TW202142523A - 銅/陶瓷接合體、及絕緣電路基板 - Google Patents
銅/陶瓷接合體、及絕緣電路基板 Download PDFInfo
- Publication number
- TW202142523A TW202142523A TW109143441A TW109143441A TW202142523A TW 202142523 A TW202142523 A TW 202142523A TW 109143441 A TW109143441 A TW 109143441A TW 109143441 A TW109143441 A TW 109143441A TW 202142523 A TW202142523 A TW 202142523A
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- Prior art keywords
- copper
- ceramic
- active metal
- metal compound
- layer
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- 239000010949 copper Substances 0.000 title claims abstract description 146
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 145
- 239000000919 ceramic Substances 0.000 title claims abstract description 141
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 128
- 238000007373 indentation Methods 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 14
- 238000005304 joining Methods 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 99
- 229910052751 metal Inorganic materials 0.000 claims description 60
- 239000002184 metal Substances 0.000 claims description 60
- 150000002736 metal compounds Chemical class 0.000 claims description 54
- 229910052709 silver Inorganic materials 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 15
- 239000011817 metal compound particle Substances 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 description 28
- 229910000679 solder Inorganic materials 0.000 description 21
- 239000000463 material Substances 0.000 description 20
- 238000001816 cooling Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 16
- 239000010936 titanium Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 9
- 229910017945 Cu—Ti Inorganic materials 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 230000005496 eutectics Effects 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 6
