base material layer 21a, and the layer farthest from the adhesive layer 22 is the third base material layer 21c. The second base material layer 21b is arranged between the first base material layer 21a and the third base material layer 21c.

3層結構之基材層21較佳為具有分別包含非彈性體材料之第1基材層21a及第3基材層21c、以及配置於該等層之間且包含彈性體材料之第2基材層21b。 彈性體材料係室溫下之彈性模數為200 MPa以下之高分子材料。彈性體材料係通常於室溫(23℃)下表現出橡膠彈性之高分子材料。另一方面，非彈性體材料係室溫下之彈性模數大於200 MPa之高分子材料。 關於具有此種3層之積層結構之基材層21，例如藉由共擠出成形製作各層且將3個層一體化而形成。 The base material layer 21 of the three-layer structure preferably has a first base material layer 21a and a third base material layer 21c each containing a non-elastomeric material, and a second base material layer 21a and a third base material layer 21c disposed between these layers and containing an elastomeric material. Material layer 21b. Elastomer materials are polymer materials with an elastic modulus below 200 MPa at room temperature. Elastomer materials are polymer materials that usually exhibit rubber elasticity at room temperature (23°C). On the other hand, non-elastomeric materials are polymer materials with an elastic modulus greater than 200 MPa at room temperature. The base material layer 21 having such a three-layer laminated structure is formed by, for example, coextruding each layer and integrating the three layers.

於3層結構之基材層21中，內層之厚度相對於外層之總厚度之比(第2基材層21b之厚度/第1基材層21a及第3基材層21c之總厚度)較佳為1以上且10以下。又，第1基材層21a及第3基材層21c之厚度可大致相同，例如第1基材層21a之厚度相對於第3基材層21c之厚度之比可以為0.9以上且1.1以下。In the base material layer 21 of the three-layer structure, the ratio of the thickness of the inner layer to the total thickness of the outer layer (thickness of the second base material layer 21b/total thickness of the first base material layer 21a and the third base material layer 21c) Preferably it is 1 or more and 10 or less. In addition, the thickness of the first base material layer 21a and the third base material layer 21c may be substantially the same. For example, the ratio of the thickness of the first base material layer 21a to the thickness of the third base material layer 21c may be 0.9 or more and 1.1 or less.

上述非彈性體材料較佳為至少包含低密度聚乙烯(LDPE)、高密度聚乙烯(HDPE)、聚丙烯等聚烯烴。聚丙烯亦可為利用茂金屬觸媒合成之茂金屬聚丙烯。The above-mentioned non-elastomeric material preferably contains at least polyolefins such as low-density polyethylene (LDPE), high-density polyethylene (HDPE), and polypropylene. The polypropylene can also be metallocene polypropylene synthesized using a metallocene catalyst.

另一方面，彈性體材料較佳為至少包含乙烯-乙酸乙烯酯共聚物(EVA)。乙烯-乙酸乙烯酯共聚樹脂(EVA)亦可包含5質量%以上且35質量%以下之乙酸乙烯酯之結構單元。On the other hand, the elastomeric material preferably contains at least ethylene-vinyl acetate copolymer (EVA). The ethylene-vinyl acetate copolymer resin (EVA) may contain 5% by mass or more and 35% by mass or less of vinyl acetate structural units.

基材層21之厚度(總厚度)較佳為80 μm以上且150 μm以下。該值為隨機選擇之至少3個部位之測定值的平均值。以下，黏著劑層22之厚度亦為以相同方式測得之平均值。藉由使基材層21之厚度為80 μm以上，能夠對基材層21之整體更均勻地施加應力，於擴展步驟中能夠將半導體晶圓更良好地割斷。The thickness (total thickness) of the base material layer 21 is preferably 80 μm or more and 150 μm or less. This value is the average of the measured values of at least 3 randomly selected locations. Hereinafter, the thickness of the adhesive layer 22 is also an average value measured in the same manner. By setting the thickness of the base material layer 21 to 80 μm or more, stress can be applied more uniformly to the entire base material layer 21, and the semiconductor wafer can be better cut during the expansion step.

更佳為第1基材層21a及第3基材層21c各自獨立地具有1 μm以上且15 μm以下之厚度，第2基材層21b具有70 μm以上且120 μm以下之厚度。藉此，有基材層21更好地反映出基材層21中各層之物性(特性)之優點。More preferably, the first base material layer 21a and the third base material layer 21c each independently have a thickness of 1 μm or more and 15 μm or less, and the second base material layer 21b has a thickness of 70 μm or more and 120 μm or less. Thereby, the base material layer 21 can better reflect the advantages of the physical properties (characteristics) of each layer in the base material layer 21 .

上述基材層21中，較佳為第1基材層21a及第3基材層21c中之至少一者進而包含抗靜電劑。藉此，能夠防止基材層21帶靜電。因此，可以充分防止半導體晶片中之電子電路因靜電放電而受到靜電破壞。又，藉由防止靜電，能夠充分防止灰塵等異物附著於基材層21。In the above-mentioned base material layer 21, it is preferable that at least one of the first base material layer 21a and the third base material layer 21c further contains an antistatic agent. This can prevent the base material layer 21 from being statically charged. Therefore, the electronic circuit in the semiconductor chip can be fully prevented from being damaged by electrostatic discharge due to electrostatic discharge. In addition, by preventing static electricity, foreign matter such as dust can be sufficiently prevented from adhering to the base material layer 21 .

抗靜電劑係藉由調配於構成基材層之各層中而使各層之抗靜電性能較調配前提高之化合物。作為抗靜電劑，例如可例舉界面活性劑等低分子型抗靜電劑、碳黑等導電性顆粒、高分子型抗靜電劑等。作為抗靜電劑，較佳為高分子型抗靜電劑。高分子型抗靜電劑具有如下特性：於分子內具有成為電荷之通道之導電性單元，不易受到濕度之影響，而不易自構成基材層之各層中滲出。例如，將高分子型抗靜電劑混練至樹脂中而成形樹脂膜，且使第1基材層21a或第3基材層21c採用該樹脂膜，藉此，基材層能夠具有經時穩定之抗靜電性能。The antistatic agent is a compound that is blended into each layer constituting the base material layer to improve the antistatic performance of each layer compared to before blending. Examples of the antistatic agent include low molecular weight antistatic agents such as surfactants, conductive particles such as carbon black, and polymeric antistatic agents. As the antistatic agent, a polymer antistatic agent is preferred. Polymer antistatic agents have the following characteristics: they have conductive units that serve as channels for charges in the molecules, are not easily affected by humidity, and are not easily infiltrated from the layers constituting the base material layer. For example, a polymer-type antistatic agent is kneaded into resin to form a resin film, and the first base material layer 21a or the third base material layer 21c is made of the resin film. This allows the base material layer to have stable properties over time. Antistatic properties.

抗靜電劑較佳為選自由聚烯烴-聚乙二醇共聚物、聚烯烴-聚醯胺共聚物、聚乙二醇-聚醯胺共聚物、聚乙二醇-(甲基)丙烯酸酯共聚物、聚乙二醇-表氯醇共聚物、離子聚合物、及聚合物與離子性化合物(例如鋰鹽等金屬鹽)之混合物所組成之群中之至少1種。The antistatic agent is preferably selected from the group consisting of polyolefin-polyethylene glycol copolymer, polyolefin-polyamide copolymer, polyethylene glycol-polyamide copolymer, and polyethylene glycol-(meth)acrylate copolymer. At least one of the group consisting of polymers, polyethylene glycol-epichlorohydrin copolymers, ionic polymers, and mixtures of polymers and ionic compounds (such as metal salts such as lithium salts).

對於基材層21之背面側(未重疊黏著劑層22之一側)，例如亦可利用聚矽氧系樹脂、氟系樹脂等脫模劑(剝離劑)等實施脫模處理，以賦予剝離性。 就能夠自背面側對黏著劑層22提供紫外線等活性能量射線之方面而言，基材層21較佳為透光性(紫外線透過性)之樹脂膜等。 The back side of the base layer 21 (the side where the adhesive layer 22 is not overlapped) may be subjected to a release treatment using a release agent (release agent) such as a silicone resin or a fluorine resin to impart peeling. sex. In order to be able to provide active energy rays such as ultraviolet rays to the adhesive layer 22 from the back side, the base material layer 21 is preferably a translucent (ultraviolet ray transmissive) resin film or the like.

構成基材層21之複數個層之面中距離黏著劑層22最遠之面之表面電阻率較佳為1.00×10 ⁹[Ω/sq.]以上且1.00×10 ¹²[Ω/sq.]以下。例如於圖2中，較佳為第3基材層21c之露出面之表面電阻率為上述數值範圍內。藉此，能夠使電荷更充分地逃逸至基材層21之外，因此能夠更充分地防止基材層21之靜電。 The surface resistivity of the surface farthest from the adhesive layer 22 among the plurality of layers constituting the base material layer 21 is preferably 1.00×10 ⁹ [Ω/sq.] or more and 1.00×10 ¹² [Ω/sq.] the following. For example, in FIG. 2 , it is preferable that the surface resistivity of the exposed surface of the third base material layer 21 c is within the above numerical range. Thereby, electric charges can escape more fully to the outside of the base material layer 21 , and therefore static electricity in the base material layer 21 can be more fully prevented.

上述表面電阻率可藉由增加具有要測定表面電阻率之面之層中所含之抗靜電劑的調配量、或採用進一步提高表面電阻率之抗靜電劑來增大。另一方面，藉由減少抗靜電劑之調配量、採用進一步降低表面電阻率之抗靜電劑等，能夠減小上述表面電阻率。再者，可採用市售品作為具有期望之表面電阻率之基材層21。The above-mentioned surface resistivity can be increased by increasing the amount of the antistatic agent contained in the layer having the surface to be measured, or by using an antistatic agent that further increases the surface resistivity. On the other hand, the above-mentioned surface resistivity can be reduced by reducing the compounding amount of the antistatic agent, using an antistatic agent that further reduces the surface resistivity, etc. Furthermore, a commercially available product may be used as the base material layer 21 having a desired surface resistivity.

上述表面電阻率於以下之測定條件下進行測定。詳細而言，使用高電阻率計(例如「HirestaUP」、三菱化學公司製造)，於23℃±2℃、50%RH±5%之條件下將切晶帶20靜置2小時。然後，於上述條件下測定切晶帶中之基材層21之背面側(未重疊黏著劑層22之一側)之面的表面電阻率。測定條件為施加電壓500 V、1分鐘。The above-mentioned surface resistivity was measured under the following measurement conditions. Specifically, using a high resistivity meter (for example, "HirestaUP", manufactured by Mitsubishi Chemical Corporation), the dicing tape 20 is left to stand for 2 hours under the conditions of 23°C ± 2°C and 50% RH ± 5%. Then, the surface resistivity of the back side (the side where the adhesive layer 22 is not overlapped) of the base material layer 21 in the dicing tape was measured under the above conditions. The measurement conditions were an applied voltage of 500 V and 1 minute.

[切晶帶之黏著劑層] 本實施方式中，黏著劑層22例如包含丙烯酸系共聚物、異氰酸酯化合物及聚合起始劑。 黏著劑層22亦可具有5 μm以上且40 μm以下之厚度。黏著劑層22之形狀及大小通常與基材層21之形狀及大小相同。 [Adhesive layer of cutting tape] In this embodiment, the adhesive layer 22 includes, for example, an acrylic copolymer, an isocyanate compound, and a polymerization initiator. The adhesive layer 22 may also have a thickness of 5 μm or more and 40 μm or less. The shape and size of the adhesive layer 22 are generally the same as the shape and size of the base material layer 21 .

本實施方式中，黏著劑層22包含於分子中至少具有(甲基)丙烯酸烷基酯單元及含交聯性基之(甲基)丙烯酸酯單元作為單體單元之丙烯酸系共聚物。 丙烯酸系共聚物中，含交聯性基之(甲基)丙烯酸酯單元中之一部分具有自由基聚合性碳-碳雙鍵。丙烯酸系共聚物相對於(甲基)丙烯酸烷基酯單元100莫耳份含有15莫耳份以上且60莫耳份以下之含交聯性基之(甲基)丙烯酸酯單元，含交聯性基之(甲基)丙烯酸酯單元中之50莫耳%以上且95莫耳%以下含有自由基聚合性碳-碳雙鍵。 再者，本說明書中，「(甲基)丙烯酸酯」之表述表示甲基丙烯酸酯(methacrylic acid ester)及丙烯酸酯(acrylic acid ester)中之至少一者。「(甲基)丙烯酸」之用語亦同樣如此。 In this embodiment, the adhesive layer 22 includes an acrylic copolymer having at least an alkyl (meth)acrylate unit and a crosslinkable group-containing (meth)acrylate unit as monomer units in the molecule. In the acrylic copolymer, a part of the crosslinkable group-containing (meth)acrylate units has a radically polymerizable carbon-carbon double bond. An acrylic copolymer contains 15 or more and 60 mole parts of (meth)acrylate units containing a crosslinkable group per 100 mole parts of (meth)acrylic acid alkyl ester units, and contains crosslinkability More than 50 mol% and less than 95 mol% of the (meth)acrylate units of the base contain radically polymerizable carbon-carbon double bonds. Furthermore, in this specification, the expression "(meth)acrylate" means at least one of methacrylic acid ester and acrylic acid ester. The same applies to the term "(meth)acrylic acid".

上述丙烯酸系共聚物於分子中至少具有(甲基)丙烯酸烷基酯單元及含交聯性基之(甲基)丙烯酸酯單元作為單體單元。單體單元係構成丙烯酸系共聚物之主鏈之單元。換言之，單體單元係來自用以使丙烯酸系共聚物聚合之單體的單元。上述丙烯酸系共聚物中之各側鏈包含於構成主鏈之各單體單元中。The acrylic copolymer has at least a (meth)acrylic acid alkyl ester unit and a crosslinkable group-containing (meth)acrylic acid ester unit as monomer units in the molecule. The monomer unit is a unit constituting the main chain of the acrylic copolymer. In other words, the monomer units are units derived from the monomer used to polymerize the acrylic copolymer. Each side chain in the acrylic copolymer is contained in each monomer unit constituting the main chain.

上述(甲基)丙烯酸烷基酯單元來自(甲基)丙烯酸烷基酯單體。換言之，(甲基)丙烯酸烷基酯單體進行聚合反應後之分子結構為(甲基)丙烯酸烷基酯單元。「烷基」 之表述表示與(甲基)丙烯酸進行了酯鍵結之烴部分。The above-mentioned (meth)acrylic acid alkyl ester unit is derived from a (meth)acrylic acid alkyl ester monomer. In other words, the molecular structure of the alkyl (meth)acrylate monomer after the polymerization reaction is an alkyl (meth)acrylate unit. The expression "alkyl" indicates a hydrocarbon moiety that is ester-bonded with (meth)acrylic acid.

(甲基)丙烯酸烷基酯單元中之烷基部分(烴)可以為飽和烴，亦可以為不飽和烴。 (甲基)丙烯酸烷基酯單元中之烷基部分(烴)可以為直鏈狀烴，亦可以為支鏈狀烴，還可以包含環狀結構。 (甲基)丙烯酸烷基酯單元中之烷基部分(烴)之碳數可以為8以上且22以下。 The alkyl part (hydrocarbon) in the alkyl (meth)acrylate unit may be a saturated hydrocarbon or an unsaturated hydrocarbon. The alkyl part (hydrocarbon) in the alkyl (meth)acrylate unit may be a linear hydrocarbon, a branched hydrocarbon, or may include a cyclic structure. The number of carbon atoms in the alkyl moiety (hydrocarbon) in the alkyl (meth)acrylate unit may be 8 or more and 22 or less.

上述丙烯酸系共聚物較佳為包含烷基部分之碳數為8以上之(甲基)丙烯酸長鏈烷基酯單元作為(甲基)丙烯酸烷基酯單元，更佳為包含烷基部分為飽和烴且為碳數8以上且22以下之烴的(甲基)丙烯酸長鏈飽和烷基酯單元。The above-mentioned acrylic copolymer preferably contains a (meth)acrylic acid long-chain alkyl ester unit with a carbon number of 8 or more in the alkyl moiety as a (meth)acrylic acid alkyl ester unit, and more preferably contains a saturated alkyl moiety. It is a long-chain saturated alkyl (meth)acrylate unit of a hydrocarbon having 8 to 22 carbon atoms.

上述丙烯酸系共聚物較佳為於分子中之全部單體單元中碳數8以上之(甲基)丙烯酸長鏈烷基酯單元所占之比率(莫耳換算)最高，更佳為碳數9以上之(甲基)丙烯酸長鏈烷基酯單元所占之比率(莫耳換算)最高。例如，全部單體單元中之(甲基)丙烯酸長鏈烷基酯單元以莫耳換算計亦可占50%以上且80以下%。The above-mentioned acrylic copolymer preferably has the highest ratio (in molar conversion) of (meth)acrylic acid long-chain alkyl ester units with a carbon number of 8 or more among all monomer units in the molecule, and more preferably has a carbon number of 9. The ratio of the above long-chain alkyl (meth)acrylate units (in molar conversion) is the highest. For example, the long-chain alkyl (meth)acrylate units in all monomer units may account for more than 50% and less than 80% in molar terms.

(甲基)丙烯酸長鏈飽和烷基酯單元較佳為分子中不含苯環以及醚鍵(-CH ₂-O-CH ₂-)、-OH基及-COOH基等極性基之任何一者。(甲基)丙烯酸長鏈飽和烷基酯單元中，烷基部分亦可為不含C及H以外之原子且由8～12之碳原子構成之飽和直鏈狀烴或飽和支鏈狀烴。 The long-chain saturated alkyl (meth)acrylate unit preferably does not contain any of the benzene ring and polar groups such as ether bonds (-CH ₂ -O-CH ₂ -), -OH groups and -COOH groups in the molecule. . In the (meth)acrylic acid long-chain saturated alkyl ester unit, the alkyl part may also be a saturated straight-chain hydrocarbon or a saturated branched-chain hydrocarbon that does not contain atoms other than C and H and consists of 8 to 12 carbon atoms.

上述丙烯酸系共聚物較佳為包含烷基部分之碳數為8以上且10以下之(甲基)丙烯酸飽和支鏈狀烷基酯單元、及烷基部分之碳數為12以上且14以下之(甲基)丙烯酸飽和直鏈狀烷基酯單元作為上述(甲基)丙烯酸烷基酯單元。The acrylic copolymer preferably contains a (meth)acrylic acid saturated branched alkyl ester unit having a carbon number of 8 or more and 10 or less in the alkyl part, and an alkyl part having a carbon number of 12 or more and 14 or less. A (meth)acrylic acid saturated linear alkyl ester unit serves as the (meth)acrylic acid alkyl ester unit.

上述(甲基)丙烯酸飽和支鏈狀烷基酯單元之烷基部分(烴部分)之結構為飽和支鏈狀烷基結構即可，可以為iso結構、sec結構、neo結構或tert結構。 具體而言，作為(甲基)丙烯酸飽和支鏈狀烷基酯單元，可例舉(甲基)丙烯酸異庚酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異硬脂酯之各單元等。其中，較佳為(甲基)丙烯酸異壬酯單元及(甲基)丙烯酸2-乙基己酯單元中之至少一者。 The structure of the alkyl part (hydrocarbon part) of the above-mentioned (meth)acrylic acid saturated branched alkyl ester unit only needs to be a saturated branched alkyl structure, which may be an iso structure, a sec structure, a neo structure or a tert structure. Specifically, examples of the saturated branched alkyl (meth)acrylate unit include isoheptyl (meth)acrylate, isooctyl (meth)acrylate, isononyl (meth)acrylate, (meth)acrylate Each unit of isodecyl methacrylate, 2-ethylhexyl (meth)acrylate, isostearyl (meth)acrylate, etc. Among them, at least one of the isononyl (meth)acrylate unit and the 2-ethylhexyl (meth)acrylate unit is preferred.

