CN117157733A - 半导体装置的制造方法及切割晶粒接合一体型膜 - Google Patents
半导体装置的制造方法及切割晶粒接合一体型膜 Download PDFInfo
- Publication number
- CN117157733A CN117157733A CN202280027031.9A CN202280027031A CN117157733A CN 117157733 A CN117157733 A CN 117157733A CN 202280027031 A CN202280027031 A CN 202280027031A CN 117157733 A CN117157733 A CN 117157733A
- Authority
- CN
- China
- Prior art keywords
- adhesive layer
- pressure
- sensitive adhesive
- meth
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 239000010410 layer Substances 0.000 claims abstract description 166
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims abstract description 148
- 239000000853 adhesive Substances 0.000 claims abstract description 96
- 230000001070 adhesive effect Effects 0.000 claims abstract description 96
- 239000012790 adhesive layer Substances 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims description 28
- 238000001816 cooling Methods 0.000 claims description 16
- 238000003860 storage Methods 0.000 claims description 15
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 108
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 94
- -1 acryl Chemical group 0.000 description 86
- 239000004925 Acrylic resin Substances 0.000 description 54
- 229920000178 Acrylic resin Polymers 0.000 description 54
- 235000012431 wafers Nutrition 0.000 description 36
- 125000000524 functional group Chemical group 0.000 description 26
- 239000003822 epoxy resin Substances 0.000 description 25
- 229920000647 polyepoxide Polymers 0.000 description 25
- 239000003431 cross linking reagent Substances 0.000 description 22
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 21
- 239000000203 mixture Substances 0.000 description 21
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 20
- 150000001875 compounds Chemical class 0.000 description 17
- 239000002966 varnish Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 16
- 238000005259 measurement Methods 0.000 description 14
- 239000000178 monomer Substances 0.000 description 14
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 13
- 229920006243 acrylic copolymer Polymers 0.000 description 13
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 13
- 125000003700 epoxy group Chemical group 0.000 description 11
- 239000003999 initiator Substances 0.000 description 11
- 238000006116 polymerization reaction Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 8
- 239000012948 isocyanate Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000008096 xylene Substances 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 7
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 125000003277 amino group Chemical group 0.000 description 6
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 150000002513 isocyanates Chemical class 0.000 description 6
- 229940078552 o-xylene Drugs 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 239000005011 phenolic resin Substances 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 6
- 239000005020 polyethylene terephthalate Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 4
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 239000003456 ion exchange resin Substances 0.000 description 4
- 229920003303 ion-exchange polymer Polymers 0.000 description 4
- 229920001568 phenolic resin Polymers 0.000 description 4
- 238000010526 radical polymerization reaction Methods 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- 244000028419 Styrax benzoin Species 0.000 description 3
- 235000000126 Styrax benzoin Nutrition 0.000 description 3
- 235000008411 Sumatra benzointree Nutrition 0.000 description 3
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229960002130 benzoin Drugs 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 235000019382 gum benzoic Nutrition 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229920005862 polyol Polymers 0.000 description 3
- 229920000098 polyolefin Polymers 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 150000005846 sugar alcohols Polymers 0.000 description 3
- 230000002194 synthesizing effect Effects 0.000 description 3
- FRASJONUBLZVQX-UHFFFAOYSA-N 1,4-naphthoquinone Chemical compound C1=CC=C2C(=O)C=CC(=O)C2=C1 FRASJONUBLZVQX-UHFFFAOYSA-N 0.000 description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 2
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- NXXYKOUNUYWIHA-UHFFFAOYSA-N 2,6-Dimethylphenol Chemical compound CC1=CC=CC(C)=C1O NXXYKOUNUYWIHA-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
- CRBJBYGJVIBWIY-UHFFFAOYSA-N 2-isopropylphenol Chemical compound CC(C)C1=CC=CC=C1O CRBJBYGJVIBWIY-UHFFFAOYSA-N 0.000 description 2
- NJWGQARXZDRHCD-UHFFFAOYSA-N 2-methylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3C(=O)C2=C1 NJWGQARXZDRHCD-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- NTZCFGZBDDCNHI-UHFFFAOYSA-N 2-phenylanthracene-9,10-dione Chemical compound C=1C=C2C(=O)C3=CC=CC=C3C(=O)C2=CC=1C1=CC=CC=C1 NTZCFGZBDDCNHI-UHFFFAOYSA-N 0.000 description 2
- TUAMRELNJMMDMT-UHFFFAOYSA-N 3,5-xylenol Chemical compound CC1=CC(C)=CC(O)=C1 TUAMRELNJMMDMT-UHFFFAOYSA-N 0.000 description 2
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 2
- VLJSLTNSFSOYQR-UHFFFAOYSA-N 3-propan-2-ylphenol Chemical compound CC(C)C1=CC=CC(O)=C1 VLJSLTNSFSOYQR-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- HXDOZKJGKXYMEW-UHFFFAOYSA-N 4-ethylphenol Chemical compound CCC1=CC=C(O)C=C1 HXDOZKJGKXYMEW-UHFFFAOYSA-N 0.000 description 2
- CYYZDBDROVLTJU-UHFFFAOYSA-N 4-n-Butylphenol Chemical compound CCCCC1=CC=C(O)C=C1 CYYZDBDROVLTJU-UHFFFAOYSA-N 0.000 description 2
- FYYIUODUDSPAJQ-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-4-ylmethyl 2-methylprop-2-enoate Chemical compound C1C(COC(=O)C(=C)C)CCC2OC21 FYYIUODUDSPAJQ-UHFFFAOYSA-N 0.000 description 2
- YYVYAPXYZVYDHN-UHFFFAOYSA-N 9,10-phenanthroquinone Chemical compound C1=CC=C2C(=O)C(=O)C3=CC=CC=C3C2=C1 YYVYAPXYZVYDHN-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- MJVAVZPDRWSRRC-UHFFFAOYSA-N Menadione Chemical compound C1=CC=C2C(=O)C(C)=CC(=O)C2=C1 MJVAVZPDRWSRRC-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 229920000557 Nafion® Polymers 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- GUCYFKSBFREPBC-UHFFFAOYSA-N [phenyl-(2,4,6-trimethylbenzoyl)phosphoryl]-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C(=O)C1=C(C)C=C(C)C=C1C GUCYFKSBFREPBC-UHFFFAOYSA-N 0.000 description 2
