TW202220087A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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TW202220087A
TW202220087A TW110137272A TW110137272A TW202220087A TW 202220087 A TW202220087 A TW 202220087A TW 110137272 A TW110137272 A TW 110137272A TW 110137272 A TW110137272 A TW 110137272A TW 202220087 A TW202220087 A TW 202220087A
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substrate
processing
processing liquid
supply pipe
liquid
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TW110137272A
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TWI803011B (en
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高橋朋宏
武知圭
佐佐木光敏
秋山剛志
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日商斯庫林集團股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
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Abstract

A subject of the present invention is to reduce the size of the bubbles V in the substrate processing system 1 in which the substrate W is immersed in the processing liquid stored in the processing tank 821, and to improve the processing quality of the substrate. The present invention relates to a substrate processing apparatus, comprising: a processing liquid ejection section 830, which forms a liquid flow L of the processing liquid, and the liquid flow L flows upward along the substrate W from below the substrate W held in the substrate holding section 810; and a bubble supply section 840, which is disposed between the processing liquid ejection section 830 and the substrate holding section 810 to supply bubbles V into the processing liquid stored in the processing tank 82 The bubble supply section 840 has the gas supply pipe 842 which supplies the gas to the inside; and a bubble ejection port 845, which is provided on the gas supply pipe 842 and ejects the bubbles V in the alignment direction of the substrate.

Description

基板處理裝置Substrate processing equipment

本發明係關於一種基板處理裝置，該基板處理裝置係將基板浸漬於處理槽中貯存之藥液或純水等處理液內，並且於處理液內向上述基板供給氣泡而對其進行處理。再者，基板包括半導體晶圓、液晶顯示裝置用玻璃基板、電漿顯示器用玻璃基板、磁碟或光碟用玻璃基板或陶瓷基板、有機EL(electroluminescence，電致發光)裝置用玻璃基板、太陽電池用玻璃基板或矽基板等。The present invention relates to a substrate processing apparatus for immersing a substrate in a processing liquid such as a chemical solution or pure water stored in a processing tank, and supplying air bubbles to the substrate in the processing liquid to process the substrate. Furthermore, the substrates include semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for plasma displays, glass substrates or ceramic substrates for magnetic disks or optical disks, glass substrates for organic EL (electroluminescence) devices, and solar cells. Use glass substrates or silicon substrates, etc.

於半導體裝置製造領域，為了應對半導體裝置之高密度化與大容量化，形成高縱橫比凹部之技術備受期待。例如，於三維NAND(Not And，反及)型非揮發性半導體裝置(以下稱為「3D-NAND記憶體」)之製造過程中，包含如下所述之步驟：對由氧化矽膜(SiO 2膜)與氮化矽膜(SiN膜)複數層積層而形成之積層體，沿積層方向形成凹部後，向凹部供給處理液，藉由濕式蝕刻將SiN膜去除。為了執行該步驟，人們已探討了例如使用專利文獻1中記載之基板處理裝置之方法。 In the field of semiconductor device manufacturing, in order to cope with the increase in density and capacity of semiconductor devices, a technique for forming a recessed portion with a high aspect ratio is expected. For example, in the manufacturing process of a three-dimensional NAND (Not And) type non-volatile semiconductor device (hereinafter referred to as "3D - NAND memory"), the following steps are included: film) and a silicon nitride film (SiN film) are laminated in multiple layers. After forming a concave portion in the lamination direction, a processing liquid is supplied to the concave portion to remove the SiN film by wet etching. In order to carry out this step, for example, a method of using the substrate processing apparatus described in Patent Document 1 has been considered.

專利文獻1中記載之基板處理裝置具備：處理槽，其貯存用以處理基板之處理液；基板保持部，其於處理槽之處理液內保持基板；流體供給部，其向處理槽供給流體；及控制部，其控制流體供給部；且控制部係以於自開始向貯存有浸漬著基板之處理液之處理槽供給流體起，截至結束流體供給為止之期間內，使流體供給部變更流體供給之方式，控制流體供給部。於該基板處理裝置中，作為流體供給部而與基板主面之法線方向平行地供給氣體或液體之第1流體供給管與第2流體供給管於處理槽之底部延伸。而且，人們正致力於：藉由控制部，切換自第1流體供給管與第2流體供給管供給氣體或液體之期間，以抑制於處理槽內處理基板時發生之偏差。The substrate processing apparatus described in Patent Document 1 includes: a processing tank that stores a processing liquid for processing the substrate; a substrate holding section that holds the substrate in the processing liquid of the processing tank; and a fluid supply section that supplies a fluid to the processing tank; and a control unit that controls the fluid supply unit; and the control unit changes the fluid supply to the fluid supply unit during the period from the start of supplying the fluid to the processing tank in which the processing liquid immersed in the substrate is stored until the end of the fluid supply In this way, the fluid supply portion is controlled. In this substrate processing apparatus, a first fluid supply pipe and a second fluid supply pipe for supplying gas or liquid as the fluid supply portion in parallel with the normal direction of the main surface of the substrate extend from the bottom of the processing tank. Furthermore, efforts have been made to suppress variations in processing substrates in the processing tank by switching the period during which the gas or liquid is supplied from the first fluid supply pipe and the second fluid supply pipe by the controller.

此處，自流體供給管供給氣體之情形時，被供給之氣體會以氣泡形式於處理液內上浮。可想而知，處理液上升流之速度會借助氣泡之浮力而變快，且氣泡於通過基板之正面時，會與基板之正面接觸，從而能攪動基板正面所存在之矽濃度較高之處理液層(高濃度層)。藉此，促進基板正面之處理液於氣泡通過後置換成新鮮之處理液。結果可以想見，利用處理液進行濕式蝕刻而形成之圖案上部附近之矽濃度變低，能迅速、均勻、直至圖案之又窄又深之溝槽深處地，進行基板處理。此處認為，通過基板正面之氣泡之直徑(氣泡徑)越小，氣泡對處理液之攪動程度越大。 [先前技術文獻] [專利文獻] Here, when the gas is supplied from the fluid supply pipe, the supplied gas floats in the processing liquid in the form of bubbles. It is conceivable that the speed of the upward flow of the processing liquid will be accelerated by the buoyancy of the bubbles, and when the bubbles pass through the front surface of the substrate, they will contact the front surface of the substrate, thereby agitating the high concentration of silicon existing on the front surface of the substrate. Liquid layer (high concentration layer). Thereby, the processing liquid on the front surface of the substrate is promoted to be replaced with a fresh processing liquid after the passage of air bubbles. As a result, it is conceivable that the silicon concentration near the upper part of the pattern formed by wet etching with the processing liquid is reduced, and the substrate can be processed rapidly and uniformly to the depth of the narrow and deep groove of the pattern. Here, it is considered that the smaller the diameter (bubble diameter) of the air bubbles passing through the front surface of the substrate, the greater the degree of agitation of the processing liquid by the air bubbles. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特開2020-47885號公報[Patent Document 1] Japanese Patent Laid-Open No. 2020-47885

[發明所欲解決之問題][Problems to be Solved by Invention]

於專利文獻1中，流體供給管之管徑例如約為8.0 mm，噴出口之直徑約為0.3 mm，自噴出口噴出之氣泡徑處於約2.0 mm～約3.5 mm之範圍內。但仍希望進一步縮小氣泡徑。氣泡自噴出口產生後會立即與噴出口之周圍密接，隨著噴出時間之經過，密接區域以噴出口為中心呈放射狀擴散。之後，氣泡自密接區域脫離，向處理液內供給。由於對噴出口之縮小加工存在極限，故而此前很難進一步縮小氣泡徑。In Patent Document 1, the diameter of the fluid supply pipe is, for example, about 8.0 mm, the diameter of the ejection port is about 0.3 mm, and the diameter of the bubbles ejected from the ejection port is in the range of about 2.0 mm to about 3.5 mm. However, it is still desired to further reduce the bubble diameter. After the bubbles are generated from the ejection port, they will be in close contact with the surrounding area of the ejection port. As the ejection time elapses, the close contact area will spread radially with the ejection port as the center. After that, the air bubbles are detached from the close contact region and are supplied into the processing liquid. Since there is a limit to the reduction of the discharge port, it has been difficult to further reduce the bubble diameter.

本發明即鑒於上述問題研究所得，其目的在於：於將基板浸漬於處理槽中貯存之處理液內，並向基板之正面供給氣泡而對其進行處理之基板處理裝置中，縮小向基板正面供給之氣泡之氣泡徑，提高基板之處理品質。 [解決問題之技術手段] The present invention has been made in view of the above-mentioned problems, and its object is to reduce the supply of air bubbles to the front surface of the substrate in a substrate processing apparatus that immerses the substrate in a processing liquid stored in a processing tank and supplies air bubbles to the front surface of the substrate. The bubble diameter of the bubbles can improve the processing quality of the substrate. [Technical means to solve problems]

本發明之第1態樣係一種基板處理裝置，其特徵在於包含：處理槽，其貯存將基板浸漬而加以處理之處理液；基板保持部，其於上述處理槽內，使上述基板於水平方向上相互隔開地排列，將上述基板呈立起姿勢加以保持；處理液噴出部，其形成上述處理液之液流，該液流自保持於上述基板保持部之上述基板之下方沿著上述基板流向上方；及氣泡供給部，其配置於上述處理液噴出部與上述基板保持部之間，向上述處理槽中貯存之上述處理液內供給氣泡；且上述氣泡供給部具有：氣體供給管，其向內部供給氣體；及氣泡噴出口，其設置於上述氣體供給管，向上述基板之排列方向噴出氣泡。A first aspect of the present invention is a substrate processing apparatus characterized by comprising: a processing tank for storing a processing liquid for immersing and processing a substrate; and a substrate holding section for holding the substrate in a horizontal direction in the processing tank The substrates are arranged at a distance from each other, and the substrates are held in an upright posture; a processing liquid ejection part forms a liquid flow of the processing liquid, and the liquid flows along the substrates from below the substrates held in the substrate holding parts. a flow direction upward; and a bubble supply part, which is arranged between the processing liquid ejection part and the substrate holding part and supplies bubbles into the processing liquid stored in the processing tank; and the bubble supply part has a gas supply pipe which A gas is supplied to the inside; and a bubble ejection port is provided in the gas supply pipe, and ejects bubbles in the arrangement direction of the substrate.

根據本發明之第1態樣，氣泡供給部之氣泡噴出口設置於處理液噴出部與保持於基板保持部之基板之正面之間，向基板之排列方向噴出氣泡，因此能利用處理液之液流使氣泡自氣泡噴出口脫離。藉此，較不利用處理液之液流使氣泡自氣體供給管之氣泡噴出口脫離之情形，能向基板之正面供給氣泡徑更小之氣泡。又，藉由利用處理液之上升向基板之正面供給氣泡，進而能提高氣泡之上升速度，從而能將基板正面之處理液迅速、持續地置換成新鮮之處理液。According to the first aspect of the present invention, the air bubble ejection port of the air bubble supply unit is provided between the processing liquid ejection portion and the front surface of the substrate held by the substrate holding portion, and the air bubbles are ejected in the alignment direction of the substrates, so that the processing liquid can be used. The flow disengages the air bubbles from the air bubble ejection openings. Thereby, it is possible to supply air bubbles having a smaller diameter to the front surface of the substrate than in the case where the air bubbles are not detached from the air bubble ejection port of the gas supply pipe by the liquid flow of the processing liquid. In addition, by supplying air bubbles to the front surface of the substrate by utilizing the rising of the processing liquid, the rising speed of the air bubbles can be increased, so that the processing liquid on the front surface of the substrate can be rapidly and continuously replaced with fresh processing liquid.

本發明之第2態樣係如本發明之第1態樣之基板處理裝置，其特徵在於：上述氣體供給管自上方觀察係沿著上述基板之主面而延設，且於側壁具有複數個氣泡噴出口，上述氣泡噴出口所處之位置能向保持於上述基板保持部且相互鄰接之上述基板之間隙供給氣泡。A second aspect of the present invention is the substrate processing apparatus according to the first aspect of the present invention, characterized in that the gas supply pipe extends along the main surface of the substrate when viewed from above, and has a plurality of gas supply pipes on the side walls. The air bubble ejection port is located at a position where air bubbles can be supplied to a gap between the substrates held in the substrate holding portion and adjacent to each other.

根據本發明之第2態樣，氣泡噴出口位於基板之間隙之下方，因此能利用處理液之液流向基板之正面供給小氣泡徑之氣泡。According to the second aspect of the present invention, since the air bubble ejection port is located below the gap between the substrates, it is possible to supply air bubbles with small bubble diameters to the front surface of the substrate by utilizing the flow of the processing liquid.

本發明之第3態樣係如本發明之第2態樣之基板處理裝置，其特徵在於：上述處理液噴出部具有複數根向內部供給處理液之處理液供給管，且於上述處理液供給管之側壁具有複數個處理液噴出口，上述處理液噴出口位於相互鄰接之上述基板之間隙之下方。A third aspect of the present invention is the substrate processing apparatus according to the second aspect of the present invention, wherein the processing liquid ejection portion includes a plurality of processing liquid supply pipes for supplying the processing liquid to the inside, and the processing liquid is supplied to the processing liquid. The side wall of the tube has a plurality of treatment liquid ejection ports, and the treatment liquid ejection ports are located below the gaps between the adjacent substrates.