上述(甲基)丙烯酸飽和直鏈狀烷基酯單元之烷基部分(烴部分)之結構為飽和直鏈狀烷基結構即可。 具體而言，作為(甲基)丙烯酸飽和支鏈狀烷基酯單元，可例舉(甲基)丙烯酸正辛酯、(甲基)丙烯酸正壬酯、(甲基)丙烯酸正癸酯 、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸肉豆蔻酯、(甲基)丙烯酸棕櫚酯、(甲基)丙烯酸硬脂酯、(甲基)丙烯酸山崳酯等各單元。 The structure of the alkyl part (hydrocarbon part) of the above-mentioned (meth)acrylic acid saturated linear alkyl ester unit only needs to be a saturated linear alkyl structure. Specifically, examples of the saturated branched alkyl (meth)acrylate unit include n-octyl (meth)acrylate, n-nonyl (meth)acrylate, n-decyl (meth)acrylate , (meth)acrylate Tridecyl methacrylate, lauryl (meth)acrylate, myristyl (meth)acrylate, palmityl (meth)acrylate, stearyl (meth)acrylate, benzene (meth)acrylate Ester and other units.

上述丙烯酸系共聚物中，作為上述(甲基)丙烯酸烷基酯單元，可單獨包含1種或包含2種以上。In the above-mentioned acrylic copolymer, as the above-mentioned (meth)acrylic acid alkyl ester unit, one type may be contained alone or two or more types may be contained.

上述丙烯酸系共聚物較佳為包含選自由(甲基)丙烯酸2-乙基己酯單元、(甲基)丙烯酸異壬酯單元及(甲基)丙烯酸月桂酯單元所組成之群中之至少1種作為(甲基)丙烯酸烷基酯單元。The acrylic copolymer preferably contains at least one selected from the group consisting of a 2-ethylhexyl (meth)acrylate unit, an isononyl (meth)acrylate unit, and a lauryl (meth)acrylate unit. species as (meth)acrylic acid alkyl ester units.

含交聯性基之(甲基)丙烯酸酯單元具有能夠藉由胺基甲酸酯化反應而形成胺基甲酸酯鍵之羥基、或能夠藉由自由基反應而聚合之聚合性基。更詳細而言，含交聯性基之(甲基)丙烯酸酯單元具有未反應之羥基或作為聚合性基之自由基聚合性碳-碳雙鍵中之至少任一者。例如，含交聯性基之(甲基)丙烯酸酯單元之一部分具有未反應之羥基，另一部分(其他全部)不具有羥基且具有自由基聚合性碳-碳雙鍵。The crosslinkable group-containing (meth)acrylate unit has a hydroxyl group capable of forming a urethane bond by a urethanation reaction, or a polymerizable group capable of polymerization by a radical reaction. More specifically, the crosslinkable group-containing (meth)acrylate unit has at least one of an unreacted hydroxyl group or a radically polymerizable carbon-carbon double bond as a polymerizable group. For example, one part of the cross-linkable group-containing (meth)acrylate unit has an unreacted hydroxyl group, and the other part (all others) does not have a hydroxyl group and has a radically polymerizable carbon-carbon double bond.

上述丙烯酸系共聚物具有於碳數4以下之烷基部分上鍵結有羥基之含羥基之(甲基)丙烯酸酯單元作為含交聯性基之(甲基)丙烯酸酯單元。當黏著劑層22包含異氰酸酯化合物時，異氰酸酯化合物之異氰酸基與含羥基之(甲基)丙烯酸酯單元之羥基能夠容易地反應。 藉由預先使具有含羥基之(甲基)丙烯酸酯單元之丙烯酸系共聚物與異氰酸酯化合物共存於黏著劑層22中，能夠使黏著劑層22適度地硬化。因此，丙烯酸聚合物能夠充分凝膠化。藉此，黏著劑層22能夠維持形狀並且發揮黏著性能。 The acrylic copolymer has a hydroxyl-containing (meth)acrylate unit in which a hydroxyl group is bonded to an alkyl moiety having 4 or less carbon atoms as a crosslinkable group-containing (meth)acrylate unit. When the adhesive layer 22 includes an isocyanate compound, the isocyanate group of the isocyanate compound and the hydroxyl group of the hydroxyl-containing (meth)acrylate unit can easily react. By allowing an acrylic copolymer having a hydroxyl-containing (meth)acrylate unit and an isocyanate compound to coexist in the adhesive layer 22 in advance, the adhesive layer 22 can be appropriately hardened. Therefore, the acrylic polymer is able to fully gel. Thereby, the adhesive layer 22 can maintain its shape and exert adhesive performance.

含羥基之(甲基)丙烯酸酯單元較佳為於碳數2以上且4以下之烷基部分上鍵結有OH基之含羥基之(甲基)丙烯酸C2～C4烷基酯單元。「C2～C4烷基」之表述表示與(甲基)丙烯酸進行了酯鍵結之烴部分的碳數。換言之，含羥基之(甲基)丙烯酸C2～C4烷基酯系單體表示(甲基)丙烯酸與碳數2以上且4以下之醇(通常為二元醇)進行酯鍵結而得到之單體。以下於本說明書中相同。 C2～C4烷基之烴部分通常為飽和烴。例如，C2～C4烷基之烴部分為直鏈狀飽和烴或支鏈狀飽和烴。C2～C4烷基之烴部分較佳為不包含含有氧(O)、氮(N)等之極性基。 The hydroxyl-containing (meth)acrylate unit is preferably a hydroxyl-containing C2-C4 alkyl (meth)acrylate unit in which an OH group is bonded to an alkyl moiety having 2 to 4 carbon atoms. The expression "C2-C4 alkyl" indicates the number of carbon atoms in the hydrocarbon moiety that is ester-bonded with (meth)acrylic acid. In other words, the hydroxyl-containing C2-C4 alkyl (meth)acrylate monomer represents a monomer obtained by ester bonding (meth)acrylic acid with an alcohol (usually a dihydric alcohol) having 2 to 4 carbon atoms. body. The following are the same as in this manual. The hydrocarbon part of the C2-C4 alkyl group is usually a saturated hydrocarbon. For example, the hydrocarbon part of the C2-C4 alkyl group is a linear saturated hydrocarbon or a branched saturated hydrocarbon. The hydrocarbon part of the C2-C4 alkyl group preferably does not contain polar groups containing oxygen (O), nitrogen (N), etc.

作為含羥基之(甲基)丙烯酸C2～C4烷基酯單元，例如可例舉(甲基)丙烯酸羥基乙酯、(甲基)丙烯酸羥基丙酯、或者(甲基)丙烯酸羥基正丁酯或(甲基)丙烯酸羥基異丁酯等(甲基)丙烯酸羥基丁酯之各單元。再者，羥基(-OH基)可以與烴部分之末端之碳(C)鍵結，亦可以與烴部分之末端以外之碳(C)鍵結。Examples of the hydroxyl-containing C2-C4 alkyl (meth)acrylate unit include hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate, or hydroxyn-butyl (meth)acrylate, or Each unit of hydroxybutyl (meth)acrylate such as hydroxyisobutyl (meth)acrylate. Furthermore, the hydroxyl group (-OH group) may be bonded to the carbon (C) at the end of the hydrocarbon part, or may be bonded to the carbon (C) other than the end of the hydrocarbon part.

上述丙烯酸系共聚物包含於側鏈中具有自由基聚合性碳-碳雙鍵(聚合性不飽和雙鍵)之聚合性(甲基)丙烯酸酯單元作為含交聯性基之(甲基)丙烯酸酯單元。The above-mentioned acrylic copolymer contains a polymerizable (meth)acrylate unit having a radically polymerizable carbon-carbon double bond (polymerizable unsaturated double bond) in the side chain as a crosslinkable group-containing (meth)acrylic acid ester unit.

聚合性(甲基)丙烯酸酯單元具體而言，具有上述含羥基之(甲基)丙烯酸酯單元中之羥基與含異氰酸基之(甲基)丙烯酸系單體之異氰酸基進行胺基甲酸酯鍵結而成的分子結構。Specifically, the polymerizable (meth)acrylate unit has the hydroxyl group in the hydroxyl-containing (meth)acrylate unit described above and the isocyanate group of the isocyanate group-containing (meth)acrylic monomer undergoes amine. Molecular structure formed by hydroxyformate bonds.

上述丙烯酸系共聚物藉由含有含交聯性基之(甲基)丙烯酸酯單元之自由基聚合性碳-碳雙鍵，而能夠於上述拾取步驟之前，藉由照射活性能量射線(紫外線等)使黏著劑層22硬化。例如，藉由照射紫外線等活性能量射線，自光聚合起始劑產生自由基，藉由該自由基之作用，能夠使丙烯酸系共聚物彼此發生交聯反應。藉此，能夠使照射前之黏著劑層22之黏著力於照射後降低。並且，能夠將黏晶片10自黏著劑層22良好地剝離。 再者，作為活性能量射線，可採用紫外線、放射線、電子束。 The above-mentioned acrylic copolymer contains a radically polymerizable carbon-carbon double bond of a (meth)acrylate unit containing a cross-linkable group, and can be irradiated with active energy rays (ultraviolet, etc.) before the above-mentioned pickup step. The adhesive layer 22 is hardened. For example, by irradiating active energy rays such as ultraviolet rays, free radicals are generated from the photopolymerization initiator, and the acrylic copolymers can undergo a cross-linking reaction by the action of the free radicals. Thereby, the adhesive force of the adhesive layer 22 before irradiation can be reduced after irradiation. Furthermore, the die bonding wafer 10 can be peeled off from the adhesive layer 22 favorably. Furthermore, as active energy rays, ultraviolet rays, radiation, and electron beams can be used.

聚合性(甲基)丙烯酸酯單元可於丙烯酸系共聚物之聚合反應後藉由胺基甲酸酯化反應來製備。例如，於(甲基)丙烯酸烷基酯單體與含羥基之(甲基)丙烯酸系單體之共聚後，藉由使含羥基之(甲基)丙烯酸酯單元之一部分中的羥基與含異氰酸基之聚合性單體之異氰酸基進行胺基甲酸酯化反應，能夠得到聚合性(甲基)丙烯酸酯單元。The polymerizable (meth)acrylate unit can be prepared by urethanization reaction after the polymerization reaction of the acrylic copolymer. For example, after copolymerization of (meth)acrylic acid alkyl ester monomer and hydroxyl-containing (meth)acrylic monomer, by making the hydroxyl group in a part of the hydroxyl-containing (meth)acrylate unit and the isocontaining The isocyanate group of the polymerizable monomer of the cyanate group undergoes a urethanation reaction to obtain a polymerizable (meth)acrylate unit.

上述含異氰酸基之(甲基)丙烯酸系單體較佳為於分子中具有1個異氰酸基且具有1個(甲基)丙烯醯基。作為該單體，例如可例舉異氰酸2-甲基丙烯醯氧基乙酯。The isocyanate group-containing (meth)acrylic monomer preferably has one isocyanate group and one (meth)acrylyl group in the molecule. Examples of the monomer include 2-methacryloyloxyethyl isocyanate.

本實施方式中，上述丙烯酸系共聚物亦可包含除上述單體單元以外之單體單元。例如亦可包含(甲基)丙烯醯基嗎啉、N-乙烯基-2-吡咯啶酮或丙烯腈等各單元。In this embodiment, the acrylic copolymer may contain monomer units other than the above-mentioned monomer units. For example, each unit such as (meth)acrylmorpholine, N-vinyl-2-pyrrolidinone or acrylonitrile may be included.

於黏著劑層22所含之丙烯酸系共聚物中，上述各單元(各結構單元)可藉由 ¹H-NMR、 ¹³C-NMR等NMR分析、熱分解GC/MS分析、及紅外分光法等來確認。再者，丙烯酸系共聚物中之上述單元之莫耳比率通常由使丙烯酸系共聚物聚合時之調配量(添加量)來算出。 In the acrylic copolymer contained in the adhesive layer 22, each unit (each structural unit) mentioned above can be analyzed by NMR analysis such as ¹ H-NMR and ¹³ C-NMR, thermal decomposition GC/MS analysis, and infrared spectroscopy. to confirm. In addition, the molar ratio of the above-mentioned units in the acrylic copolymer is usually calculated from the blending amount (added amount) when polymerizing the acrylic copolymer.

上述丙烯酸系共聚物較佳為相對於(甲基)丙烯酸烷基酯單元100莫耳份，包含15莫耳份以上且60莫耳份以下之含交聯性基之(甲基)丙烯酸酯單元，且含交聯性基之(甲基)丙烯酸酯單元中之50莫耳%以上且95莫耳%以下如上所述地形成有胺基甲酸酯鍵。換言之，上述丙烯酸系共聚物較佳為相對於(甲基)丙烯酸烷基酯單元100莫耳份，包含15莫耳份以上且60莫耳份以下之含交聯性基之(甲基)丙烯酸酯單元，且含交聯性基之(甲基)丙烯酸酯單元中之50莫耳%以上且95莫耳%以下為具有自由基聚合性碳-碳雙鍵的聚合性(甲基)丙烯酸酯單元。藉此，能夠維持黏晶片10與硬化前之黏著劑層22之黏著力，另一方面，能夠使黏晶片10與硬化後之黏著劑層22之剝離性更良好。The acrylic copolymer preferably contains 15 to 60 mole parts of crosslinkable group-containing (meth)acrylate units based on 100 mole parts of (meth)acrylic acid alkyl ester units. , and 50 mol% or more and 95 mol% or less of the crosslinkable group-containing (meth)acrylate units have urethane bonds formed as described above. In other words, the acrylic copolymer preferably contains 15 to 60 mole parts of crosslinkable group-containing (meth)acrylic acid per 100 mole parts of alkyl (meth)acrylate units. ester units, and 50 mol% or more and 95 mol% or less of the (meth)acrylate units containing cross-linkable groups are polymerizable (meth)acrylates with radically polymerizable carbon-carbon double bonds. unit. Thereby, the adhesion between the die attach chip 10 and the adhesive layer 22 before hardening can be maintained, and on the other hand, the peelability between the die attach chip 10 and the adhesive layer 22 after hardening can be improved.

上述丙烯酸系共聚物較佳為相對於(甲基)丙烯酸烷基酯單元100莫耳份包含19莫耳份以上且55莫耳份以下之聚合性(甲基)丙烯酸酯單元，更佳為包含23莫耳份以上。藉此，能夠維持黏晶片10與硬化前之黏著劑層22之黏著力，另一方面，能夠使黏晶片10與硬化後之黏著劑層22之剝離性更良好。The acrylic copolymer preferably contains 19 to 55 mole parts of polymerizable (meth)acrylate units based on 100 mole parts of (meth)acrylic acid alkyl ester units, and more preferably contains More than 23 moles. Thereby, the adhesion between the die attach chip 10 and the adhesive layer 22 before hardening can be maintained, and on the other hand, the peelability between the die attach chip 10 and the adhesive layer 22 after hardening can be improved.

本實施方式中，切晶帶20之黏著劑層22能夠進一步包含之異氰酸酯化合物於分子中具有複數個異氰酸基。藉由使異氰酸酯化合物於分子中具有複數個異氰酸基，能夠使黏著劑層22中之丙烯酸系共聚物間進行交聯反應。詳細而言，使異氰酸酯化合物之一個異氰酸基與丙烯酸系共聚物之羥基反應，使另一個異氰酸基與其他丙烯酸系共聚物之羥基反應，藉此能夠進行經由異氰酸酯化合物之交聯反應。 再者，異氰酸酯化合物亦可為經胺基甲酸酯化反應等而合成之化合物。 In this embodiment, the adhesive layer 22 of the dicing belt 20 can further include an isocyanate compound having a plurality of isocyanate groups in the molecule. By making the isocyanate compound have a plurality of isocyanate groups in the molecule, the acrylic copolymers in the adhesive layer 22 can undergo a cross-linking reaction. Specifically, one isocyanate group of the isocyanate compound is reacted with the hydroxyl group of the acrylic copolymer, and the other isocyanate group is reacted with the hydroxyl group of the other acrylic copolymer, thereby enabling cross-linking reaction via the isocyanate compound. . Furthermore, the isocyanate compound may be a compound synthesized through a urethanation reaction or the like.

作為異氰酸酯化合物，例如可例舉脂肪族二異氰酸酯、脂環族二異氰酸酯、或芳香脂肪族二異氰酸酯等二異氰酸酯。Examples of the isocyanate compound include diisocyanates such as aliphatic diisocyanate, alicyclic diisocyanate, or aromatic aliphatic diisocyanate.

進而，作為異氰酸酯化合物，例如可例舉二異氰酸酯之二聚體、三聚體等聚合多異氰酸酯、多亞甲基多伸苯基多異氰酸酯。Furthermore, examples of the isocyanate compound include polymerized polyisocyanates such as dimers and trimers of diisocyanate, and polymethylene polyphenylene polyisocyanate.

此外，作為異氰酸酯化合物，例如可例舉使過量之上述異氰酸酯化合物與含活性氫之化合物進行反應而得到之多異氰酸酯。作為含活性氫之化合物，可例舉含活性氫之低分子量化合物、含活性氫之高分子量化合物等。 再者，作為異氰酸酯化合物，亦可使用脲基甲酸酯化多異氰酸酯、縮二脲化多異氰酸酯等。 上述異氰酸酯化合物可單獨使用1種或組合使用2種以上。 Examples of the isocyanate compound include a polyisocyanate obtained by reacting an excess amount of the isocyanate compound and an active hydrogen-containing compound. Examples of the active hydrogen-containing compound include active hydrogen-containing low molecular weight compounds, active hydrogen-containing high molecular weight compounds, and the like. Furthermore, as the isocyanate compound, allophanated polyisocyanate, biuretized polyisocyanate, etc. can also be used. The isocyanate compound mentioned above can be used individually by 1 type or in combination of 2 or more types.

作為上述異氰酸酯化合物，較佳為芳香族二異氰酸酯與含活性氫之低分子量化合物之反應物。芳香族二異氰酸酯之反應物由於異氰酸基之反應速度較慢，故使得包含該反應物之黏著劑層22過度地硬化得到抑制。作為上述異氰酸酯化合物，較佳為於分子中具有3個以上異氰酸基之化合物。As the isocyanate compound, a reaction product of an aromatic diisocyanate and an active hydrogen-containing low molecular weight compound is preferred. Since the reaction speed of the isocyanate group of the reactant of aromatic diisocyanate is relatively slow, excessive hardening of the adhesive layer 22 containing the reactant is suppressed. As the isocyanate compound, a compound having three or more isocyanate groups in the molecule is preferred.

本實施方式中，黏著劑層22所包含之聚合起始劑為能夠藉由所施加之熱能、光能而使聚合反應起始之化合物。藉由使黏著劑層22包含聚合起始劑，而於對黏著劑層22施加了熱能或光能時能夠使丙烯酸聚合物間之交聯反應進行。詳細而言，能夠於具有含有自由基聚合性碳-碳雙鍵之聚合性(甲基)丙烯酸酯單元之丙烯酸系共聚物間，使聚合性基彼此之聚合反應起始，而使黏著劑層22硬化。藉此，能夠使黏著劑層22之黏著力降低，於拾取步驟中，能夠自硬化之黏著劑層22將黏晶片10容易地剝離。 作為聚合起始劑，例如採用光聚合起始劑或熱聚合起始劑等。作為聚合起始劑，可使用通常之市售製品。 In this embodiment, the polymerization initiator included in the adhesive layer 22 is a compound that can initiate a polymerization reaction by applied thermal energy or light energy. By making the adhesive layer 22 contain a polymerization initiator, when thermal energy or light energy is applied to the adhesive layer 22, the cross-linking reaction between the acrylic polymers can proceed. Specifically, between an acrylic copolymer having a polymerizable (meth)acrylate unit containing a radically polymerizable carbon-carbon double bond, the polymerization reaction of the polymerizable groups can be initiated to make the adhesive layer 22 hardened. In this way, the adhesive force of the adhesive layer 22 can be reduced, and during the pick-up step, the adhesive wafer 10 can be easily peeled off from the self-hardened adhesive layer 22 . As the polymerization initiator, for example, a photopolymerization initiator or a thermal polymerization initiator is used. As the polymerization initiator, generally commercially available products can be used.