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 238000010560 atom transfer radical polymerization reaction Methods 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 description 2
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- RGIBXDHONMXTLI-UHFFFAOYSA-N chavicol Chemical compound OC1=CC=C(CC=C)C=C1 RGIBXDHONMXTLI-UHFFFAOYSA-N 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 238000003851 corona treatment Methods 0.000 description 2
- 239000013039 cover film Substances 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- GHLKSLMMWAKNBM-UHFFFAOYSA-N dodecane-1,12-diol Chemical compound OCCCCCCCCCCCCO GHLKSLMMWAKNBM-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 125000005647 linker group Chemical group 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 125000005641 methacryl group Chemical group 0.000 description 2
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- HFPZCAJZSCWRBC-UHFFFAOYSA-N p-cymene Chemical compound CC(C)C1=CC=C(C)C=C1 HFPZCAJZSCWRBC-UHFFFAOYSA-N 0.000 description 2
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000005056 polyisocyanate Substances 0.000 description 2
- 229920001228 polyisocyanate Polymers 0.000 description 2
- 150000003077 polyols Chemical class 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 239000007870 radical polymerization initiator Substances 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 238000012712 reversible addition−fragmentation chain-transfer polymerization Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000010557 suspension polymerization reaction Methods 0.000 description 2
- 239000002562 thickening agent Substances 0.000 description 2
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- XSMIOONHPKRREI-UHFFFAOYSA-N undecane-1,11-diol Chemical compound OCCCCCCCCCCCO XSMIOONHPKRREI-UHFFFAOYSA-N 0.000 description 2
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 1
- HOEPBGSXAFUSIH-UHFFFAOYSA-N (2-isocyanato-1-prop-2-enoyloxypropyl) prop-2-enoate Chemical compound O=C=NC(C)C(OC(=O)C=C)OC(=O)C=C HOEPBGSXAFUSIH-UHFFFAOYSA-N 0.000 description 1
- XHXSXTIIDBZEKB-UHFFFAOYSA-N 1,2,3,4,5,6,7,8-octamethylanthracene-9,10-dione Chemical compound CC1=C(C)C(C)=C2C(=O)C3=C(C)C(C)=C(C)C(C)=C3C(=O)C2=C1C XHXSXTIIDBZEKB-UHFFFAOYSA-N 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- VPBZZPOGZPKYKX-UHFFFAOYSA-N 1,2-diethoxypropane Chemical compound CCOCC(C)OCC VPBZZPOGZPKYKX-UHFFFAOYSA-N 0.000 description 1
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- ZZHIDJWUJRKHGX-UHFFFAOYSA-N 1,4-bis(chloromethyl)benzene Chemical group ClCC1=CC=C(CCl)C=C1 ZZHIDJWUJRKHGX-UHFFFAOYSA-N 0.000 description 1
- ALVZNPYWJMLXKV-UHFFFAOYSA-N 1,9-Nonanediol Chemical compound OCCCCCCCCCO ALVZNPYWJMLXKV-UHFFFAOYSA-N 0.000 description 1
- LMGYOBQJBQAZKC-UHFFFAOYSA-N 1-(2-ethylphenyl)-2-hydroxy-2-phenylethanone Chemical compound CCC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 LMGYOBQJBQAZKC-UHFFFAOYSA-N 0.000 description 1
- BOCJQSFSGAZAPQ-UHFFFAOYSA-N 1-chloroanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2Cl BOCJQSFSGAZAPQ-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- LFSYUSUFCBOHGU-UHFFFAOYSA-N 1-isocyanato-2-[(4-isocyanatophenyl)methyl]benzene Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=CC=C1N=C=O LFSYUSUFCBOHGU-UHFFFAOYSA-N 0.000 description 1
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- KIJPZYXCIHZVGP-UHFFFAOYSA-N 2,3-dimethylanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=C(C)C(C)=C2 KIJPZYXCIHZVGP-UHFFFAOYSA-N 0.000 description 1
- LZWVPGJPVCYAOC-UHFFFAOYSA-N 2,3-diphenylanthracene-9,10-dione Chemical compound C=1C=CC=CC=1C=1C=C2C(=O)C3=CC=CC=C3C(=O)C2=CC=1C1=CC=CC=C1 LZWVPGJPVCYAOC-UHFFFAOYSA-N 0.000 description 1
- BPRYUXCVCCNUFE-UHFFFAOYSA-N 2,4,6-trimethylphenol Chemical compound CC1=CC(C)=C(O)C(C)=C1 BPRYUXCVCCNUFE-UHFFFAOYSA-N 0.000 description 1
- KUFFULVDNCHOFZ-UHFFFAOYSA-N 2,4-xylenol Chemical compound CC1=CC=C(O)C(C)=C1 KUFFULVDNCHOFZ-UHFFFAOYSA-N 0.000 description 1
- VJZBTBIZXCDAMV-UHFFFAOYSA-N 2-(1,3-dioxo-5,6,7,7a-tetrahydro-4h-isoindol-3a-yl)ethyl prop-2-enoate Chemical compound C1CCCC2C(=O)NC(=O)C21CCOC(=O)C=C VJZBTBIZXCDAMV-UHFFFAOYSA-N 0.000 description 1
- UCSGWEMRGIONEW-UHFFFAOYSA-N 2-(2-chlorophenyl)-4,5-bis(2-methoxyphenyl)-1h-imidazole Chemical class COC1=CC=CC=C1C1=C(C=2C(=CC=CC=2)OC)NC(C=2C(=CC=CC=2)Cl)=N1 UCSGWEMRGIONEW-UHFFFAOYSA-N 0.000 description 1
- NSWNXQGJAPQOID-UHFFFAOYSA-N 2-(2-chlorophenyl)-4,5-diphenyl-1h-imidazole Chemical class ClC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 NSWNXQGJAPQOID-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- UIHRWPYOTGCOJP-UHFFFAOYSA-N 2-(2-fluorophenyl)-4,5-diphenyl-1h-imidazole Chemical class FC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 UIHRWPYOTGCOJP-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- BJINVQNEBGOMCR-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethyl acetate Chemical compound COCCOCCOC(C)=O BJINVQNEBGOMCR-UHFFFAOYSA-N 0.000 description 1
- XIOGJAPOAUEYJO-UHFFFAOYSA-N 2-(2-methoxyphenyl)-4,5-diphenyl-1h-imidazole Chemical class COC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 XIOGJAPOAUEYJO-UHFFFAOYSA-N 0.000 description 1
- NFIDBGJMFKNGGQ-UHFFFAOYSA-N 2-(2-methylpropyl)phenol Chemical compound CC(C)CC1=CC=CC=C1O NFIDBGJMFKNGGQ-UHFFFAOYSA-N 0.000 description 1
- SNFCQJAJPFWBDJ-UHFFFAOYSA-N 2-(4-methoxyphenyl)-4,5-diphenyl-1h-imidazole Chemical class C1=CC(OC)=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 SNFCQJAJPFWBDJ-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- IXQGCWUGDFDQMF-UHFFFAOYSA-N 2-Ethylphenol Chemical compound CCC1=CC=CC=C1O IXQGCWUGDFDQMF-UHFFFAOYSA-N 0.000 description 1
- GJKGAPPUXSSCFI-UHFFFAOYSA-N 2-Hydroxy-4'-(2-hydroxyethoxy)-2-methylpropiophenone Chemical compound CC(C)(O)C(=O)C1=CC=C(OCCO)C=C1 GJKGAPPUXSSCFI-UHFFFAOYSA-N 0.000 description 1
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 1
- QIRNGVVZBINFMX-UHFFFAOYSA-N 2-allylphenol Chemical compound OC1=CC=CC=C1CC=C QIRNGVVZBINFMX-UHFFFAOYSA-N 0.000 description 1
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 1
