TW202308791A - Wafer polishing apparatus and wafer polishing method - Google Patents
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本發明是有關於一種晶圓拋光裝置及晶圓拋光方法，且特別是有關於一種具有對應轉速關係的晶圓拋光裝置及晶圓拋光方法。The present invention relates to a wafer polishing device and a wafer polishing method, and in particular to a wafer polishing device and a wafer polishing method with a corresponding rotational speed relationship.
一般對於晶圓拋光中可能面臨的刮傷，大多藉由拋光液的配比、拋光的移除量、研磨粒及/或拋光墊的選擇進行優化調整。然而，上述的方式大多偏向於硬體的調整。因此，是否具有其他的方式可以提升晶圓拋光的品質，實已成目前亟欲研究的課題。Generally, the scratches that may be faced during wafer polishing are mostly optimized and adjusted by the proportion of polishing liquid, the amount of polishing removal, the selection of abrasive grains and/or polishing pads. However, most of the above methods are biased towards hardware adjustment. Therefore, whether there are other ways to improve the quality of wafer polishing has become an urgent research topic.
本發明提供一種晶圓拋光裝置或晶圓拋光方法，可以使拋光後的晶圓具有較佳的品質。The invention provides a wafer polishing device or a wafer polishing method, which can make the polished wafer have better quality.
本發明的晶圓拋光裝置適於拋光晶圓。晶圓拋光裝置包括拋光載盤、轉台、資料庫、輸入單元以及控制單元。拋光載盤適於固定晶圓。轉台對應於拋光載盤設置。轉台適於使拋光墊放置於其上，以使拋光墊的盤面適於面向晶圓。控制單元訊號連接於拋光載盤、轉台、資料庫及輸入單元。資料庫儲存至少一組拋光參數陣列。拋光參數陣列包括對應於拋光載盤的第一轉速、對應於轉台的第二轉速以及對應於第一轉速及對應於第二轉速的晶圓拋光資料。第一轉速為N1轉/分。第二轉速為N2轉/分。第一轉速或第二轉速具有以下關係：30≦N1≦75或10≦N2≦60；且N1/N2=Q1，N2/N1=Q2，Q1及Q2皆不為自然數。The wafer polishing apparatus of the present invention is suitable for polishing wafers. The wafer polishing device includes a polishing carrier, a turntable, a database, an input unit and a control unit. Polishing plates are suitable for holding wafers. The turntable corresponds to the polishing carrier setup. The turntable is adapted to have the polishing pad placed thereon such that the disc surface of the polishing pad is adapted to face the wafer. The signal of the control unit is connected to the polishing carrier, the turntable, the database and the input unit. The database stores at least one set of polishing parameter arrays. The polishing parameter array includes a first rotational speed corresponding to the polishing carrier, a second rotational speed corresponding to the turntable, and wafer polishing data corresponding to the first rotational speed and the second rotational speed. The first rotational speed is N1 rev/min. The second rotational speed is N2 rev/min. The first rotation speed or the second rotation speed has the following relationship: 30≦N1≦75 or 10≦N2≦60; and N1/N2=Q1, N2/N1=Q2, Q1 and Q2 are not natural numbers.
在本發明的一實施例中，晶圓拋光資料包括以下其中一項或其組合：拋光載盤的第一轉速及拋光墊的第二轉速對應的拋光液流量；拋光載盤的第一轉速及拋光墊的第二轉速對應的預計加工時間；或拋光載盤的第一轉速及拋光墊的第二轉速對應的面積重複率，其中面積重複率為：於拋光週期時間內，單片的晶圓與拋光墊相接觸的軌跡面積對單片的晶圓的行徑面積的比值。In one embodiment of the present invention, the wafer polishing data includes one of the following or a combination thereof: the polishing fluid flow rate corresponding to the first rotational speed of the polishing carrier and the second rotational speed of the polishing pad; the first rotational speed and the The estimated processing time corresponding to the second rotational speed of the polishing pad; or the area repetition rate corresponding to the first rotational speed of the polishing carrier and the second rotational speed of the polishing pad, wherein the area repetition rate is: within the polishing cycle time, a single wafer The ratio of the track area in contact with the polishing pad to the track area of a single wafer.
在本發明的一實施例中，輸入單元適於被輸入至少一組輸入參數，且輸入參數包括：晶圓的直徑；拋光墊的盤面的尺寸；晶圓的厚度；以及對晶圓進行拋光的預計拋光量。In an embodiment of the present invention, the input unit is adapted to be input with at least one set of input parameters, and the input parameters include: the diameter of the wafer; the size of the disc surface of the polishing pad; the thickness of the wafer; Estimated amount of polishing.
在本發明的一實施例中，資料庫儲存多組拋光參數陣列，且控制單元適於將輸入參數與資料庫中的多組拋光參數陣列進行比對，以拋光晶圓。In an embodiment of the present invention, the database stores multiple sets of polishing parameter arrays, and the control unit is adapted to compare the input parameters with the multiple sets of polishing parameter arrays in the database to polish the wafer.
在本發明的一實施例中，第一轉速或第二轉速更具有以下關係：Q1或Q2的至少其中之一為3位以上有限小數或無限小數。In an embodiment of the present invention, the first rotational speed or the second rotational speed further has the following relationship: at least one of Q1 or Q2 is a finite decimal or an infinite decimal with more than 3 digits.