根據本發明之第3態樣，處理液噴出口位於基板之間隙之下方，因此能向所排列之複數片基板與基板之間隙供給小氣泡徑之氣泡。According to the third aspect of the present invention, since the processing liquid ejection port is located below the gap between the substrates, it is possible to supply air bubbles having a small bubble diameter to the gap between the plurality of substrates that are arranged.

本發明之第4態樣係如本發明之第2態樣或第3態樣之基板處理裝置，其特徵在於：上述氣泡供給部具有複數根上述氣體供給管，上述氣體供給管於水平方向上與其他氣體供給管鄰接，上述氣泡噴出口於大致水平方向上開設於上述基板之間隙之下方。A fourth aspect of the present invention is the substrate processing apparatus according to the second aspect or the third aspect of the present invention, wherein the bubble supply unit has a plurality of the gas supply pipes, and the gas supply pipes are in a horizontal direction. Adjacent to other gas supply pipes, the air bubble ejection port is opened below the gap between the substrates in a substantially horizontal direction.

根據本發明之第4態樣，能向所排列之複數片基板之正面供給氣泡徑更小之氣泡。According to the fourth aspect of the present invention, it is possible to supply air bubbles with smaller diameters to the front surfaces of the plurality of substrates arranged.

本發明之第5態樣係如本發明之第4態樣之基板處理裝置，其特徵在於：上述氣泡噴出口位於自上述氣體供給管突設之空心狀之突設部位之前端。A fifth aspect of the present invention is the substrate processing apparatus according to the fourth aspect of the present invention, wherein the bubble ejection port is located at the front end of the hollow protruding portion protruding from the gas supply pipe.

根據本發明之第5態樣，能向所排列之複數片基板之正面供給氣泡徑更小之氣泡。According to the fifth aspect of the present invention, it is possible to supply air bubbles having a smaller diameter to the front surfaces of the plurality of substrates arranged.

本發明之第6態樣係如本發明之第5態樣之基板處理裝置，其特徵在於：上述突設部位為柱狀形狀或錐狀形狀。A sixth aspect of the present invention is the substrate processing apparatus according to the fifth aspect of the present invention, wherein the protruding portion has a columnar shape or a tapered shape.

根據本發明之第6態樣，能向所排列之複數片基板之正面供給氣泡徑更小之氣泡。According to the sixth aspect of the present invention, it is possible to supply air bubbles with smaller diameters to the front surfaces of the plurality of substrates arranged.

本發明之第7態樣係如本發明之第4態樣至第6態樣之基板處理裝置，其特徵在於：上述氣泡噴出口為圓形形狀或橢圓形形狀。A seventh aspect of the present invention is the substrate processing apparatus according to the fourth aspect to the sixth aspect of the present invention, characterized in that the air bubble ejection port has a circular shape or an elliptical shape.

根據本發明之第7態樣，能向所排列之複數片基板之正面供給氣泡徑更小之氣泡。According to the seventh aspect of the present invention, it is possible to supply air bubbles with smaller diameters to the front surfaces of the plurality of substrates arranged.

本發明之第8態樣係如本發明之第2態樣至第7態樣之基板處理裝置，其特徵在於：上述基板以與鄰接基板正面彼此或背面彼此對向之狀態，保持於上述基板保持部。An eighth aspect of the present invention is the substrate processing apparatus according to the second aspect to the seventh aspect of the present invention, wherein the substrate is held on the substrate in a state in which the front surface or the back surface of the adjacent substrate faces each other. keep the department.

根據本發明之第8態樣，能縮小基板處理裝置之佔據面積(footprint)，且能高效進行基板之處理。According to the eighth aspect of the present invention, the footprint of the substrate processing apparatus can be reduced, and the substrate processing can be performed efficiently.

本發明之第9態樣係如本發明之第8態樣之基板處理裝置，其特徵在於：上述基板呈與鄰接基板背面彼此對向之狀態，且於上述基板之背面與鄰接基板之背面之間具備間隔板。A ninth aspect of the present invention is the substrate processing apparatus according to the eighth aspect of the present invention, wherein the substrate is in a state in which the back surface of the adjacent substrate faces each other, and the back surface of the substrate and the back surface of the adjacent substrate are in a state of facing each other. There are partitions between.

根據本發明之第9態樣，能向基板之正面供給較未設間隔板時更多、氣泡徑更小之氣泡。According to the ninth aspect of the present invention, more bubbles and smaller bubble diameters can be supplied to the front surface of the substrate than when no spacer is provided.

本發明之第10態樣係如本發明之第1態樣至第9態樣之基板處理裝置，其特徵在於：上述氣泡供給部由樹脂材料構成，上述樹脂材料由選自聚醚醚酮(PEEK)、全氟烷氧基烷烴(PFA)及聚四氟乙烯(PTFE)所組成之群中之至少1種材料構成。A tenth aspect of the present invention is the substrate processing apparatus according to the first aspect to the ninth aspect of the present invention, wherein the air bubble supply portion is made of a resin material, and the resin material is selected from the group consisting of polyetheretherketone (polyetheretherketone (PEEK). It is composed of at least one material from the group consisting of PEEK), perfluoroalkoxy alkane (PFA) and polytetrafluoroethylene (PTFE).

根據本發明之第10態樣，能向所排列之複數片基板之正面供給氣泡徑更小之氣泡。According to the tenth aspect of the present invention, it is possible to supply air bubbles having a smaller air bubble diameter to the front surfaces of the plurality of substrates arranged.

本發明之第11態樣係如本發明之第10態樣之基板處理裝置，其特徵在於：上述氣泡噴出口經過親水化處理。An eleventh aspect of the present invention is the substrate processing apparatus according to the tenth aspect of the present invention, characterized in that the air bubble discharge port is subjected to a hydrophilization treatment.

根據本發明之第11態樣，能向所排列之複數片基板之正面供給氣泡徑更小之氣泡。According to the eleventh aspect of the present invention, it is possible to supply air bubbles having a smaller air bubble diameter to the front surfaces of the plurality of substrates arranged.

本發明之第12態樣係如本發明之第1態樣至第11態樣之基板處理裝置，其特徵在於：於上述氣體供給管之下方具備整流板。A twelfth aspect of the present invention is the substrate processing apparatus according to the first to eleventh aspects of the present invention, characterized in that a straightening plate is provided below the gas supply pipe.

根據本發明之第12態樣，能向所排列之複數片基板之正面供給氣泡徑更小之氣泡。 [發明之效果] According to the twelfth aspect of the present invention, it is possible to supply air bubbles having a smaller air bubble diameter to the front surfaces of the plurality of substrates arranged. [Effect of invention]

根據本發明，能向基板之正面供給小氣泡徑之氣泡，因此能將圖案上部附近之矽濃度較高之處理液置換成新的處理液而降低矽濃度。而且，甚至於連基板正面圖案之又窄又深之溝槽深處之處理液，亦能根據矽濃度之濃度梯度被置換成新鮮之處理液。其結果，能迅速、均勻地進行基板處理，從而能提高基板之處理品質。According to the present invention, since bubbles with small bubble diameters can be supplied to the front surface of the substrate, the silicon concentration can be reduced by replacing the processing liquid with a high silicon concentration in the vicinity of the upper part of the pattern with a new processing liquid. Furthermore, even the processing liquid deep in the narrow and deep grooves connected to the front surface pattern of the substrate can be replaced with fresh processing liquid according to the concentration gradient of the silicon concentration. As a result, the substrate processing can be performed quickly and uniformly, and the processing quality of the substrate can be improved.

圖1係表示具備本發明之第1實施方式的基板處理系統之概略構成之俯視圖。基板處理系統1具備收納器載置部2、擋閘驅動機構3、基板移載機器人4、姿勢變換機構5、推進器6、基板搬送機構7、處理單元8及控制部9。為了將以下各圖中之方向統一標示，如圖1所示，設定了XYZ正交座標軸。此處，XY平面表示水平面。又，Z軸表示鉛直軸，更詳細而言，Z方向係鉛直方向。FIG. 1 is a plan view showing a schematic configuration of a substrate processing system provided with a first embodiment of the present invention. The substrate processing system 1 includes a container placement unit 2 , a shutter drive mechanism 3 , a substrate transfer robot 4 , a posture changing mechanism 5 , a pusher 6 , a substrate transfer mechanism 7 , a processing unit 8 , and a control unit 9 . In order to uniformly indicate the directions in the following figures, as shown in Fig. 1, XYZ orthogonal coordinate axes are set. Here, the XY plane represents a horizontal plane. In addition, the Z axis represents a vertical axis, and more specifically, the Z direction is a vertical direction.

收納器載置部2供載置收納有基板W之收納器。本實施方式中，作為收納器之一例，使用晶圓搬送盒F，該晶圓搬送盒F構成為能將水平姿勢之複數片(例如25片)基板W以沿Z方向積層之狀態進行收納。晶圓搬送盒F或以收納有未處理之基板W之狀態載置於收納器載置部2，或以空載狀態載置於收納器載置部2，用以收納已完成處理之基板W。本實施方式中，收納於晶圓搬送盒F之基板W為形成3D-NAND記憶體之半導體晶圓，具有高縱橫比凹部。本實施方式中，基板W係圓板狀之基板。The container mounting part 2 is for mounting the container in which the board|substrate W is accommodated. In the present embodiment, as an example of a container, a wafer transfer cassette F is used which is configured to accommodate a plurality of (eg, 25) substrates W in a horizontal posture in a state of being stacked in the Z direction. The wafer transfer cassette F is placed on the hopper placing portion 2 in a state of accommodating unprocessed substrates W, or is placed on the hopper placing portion 2 in an empty state, for accommodating the processed substrates W . In this embodiment, the substrate W accommodated in the wafer transfer cassette F is a semiconductor wafer on which a 3D-NAND memory is formed, and has a recessed portion with a high aspect ratio. In this embodiment, the substrate W is a disk-shaped substrate.

於相對收納器載置部2於(+Y)方向側鄰接之處理空間內，配置有擋閘驅動機構3、基板移載機器人4、姿勢變換機構5、推進器6、基板搬送機構7及處理單元8。收納器載置部2與處理空間由具備自由開關之擋閘31之間隔壁(圖示省略)劃分開來。擋閘31連接於擋閘驅動機構3。擋閘驅動機構3響應來自控制部9之關閉指令，閉合擋閘31，自空間上將收納器載置部2與處理空間分離。又，擋閘驅動機構3響應來自控制部9之開啟指令，打開擋閘31，使收納器載置部2與處理空間連通。藉此，能自晶圓搬送盒F向處理空間搬入未處理之基板W，及將已完成處理之基板W向晶圓搬送盒F搬出。A shutter drive mechanism 3, a substrate transfer robot 4, a posture changing mechanism 5, a pusher 6, a substrate transfer mechanism 7, and a process are arranged in the processing space adjacent to the stocker mounting portion 2 on the (+Y) direction side. Unit 8. The container mounting part 2 and the processing space are partitioned by the partition wall (illustration abbreviate|omitted) provided with the shutter 31 provided with a free switch. The shutter 31 is connected to the shutter driving mechanism 3 . The shutter drive mechanism 3 closes the shutter 31 in response to the closing command from the control unit 9 , and spatially separates the container mounting portion 2 from the processing space. Moreover, the shutter drive mechanism 3 opens the shutter 31 in response to the opening command from the control part 9, and makes the container mounting part 2 and a process space communicate. As a result, the unprocessed substrates W can be loaded into the processing space from the wafer transfer cassette F, and the processed substrates W can be unloaded to the wafer transfer cassette F. As shown in FIG.

上述基板W之搬入搬出處理由基板移載機器人4執行。基板移載機器人4係以於水平面內自由回旋之方式構成。基板移載機器人4於擋閘31打開之狀態下，於姿勢變換機構5與晶圓搬送盒F之間交接複數片基板W。又，姿勢變換機構5於經由基板移載機器人4自晶圓搬送盒F接過基板W後或向晶圓搬送盒F遞交基板W前，使複數片基板W之姿勢於立起姿勢與水平姿勢之間變換。The loading and unloading process of the substrate W is performed by the substrate transfer robot 4 . The substrate transfer robot 4 is configured so as to rotate freely in a horizontal plane. The substrate transfer robot 4 transfers a plurality of substrates W between the posture changing mechanism 5 and the wafer transfer cassette F in a state where the shutter 31 is opened. In addition, the posture changing mechanism 5 changes the postures of the plurality of substrates W to the standing posture and the horizontal posture after receiving the substrates W from the wafer transfer cassette F via the substrate transfer robot 4 or before delivering the substrates W to the wafer transfer cassette F. change between.