- CDMGNVWZXRKJNS-UHFFFAOYSA-N 2-benzylphenol Chemical compound OC1=CC=CC=C1CC1=CC=CC=C1 CDMGNVWZXRKJNS-UHFFFAOYSA-N 0.000 description 1
- VADKRMSMGWJZCF-UHFFFAOYSA-N 2-bromophenol Chemical compound OC1=CC=CC=C1Br VADKRMSMGWJZCF-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- ISPYQTSUDJAMAB-UHFFFAOYSA-N 2-chlorophenol Chemical compound OC1=CC=CC=C1Cl ISPYQTSUDJAMAB-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- SJEBAWHUJDUKQK-UHFFFAOYSA-N 2-ethylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC=C3C(=O)C2=C1 SJEBAWHUJDUKQK-UHFFFAOYSA-N 0.000 description 1
- HFHFGHLXUCOHLN-UHFFFAOYSA-N 2-fluorophenol Chemical compound OC1=CC=CC=C1F HFHFGHLXUCOHLN-UHFFFAOYSA-N 0.000 description 1
- VZMLJEYQUZKERO-UHFFFAOYSA-N 2-hydroxy-1-(2-methylphenyl)-2-phenylethanone Chemical compound CC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 VZMLJEYQUZKERO-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- KQDJTBPASNJQFQ-UHFFFAOYSA-N 2-iodophenol Chemical compound OC1=CC=CC=C1I KQDJTBPASNJQFQ-UHFFFAOYSA-N 0.000 description 1
- DPNXHTDWGGVXID-UHFFFAOYSA-N 2-isocyanatoethyl prop-2-enoate Chemical compound C=CC(=O)OCCN=C=O DPNXHTDWGGVXID-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 description 1
- AXYQEGMSGMXGGK-UHFFFAOYSA-N 2-phenoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(=O)C(C=1C=CC=CC=1)OC1=CC=CC=C1 AXYQEGMSGMXGGK-UHFFFAOYSA-N 0.000 description 1
- LCHYEKKJCUJAKN-UHFFFAOYSA-N 2-propylphenol Chemical compound CCCC1=CC=CC=C1O LCHYEKKJCUJAKN-UHFFFAOYSA-N 0.000 description 1
- YTPSFXZMJKMUJE-UHFFFAOYSA-N 2-tert-butylanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=CC(C(C)(C)C)=CC=C3C(=O)C2=C1 YTPSFXZMJKMUJE-UHFFFAOYSA-N 0.000 description 1
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 1
- ZKSISJGIJFEBMS-UHFFFAOYSA-N 3-(2-methylpropyl)phenol Chemical compound CC(C)CC1=CC=CC(O)=C1 ZKSISJGIJFEBMS-UHFFFAOYSA-N 0.000 description 1
- MQSXUKPGWMJYBT-UHFFFAOYSA-N 3-butylphenol Chemical compound CCCCC1=CC=CC(O)=C1 MQSXUKPGWMJYBT-UHFFFAOYSA-N 0.000 description 1
- SJTBRFHBXDZMPS-UHFFFAOYSA-N 3-fluorophenol Chemical compound OC1=CC=CC(F)=C1 SJTBRFHBXDZMPS-UHFFFAOYSA-N 0.000 description 1
- MPWGZBWDLMDIHO-UHFFFAOYSA-N 3-propylphenol Chemical compound CCCC1=CC=CC(O)=C1 MPWGZBWDLMDIHO-UHFFFAOYSA-N 0.000 description 1
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- GDEHXPCZWFXRKC-UHFFFAOYSA-N 4-(2-methylpropyl)phenol Chemical compound CC(C)CC1=CC=C(O)C=C1 GDEHXPCZWFXRKC-UHFFFAOYSA-N 0.000 description 1
- KLSLBUSXWBJMEC-UHFFFAOYSA-N 4-Propylphenol Chemical compound CCCC1=CC=C(O)C=C1 KLSLBUSXWBJMEC-UHFFFAOYSA-N 0.000 description 1
- HJSPWKGEPDZNLK-UHFFFAOYSA-N 4-benzylphenol Chemical compound C1=CC(O)=CC=C1CC1=CC=CC=C1 HJSPWKGEPDZNLK-UHFFFAOYSA-N 0.000 description 1
- GZFGOTFRPZRKDS-UHFFFAOYSA-N 4-bromophenol Chemical compound OC1=CC=C(Br)C=C1 GZFGOTFRPZRKDS-UHFFFAOYSA-N 0.000 description 1
- WXNZTHHGJRFXKQ-UHFFFAOYSA-N 4-chlorophenol Chemical compound OC1=CC=C(Cl)C=C1 WXNZTHHGJRFXKQ-UHFFFAOYSA-N 0.000 description 1
- OAHMVZYHIJQTQC-UHFFFAOYSA-N 4-cyclohexylphenol Chemical compound C1=CC(O)=CC=C1C1CCCCC1 OAHMVZYHIJQTQC-UHFFFAOYSA-N 0.000 description 1
- RHMPLDJJXGPMEX-UHFFFAOYSA-N 4-fluorophenol Chemical compound OC1=CC=C(F)C=C1 RHMPLDJJXGPMEX-UHFFFAOYSA-N 0.000 description 1
- VSMDINRNYYEDRN-UHFFFAOYSA-N 4-iodophenol Chemical compound OC1=CC=C(I)C=C1 VSMDINRNYYEDRN-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 241001050985 Disco Species 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- 239000005058 Isophorone diisocyanate Substances 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- NPKSPKHJBVJUKB-UHFFFAOYSA-N N-phenylglycine Chemical compound OC(=O)CNC1=CC=CC=C1 NPKSPKHJBVJUKB-UHFFFAOYSA-N 0.000 description 1
- GWGWXYUPRTXVSY-UHFFFAOYSA-N N=C=O.N=C=O.CC1=CC=C(C)C=C1 Chemical compound N=C=O.N=C=O.CC1=CC=C(C)C=C1 GWGWXYUPRTXVSY-UHFFFAOYSA-N 0.000 description 1
- UQBRAHLFLCMLBA-UHFFFAOYSA-N N=C=O.N=C=O.CC1=CC=CC(C)=C1 Chemical compound N=C=O.N=C=O.CC1=CC=CC(C)=C1 UQBRAHLFLCMLBA-UHFFFAOYSA-N 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229920011250 Polypropylene Block Copolymer Polymers 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ARNIZPSLPHFDED-UHFFFAOYSA-N [4-(dimethylamino)phenyl]-(4-methoxyphenyl)methanone Chemical compound C1=CC(OC)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 ARNIZPSLPHFDED-UHFFFAOYSA-N 0.000 description 1
- LOCXTTRLSIDGPS-UHFFFAOYSA-N [[1-oxo-1-(4-phenylsulfanylphenyl)octan-2-ylidene]amino] benzoate Chemical compound C=1C=C(SC=2C=CC=CC=2)C=CC=1C(=O)C(CCCCCC)=NOC(=O)C1=CC=CC=C1 LOCXTTRLSIDGPS-UHFFFAOYSA-N 0.000 description 1
- XQBCVRSTVUHIGH-UHFFFAOYSA-L [dodecanoyloxy(dioctyl)stannyl] dodecanoate Chemical compound CCCCCCCCCCCC(=O)O[Sn](CCCCCCCC)(CCCCCCCC)OC(=O)CCCCCCCCCCC XQBCVRSTVUHIGH-UHFFFAOYSA-L 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- AFTRVMGRCSLGAF-UHFFFAOYSA-N acetamide;n,n-dimethylformamide Chemical compound CC(N)=O.CN(C)C=O AFTRVMGRCSLGAF-UHFFFAOYSA-N 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- 125000000641 acridinyl group Chemical class C1(=CC=CC2=NC3=CC=CC=C3C=C12)* 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- HXBPYFMVGFDZFT-UHFFFAOYSA-N allyl isocyanate Chemical compound C=CCN=C=O HXBPYFMVGFDZFT-UHFFFAOYSA-N 0.000 description 1
- 229920005603 alternating copolymer Polymers 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 238000010539 anionic addition polymerization reaction Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 125000002511 behenyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- UBXYXCRCOKCZIT-UHFFFAOYSA-N biphenyl-3-ol Chemical compound OC1=CC=CC(C=2C=CC=CC=2)=C1 UBXYXCRCOKCZIT-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000012662 bulk polymerization Methods 0.000 description 1
- 125000006226 butoxyethyl group Chemical group 0.000 description 1
- 229940043232 butyl acetate Drugs 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- PMMYEEVYMWASQN-IMJSIDKUSA-N cis-4-Hydroxy-L-proline Chemical compound O[C@@H]1CN[C@H](C(O)=O)C1 PMMYEEVYMWASQN-IMJSIDKUSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000012718 coordination polymerization Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- IFDVQVHZEKPUSC-UHFFFAOYSA-N cyclohex-3-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCC=CC1C(O)=O IFDVQVHZEKPUSC-UHFFFAOYSA-N 0.000 description 1