在本發明的一實施例中，第一轉速或第二轉速更具有以下關係：N1及N2的最大公因數大於或等於5。In an embodiment of the present invention, the first rotational speed or the second rotational speed further has the following relationship: the greatest common factor of N1 and N2 is greater than or equal to 5.
在本發明的一實施例中，晶圓拋光資料包括拋光載盤的第一轉速及拋光墊的第二轉速對應的面積重複率，且面積重複率小於或等於40%，其中面積重複率為：於拋光週期時間內，單片的晶圓與拋光墊相接觸的軌跡面積對單片的晶圓的行徑面積的比值。In one embodiment of the present invention, the wafer polishing data includes the area repetition rate corresponding to the first rotational speed of the polishing carrier and the second rotational speed of the polishing pad, and the area repetition rate is less than or equal to 40%, wherein the area repetition rate is: During the polishing cycle time, the ratio of the track area where a single wafer is in contact with the polishing pad to the area of the single wafer.
本發明的晶圓拋光方法包括以下步驟：提供晶圓拋光裝置，其包括：拋光載盤以及對應於拋光載盤設置的轉台；將晶圓置於拋光載盤上，將拋光墊置於轉台上，且使拋光墊的盤面面向晶圓；以及使拋光載盤沿第一方向旋轉，且使轉台沿第二方向旋轉，以藉由拋光墊對固定於拋光載盤上的晶圓進行拋光，其中：拋光載盤具有第一轉速，第一轉速為N1轉/分；轉台具有第二轉速，第二轉速為N2轉/分；且第一轉速或第二轉速具有以下關係：30≦N1≦75或10≦N2≦60；且N1/N2=Q1，N2/N1=Q2，Q1及Q2皆不為自然數。The wafer polishing method of the present invention comprises the following steps: providing a wafer polishing device, which includes: a polishing carrier and a turntable corresponding to the polishing carrier; placing the wafer on the polishing carrier, and placing the polishing pad on the turntable , and make the disc surface of the polishing pad face the wafer; and rotate the polishing carrier along the first direction, and rotate the turntable along the second direction, so as to polish the wafer fixed on the polishing carrier by the polishing pad, wherein : The polishing carrier has a first rotating speed, and the first rotating speed is N1 rpm; the turntable has a second rotating speed, and the second rotating speed is N2 rpm; and the first rotating speed or the second rotating speed has the following relationship: 30≦N1≦75 Or 10≦N2≦60; and N1/N2=Q1, N2/N1=Q2, neither Q1 nor Q2 are natural numbers.
在本發明的一實施例中，晶圓拋光裝置更包括輸入單元及資料庫，其中資料庫儲存拋光載盤的第一轉速及轉台的第二轉速對應的晶圓拋光資料，且晶圓拋光方法更包括以下步驟：藉由輸入單元輸入對晶圓的拋光規格；以及藉由拋光規格與資料庫中的晶圓拋光資料進行比對，以估算於拋光載盤的第一轉速及拋光墊的第二轉速。In an embodiment of the present invention, the wafer polishing device further includes an input unit and a database, wherein the database stores wafer polishing data corresponding to the first rotational speed of the polishing carrier and the second rotational speed of the turntable, and the wafer polishing method It further includes the following steps: inputting the polishing specifications of the wafer through the input unit; and comparing the polishing specifications with the wafer polishing data in the database to estimate the first rotational speed of the polishing carrier disc and the first rotation speed of the polishing pad. Two speeds.
在本發明的一實施例中，第一轉速或第二轉速更具有以下關係：Q1或Q2的至少其中之一為3位以上有限小數或無限小數；第一轉速或第二轉速更具有以下關係：N1及N2的最大公因數小於或等於5；且/或晶圓拋光資料包括拋光載盤的第一轉速及拋光墊的第二轉速對應的面積重複率，且面積重複率小於或等於40%，其中面積重複率為：於拋光週期時間內，單片的晶圓與拋光墊相接觸的軌跡面積對單片的晶圓的行徑面積的比值。In an embodiment of the present invention, the first rotational speed or the second rotational speed further has the following relationship: at least one of Q1 or Q2 is a finite decimal or infinite decimal with more than 3 digits; the first rotational speed or the second rotational speed further has the following relationship : The greatest common factor of N1 and N2 is less than or equal to 5; and/or the wafer polishing data includes the area repetition rate corresponding to the first rotational speed of the polishing carrier and the second rotational speed of the polishing pad, and the area repetition rate is less than or equal to 40% , where the area repetition rate is: the ratio of the track area where a single wafer is in contact with the polishing pad to the track area of a single wafer within the polishing cycle time.
基於上述，本發明至少藉由前述第一轉速及前述第二轉速的關係，可以使晶圓拋光裝置或晶圓拋光方法可以使拋光後的晶圓具有較佳的品質。Based on the above, at least through the relationship between the aforementioned first rotational speed and the aforementioned second rotational speed, the present invention enables the wafer polishing device or the wafer polishing method to make the polished wafer have better quality.
