TW202112452A - Substrate processing apparatus and substrate processing method - Google Patents
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- 238000012545 processing Methods 0.000 title claims abstract description 250
- 239000000758 substrate Substances 0.000 title claims abstract description 164
- 238000003672 processing method Methods 0.000 title claims description 11
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 428
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 398
- 238000000034 method Methods 0.000 claims abstract description 50
- 239000003085 diluting agent Substances 0.000 claims abstract description 45
- 230000008569 process Effects 0.000 claims abstract description 44
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 156
- 239000007788 liquid Substances 0.000 claims description 82
- 239000002253 acid Substances 0.000 claims description 33
- 239000000126 substance Substances 0.000 claims description 33
- 238000002156 mixing Methods 0.000 claims description 24
- 238000011282 treatment Methods 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 118
- 229910021641 deionized water Inorganic materials 0.000 description 79
- 239000008367 deionised water Substances 0.000 description 69
- 239000007789 gas Substances 0.000 description 60
- 238000012546 transfer Methods 0.000 description 19
- 239000000243 solution Substances 0.000 description 18
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- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000000498 cooling water Substances 0.000 description 8
- 238000004380 ashing Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
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- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
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- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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Abstract
Description
所揭示的實施型態係關於基板處理裝置及基板處理方法。The disclosed embodiments relate to substrate processing apparatuses and substrate processing methods.
在以往,以臭氧水對半導體晶圓(以下,也稱為晶圓)等之基板進行處理之技術眾所皆知(參照專利文獻1)。 [先前技術文獻] [專利文獻]Conventionally, a technique for processing substrates such as semiconductor wafers (hereinafter also referred to as wafers) with ozone water is well known (refer to Patent Document 1). [Prior Technical Literature] [Patent Literature]
[專利文獻1]日本專利第5779321號公報[Patent Document 1] Japanese Patent No. 5779321
[發明所欲解決之問題][The problem to be solved by the invention]
本揭示係提供可以一面使需要高除去能力的處理,和不需要高除去能力之處理在一個基板處理裝置內混合一面予以實施的技術。 [用以解決問題之技術手段]The present disclosure provides a technique capable of mixing treatments requiring high removal capacity and treatments not requiring high removal capacity in one substrate processing apparatus. [Technical means to solve the problem]
本揭示之一態樣所涉及之基板處理裝置具備臭氧水生成部、基板處理部、臭氧水供給管線、稀釋液供給管線和控制部。臭氧水生成部生成具有給予的臭氧濃度的臭氧水。基板處理部係對基板進行處理。臭氧水供給管線被設置於上述臭氧水生成部和上述基板處理部之間,對上述基板處理部供給上述臭氧水。稀釋液供給管線被連接於上述臭氧水供給管線,對上述臭氧水供給管線供給稀釋液。控制部控制上述臭氧水生成部、上述基板處理部、上述臭氧水供給管線和上述稀釋液供給管線。上述控制部係因應上述基板之處理所涉及之配方,控制朝上述基板處理部的上述臭氧水和上述稀釋液之供給量。 [發明之效果]The substrate processing apparatus according to one aspect of the present disclosure includes an ozone water generating unit, a substrate processing unit, an ozone water supply line, a diluent supply line, and a control unit. The ozone water generating unit generates ozone water having the given ozone concentration. The substrate processing section processes the substrate. An ozone water supply line is provided between the ozone water generating unit and the substrate processing unit, and supplies the ozone water to the substrate processing unit. A diluent supply line is connected to the ozone water supply line, and the diluent is supplied to the ozone water supply line. The control unit controls the ozone water generating unit, the substrate processing unit, the ozone water supply line, and the diluent supply line. The control unit controls the supply amount of the ozone water and the diluent to the substrate processing unit in accordance with the recipe involved in the processing of the substrate. [Effects of Invention]
若藉由本揭示,可以一面使需要高除去能力的處理,和不需要高除去能力之處理在一個基板處理裝置內混合一面予以實施。According to the present disclosure, it is possible to mix treatments that require high removal capacity and treatments that do not require high removal capacity in one substrate processing apparatus.
以下,參照附件圖面,詳細說明本案揭示的基板處理裝置及基板處理方法之實施型態。另外,並非藉由以下所示之各實施型態來限定本揭示。再者,圖面係示意性表示者,必須留意有各要素之尺寸的關係、各要素之比率等與現實不同之情況。並且,即使在圖面之彼此間,也有包含彼此的尺寸之關係或比率不同的部分之情況。Hereinafter, referring to the attached drawings, the implementation mode of the substrate processing apparatus and the substrate processing method disclosed in this case will be described in detail. In addition, the present disclosure is not limited by the implementation types shown below. Furthermore, if the drawing is a schematic representation, it must be noted that the relationship between the dimensions of each element, the ratio of each element, etc. are different from reality. In addition, even between the drawings, there are cases where the relationship or ratio of dimensions is different from each other.
以臭氧水對半導體晶圓(以下,也稱為晶圓)等之基板進行處理之技術眾所皆知。在如此之臭氧水所致的液處理中,液中之臭氧濃度越高除去基板上之光阻膜或殘渣等之能力越高。The technology for processing substrates such as semiconductor wafers (hereinafter also referred to as wafers) with ozone water is well known. In the liquid treatment caused by such ozone water, the higher the ozone concentration in the liquid, the higher the ability to remove the photoresist film or residue on the substrate.
另一方面,如乾蝕刻後之除去殘渣的處理般,有處理液不一定需要高除去能力之情況。但是,在以往之技術中,要一面使需要高除去能力的處理,和不需要高除去能力之處理在一個基板處理裝置內混合一面予以實施則有困難。On the other hand, like the process of removing residues after dry etching, there are cases where the process liquid does not necessarily require high removal ability. However, in the prior art, it is difficult to mix treatments that require high removal capacity and treatments that do not require high removal capacity in one substrate processing apparatus.
因為在生成臭氧水之工程中,要在各個基板配合所需的處理能力而快速地變更液中之臭氧濃度非常困難之故。Because in the process of generating ozone water, it is very difficult to quickly change the ozone concentration in the liquid in accordance with the required processing capacity of each substrate.
於是,期待於以臭氧水處理基板之時,可以一面使需要高除去能力之處理,和不需要高除去能力之處理混合在一個基板處理裝置內一面予以實施的技術。Therefore, when processing substrates with ozone water, it is expected that the processing requiring high removal capability and the processing not requiring high removal capability can be mixed in one substrate processing apparatus and implemented.