- QSAWQNUELGIYBC-UHFFFAOYSA-N cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCCC1C(O)=O QSAWQNUELGIYBC-UHFFFAOYSA-N 0.000 description 1
- RLMGYIOTPQVQJR-UHFFFAOYSA-N cyclohexane-1,3-diol Chemical compound OC1CCCC(O)C1 RLMGYIOTPQVQJR-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- FOTKYAAJKYLFFN-UHFFFAOYSA-N decane-1,10-diol Chemical compound OCCCCCCCCCCO FOTKYAAJKYLFFN-UHFFFAOYSA-N 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- KORSJDCBLAPZEQ-UHFFFAOYSA-N dicyclohexylmethane-4,4'-diisocyanate Chemical compound C1CC(N=C=O)CCC1CC1CCC(N=C=O)CC1 KORSJDCBLAPZEQ-UHFFFAOYSA-N 0.000 description 1
- DENRZWYUOJLTMF-UHFFFAOYSA-N diethyl sulfate Chemical compound CCOS(=O)(=O)OCC DENRZWYUOJLTMF-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- VAYGXNSJCAHWJZ-UHFFFAOYSA-N dimethyl sulfate Chemical compound COS(=O)(=O)OC VAYGXNSJCAHWJZ-UHFFFAOYSA-N 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical class O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000007720 emulsion polymerization reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 229940093499 ethyl acetate Drugs 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000012685 gas phase polymerization Methods 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000010551 living anionic polymerization reaction Methods 0.000 description 1
- 238000010552 living cationic polymerization reaction Methods 0.000 description 1
- 229920001684 low density polyethylene Polymers 0.000 description 1
- 239000004702 low-density polyethylene Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000391 magnesium silicate Substances 0.000 description 1
- 229910052919 magnesium silicate Inorganic materials 0.000 description 1
- 235000019792 magnesium silicate Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229920001179 medium density polyethylene Polymers 0.000 description 1
- 239000004701 medium-density polyethylene Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 229940086559 methyl benzoin Drugs 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- BIHVYFFSKHTVIG-UHFFFAOYSA-N naphtho[1,2-g]isoquinoline Chemical compound N1=CC=C2C=C3C4=CC=CC=C4C=CC3=CC2=C1 BIHVYFFSKHTVIG-UHFFFAOYSA-N 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- OEIJHBUUFURJLI-UHFFFAOYSA-N octane-1,8-diol Chemical compound OCCCCCCCCO OEIJHBUUFURJLI-UHFFFAOYSA-N 0.000 description 1
- 235000010292 orthophenyl phenol Nutrition 0.000 description 1
- 125000003566 oxetanyl group Chemical group 0.000 description 1
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical class [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 239000000825 pharmaceutical preparation Substances 0.000 description 1
- 229940127557 pharmaceutical product Drugs 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920001610 polycaprolactone Polymers 0.000 description 1
- 239000004632 polycaprolactone Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 229920005630 polypropylene random copolymer Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000012673 precipitation polymerization Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 239000003930 superacid Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 229920001862 ultra low molecular weight polyethylene Polymers 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/385—Acrylic polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
- Adhesive Tapes (AREA)
Abstract
本发明公开一种切割晶粒接合一体型膜。该切割晶粒接合一体型膜具备:切割膜,其包含基材层及设置于基材层上的由紫外线固化型压敏胶黏剂组成的压敏胶黏剂层;及黏合剂层,其设置于切割膜的压敏胶黏剂层上。在温度23℃下以剥离角度30°及剥离速度600mm/分钟的条件测定的、压敏胶黏剂层的相对于黏合剂层的胶接力为15N/25mm以上。
Description
技术领域
本发明涉及一种半导体装置的制造方法及切割晶粒接合一体型膜。
背景技术
半导体装置经过以下工序来制造。首先,在晶圆上贴附切割用压敏胶黏剂膜的状态实施切割工序。然后,实施扩展工序、拾取工序、晶粒接合工序等。
在半导体装置的制造工艺中,使用称作切割晶粒接合一体型膜的膜。该膜具有依次层叠了基材层、压敏胶黏剂层及黏合剂层的结构,例如,以如下方式使用。首先,将黏合剂层侧的面贴附在晶圆上,并且在用切割环固定晶圆的状态下切割晶圆。由此,晶圆被单片化为多个芯片。接着,通过对压敏胶黏剂层照射紫外线而降低压敏胶黏剂层的相对于黏合剂层的胶接力后,将芯片与黏合剂层单片化而成的黏合剂片一并从压敏胶黏剂层上拾取。其后,经过将芯片经由黏合剂片而安装于基板等的工序来制造半导体装置。另外,将由经过切割工序而获得的芯片和附着于其上的黏合剂片组成的层叠体称为附有黏合剂片的芯片。
以往,作为晶圆及黏合剂层的切割方法,利用刀片等进行切割的刀片切割广为人知。近年来,随着半导体封装件的高集成化及晶圆的薄化,隐形切割正在普及(参考专利文献1、2)。隐形切割是通过激光而在加工对象物的内部形成预定切割线之后,沿着预定切割线来切割晶圆及黏合剂层,从而获得附有黏合剂片的芯片的方法。
以往技术文献
专利文献
专利文献1:日本特开2002-192370号公报
专利文献2:日本特开2003-338467号公报
发明内容
发明要解决的技术课题
但是,在使用被薄化的芯片的附有黏合剂片的芯片的制造中,存在成品率降低的问题。据本发明人等的研究,发现在从压敏胶黏剂层上拾取附有黏合剂片的芯片前,有时会在附有黏合剂片的芯片的端部和压敏胶黏剂层之间发生剥离。若发生这种剥离,则具有压敏胶黏剂层的剥离部分与氧接触,在照射紫外线时胶接力不会充分降低,拾取性降低的倾向。
并且,在芯片上形成对准标志,从压敏胶黏剂层拾取附有黏合剂片的芯片的装置,通过识别该对准标志,来确定所拾取的附有黏合剂片的芯片的位置。因此,若发生这种剥离,可能会导致压敏胶黏剂层的剥离的部分变色,而无法确定所拾取的附有黏合剂片的芯片的位置,拾取性降低。
因此,本发明提供一种能够抑制拾取性降低的切割晶粒接合一体型膜。并且,本发明提供一种使用了这种切割晶粒接合一体型膜的半导体装置的制造方法。
用于解决技术课题的手段
本发明的一方面涉及一种半导体装置的制造方法。该半导体装置的制造方法包括以下工序。
(A)准备切割晶粒接合一体型膜的工序(准备工序),该切割晶粒接合一体型膜具备:切割膜,其包含基材层及设置于基材层上的由紫外线固化型压敏胶黏剂组成的压敏胶黏剂层;及黏合剂层,其设置于切割膜的压敏胶黏剂层上
(B)切割晶圆的工序(切割工序)
(C)对切割晶粒接合一体型膜的黏合剂层贴附晶圆的工序(晶圆贴附工序)
(D)通过在冷却条件下扩展基材层而获得晶圆及黏合剂层单片化而成的附有黏合剂片的芯片的工序(冷却扩展工序)
(E)通过对压敏胶黏剂层照射紫外线而降低压敏胶黏剂层的相对于附有黏合剂片的芯片的胶接力的工序(紫外线照射工序)
(F)从压敏胶黏剂层上拾取附有黏合剂片的芯片的工序(拾取工序)
(G)将所拾取的附有黏合剂片的芯片安装于基板或其他芯片上的工序(安装工序)
在(A)工序中准备的切割晶粒接合一体型膜中,在温度23℃下以剥离角度30°及剥离速度600mm/分钟的条件测定的、压敏胶黏剂层的相对于黏合剂层的胶接力为15N/25mm以上。
根据这种半导体装置的制造方法,能够通过使用具有规定的胶接力的切割晶粒接合一体型膜而在从压敏胶黏剂层上拾取附有黏合剂片的芯片前(在(F)工序前),抑制在附有黏合剂片的芯片的端部与压敏胶黏剂层之间发生剥离,并且能够抑制拾取性的降低。由此,能够以充分高的成品率制造半导体装置。
在(A)工序中准备的切割晶粒接合一体型膜中,在对压敏胶黏剂层照射照度70mW/cm2及照射量150mJ/cm2的紫外线后,在温度23℃下以剥离角度30°及剥离速度600mm/分钟的条件测定的、照射紫外线后的压敏胶黏剂层的相对于黏合剂层的胶接力可以为1N/25mm以下。
在(A)工序中准备的切割晶粒接合一体型膜中,切割膜在-15℃下的储能模量可以为100MPa以上。通过使用具有规定的储能模量的切割膜,在冷却扩展工序((D)工序)中,通过扩展时的冲击及压力,而具有附有黏合剂片的芯片的外周部的黏合剂断裂并且变得容易分割成各个附有黏合剂片的芯片的倾向。
本发明的另一方面涉及一种切割晶粒接合一体型膜。该切割晶粒接合一体型膜具备:切割膜,其包含基材层及设置于基材层上的由紫外线固化型压敏胶黏剂组成的压敏胶黏剂层;及黏合剂层,其设置于切割膜的压敏胶黏剂层上。在温度23℃下以剥离角度30°及剥离速度600mm/分钟的条件下测定的、压敏胶黏剂层的相对于黏合剂层的胶接力为15N/25mm以上。在对压敏胶黏剂层照射照度70mW/cm2及照射量150mJ/cm2的紫外线后,在温度23℃下以剥离角度30°及剥离速度600mm/分钟的条件测定的、照射紫外线后的压敏胶黏剂层的相对于黏合剂层的胶接力可以为1N/25mm以下。切割膜在-15℃下的储能模量可以为100MPa以上。
发明效果
根据本发明,提供一种能够抑制拾取性的低下的切割晶粒接合一体型膜。并且,根据本发明,提供一种使用了这种切割晶粒接合一体型膜的半导体装置的制造方法。
附图说明
图1(a)是表示切割晶粒接合一体型膜的一实施方式的俯视图,图1(b)是沿着图1(a)所示的B-B线的示意剖视图。
图2是示意性地表示测定压敏胶黏剂层的相对于黏合剂层的30°剥离强度的状态的剖视图。
图3是半导体装置的一实施方式的示意剖视图。
图4(a)及图4(b)是示意性地表示制造附有黏合剂片的芯片的过程的剖视图。
图5(a)、图5(b)及图5(c)是示意性地表示制造附有黏合剂片的芯片的过程的剖视图。
图6(a)及图6(b)是示意性地表示制造图3所示的半导体装置的过程的剖视图。
具体实施方式
以下,参考图示并对本发明的实施方式进行详细说明。其中,本发明并不限定于以下实施方式。
