TW202206624A - Semiconductor component, plasma processing apparatus, and method for forming corrosion-resistant coating The application of the semiconductor components in advanced manufacturing processes can reduce the problem of particle contamination - Google Patents

Semiconductor component, plasma processing apparatus, and method for forming corrosion-resistant coating The application of the semiconductor components in advanced manufacturing processes can reduce the problem of particle contamination Download PDF

Info

Publication number
TW202206624A
TW202206624A TW110122195A TW110122195A TW202206624A TW 202206624 A TW202206624 A TW 202206624A TW 110122195 A TW110122195 A TW 110122195A TW 110122195 A TW110122195 A TW 110122195A TW 202206624 A TW202206624 A TW 202206624A
Authority
TW
Taiwan
Prior art keywords
corrosion
resistant coating
semiconductor component
fluorine
plasma
Prior art date
Application number
TW110122195A
Other languages
Chinese (zh)
Other versions
TWI827942B (en
Inventor
段蛟
孫祥
楊桂林
陳星建
Original Assignee
大陸商中微半導體設備（上海）股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大陸商中微半導體設備（上海）股份有限公司 filed Critical 大陸商中微半導體設備（上海）股份有限公司
Publication of TW202206624A publication Critical patent/TW202206624A/en
Application granted granted Critical
Publication of TWI827942B publication Critical patent/TWI827942B/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A semiconductor component, a plasma processing device, and a method for forming a corrosion-resistant coating, wherein the semiconductor component comprises: a semiconductor component body; a corrosion-resistant coating located on the surface of the semiconductor component body and made of rare earth element fluorine The oxide is composed of a crystalline phase and an amorphous phase, and the crystalline phase and the amorphous phase are located in the same layer, and the amorphous phase is dispersed in the crystalline phase. The application of the semiconductor components in advanced manufacturing processes can reduce the problem of particle contamination.

Description

半導體零部件、等離子體處理裝置及耐腐蝕塗層形成方法Semiconductor component, plasma processing apparatus, and method for forming corrosion-resistant coating

本發明涉及半導體領域，尤其涉及一種半導體零部件、等離子體處理裝置及耐腐蝕塗層形成方法。The invention relates to the field of semiconductors, in particular to a semiconductor component, a plasma processing device and a method for forming a corrosion-resistant coating.

等離子體蝕刻製程在集成電路製造領域發揮了關鍵作用。最新的5nm製程中等離子體蝕刻製程步驟數占總比已提升至17%以上。先進蝕刻製程製程的功率和步驟的大幅提升，要求等離子體蝕刻腔室內的零部件具有更高的耐等離子體物理轟擊及化學腐蝕性能，産生更少的微小顆粒污染及金屬污染源，進一步保障蝕刻設備製程的穩定性和可重複性。The plasma etch process plays a key role in the field of integrated circuit manufacturing. In the latest 5nm process, the total number of plasma etching process steps has increased to more than 17%. The substantial increase in the power and steps of the advanced etching process requires the components in the plasma etching chamber to have higher resistance to plasma physical bombardment and chemical corrosion, resulting in fewer micro-particle pollution and metal pollution sources, which further protects the etching equipment. Process stability and repeatability.

目前，在5nm或3nm及以下的製程中，存在著苛刻的顆粒污染要求，除了在整個零部件的生命周期內，要求小於28nm的顆粒小於10顆，而且要求貼地率越小越好，即0@28nm的顆粒的概率。為了滿足不斷縮小的線寬要求，等離子體蝕刻製程製程中採用的功率和步驟大幅提升。而目前的塗層在先進製程（5nm及以下）中逐漸出現失效，存在微小顆粒污染，不能很好的滿足先進製程的需求。At present, in the process of 5nm or 3nm and below, there are strict particle pollution requirements, in addition to the requirement of less than 10 particles smaller than 28nm in the whole life cycle of parts, and the smaller the ground contact ratio, the better, that is Probability of particles of 0@28nm. To meet ever-shrinking line width requirements, the power and steps used in the plasma etch process have increased dramatically. However, the current coating gradually fails in the advanced process (5nm and below), and there is contamination of tiny particles, which cannot well meet the needs of the advanced process.

本發明解决的技術問題是提供一種半導體零部件、等離子體處理裝置及耐腐蝕塗層形成方法，以在先進製程中降低顆粒污染。The technical problem solved by the present invention is to provide a semiconductor component, a plasma processing device and a method for forming a corrosion-resistant coating, so as to reduce particle pollution in an advanced manufacturing process.

為解决上述技術問題，本發明提供一種半導體零部件，包括：半導體零部件本體；耐腐蝕塗層，位於所述半導體零部件本體的表面，由稀土元素氟氧化物的結晶相和非晶相組成，且所述結晶相與非晶相位於同一層，非晶相瀰散在結晶相中。In order to solve the above technical problems, the present invention provides a semiconductor component, comprising: a semiconductor component body; a corrosion-resistant coating, located on the surface of the semiconductor component body, which is composed of a crystalline phase and an amorphous phase of rare earth oxyfluoride , and the crystalline phase and the amorphous phase are located in the same layer, and the amorphous phase is dispersed in the crystalline phase.

可選的，所述耐腐蝕塗層為結晶結構。Optionally, the corrosion-resistant coating has a crystalline structure.

可選的，所述耐腐蝕塗層稀土元素氟氧化物的稀土元素包括Y、Sc、La、Ce、Pr、Nd、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb或Lu中至少一種。Optionally, the rare earth element of the corrosion-resistant coating rare earth element oxyfluoride includes at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu A sort of.

可選的，所述同一層的結晶相與非晶相的稀土元素相同。Optionally, the crystal phase of the same layer is the same as the rare earth element of the amorphous phase.

可選的，所述同一層的結晶相與非晶相的稀土元素不相同。Optionally, the rare earth elements of the crystalline phase and the amorphous phase of the same layer are different.

可選的，所述耐腐蝕塗層的厚度為0.01微米～200微米。Optionally, the thickness of the corrosion-resistant coating is 0.01 micrometers to 200 micrometers.

可選的，所述非晶相位於結晶相的表面和結晶相的本體中。Optionally, the amorphous phase is located on the surface of the crystalline phase and in the bulk of the crystalline phase.

可選的，所述半導體零部件本體的材料包括：鋁合金、碳化矽、矽、石英、陶瓷等中的至少一種。Optionally, the material of the semiconductor component body includes: at least one of aluminum alloy, silicon carbide, silicon, quartz, ceramics, and the like.

可選的，所述耐腐蝕塗層的緻密度為98%～100%。Optionally, the density of the corrosion-resistant coating is 98% to 100%.

相應的，本發明還提供一種等離子體處理裝置，包括：反應腔，其內為等離子體環境；上述半導體零部件，位於所述反應腔內，暴露於所述等離子體環境中。Correspondingly, the present invention also provides a plasma processing device, comprising: a reaction chamber, in which a plasma environment is formed; the above-mentioned semiconductor components are located in the reaction chamber and are exposed to the plasma environment.

可選的，所述等離子體環境中包括氟、氯或氧中的至少一種。Optionally, the plasma environment includes at least one of fluorine, chlorine or oxygen.

可選的，所述等離子體處理裝置為等離子體蝕刻裝置或者等離子體清潔裝置。Optionally, the plasma processing device is a plasma etching device or a plasma cleaning device.