[基板處理系統之概要]
首先,一面參照圖1,一面針對實施型態所涉及之基板處理系統1之概略構成予以說明。圖1為表示實施型態所涉及之基板處理系統1之概略構成的圖。另外,基板處理系統1為基板處理裝置之一例。在以下中,為了使位置關係明確,規定彼此正交之X軸、Y軸及Z軸,將Z軸正方向設為垂直向上方向。[Summary of Substrate Processing System]
First, referring to FIG. 1, the schematic configuration of the
如圖1所示般,基板處理系統1具備搬入搬出站2,和處理站3。搬入搬出站2和處理站3係被鄰接設置。As shown in FIG. 1, the
搬入搬出站2具備晶圓傳送盒載置部11,和搬運部12。在晶圓傳送盒載置部11載置以水平狀態收容複數片基板,在實施型態中為半導體晶圓W(以下,稱為晶圓W)的複數晶圓傳送盒C。The carry-in and carry-out
搬運部12與晶圓傳送盒載置部11鄰接設置,在內部具備基板搬運裝置13,和收授部14。基板搬運裝置13具備保持晶圓W之晶圓保持機構。再者,基板搬運裝置13可進行朝水平方向及垂直方向移動及以垂直軸為中心的旋轉,使用晶圓保持機構而在晶圓傳送盒C和收授部14之間進行晶圓W之搬運。The
處理站3與搬運部12鄰接設置。處理站3具備搬運部15和複數處理單元16。處理單元16為基板處理部之一例。複數處理單元16係排列設置在搬運部15之兩側。The
搬運部15在內部具備基板搬運裝置17。基板搬運裝置17具備保持晶圓W之晶圓保持機構。再者,基板搬運裝置17可進行朝水平方向及垂直方向移動及以垂直軸為中心的旋轉,使用晶圓保持機構而在收授部14和處理單元16之間進行晶圓W之搬運。The
處理單元16係對藉由基板搬運裝置17而被搬運之晶圓W進行特定基板處理。針對如此的處理單元16之詳細於後述。The
再者,基板處理系統1具備控制裝置4。控制裝置4為例如電腦,具備控制部18和記憶部19。在記憶部19儲存控制在基板處理系統1中被實行之各種之處理的程式。控制部18係藉由讀出被記憶於記憶部19之程式並實行,來控制基板處理系統1之動作。Furthermore, the
另外,如此之程式係被記錄於藉由電腦可讀取之記憶媒體者,即使為從其記憶媒體被安裝於控制裝置4之記憶部19者亦可。作為藉由電腦可讀取之記憶媒體,例如有硬碟(HD)、軟碟(FD)、光碟(CD)、磁光碟(MO)、記憶卡等。In addition, such a program is recorded in a storage medium readable by a computer, even if it is installed in the
並且,基板處理系統1具備臭氧水生成部5。臭氧水生成部5生成具有給予的臭氧濃度之臭氧水,對處理單元16供給所生成的臭氧水。針對如此的臭氧水生成部5之詳細於後述。In addition, the
在如上述般構成之基板處理系統1中,首先搬入搬出站2之基板搬運裝置13從被載置在晶圓傳送盒載置部11之晶圓傳送盒C取出晶圓W,將所取出之晶圓W載置在收授部14。被載置在收授部14之晶圓W藉由處理站3之基板搬運裝置17從收授部14被取出,而搬入至處理單元16。In the
被搬入至處理單元16之晶圓W藉由處理單元16被處理之後,藉由基板搬運裝置17從處理單元16被搬出,而被載置在收授部14。而且,被載置在收授部14之處理完的晶圓W藉由基板搬運裝置13返回至晶圓傳送盒載置部11之晶圓傳送盒C。After the wafer W carried into the
[基板處理系統之配管構成]
接著,針對基板處理系統1之配管構成,一面參照圖2一面予以說明。圖2為表示實施型態所涉及之基板處理系統1之配管構成的示意圖。[Piping configuration of substrate processing system]
Next, the piping structure of the
在圖2之例中,針對配置6個包含一個處理單元16之處理區域X之情況。另外,為了容易理解,圖示於左下的處理區域X以外之處理區域X內之配管構成省略圖示。In the example of FIG. 2, for the case where six processing areas X including one
如圖2所示般,實施型態所涉及之基板處理系統1具備臭氧水生成部5、臭氧水供給管線6、稀釋液供給管線7和處理單元16。As shown in FIG. 2, the
臭氧水生成部5生成具有給予的臭氧濃度的臭氧水。如此之「給予的臭氧濃度」為例如除去(剝離)被形成在晶圓W(參照圖1)之光阻膜的臭氧濃度,例如為100mg/L~400mg/L。The ozone
臭氧水生成部5具有槽體21、純水供給管線22、臭氧氣體供給管線23。槽體21在內部生成具有給予之臭氧濃度的臭氧水,同時貯留所生成的臭氧水。The ozone
純水供給管線22係對槽體21供給成為臭氧水之原料的DIW(DeIonized Water:去離子水)。從如此之純水供給管線22被供給之DIW為純水之一例。純水供給管線22係依序串聯連接第1管線24、槽體25、第2管線26而構成。The pure
第1管線24係對槽體25供給DIW。如此之第1管線24從上游測依序具有DIW供給源22a、閥體22b、背壓閥22c和流量計22d。DIW供給源22a係例如貯留DIW的槽體。The
背壓閥22c係根據以流量計22d被測量的DIW之流量,調整被供給至槽體25的DIW之流量。即是,背壓閥22c實施根據以流量計22d被測量的DIW之流量的反饋控制。The
在第1管線24中之流量計22d之下游側設置合流部28。而且,在如此之合流部28連接酸系藥液供給管線27。A merging
酸系藥液供給管線27係對純水供給管線22之第1管線24供給有機酸(檸檬酸、乙酸等)、鹽酸、硫酸等之酸系藥液。在實施型態中,藉由對DIW供給酸系藥液降低DIW之pH值,可以增加溶解於如此之DIW之臭氧的濃度。The acid-based chemical
酸系藥液供給管線27從上游測依序具有酸系藥液供給源27a、閥體27b、背壓閥27c和流量計27d。酸系藥液供給源27a係例如能夠生成酸系藥液的機櫃或循環管線等。The acid-based chemical
背壓閥27c係根據以流量計27d被測量的酸系藥液之流量,調整被供給第1管線24之酸系藥液之流量。即是,背壓閥27c實施根據以流量計27d被測量的酸系藥液之流量的反饋控制。The
在第1管線24之合流部28之下游側,設置除去單元57、過濾器29和濃度計30。除去單元57除去與酸系藥液混合之DIW所含的溶解氣體。以如此之除去單元57除去與酸系藥液混合之DIW所含的溶解氣體,可以使臭氧氣體有效率地溶解於與酸系藥液混合的DIW。On the downstream side of the
過濾器29係除去在第1管線24流通之DIW或在酸系藥液供給管線27流通之酸系藥液所含的微粒等之污染物質。濃度計30測量在第1管線24流通之DIW之pH值。The
而且,在合流部28與酸系藥液混合而pH值被調整的DIW被貯留在槽體25。在如此之槽體25之底部連接第2管線26。In addition, the DIW whose pH has been adjusted by mixing with the acid-based chemical in the
再者,槽體25經由閥體31被連接於排放部DR。依此,控制部18(參照圖1)可以於更換槽體25內之DIW之時等,控制閥體31,而將槽體25內之DIW排出至排放部DR。Furthermore, the
第2管線26被設置於槽體25和槽體21之間,從上游側依序具有混合部37和泵浦38。再者,在混合部37連接臭氧氣體供給管線23。The
臭氧氣體供給管線23係將臭氧氣體供給至混合部37。臭氧氣體供給管線23從上游側依序具有臭氧氣體生成部32、過濾器33、閥體34和逆止閥35。The ozone
臭氧氣體生成部32藉由習知技術從氧氣生成臭氧氣體。成為臭氧氣體之原料的氧氣從氧氣供給管線36被供給至臭氧氣體生成部32。氧氣供給管線36具有氧氣供給源36a、背壓閥36b和閥體36c。氧氣供給源36a係例如貯留氧氣的槽體。The ozone
另外,雖然在圖2無圖示,但是在臭氧氣體生成部32連接供給冷卻水之冷卻水供給部,和排出所使用的冷卻水之冷卻水排出部。In addition, although not shown in FIG. 2, the ozone
過濾器33係除去在臭氧氣體供給管線23流通之臭氧氣體所含的微粒等之污染物質。逆止閥35防止臭氧氣體從混合部37逆流。The
混合部37係將從臭氧氣體供給管線23被供給之臭氧氣體當作氣泡注入至在第2管線26流通之DIW之液中,使臭氧溶解於DIW。混合部37可以藉由使用例如開設細孔的起泡器的冒泡法,或將臭氧氣體吹入至高速的水流的噴射法,使臭氧溶解於pH值被調整的DIW。The mixing
泵浦38係升壓臭氧被溶解於DIW之混合液,而供給至槽體21。如此一來,藉由升壓臭氧被溶解於DIW之混合液,可以效率佳地生成具有給予的臭氧濃度之臭氧水。The
在槽體21之上部連接臭氧回收管線41。如此之臭氧回收管線41從槽體21回收不被溶解於DIW之臭氧氣體。依此,抑制在槽體21內過度被升壓的臭氧氣體從槽體21洩漏之情形。An
臭氧回收管線41經由背壓閥42被連接於氣液分離捕集器43。藉由控制該背壓閥42,可以調整被升壓之槽體21之內部壓力。氣液分離捕集器43係使臭氧水從經由臭氧回收管線41被回收之臭氧氣體分離臭氧水。The
