CN112729567A - Novel infrared thermopile sensor chip and preparation method - Google Patents
Novel infrared thermopile sensor chip and preparation method Download PDFInfo
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- CN112729567A CN112729567A CN202011472852.2A CN202011472852A CN112729567A CN 112729567 A CN112729567 A CN 112729567A CN 202011472852 A CN202011472852 A CN 202011472852A CN 112729567 A CN112729567 A CN 112729567A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 18
- 238000005566 electron beam evaporation Methods 0.000 claims description 18
- 238000002207 thermal evaporation Methods 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 238000005137 deposition process Methods 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 2
- 239000005751 Copper oxide Substances 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- 229910018553 Ni—O Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- KFDQGLPGKXUTMZ-UHFFFAOYSA-N [Mn].[Co].[Ni] Chemical compound [Mn].[Co].[Ni] KFDQGLPGKXUTMZ-UHFFFAOYSA-N 0.000 claims description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 2
- 229910000431 copper oxide Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 2
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 230000008859 change Effects 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 12
- 238000009529 body temperature measurement Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 210000001061 forehead Anatomy 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
The invention belongs to the field of infrared detection, and relates to a novel infrared thermopile sensor chip and a preparation method thereof. The invention integrates the thermopile and the thermistor on a chip, and the thermistor is tightly attached to the thermopile cold junction and distributed around the silicon substrate. When the temperature of the sensor is influenced by the outside to change rapidly and the cold and hot ends of the chip of the thermopile of the sensor are unbalanced thermally, the thermistor is tightly attached to the cold junction of the thermopile, so that the temperature of the cold junction of the thermopile can be read accurately and without delay through the thermistor, and the stability of the temperature test of the infrared thermopile is improved. Meanwhile, compared with the traditional thermistor and thermopile, the integrated chip can reduce the packaging difficulty, reduce the size of the sensor and reduce the cost.
Description
Technical Field
The invention belongs to the field of infrared detection, and relates to a novel infrared thermopile sensor chip and a preparation method thereof.
Background
The infrared thermopile sensor has the advantages of small volume, low cost, high stability and good compatibility with a silicon semiconductor process, so that the infrared thermopile sensor is widely applied to the fields of non-contact infrared temperature measurement (an ear thermometer, a forehead thermometer and the like), intelligent household appliances, industrial temperature measurement and control, fire fighting and the like. A complete infrared thermopile sensor would include: thermopile chip, infrared filter, high-precision thermistor. The thermopile chip is a core component of an infrared thermopile sensor, and generates an electric charge in response to infrared radiation. The thermopile chip is a closed loop (namely a pair of thermocouples) constructed by mutually connecting two semiconductor materials with different work functions in series based on a Seebeck effect mechanism, wherein the end with higher temperature in the two series joints is generally called as a hot junction, the end with lower temperature is called as a cold junction, carriers in the materials move along the direction of reducing temperature gradient to cause charge accumulation at the cold junction, at the moment, thermoelectric force is generated in the loop, and a plurality of pairs of thermocouples are mutually connected in series to be combined into a thermopile. The infrared filter is spectrally selective transparent depending on the application. The high-precision thermistor is mainly used for compensating the ambient temperature. The thermistor and the thermopile chip of traditional infrared thermopile sensor are mutually independent, because there is the thermodynamic difference in radiation, convection current and three kinds of heat transfer modes of conduction, when the sensor temperature receives external influence to take place the rapid change, the hot unbalance can take place for sensor thermopile chip cold and hot end, and overshoot phenomenon appears in output voltage, is unfavorable for non-contact temperature to measure stability and the accuracy of using.
Disclosure of Invention
The invention aims to provide a novel infrared thermopile sensor chip to solve the problems that when the temperature of a traditional infrared thermopile sensor is rapidly changed under the influence of the outside, the cold end and the hot end of the sensor thermopile chip are thermally unbalanced, the output voltage overshoots, and the stability and the accuracy of non-contact temperature measurement application are not facilitated.
The technical scheme of the invention is as follows: the utility model provides a novel infrared thermopile sensor chip, includes the silicon substrate, is equipped with the cavity on the silicon substrate, is equipped with the supporting layer above the cavity and links to each other with the silicon substrate around the cavity be equipped with the thermopile layer on the supporting layer. The thermoelectric stack layer comprises from inside to outside: hot cells, thermopile hot junctions, thermopile arms, and thermopile cold junctions. The heat sink is located in the center of the support layer above the cavity for absorbing infrared radiation. The thermopile hot junction is located on the supporting layer above the cavity and distributed around the heat cell, the thermopile arm extends from inside to outside to be connected with the thermopile hot junction and the thermopile cold junction located on the supporting layer around the silicon substrate, and the periphery of the thermopile cold junction is provided with a thermistor.