可選的，當所述等離子體蝕刻裝置為電感耦合等離子體蝕刻裝置時，所述零部件包括：陶瓷板、內襯套、氣體噴嘴、氣體分配板、氣管法蘭、靜電吸盤組件、覆蓋環、聚焦環、絕緣環和等離子體約束裝置中的至少一種。Optionally, when the plasma etching device is an inductively coupled plasma etching device, the components include: a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic chuck assembly, a cover ring , at least one of a focus ring, an insulating ring, and a plasma confinement device.

可選的，當等離子體蝕刻裝置為電容耦合等離子體蝕刻裝置時，所述零部件包括：噴淋頭、上接地環、移動環、氣體分配板、氣體緩衝板、靜電吸盤組件、下接地環、覆蓋環、聚焦環、絕緣環、可升降隔離環或等離子體約束裝置中的至少一種。Optionally, when the plasma etching device is a capacitively coupled plasma etching device, the components include: a shower head, an upper grounding ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic chuck assembly, and a lower grounding ring , at least one of a cover ring, a focus ring, an insulating ring, a liftable isolation ring, or a plasma confinement device.

可選的，所述反應腔內還包括：基座，用於承載待處理基板，所述待處理基板暴露於所述等離子體環境中；所述半導體零部件為多個，分別位於所述反應腔的頂部、反應腔的側壁以及所述基座的外圍，不同位置所半導體零部件的耐腐蝕塗層中氟含量的大小關係為：所述反應腔頂部的半導體零部件的耐腐蝕塗層中氟含量小於反應腔側壁的半導體零部件的耐腐蝕塗層中氟含量，且反應腔側壁的半導體零部件的耐腐蝕塗層中氟含量小於所述基座的外圍的半導體零部件的耐腐蝕塗層中氟含量。Optionally, the reaction chamber further includes: a base for carrying a substrate to be processed, and the substrate to be processed is exposed to the plasma environment; there are multiple semiconductor components, which are respectively located in the reaction chamber The top of the chamber, the sidewall of the reaction chamber and the periphery of the base, the size relationship of the fluorine content in the corrosion-resistant coating of the semiconductor components at different positions is: the corrosion-resistant coating of the semiconductor components on the top of the reaction chamber The fluorine content is less than the fluorine content in the corrosion-resistant coating of the semiconductor components on the sidewall of the reaction chamber, and the fluorine content in the corrosion-resistant coating of the semiconductor components on the sidewall of the reaction chamber is less than the fluorine content in the corrosion-resistant coating of the semiconductor components on the periphery of the base. Fluorine content in the layer.

相應的，本發明還提供一種在半導體零部件本體上形成耐腐蝕塗層的方法，包括：提供半導體零部件本體；在所述半導體零部件本體上形成上述耐腐蝕塗層。Correspondingly, the present invention also provides a method for forming a corrosion-resistant coating on a semiconductor component body, comprising: providing a semiconductor component body; and forming the above-mentioned corrosion-resistant coating on the semiconductor component body.

可選的，所述耐腐蝕塗層的形成方法包括：將半導體零部件本體置於真空腔室內；使含稀土氟靶材和稀土含氧靶材與半導體零部件本體相對設置；使含稀土氟靶材和稀土含氧靶材與半導體零部件本體相對設置之後，加熱半導體零部件本體，激發靶材形成分子流，並向真空反應腔內通入含氟、含氧製程氣體，所述分子流和製程氣體在半導體零部件本體表面形成由結晶相和非晶相組成的耐腐蝕塗層。Optionally, the method for forming the corrosion-resistant coating includes: placing the semiconductor component body in a vacuum chamber; arranging the rare earth fluorine-containing target material and the rare earth oxygen-containing target material to be opposite to the semiconductor component body; making the rare earth fluorine-containing target material After the target material and the rare earth oxygen-containing target material and the semiconductor component body are set opposite to each other, the semiconductor component body is heated, the target material is excited to form a molecular flow, and a fluorine-containing and oxygen-containing process gas is introduced into the vacuum reaction chamber. and process gases to form a corrosion-resistant coating composed of crystalline and amorphous phases on the surface of the semiconductor component body.

可選的，調整含氟、含氧製程氣體的原子比例，使含氟、含氧製程氣體的原子比例為3:7~7:3。Optionally, the atomic ratio of the fluorine-containing and oxygen-containing process gases is adjusted so that the atomic ratio of the fluorine-containing and oxygen-containing process gases is 3:7 to 7:3.

可選的，設置所述稀土氟靶材與稀土氧靶材之間的間距與稀土氟靶材和稀土氧靶材到半導體零部件本體高度在1:1~1:20之間；所述高度的範圍為：10厘米～2米。Optionally, the distance between the rare earth fluorine target material and the rare earth oxygen target material and the height of the rare earth fluorine target material and the rare earth oxygen target material to the semiconductor component body are set to be between 1:1 and 1:20; the height The range is: 10 cm to 2 meters.

可選的，調控含氟靶材和含氧靶材的激發功率比值在1:1~1:20之間。Optionally, the excitation power ratio of the fluorine-containing target and the oxygen-containing target is adjusted to be between 1:1 and 1:20.

可選的，所述非晶相用於調整耐腐蝕塗層中氟的含量。Optionally, the amorphous phase is used to adjust the fluorine content in the corrosion-resistant coating.

可選的，所述耐腐蝕塗層中氟的原子百分比含量為：5%～90%。Optionally, the atomic percentage content of fluorine in the corrosion-resistant coating is 5% to 90%.

可選的，所述耐腐蝕塗層的形成製程包括：物理氣相沉積製程、化學氣相沉積製程和原子層沉積製程中的至少一種。Optionally, the formation process of the corrosion-resistant coating includes at least one of a physical vapor deposition process, a chemical vapor deposition process, and an atomic layer deposition process.

可選的，還包括：利用輔助增強源對等離子體進行增強處理；所述輔助增強源包括：等離子體源、離子束源、微波源和射頻源中的至少一種。Optionally, the method further includes: using an auxiliary enhancement source to perform enhancement treatment on the plasma; the auxiliary enhancement source includes at least one of a plasma source, an ion beam source, a microwave source and a radio frequency source.

與現有技術相比，本發明實施例的技術方案具有以下有益效果：Compared with the prior art, the technical solutions of the embodiments of the present invention have the following beneficial effects:

本發明技術方案提供的半導體零部件中， 所述半導體零部件本體的表面具有耐腐蝕塗層，所述耐腐蝕塗層中的結晶相用於使耐腐蝕塗層具有較好的穩定性；而所述非晶相具有長程無序的網絡結構特徵，使得非晶相能够承受相比結晶相更大的內應力，而同一層中既有結晶相又有非晶相，降低耐腐蝕塗層的內應力，有利於提高耐腐蝕塗層的服役時間；進一步地，在保持整體耐腐蝕塗層穩定的結晶結構前提下，非晶相調控耐腐蝕塗層中的F含量，進一步可以根據蝕刻腔體內F等離子體的強度設計具有不同F含量塗層包覆的零部件，降低塗層在蝕刻腔體中局部被優先腐蝕而形成微小顆粒污染物的風險，提高製程應用水準。In the semiconductor component provided by the technical solution of the present invention, the surface of the semiconductor component body has a corrosion-resistant coating, and the crystalline phase in the corrosion-resistant coating is used to make the corrosion-resistant coating have better stability; and The amorphous phase has the characteristics of long-range disordered network structure, so that the amorphous phase can withstand greater internal stress than the crystalline phase, and there are both crystalline and amorphous phases in the same layer, which reduces the corrosion resistance of the corrosion-resistant coating. The internal stress is beneficial to improve the service time of the corrosion-resistant coating; further, on the premise of maintaining the stable crystal structure of the overall corrosion-resistant coating, the amorphous phase can control the F content in the corrosion-resistant coating, which can be further adjusted according to the etching cavity. The strength design of F plasma has parts covered with different F content coatings, which reduces the risk of the coating being preferentially corroded locally in the etching chamber to form tiny particle contaminants, and improves the application level of the process.