於姿勢變換機構5之基板搬送機構7側(圖1中之+X方向側)配置有推進器6。其於姿勢變換機構5與基板搬送機構7之間交接立起姿勢之複數片基板W，***其他立起姿勢之複數片基板W。鄰接之各對基板W可進行呈正面彼此或背面彼此隔開固定距離而對向之狀態(即面對面狀態或背對背狀態)之組批。又，鄰接之各對基板W亦可進行呈正面與背面對向之狀態(即面對背狀態)之組批。本實施方式中，50片基板W係於X方向上呈面對面狀態而配置。所謂基板W之正面，例如為供形成電路圖案之主面，所謂基板W之背面，係與該正面為相反側之面。再者，電路圖案亦可形成於基板W之背面。A pusher 6 is disposed on the substrate transfer mechanism 7 side (+X direction side in FIG. 1 ) of the posture changing mechanism 5 . It transfers the plurality of substrates W in the erected posture between the posture changing mechanism 5 and the substrate conveying mechanism 7, and inserts the plural substrates W in the other erected postures. The adjacent pairs of substrates W can be batched in a state in which the front surfaces or the back surfaces are separated from each other by a fixed distance and facing each other (ie, a face-to-face state or a back-to-back state). In addition, each adjacent pair of substrates W can also be batched in a state in which the front surface and the back surface face each other (ie, a state of facing back). In the present embodiment, 50 substrates W are arranged in a face-to-face state in the X direction. The front surface of the substrate W is, for example, a main surface for forming a circuit pattern, and the back surface of the substrate W is the surface on the opposite side to the front surface. Furthermore, the circuit pattern can also be formed on the back surface of the substrate W. As shown in FIG.

基板搬送機構7自如圖1所示與推進器6對向之位置(以下稱為「待機位置」)，沿著構成處理單元8之處理部81～85之排列方向(圖1中之Y方向)，於水平方向上移動。基板搬送機構7具備一對懸垂臂71。藉由該一對懸垂臂71之擺動，能切換對複數片基板W之一次性保持與保持解除兩種狀態。更具體而言，向使各臂71之下緣相互遠離之方向繞水平軸擺動而鬆開複數片基板W，向使各臂71之下緣相互接近之方向繞水平軸擺動而夾持複數片基板W加以保持。又，雖然圖1中省略了圖示，但基板搬送機構7具有臂移動部與臂擺動部。其中，臂移動部具有使一對懸垂臂71沿著處理部81～85之排列方向Y水平移動之功能。因此，藉由該水平移動，一對懸垂臂71會定位於與處理部81～85各自對向之位置(以下稱為「處理位置」)及待機位置。The substrate transfer mechanism 7 is from the position facing the pusher 6 as shown in FIG. 1 (hereinafter referred to as the “standby position”), along the arrangement direction of the processing units 81 to 85 constituting the processing unit 8 (the Y direction in FIG. 1 ) , move in the horizontal direction. The substrate transfer mechanism 7 includes a pair of suspension arms 71 . By swinging the pair of suspension arms 71 , two states of holding and releasing the plurality of substrates W at one time can be switched. More specifically, the plurality of substrates W are released by swinging around the horizontal axis in a direction in which the lower edges of the arms 71 are moved away from each other, and the plurality of substrates W are clamped by swinging around the horizontal axis in a direction in which the lower edges of the arms 71 approach each other. The substrate W is held. In addition, although illustration is abbreviate|omitted in FIG. 1, the board|substrate conveyance mechanism 7 has an arm moving part and an arm swinging part. Among them, the arm moving part has a function of horizontally moving the pair of suspension arms 71 along the arrangement direction Y of the processing parts 81 to 85 . Therefore, by this horizontal movement, the pair of suspension arms 71 are positioned at positions (hereinafter referred to as "processing positions") facing the processing units 81 to 85 and at the standby positions.

臂擺動部具有執行上述臂擺動動作之功能，切換夾持基板W加以保持之保持狀態與解除對基板W之夾持之解除狀態。因此，藉由該切換動作、及作為處理部81、82之基板保持部發揮功能之第1升降器810a或作為處理部83、84之基板保持部發揮功能之第2升降器810b之上下移動，能於第1升降器810a與懸垂臂71、或第2升降器810b與懸垂臂71之間交接基板W。又，於與處理部85對向之處理位置，能於處理部85所具備之保持部與懸垂臂71之間交接基板W。進而，於待機位置，能經由推進器6於姿勢變換機構5與懸垂臂71之間交接基板W。The arm swinging portion has a function of performing the above-described arm swinging operation, and switches between a holding state in which the substrate W is held and held and a released state in which the holding of the substrate W is released. Therefore, by this switching operation, the first lifter 810a functioning as the substrate holding portion of the processing units 81 and 82 or the second lifter 810b functioning as the substrate holding portion of the processing units 83 and 84 is moved up and down, The substrate W can be transferred between the first lifter 810 a and the suspension arm 71 , or between the second lifter 810 b and the suspension arm 71 . In addition, at the processing position facing the processing unit 85 , the substrate W can be transferred between the holding portion provided in the processing unit 85 and the suspension arm 71 . Furthermore, at the standby position, the substrate W can be delivered between the posture changing mechanism 5 and the suspension arm 71 via the pusher 6 .

於處理單元8，如上所述設置有5個處理部81～85，各自作為第1藥液處理部81、第1沖洗處理部82、第2藥液處理部83、第2沖洗處理部84及乾燥處理部85發揮功能。其中，第1藥液處理部81及第2藥液處理部83分別將同種或異種之藥液貯存於處理槽821中，將複數片基板W一次性浸漬於該藥液中而對其實施藥液處理。第1沖洗處理部82及第2沖洗處理部84分別將沖洗液(例如純水)貯存於處理槽821中，將複數片基板W一次性浸漬於該沖洗液中而對其正面實施沖洗處理。上述第1藥液處理部81、第1沖洗處理部82、第2藥液處理部83及第2沖洗處理部84相當於本發明之基板處理裝置之第1實施方式，雖然處理液之種類不同，但基本構成相同。再者，關於裝置構成及動作，將於後文參照圖2至圖7加以詳細敍述。The processing unit 8 is provided with five processing units 81 to 85 as described above, each of which is the first chemical processing unit 81 , the first flushing processing unit 82 , the second chemical processing unit 83 , the second flushing processing unit 84 and the The drying process part 85 functions. Among them, the first chemical solution processing part 81 and the second chemical solution processing part 83 store the same or different chemical solutions in the processing tank 821, respectively, and immerse a plurality of substrates W in the chemical solution at one time to perform the chemical treatment on them. liquid treatment. The first rinsing unit 82 and the second rinsing unit 84 store a rinsing liquid (eg, pure water) in the processing tank 821 , and immerse the plurality of substrates W in the rinsing liquid at one time to rinse the front surfaces thereof. The above-mentioned first chemical treatment unit 81, first rinse treatment unit 82, second chemical treatment unit 83, and second rinse treatment unit 84 correspond to the first embodiment of the substrate processing apparatus of the present invention, although the types of treatment liquids are different , but the basic composition is the same. Furthermore, the configuration and operation of the device will be described in detail later with reference to FIGS. 2 to 7 .

如圖1所示，第1藥液處理部81和與其鄰接之第1沖洗處理部82為一對，第2藥液處理部83和與其鄰接之第2沖洗處理部84為一對。而且，第1升降器810a於第1藥液處理部81及第1沖洗處理部82中，不僅作為本發明之「基板保持部」發揮功能，亦作為用以將已由第1藥液處理部81進行過藥液處理之基板W挪至第1沖洗處理部82之專用搬送機構發揮功能。又，第2升降器810b於第2藥液處理部83及第2沖洗處理部84中，不僅作為本發明之「基板保持部」發揮功能，亦作為用以將已由第2藥液處理部83進行過藥液處理之基板W挪至第2沖洗處理部84之專用搬送機構發揮功能。As shown in FIG. 1 , the first chemical treatment part 81 and the adjacent first rinse treatment part 82 are a pair, and the second chemical treatment part 83 and the adjacent second rinse treatment part 84 are a pair. In addition, the first lifter 810a not only functions as the "substrate holding part" of the present invention in the first chemical processing part 81 and the first rinsing processing part 82, but also functions as a function for transferring the material that has been processed by the first chemical processing part. 81 The substrate W subjected to the chemical liquid treatment is moved to the dedicated conveying mechanism of the first rinsing treatment section 82 to function. In addition, the second lifter 810b not only functions as the "substrate holding part" of the present invention in the second chemical treatment part 83 and the second rinse treatment part 84, but also functions as a function for transferring the material that has been processed by the second chemical treatment part. 83 The substrate W that has been treated with the chemical solution is moved to the dedicated conveying mechanism of the second rinsing unit 84 to function.

於如此構成之處理單元8中，第1升降器810a之3根支持構件812自基板搬送機構7之一對懸垂臂71一次性接過複數片基板W，如後文詳情所述，一面執行使處理液自處理槽821溢出之溢出步驟、及向處理槽821中貯存之處理液內供給氣泡V之氣泡供給步驟，一面使之下降至第1藥液處理部81之處理槽中而浸漬於藥液內(浸漬步驟)。進而，待機特定之藥液處理時間後，第1升降器810a將保持複數片基板W之支持構件812自藥液中提起，使之向第1沖洗處理部82橫行，繼而使支持構件812保持著已完成藥液處理之基板W向第1沖洗處理部82之處理槽821內下降而浸漬於沖洗液中。待機特定之沖洗處理時間後，第1升降器810a使支持構件812保持著已完成沖洗處理之基板W而上升，將基板W自沖洗液中提起。之後，複數片基板W被一次性自第1升降器810a之支持構件遞交至基板搬送機構7之一對懸垂臂71。In the processing unit 8 thus constituted, the three support members 812 of the first lifter 810a receive a plurality of substrates W at one time from one pair of the suspension arms 71 of the substrate transfer mechanism 7, and as described in detail later, perform the operation. The overflow step in which the treatment liquid overflows from the treatment tank 821, and the bubble supply step in which the air bubbles V are supplied into the treatment liquid stored in the treatment tank 821 are lowered into the treatment tank of the first chemical liquid treatment section 81 and immersed in the chemical. In liquid (dipping step). Furthermore, after waiting for a predetermined chemical solution treatment time, the first lifter 810a lifts the support members 812 holding the plurality of substrates W from the chemical solution, and makes them run laterally toward the first rinse treatment section 82, and then holds the support members 812. The substrate W on which the chemical liquid treatment has been completed descends into the treatment tank 821 of the first rinse treatment section 82 and is immersed in the rinse liquid. After waiting for a specific rinse treatment time, the first lifter 810a raises the support member 812 holding the substrate W for which the rinse treatment has been completed, and lifts the substrate W from the rinse liquid. After that, the plurality of substrates W are handed over from the support member of the first lifter 810 a to one pair of suspension arms 71 of the substrate transfer mechanism 7 at one time.

第2升降器810b亦同樣地，自基板搬送機構7之一對懸垂臂71一次性接過複數片基板W，使該複數片基板W下降至第2藥液處理部83之處理槽821中而浸漬於藥液內。進而，待機特定之藥液處理時間後，第2升降器810b使支持構件812上升，將已完成藥液處理之複數片基板W自藥液中提起，使支持構件812向第2沖洗處理部84之處理槽橫行，繼而使該支持構件812向第2沖洗處理部84之處理槽821內下降而浸漬於沖洗液中。待機特定之沖洗處理時間後，第2升降器810b使支持構件812上升，將基板W自沖洗液中提起。之後，複數片基板W被一次性自第2升降器810b之支持構件遞交至基板搬送機構7之一對懸垂臂71。再者，亦可構成為，於第1藥液處理部81、第1沖洗處理部82、第2藥液處理部83及第2沖洗處理部84分別設置作為本發明之「基板保持部」發揮功能之升降器，利用基板搬送機構7或專用之搬送機構對處理部81～84進行基板W之搬入搬出。Similarly, the second lifter 810b receives a plurality of substrates W from one pair of suspension arms 71 of the substrate transport mechanism 7 at a time, and lowers the plurality of substrates W into the processing tank 821 of the second chemical solution processing unit 83 to immersed in the liquid medicine. Further, after waiting for a specific chemical treatment time, the second lifter 810 b raises the support member 812 , and lifts the plurality of substrates W on which the chemical treatment has been completed from the chemical liquid, so that the support member 812 is directed to the second rinsing section 84 . The processing tank runs horizontally, and then the support member 812 is lowered into the processing tank 821 of the second rinse treatment section 84 and immersed in the rinse liquid. After waiting for a specific rinse treatment time, the second lifter 810b raises the support member 812 and lifts the substrate W from the rinse liquid. After that, the plurality of substrates W are handed over from the support member of the second lifter 810 b to one pair of suspension arms 71 of the substrate transfer mechanism 7 at one time. Furthermore, it may be configured such that the first chemical treatment part 81, the first rinse treatment part 82, the second chemical treatment part 83, and the second rinse treatment part 84 are respectively provided to function as "substrate holding parts" of the present invention. The functional lifter uses the substrate transfer mechanism 7 or a dedicated transfer mechanism to carry in and unload the substrates W to and from the processing sections 81 to 84 .

