TWI791956B - Substrate processing apparatus, and substrate processing method - Google Patents

Abstract

A substrate processing apparatus (100) processes a substrate (W) with an alkaline processing liquid. The substrate processing apparatus (100) includes a processing section (1), a supply unit (30), a recovery unit (40), and an inert gas supply section (60). The processing section (1) processes the substrate (W). The supply unit (30) includes a first accommodation section (31). The first accommodation section (31) accommodates the alkaline processing liquid that is to be supplied to the processing section (1). The recovery unit (40) includes a second accommodation section (41). The second accommodation section (41) accommodates the alkaline processing liquid recovered from the processing section (1). The inert gas supply section (60) supplies inert gas to at least one of the first accommodation section (31) and the second accommodation section (41).

Description

基板處理裝置以及基板處理方法 Substrate processing apparatus and substrate processing method

本發明係有關於一種基板處理裝置、基板處理方法以及半導體製造方法。 The present invention relates to a substrate processing device, a substrate processing method and a semiconductor manufacturing method.

在半導體製造中，於阻劑(resist)剝離工序使用鹼處理液作為阻劑剝離液。以阻劑剝離液而言，例如已知有氫氧化四甲銨(TMAH；tetra methyl ammonium hydroxide)(例如專利文獻1)。 In semiconductor manufacturing, an alkali treatment solution is used as a resist stripping solution in a resist stripping step. As a resist stripping liquid, tetramethylammonium hydroxide (TMAH; tetramethyl ammonium hydroxide) is known, for example (for example, patent document 1).

[先前技術文獻] [Prior Art Literature] [專利文獻] [Patent Document]

[專利文獻1]日本特開2003-140364號公報。 [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-140364.

鹼處理液係當空氣中的二氧化碳溶入時會生成碳酸鹽。結果，會有鹼處理液的阻劑剝離性能降低的可能性。 Alkaline treatment fluids generate carbonates when carbon dioxide in the air dissolves. As a result, the resist stripping performance of the alkali treatment liquid may decrease.

本發明係有鑑於上述課題而研創，目的在於提供一種能抑制鹼處理液與二氧化碳反應從而生成碳酸鹽之基板處理裝置、基板處理方法以及半導體製造方法。 The present invention was developed in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus, a substrate processing method, and a semiconductor manufacturing method capable of suppressing the reaction of an alkaline treatment liquid and carbon dioxide to generate carbonate.

本發明的基板處理裝置係藉由鹼處理液處理基板。前述基板處理裝置係具備處理部、供給單元、回收單元以及惰性氣體供給部。前述處理部係處理前述基板。前述供給單元係具有第一收容部。前述第一收容部係收容用以供給至前述處理部的前述鹼處理液。前述回收單元係具有第二收容部。前述第二收容部係收容從前述處理部回收的前述鹼處理液。前述惰性氣體供給部係對前述第一收容部以及前述第二收容部的至少一者供給惰性氣體。 The substrate processing device of the present invention processes the substrate with an alkali treatment solution. The aforementioned substrate processing apparatus includes a processing unit, a supply unit, a recovery unit, and an inert gas supply unit. The processing unit processes the substrate. The supply unit has a first storage part. The first storage unit stores the alkali treatment liquid to be supplied to the treatment unit. The recovery unit has a second storage unit. The second storage unit stores the alkaline treatment liquid recovered from the treatment unit. The said inert gas supply part supplies an inert gas to at least one of the said 1st storage part and the said 2nd storage part.

在實施形態之一中，前述基板處理裝置係進一步具備控制部。前述回收單元係進一步具有供給部。前述供給部係從前述第二收容部對前述第一收容部供給前述鹼處理液。前述控制部係控制前述供給部以及前述惰性氣體供給部。前述控制部係以下述方式控制前述惰性氣體供給部：與不使前述供給部動作之情形相比，在使前述供給部動作之情形中增加前述惰性氣體的供給量。 In one embodiment, the substrate processing apparatus further includes a control unit. The said recovery means further has a supply part. The supply unit supplies the alkaline treatment liquid from the second storage unit to the first storage unit. The control unit controls the supply unit and the inert gas supply unit. The control unit controls the inert gas supply unit so as to increase the supply amount of the inert gas when the supply unit is operated compared to when the supply unit is not operated.

在實施形態之一中，前述基板處理裝置係進一步具備返回配管部以及偵測部。前述返回配管部係連接前述處理部以及前述第二收容部。前述偵測部係偵測於前述返回配管部內是否存在有前述鹼處理液。前述控制部係以下述方式進行控制：在依據前述偵測部所偵測的結果判定成於前述返回配管內存在有前述鹼處理液之情形中，前述供給部開始動作。 In one embodiment, the substrate processing apparatus further includes a return piping unit and a detection unit. The return piping part is connected to the processing part and the second storage part. The detection part detects whether the alkali treatment liquid exists in the return pipe part. The control unit performs control in such a manner that when it is determined that the alkali treatment liquid exists in the return pipe based on the detection result of the detection unit, the supply unit starts to operate.