再者,氣液分離捕集器43經由閥體44被連接於排放部DR。依此,控制部18控制如此的閥體44,而可以將從臭氧氣體被分離的臭氧水排出至排放部DR。In addition, the gas-
在氣液分離捕集器43之上部連接臭氧回收管線45。而且,分離臭氧水之臭氧氣體經由如此的臭氧回收管線45被供給至臭氧氣體除去部46,在該臭氧氣體除去部46被無害化。An
而且,被無害化的臭氧氣體從排氣部EXH被排出至外部。再者,在臭氧回收管線45設置逆止閥47。另外,雖然在圖2無圖示,但是在臭氧氣體除去部46連接供給冷卻水之冷卻水供給部,和排出所使用的冷卻水之冷卻水排出部。In addition, the harmless ozone gas is discharged to the outside from the exhaust part EXH. Furthermore, a
再者,實施型態所涉及之臭氧水生成部5經由閥體48連接臭氧氣體供給管線23和臭氧回收管線45。依此,控制部18係在臭氧氣體生成部32之啟動時等無法生成高品質的臭氧氣體之情況,藉由將閥體48設為開啟狀態,可以使低品質的臭氧氣體在臭氧氣體除去部46無害化。Furthermore, the ozone
因此,若藉由實施型態時,由於可以對混合部37僅供給高品質之臭氧氣體,故可以生成良好品質的臭氧水。Therefore, according to the implementation type, since only high-quality ozone gas can be supplied to the
臭氧水供給管線6被設置於臭氧水生成部5和處理單元16之間。如此之臭氧水供給管線6係對處理單元16供給在臭氧水生成部5被生成的具有給予之臭氧濃度的臭氧水。The ozone
在臭氧水供給管線6從上游側依序設置背壓閥51、過濾器52、流量計53、加熱器54、濃度計55和閥體56。The ozone
背壓閥51減壓在槽體21內被升壓的臭氧水。依此,可以抑制被設置在較背壓閥51更下游側之機器由於被升壓的臭氧水而破損之情形。再者,藉由控制該背壓閥51,可以調整被升壓之槽體21之內部壓力。The
過濾器52係除去在臭氧水供給管線6流通之臭氧水所含的微粒等之污染物質。加熱器54係將在臭氧水供給管線6流通之臭氧水升溫至給予的溫度(例如,80℃)。依此,可以將被升溫的臭氧水供給至處理單元16。The
濃度計55係測量在臭氧水供給管線6流通之臭氧水之臭氧濃度。控制部18係根據以濃度計55被測量的臭氧水之臭氧濃度,調整在臭氧水生成部5被生成的臭氧水之臭氧濃度。The
例如,控制部18在以濃度計55被測量的臭氧水之臭氧濃度低於給予之臭氧濃度之情況,使從酸系藥液供給管線27被供給之酸系藥液之流量增加。For example, the control unit 18 increases the flow rate of the acid-based chemical solution supplied from the acid-based chemical
依此,由於從純水供給管線22被供給之DIW之pH值下降,故可以使在臭氧水生成部5被生成的臭氧水之臭氧濃度增加。Accordingly, since the pH value of the DIW supplied from the pure
再者,即使控制部18在以濃度計55被測量的臭氧水之臭氧濃度低於給予之臭氧濃度之情況,使從臭氧氣體供給管線23被供給之臭氧氣體之流量及濃度之至少一方增加亦可。Furthermore, even if the ozone concentration of the ozone water measured by the
依此,由於在混合部37被混合的臭氧分子之量增加,故可以增加在臭氧水生成部5被生成的臭氧水之臭氧濃度。Accordingly, since the amount of ozone molecules mixed in the
另一方面,控制部18在以濃度計55被測量的臭氧水之臭氧濃度高於給予之臭氧濃度之情況,使從酸系藥液供給管線27被供給之酸系藥液之流量減少。On the other hand, when the ozone concentration of the ozone water measured by the
依此,由於從純水供給管線22被供給之DIW之pH值上升,故可以使在臭氧水生成部5被生成的臭氧水之臭氧濃度減少。Accordingly, since the pH value of the DIW supplied from the pure
再者,控制部18在以濃度計55被測量的臭氧水之臭氧濃度高於給予之臭氧濃度之情況,使從臭氧氣體供給管線23被供給之臭氧氣體之流量及濃度之至少一方減少。Furthermore, the control unit 18 reduces at least one of the flow rate and the concentration of the ozone gas supplied from the ozone
依此,由於在混合部37被混合的臭氧分子之量減少,故可以減少在臭氧水生成部5被生成的臭氧水之臭氧濃度。Accordingly, since the amount of ozone molecules mixed in the
如此一來,在實施型態中,根據以濃度計55被測量的臭氧水之臭氧濃度,對在臭氧水生成部5被生成的臭氧水之臭氧濃度進行反饋控制。依此,可以使給予之臭氧濃度之臭氧水安定而供給至處理單元16。In this way, in the embodiment, the ozone concentration of the ozone water generated in the ozone
在臭氧水供給管線6中較閥體56更下游側,具有彼此並列設置的複數並列管線6a,和從如此之並列管線6a分歧成各處理單元16的複數分歧管線6b。在圖3之例中,設置三個並列管線6a,各並列管線6a分別對兩個處理單元16供給臭氧水。In the ozone
從並列管線6a分歧的分歧管線6b從上游側依序具有背壓閥61、流量計62、閥體63和合流部64。背壓閥61係根據以流量計62測量的臭氧水之流量,調整在分歧管線6b流通的臭氧水之流量。即是,背壓閥61實施根據以流量計62被測量的臭氧水之流量的反饋控制。The
合流部64連接稀釋液供給管線7。稀釋液供給管線7從上游測依序具有DIW供給源7a、閥體7b、背壓閥7c、流量計7d和加熱器7e。The
DIW供給源7a係例如貯留DIW的槽體。貯留在如此之DIW供給源7a的DIW係稀釋液之一例。另外,實施型態所涉及之稀釋液不限定於DIW,若為可以稀釋臭氧水的藥液即可。The
背壓閥7c係根據以流量計7d被測量的DIW之流量,調整在稀釋液供給管線7流通的DIW之流量。即是,背壓閥7c實施根據以流量計7d被測量的DIW之流量的反饋控制。The
加熱器7e係根據來自控制部18之指令,調整在稀釋液供給管線7流通之DIW的溫度。依此,稀釋液供給管線7可以將被升溫的DIW(以下,也稱為Hot-DIW)和室溫之DIW(以下,也稱為RT-DIW)選擇性地供給至合流部64。The
在此,在實施型態中,控制部18係因應晶圓W之處理所涉及之配方,控制朝處理單元16之臭氧水和稀釋液的供給量。Here, in the embodiment, the control unit 18 controls the supply amount of ozone water and diluent to the
具體而言,控制部18係因應被搬入至處理單元16內之液處理部80(參照圖3)之晶圓W之處理的配方,分別控制從臭氧水供給管線6被供給之臭氧水的供給量,和從稀釋液供給管線7被供給之DIW之供給量。Specifically, the control unit 18 controls the supply of ozone water supplied from the ozone
例如,在實施被乾蝕刻之晶圓W之殘渣除去處理(以下,也稱為事後蝕刻清洗)之情況,處理液不需要高除去能力。於是,控制部18係在選擇事後蝕刻清洗之配方之情況,在合流部64生成臭氧水和RT-DIW混合的處理液,以如此的處理液處理晶圓W。For example, in the case of performing the residue removal process (hereinafter, also referred to as post-etch cleaning) of the dry-etched wafer W, the process liquid does not require high removal capability. Therefore, when the control unit 18 selects the recipe for the post-etching and cleaning, the
再者,在實施將光阻予以灰化處理後的晶圓W之殘渣除去處理(以下,也稱為事後灰化清洗)之情況,處理液需要比事後蝕刻清洗更高的除去能力。Furthermore, in the case of performing a residue removal process (hereinafter, also referred to as post-ashing cleaning) of the wafer W after the photoresist has been ashed, the treatment liquid needs to have a higher removal ability than the post-etching cleaning.