乾燥處理部85具有能將複數片(例如50片)基板W以呈立起姿勢排列之狀態進行保持之基板保持構件(圖示省略)，藉由在減壓氣體環境下向基板W供給有機溶劑(異丙醇等)，或利用離心力將基板W正面之液體成分甩掉，而使基板W乾燥。該乾燥處理部85具有較處理部84等之處理槽821深之處理槽824，且處理槽824之上部附有可向(-X)方向滑動之蓋子，從而能形成密閉狀態(未圖示)。處理槽824之下側具有水層，從而能於其上側利用有機溶劑之蒸汽進行乾燥。乾燥處理部85之升降器位於較可向(-X)方向滑動之蓋子更靠下側之位置，而構成為能與基板搬送機構7之一對懸垂臂71之間交接基板W。而且，會自基板搬送機構7一次性接過沖洗處理後之複數片基板W，而對該複數片基板W實施乾燥處理。又，乾燥處理後，會自基板保持構件向基板搬送機構7一次性遞交複數片基板W。The drying processing unit 85 has a substrate holding member (not shown) capable of holding a plurality of (eg, 50) substrates W in a state of being arranged in an upright posture, and by supplying an organic solvent to the substrates W in a decompressed gas environment (isopropyl alcohol, etc.), or the liquid component on the front surface of the substrate W is shaken off by centrifugal force, and the substrate W is dried. The drying processing unit 85 has a processing tank 824 which is deeper than the processing tank 821 of the processing section 84 and the like, and a cover slidable in the (-X) direction is attached to the upper part of the processing tank 824 so as to form a closed state (not shown). . The lower side of the treatment tank 824 has a water layer, and the upper side thereof can be dried with the steam of the organic solvent. The lifter of the drying process section 85 is positioned below the cover slidable in the (-X) direction, and is configured to transfer the substrate W to a pair of suspension arms 71 of the substrate transport mechanism 7 . Then, the plurality of substrates W after the rinsing process are received from the substrate conveyance mechanism 7 at one time, and the plurality of substrates W are subjected to a drying process. In addition, after the drying process, a plurality of substrates W are handed over from the substrate holding member to the substrate conveyance mechanism 7 at one time.

其次，對本發明之基板處理裝置進行說明。於圖1所示之基板處理系統1所具備之第1藥液處理部81、第1沖洗處理部82、第2藥液處理部83及第2沖洗處理部84中，雖然所使用之處理液係藥液與沖洗液，有一部分不同，但裝置構成及動作基本相同。因此，以下對相當於本發明之基板處理裝置之第1實施方式的第1藥液處理部81之構成及動作進行說明，而有關第1沖洗處理部82、第2藥液處理部83及第2沖洗處理部84之說明則予以省略。Next, the substrate processing apparatus of the present invention will be described. In the substrate processing system 1 shown in FIG. 1, the first chemical treatment part 81, the first rinse treatment part 82, the second chemical treatment part 83, and the second rinse treatment part 84, although the treatment liquid used There are some differences between the chemical liquid and the flushing liquid, but the structure and operation of the device are basically the same. Therefore, the configuration and operation of the first chemical solution processing unit 81 corresponding to the first embodiment of the substrate processing apparatus of the present invention will be described below. 2. The description of the rinse processing unit 84 is omitted.

圖2係表示本發明之基板處理裝置之第1實施方式的概略構成之模式圖。圖3係模式性表示圖2所示之基板處理裝置之主要構成之分解組裝立體圖。圖4係圖2之局部剖視圖。圖5係表示保持於升降器之複數片基板W、氣泡噴出口845、處理液噴出口834之配置關係之模式圖。圖6係圖2所示之基板處理裝置之主要構成之俯視圖。圖7係表示自(-X)方向觀察圖5所示之氣體供給管842所見之一部分之局部放大圖。FIG. 2 is a schematic view showing a schematic configuration of the first embodiment of the substrate processing apparatus of the present invention. FIG. 3 is an exploded and assembled perspective view schematically showing the main components of the substrate processing apparatus shown in FIG. 2 . FIG. 4 is a partial cross-sectional view of FIG. 2 . FIG. 5 is a schematic diagram showing the arrangement relationship of a plurality of substrates W held by the lifter, the bubble jetting port 845 , and the processing liquid jetting port 834 . FIG. 6 is a plan view of the main structure of the substrate processing apparatus shown in FIG. 2 . Fig. 7 is a partially enlarged view showing a part of the gas supply pipe 842 shown in Fig. 5 viewed from the (-X) direction.

第1藥液處理部81係使用例如含有磷酸之藥液作為處理液，將形成於基板W正面之氮化矽膜蝕刻去除之裝置。如圖2及圖3所示，該第1藥液處理部81具備用以對基板W進行第1藥液處理之處理槽821。該處理槽821具有上方開口之箱形結構，該結構由俯視下呈長方形之底壁821a、及自底壁821a之周圍豎立起來之4個側壁821b～821e構成。因此，處理槽821能於由底壁821a與側壁821b～821e圈圍而成之貯存空間821f內貯存著處理液，而一次性浸漬保持於第1升降器810a之複數片基板W。又，處理槽821具有向(+Z)方向開口之上方開口821g，能使處理液自該貯存空間821f溢出。The first chemical solution processing unit 81 is a device for etching and removing the silicon nitride film formed on the front surface of the substrate W using, for example, a chemical solution containing phosphoric acid as a processing solution. As shown in FIGS. 2 and 3 , the first chemical treatment unit 81 includes a treatment tank 821 for subjecting the substrate W to the first chemical treatment. The processing tank 821 has a box-shaped structure with an upper opening, and the structure is composed of a bottom wall 821a having a rectangular shape in plan view, and four side walls 821b to 821e erected from the periphery of the bottom wall 821a. Therefore, the processing tank 821 can store the processing liquid in the storage space 821f surrounded by the bottom wall 821a and the side walls 821b to 821e, and immerse the plurality of substrates W held by the first lifter 810a at one time. In addition, the processing tank 821 has an upper opening 821g opened in the (+Z) direction, and the processing liquid can be overflowed from the storage space 821f.

於處理槽821之周圍設置有溢出槽822，該溢出槽822與處理槽821之側壁821b～821e形成了回收所溢出之處理液之回收空間822a。又，以包圍處理槽821及溢出槽822之下方與側方之方式設置有外部容器823。An overflow tank 822 is provided around the processing tank 821, and the overflow tank 822 and the side walls 821b to 821e of the processing tank 821 form a recovery space 822a for recovering the overflowed processing liquid. Moreover, the outer container 823 is provided so that the lower part and the side of the processing tank 821 and the overflow tank 822 may be surrounded.

於溢出槽822之回收空間822a之一部分，更具體為側壁821d之(-X)方向側之空間內，配置有輸流配管系統839。輸流配管系統839之入口連接於處理液供給部832，出口連接於處理液噴出部830之處理液供給管831。因此，若處理液供給部832響應來自控制部9之處理液供給指令而作動，則處理液經由輸流配管系統839同時向複數根處理液供給管831供給。其結果，處理液自處理液供給管831噴出，並貯存於貯存空間821f。再者，關於處理液供給管831之詳細構成等，將於後文加以詳細敍述。In a part of the recovery space 822a of the overflow tank 822, more specifically the space on the (-X) direction side of the side wall 821d, a flow piping system 839 is arranged. The inlet of the flow piping system 839 is connected to the processing liquid supply part 832 , and the outlet is connected to the processing liquid supply pipe 831 of the processing liquid ejection part 830 . Therefore, when the processing liquid supply unit 832 is activated in response to the processing liquid supply command from the control unit 9 , the processing liquid is simultaneously supplied to the plurality of processing liquid supply pipes 831 through the flow piping system 839 . As a result, the treatment liquid is ejected from the treatment liquid supply pipe 831 and stored in the storage space 821f. In addition, the detailed structure etc. of the process liquid supply pipe 831 will be described in detail later.

又，自處理槽821溢出之處理液會被回收至溢出槽822。於該溢出槽822連接有處理液回收部833。若處理液回收部833響應來自控制部9之處理液回收指令而作動，則溢出槽822中回收到之處理液經由處理液回收部833被輸送至處理液供給部832以供再次利用。如此，本實施方式中，能一面對處理槽821循環供給處理液，一面將處理液貯存於貯存空間821f。In addition, the treatment liquid overflowing from the treatment tank 821 is recovered to the overflow tank 822 . The processing liquid recovery part 833 is connected to the overflow tank 822 . If the processing liquid recovery part 833 is activated in response to the processing liquid recovery command from the control part 9, the processing liquid recovered in the overflow tank 822 is transported to the processing liquid supply part 832 through the processing liquid recovery part 833 for reuse. In this way, in the present embodiment, the processing liquid can be stored in the storage space 821f while the processing liquid is circulated and supplied to the processing tank 821 .

為了一次性保持複數片基板W，並使之浸漬於貯存有處理液之貯存空間821f，如圖2所示，設置有第1升降器810a。該第1升降器810a構成為能於「交接位置」與貯存空間821f之間升降，所謂「交接位置」，係與基板搬送機構7(圖1)之間交接複數片基板W之位置。第1升降器810a具備背板811、3根支持構件812、及延出構件813。背板811沿著處理槽821之側壁821b朝向底壁821a延出。支持構件812自背板811之下端部側面向(-X)方向延出。本實施方式中，設置有3根支持構件812。於各支持構件812之上表面，以固定間距沿X方向配設有複數個V字狀之溝槽812a。溝槽812a係較基板W之厚度寬一些之V字狀之溝槽812a向(+Z)方向開口而形成，能卡止基板W。因此，藉由3根支持構件812，能以固定之基板間距PT(圖5)一次性保持由基板搬送機構7搬送之複數片基板W。又，延出構件813自背板811之上端部背面向(+X)方向延出。第1升降器810a如圖2所示，整體呈L字狀。再者，第1升降器810a之極限上升位置設定於即便基板搬送機構7為保持有複數片基板W之狀態亦能自支持構件812之上方通過之高度，該高度為能與基板搬送機構7之間交接複數片基板W之高度。A first lifter 810a is provided as shown in FIG. 2 in order to hold a plurality of substrates W at once and immerse them in the storage space 821f in which the processing liquid is stored. The first lifter 810a is configured to be able to move up and down between the "delivery position" and the storage space 821f. The "delivery position" is a position where a plurality of substrates W are delivered to and from the substrate transfer mechanism 7 (FIG. 1). The first lifter 810 a includes a back plate 811 , three support members 812 , and an extension member 813 . The back plate 811 extends toward the bottom wall 821 a along the side wall 821 b of the processing tank 821 . The support member 812 extends in the (−X) direction from the side surface of the lower end portion of the back plate 811 . In this embodiment, three support members 812 are provided. On the upper surface of each support member 812, a plurality of V-shaped grooves 812a are arranged along the X direction at a fixed pitch. The groove 812a is a V-shaped groove 812a that is slightly wider than the thickness of the substrate W and is formed to open in the (+Z) direction, and the substrate W can be locked. Therefore, by the three support members 812, a plurality of substrates W conveyed by the substrate conveyance mechanism 7 can be held at once with a constant substrate pitch PT (FIG. 5). Moreover, the extension member 813 is extended in the (+X) direction from the back surface of the upper end part of the back plate 811 . As shown in FIG. 2 , the first lifter 810a has an L-shape as a whole. Furthermore, the limit ascending position of the first lifter 810 a is set to a height that can pass above the support member 812 even if the substrate transfer mechanism 7 is in a state in which a plurality of substrates W are held, and the height is equal to that of the substrate transfer mechanism 7 . The height of a plurality of substrates W is transferred between them.

於處理槽821之(+X)方向側，設置有升降器驅動機構814。升降器驅動機構814具備升降馬達815、滾珠螺桿816、升降底座817、升降支柱818及馬達驅動部819。升降馬達815以使旋轉軸縱置之狀態安裝於基板處理系統1之框架(圖示省略)。滾珠螺桿816連結於升降馬達815之旋轉軸。升降底座817之一側螺合於滾珠螺桿816。升降支柱818之下端部側安裝於升降底座817，上端部側安裝於延出構件813之下表面。若馬達驅動部819響應來自控制部9之上升指令而驅動升降馬達815，則滾珠螺桿816旋轉，升降支柱818帶著升降底座817一併上升。藉此，支持構件812定位於交接位置。又，若馬達驅動部819響應來自控制部9之下降指令而逆向驅動升降馬達815，則滾珠螺桿816倒轉，升降支柱818帶著升降底座817一併下降。藉此，保持於支持構件812之複數片基板W被一次性浸漬於貯存空間821f中貯存之處理液內。A lifter drive mechanism 814 is provided on the (+X) direction side of the processing tank 821 . The lifter drive mechanism 814 includes a lift motor 815 , a ball screw 816 , a lift base 817 , a lift column 818 , and a motor drive unit 819 . The elevating motor 815 is mounted on the frame of the substrate processing system 1 (not shown) in a state where the rotating shaft is vertically arranged. The ball screw 816 is connected to the rotating shaft of the elevating motor 815 . One side of the lift base 817 is screwed to the ball screw 816 . The lower end side of the lifting column 818 is attached to the lifting base 817 , and the upper end side is attached to the lower surface of the extension member 813 . When the motor driving part 819 drives the elevating motor 815 in response to the raising command from the control part 9 , the ball screw 816 rotates, and the elevating column 818 rises together with the elevating base 817 . Thereby, the support member 812 is positioned at the handover position. In addition, when the motor drive unit 819 drives the lift motor 815 in the reverse direction in response to the lowering command from the control unit 9 , the ball screw 816 is reversed, and the lift column 818 is lowered together with the lift base 817 . Thereby, the plurality of substrates W held by the support member 812 are immersed in the processing liquid stored in the storage space 821f at one time.