The thermopile arm is composed of aluminum/n-type polycrystalline silicon (Al/n-poly Si), aluminum/p-type polycrystalline silicon (Al/p-poly Si), or p/n-type polycrystalline silicon (p/n-poly Si).
And a cavity is arranged on the silicon substrate, penetrates from the bottom of the silicon substrate to the supporting layer or is positioned below the supporting layer but does not penetrate through the silicon substrate.
The thermistor is tightly attached to the thermopile cold junction, and the thermistor and the thermopile are integrated on one chip and are positioned on the periphery of the silicon substrate; the thermistor material is one or a combination of polysilicon, platinum, nickel-chromium alloy, barium titanate, nickel oxide, manganese oxide, cobalt oxide, copper oxide, vanadium oxide and manganese-cobalt-nickel alloy.
The supporting layer is made of SiO from bottom to top2Layer, Si3N4Layer and SiO2And (3) layer composition.
The invention integrates the thermopile and the thermistor on a chip, and the thermistor is tightly attached to the thermopile cold junction and distributed around the silicon substrate. When the temperature of the sensor is influenced by the outside to change rapidly and the cold and hot ends of the chip of the thermopile of the sensor are unbalanced thermally, the thermistor is tightly attached to the cold junction of the thermopile, so that the temperature of the cold junction of the thermopile can be read accurately and without delay through the thermistor, and the stability of the temperature test of the infrared thermopile is improved. Meanwhile, compared with the traditional thermistor and thermopile, the integrated chip can reduce the packaging difficulty, reduce the size of the sensor and reduce the cost.
Drawings
FIG. 1 is a block diagram of a novel infrared thermopile sensor chip.
Detailed Description
The principles and features of this invention are described below in conjunction with examples which are set forth to illustrate, but are not to be construed to limit the scope of the invention.
Example 1
In the novel infrared thermopile sensor chip disclosed in embodiment 1 of the present invention, a thermopile and a thermistor are integrated on one chip, and the thermistor is tightly attached to a thermopile cold junction and distributed around a silicon substrate. Even when the temperature of the sensor is rapidly changed under the influence of the outside, the cold and hot ends of the chip of the thermopile of the sensor generate thermal unbalance, the temperature of the cold and hot ends of the thermopile can be accurately read through the thermistor without delay, and therefore the stability and the accuracy of the non-contact temperature measurement application of the sensor are improved.
The novel infrared thermopile sensor chip preparation process comprises the following steps:
step 1: depositing a layer of SiO on a silicon substrate by using a chemical vapor deposition (PECVD), electron beam evaporation, thermal evaporation or magnetron sputtering and other film processes2The support layer 1.1 is formed.
Step 2: depositing a layer of Si on the supporting layer 1.1 by using a thin film process such as chemical vapor deposition (PECVD), electron beam evaporation, thermal evaporation or magnetron sputtering3N4The support layer 1.2 is formed.
And step 3: depositing a layer of SiO on the supporting layer 1.2 by using a thin film process such as chemical vapor deposition (PECVD), electron beam evaporation, thermal evaporation or magnetron sputtering and the like2Forming the support layer 1.3.
The support layers 1.1, 1.2, 1.3 form a complete support layer.
And 4, step 4: and preparing a third part of thermopile on the supporting layer by utilizing a chemical vapor deposition (PECVD), electron beam evaporation, thermal evaporation, magnetron sputtering or other film deposition process and a Reactive Ion Etching (RIE) film etching process.
And 5: depositing a layer of SiO on the thermopile by using chemical vapor deposition (PECVD), electron beam evaporation, thermal evaporation or magnetron sputtering and other film deposition processes2An insulating layer 1 is formed.
Step 6: and depositing a layer of platinum metal on the insulating layer by using a magnetron sputtering method, and etching according to the layout to obtain the thermosensitive film resistor tightly attached to the thermopile cold junction.
And 7: on the thermistor, chemical vapor deposition (PECVD) and electron beam evaporation are utilizedDepositing a layer of SiO by film deposition processes such as thermal evaporation or magnetron sputtering2An insulating layer 2 is formed.
