TW202303719A - 半導體裝置的製造方法及切割晶粒接合一體型膜 - Google Patents
半導體裝置的製造方法及切割晶粒接合一體型膜 Download PDFInfo
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Abstract
本發明揭示一種切割晶粒接合一體型膜。該切割晶粒接合一體型膜具備:切割膜,其包含基材層及設置於基材層上之由紫外線固化型黏著劑組成之黏著劑層;及接著劑層,其設置於切割膜的黏著劑層上。在溫度23℃下以剝離角度30°及剝離速度600mm/分鐘的條件測量之、黏著劑層的相對於接著劑層的黏著力為15N/25mm以上。
Description
本發明有關一種半導體裝置的製造方法及切割晶粒接合一體型膜。
半導體裝置藉由以下步驟來製造。首先,在晶圓上貼附切割用黏著膜之狀態實施切割步驟。其後,實施擴展步驟、拾取步驟、晶粒接合步驟等。
在半導體裝置的製造製程中,使用稱作切割晶粒接合一體型膜之膜。該膜具有依序積層了基材層、黏著劑層及接著劑層之結構,例如,以如下方式使用。首先,相對於晶圓貼附接著劑層側的面,並且在用切割環固定晶圓之狀態下切割晶圓。藉此,晶圓單片化為多個晶片。接著,藉由對黏著劑層照射紫外線而降低黏著劑層的相對於接著劑層的黏著力之後,將晶片與接著劑層單片化而成之接著劑片一併從黏著劑層上拾取。其後,藉由將晶片經由接著劑片而安裝於基板等之步驟來製造半導體裝置。另外,將由藉由切割步驟而獲得之晶片和附著於其上之接著劑片組成之積層體稱為附有接著劑片之晶片。
一直以來,作為晶圓及接著劑層的切割方法,基於刀片等的切割亦即刀片切割廣為人知。近年來,隨著半導體封裝件的高積體化及晶圓的薄化,隱形切割正在普及(參閱專利文獻1、2)。隱形切割係藉由雷射而在加工對象物的內部形成預定切割線之後,藉由沿著預定切割線來切割晶圓及接著劑層以獲得附有接著劑片之晶片之方法。
[專利文獻1]日本特開2002-192370號公報
[專利文獻2]日本特開2003-338467號公報
然而,在製造使用了被薄化的晶片之附有接著劑片之晶片時,存在成品率降低的問題。依據本發明人等的研究,發現在從黏著劑層上拾取附有接著劑片之晶片之前,在附有接著劑片之晶片的端部和黏著劑層之間,有時發生剝離。若發生這種剝離,則具有黏著劑層的剝離部分與氧接觸,在照射紫外線時,黏著力不會充分降低,並且拾取性降低之傾向。
又,在晶片上形成對準標志,從黏著劑層拾取附有接著劑片之晶片之裝置,藉由識別該對準標志,來特定所拾取之附有接著劑片之晶片的位置。因此,若發生這種剝離,可能會導致黏著劑層的剝離之部分變色,而無法特定所拾取之附有接著劑片之晶片的位置,拾取性降低。
因此,本發明提供一種能夠抑制拾取性降低之切割晶粒接合一體型膜。又,本發明提供一種使用了這種切割晶粒接合一體型膜之半導體裝置的製造方法。
本發明的一方面有關一種半導體裝置的製造方法。該半導體裝置的製造方法包括以下步驟。
(A)準備切割晶粒接合一體型膜之步驟(準備步驟),該切割晶粒接合一體型膜具備:切割膜,其包含基材層及設置於基材層上之由紫外線固化型黏著劑組成之黏著劑層;及接著劑層,其設置於切割膜的黏著劑層上
(B)切割晶圓之步驟(切割步驟)
(C)對切割晶粒接合一體型膜的接著劑層貼附晶圓之步驟(晶圓貼附步驟)
(D)藉由在冷卻條件下擴展基材層而獲得晶圓及接著劑層單片化而成之附有接著劑片之晶片之步驟(冷卻擴展步驟)
(E)藉由對黏著劑層照射紫外線而降低黏著劑層的相對於附有接著劑片之晶片的黏著力之步驟(紫外線照射步驟)
(F)從黏著劑層上拾取附有接著劑片之晶片之步驟(拾取步驟)
(G)將所拾取之附有接著劑片之晶片安裝於基板或其他晶片上之步驟(安裝步驟)
在(A)步驟中準備之切割晶粒接合一體型膜中,在溫度23℃下以剝離角度30°及剝離速度600mm/分鐘的條件測量之、黏著劑層的相對於接著劑層的黏著力為15N/25mm以上。
依據這種半導體裝置的製造方法,能夠藉由使用具有規定的黏著力之切割晶粒接合一體型膜而在從黏著劑層上拾取附有接著劑片之晶片之前(在(F)步驟之前),抑制在附有接著劑片之晶片的端部與黏著劑層之間發生剝離,並且能夠抑制拾取性的降低。藉此,能夠以充分高的成品率製造半導體裝置。
在(A)步驟中準備之切割晶粒接合一體型膜中,在對黏著劑層照射照度70mW/cm
2及照射量150mJ/cm
2的紫外線之後,在溫度23℃下以剝離角度30°及剝離速度600mm/分鐘的條件測量之、照射紫外線後的黏著劑層的相對於接著劑層的黏著力可以為1N/25mm以下。
在(A)步驟中準備之切割晶粒接合一體型膜中,切割膜在-15℃下的儲存模數可以為100MPa以上。藉由使用具有規定的儲存模數之切割膜,在冷卻擴展步驟((D)步驟)中,藉由擴展時的衝擊及應力,而具有附有接著劑片之晶片的外周部的接著劑斷裂並且變得容易分割成各個附有接著劑片之晶片之傾向。
本發明的另一方面有關一種切割晶粒接合一體型膜。該切割晶粒接合一體型膜具備:切割膜,其包含基材層及設置於基材層上之由紫外線固化型黏著劑組成之黏著劑層;及接著劑層,其設置於切割膜的黏著劑層上。在溫度23℃下以剝離角度30°及剝離速度600mm/分鐘的條件下測量之、黏著劑層的相對於接著劑層的黏著力為15N/25mm以上。在對黏著劑層照射照度70mW/cm
2及照射量150mJ/cm
2的紫外線之後,在溫度23℃下以剝離角度30°及剝離速度600mm/分鐘的條件測量之、照射紫外線後的黏著劑層的相對於接著劑層的黏著力可以為1N/25mm以下。切割膜在-15℃下的儲存模數可以為100MPa以上。
[發明效果]
依據本發明,提供一種能夠抑制拾取性的低下之切割晶粒接合一體型膜。又,依本發明,提供一種使用了這種切割晶粒接合一體型膜之半導體裝置的製造方法。
以下,參照圖示並對本發明的實施形態進行詳細說明。其中,本發明並不限定於以下實施形態。
在本說明書中,使用“~”表示之數值範圍表示將記載於“~”前後之數值分別作為最小值及最大值而包含之範圍。在本說明書中階段性記載之數值範圍中,某階段的數值範圍的上限值或下限值,能夠替換為其他階段的數值範圍的上限值或下限值。又,在本說明書中所記載之數值範圍中,其數值範圍的上限值或下限值可以替換為實施例中所示出之值。又,分別記載之上限值及下限值能夠任意組合。又,在本說明書中,“(甲基)丙烯酸酯”係指,丙烯酸酯及與其對應之甲基丙烯酸酯中的至少一者。在“(甲基)丙烯醯”,“(甲基)丙烯酸”等其他類似表述中亦相同。又,“(聚)”表示存在和不存在“聚”的前綴這兩種情況。又,“A或B”只要包含A及B中的任一者即可,亦可以包含兩者。又,以下例示之材料只要沒有特別指定,則可以單獨使用1種,亦可以組合2種以上來使用。在組成物中相當於各成分之物質存在複數個之情況下,只要沒有特別指定,組成物中的各成分的含量則表示存在於組成物中之該複數個物質的合計量。
[切割晶粒接合一體型膜]
圖1(a)係表示切割晶粒接合一體型膜的一實施形態之俯視圖,圖1(b)係沿著圖1(a)所示的B-B線之示意剖面圖。切割晶粒接合一體型膜10(以下,依據情況簡稱為“膜10”。)能夠較佳地使用於包含(A)步驟~(G)步驟之半導體裝置的製造製程。
膜10具備包含基材層1及設置於基材層1上之由紫外線固化型黏著劑組成之黏著劑層3之切割膜7和設置於切割膜7的黏著劑層3上之接著劑層5。膜10依序具備基材層1、由紫外線固化型黏著劑組成之黏著劑層3及接著劑層5。在本實施形態中,例示出在正方形的基材層1上形成了1個黏著劑層3及接著劑層5的積層體之態樣,但可以係基材層1具有規定的長度(例如,100m以上),並且黏著劑層3及接著劑層5的積層體以沿著其長度方向排列之方式以規定的間隔配置之態樣。