- 229910017944 Ag—Cu Inorganic materials 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000724 energy-dispersive X-ray spectrum Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- 229910020836 Sn-Ag Inorganic materials 0.000 description 2
- 229910020988 Sn—Ag Inorganic materials 0.000 description 2
- 229910018956 Sn—In Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007541 indentation hardness test Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
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- B32—LAYERED PRODUCTS
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Abstract
本發明係接合銅或銅合金所成銅構件、和含矽陶瓷所成陶瓷構件而成的銅/陶瓷接合體中,從前述銅構件與前述陶瓷構件之接合界面至前述銅構件側10μm至50μm之領域之最大壓入硬度為70mgf/μm2
以上150mgf/μm2
以下之範圍內。
Description
此發明係有關接合銅或銅合金所成銅構件、和含矽陶瓷所成陶瓷構件而成之銅/陶瓷接合體、於含矽陶瓷所成陶瓷基板之表面,接合銅或銅合金所成銅板而成之絕緣電路基板。
本發明係根據於2019年12月19日,日本申請之日本特願2019-228780號及於2020年11月26日,日本申請之日本特願2020-196300號主張優先權,將此內容援用於此。
於功率模組、LED模組及熱電模組中,於絕緣層之一方之面,形成導電材料所成之電路層的絕緣電路基板,成為接合功率半導體元件、LED元件及熱電元件之構造。
例如為控制風力發電、電動車、油電混合車等所使用之大電力控制用之功率半導體元件係由於動作時之發熱量多之故,做為搭載此之基板,具備陶瓷基板、和於此陶瓷基板之一方之面,接合導電性優異之金屬板而形成電路層的絕緣電路基板,則在於以往被廣為利用。然而,做為絕緣電路基板,亦有提供於陶瓷基板之另一方的面,接合金屬板形成金屬層者。
例如,於專利文獻1中,提案有將構成電路層及金屬層之第一之金屬板及第二之金屬板做為銅板,將此銅板經由DBC法,直接接合於陶瓷基板之功率模組用基板。於此DBC法中,利用銅與銅氧化物之共晶反應,經由在於銅板與陶瓷基板界面,產生液相,接合銅板與陶瓷基板。
又,於專利文獻2中,提案有經由於陶瓷基板之一方的面及另一方的面,接合銅板,形成電路層及金屬層的絕緣電路基板。於此專利文獻1中,於陶瓷基板之一方的面及另一方的面,隔著Ag-Cu-Ti系銲材,配置銅板,經由進行加熱處理,接合銅板(所謂活性金屬硬焊法)。此活性金屬硬焊法中,使用活性金屬之含有Ti之銲材之故,可提升熔融之銲材與陶瓷基板之溼濡性,可良好接合陶瓷基板與銅板。
更且,專利文獻3中,提案有銅或銅合金所成銅板、和氮化矽所成陶瓷基板,使用含Ag及Ti之接合材接合之功率模組用基板中,於接合界面,形成氮化化合物層與Ag-Cu共晶層,氮化化合物層之厚度為0.15μm以上1.0μm以下之範圍內。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開平04-162756號公報
[專利文獻2]日本特許第3211856號公報
[專利文獻3]日本特開2018-008869號公報
[發明欲解決之課題]
但是,如專利文獻1所揭示,經由DBC法接合陶瓷基板與銅板之時,需要將接合溫度成為1065℃以上(銅與銅氧化物之共晶點溫度以上)之故,於接合時,陶瓷基板會有劣化之疑慮。
又,如專利文獻2所揭示,經由活性金屬硬焊法接合陶瓷基板與銅板之時,接合溫度為900℃之較高溫之故,陶瓷基板仍然會有劣化之問題。
在此,專利文獻3中,銅或銅合金所成銅板、和氮化矽所成陶瓷基板,使用含Ag及Ti之接合材加以接合,可以較低溫之條件接合陶瓷構件與銅構件之故,可抑制接合時陶瓷構件之劣化。
然而,最近,由於絕緣電路基板之用途,較以往而言更需增加承受嚴酷冷熱周期之情形。