請參照圖1A，晶圓拋光裝置100包括拋光載盤110、轉台120、資料庫140、輸入單元150以及控制單元130。晶圓拋光裝置100適於對晶圓910進行拋光（即，拋光晶圓910）。拋光載盤110適於固定晶圓910。轉台120對應於拋光載盤110設置。轉台120適於使拋光墊920放置於其（此處為：轉台120）上。至少在對晶圓910進行拋光時，拋光墊920的盤面920a適於面向晶圓910。Referring to FIG. 1A , the
在本實施例中，晶圓拋光裝置100可以更包括拋光液供給單元160。拋光液供給單元160可以包括對應的液體閥162。液體閥162可以控制拋光液169的供給量及/或流速。In this embodiment, the
在本實施例中，控制單元130可以藉由訊號線171、172、174、175、176而以有線訊號傳輸（wired signal transmission）的方式訊號連接於拋光載盤110、轉台120、資料庫140、輸入單元150及/或拋光液供給單元160的至少其中之一，但本發明不限於此。在一實施例中，控制單元130可以藉由無線訊號傳輸（wireless signal transmission）的方式訊號連接於拋光載盤110、轉台120、資料庫140、輸入單元150及/或拋光液供給單元160的至少其中之一。換句話說，本發明中所提到的訊號連接可以泛指有線訊號傳輸或無線訊號傳輸的連接方式。另外，本發明並未限定所有的訊號連接方式需為相同或不同。In this embodiment, the
在一實施例中，拋光載盤110可以包括致動器（actuator）111。控制單元130可以訊號連接於拋光載盤110的致動器111，以驅使拋光載盤110的整體或一部分沿對應的方向移動及/或轉動。在一實施例中，前述的致動器111可以包括供電裝置、馬達、皮帶、齒輪及其他相關元件等，於本發明並不加以限制。前述的相關元件例如包括通訊元件、功率元件、減震元件、定位元件或感測元件等，於本發明並不加以限制。In one embodiment, the
在一實施例中，拋光墊920可以被置於或固定於轉台120上。轉台120可以包括致動器121。控制單元130可以訊號連接於轉台120的致動器121，以驅使轉台120或轉台120上的拋光墊920沿對應的方向轉動。在一實施例中，轉台120的致動器121可以相同或相似於拋光載盤110的致動器111，但本發明不限於此。In one embodiment, the
在本實施例中，控制單元130可以包含對應的硬體或軟體。舉例而言，控制單元130例如包括電腦、計算器、對應的計算程式、對應的邏輯判斷程式或適於進行先進製程控制（Advanced Process Control；APC）的平台（platform），但本發明不限於此。In this embodiment, the
在本實施例中，輸入單元150例如是滑鼠、鍵盤或觸控面板，但本發明不限於此。在一實施例中，輸入單元150可以包括虛擬實體的輸入單元150。舉例而言，輸入單元150可以包括訊號接收元件（如：通訊晶片、通訊天線及/或通訊埠），而可以經由遙控（remote control）的方式將參數或命令經由輸入單元150傳送至控制單元130。In this embodiment, the
在本實施例中，資料庫140例如包括可儲存相關資料的記憶體、硬碟、磁碟陣列、雲端系統及/或其他可暫時性地或永久性地儲存資料的電子元件或裝置。前述的相關資料可以包括至少一組拋光參數陣列（parameter array）。稍後將詳細地描述拋光參數陣列。In this embodiment, the
在本實施例中，藉由晶圓拋光裝置100對晶圓910進行拋光的方法舉例如下。不限順序地進行以下步驟：將拋光墊920放置於或固定於轉台120上；且將晶圓910置於拋光載盤110的承載面100a上，並藉由拋光載盤110固定晶圓910。然後，不限順序地進行以下步驟：使拋光墊920的盤面920a面向拋光載盤110上的晶圓910，以使拋光載盤110上的晶圓910與拋光墊920相接觸；使拋光載盤110及/或位於其上的晶圓910沿第一方向D1旋轉；且使轉台120或對應於其的拋光墊920沿第二方向D2旋轉。In this embodiment, the method of polishing the
在本實施例中，拋光載盤110/晶圓910旋轉的第一方向D1可以相反於轉台120/拋光墊920旋轉的第二方向D2。舉例而言，第一方向D1與第二方向D2的其中之一可以為順時鐘方向，且第一方向D1與第二方向D2的其中另一可以為逆時鐘方向。In this embodiment, the first direction D1 in which the
在本實施例中，控制單元130可以依據資料庫140中的拋光參數陣列，以使拋光載盤110及/或位於其（此處為：拋光載盤110）上的晶圓910具有對應的第一轉速，且使轉台120或對應於其（此處為：轉台120）的拋光墊920具有對應的第二轉速。In this embodiment, the
請參照圖1A及圖1B，拋光參數陣列包括對應於拋光載盤110/晶圓910的第一轉速，對應於轉台120/拋光墊920的第二轉速，以及依據前述第一轉速及前述第二轉速所對應的晶圓拋光資料。第一轉速為N1轉/分（rounds per minute；rpm），第二轉速為N2轉/分，且第一轉速或第二轉速具有以下關係：(1) 30≦N1≦75 或 10≦N2≦60；且(2) N1/N2 = Q1，N2/N1 = Q2，其中Q1及Q2皆不為自然數（natural number）。Please refer to FIG. 1A and FIG. 1B, the polishing parameter array includes a first rotational speed corresponding to the
一組拋光參數陣列可以包括對應的第一轉速、對應的第二轉速及對應的晶圓拋光資料。以圖1B為例，資料庫可以儲存多組（如：i組）的拋光參數陣列。依此類推，在圖1B中，以(1)表示第1組所對應的數值，以(2)表示第2組所對應的數值，以(i)表示第i組所對應的數值。A set of polishing parameter arrays may include a corresponding first rotational speed, a corresponding second rotational speed, and corresponding wafer polishing data. Taking FIG. 1B as an example, the database can store multiple sets (for example: i set) of polishing parameter arrays. By analogy, in FIG. 1B , (1) represents the value corresponding to the first group, (2) represents the value corresponding to the second group, and (i) represents the value corresponding to the i-th group.