<切割膜>
切割膜7包含基材層1及設置於基材層1上之由紫外線固化型黏著劑組成之黏著劑層3。
(黏著劑層)
黏著劑層3的相對於接著劑層5的(照射紫外線前的)的黏著力為15N/25mm以上。該黏著力係在溫度23℃下以剝離角度30°及剝離速度600mm/分鐘的條件下測量之30°剝離強度。圖2係示意性地表示測量黏著劑層的相對於接著劑層的30°剝離強度之狀態的剖面圖。如圖2所示,在支撐板80上固定測量試樣(寬度25mm×長度100mm)的接著劑層5之狀態下測量黏著劑層3的30°剝離強度。若黏著劑層3的相對於接著劑層5的黏著力(30°剝離強度)在這種範圍內,則能夠在從黏著劑層上拾取附有接著劑片之晶片之前(在(F)步驟之前)抑制在附有接著劑片之晶片的端部與黏著劑層之間發生剝離,並且能夠抑制拾取性的降低。藉此,能夠以充分高的成品率製造半導體裝置。黏著劑層3的相對於接著劑層5的黏著力可以為16N/25mm以上、18N/25mm以上、或20N/25mm以上。黏著劑層3的相對於接著劑層5的黏著力例如可以為30N/25mm以下。
對黏著劑層3照射照度70mW/cm
2及照射量150mJ/cm
2的紫外線(主波長:365nm)後的照射紫外線後的黏著劑層3的相對於接著劑層5的黏著力可以為1N/25mm以下,亦可以為0.9N/25mm以下。若照射紫外線後的黏著劑層3的相對於接著劑層5的黏著力在這種範圍內,則能夠實現優異的拾取性。照射紫外線後的黏著劑層3的相對於接著劑層5的黏著力可以為0.2N/25mm以上、0.4N/25mm以上、或0.6N/25mm以上。另外,該黏著力與上述相同,係在溫度23℃下,在剝離角度30°及剝離速度600mm/分鐘的條件下測量之30°剝離強度(參閱圖2)。
在本實施形態中,例如,能夠藉由調整後述(甲基)丙烯酸系樹脂A中的可鏈聚合之官能基的含量(導入官能基之化合物的含量),用於交聯(甲基)丙烯酸系樹脂A之交聯劑的含量等,或者,例如藉由添加其他樹脂(丙烯酸單體或寡聚物、胺基甲酸酯單體或寡聚物等)、黏著性賦予劑(增黏劑等)等來調整黏著劑層3的相對於接著劑層5的黏著力及照射紫外線後的黏著劑層3的相對於接著劑層5的黏著力。
黏著劑層3例如由包含具有可鏈聚合之官能基之(甲基)丙烯酸系樹脂(在本說明書中,有時稱為“(甲基)丙烯酸系樹脂A”。)及光聚合起始劑之紫外線固化型黏著劑組成。關於(甲基)丙烯酸系樹脂A,其至少一部分可以被交聯劑交聯。以下,對含有紫外線固化型黏著劑之成分進行詳細說明。
·具有可鏈聚合之官能基之(甲基)丙烯酸系樹脂
紫外線固化型黏著劑可以包含(甲基)丙烯酸系樹脂A。在包含這種(甲基)丙烯酸系樹脂A之情況下,官能基可以係選自丙烯醯基及甲基丙烯醯基中的至少一種。(甲基)丙烯酸系樹脂中的官能基的含量可以為1.0mmol/g以上,亦可以為1.1mmol/g以上或1.2mmol/g以上。若(甲基)丙烯酸系樹脂A中的官能基的含量為1.0mmol/g以上,則能夠在從黏著劑層上拾取附有接著劑片之晶片之前(在(F)步驟之前),抑制在附有接著劑片之晶片的端部與黏著劑層之間發生剝離,並且能夠抑制拾取性的降低。從拾取性的觀點考慮,(甲基)丙烯酸系樹脂A中的官能基的含量可以為1.5mmol/g以下。
(甲基)丙烯酸系樹脂A能夠藉由使具有選自羥基、環氧丙基(環氧基)、胺基等中的至少一種官能基之(甲基)丙烯酸系樹脂(以下,有時稱為“(甲基)丙烯酸系樹脂a”。)與後述之導入官能基之化合物進行反應而獲得。(甲基)丙烯酸系樹脂A亦可稱為(甲基)丙烯酸系樹脂a與導入官能基之化合物的反應物。
(甲基)丙烯酸系樹脂a能夠藉由公知的方法來合成。作為合成方法,例如,可以舉出溶液聚合法、懸浮聚合法、乳化聚合法、總體聚合法、析出聚合法、氣相聚合法、電漿聚合法、超臨界聚合法。又,作為聚合反應的種類,亦可以舉出諸如自由基聚合、陽離子聚合、陰離子聚合、活性自由基聚合、活性陽離子聚合、活性陰離子聚合、配位聚合、永生聚合等其他ATRP(原子移動自由基聚合)及RAFT(可逆加成裂解鏈轉移聚合)等方法。其中,藉由使用溶液聚合法進行自由基聚合來合成,除了經濟性好、反應速率快、容易聚合控制等以外,還具有能夠直接使用藉由聚合而獲得之樹脂溶液來進行配合等優點。
其中,以藉由使用溶液聚合法進行自由基聚合來獲得(甲基)丙烯酸系樹脂a之方法為例,對(甲基)丙烯酸系樹脂a的合成法進行詳細說明。
作為合成(甲基)丙烯酸系樹脂a時使用之單體,只要係在一個分子中具有1個(甲基)丙烯醯基者,則並無特別限制。作為其具體例,可以舉出甲基丙烯酸甲酯、乙基(甲基)丙烯酸酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第三丁酯、丁氧基乙基(甲基)丙烯酸酯、異戊基(甲基)丙烯酸酯、己基(甲基)丙烯酸酯、2-乙基己基(甲基)丙烯酸酯、庚基(甲基)丙烯酸酯、辛基庚基(甲基)丙烯酸酯、壬基(甲基)丙烯酸酯、癸烷基(甲基)丙烯酸酯、十一烷基(甲基)丙烯酸酯、月桂基(甲基)丙烯酸酯、十三烷基(甲基)丙烯酸酯、十四烷基(甲基)丙烯酸酯、十五烷基(甲基)丙烯酸酯、十六烷基(甲基)丙烯酸酯、十八烷基(甲基)丙烯酸酯、二十二烷基(甲基)丙烯酸酯、甲氧基聚乙二醇(甲基)丙烯酸酯、乙氧基聚乙二醇(甲基)丙烯酸酯、甲氧基聚丙二醇(甲基)丙烯酸酯、乙氧基聚丙二醇(甲基)丙烯酸酯、單(2-(甲基)丙烯醯氧基乙基)琥珀酸酯等脂肪族(甲基)丙烯酸酯;環(甲基)丙烯酸戊酯、(甲基)丙烯酸環己酯、環(甲基)丙烯酸戊酯、二環戊烷基(甲基)丙烯酸酯、二環戊烯基(甲基)丙烯酸酯、異莰基(甲基)丙烯酸酯、單(2-(甲基)丙烯醯氧基乙基)四氫鄰苯二甲酸酯、單(2-(甲基)丙烯醯氧基乙基)六氫鄰苯二甲酸酯等脂環式(甲基)丙烯酸酯;苄基(甲基)丙烯酸酯、苯基(甲基)丙烯酸酯、鄰聯苯基(甲基)丙烯酸酯、1-萘基(甲基)丙烯酸酯、2-萘基(甲基)丙烯酸酯、苯氧基乙基(甲基)丙烯酸酯、對枯基苯氧基乙基(甲基)丙烯酸酯、鄰苯基苯氧基乙基(甲基)丙烯酸酯、1-萘氧基乙基(甲基)丙烯酸酯、2-萘氧基乙基(甲基)丙烯酸酯、苯氧基聚乙二醇(甲基)丙烯酸酯、壬基苯氧基聚乙二醇(甲基)丙烯酸酯、苯氧基聚丙二醇(甲基)丙烯酸酯、2-羥基-3-苯氧基丙基(甲基)丙烯酸酯、2-羥基-3-(鄰苯基苯氧基)丙基(甲基)丙烯酸酯、2-羥基-3-(1-萘氧基)丙基(甲基)丙烯酸酯、2-羥基-3-(2-萘氧基)丙基(甲基)丙烯酸酯等芳香族(甲基)丙烯酸酯;2-四氫糠基(甲基)丙烯酸酯、N-(甲基)丙烯醯氧基乙基六氫鄰苯二甲醯亞胺、2-(甲基)丙烯醯氧基乙基-N-咔唑等雜環式(甲基)丙烯酸酯、該等己內酯變性體、ω-羧基-聚己內酯單(甲基)丙烯酸酯、環氧丙基(甲基)丙烯酸酯、α-乙基環氧丙基(甲基)丙烯酸酯、α-丙基環氧丙基(甲基)丙烯酸酯、α-丁基環氧丙基(甲基)丙烯酸酯、2-甲基環氧丙基(甲基)丙烯酸酯、2-乙基環氧丙基(甲基)丙烯酸酯、2-丙基環氧丙基(甲基)丙烯酸酯、3,4-環氧基(甲基)丙烯酸丁酯、3,4-環氧基庚基(甲基)丙烯酸酯、α-乙基-6,7-環氧基庚基(甲基)丙烯酸酯、3,4-環氧基環己基甲基丙烯酸甲酯、鄰乙烯基芐基環氧丙基醚、間乙烯基芐基環氧丙基醚、對乙烯基芐基環氧丙基醚等具有乙烯性不飽和基和環氧基之化合物;(2-乙基-2-氧雜環丁烷基)甲基丙烯酸甲酯、(2-甲基-2-氧雜環丁烷基)甲基丙烯酸甲酯、2-(2-乙基-2-氧雜環丁烷基)乙基(甲基)丙烯酸酯、2-(2-甲基-2-氧雜環丁烷基)乙基(甲基)丙烯酸酯、3-(2-乙基-2-氧雜環丁烷基)丙基(甲基)丙烯酸酯、3-(2-甲基-2-氧雜環丁烷基)丙基(甲基)丙烯酸酯等具有乙烯性不飽和基和氧環丁烷基之化合物;2-(甲基)丙烯醯氧基乙基異氰酸酯等具有乙烯性不飽和基和異氰酸酯基之化合物;2-羥基乙基(甲基)丙烯酸酯、2-羥基丙基(甲基)丙烯酸酯、4-羥基(甲基)丙烯酸丁酯、3-氯-2-羥基丙基(甲基)丙烯酸酯、2-羥基(甲基)丙烯酸丁酯等具有乙烯性不飽和基和羥基之化合物。能夠藉由將該等適當組合而獲得作為目標的(甲基)丙烯酸系樹脂a。
