TW202146864A - Thermistor and microbolometer based on the thermistor formed by sequentially forming a first aluminum nitride film, a vanadium oxide film, and a second aluminum nitride film on a substrate - Google Patents
Thermistor and microbolometer based on the thermistor formed by sequentially forming a first aluminum nitride film, a vanadium oxide film, and a second aluminum nitride film on a substrate Download PDFInfo
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本發明是屬於半導體技術領域,尤其有關於一種熱敏電阻及基於該熱敏電阻之微輻射熱計。The invention belongs to the technical field of semiconductors, and particularly relates to a thermistor and a microbolometer based on the thermistor.
熱敏電阻(thermistor)是一種對溫度變化極為敏感的電阻體,運用其對溫度的敏感性,已經廣泛應用於溫度測量、溫度控制、溫度補償、氣壓測定、氣象探測、過載保護等等。Thermistor is a resistor that is extremely sensitive to temperature changes. Using its sensitivity to temperature, it has been widely used in temperature measurement, temperature control, temperature compensation, barometric pressure measurement, meteorological detection, overload protection and so on.
基於熱敏電阻的微輻射熱計(Microbolometer)是近年發展非常迅速的一種紅外線探測器,其主要透過微浮橋結構來完成,基本原理是微浮橋結構的光吸收層吸收外界的紅外線輻射能量後導致溫度發生變化,從而引起熱敏電阻的電阻值產生變化,藉由偵測此變化來獲得所需的訊息。在微浮橋結構中,作為核心的熱敏電阻對於微輻射熱計的靈敏度有非常大的影響。目前最常用的熱敏電阻材料為多晶矽薄膜或過渡金屬氧化物薄膜。其中,氧化釩為過渡性金屬氧化物之一,具有較高之溫度電阻係數、較快之反應速度、較低的製程溫度和提供廣域的溫度量測範圍之優點,可符合高性能微輻射熱計之需求。但氧化釩薄膜成長條件不容易控制,且常出現電阻均勻性及熱穩定性不佳,導致輸出訊號不穩定的問題,從而影響產品性能,不利於高性能微輻射熱計之發展。The thermistor-based microbolometer is an infrared detector that has developed very rapidly in recent years. It is mainly completed through the micro-pontoon structure. The basic principle is that the light absorbing layer of the micro-pontoon structure absorbs the external infrared radiation energy. A change occurs, resulting in a change in the resistance value of the thermistor, and the required information is obtained by detecting this change. In the micro-pontoon structure, the thermistor as the core has a great influence on the sensitivity of the microbolometer. At present, the most commonly used thermistor materials are polysilicon films or transition metal oxide films. Among them, vanadium oxide is one of the transition metal oxides, which has the advantages of high temperature resistivity, fast reaction speed, low process temperature and wide temperature measurement range, which can meet the requirements of high-performance micro-radiant heat Calculate the demand. However, the growth conditions of vanadium oxide thin films are not easy to control, and the resistance uniformity and thermal stability are often poor, resulting in unstable output signals, which affects product performance and is not conducive to the development of high-performance microbolometers.
因此,上述現有技術尚有改進和發展的空間。Therefore, the above-mentioned prior art still has room for improvement and development.
有鑒於此,針對現有技術存在的缺失,本發明主要目的是提供一種熱敏電阻及基於該熱敏電阻之微輻射熱計,在基板上依序堆疊形成第一氮化鋁薄膜、氧化釩薄膜及第二氮化鋁薄膜,基於氮化鋁具有優良導熱性質可有效改善熱敏電阻均勻性及熱穩定性不佳之缺點,以符合高性能微輻射熱計之需求。In view of this, in view of the deficiencies in the prior art, the main purpose of the present invention is to provide a thermistor and a microbolometer based on the thermistor, which are sequentially stacked on a substrate to form a first aluminum nitride film, a vanadium oxide film and The second aluminum nitride film, based on the excellent thermal conductivity of aluminum nitride, can effectively improve the shortcomings of thermistor uniformity and poor thermal stability, so as to meet the needs of high-performance microbolometers.