貯存空間821f內，在保持於支持構件812之複數片基板W之下方側，即(-Z)方向側，配設有處理液噴出部830與氣泡供給部840。處理液噴出部830將自處理液供給部832經由輸流配管系統839而供給之處理液向貯存空間821f噴出，氣泡供給部840向貯存空間821f中貯存之處理液內供給氮氣之氣泡V(圖5)，其等各自按以下所述構成。In the storage space 821f, on the lower side of the plurality of substrates W held by the support member 812, that is, on the (−Z) direction side, a processing liquid ejection portion 830 and a bubble supply portion 840 are disposed. The treatment liquid ejection part 830 ejects the treatment liquid supplied from the treatment liquid supply part 832 through the flow piping system 839 to the storage space 821f, and the bubble supply part 840 supplies nitrogen gas bubbles V into the treatment liquid stored in the storage space 821f (Fig. 5), each of which is constituted as follows.

如圖3至圖6所示，處理液噴出部830具有沿X方向延設之處理液供給管831。本實施方式中，4根處理液供給管831係於Y方向上相互隔開而配置。各處理液供給管831之(-X)方向端部與輸流配管系統839之出口連接，(+X)方向端部密封。又，各處理液供給管831於(+Z)方向之側壁穿設有複數個處理液噴出口834(本實施方式中為50個)。複數個處理液噴出口834係以固定間隔(本實施方式中為基板間距PT)排列於X方向之側壁而穿設。本實施方式中，如圖4所示，各處理液噴出口834係朝向(+Z)方向而設置。因此，被供給至處理液供給管831之處理液形成處理液之液流L，該液流L係於配管內部向(+X)方向流動，再自各處理液噴出口834向上方流動，前往處理槽821之上方開口821g即溢出面。如此，於基板W之下方側形成處理液之向(+Z)方向流動之液流L。再者，為了使發明內容容易理解，將4根處理液供給管831中最靠(-Y)方向側配置者稱為「處理液供給管831a」，將向(+Y)方向側依序配置者分別稱為「處理液供給管831b」、「處理液供給管831c」及「處理液供給管831d」。又，無需對其加以區分之情形時，如上所述簡稱為「處理液供給管831」。As shown in FIGS. 3 to 6 , the processing liquid ejection portion 830 has a processing liquid supply pipe 831 extending in the X direction. In the present embodiment, the four processing liquid supply pipes 831 are arranged to be spaced apart from each other in the Y direction. The (-X) direction end of each processing liquid supply pipe 831 is connected to the outlet of the flow piping system 839, and the (+X) direction end is sealed. In addition, a plurality of processing liquid discharge ports 834 (50 in the present embodiment) are drilled in the side wall of each processing liquid supply pipe 831 in the (+Z) direction. A plurality of processing liquid ejection ports 834 are arranged on the side wall in the X direction at a fixed interval (in this embodiment, the substrate pitch PT) and pass through. In the present embodiment, as shown in FIG. 4 , each processing liquid discharge port 834 is provided facing the (+Z) direction. Therefore, the processing liquid supplied to the processing liquid supply pipe 831 forms a liquid flow L of the processing liquid, and this liquid flow L flows in the (+X) direction inside the pipe, and then flows upward from each processing liquid discharge port 834 to proceed to the processing The upper opening 821g of the groove 821 is the overflow surface. In this way, the liquid flow L flowing in the (+Z) direction of the processing liquid is formed on the lower side of the substrate W. In addition, in order to make the content of the invention easy to understand, the one arranged on the most (-Y) direction side among the four processing liquid supply pipes 831 will be referred to as "processing liquid supply pipe 831a", and will be arranged in order on the (+Y) direction side. These are referred to as "processing liquid supply pipe 831b", "processing liquid supply pipe 831c", and "processing liquid supply pipe 831d", respectively. In addition, when there is no need to distinguish it, it is simply referred to as "processing liquid supply pipe 831" as described above.

處理液供給管831由石英或聚醚醚酮(PEEK)、全氟烷氧基烷烴(PFA)及聚四氟乙烯(PTFE)等具有耐腐蝕性之樹脂材料構成。藉由對處理液供給管831之表面實施切削加工與穿設加工，處理液噴出口834與處理液供給管831形成一體。The processing liquid supply pipe 831 is made of a resin material having corrosion resistance such as quartz, polyetheretherketone (PEEK), perfluoroalkoxyalkane (PFA), and polytetrafluoroethylene (PTFE). The processing liquid discharge port 834 and the processing liquid supply pipe 831 are formed integrally by performing cutting processing and drilling processing on the surface of the processing liquid supply pipe 831 .

如圖3至圖6所示，氣泡供給部840具有沿Y方向延設之起泡器841。本實施方式中，25根起泡器841係於X方向上相互隔開而配置。各起泡器841具有：氣體供給管842，其供氣體於長度方向沿Y方向延設之內部流通；及複數個氣泡噴出口845(本實施方式中為20個)，其等穿設於氣體供給管842之(-X)方向之側壁。各氣體供給管842之一端部與連接於供給氮氣之氣體供給部844(參照圖2)之氣體導入管846連接，另一端部密封。氣體導入管846沿著處理槽821之側壁821c及821e而設置。氣體供給管842交替地於(+Y)方向或(-Y)方向上延設，與沿著側壁821c或821e而設置之氣體導入管846連接。如圖5所示，複數個氣泡噴出口845於X方向上以固定之基板間距PT之2倍即間距2PT，設置於氣體供給管842之側壁。各氣泡噴出口845如圖7所示，具有圓形形狀而設置。 氣體供給管842由與氣體之流通方向正交之剖面為圓形之圓筒構件構成。以氣泡噴出口845之開口中心位於通過該圓形中心之水平線上之方式，於氣體供給管842之側壁形成氣泡噴出口845。氣體供給管842自上方觀察係氣體供給管842之氣體流通方向之長度沿著基板W之主面延伸而設置於基板W之下方。氣體供給管842之氣泡噴出口845分別位於在水平方向上鄰接之基板W與基板W之間。藉此，自氣泡噴出口845噴出之氣泡V對自該氣體供給管842與鄰接之氣體供給管842之間上升之處理液之液流L供給。再者，氣體供給管842之管徑例如約為8.0 mm，氣泡噴出口845之直徑約為0.3 mm。 As shown in FIGS. 3 to 6 , the air bubble supply part 840 has a bubbler 841 extending in the Y direction. In the present embodiment, 25 bubblers 841 are arranged to be spaced apart from each other in the X direction. Each bubbler 841 has a gas supply pipe 842 for allowing the gas to circulate in the interior extending in the Y direction in the longitudinal direction; The side wall of the supply pipe 842 in the (-X) direction. One end of each gas supply pipe 842 is connected to a gas introduction pipe 846 connected to a gas supply part 844 (refer to FIG. 2 ) for supplying nitrogen gas, and the other end is sealed. The gas introduction pipe 846 is provided along the side walls 821c and 821e of the processing tank 821 . The gas supply pipes 842 are alternately extended in the (+Y) direction or the (−Y) direction, and are connected to the gas introduction pipes 846 provided along the side walls 821c or 821e. As shown in FIG. 5 , a plurality of bubble ejection ports 845 are disposed on the side wall of the gas supply pipe 842 in the X direction at a pitch 2PT which is twice the fixed substrate pitch PT. As shown in FIG. 7, each air bubble discharge port 845 has a circular shape and is provided. The gas supply pipe 842 is constituted by a cylindrical member having a circular cross section perpendicular to the gas flow direction. A bubble ejection port 845 is formed on the side wall of the gas supply pipe 842 in such a manner that the opening center of the bubble ejection port 845 is located on a horizontal line passing through the center of the circle. The length of the gas supply pipe 842 in the gas flow direction of the gas supply pipe 842 when viewed from above extends along the main surface of the substrate W, and is provided below the substrate W. As shown in FIG. The bubble ejection ports 845 of the gas supply pipe 842 are respectively located between the substrates W and the substrates W adjacent to each other in the horizontal direction. Thereby, the bubbles V ejected from the bubble ejection port 845 are supplied to the liquid flow L of the processing liquid rising from between the gas supply pipe 842 and the adjacent gas supply pipe 842 . Furthermore, the diameter of the gas supply pipe 842 is, for example, about 8.0 mm, and the diameter of the air bubble ejection port 845 is about 0.3 mm.

氣體供給管842由石英或聚醚醚酮(PEEK)、全氟烷氧基烷烴(PFA)及聚四氟乙烯(PTFE)等具有耐腐蝕性之樹脂材料構成。藉由對氣體供給管842之表面實施切削加工與穿設加工，氣泡噴出口845與氣體供給管842形成一體。The gas supply pipe 842 is made of a resin material having corrosion resistance such as quartz, polyetheretherketone (PEEK), perfluoroalkoxyalkane (PFA), and polytetrafluoroethylene (PTFE). By performing cutting processing and drilling processing on the surface of the gas supply pipe 842 , the air bubble ejection port 845 and the gas supply pipe 842 are formed integrally.

關於氣泡噴出口845之穿設，前文記載為穿設於(-X)方向之側壁，但亦可使之穿設於(+X)方向之側壁。複數個起泡器841之氣泡噴出口845較佳為向固定方向穿設，但例如亦可為鄰接配置之起泡器841之氣泡噴出口845對向設置。又，前文記載為將起泡器841之氣泡噴出口845設置於起泡器841之一個方向上，但例如亦可將氣泡噴出口845設置於起泡器841之(+X)方向與(-X)方向兩個方向上，而自起泡器841之(+X)方向與(-X)方向兩個方向供給氣泡V。又，氣泡噴出口845只要能將氣泡V供給至基板之正面即可，亦可使之穿設於自(+Z)方向或(-Z)方向朝(-X)方向或(+X)方向之水平方向傾斜之大致水平方向之側壁。As for the penetration of the bubble ejection port 845, it was described as being penetrated in the side wall in the (-X) direction, but it may be penetrated in the side wall in the (+X) direction. Preferably, the bubble ejection ports 845 of the plurality of bubblers 841 are penetrated in a fixed direction, but for example, the bubble ejection ports 845 of the adjoining bubblers 841 may be arranged opposite to each other. In addition, although the bubble discharge port 845 of the bubbler 841 is described above as being provided in one direction of the bubbler 841, for example, the bubble discharge port 845 may be provided in the (+X) direction and the (−X) direction of the bubbler 841. The bubbles V are supplied from the bubbler 841 in two directions of the (+X) direction and the (-X) direction. In addition, the air bubble discharge port 845 only needs to be capable of supplying the air bubbles V to the front surface of the substrate, and may be formed in the (+Z) direction or the (-Z) direction toward the (-X) direction or the (+X) direction. The horizontal direction is inclined to the substantially horizontal side wall.

於如此構成之氣泡供給部840中，若氣體供給部844響應來自控制部9之氣泡供給指令而向氣泡供給部840供給氮氣，則流經氣體供給管842之氮氣自設置於氣體供給管842之側壁之氣泡噴出口845朝向處理液之液流L噴出，該液流L自複數根氣體供給管842兩兩之間上升。藉此，氮氣之氣泡V沿自氣體供給管842之側壁朝(+Z)方向之溢出面之方向，向貯存空間821f中貯存之處理液內供給。In the bubble supplying part 840 thus constituted, if the gas supplying part 844 supplies nitrogen gas to the bubble supplying part 840 in response to the bubble supplying command from the control part 9, the nitrogen gas flowing through the gas supplying pipe 842 will flow from the gas supplying pipe 842. The air bubble ejection ports 845 on the side walls are ejected toward the liquid flow L of the processing liquid, and the liquid flow L rises from between the plurality of gas supply pipes 842 . Thereby, the bubbles V of nitrogen gas are supplied into the processing liquid stored in the storage space 821f along the direction from the side wall of the gas supply pipe 842 to the overflow surface in the (+Z) direction.

該等氣泡V藉由自處理液噴出口834流向上方開口821g之處理液之液流L，容易以較小之狀態自氣泡噴出口845脫離，之後自處理液中上升。藉由處理液之液流L而上升之氣泡V促進基板W正面之處理液置換成新鮮之處理液。再者，作為氣體供給部844，例如可為自填充有氮氣之儲氣罐供給氮氣之構成，亦可使用設置基板處理系統1之工廠內所設置之公用設施。These bubbles V are easily detached from the bubble discharge port 845 in a small state by the liquid flow L of the processing liquid flowing from the processing liquid discharge port 834 to the upper opening 821g, and then rise from the processing liquid. The air bubbles V rising by the flow L of the processing liquid promote the replacement of the processing liquid on the front surface of the substrate W with the fresh processing liquid. In addition, as the gas supply part 844, the structure which supplies nitrogen gas from the gas tank filled with nitrogen gas may be sufficient, for example, and the utility installed in the factory which installed the substrate processing system 1 may be used.