在一實施例中，30≦N1≦75 及/或 10≦N2≦60 較符合晶圓拋光裝置100的機台設定範圍，且/或較容易據以實施。In one embodiment, 30≦N1≦75 and/or 10≦N2≦60 are more in line with the setting range of the
在一實施例中，藉由上述第一轉速及第二轉速之間的關係，可以提升晶圓910的拋光品質（如：降低拋光的刮傷問題，但不限）。In one embodiment, the polishing quality of the
在一實施例中，第一轉速或第二轉速可以更具有以下關係：Q1或Q2的至少其中之一為小數位數（decimal places）至少為3位的有限小數（finite decimal）；或，可被稱為：3位以上有限小數。也就是說，在Q1或Q2中，至少在小數點後（after the decimal point）第M位的數值不為0（即，可為1~9之間任一的自然數），其中M的值為大於或等於3的自然數。In an embodiment, the first rotational speed or the second rotational speed may further have the following relationship: at least one of Q1 or Q2 is a finite decimal with at least 3 decimal places; or, Known as: 3 or more finite decimals. That is to say, in Q1 or Q2, at least the value of the Mth digit after the decimal point (after the decimal point) is not 0 (that is, it can be any natural number between 1 and 9), where the value of M is a natural number greater than or equal to 3.
在一實施例中，第一轉速或第二轉速可以更具有以下關係：Q1或Q2為無限小數（infinite decimal）。In an embodiment, the first rotational speed or the second rotational speed may further have the following relationship: Q1 or Q2 is an infinite decimal.
在一實施例中，第一轉速或第二轉速可以更具有以下關係：若N1及N2為整數，則N1及N2的最大公因數（greatest common divisor / highest common factor）小於或等於5。In an embodiment, the first rotational speed or the second rotational speed may further have the following relationship: if N1 and N2 are integers, then the greatest common divisor/highest common factor of N1 and N2 is less than or equal to 5.
在本實施例中，晶圓拋光資料可以包括第一轉速及/或第二轉速所對應的拋光液流量。In this embodiment, the wafer polishing data may include the flow rate of the polishing liquid corresponding to the first rotational speed and/or the second rotational speed.
在本實施例中，晶圓拋光資料可以包括第一轉速及/或第二轉速所對應的預計加工時間。In this embodiment, the wafer polishing data may include the estimated processing time corresponding to the first rotation speed and/or the second rotation speed.
在本實施例中，晶圓拋光資料可以包括第一轉速及/或第二轉速所對應的面積重複率。In this embodiment, the wafer polishing data may include the area repetition rate corresponding to the first rotational speed and/or the second rotational speed.
在一實施例中，晶圓拋光資料可以包括前述拋光液流量、前述預計加工時間及前述面積重複率中至少一項或上述之組合。In one embodiment, the wafer polishing data may include at least one or a combination of the aforementioned polishing fluid flow rate, the aforementioned estimated processing time, and the aforementioned area repetition rate.
在一實施例中，晶圓拋光資料可以更包括拋光量。在一實施例中，拋光量可能會與第一轉速、第二轉速及其（此處為：第一轉速及第二轉速）所對應的預計加工時間及拋光液流量有關。因此，晶圓拋光資料可以藉由先前的實際實驗或加工數據所獲得或推得（如：藉由既有的數據以內插法或外插法而得）。In one embodiment, the wafer polishing data may further include a polishing amount. In an embodiment, the polishing amount may be related to the first rotation speed, the second rotation speed and the corresponding expected processing time (here: the first rotation speed and the second rotation speed) and the flow rate of the polishing liquid. Therefore, wafer polishing data can be obtained or derived from previous actual experiments or processing data (eg, obtained by interpolation or extrapolation from existing data).