為實現上述目的,本發明提供一種熱敏電阻,依次堆疊設置有一基板、一第一氮化鋁薄膜、一氧化釩薄膜和一第二氮化鋁薄膜。其中第一氮化鋁薄膜具有高導熱係數,並可為氧化釩薄膜之成長基礎;氧化釩薄膜作為熱敏反應層,具有較高之溫度電阻係數、較快之反應速度、較低的製程溫度和提供廣域的溫度量測範圍;而第二氮化鋁薄膜作為鈍化層,並提供導熱性、均溫性及保護作用。In order to achieve the above object, the present invention provides a thermistor, wherein a substrate, a first aluminum nitride film, a vanadium oxide film and a second aluminum nitride film are stacked in sequence. Among them, the first aluminum nitride film has high thermal conductivity and can be the growth basis of the vanadium oxide film; the vanadium oxide film, as a heat-sensitive reaction layer, has a higher temperature resistance coefficient, a faster reaction speed, and a lower process temperature And provide a wide temperature measurement range; and the second aluminum nitride film acts as a passivation layer, and provides thermal conductivity, temperature uniformity and protection.
另外,本發明也提供一種微輻射熱計,包括一微浮橋結構,微浮橋結構位於一基板上方,微浮橋結構與基板之間形成一空間隙層,並由上而下依次包括一第二氮化鋁薄膜、一氧化釩薄膜和一第一氮化鋁薄膜。其中第一氮化鋁薄膜作為微浮橋結構之支撐層,具有可承受約440 MPa應力之能力、穩定性佳之特性,並可為氧化釩薄膜之成長基礎。另外還具有高導熱係數,可提升微浮橋結構之均溫性;氧化釩薄膜作為熱敏反應層,具有較高之溫度電阻係數、較快之反應速度、較低之製程溫度及提供廣域的溫度量測範圍;而第二氮化鋁薄膜作為鈍化層,並提供導熱性及均溫性,還可吸收特定波長之紅外線能量。In addition, the present invention also provides a microbolometer, comprising a micro pontoon structure, the micro pontoon structure is located above a substrate, an air gap layer is formed between the micro pontoon structure and the substrate, and sequentially includes a second nitride layer from top to bottom Aluminum thin film, vanadium monoxide thin film and a first aluminum nitride thin film. Among them, the first aluminum nitride film is used as the support layer of the micro-floating bridge structure, which has the characteristics of being able to withstand about 440 MPa stress and good stability, and can be the growth basis of the vanadium oxide film. In addition, it also has high thermal conductivity, which can improve the temperature uniformity of the micro-floating bridge structure; as a heat-sensitive reaction layer, the vanadium oxide film has a higher temperature resistance coefficient, a faster reaction speed, a lower process temperature and provides a wide range of Temperature measurement range; while the second aluminum nitride film is used as a passivation layer to provide thermal conductivity and temperature uniformity, and can also absorb infrared energy of specific wavelengths.
相較於現有技術,本發明是將氧化釩薄膜設置於第一氮化鋁薄膜和第二氮化鋁薄膜之間,由於氮化鋁薄膜具有高的導熱係數,熱傳效率較高,可提供較佳均溫性,有助於改善熱敏電阻的電阻均勻性及熱穩定性,且用於微浮橋結構中,氮化鋁薄膜能同時提高熱敏電阻對波長在10 ~ 17μm之吸收效率,且根據輻射熱韋恩位移定律(Wein’s displacement law): λm × T=2898μm•K,本發明之氮化鋁/氧化釩/氮化鋁三層薄膜的熱敏電阻結構,可以增強高性能微輻射熱計在17 ~ - 102 ℃的溫度量測效率。Compared with the prior art, the present invention disposes the vanadium oxide film between the first aluminum nitride film and the second aluminum nitride film. Since the aluminum nitride film has high thermal conductivity and high heat transfer efficiency, it can provide Better temperature uniformity helps to improve the resistance uniformity and thermal stability of the thermistor, and in the micro-floating bridge structure, the aluminum nitride film can improve the absorption efficiency of the thermistor at the wavelength of 10 ~ 17μm at the same time. And according to Wein's displacement law of radiant heat: λ m × T=2898μm·K, the thermistor structure of the aluminum nitride/vanadium oxide/aluminum nitride three-layer film of the present invention can enhance high-performance micro-radiant heat The meter measures the efficiency at a temperature of 17 ~ - 102 ℃.
底下藉由具體實施例詳加說明,當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。The following describes in detail with specific embodiments, when it is easier to understand the purpose, technical content, characteristics and effects of the present invention.