於是,控制部18係在選擇事後灰化清洗之配方之情況,在合流部64生成臭氧水和Hot-DIW混合的處理液,以如此的處理液處理晶圓W。Therefore, when the control unit 18 selects the recipe for the post-ashing cleaning, the
再者,在實施被形成於晶圓W之光阻膜之除去處理(以下,也稱為光阻除去)之情況,處理液需要比事後灰化清洗更高的除去能力。Furthermore, in the case of performing the removal process of the photoresist film formed on the wafer W (hereinafter also referred to as photoresist removal), the treatment liquid needs to have a higher removal ability than the post-ashing cleaning.
於是,控制部18係在選擇光阻除去之配方之情況,不以DIW稀釋臭氧水,以具有給予的臭氧濃度之臭氧水處理晶圓W。Therefore, the control unit 18 does not dilute the ozone water with DIW when selecting the recipe for photoresist removal, and treats the wafer W with ozone water having the given ozone concentration.
另外,最初的臭氧水之臭氧濃度不限定於可以除去被形成在晶圓W之光阻膜的臭氧濃度,即使為在事後灰化清洗中,可以除去被形成在斜面或邊緣部之聚合物殘渣膜的臭氧濃度亦可。In addition, the ozone concentration of the initial ozone water is not limited to the ozone concentration that can remove the photoresist film formed on the wafer W. Even in the post-ashing cleaning, the polymer residue formed on the slope or edge can be removed. The ozone concentration of the membrane can also be used.
如此一來,在實施型態中,因應晶圓W之處理所涉及之配方,控制對晶圓W的臭氧水和稀釋液的供給量。依此,可以一面使需要高除去能力的處理(例如,光阻除去),和不需要高除去能力的處理(例如,事後蝕刻清洗)在一個基板處理系統1內混合一面予以實施。In this way, in the implementation type, the amount of ozone water and diluent supplied to the wafer W is controlled in accordance with the recipe involved in the processing of the wafer W. According to this, it is possible to mix treatments that require high removal capability (for example, photoresist removal) and treatments that do not require high removal capability (for example, post-etching and cleaning) in one
再者,在實施型態中,因應晶圓W之處理所涉及之配方而控制稀釋液(DIW)之溫度,調整臭氧水和稀釋液之混合液的溫度。依此,可以以具有更多樣的處理能力的處理液對晶圓W進行處理。Furthermore, in the implementation type, the temperature of the diluent (DIW) is controlled according to the recipe involved in the processing of the wafer W, and the temperature of the mixed liquid of the ozone water and the diluent is adjusted. According to this, the wafer W can be processed with a processing liquid having a variety of processing capabilities.
再者,在實施型態中,在臭氧水生成部5被生成的臭氧水具有例如可以除去被形成在晶圓W之光阻膜的臭氧濃度為佳。依此,除了不需要高除去能力的處理之外,需要高除去能力之光阻除去處理也可以在相同的基板處理系統1內實施。Furthermore, in the embodiment, it is preferable that the ozone water generated in the ozone
再者,在實施型態中,除臭氧水供給管線6之外,IPA供給管線8也被連接於處理單元16。如此之IPA供給管線8對被搬入至處理單元16之晶圓W供給IPA(異丙醇)。Furthermore, in the embodiment, in addition to the ozone
IPA供給管線8從上游側依序具有IPA供給源8a、閥體8b、背壓閥8c和流量計8d。IPA供給源8a係例如貯留IPA的槽體。The
背壓閥8c係根據以流量計8d被測量的IPA之流量,調整在IPA供給管線8流通的IPA之流量。即是,背壓閥8c實施根據以流量計8d被測量的IPA之流量的反饋控制。The
藉由使用如此之IPA供給管線8,控制部18可以對晶圓W同時供給臭氧水和IPA。如此一來,藉由對臭氧水添加IPA,可以使臭氧水所含的臭氧自己分解而產生OH自由基。By using such an
因此,若藉由實施型態時,可以藉由處理能力比臭氧水單體更高的含有OH自由基的臭氧水,對晶圓W進行處理。針對如此之IPA之具體的吐出方法於後述。Therefore, according to the implementation pattern, the wafer W can be processed by the ozone water containing OH radicals, which has a higher processing capacity than the ozone water alone. The specific dispense method for such IPA will be described later.
再者,在實施型態中,以被連接於相同的並列管線6a之處理單元16彼此吐出臭氧水之時序不重疊之方式,對晶圓W進行處理為佳(所謂的排他控制)。依此,可以減少在臭氧水生成部5需要的臭氧水的生成量。Furthermore, in the embodiment, it is better to process the wafer W in such a way that the
例如,在一個處理單元16的臭氧水之吐出流量為2L/min之情況,不實施上述排他控制之情況,在臭氧水生成部5成所需的臭氧水之生成量成為2L/min×6(處理單元16之數量)=12L/min。For example, when the discharge flow rate of ozone water in one
另一方面,在實施型態中,藉由實施上述排他控制,可以將在臭氧水生成部5所需的臭氧水之生成量減少至2L/min×3(並列管線6a之數量)=6L/min。On the other hand, in the implementation mode, by implementing the above-mentioned exclusive control, the production amount of ozone water required in the ozone
再者,在實施型態中,在臭氧水生成部5生成臭氧水之後,以臭氧水供給管線6之加熱器54使臭氧水升溫。依此,比起於生成臭氧水之時在臭氧水生成部5升溫之情況,可以效率佳地生成具有給予的臭氧濃度的臭氧水。In addition, in the embodiment, after the ozone water is generated by the ozone
因為當臭氧水升溫時不少溶解的臭氧脫氣,故當在臭氧水生成部5生成臭氧水之時升溫時,則需要考慮到脫氣之部分的臭氧氣體之故。Since a lot of the dissolved ozone is degassed when the ozone water is heated, when the temperature is raised when the ozone water is generated in the ozone
繼續針對在基板處理系統1之其他配管構成予以說明。處理單元16經由排出管線65被連接於排放部DR。依此,可以將在處理單元16內被使用於晶圓W之處理的處理液排出至排放部DR。The description of other piping configurations in the
再者,在實施型態中,並列管線6a經由背壓閥66被連接於排放部DR。依此,可以將在處理單元16不被使用的臭氧水排出至排放部DR。Furthermore, in the embodiment, the
[處理單元之構成]
接著,針對處理單元16之構成,一面參照圖3及圖4一面予以說明。圖3為表示實施型態所涉及之處理單元16之構成例的示意圖,圖4為表示實施型態所涉及之液供給部90之構成例的概略剖面圖。[Construction of processing unit]
Next, the configuration of the
如圖3所示般,處理單元16具備腔室70、液處理部80、液供給部90和回收杯100。As shown in FIG. 3, the