為此,要求即使負荷較以往嚴酷冷熱周期之用途下,接合強度高,且冷熱周期負荷時,不產生龜裂於陶瓷基板之絕緣電路基板。
此發明係有鑑於上述情事而成,提供接合強度高,且冷熱周期可靠性(陶瓷基板難以破裂)尤其優異之銅/陶瓷接合體、及絕緣電路基板為目的。
[為解決課題之手段]
為解決前述之課題,本發明之銅/陶瓷接合體係接合銅或銅合金所成銅構件、和含矽陶瓷所成陶瓷構件而成的銅/陶瓷接合體中,從前述銅構件與前述陶瓷構件之接合界面至前述銅構件側10μm至50μm之領域之最大壓入硬度為70mgf/μm2
以上150mgf/μm2
以下之範圍內為特徵。
根據本發明之銅/陶瓷接合體時,從前述銅構件與前述陶瓷構件之接合界面,向前述銅構件側10μm至50μm之領域之最大壓入硬度為70mgf/μm2
以上之故,接合界面附近之銅則充分熔融,產生液相,強固接合陶瓷構件與銅構件。
另一方面,前述領域之最大壓入硬度抑制在150 mgf/μm2
以下之故,接合界面附近不會過硬,抑制冷熱周期負荷時之龜裂之產生。
因此,可得接合強度高,且在冷熱周期可靠性尤其優異之銅/陶瓷接合體。
在此,於本發明之銅/陶瓷接合體中,前述銅構件與前述陶瓷構件之接合界面,於前述陶瓷構件側,形成含有選自Ti、Zr、Nb、Hf之1種或2種以上之活性金屬之化合物的活性金屬化合物層,前述活性金屬化合物層之前述活性金屬化合物粒子之最大粒子徑為180nm以下為佳。
此時,於前述活性金屬化合物層中,增加相對硬度低之粒界領域(金屬相)所佔之比例,提升前述活性金屬化合物層之耐衝擊性。由此,例如於前述銅構件,超音波接合端子材之時,可抑制前述活性金屬化合物層之龜裂之產生,銅構件與陶瓷構件之剝離,或抑制陶瓷構件之龜裂之產生。
又,本發明之銅/陶瓷接合體中,於前述活性金屬化合物層之內部,存在Si、Cu、Ag為佳。
此時,於前述活性金屬化合物層內,存在Si、Cu、Ag之故,伴隨可抑制前述活性金屬化合物層之龜裂之產生,於前述銅構件與前述陶瓷構件之接合界面不產生未反應部,更且可得接合強度高之銅/陶瓷接合體。
本發明之絕緣電路基板係於含矽陶瓷所成陶瓷基板之表面,接合銅或銅合金所成銅板而成之絕緣電路基板中,從前述銅板與前述陶瓷基板之接合界面至前述銅構件側10μm至50μm之領域之最大壓入硬度為70mgf/μm2
以上150mgf/μm2
以下之範圍內為特徵。
根據本發明之絕緣電路基板時,從前述銅板與前述陶瓷基板之接合界面至前述銅板側10μm至50μm之領域之最大壓入硬度為70mgf/μm2
以上之故,接合界面附近之銅則充分熔融,產生液相,強固接合陶瓷基板與銅板。
另一方面,前述領域之最大壓入硬度抑制在150 mgf/μm2
以下之故,接合界面附近不會過硬,抑制冷熱周期負荷時之龜裂之產生。
因此,可得接合強度高,且在冷熱周期可靠性尤其優異之絕緣電路基板。
在此,於本發明之絕緣電路基板中,前述銅板與前述陶瓷基板之接合界面中,於前述陶瓷基板側,形成含有選自Ti、Zr、Nb、Hf之1種或2種以上之活性金屬之化合物的活性金屬化合物層,前述活性金屬化合物層之前述活性金屬化合物粒子之最大粒子徑為180nm以下為佳。
此時,於前述活性金屬化合物層中,增加相對硬度低之粒界領域(金屬相)所佔之比例,提升前述活性金屬化合物層之耐衝擊性。由此,例如於前述銅板,超音波接合端子材之時,可抑制前述活性金屬化合物層之龜裂之產生,銅板與陶瓷基板之剝離,或抑制陶瓷基板之龜裂之產生。
又,本發明之絕緣電路基板中,於前述活性金屬化合物層內,存在Si、Cu、Ag為佳。
此時,於前述活性金屬化合物層內,存在Si、Cu、Ag之故,伴隨可抑制前述活性金屬化合物層之龜裂之產生,於前述銅板與前述陶瓷基板之接合界面不產生未反應部,更且可得接合強度高之絕緣電路基板。
[發明效果]
根據本發明時,可提供接合強度高,且在冷熱周期可靠性尤其優異之銅/陶瓷接合體,及絕緣電路基板。
以下,對於本發明之實施形態,參照附件圖面加以說明。
關於本實施形態之銅/陶瓷接合體係接合做為陶瓷所成陶瓷構件的陶瓷基板11、和做為銅或銅合金所成銅構件之銅板22(電路層12)及銅板23(金屬層13)而成的絕緣電路基板10。於圖1,顯示具備本實施形態之絕緣電路基板10之功率模組1。
此功率模組1係具備配設電路層12及金屬層13之絕緣電路基板10、和於電路層12之一方的面(圖1中之上面),隔著接合層2加以接合之半導體元件3、和配置於金屬層13之另一方側(圖1中之下側)之散熱片30。