黏著劑層22可進而包含除上述成分以外之其他成分。作為其他成分，例如可例舉黏著賦予劑、塑化劑、填充劑、抗老化劑、抗氧化劑、紫外線吸收劑、光穩定劑、耐熱穩定劑、抗靜電劑、界面活性劑、輕剝離化劑等。其他成分之種類及使用量可根據目的來適當選擇。The adhesive layer 22 may further include other components in addition to the above-mentioned components. Examples of other components include adhesion-imparting agents, plasticizers, fillers, anti-aging agents, antioxidants, ultraviolet absorbers, light stabilizers, heat-resistant stabilizers, antistatic agents, surfactants, and light release agents. wait. The types and usage amounts of other ingredients can be appropriately selected depending on the purpose.

＜切晶黏晶膜之黏晶片＞ 黏晶片10如圖1所示，重疊於上述切晶帶20之黏著劑層22。 ＜Chip-cutting die-bonding film＞ As shown in FIG. 1 , the die bonding chip 10 overlaps the adhesive layer 22 of the die cutting belt 20 .

黏晶片10之厚度並無特別限定，例如為1 μm以上且200 μm以下。該厚度可為3 μm以上且150 μm以下，亦可為5 μm以上且140 μm以下。再者，當黏晶片10為積層體時，上述厚度為積層體之總厚度。The thickness of the die attach 10 is not particularly limited, but is, for example, 1 μm or more and 200 μm or less. The thickness may be 3 μm or more and 150 μm or less, or may be 5 μm or more and 140 μm or less. Furthermore, when the die bonding wafer 10 is a laminated body, the above-mentioned thickness is the total thickness of the laminated body.

黏晶片10例如可如圖1所示，具有單層結構。本說明書中，單層係指僅具有由相同組合物形成之層。積層有複數個由相同組合物形成之層之形態亦為單層。 另一方面，黏晶片10亦可具有積層有例如由2種以上之不同組合物分別形成之層的多層結構。黏晶片10具有多層結構時，構成黏晶片10之至少1層包含後述含交聯性基之丙烯酸聚合物等，並根據需要還包含熱固性樹脂即可。 The die bonding wafer 10 may, for example, have a single-layer structure as shown in FIG. 1 . In this specification, a single layer means a layer having only the same composition. A laminate with multiple layers made of the same composition is also a single layer. On the other hand, the die attach wafer 10 may have a multilayer structure in which layers formed of, for example, two or more different compositions are laminated. When the die attach chip 10 has a multi-layer structure, at least one layer constituting the die attach chip 10 may contain a cross-linkable group-containing acrylic polymer or the like described below, and may further include a thermosetting resin if necessary.

黏晶片10與切晶帶20之黏著劑層22之間之黏著劑層22於硬化前之剝離力(黏晶片10及黏著劑層22均未硬化之狀態下之剝離力)可為0.30[N/20 mm]以上，亦可為0.50[N/20mm]以上。又，上述硬化前之剝離力可為3.00[N/20 mm]以下，亦可未達2.50[N/20 mm]，亦可為2.00[N/20 mm]以下。 黏晶片10與切晶帶20之黏著劑層22之間之黏著劑層22於硬化後之剝離力(黏晶片10未硬化且黏著劑層22充分硬化後之剝離力)可為0.03[N/20 mm]以上，亦可為0.05[N/20 mm]以上。又，可為0.35[N/20 mm]以下，亦可為0.25[N/20 mm]以下。 再者，為了使黏著劑層22充分硬化，例如對黏著劑層22照射強度300 mJ/cm ²之紫外線。 The peeling force of the adhesive layer 22 between the die bonding wafer 10 and the adhesive layer 22 of the die cutting belt 20 before hardening (the peeling force when neither the die bonding wafer 10 nor the adhesive layer 22 hardens) can be 0.30 [N /20 mm] or more, or 0.50 [N/20mm] or more. In addition, the peeling force before hardening may be 3.00 [N/20 mm] or less, may be less than 2.50 [N/20 mm], or may be 2.00 [N/20 mm] or less. The peeling force of the adhesive layer 22 between the die bonding wafer 10 and the adhesive layer 22 of the die cutting belt 20 after hardening (the peeling force after the die bonding wafer 10 is not hardened and the adhesive layer 22 is fully hardened) can be 0.03 [N/ 20 mm] or more, or 0.05 [N/20 mm] or more. Moreover, it may be 0.35 [N/20 mm] or less, or it may be 0.25 [N/20 mm] or less. Furthermore, in order to fully harden the adhesive layer 22 , for example, the adhesive layer 22 is irradiated with ultraviolet light having an intensity of 300 mJ/cm ² .

上述黏著劑層22與黏晶片10之間之硬化後之剝離力係藉由以下之測定法進行測定。根據需要，首先自黏晶片10將剝離襯墊剝離而使黏晶片10之一個面露出。繼而，於黏晶片10之露出面貼合襯底帶(例如製品名「ELP BT315」、日東電工公司製造)。使用日東精機公司製造之高壓水銀燈(製品名「UM-810」、60 mW/cm ²)，自基材層側照射強度300 mJ/cm ²之紫外線而使黏著劑層硬化。然後，切出黏著劑層22以達到寬度50 mm×長度100 mm之尺寸，而製作測定用樣品。針對所製作之測定用樣品，使用拉伸試驗器(例如製品名「AUTOGRAPH AGX-V」、島津製作所公司製造)實施T型剝離試驗。試驗條件為溫度23℃、拉伸速度300 mm/分鐘。再者，關於黏著劑層22於硬化前之上述剝離力，除了自硬化前之黏著劑層22切出黏著劑層22以達到寬度20 mm×長度100 mm之尺寸而製作測定用樣品這一點以外，與上述方法同樣地進行測定。 The peeling force after hardening between the adhesive layer 22 and the die bonding chip 10 is measured by the following measurement method. If necessary, first peel off the release liner from the self-adhesive wafer 10 to expose one surface of the adhesive wafer 10 . Then, a substrate tape (for example, product name "ELP BT315", manufactured by Nitto Denko Co., Ltd.) is bonded to the exposed surface of the bonding chip 10 . Using a high-pressure mercury lamp manufactured by Nitto Seiki Co., Ltd. (product name "UM-810", 60 mW/cm ² ), ultraviolet rays with an intensity of 300 mJ/cm ² are irradiated from the base material layer side to harden the adhesive layer. Then, the adhesive layer 22 was cut out to a size of 50 mm in width and 100 mm in length to prepare a sample for measurement. A T-type peel test is performed on the prepared measurement sample using a tensile tester (for example, product name "AUTOGRAPH AGX-V", manufactured by Shimadzu Corporation). The test conditions are temperature 23°C and tensile speed 300 mm/min. In addition, regarding the above-mentioned peeling force of the adhesive layer 22 before hardening, the adhesive layer 22 is cut out from the adhesive layer 22 before hardening to a size of 20 mm in width × 100 mm in length to prepare a sample for measurement. , measured in the same manner as above.

例如，於黏著劑層22中所含之丙烯酸系共聚物之分子中，藉由提高烷基部分之碳數少之(甲基)丙烯酸烷基酯單元之比率、或提高含羥基之(甲基)丙烯酸酯單元之比率，能夠提高上述剝離力。另一方面，例如於黏著劑層22所含之丙烯酸系共聚物之分子中，藉由提高烷基部分之碳數多之(甲基)丙烯酸烷基酯單元之比率、或降低含羥基之(甲基)丙烯酸酯單元之比率，能夠降低上述剝離力。For example, in the molecules of the acrylic copolymer contained in the adhesive layer 22, by increasing the ratio of (meth)acrylic acid alkyl ester units with a small carbon number in the alkyl part, or increasing the hydroxyl-containing (methyl ) ratio of acrylate units can improve the above-mentioned peeling force. On the other hand, for example, in the molecules of the acrylic copolymer contained in the adhesive layer 22, by increasing the ratio of alkyl (meth)acrylate units with a large number of carbon atoms in the alkyl part, or by reducing the ratio of (meth)acrylic acid alkyl ester units containing hydroxyl groups. The ratio of meth)acrylate units can reduce the above-mentioned peeling force.

黏晶片10包含於分子中具有藉由熱硬化處理而發生交聯反應之交聯性基的含交聯性基之丙烯酸聚合物。該含交聯性基之丙烯酸聚合物為至少使(甲基)丙烯酸酯單體聚合而得到之高分子化合物。The die bonding chip 10 includes a crosslinkable group-containing acrylic polymer having a crosslinkable group in the molecule that undergoes a crosslinking reaction by thermal hardening treatment. The crosslinkable group-containing acrylic polymer is a polymer compound obtained by polymerizing at least a (meth)acrylic acid ester monomer.

上述含交聯性基之丙烯酸聚合物通常於側鏈具有上述交聯性基。上述含交聯性基之丙烯酸聚合物亦可於側鏈之末端具有上述交聯性基。再者，上述含交聯性基之丙烯酸聚合物亦可以於主鏈之兩端中之至少一端具有上述交聯性基。The above-mentioned crosslinkable group-containing acrylic polymer usually has the above-mentioned crosslinkable group in a side chain. The above-mentioned crosslinkable group-containing acrylic polymer may also have the above-mentioned crosslinkable group at the end of a side chain. Furthermore, the above-mentioned crosslinkable group-containing acrylic polymer may also have the above-mentioned crosslinkable group at at least one of both ends of the main chain.

上述含交聯性基之丙烯酸聚合物於分子中所具有之交聯性基只要為藉由熱硬化處理而發生交聯反應之官能基，則無特別限定。The crosslinkable group contained in the molecule of the crosslinkable group-containing acrylic polymer is not particularly limited as long as it is a functional group that causes a crosslinking reaction by thermal hardening treatment.

作為交聯性基，例如可例舉羥基或羧基等。該等交聯性基能夠與環氧基或異氰酸基發生交聯反應。例如，於分子中具有羥基或羧基之至少一者之上述含交聯性基之丙烯酸聚合物與在分子中具有環氧基或異氰酸基之化合物(例如後述之環氧樹脂等)之間能夠發生交聯反應。Examples of the crosslinkable group include a hydroxyl group and a carboxyl group. These cross-linking groups can undergo cross-linking reactions with epoxy groups or isocyanate groups. For example, between the above-mentioned cross-linkable group-containing acrylic polymer having at least one of a hydroxyl group or a carboxyl group in the molecule and a compound having an epoxy group or an isocyanate group in the molecule (such as an epoxy resin described below) Cross-linking reactions can occur.

又，作為交聯性基，例如可例舉環氧基或異氰酸基等。該等交聯性基能夠與羥基、羧基發生交聯反應。例如，於分子中具有環氧基或異氰酸基之至少一者之上述含交聯性基之丙烯酸聚合物與在分子中具有羥基或羧基之至少一者之化合物(例如後述之酚樹脂等)之間能夠發生交聯反應。Examples of the crosslinkable group include an epoxy group, an isocyanate group, and the like. These cross-linking groups can undergo cross-linking reactions with hydroxyl groups and carboxyl groups. For example, the above-mentioned cross-linkable group-containing acrylic polymer having at least one of an epoxy group or an isocyanate group in the molecule and a compound having at least one of a hydroxyl group or a carboxyl group in the molecule (such as a phenol resin described below, etc. ) can undergo cross-linking reactions.

本實施方式中，黏晶片10所含之含交聯性基之丙烯酸聚合物較佳為含有羥基或羧基之至少一者作為交聯性基。藉此，能夠使黏晶片10更良好地接著於被接著體。In this embodiment, the crosslinkable group-containing acrylic polymer contained in the die attach chip 10 preferably contains at least one of a hydroxyl group or a carboxyl group as a crosslinkable group. Thereby, the die attach wafer 10 can be better adhered to the adherend.

上述含交聯性基之丙烯酸聚合物中，含交聯性基之單體之結構單元所占之比率可為0.1質量%以上且60.0質量%以下，可為0.5質量%以上且40.0質量%以下，可為1.0質量%以上且30.0質量%以下，亦可為3.0質量%以上且20.0質量%以下。 藉由使上述比率為0.1質量%以上，能夠使對黏晶片10進行熱硬化處理時之硬化充分進行。另一方面，藉由使上述比率為60.0質量%以下，能夠適度地抑制含交聯性基之丙烯酸聚合物之交聯反應性而提高經時穩定性。 再者，結構單元係指使含交聯性基之丙烯酸聚合物聚合時之單體(例如丙烯酸2-乙基己酯、丙烯酸羥基乙酯等)聚合後之源自各單體的結構。以下同樣。 In the above-mentioned crosslinkable group-containing acrylic polymer, the proportion of the structural units of the crosslinkable group-containing monomer may be 0.1 mass% or more and 60.0 mass% or less, and may be 0.5 mass% or more and 40.0 mass% or less. , may be 1.0 mass% or more and 30.0 mass% or less, or may be 3.0 mass% or more and 20.0 mass% or less. By setting the above-mentioned ratio to 0.1 mass % or more, hardening when the die bonding wafer 10 is thermally hardened can be sufficiently advanced. On the other hand, by setting the above ratio to 60.0% by mass or less, the crosslinking reactivity of the crosslinkable group-containing acrylic polymer can be moderately suppressed and the stability over time can be improved. In addition, the structural unit refers to the structure derived from each monomer after polymerizing a monomer (for example, 2-ethylhexyl acrylate, hydroxyethyl acrylate, etc.) when polymerizing an acrylic polymer containing a crosslinkable group. Same below.

上述含交聯性基之丙烯酸聚合物例如可藉由使用自由基聚合起始劑之通常聚合方法來合成。The crosslinkable group-containing acrylic polymer can be synthesized, for example, by a common polymerization method using a radical polymerization initiator.

上述含交聯性基之丙烯酸聚合物較佳為包含以質量比率計最多之分子中之結構單元中之(甲基)丙烯酸烷基酯單體之結構單元。作為該(甲基)丙烯酸烷基酯單體，例如可例舉烷基(烴基)之碳數為1以上且18以下之(甲基)丙烯酸C1～C18烷基酯單體。The above-mentioned crosslinkable group-containing acrylic polymer preferably contains a structural unit of (meth)acrylic acid alkyl ester monomer among the structural units in the molecule that is the largest in terms of mass ratio. Examples of the (meth)acrylic acid alkyl ester monomer include C1-C18 (meth)acrylic acid C1-C18 alkyl ester monomers in which the number of carbon atoms in the alkyl group (hydrocarbon group) is from 1 to 18.

作為(甲基)丙烯酸烷基酯單體，例如可例舉：(甲基)丙烯酸飽和直鏈狀烷基酯單體、(甲基)丙烯酸飽和支鏈狀烷基酯單體等。Examples of the (meth)acrylic acid alkyl ester monomer include: (meth)acrylic acid saturated linear alkyl ester monomer, (meth)acrylic acid saturated branched chain alkyl ester monomer, and the like.

作為(甲基)丙烯酸飽和直鏈狀烷基酯單體，可例舉：(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸正庚酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸正壬酯、(甲基)丙烯酸正癸酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸肉豆蔻酯、(甲基)丙烯酸棕櫚酯、(甲基)丙烯酸硬脂酯等。再者，直鏈狀烷基部分之碳數較佳為2以上且8以下。 作為(甲基)丙烯酸飽和支鏈狀烷基酯單體，可例舉：(甲基)丙烯酸異庚酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸2-乙基己酯等。再者，烷基部分亦可具有iso結構、sec結構、neo結構、或tert結構中之任一種。 Examples of the (meth)acrylic acid saturated linear alkyl ester monomer include: (meth)acrylic acid methyl ester, (meth)acrylic acid ethyl ester, (meth)acrylic acid n-propyl ester, (meth)acrylic acid n-butyl ester, n-heptyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, n-decyl (meth)acrylate, tridecyl (meth)acrylate , lauryl (meth)acrylate, myristyl (meth)acrylate, palmityl (meth)acrylate, stearyl (meth)acrylate, etc. Furthermore, the carbon number of the linear alkyl moiety is preferably 2 or more and 8 or less. Examples of the saturated branched alkyl (meth)acrylate monomer include: (meth)isoheptyl acrylate, (meth)isooctyl acrylate, (meth)isononyl acrylate, (meth)acrylate ) Isodecyl acrylate, 2-ethylhexyl (meth)acrylate, etc. Furthermore, the alkyl moiety may have any one of an iso structure, a sec structure, a neo structure, or a tert structure.

上述含交聯性基之丙烯酸聚合物包含源自能夠與(甲基)丙烯酸烷基酯單體共聚之含交聯性基之單體的結構單元。 本實施方式中，上述含交聯性基之丙烯酸聚合物為至少使(甲基)丙烯酸烷基酯單體與含交聯性基之單體共聚而成之丙烯酸聚合物。換言之，上述含交聯性基之丙烯酸聚合物具有(甲基)丙烯酸烷基酯單體之結構單元與含交聯性基之單體之結構單元以無規順序連接的結構。 The above-mentioned crosslinkable group-containing acrylic polymer contains a structural unit derived from a crosslinkable group-containing monomer copolymerizable with a (meth)acrylic acid alkyl ester monomer. In this embodiment, the crosslinkable group-containing acrylic polymer is an acrylic polymer obtained by copolymerizing at least an alkyl (meth)acrylate monomer and a crosslinkable group-containing monomer. In other words, the crosslinkable group-containing acrylic polymer has a structure in which the structural units of the (meth)acrylic acid alkyl ester monomer and the structural units of the crosslinkable group-containing monomer are connected in random order.

作為上述含交聯性基之單體，例如可例舉：含羧基之(甲基)丙烯酸系單體、(甲基)丙烯酸酐系單體、含羥基(羥基)之(甲基)丙烯酸系單體、含環氧基(縮水甘油基)之(甲基)丙烯酸系單體、含異氰酸基之(甲基)丙烯酸系單體、含磺酸基之(甲基)丙烯酸系單體、含磷酸基之(甲基)丙烯酸系單體、丙烯醯胺、丙烯腈等含官能基之單體等。再者，上述含交聯性基之單體亦可於分子中具有醚基或酯基等。Examples of the crosslinkable group-containing monomer include carboxyl group-containing (meth)acrylic monomers, (meth)acrylic anhydride monomers, and hydroxyl group-containing (meth)acrylic monomers. Monomer, epoxy group (glycidyl)-containing (meth)acrylic monomer, isocyanate group-containing (meth)acrylic monomer, sulfonic acid group-containing (meth)acrylic monomer , (meth)acrylic monomers containing phosphate groups, acrylamide, acrylonitrile and other functional group-containing monomers, etc. Furthermore, the above-mentioned crosslinkable group-containing monomer may also have an ether group, an ester group, etc. in the molecule.