在本说明书中,使用“~”表示的数值范围表示将记载于“~”前后的数值分别作为最小值及最大值而包含的范围。在本说明书中阶段性记载的数值范围中,某阶段的数值范围的上限值或下限值,能够替换为其他阶段的数值范围的上限值或下限值。并且,在本说明书中所记载的数值范围中,其数值范围的上限值或下限值可以替换为实施例中所示出的值。并且,分别记载的上限值及下限值能够任意组合。并且,在本说明书中,“(甲基)丙烯酸酯”是指丙烯酸酯及与其对应的甲基丙烯酸酯中的至少一种。在“(甲基)丙烯酰”,“(甲基)丙烯酸”等其他类似表述中也相同。并且,“(聚)”表示存在和不存在“聚”的前缀这两种情况。并且,“A或B”只要包含A及B中的任一个即可,也可以包含两个。并且,以下例示的材料只要没有特别指定,则可以单独使用1种,也可以组合2种以上来使用。在组合物中相当于各成分的物质存在多个的情况下,只要没有特别指定,组合物中的各成分的含量则表示存在于组合物中的该多个物质的合计量。
[切割晶粒接合一体型膜]
图1(a)是表示切割晶粒接合一体型膜的一实施方式的俯视图,图1(b)是沿着图1(a)所示的B-B线的示意剖视图。切割晶粒接合一体型膜10(以下,根据情况简称为“膜10”。)能够适当地使用于包含(A)工序~(G)工序的半导体装置的制造工艺。
膜10具备:切割膜7,其包含基材层1及设置于基材层1上的由紫外线固化型压敏胶黏剂组成的压敏胶黏剂层3;及黏合剂层5,设置于切割膜7的压敏胶黏剂层3上。膜10依次具备基材层1、由紫外线固化型压敏胶黏剂组成的压敏胶黏剂层3及黏合剂层5。在本实施方式中,例示出在正方形的基材层1上形成了1个压敏胶黏剂层3及黏合剂层5的层叠体的方式,但可以是基材层1具有规定的长度(例如,100m以上),并且压敏胶黏剂层3及黏合剂层5的层叠体以沿着其长度方向排列的方式以规定的间隔配置的方式。
<切割膜>
切割膜7包含基材层1及设置于基材层1上的由紫外线固化型压敏胶黏剂组成的压敏胶黏剂层3。
(压敏胶黏剂层)
压敏胶黏剂层3的相对于黏合剂层5的(照射紫外线前的)的胶接力为15N/25mm以上。该胶接力是在温度23℃下以剥离角度30°及剥离速度600mm/分钟的条件下测定的30°剥离强度。图2是示意性地表示测定压敏胶黏剂层的相对于黏合剂层的30°剥离强度的状态的剖视图。如图2所示,在支撑板80上固定测定试样(宽度25mm×长度100mm)的黏合剂层5的状态下测定压敏胶黏剂层3的30°剥离强度。若压敏胶黏剂层3的相对于黏合剂层5的胶接力(30°剥离强度)在这种范围内,则能够在从压敏胶黏剂层上拾取附有黏合剂片的芯片前(在(F)工序前),抑制在附有黏合剂片的芯片的端部与压敏胶黏剂层之间发生剥离,并且能够抑制拾取性的降低。由此,能够以充分高的成品率制造半导体装置。压敏胶黏剂层3的相对于黏合剂层5的胶接力可以为16N/25mm以上、18N/25mm以上、或20N/25mm以上。压敏胶黏剂层3的相对于黏合剂层5的胶接力例如可以为30N/25mm以下。
对压敏胶黏剂层3照射照度70mW/cm2及照射量150mJ/cm2的紫外线(主波长:365nm)后的照射紫外线后的压敏胶黏剂层3的相对于黏合剂层5的胶接力可以为1N/25mm以下,也可以为0.9N/25mm以下。若照射紫外线后的压敏胶黏剂层3的相对于黏合剂层5的胶接力在这种范围内,则能够实现优异的拾取性。照射紫外线后的压敏胶黏剂层3的相对于黏合剂层5的胶接力可以为0.2N/25mm以上、0.4N/25mm以上、或0.6N/25mm以上。另外,该胶接力与上述相同,是在温度23℃下,在剥离角度30°及剥离速度600mm/分钟的条件下测定的30°剥离强度(参考图2)。
在本实施方式中,例如,能够通过调整后述(甲基)丙烯酸类树脂A中的可链聚合的官能团的含量(导入官能团的化合物的含量),用于交联(甲基)丙烯酸类树脂A的交联剂的含量等,或者,例如通过添加其他树脂(丙烯酸单体或低聚物、氨基甲酸酯单体或低聚物等)、粘着性赋予剂(增稠剂等)等来调整压敏胶黏剂层3的相对于黏合剂层5的胶接力及照射紫外线后的压敏胶黏剂层3的相对于黏合剂层5的胶接力。
压敏胶黏剂层3例如由包含具有可链聚合的官能团的(甲基)丙烯酸类树脂(在本说明书中,有时称为“(甲基)丙烯酸类树脂A”。)及光聚合引发剂的紫外线固化型压敏胶黏剂组成。关于(甲基)丙烯酸类树脂A,其至少一部分可以被交联剂交联。以下,对含有紫外线固化型压敏胶黏剂的成分进行详细说明。
·具有可链聚合的官能团的(甲基)丙烯酸类树脂
紫外线固化型压敏胶黏剂可以包含(甲基)丙烯酸类树脂A。在包含这种(甲基)丙烯酸类树脂A的情况下,官能团可以是选自丙烯酰基及甲基丙烯酰基中的至少一种。(甲基)丙烯酸类树脂中的官能团的含量可以为1.0mmol/g以上,也可以为1.1mmol/g以上或1.2mmol/g以上。若(甲基)丙烯酸类树脂A中的官能团的含量为1.0mmol/g以上,则能够在从压敏胶黏剂层上拾取附有黏合剂片的芯片前(在(F)工序前),抑制在附有黏合剂片的芯片的端部与压敏胶黏剂层之间发生剥离,并且能够抑制拾取性的降低。从拾取性的观点考虑,(甲基)丙烯酸类树脂A中的官能团的含量可以为1.5mmol/g以下。
(甲基)丙烯酸类树脂A能够通过使具有选自羟基、环氧丙基(环氧基)、氨基等中的至少一种官能团的(甲基)丙烯酸类树脂(以下,有时称为“(甲基)丙烯酸类树脂a”。)与后述的导入官能团的化合物进行反应而获得。(甲基)丙烯酸类树脂A也可称为(甲基)丙烯酸类树脂a与导入官能团的化合物的反应物。
(甲基)丙烯酸类树脂a能够通过公知的方法来合成。作为合成方法,例如,可以举出溶液聚合法、悬浮聚合法、乳化聚合法、总体聚合法、析出聚合法、气相聚合法、等离子聚合法、超临界聚合法。并且,作为聚合反应的种类,也可以举出诸如自由基聚合、阳离子聚合、阴离子聚合、活性自由基聚合、活性阳离子聚合、活性阴离子聚合、配位聚合、永生聚合等其他ATRP(原子移动自由基聚合)及RAFT(可逆加成裂解链转移聚合)等方法。其中,通过使用溶液聚合法进行自由基聚合来合成,除了经济性好、反应速率快、容易聚合控制等以外,还具有能够直接使用通过聚合而获得的树脂溶液来进行配合等优点。
其中,以通过使用溶液聚合法进行自由基聚合来获得(甲基)丙烯酸类树脂a的方法为例,对(甲基)丙烯酸类树脂a的合成法进行详细说明。
作为合成(甲基)丙烯酸类树脂a时使用的单体,只要是在一个分子中具有1个(甲基)丙烯酰基的单体则并无特别限制。作为其具体例,可以举出:甲基丙烯酸甲酯、乙基(甲基)丙烯酸酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸叔丁酯、丁氧基乙基(甲基)丙烯酸酯、异戊基(甲基)丙烯酸酯、己基(甲基)丙烯酸酯、2-乙基己基(甲基)丙烯酸酯、庚基(甲基)丙烯酸酯、辛基庚基(甲基)丙烯酸酯、壬基(甲基)丙烯酸酯、癸烷基(甲基)丙烯酸酯、十一烷基(甲基)丙烯酸酯、月桂基(甲基)丙烯酸酯、十三烷基(甲基)丙烯酸酯、十四烷基(甲基)丙烯酸酯、十五烷基(甲基)丙烯酸酯、十六烷基(甲基)丙烯酸酯、十八烷基(甲基)丙烯酸酯、二十二烷基(甲基)丙烯酸酯、甲氧基聚乙二醇(甲基)丙烯酸酯、乙氧基聚乙二醇(甲基)丙烯酸酯、甲氧基聚丙二醇(甲基)丙烯酸酯、乙氧基聚丙二醇(甲基)丙烯酸酯、单(2-(甲基)丙烯酰氧基乙基)琥珀酸酯等脂肪族(甲基)丙烯酸酯;环(甲基)丙烯酸戊酯、(甲基)丙烯酸环己酯、环(甲基)丙烯酸戊酯、二环戊烷基(甲基)丙烯酸酯、二环戊烯基(甲基)丙烯酸酯、异冰片基(甲基)丙烯酸酯、单(2-(甲基)丙烯酰氧基乙基)四氢邻苯二甲酸酯、单(2-(甲基)丙烯酰氧基乙基)六氢邻苯二甲酸酯等脂环式(甲基)丙烯酸酯;苄基(甲基)丙烯酸酯、苯基(甲基)丙烯酸酯、邻联苯基(甲基)丙烯酸酯、1-萘基(甲基)丙烯酸酯、2-萘基(甲基)丙烯酸酯、苯氧基乙基(甲基)丙烯酸酯、对枯基苯氧基乙基(甲基)丙烯酸酯、邻苯基苯氧基乙基(甲基)丙烯酸酯、1-萘氧基乙基(甲基)丙烯酸酯、2-萘氧基乙基(甲基)丙烯酸酯、苯氧基聚乙二醇(甲基)丙烯酸酯、壬基苯氧基聚乙二醇(甲基)丙烯酸酯、苯氧基聚丙二醇(甲基)丙烯酸酯、2-羟基-3-苯氧基丙基(甲基)丙烯酸酯、2-羟基-3-(邻苯基苯氧基)丙基(甲基)丙烯酸酯、2-羟基-3-(1-萘氧基)丙基(甲基)丙烯酸酯、2-羟基-3-(2-萘氧基)丙基(甲基)丙烯酸酯等芳香族(甲基)丙烯酸酯;2-四氢糠基(甲基)丙烯酸酯、N-(甲基)丙烯酰氧基乙基六氢邻苯二甲酰亚胺、2-(甲基)丙烯酰氧基乙基-N-咔唑等杂环式(甲基)丙烯酸酯、这些己内酯变性体、ω-羧基-聚己内酯单(甲基)丙烯酸酯、环氧丙基(甲基)丙烯酸酯、α-乙基环氧丙基(甲基)丙烯酸酯、α-丙基环氧丙基(甲基)丙烯酸酯、α-丁基环氧丙基(甲基)丙烯酸酯、2-甲基环氧丙基(甲基)丙烯酸酯、2-乙基环氧丙基(甲基)丙烯酸酯、2-丙基环氧丙基(甲基)丙烯酸酯、3,4-环氧基(甲基)丙烯酸丁酯、3,4-环氧基庚基(甲基)丙烯酸酯、α-乙基-6,7-环氧基庚基(甲基)丙烯酸酯、3,4-环氧基环己基甲基丙烯酸甲酯、邻乙烯基苄基环氧丙基醚、间乙烯基苄基环氧丙基醚、对乙烯基苄基环氧丙基醚等具有乙烯性不饱和基和环氧基的化合物;(2-乙基-2-氧杂环丁烷基)甲基丙烯酸甲酯、(2-甲基-2-氧杂环丁烷基)甲基丙烯酸甲酯、2-(2-乙基-2-氧杂环丁烷基)乙基(甲基)丙烯酸酯、2-(2-甲基-2-氧杂环丁烷基)乙基(甲基)丙烯酸酯、3-(2-乙基-2-氧杂环丁烷基)丙基(甲基)丙烯酸酯、3-(2-甲基-2-氧杂环丁烷基)丙基(甲基)丙烯酸酯等具有乙烯性不饱和基和氧环丁烷基的化合物;2-(甲基)丙烯酰氧基乙基异氰酸酯等具有乙烯性不饱和基和异氰酸酯基的化合物;2-羟基乙基(甲基)丙烯酸酯、2-羟基丙基(甲基)丙烯酸酯、4-羟基(甲基)丙烯酸丁酯、3-氯-2-羟基丙基(甲基)丙烯酸酯、2-羟基(甲基)丙烯酸丁酯等具有乙烯性不饱和基和羟基的化合物。能够通过将这些适当组合而获得作为目标的(甲基)丙烯酸类树脂a。
(甲基)丙烯酸类树脂a具有选自羟基、环氧丙基(环氧基)、氨基等中的至少一种官能团作为后述的导入官能团的化合物或与交联剂的反应点。作为用于合成具有羟基的(甲基)丙烯酸类树脂a的单体,例如,可以举出2-羟基乙基(甲基)丙烯酸酯、2-羟基丙基(甲基)丙烯酸酯、4-羟基(甲基)丙烯酸丁酯、3-氯-2-羟基丙基(甲基)丙烯酸酯、2-羟基(甲基)丙烯酸丁酯等具有乙烯性不饱和基和羟基的化合物等。
作为用于合成具有环氧丙基的(甲基)丙烯酸类树脂a的单体,可以举出环氧丙基(甲基)丙烯酸酯、α-乙基环氧丙基(甲基)丙烯酸酯、α-丙基环氧丙基(甲基)丙烯酸酯、α-丁基环氧丙基(甲基)丙烯酸酯、2-甲基环氧丙基(甲基)丙烯酸酯、2-乙基环氧丙基(甲基)丙烯酸酯、2-丙基环氧丙基(甲基)丙烯酸酯、3,4-环氧基(甲基)丙烯酸丁酯、3,4-环氧基庚基(甲基)丙烯酸酯、α-乙基-6,7-环氧基庚基(甲基)丙烯酸酯、3,4-环氧基环己基甲基丙烯酸甲酯、邻乙烯基苄基环氧丙基醚、间乙烯基苄基环氧丙基醚、对乙烯基苄基环氧丙基醚等具有乙烯性不饱和基和环氧基的化合物。
(甲基)丙烯酸类树脂A包含可链聚合的官能团。可链聚合的官能团例如是选自丙烯酰基及甲基丙烯酰基中的至少一种。可链聚合的官能团例如能够通过使具有选自如上所述的方式合成的羟基、环氧丙基(环氧基)、氨基等中的至少一种的官能团的(甲基)丙烯酸类树脂a和以下化合物(导入官能团的化合物)反应而导入到该(甲基)丙烯酸类树脂a中。作为导入官能团的化合物的具体例,可以举出:2-甲基丙烯酰氧基乙基异氰酸酯、α,α-二甲基-4-异丙烯基苄基异氰酸酯、烯丙基异氰酸酯、1,1-(双丙烯酰氧基甲基)乙基异氰酸酯;通过二异氰酸酯化合物或聚异氰酸酯化合物和羟基乙基(甲基)丙烯酸酯或4-羟基丁基乙基(甲基)丙烯酸酯进行反应而获得的丙烯酰单异氰酸酯化合物;通过二异氰酸酯化合物或聚异氰酸酯化合物、多元醇化合物、羟基乙基(甲基)丙烯酸酯进行反应而获得的丙烯酰单异氰酸酯化合物等。在这些中,导入官能团的化合物可以是2-甲基丙烯酰氧基乙基异氰酸酯。
(甲基)丙烯酸类树脂A可以主要以选自羟基、环氧丙基(环氧基)、氨基等中的至少一种官能团作为反应点,其反应点中的一部分通过交联剂而交联。即,(甲基)丙烯酸类树脂A中的至少一部分可以通过交联剂而交联。紫外线固化型压敏胶黏剂可以包含具有可链聚合的官能团的、通过交联剂而交联的(甲基)丙烯酸类树脂作为(甲基)丙烯酸类树脂A。
交联剂例如以控制压敏胶黏剂层的储能模量和/或粘着性为目的来使用。交联剂只要是在一个分子中具有2个以上官能团的化合物即可,该官能团能够与选自(甲基)丙烯酸类树脂A所具有的羟基、环氧丙基、氨基等中的至少一种官能团进行反应。作为通过(甲基)丙烯酸类树脂A和交联剂的反应而形成的键,例如,可以举出酯键、醚键、酰胺键、酰亚胺键、氨基甲酸酯键、脲键等。
交联剂例如可以是在一个分子中具有2个以上的异氰酸酯基的多官能异氰酸酯。若使用这种多官能异氰酸酯,则能够容易与(甲基)丙烯酸类树脂A所具有的羟基、环氧丙基、氨基等进行反应,形成牢固的交联结构。
作为在一个分子中具有2个以上的异氰酸酯基的多官能异氰酸酯,例如,可以举出2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、1,3-二甲苯二异氰酸酯、1,4-二甲苯二异氰酸酯、二苯基甲烷-4,4’-二异氰酸酯、二苯基甲烷-2,4’-二异氰酸酯、3-甲基二苯基甲烷二异氰酸酯、六亚甲基二异氰酸酯、异佛尔酮二异氰酸酯、二环己基甲烷-4,4’-二异氰酸酯、二环己基甲烷-2,4’-二异氰酸酯、赖氨酸异氰酸酯等异氰酸酯化合物等。
交联剂可以是多官能异氰酸酯和在一个分子中具有2个以上的羟基的多元醇的反应物(含有异氰酸酯基的低聚物)。作为在一个分子中具有2个以上的羟基的多元醇,例如,可以举出乙二醇、丙二醇、丁二醇、1,6-己二醇、1,8-辛二醇、1,9-壬二醇、1,10-癸二醇、1,11-十一烷二醇、1,12-十二烷二醇、甘油、三羟甲基丙烷、季戊四醇、二季戊四醇、1,4-环己二醇、1,3-环己二醇等。
在这些中,交联剂可以是在一个分子中具有2个以上的异氰酸酯基的多官能异氰酸酯和在一个分子中具有3个以上的羟基的多元醇的反应物(含有异氰酸酯基的低聚物)。通过将含有这种异氰酸酯基的低聚物用作交联剂,压敏胶黏剂层3形成致密的交联结构,由此,具有能够在拾取工序中抑制压敏胶黏剂附着于黏合剂层5的倾向。
使(甲基)丙烯酸类树脂A与交联剂反应时的交联剂的含量能够根据对压敏胶黏剂层求出的凝聚力、断裂伸长率、与黏合剂层的粘附性等来适当设定。具体而言,交联剂的含量相对于(甲基)丙烯酸类树脂A的总量100质量份,例如可以为0.1~10质量份,0.2~7质量份或0.3~5质量份。若交联剂的含量在这种范围内,则能够平衡性良好地兼顾切割工序中对压敏胶黏剂层要求的特性、以及在晶粒接合工序中对压敏胶黏剂层要求的特性,并且还能够获得优异的拾取性。