請參照第1圖,其繪示本發明之第一實施例所提供熱敏電阻100。本實施例的熱敏電阻100是在一基板10上方形成一氮化鋁薄膜/氧化釩薄膜/氮化鋁薄膜之三層堆疊結構20,此三層堆疊結構20包括一第一氮化鋁薄膜21、一氧化釩薄膜22和一第二氮化鋁薄膜23。Please refer to FIG. 1 , which shows the
本實施例中,基板10為矽基板;實際應用上,基板10的材料可選自單晶矽、單晶鍺、二氧化鈦、氮化矽、氮化鈦、玻璃、藍寶石和金屬單質中的一種。In this embodiment, the
三層堆疊結構20之底層為第一氮化鋁薄膜21,第一氮化鋁薄膜21是作為基板10與氧化釩薄膜22之間的緩衝層(buffer layer),同時,並可作為氧化釩薄膜22之成長基礎,另外由於氮化鋁材料具有高導熱係數,可增加熱敏電阻的反應速度及均溫性。The bottom layer of the three-
三層堆疊結構20之中間層為氧化釩薄膜22,氧化釩薄膜22是作為熱敏反應層,氧化釩薄膜22的結構式為VOx,其中x為1.0 ~ 2.5,氧化釩薄膜22具有較高的溫度電阻係數(TCR)、較快的反應速度、較低的製程溫度及提供廣域的溫度量測範圍。氧化釩薄膜22可為純相的單斜晶相或四方晶相,且氧化釩薄膜22的厚度較佳為100 ~ 300 nm,氧化釩薄膜22為純氧化釩或摻雜其他元素的氧化釩。The middle layer of the three-
三層堆疊結構20之頂層為第二氮化鋁薄膜23,第二氮化鋁薄膜23是作為鈍化層,同時可提供高導熱性及均溫性,並可達到保護之用。第一氮化鋁薄膜21和第二氮化鋁薄膜23的厚度較佳為200 ~ 500 nm。The top layer of the three-
請參照第2圖,其顯示本發明之第一實施例所提供的熱敏電阻100之溫度電阻特性曲線。如圖所示,熱敏電阻的片電阻值隨著溫度上升而下降(負溫度電阻特性),呈二次多項式關係變化。本實施例中,熱敏電阻的溫度電阻特性曲線方程式可表示為y = 0.019x2
- 3.5745x + 219.05,R2
= 0.9995,y 代表熱敏電阻的片電阻值,x 代表量測溫度,R 代表溫度電阻特性曲線的曲率,熱敏電阻在25 ℃ 時的片電阻值為141.56 KΩ。Please refer to FIG. 2, which shows the temperature resistance characteristic curve of the
本實施例之熱敏電阻100的製作可以通過在基板10上依序沉積第一氮化鋁薄膜21、氧化釩薄膜22和第二氮化鋁薄膜23來達成。The
請參照第3圖,其繪示本發明之第二實施例所提供的熱敏電阻200之剖面結構示意圖。和第一實施例不同的是,本實施例之熱敏電阻200將基板10部分掏空,其製作可以通過在基板10上依序沉積第一氮化鋁薄膜21、氧化釩薄膜22和第二氮化鋁薄膜23,然後,再對於基板10背面進行蝕刻來形成多個孔洞11,而完成此孔洞式熱敏電阻200,可降低基板10熱容量,增加熱敏電阻200之熱敏感性。Please refer to FIG. 3 , which is a schematic cross-sectional structure diagram of the
請參照第4圖,其繪示本發明之第三實施例所提供的微輻射熱計300之剖面結構示意圖。和第一、第二實施例不同的是,本實施例之微輻射熱計300將上述三層堆疊結構利用2個支撐腳30來懸空設置於基板10上方,其製作可以通過在基板10上先塗覆高分子材料,再依序沉積第一氮化鋁薄膜21、氧化釩薄膜22和第二氮化鋁薄膜23,然後去除高分子材料,形成連接於三層堆疊結構20和基板10之間的支撐腳30,而完成浮橋式之微輻射熱計300。Please refer to FIG. 4 , which is a schematic cross-sectional structure diagram of the
請參照第5圖,其繪示本發明之第四實施例所提供的微輻射熱計500之剖面結構示意圖。本實施例之微輻射熱計500包括一微浮橋結構50,微浮橋結構50懸浮設置於基板10上方,且在微浮橋結構50與基板10之間形成一空間隙層60,微浮橋結構50具有一氮化鋁薄膜/氧化釩薄膜/氮化鋁薄膜之三層堆疊結構20,此三層堆疊結構20由上而下包括一第二氮化鋁薄膜23、一氧化釩薄膜22和一第一氮化鋁薄膜21。本實施例之微浮橋結構50的三層堆疊結構20在上述實施例中已經詳細說明,為了簡潔起見,在此不再贅述。同時,本技術領域的技術人員也能夠瞭解微輻射熱計500的具體結構及其變形,在此也不再贅述。Please refer to FIG. 5, which is a schematic cross-sectional structure diagram of the
進一步說明,有關本發明之熱敏電阻應用於微輻射熱計中可達到之功效。在熱敏電阻之三層堆疊結構中,底層之第一氮化鋁薄膜是作為微浮橋結構之支撐層,具有可承受約400 MPa應力之能力、穩定性佳之特性,再者並可作為氧化釩薄膜之成長基礎,另外可利用氮化鋁材料具有高導熱係數,可提升微浮橋結構之均溫性。中間層之氧化釩薄膜是作為熱敏反應層,具有較高之溫度電阻係數、較快之反應速度、較低之製程溫度及提供廣域的溫度量測範圍。而頂層之第二氮化鋁薄膜是作為鈍化層,並可提供導熱性及均溫性,以及可提高波長在10 ~ 17 μm紅外線之吸收效率。To further illustrate the effects that the thermistor of the present invention can achieve when applied to a microbolometer. In the three-layer stack structure of thermistor, the first aluminum nitride film on the bottom layer is used as the support layer of the micro-floating bridge structure, which has the ability to withstand about 400 MPa stress, good stability, and can also be used as vanadium oxide. The growth basis of the film, and aluminum nitride