上述含交聯性基之丙烯酸聚合物較佳為： 選自由含羧基之(甲基)丙烯酸系單體、含羥基之(甲基)丙烯酸系單體、含環氧基之(甲基)丙烯酸系單體及含異氰酸基之(甲基)丙烯酸系單體所組成之群中之至少1種含交聯性基之單體與 (甲基)丙烯酸烷基酯(尤其是烷基部分之碳數為8以下之(甲基)丙烯酸烷基酯)之共聚物 The above-mentioned cross-linkable group-containing acrylic polymer is preferably: Selected from carboxyl-containing (meth)acrylic monomers, hydroxyl-containing (meth)acrylic monomers, epoxy-containing (meth)acrylic monomers and isocyanate-containing (methyl) At least one monomer containing a cross-linkable group among the group consisting of acrylic monomers and Copolymer of alkyl (meth)acrylate (especially alkyl (meth)acrylate with a carbon number of 8 or less in the alkyl part)

作為含羧基之(甲基)丙烯酸系單體，例如可例舉：(甲基)丙烯酸、單(2-(甲基)丙烯醯氧基乙基)丁二酸酯單體等。再者，羧基可配置於單體結構之末端部分，亦可與末端部分以外之烴鍵結。 作為含羥基之(甲基)丙烯酸系單體，例如可例舉：(甲基)丙烯酸羥基乙酯單體、(甲基)丙烯酸羥基丙酯單體、(甲基)丙烯酸羥基丁酯單體等。再者，羥基可配置於單體結構之末端部分，亦可與末端部分以外之烴鍵結。 作為含環氧基之(甲基)丙烯酸系單體，例如可例舉：(甲基)丙烯酸縮水甘油酯單體、(甲基)丙烯酸4-羥基丁酯縮水甘油醚等。再者，環氧基可配置於單體結構之末端部分，亦可與末端部分以外之烴鍵結。 作為含異氰酸基之(甲基)丙烯酸系單體，例如可例舉：異氰酸2-甲基丙烯醯氧基乙酯、1,1-(雙丙烯醯氧基甲基)乙基異氰酸酯、2-丙烯醯氧基乙基異氰酸酯、2-(2-甲基丙烯醯氧基乙氧基)乙基異氰酸酯等。 Examples of the carboxyl group-containing (meth)acrylic monomer include (meth)acrylic acid, mono(2-(meth)acryloxyethyl)succinate monomer, and the like. Furthermore, the carboxyl group may be arranged at the terminal part of the monomer structure, or may be bonded to hydrocarbons other than the terminal part. Examples of the hydroxyl-containing (meth)acrylic monomer include: (meth)hydroxyethyl acrylate monomer, (meth)hydroxypropyl acrylate monomer, and (meth)hydroxybutyl acrylate monomer. wait. Furthermore, the hydroxyl group may be arranged at the terminal part of the monomer structure, or may be bonded to hydrocarbons other than the terminal part. Examples of the epoxy group-containing (meth)acrylic monomer include: (meth)acrylic acid glycidyl ester monomer, (meth)acrylic acid 4-hydroxybutyl glycidyl ether, and the like. Furthermore, the epoxy group can be arranged at the terminal part of the monomer structure, and can also be bonded to hydrocarbons other than the terminal part. Examples of the isocyanate group-containing (meth)acrylic monomer include 2-methacryloxyethyl isocyanate and 1,1-(bisacrylyloxymethyl)ethyl isocyanate. Isocyanate, 2-acryloxyethyl isocyanate, 2-(2-methacryloxyethoxy)ethyl isocyanate, etc.

黏晶片10還可包含除上述含交聯性基之丙烯酸聚合物以外之成分。例如黏晶片10可進而包含熱固性樹脂或除上述含交聯性基之丙烯酸聚合物以外之熱塑性樹脂之至少一者。The die attach chip 10 may also contain components other than the above-mentioned cross-linkable group-containing acrylic polymer. For example, the die attach chip 10 may further include at least one of a thermosetting resin or a thermoplastic resin other than the above-mentioned cross-linkable group-containing acrylic polymer.

作為熱固性樹脂，例如可例舉：環氧樹脂、酚樹脂、胺基樹脂、不飽和聚酯樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂、熱固性聚醯亞胺樹脂等。作為上述熱固性樹脂，可僅採用1種或採用2種以上。Examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, polysiloxy resin, thermosetting polyimide resin, and the like. As the above-mentioned thermosetting resin, only one type or two or more types may be used.

作為上述環氧樹脂，例如可例舉：雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、芴型、酚系酚醛清漆型、甲酚酚醛清漆型、三羥基苯基甲烷型、四羥苯基乙烷型、乙內醯脲型、三縮水甘油基異氰脲酸酯型、或縮水甘油胺型之各環氧樹脂。Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, and naphthalene type. , fluorene type, phenolic novolac type, cresol novolak type, trihydroxyphenylmethane type, tetrahydroxyphenylethane type, hydantoin type, triglycidyl isocyanurate type, or shrinkage Glycerylamine type epoxy resins.

酚樹脂可作為環氧樹脂之硬化劑發揮作用。作為酚樹脂，例如可例舉酚醛清漆型酚樹脂、可溶酚醛型酚樹脂、聚對羥基苯乙烯等聚羥基苯乙烯等。 作為酚醛清漆型酚樹脂，例如可例舉酚系酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基酚系酚醛清漆樹脂、壬基酚系酚醛清漆樹脂等。 酚樹脂之羥基當量[g/eq]例如可為90以上且220以下。 作為上述酚樹脂，可僅採用1種或採用2種以上。 Phenolic resin can function as a hardener for epoxy resin. Examples of the phenol resin include novolac-type phenol resin, resol-type phenol resin, polyhydroxystyrene such as polyparahydroxystyrene, and the like. Examples of the novolac-type phenol resin include phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolac resin, nonylphenol novolac resin, and the like. The hydroxyl equivalent [g/eq] of the phenol resin may be, for example, 90 or more and 220 or less. As the above-mentioned phenol resin, only one type or two or more types may be used.

本實施方式中，黏晶片10亦可含有彼此發生交聯反應之上述含交聯性基之丙烯酸聚合物及熱固性樹脂。In this embodiment, the die bonding chip 10 may also contain the above-mentioned cross-linkable group-containing acrylic polymer and thermosetting resin that undergo cross-linking reactions with each other.

例如、黏晶片10可含有含環氧基之丙烯酸聚合物作為含交聯性基之丙烯酸聚合物，且含有酚樹脂作為熱固性樹脂。藉此，含交聯性基之丙烯酸聚合物之環氧基與酚樹脂之羥基發生交聯反應，而能夠使黏晶片10充分硬化。For example, the die attach 10 may contain an epoxy group-containing acrylic polymer as the cross-linkable group-containing acrylic polymer, and a phenol resin as the thermosetting resin. Thereby, the epoxy group of the acrylic polymer containing a cross-linkable group and the hydroxyl group of the phenolic resin undergo a cross-linking reaction, so that the die attach chip 10 can be fully hardened.

作為黏晶片10可包含之除上述含交聯性基之丙烯酸聚合物以外之熱塑性樹脂，例如可例舉天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-聚醯胺樹脂及6,6-聚醯胺樹脂等聚醯胺樹脂、苯氧基樹脂、於分子中不含交聯性官能基之丙烯酸樹脂、PET或PBT等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、氟樹脂等。 作為上述熱塑性樹脂，可僅採用1種或採用2種以上。 The die attach chip 10 may include thermoplastic resins other than the above-mentioned cross-linkable group-containing acrylic polymer, such as natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, and ethylene-vinyl acetate. Ester copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, 6-polyamide resin and 6,6-polyamide resin Such as polyamide resin, phenoxy resin, acrylic resin without cross-linking functional groups in the molecule, saturated polyester resin such as PET or PBT, polyamide imine resin, fluorine resin, etc. As the above-mentioned thermoplastic resin, only one type or two or more types may be used.

黏晶片10中，上述含交聯性基之丙烯酸聚合物之含有率較佳為8質量%以上且100質量%以下，更佳為30質量%以上，進而較佳為40質量%以上。In the die bonding chip 10, the content rate of the cross-linkable group-containing acrylic polymer is preferably 8 mass% or more and 100 mass% or less, more preferably 30 mass% or more, and still more preferably 40 mass% or more.

黏晶片10中，相對於除填料以外之有機成分(例如，上述含交聯性基之丙烯酸聚合物、熱固性樹脂、硬化觸媒等、矽烷偶合劑、染料)之100質量份，上述含交聯性基之丙烯酸聚合物之含有比率較佳為15質量份以上且100質量份以下，更佳為40質量份以上且95質量份以下，進而較佳為60質量份以上。再者，藉由使黏晶片10中之熱固性樹脂之含有率發生變化，能夠調整黏晶片10之彈性及黏性。 另一方面，相對於上述有機成分100質量份，熱固性樹脂之含有比率亦可為40質量份以下。 In the die bonding chip 10, relative to 100 parts by mass of organic components other than fillers (for example, the above-mentioned cross-linkable group-containing acrylic polymer, thermosetting resin, curing catalyst, etc., silane coupling agent, dye), the above-mentioned cross-linking group-containing The content ratio of the acrylic polymer of the sexual group is preferably 15 parts by mass or more and 100 parts by mass or less, more preferably 40 parts by mass or more and 95 parts by mass or less, and still more preferably 60 parts by mass or more. Furthermore, by changing the content rate of the thermosetting resin in the die attach wafer 10, the elasticity and viscosity of the die attach wafer 10 can be adjusted. On the other hand, the content ratio of the thermosetting resin may be 40 parts by mass or less with respect to 100 parts by mass of the above-mentioned organic component.

黏晶片10亦可含有填料，亦可不含有填料。藉由改變黏晶片10中之填料之量，能夠更容易地調整黏晶片10之彈性及黏性。進而，能夠調整黏晶片10之導電性、導熱性、彈性模數等物性。The die bonding chip 10 may or may not contain fillers. By changing the amount of filler in the die bonding chip 10, the elasticity and viscosity of the die bonding chip 10 can be more easily adjusted. Furthermore, physical properties such as electrical conductivity, thermal conductivity, and elastic modulus of the die bonding chip 10 can be adjusted.

作為填料，可例舉無機填料及有機填料。作為填料，較佳為無機填料。 作為無機填料，例如可例舉包含氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、氮化硼、晶體二氧化矽、非晶二氧化矽等二氧化矽等之填料。又，作為無機填料之材質，可例舉鋁、金、銀、銅、鎳等金屬單質、或合金等。亦可為硼酸鋁晶鬚、非晶碳黑、石墨等填料。填料之形狀可為球狀、針狀、鱗片狀等各種形狀。作為填料，可僅採用上述1種或採用2種以上。 Examples of fillers include inorganic fillers and organic fillers. As the filler, an inorganic filler is preferred. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, boron nitride, and crystalline dielectric. Silica, amorphous silica and other silica fillers. In addition, examples of the material of the inorganic filler include simple metals such as aluminum, gold, silver, copper, and nickel, or alloys. It can also be fillers such as aluminum borate whiskers, amorphous carbon black, and graphite. The shape of the filler can be various shapes such as spherical, needle-like, and scaly. As the filler, only one of the above-mentioned types or two or more types may be used.

當黏晶片10包含填料時，上述填料之含有率可為黏晶片10之總質量之50質量%以下，可為40質量%以下，亦可為30質量%以下。再者，上述填料之含有率例如可為5質量%以上。When the die bonding chip 10 contains fillers, the content rate of the filler may be 50 mass% or less, 40 mass% or less, or 30 mass% or less of the total mass of the die bonding chip 10 . Furthermore, the content rate of the filler may be, for example, 5% by mass or more.

黏晶片10根據需要亦可包含其他成分。作為上述其他成分，例如可例舉硬化觸媒、阻燃劑、矽烷偶合劑、離子捕捉劑、染料等。 作為阻燃劑，例如可例舉：三氧化銻、五氧化銻、溴化環氧樹脂等。 作為矽烷偶合劑，例如可例舉：β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷等。 作為離子捕捉劑，例如可例舉：水滑石類、氫氧化鉍、苯并***等。 作為上述其他添加劑，可僅採用1種或採用2種以上。 The die bonding chip 10 may also contain other components as needed. Examples of the other components include a curing catalyst, a flame retardant, a silane coupling agent, an ion trapping agent, and a dye. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropyl Methyldiethoxysilane, etc. Examples of the ion scavenger include hydrotalcites, bismuth hydroxide, benzotriazole, and the like. As the above-mentioned other additives, only one type or two or more types may be used.

就容易調整彈性及黏性之方面而言，黏晶片10較佳為包含上述含交聯性基之丙烯酸聚合物、熱固性樹脂及填料。In terms of easy adjustment of elasticity and viscosity, the die bonding chip 10 preferably includes the above-mentioned acrylic polymer containing cross-linkable groups, thermosetting resin and filler.

本實施方式之切晶黏晶膜1於使用前之狀態下亦可具備覆蓋黏晶片10之一個面(黏晶片10未與黏著劑層22重疊之面)之剝離襯墊。剝離襯墊用於保護黏晶片10，並於即將對黏晶片10貼附被接著體(例如半導體晶圓)之前剝離。 作為剝離襯墊，例如可以使用經聚矽氧系剝離劑、長鏈烷基系剝離劑、氟系剝離劑、硫化鉬等剝離劑表面處理之塑料膜或紙等。 剝離襯墊可作為用於支持黏晶片10之支持材料來利用。剝離襯墊適宜在對黏著劑層22重疊黏晶片10時使用。詳細而言，以積層有剝離襯墊與黏晶片10之狀態將黏晶片10重疊於黏著劑層22，於重疊後將剝離襯墊剝去(轉印)，藉此能夠對黏著劑層22重疊黏晶片10。 The die-cut die-bonding film 1 of this embodiment may also be provided with a release liner covering one surface of the die-bonding wafer 10 (the surface of the die-bonding wafer 10 not overlapping the adhesive layer 22) before use. The release liner is used to protect the adhesive wafer 10 and is peeled off just before the adhesive wafer 10 is attached to an adherend (such as a semiconductor wafer). As a release liner, for example, a plastic film or paper surface-treated with a release agent such as a silicone release agent, a long-chain alkyl release agent, a fluorine release agent, or molybdenum sulfide can be used. The release liner can be utilized as a support material for supporting the bonded wafer 10 . The release liner is suitable for use when laminating the adhesive layer 22 and bonding the wafer 10 . Specifically, the adhesive layer 22 can be overlapped by overlapping the adhesive layer 22 with the release liner and the adhesive chip 10 laminated thereon, and then peeling off the release liner (transferring) after overlapping. Stick the chip 10.

繼而，對本實施方式之黏晶片10、及切晶黏晶膜1之製造方法進行說明。Next, the manufacturing method of the die attach wafer 10 and the dicing die attach film 1 of this embodiment will be described.

＜切晶黏晶膜之製造方法＞ 本實施方式之切晶黏晶膜1之製造方法具備： 製作黏晶片10之步驟、 製作切晶帶20之步驟、及 將所製造之黏晶片10與切晶帶20重疊之步驟。 ＜Manufacturing method of die-cut die-bonding film＞ The manufacturing method of the die-cut die-bonding film 1 of this embodiment includes: 10 steps to make die bonding, Steps for making the cutting belt 20, and The step of overlapping the manufactured die bonding wafer 10 and the die cutting belt 20.

＜製作黏晶片之步驟＞ 製作黏晶片10之步驟具有： 製備用於形成黏晶片10之樹脂組合物之樹脂組合物製備步驟、及 由樹脂組合物形成黏晶片10之黏晶片形成步驟。 ＜Steps for making die bonding＞ The steps for making chip bonding 10 include: Resin composition preparation steps for preparing the resin composition used to form the die attach 10, and The die attach forming step of forming the die attach 10 from the resin composition.

樹脂組合物製備步驟中，例如藉由將上述含交聯性基之丙烯酸聚合物；環氧樹脂、酚樹脂或硬化觸媒中之任一者；及溶劑進行混合並使各樹脂溶解於溶劑中而製備樹脂組合物。藉由改變溶劑之量，能夠調整組合物之黏度。再者，作為該等樹脂，可使用市售之製品。In the step of preparing the resin composition, for example, the above-mentioned crosslinkable group-containing acrylic polymer; any one of the epoxy resin, phenol resin or curing catalyst; and the solvent are mixed and each resin is dissolved in the solvent. and prepare the resin composition. By changing the amount of solvent, the viscosity of the composition can be adjusted. In addition, as these resins, commercially available products can be used.

黏晶片形成步驟中，例如將如上所述地製備之樹脂組合物塗佈於剝離襯墊上。作為塗佈方法，並無特別限定，例如採用輥塗覆、網版塗覆等通常之塗佈方法。繼而，根據需要，藉由脫溶劑處理、硬化處理等使所塗佈之組合物硬化，而形成黏晶片10。In the die bonding forming step, for example, the resin composition prepared as described above is coated on a release liner. The coating method is not particularly limited, and for example, common coating methods such as roll coating and screen coating can be used. Then, if necessary, the applied composition is hardened through desolvation treatment, hardening treatment, etc. to form the die attach wafer 10 .

＜製作切晶帶之步驟＞ 製作切晶帶之步驟具備： 合成丙烯酸系共聚物之合成步驟； 自包含上述丙烯酸系共聚物、異氰酸酯化合物、聚合起始劑、溶劑、及根據目的而適當追加之其他成分之黏著劑組合物中使溶劑揮發而製作黏著劑層22之黏著劑層製作步驟； 製作基材層21之基材層製作步驟；及 藉由將黏著劑層22與基材層21貼合而使基材層21與黏著劑層22積層之積層步驟。 ＜Steps to make cutting tape＞ The steps for making crystal cutting tape include: Synthetic steps for synthesizing acrylic copolymer; The adhesive layer preparation step of evaporating the solvent from an adhesive composition containing the above-mentioned acrylic copolymer, isocyanate compound, polymerization initiator, solvent, and other components appropriately added according to the purpose to prepare the adhesive layer 22; The base material layer manufacturing steps for making the base material layer 21; and This is a lamination step of laminating the base material layer 21 and the adhesive layer 22 by bonding the adhesive layer 22 and the base material layer 21 together.

合成步驟中，例如藉由使烴部分之碳數為8以上且12以下之(甲基)丙烯酸C8～C12烷基酯單體與含羥基之(甲基)丙烯酸系單體進行自由基聚合，而合成丙烯酸系共聚物中間體。 自由基聚合可藉由通常之方法進行。例如，使上述各單體溶解於溶劑中，一邊加熱一邊攪拌並添加聚合起始劑，藉此能夠合成丙烯酸系共聚物中間體。為了調整丙烯酸系共聚物之分子量，亦可於鏈轉移劑之存在下進行聚合。 繼而，使丙烯酸系共聚物中間體所包含之含羥基之(甲基)丙烯酸酯單元之一部分羥基與含異氰酸基之聚合性單體之異氰酸基藉由胺基甲酸酯化反應進行鍵結。藉此，含羥基之(甲基)丙烯酸酯單元之一部分成為含有自由基聚合性碳-碳雙鍵之聚合性(甲基)丙烯酸酯單元。 胺基甲酸酯化反應可藉由通常之方法來進行。例如於溶劑及胺基甲酸酯化觸媒之存在下，一邊加熱一邊攪拌丙烯酸系共聚物中間體及含異氰酸基之聚合性單體。藉此，能夠使丙烯酸系共聚物中間體之羥基之一部分與含異氰酸基之聚合性單體之異氰酸基進行胺基甲酸酯鍵結。 In the synthesis step, for example, a (meth)acrylic acid C8-C12 alkyl ester monomer with a carbon number of 8 or more and 12 or less in the hydrocarbon part and a hydroxyl-containing (meth)acrylic monomer are radically polymerized, And synthesize acrylic copolymer intermediate. Free radical polymerization can be carried out by usual methods. For example, an acrylic copolymer intermediate can be synthesized by dissolving each of the above monomers in a solvent, stirring and adding a polymerization initiator while heating. In order to adjust the molecular weight of the acrylic copolymer, polymerization can also be performed in the presence of a chain transfer agent. Then, a part of the hydroxyl group of the hydroxyl-containing (meth)acrylate unit contained in the acrylic copolymer intermediate is reacted with the isocyanate group of the isocyanate group-containing polymerizable monomer through urethanation reaction. Perform bonding. Thereby, part of the hydroxyl-containing (meth)acrylate unit becomes a polymerizable (meth)acrylate unit containing a radically polymerizable carbon-carbon double bond. The urethanization reaction can be carried out by a usual method. For example, in the presence of a solvent and a urethanation catalyst, the acrylic copolymer intermediate and the isocyanate group-containing polymerizable monomer are stirred while heating. Thereby, a part of the hydroxyl group of the acrylic copolymer intermediate can be urethane-bonded with the isocyanate group of the isocyanate group-containing polymerizable monomer.