(甲基)丙烯酸系樹脂a具有選自羥基、環氧丙基(環氧基)、胺基等中的至少一種官能基作為後述之導入官能基之化合物或與交聯劑的反應點。作為用於合成具有羥基之(甲基)丙烯酸系樹脂a之單體,例如,可以舉出2-羥基乙基(甲基)丙烯酸酯、2-羥基丙基(甲基)丙烯酸酯、4-羥基(甲基)丙烯酸丁酯、3-氯-2-羥基丙基(甲基)丙烯酸酯、2-羥基(甲基)丙烯酸丁酯等具有乙烯性不飽和基和羥基之化合物等。
作為用於合成具有環氧丙基之(甲基)丙烯酸系樹脂a之單體,可以舉出環氧丙基(甲基)丙烯酸酯、α-乙基環氧丙基(甲基)丙烯酸酯、α-丙基環氧丙基(甲基)丙烯酸酯、α-丁基環氧丙基(甲基)丙烯酸酯、2-甲基環氧丙基(甲基)丙烯酸酯、2-乙基環氧丙基(甲基)丙烯酸酯、2-丙基環氧丙基(甲基)丙烯酸酯、3,4-環氧基(甲基)丙烯酸丁酯、3,4-環氧基庚基(甲基)丙烯酸酯、α-乙基-6,7-環氧基庚基(甲基)丙烯酸酯、3,4-環氧基環己基甲基丙烯酸甲酯、鄰乙烯基芐基環氧丙基醚、間乙烯基芐基環氧丙基醚、對乙烯基芐基環氧丙基醚等具有乙烯性不飽和基和環氧基之化合物。
(甲基)丙烯酸系樹脂A包含可鏈聚合之官能基。可鏈聚合之官能基例如係選自丙烯醯基及甲基丙烯醯基中的至少一種。可鏈聚合之官能基例如能夠藉由使具有選自如上所述之方式合成之羥基、環氧丙基(環氧基)、胺基等中的至少一種的官能基之(甲基)丙烯酸系樹脂a和以下化合物(導入官能基之化合物)反應而導入到該(甲基)丙烯酸系樹脂a中。作為導入官能基之化合物的具體例,可以舉出:2-甲基丙烯醯氧基乙基異氰酸酯、α,α-二甲基-4-異丙烯基芐基異氰酸酯、烯丙基異氰酸酯、1,1-(雙丙烯醯氧基甲基)乙基異氰酸酯;藉由二異氰酸酯化合物或聚異氰酸酯化合物和羥基乙基(甲基)丙烯酸酯或4-羥基丁基乙基(甲基)丙烯酸酯進行反應而獲得之丙烯醯單異氰酸酯化合物;藉由二異氰酸酯化合物或聚異氰酸酯化合物、多元醇化合物、羥基乙基(甲基)丙烯酸酯進行反應而獲得之丙烯醯單異氰酸酯化合物等。在該等中,導入官能基之化合物可以係2-甲基丙烯醯氧基乙基異氰酸酯。
(甲基)丙烯酸系樹脂A可以主要以選自羥基、環氧丙基(環氧基)、胺基等中的至少一種官能基作為反應點,其反應點中的一部分藉由交聯劑而交聯。亦即,(甲基)丙烯酸系樹脂A中的至少一部分可以藉由交聯劑而交聯。紫外線固化型黏著劑可以包含具有可鏈聚合之官能基之、藉由交聯劑而交聯之(甲基)丙烯酸系樹脂作為(甲基)丙烯酸系樹脂A。
交聯劑例如以控制黏著劑層的儲存模數和/或黏著性為目的來使用。交聯劑只要係在一個分子中具有2個以上官能基之化合物即可,該官能基能夠與選自(甲基)丙烯酸系樹脂A所具有之羥基、環氧丙基、胺基等中的至少一種官能基進行反應。作為藉由(甲基)丙烯酸系樹脂A和交聯劑的反應而形成之鍵,例如,可以舉出酯鍵、醚鍵、醯胺鍵、醯亞胺鍵、胺基甲酸酯鍵、脲鍵等。
交聯劑例如可以係在一個分子中具有2個以上的異氰酸酯基之多官能異氰酸酯。若使用這種多官能異氰酸酯,則能夠容易與(甲基)丙烯酸系樹脂A所具有之羥基、環氧丙基、胺基等進行反應,形成牢固的交聯結構。
作為在一個分子中具有2個以上的異氰酸酯基之多官能異氰酸酯,例如,可以舉出2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、1,3-二甲苯二異氰酸酯、1,4-二甲苯二異氰酸酯、二苯基甲烷-4,4’-二異氰酸酯、二苯基甲烷-2,4’-二異氰酸酯、3-甲基二苯基甲烷二異氰酸酯、六亞甲基二異氰酸酯、異佛爾酮二異氰酸酯、二環己基甲烷-4,4’-二異氰酸酯、二環己基甲烷-2,4’-二異氰酸酯、離胺酸異氰酸酯等異氰酸酯化合物等。
交聯劑可以係多官能異氰酸酯和在一個分子中具有2個以上的羥基之多元醇的反應物(含有異氰酸酯基之寡聚物)。作為在一個分子中具有2個以上的羥基之多元醇,例如,可以舉出乙二醇、丙二醇、丁二醇、1,6-己二醇、1,8-辛二醇、1,9-壬二醇、1,10-癸二醇、1,11-十一烷二醇、1,12-十二烷二醇、甘油、三羥甲基丙烷、新戊四醇、二新戊四醇、1,4-環己二醇、1,3-環己二醇等。
在該等中,交聯劑可以係在一個分子中具有2個以上的異氰酸酯基之多官能異氰酸酯和在一個分子中具有3個以上的羥基之多元醇的反應物(含有異氰酸酯基之寡聚物)。藉由將含有這種異氰酸酯基之寡聚物用作交聯劑,黏著劑層3形成緻密的交聯結構,藉此,具有能夠在拾取步驟中抑制黏著劑附著於接著劑層5之傾向。
使(甲基)丙烯酸系樹脂A與交聯劑反應時的交聯劑的含量能夠依據對黏著劑層求出之凝聚力、斷裂伸長率、與接著劑層的黏附性等來適當設定。具體而言,交聯劑的含量相對於(甲基)丙烯酸系樹脂A的總量100質量份,例如可以為0.1~10質量份,0.2~7質量份或0.3~5質量份。若交聯劑的含量在這種範圍內,則能夠平衡性良好地兼顧切割步驟中對黏著劑層要求之特性、以及在晶粒接合步驟中對黏著劑層要求之特性,並且亦能夠獲得優異的拾取性。
若交聯劑的含量相對於(甲基)丙烯酸系樹脂A的總量100質量份為0.1質量份以上,則具有不易使交聯結構的形成變得不充分,並且在拾取步驟中充分降低與接著劑層的界面密接力,而在拾取時不易產生不良之傾向。另一方面,若交聯劑的含量相對於(甲基)丙烯酸系樹脂A的總量100質量份為10質量份以下,則不易使黏著劑層變得過硬,在擴展步驟中具有晶片不易剝離之傾向。
(甲基)丙烯酸系樹脂A可以係紫外線固化型黏著劑(或黏著劑層3)的主成分。(甲基)丙烯酸系樹脂A的含量以紫外線固化型黏著劑(或黏著劑層3)的總量為基準,可以為80質量%以上、85質量%以上、90質量%以上、95質量%以上或98質量%以上。
·光聚合起始劑
光聚合起始劑只要係能夠藉由照射紫外線而發生鏈聚合之活性種,則並無特別限制。作為光聚合起始劑,例如,可以舉出光自由基聚合起始劑等。其中,可鏈聚合之活性種表示藉由與可鏈聚合之官能基反應而開始聚合反應者。