And 8: and etching the silicon substrate by using a chemical wet etching method on the back surface of the silicon substrate to form a micro heat insulation cavity, namely a cavity.
Example 2
In the novel infrared thermopile sensor chip disclosed in embodiment 1 of the present invention, a thermopile and a thermistor are integrated on one chip, and the thermistor is tightly attached to a thermopile cold junction and distributed around a silicon substrate. Even when the temperature of the sensor is rapidly changed under the influence of the outside, the cold and hot ends of the chip of the thermopile of the sensor generate thermal unbalance, the temperature of the cold and hot ends of the thermopile can be accurately read through the thermistor without delay, and therefore the stability and the accuracy of the non-contact temperature measurement application of the sensor are improved.
The novel infrared thermopile sensor chip preparation process comprises the following steps:
step 1: depositing a layer of SiO on a silicon substrate by using a chemical vapor deposition (PECVD), electron beam evaporation, thermal evaporation or magnetron sputtering and other film processes2The support layer 1.1 is formed.
Step 2: depositing a layer of Si on the supporting layer 1.1 by using a thin film process such as chemical vapor deposition (PECVD), electron beam evaporation, thermal evaporation or magnetron sputtering3N4The support layer 1.2 is formed.
And step 3: depositing a layer of SiO on the supporting layer 1.2 by using a thin film process such as chemical vapor deposition (PECVD), electron beam evaporation, thermal evaporation or magnetron sputtering and the like2Forming the support layer 1.3.
The support layers 1.1, 1.2, 1.3 form a complete support layer.
And 4, step 4: and preparing a third part of thermopile on the supporting layer by utilizing a chemical vapor deposition (PECVD), electron beam evaporation, thermal evaporation, magnetron sputtering or other film deposition process and a Reactive Ion Etching (RIE) film etching process.
And 5: depositing a layer of SiO on the thermopile by using chemical vapor deposition (PECVD), electron beam evaporation, thermal evaporation or magnetron sputtering and other film deposition processes2An insulating layer 1 is formed.
Step 6: and depositing a layer of Mn-Co-Ni-O alloy film on the insulating layer by using a magnetron sputtering method, and etching according to the layout to obtain the thermosensitive film resistor tightly attached to the thermopile cold junction.
And 7: depositing a layer of SiO on the thermistor by using a thin film deposition process such as chemical vapor deposition (PECVD), electron beam evaporation, thermal evaporation or magnetron sputtering2An insulating layer 2 is formed.
And 8: and etching the silicon substrate by using a dry etching method on the front side of the silicon substrate to form a micro heat insulation cavity, namely a cavity.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (6)
1. A novel infrared thermopile sensor chip comprises a silicon substrate, wherein a cavity is formed in the silicon substrate, a supporting layer is arranged above the cavity and connected with the silicon substrate around the cavity, and a thermopile layer is arranged on the supporting layer; the thermoelectric stack layer comprises from inside to outside: a hot cell, a thermopile hot junction, a thermopile arm, and a thermopile cold junction; the heat pool is positioned in the center of the supporting layer above the cavity and used for absorbing infrared radiation; the thermopile hot junction is located on the supporting layer above the cavity and distributed around the heat cell, and the thermopile arm extends from inside to outside to connect the thermopile hot junction and the thermopile cold junction located on the supporting layer around the silicon substrate.
2. The novel infrared thermopile sensor chip of claim 1, wherein said thermopile arm is comprised of aluminum/n-type polysilicon (Al/n-poly Si), aluminum/p-type polysilicon (Al/p-poly Si), or p/n-type polysilicon (p/n-poly Si).
3. The novel infrared thermopile sensor chip of claim 1, wherein the silicon substrate has a cavity extending from the bottom of the silicon substrate to the support layer or below the support layer but not through the silicon substrate.
4. The novel infrared thermopile sensor chip of claim 1, wherein the thermistor is tightly attached to the thermopile cold junction, integrated with the thermopile on a single chip, and located around the silicon substrate; the thermistor material is one or a combination of polysilicon, platinum, nickel-chromium alloy, barium titanate, nickel oxide, manganese oxide, cobalt oxide, copper oxide, vanadium oxide and manganese-cobalt-nickel alloy.