在一實施例中，於拋光週期時間內，單片的晶圓910與拋光墊920相接觸的軌跡面積對單片的晶圓910的行徑面積的比值可以為面積重複率，且面積重複率小於或等於40%。面積重複率詳述如後。In one embodiment, within the polishing cycle time, the ratio of the track area of the
舉例而言，由於單片的晶圓910本身具有一定的面積，因此，當使單片的晶圓910與拋光墊920之間具有相對移動時，可以藉由單片的晶圓910在移動過程中與拋光墊920相接觸過的區域定義出對應的面積。而前述的面積我們可以表示為「接觸軌跡面積」。For example, since the
示例性的說明，若（即，其中一種假設狀態）晶圓910相對於拋光墊920的移動軌跡為單純的一直線時，其「接觸軌跡面積」大致上為：晶圓910上一點（如：圓心或邊緣上的一特定點）的行徑路徑 × 晶圓面積。也就是說，在前述的假設狀態之下，而前述的乘積大致上是「接觸軌跡面積」的最大值。也可以說，在前述的假設狀態之下，可以被認為是拋光的面積完全不重複。Illustratively, if (i.e., one of the assumed states) the movement track of the
又示例性的說明，若（即，其中一種假設狀態）晶圓910沿一方向具有對應的轉速（如：沿第一方向D1具有第一轉速），且拋光墊920沿另一方向上具有對應的轉速（如：沿第二方向D2具有第二轉速），而使晶圓910與拋光墊920之間具有相對移動及/或轉動時，常會因為第一轉速及第二轉速的差異，而使晶圓910相對於拋光墊920的移動軌跡分佈可能會較為密集或複雜。也就是說，拋光墊920的一區域在第一時間可以與晶圓910相接觸，然後，前述區域在前述第一時間之後的第二時間可以不與晶圓910相接觸，然後，前述區域在前述第二時間之後的第三時間可以又與晶圓910相接觸。簡單來說，在不同的時間之間，晶圓910與拋光墊920相接觸的區域可能會重疊（包括部分重疊或完全重疊）。如此一來，當晶圓910對拋光墊920完成一週期的軌跡移動之後，可以進行以下的計算：「接觸軌跡面積」/(圓心的行徑路徑 × 晶圓面積)，即可估算出在晶圓910拋光的過程中，其面積重複率。Also illustratively, if (that is, one of the hypothetical states) the
若（即，其中一種假設狀態）前述的面積重複率越高，可能表示拋光墊920於特定區域的損耗越多。因此，若（即，其中一種假設狀態）「接觸軌跡面積」越接近拋光墊920面積（如：可表示為拋光墊920接近100%的使用率），且面積重複率越低（如：可表示為表示接觸區域不重複），則可以被認為拋光墊920的磨耗及/或使用量較為均勻。If (ie, one of the assumptions) the aforementioned areal repetition rate is higher, it may indicate that the
在一實施例中，藉由第一轉速、第二轉速及其對應的旋轉方向，可以模擬或估算出晶圓910與拋光墊920相接觸所對應的軌跡及/或「接觸軌跡面積」。舉例而言，可以藉由座標化、公式化、數值化及/或其他適宜的方式，以模擬或估算出晶圓910與拋光墊920相接觸所對應的軌跡、「接觸軌跡面積」及/或對應的面積重複率。但值得注意的是，本發明對於面積重複率的模擬或估算方式並不加以限制。In one embodiment, by using the first rotational speed, the second rotational speed and their corresponding rotational directions, the corresponding track and/or "contact track area" of the
在本實施例中，適於藉由輸入單元150輸入至少一組輸入參數。如圖1C所示，輸入參數可以包括晶圓910的直徑、拋光墊920的盤面920a的尺寸、晶圓910的厚度、對晶圓910進行拋光的預計拋光量及/或其他欲對晶圓910進行拋光的拋光規格。In this embodiment, it is suitable to input at least one set of input parameters through the
在一實施例中，控制單元130適於將輸入參數與資料庫140中的一組或多組拋光參數陣列進行比對，以拋光晶圓910。In one embodiment, the
舉例而言，可以藉由晶圓拋光資料中拋光量的歷史數據，輸出第一轉速及第二轉速所對應的拋光液流量及/或對應的加工時間，並與輸入參數進行比對，以由控制單元130判斷或選擇出適於進行拋光的參數範圍。For example, the polishing liquid flow rate and/or the corresponding processing time corresponding to the first rotation speed and the second rotation speed can be output by using the historical data of the polishing amount in the wafer polishing data, and compared with the input parameters, so as to obtain The
值得注意的是，若上述的數值在本發明所屬技術領域中具有通常知識者的理解下予以合理的等比例放大、縮小或依據實際的機台狀況而有些微的誤差或調整，仍可為本發明合理解釋之均等範圍內。舉例而言，若一轉速參數為3600轉/時或1轉/秒，則仍可以是轉速參數為60轉/分之均等範圍。又舉例而言，若一轉速參數為3601轉/時、3605轉/時或3610轉/時，但前述的轉速參數與轉速參數為60轉/分相較，若是以基本上相同的方式，實現基本上相同的功能，產生基本上相同的效果，則仍可以是轉速參數為60轉/分之均等範圍。It is worth noting that if the above-mentioned numerical values are reasonably scaled up or down in equal proportions under the understanding of those with ordinary knowledge in the technical field of the present invention, or if there are slight errors or adjustments based on the actual machine conditions, they can still be used for the present invention. within the equal scope of reasonable interpretation of the invention. For example, if a rotational speed parameter is 3600 rpm or 1 rpm, the rotational speed parameter may still be in an equal range of 60 rpm. For another example, if a rotational speed parameter is 3601 rev/hour, 3605 rev/hour or 3610 rev/hour, but the aforementioned rotational speed parameter is 60 rev/min compared with the rotational speed parameter, if in basically the same way, realize Basically the same function produces basically the same effect, and the speed parameter can still be in the equal range of 60 rpm.