作為光自由基聚合起始劑,例如,可以舉出2,2-二甲氧基-1,2-二苯基乙烷-1-酮等苯偶姻縮酮;1-羥基環己基苯基甲酮、2-羥基-2-甲基-1-苯基丙烷-1-酮、1-[4-(2-羥基乙氧基)苯基]-2-羥基-2-甲基-1-丙烷-1-酮等α-羥基酮;2-芐基-2-二甲胺基-1-(4-嗎啉代苯基)-丁烷-1-酮、1,2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉代丙烷-1-酮等α-胺基酮;1-[4-(苯硫基)苯基]-1,2-辛二酮-2-(苯甲醯基)肟等肟酯;雙(2,4,6-三甲基苯甲醯基)苯基氧化膦、雙(2,6-二甲氧基苯甲醯基)-2,4,4-三甲基戊基氧化膦、2,4,6-三甲基苯甲醯基二苯基氧化膦等氧化膦;2-(鄰氯苯基)-4,5-二苯基咪唑二聚體、2-(鄰氯苯基)-4,5-二(甲氧基苯基)咪唑二聚體、2-(鄰氟苯基)-4,5-二苯基咪唑二聚體、2-(鄰甲氧基苯基)-4,5-二苯基咪唑二聚體、2-(對甲氧基苯基)-4,5-二苯基咪唑二聚體等2,4,5-三芳基咪唑二聚體;二苯甲酮、N,N,N’,N’-四甲基-4,4’-二氨基二苯甲酮、N,N,N’,N’-四乙基-4,4’-二氨基二苯甲酮、4-甲氧基-4’-二甲胺基二苯甲酮等二苯基酮化合物;2-乙基蒽醌、菲醌、2-第三丁基蒽醌、八甲基蒽醌、1,2-苯蒽醌、2,3-苯蒽醌、2-苯基蒽醌、2,3-二苯基蒽醌、1-氯蒽醌、2-甲基蒽醌、1,4-萘醌、9,10-菲醌、2-甲基-1,4-萘醌、2,3-二甲基蒽醌等醌化合物;安息香甲醚、安息香***、安息香苯醚等安息香醚;安息香、甲基安息香、乙基安息香等安息香化合物;苄基二甲基縮酮等芐基化合物;9-苯吖啶、1,7-雙(9,9’-吖啶基庚烷)等吖啶化合物;N-苯甘胺酸、香豆素等。
紫外線固化型黏著劑中的光聚合起始劑的含量相對於(甲基)丙烯酸系樹脂A的總量100質量份,可以為0.1~30質量份、0.3~10質量份或0.5~5質量份。若光聚合起始劑的含量相對於(甲基)丙烯酸系樹脂A的總量100質量份為0.1質量份以上,則具有不易使黏著劑層在照射紫外線後充分地固化,並且不易引起拾取不良之傾向。若光聚合起始劑的含量相對於(甲基)丙烯酸系樹脂A的總量100質量份為30質量份以下,則具有能夠防止對接著劑層的污染(向光聚合起始劑的接著劑層轉印)之傾向。
紫外線固化型黏著劑可以包含其他成分。作為其他成分,例如,可以舉出除了具有可鏈聚合之官能基之(甲基)丙烯酸系樹脂以外的樹脂(丙烯酸單體或寡聚物、胺基甲酸酯單體或寡聚物等)、黏著性賦予劑(增黏劑等)等。
黏著劑層3的厚度只要依據擴展步驟的條件(溫度、張力等)適當設定即可,例如,可以係1~100μm,2~50μm,3~20μm或5~15μm。若黏著劑層3的厚度為1μm以上,則黏著性不易變得不充分,若為100μm以下,則在擴展時截口寬度變寬(銷上推時不發生應力鬆弛),具有拾取不易變得不充分之傾向。
黏著劑層3形成於基材層1上。作為黏著劑層3的形成方法,能夠採用公知的方法。例如,可以藉由雙層擠壓法形成基材層1與黏著劑層3的積層體,亦可以製備紫外線固化型黏著劑的清漆(黏著劑層形成用清漆),將其塗敷於基材層1的表面上,或者在被脫模處理之膜上形成黏著劑層3,將其轉印到基材層1上。
紫外線固化型黏著劑的清漆(黏著劑層形成用清漆)可以係能夠溶解(甲基)丙烯酸系樹脂A、光聚合起始劑及交聯劑之有機溶劑且藉由加熱而揮發者。作為有機溶劑的具體例,可以舉出甲苯、二甲苯、均三甲苯、異丙苯、對繖花烴等芳香族烴;四氫呋喃、1,4-二㗁烷等環狀醚;甲醇、乙醇、異丙醇、丁醇、乙二醇、丙二醇等醇;丙酮、甲乙酮、甲基異丁基酮、環己酮、4-羥基-4-甲基-2-戊酮等酮;乙酸甲酯、乙酸乙酯、乙酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁內酯等酯;伸乙基碳酸酯、伸丙基碳酸酯等碳酸酯;乙二醇單甲醚、乙二醇單***、乙二醇單丁醚、乙二醇二甲醚、乙二醇二***、丙二醇單甲醚、丙二醇單***、丙二醇二甲醚、丙二醇二***、二乙二醇單甲醚、二乙二醇單***、二乙二醇單丁醚、二乙二醇二甲醚、二乙二醇二***等多元醇烷基醚;乙二醇單甲醚乙酸酯、乙二醇單***乙酸酯、乙二醇單丁醚乙酸酯、丙二醇單甲醚乙酸酯、丙二醇單***乙酸酯、二乙二醇單甲醚乙酸酯、二乙二醇單***乙酸酯等多元醇烷基醚乙酸酯;N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基-2-吡咯啶酮等醯胺等。
在該等中,從溶解性及沸點的觀點考慮,有機溶劑例如可以係選自由甲苯、甲醇、乙醇、異丙醇、丙酮、甲乙酮、甲基異丁基酮、環己酮、乙酸甲酯、乙酸乙酯、乙酸丁酯、乙二醇單甲醚、乙二醇單***、丙二醇單甲醚、丙二醇單***、二乙二醇二甲醚、乙二醇單甲醚乙酸酯、丙二醇單甲醚乙酸酯及N,N-二甲基乙醯胺組成的組中的至少一種。清漆的固體成分濃度通常為10~60質量%。
(基材層)
基材層1能夠使用公知的聚合物片或膜,只要係能夠在低溫條件下實施擴展步驟者,則並沒有特別限制。作為基材層1的具體例,可以舉出結晶性聚丙烯、無定形聚丙、高密度聚乙烯、中密度聚乙烯、低密度聚乙烯、超低密度聚乙烯、低密度直鏈聚乙烯、聚丁烯、聚甲基戊烯等聚烯烴、乙烯-乙酸乙烯基共聚物、離聚物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚胺基甲酸酯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯硫醚、芳醯胺(紙)、玻璃、玻璃布、氟樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素系樹脂、矽酮樹脂或在該等中混合了塑化劑之混合物,或者藉由電子束照射而實施交聯之固化物。
基材層1具有以選自由聚乙烯、聚丙烯、聚乙烯-聚丙烯無規共聚物及聚乙烯-聚丙烯嵌段共聚物組成的組中的至少一種樹脂作為主成分之表面,亦可以係該表面與黏著劑層3接觸者。該等樹脂從楊氏模量、應力鬆弛性、熔點等特性、價格方面、使用後的廢料回收等觀點考慮,亦可以成為良好的基材。基材層1可以係單層,亦可以根據需要具有由不同的材質組成之層積層而得之多層結構。從控制與黏著劑層3的黏附性之觀點考慮,基材層1可以對其表面實施消光處理、電暈處理等表面粗糙化處理。
基材層1的厚度例如可以為10~200μm或20~170μm。
切割膜7(包含基材層1及設置於基材層1上之由紫外線固化型黏著劑組成之黏著劑層3之切割膜7)在-15℃下的儲存模數可以為100MPa以上。若切割膜7在-15℃下的儲存模數在這種範圍內,則在冷卻擴展步驟((D)步驟)中,藉由擴展時的衝擊及應力,而具有附有接著劑片之晶片的外周部的接著劑斷裂,並且變得容易分割成各個附有接著劑片之晶片之傾向。切割膜7在-15℃下的儲存模數可以為300MPa以上或500MPa以上。切割膜7在-15℃下的儲存模數例如可以為1000MPa以下。另外,儲存模數表示藉由基於以下裝置及條件之測量而獲得之值。
·動態黏彈性測量裝置:Rheogel E-4000(Universal Building Materials Co.,Ltd.製造)
·測量對象:紫外線固化型黏著劑的膜狀成形物(切割膜)(寬度:4mm,長度:40mm)
·升溫速度:3℃/分鐘
·頻率:1Hz
·夾頭間的距離:20mm
·負載條件:自動靜負載
<接著劑層>
在接著劑層5中,能夠應用構成公知的晶粒接合膜之接著劑組成物。具體而言,構成接著劑層5之接著劑組成物可以包含環氧樹脂、環氧樹脂固化劑及含有反應性基之(甲基)丙烯酸共聚物。包含接著劑層5之接著劑組成物可以進一步包含固化促進劑及填充劑。依據包含該等成分之接著劑層5,存在具有如下特徵之傾向:晶片/基板之間、晶片/晶片之間的接著性優異,又,亦能夠賦予電極植入性、導線植入性等,並且在晶粒接合步驟中,能夠在低溫下接合,可在短時間內得到優異的固化,用密封劑成形後具有優異的可靠性等。