在實施形態之一中，前述惰性氣體供給部係具有計測部。前述計測部係計測供給至前述第一收容部或者前述第二收容部之前述惰性氣體的量。 In one embodiment, the inert gas supply unit has a measurement unit. The said measurement part measures the quantity of the said inert gas supplied to the said 1st storage part or the said 2nd storage part.

在實施形態之一中，前述處理部係進一步具備第一噴嘴以及第二噴嘴。前述第一噴嘴係對前述基板供給前述鹼處理液。前述第二噴嘴係對前述基板供給前述鹼處理液以及前述惰性氣體。 In one embodiment, the processing unit further includes a first nozzle and a second nozzle. The first nozzle supplies the alkali treatment liquid to the substrate. The second nozzle supplies the alkali treatment liquid and the inert gas to the substrate.

在實施形態之一中，前述處理部係進一步具有第一噴嘴以及第二噴嘴。前述第一噴嘴係對前述基板供給前述鹼處理液。前述第二噴嘴係對前述基板供給碳酸水以及惰性氣體。 In one aspect, the said processing part further has a 1st nozzle and a 2nd nozzle. The first nozzle supplies the alkali treatment liquid to the substrate. The second nozzle supplies carbonated water and an inert gas to the substrate.

在實施形態之一中，前述基板處理裝置係進一步具備第三收容部。前述第三收容部係收容從前述處理部回收的前述碳酸水。在前述第二噴嘴對前述基板供給前述碳酸水之情形中，前述碳酸水係被回收至前述第三收容部且前述碳酸水係不會被回收至前述第二收容部。 In one embodiment, the substrate processing apparatus further includes a third storage unit. The third storage unit stores the carbonated water recovered from the treatment unit. When the second nozzle supplies the carbonated water to the substrate, the carbonated water is recovered to the third storage unit and the carbonated water is not recovered to the second storage unit.

在實施形態之一中，進一步具備第一液體接住部、第二液體接住部以及移動部。前述第一液體接住部係接住已處理過前述基板後的前述鹼處理液。前述第二液體接住部係接住已處理過前述基板後的前述碳酸水。前述移動部係使前述第一液體接住部以及前述第二液體接住部移動。前述移動部係在藉由前述鹼處理液處理前述基板之情形中，移動前述第一液體接住部以使前述第一液體接住部接住前述鹼處理液。前述移動部係在前述第二噴嘴對前述基板供給前述碳酸水之情形中，移動前述第二液體接住部以使前述第二液體接住部接住前述碳酸水。 In one embodiment, a first liquid receiving part, a second liquid receiving part, and a moving part are further provided. The first liquid receiving part receives the alkali treatment liquid after the substrate has been processed. The aforementioned second liquid receiving part is for receiving the aforementioned carbonated water after the aforementioned substrate has been processed. The moving part moves the first liquid receiving part and the second liquid receiving part. The moving unit moves the first liquid receiving unit so that the first liquid receiving unit catches the alkaline treatment solution when the substrate is treated with the alkaline treatment solution. The moving part moves the second liquid receiving part so that the second liquid receiving part catches the carbonated water when the second nozzle supplies the carbonated water to the substrate.

在實施形態之一中，前述基板處理裝置係進一步具備控制部以及返回配管部。前述返回配管部係連接前述處理部以及前述第二收容部。前述返 回配管部係具有供給配管部以及排出配管部。前述供給配管部係將已處理過前述基板後的前述鹼處理液供給至前述第二收容部。前述排出配管部係將已處理過前述基板後的前述鹼處理液予以排出。前述控制部係控制前述供給配管部以及前述排出配管部。前述控制部係在前述處理部藉由前述鹼處理液開始前述基板的處理且在預定的期間內以已處理過前述基板的前述鹼處理液於前述排出配管部流動之方式進行控制，並在經過前述預定的期間後以已處理過前述基板後的前述鹼處理液於前述供給配管部流動之方式進行控制。 In one embodiment, the substrate processing apparatus further includes a control unit and a return piping unit. The return piping part is connected to the processing part and the second storage part. aforementioned return The return piping part has a supply piping part and a discharge piping part. The supply piping unit supplies the alkali treatment liquid after the substrate has been treated to the second storage unit. The discharge piping unit discharges the alkali treatment liquid after the substrate has been processed. The control unit controls the supply piping unit and the discharge piping unit. The control unit starts the processing of the substrate with the alkali treatment solution in the processing unit and controls the alkali treatment solution having processed the substrate to flow in the discharge piping unit for a predetermined period of time. After the predetermined period of time, control is performed so that the alkaline treatment liquid having processed the substrate flows through the supply piping section.

在實施形態之一中，前述基板處理裝置係進一步具備回收配管部。前述回收配管部係連接前述第一收容部以及前述第二收容部。前述惰性氣體供給部係對前述回收配管部供給惰性氣體。 In one embodiment, the substrate processing apparatus further includes a recovery piping unit. The recovery piping part is connected to the first storage part and the second storage part. The said inert gas supply part supplies an inert gas to the said recovery piping part.