黏著劑層製作步驟中，例如使丙烯酸系共聚物、異氰酸酯化合物及聚合起始劑溶解於溶劑中，而製備黏著劑組合物。藉由改變溶劑之量，能夠調整組合物之黏度。繼而，將黏著劑組合物塗佈於剝離襯墊上。作為塗佈方法，例如可採用輥塗覆、網版塗覆、凹版塗覆等通常之塗佈方法。藉由對塗佈之組合物實施脫溶劑處理、固化處理等而使塗佈之黏著劑組合物固化，而製作黏著劑層22。In the adhesive layer preparation step, for example, an acrylic copolymer, an isocyanate compound and a polymerization initiator are dissolved in a solvent to prepare an adhesive composition. By changing the amount of solvent, the viscosity of the composition can be adjusted. Then, the adhesive composition is coated on the release liner. As the coating method, for example, general coating methods such as roll coating, screen coating, and gravure coating can be used. The applied adhesive composition is cured by subjecting the applied composition to desolvation treatment, curing treatment, etc., thereby forming the adhesive layer 22 .

基材層製作步驟中，可藉由通常之方法進行製膜而製作基材層。作為製膜方法，例如可例舉：壓延製膜法、有機溶劑中之流延法、密閉系統中之吹脹擠出法、T模擠出法、乾式層壓法等。還可採用共擠出成形法。再者，作為基材層21，亦可使用市售之膜等。In the base material layer production step, the base material layer can be produced by forming a film by a common method. Examples of the film forming method include: calendering film forming method, casting method in organic solvent, blow extrusion method in closed system, T-die extrusion method, dry lamination method, etc. Co-extrusion molding can also be used. In addition, as the base material layer 21, a commercially available film etc. can also be used.

於積層步驟中，使重疊於剝離襯墊之狀態之黏著劑層22與基材層21重疊並積層。再者，剝離襯墊亦可在直到使用前為止處於重疊於黏著劑層22之狀態。 再者，為了促進交聯劑與丙烯酸系共聚物之反應，又，為了促進交聯劑與基材層21之表面部分之反應，亦可於積層步驟之後，於50℃環境下實施48小時之熟化處理步驟。 In the lamination step, the adhesive layer 22 and the base material layer 21 in a state of being overlapped with the release liner are overlapped and laminated. Furthermore, the release liner may be in a state overlapped with the adhesive layer 22 until use. Furthermore, in order to promote the reaction between the cross-linking agent and the acrylic copolymer, and in order to promote the reaction between the cross-linking agent and the surface part of the base material layer 21, it is also possible to perform 48 hours in a 50°C environment after the lamination step. Aging process steps.

藉由該等步驟，能夠製造切晶帶20。Through these steps, the dicing belt 20 can be manufactured.

＜將黏晶片與切晶帶重疊之步驟＞ 於使黏晶片10與切晶帶20重疊之步驟中，將黏晶片10貼附於如上所述製造之切晶帶20之黏著劑層22。 ＜Steps to overlap the die bonding wafer and the die cutting tape＞ In the step of overlapping the die bonding chip 10 and the die cutting belt 20, the die bonding chip 10 is attached to the adhesive layer 22 of the die cutting belt 20 manufactured as above.

於上述貼附中，自切晶帶20之黏著劑層22及黏晶片10分別將剝離襯墊剝離，以黏晶片10與黏著劑層22直接接觸之方式將兩者貼合。例如，可藉由壓接進行貼合。貼合時之溫度並無特別限定，例如為30℃以上且50℃以下、較佳為35℃以上且45℃以下。貼合時之線壓並無特別限定，較佳為0.1 kgf/cm以上且20 kgf/cm以下，更佳為1 kgf/cm以上且10 kgf/cm以下。During the above attachment, the adhesive layer 22 of the die cutting tape 20 and the adhesive layer 10 are respectively peeled off from the release liner, and the adhesive layer 10 and the adhesive layer 22 are bonded together in a direct contact manner. For example, bonding can be achieved by crimping. The temperature during bonding is not particularly limited, but is, for example, 30°C or more and 50°C or less, preferably 35°C or more and 45°C or less. The linear pressure during bonding is not particularly limited, but is preferably 0.1 kgf/cm or more and 20 kgf/cm or less, and more preferably 1 kgf/cm or more and 10 kgf/cm or less.

經過上述步驟而如上所述地製造之切晶黏晶膜1例如可作為用於製造半導體裝置(半導體積體電路)之輔助用具來使用。以下，針對半導體裝置之製造方法(切晶黏晶膜之使用方法)進行說明。The die-cut die-bonding film 1 manufactured as described above through the above-mentioned steps can be used as an auxiliary tool for manufacturing a semiconductor device (semiconductor integrated circuit), for example. Hereinafter, a method for manufacturing a semiconductor device (how to use a die attach film) will be described.

＜半導體裝置之製造方法(製造半導體裝置時之切晶黏晶膜之使用方法)＞ 半導體裝置之製造方法中，通常自形成有電路面之半導體晶圓切出半導體晶片並進行組裝。此時，使用本實施方式之切晶黏晶膜作為製造輔助用具。 ＜Manufacturing method of semiconductor device (How to use die-cut die-bonding film when manufacturing semiconductor device)＞ In the manufacturing method of a semiconductor device, a semiconductor wafer is usually cut out from a semiconductor wafer on which a circuit surface is formed and assembled. At this time, the die-cut die-bonding film of this embodiment is used as a manufacturing auxiliary tool.

本實施方式之半導體裝置之製造方法具備： 將形成有電路面之半導體晶圓割斷成半導體晶片(Die)之割斷步驟；及 將貼附於上述切晶黏晶膜之上述黏著劑層之上述黏晶片與上述半導體晶片一起自上述黏著劑層進行剝離之拾取步驟。 The manufacturing method of the semiconductor device of this embodiment includes: The cutting step of cutting the semiconductor wafer on which the circuit surface is formed into semiconductor wafers (Die); and The pick-up step is to peel off the die-bonding wafer attached to the adhesive layer of the die-cutting die-bonding film together with the semiconductor wafer from the adhesive layer.

本實施方式之半導體裝置之製造方法中，割斷步驟例如具有：隱形切割步驟，於貼附有背面研磨帶之半導體晶圓之內部利用雷射光形成脆弱部分，進行藉由割斷處理而將半導體晶圓加工成半導體晶片(Die)的準備；背面研磨步驟，對貼附有背面研磨帶之半導體晶圓進行研削而減薄厚度；安裝步驟，將厚度已變薄之半導體晶圓之一面(例如與電路面處於相反側之面)貼附於黏晶片10，經由黏晶片10將半導體晶圓固定於切晶帶20；擴展步驟，藉由拉伸切晶帶20將半導體晶圓割斷而製作半導體晶片，使相鄰之半導體晶片之間隔擴大；拾取步驟，將黏晶片10與黏著劑層22之間剝離，以貼附有黏晶片10之狀態取出半導體晶片(Die)。 本實施方式之半導體裝置之製造方法進而具有：黏晶步驟，將貼附於半導體晶片之黏晶片10接著於被接著體之；硬化步驟，使接著於被接著體之黏晶片10硬化；引線接合步驟，將半導體晶片中之電子電路之電極與被接著體藉由引線進行電性連接；及密封步驟，利用熱固性樹脂將被接著體上之半導體晶片及引線進行密封。 In the method of manufacturing a semiconductor device according to this embodiment, the cutting step includes, for example, a stealth cutting step, in which a fragile portion is formed using laser light inside the semiconductor wafer to which the back polishing tape is attached, and the semiconductor wafer is cut through the cutting process. Preparation for processing into semiconductor wafers (Die); back grinding step, grinding the semiconductor wafer with back grinding tape attached to reduce the thickness; mounting step, grinding one side of the thinned semiconductor wafer (for example, with circuit The surface is on the opposite side) is attached to the adhesive wafer 10, and the semiconductor wafer is fixed to the dicing belt 20 through the wafer adhesive 10; in the extended step, the semiconductor wafer is cut by stretching the dicing belt 20 to produce a semiconductor wafer. The distance between adjacent semiconductor wafers is enlarged; in the pick-up step, the adhesive wafer 10 and the adhesive layer 22 are peeled off, and the semiconductor wafer (Die) is taken out with the adhesive wafer 10 attached. The manufacturing method of the semiconductor device of this embodiment further includes: a die bonding step of bonding the die bonding chip 10 attached to the semiconductor chip to the body to be bonded; a hardening step of hardening the bonding die 10 bonded to the body to be bonded; and wire bonding. The step of electrically connecting the electrodes of the electronic circuit in the semiconductor chip and the connected body through leads; and the sealing step of using thermosetting resin to seal the semiconductor chip and the leads on the connected body.

隱形切割步驟為所謂SDBG(Stealth Dicing Before Grinding，研磨前隱形切割)製程中之步驟。隱形切割步驟中，如圖3A～圖3C所示，於半導體晶圓W之內部形成用於將形成有電路面之圖案晶圓割斷成半導體晶片之脆弱部分。具體而言，首先，於半導體晶圓W之電路面貼附背面研磨帶G(參照圖3A)。繼而，於貼附有背面研磨帶G之狀態下實施基於研削墊K之研削加工(預背面研磨加工)直至半導體晶圓W達到規定厚度(參照圖3B)。然後，對厚度已變薄之半導體晶圓W照射雷射光，藉此於半導體晶圓W之內部形成脆弱部分(參照圖3C)。The stealth cutting step is a step in the so-called SDBG (Stealth Dicing Before Grinding) process. In the stealth cutting step, as shown in FIGS. 3A to 3C , a fragile portion is formed inside the semiconductor wafer W for cutting the patterned wafer on which the circuit surface is formed into the semiconductor wafer. Specifically, first, the back polishing tape G is attached to the circuit surface of the semiconductor wafer W (see FIG. 3A ). Next, with the back polishing tape G attached, grinding processing (preliminary back polishing processing) using the grinding pad K is performed until the semiconductor wafer W reaches a predetermined thickness (see FIG. 3B ). Then, the thinned semiconductor wafer W is irradiated with laser light to form a fragile portion inside the semiconductor wafer W (see FIG. 3C ).

亦可實施半切割步驟代替隱形切割步驟。半切割步驟係所謂DBG(Dicing Before Grinding，研磨前切割)製程中之步驟。 半切割步驟中，為了利用割斷處理將半導體晶圓加工成半導體晶片(Die)而於半導體晶圓形成槽後，對半導體晶圓進行研削而減薄厚度。 具體而言，於半切割步驟中，實施用於將形成有電路面之半導體晶圓割斷成半導體晶片(Die)之半切割加工。更具體而言，於半導體晶圓之與電路面處於相反側之面貼附晶圓加工用帶。以於半導體晶圓上貼附有晶圓加工用帶之狀態，於半導體晶圓形成分割用槽。於形成有槽之面上貼附背面研磨帶，另一方面，將開始貼附之晶圓加工用帶剝離。 A half-cutting step can also be implemented instead of the invisible cutting step. The half-cutting step is a step in the so-called DBG (Dicing Before Grinding) process. In the half-cutting step, in order to process the semiconductor wafer into a semiconductor wafer (Die) by cutting, after forming grooves in the semiconductor wafer, the semiconductor wafer is ground to reduce its thickness. Specifically, in the half-dicing step, a half-dicing process for cutting the semiconductor wafer on which the circuit surface is formed into semiconductor wafers (Dies) is performed. More specifically, a wafer processing tape is attached to the surface of the semiconductor wafer opposite to the circuit surface. With the wafer processing tape attached to the semiconductor wafer, grooves for dividing are formed in the semiconductor wafer. A back polishing tape is attached to the surface on which the groove is formed, and on the other hand, the wafer processing tape initially attached is peeled off.

本實施方式之切晶黏晶膜如上所述，較佳為在用於將半導體晶圓割斷而製造半導體晶片之SDBG(Stealth Dicing Before Grinding)製程或DBG(Dicing Before Grinding)製程中使用。As mentioned above, the die-cut die-bonding film of this embodiment is preferably used in the SDBG (Stealth Dicing Before Grinding) process or DBG (Dicing Before Grinding) process for cutting the semiconductor wafer to manufacture semiconductor wafers.

背面研磨步驟中，如圖3D所示，對貼附有背面研磨帶G之狀態之半導體晶圓W進而實施研削加工，將半導體晶圓W之厚度減薄至藉由其後之割斷處理製作之半導體晶片(Die)之厚度為止。例如，亦可實施研削加工直至達到規定厚度，以使上述經半切割加工之半導體晶圓W不會單片化。若如此實施研削加工，則藉由其後之擴展步驟(尤其是低溫擴展步驟)，於將半導體晶圓W割斷成半導體晶片之同時，亦割斷黏晶片10。另一方面，亦可以實施研削加工直至上述經半切割加工之半導體晶圓W單片化為止。若如此實施研削加工，則於其後之擴展步驟(尤其是低溫擴展步驟)中，例如於擴大相鄰之半導體晶片彼此之間隔之同時，將黏晶片10割斷。In the back grinding step, as shown in FIG. 3D , the semiconductor wafer W with the back grinding tape G attached is further subjected to grinding processing to reduce the thickness of the semiconductor wafer W to the thickness produced by the subsequent cutting process. up to the thickness of the semiconductor wafer (Die). For example, grinding may be performed until a predetermined thickness is reached so that the semiconductor wafer W subjected to half-cut processing is not separated into individual pieces. If the grinding process is performed in this way, through the subsequent expansion step (especially the low-temperature expansion step), the semiconductor wafer W is cut into semiconductor wafers, and the bonding wafer 10 is also cut off. On the other hand, the grinding process may be performed until the half-cut semiconductor wafer W is diced into individual pieces. If the grinding process is performed in this way, in the subsequent expansion step (especially the low-temperature expansion step), for example, the space between adjacent semiconductor wafers is expanded while the bonded wafer 10 is cut.

安裝步驟中，如圖4A～圖4B所示，將半導體晶圓W固定於切晶帶20。詳細而言，於切晶帶20之黏著劑層22安裝切晶環R，並且於露出之黏晶片10之面上貼附如上所述藉由切削加工而使厚度變薄之半導體晶圓W(參照片圖4A)。繼而，自半導體晶圓W剝離背面研磨帶G(參照圖4B)。In the mounting step, as shown in FIGS. 4A and 4B , the semiconductor wafer W is fixed to the dicing belt 20 . Specifically, the dicing ring R is installed on the adhesive layer 22 of the dicing belt 20, and the semiconductor wafer W whose thickness has been reduced by cutting processing as described above is attached to the exposed surface of the wafer adhesive wafer 10 ( See photo 4A). Next, the back polishing tape G is peeled off from the semiconductor wafer W (see FIG. 4B ).

亦可於擴展步驟之前藉由例如雷射光之照射而將黏晶片10割斷。具體而言，於藉由上述切削加工對半導體晶圓W進行單片化之情形時，亦可藉由雷射光之照射，將重疊於使半導體晶圓單片化而成之半導體晶片並且尚未被割斷之黏晶片10切斷。然後，亦可藉由擴展步驟，擴大相鄰之晶片彼此之間隔。The bonded wafer 10 can also be cut by, for example, laser light irradiation before the expansion step. Specifically, when the semiconductor wafer W is singulated by the above-mentioned cutting process, it is also possible to overlay the semiconductor wafer W that has been singulated into pieces by irradiation with laser light and has not yet been The cut-off adhesive wafer 10 is cut off. Then, the distance between adjacent wafers can also be enlarged through an expansion step.

擴展步驟中，如圖5A～圖5C所示，擴大藉由割斷製作之半導體晶片X彼此之間隔。詳細而言，於切晶帶20之黏著劑層22上安裝切晶環R之後，將切晶帶20固定於擴展裝置之保持器H(參照圖5A)。將擴展裝置所具備之頂起構件U自切晶黏晶膜1之下側頂起，藉此將切晶黏晶膜1進行拉伸以於面方向上擴展(參照圖5B)。藉此，於特定之溫度條件下將半導體晶圓W割斷。上述溫度條件例如為-20～0℃，較佳為-15～0℃，更佳為-10～-5℃。藉由使頂起構件U下降而解除擴展狀態(參照圖5C，目前為止為低溫擴展步驟)。 進而，於擴展步驟中，如圖6A～圖6B所示，於更高之溫度條件下(例如10℃～25℃)下對切晶帶20進行拉伸以使面積擴大。藉此，將割斷後相鄰之半導體晶片X於膜面之面方向上拉離，而進一步擴大切口(相鄰之半導體晶片間之相隔距離)(常溫擴展步驟)。 再者，於實施上述DBG製程時，於擴展步驟中，可採用於低溫下將黏晶片10割斷之方式，或者可採用利用雷射光來切割黏晶片10之方式。當利用雷射光切割黏晶片時，有時於切割黏晶片10後進而於低溫下進行擴展步驟。 In the expansion step, as shown in FIGS. 5A to 5C , the distance between the semiconductor wafers X produced by cutting is expanded. Specifically, after the dicing ring R is installed on the adhesive layer 22 of the dicing belt 20, the dicing belt 20 is fixed to the holder H of the expansion device (see FIG. 5A). The lifting member U provided in the expansion device is lifted up from the lower side of the die-cut die-bonding film 1, thereby stretching the die-cut die-bonding film 1 to expand in the surface direction (refer to FIG. 5B). Thereby, the semiconductor wafer W is cut under specific temperature conditions. The above-mentioned temperature conditions are, for example, -20 to 0°C, preferably -15 to 0°C, and more preferably -10 to -5°C. The expansion state is released by lowering the lifting member U (refer to FIG. 5C , so far it is the low-temperature expansion step). Furthermore, in the expansion step, as shown in FIGS. 6A to 6B , the diced ribbon 20 is stretched under higher temperature conditions (for example, 10° C. to 25° C.) to expand the area. Thereby, the cut adjacent semiconductor wafers Furthermore, when implementing the above DBG process, in the expansion step, the die bonding wafer 10 can be cut off at low temperature, or the die bonding wafer 10 can be cut using laser light. When laser light is used to cut the die bonding wafer, sometimes an expansion step is performed at a low temperature after cutting the die bonding wafer 10 .

本實施方式中，切晶帶20因擴展步驟而成為於面方向上被拉伸之狀態。此時，若切晶帶20於小片化之複數個半導體晶片組之周圍未受到加熱處理，則與複數個半導體晶片重疊之部分(中央部分)之切晶帶20會收縮而恢復原本形狀。為了抑制如上所述切晶帶20發生收縮，而於小片化之複數個半導體晶片組之周圍以120℃左右之溫度對切晶帶20進行加熱處理。換言之，以120℃左右之溫度，對與複數個半導體晶片重疊且沿複數個半導體晶片組之外周之部分的切晶帶20進行加熱處理。加熱處理例如如圖7所示，使用能夠沿小片化之複數個半導體晶片組之外周於周方向上移動之加熱器S等來實施。因此，切晶帶20中被加熱處理之部分中能夠同時存在溫度更高之部分及更低之部分。如圖7所示，例如於切晶帶20中被加熱處理且包圍半導體晶片組之外周之帶狀部分可能成為如下狀況，即於長度方向之一側之部分溫度更高，於另一側之部分溫度更低。In this embodiment, the dicing tape 20 is in a state of being stretched in the plane direction due to the expansion step. At this time, if the dicing belt 20 is not heated around the plurality of diced semiconductor wafer groups, the portion (central portion) of the dicing belt 20 overlapping the plurality of semiconductor wafers will shrink and return to its original shape. In order to suppress the shrinkage of the dicing belt 20 as described above, the dicing belt 20 is heated at a temperature of about 120° C. around the plurality of diced semiconductor wafer groups. In other words, the portion of the dicing belt 20 that overlaps the plurality of semiconductor wafers and extends along the outer periphery of the plurality of semiconductor wafer groups is heated at a temperature of approximately 120°C. The heat treatment is performed, for example, as shown in FIG. 7 , using a heater S or the like that can move in the circumferential direction along the outer periphery of a plurality of diced semiconductor chip groups. Therefore, the heat-processed portion of the dicing belt 20 can have a higher temperature portion and a lower temperature portion at the same time. As shown in FIG. 7 , for example, the belt-shaped portion that is heated in the dicing belt 20 and surrounds the outer periphery of the semiconductor wafer group may be in a situation where the temperature is higher on one side in the length direction and the temperature on the other side is higher. Some are cooler.