半導體元件3係以Si等之半導體材料構成。此半導體元件3與電路層12係隔著接合層2加以接合。
接合層2係例如以Sn-Ag系、Sn-In系、或Sn-Ag-Cu系之銲錫材所構成。
散熱片30係發散來自前述之絕緣電路基板10之熱者。此散熱片30係銅或銅合金所構成,本實施形態中,係以磷脫氧銅所構成。於此散熱片30中,設有為流動冷卻用之流體之流路31。
然而,於本實施形態中,散熱片30與金屬層13則經由銲錫材所成銲錫層32加以接合。此銲錫層32係例如以Sn-Ag系、Sn-In系、或Sn-Ag-Cu系之銲錫材所構成。
然後,本實施形態之絕緣電路基板10係如圖1所示,具備陶瓷基板11、和配設於此陶瓷基板11之一方的面(圖1中之上面)的電路層12,和配設於陶瓷基板11之另一方面(圖1中之下面)之金屬層13。
陶瓷基板11係以絕緣性及散熱性優異之含矽陶瓷所構成,本實施形態中,以氮化矽(Si3
N4
)加以構成。此陶瓷基板11之厚度係例如設定於0.2mm以上1.5mm以下之範圍內,本實施形態中,設定在0.32mm。
電路層12係如圖6示,此陶瓷基板11之一方之面(圖6之上面),經由接合銅或銅合金所成銅板22加以形成。
本實施形態中,電路層12係使無氧銅之軋板所成銅板22,接合於陶瓷基板11加以形成。
然而,成為電路層12之銅板22之厚度係例如設定於0.1mm以上2.0mm以下之範圍內,本實施形態中,設定在0.6mm。
金屬層13係如圖6示,於陶瓷基板11之另一方之面(圖6之下面),經由接合銅或銅合金所成銅板23加以形成。
本實施形態中,金屬層13係使無氧銅之軋板所成銅板23,接合於陶瓷基板11加以形成。
然而,成為金屬層13之銅板23之厚度係設定於0.1mm以上2.0mm以下之範圍內,本實施形態中,設定在0.6mm。
然後,於陶瓷基板11與電路層12(金屬層13)之接合界面,如圖2所示,形成含有選自Ti、Zr、Nb、Hf之1種或2種以上之活性金屬之化合物的活性金屬化合物層41。
此活性金屬化合物層41係經由使含於接合材之活性金屬與陶瓷基板11進行反應而形成。
本實施形態中,做為活性金屬使用Ti,陶瓷基板11係氮化鋁所構成之故,活性金屬化合物層41係成為氮化鈦(TiN)層。
在此,本實施形態之絕緣電路基板10中,從電路層12(金屬層13)與陶瓷基板11之接合界面至電路層12(金屬層13)側10μm至50μm之領域之最大壓入硬度成為70mgf/μm2
以上150gf/μm2
以下之範圍內。
然而,上述之最大壓入硬度之下限係較佳為75mgf/μm2
以上,更佳為85mgf/μm2
以上。另一方面,上述之最大壓入硬度之上限係較佳為135gf/μm2
以下,更佳為125mgf/μm2
以下。
又,本實施形態之絕緣電路基板10中,如圖3示,活性金屬化合物層41之活性金屬化合物粒子45之最大粒子徑為180nm以下為佳。此等活性金屬化合物粒子45之間之粒界係成為金屬相。活性金屬化合物粒子45之最大粒子徑成為180nm以下之故,增加相對硬度低之金屬相所佔之比例,提升活性金屬化合物層41之耐衝擊性。由此,例如於銅構件,超音波接合端子材之時,可抑制活性金屬化合物層41之龜裂之產生,銅構件與陶瓷構件之剝離,或抑制陶瓷構件之龜裂之產生。
然而,活性金屬化合物層41之活性金屬化合物粒子45之最大粒子徑為150nm以下為佳,較佳為120nm以下。
更且,本實施形態之絕緣電路基板10中,於活性金屬化合物層41之內部,存在Si、Cu、Ag為佳。
然而,存在於此活性金屬化合物層41之Si、Cu、Ag係可將活性金屬化合物層41之活性金屬化合物粒子45之粒子間及粒界,使用透過型電子顯微鏡觀察,經由獲得EDS光譜加以確認。將活性金屬化合物層41之EDS光譜之一例示於圖4。確認到Si、Cu、Ag之尖峰,可知於活性金屬化合物層41內,存在Si、Cu、Ag。
以下,對於關於本實施形態之絕緣電路基板10之製造方法,參照圖5及圖6加以說明。
(層積工程S01)
首先,準備氮化矽(Si3
N4
)所成陶瓷基板11,如圖6所示,於成為電路層12之銅板22與陶瓷基板11之間,以及成為金屬層13之銅板23與陶瓷基板11之間,配設Ag-Ti系銲材(Ag-Cu-Ti系銲材)24。
然而,做為Ag-Ti系銲材(Ag-Cu-Ti系銲材)24係例如令Cu在0mass%以上32mass%以下之範圍內,令活性金屬之Ti在0.5mass%以上20mass%以下之範圍被包含,剩餘部份使用Ag及不可避免不純物之組成者為佳。又,Ag-Cu-Ti系銲材24之厚度係成為2μm以上10μm以下之範圍內為佳。