作為環氧樹脂,例如,可以舉出雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、脂環式環氧樹脂、脂肪族鏈狀環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、雙酚A酚醛清漆型環氧樹脂、雙酚的二縮水甘油醚化物、萘二醇的二縮水甘油醚化物、酚類二縮水甘油醚化物、醇類的二縮水甘油醚化物及該等烷基取代體、鹵化物、加氫物等二官能環氧樹脂、酚醛清漆型環氧樹脂等。又,可以應用多官能環氧樹脂、含雜環環氧樹脂等通常已知的其他環氧樹脂。另外,在不損害特性的範圍內,除了環氧樹脂以外的成分,還可以作為雜質而包含。
作為環氧樹脂固化劑,例如,可以舉出能夠在沒有觸媒或在氧觸媒的存在下,使酚化合物和2價的連結基亦即二甲苯化合物反應而獲得之酚樹脂等。作為製造酚樹脂時所使用之酚化合物,例如,可以舉出苯酚、鄰甲酚、間甲酚、對甲酚、鄰乙基苯酚、對乙基苯酚、鄰正丙基苯酚、間正丙基苯酚、對正丙基苯酚、鄰異丙基苯酚、間異丙基苯酚、對異丙基苯酚、鄰正丁基苯酚、間正丁基苯酚、對正丁基苯酚、鄰異丁基苯酚、間異丁基苯酚、對異丁基苯酚、辛基苯酚、壬基苯酚、2,4-二甲苯酚、2,6-二甲苯酚、3,5-二甲苯酚、2,4,6-三甲基苯酚、間苯二酚、鄰苯二酚、氫醌、4-甲氧基苯酚、鄰苯基苯酚、間苯基苯酚、對苯基苯酚、對環己基苯酚、鄰烯丙基苯酚、對烯丙基苯酚、鄰芐基苯酚、對芐基苯酚、鄰氯苯酚、對氯苯酚、鄰溴苯酚、對溴苯酚、鄰碘苯酚、對碘苯酚、鄰氟苯酚、間氟苯酚、對氟苯酚等。作為在製造酚樹脂時所使用之2價的連結基亦即二甲苯化合物,能夠使用以下示出之二甲苯二鹵化物、二甲苯二乙二醇及其衍生物。亦即,作為二甲苯化合物的具體例,可以舉出α,α’-二氯-對二甲苯、α,α’-二氯-間二甲苯、α,α’-二氯-鄰二甲苯、α,α’-二溴-對二甲苯、α,α’-二溴-間二甲苯、α,α’-二溴-鄰二甲苯、α,α’-二碘-對二甲苯、α,α’-二碘-間二甲苯、α,α’-二碘-鄰二甲苯、α,α’-二羥基-對二甲苯、α,α’-二羥基-間二甲苯、α,α’-二羥基-鄰二甲苯、α,α’-二甲氧基-對二甲苯、α,α’-二甲氧基-間二甲苯、α,α’-二甲氧基-鄰二甲苯、α,α’-二乙氧基-對二甲苯、α,α’-二乙氧基-間二甲苯、α,α’-二乙氧基-鄰二甲苯、α,α’-二-正丙氧基-對二甲苯、α,α’-二正丙氧基-間二甲苯、α,α’-二正丙氧基-鄰二甲苯、α,α’-二異丙氧基-對二甲苯、α,α’-二異丙氧基-間二甲苯、α,α’-二異丙氧基-鄰二甲苯、α,α’-二正丁氧基-對二甲苯、α,α’-二正丁氧基-間二甲苯、α,α’-二正丁氧基-鄰二甲苯、α,α’-二異丁氧基-對二甲苯、α,α’-二異丁氧基-間二甲苯、α,α’-二異丁氧基-鄰二甲苯、α,α’-二第三丁氧基-對二甲苯、α,α’-二第三丁氧基-間二甲苯、α,α’-二第三丁氧基-鄰二甲苯等。
在使酚化合物與二甲苯化合物進行反應時,能夠藉由使用鹽酸、硫酸、磷酸、聚磷酸等無機酸類;二甲基硫酸、二乙基硫酸、對甲苯磺酸、甲磺酸、乙烷磺酸等有機羧酸類;三氟甲磺酸等超強酸類;烷烴磺酸型離子交換樹脂等強酸性離子交換樹脂類;全氟烷烴磺酸型離子交換樹脂等超強酸性離子交換樹脂類(產品名稱:納菲,Nafion,Du Pont de Nemours, Inc.製造,“Nafion”為註冊商標);天然和合成沸石類;及活性白土(酸性白土)類等酸性觸媒,在50~250℃下,作為原料的二甲苯化合物實質上消失,並且使其反應直至反應組成成為恆定而獲得酚樹脂。反應時間能夠依據原料及反應溫度來適當設定,例如,能夠設為1~15小時左右,能夠藉由GPC(凝膠滲透層析法)等一邊跟蹤反應組成一邊進行確定。
含有反應性基之(甲基)丙烯酸共聚物例如可以係含有環氧基之(甲基)丙烯酸共聚物。含有環氧基之(甲基)丙烯酸共聚物可以係藉由環氧丙基(甲基)丙烯酸酯作為原料而獲得之共聚物,該環氧丙基(甲基)丙烯酸酯的量使用相對於所獲得之共聚物成為0.5~6質量%的量。若環氧丙基(甲基)丙烯酸酯的含量為0.5質量%以上,則變得容易獲得高接著力,另一方面,在6質量%以下時,具有能夠抑制膠化之傾向。構成含有反應性基之(甲基)丙烯酸共聚物的餘項之單體,例如,可以係甲基丙烯酸甲酯等具有碳數1~8的烷基之烷基(甲基)丙烯酸酯、苯乙烯、丙烯腈等。在該等中,構成含有反應性基之(甲基)丙烯酸共聚物的餘項之單體,可以係乙基(甲基)丙烯酸酯和/或(甲基)丙烯酸丁酯。混合比能夠考慮含有反應性基之(甲基)丙烯酸共聚物的Tg來進行調整。若Tg為-10℃以上,則具有能夠抑制B階段狀態下的接著劑層5的黏性變得過大的傾向,並且具有操作性優異的傾向。另外,含有環氧基之(甲基)丙烯酸共聚物的玻璃轉移溫(Tg)例如可以為30℃以下。聚合方法並沒有特別限制,例如,可以舉出珠狀聚合、溶液聚合等。作為市售的含有環氧基之(甲基)丙烯酸共聚物,例如,可以舉出HTR-860P-3(產品名稱,Nagase Chemtex Corporation製造)。
從接著性及耐熱性的觀點考慮,含有環氧基之(甲基)丙烯酸共聚物的重量平均分子量可以為10萬以上,亦可以為30萬~300萬或50萬~200萬。若重量平均分子量為300萬以下,則能夠抑制晶片與支撐晶片之基板之間的填充性的降低。重量平均分子量係藉由凝膠滲透層析法(GPC)並使用基於標準聚苯乙烯之校準曲線之聚苯乙烯換算值。
作為固化促進劑,例如,可以舉出第三級胺、咪唑類、四級銨鹽類等。作為固化促進劑的具體例,可以舉出2-甲基咪唑、2-乙基-4-甲基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-苯基咪唑鎓偏苯三酸酯。
填充劑可以為無機填充劑。作為無機填充劑的具體例,可以舉出氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁鬚晶、氮化硼、結晶二氧化矽、無定形二氧化矽。
接著劑層5的厚度例如可以為1~300μm、5~150μm或10~100μm。若接著劑層5的厚度為1μm以上,則具有接著性更優異,另一方面,若為300μm以下,則擴展時的分割性及拾取性更加優異的傾向。
另外,接著劑層5可以係不包含熱固化性樹脂(環氧樹脂及環氧樹脂固化劑)之態樣。例如,在接著劑層5包含含有反應性基之(甲基)丙烯酸共聚物之情況下,接著劑層5可以係包含含有反應性基之(甲基)丙烯酸共聚物、固化促進劑及填充劑者。
在切割膜7的黏著劑層3上形成接著劑層5之方法能夠採用公知的方法。作為接著劑層5的形成方法,例如,可以舉出製備接著劑組成物的清漆(接著劑層形成用清漆),並將其塗敷於黏著劑層3的表面之方法,形成包含被脫模處理之膜和設置於被脫模處理之膜上之接著劑層5之晶粒接合膜,並將晶粒接合膜中的接著劑層5貼附於黏著劑層3之方法等。接著劑組成物的清漆(接著劑層形成用清漆)可以係能夠溶解除了填充劑以外的各成分之有機溶劑並藉由加熱而揮發者。作為有機溶劑的具體例,能夠例示出與紫外線固化型黏著劑的清漆中的有機溶劑相同者。
膜10例如能夠藉由如下方法來製造,該方法包括:準備切割膜7之步驟,包含基材層1及設置於基材層1上之由紫外線固化型黏著劑組成之黏著劑層3;及在切割膜7的黏著劑層3上設置接著劑層5之步驟。
[半導體裝置及其製造方法]
圖3係半導體裝置的一實施形態的示意剖面圖。圖3所示之半導體裝置100具備:基板70,在基板70的表面上積層之4個晶片S1、S2、S3、S4,基板70的表面上的電極(未圖示),與4個晶片S1、S2、S3、S4電連接之導線W1、W2、W3、W4,以及將該等進行密封之密封層50。