以下特別藉由測試例來說明在拋光載盤/晶圓的旋轉方向相反於轉台/拋光墊的旋轉方向的狀態下，且在對應的第一轉速及對應的第二轉速的條件下，晶圓邊緣的一點在拋光墊的盤面上的相對移動軌跡圖式（簡稱為：相對移動軌跡圖式）。並且，在圖2A至圖2D的相對移動軌跡圖式中，橘色實線為拋光墊的盤面的範圍，橘色實線內的橘色點為拋光墊的盤面的中心，藍色實線為初始狀態（即，開始進行拋光時）下拋光載盤的承載面的範圍，藍色實線內的藍色點為初始狀態下拋光載盤的承載面的中心，灰色實線為初始狀態下晶圓的範圍，灰色實線內的灰色點為初始狀態下晶圓的中心，紅色虛線為晶圓邊緣的一點在拋光墊的盤面上的相對移動軌跡，其中前述「晶圓邊緣的一點」為初始狀態下晶圓邊緣最接近承載面邊緣的點。然而，這些測試例在任何意義上均不解釋為限制本發明之範疇。The following test examples are used to illustrate that in the state where the rotation direction of the polishing carrier/wafer is opposite to the rotation direction of the turntable/polishing pad, and under the conditions of the corresponding first rotational speed and the corresponding second rotational speed, the wafer The relative moving track pattern of a point on the edge on the polishing pad surface (abbreviated as: relative moving track pattern). And, in the relative moving locus diagram of Fig. 2A to Fig. 2D, the orange solid line is the range of the disc surface of the polishing pad, the orange point in the orange solid line is the center of the disc surface of the polishing pad, and the blue solid line is The range of the bearing surface of the polishing disc in the initial state (that is, when polishing starts), the blue point in the blue solid line is the center of the bearing surface of the polishing disc in the initial state, and the gray solid line is the grain size in the initial state. The range of the circle, the gray point in the gray solid line is the center of the wafer in the initial state, and the red dotted line is the relative movement track of a point on the edge of the wafer on the surface of the polishing pad, where the aforementioned "point on the edge of the wafer" is the initial The point at which the edge of the wafer is closest to the edge of the carrier surface in the state. However, these test examples are not to be construed as limiting the scope of the present invention in any sense.
在後續測試例的說明中，為清楚表示，第一轉速可能以N1表示，第二轉速可能以N2表示，第一轉速/第二轉速可能以Q1表示，且第二轉速/第一轉速可能以Q2表示。應可理解，N1、N2、Q1及/或Q2的數值可能會因不同的測試例而對應的不同。另外，在對Q1及Q2進行進一步地計算及/或比較時（如：求彼此之商值、最大公因數或其他可能的衍生數值），需先將第一轉速及第二轉速換算至相同單位，以進行後續的數值計算。In the description of subsequent test examples, for clarity, the first rotational speed may be represented by N1, the second rotational speed may be represented by N2, the first rotational speed/second rotational speed may be represented by Q1, and the second rotational speed/first rotational speed may be represented by Q2 said. It should be understood that the values of N1 , N2 , Q1 and/or Q2 may be different for different test cases. In addition, when performing further calculations and/or comparisons of Q1 and Q2 (such as: finding their quotient, greatest common factor, or other possible derived values), it is necessary to first convert the first speed and the second speed to the same unit , for subsequent numerical calculations.
圖2A為[測試例1A]的相對移動軌跡圖式。圖2B為[測試例1B]的相對移動軌跡圖式。圖2C為[測試例1C]的相對移動軌跡圖式。圖2D為[測試例1D]的相對移動軌跡圖式。Fig. 2A is a diagram of the relative movement trajectory of [Test Example 1A]. Fig. 2B is a diagram of the relative moving track of [test example 1B]. FIG. 2C is a schematic diagram of the relative movement trajectory of [Test Example 1C]. Fig. 2D is a schematic diagram of the relative moving trajectory of [test example 1D].
[測試例1A]至[測試例1D]為在拋光載盤/晶圓的旋轉方向相反於轉台/拋光墊的旋轉方向的狀態下，在藉由不同的第一轉速及第二轉速的條件下，對晶圓進行拋光。[測試例1A]至[測試例1D]中所對應的第一轉速及第二轉速，及其對應的關係如[表1]所示。並且，在藉由[表1]所述的的條件下，對晶圓進行拋光之後，各測試例的單一片晶圓之結果如[表2]所示。[Test example 1A] to [Test example 1D] are in the state where the rotation direction of the polishing carrier/wafer is opposite to the rotation direction of the turntable/polishing pad, under the condition of different first rotation speed and second rotation speed , to polish the wafer. [Test Example 1A] to [Test Example 1D] correspond to the first rotational speed and the second rotational speed, and their corresponding relationships are shown in [Table 1]. And, after polishing the wafer under the conditions described in [Table 1], the results of a single wafer in each test example are shown in [Table 2].