腔室70收容液處理部80、液供給部90和回收杯100。在腔室70之頂棚部設置有FFU(Fan Filter Unit)71。FFU71在腔室70內形成下向流。The
液處理部80具備保持部81、支柱部82和驅動部83,對被載置的晶圓W施予液處理。保持部81係將晶圓W保持水平。支柱部82為在垂直方向延伸之構件,基端部藉由驅動部83可旋轉地被支撐,在前端部水平地支撐保持部81。驅動部83係使支柱部82繞垂直軸旋轉。The
如此之液處理部80係藉由使用驅動部83使支柱部82旋轉而使被支撐於支柱部82之保持部81旋轉,依此使被保持於保持部81之晶圓W旋轉。In this way, the
在液處理部80具備的保持部81之上面,設置在從側面保持晶圓W之保持構件81a。晶圓W藉由如此之保持構件81a在從保持部81之上面些許間隔開之狀態下被水平保持。另外,晶圓W係在使進行基板處理的表面朝向上方之狀態被保持於保持部81。On the upper surface of the holding
液供給部90係對晶圓W供給臭氧水及IPA。液供給部90具備噴嘴91a、91b、水平地支撐如此的噴嘴91a、91b之臂部92,和使臂部92迴旋及升降的迴旋升降機構93。The
噴嘴91a係臭氧水吐出噴嘴之一例,被連接於臭氧水供給管線6之分岐管線6b。如圖4所示般,在噴嘴91a形成吐出口91aa。液供給部90可以將吐出口91aa配置在晶圓W中之中央部之正上方。The
依此,液供給部90可以將臭氧水供給管線6被供給的臭氧水吐出至晶圓W之中央部。而且,被吐出至晶圓W之中央部的臭氧水藉由晶圓W之轉動從中央部朝邊緣部擴散。Accordingly, the
噴嘴91b為IPA吐出噴嘴之一例,被連接於IPA供給管線8。在噴嘴91b形成複數吐出口91ba。液供給部90可以將複數吐出口91ba從晶圓W之中央部沿著徑向配置。The
依此,液供給部90可以經由IPA供給管線8而被供給的IPA沿著晶圓W之徑向吐出。而且,沿著晶圓W之徑向被吐出的IPA藉由晶圓W之轉動在晶圓W之全體擴散。Accordingly, the
如此一來,在實施型態中,被分為被配置在晶圓W之中央部的噴嘴91a,和沿著晶圓W之徑向而被配置的噴嘴91b而對晶圓W吐出臭氧水和IPA。In this way, in the embodiment, it is divided into a
在此,於混合臭氧水和IPA之時產生的OH自由基在短時間失去活化。因此,假設從被配置在晶圓W之中央部的兩根噴嘴吐出臭氧水和IPA雙方之情況,在中央部產生的OH自由基直至臭氧水到達至邊緣部為止有失去活性之虞。Here, the OH radicals generated when ozone water and IPA are mixed lose their activation in a short time. Therefore, assuming that both ozone water and IPA are ejected from two nozzles arranged in the center of the wafer W, the OH radicals generated in the center may lose activity until the ozone water reaches the edge.
另一方面,在實施型態中,分為被配置在中央部之噴嘴91a和沿著徑向而被配置之噴嘴91b,而對晶圓W吐出臭氧水和IPA,依此可以在晶圓W之全面混合臭氧水和IPA。依此,在實施型態中,可以使OH自由基在晶圓W之全體產生。On the other hand, in the embodiment, it is divided into a
因此,若藉由實施型態時,由於可以在晶圓W之全面均等地實施OH自由基所致的處理,故可以在晶圓W之全面實施較臭氧水單體高的處理能力。Therefore, if the implementation type is adopted, since the processing caused by the OH radicals can be performed evenly on the entire surface of the wafer W, the processing capacity of the entire wafer W can be higher than that of ozone water alone.
另外,在上述例中,雖然針對從被配置在中央部之噴嘴91a吐出臭氧水,從沿著徑向而被被配置的噴嘴91b吐出IPA之例予以表示,但是即使從噴嘴91a吐出IPA,從噴嘴91b吐出臭氧水亦可。In addition, in the above example, although the ozone water is discharged from the
即使在此情況,由於可以在晶圓W之全面混合臭氧水和IPA,故可以在晶圓W之全面混合OH自由基。Even in this case, since ozone water and IPA can be mixed on the entire surface of the wafer W, OH radicals can be mixed on the entire surface of the wafer W.
再者,即使從沿著徑向而被配置之噴嘴91b吐出臭氧水和IPA雙方亦可。圖5為表示實施型態所涉及之液供給部90之另外構成例的概略剖面圖。In addition, even if both ozone water and IPA are discharged from the
如圖5所示般,從被設置在作為長條噴嘴的噴嘴91b的吐出口91ba吐出IPA,從接近於如此之吐出口91ba而被設置的吐出口91bb吐出臭氧水。As shown in FIG. 5, IPA is discharged from the discharge port 91ba provided in the
並且,藉由將吐出口91ba及吐出口91bb朝向位於噴嘴91b和晶圓W之間的混合區域M,可以在如此的混合區域M混合臭氧水和IPA。In addition, by directing the discharge port 91ba and the discharge port 91bb toward the mixing area M between the
依此,由於可以在混合區域M產生的OH自由基快速地供給至晶圓W,故可以在晶圓W之全面實施較臭氧水單體更高的處理能力。Accordingly, since the OH radicals generated in the mixing region M can be quickly supplied to the wafer W, it is possible to implement a higher processing capacity than ozone water alone on the entire surface of the wafer W.
實施型態所涉及之液供給部90除了上述噴嘴91a、91b之外,具有DIW吐出噴嘴(無圖示)和SC1吐出噴嘴(無圖示)。DIW吐出噴嘴可以對晶圓W吐出作為沖洗液之一例的DIW。SC1吐出噴嘴可以對晶圓W吐出在晶圓W之表面防止微粒之再附著的SC1(氨和過氧化氫水之混合液)。The
另外,在實施型態之處理單元16中,雖然針對噴嘴91a、91b被配置在晶圓W之上方(表面側)的例予以表示,但是即使噴嘴91a、91b被配置在晶圓W之下方(背面側)亦可。In addition, in the
返回圖3之說明。回收杯100係被配置成包圍保持部81,藉由保持部81之旋轉補捉從晶圓W飛散之處理液。在回收杯100之底部形成有排液口101,藉由回收杯100被捕捉之處理液從排液口101被排出至處理單元16之外部。Return to the description of Figure 3. The
再者,在回收杯100之底部形成將從FFU71被供給之氣體排出至處理單元16之外部的排氣口102。Furthermore, an
[各種變形例]
接著,針對實施型態之各種變形例所涉及之基板處理系統1之配管構成,一面參照圖6~8一面予以說明。圖6為表示實施型態之變形例1所涉及之基板處理系統1之配管構成的示意圖。[Various Modifications]
Next, the piping structure of the
如圖6所示般,變形例1所涉及之基板處理系統1係臭氧水供給管線6之配管構成與實施型態不同。在此,在之後的例中,針對與實施型態相同的部分標示相同符號,省略詳細說明。As shown in FIG. 6, the
變形例1所涉及之基板處理系統1中,複數並列管線6a非排放部DR而係被連接於臭氧水生成部5。具體而言,複數並列管線6a經由循環管線9被連接於臭氧水生成部5之槽體25。In the
依此,在處理單元16不被使用的臭氧水可以經由循環管線9返回至臭氧水生成部5。因此,若藉由變形例1時,由於可以活用未使用的臭氧水而生成更多的臭氧水,故可以在臭氧水生成部5效率佳地生成臭氧水。Accordingly, the ozone water that is not used in the
另外,在循環管線9從上游側依序設置閥體67和背壓閥68。再者,因被貯留於槽體25之溶液成為包含臭氧之溶液,故來自如此之槽體25的排氣經由管線58而被供給至臭氧氣體除去部46,被無害化。In addition, a
再者,在圖6的例中,僅針對將在處理單元16不被使用的臭氧水返回至臭氧水生成部5之情況予以表示。另一方面,即使藉由設置從循環管線9被分歧至排放部DR之分歧管線(無圖示),以將在處理單元16不被使用之臭氧水返回至臭氧水生成部5之情況,和從排放部DR排出之情況,因應狀況而予以切換亦可。In addition, in the example of FIG. 6, only the case where the ozone water not used in the