基板70例如可以係有機基板,亦可以係引線框等金屬基板。從抑制半導體裝置100的翹曲之觀點考慮,基板70的厚度例如可以為70~140μm,亦可以為80~100μm。
4個晶片S1、S2、S3、S4可以經由接著劑片5P的固化物5C來積層。平面觀察時的晶片S1、S2、S3、S4的形狀例如係正方形或長方形。晶片S1、S2、S3、S4的面積可以為30~250mm
2,亦可以為40~200mm
2或50~150mm
2。晶片S1、S2、S3、S4的一邊的長度,例如為6.0mm以上,可以為7.0~18mm或8.0~15mm。晶片S1、S2、S3、S4的厚度例如為10~100μm,亦可以為20~80μm。另外,4個晶片S1、S2、S3、S4的一邊的長度可以相同,亦可以互不相同,關於厚度亦相同。又,4個晶片S1、S2、S3、S4可以係尺寸較小者。亦即,晶片S1、S2、S3、S4的面積例如可以小於30mm
2,亦可以為0.1~20mm
2或1~15mm
2。
半導體裝置100的製造方法具備以下步驟。
(A)準備切割晶粒接合一體型膜之步驟(準備步驟),該切割晶粒接合一體型膜具備:切割膜,其包含基材層及設置於基材層上之由紫外線固化型黏著劑組成之黏著劑層;及接著劑層,其設置於切割膜的黏著劑層上
(B)切割晶圓之步驟(切割步驟)
(C)對切割晶粒接合一體型膜的接著劑層貼附晶圓之步驟(晶圓貼附步驟)
(D)藉由在冷卻條件下擴展基材層而獲得晶圓及接著劑層單片化而成之附有接著劑片之晶片之步驟(冷卻擴展步驟)
(E)藉由對黏著劑層照射紫外線而降低黏著劑層的相對於附有接著劑片之晶片的黏著力之步驟(紫外線照射步驟)
(F)從黏著劑層上拾取附有接著劑片之晶片之步驟(拾取步驟)
(G)將所拾取之附有接著劑片之晶片安裝於基板或其他晶片上之步驟(安裝步驟)
在(A)步驟中準備之切割晶粒接合一體型膜中,在溫度23℃下以剝離角度30°及剝離速度600mm/分鐘的條件測量之、黏著劑層的相對於接著劑層的黏著力為15N/25mm以上。在(A)步驟中準備之切割晶粒接合一體型膜中,切割膜在-15℃下的儲存模數為100MPa以上。
一邊參閱圖4及圖5,一邊對附有接著劑片之晶片8的製作方法的一例進行說明。首先,準備上述膜10((A)步驟(準備步驟))。
接著,在晶圓W的電路面Wa上貼附保護膜(有時稱為“BG帶”。),在晶圓W上照射雷射,而形成複數條預定切割線L((B)步驟(切割步驟),參閱圖4(a))。將其稱為隱形切割。隱形切割能夠對厚度薄的晶圓W(例如,100μm以下)較佳地使用。其後,根據需要,可以對晶圓W進行用於調整晶圓W的厚度之背面磨光處理、以及用於拋光晶圓W之拋光處理。另外,在此對基於雷射的隱形切割進行說明,但亦可以代替隱形切割而藉由刀片來隱形切割晶圓W。有時將其稱為隱形切割的切割。隱形切割表示不切割晶圓W而形成與晶圓W的預定切割線L對應之切口。
接著,如圖4(a)所示,對膜10的接著劑層5貼附晶圓W的背面Wb((B)步驟(晶圓貼附步驟))。此時,亦可以對黏著劑層3貼附切割環DR。
接著,如圖4(b)所示,藉由-15~0℃的溫度條件下進行冷卻擴展,而將晶圓W及接著劑層5單片化((D)步驟(冷卻擴展步驟))。亦即,如圖4(b)所示,藉由環Ra上推基材層1中的切割環DR的內側區域1a,而對基材層1賦予張力。藉此,晶圓W沿著預定切割線L被分割,並且隨之接著劑層5被接著劑片5P分割,在黏著劑層3的表面上獲得複數個附有接著劑片之晶片8。附有接著劑片之晶片8由晶片S和接著劑片5P構成。
接著,藉由將基材層1中的切割環DR的內側區域1a進行加熱而使內側區域1a收縮(熱收縮)。圖5(a)係示意性地表示藉由加熱器H的鼓風而加熱內側區域1a的狀態之剖面圖。藉由將內側區域1a收縮成環狀而對基材層1賦予張力,能夠擴大相鄰之附有接著劑片之晶片8的間隔。藉此,能夠更進一步抑制拾取錯誤的發生,並且能夠提高拾取步驟中的附有接著劑片之晶片8的可見性。
接著,如圖5(b)所示,藉由照射紫外線而降低黏著劑層3的黏著力((E)步驟(紫外線照射步驟))。紫外線對黏著劑層3的照度例如可以為1~200mW/cm
2,10~150mW/cm
2或30~100mW/cm
2。紫外線對黏著劑層3的照射量例如為10~1000mJ/cm
2,亦可以為50~700mJ/cm
2或100~500mJ/cm
2。其後,如圖5(c)所示,藉由用上推夾具42上推附有接著劑片之晶片8而將附有接著劑片之晶片8從黏著劑層3上剝離,並且用吸夾頭44吸引來拾取附有接著劑片之晶片8((F)步驟(拾取步驟))。
附有接著劑片之晶片8被輸送至半導體裝置的組裝裝置(未圖示),壓接於電路基板等上((G)步驟(安裝步驟))。如圖6(a)所示,經由接著劑片5P將第一段的晶片S1(晶片S)壓接到基板70的規定的位置。接著,藉由加熱而使接著劑片5P固化(晶粒接合步驟)。藉此,接著劑片5P藉由固化而成為固化物5C。從減小空隙之觀點考慮,接著劑片5P的固化處理可以在加壓環境下實施。
與對基板70安裝晶片S1同樣地,在晶片S1的表面上安裝第二段的晶片S2。此外,藉由安裝第三段及第四段的晶片S3、S4而製作圖6(b)所示之結構體60。能夠藉由在用導線W1、W2、W3、W4分別將晶片S1、S2、S3、S4和基板70進行電連接之後,形成用於密封半導體器件及導線之密封層50,並且藉由密封半導體器件及導線而製作圖3所示之半導體裝置100。
[實施例]
以下,基於實施例對本發明及進行具體說明,但本發明並不限定於該等實施例。另外,若沒有特別記載,則藥品使用了均使用了試劑(市售品)。
<製造例1>
[(甲基)丙烯酸系樹脂(A-1)的合成]
在具備並安裝了三合一馬達、攪拌槳及氮氣導入管之容量為2000mL的燒瓶中,加入以下成分。
·乙酸乙酯(溶劑):635質量份
·丙烯酸2-乙基己酯:395質量份
·丙烯酸2-羥乙酯:100質量份
·甲基丙烯酸:5質量份
·偶氮雙異丁腈:0.08質量份
將內容物攪拌至充分均勻之後,以500mL/分鐘的流量實施60分鐘的鼓泡,對系統中的溶解氧進行了脫氣。經1小時升溫至78℃,升溫後聚合了6小時。接著,將反應溶液移送至具備並安裝了三合一馬達、攪拌槳及及氮氣導入管之容量2000mL的壓力釜中,在120℃、0.28Mpa的條件下加熱4.5小時之後,冷卻至室溫(25℃,以下相同)。
接著,加入490質量份的乙酸乙酯並進行攪拌,稀釋了內容物。向其中添加二月桂酸二辛基錫0.10質量份作為胺基甲酸酯化觸媒,然後加入2-甲基丙烯醯氧基乙基異氰酸酯(SHOWA DENKO K.K.製造,Karenz MOI(產品名稱))105.3質量份,在70℃下反應6小時之後,冷卻至室溫。接著,進一步加入乙酸乙酯,將(甲基)丙烯酸系樹脂溶液中的不揮發成分含量調整為35質量%,獲得了製造例1的包含具有可鏈聚合之官能基之(甲基)丙烯酸系樹脂(A-1)之溶液。
<製造例2>
[(甲基)丙烯酸系樹脂(A-2)的合成]
除了將在表1的製造例1所示的原料單體組成變更為表1的製造例2所示的原料單體組成以外,以與製造例1相同的方法獲得了包含製造例2的(甲基)丙烯酸系樹脂(A-2)之溶液。將製造例2的(甲基)丙烯酸系樹脂(A-2)的特性的測量結果示於表1中。
<製造例3>
[(甲基)丙烯酸系樹脂(A-3)的合成]
除了將表1的製造例1所示的原料單體組成變更為表1的製造例3所示的原料單體組成以外,以與製造例1相同的方法獲得了包含製造例3的(甲基)丙烯酸系樹脂(A-3)之溶液。將製造例3的(甲基)丙烯酸系樹脂(A-3)的特性的測量結果示於表1中。