於拾取步驟之前，例如自基材層21側對重疊於基材層21之黏著劑層22照射紫外線，藉此對黏著劑層22實施硬化處理(硬化處理步驟)。Before the picking-up step, for example, the adhesive layer 22 overlapping the base material layer 21 is irradiated with ultraviolet rays from the base material layer 21 side, thereby hardening the adhesive layer 22 (hardening treatment step).

於拾取步驟中，如圖8所示，將貼附有黏晶片10之狀態之半導體晶片X自切晶帶20之黏著劑層22進行剝離。詳細而言，使頂銷構件P上升，而將拾取對象之半導體晶片X隔著切晶帶20頂起。藉由吸附夾具J保持被頂起之半導體晶片X。In the picking-up step, as shown in FIG. 8 , the semiconductor wafer X with the adhesive wafer 10 attached thereto is peeled off from the adhesive layer 22 of the dicing tape 20 . Specifically, the push pin member P is raised to push up the semiconductor wafer X to be picked up via the dicing belt 20 . The lifted semiconductor wafer X is held by the suction jig J.

於黏晶步驟中，將貼附有黏晶片10之狀態之半導體晶片X接著於被接著體Z。黏晶步驟中，例如如圖9所示，有時將貼附有黏晶片10之狀態之半導體晶片X堆疊複數次。In the bonding step, the semiconductor chip X with the bonding chip 10 attached thereto is bonded to the body Z to be bonded. In the die-bonding step, for example, as shown in FIG. 9 , the semiconductor wafers X with the die-bonding 10 attached thereto may be stacked a plurality of times.

於硬化步驟中，例如於100℃以上且180℃以下之溫度下進行加熱處理，以提高黏晶片10中所包含之上述含交聯性基之丙烯酸聚合物中交聯性基(例如環氧基)之反應活性而進行黏晶片10之硬化。In the hardening step, for example, heat treatment is performed at a temperature above 100°C and below 180°C to increase the crosslinking groups (such as epoxy groups) in the above-mentioned crosslinking group-containing acrylic polymer included in the die bonding chip 10 ) reaction activity to harden the die bonding chip 10 .

於引線接合步驟中，一邊加熱半導體晶片X(Die)與被接著體Z，一邊用引線L進行連接(例如參照圖9)。In the wire bonding step, the semiconductor wafer X (Die) and the adherend Z are connected with a wire L while being heated (for example, see FIG. 9 ).

於密封步驟中，如圖10所示，藉由環氧樹脂等熱固性樹脂M將半導體晶片X與黏晶片10進行密封。密封步驟中，為了使熱固性樹脂M之硬化反應進行，例如於100℃以上且180℃以下之溫度下進行加熱處理。In the sealing step, as shown in FIG. 10 , the semiconductor wafer X and the die bonding wafer 10 are sealed with a thermosetting resin M such as epoxy resin. In the sealing step, in order to advance the curing reaction of the thermosetting resin M, heat treatment is performed at a temperature of 100°C or more and 180°C or less, for example.

再者，於近年來之半導體產業中，隨著積體化技術之進一步發展，強烈希望更薄之半導體晶片(例如20 μm以上且50 μm以下之厚度)、及更薄之黏晶片(例如1 μm以上且40 μm以下、較佳為7 μm以下、更佳為5 μm以下之厚度)。Furthermore, in the semiconductor industry in recent years, with the further development of integration technology, there is a strong desire for thinner semiconductor wafers (for example, a thickness of more than 20 μm and less than 50 μm), and thinner bonding wafers (for example, 1 μm or more and 40 μm or less, preferably 7 μm or less, more preferably 5 μm or less).

於上述半導體裝置之製造方法(切晶黏晶膜之使用方法)中，於擴展步驟(尤其是常溫擴展步驟)中，用較強之力於面方向上進行拉伸，以擴大切晶帶20之面積。又，將切晶帶20拉伸後，藉由將切晶帶20之一部分以120℃左右進行加熱處理而使其收縮。具體而言，將未與小片化之複數個半導體晶片重疊且沿複數個半導體晶片組之外周之部分(外周部分)的切晶帶20如上所述地藉由加熱處理而使其收縮。藉由使上述熱收縮率為6%以上，而使得經上述加熱處理加熱之部分(外周部分)容易收縮。與外周部分容易收縮相應地，與小片化之複數個半導體重疊之部分(中央部分)之切晶帶20之收縮被抑制。換言之，能夠抑制被拉伸且與複數個半導體晶片重疊之部分(中央部分)之切晶帶20向拉伸方向之反方向收縮。因此，能夠抑制小片化之複數個半導體晶片之間隔變窄。 與此相對，假如不控制切晶帶20於120℃下之熱收縮性，例如切晶帶20幾乎不因熱處理而發生熱收縮時，切晶帶20之中央部分較容易收縮，因此小片化之複數個半導體晶片之間隔變窄。因此，可能難以於擴展步驟後使半導體晶片間之切口充分隔開。 本實施方式之切晶黏晶膜中，切晶帶20於120℃下之熱收縮率為6%以上，因此如上所述，能夠於擴展步驟後使半導體晶片間之切口充分隔開。 In the above-mentioned manufacturing method of a semiconductor device (method of using die-cut die-bonding film), in the expansion step (especially the room-temperature expansion step), a strong force is used to stretch in the surface direction to expand the die-cutting tape 20 area. In addition, after the dicing belt 20 is stretched, a part of the dicing belt 20 is heated at about 120° C. to shrink it. Specifically, the portion (outer peripheral portion) of the dicing belt 20 that is not overlapped with the plurality of diced semiconductor wafers and is along the outer periphery of the plurality of semiconductor wafer groups is shrunk by heat treatment as described above. By setting the thermal shrinkage rate to 6% or more, the portion heated by the heat treatment (outer peripheral portion) can easily shrink. While the outer peripheral portion easily shrinks, the shrinkage of the dicing belt 20 in the portion (central portion) overlapping the plurality of diced semiconductors is suppressed. In other words, it is possible to suppress the shrinkage of the dicing tape 20 in the portion (central portion) that is stretched and overlaps the plurality of semiconductor wafers in the direction opposite to the stretching direction. Therefore, it is possible to suppress the narrowing of the intervals between the plurality of semiconductor wafers in chip reduction. In contrast, if the thermal shrinkage of the dicing belt 20 at 120°C is not controlled, for example, if the dicing belt 20 hardly undergoes thermal shrinkage due to heat treatment, the central part of the dicing belt 20 will shrink more easily, so it will be reduced into smaller pieces. The distance between the plurality of semiconductor wafers becomes narrower. Therefore, it may be difficult to sufficiently space the slits between the semiconductor wafers after the expansion step. In the die-cut die-bonding film of this embodiment, the heat shrinkage rate of the die-cut tape 20 at 120°C is more than 6%. Therefore, as mentioned above, the slits between the semiconductor wafers can be sufficiently separated after the expansion step.

又，如上所述對切晶帶20進行之加熱處理例如如圖7所示，藉由使加熱器等沿小片化之複數個半導體晶片組之外周進行移動而實施。具體而言，沿複數個半導體晶片組之外周，分別移動2個加熱器等半周。於此種加熱處理方法中，於被加熱之部分中存在最初被加熱之部位與最後被加熱之部位。因此，於最初被加熱之部位與最後被加熱之部位產生溫度差。換言之，最初被加熱之部位之溫度於加熱器等離開期間逐漸被冷卻，因此於加熱處理結束時變得比最後被加熱之部位之溫度低。通常，溫度越高則材料之彈性模數越小，因此於冷卻前之例如120℃左右之高溫部分之彈性模數可能變得遠小於得到冷卻之部分的彈性模數。因此，於彈性模數因高溫而減小之切晶帶20之高溫部分，可能並不一定可充分抑制切晶帶20向拉伸方向之反方向收縮之力。另一方面，切晶帶20之冷卻部分之彈性模數高，因此能夠充分抑制上述收縮之力。於此種狀態下，與複數個半導體晶片組重疊之部分之切晶帶20容易不均勻地收縮。因此，暫時擴大之複數個半導體晶片組中之切口有可能不均一。 與此相對，本實施方式之切晶黏晶膜中，切晶帶20於120℃下之彈性模數為0.10 MPa以上，於120℃這一高溫下彈性模數亦較高，因此能夠充分抑制如上所述切晶帶20企圖收縮之力。120℃這一溫度接近於例如對於擴展步驟中被拉伸之切晶帶20之一部分如上所述地進行加熱處理而使其收縮時的溫度。此時之加熱處理如上所述，例如藉由利用加熱器等依次對沿小片化之複數個半導體晶片組之外周之應當加熱的部分進行加熱而實施。因此，受到加熱而溫度升高之部分與加熱後溫度降低之部分混合存在。於該狀況下，對於本實施方式之切晶帶20而言，由於高溫部位(例如120℃之部分)之彈性模數較高，故而於低溫部位及高溫部位均可充分抑制如上所述切晶帶20要收縮之力。因此，能夠抑制於與複數個半導體晶片組重疊之切晶帶20之中央部分，收縮力因部位而不均一。因此，能夠抑制擴展步驟後切口因部位而不均一。 In addition, the heat treatment of the dicing belt 20 as described above is performed by moving a heater or the like along the outer periphery of a plurality of diced semiconductor wafer groups, as shown in FIG. 7 , for example. Specifically, two heaters are moved half a revolution along the outer periphery of the plurality of semiconductor wafer groups. In this heat treatment method, among the parts to be heated, there are a first-heated part and a last-heated part. Therefore, a temperature difference occurs between the first heated part and the last heated part. In other words, the temperature of the initially heated portion is gradually cooled while the heater etc. is removed, and therefore becomes lower than the temperature of the last heated portion at the end of the heating process. Generally, the higher the temperature, the smaller the elastic modulus of the material. Therefore, the elastic modulus of the high-temperature part before cooling, for example around 120°C, may become much smaller than the elastic modulus of the cooled part. Therefore, in the high-temperature portion of the dicing belt 20 where the elastic modulus is reduced due to high temperature, the force of shrinkage of the dicing belt 20 in the opposite direction to the stretching direction may not necessarily be fully suppressed. On the other hand, the cooling portion of the dicing belt 20 has a high elastic modulus, so the shrinkage force can be sufficiently suppressed. In this state, the portion of the dicing tape 20 overlapping the plurality of semiconductor chip groups tends to shrink unevenly. Therefore, the cuts in the temporarily enlarged plurality of semiconductor chip groups may be non-uniform. In contrast, in the die-cut die-bonding film of this embodiment, the elastic modulus of the die-cut tape 20 at 120°C is 0.10 MPa or more, and the elastic modulus at a high temperature of 120°C is also high, so it can fully suppress As mentioned above, the cutting belt 20 attempts to shrink. The temperature of 120° C. is close to the temperature when, for example, a part of the diced ribbon 20 stretched in the expansion step is subjected to heat treatment to shrink as described above. The heat treatment at this time is performed as described above, for example, by sequentially heating the portions to be heated along the outer periphery of the plurality of diced semiconductor wafer groups using a heater or the like. Therefore, the part which has been heated and whose temperature has risen is mixed with the part which has been heated and whose temperature has dropped. In this case, the dicing belt 20 of this embodiment has a higher elastic modulus in the high-temperature portion (for example, the 120° C. portion), so the dicing as described above can be sufficiently suppressed in both the low-temperature portion and the high-temperature portion. The belt 20 needs to be contracted. Therefore, it is possible to suppress the shrinkage force from becoming uneven depending on the location in the central portion of the dicing belt 20 that overlaps the plurality of semiconductor wafer groups. Therefore, it is possible to suppress unevenness of the incision depending on the location after the expansion step.

本實施方式之切晶黏晶膜如上述例示所示，但本發明不限定於上述例示之切晶黏晶膜。 即，於不損害本發明之效果之範圍內，可採用通常之切晶黏晶膜中所使用之各種形態。 The die-cut die-bonding film of this embodiment is as shown in the above-mentioned examples, but the present invention is not limited to the die-cut die-bonding film illustrated above. That is, various forms used in ordinary die-cut die-bonding films can be adopted within the scope that does not impair the effects of the present invention.

由本說明書所揭示之事項包括以下者。 (1) 一種切晶黏晶膜，其具備：切晶帶，其具有基材層及重疊於該基材層之黏著劑層；及黏晶片，其重疊於該切晶帶， 上述切晶帶於120℃下之彈性模數為0.10 MPa以上，上述切晶帶於120℃下之熱收縮率為6%以上。 根據該構成之切晶黏晶膜，能夠於擴展步驟後使半導體晶片間之切口充分隔開，及能夠抑制切口因部位而不均一。 (2) 如上述(1)記載之切晶黏晶膜，其中上述基材層包含乙烯-乙酸乙烯酯共聚樹脂及聚丙烯樹脂。 (3) 如上述(1)或(2)記載之切晶黏晶膜，其中上述基材層由複數個層構成。 (4) 如上述(3)記載之切晶黏晶膜，其中上述基材層由3層以上構成。 (5) 如上述(4)記載之切晶黏晶膜，其中上述基材層由第1基材層、第2基材層及第3基材層堆疊而成之3層構成， 分別配置於上述基材層之一表面側及另一表面側之第1基材層及第3基材層均包含聚丙烯樹脂，配置於上述第1基材層及上述第3基材層之間之第2基材層包含乙烯-乙酸乙烯酯共聚樹脂。 (6) 如上述(5)記載之切晶黏晶膜，其中上述第1基材層及上述第3基材層中之至少一者進而包含抗靜電劑。 (7) 如上述(6)記載之切晶黏晶膜，其中上述抗靜電劑為選自由聚烯烴-聚乙二醇共聚物、聚烯烴-聚醯胺共聚物、聚乙二醇-聚醯胺共聚物、聚乙二醇-(甲基)丙烯酸酯共聚物、聚乙二醇-表氯醇共聚物、離子聚合物、及聚合物與離子性化合物(例如鋰鹽等金屬鹽)之混合物所組成之群中之至少1種。 (8) 如上述(5)～(7)中任一項記載之切晶黏晶膜，其中上述第1基材層及上述第3基材層各自獨立地具有1 μm以上且15 μm以下之厚度，上述第2基材層具有70 μm以上且120 μm以下之厚度。 (9) 如上述(3)～(8)中任一項記載之切晶黏晶膜，其中於構成上述基材層之複數個層之面中距離上述黏著劑層最遠之面的表面電阻率為1.00×10 ⁹[Ω/sq.]以上且1.00×10 ¹²[Ω/sq.]以下。 (10) 如上述(1)～(9)中任一項記載之切晶黏晶膜，其中上述黏著劑層包含丙烯酸系共聚物、異氰酸酯化合物及聚合起始劑。 (11) 如上述(1)～(10)中任一項記載之切晶黏晶膜，其中上述黏晶片包含：含交聯性基之丙烯酸聚合物、熱固性樹脂及填料，上述含交聯性基之丙烯酸聚合物於分子中具有藉由熱硬化處理而發生交聯反應之交聯性基。 實施例 Matters disclosed in this manual include the following. (1) A die-cutting adhesive film, which is provided with: a die-cutting tape having a base material layer and an adhesive layer overlapping the base material layer; and a die-cutting tape overlapping the die-cutting tape, the die-cutting tape being The elastic modulus at 120°C is above 0.10 MPa, and the thermal shrinkage rate of the above-mentioned cut strip at 120°C is above 6%. The die-cut die-bonding film with this structure can sufficiently separate the incisions between the semiconductor wafers after the expansion step, and can suppress unevenness of the incisions depending on the location. (2) The die-cut die-bonding film as described in (1) above, wherein the base material layer includes ethylene-vinyl acetate copolymer resin and polypropylene resin. (3) The die-cut die-bonding film according to the above (1) or (2), wherein the above-mentioned base material layer is composed of a plurality of layers. (4) The die-cut die-bonding film according to the above (3), wherein the above-mentioned base material layer is composed of three or more layers. (5) The die-cut die-bonding film as described in the above (4), wherein the above-mentioned base material layer is composed of three layers stacked together: a first base material layer, a second base material layer and a third base material layer, respectively arranged on The first base material layer and the third base material layer on one surface side and the other surface side of the above-mentioned base material layer both contain polypropylene resin, and are arranged between the above-mentioned first base material layer and the above-mentioned third base material layer. 2. The base material layer contains ethylene-vinyl acetate copolymer resin. (6) The die-cut die-bonding film according to the above (5), wherein at least one of the above-mentioned first base material layer and the above-mentioned third base material layer further contains an antistatic agent. (7) The die-cut die-bonding film as described in the above (6), wherein the antistatic agent is selected from the group consisting of polyolefin-polyethylene glycol copolymer, polyolefin-polyamide copolymer, polyethylene glycol-polyamide Amine copolymers, polyethylene glycol-(meth)acrylate copolymers, polyethylene glycol-epichlorohydrin copolymers, ionic polymers, and mixtures of polymers and ionic compounds (such as metal salts such as lithium salts) At least one of the groups formed. (8) The die-cut die-bonding film according to any one of the above (5) to (7), wherein the above-mentioned first base material layer and the above-mentioned third base material layer each independently have a thickness of 1 μm or more and 15 μm or less. The thickness of the second base material layer is 70 μm or more and 120 μm or less. (9) The die-cut die-bonding film according to any one of the above (3) to (8), wherein the surface resistance of the surface farthest from the adhesive layer among the surfaces of the plurality of layers constituting the above-mentioned base material layer The rate is 1.00×10 ⁹ [Ω/sq.] or more and 1.00×10 ¹² [Ω/sq.] or less. (10) The die-cut die-bonding film according to any one of the above (1) to (9), wherein the adhesive layer contains an acrylic copolymer, an isocyanate compound and a polymerization initiator. (11) The die-cut die-bonding film as described in any one of the above (1) to (10), wherein the die-bonding film includes: an acrylic polymer containing a cross-linkable group, a thermosetting resin and a filler, and the above-mentioned die-bonding film contains a cross-linkable group. The acrylic polymer has a cross-linking group in the molecule that undergoes a cross-linking reaction through thermal hardening treatment. Example

繼而，藉由實驗例對本發明進一步詳細地進行說明，但本發明不限定於其等。Next, the present invention will be explained in further detail using experimental examples, but the present invention is not limited to these.

以如下方式製造切晶帶。又，使該切晶帶與黏晶片貼合而製造切晶黏晶膜。Cutting ribbons were produced in the following manner. Furthermore, the die-cutting tape and the die-bonding wafer are bonded together to produce a die-cutting die-bonding film.