[表1]
[表2]
如[表1]、[表2]及圖2A所示，在[測試例1A]中，對應的Q1和Q2為（含）2位以下的有限小數。並且，N1和N2的最大公因數為10。因此，雖然面積重複率可能較低，但一週期的行徑時間較短。如此一來，可能會導致單位時間內會不斷於重複路徑上進行拋光加工，而可能會造成研磨墊使用不均勻，也對應地使的被拋光的晶圓刮傷率偏高。也就是說，若不滿足「Q1或Q2的至少其中之一為小數位數至少為3位的小數」的條件，則可能會因為週期過短，而導致刮傷比例偏高。As shown in [Table 1], [Table 2] and Figure 2A, in [Test Example 1A], the corresponding Q1 and Q2 are (inclusive) finite decimals with 2 or less digits. Also, the greatest common factor of N1 and N2 is 10. Thus, while the areal repetition rate may be lower, the travel time for one cycle is shorter. In this way, the polishing process may be continuously performed on a repeated path per unit time, which may cause uneven use of the polishing pad, and correspondingly increase the scratch rate of the polished wafer. That is to say, if the condition that "at least one of Q1 or Q2 is a decimal with at least 3 decimal places" is not satisfied, the ratio of scratches may be high due to the short period.
如[表1]、[表2]及圖2B所示，在[測試例1B]中，對應的Q1和Q2皆為無限小數。並且，N1和N2的最大公因數為5。因此，雖然面積重複率較[測試例1A]高，但因一週期的行徑較長，因此，可以使單位時間內重複相同路徑的次數較低，而在研磨墊的使用上也可能可以相對地較均勻。如此一來，可以對應地使的被拋光的晶圓刮傷率偏低。也就是說，在[測試例1B]中，其滿足「Q1或 Q2的至少其中之一為小數位數至少為3位的有限小數或無限小數；和，N1和N2的最大公因數大於或等於5的條件」，因此，其週期和/或單片面積重複率可以較為適中，且刮傷比例可以最低（在[測試例1A]-[測試例1D]中進行比較）。As shown in [Table 1], [Table 2] and Figure 2B, in [Test Example 1B], the corresponding Q1 and Q2 are both infinite decimals. Also, the greatest common factor of N1 and N2 is 5. Therefore, although the area repetition rate is higher than that of [Test Example 1A], because the path of one cycle is longer, the number of repetitions of the same path per unit time can be lower, and the use of the polishing pad may also be relatively relatively uniform. In this way, the scratch rate of the polished wafer can be reduced correspondingly. That is, in [Test Example 1B], it satisfies that "at least one of Q1 or Q2 is a finite or infinite decimal with at least 3 decimal places; and, the greatest common factor of N1 and N2 is greater than or equal to 5", therefore, its period and/or single-chip area repetition rate can be relatively moderate, and the scratch rate can be the lowest (compared in [Test Example 1A]-[Test Example 1D]).
如[表1]、[表2]及圖2C所示，在[測試例1C]中，對應的Q1和Q2皆為無限小數。並且，N1和N2的最大公因數為1（即， N1和N2互質）。另外，其進行晶圓拋光的週期時間最長（在[測試例1A]-[測試例1D]中進行比較），因此，其單位時間內重複相同路徑的次數可能也會是最低（在[測試例1A]-[測試例1D]中進行比較）。然而，雖然其路徑不重複或重複率較低，但可能會因為路徑密度過高而造成面積重複率大幅地提升，而可能導致晶圓不斷於重複的區域被拋光加工，反而造成刮傷率的增加（在[測試例1A]-[測試例1D]中進行比較）。也就是說，[測試例1C]中，其不滿足「Q1或Q2的至少其中之一為小數位數至少為3位的有限小數或無限小數；和，最大公因數大於或等於5」的條件。在不滿足上述的條件下，單片面積重複率可能較大，刮傷比例也可能較高。As shown in [Table 1], [Table 2] and FIG. 2C, in [Test Example 1C], the corresponding Q1 and Q2 are both infinite decimals. And, the greatest common factor of N1 and N2 is 1 (ie, N1 and N2 are relatively prime). In addition, it has the longest cycle time for wafer polishing (compared in [Test Example 1A]-[Test Example 1D]), therefore, it may also have the lowest number of repetitions of the same path per unit time (in [Test Example 1A]-[Test Case 1D] for comparison). However, although the path does not repeat or the repetition rate is low, the area repetition rate may be greatly increased due to the high path density, which may cause the wafer to be continuously polished in the repeated area, resulting in a decrease in the scratch rate. increase (compare in [Test Example 1A] - [Test Example 1D]). That is to say, in [Test Example 1C], it does not satisfy the condition that "at least one of Q1 or Q2 is a finite or infinite decimal with at least 3 decimal places; and, the greatest common factor is greater than or equal to 5" . If the above conditions are not met, the repetition rate of single chip area may be high, and the proportion of scratches may also be high.