已參照圖2至圖6對相當於本發明之基板處理裝置之第1實施方式的第1藥液處理部81之構成進行了說明，第2藥液處理部83除了處理液之種類相同或不同此點以外，具有與第1藥液處理部81相同之構成，亦相當於本發明之基板處理裝置之第1實施方式。又，第1沖洗處理部82及第2沖洗處理部84除了處理液係DIW(deionized water，去離子水)等沖洗液此點以外，具有與第1藥液處理部81相同之構成，亦相當於本發明之基板處理裝置之第1實施方式。The configuration of the first chemical solution processing unit 81 corresponding to the first embodiment of the substrate processing apparatus of the present invention has been described with reference to FIGS. 2 to 6 , and the second chemical solution processing unit 83 is the same or different except that the type of the processing solution is different. Except this point, it has the same structure as the 1st chemical|medical solution processing part 81, and also corresponds to 1st Embodiment of the board|substrate processing apparatus of this invention. In addition, the first rinse treatment part 82 and the second rinse treatment part 84 have the same configuration as the first chemical solution treatment part 81 except that the treatment liquid is a rinse liquid such as DIW (deionized water), and are also equivalent In the first embodiment of the substrate processing apparatus of the present invention.

綜上所述，本發明之第1實施方式中，氣體供給管842係自上方之(+Z)方向朝(-X)方向或(+X)方向之水平方向傾斜而設置有複數個氣泡噴出口845。因此，自各氣泡噴出口845噴出之氮氣能藉由自處理液噴出口834供給之處理液之上升流，以氣泡V自氣泡噴出口845脫離，並使氣泡V之尺寸縮小而將其向處理液內供給。關於其詳細理由，將對比圖8所示之比較例與本實施方式(圖5)而進行說明。To sum up, in the first embodiment of the present invention, the gas supply pipe 842 is inclined from the (+Z) direction above to the (-X) direction or the horizontal direction of the (+X) direction, and a plurality of bubble jets are provided. Exit 845. Therefore, the nitrogen gas ejected from each bubble ejection port 845 can be detached from the bubble ejection port 845 as bubbles V by the upward flow of the treatment liquid supplied from the treatment liquid ejection port 834, and the size of the bubbles V can be reduced to be directed toward the treatment liquid internal supply. The detailed reason for this will be described by comparing the comparative example shown in FIG. 8 with the present embodiment ( FIG. 5 ).

圖8係表示第1實施方式之基板處理裝置之比較例之模式圖。該比較例中，於處理液供給管831之處理液噴出口834之上側，即(+Z)方向，設置有氣體供給管842，且於上側即(+Z)方向具有氣泡噴出口845。自處理液噴出口834向(+Z)方向噴出處理液，自氣泡噴出口845向(+Z)方向噴出氮氣，從而向處理槽821之貯存空間821f供給處理液與氣泡V。該情形時，處理液無法撞擊氣體供給管842，而直接引起氣泡V自氣泡噴出口845脫離。又，處理液不會撞擊氣體供給管842，而直接助力於氣泡V之上升。其結果，氣泡V與氣體供給管842表面之氣泡噴出口845之周圍密接，不會自氣體供給管842之表面脫離，隨著時間經過而以氣泡噴出口845之開口為中心呈球狀變大。一旦變大之氣泡V之浮力超過密接力，達到足以脫離之大小時，便會自氣泡噴出口845及密接區域脫離而向處理液內供給。變大之氣泡V之直徑有時會變得較基板間距PT大，因此無法進入基板W間，從而無法充分促進基板W正面之處理液置換成新鮮之處理液。FIG. 8 is a schematic view showing a comparative example of the substrate processing apparatus according to the first embodiment. In this comparative example, a gas supply pipe 842 is provided on the upper side of the processing liquid ejection port 834 of the processing liquid supply pipe 831, that is, in the (+Z) direction, and has a bubble ejection port 845 on the upper side, that is, in the (+Z) direction. The processing liquid is discharged in the (+Z) direction from the processing liquid discharge port 834 , and nitrogen gas is discharged in the (+Z) direction from the bubble discharge port 845 , thereby supplying the processing liquid and the bubbles V to the storage space 821f of the processing tank 821 . In this case, the processing liquid cannot hit the gas supply pipe 842 , and the bubbles V are directly detached from the bubble ejection port 845 . In addition, the process liquid does not hit the gas supply pipe 842, but directly assists the rise of the bubbles V. As a result, the air bubbles V are in close contact with the periphery of the air bubble ejection port 845 on the surface of the gas supply pipe 842, and do not come off the surface of the gas supply pipe 842, and grow in spherical shape with the opening of the air bubble ejection port 845 as the center over time. . Once the buoyancy of the enlarged air bubbles V exceeds the adhesion force and reaches a size sufficient for detachment, the air bubbles V escape from the air bubble ejection port 845 and the close contact area and are supplied into the processing liquid. The diameter of the enlarged bubbles V may become larger than the substrate pitch PT, so that it cannot enter between the substrates W and cannot sufficiently promote the replacement of the processing liquid on the front surface of the substrate W with the fresh processing liquid.

相對於此，第1實施方式中，自氣泡噴出口845噴出之氣泡V產生後立即藉由上升之處理液直接自氣泡噴出口845飛離。飛離之氣泡V與處理液一併上升，其上升速度除了氣泡V之浮力以外，進而加上了處理液之上升速度，因此較快。其結果，第1實施方式中，氣泡V之尺寸較比較例(圖8)小，進而能向基板與基板之間之基板正面供給氣泡徑較比較例小之氣泡，從而能迅速且充分地促進基板正面之處理液置換成新鮮之處理液。On the other hand, in the first embodiment, immediately after the bubbles V discharged from the bubble discharge port 845 are generated, the processing liquid that rises directly flies away from the bubble discharge port 845 . The flying bubbles V rise together with the processing liquid, and the rising speed of the rising speed of the processing liquid is fast in addition to the buoyancy of the bubbles V and the rising speed of the processing liquid. As a result, in the first embodiment, the size of the air bubbles V is smaller than that of the comparative example ( FIG. 8 ), and the air bubbles having a smaller diameter than that of the comparative example can be supplied to the front surface of the substrate between the substrate and the substrate, and the air bubble V can be rapidly and sufficiently promoted. The treatment liquid on the front side of the substrate is replaced with fresh treatment liquid.

尤其是，第1藥液處理部81會經由高縱橫比凹部對SiN膜進行濕式蝕刻，因此將本發明應用於第1藥液處理部81對3D-NAND記憶體之製造而言很重要。即，若欲提高濕式蝕刻性能，必須於凹部之內部與外部之間良好地進行處理液之置換。又，於凹部之底部附近，會伴隨於蝕刻反應而析出矽，但藉由處理液之置換，能將上述矽自凹部排出。若欲使該液體置換穩定且持續表現，必須加大凹部之內部與外部之濃度差，即濃度梯度。進一步而言，若欲滿足其等，縮小氣泡徑便成為用以有效率地向基板W之正面供給新鮮處理液之重要技術事項。關於此點，根據能縮小氣泡V之尺寸之第1藥液處理部81，藉由該氣泡V能促進新鮮處理液之供給，從而能良好地進行SiN膜之濕式蝕刻。In particular, since the first chemical treatment portion 81 wet-etches the SiN film through the high aspect ratio concave portion, it is important to apply the present invention to the first chemical treatment portion 81 for the manufacture of 3D-NAND memory. That is, in order to improve the wet etching performance, it is necessary to satisfactorily replace the processing liquid between the inside and the outside of the concave portion. In addition, in the vicinity of the bottom of the concave portion, silicon is deposited along with the etching reaction, but the silicon can be discharged from the concave portion by the replacement of the treatment liquid. If the liquid replacement is to be performed stably and continuously, the concentration difference between the inside and the outside of the concave portion, that is, the concentration gradient, must be increased. Furthermore, in order to satisfy these and the like, reducing the bubble diameter is an important technical matter for efficiently supplying the fresh processing liquid to the front surface of the substrate W. FIG. In this regard, according to the first chemical solution processing section 81 capable of reducing the size of the bubbles V, the supply of fresh processing solution can be promoted by the bubbles V, and the wet etching of the SiN film can be performed favorably.

再者，本發明並不限定於上述第1實施方式，只要不脫離其主旨，除了上述實施方式以外，亦可進行各種變更。例如，第1實施方式中，係使用自氣體供給管842設置有空心圓柱狀之氣泡噴出口845之起泡器841供給氣泡V，但起泡器841之構成並不限定於此。In addition, this invention is not limited to the said 1st Embodiment, As long as it does not deviate from the summary, various changes other than the said embodiment are possible. For example, in the first embodiment, the bubbles V are supplied using the bubbler 841 provided with the hollow cylindrical bubble discharge port 845 from the gas supply pipe 842, but the structure of the bubbler 841 is not limited to this.

其次，使用圖9及圖10，對第2實施方式進行說明。再者，對於與第1實施方式相同之構成，將省略說明。於圖9及圖10中，基板W係於X方向上以面對面狀態配置，於氣體供給管842之上方且基板W之背面與鄰接之基板W之背面之間，設置有間隔板851。間隔板851之形狀例如為四角柱狀。藉由設置間隔板851，能抑制迂繞著氣體供給管842而欲自基板W之背面與鄰接之基板W之背面之間上升之處理液之液流之產生，從而能縮小X方向之處理液之液流之影響而向基板W之正面與鄰接之基板W之正面之間供給自氣泡噴出口845噴出之氣泡V。其結果，能將氣泡V集中於面對面狀態之基板之正面，從而置換成新鮮處理液之速度提高，能以更高品質執行基板處理。再者，關於間隔板851，前文係與氣體供給管842分開記載，但亦可與氣體供給管842形成一體。Next, the second embodiment will be described with reference to FIGS. 9 and 10 . In addition, about the same structure as 1st Embodiment, description is abbreviate|omitted. In FIGS. 9 and 10 , the substrates W are arranged in a face-to-face state in the X direction, and a spacer 851 is provided above the gas supply pipe 842 and between the backside of the substrate W and the backside of the adjacent substrate W. The shape of the partition plate 851 is, for example, a quadrangular column shape. By providing the partition plate 851, it is possible to suppress the generation of the liquid flow of the processing liquid that goes around the gas supply pipe 842 and is about to rise from the back surface of the substrate W and the back surface of the adjacent substrate W, so that the processing liquid in the X direction can be reduced. Under the influence of the liquid flow, the air bubbles V ejected from the air bubble ejection port 845 are supplied between the front surface of the substrate W and the front surface of the adjacent substrate W. As a result, the air bubbles V can be concentrated on the front surfaces of the substrates in the face-to-face state, so that the replacement speed with the fresh processing liquid is increased, and the substrate processing can be performed with higher quality. In addition, although the partition plate 851 is described separately from the gas supply pipe 842, it may be integrally formed with the gas supply pipe 842.

其次，使用圖11，對第3實施方式進行說明。再者，對於與第1實施方式及第2實施方式相同之構成，將省略說明。上述第2實施方式中，與第1實施方式同樣地，以基板間距PT之間隔沿X方向排列而穿設有50個處理液噴出口834，但第3實施方式中，如圖11所示，其等係以固定之基板間距PT之2倍即間距2PT設置於處理液供給管831之(+Z)方向之側壁(本實施方式中為25個)。該情形時，即便為與第1實施方式或第2實施方式相同之流量，自1個處理液噴出口834供給之處理液之流量亦會變大，而能使自設置於較氣體供給管842之上方更靠側方之處之氣泡噴出口845，即向(-X)方向穿設之複數個氣泡噴出口845噴出之氣泡V，以更小之狀態自氣體供給管842脫離而上升。Next, the third embodiment will be described using FIG. 11 . In addition, about the same structure as 1st Embodiment and 2nd Embodiment, description is abbreviate|omitted. In the above-described second embodiment, as in the first embodiment, 50 processing liquid ejection ports 834 are drilled and lined up in the X direction at intervals of the substrate pitch PT. However, in the third embodiment, as shown in FIG. 11 , These are provided on the side wall in the (+Z) direction of the processing liquid supply pipe 831 (25 in this embodiment) at a pitch 2PT that is twice the fixed substrate pitch PT. In this case, even if the flow rate is the same as that of the first embodiment or the second embodiment, the flow rate of the treatment liquid supplied from one treatment liquid ejection port 834 is increased, and the flow rate of the treatment liquid supplied from the one treatment liquid ejection port 834 can be increased. The bubble ejection port 845 at the upper side and further to the side, that is, the bubbles V ejected from the plurality of bubble ejection ports 845 penetrated in the (-X) direction, escape from the gas supply pipe 842 in a smaller state and rise.

第1實施方式至第3實施方式中，藉由對由樹脂材料構成之長條樹脂管之表面實施切削加工與穿設加工，氣體供給管842與複數個氣泡噴出口845形成一體。In the first to third embodiments, the gas supply pipe 842 and the plurality of bubble ejection ports 845 are integrally formed by performing cutting processing and punching processing on the surface of the long resin pipe made of resin material.