(加熱工程S02)
接著,在加壓銅板22與陶瓷基板11之狀態下,在真空環境之加熱爐內,進行加熱,熔融Ag-Ti系銲材(Ag-Cu-Ti系銲材)24。
在此,加熱工程S02之加熱溫度係成為Cu與Si之共晶點溫度以上850℃以下之範圍內。又,於此加熱工程S02中,上述加熱溫度之溫度積分值係成為1℃・h以上110℃・h以下之範圍內。
又,此加熱工程S02之加壓荷重係成為0.029MPa以上2.94MPa以下之範圍內。
(冷卻工程S03)
然後,加熱工程S02之後,經由進行冷卻,凝固熔融之Ag-Ti系銲材(Ag-Cu-Ti系銲材)24。
然而,此冷卻工程S03之冷卻速度係成為2℃/min以上10℃/min以下之範圍內為佳。
在此,上述加熱工程S02中,於活性金屬化合物層41,於TiN之粒界存在共晶液相,將此共晶液相做為擴散之旁路,相互擴散陶瓷基板11側之Si及Ag-Cu-Ti系銲材24之Ag、Cu、Ti,促進陶瓷基板11之界面反應。
由此,從陶瓷基板11之接合界面至電路層12(金屬層13)側10μm至50μm之領域之最大壓入硬度成為70mgf/μm2
以上150gf/μm2
以下之範圍內。
如以上所述,經由層積工程S01、和加熱工程S02、和冷卻工程S03,接合陶瓷基板11與銅板22、23,製造本實施形態之絕緣電路基板10。
(散熱片接合工程S04)
接著,於絕緣電路基板10之金屬層13之另一方的面側,接合散熱片30。
將絕緣電路基板10與散熱片30,隔著銲錫材加以層積,將入加熱爐、隔著銲錫層32,銲錫接合絕緣電路基板10與散熱片30。
(半導體元件接合工程S05)
接著,於絕緣電路基板10之電路層12之一方的面,將半導體元件3經由銲錫接合。
經由上述之工程,製出圖1所示之功率模組1。
根據以上構成之本實施形態之絕緣電路基板10(銅/陶瓷接合體)中,從電路層12(金屬層13)與陶瓷基板11之接合界面至電路層12(金屬層13)10μm至50μm之領域之最大壓入硬度為70mgf/μm2
以上之時,充分熔融接合界面附近之銅,而產生液相,更強固接位陶瓷基板11與電路層12(金屬層13)。
另一方面,上述之最大壓入硬度抑制在150mgf/μm2
以下之故,接合界面附近不會過硬,抑制冷熱周期負荷時之龜裂之產生。
本實施形態之絕緣電路基板10中,形成於陶瓷基板11與電路層12(金屬層13)之接合界面之活性金屬化合物層41之活性金屬化合物粒子45之最大粒子徑為180nm以下之時,於活性金屬化合物層41中,相對硬度低之金屬相所成粒界領域所佔之比例變多,可確保活性金屬化合物層41之耐衝擊性。由此,例如於電路層12(金屬層13),超音波接合端子材之時,可抑制活性金屬化合物層41之龜裂之產生,電路層12(金屬層13)與陶瓷基板11之剝離,或抑制陶瓷基板11之龜裂之產生。
又,本實施形態之絕緣電路基板10中,於活性金屬化合物層41內,存在Si、Cu、Ag之時,伴隨可抑制活性金屬化合物層41之龜裂之產生,於陶瓷基板11與電路層12(金屬層13)之接合界面不產生未反應部,更且可得接合強度高之絕緣電路基板10。
以上,雖對於本發明的實施形態做了說明,但本發明非限定於此,在不脫離該發明之技術思想之範圍下,可適切加以變更。
例如,本實施形態中,雖於絕緣電路基板搭載半導體元件構成功率模組者做了說明,但非限定於此。例如,可於絕緣電路基板之電路層搭載LED元件構成LED模組亦可,於絕緣電路基板之電路層搭載熱電元件構成熱電模組亦可。
又,本實施形態之絕緣電路基板中,就電路層與金屬層皆經由銅或銅合金所成銅板加以構成做了說明,但未限定於此。
例如只要是電路層與陶瓷基板以本發明之銅/陶瓷接合體構成冒,不限定金屬層之材質或接合方法,可沒有金屬層,亦可為金屬層由鋁或鋁合金所成,亦可為以銅與鋁之層積體加以構成。
另一方面,金屬層與陶瓷基板以本發明之銅/陶瓷接合體加以構成時,不限定電路層之材質或接合方法,可為電路層以鋁或鋁合金構成,亦可為以銅與鋁之層積體加以構成。
更且,本實施形態中,就於層積工程S01中,於銅板22、23與陶瓷基板11之間,配設Ag-Ti系銲材(Ag-Cu-Ti系銲材)24者做了說明,但非限定於此,使用含有其他之活性金屬之接合材亦可。
又,本實施形態中,陶瓷基板以氮化矽(Si3
N4
)構成者做了說明,但非限定於此,亦可為以其他含矽之陶瓷加以構成。
[實施例]
以下,對於確認本發明之效果所進行之確認實驗結果加以說明。
(實施例1)
首先,準備氮化矽(Si3