[表1]
(甲基)丙烯酸系樹脂 | 製造例1 | 製造例2 | 製造例3 | |
(A-1) | (A-2) | (A-3) | ||
原料單體 (質量份) | 丙烯酸2-乙基己酯 | 79 | 79 | 79 |
丙烯酸2-羥乙酯 | 20 | 20 | 20 | |
甲基丙烯酸 | 1 | 1 | 1 | |
(合計) | (100) | (100) | (100) | |
2-甲基丙烯醯氧基乙基異氰酸酯 | 21 | 16 | 19 |
<實施例1>
[切割膜(黏著劑層)的製作]
藉由混合以下成分,製備了紫外線固化型黏著劑的清漆(黏著劑層形成用清漆)(參閱表2)。乙酸乙酯(溶劑)的量調整為清漆的總固體成分含量成為25質量%。
·製造例1的包含(甲基)丙烯酸系樹脂(A-1)之溶液:100質量份(固體成分)
·光聚合起始劑(B-1)1-羥基環己基苯基甲酮(IGM RESINS B.V.公司製造,Omnirad 184,“Omnirad”為註冊商標):1.0質量份
·光聚合起始劑(B-2)苯基雙(2,4,6-三甲基苯甲醯基)氧化膦(IGM RESINS B.V.公司製造,Omnirad 819,“Omnirad”為註冊商標):0.2質量份
·交聯劑(C-1)(多官能異氰酸酯(甲苯二異氰酸酯與三羥甲基丙烷的反應物),Nippon Polyurethane Industry Co.,Ltd.製造,Coronate L,固體成分:75%):2.0質量份(固體成分)
·乙酸乙酯(溶劑)
準備了在一個表面實施了脫模處理之聚對苯二甲酸乙二酯膜(寬度450mm,長度500mm,厚度38μm)。在實施了脫模處理之面上,使用塗敷器塗佈紫外線固化型黏著劑的清漆之後,在80℃下乾燥了3分鐘。由此獲得了由聚對苯二甲酸乙二酯膜和在其上形成之厚度8μm的黏著劑層組成之積層體(切割膜)。
準備了在一個表面實施了電暈處理之聚烯烴膜(寬度450mm,長度500mm,厚度90μm)。在室溫下貼合了實施了電暈處理之面和上述積層體的黏著劑層。接著,藉由用橡膠輥按壓,而將黏著劑層轉印到聚烯烴膜(覆蓋膜)。其後,藉由在室溫下放置3天,而獲得了附有覆蓋膜之切割膜。
[晶粒接合膜(接著劑層)的製作]
藉由混合以下成分,而製備了接著劑層形成用清漆。首先,在包含以下成分之混合物中加入環己酮(溶劑)並進行攪拌混合之後,進一步使用珠磨機混錬了90分鐘。
·環氧樹脂(YDCN-700-10(產品名稱),NIPPON STEEL Chemical & Material Co., Ltd.製造,甲酚酚醛清漆型環氧樹脂,環氧當量:210,分子量:1200,軟化點:80℃):11.0質量份
·環氧樹脂(EXA-830CRP(產品名稱),DIC CORPORATION製造,雙酚F型環氧樹脂,環氧當量:160,分子量:1800,軟化點:85℃):13.0質量份
·酚樹脂(Millex XLC-LL(產品名稱),Mitsui Chemicals, Inc.製造,酚樹脂,羥基當量:175,吸水率:1.8%,350℃下的加熱重量減少率:4%):18.7質量份
·矽烷偶合劑(NUC A-189(產品名稱)NUC公司製造,γ-巰基丙基三甲氧基矽烷):0.1質量份
·矽烷偶合劑(NUC A-1160(產品名稱),ENEOS NUC Corporation製造,γ-脲基丙基三乙氧基矽烷):0.2質量份
·填充劑(SC2050-HLG(產品名稱),ADMATECHS CO., LTD.製造,二氧化矽,平均粒徑0.500μm):39質量份
在如上述那樣獲得之混合物中,進一步加入以下成分之後,藉由攪拌混合及真空脫氣的步驟,獲得了接著劑層形成用清漆。
·含有環氧基之丙烯酸共聚物(HTR-860P-3(產品名稱),Nagase Chemtex Corporation製造,重量平均分子量:80萬):16質量份
·固化促進劑(Curesol 2PZ-CN(產品名稱),SHIKOKU CHEMICALS CORPORATION製造,1-氰基乙基-2-苯基咪唑,“Curesol”為註冊商標)0.1質量份
準備了聚對苯二甲酸乙二酯膜(厚度35μm),其一個表面被實施了脫模處理。在實施了脫模處理之面上,使用塗敷器塗佈接著劑層形成用清漆之後,在140℃下加熱乾燥了5分鐘。藉此,獲得了由聚對苯二甲酸乙二酯膜(載子膜)、以及形成於其上之厚度25μm的接著劑層(B階段狀態)組成之積層體(晶粒接合膜)。
[切割晶粒接合一體型膜的製作]
將由接著劑層和載子膜組成之晶粒接合膜切割成每個載體膜為直徑312mm的圓形。在所切割之晶粒接合膜上,在室溫下貼附剝離了聚對苯二甲酸乙二酯膜之切割膜,然後在室溫下放置1天。其後,將切割膜切割成直徑370mm的圓形。以這種方式獲得了用於供後述各種評價試驗之複數個實施例1的切割晶粒接合一體型膜。
<實施例2>
除了將黏著劑層的厚度從8μm變更為10μm以外,以與實施例1相同的方式獲得了複數個實施例2的切割晶粒接合一體型膜。
<實施例3>
除了將製作切割膜(黏著劑層)時的交聯劑(C-1)的含量從2.0質量份(固體成分)變更為4.0質量份(固體成分)以外,以與實施例2相同的方式獲得了複數個實施例3的切割晶粒接合一體型膜。
<比較例1>
除了將表2的實施例2的黏著劑層的組成變更為表2的比較例1的黏著劑層的組成以外,以與實施例2相同的方式獲得了複數個比較例1的切割晶粒接合一體型膜。
<比較例2>
除了將表2的實施例2的黏著劑層的組成變更為表2的比較例2的黏著劑層的組成以外,以與實施例2相同的方式獲得了複數個比較例1的切割晶粒接合一體型膜。
[評價試驗]
(1)黏著劑層的相對於接著劑的黏著力(30°剝離強度)的測量
將紫外線照射前的黏著劑層的相對於接著劑之黏著力及照射紫外線後的黏著劑層的黏著力,藉由測量30°剝離強度而進行了評價。關於紫外線照射前的黏著劑層的測量試樣,藉由將切割晶粒接合一體型膜切出寬度25mm及長度100mm而獲得。關於照射紫外線後的黏著劑層的測量試樣,藉由將切割晶粒接合一體型膜切出寬度25mm及長度100mm,並使用紫外線照射裝置(GS Yuasa Corporation,傳送帶紫外線照射裝置CS60)對其照射照度70mW/cm
2及照射量150mJ/cm
2的紫外線(主波長:365nm)而獲得。使用拉伸試驗機(Kyowa Interface Science Co., Ltd.製造,拉伸試驗機“VPA-2”),從各自的測量試樣中測量了黏著劑層的相對於接著劑層的剝離強度量。測量條件設為剝離角度30°及剝離速度600mm/分鐘。試樣的保存及剝離強度的測量,在溫度23℃、相對濕度40%的環境下進行。將結果示於表2中。另外,剝離強度的測量上限為“20N/25mm”,表2中的“>20”表示超過測量上限。
(2)切割膜在-15℃下的儲存模數的測量
對切割膜進行動態黏彈性測量,測量了-15℃下的儲存模數。將切割膜切出寬度4mm及長度40mm,獲得了試驗片。使用動態黏彈性測量裝置(Rheogel E-4000(Universal Building Materials Co.,Ltd.製造)),以頻率1Hz,升溫速度3℃/min,夾頭間距離20mm,自動靜負載條件下對所切出之試驗片測量了儲存模數。將結果示於表2中。另外,在表2中,“-”表示未測量。
(3)拾取性的評價