本發明技術方案提供一種半導體零部件、等離子體處理裝置及耐腐蝕塗層形成方法，其中，所述半導體零部件包括：半導體零部件本體；耐腐蝕塗層，位於所述半導體零部件本體的表面，由稀土元素氟氧化物的結晶相和非晶相組成，且所述結晶相與非晶相位於同一層，非晶相瀰散在結晶相中。所述半導體零部件在先進製程中能够降低顆粒污染。The technical solution of the present invention provides a semiconductor component, a plasma processing device and a method for forming a corrosion-resistant coating, wherein the semiconductor component includes: a semiconductor component body; and a corrosion-resistant coating located on the surface of the semiconductor component body , which is composed of a crystal phase and an amorphous phase of rare earth oxyfluoride, and the crystal phase and the amorphous phase are located in the same layer, and the amorphous phase is dispersed in the crystal phase. The semiconductor components are capable of reducing particle contamination in advanced manufacturing processes.

為使本發明的上述目的、特徵和有益效果能够更為明顯易懂，下面結合附圖對本發明的具體實施例做詳細的說明。In order to make the above objects, features and beneficial effects of the present invention more clearly understood, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

本發明的等離子體處理裝置為等離子體蝕刻裝置或者等離子體清潔裝置，以下以所述等離子體蝕刻裝置為電感耦合等離子體蝕刻裝置進行說明。The plasma processing apparatus of the present invention is a plasma etching apparatus or a plasma cleaning apparatus, and the following description is made by taking the plasma etching apparatus as an inductively coupled plasma etching apparatus.

圖1是本發明一種等離子體處理裝置的結構示意圖。FIG. 1 is a schematic structural diagram of a plasma processing apparatus of the present invention.

請參考圖1，等離子體反應裝置包括：反應腔109，其內為等離子體環境；半導體零部件，暴露於等離子體環境中。Referring to FIG. 1 , the plasma reaction apparatus includes: a reaction chamber 109 , which is a plasma environment; and semiconductor components exposed to the plasma environment.

等離子體反應裝置還包括：基座，基座用於承載待處理基板，等離子體用於對待處理基板進行處理。所述等離子體環境中含有氟、氯和氧中的至少一種，使所述等離子體具有較強的腐蝕性，為了防止半導體零部件本體的表面被等離子體腐蝕，因此需要在半導體零部件本體的表面塗覆耐腐蝕塗層。The plasma reaction device further includes: a base, where the base is used for carrying the substrate to be processed, and the plasma is used for processing the substrate to be processed. The plasma environment contains at least one of fluorine, chlorine and oxygen, which makes the plasma highly corrosive. The surface is coated with a corrosion-resistant coating.

在本實施例中，等離子體反應裝置為電感耦合等離子體反應裝置，相應的，暴露於等離子體環境中的半導體零部件包括：襯套101、氣體噴嘴102、靜電卡盤103、聚焦環104、絕緣環105、覆蓋環106、半導體零部件本體等離子體約束裝置107、陶瓷蓋板108或氣體連接法蘭（圖未示）。這些零部件的表面需要塗覆耐腐蝕塗層以防止等離子體的腐蝕。In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device. Correspondingly, the semiconductor components exposed to the plasma environment include: a bushing 101, a gas nozzle 102, an electrostatic chuck 103, a focus ring 104, Insulation ring 105 , cover ring 106 , semiconductor component body plasma confinement device 107 , ceramic cover plate 108 or gas connection flange (not shown). The surfaces of these parts need to be coated with corrosion-resistant coatings to prevent plasma corrosion.

具體應用中，等離子體反應裝置也可以為電容耦合等離子體反應裝置，相應的，暴露於等離子體環境中的零部件包括：噴淋頭、氣體分配板、上接地環、下接地環、氣體管路、聚焦環、絕緣環、靜電卡盤、覆蓋環、可升降隔離環或半導體零部件本體等離子體約束裝置中的至少一種。這些零部件的表面需要塗覆耐腐蝕塗層以防止等離子體的腐蝕。In specific applications, the plasma reaction device can also be a capacitively coupled plasma reaction device. Correspondingly, the parts exposed to the plasma environment include: shower head, gas distribution plate, upper ground ring, lower ground ring, and gas pipe At least one of a circuit, a focus ring, an insulating ring, an electrostatic chuck, a cover ring, a liftable isolation ring, or a plasma confinement device for a semiconductor component body. The surfaces of these parts need to be coated with corrosion-resistant coatings to prevent plasma corrosion.

以下對半導體零部件進行詳細說明：The semiconductor components are described in detail below:

請參考圖2，半導體零部件200包括：半導體零部件本體200a；耐腐蝕塗層200b，位於所述半導體零部件本體200a的表面，由稀土元素氟氧化物的結晶相和非晶相組成，且所述結晶相與非晶相位於同一層，所述非晶相瀰散在結晶相中。Referring to FIG. 2, a semiconductor component 200 includes: a semiconductor component body 200a; a corrosion-resistant coating 200b, located on the surface of the semiconductor component body 200a, is composed of a crystalline phase and an amorphous phase of rare earth oxyfluoride, and The crystalline phase and the amorphous phase are located in the same layer, and the amorphous phase is dispersed in the crystalline phase.

所述半導體零部件本體200a的材料包括：鋁合金、碳化矽、矽、石英或陶瓷等中的至少一種。The material of the semiconductor component body 200a includes at least one of aluminum alloy, silicon carbide, silicon, quartz or ceramics.

所述耐腐蝕塗層200b包含稀土元素包括Y、Sc、La、Ce、Pr、Nd、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb或Lu中至少一種。The corrosion-resistant coating 200b contains rare earth elements including at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu.

所述耐腐蝕塗層200b用於保護半導體零部件本體200a，防止半導體零部件本體200a受到等離子體的腐蝕。具體的，儘管所述耐腐蝕塗層200b中包含非晶相和結晶相，但是，整體上，耐腐蝕塗層200b仍為結晶結構，結晶結構通常都較穩定，因此，所述耐腐蝕塗層200b的性能較穩定。所述非晶相瀰散在結晶相中，具體的，所述非晶相位於結晶相的表面和內部都具有非晶相。由於所述非晶相具有網絡相，且具有長程無序的相特徵，使得非晶相能够承受相比於晶體相更大的內應力，也就是說非晶相能够降低耐腐蝕塗層整體的內應力，可降低耐腐蝕塗層産生裂紋而脫落，因此，有利於提高耐腐蝕塗層的服役時間。進一步地，在保持整體耐腐蝕塗層穩定的結晶相前提下，非晶相調控塗層中的F含量，與只有結晶相的YOF塗層相比，由結晶相和非晶相組成的耐腐蝕塗層中的F含量可以進一步提高，具有高F含量（或者濃度梯度）的耐腐蝕塗層能够抵抗等離子體在塗層表面的擴散和進一步的化學腐蝕，降低塗層在蝕刻腔體中局部被優先腐蝕而形成微小顆粒污染物的風險，即：所述耐腐蝕塗層200b應用於先進的製程（5納米及以下）能够承受更高的功率和更長時間的等離子體腐蝕，而不易産生顆粒污染問題。The corrosion-resistant coating 200b is used to protect the semiconductor component body 200a and prevent the semiconductor component body 200a from being corroded by plasma. Specifically, although the corrosion-resistant coating 200b contains an amorphous phase and a crystalline phase, on the whole, the corrosion-resistant coating 200b still has a crystalline structure, and the crystalline structure is usually relatively stable. Therefore, the corrosion-resistant coating The performance of 200b is relatively stable. The amorphous phase is dispersed in the crystalline phase. Specifically, the amorphous phase has an amorphous phase on the surface and inside of the crystalline phase. Since the amorphous phase has a network phase and has long-range disordered phase characteristics, the amorphous phase can withstand greater internal stress than the crystalline phase, that is to say, the amorphous phase can reduce the overall corrosion resistance of the corrosion-resistant coating. The internal stress can reduce the crack and fall off of the corrosion-resistant coating, so it is beneficial to improve the service time of the corrosion-resistant coating. Further, under the premise of maintaining the stable crystalline phase of the overall corrosion-resistant coating, the amorphous phase modulates the F content in the coating. Compared with the YOF coating with only the crystalline phase, the corrosion-resistant coating composed of the crystalline phase and the amorphous phase is more stable. The F content in the coating can be further increased, and the corrosion-resistant coating with high F content (or concentration gradient) can resist the diffusion of plasma on the coating surface and further chemical corrosion, and reduce the local corrosion of the coating in the etching chamber. The risk of preferential corrosion to form fine particle contamination, that is: the corrosion-resistant coating 200b applied to advanced processes (5nm and below) can withstand higher power and longer plasma corrosion without generating particles pollution problem.