material can be used to have high thermal conductivity, which can improve the temperature uniformity of the micro-floating bridge structure. The vanadium oxide film in the middle layer is used as a heat sensitive reaction layer, which has a higher temperature resistance coefficient, a faster response speed, a lower process temperature and a wide temperature measurement range. The second aluminum nitride film on the top layer is used as a passivation layer, which can provide thermal conductivity and temperature uniformity, and can improve the absorption efficiency of infrared rays with a wavelength of 10 ~ 17 μm.
本發明中,氮化鋁薄膜能同時提高微輻射熱計在波長10 ~ 17μm紅外線之吸收效率,且根據輻射熱韋恩位移定律(Wein’s displacement law) : λm × T=2898μm•K,本發明之氮化鋁/氧化釩/氮化鋁三層薄膜的熱敏電阻結構,可以增強高性能微輻射熱計在17 ~ -102 ℃的溫度量測效率。In the present invention, the aluminum nitride film can simultaneously improve the absorption efficiency of the microbolometer in the infrared wavelength range of 10 ~ 17μm, and according to Wein's displacement law of radiant heat: λ m × T=2898μm·K, the nitrogen of the present invention The thermistor structure of aluminum oxide/vanadium oxide/aluminum nitride three-layer film can enhance the temperature measurement efficiency of high-performance microbolometers at 17 ~ -102 ℃.
表一 氮化鋁、氮化矽、矽的光及熱特性
再進一步說明,已知氮化矽薄膜也可作為熱敏薄膜之基底材料,本發明之熱敏電阻則是將氧化釩薄膜設置於兩層氮化鋁薄膜之間,由上面表一可得知氮化鋁薄膜相較於氮化矽薄膜所具備之優異性能如下: 1、氮化鋁薄膜有較高之導熱係數,其熱傳效率較高。 2、氮化鋁薄膜與矽基板的熱膨脹係數較氮化矽薄膜與矽基板的熱膨脹係數較為接近,氮化鋁薄膜較不易因熱應力造成脫落現象。 3、氮化矽薄膜於波長在6 ~ 12μm區間之色散現象較氮化鋁薄膜高,且在波長在11 μm出現明顯色散現象,不利頻譜偵測。 4、對熱偵測器而言,使用氮化鋁薄膜的導熱效率(反應速度)及提供氧化釩薄膜在波長10 ~ 17μm之光吸收效率上均優於氮化矽薄膜。To further illustrate, it is known that the silicon nitride film can also be used as the base material of the thermal film, the thermistor of the present invention is to set the vanadium oxide film between the two aluminum nitride films, as can be seen from the above Table 1 The excellent properties of aluminum nitride films compared to silicon nitride films are as follows: 1. The aluminum nitride film has a high thermal conductivity, and its heat transfer efficiency is high. 2. The thermal expansion coefficient of the aluminum nitride film and the silicon substrate is closer to that of the silicon nitride film and the silicon substrate, and the aluminum nitride film is less likely to fall off due to thermal stress. 3. The dispersion phenomenon of silicon nitride film in the wavelength range of 6 ~ 12μm is higher than that of aluminum nitride film, and obvious dispersion phenomenon occurs in the wavelength of 11 μm, which is not conducive to spectrum detection. 4. For thermal detectors, the thermal conductivity (reaction speed) of the aluminum nitride film and the light absorption efficiency of the vanadium oxide film at a wavelength of 10 ~ 17μm are better than those of the silicon nitride film.