若交联剂的含量相对于(甲基)丙烯酸类树脂A的总量100质量份为0.1质量份以上,则具有不易使交联结构的形成变得不充分,并且在拾取工序中充分降低与黏合剂层的界面密接力,而在拾取时不易产生不良的倾向。另一方面,若交联剂的含量相对于(甲基)丙烯酸类树脂A的总量100质量份为10质量份以下,则不易使压敏胶黏剂层变得过硬,在扩展工序中具有芯片不易剥离的倾向。
(甲基)丙烯酸类树脂A可以是紫外线固化型压敏胶黏剂(或压敏胶黏剂层3)的主成分。(甲基)丙烯酸类树脂A的含量以紫外线固化型压敏胶黏剂(或压敏胶黏剂层3)的总量为基准,可以为80质量%以上、85质量%以上、90质量%以上、95质量%以上或98质量%以上。
·光聚合引发剂
光聚合引发剂只要是能够通过照射紫外线而发生链聚合的活性种,则并无特别限制。作为光聚合引发剂,例如,可以举出光自由基聚合引发剂等。其中,可链聚合的活性种是指通过与可链聚合的官能团反应而开始聚合反应的物质。
作为光自由基聚合引发剂,例如,可以举出:2,2-二甲氧基-1,2-二苯基乙烷-1-酮等苯偶姻缩酮;1-羟基环己基苯基甲酮、2-羟基-2-甲基-1-苯基丙烷-1-酮、1-[4-(2-羟基乙氧基)苯基]-2-羟基-2-甲基-1-丙烷-1-酮等α-羟基酮;2-苄基-2-二甲基氨基-1-(4-吗啉代苯基)-丁烷-1-酮、1,2-甲基-1-[4-(甲硫基)苯基]-2-吗啉代丙烷-1-酮等α-氨基酮;1-[4-(苯硫基)苯基]-1,2-辛二酮-2-(苯甲酰基)肟等肟酯;双(2,4,6-三甲基苯甲酰基)苯基氧化膦、双(2,6-二甲氧基苯甲酰基)-2,4,4-三甲基戊基氧化膦、2,4,6-三甲基苯甲酰基二苯基氧化膦等氧化膦;2-(邻氯苯基)-4,5-二苯基咪唑二聚体、2-(邻氯苯基)-4,5-二(甲氧基苯基)咪唑二聚体、2-(邻氟苯基)-4,5-二苯基咪唑二聚体、2-(邻甲氧基苯基)-4,5-二苯基咪唑二聚体、2-(对甲氧基苯基)-4,5-二苯基咪唑二聚体等2,4,5-三芳基咪唑二聚体;二苯甲酮、N,N,N’,N’-四甲基-4,4’-二氨基二苯甲酮、N,N,N’,N’-四乙基-4,4’-二氨基二苯甲酮、4-甲氧基-4’-二甲基氨基二苯甲酮等二苯基酮化合物;2-乙基蒽醌、菲醌、2-叔丁基蒽醌、八甲基蒽醌、1,2-苯蒽醌、2,3-苯蒽醌、2-苯基蒽醌、2,3-二苯基蒽醌、1-氯蒽醌、2-甲基蒽醌、1,4-萘醌、9,10-菲醌、2-甲基-1,4-萘醌、2,3-二甲基蒽醌等醌化合物;安息香甲醚、安息香***、安息香苯醚等安息香醚;安息香、甲基安息香、乙基安息香等安息香化合物;苄基二甲基缩酮等苄基化合物;9-苯吖啶、1,7-双(9,9’-吖啶基庚烷)等吖啶化合物;N-苯基甘氨酸、香豆素等。
紫外线固化型压敏胶黏剂中的光聚合引发剂的含量相对于(甲基)丙烯酸类树脂A的总量100质量份,可以为0.1~30质量份、0.3~10质量份或0.5~5质量份。若光聚合引发剂的含量相对于(甲基)丙烯酸类树脂A的总量100质量份为0.1质量份以上,则具有不易使压敏胶黏剂层在照射紫外线后充分地固化,并且不易引起拾取不良的倾向。若光聚合引发剂的含量相对于(甲基)丙烯酸类树脂A的总量100质量份为30质量份以下,则具有能够防止对黏合剂层的污染(向光聚合引发剂的黏合剂层转印)的倾向。
紫外线固化型压敏胶黏剂可以包含其他成分。作为其他成分,例如,可以举出除了具有可链聚合的官能团的(甲基)丙烯酸类树脂以外的树脂(丙烯酸单体或低聚物、氨基甲酸酯单体或低聚物等)、粘着性赋予剂(增稠剂等)等。
压敏胶黏剂层3的厚度只要根据扩展工序的条件(温度、张力等)适当设定即可,例如,可以是1~100μm,2~50μm,3~20μm或5~15μm。若压敏胶黏剂层3的厚度为1μm以上,则粘着性不易变得不充分,若为100μm以下,则在扩展时截口宽度变宽(销上推时不发生压力松弛),具有拾取不易变得不充分的倾向。
压敏胶黏剂层3形成于基材层1上。作为压敏胶黏剂层3的形成方法,能够采用公知的方法。例如,可以通过双层挤压法形成基材层1与压敏胶黏剂层3的层叠体,也可以制备紫外线固化型压敏胶黏剂的清漆(压敏胶黏剂层形成用清漆),将其涂敷于基材层1的表面上,或者在被脱模处理的膜上形成压敏胶黏剂层3,将其转印到基材层1上。
紫外线固化型压敏胶黏剂的清漆(压敏胶黏剂层形成用清漆)是能够溶解(甲基)丙烯酸类树脂A、光聚合引发剂及交联剂的有机溶剂,可以是通过加热而挥发的物质。作为有机溶剂的具体例,可以举出:甲苯、二甲苯、均三甲苯、异丙苯、对繖花烃等芳香族烃;四氢呋喃、1,4-二噁烷等环状醚;甲醇、乙醇、异丙醇、丁醇、乙二醇、丙二醇等醇;丙酮、甲乙酮、甲基异丁基酮、环己酮、4-羟基-4-甲基-2-戊酮等酮;乙酸甲酯、乙酸乙酯、乙酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁内酯等酯;亚乙基碳酸酯、亚丙基碳酸酯等碳酸酯;乙二醇单甲醚、乙二醇单***、乙二醇单丁醚、乙二醇二甲醚、乙二醇二***、丙二醇单甲醚、丙二醇单***、丙二醇二甲醚、丙二醇二***、二乙二醇单甲醚、二乙二醇单***、二乙二醇单丁醚、二乙二醇二甲醚、二乙二醇二***等多元醇烷基醚;乙二醇单甲醚乙酸酯、乙二醇单***乙酸酯、乙二醇单丁醚乙酸酯、丙二醇单甲醚乙酸酯、丙二醇单***乙酸酯、二乙二醇单甲醚乙酸酯、二乙二醇单***乙酸酯等多元醇烷基醚乙酸酯;N,N-二甲基甲酰乙酰胺、N,N-二甲基乙酰胺、N-甲基-2-吡咯烷酮等酰胺等。
在这些中,从溶解性及沸点的观点考虑,有机溶剂例如可以是选自由甲苯、甲醇、乙醇、异丙醇、丙酮、甲乙酮、甲基异丁基酮、环己酮、乙酸甲酯、乙酸乙酯、乙酸丁酯、乙二醇单甲醚、乙二醇单***、丙二醇单甲醚、丙二醇单***、二乙二醇二甲醚、乙二醇单甲醚乙酸酯、丙二醇单甲醚乙酸酯及N,N-二甲基乙酰胺组成的组中的至少一种。清漆的固体成分浓度通常为10~60质量%。
(基材层)
基材层1能够使用公知的聚合物片或膜,只要能够在低温条件下实施扩展工序,则并没有特别限制。作为基材层1的具体例,可以举出结晶性聚丙烯、无定形聚丙、高密度聚乙烯、中密度聚乙烯、低密度聚乙烯、超低密度聚乙烯、低密度直链聚乙烯、聚丁烯、聚甲基戊烯等聚烯烃、乙烯-乙酸乙烯基共聚物、离聚物树脂、乙烯-(甲基)丙烯酸类共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨基甲酸酯、聚对苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯、聚碳酸酯、聚酰亚胺、聚醚醚酮、聚酰亚胺、聚醚酰亚胺、聚酰胺、全芳香族聚酰胺、聚苯硫醚、芳酰胺(纸)、玻璃、玻璃布、氟树脂、聚氯乙烯、聚偏二氯乙烯、纤维素类树脂、硅酮树脂或在这些中混合了塑化剂的混合物,或者通过电子线照射而实施交联的固化物。
基材层1具有以选自由聚乙烯、聚丙烯、聚乙烯-聚丙烯无规共聚物及聚乙烯-聚丙烯嵌段共聚物组成的组中的至少一种树脂作为主成分的表面,该表面可以与压敏胶黏剂层3相接。这些树脂从杨氏模量、压力松弛性、熔点等特性、价格方面、使用后的废料回收等观点考虑,也可以成为良好的基材。基材层1可以是单层,也可以根据需要具有由不同的材质组成的层层叠而得的多层结构。从控制与压敏胶黏剂层3的粘附性的观点考虑,基材层1可以对其表面实施消光处理、电晕处理等表面粗糙化处理。
基材层1的厚度例如可以为10~200μm或20~170μm。
切割膜7(包含基材层1及设置于基材层1上的由紫外线固化型压敏胶黏剂组成的压敏胶黏剂层3的切割膜7)在-15℃下的储能模量可以为100MPa以上。若切割膜7在-15℃下的储能模量在这种范围内,则在冷却扩展工序((D)工序)中,通过扩展时的冲击及压力,而具有附有黏合剂片的芯片的外周部的黏合剂断裂,并且变得容易分割成各个附有黏合剂片的芯片的倾向。切割膜7在-15℃下的储能模量可以为300MPa以上或500MPa以上。切割膜7在-15℃下的储能模量例如可以为1000MPa以下。另外,储能模量表示通过基于以下装置及条件的测定而获得的值。
·动态粘弹性测定装置:Rheogel E-4000(Universal Building Materials Co.,Ltd.制造)
·测定对象:紫外线固化型压敏胶黏剂的膜状成形物(切割膜)(宽度:4mm,长度:40mm)
·升温速度:3℃/分钟
·频率:1Hz
·夹头间的距离:20mm
·负载条件:自动静负载
<黏合剂层>
在黏合剂层5中,能够应用构成公知的晶粒接合膜的黏合剂组合物。具体而言,构成黏合剂层5的黏合剂组合物可以包含环氧树脂、环氧树脂固化剂及含有反应性基团的(甲基)丙烯酸类共聚物。包含黏合剂层5的黏合剂组合物可以进一步包含固化促进剂及填料。根据包含这些成分的黏合剂层5,存在具有如下特征的倾向:芯片/基板的间、芯片/芯片的间的接着性优异,并且,还能够赋予电极注入性、导线注入性等,并且在晶粒接合工序中,能够在低温下接合,可在短时间内得到优异的固化,用密封剂成形后具有优异的可靠性等。
作为环氧树脂,例如,可以举出双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、脂环式环氧树脂、脂肪族链状环氧树脂、苯酚酚醛清漆型环氧树脂、甲酚酚醛清漆型环氧树脂、双酚A酚醛清漆型环氧树脂、双酚的二缩水甘油醚化物、萘二醇的二缩水甘油醚化物、酚类二缩水甘油醚化物、醇类的二缩水甘油醚化物及这些烷基取代体、卤化物、加氢物等二官能环氧树脂、酚醛清漆型环氧树脂等。并且,可以应用多官能环氧树脂、含杂环环氧树脂等通常已知的其他环氧树脂。另外,在不损害特性的范围内,除了环氧树脂以外的成分,还可以作为杂质而包含。
作为环氧树脂固化剂,例如,可以举出能够在没有催化剂或在氧催化剂的存在下,使酚化合物和2价的连接基团即二甲苯化合物反应而获得的酚醛树脂等。作为制造酚醛树脂时所使用的酚化合物,例如,可以举出苯酚、邻甲酚、间甲酚、对甲酚、邻乙基苯酚、对乙基苯酚、邻正丙基苯酚、间正丙基苯酚、对正丙基苯酚、邻异丙基苯酚、间异丙基苯酚、对异丙基苯酚、邻正丁基苯酚、间正丁基苯酚、对正丁基苯酚、邻异丁基苯酚、间异丁基苯酚、对异丁基苯酚、辛基苯酚、壬基苯酚、2,4-二甲苯酚、2,6-二甲苯酚、3,5-二甲苯酚、2,4,6-三甲基苯酚、间苯二酚、邻苯二酚、氢醌、4-甲氧基苯酚、邻苯基苯酚、间苯基苯酚、对苯基苯酚、对环己基苯酚、邻烯丙基苯酚、对烯丙基苯酚、邻苄基苯酚、对苄基苯酚、邻氯苯酚、对氯苯酚、邻溴苯酚、对溴苯酚、邻碘苯酚、对碘苯酚、邻氟苯酚、间氟苯酚、对氟苯酚等。作为在制造酚醛树脂时所使用的2价的连接基团即二甲苯化合物,能够使用以下示出的二甲苯二卤化物、二甲苯二乙二醇及其衍生物。即,作为二甲苯化合物的具体例,可以举出α,α’-二氯-对二甲苯、α,α’-二氯-间二甲苯、α,α’-二氯-邻二甲苯、α,α’-二溴-对二甲苯、α,α’-二溴-间二甲苯、α,α’-二溴-邻二甲苯、α,α’-二碘-对二甲苯、α,α’-二碘-间二甲苯、α,α’-二碘-邻二甲苯、α,α’-二羟基-对二甲苯、α,α’-二羟基-间二甲苯、α,α’-二羟基-邻二甲苯、α,α’-二甲氧基-对二甲苯、α,α’-二甲氧基-间二甲苯、α,α’-二甲氧基-邻二甲苯、α,α’-二乙氧基-对二甲苯、α,α’-二乙氧基-间二甲苯、α,α’-二乙氧基-邻二甲苯、α,α’-二-正丙氧基-对二甲苯、α,α’-二正丙氧基-间二甲苯、α,α’-二正丙氧基-邻二甲苯、α,α’-二异丙氧基-对二甲苯、α,α’-二异丙氧基-间二甲苯、α,α’-二异丙氧基-邻二甲苯、α,α’-二正丁氧基-对二甲苯、α,α’-二正丁氧基-间二甲苯、α,α’-二正丁氧基-邻二甲苯、α,α’-二异丁氧基-对二甲苯、α,α’-二异丁氧基-间二甲苯、α,α’-二异丁氧基-邻二甲苯、α,α’-二叔丁氧基-对二甲苯、α,α’-二叔丁氧基-间二甲苯、α,α’-二叔丁氧基-邻二甲苯等。
在使酚化合物与二甲苯化合物进行反应时,能够通过使用盐酸、硫酸、磷酸、聚磷酸等无机酸类;二甲基硫酸、二乙基硫酸、对甲苯磺酸、甲磺酸、乙烷磺酸等有机羧酸类;三氟甲磺酸等超强酸类;烷烃磺酸型离子交换树脂等强酸性离子交换树脂类;全氟烷烃磺酸型离子交换树脂等超强酸性离子交换树脂类(产品名称:纳菲,Nafion,Du Pont deNemours,Inc.制造,“Nafion”为注册商标);天然和合成沸石类;及活性白土(酸性白土)类等酸性催化剂,在50~250℃下,作为原料的二甲苯化合物实质上消失,并且使其反应直至反应组成成为恒定而获得酚醛树脂。反应时间能够根据原料及反应温度来适当设定,例如,能够设为1~15小时左右,能够通过GPC(凝胶渗透色谱法)等一边跟踪反应组成一边进行确定。
含有反应性基团的(甲基)丙烯酸类共聚物例如可以是含有环氧基的(甲基)丙烯酸类共聚物。含有环氧基的(甲基)丙烯酸类共聚物可以是通过环氧丙基(甲基)丙烯酸酯作为原料而获得的共聚物,该环氧丙基(甲基)丙烯酸酯的量使用相对于所获得的共聚物成为0.5~6质量%的量。若环氧丙基(甲基)丙烯酸酯的含量为0.5质量%以上,则变得容易获得高接着力,另一方面,在6质量%以下时,具有能够抑制胶化的倾向。构成含有反应性基团的(甲基)丙烯酸类共聚物的剩余部分的单体,例如,可以是甲基丙烯酸甲酯等具有碳原子数1~8的烷基的烷基(甲基)丙烯酸酯、苯乙烯、丙烯腈等。在这些中,构成含有反应性基团的(甲基)丙烯酸类共聚物的剩余部分的单体,可以是乙基(甲基)丙烯酸酯和/或(甲基)丙烯酸丁酯。混合比能够考虑含有反应性基团的(甲基)丙烯酸类共聚物的Tg来进行调整。若Tg为-10℃以上,则具有能够抑制B阶段状态下的黏合剂层5的粘性变得过大的倾向,并且具有操作性优异的倾向。另外,含有环氧基的(甲基)丙烯酸类共聚物的玻璃转移温(Tg)例如可以为30℃以下。聚合方法并没有特别限制,例如,可以举出珠状聚合、溶液聚合等。作为市售的含有环氧基的(甲基)丙烯酸类共聚物,例如,可以举出HTR-860P-3(产品名称,NagaseChemtex Corporation制造)。
从接着性及耐热性的观点考虑,含有环氧基的(甲基)丙烯酸类共聚物的重均分子量可以为10万以上,也可以为30万~300万或50万~200万。若重均分子量为300万以下,则能够抑制芯片与支撑芯片的基板之间的填充性的降低。重均分子量是通过凝胶渗透色谱法(GPC)并使用基于标准聚苯乙烯的校准曲线的聚苯乙烯换算值。
作为固化促进剂,例如,可以举出叔胺、咪唑类、季铵盐类等。作为固化促进剂的具体例,可以举出2-甲基咪唑、2-乙基-4-甲基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-苯基咪唑鎓偏苯三酸酯。