圖7為表示實施型態之變形例2所涉及之基板處理系統1之配管構成的示意圖。另外,在圖7中,省略臭氧水生成部5之詳細的圖示。如圖7所示般,變形例2所涉及之基板處理系統1係臭氧水供給管線6之分歧管線6b之構成與變形例1不同。FIG. 7 is a schematic diagram showing the piping configuration of the
具體而言,一個並列管線6a首先從一個分岐管線6b1分歧,而且分歧管線6b1被分為與各者的處理單元16連接的分歧管線6b2。而且,在變形例2中,在臭氧水供給管線6之閥體56之上游側,不設置加熱器54,在各者的分歧管線6b1設置加熱器54A。Specifically, one
在如此之變形例2中,藉由以加熱器54A升溫臭氧水,可以對處理單元16供給被升溫的臭氧水。In the second modification as described above, by heating the ozone water with the
再者,在變形例2中,可以不用升溫在處理單元16不被使用的臭氧水而返回至臭氧水生成部5。依此,於活用未使用之臭氧水而生成臭氧水之時,可以抑制如此之臭氧水之溫度上升之情形。Furthermore, in
因此,若藉由變形例2時,可以在臭氧水生成部5效率更佳地生成臭氧水。Therefore, according to
圖8為表示實施型態之變形例3所涉及之基板處理系統1之配管構成的示意圖。另外,在圖8中,省略設置有處理單元16等之處理區域X的圖示。FIG. 8 is a schematic diagram showing the piping configuration of the
如圖8所示般,變形例3所涉及的臭氧水生成部5係在第2管線26,於泵浦38之下游側設置混合部37。依此,由於可以使臭氧溶解於在泵浦38被升壓的DIW,故可以效率佳地生成具有給予的臭氧濃度之臭氧水。As shown in FIG. 8, the ozone
實施型態所涉及之基板處理裝置(基板處理系統1)具備臭氧水生成部5、基板處理部(處理單元16)、臭氧水供給管線6、稀釋液供給管線7和控制部18。臭氧水生成部5生成具有給予的臭氧濃度的臭氧水。基板處理部(處理單元16)對基板(晶圓W)進行處理。臭氧水供給管線6被設置於臭氧水生成部5和基板處理部(處理單元16)之間,對基板處理部(處理單元16)供給臭氧水。稀釋液供給管線7被連接於臭氧水供給管線6,對臭氧水供給管線6供給稀釋液。控制部18控制臭氧水生成部5、基板處理部(處理單元16)、臭氧水供給管線6和稀釋液供給管線7。控制部18係因應基板(晶圓W)之處理所涉及之配方,控制朝基板處理部(處理單元16)之臭氧水和稀釋液的供給量。依此,可以一面使需要高除去能力的處理,和不需要高除去能力之處理在一個基板處理系統1內混合一面予以實施。The substrate processing apparatus (substrate processing system 1) according to the embodiment includes an ozone
再者,在實施型態所涉及之基板處理裝置(基板處理系統1)中,臭氧水生成部5具有槽體21、純水供給管線22、臭氧氣體供給管線23。純水供給管線22被連接於槽體21,對槽體21供給純水(DIW)。臭氧氣體供給管線23被連接於純水供給管線22,對純水供給管線22供給臭氧氣體。控制部18係在純水供給管線22內混合純水(DIW)和臭氧氣體,同時純水(DIW)和純水氣體的混合液在槽體21內予以升壓而生成臭氧水。依此,可以效率佳地生成具有給予的臭氧濃度的臭氧水。Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the ozone
再者,實施型態所涉及之基板處理裝置(基板處理系統1)中,在純水供給管線22,經由酸系藥液供給管線27被供給酸系藥液。依此,可以降低成為臭氧水之原料的DIW的pH值。Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the pure
再者,在實施型態所涉及之基板處理裝置(基板處理系統1)中,臭氧水供給管線6具有測量臭氧水之臭氧濃度的濃度計55。控制部18係根據以濃度計55被測量的臭氧水之臭氧濃度,調整被供給至純水供給管線22之酸系藥液的流量。依此,可以使給予之臭氧濃度之臭氧水安定而供給至處理單元16。Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the ozone
再者,在實施型態所涉及之基板處理裝置(基板處理系統1)中,臭氧水供給管線6具有測量臭氧水之臭氧濃度的濃度計55。控制部18係根據以濃度計55被測量的臭氧水之臭氧濃度,調整被供給至純水供給管線22之臭氧氣體之流量及濃度之至少一方。依此,可以使給予之臭氧濃度之臭氧水安定而供給至處理單元16。Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the ozone
再者,在實施型態所涉及之基板處理裝置(基板處理系統1)中,基板處理部(處理單元16)具有臭氧水吐出噴嘴(噴嘴91a)和IPA吐出噴嘴(噴嘴91b)。臭氧水吐出噴嘴(噴嘴91a)被連接於臭氧水供給管線6,對基板(晶圓W)吐出臭氧水或臭氧水和稀釋液的混合液。IPA吐出噴嘴(噴嘴91b)對基板(晶圓W)吐出IPA。依此,可以藉由處理能力比臭氧水單體更高的含有OH自由基的臭氧水,對晶圓W進行處理。Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the substrate processing section (processing unit 16) has an ozone water ejection nozzle (
再者,在實施型態所涉及之基板處理裝置(基板處理系統1)中,IPA吐出噴嘴(噴嘴91b)係在基板(晶圓W)之徑向排列複數吐出口91ba而被形成的長條噴嘴。依此,可以在晶圓W之全面實施處理能力比臭氧水單體更高的處理。Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the IPA discharge nozzle (
再者,在實施型態所涉及之基板處理裝置(基板處理系統1)中,稀釋液供給管線7具有加熱稀釋液(DIW)的加熱器7e。控制部18係因應基板(晶圓W)之處理所涉及之配方,控制加熱器7e,而調整臭氧水和稀釋液之混合液的溫度。依此,可以對合流部64選擇性地供給被升溫的DIW和室溫之DIW。Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the
再者,實施型態所涉及之基板處理裝置(基板處理系統1)進一步具備使在基板處理部(處理單元16)不被使用之臭氧水返回至臭氧水生成部5之循環管線9。依此,由於可以活用未使用的臭氧水而生成更多的臭氧水,故可以在臭氧水生成部5效率佳地生成臭氧水。Furthermore, the substrate processing apparatus (substrate processing system 1) according to the embodiment further includes a circulation line 9 for returning ozone water that is not used in the substrate processing section (processing unit 16) to the ozone
再者,在實施型態所涉及之基板處理裝置(基板處理系統1)中,臭氧水供給管線6具有背壓閥51。依此,可以抑制被設置在較背壓閥51更下游側之機器由於被升壓的臭氧水而破損之情形。Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the ozone
[基板處理之順序]
接著,針對實施型態所涉及之基板處理的順序,一面參照圖9及圖10一面予以說明。圖9為表示實施型態所涉及之基板處理系統1實行的基板處理之順序的流程圖。[Order of Substrate Processing]
Next, the sequence of substrate processing involved in the implementation mode will be described with reference to FIGS. 9 and 10. FIG. 9 is a flowchart showing the sequence of substrate processing performed by the
首先,控制部18控制臭氧水生成部5,實施生成具有給予的臭氧濃度之臭氧水的臭氧水生成處理(步驟S101)。針對如此的臭氧水生成處理之詳細於後述。First, the control unit 18 controls the ozone
接著,控制部18控制搬入搬出站2,讀取進行處理的晶圓W之晶圓傳送盒ID或晶圓ID(步驟S102)。該晶圓傳送盒ID或晶圓ID之各者例如個別地登錄於收容複數晶圓W而可搬運的晶圓傳送盒C,可以於如此之晶圓傳送盒C被搬入至晶圓傳送盒載置部11之時等進行讀取。Next, the control unit 18 controls the loading/
接著,控制部18係根據被讀取的晶圓傳送盒ID或晶圓ID,判別晶圓W之工程(步驟S103)。而且,判別晶圓W之工程為事後蝕刻清洗之情況(步驟S104、事後蝕刻清洗),控制部18選擇事後蝕刻清洗的配方(步驟S105)。Next, the control unit 18 discriminates the process of the wafer W based on the read cassette ID or wafer ID (step S103). Furthermore, it is judged that the process of the wafer W is the post-etching and cleaning (step S104, post-etching and cleaning), and the control unit 18 selects the recipe for the post-etching and cleaning (step S105).