在實際的製程應用中，不同製程過程所需的等離子體強度不同，可根據等離子體環境的強弱决定所述耐腐蝕塗層200b中氟的含量，具體的，當等離子體環境的腐蝕能力較強時，則提高所述耐腐蝕塗層200b中氟的含量；相反的，當等離子體環境的腐蝕能力較弱時，則所述耐腐蝕塗層200b中氟的含量無需太高就能够滿足耐腐蝕的要求。In the actual process application, the plasma intensity required by different processes is different, and the content of fluorine in the corrosion-resistant coating 200b can be determined according to the strength of the plasma environment. Specifically, when the plasma environment has strong corrosion ability , the content of fluorine in the corrosion-resistant coating 200b is increased; on the contrary, when the corrosion ability of the plasma environment is weak, the content of fluorine in the corrosion-resistant coating 200b does not need to be too high to satisfy the corrosion resistance requirements.

請參考圖3，通常會在基座上施加一偏置功率源，所述偏置功率源用於使等離子體中帶電粒子垂直向基座表面轟擊，以實現對基座表面待處理基板的處理。由於基座周圍的零部件表面與所述待處理基板表面平行，因此，基座周圍對耐腐蝕塗層的腐蝕作用為物理作用增強的化學腐蝕，其腐蝕速率大於反應腔側壁和頂部，因此，可使所述反應腔頂部的半導體零部件（襯底A）的耐腐蝕塗層中氟含量小於反應腔側壁的半導體零部件（襯底B）的耐腐蝕塗層中氟含量，且反應腔側壁的半導體零部件（襯底B）的耐腐蝕塗層中氟含量小於所述基座的外圍的半導體零部件（襯底C）的耐腐蝕塗層中氟含量，即：在同一反應腔不同位置的半導體零部件本體表面的耐腐蝕塗層200b中氟的含量不同，使得不同位置的半導體零部件本體均不易被等離子體腐蝕，有利於降低反應腔內的顆粒污染問題。其中，所述腐蝕不僅包括化學腐蝕還包括物理轟擊。Referring to FIG. 3 , a bias power source is usually applied to the susceptor, and the bias power source is used to make the charged particles in the plasma bombard the surface of the susceptor vertically, so as to realize the treatment of the substrate to be treated on the surface of the susceptor . Since the surface of the parts around the base is parallel to the surface of the substrate to be processed, the corrosion effect of the corrosion-resistant coating around the base is chemical corrosion enhanced by physical action, and its corrosion rate is higher than that of the sidewall and top of the reaction chamber. Therefore, The fluorine content in the corrosion-resistant coating of the semiconductor component (substrate A) at the top of the reaction chamber can be made smaller than the fluorine content in the corrosion-resistant coating of the semiconductor component (substrate B) on the sidewall of the reaction chamber, and the sidewall of the reaction chamber can be The fluorine content in the corrosion-resistant coating of the semiconductor component (substrate B) is less than the fluorine content in the corrosion-resistant coating of the semiconductor component (substrate C) on the periphery of the susceptor, that is, at different positions in the same reaction chamber The content of fluorine in the corrosion-resistant coating 200b on the surface of the semiconductor component body is different, so that the semiconductor component body at different positions is not easily corroded by plasma, which is beneficial to reduce the particle pollution problem in the reaction chamber. Wherein, the corrosion includes not only chemical corrosion but also physical bombardment.

在本實施例中，所述耐腐蝕塗層200b的緻密度為98%～100%，使得所述耐腐蝕塗層200b耐等離子體腐蝕的能力較強。In this embodiment, the density of the corrosion-resistant coating 200b is 98%-100%, so that the corrosion-resistant coating 200b has a strong ability to resist plasma corrosion.

在本實施例中，所述耐腐蝕塗層200b的厚度為：0.01微米～200微米。In this embodiment, the thickness of the corrosion-resistant coating 200b is: 0.01 μm˜200 μm.

在其它實施例中，所述耐腐蝕塗層還可以為其它厚度。In other embodiments, the corrosion-resistant coating may also be of other thicknesses.

在一種實施例中，所述同一層的結晶相與非晶相的稀土元素不相同，例如：所述結晶相為氟氧化釔，而所述非晶相為氟氧化鈰，所述氟氧化鈰用於提高耐腐蝕塗層200b的抗腐蝕能力，降低顆粒污染問題。In an embodiment, the crystalline phase of the same layer is different from the rare earth element of the amorphous phase, for example, the crystalline phase is yttrium oxyfluoride, and the amorphous phase is cerium oxyfluoride, and the cerium oxyfluoride It is used to improve the corrosion resistance of the corrosion-resistant coating 200b and reduce the problem of particle contamination.

在另一種實施例中，所述同一層的結晶相與非晶相的稀土元素相同，例如：所述結晶相和非晶相均為氟氧化釔，這樣設計的意義在於：所述耐腐蝕塗層中非晶和結晶具有相同的組成元素，原子、分子勢場比較均勻，使得所述耐腐蝕塗層能够保持相對較低的勢能，維持非晶和結晶相的相對穩定，使耐腐蝕塗層200b的穩定性較好，不易發生漂移。In another embodiment, the crystalline phase of the same layer is the same as the rare earth element of the amorphous phase, for example, both the crystalline phase and the amorphous phase are yttrium oxyfluoride. The significance of this design is: the corrosion-resistant coating The amorphous and crystalline layers in the layer have the same constituent elements, and the atomic and molecular potential fields are relatively uniform, so that the corrosion-resistant coating can maintain a relatively low potential energy, maintain the relative stability of the amorphous and crystalline phases, and make the corrosion-resistant coating relatively stable. 200b has better stability and is not prone to drift.

相應的，本發明還提供一種在半導體零部件本體上形成耐腐蝕塗層的方法，請參考圖4。Correspondingly, the present invention also provides a method for forming a corrosion-resistant coating on a semiconductor component body, please refer to FIG. 4 .

圖4是本發明在半導體零部件本體表面形成耐腐蝕塗層的製程流程圖。4 is a flow chart of the process of forming a corrosion-resistant coating on the surface of the semiconductor component body according to the present invention.