又，氣泡噴出口845為圓形，但其形狀任意，而並不限定於此。例如，亦可使用如圖12所示前端面具有橢圓形形狀之氣泡噴出口845供給氣泡V。In addition, although the bubble discharge port 845 is circular, its shape is arbitrary, and it is not limited to this. For example, as shown in FIG. 12 , the air bubble V may be supplied by using the air bubble discharge port 845 having an elliptical shape on the front end surface.

又，氣泡噴出口845係穿設，但只要使氣泡噴出口845位於在水平方向上鄰接之基板W之間即可，其形狀任意，而並不限定於此。例如，氣泡噴出口845設置於如圖13所示為柱狀形狀之空心圓柱狀之突設部位843a、或如圖14所示為越靠近前端外形尺寸越小之尖細形狀(錐狀形狀)之空心圓錐台形狀之突設部位843b之前端。In addition, although the bubble discharge port 845 is penetrated, the shape of the bubble discharge port 845 may be arbitrary as long as it is located between the substrates W adjacent in the horizontal direction, and is not limited to this. For example, the air bubble discharge port 845 is provided in a hollow cylindrical protruding portion 843a having a cylindrical shape as shown in FIG. 13 , or a tapered shape (conical shape) whose outer dimensions decrease toward the front end as shown in FIG. 14 . The front end of the protruding portion 843b in the shape of a hollow truncated cone.

氣泡噴出口845a或氣泡噴出口845b分別設置於自氣體供給管842突設之突設部位843a或突設部位843b之前端。因此，能使氣泡供給部840中，於氣泡V即將自氣泡噴出口845a、845b脫離而向處理液供給之前一直與氣泡V密接之密接區域限定於突設部位843a、843b之前端面，從而較於配管之側壁設置有氣泡噴出口845時窄小化。其結果，能縮小氣泡徑，提高處理品質。The air bubble ejection port 845a or the air bubble ejection port 845b is provided at the front end of the protruding portion 843a or the protruding portion 843b protruding from the gas supply pipe 842, respectively. Therefore, in the air bubble supply part 840, the close contact region of the air bubble V which is in close contact with the air bubbles V immediately before the air bubbles V are separated from the air bubble discharge ports 845a and 845b and supplied to the processing liquid can be limited to the front end surfaces of the protruding parts 843a and 843b. When the side wall of the pipe is provided with the air bubble discharge port 845, the narrowing is reduced. As a result, the diameter of the bubbles can be reduced, and the processing quality can be improved.

關於突設部位843a或843b，係藉由對氣體供給管842之表面實施切削加工與穿設加工，而使氣體供給管842與複數個突設部位843a或843b形成一體。此處，當然亦可分別準備氣體供給管842與複數個突設部位843a及843b，對氣體供給管842安裝複數個突設部位843a及843b而使之一體化。As for the protruding portion 843a or 843b, the gas supply pipe 842 and the plurality of protruding portions 843a or 843b are integrally formed by performing cutting and drilling processing on the surface of the gas supply pipe 842. Here, of course, the gas supply pipe 842 and the plurality of protruding parts 843a and 843b may be separately prepared, and the gas supply pipe 842 may be integrated with the plurality of protruding parts 843a and 843b by being attached.

又，氣體供給管842之剖面為圓形，但只要使氣泡噴出口845位於在水平方向上鄰接之基板W之間即可，其形狀任意，而並不限定於此。例如，亦可如圖15～圖17所示，為四邊形等之角柱構件類之氣體供給管842b。例如，於圖15中，氣泡噴出口845c穿設於氣體供給管842b。於圖16中，氣泡噴出口845d穿設於為柱狀形狀之空心圓柱狀之突設部位843d之前端。於圖17中，氣泡噴出口845e穿設於為越靠近前端外形尺寸越小之尖細形狀之空心圓錐台形狀之突設部位843e之前端。如氣泡噴出口845a、845b、845d、845e般，氣泡噴出口845位於空心圓柱狀之前端之情形時，藉由自處理液噴出口834供給之處理液之上升流，得以促進氣泡V自氣泡噴出口脫離。其結果，能進一步縮小氣泡V之尺寸。In addition, although the cross section of the gas supply pipe 842 is circular, the shape of the gas supply pipe 842 may be arbitrary as long as the bubble discharge port 845 is located between the substrates W adjacent in the horizontal direction, and is not limited to this. For example, as shown in FIGS. 15 to 17 , it may be a gas supply pipe 842b such as a square pillar member or the like. For example, in FIG. 15, the air bubble discharge port 845c is penetrated to the gas supply pipe 842b. In FIG. 16, the air bubble discharge port 845d is penetrated to the front end of the hollow cylindrical protrusion part 843d which is a cylindrical shape. In FIG. 17, the bubble discharge port 845e is penetrated to the front end of the hollow truncated cone-shaped protruding part 843e which is a tapered shape whose outer dimension becomes smaller toward the front end. When the bubble ejection port 845 is located at the front end of the hollow cylindrical shape like the bubble ejection ports 845a, 845b, 845d, and 845e, the upward flow of the treatment liquid supplied from the treatment liquid ejection port 834 promotes the ejection of the air bubbles V from the air bubbles. Exit exit. As a result, the size of the bubbles V can be further reduced.

又，如圖18所示，氣體供給管842分別經由流量調節器847連接於氣體供給部844。作為流量調節器847，可設置開關閥或流量調整閥。流量調節器847連接於控制部9，由控制部9對流量調節器847進行開關控制及流量控制，從而控制流經氣體供給管842之氣體之流量。藉此，能逐一調整分別流向複數根氣體供給管842之氣體之流量，從而能調整自氣泡噴出口845噴出之氣泡V之量。藉由如上所述具有流量調節器847，例如，於沿X方向排列之複數片基板間，相對於目標蝕刻量而言存在蝕刻量之差之情形時，能於X方向之各位置調整氣泡V之供給量。其結果，能提高以組批狀態一次性處理之所有基板中各個基板所對應之蝕刻量於基板間之均勻性。又，希望於基板間變更蝕刻量之情形時，能增減向希望變更蝕刻量之基板之正面供給之氣泡V之量，而適當地進行調整。又，藉由逐一調整流經複數根氣體供給管842之氣體之流量，能調整向處理槽821內供給之氣泡V之量，亦能根據處理槽821內之位置，局部調整處理液上升流之速度。Moreover, as shown in FIG. 18, the gas supply pipes 842 are connected to the gas supply part 844 via the flow rate regulator 847, respectively. As the flow regulator 847, an on-off valve or a flow adjustment valve may be provided. The flow regulator 847 is connected to the control unit 9 , and the control unit 9 performs on-off control and flow control of the flow regulator 847 to control the flow rate of the gas flowing through the gas supply pipe 842 . Thereby, the flow rate of the gas flowing to the plurality of gas supply pipes 842 can be adjusted one by one, and the amount of the air bubbles V ejected from the air bubble ejection port 845 can be adjusted. By having the flow rate adjuster 847 as described above, for example, when there is a difference in the etching amount with respect to the target etching amount between a plurality of substrates arranged in the X direction, the bubble V can be adjusted at each position in the X direction. of supply. As a result, the uniformity of the etching amount corresponding to each substrate among all the substrates processed in a batch state can be improved among the substrates. In addition, when it is desired to change the etching amount between substrates, the amount of the air bubbles V supplied to the front surface of the substrate for which the etching amount is desired to be changed can be increased or decreased and adjusted appropriately. In addition, by adjusting the flow rate of the gas flowing through the plurality of gas supply pipes 842 one by one, the amount of the air bubbles V supplied into the processing tank 821 can be adjusted, and the upward flow of the processing liquid can also be locally adjusted according to the position in the processing tank 821. speed.

又，亦可對氣泡噴出口845之內表面實施親水化處理。親水化處理例如為電漿處理。藉由該電漿處理，該前端即氣泡噴出口845之內表面被親水化，而得以促進氣泡V之脫離。其結果，能進一步縮小氣泡V之尺寸。In addition, the inner surface of the bubble discharge port 845 may be subjected to a hydrophilization treatment. The hydrophilization treatment is, for example, plasma treatment. By the plasma treatment, the front end, that is, the inner surface of the bubble ejection port 845 is hydrophilized, so that the detachment of the bubbles V can be promoted. As a result, the size of the bubbles V can be further reduced.

又，亦可如圖19所示，於氣體供給管842之下方設置整流板861。作為整流板861，例如可採用寬度較氣體供給管842之管徑大之整流板。藉由採用此種整流板，能自較鄰接之氣體供給管842之間隔窄之整流板與整流板之間隔，向沿X方向排列之基板W之正面供給自處理液噴出部830噴出之處理液之上升流。該情形時，處理液上升流之速度加快，能促進氣泡V自氣泡噴出口845脫離，並且能將脫離之氣泡V得當地供給至基板W之正面。再者，整流板861可與氣體供給管842同樣地，自上方觀察係沿著基板之主面而延設。而且，處理液供給管831之處理液噴出口834朝向處理槽821之底壁821a或側壁821c而開口，噴出處理液，所噴出之處理液能形成自整流板與整流板之間隔噴出之上升流。In addition, as shown in FIG. 19 , a rectifying plate 861 may be provided below the gas supply pipe 842 . As the rectifying plate 861, for example, a rectifying plate having a larger width than the diameter of the gas supply pipe 842 can be used. By adopting such a rectifying plate, the processing liquid ejected from the processing liquid ejecting portion 830 can be supplied to the front surface of the substrates W aligned in the X direction from the spacing between the rectifying plate and the rectifying plate, which is narrower than the interval between the adjacent gas supply pipes 842 . the upflow. In this case, the speed of the upward flow of the processing liquid is increased, the detachment of the air bubbles V from the air bubble discharge port 845 can be accelerated, and the detached air bubbles V can be supplied to the front surface of the substrate W appropriately. In addition, like the gas supply pipe 842, the rectifying plate 861 can be extended along the main surface of a board|substrate when viewed from above. Furthermore, the treatment liquid ejection port 834 of the treatment liquid supply pipe 831 is opened toward the bottom wall 821a or the side wall 821c of the treatment tank 821, and the treatment liquid is ejected, and the ejected treatment liquid can form an upward flow ejected from the gap between the rectifying plate and the rectifying plate .

又，上述實施方式中，處理液噴出部830包含4根處理液供給管831，但處理液供給管831之根數並不限定於此，而是可根據貯存空間821f或基板W之尺寸等加以設置。又，氣泡供給部840中包含之起泡器841之根數為25根，但起泡器841之根數並不限定於此，而是可根據貯存空間821f或基板W之正面之朝向、基板W之片數等加以設置。In addition, in the above-mentioned embodiment, the processing liquid ejection part 830 includes four processing liquid supply pipes 831, but the number of processing liquid supply pipes 831 is not limited to this, and may be increased according to the size of the storage space 821f or the substrate W, etc. set up. In addition, the number of the bubblers 841 included in the bubble supply part 840 is 25, but the number of the bubblers 841 is not limited to this. Set the number of W slices, etc.

又，上述實施方式中，係將氮氣送入起泡器841中而將氮氣之氣泡V供給至處理液內，但可使用氮氣以外之氣體作為本發明中之「氣體」。In addition, in the above-described embodiment, nitrogen gas is fed into the bubbler 841 to supply nitrogen gas bubbles V into the treatment liquid, but a gas other than nitrogen gas may be used as the "gas" in the present invention.

又，上述實施方式中，係將本發明應用於自處理液供給管831朝向貯存空間821f之上方噴出處理液之基板處理裝置，但本發明之處理液之供給態樣並不限定於此。例如亦可自基板W之下方側朝向處理槽821之底壁821a噴出處理液。In the above-described embodiment, the present invention is applied to a substrate processing apparatus that ejects the processing liquid from the processing liquid supply pipe 831 toward the upper side of the storage space 821f, but the supply aspect of the processing liquid of the present invention is not limited to this. For example, the processing liquid may be ejected from the lower side of the substrate W toward the bottom wall 821a of the processing tank 821 .

進而，上述實施方式中，係將本發明應用於藉由含有磷酸之藥液進行藥液處理之基板處理裝置、或進行沖洗處理之基板處理裝置，但本發明之應用範圍並不限定於此，本發明可應用於使基板浸漬於上述藥液及沖洗液以外之處理液內，並且於處理液內向上述基板供給氣泡V而進行基板處理之基板處理技術全體。 [產業上之可利用性] Furthermore, in the above-mentioned embodiments, the present invention is applied to a substrate processing apparatus that performs chemical treatment with a chemical solution containing phosphoric acid, or a substrate processing apparatus that performs rinsing treatment, but the scope of application of the present invention is not limited to this. The present invention can be applied to the overall substrate processing technology in which the substrate is immersed in a processing liquid other than the chemical liquid and the rinsing liquid, and bubbles V are supplied to the substrate in the processing liquid to perform the substrate processing. [Industrial Availability]

本發明可應用於將基板浸漬於處理槽中貯存之藥液或純水等處理液內，並且於處理液內向上述基板供給氣泡而對其進行處理之基板處理裝置全體。The present invention can be applied to the entire substrate processing apparatus in which a substrate is immersed in a processing liquid such as a chemical solution or pure water stored in a processing tank, and bubbles are supplied to the substrate in the processing liquid to process the substrate.