接著,控制部18控制臭氧水供給管線6及稀釋液供給管線7,生成混合臭氧水和RT-DIW的處理液(步驟S106)。而且,控制部18控制處理單元16,而以如此的處理液實施晶圓W之液處理(步驟S107)。Next, the control unit 18 controls the ozone
另外,在步驟S105~S107之處理中,即使事先在配方設定臭氧水和RT-DIW之比率本身亦可。再者,在步驟S105~S107之處理中,即使事先在配方設定臭氧水之臭氧濃度,根據以濃度計55被測量的臭氧濃度,對臭氧水和RT-DIW之比率進行反饋控制亦可。In addition, in the processing of steps S105 to S107, even if the ratio of ozone water and RT-DIW itself is set in the recipe in advance. Furthermore, in the processing of steps S105 to S107, even if the ozone concentration of ozone water is set in the recipe in advance, feedback control of the ratio of ozone water and RT-DIW can be performed based on the ozone concentration measured by the
接著,控制部18控制液供給部90之DIW吐出噴嘴,而實施DIW所致之晶圓W之沖洗處理(步驟S108)。而且,控制部18控制液供給部90之SC1吐出噴嘴,而實施SC1所致之晶圓W之再附著防止處理(步驟S109)。Next, the control unit 18 controls the DIW discharge nozzle of the
接著,控制部18控制液供給部90之DIW吐出噴嘴,而實施DIW所致之晶圓W之沖洗處理(步驟S110)。而且,控制部18控制液處理部80而實施晶圓W之乾燥處理(例如旋轉乾燥)(步驟S111)。當如此的步驟S111結束時,一連串的處理完成。Next, the control unit 18 controls the DIW discharge nozzle of the
再者,判別晶圓W之工程為事後灰化清洗之情況(步驟S104、事後灰化清洗),控制部18選擇事後灰化清洗的配方(步驟S112)。Furthermore, it is judged that the process of wafer W is post-ashing cleaning (step S104, post-ashing cleaning), and the control unit 18 selects a recipe for post-ashing cleaning (step S112).
接著,控制部18控制臭氧水供給管線6及稀釋液供給管線7,生成混合臭氧水和Hot-DIW的處理液(步驟S113)。而且,控制部18控制處理單元16,而以如此的處理液實施晶圓W之液處理(步驟S114),移行至步驟S108之處理。Next, the control unit 18 controls the ozone
另外,在步驟S112~S114之處理中,即使事先在配方設定臭氧水和Hot-DIW之比率本身亦可。再者,在步驟S112~S114之處理中,即使事先在配方設定臭氧水之臭氧濃度,根據以濃度計55被測量的臭氧濃度,對臭氧水和Hot-DIW之比率進行反饋控制亦可。In addition, in the processing of steps S112 to S114, even if the ratio of ozone water and Hot-DIW itself is set in the recipe in advance. Furthermore, in the processing of steps S112 to S114, even if the ozone concentration of ozone water is set in the recipe in advance, feedback control of the ratio of ozone water and Hot-DIW can be performed based on the measured ozone concentration by the
再者,判別晶圓W之工程為光阻除去之情況(步驟S104、光阻除去),控制部18選擇光阻除去的配方(步驟S115)。Furthermore, it is judged that the process of wafer W is photoresist removal (step S104, photoresist removal), and the control unit 18 selects a recipe for photoresist removal (step S115).
接著,控制部18係控制臭氧水供給管線6、IPA供給管線8及處理單元16,而以液處理實施臭氧水或臭氧水及IPA(步驟S116),移行至步驟S108之處理。Next, the control unit 18 controls the ozone
另外,在步驟S115、S116之處理中,即使將臭氧水之比率設為100%事先設定在配方亦可,且事先在配方設定臭氧水和IPA之比率本身亦可。In addition, in the processing of steps S115 and S116, even if the ratio of ozone water is set to 100%, the formula can be set in advance, and the ratio of ozone water and IPA itself can be set in the formula in advance.
圖10為表示實施型態所涉及之基板處理系統1實行的臭氧水生成處理之順序的流程圖。首先,控制部18控制臭氧水生成部5,混合DIW和酸系藥液,生成具有給予的pH值的DIW(步驟S201)。FIG. 10 is a flowchart showing the procedure of ozone water generation processing performed by the
接著,控制部18係控制臭氧水生成部5,而在具有給予的pH值之DIW混合臭氧氣體(步驟S202)。而且,將DIW和臭氧氣體的混合液在槽體21內予以升壓(步驟S203)。當如此的步驟S203結束時,一連串的臭氧水生成處理完成。Next, the control unit 18 controls the ozone
實施型態所涉及之基板處理方法包含生成臭氧水的工程(步驟S101),和液處理的工程(步驟S107、S114、S116)。生成臭氧水的工程(步驟S101)生成具有給予之臭氧濃度的臭氧水。液處理的工程(步驟S107、S114、S116)係因應基板(晶圓W)之處理所涉及之配方,以臭氧水和稀釋臭氧水之稀釋液的比率被控制的處理液進行處理。依此,可以一面使需要高除去能力的處理,和不需要高除去能力之處理在一個基板處理系統1內混合一面予以實施。The substrate processing method involved in the implementation mode includes a process of generating ozone water (step S101) and a process of liquid treatment (steps S107, S114, and S116). The process of producing ozone water (step S101) produces ozone water having the given ozone concentration. The liquid processing process (steps S107, S114, S116) is based on the recipe involved in the processing of the substrate (wafer W), and the processing liquid is processed with a controlled ratio of ozone water and diluted ozone water. According to this, it is possible to perform a process requiring a high removal capacity and a treatment not requiring a high removal capacity in one
再者,在實施型態所涉及之基板處理方法中,生成臭氧水的工程(步驟S101)包含混合純水和臭氧氣體之工程(步驟S202),和將純水和臭氧氣體之混合液在槽體21內予以升壓的工程(步驟S203)。依此,可以效率佳地生成具有給予的臭氧濃度的臭氧水。Furthermore, in the substrate processing method related to the implementation mode, the process of generating ozone water (step S101) includes the process of mixing pure water and ozone gas (step S202), and putting the mixture of pure water and ozone gas in the tank The process of boosting the pressure in the body 21 (step S203). According to this, it is possible to efficiently generate ozone water having the given ozone concentration.
再者,在實施型態所涉及之基板處理方法中,生成臭氧水的工程(步驟S101)包含在混合純水和臭氧氣體之工程(步驟S202)之前,混合純水和酸系藥液的工程(步驟S201)。依此,可以降低成為臭氧水之原料的DIW的pH值。Furthermore, in the substrate processing method of the embodiment, the process of generating ozone water (step S101) includes the process of mixing pure water and acid-based chemical solution before the process of mixing pure water and ozone gas (step S202) (Step S201). In this way, the pH value of DIW, which is the raw material of ozone water, can be lowered.