＜切晶帶之製作＞ [黏著劑層] (丙烯酸系共聚物之原料單體) •丙烯酸2-羥基乙酯(HEA)：20質量份 •丙烯酸2-乙基己酯(2EHA)：100質量份 ＜Preparation of cutting tape＞ [Adhesive layer] (raw material monomer for acrylic copolymer) •2-hydroxyethyl acrylate (HEA): 20 parts by mass •2-ethylhexyl acrylate (2EHA): 100 parts by mass

於具備冷凝管、氮氣導入管、溫度計及攪拌裝置之反應容器中投入上述各原料。相對於單體之合計100質量份，使用偶氮二異丁腈(AIBN)0.2重量份作為熱聚合起始劑。以全部單體之濃度達到規定濃度(例如35質量%)之方式加入乙酸乙酯作為反應溶劑。於氮氣氣流中在62℃下進行規定時間(例如3小時)之聚合反應處理，進而在75℃下進行規定時間(例如4小時)之聚合反應處理，得到丙烯酸系共聚物之中間體。 於各實施例及各比較例中，聚合時之單體濃度、聚合時間分別如表2所示。 Put the above-mentioned raw materials into a reaction vessel equipped with a condenser tube, a nitrogen introduction tube, a thermometer and a stirring device. As a thermal polymerization initiator, 0.2 parts by weight of azobisisobutyronitrile (AIBN) was used with respect to 100 parts by weight of the total monomers. Ethyl acetate is added as the reaction solvent until the concentration of all monomers reaches a specified concentration (for example, 35% by mass). Polymerization treatment is performed at 62°C for a predetermined time (for example, 3 hours) in a nitrogen stream, and further at 75°C for a predetermined time (for example, 4 hours), to obtain an intermediate of an acrylic copolymer. In each example and each comparative example, the monomer concentration and polymerization time during polymerization are shown in Table 2.

於包含如上所述製備之丙烯酸系共聚物之中間物之液體中，以相對於HEA之合計，按莫耳換算計達到80莫耳%之方式加入異氰酸2-甲基丙烯醯氧基乙酯(以下，亦稱為MOI)。又，添加相對於MOI添加量為0.03質量%之二月桂酸二丁基錫作為反應觸媒。然後，於空氣氣流中以50℃進行12小時加成反應處理(胺基甲酸酯化反應處理)，得到丙烯酸系共聚物。 繼而，相對於丙烯酸系共聚物100質量份，加入下述調配成分，製備黏著劑溶液。 ・光聚合起始劑：2.5質量份 (製品名「Omnirad127D」、IGM公司製造) ・多異氰酸酯化合物：0.75質量份 (製品名「TakenateD-101E」、三井化學公司製造) ・抗氧化劑：0.01質量份 (製品名「Irganox1010」、BASF Japan公司製造) 將如上所述製備之黏著劑溶液塗佈於實施了聚矽氧處理之PET剝離襯墊之處理面上，於120℃下加熱乾燥2分鐘，形成厚度10 μm之黏著劑層。 To the liquid containing the intermediate of the acrylic copolymer prepared as described above, 2-methacryloxyethyl isocyanate was added in such a manner that it reached 80 mol% based on the total amount of HEA. Ester (hereinafter also referred to as MOI). Furthermore, dibutyltin dilaurate was added as a reaction catalyst in an amount of 0.03% by mass relative to the MOI. Then, addition reaction treatment (urethanation reaction treatment) was performed at 50° C. for 12 hours in an air flow to obtain an acrylic copolymer. Next, the following preparation components were added to 100 parts by mass of the acrylic copolymer to prepare an adhesive solution. ・Photopolymerization initiator: 2.5 parts by mass (Product name "Omnirad127D", manufactured by IGM) ・Polyisocyanate compound: 0.75 parts by mass (Product name "TakenateD-101E", manufactured by Mitsui Chemicals Co., Ltd.) ・Antioxidant: 0.01 parts by mass (Product name "Irganox1010", manufactured by BASF Japan) The adhesive solution prepared as above was applied to the treated surface of the polysiloxane-treated PET release liner, and heated and dried at 120°C for 2 minutes to form an adhesive layer with a thickness of 10 μm.

[基材層] 使用以下所示之製品作為原料，按照表1及表2各自示出之調配組成製作積層3層或2層而成之基材層、或者單層之基材層。再者，關於單層之基材層之組成，記載於第1基材層之欄中。 (聚烯烴系樹脂) ・PO-1：製品名「Wintek WXK1233」(日本聚丙烯公司製造) 聚烯烴系樹脂(茂金屬系聚丙烯樹脂) ・PO-2：製品名「Vistamaxx3980FL」(ExxonMobil Chemical公司製造) 聚烯烴系樹脂(丙烯系彈性體樹脂、乙烯含有率9%) ・PO-3：製品名「Zelas5053YT13」(三菱化學公司製造) 聚烯烴系樹脂(烯烴系熱塑性彈性體樹脂) ・PO-4：製品名「ZelasZT536」(三菱化學公司製造) 聚烯烴系樹脂(烯烴系熱塑性彈性體樹脂) (乙烯-乙酸乙烯酯樹脂) ・EVA-1：製品名「EVAFLEX P1007」(Mitsui-Dow Polychemical公司製造) 乙烯-乙酸乙烯酯共聚樹脂(含有乙酸乙烯酯10質量%) ・EVA-2：製品名「Ultrathene 626」(東曹公司製造) 乙烯-乙酸乙烯酯共聚樹脂(含有乙酸乙烯酯15質量%) ・EVA-3：製品名「EVAFLEX V1030」(Mitsui-Dow Polychemical公司製造) 乙烯-乙酸乙烯酯共聚樹脂(含有乙酸乙烯酯10質量%) ・EVA-4：乙烯-乙酸乙烯酯共聚樹脂(Mitsui-Dow Polychemicall公司製造) (低密度聚乙烯樹脂) ・PE：製品名「Sumikasen F723-P」(住友化學公司製造) (離子聚合物樹脂) ・IO：Mitsui-Dow Polychemical公司製造 (聚胺基甲酸酯樹脂) ・PU：BASF公司製造 (抗靜電劑) ・AS：製品名「PELESTAT 230」(三洋化成公司製造) [Substrate layer] Using the products shown below as raw materials, a base material layer in which three or two layers are laminated, or a single layer base material layer is produced according to the formulation compositions shown in Table 1 and Table 2 respectively. In addition, the composition of the single-layer base material layer is described in the column of the first base material layer. (polyolefin resin) ・PO-1: Product name "Wintek WXK1233" (manufactured by Nippon Polypropylene Co., Ltd.) Polyolefin resin (metallocene polypropylene resin) ・PO-2: Product name "Vistamaxx3980FL" (manufactured by ExxonMobil Chemical Co., Ltd.) Polyolefin resin (propylene elastomer resin, ethylene content: 9%) ・PO-3: Product name "Zelas5053YT13" (manufactured by Mitsubishi Chemical Corporation) Polyolefin resin (olefin thermoplastic elastomer resin) ・PO-4: Product name "ZelasZT536" (manufactured by Mitsubishi Chemical Corporation) Polyolefin resin (olefin thermoplastic elastomer resin) (ethylene-vinyl acetate resin) ・EVA-1: Product name "EVAFLEX P1007" (manufactured by Mitsui-Dow Polychemical Co., Ltd.) Ethylene-vinyl acetate copolymer resin (contains 10% by mass of vinyl acetate) ・EVA-2: Product name "Ultrathene 626" (manufactured by Tosoh Corporation) Ethylene-vinyl acetate copolymer resin (contains 15% by mass of vinyl acetate) ・EVA-3: Product name "EVAFLEX V1030" (manufactured by Mitsui-Dow Polychemical Co., Ltd.) Ethylene-vinyl acetate copolymer resin (contains 10% by mass of vinyl acetate) ・EVA-4: Ethylene-vinyl acetate copolymer resin (manufactured by Mitsui-Dow Polychemicall Co., Ltd.) (low density polyethylene resin) ・PE: Product name "Sumikasen F723-P" (manufactured by Sumitomo Chemical Co., Ltd.) (ionopolymer resin) ・IO: Made by Mitsui-Dow Polychemical Co., Ltd. (polyurethane resin) ・PU: Made by BASF Corporation (antistatic agent) ・AS: Product name "PELESTAT 230" (manufactured by Sanyo Chemical Co., Ltd.)

聚烯烴-聚乙二醇共聚物 [表1] 構成基材層之各層之組成及厚度    實施例1 實施例2 實施例3 比較例1 第一基材層 (黏著劑層側) PO-1[80質量%] ＋ AS[20質量%] ＜9 μm＞ PO-1[90質量%] ＋ AS[10質量%] ＜8 μm＞ PO-2[56質量%] ＋ EVA-1[24質量%] ＋ AS[20質量%] ＜10 μm＞ EVA-3 [100質量%] ＜125 μm＞ 第2基材層 PO-2[70質量%] ＋ EVA-1[30質量%] ＜92 μm＞ EVA-2[100質量%] ＜84 μm＞ PO-2[70質量%] ＋ EVA-1[30質量%] ＜100 μm＞ - 第3基材層 (帶背面側) PO-1[80質量%] ＋ AS[20質量%] ＜9 μm＞ PO-1[90質量%] ＋ AS[10質量%] ＜8 μm＞ PO-2[56質量%] ＋ EVA-1[24質量] ＋ AS[20質量%] ＜10 μm＞ - Polyolefin-polyethylene glycol copolymer [Table 1] Composition and thickness of each layer constituting the base material layer Example 1 Example 2 Example 3 Comparative example 1 First base material layer (adhesive layer side) PO-1[80 mass%] + AS[20 mass%] <9 μm> PO-1[90 mass%] + AS[10 mass%] <8 μm> PO-2[56 mass%] + EVA-1 [24 mass%] + AS [20 mass%] ＜10 μm＞ EVA-3 [100 mass%] <125 μm> 2nd base material layer PO-2[70 mass%] + EVA-1[30 mass%] ＜92 μm＞ EVA-2[100 mass%] <84 μm> PO-2[70 mass%] + EVA-1[30 mass%] <100 μm> - 3rd base material layer (with back side) PO-1[80 mass%] + AS[20 mass%] <9 μm> PO-1[90 mass%] + AS[10 mass%] <8 μm> PO-2[56 mass%] + EVA-1 [24 mass] + AS [20 mass%] ＜10 μm＞ -

[表2] 構成基材層之各層之組成及厚度    比較例2 比較例3 比較例4 比較例5 第一基材層 (黏著劑層側) PO-3[100質量%] ＜32 μm＞ PO-4[100質量%] ＜65 μm＞ IO[100質量%] ＜12.5 μm＞ IO[100質量%] ＜25 μm＞ 第2基材層 PE[100質量%] ＜40 μm＞ PE[100質量%] ＜35 μm＞ PU[100質量%] ＜75 μm＞ EVA-4 [100質量%] ＜50μm＞ 第3基材層 (帶背面側) PE ＋ AS[20質量%] ＜8 μm＞ - IO[100質量%] ＜12.5 μm＞ IO[100質量%] ＜25 μm＞ [Table 2] Composition and thickness of each layer constituting the base material layer Comparative example 2 Comparative example 3 Comparative example 4 Comparative example 5 First base material layer (adhesive layer side) PO-3[100 mass%] ＜32 μm＞ PO-4[100 mass%] ＜65 μm＞ IO[100 mass%] ＜12.5 μm＞ IO[100 mass%] ＜25 μm＞ 2nd base material layer PE[100 mass%] ＜40 μm＞ PE[100 mass%] ＜35 μm＞ PU[100 mass%] ＜75 μm＞ EVA-4 [100 mass%] <50μm> 3rd base material layer (with back side) PE + AS[20 mass%] <8 μm> - IO[100 mass%] ＜12.5 μm＞ IO[100 mass%] ＜25 μm＞

(基材層之成形) 使用擠出T模成形機對基材層進行成形。擠出溫度為190℃。對於2層型或3層積層型之基材層，自T模共擠出成形而一體化。一體化之基材層(積層體)充分固化後，將基材層捲取成卷狀並保管。 再者，構成基材層之各層之厚度分別如表1及表2所示。 (Forming of base material layer) The base material layer is formed using an extrusion T-die molding machine. The extrusion temperature is 190°C. For the 2-layer type or 3-layer laminated type, the base material layer is co-extruded from the T-die and integrated. After the integrated base material layer (laminated body) is fully cured, the base material layer is rolled into a roll and stored. Furthermore, the thickness of each layer constituting the base material layer is shown in Table 1 and Table 2 respectively.

[黏著劑層與基材層之貼合] 繼而，將如上所述分別製作之黏著劑層與基材層貼合，於50℃下保存24小時，製造切晶帶。 [Lamination of adhesive layer and base material layer] Then, the adhesive layer and the base material layer respectively prepared as above were bonded together, and stored at 50° C. for 24 hours to produce a dicing belt.

＜黏晶片之製作＞ ・丙烯酸聚合物：100質量份 (製品名「PARACRON KG-8001」、質量平均分子量：1,200,000、玻璃轉移溫度Tg：9℃、含有環氧基、根上工業公司製造) ・酚樹脂：3質量份 (製品名「MEHC-7851SS」、23℃下為固體、明和化成公司製造) ・二氧化矽填料：10質量份 (製品名「SE2050-MCV」、平均粒徑500 nm、Admatechs公司製造) 將上述各原料加入至規定量之甲乙酮中並加以混合，製備總固形物成分濃度12質量%之接著劑組合物溶液。繼而，使用塗抹器，於具有實施了聚矽氧脫模處理之面之PET剝離襯墊的聚矽氧脫模處理面上塗佈接著劑組合物，而形成塗膜。對該塗膜以130℃實施2分鐘之加熱乾燥，於PET剝離襯墊上製作厚度10 μm之黏晶片。 ＜Preparation of chip bonding＞ ・Acrylic polymer: 100 parts by mass (Product name "PARACRON KG-8001", mass average molecular weight: 1,200,000, glass transition temperature Tg: 9°C, contains epoxy group, manufactured by Negami Industrial Co., Ltd.) ・Phenol resin: 3 parts by mass (Product name "MEHC-7851SS", solid at 23°C, manufactured by Meiwa Chemical Co., Ltd.) ・Silica filler: 10 parts by mass (Product name "SE2050-MCV", average particle size 500 nm, manufactured by Admatechs) Each of the above raw materials was added to a predetermined amount of methyl ethyl ketone and mixed to prepare an adhesive composition solution with a total solid content concentration of 12% by mass. Next, using an applicator, the adhesive composition is applied to the silicone release-treated surface of the PET release liner having the silicone release-treated surface to form a coating film. The coating film was heated and dried at 130°C for 2 minutes, and a 10 μm thick die bonding wafer was produced on a PET release liner.

(實施例1～3、比較例1～5) [切晶黏晶膜之製造] 將黏晶片之基材層之各構成示於表1及表2。將黏晶片沖裁成直徑330 mm之圓形狀，製作圓形狀之黏晶片。於室溫下，使用層壓機，將圓形狀之黏晶片與切晶帶貼合，藉此製造切晶黏晶膜。 (Examples 1 to 3, Comparative Examples 1 to 5) [Manufacture of cut crystal adhesive film] Table 1 and Table 2 show the respective compositions of the base material layer for die bonding. The die bonding wafer is punched into a circular shape with a diameter of 330 mm to produce a round die bonding wafer. At room temperature, a laminator is used to laminate the circular die-bonding wafer and the die-cutting tape to produce a die-cutting die-bonding film.

＜切晶帶之物性測定＞ 針對各實施例及各比較例之切晶黏晶膜之切晶帶，如以下方式測定各物性。 ＜Measurement of physical properties of cut crystal ribbon＞ The physical properties of the die-cut bands of the die-cut die-bonding films of each Example and each Comparative Example were measured in the following manner.

[120℃下之彈性模數] 切晶帶之彈性模數(拉伸彈性模數)之測定方法之詳情如上所述。將40℃及120℃下之各彈性模數之測定結果示於表3。 [Elastic modulus at 120℃] The details of the method for measuring the elastic modulus (tensile elastic modulus) of the cut ribbon are as described above. Table 3 shows the measurement results of each elastic modulus at 40°C and 120°C.

[120℃下之熱收縮率] 切晶帶之120℃下之熱收縮率之測定方法之詳情如上所述。將熱收縮率之測定結果示於表3。 [Thermal shrinkage rate at 120℃] The details of the method for measuring the thermal shrinkage rate of the cut ribbon at 120°C are as described above. Table 3 shows the measurement results of thermal shrinkage.

將各實施例及各比較例中之黏晶片之組成及物性示於表3。Table 3 shows the composition and physical properties of the die bonding wafers in each embodiment and each comparative example.

[表3]    實施例1 實施例2 實施例3 比較例1 比較例2 比較例3 比較例4 比較例5 切晶帶物性 120℃彈性模數[MPa] 0.33 0.21 0.19 0.07 0.57 0.26 0.61 0.72 40℃彈性模數[MPa] 54.5 38.4 36.5 32.4 69.5 32.9 42.2 48.2 120℃熱收縮率[%] 7 16 14 65 3 5 1 5 切晶黏晶膜之性能評價 切口不均一抑制 良好 良好 良好 不良 良好 良好 無法評價 良好 切口 良好 38 μm 良好 45 μm 良好 48 μm 尤其良好 64 μm 不良 11 μm 不良 12 μm 不良 7 μm 不良 14 μm [table 3] Example 1 Example 2 Example 3 Comparative example 1 Comparative example 2 Comparative example 3 Comparative example 4 Comparative example 5 Cutting strip physical properties 120℃ elastic modulus [MPa] 0.33 0.21 0.19 0.07 0.57 0.26 0.61 0.72 40℃ elastic modulus [MPa] 54.5 38.4 36.5 32.4 69.5 32.9 42.2 48.2 Thermal shrinkage rate at 120℃[%] 7 16 14 65 3 5 1 5 Performance evaluation of cut and adhered crystal films Inhomogeneous suppression of cuts good good good bad good good Unable to rate good incision Good 38 μm Good 45 μm Good 48 μm Especially good 64 μm Bad 11 μm Bad 12 μm Bad 7 μm Bad 14 μm

以如下方式操作，對如上所述製造之切晶黏晶膜之性能進行評價。The performance of the die-cut die-bonding film produced as described above was evaluated in the following manner.