填料可以为无机填料。作为无机填料的具体例,可以举出氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、硼酸铝鬚晶、氮化硼、结晶二氧化硅、无定形二氧化硅。
黏合剂层5的厚度例如可以为1~300μm、5~150μm或10~100μm。若黏合剂层5的厚度为1μm以上,则具有接着性更优异,另一方面,若为300μm以下,则扩展时的分割性及拾取性更加优异的倾向。
另外,黏合剂层5可以是不包含热固化性树脂(环氧树脂及环氧树脂固化剂)的方式。例如,在黏合剂层5包含含有反应性基团的(甲基)丙烯酸类共聚物的情况下,黏合剂层5可以包含含有反应性基团的(甲基)丙烯酸类共聚物、固化促进剂及填料。
在切割膜7的压敏胶黏剂层3上形成黏合剂层5的方法能够采用公知的方法。作为黏合剂层5的形成方法,例如,可以举出制备黏合剂组合物的清漆(黏合剂层形成用清漆),并将其涂敷于压敏胶黏剂层3的表面的方法,形成包含被脱模处理的膜和设置于被脱模处理的膜上的黏合剂层5的晶粒接合膜,并将晶粒接合膜中的黏合剂层5贴附于压敏胶黏剂层3的方法等。黏合剂组合物的清漆(黏合剂层形成用清漆)是能够溶解除了填料以外的各成分的有机溶剂,可以是通过加热而挥发的物质。作为有机溶剂的具体例,能够例示出与紫外线固化型压敏胶黏剂的清漆中的有机溶剂相同的物质。
膜10例如能够通过如下方法来制造,该方法包括:准备切割膜7的工序,包含基材层1及设置于基材层1上的由紫外线固化型压敏胶黏剂组成的压敏胶黏剂层3;及在切割膜7的压敏胶黏剂层3上设置黏合剂层5的工序。
[半导体装置及其制造方法]
图3是半导体装置的一实施方式的示意剖视图。图3所示的半导体装置100具备:基板70,在基板70的表面上层叠的4个芯片S1、S2、S3、S4,基板70的表面上的电极(未图示),与4个芯片S1、S2、S3、S4电连接的导线W1、W2、W3、W4,以及将这些进行密封的密封层50。
基板70例如可以是有机基板,也可以是引线框等金属基板。从抑制半导体装置100的翘曲的观点考虑,基板70的厚度例如可以为70~140μm,也可以为80~100μm。
4个芯片S1、S2、S3、S4可以经由黏合剂片5P的固化物5C来层叠。平面观察时的芯片S1、S2、S3、S4的形状例如是正方形或长方形。芯片S1、S2、S3、S4的面积可以为30~250mm2,也可以为40~200mm2或50~150mm2。芯片S1、S2、S3、S4的一边的长度,例如为6.0mm以上,可以为7.0~18mm或8.0~15mm。芯片S1、S2、S3、S4的厚度例如为10~100μm,也可以为20~80μm。另外,4个芯片S1、S2、S3、S4的一边的长度可以相同,也可以互不相同,关于厚度也相同。并且,4个芯片S1、S2、S3、S4可以是尺寸较小的芯片。即,芯片S1、S2、S3、S4的面积例如可以小于30mm2,也可以为0.1~20mm2或1~15mm2。
半导体装置100的制造方法具备以下工序。
(A)准备切割晶粒接合一体型膜的工序(准备工序),该切割晶粒接合一体型膜具备:切割膜,其包含基材层及设置于基材层上的由紫外线固化型压敏胶黏剂组成的压敏胶黏剂层;及黏合剂层,其设置于切割膜的压敏胶黏剂层上
(B)切割晶圆的工序(切割工序)
(C)对切割晶粒接合一体型膜的黏合剂层贴附晶圆的工序(晶圆贴附工序)
(D)通过在冷却条件下扩展基材层而获得晶圆及黏合剂层单片化而成的附有黏合剂片的芯片的工序(冷却扩展工序)
(E)通过对压敏胶黏剂层照射紫外线而降低压敏胶黏剂层的相对于附有黏合剂片的芯片的胶接力的工序(紫外线照射工序)
(F)从压敏胶黏剂层上拾取附有黏合剂片的芯片的工序(拾取工序)
(G)将所拾取的附有黏合剂片的芯片安装于基板或其他芯片上的工序(安装工序)
在(A)工序中准备的切割晶粒接合一体型膜中,在温度23℃下以剥离角度30°及剥离速度600mm/分钟的条件测定的、压敏胶黏剂层的相对于黏合剂层的胶接力为15N/25mm以上。在(A)工序中准备的切割晶粒接合一体型膜中,切割膜在-15℃下的储能模量为100MPa以上。
一边参考图4及图5,一边对附有黏合剂片的芯片8的制作方法的一例进行说明。首先,准备上述膜10((A)工序(准备工序))。
接着,在晶圆W的电路面Wa上贴附保护膜(有时称为“BG带”。),在晶圆W上照射激光,而形成多条预定切割线L((B)工序(切割工序),参考图4(a))。将其称为隐形切割。隐形切割能够对厚度薄的晶圆W(例如,100μm以下)适当地使用。其后,根据需要,可以对晶圆W进行用于调整晶圆W的厚度的背面磨光处理、以及用于抛光晶圆W的抛光处理。另外,在此对基于激光的隐形切割进行说明,但也可以代替隐形切割而通过刀片来隐形切割晶圆W。有时将其称为隐形切割的切割。隐形切割表示不切割晶圆W而形成与晶圆W的预定切割线L对应的切口。
接着,如图4(a)所示,对膜10的黏合剂层5贴附晶圆W的背面Wb((B)工序(晶圆贴附工序))。此时,也可以对压敏胶黏剂层3贴附切割环DR。
接着,如图4(b)所示,通过-15~0℃的温度条件下进行冷却扩展,而将晶圆W及黏合剂层5单片化((D)工序(冷却扩展工序))。即,如图4(b)所示,通过环Ra上推基材层1中的切割环DR的内侧区域1a,而对基材层1赋予张力。由此,晶圆W沿着预定切割线L被分割,并且随的黏合剂层5被黏合剂片5P分割,在压敏胶黏剂层3的表面上获得多个附有黏合剂片的芯片8。附有黏合剂片的芯片8由芯片S和黏合剂片5P构成。
接着,通过将基材层1中的切割环DR的内侧区域1a进行加热而使内侧区域1a收缩(热收缩)。图5(a)是示意性地表示通过加热器H的鼓风而加热内侧区域1a的状态的剖视图。通过将内侧区域1a收缩成环状而对基材层1赋予张力,能够扩大相邻的附有黏合剂片的芯片8的间隔。由此,能够更进一步抑制拾取错误的发生,并且能够提高拾取工序中的附有黏合剂片的芯片8的可见性。
接着,如图5(b)所示,通过照射紫外线而降低压敏胶黏剂层3的胶接力((E)工序(紫外线照射工序))。紫外线对压敏胶黏剂层3的照度例如可以为1~200mW/cm2,10~150mW/cm2或30~100mW/cm2。紫外线对压敏胶黏剂层3的照射量例如为10~1000mJ/cm2,也可以为50~700mJ/cm2或100~500mJ/cm2。其后,如图5(c)所示,通过用上推夹具42上推附有黏合剂片的芯片8而将附有黏合剂片的芯片8从压敏胶黏剂层3上剥离,并且用吸夹头44吸引来拾取附有黏合剂片的芯片8((F)工序(拾取工序))。
附有黏合剂片的芯片8被输送至半导体装置的组装装置(未图示),压接于电路基板等上((G)工序(安装工序))。如图6(a)所示,经由黏合剂片5P将第一段的芯片S1(芯片S)压接到基板70的规定的位置。接着,通过加热而使黏合剂片5P固化(晶粒接合工序)。由此,黏合剂片5P通过固化而成为固化物5C。从减小空隙的观点考虑,黏合剂片5P的固化处理可以在加压氛围气下实施。
与对基板70安装芯片S1同样地,在芯片S1的表面上安装第二段的芯片S2。此外,通过安装第三段及第四段的芯片S3、S4而制作图6(b)所示的结构体60。能够通过在用导线W1、W2、W3、W4分别将芯片S1、S2、S3、S4和基板70进行电连接后,形成用于密封半导体元件及导线的密封层50,并且通过密封半导体元件及导线而制作图3所示的半导体装置100。
实施例
以下,基于实施例对本发明及进行具体说明,但本发明并不限定于这些实施例。另外,若没有特别记载,则药品使用了均使用了试剂(市售品)。
<制造例1>
[(甲基)丙烯酸类树脂(A-1)的合成]
在具备并安装了三合一马达、搅拌桨及氮气导入管的容量为2000mL的烧瓶中,加入以下成分。
·乙酸乙酯(溶剂):635质量份
·丙烯酸2-乙基己酯:395质量份
·丙烯酸2-羟乙酯:100质量份
·甲基丙烯酸:5质量份
·偶氮二异丁腈:0.08质量份
将内容物搅拌至充分均匀后,以500mL/分钟的流量实施60分钟的鼓泡,对***中的溶解氧进行了脱气。经1小时升温至78℃,升温后聚合了6小时。接着,将反应溶液移送至具备并安装了三合一马达、搅拌桨及及氮气导入管的容量2000mL的压力釜中,在120℃、0.28Mpa的条件下加热4.5小时后,冷却至室温(25℃,以下相同)。
接着,加入490质量份的乙酸乙酯并进行搅拌,稀释了内容物。向其中添加二月桂酸二辛基锡0.10质量份作为氨基甲酸酯化催化剂,然后加入2-甲基丙烯酰氧基乙基异氰酸酯(SHOWA DENKO K.K.制造,Karenz MOI(产品名称))105.3质量份,在70℃下反应6小时后,冷却至室温。接着,进一步加入乙酸乙酯,将(甲基)丙烯酸类树脂溶液中的不挥发成分含量调整为35质量%,获得了制造例1的包含具有可链聚合的官能团的(甲基)丙烯酸类树脂(A-1)的溶液。
<制造例2>
[(甲基)丙烯酸类树脂(A-2)的合成]
除了将在表1的制造例1所示的原料单体组成变更为表1的制造例2所示的原料单体组成以外,以与制造例1相同的方法获得了包含制造例2的(甲基)丙烯酸类树脂(A-2)的溶液。将制造例2的(甲基)丙烯酸类树脂(A-2)的特性的测定结果示于表1中。
<制造例3>
[(甲基)丙烯酸类树脂(A-3)的合成]
除了将表1的制造例1所示的原料单体组成变更为表1的制造例3所示的原料单体组成以外,以与制造例1相同的方法获得了包含制造例3的(甲基)丙烯酸类树脂(A-3)的溶液。将制造例3的(甲基)丙烯酸类树脂(A-3)的特性的测定结果示于表1中。
[表1]
<实施例1>
[切割膜(压敏胶黏剂层)的制作]
通过混合以下成分,制备了紫外线固化型压敏胶黏剂的清漆(压敏胶黏剂层形成用清漆)(参考表2)。乙酸乙酯(溶剂)的量调整为清漆的总固体成分含量成为25质量%。
·制造例1的包含(甲基)丙烯酸类树脂(A-1)的溶液:100质量份(固体成分)
·光聚合引发剂(B-1)1-羟基环己基苯基甲酮(IGM RESINS B.V.公司制造,Omnirad 184,“Omnirad”为注册商标):1.0质量份
·光聚合引发剂(B-2)苯基双(2,4,6-三甲基苯甲酰基)氧化膦(IGM RESINS B.V.公司制造,Omnirad 819,“Omnirad”为注册商标):0.2质量份
·交联剂(C-1)(多官能异氰酸酯(甲苯二异氰酸酯与三羟甲基丙烷的反应物),Nippon Polyurethane Industry Co.,Ltd.制造,Coronate L,固体成分:75%):2.0质量份(固体成分)
·乙酸乙酯(溶剂)
准备了在一个表面实施了脱模处理的聚对苯二甲酸乙二酯膜(宽度450mm,长度500mm,厚度38μm)。在实施了脱模处理的面上,使用涂敷器涂布紫外线固化型压敏胶黏剂的清漆后,在80℃下干燥了3分钟。由此获得了由聚对苯二甲酸乙二酯膜和在其上形成的厚度8μm的压敏胶黏剂层组成的层叠体(切割膜)。
准备了在一个表面实施了电晕处理的聚烯烃膜(宽度450mm,长度500mm,厚度90μm)。在室温下贴合了实施了电晕处理的面和上述层叠体的压敏胶黏剂层。接着,通过用橡胶辊按压,而将压敏胶黏剂层转印到聚烯烃膜(覆盖膜)。其后,通过在室温下放置3天,而获得了附有覆盖膜的切割膜。
[晶粒接合膜(黏合剂层)的制作]
通过混合以下成分,而制备了黏合剂层形成用清漆。首先,在包含以下成分的混合物中加入环己酮(溶剂)并进行搅拌混合后,进一步使用珠磨机混錬了90分钟。
·环氧树脂(YDCN-700-10(产品名称),NIPPON STEEL Chemical&Material Co.,Ltd.制造,甲酚酚醛清漆型环氧树脂,环氧当量:210,分子量:1200,软化点:80℃):11.0质量份
·环氧树脂(EXA-830CRP(产品名称),DIC CORPORATION制造,双酚F型环氧树脂,环氧当量:160,分子量:1800,软化点:85℃):13.0质量份
·酚醛树脂(Millex XLC-LL(产品名称),Mitsui Chemicals,Inc.制造,酚醛树脂,羟基当量:175,吸水率:1.8%,350℃下的加热重量减少率:4%):18.7质量份
·硅烷偶联剂(NUC A-189(产品名称)NUC公司制造,γ-巯基丙基三甲氧基硅烷):0.1质量份
·硅烷偶联剂(NUC A-1160(产品名称),ENEOS NUC Corporation制造,γ-脲基丙基三乙氧基硅烷):0.2质量份
·填料(SC2050-HLG(产品名称),ADMATECHS CO.,LTD.制造,二氧化硅,平均粒径0.500μm):39质量份
在如上述那样获得的混合物中,进一步加入以下成分之后,经过搅拌混合及真空脱气的工序,获得了黏合剂层形成用清漆。
·含有环氧基的丙烯酸类共聚物(HTR-860P-3(产品名称),Nagase ChemtexCorporation制造,重均分子量:80万):16质量份
·固化促进剂(Curesol 2PZ-CN(产品名称),SHIKOKU CHEMICALS CORPORATION制造,1-氰基乙基-2-苯基咪唑,“Curesol”为注册商标)0.1质量份
准备了聚对苯二甲酸乙二酯膜(厚度35μm),其一个表面被实施了脱模处理。在实施了脱模处理的面上,使用涂敷器涂布黏合剂层形成用清漆后,在140℃下加热干燥了5分钟。由此,获得了由聚对苯二甲酸乙二酯膜(载子膜)、以及形成于其上的厚度25μm的黏合剂层(B阶段状态)组成的层叠体(晶粒接合膜)。
[切割晶粒接合一体型膜的制作]
将由黏合剂层和载子膜组成的晶粒接合膜切割成每个载体膜为直径312mm的圆形。在所切割的晶粒接合膜上,在室温下贴附剥离了聚对苯二甲酸乙二酯膜的切割膜,然后在室温下放置1天。其后,将切割膜切割成直径370mm的圆形。以这种方式获得了用于供后述各种评价试验的多个实施例1的切割晶粒接合一体型膜。
<实施例2>
除了将压敏胶黏剂层的厚度从8μm变更为10μm以外,以与实施例1相同的方式获得了多个实施例2的切割晶粒接合一体型膜。
<实施例3>
除了将制作切割膜(压敏胶黏剂层)时的交联剂(C-1)的含量从2.0质量份(固体成分)变更为4.0质量份(固体成分)以外,以与实施例2相同的方式获得了多个实施例3的切割晶粒接合一体型膜。
<比较例1>
除了将表2的实施例2的压敏胶黏剂层的组成变更为表2的比较例1的压敏胶黏剂层的组成以外,以与实施例2相同的方式获得了多个比较例1的切割晶粒接合一体型膜。
<比较例2>
除了将表2的实施例2的压敏胶黏剂层的组成变更为表2的比较例2的压敏胶黏剂层的组成以外,以与实施例2相同的方式获得了多个比较例1的切割晶粒接合一体型膜。
[评价试验]
(1)压敏胶黏剂层的相对于黏合剂的胶接力(30°剥离强度)的测定