準備12英吋的晶圓及切割晶粒接合一體型膜,依序進行切割步驟、晶圓貼附步驟、冷卻擴展步驟、紫外線照射步驟及拾取步驟。在切割步驟中,藉由隱形切割成12mm×6mm的矩形狀而在晶圓上形成預定的分離線。其後,為了調整晶圓的厚度,進行背面磨光處理,將晶圓的厚度調整為35μm。在晶圓貼附步驟中,在70℃下對在上述製作之各自的切割晶粒接合一體型膜的接著劑層貼附了晶圓。在冷卻擴展步驟中,使用模具分離器(DISCO Corporation製造,型號DDS-2300),並在以下條件下進行了冷卻擴展及隨其後的熱收縮。接著,藉由該模具分離器內的清洗機構,在以下條件下進行了清洗及乾燥。
(冷卻擴展條件)
冷卻溫度:-15℃,冷卻時間:90秒,擴展量:10mm,擴展速度:200mm/s,擴展後的保留時間:3秒
(熱收縮條件)
加熱器溫度:220℃,加熱器旋轉速度:5°/秒,擴展量:8mm
(清洗條件)
清洗時間:120秒,轉速:600旋轉/分鐘
(乾燥條件)
乾燥時間:60秒,轉速:1500旋轉/分鐘
在紫外線照射步驟中,使用紫外線照射裝置(GS Yuasa Corporation,傳送帶紫外線照射裝置CS60),照射了照度70mW/cm
2及照射量150mJ/cm
2的紫外線(主波長:365nm)。在拾取步驟中,在以下條件下拾取了20個附有接著劑片之晶片。
(拾取條件)
·貼片機裝置:DB800-HSD(Hitachi High-Technologies Corporation製造)
·上推銷:EJECTOR NEEDLE SEN2-83-05(直徑:0.7mm,前端形狀:半徑350μm的半球,Micro Mechanics公司製造)
·上推高度:100μm
·上推速度:10mm/分鐘
另外,關於拾取性,將拾取的成功個數為20個(100%)之情況評價為“A”,將拾取的成功率為16~19個之情況評價為“B”,將拾取的成功率為15個以下之情況評價為“C”。將結果示於表2中。
(4)接著劑層的分割性及附有接著劑片之晶片的剝離性
(3)在評價拾取性之後,目視觀察了拾取之附有接著劑片之晶片。即使在使用了實施例1~3及比較例1、2的切割晶粒接合一體型膜之情況下,接著劑層的分割性亦良好。接著,目視觀察了所拾取之附有接著劑片之晶片的接著劑層表面及黏著劑層表面。在使用比較例1、2的切割晶粒接合一體型膜之情況下,在該接著劑層表面確認到被轉印有從擴展之步驟(從(D)步驟)至紫外線照射步驟((E)步驟)之間產生之附有接著劑片之晶片的端部與黏著劑層之間的剝離的痕跡。另一方面,在使用了實施例1~3的切割晶粒接合一體型膜之情況下,未觀測到附有接著劑片之晶片的端部與黏著劑層之間的剝離的痕跡,附有接著劑片之晶片的剝離性良好。
[表2]
實施例1 | 實施例2 | 實施例3 | 比較例1 | 比較例2 | ||||
黏著劑層 (紫外線固化型黏著劑)的組成(質量份) | (甲基)丙烯酸系樹脂 | (A-1) | 100 | 100 | 100 | - | - | |
(A-2) | - | - | - | 100 | - | |||
(A-3) | - | - | - | - | 100 | |||
光聚合起始劑 | (B-1) | 1.0 | 1.0 | 1.0 | 1.0 | 1.5 | ||
(B-2) | 0.2 | 0.2 | 0.2 | 0.2 | 0.3 | |||
交聯劑 | (C-1) | 2.0 | 2.0 | 4.0 | 8.0 | 8.0 | ||
黏著劑層的厚度(μm) | 8 | 10 | 10 | 10 | 10 | |||
黏著劑層的相對於接著劑層的黏著力(N/25mm) | 照射紫外線前 | >20 | >20 | 16 | 13 | 11 | ||
照射紫外線後 | 0.9 | 0.9 | 0.7 | 0.7 | 0.7 | |||
切割膜在-15℃下的儲存模數(Mpa) | 608 | 512 | - | 559 | 504 | |||
拾取性 | A | A | A | B | B | |||
如表2所示,實施例1~3的切割晶粒接合一體型膜的拾取性比比較例1、2的切割晶粒接合一體型膜良好。從以上結果可確認到本發明的切割晶粒接合一體型膜能夠抑制拾取性的降低。
1:基材層
3:黏著劑層
5:接著劑層
7:切割膜
8:附有接著劑片之晶片
10:切割晶粒接合一體型膜
W:晶圓
圖1(a)係表示切割晶粒接合一體型膜的一實施形態之俯視圖,圖1(b)係沿著圖1(a)所示的B-B線之示意剖面圖。
圖2係示意性地表示測量黏著劑層的相對於接著劑層的30°剝離強度之狀態的剖面圖。
圖3係半導體裝置的一實施形態的示意剖面圖。
圖4(a)及圖4(b)係示意性地表示製造附有接著劑片之晶片之過程的剖面圖。
圖5(a)、圖5(b)及圖5(c)係示意性地表示製造附有接著劑片之晶片之過程的剖面圖。
圖6(a)及圖6(b)係示意性地表示製造圖3所示的半導體裝置之過程的剖面圖。
1:基材層
3:黏著劑層
5:接著劑層
7:切割膜
10:切割晶粒接合一體型膜
W:晶圓
Claims (6)
- 一種半導體裝置的製造方法,其包括: (A)準備切割晶粒接合一體型膜之步驟,該切割晶粒接合一體型膜具備:切割膜,其包含基材層及設置於前述基材層上之由紫外線固化型黏著劑組成之黏著劑層;及接著劑層,其設置於前述切割膜的前述黏著劑層上; (B)切割晶圓之步驟; (C)對前述切割晶粒接合一體型膜的前述接著劑層貼附前述晶圓之步驟; (D)藉由在冷卻條件下擴展前述基材層而獲得前述晶圓及前述接著劑層單片化而成之附有接著劑片之晶片之步驟; (E)藉由對前述黏著劑層照射紫外線而降低前述黏著劑層的相對於前述附有接著劑片之晶片的黏著力之步驟; (F)從前述黏著劑層上拾取前述附有接著劑片之晶片之步驟;及 (G)將所拾取之前述附有接著劑片之晶片安裝於基板或其他晶片上之步驟, 在前述切割晶粒接合一體型膜中,在溫度23下以剝離角度30°及剝離速度600mm/分鐘的條件測量之、前述黏著劑層的相對於前述接著劑層之黏著力為15N/25mm以上。
- 如請求項1所述之半導體裝置的製造方法,其中 在前述切割晶粒接合一體型膜中,在對前述黏著劑層照射照度70mW/cm 2及照射量150mJ/cm 2的紫外線之後,在溫度23℃下以剝離角度30°及剝離速度600mm/分鐘的條件測量之、照射紫外線後的前述黏著劑層的相對於前述接著劑層的黏著力為1N/25mm以下。
- 如請求項1或請求項2所述之半導體裝置的製造方法,其中 在前述切割晶粒接合一體型膜中,前述切割膜在-15℃下的儲存模數為100MPa以上。
- 一種切割晶粒接合一體型膜,其具備:切割膜,其包含基材層及設置於前述基材層上之由紫外線固化型黏著劑組成之黏著劑層;及接著劑層,其設置於前述切割膜的前述黏著劑層上, 在溫度23℃下以剝離角度30°及剝離速度600mm/分鐘的條件測量之、前述黏著劑層的相對於前述接著劑層的黏著力為15N/25mm以上。
- 如請求項4所述之切割晶粒接合一體型膜,其中 在對前述黏著劑層照射照度70mW/cm 2及照射量150mJ/cm 2的紫外線之後,在溫度23℃下以剝離角度30°及剝離速度600mm/分鐘的條件測量之、照射紫外線後的前述黏著劑層的相對於前述接著劑層的黏著力為1N/25mm以下。
- 如請求項4或請求項5所述之切割晶粒接合一體型膜,其中 前述切割膜在-15℃下的儲存模數為100MPa以上。
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