1:基板處理系統 2:收納器載置部 3:擋閘驅動機構 4:基板移載機器人 5:姿勢變換機構 6:推進器 7:基板搬送機構 8:處理單元 9:控制部 31:擋閘 71:懸垂臂 81:第1藥液處理部(基板處理裝置) 82:第1沖洗處理部(基板處理裝置) 83:第2藥液處理部(基板處理裝置) 84:第2沖洗處理部(基板處理裝置) 85:乾燥處理部 810:升降器(基板保持部) 810a:第1升降器(基板保持部) 810b:第2升降器(基板保持部) 811:背板 812:支持構件 813:延出構件 814:升降器驅動機構 815:升降馬達 816:滾珠螺桿 817:升降底座 818:升降支柱 819:馬達驅動部 821:處理槽 821a:底壁 821b~821e:側壁 821f:貯存空間 821g:上方開口 822:溢出槽 822a:回收空間 823:外部容器 824:處理槽 830:處理液噴出部 831:處理液供給管 831a~831d:處理液供給管 832:處理液供給部 833:處理液回收部 834:處理液噴出口 839:輸流配管系統 840:氣泡供給部 841:起泡器 841a~841d:起泡器 842:氣體供給管 842b:氣體供給管 843:穿設部位 843a:穿設部位 843b:穿設部位 843d:穿設部位 843e:穿設部位 844:氣體供給部 845:氣泡噴出口 845a~845e:氣泡噴出口 846:氣體導入管 847:流量調節器 851:間隔板 861:整流板 F:晶圓搬送盒 L:液流 PT:間距 2PT:間距 V:氣泡 W:基板 1: Substrate processing system 2: Container placing part 3: Gate drive mechanism 4: Substrate transfer robot 5: Posture transformation mechanism 6: Thruster 7: Substrate conveying mechanism 8: Processing unit 9: Control Department 31: Stopper 71: Cantilever Arm 81: The first chemical solution processing unit (substrate processing device) 82: 1st rinse processing section (substrate processing device) 83: The second chemical solution processing unit (substrate processing device) 84: The second rinse processing unit (substrate processing device) 85: Drying Department 810: Lifter (substrate holding part) 810a: 1st lifter (substrate holding part) 810b: Second lifter (substrate holding part) 811: Backplane 812: Support widget 813: Extension member 814: Lifter drive mechanism 815: Lifting motor 816: Ball Screw 817: Lifting base 818: Lifting Prop 819: Motor drive part 821: Processing tank 821a: Bottom wall 821b~821e: Sidewall 821f: Storage space 821g: top opening 822: Overflow slot 822a: Reclaiming space 823: Outer container 824: Processing tank 830: Treatment liquid ejection part 831: Treatment liquid supply pipe 831a~831d: Treatment liquid supply pipe 832: Treatment liquid supply part 833: Treatment liquid recovery department 834: Treatment liquid ejection port 839: Flow piping system 840: Bubble supply part 841: Bubbler 841a~841d: Bubbler 842: Gas supply pipe 842b: Gas supply pipe 843: Wearing parts 843a: Piercing parts 843b: Wearing parts 843d: Piercing part 843e: Wearing parts 844: Gas Supply Department 845: Bubble ejection port 845a~845e: Bubble ejection port 846: Gas inlet pipe 847: Flow Regulator 851: Spacer 861: Rectifier plate F: Wafer transfer box L: liquid flow PT: Spacing 2PT: Pitch V: bubble W: substrate

圖1係表示具備本發明之基板處理裝置之第1實施方式的基板處理系統之概略構成之俯視圖。 圖2係表示本發明之基板處理裝置之第1實施方式的概略構成之模式圖。 圖3係模式性表示圖2所示之基板處理裝置之主要構成之分解組裝立體圖。 圖4係圖2之局部剖視圖。 圖5係表示保持於升降器之複數片基板、氣泡噴出口、處理液噴出口之配置關係之模式圖。 圖6係圖2所示之基板處理裝置之主要構成之俯視圖。 圖7係表示自(-X)方向觀察圖5所示之氣體供給管842得見之一部分之局部放大圖。 圖8係表示第1實施方式之基板處理裝置之比較例之模式圖。 圖9係本發明之基板處理裝置之第2實施方式之局部剖視圖。 圖10係表示保持於升降器之複數片基板、氣泡噴出口、處理液噴出口、間隔板之配置關係之模式圖。 圖11係表示保持於升降器之複數片基板、氣泡噴出口、處理液噴出口、間隔板之配置關係之模式圖。 圖12係表示另一形態之氣泡噴出口之局部放大圖。 圖13係表示另一形態之氣體供給管之局部放大圖。 圖14係表示另一形態之氣體供給管之局部放大圖。 圖15係表示另一形態之氣體供給管之局部放大圖。 圖16係表示另一形態之氣體供給管之局部放大圖。 圖17係表示另一形態之氣體供給管之局部放大圖。 圖18係表示另一形態之氣體供給管之局部放大圖。 圖19係表示另一形態之氣體供給管之局部放大圖。 FIG. 1 is a plan view showing a schematic configuration of a substrate processing system provided with a first embodiment of the substrate processing apparatus of the present invention. FIG. 2 is a schematic view showing a schematic configuration of the first embodiment of the substrate processing apparatus of the present invention. FIG. 3 is an exploded and assembled perspective view schematically showing the main components of the substrate processing apparatus shown in FIG. 2 . FIG. 4 is a partial cross-sectional view of FIG. 2 . FIG. 5 is a schematic diagram showing the arrangement relationship of a plurality of substrates held by the lifter, the air bubble ejection ports, and the processing liquid ejection ports. FIG. 6 is a plan view of the main structure of the substrate processing apparatus shown in FIG. 2 . Fig. 7 is a partially enlarged view showing a part of the gas supply pipe 842 shown in Fig. 5 viewed from the (-X) direction. FIG. 8 is a schematic view showing a comparative example of the substrate processing apparatus according to the first embodiment. 9 is a partial cross-sectional view of a second embodiment of the substrate processing apparatus of the present invention. FIG. 10 is a schematic view showing the arrangement relationship of a plurality of substrates held by the lifter, the air bubble ejection port, the processing liquid ejection port, and the partition plate. FIG. 11 is a schematic view showing the arrangement relationship of a plurality of substrates held by the lifter, the air bubble ejection port, the treatment liquid ejection port, and the partition plate. Fig. 12 is a partial enlarged view showing another form of the bubble discharge port. Fig. 13 is a partial enlarged view showing another form of the gas supply pipe. Fig. 14 is a partial enlarged view showing another form of the gas supply pipe. Fig. 15 is a partial enlarged view showing another form of the gas supply pipe. Fig. 16 is a partial enlarged view showing another form of the gas supply pipe. Fig. 17 is a partial enlarged view showing another form of the gas supply pipe. Fig. 18 is a partial enlarged view showing another form of the gas supply pipe. Fig. 19 is a partial enlarged view showing another form of the gas supply pipe.

831:處理液供給管 831: Treatment liquid supply pipe

834:處理液噴出口 834: Treatment liquid ejection port

840:氣泡供給部 840: Bubble supply part

841:起泡器 841: Bubbler

842:氣體供給管 842: Gas supply pipe

845:氣泡噴出口 845: Bubble ejection port

L:液流 L: liquid flow

PT:間距 PT: Spacing

V:氣泡 V: bubble

W:基板 W: substrate

Claims (12)

一種基板處理裝置，其特徵在於包含： 處理槽，其貯存將基板浸漬而加以處理之處理液； 基板保持部，其於上述處理槽內，使上述基板於水平方向上相互隔開地排列，將上述基板呈立起姿勢加以保持； 處理液噴出部，其形成上述處理液之液流，該液流自保持於上述基板保持部之上述基板之下方沿著上述基板流向上方；及 氣泡供給部，其配置於上述處理液噴出部與上述基板保持部之間，向上述處理槽中貯存之上述處理液內供給氣泡；且 上述氣泡供給部具有：氣體供給管，其向內部供給氣體；及氣泡噴出口，其設置於上述氣體供給管，向上述基板之排列方向噴出氣泡。 A substrate processing apparatus, characterized by comprising: a treatment tank, which stores a treatment liquid for dipping the substrate for treatment; a substrate holding part, which is arranged in the processing tank so that the substrates are spaced apart from each other in the horizontal direction, and holds the substrates in an upright posture; a processing liquid ejection part, which forms a liquid flow of the processing liquid, and the liquid flow flows upward along the substrate from below the substrate held in the substrate holding part; and a bubble supplying part, which is arranged between the processing liquid ejection part and the substrate holding part, and supplies bubbles into the processing liquid stored in the processing tank; and The said bubble supply part has a gas supply pipe which supplies a gas to the inside, and a bubble discharge port which is provided in the said gas supply pipe and discharges a bubble in the arrangement direction of the said board|substrate. 如請求項1之基板處理裝置，其中上述氣體供給管自上方觀察係沿著上述基板之主面而延設，且於側壁具有複數個氣泡噴出口， 上述氣泡噴出口所處之位置能向保持於上述基板保持部且相互鄰接之上述基板之間隙供給氣泡。 The substrate processing apparatus of claim 1, wherein the gas supply pipe is extended along the main surface of the substrate when viewed from above, and has a plurality of air bubble ejection ports on the side wall, The position of the air bubble ejection opening can supply air bubbles to the gap between the substrates held in the substrate holding portion and adjacent to each other. 如請求項2之基板處理裝置，其中上述處理液噴出部具有複數根向內部供給處理液之處理液供給管，且於上述處理液供給管之側壁具有複數個處理液噴出口， 上述處理液噴出口位於相互鄰接之上述基板之間隙之下方。 The substrate processing apparatus according to claim 2, wherein the processing liquid ejection portion has a plurality of processing liquid supply pipes for supplying the processing liquid to the inside, and has a plurality of processing liquid ejection ports on a side wall of the processing liquid supply pipe, The processing liquid ejection port is located below the gap between the adjacent substrates. 如請求項2或3之基板處理裝置，其中上述氣泡供給部具有複數根上述氣體供給管， 上述氣體供給管於水平方向上與其他氣體供給管鄰接，上述氣泡噴出口於大致水平方向上開設於上述基板之間隙之下方。 The substrate processing apparatus according to claim 2 or 3, wherein the bubble supply unit has a plurality of the gas supply pipes, The gas supply pipe is adjacent to other gas supply pipes in the horizontal direction, and the air bubble ejection port is opened below the gap of the substrate in a substantially horizontal direction. 如請求項4之基板處理裝置，其中上述氣泡噴出口位於自上述氣體供給管突設之空心狀之突設部位之前端。The substrate processing apparatus of claim 4, wherein the air bubble ejection port is located at the front end of the hollow protruding portion protruding from the gas supply pipe. 如請求項5之基板處理裝置，其中上述突設部位為柱狀形狀或錐狀形狀。The substrate processing apparatus according to claim 5, wherein the protruding portion has a columnar shape or a tapered shape. 如請求項4之基板處理裝置，其中上述氣泡噴出口為圓形形狀或橢圓形形狀。The substrate processing apparatus according to claim 4, wherein the air bubble ejection port has a circular shape or an elliptical shape. 如請求項2或3之基板處理裝置，其中上述基板以與鄰接基板正面彼此或背面彼此對向之狀態，保持於上述基板保持部。The substrate processing apparatus according to claim 2 or 3, wherein the substrate is held by the substrate holding portion in a state in which the front surfaces or the back surfaces of the adjacent substrates are opposed to each other. 如請求項8之基板處理裝置，其中上述基板呈與鄰接基板背面彼此對向之狀態，且於上述基板之背面與鄰接基板之背面之間具備間隔板。The substrate processing apparatus according to claim 8, wherein the substrate and the back surface of the adjacent substrate face each other, and a spacer is provided between the back surface of the substrate and the back surface of the adjacent substrate. 如請求項1至3中任一項之基板處理裝置，其中上述氣泡供給部由樹脂材料構成， 上述樹脂材料由選自聚醚醚酮、全氟烷氧基烷烴及聚四氟乙烯所組成之群中之至少1種材料構成。 The substrate processing apparatus according to any one of claims 1 to 3, wherein the air bubble supply portion is made of a resin material, The above-mentioned resin material is composed of at least one material selected from the group consisting of polyetheretherketone, perfluoroalkoxyalkane, and polytetrafluoroethylene. 如請求項10之基板處理裝置，其中上述氣泡噴出口經過親水化處理。The substrate processing apparatus according to claim 10, wherein the air bubble ejection port is subjected to hydrophilization treatment. 如請求項1至3中任一項之基板處理裝置，其中於上述氣體供給管之下方具備整流板。The substrate processing apparatus according to any one of claims 1 to 3, wherein a rectifying plate is provided below the gas supply pipe.
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