請參考圖4，步驟S1：提供半導體零部件本體；步驟S2：在所述半導體零部件本體上形成上述耐腐蝕塗層。Please refer to FIG. 4 , step S1 : providing a semiconductor component body; step S2 : forming the above-mentioned corrosion-resistant coating on the semiconductor component body.

所述耐腐蝕塗層的形成製程包括：物理氣相沉積製程、化學氣相沉積製程和原子層沉積製程中的至少一種。The formation process of the corrosion-resistant coating includes at least one of a physical vapor deposition process, a chemical vapor deposition process, and an atomic layer deposition process.

還包括：利用輔助增強源對等離子體進行增強處理；所述輔助增強源包括：等離子體源、離子束源、微波源和射頻源中的至少一種。It also includes: using an auxiliary enhancement source to enhance the plasma; the auxiliary enhancement source includes at least one of a plasma source, an ion beam source, a microwave source and a radio frequency source.

以下以利用物理氣相沉積製程形成所述耐腐蝕塗層為例進行示意性說明：The following is a schematic illustration of using the physical vapor deposition process to form the corrosion-resistant coating as an example:

圖5為本發明利用物理氣相沉積製程形成耐腐蝕塗層的裝置示意圖。FIG. 5 is a schematic diagram of an apparatus for forming a corrosion-resistant coating by using a physical vapor deposition process according to the present invention.

請參考圖5，真空腔室300；稀土氟靶材302a、稀土氧靶材302b和半導體零部件本體301，位於所述真空腔室300內，且稀土氟靶材302a和稀土氧靶材302b與半導體零部件本體301相對設置。Please refer to FIG. 5, a vacuum chamber 300; rare earth fluorine target 302a, rare earth oxygen target 302b and semiconductor component body 301 are located in the vacuum chamber 300, and rare earth fluorine target 302a and rare earth oxygen target 302b are connected with The semiconductor component bodies 301 are disposed opposite to each other.

在一種實施例中，所述耐腐蝕塗層303的形成方法包括：將半導體零部件本體301置於真空腔室內；使稀土氟靶材302a、稀土氧靶材302b與半導體零部件本體301相對設置；使稀土氟靶材302a和稀土氧靶材302b與半導體零部件本體301相對設置之後，加熱半導體零部件本體301，激發稀土氟靶材302a和稀土氧靶材302b形成分子流，並向真空腔室300內通入含氟、含氧製程氣體，所述分子流和製程氣體在半導體零部件本體301表面形成結晶和非晶相的耐腐蝕塗層303。In one embodiment, the method for forming the corrosion-resistant coating 303 includes: placing the semiconductor component body 301 in a vacuum chamber; making the rare earth fluorine target 302a and the rare earth oxygen target 302b opposite to the semiconductor component body 301 ; After the rare earth fluorine target 302a and the rare earth oxygen target 302b and the semiconductor component body 301 are set opposite to each other, the semiconductor component body 301 is heated, and the rare earth fluorine target 302a and the rare earth oxygen target 302b are excited to form a molecular flow and flow to the vacuum chamber. A fluorine-containing and oxygen-containing process gas is introduced into the chamber 300 , and the molecular flow and the process gas form a crystalline and amorphous corrosion-resistant coating 303 on the surface of the semiconductor component body 301 .

在本實施例中，所述製程氣體中氧原子主要用於控制形成結晶相，氟原子主要用於控制形成非晶相，通過調控製程氣體中氟/氧原子比例在3:7~7:3之間，能够調控耐腐蝕塗層中結晶相和非晶相的比例、以及耐腐蝕塗層中氟含量，使得耐腐蝕塗層具有較好的耐腐蝕特性，有利於降低産生顆粒污染的風險。調控製程氣體中氟/氧原子比例還可以在3:7~4:6之間或者4:6~2:1之間或者2:1~7:3之間。In this embodiment, the oxygen atoms in the process gas are mainly used to control the formation of a crystalline phase, and the fluorine atoms are mainly used to control the formation of an amorphous phase. By adjusting the ratio of fluorine/oxygen atoms in the process gas to 3:7~7:3 In between, the ratio of crystalline phase and amorphous phase in the corrosion-resistant coating and the fluorine content in the corrosion-resistant coating can be adjusted, so that the corrosion-resistant coating has better corrosion resistance characteristics, which is beneficial to reduce the risk of particle pollution. The fluorine/oxygen atomic ratio in the process gas can also be adjusted between 3:7~4:6, or 4:6~2:1, or 2:1~7:3.

在另一種實施例中，所述耐腐蝕塗層的形成方法包括：將半導體零部件本體301置於真空腔室300內；設置含稀土氟靶材302a和稀土含氧靶材302b，稀土氟靶材302a和稀土氧靶材302b與半導體零部件本體301相對設置，稀土氟靶材302a與稀土氧靶材302b之間的間距為d，稀土氟靶材302a和稀土氧靶材302b到半導體零部件本體高度為h，設置d：h在1:1~1:20之間；設置好間距d和高度h之後，加熱半導體零部件本體，激發稀土氟靶材302a和稀土氧靶材302b形成分子流，通入含氟、含氧製程氣體，分子流和製程氣體在半導體零部件本體301表面形成由結晶相和非晶相組成的耐腐蝕塗層303。In another embodiment, the method for forming the corrosion-resistant coating includes: placing the semiconductor component body 301 in the vacuum chamber 300; setting the rare earth fluorine-containing target 302a and the rare earth oxygen-containing target 302b, the rare earth fluorine target The rare earth fluorine target 302a and the rare earth oxygen target 302b are disposed opposite to the semiconductor component body 301, the distance between the rare earth fluorine target 302a and the rare earth oxygen target 302b is d, and the rare earth fluorine target 302a and the rare earth oxygen target 302b are connected to the semiconductor component. The height of the body is h, and d:h is set between 1:1 and 1:20; after setting the spacing d and the height h, the semiconductor component body is heated to excite the rare earth fluorine target 302a and the rare earth oxygen target 302b to form molecular flow , the process gas containing fluorine and oxygen is introduced, and the molecular flow and the process gas form a corrosion-resistant coating 303 composed of a crystalline phase and an amorphous phase on the surface of the semiconductor component body 301 .

其中，d：h還可以設置在1:1~1:8之間或者1:8~1:15之間或者1:15~1:20。Among them, d:h can also be set between 1:1~1:8 or 1:8~1:15 or 1:15~1:20.

根據實際製程需要設置d：h值，能够調整耐腐蝕塗層303中結晶相和非晶相的比例，這是因為：含氟靶材302a被激發後分子流激發功率低於含氧靶材302b的激發功率，高度h越高，含氟分子流運動時間越長，通過輻射損失的激發功率越多越快，因而在塗層中形成的非晶相越多。通過調整所述耐腐蝕塗層中結晶相和非晶相的比例，使耐腐蝕塗層具有良好的耐腐蝕能力，有利於降低産生顆粒污染的風險。The d:h value can be set according to the actual process requirements, and the ratio of the crystalline phase and the amorphous phase in the corrosion-resistant coating 303 can be adjusted. This is because the excitation power of the molecular flow after the fluorine-containing target 302a is excited is lower than that of the oxygen-containing target 302b The higher the height h, the longer the movement time of the fluorine-containing molecular flow, the more and faster the excitation power is lost through radiation, and the more amorphous phases are formed in the coating. By adjusting the ratio of crystalline phase and amorphous phase in the corrosion-resistant coating, the corrosion-resistant coating has good corrosion resistance, which is beneficial to reduce the risk of particle pollution.

在本實施例中，所述高度h的範圍為：10厘米～2米，選擇所述高度h的意義在於：若所述高度h小於10厘米，所形成的耐腐蝕塗層中只有結晶相而沒有非晶相，使耐腐蝕塗層的抗腐蝕能力較差；若所述高度h大於2米，使所形成的耐腐蝕塗層中只有非晶相而沒有結晶相，使耐腐蝕塗層的穩定性較差。所述高度h的範圍還可以設置為：10厘米～80厘米之間或者80厘米～1.2米之間或者1.2米～2米之間。In this embodiment, the range of the height h is: 10 cm to 2 m. The significance of selecting the height h is: if the height h is less than 10 cm, only the crystalline phase is formed in the corrosion-resistant coating. There is no amorphous phase, so that the corrosion resistance of the corrosion-resistant coating is poor; if the height h is greater than 2 meters, the formed corrosion-resistant coating has only an amorphous phase without a crystalline phase, which makes the corrosion-resistant coating stable. Poor sex. The range of the height h may also be set to be between 10 cm and 80 cm, or between 80 cm and 1.2 meters, or between 1.2 meters and 2 meters.

在又一種實施例中，所述耐腐蝕塗層的形成方法包括：將所述半導體零部件本體301置於真空腔室300內；設置含稀土氟靶材302a和稀土含氧靶材302b，使稀土氟靶材302a和稀土含氧靶材302b與半導體零部件本體301相對設置，調節所述稀土氟靶材302a和稀土含氧靶材302b的激發功率；調節所述稀土氟靶材302a和稀土含氧靶材302b的激發功率之後，加熱半導體零部件本體，激發稀土氟靶材302a和稀土含氧靶材302b形成分子流，通入含氟、含氧製程氣體，分子流和製程氣體在半導體零部件本體表面形成由結晶相和非晶相組成的耐腐蝕塗層。In yet another embodiment, the method for forming the corrosion-resistant coating includes: placing the semiconductor component body 301 in a vacuum chamber 300; setting a rare earth-containing fluorine target 302a and a rare-earth oxygen-containing target 302b, so that The rare earth fluorine target 302a and the rare earth oxygen-containing target 302b are arranged opposite to the semiconductor component body 301 to adjust the excitation power of the rare earth fluorine target 302a and the rare earth oxygen target 302b; adjust the rare earth fluorine target 302a and the rare earth After the excitation power of the oxygen-containing target 302b, the semiconductor component body is heated, and the rare-earth fluorine target 302a and the rare-earth oxygen-containing target 302b are excited to form a molecular flow, and the process gas containing fluorine and oxygen is introduced, and the molecular flow and the process gas are in the semiconductor. A corrosion-resistant coating composed of crystalline phase and amorphous phase is formed on the surface of the component body.

根據實際製程需要調控含氟靶材302a和含氧靶材302b的激發功率P1、P2，進而調節分子流中的氟/氧比例，控制形成塗層中的結晶相和非晶相的比例。其中，P1和P2的比值P1：P2在1:1~1:20之間，使耐腐蝕塗層具有良好的耐腐蝕能力，有利於降低産生顆粒污染的風險。P1和P2的比值還可以為1:1~1:7或者1:7~1:13或者1:13~1:20。在這裡需要說明的是，含氟靶材302a激發出氟所需的功率較低，含氧靶材302b激發出氧所需的功率較高。The excitation powers P1 and P2 of the fluorine-containing target 302a and the oxygen-containing target 302b are adjusted according to the actual process requirements, thereby adjusting the fluorine/oxygen ratio in the molecular flow, and controlling the ratio of crystalline phase and amorphous phase in the formed coating. Among them, the ratio of P1 and P2, P1:P2, is between 1:1 and 1:20, so that the corrosion-resistant coating has good corrosion resistance and is conducive to reducing the risk of particle pollution. The ratio of P1 to P2 may also be 1:1~1:7 or 1:7~1:13 or 1:13~1:20. It should be noted here that the power required for the fluorine-containing target 302a to excite fluorine is relatively low, and the power required for the oxygen-containing target 302b to excite oxygen is relatively high.

所述非晶相用於調整耐腐蝕塗層303中氟的含量，以滿足不同製程或者不同位置需要，使得耐腐蝕塗層303抗腐蝕的能力較強，有利於降低顆粒污染問題。在本實施例中，所述耐腐蝕塗層303中氟的含量為：5%～90%。所述耐腐蝕塗層中氟的含量為：5%～34%或者34%～50%或者50%～80%或者80%～100%。The amorphous phase is used to adjust the content of fluorine in the corrosion-resistant coating 303 to meet the needs of different processes or different locations, so that the corrosion-resistant coating 303 has strong corrosion resistance, which is beneficial to reduce particle pollution. In this embodiment, the content of fluorine in the corrosion-resistant coating 303 is 5% to 90%. The content of fluorine in the corrosion-resistant coating is: 5%-34% or 34%-50% or 50%-80% or 80%-100%.

雖然本發明揭露如上，但本發明並非限定於此。任何本領域技術人員，在不脫離本發明的精神和範圍內，均可作各種更動與修改，因此本發明的保護範圍應當以申請專利範圍所限定的範圍為準。Although the present invention is disclosed above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be based on the scope defined by the scope of the patent application.

101:襯套 102:氣體噴嘴 103:靜電卡盤 104:聚焦環 105:絕緣環 106:覆蓋環 107:半導體零部件本體等離子體約束裝置 108:陶瓷蓋板 109:反應腔 200:半導體零部件 200a:半導體零部件本體 200b:耐腐蝕塗層 300:真空腔室 301:半導體零部件本體 302a:稀土氟靶材 302b:稀土氧靶材 303:耐腐蝕塗層 d:間距 h:高度 S1,S2:步驟101: Bushing 102: Gas nozzle 103: Electrostatic chuck 104: Focus Ring 105: Insulation ring 106: Cover Ring 107: Plasma confinement device for semiconductor parts body 108: Ceramic cover 109: reaction chamber 200: Semiconductor Components 200a: body of semiconductor components 200b: Corrosion Resistant Coating 300: Vacuum Chamber 301: Semiconductor parts body 302a: Rare earth fluorine target 302b: Rare Earth Oxygen Target 303: Corrosion Resistant Coating d: spacing h: height S1, S2: Steps

圖1是本發明一種等離子體處理裝置的結構示意圖； 圖2是本發明一種半導體零部件的結構示意圖； 圖3是本發明不同半導體零部件在反應腔中的位置示意圖； 圖4是本發明在半導體零部件本體表面形成耐腐蝕塗層的製程流程圖； 圖5為本發明利用物理氣相沉積製程形成耐腐蝕塗層的裝置示意圖。1 is a schematic structural diagram of a plasma processing apparatus of the present invention; 2 is a schematic structural diagram of a semiconductor component of the present invention; Fig. 3 is the positional schematic diagram of different semiconductor components of the present invention in the reaction chamber; 4 is a process flow diagram of the present invention for forming a corrosion-resistant coating on the surface of a semiconductor component body; FIG. 5 is a schematic diagram of an apparatus for forming a corrosion-resistant coating by using a physical vapor deposition process according to the present invention.

S1:步驟S1: Step

S2:步驟S2: Step

Claims (24)

一種半導體零部件，其中，包括： 一半導體零部件本體；以及 一耐腐蝕塗層，位於該半導體零部件本體的表面，由稀土元素氟氧化物的結晶相和非晶相組成，且其中結晶相與非晶相位於同一層，非晶相瀰散在結晶相中。A semiconductor component, comprising: a semiconductor component body; and A corrosion-resistant coating, located on the surface of the semiconductor component body, is composed of a crystalline phase and an amorphous phase of rare earth oxyfluoride, wherein the crystalline phase and the amorphous phase are located in the same layer, and the amorphous phase is dispersed in the crystalline phase . 如請求項1所述的半導體零部件，其中，該耐腐蝕塗層為結晶結構。The semiconductor component according to claim 1, wherein the corrosion-resistant coating has a crystalline structure. 如請求項1所述的半導體零部件，其中，該耐腐蝕塗層稀土元素氟氧化物的稀土元素包括Y、Sc、La、Ce、Pr、Nd、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb或Lu中至少一種。The semiconductor component according to claim 1, wherein the rare earth elements of the corrosion-resistant coating rare earth element oxyfluoride include Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er At least one of , Tm, Yb or Lu. 如請求項3所述的半導體零部件，其中，同一層的結晶相與非晶相的稀土元素相同。The semiconductor component according to claim 3, wherein the crystal phase and the amorphous phase of the same layer are the same rare earth elements. 如請求項3所述的半導體零部件，其中，同一層的結晶相與非晶相的稀土元素不相同。The semiconductor component according to claim 3, wherein the rare earth elements of the crystal phase and the amorphous phase of the same layer are different. 如請求項1所述的半導體零部件，其中，該耐腐蝕塗層的厚度為0.01微米～200微米。The semiconductor component according to claim 1, wherein the corrosion-resistant coating has a thickness of 0.01 micrometers to 200 micrometers. 如請求項1所述的半導體零部件，其中，非晶相位於結晶相的表面和結晶相的本體中。The semiconductor component of claim 1, wherein the amorphous phase is located on the surface of the crystalline phase and in the bulk of the crystalline phase. 如請求項1所述的半導體零部件，其中，該半導體零部件本體的材料包括：鋁合金、碳化矽、矽、石英或陶瓷等中的至少一種。The semiconductor component according to claim 1, wherein the material of the semiconductor component body includes at least one of aluminum alloy, silicon carbide, silicon, quartz or ceramics. 如請求項1所述的半導體零部件，其中，該耐腐蝕塗層的緻密度為98%～100%。The semiconductor component according to claim 1, wherein the corrosion-resistant coating has a density of 98% to 100%. 一種等離子體處理裝置，其中，包括： 一反應腔，其內為一等離子體環境；以及 一如請求項1至請求項9任一項所述的半導體零部件，位於該反應腔內，暴露於該等離子體環境中。A plasma processing device, comprising: a reaction chamber within which is a plasma environment; and The semiconductor component according to any one of claim 1 to claim 9, located in the reaction chamber and exposed to the plasma environment. 如請求項10所述的等離子體處理裝置，其中，該等離子體環境中含有氟、氯或氧中的至少一種。The plasma processing apparatus of claim 10, wherein the plasma environment contains at least one of fluorine, chlorine or oxygen. 如請求項10所述的等離子體處理裝置，其中，該等離子體處理裝置為一等離子體蝕刻裝置或者一等離子體清潔裝置。The plasma processing apparatus of claim 10, wherein the plasma processing apparatus is a plasma etching apparatus or a plasma cleaning apparatus. 如請求項12所述的等離子體處理裝置，其中，當該等離子體蝕刻裝置為電感耦合等離子體蝕刻裝置時，該零部件包括：陶瓷板、內襯套、氣體噴嘴、氣體分配板、氣管法蘭、靜電吸盤組件、覆蓋環、聚焦環、絕緣環或等離子體約束裝置中的至少一種。The plasma processing apparatus of claim 12, wherein, when the plasma etching apparatus is an inductively coupled plasma etching apparatus, the components include: a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, a gas pipe method at least one of a blue, an electrostatic chuck assembly, a cover ring, a focus ring, an insulating ring, or a plasma confinement device. 如請求項12所述的等離子體處理裝置，其中，當該等離子體蝕刻裝置為電容耦合等離子體蝕刻裝置時，該零部件包括：噴淋頭、上接地環、移動環、氣體分配板、氣體緩衝板、靜電吸盤組件、下接地環、覆蓋環、聚焦環、絕緣環、可升降隔離環或等離子體約束裝置中的至少一種。The plasma processing apparatus according to claim 12, wherein, when the plasma etching apparatus is a capacitively coupled plasma etching apparatus, the components include: a shower head, an upper grounding ring, a moving ring, a gas distribution plate, a gas At least one of a buffer plate, an electrostatic chuck assembly, a lower ground ring, a cover ring, a focus ring, an insulating ring, a liftable isolation ring, or a plasma confinement device. 如請求項10所述的等離子體處理裝置，其中，該反應腔內還包括：一基座，用於承載一待處理基板，該待處理基板暴露於該等離子體環境中；該半導體零部件為多個，分別位於該反應腔的頂部、該反應腔的側壁以及該基座的外圍，不同位置的該半導體零部件的耐腐蝕塗層中氟含量的大小關係為：該反應腔頂部的該半導體零部件的耐腐蝕塗層中氟含量小於該反應腔側壁的該半導體零部件的耐腐蝕塗層中氟含量，且該反應腔側壁的該半導體零部件的耐腐蝕塗層中氟含量小於該基座的外圍的該半導體零部件的耐腐蝕塗層中氟含量。The plasma processing apparatus according to claim 10, wherein the reaction chamber further comprises: a base for carrying a substrate to be processed, and the substrate to be processed is exposed to the plasma environment; the semiconductor component is A plurality of them are respectively located at the top of the reaction chamber, the sidewall of the reaction chamber and the periphery of the base. The magnitude relationship of the fluorine content in the corrosion-resistant coating of the semiconductor components at different positions is: the semiconductor at the top of the reaction chamber The fluorine content in the corrosion-resistant coating of the component is less than the fluorine content in the corrosion-resistant coating of the semiconductor component on the sidewall of the reaction chamber, and the fluorine content in the corrosion-resistant coating of the semiconductor component on the sidewall of the reaction chamber is less than that of the base. The fluorine content in the corrosion-resistant coating of the semiconductor component on the periphery of the seat. 一種在半導體零部件本體上形成耐腐蝕塗層的方法，其中，包括： 提供一半導體零部件本體； 在該半導體零部件本體上形成一如請求項1至請求項9任一項中所述的耐腐蝕塗層。A method of forming a corrosion-resistant coating on a semiconductor component body, comprising: providing a semiconductor component body; A corrosion-resistant coating as described in any one of Claims 1 to 9 is formed on the semiconductor component body. 如請求項16所述的形成耐腐蝕塗層的方法，其中，該耐腐蝕塗層的形成方法包括：將該半導體零部件本體置於真空腔室內；使含稀土氟靶材和稀土含氧靶材與該半導體零部件本體相對設置；使含稀土氟靶材和稀土含氧靶材與該半導體零部件本體相對設置之後，加熱該半導體零部件本體，激發靶材形成分子流，並向真空反應腔內通入含氟、含氧製程氣體，該分子流和製程氣體在該半導體零部件本體表面形成由結晶相和非晶相組成的耐腐蝕塗層。The method for forming a corrosion-resistant coating according to claim 16, wherein the method for forming the corrosion-resistant coating comprises: placing the semiconductor component body in a vacuum chamber; After the rare earth-containing fluorine target and the rare earth oxygen-containing target are arranged opposite to the semiconductor component body, the semiconductor component body is heated to stimulate the target to form molecular flow and react to the vacuum A process gas containing fluorine and oxygen is introduced into the cavity, and the molecular flow and the process gas form a corrosion-resistant coating composed of a crystalline phase and an amorphous phase on the surface of the semiconductor component body. 如請求項17所述的形成耐腐蝕塗層的方法，其中，調整含氟、含氧製程氣體的原子比例，使含氟、含氧製程氣體的原子比例為3:7~7:3。The method for forming a corrosion-resistant coating according to claim 17, wherein the atomic ratio of the fluorine-containing and oxygen-containing process gases is adjusted so that the atomic ratio of the fluorine-containing and oxygen-containing process gases is 3:7 to 7:3. 如請求項17所述的形成耐腐蝕塗層的方法，其中，設置稀土氟靶材與稀土氧靶材之間的間距與稀土氟靶材和稀土氧靶材到該半導體零部件本體高度在1:1~1:20之間；該高度的範圍為：10厘米～2米。The method for forming a corrosion-resistant coating according to claim 17, wherein the distance between the rare-earth fluorine target and the rare-earth oxygen target is set at a height of 1 from the rare-earth fluorine target and the rare-earth oxygen target to the semiconductor component body. : between 1 and 1:20; the range of the height is: 10 cm to 2 meters. 如請求項17所述的形成耐腐蝕塗層的方法，其中，調控含氟靶材和含氧靶材的激發功率比值在1:1~1:20之間。The method for forming a corrosion-resistant coating according to claim 17, wherein the excitation power ratio of the fluorine-containing target and the oxygen-containing target is adjusted to be between 1:1 and 1:20. 如請求項16所述的形成耐腐蝕塗層的方法，其中，非晶相用於調整該耐腐蝕塗層中氟的含量。The method for forming a corrosion-resistant coating as claimed in claim 16, wherein the amorphous phase is used to adjust the content of fluorine in the corrosion-resistant coating. 如請求項16所述的形成耐腐蝕塗層的方法，其中，該耐腐蝕塗層中氟的原子百分比含量為：5%～90%。The method for forming a corrosion-resistant coating according to claim 16, wherein the atomic percent content of fluorine in the corrosion-resistant coating is 5% to 90%. 如請求項16所述的形成耐腐蝕塗層的方法，其中，該耐腐蝕塗層的形成製程包括：物理氣相沉積製程、化學氣相沉積製程和原子層沉積製程中的至少一種。The method for forming a corrosion-resistant coating according to claim 16, wherein the formation process of the corrosion-resistant coating comprises at least one of a physical vapor deposition process, a chemical vapor deposition process, and an atomic layer deposition process. 如請求項23所述的形成耐腐蝕塗層的方法，其中，還包括：利用輔助增強源對等離子體進行增強處理；該輔助增強源包括：等離子體源、離子束源、微波源和射頻源中的至少一種。The method for forming a corrosion-resistant coating according to claim 23, further comprising: using an auxiliary enhancement source to perform enhancement treatment on the plasma; the auxiliary enhancement source includes: a plasma source, an ion beam source, a microwave source and a radio frequency source at least one of them.
TW110122195A 2020-08-03 2021-06-17 Semiconductor components, plasma processing equipment and corrosion-resistant coating formation method TWI827942B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010765703.9A CN114068274A (en) 2020-08-03 2020-08-03 Semiconductor component, plasma processing apparatus, and method for forming corrosion-resistant coating
CN202010765703.9 2020-08-03