必須注意的是,本發明之熱敏電阻的三層堆疊結構中,底層之第一氮化鋁薄膜必須以不影響其他膜層之最低溫度及氧化釩之電性條件為限,而頂層之第二氮化鋁薄膜的製程溫度必須以不影響氧化釩薄膜特性為限。氧化釩薄膜為熱反應層,可呈現較高之溫度電阻係數。It must be noted that, in the three-layer stack structure of the thermistor of the present invention, the first aluminum nitride film on the bottom layer must be limited to the minimum temperature and the electrical properties of vanadium oxide that do not affect other film layers, and the first aluminum nitride film on the top layer must be limited. The process temperature of the aluminum nitride film must not affect the characteristics of the vanadium oxide film. The vanadium oxide film is a thermally reactive layer, which can exhibit a higher temperature resistivity.
綜上所述,根據本發明所提供的熱敏電阻及基於該熱敏電阻之微輻射熱計,熱敏電阻是在基板上方形成有氮化鋁薄膜/氧化釩薄膜/氮化鋁薄膜之三層堆疊結構,有助於改善熱敏電阻的輻射熱偵測度、電阻均勻性及熱穩定性,此三層堆疊結構進一步可應用於微輻射熱計之微浮橋結構中,可提昇溫度均勻性和特定波長之光吸收效率,能夠滿足高性能微輻射熱計的需求,進而可提高產品價值和產業競爭力。To sum up, according to the thermistor and the microbolometer based on the thermistor provided by the present invention, the thermistor is formed on the substrate with three layers of aluminum nitride film/vanadium oxide film/aluminum nitride film The stacked structure helps to improve the radiant heat detection, resistance uniformity and thermal stability of the thermistor. This three-layer stacked structure can be further applied to the micro-floating bridge structure of the microbolometer, which can improve the temperature uniformity and specific wavelength. The high light absorption efficiency can meet the needs of high-performance microbolometers, thereby improving product value and industrial competitiveness.
以上所述,僅為本發明的具體實施方式,但本發明的保護範圍並不局限於此,任何熟悉本技術領域的技術人員在本發明揭露的技術範圍內,可輕易想到其各種變化或替換,這些都應涵蓋在本發明的保護範圍之內。因此,本發明的保護範圍應以所述請求項的保護範圍為準。The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited to this. Any person skilled in the art can easily think of various changes or replacements thereof within the technical scope disclosed by the present invention. , these should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
100、200:熱敏電阻
10:基板
11:孔洞
20:三層堆疊結構
21:第一氮化鋁薄膜
22:氧化釩薄膜
23:第二氮化鋁薄膜
30:支撐腳
300、500:微輻射熱計
50:微浮橋結構
60:空間隙層100, 200: thermistor
10: Substrate
11: Holes
20: Three-layer stacked structure
21: The first aluminum nitride film
22: Vanadium oxide film
23: The second aluminum nitride film
30:
第1圖是本發明之第一實施例所提供的熱敏電阻之剖面結構示意圖。 第2圖是本發明之第一實施例所提供的熱敏電阻之溫度電阻特性曲線。 第3圖是本發明之第二實施例所提供的熱敏電阻之剖面結構示意圖。 第4圖是本發明之第三實施例所提供的微輻射熱計之剖面結構示意圖。 第5圖是本發明之第四實施例所提供的微輻射熱計之剖面結構示意圖。FIG. 1 is a schematic cross-sectional structure diagram of the thermistor provided by the first embodiment of the present invention. FIG. 2 is a temperature resistance characteristic curve of the thermistor provided by the first embodiment of the present invention. FIG. 3 is a schematic cross-sectional structure diagram of the thermistor provided by the second embodiment of the present invention. FIG. 4 is a schematic cross-sectional structure diagram of the microbolometer provided by the third embodiment of the present invention. FIG. 5 is a schematic cross-sectional structure diagram of the microbolometer provided by the fourth embodiment of the present invention.
100:熱敏電阻100: Thermistor
10:基板10: Substrate
20:三層堆疊結構20: Three-layer stacked structure
21:第一氮化鋁薄膜21: The first aluminum nitride film
22:氧化釩薄膜22: Vanadium oxide film
23:第二氮化鋁薄膜23: The second aluminum nitride film
Claims (12)
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CN114319071A (en) * | 2022-02-25 | 2022-04-12 | 鸿海精密工业股份有限公司 | Floating bridge structure and infrared sensing device |
TWI809689B (en) * | 2022-01-27 | 2023-07-21 | 鴻海精密工業股份有限公司 | Microbolometer and method of manufacturing the same |
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CN102426060B (en) * | 2011-08-26 | 2013-04-10 | 电子科技大学 | Terahertz or infrared micro-bolometer and manufacturing method thereof |
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