再者,在實施型態所涉及之基板處理方法中,進行液體處理的工程(步驟S116)對基板(晶圓W)同時吐出處理液和IPA。依此,可以藉由處理能力比臭氧水單體更高的含有OH自由基的臭氧水,對晶圓W進行處理。Furthermore, in the substrate processing method according to the embodiment, the process of liquid processing (step S116) is performed to simultaneously discharge the processing liquid and IPA to the substrate (wafer W). Accordingly, the wafer W can be processed by the ozone water containing OH radicals, which has a higher processing capacity than the ozone water monomer.
以上,雖然針對本揭示之實施型態予以說明,但是本揭示並非限定於上述實施型態,只要在不脫離其主旨的範圍可以進行各種變更。例如,在上述實施型態中,即使在臭氧水供給管線6設置脫氣機構亦可。依此,可以抑制在從以加熱器54被升溫的臭氧水將臭氧氣體予以脫氣之時,如此之臭氧氣體洩漏至外部之情形。In the above, although the embodiment of the present disclosure has been described, the present disclosure is not limited to the above-mentioned embodiment, and various changes can be made as long as it does not deviate from the scope of the spirit. For example, in the above-mentioned embodiment, even if the ozone
再者,在上述實施型態中,針對對成為臭氧水之原料的DIW供給酸系藥液,調整如此之DIW之pH值的例予以表示,但是不一定要調整成為臭氧水之原料的DIW之pH值。Furthermore, in the above-mentioned embodiment, an example of adjusting the pH value of such DIW is shown for supplying an acid-based chemical solution to DIW used as a raw material for ozone water, but it is not necessary to adjust the DIW used as a raw material for ozone water. pH value.
應該認為此次揭示的實施型態在任何方面都是例示並非用以限制者。實際上,上述實施型態可以以各種型態呈現。再者,上述實施型態在不脫離申請專利範圍和其主旨的情況下,即使以各種型態進行省略、替換和變更亦可。It should be considered that the implementation type disclosed this time is illustrative and not restrictive in any respect. In fact, the above-mentioned implementation types can be presented in various types. Furthermore, the above-mentioned embodiments may be omitted, replaced, and changed in various forms without departing from the scope of the patent application and the spirit thereof.
W:晶圓(基板之一例)
1:基板處理系統(基板處理裝置之一例)
6:臭氧水供給管線
7:稀釋液供給管線
7e:加熱器
8:IPA供給管線
9:循環管線
16:處理單元(基板處理部之一例)
18:控制部
21:槽體
22:純水供給管線
23:臭氧氣體供給管線
27:酸系藥液供給管線
51:背壓閥
54:加熱器
55:濃度計
91a:噴嘴(臭氧水吐出噴嘴之一例)
91aa:吐出口
91b:噴嘴(IPA吐出噴嘴之一例)
91ba:吐出口W: Wafer (an example of substrate)
1: Substrate processing system (an example of substrate processing equipment)
6: Ozone water supply pipeline
7:
[圖1]為表示與實施型態有關之基板處理系統之概略構成的示意圖。
[圖2]為表示與實施型態有關之基板處理系統之配管構成的示意圖。
[圖3]為表示實施型態所涉及之基板處理單元之構成例的示意圖。
[圖4]為表示實施型態所涉及之液供給部之構成例的概略剖面圖。
[圖5]為表示實施型態所涉及之液供給部之另外構成例的概略剖面圖。
[圖6]為表示實施型態之變形例1所涉及之基板處理系統之配管構成的示意圖。
[圖7]為表示實施型態之變形例2所涉及之基板處理系統之配管構成的示意圖。
[圖8]為表示實施型態之變形例3所涉及之基板處理系統之配管構成的示意圖。
[圖9]為表示實施型態所涉及之基板處理系統實行之基板處理之順序的流程圖。
[圖10]為表示實施型態所涉及之基板處理系統實行之臭氧水生成處理之順序的流程圖。[Fig. 1] is a schematic diagram showing a schematic configuration of a substrate processing system related to an implementation type.
[Fig. 2] is a schematic diagram showing the piping structure of the substrate processing system related to the implementation type.
[Fig. 3] is a schematic diagram showing a configuration example of a substrate processing unit according to an embodiment.
Fig. 4 is a schematic cross-sectional view showing a configuration example of a liquid supply unit according to an embodiment.
Fig. 5 is a schematic cross-sectional view showing another example of the structure of the liquid supply unit according to the embodiment.
Fig. 6 is a schematic diagram showing the piping configuration of the substrate processing system according to
1:基板處理系統(基板處理裝置之一例) 1: Substrate processing system (an example of substrate processing equipment)
5:臭氧水生成部 5: Ozone water generation department
6:臭氧水供給管線 6: Ozone water supply pipeline
6a:並列管線 6a: Parallel pipeline
6b:分歧管線 6b: branch pipeline
7:稀釋液供給管線 7: Diluent supply line
7a:DIW供給源 7a: DIW supply source
7b:閥體 7b: Valve body
7c:背壓閥 7c: Back pressure valve
7d:流量計 7d: Flow meter
7e:加熱器 7e: heater
8:IPA供給管線 8: IPA supply pipeline
8a:IPA供給源 8a: IPA supply source
8b:閥體 8b: Valve body
8c:背壓閥 8c: Back pressure valve
8d:流量計 8d: Flow meter
16:處理單元(基板處理部之一例) 16: Processing unit (an example of substrate processing section)
21:槽體 21: tank
22:純水供給管線 22: Pure water supply pipeline
22a:DIW供給源 22a: DIW supply source
22b:閥體 22b: Valve body
22c:背壓閥 22c: Back pressure valve
22d:流量計 22d: Flow meter
23:臭氧氣體供給管線 23: Ozone gas supply pipeline
24:第1管線 24: The first pipeline
25:槽體 25: tank
26:第2管線 26: Second pipeline
27:酸系藥液供給管線 27: Acid-based chemical liquid supply pipeline
27a:酸系藥液供給源 27a: Acid-based chemical liquid supply source
27b:閥體 27b: Valve body
27c:背壓閥 27c: Back pressure valve
27d:流量計 27d: Flow meter
28:合流部 28: Confluence Department
29:過濾器 29: filter
30:濃度計 30: Concentration meter
31:閥體 31: Valve body
32:臭氧氣體生成部 32: Ozone gas generation department
33:過濾器 33: filter
34:閥體 34: Valve body
35:逆止閥 35: check valve
36:氧氣供給管線 36: Oxygen supply line
36a:氧氣供給源 36a: Oxygen supply source
36b:背壓閥 36b: Back pressure valve
36c:閥體 36c: valve body
37:混合部 37: Mixing Department
38:泵浦 38: Pump
41:臭氧回收管線 41: Ozone recovery pipeline
42:背壓閥 42: Back pressure valve
43:氣液分離捕集器 43: Gas-liquid separation trap
44:閥體 44: Valve body
45:臭氧回收管線 45: Ozone recovery pipeline
46:臭氧氣體除去部 46: Ozone gas removal department
47:逆止閥 47: check valve
48:閥體 48: valve body
51:背壓閥 51: Back pressure valve
52:過濾器 52: filter
53:流量計 53: Flowmeter
54:加熱器 54: heater
55:濃度計 55: Concentration meter
56:閥體 56: Valve body
57:除去單元 57: Remove unit
61:背壓閥 61: Back pressure valve
62:流量計 62: Flowmeter
63:合流部 63: Confluence Department
64:合流部 64: Confluence Department
65:排出管線 65: discharge line
66:背壓閥 66: Back pressure valve
DR:排放部 DR: Emissions Department
EXH:排氣部 EXH: Exhaust
Claims (14)
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JP2000037695A (en) * | 1998-07-24 | 2000-02-08 | Kurita Water Ind Ltd | Apparatus for supplying ozone water |
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