如[表1]、[表2]及圖2D所示，在[測試例1D]中，對應的Q1和Q2皆為無限小數。並且，N1和N2的最大公因數為2。因此，相較於[測試例1B]，[測試例1D]在一週期的行徑可能較長，而致使單位時間內重複相同路徑的次數相對地可以降低。但是，也可能會因此而致使路徑密度提高，而使得面積重複率偏高。如此一來，可能會導致晶圓於重複的區域被拋光加工，反而造成刮傷率的增加（在[測試例1A]、[測試例1B]及[測試例1D]中進行比較）。也就是說，[測試例1D]中，其滿足「Q1或Q2的至少其中之一為小數位數至少為3位的有限小數或循環小數；和，最大公因數小於5」的條件。在不滿足上述的條件下，單片面積重複率可能偏高，刮傷比例也可能較高。As shown in [Table 1], [Table 2] and Figure 2D, in [Test Example 1D], the corresponding Q1 and Q2 are both infinite decimals. Also, the greatest common factor of N1 and N2 is 2. Therefore, compared with [Test Example 1B], [Test Example 1D] may have a longer path in one cycle, so that the number of repetitions of the same path per unit time may be relatively reduced. However, this may also lead to an increase in path density, resulting in a relatively high area repetition rate. In this way, the wafer may be polished in repeated areas, which may increase the scratch rate instead (compared in [Test Example 1A], [Test Example 1B] and [Test Example 1D]). That is to say, in [Test Example 1D], it satisfies the condition that "at least one of Q1 or Q2 is a finite decimal or a recurring decimal with at least 3 decimal places; and, the greatest common factor is less than 5". If the above conditions are not met, the repetition rate of single chip area may be high, and the proportion of scratches may also be high.
綜上所述，本發明至少藉由晶圓拋光裝置或晶圓拋光方法中的第一轉速及第二轉速的相對關係，以使行徑路徑之週期時間可以盡量地最大化，並使單片晶圓之面積重複率盡量地最小化，而可以使拋光後的晶圓具有較佳的品質。In summary, the present invention at least utilizes the relative relationship between the first rotational speed and the second rotational speed in the wafer polishing device or the wafer polishing method, so that the cycle time of the travel path can be maximized as much as possible, and the single wafer The area repetition rate of the circle is minimized as much as possible, so that the polished wafer can have better quality.
100:晶圓拋光裝置
110:拋光載盤
100a:承載面
111:致動器
D1:第一方向
910:晶圓
120:轉台
920:拋光墊
920a:盤面
121:致動器
D2:第二方向
130:控制單元
140:資料庫
150:輸入單元
160:拋光液供給單元
162:液體閥
169:拋光液
171、172、174、175、176:訊號線
100: Wafer polishing device
110: polishing
圖1A是藉由本發明的一實施例的一種晶圓拋光裝置進行的拋光晶圓的部份立體示意圖。 圖1B是依照本發明的一實施例的一種數值表圖。 圖1C是依照本發明的一實施例的一種數值表圖。 圖2A至圖2D是各測試例的相對移動軌跡圖式。 FIG. 1A is a partial perspective view of a wafer being polished by a wafer polishing apparatus according to an embodiment of the present invention. FIG. 1B is a numerical table diagram according to an embodiment of the present invention. FIG. 1C is a numerical table diagram according to an embodiment of the present invention. 2A to 2D are diagrams of relative movement trajectories of each test case.
100:晶圓拋光裝置 100: Wafer polishing device
110:拋光載盤 110: polishing carrier plate
100a:承載面 100a: bearing surface
111:致動器 111: Actuator
D1:第一方向 D1: the first direction
910:晶圓 910: Wafer
120:轉台 120: turntable
920:拋光墊 920: polishing pad
920a:盤面 920a: disk surface
121:致動器 121: Actuator
D2:第二方向 D2: Second direction
130:控制單元 130: Control unit
140:資料庫 140: Database
150:輸入單元 150: input unit
160:拋光液供給單元 160: Polishing liquid supply unit
162:液體閥 162:Liquid valve
169:拋光液 169: polishing liquid
171、172、174、175、176:訊號線 171, 172, 174, 175, 176: signal lines
Claims (10)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW110130690A TWI774521B (en) | 2021-08-19 | 2021-08-19 | Wafer polishing apparatus and wafer polishing method |
| CN202210814654.2A CN115707558A (en) | 2021-08-19 | 2022-07-12 | Wafer polishing apparatus and wafer polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW110130690A TWI774521B (en) | 2021-08-19 | 2021-08-19 | Wafer polishing apparatus and wafer polishing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI774521B TWI774521B (en) | 2022-08-11 |
| TW202308791A true TW202308791A (en) | 2023-03-01 |
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| TW110130690A TWI774521B (en) | 2021-08-19 | 2021-08-19 | Wafer polishing apparatus and wafer polishing method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115707558A (en) |
| TW (1) | TWI774521B (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW375556B (en) * | 1997-07-02 | 1999-12-01 | Matsushita Electric Ind Co Ltd | Method of polishing the wafer and finishing the polishing pad |
| US6514129B1 (en) * | 1999-10-27 | 2003-02-04 | Strasbaugh | Multi-action chemical mechanical planarization device and method |
| CN206416029U (en) * | 2016-12-30 | 2017-08-18 | 浙江工业大学 | A kind of automatic irrational number rotating ratio polished machine |
| JP2019111618A (en) * | 2017-12-22 | 2019-07-11 | 住友金属鉱山株式会社 | Method for processing single crystal substrate |
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2021
- 2021-08-19 TW TW110130690A patent/TWI774521B/en active
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| Publication number | Publication date |
|---|---|
| TWI774521B (en) | 2022-08-11 |
| CN115707558A (en) | 2023-02-21 |
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