N4)
所成陶瓷基板(40mm× 40mm×0.32mm)。
於此陶瓷基板之兩面,將無氧銅所成銅板(37mm× 37mm×厚1.0mm),使用表1所示含活性金屬之Ag-Cu系銲材,以表1所示條件,接合銅板與陶瓷基板,得到絕緣電路基板(銅/陶瓷接合體)。然而,接合時之真空爐之真空度為5×10-3
Pa。
對於所得絕緣電路基板(銅/陶瓷接合體),將接合界面附近之最大壓入硬度、冷熱周期可靠性,如以下加以評估。
(接合界面附近之最大壓入硬度)。
從銅板與陶瓷基板之接合界面至銅板側10μm至50μm之領域中,使用壓入硬度試驗機(elionix股份有限公司製ENT-1100a),測定最大壓入硬度。測定條件係使用Berkovich壓頭,成為Fmax
=5000mgf(分割數=500,步驟間隙=20ms)。然而,經由砂輪研磨露出對象剖面,成為測定面,如圖7所示,以10μm間隔,於50處所之測定點,測定壓入硬度,確認其中之壓入硬度之最大值。
於此壓入硬度試驗中,如圖8所示,在壓頭壓入過程中,可連續性測定負荷之荷重與壓入深度,從荷重-變位曲線,取得塑性/彈性/蠕變等之資訊。
(冷熱周期可靠性)
保持在以下環境之後,經由SAT檢查,檢查銅板與陶瓷基板之接合界面,判定陶瓷破裂之有無。
-78℃×2min←→350℃×2min
然後,評估破裂產生之周期數令不足6次確認破裂者評估為「×」,令6次以上未確認破裂者評估為「○」。將評估結果示於表1。
做為活性金屬使用Ti,加熱工程之溫度積分值為0.5℃・h之比較例1中,接合界面之最大壓入硬度為174mgf/μm2
較本發明之範圍為大,冷熱周期可靠性則成為「×」。
做為活性金屬使用Zr,加熱工程之溫度積分值為0.7℃・h之比較例2中,接合界面之最大壓入硬度為160 mgf/μm2
較本發明之範圍為大,冷熱周期可靠性則成為「×」。
相較之下,接合界面之最大壓入硬度為70mgf/μm2
以上150mgf/μm2
以下之範圍內之本發明例1-8中,無關於活性金屬之種類,冷熱周期可靠性則成為「〇」。
(實施例2)
準備氮化矽(Si3
N4
)所成陶瓷基板(40mm×40mm× 0.32mm)。
於此陶瓷基板之兩面,將無氧銅所成銅板(37mm× 37mm×厚0.2mm),使用表2所示含活性金屬之Ag-Cu系銲材,以表2所示條件,接合銅板與陶瓷基板,得到絕緣電路基板(銅/陶瓷接合體)。然而,接合時之真空爐之真空度為5×10-3
Pa。
對於所得絕緣電路基板(銅/陶瓷接合體),將接合界面附近之最大壓入硬度,以與實施例1相同之方法評估。
又,對於活性金屬化合物層之活性金屬化合物粒子之最大粒子徑、活性金屬化合物層中之Si、Ag、Cu之有無、超音波接合性,如以下方法加以評估。
(活性金屬化合物粒子之最大粒子徑)
將活性金屬化合物層,使用透過型電子顯微鏡(FEI公司製Titan ChemiSTEM),以倍率50萬倍觀察,得HAADF像。
經由此HAADF像之畫像解析,算出活性金屬化合物粒子之相當圓直徑。從10視野之畫像解析之結果,將觀察之活性金屬化合物粒子之最大之相當圓直徑,做為最大粒子徑示於表2。
(活性金屬化合物層中之Si、Ag、Cu之有無)
將活性金屬化合物層之粒界,使用透過型電子顯微鏡(FEI公司製Titan ChemiSTEM),以加速電壓200kV,倍率50萬倍至70萬倍,每1點以7μs累計1100圖框。於EDS光譜中,Si、Ag、Cu為0.15cps/eV之時,Si、Ag、Cu評估為「有」。
(超音波接合之評估)
對於絕緣電路基板,使用超音波金屬接合機(超音波工業股份有限公司製:60C-904),將銅端子(10mm× 20mm×2.0mm厚),以荷重850N,崩潰量0.7mm,接合區域5mm×5mm之條件,進行超音波接合。然而,銅端子係各別以50個為單位接合。
於接合後,使用超音波探傷裝置(日立power solutions股份有限公司製FineSAT200),檢查銅板與陶瓷基板之接合界面。將觀察到50個中5個以上之銅板與陶瓷基板之剝離或陶瓷破裂者評估為「D」,將觀察到50個中3個以上4個以下之銅板與陶瓷基板之剝離或陶瓷破裂者評估為「C」,將觀察到50個中1個以上2個以下之銅板與陶瓷基板之剝離或陶瓷破裂者評估為「B」,將50個所有未觀察到銅板與陶瓷基板之剝離或陶瓷破裂者評估為「A」。將評估結果示於表2。
各別比較活性金屬為Ti之本發明例11-13、活性金屬為Hf之本發明例14-16、活性金屬為Zr之本發明例17-19時,藉由活性金屬化合物層之活性金屬化合物粒子之最大粒子徑變小,可確認抑制超音波接合時之銅板與陶瓷基板之剝離,或陶瓷基板之龜裂之產生。