将紫外线照射前的压敏胶黏剂层的相对于黏合剂的胶接力及照射紫外线后的压敏胶黏剂层的胶接力,通过测定30°剥离强度而进行了评价。关于紫外线照射前的压敏胶黏剂层的测定试样,通过将切割晶粒接合一体型膜切出宽度25mm及长度100mm而获得。关于照射紫外线后的压敏胶黏剂层的测定试样,通过将切割晶粒接合一体型膜切出宽度25mm及长度100mm,并使用紫外线照射装置(GS Yuasa Corporation,传送带紫外线照射装置CS60)对其照射照度70mW/cm2及照射量150mJ/cm2的紫外线(主波长:365nm)而获得。使用拉伸试验机(Kyowa Interface Science Co.,Ltd.制造,拉伸试验机“VPA-2”),从各自的测定试样中测定了压敏胶黏剂层的相对于黏合剂层的剥离强度量。测定条件设为剥离角度30°及剥离速度600mm/分钟。试样的保存及剥离强度的测定,在温度23℃、相对湿度40%的环境下进行。将结果示于表2中。另外,剥离强度的测定上限为“20N/25mm”,表2中的“>20”表示超过测定上限。
(2)切割膜在-15℃下的储能模量的测定
对切割膜进行动态粘弹性测定,测定了-15℃下的储能模量。将切割膜切出宽度4mm及长度40mm,获得了试验片。使用动态粘弹性测定装置(Rheogel E-4000(UniversalBuilding Materials Co.,Ltd.制造)),以频率1Hz,升温速度3℃/min,夹头间距离20mm,自动静负载条件下对所切出的试验片测定了储能模量。将结果示于表2中。另外,在表2中,“-”表示未测定。
(3)拾取性的评价
准备12英寸的晶圆及切割晶粒接合一体型膜,依次进行切割工序、晶圆贴附工序、冷却扩展工序、紫外线照射工序及拾取工序。在切割工序中,通过隐形切割成12mm×6mm的矩形状而在晶圆上形成预定的分离线。其后,为了调整晶圆的厚度,进行背面磨光处理,将晶圆的厚度调整为35μm。在晶圆贴附工序中,在70℃下对在上述制作的各自的切割晶粒接合一体型膜的黏合剂层贴附了晶圆。在冷却扩展工序中,使用模具分离器(DISCOCorporation制造,型号DDS-2300),并在以下条件下进行了冷却扩展及随其后的热收缩。接着,通过该模具分离器内的清洗机构,在以下条件下进行了清洗及干燥。
(冷却扩展条件)
冷却温度:-15℃,冷却时间:90秒,扩展量:10mm,扩展速度:200mm/s,扩展后的保留时间:3秒
(热收缩条件)
加热器温度:220℃,加热器旋转速度:5°/秒,扩展量:8mm
(清洗条件)
清洗时间:120秒,转速:600旋转/分钟
(干燥条件)
干燥时间:60秒,转速:1500旋转/分钟
在紫外线照射工序中,使用紫外线照射装置(GS Yuasa Corporation,传送带紫外线照射装置CS60),照射了照度70mW/cm2及照射量150mJ/cm2的紫外线(主波长:365nm)。在拾取工序中,在以下条件下拾取了20个附有黏合剂片的芯片。
(拾取条件)
·贴片机装置:DB800-HSD(Hitachi High-Technologies Corporation制造)
·上推销:EJECTOR NEEDLE SEN2-83-05(直径:0.7mm,前端形状:半径350μm的半球,Micro Mechanics公司制造)
·上推高度:100μm
·上推速度:10mm/分钟
另外,关于拾取性,将拾取的成功个数为20个(100%)的情况评价为“A”,将拾取的成功率为16~19个的情况评价为“B”,将拾取的成功率为15个以下的情况评价为“C”。将结果示于表2中。
(4)黏合剂层的分割性及附有黏合剂片的芯片的剥离性
(3)在评价拾取性后,目视观察了拾取的附有黏合剂片的芯片。即使在使用了实施例1~3及比较例1、2的切割晶粒接合一体型膜的情况下,黏合剂层的分割性也良好。接着,目视观察了所拾取的附有黏合剂片的芯片的黏合剂层表面及压敏胶黏剂层表面。在使用比较例1、2的切割晶粒接合一体型膜的情况下,在该黏合剂层表面确认到被转印有从扩展的工序(从(D)工序)至紫外线照射工序((E)工序)之间产生的附有黏合剂片的芯片的端部与压敏胶黏剂层之间的剥离的痕迹。另一方面,在使用了实施例1~3的切割晶粒接合一体型膜的情况下,未观测到附有黏合剂片的芯片的端部与压敏胶黏剂层之间的剥离的痕迹,附有黏合剂片的芯片的剥离性良好。
[表2]
如表2所示,实施例1~3的切割晶粒接合一体型膜的拾取性比比较例1、2的切割晶粒接合一体型膜良好。从以上结果可确认到本发明的切割晶粒接合一体型膜能够抑制拾取性的降低。
符号说明
1-基材层,3-压敏胶黏剂层,5-胶粘剂层,7-切割薄膜,8-附有黏合剂片的芯片,10-切割晶粒接合一体型膜,W-晶圆。
Claims (6)
1.一种半导体装置的制造方法,其包括:
(A)准备切割晶粒接合一体型膜的工序,所述切割晶粒接合一体型膜具备:切割膜,其包含基材层及设置于所述基材层上的由紫外线固化型压敏胶黏剂组成的压敏胶黏剂层;及黏合剂层,其设置于所述切割膜的所述压敏胶黏剂层上;
(B)切割晶圆的工序;
(C)对所述切割晶粒接合一体型膜的所述黏合剂层贴附所述晶圆的工序;
(D)通过在冷却条件下扩展所述基材层而获得所述晶圆及所述黏合剂层单片化而成的附有黏合剂片的芯片的工序;
(E)通过对所述压敏胶黏剂层照射紫外线而降低所述压敏胶黏剂层的相对于所述附有黏合剂片的芯片的胶接力的工序;
(F)从所述压敏胶黏剂层上拾取所述附有黏合剂片的芯片的工序;及
(G)将所拾取的所述附有黏合剂片的芯片安装于基板或其他芯片上的工序,
在所述切割晶粒接合一体型膜中,在温度23℃下以剥离角度30°及剥离速度600mm/分钟的条件测定的、所述压敏胶黏剂层的相对于所述黏合剂层的胶接力为15N/25mm以上。
2.根据权利要求1所述的半导体装置的制造方法,其中,
在对所述压敏胶黏剂层照射照度70mW/cm2及照射量150mJ/cm2的紫外线后,在温度23℃下以剥离角度30°及剥离速度600mm/分钟的条件测定的、照射紫外线后的所述压敏胶黏剂层的相对于所述黏合剂层的胶接力为1N/25mm以下。
3.根据权利要求1或2所述的半导体装置的制造方法,其中,
在所述切割晶粒接合一体型膜中,所述切割膜在-15℃下的储能模量为100MPa以上。
4.一种切割晶粒接合一体型膜,其具备:
切割膜,其包含基材层及设置于所述基材层上的由紫外线固化型压敏胶黏剂组成的压敏胶黏剂层;及黏合剂层,其设置于所述切割膜的所述压敏胶黏剂层上,
在温度23℃下以剥离角度30°及剥离速度600mm/分钟的条件测定的、所述压敏胶黏剂层的相对于所述黏合剂层的胶接力为15N/25mm以上。
5.根据权利要求4所述的切割晶粒接合一体型膜,其中,
在对所述压敏胶黏剂层照射照度70mW/cm2及照射量150mJ/cm2的紫外线后,在温度23℃下以剥离角度30°及剥离速度600mm/分钟的条件测定的、照射紫外线后的所述压敏胶黏剂层的相对于所述黏合剂层的胶接力为1N/25mm以下。
6.根据权利要求4或5所述的切割晶粒接合一体型膜,其中,
所述切割膜在-15℃下的储能模量为100MPa以上。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021092941 | 2021-06-02 | ||
JP2021-092941 | 2021-06-02 | ||
PCT/JP2022/022012 WO2022255322A1 (ja) | 2021-06-02 | 2022-05-30 | 半導体装置の製造方法及びダイシング・ダイボンディング一体型フィルム |
Publications (1)
Publication Number | Publication Date |
---|---|
CN117157733A true CN117157733A (zh) | 2023-12-01 |
Family
ID=84323272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202280027031.9A Pending CN117157733A (zh) | 2021-06-02 | 2022-05-30 | 半导体装置的制造方法及切割晶粒接合一体型膜 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPWO2022255322A1 (zh) |
KR (1) | KR20240016939A (zh) |
CN (1) | CN117157733A (zh) |
TW (1) | TW202303719A (zh) |
WO (1) | WO2022255322A1 (zh) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
JP4358502B2 (ja) | 2002-03-12 | 2009-11-04 | 浜松ホトニクス株式会社 | 半導体基板の切断方法 |
JP5294366B1 (ja) * | 2012-10-18 | 2013-09-18 | 古河電気工業株式会社 | ダイシングテープ |
JP6926473B2 (ja) * | 2016-12-28 | 2021-08-25 | 昭和電工マテリアルズ株式会社 | ダイシング用粘着シート及びその製造方法、ダイシングダイボンディング一体型シート、並びに、半導体装置の製造方法 |
JP7059553B2 (ja) * | 2017-10-04 | 2022-04-26 | 昭和電工マテリアルズ株式会社 | ステルスダイシング用粘着テープ及びダイシングダイボンディング一体型テープ、並びに半導体装置の製造方法 |
CN113228237A (zh) * | 2018-12-28 | 2021-08-06 | 昭和电工材料株式会社 | 光固化性压敏胶黏剂的评价方法、切割晶粒接合一体型膜及其制造方法以及半导体装置的制造方法 |
SG11202106337WA (en) * | 2018-12-28 | 2021-07-29 | Showa Denko Materials Co Ltd | Evaluation method for light-curing adhesive, integrated dicing and die-bonding film and manufacturing method for same, and manufacturing method for semiconductor device |
JP7434754B2 (ja) * | 2019-08-26 | 2024-02-21 | 三菱ケミカル株式会社 | 活性エネルギー線硬化性剥離型粘着剤組成物および剥離型粘着シート |
JP7409029B2 (ja) * | 2019-11-15 | 2024-01-09 | 株式会社レゾナック | 半導体装置の製造方法、並びにダイシング・ダイボンディング一体型フィルム及びその製造方法 |
-
2022
- 2022-05-30 KR KR1020237030719A patent/KR20240016939A/ko unknown
- 2022-05-30 WO PCT/JP2022/022012 patent/WO2022255322A1/ja active Application Filing
- 2022-05-30 CN CN202280027031.9A patent/CN117157733A/zh active Pending
- 2022-05-30 JP JP2023525829A patent/JPWO2022255322A1/ja active Pending
- 2022-06-01 TW TW111120398A patent/TW202303719A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JPWO2022255322A1 (zh) | 2022-12-08 |
KR20240016939A (ko) | 2024-02-06 |
WO2022255322A1 (ja) | 2022-12-08 |
TW202303719A (zh) | 2023-01-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7409029B2 (ja) | 半導体装置の製造方法、並びにダイシング・ダイボンディング一体型フィルム及びその製造方法 | |
JP2019067996A (ja) | ダイシング用粘着テープ及びダイシングダイボンディング一体型テープ | |
TW202035605A (zh) | 接著膜、附有切晶帶之接著膜、及半導體裝置製造方法 | |
TWI778263B (zh) | 切晶黏晶一體型膜及其製造方法以及半導體裝置的製造方法 | |
KR102681734B1 (ko) | 다이싱·다이본딩 일체형 필름 및 이것에 이용하는 점착 필름 | |
TW202123326A (zh) | 切晶黏晶一體型膜及其製造方法和半導體裝置的製造方法 | |
CN117157733A (zh) | 半导体装置的制造方法及切割晶粒接合一体型膜 | |
WO2022255321A1 (ja) | ダイシング・ダイボンディング一体型フィルム及び半導体装置の製造方法 | |
CN113348533B (zh) | 拾取性的评价方法、切晶粘晶一体型膜及其评价方法及分选方法、半导体装置的制造方法 | |
CN113366621B (zh) | 拾取性的评价方法、切晶粘晶一体型膜、切晶粘晶一体型膜的评价方法及分选方法、以及半导体装置的制造方法 | |
JP7409030B2 (ja) | ダイシング・ダイボンディング一体型フィルム及びその製造方法、並びに半導体装置の製造方法 | |
CN118053799A (zh) | 半导体装置的制造方法 | |
JP7176919B2 (ja) | ダイシングダイボンドフィルム | |
JP2024103822A (ja) | ダイシング・ダイボンディング一体型フィルム及び半導体装置の製造方法 | |
TW202340410A (zh) | 切割晶粒接合膜及製造半導體裝置之方法 | |
JP2023137425A (ja) | ダイシング・ダイボンディング一体型フィルム及び半導体装置の製造方法 | |
JP2023101285A (ja) | ダイシング・ダイボンディング一体型フィルム及びその製造方法、並びに半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |