TW202306020A - 靜電吸盤及基板處理裝置 - Google Patents

靜電吸盤及基板處理裝置 Download PDF

Info

Publication number: TW202306020A
Authority: TW; Taiwan
Prior art keywords: electrode; protrusion; electrostatic chuck; substrate; electrostatic
Prior art date: 2021-04-09

Application number

TW111112790A

Other languages

English (en)

Chinese (zh)

Inventor

輿水地塩

Original Assignee

日商東京威力科創股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2021-04-09

Filing date

2022-04-01

Publication date

2023-02-01

2022-04-01 Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司

2023-02-01 Publication of TW202306020A publication Critical patent/TW202306020A/zh

Links

239000000758 substrate Substances 0.000 title claims abstract description 233
238000012545 processing Methods 0.000 title claims description 94
238000012546 transfer Methods 0.000 claims description 60
230000002093 peripheral effect Effects 0.000 claims description 23
238000004891 communication Methods 0.000 claims description 13
238000010438 heat treatment Methods 0.000 claims description 9
239000012530 fluid Substances 0.000 claims description 7
230000006870 function Effects 0.000 claims description 6
239000000463 material Substances 0.000 claims description 4
239000007789 gas Substances 0.000 description 100
239000013589 supplement Substances 0.000 description 19
239000003990 capacitor Substances 0.000 description 11
230000000052 comparative effect Effects 0.000 description 10
238000005516 engineering process Methods 0.000 description 10
238000010586 diagram Methods 0.000 description 8
238000009832 plasma treatment Methods 0.000 description 8
239000001307 helium Substances 0.000 description 6
229910052734 helium Inorganic materials 0.000 description 6
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 6
238000005192 partition Methods 0.000 description 6
239000007787 solid Substances 0.000 description 5
230000001276 controlling effect Effects 0.000 description 4
238000009616 inductively coupled plasma Methods 0.000 description 4
238000001179 sorption measurement Methods 0.000 description 4
BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 3
238000001816 cooling Methods 0.000 description 3
238000009792 diffusion process Methods 0.000 description 3
239000007788 liquid Substances 0.000 description 3
230000004044 response Effects 0.000 description 3
230000008094 contradictory effect Effects 0.000 description 2
230000001105 regulatory effect Effects 0.000 description 2
239000004065 semiconductor Substances 0.000 description 2
229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
239000004642 Polyimide Substances 0.000 description 1
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
238000005513 bias potential Methods 0.000 description 1
239000012267 brine Substances 0.000 description 1
239000000919 ceramic Substances 0.000 description 1
238000007599 discharging Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000011810 insulating material Substances 0.000 description 1
239000002609 medium Substances 0.000 description 1
238000000034 method Methods 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
235000012149 noodles Nutrition 0.000 description 1
229920001721 polyimide Polymers 0.000 description 1
229920000642 polymer Polymers 0.000 description 1
239000010453 quartz Substances 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Plasma & Fusion (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Drying Of Semiconductors (AREA)
Jigs For Machine Tools (AREA)

TW111112790A 2021-04-09 2022-04-01 靜電吸盤及基板處理裝置 TW202306020A (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2021066278		2021-04-09
JP2021-066278		2021-04-09

Publications (1)

Publication Number	Publication Date
TW202306020A true TW202306020A (zh)	2023-02-01

Family

ID=83546080

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW111112790A TW202306020A (zh)	2021-04-09	2022-04-01	靜電吸盤及基板處理裝置

Country Status (4)

Country	Link
JP (1)	JP7378668B2 (ja)
KR (1)	KR20230169071A (ja)
TW (1)	TW202306020A (ja)
WO (1)	WO2022215633A1 (ja)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP5269335B2 (ja)	2007-03-30	2013-08-21	東京エレクトロン株式会社	プラズマ処理装置
JP5443565B2 (ja) *	2012-09-03	2014-03-19	東京エレクトロン株式会社	プラズマ処理装置
JP5798677B2 (ja) *	2014-10-29	2015-10-21	東京エレクトロン株式会社	基板処理装置及び基板処理方法
JP6424700B2 (ja)	2015-03-26	2018-11-21	住友大阪セメント株式会社	静電チャック装置
CN111684574B (zh)	2018-02-20	2023-09-05	住友大阪水泥股份有限公司	静电卡盘装置及静电卡盘装置的制造方法

2022
- 2022-03-30 JP JP2023512988A patent/JP7378668B2/ja active Active
- 2022-03-30 WO PCT/JP2022/016272 patent/WO2022215633A1/ja active Application Filing
- 2022-03-30 KR KR1020237027246A patent/KR20230169071A/ko unknown
- 2022-04-01 TW TW111112790A patent/TW202306020A/zh unknown

Also Published As

Publication number	Publication date
KR20230169071A (ko)	2023-12-15
JP7378668B2 (ja)	2023-11-13
WO2022215633A1 (ja)	2022-10-13
JPWO2022215633A1 (ja)	2022-10-13

Publication	Publication Date	Title
KR102430205B1 (ko)	2022-08-05	플라즈마 처리 장치
JP2018110216A (ja)	2018-07-12	プラズマ処理装置
US20240194458A1 (en)	2024-06-13	Substrate support and plasma processing apparatus
JP7373963B2 (ja)	2023-11-06	基板支持器及びプラズマ処理装置
TW202306020A (zh)	2023-02-01	靜電吸盤及基板處理裝置
TW202331781A (zh)	2023-08-01	電漿處理裝置
JP2022171027A (ja)	2022-11-11	基板支持部及び処理装置
JP2023088520A (ja)	2023-06-27	プラズマエッチング処理装置及び上部電極
JP2023003957A (ja)	2023-01-17	プラズマ処理装置及び基板支持部
WO2023095707A1 (ja)	2023-06-01	静電チャック及びプラズマ処理装置
WO2024038785A1 (ja)	2024-02-22	静電チャック及び基板処理装置
WO2023074475A1 (ja)	2023-05-04	プラズマ処理装置及び静電チャック
WO2023058475A1 (ja)	2023-04-13	プラズマ処理装置
JP2024011192A (ja)	2024-01-25	基板支持器及びプラズマ処理装置
US20240079215A1 (en)	2024-03-07	Substrate processing apparatus
US20230073711A1 (en)	2023-03-09	Substrate support assembly and plasma processing apparatus
JP2024013617A (ja)	2024-02-01	基板処理装置
JP2023165222A (ja)	2023-11-15	静電チャック、基板支持アセンブリ、及びプラズマ処理装置
JP2024017868A (ja)	2024-02-08	基板処理装置及びリングアセンブリ
JP2024030838A (ja)	2024-03-07	プラズマ処理装置
JP2023004431A (ja)	2023-01-17	プラズマ処理装置
JP2023002461A (ja)	2023-01-10	基板処理装置及び静電チャック
TW202107950A (zh)	2021-02-16	電漿處理方法及電漿處理裝置
TW202306072A (zh)	2023-02-01	基板處理裝置及靜電吸盤
KR20240107335A (ko)	2024-07-09	정전 척 및 플라즈마 처리 장치