＜性能評價(相鄰之半導體晶片間之相隔距離(切口))＞ (評價用樣品之準備) 作為評價用樣品，準備使用裸晶圓製作之帶晶片(Die)之切晶黏晶膜。 具體而言，使用層壓機，將保持於晶圓加工用帶(製品名「UB-3083D」、日東電工公司製造)之裸晶圓貼合於切晶黏晶膜之黏晶片。繼而，自晶圓將晶圓加工用帶剝離。貼合時之條件為：貼合速度為10 mm/秒、溫度條件為50～80℃、壓力條件為0.15 MPa。 (晶圓之準備) 首先，於裸晶圓(直徑12英吋，厚度780 μm，東京化工公司製造)中預定形成改性區域之第1面貼合晶圓加工用帶(製品名「UB-3083D」、日東電工公司製造)。繼而，使用隱形切割裝置(製品名「DAL7360(SDE05)」、Power：0.25 W，頻率：80 kHz、Disco公司製造)，於該裸晶圓之內部形成改性區域。詳細而言，自與第1面相反之背面(第2面)側照射聚焦在晶圓內部之靠近第1面之一側的雷射光。照射係沿用於分割裸晶圓之預定線來實施。藉此，藉由基於多光子吸收之剝蝕，於晶圓內部(距離晶圓之第1面之深度為50 μm)以描繪每個區間3 mm×7 mm之格子之方式形成小片化用之改性區域。然後，使用背面研磨裝置(製品名「DGP8760」、Disco公司製造)自晶圓之第2面進行研削，將該晶圓減薄至厚度30 μm。如上所述地形成保持於晶圓加工用帶之狀態之晶圓。該晶圓包含用於將晶圓小片化成複數個晶片(3 mm×7 mm)之區間。 (晶片(Die)之製作) 將如上所述地製作之裸晶圓貼附於切晶黏晶膜。藉由擴展步驟將貼附於切晶黏晶膜之狀態之裸晶圓割斷並小片化。再者，以自裸晶圓剝離了上述晶圓加工用帶之狀態，使用晶片分割裝置(製品名「Die Separator DDS2300」、Disco公司製造)實施擴展步驟。又，擴展步驟中，實施冷擴展後，實施常溫擴展。 冷擴展係以如下方式來實施。具體而言，於貼附於裸晶圓之切晶黏晶膜之黏著劑層上預定貼合框之區域，於室溫下貼附直徑12英吋之SUS製環狀框(Disco公司製造)。繼而，將貼附有SUS製環狀框之裸晶圓安裝於晶片分割裝置。然後，利用冷擴展單元，以擴展溫度-15℃、擴展速度100 mm/秒、擴展量10 mm之條件將晶圓及黏晶片割斷，得到複數個帶黏晶片層之晶片。 進而，於室溫環境下以擴展速度1 mm/秒、擴展量10 mm之條件進行常溫擴展。 然後，在維持擴展狀態之情況下，以加熱溫度250℃、加熱距離20 mm、轉速3°/sec之條件，利用加熱器，使包圍晶圓之外周緣之部分之切晶帶發生熱收縮。即，藉由如圖7所示之加熱處理方法，對未與複數個半導體晶片組重疊之部分之切晶帶實施加熱處理，使經加熱處理之部分發生熱收縮。 熱收縮後，藉由顯微鏡觀察，於複數個部位測定帶黏晶片之晶片間之間隔(切口)。切口係藉由測定任意10個部位處之間隔並將測定值進行算術平均而求出。將切口(平均值)為15 μm以上之情況評價為「良好」，將為50 μm以上之情況評價為「尤其良好」，將未達15 μm之情況評價為「不良」。 ＜Performance evaluation (distance between adjacent semiconductor wafers (notch))＞ (Preparation of samples for evaluation) As a sample for evaluation, a die-attached die-attach film produced using a bare wafer was prepared. Specifically, a laminator is used to laminate a bare wafer held on a wafer processing tape (product name "UB-3083D", manufactured by Nitto Denko Co., Ltd.) to a die-bonded wafer with a die-cut die-bonding film. Then, the wafer processing tape is peeled off from the wafer. The conditions for bonding are: the bonding speed is 10 mm/second, the temperature condition is 50~80°C, and the pressure condition is 0.15 MPa. (Wafer preparation) First, a first-side wafer processing tape (product name "UB-3083D", Nitto Denko Co., Ltd.) to form a modified region on a bare wafer (diameter: 12 inches, thickness: 780 μm, manufactured by Tokyo Chemical Industry Co., Ltd.) manufacturing). Then, a stealth cutting device (product name "DAL7360 (SDE05)", Power: 0.25 W, frequency: 80 kHz, manufactured by Disco Corporation) was used to form a modified area inside the bare wafer. Specifically, laser light focused on the side close to the first surface inside the wafer is irradiated from the back surface (second surface) side opposite to the first surface. Irradiation is performed along predetermined lines for singulating the bare wafer. Thereby, through ablation based on multi-photon absorption, the modification for chipping is formed inside the wafer (the depth from the first surface of the wafer is 50 μm) by drawing a grid of 3 mm × 7 mm for each interval. sexual area. Then, a back grinding device (product name "DGP8760", manufactured by Disco Corporation) was used to grind the second surface of the wafer to thin the wafer to a thickness of 30 μm. As described above, the wafer is formed while being held on the wafer processing belt. The wafer includes a section for dicing the wafer into a plurality of wafers (3 mm × 7 mm). (Production of chip (Die)) The bare wafer prepared as above is attached to the die-cut die-adhesive film. Through the expansion step, the bare wafer attached to the die attach film is cut and divided into small pieces. Furthermore, with the wafer processing tape peeled off from the bare wafer, the expansion step was performed using a wafer separation device (product name: "Die Separator DDS2300", manufactured by Disco Corporation). In addition, in the expansion step, after cold expansion, normal temperature expansion is performed. Cold expansion is implemented as follows. Specifically, a 12-inch-diameter SUS ring frame (manufactured by Disco) was attached at room temperature to the area where the frame was intended to be attached on the adhesive layer of the die-cut die-attach film attached to the bare wafer. . Then, the bare wafer with the SUS ring frame attached is mounted on the wafer dividing device. Then, the cold expansion unit is used to cut the wafer and the bonding wafer under the conditions of expansion temperature -15°C, expansion speed 100 mm/second, and expansion amount 10 mm, to obtain multiple wafers with bonding wafer layers. Furthermore, the expansion was carried out at room temperature under the conditions of an expansion speed of 1 mm/second and an expansion amount of 10 mm. Then, while maintaining the expanded state, a heater is used to cause thermal shrinkage of the dicing tape surrounding the outer periphery of the wafer under the conditions of a heating temperature of 250°C, a heating distance of 20 mm, and a rotation speed of 3°/sec. That is, by using the heat treatment method shown in FIG. 7 , heat treatment is performed on the portion of the dicing belt that does not overlap with the plurality of semiconductor wafer groups, so that the heat-treated portion undergoes thermal shrinkage. After heat shrinkage, the inter-wafer spacing (notch) of the bonded wafer is measured at multiple locations through microscope observation. The incision is determined by measuring the distance between any 10 locations and taking the arithmetic mean of the measured values. When the notch (average value) is 15 μm or more, it is evaluated as "good", when it is 50 μm or more, it is evaluated as "particularly good", and when it is less than 15 μm, it is evaluated as "poor".

＜性能評價(切口不均一之抑制/切口之均一性)＞ 如上所述地使切晶帶之一部分發生熱收縮後，利用顯微鏡，於複數個部位觀察帶黏晶片之晶片間之間隔(切口)。具體而言，於如上所述地測定晶片間之間隔(切口)之部分，觀察因割斷而成為矩形狀之複數個晶片間之切口。更具體而言，觀察於彼此正交之各晶片之兩條邊分別延伸之方向(A方向及B方向)上相鄰之4個晶片組中的晶片間之切口。根據於A方向及B方向上分別延伸之切口(切割線)是否為直線狀來評價切口之均一性。將切割線於A方向及B方向上均成為直線狀(看起來呈十字架狀)之情況判定為「良好」。另一方面，將切割線於A方向或B方向之任一方向上彎曲之情況判定為「不良」。 ＜Performance evaluation (suppression of uneven incision/uniformity of incision)＞ After thermally shrinking a part of the dicing tape as described above, the gaps between the wafers (cuts) of the bonded wafer tape are observed at multiple locations using a microscope. Specifically, at the portion where the distance (notch) between the wafers is measured as described above, the notches between the plurality of wafers formed into rectangular shapes by cutting are observed. More specifically, the incisions between the wafers in four adjacent wafer groups in the directions in which the two sides of each wafer are orthogonal to each other extend respectively (direction A and direction B) are observed. The uniformity of the incisions is evaluated based on whether the incisions (cutting lines) extending in the A direction and the B direction are straight. The case where the cutting line is straight (looks like a cross) in both the A direction and the B direction is judged as "good". On the other hand, the case where the cutting line is bent in either the A direction or the B direction is judged as "defective".

由上述評價結果可把握，實施例之切晶黏晶膜與比較例之切晶黏晶膜相比，能夠於擴展步驟後使半導體晶片間之切口充分隔開、及能夠抑制切口因部位而不均一。From the above evaluation results, it can be understood that compared with the die-cut die-attach film of the comparative example, the die-cut die-attach film of the Example can fully separate the incisions between the semiconductor wafers after the expansion step, and can suppress the incisions from being damaged depending on the location. Uniform.

實施例之切晶黏晶膜中，切晶帶於120℃下之彈性模數為0.10 MPa以上，切晶帶於120℃下之熱收縮率為6%以上。 藉由於製造半導體裝置時使用具有此種構成之實施例之切晶黏晶膜，能夠效率良好地製造半導體裝置。於半導體裝置之製造中，於擴展步驟中，拉伸切晶帶並將半導體晶圓小片化。並且，於擴展步驟之後，例如一邊使加熱用加熱器等沿小片化之複數個半導體晶片組之外周於一個方向上移動，一邊對複數個半導體晶片組之周圍部分之切晶帶進行加熱，藉此使其發生熱收縮。藉由如此於半導體晶片組之周圍部分使切晶帶發生熱收縮，而能夠減弱切晶帶於被拉伸之方向之反方向上收縮的力。與切晶帶收縮之力減弱相應地，能夠保持暫時擴大之相鄰之半導體晶片之間隔(切口)。此時，藉由如上述實施例般使切晶帶於120℃下之熱收縮率為6%以上，能夠充分地抑制擴展步驟後之切晶帶之外周部分之鬆弛。因此，能夠抑制與複數個半導體晶片組重疊之切晶帶之中央部分收縮而復原，能夠使半導體晶片間之切口充分隔開。 又，藉由如上述實施例般使切晶帶於120℃下之彈性模數為0.10 MPa以上，而於切晶帶中之被加熱處理之部分中混合存在最初被加熱而溫度更低之部位與最後被加熱而溫度更高之部位(例如120℃附近)。如上所述，於切晶帶中，即使受到加熱處理之部分中存在溫度差，亦由於高溫部分之彈性模數較大，故能抑制與複數個半導體晶片組重疊之部分(中央部分)之切晶帶如上所述要收縮時之力的不均一。因此，認為能夠抑制半導體晶片組中之切口因部位而不均一。 [產業上之可利用性] In the die-cut die-bonding film of the embodiment, the elastic modulus of the die-cut tape at 120°C is more than 0.10 MPa, and the thermal shrinkage rate of the die-cut tape at 120°C is more than 6%. By using the die-cut die-bonding film of the embodiment having such a structure when manufacturing a semiconductor device, the semiconductor device can be manufactured efficiently. In the fabrication of semiconductor devices, in an expansion step, the dicing tape is stretched and the semiconductor wafer is diced. Furthermore, after the expansion step, for example, while moving a heating heater or the like in one direction along the outer periphery of the plurality of diced semiconductor wafer groups, the dicing tape around the plurality of semiconductor wafer groups is heated, thereby This causes thermal shrinkage. By causing the dicing tape to thermally shrink in the peripheral portion of the semiconductor wafer group, the force of shrinkage of the dicing tape in a direction opposite to the direction in which the dicing tape is stretched can be weakened. As the shrinkage force of the dicing belt weakens, the temporarily enlarged distance (notch) between adjacent semiconductor wafers can be maintained. At this time, by setting the thermal shrinkage rate of the diced tape at 120° C. to 6% or more as in the above-mentioned embodiment, relaxation of the outer peripheral portion of the diced tape after the expansion step can be sufficiently suppressed. Therefore, it is possible to suppress the shrinkage and recovery of the central portion of the dicing belt overlapping the plurality of semiconductor wafer groups, and to sufficiently space the slits between the semiconductor wafers. In addition, by making the elastic modulus of the diced tape at 120°C to be 0.10 MPa or more as in the above embodiment, the portions of the diced tape that were heated are mixed with the portions that were initially heated and have a lower temperature. And the part that is heated last and has a higher temperature (for example, around 120°C). As described above, in the dicing belt, even if there is a temperature difference in the portion subjected to heat treatment, the elastic modulus of the high-temperature portion is large, so the dicing of the portion (central portion) overlapping with the plurality of semiconductor wafer groups can be suppressed. The force is not uniform when the crystal ribbon shrinks as mentioned above. Therefore, it is considered that the incisions in the semiconductor wafer group can be suppressed from being uneven depending on the location. [Industrial availability]

本發明之切晶黏晶膜例如適宜地用作製造半導體裝置(半導體積體電路)時之輔助用具。The die-cut die-bonding film of the present invention is suitably used as an auxiliary tool in manufacturing semiconductor devices (semiconductor integrated circuits), for example.

1:切晶黏晶膜 10:黏晶片 20:切晶帶 21:基材層 21a:第1基材層 21b:第2基材層 21c:第3基材層 22:黏著劑層 G:背面研磨帶 H:保持器 J:吸附治具 K:研削墊 L:引線 M:熱固性樹脂 P:頂銷構件 R:切晶環 S:加熱器 U:頂起構件 W:半導體晶圓 X:半導體晶片 Z:被接著體 1: Cut crystal bonding film 10: Stick the chip 20: Cutting belt 21:Substrate layer 21a: 1st base material layer 21b: 2nd base material layer 21c: 3rd base material layer 22: Adhesive layer G: Back grinding tape H: retainer J: Adsorption fixture K: grinding pad L:lead M: Thermosetting resin P: ejector pin component R: cutting ring S: heater U: jack up component W: semiconductor wafer X:Semiconductor chip Z: Object to be connected

圖1係將本實施方式之切晶黏晶膜沿著厚度方向切斷之剖視圖。 圖2係將本實施方式之切晶黏晶膜中之切晶帶之基材層之一例沿著厚度方向切斷的剖視圖。 圖3A係模式性地表示半導體裝置之製造方法中之隱形切割步驟之情況的剖視圖。 圖3B係模式性地表示半導體裝置之製造方法中之隱形切割步驟之情況的剖視圖。 圖3C係模式性地表示半導體裝置之製造方法中之隱形切割步驟之情況的剖視圖。 圖3D係模式性地表示半導體裝置之製造方法中之背面研磨步驟之情況的剖視圖。 圖4A係模式性地表示半導體裝置之製造方法中之安裝步驟之情況的剖視圖。 圖4B係模式性地表示半導體裝置之製造方法中之安裝步驟之情況的剖視圖。 圖5A係模式性地表示半導體裝置之製造方法中之低溫下之擴展步驟之情況的剖視圖。 圖5B係模式性地表示半導體裝置之製造方法中之低溫下之擴展步驟之情況的剖視圖。 圖5C係模式性地表示半導體裝置之製造方法中之低溫下之擴展步驟之情況的剖視圖。 圖6A係模式性地表示半導體裝置之製造方法中之常溫下之擴展步驟之情況的剖視圖。 圖6B係模式性地表示半導體裝置之製造方法中之常溫下之擴展步驟之情況的剖視圖。 圖7係自半導體晶片之厚度方向之一側觀察半導體裝置之製造方法中的擴展步驟後之加熱處理之情況的模式圖。 圖8係模式性地表示半導體裝置之製造方法中之拾取步驟之情況的剖視圖。 圖9係模式性地表示半導體裝置之製造方法中之黏晶步驟及引線接合步驟之情況的剖視圖。 圖10係模式性地表示半導體裝置之製造方法中之密封步驟之情況的剖視圖。 FIG. 1 is a cross-sectional view of the die-cut die-bonding film of this embodiment cut along the thickness direction. FIG. 2 is a cross-sectional view cut along the thickness direction of an example of the base material layer of the die-cutting tape in the die-cutting die-bonding film according to this embodiment. 3A is a cross-sectional view schematically showing the state of the stealth dicing step in the manufacturing method of a semiconductor device. 3B is a cross-sectional view schematically showing the state of the stealth dicing step in the manufacturing method of a semiconductor device. 3C is a cross-sectional view schematically showing the state of the stealth dicing step in the manufacturing method of a semiconductor device. 3D is a cross-sectional view schematically showing the back grinding step in the method of manufacturing a semiconductor device. 4A is a cross-sectional view schematically showing a mounting step in a method of manufacturing a semiconductor device. 4B is a cross-sectional view schematically showing a mounting step in the method of manufacturing a semiconductor device. FIG. 5A is a cross-sectional view schematically showing a state of an expansion step at a low temperature in a manufacturing method of a semiconductor device. 5B is a cross-sectional view schematically showing the state of the expansion step at low temperature in the manufacturing method of the semiconductor device. 5C is a cross-sectional view schematically showing the state of the expansion step at low temperature in the manufacturing method of the semiconductor device. FIG. 6A is a cross-sectional view schematically showing an expansion step at room temperature in a method of manufacturing a semiconductor device. FIG. 6B is a cross-sectional view schematically showing an expansion step at room temperature in the manufacturing method of a semiconductor device. 7 is a schematic view of the heat treatment after the expansion step in the manufacturing method of the semiconductor device, as viewed from one side in the thickness direction of the semiconductor wafer. 8 is a cross-sectional view schematically showing a pickup step in a method of manufacturing a semiconductor device. 9 is a cross-sectional view schematically showing the die bonding step and the wire bonding step in the manufacturing method of the semiconductor device. FIG. 10 is a cross-sectional view schematically showing the sealing step in the method of manufacturing a semiconductor device.

1:切晶黏晶膜 1: Cut crystal bonding film

10:黏晶片 10: Stick the chip

20:切晶帶 20: Cutting strip

21:基材層 21:Substrate layer

22:黏著劑層 22: Adhesive layer

Claims (8)

一種切晶黏晶膜，其具備： 切晶帶，其具有基材層及重疊於該基材層之黏著劑層；及黏晶片，其重疊於該切晶帶； 上述切晶帶於120℃下之彈性模數為0.10MPa以上， 上述切晶帶於120℃下之熱收縮率為6%以上。 A kind of cut crystal adhesive film, which has: A wafer cutting belt, which has a base material layer and an adhesive layer overlapping the base material layer; and a die bonding chip, which overlaps the wafer cutting belt; The elastic modulus of the above-mentioned crystal-cut ribbon at 120°C is above 0.10MPa. The thermal shrinkage rate of the above-mentioned cutting ribbon at 120°C is more than 6%. 如請求項1之切晶黏晶膜，其中上述基材層包含乙烯-乙酸乙烯酯共聚樹脂及聚丙烯樹脂。The die-cut die-bonding film of claim 1, wherein the base material layer includes ethylene-vinyl acetate copolymer resin and polypropylene resin. 如請求項1或2之切晶黏晶膜，其中上述基材層由複數個層構成。The die-cut die-bonding film of claim 1 or 2, wherein the base material layer is composed of a plurality of layers. 如請求項3之切晶黏晶膜，其中上述基材層由3層以上構成。For example, the die-cut die-bonding film of claim 3, wherein the above-mentioned base material layer is composed of three or more layers. 如請求項4之切晶黏晶膜，其中上述基材層由第1基材層、第2基材層及第3基材層堆疊而成之3層構成， 分別配置於上述基材層之一表面側及另一表面側之上述第1基材層及上述第3基材層均包含聚丙烯樹脂，配置於上述第1基材層及上述第3基材層之間之上述第2基材層包含乙烯-乙酸乙烯酯共聚樹脂。 Such as the die-cut die-bonding film of claim 4, wherein the above-mentioned base material layer is composed of three layers stacked together: a first base material layer, a second base material layer and a third base material layer, The above-mentioned first base material layer and the above-mentioned third base material layer respectively arranged on one surface side and the other surface side of the above-mentioned base material layer both contain polypropylene resin, and are arranged on the above-mentioned first base material layer and the above-mentioned third base material. The above-mentioned second base material layer between the layers contains ethylene-vinyl acetate copolymer resin. 如請求項5之切晶黏晶膜，其中上述第1基材層及上述第3基材層中之至少一者進而包含抗靜電劑。The die-cut die-bonding film of claim 5, wherein at least one of the above-mentioned first base material layer and the above-mentioned third base material layer further contains an antistatic agent. 如請求項5之切晶黏晶膜，其中上述第1基材層及上述第3基材層各自獨立地具有1 μm以上且15 μm以下之厚度，上述第2基材層具有70 μm以上且120 μm以下之厚度。The die-cut die-bonding film of claim 5, wherein the above-mentioned first base material layer and the above-mentioned third base material layer each independently have a thickness of 1 μm or more and 15 μm or less, and the above-mentioned second base material layer has a thickness of 70 μm or more and 70 μm or more. Thickness below 120 μm. 如請求項3之切晶黏晶膜，其中構成上述基材層之複數個層之面中距離上述黏著劑層最遠之面的表面電阻率為1.00×10 ⁹[Ω/sq.]以上且1.00×10 ¹²[Ω/sq.]以下。 The die-cut die-bonding film of claim 3, wherein the surface resistivity of the surface farthest from the adhesive layer among the plurality of layers constituting the base material layer is 1.00×10 ⁹ [Ω/sq.] or more and 1.00×10 ¹² [Ω/sq.] or less.