5. The novel infrared thermopile sensor chip of claim 1, wherein said support layer is comprised of bottom-up SiO2Layer, Si3N4Layer and SiO2And (3) layer composition.
6. The preparation method of the novel infrared thermopile sensor chip according to claim 1, characterized by comprising the following steps:
step 1: depositing a layer of SiO on the silicon substrate by chemical vapor deposition, electron beam evaporation, thermal evaporation or magnetron sputtering film process2Forming a supporting layer 1.1;
step 2: depositing a layer of Si on the supporting layer 1.1 by using chemical vapor deposition, electron beam evaporation, thermal evaporation or magnetron sputtering film process3N4Forming a supporting layer 1.2;
and step 3: depositing a layer of SiO on the supporting layer 1.2 by using chemical vapor deposition, electron beam evaporation, thermal evaporation or magnetron sputtering film process2Forming a supporting layer 1.3;the supporting layers 1.1, 1.2 and 1.3 form a complete supporting layer;
and 4, step 4: preparing a third part of thermopile on the supporting layer by utilizing a chemical vapor deposition, electron beam evaporation, thermal evaporation, magnetron sputtering or other film deposition process and a Reactive Ion Etching (RIE) film etching process;
and 5: depositing a layer of SiO on the thermopile by chemical vapor deposition, electron beam evaporation, thermal evaporation or magnetron sputtering film deposition2Forming an insulating layer 1;
step 6: depositing a layer of platinum metal or a layer of Mn-Co-Ni-O alloy film on the insulating layer by using a magnetron sputtering method, and etching according to the layout to obtain a thermosensitive film resistor tightly attached to the thermopile cold junction;
and 7: depositing a layer of SiO on the thermistor by using the film deposition process of chemical vapor deposition, electron beam evaporation, thermal evaporation or magnetron sputtering and the like2Forming an insulating layer 2;
and 8: and etching the silicon substrate by using a chemical wet etching method on the back surface of the silicon substrate to form a micro heat insulation cavity, namely a cavity.
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| CN202011472852.2A CN112729567A (en) | 2020-12-15 | 2020-12-15 | Novel infrared thermopile sensor chip and preparation method |
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| CN202011472852.2A CN112729567A (en) | 2020-12-15 | 2020-12-15 | Novel infrared thermopile sensor chip and preparation method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023103259A1 (en) * | 2021-12-10 | 2023-06-15 | 佛山市川东磁电股份有限公司 | Seebeck coefficient measurement structure suitable for thermopile, and manufacturing method therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN2397608Y (en) * | 1999-05-05 | 2000-09-20 | 中国科学院上海冶金研究所 | Silicon-metal double-layer struction film thermopile |
| US20020037026A1 (en) * | 2000-06-06 | 2002-03-28 | Shigemi Sato | Infrared sensing element and temperature measuring device |
| CN106872051A (en) * | 2017-02-23 | 2017-06-20 | 深圳市美思先端电子有限公司 | A kind of human body infrared induction installation |
| CN211602189U (en) * | 2020-04-07 | 2020-09-29 | 众智光电科技股份有限公司 | Infrared temperature sensor |
| CN112067145A (en) * | 2020-09-07 | 2020-12-11 | 中微龙图电子科技无锡有限责任公司 | Infrared thermopile sensor integrated with thermistor and preparation method |
-
2020
- 2020-12-15 CN CN202011472852.2A patent/CN112729567A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2397608Y (en) * | 1999-05-05 | 2000-09-20 | 中国科学院上海冶金研究所 | Silicon-metal double-layer struction film thermopile |
| US20020037026A1 (en) * | 2000-06-06 | 2002-03-28 | Shigemi Sato | Infrared sensing element and temperature measuring device |
| CN106872051A (en) * | 2017-02-23 | 2017-06-20 | 深圳市美思先端电子有限公司 | A kind of human body infrared induction installation |
| CN211602189U (en) * | 2020-04-07 | 2020-09-29 | 众智光电科技股份有限公司 | Infrared temperature sensor |
| CN112067145A (en) * | 2020-09-07 | 2020-12-11 | 中微龙图电子科技无锡有限责任公司 | Infrared thermopile sensor integrated with thermistor and preparation method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023103259A1 (en) * | 2021-12-10 | 2023-06-15 | 佛山市川东磁电股份有限公司 | Seebeck coefficient measurement structure suitable for thermopile, and manufacturing method therefor |
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Application publication date: 20210430 |