以上之結果,根據本發明例時,可確認提供接合強度高,且在冷熱周期可靠性尤其優異之銅/陶瓷接合體,及絕緣電路基板。
10:絕緣電路基板(銅/陶瓷接合體)
11:陶瓷基板(陶瓷構件)
12:電路層(銅構件)
13:金屬層(銅構件)
41:活性金屬化合物層
45:活性金屬化合物粒子
[圖1]關於使用本發明之實施形態之絕緣電路基板之功率模組之概略說明圖。
[圖2]關於本發明之實施形態之絕緣電路基板之電路層(金屬層)與陶瓷基板之接合界面的擴大說明圖。
[圖3]形成於關於本發明之實施形態之絕緣電路基板之電路層(金屬層)與陶瓷基板之接合界面之活性金屬化合物層之觀察照片。
[圖4]活性金屬化合物層之EDS光譜之一例。
[圖5]有關本發明的實施形態之絕緣電路基板之製造方法之流程圖。
[圖6]有關本發明的實施形態之絕緣電路基板之製造方法之概略說明圖。
[圖7]顯示實施例之接合界面附近之最大壓入硬度之測定處所的說明圖。
[圖8]顯示實施例之壓入硬度試驗之測定原理的說明圖。
Claims (6)
- 一種銅/陶瓷接合體,接合銅或銅合金所成銅構件、和含矽陶瓷所成陶瓷構件而成之銅/陶瓷接合體,其特徵係 從前述銅構件與前述陶瓷構件之接合界面至前述銅構件側10μm至50μm之領域之最大壓入硬度係設為70mgf/μm2 以上150mgf/μm2 以下之範圍內。
- 如請求項1記載之銅/陶瓷接合體,其中,於前述銅構件與前述陶瓷構件之接合界面,於前述陶瓷構件側,形成含有選自Ti、Zr、Nb、Hf之1種或2種以上之活性金屬之化合物的活性金屬化合物層, 前述活性金屬化合物層之前述活性金屬化合物粒子之最大粒子徑為180nm以下。
- 如請求項1或2記載之銅/陶瓷接合體,其中,於前述活性金屬化合物層內,存在Si、Cu、Ag。
- 一種絕緣電路基板,於含矽陶瓷所成陶瓷基板之表面,接合銅或銅合金所成銅板的絕緣電路基板,其特徵係 從前述銅板與前述陶瓷基板之接合界面至前述銅板側10μm至50μm之領域之最大壓入硬度係設為70mgf/μm2 以上150mgf/μm2 以下之範圍內。
- 如請求項4記載之絕緣電路基板,其中,於前述銅板與前述陶瓷基板之接合界面,於前述陶瓷基板側,形成含有選自Ti、Zr、Nb、Hf之1種或2種以上之活性金屬之化合物的活性金屬化合物層, 前述活性金屬化合物層之前述活性金屬化合物之粒子之最大粒子徑為180nm以下。
- 如請求項4或5記載之絕緣電路基板,其中,於前述活性金屬化合物層內,存在Si、Cu、Ag。
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- 2020-12-04 US US17/786,132 patent/US20230022285A1/en active Pending
- 2020-12-04 KR KR1020227023238A patent/KR20220116213A/ko unknown
- 2020-12-04 CN CN202080087117.1A patent/CN114845977B/zh active Active
- 2020-12-04 WO PCT/JP2020/045199 patent/WO2021124923A1/ja unknown
- 2020-12-09 TW TW109143441A patent/TW202142523A/zh unknown
Also Published As
Publication number | Publication date |
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CN114845977B (zh) | 2023-08-25 |
EP4079711A1 (en) | 2022-10-26 |
CN114845977A (zh) | 2022-08-02 |
WO2021124923A1 (ja) | 2021-06-24 |
EP4079711A4 (en) | 2024-02-28 |
KR20220116213A (ko) | 2022-08-22 |
US20230022285A1 (en) | 2023-01-26 |
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