Publications (2)

Publication Number Publication Date
TW202206624A true TW202206624A (en) 2022-02-16
TWI827942B TWI827942B (en) 2024-01-01

Family

ID=80231478

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110122195A TWI827942B (en) 2020-08-03 2021-06-17 Semiconductor components, plasma processing equipment and corrosion-resistant coating formation method

Country Status (2)

Country Link
CN (1) CN114068274A (en)
TW (1) TWI827942B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115558988A (en) * 2022-11-30 2023-01-03 中微半导体设备(上海)股份有限公司 Method for forming coating, semiconductor component and plasma reaction device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3894313B2 (en) * 2002-12-19 2007-03-22 信越化学工業株式会社 Fluoride-containing film, coating member, and method for forming fluoride-containing film
US9017765B2 (en) * 2008-11-12 2015-04-28 Applied Materials, Inc. Protective coatings resistant to reactive plasma processing
US20110091700A1 (en) * 2009-10-20 2011-04-21 Saint-Gobain Ceramics & Plastics, Inc. Microelectronic processing component having a corrosion-resistant layer, microelectronic workpiece processing apparatus incorporating same, and method of forming an article having the corrosion-resistant layer
EP3283665A4 (en) * 2015-04-15 2018-12-12 Treadstone Technologies, Inc. Method of metallic component surface moodification for electrochemical applications
US11572617B2 (en) * 2016-05-03 2023-02-07 Applied Materials, Inc. Protective metal oxy-fluoride coatings
US20190078206A1 (en) * 2017-09-08 2019-03-14 Applied Materials, Inc. Fluorinated rare earth oxide ald coating for chamber productivity enhancement
US20190078199A1 (en) * 2017-09-08 2019-03-14 Applied Materials, Inc. Rare-earth-based oxyfluoride ald coating for chamber productivity enhancement
US10443126B1 (en) * 2018-04-06 2019-10-15 Applied Materials, Inc. Zone-controlled rare-earth oxide ALD and CVD coatings
CN213340283U (en) * 2020-08-03 2021-06-01 中微半导体设备(上海)股份有限公司 Semiconductor component and plasma processing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115558988A (en) * 2022-11-30 2023-01-03 中微半导体设备(上海)股份有限公司 Method for forming coating, semiconductor component and plasma reaction device
CN115558988B (en) * 2022-11-30 2023-03-24 中微半导体设备(上海)股份有限公司 Method for forming coating, semiconductor component and plasma reaction device

Also Published As

Publication number Publication date
CN114068274A (en) 2022-02-18
TWI827942B (en) 2024-01-01

Similar Documents

Publication Publication Date Title
JP4996868B2 (en) Plasma processing apparatus and plasma processing method
CN102569136B (en) The method and apparatus on clean substrate surface
US7919722B2 (en) Method for fabricating plasma reactor parts
US8293335B2 (en) Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
EP3007205B1 (en) Workpiece processing method
US20030029563A1 (en) Corrosion resistant coating for semiconductor processing chamber
US6291363B1 (en) Surface treatment of DARC films to reduce defects in subsequent cap layers
TW202022917A (en) Apparatus and process for electron beam mediated plasma etch and deposition processes
US8546273B2 (en) Methods and apparatus for forming nitrogen-containing layers
JP2001226773A (en) Treatment system and corrosion resistant member used therefor
TW200818278A (en) Fluorine plasma treatment of high-k gate stack for defect passivation
KR101957348B1 (en) Plasma processing apparatus and plasma processing method
Okumura Inductively coupled plasma sources and applications
TW201545198A (en) Inductance coupling plasma processing chamber, anti-corrosion insulation window thereof, and manufacturing method thereof
TW589926B (en) Plasma processing apparatus
TWI768367B (en) Method of making a component for use inside a plasma chamber
WO2002052628A1 (en) Plasma processing method and plasma processor
TW393683B (en) Plasma treatment method
KR20010032480A (en) Process for producing insulating film
TW202206624A (en) Semiconductor component, plasma processing apparatus, and method for forming corrosion-resistant coating The application of the semiconductor components in advanced manufacturing processes can reduce the problem of particle contamination
CN213340283U (en) Semiconductor component and plasma processing apparatus
JPH03204925A (en) Plasma processor
TW202303666A (en) Apparatus and method for forming coating, component and plasma apparatus
TWI784577B (en) Semiconductor component, composite coating forming method, and plasma reaction apparatus
CN114277340B (en) Component, method for forming plasma-resistant coating, and plasma reaction apparatus