本發明的基板處理方法係用以處理基板。前述基板處理方法係包含：供給工序，係從用以收容鹼處理液之第一收容部將前述鹼處理液供給至處理部；處理工序，係前述處理部藉由前述鹼處理液處理前述基板；以及回收工序，係將已處理過前述基板的前述鹼處理液從前述處理部回收至第二收容部。對前述第一收容部以及前述第二收容部的至少一者供給惰性氣體。 The substrate processing method of the present invention is used for processing a substrate. The aforementioned substrate processing method includes: a supplying step of supplying the aforementioned alkaline treatment solution to a processing unit from a first container for storing the alkaline treatment solution; a treatment step of treating the aforementioned substrate with the aforementioned alkaline treatment solution by the aforementioned processing unit; And the recovering step is recovering the alkaline treatment solution that has processed the substrate from the processing unit to the second storage unit. An inert gas is supplied to at least one of the first storage unit and the second storage unit.

本發明的半導體製造方法係用以處理半導體基板並製造屬於處理後的前述半導體基板的半導體。前述半導體製造方法係包含：供給工序，係從用以收容鹼處理液之第一收容部將前述鹼處理液供給至處理部；處理工序，係前述處理部藉由前述鹼處理液處理前述半導體基板；以及回收工序，係將已處理過前述半導體基板的前述鹼處理液從前述處理部回收至第二收容部。對前述第一收容部以及前述第二收容部的至少一者供給惰性氣體。 The semiconductor manufacturing method of the present invention is for processing a semiconductor substrate and manufacturing a semiconductor belonging to the processed semiconductor substrate. The aforementioned semiconductor manufacturing method includes: a supply step of supplying the alkali treatment solution to the processing unit from a first container for storing the alkali treatment solution; and a treatment step of treating the semiconductor substrate with the alkali treatment solution in the treatment unit and a recovery step of recovering the alkaline treatment solution that has processed the semiconductor substrate from the treatment unit to the second storage unit. An inert gas is supplied to at least one of the first storage unit and the second storage unit.

本發明的基板處理裝置係能抑制鹼處理液與二氧化碳反應從而生成碳酸鹽。 The substrate processing device of the present invention can suppress the reaction of alkali processing liquid and carbon dioxide to generate carbonate.

1:處理單元(處理部) 1: Processing unit (processing part)

2:記憶部 2: memory department

3:控制部 3: Control Department

5:藥液櫃 5: Liquid medicine cabinet

6:腔室 6: chamber

10:自轉夾具 10: Rotation fixture

11:夾具銷 11: Fixture pin

12:自轉基座 12: Rotation base

13:自轉馬達 13: Rotation motor

14:第一罩(第一液體接住部) 14: the first cover (the first liquid receiving part)

14a,15a:上端 14a, 15a: upper end

15:第二罩(第二液體接住部) 15: Second cover (second liquid receiving part)

16:移動部 16:Mobile Department

21:噴嘴(第一噴嘴) 21: Nozzle (first nozzle)

22,24:噴嘴移動單元 22,24: Nozzle moving unit

23:噴嘴(第二噴嘴) 23: Nozzle (second nozzle)

28:對向構件 28: Opposite components

30:供給單元 30: Supply unit

31:供給槽(第一收容部) 31: Supply tank (first storage part)

32:循環配管 32:Circulation piping

32a:上流側端部 32a: Upstream end

32b:下游側端部 32b: Downstream side end

33:循環泵 33:Circulation pump

34:循環過濾器 34: Loop filter

35:循環加熱器 35:Circulation heater

40:回收單元 40: Recovery unit

41:回收槽(第二收容部) 41: Recovery Tank (Second Containment Section)

44:回收泵(供給部) 44: Recovery pump (supply part)

51:返回配管部 51: Return to the piping department

52:回收配管部 52: Recovery piping department

60,60a,60b:惰性氣體供給部 60, 60a, 60b: Inert gas supply part

62:流量計(計測部) 62: Flow meter (measurement department)

70:排出槽 70: discharge slot

80:排出槽(第三收容部) 80: Exhaust tank (third storage part)

100:基板處理裝置 100: Substrate processing device

100a:框體 100a: frame

515:偵測部 515: Detection department

A1:旋轉軸 A1: Axis of rotation

A2,A3:轉動軸線 A2, A3: axis of rotation

C:承載器 C: carrier

CR:中心機器人 CR: Central Robotics

IR:索引機器人 IR: Index Robot

LP:裝載埠 LP: load port

P1,P2,P3:供給配管 P1, P2, P3: supply piping

P4,P7:氣體供給配管 P4, P7: Gas supply piping

P5:配管 P5: Piping

P6:分支配管 P6: branch pipe

P8:供給配管部 P8: Supply piping department

P9:排出配管部 P9: Discharge piping part

P10:配管部 P10: Piping Department

U:塔 U: tower

V1,V2,V3,V4,V5,V6,V31,V32,V33,V41:閥 V1, V2, V3, V4, V5, V6, V31, V32, V33, V41: Valve

W:基板 W: Substrate

[圖1]係示意性地顯示本發明的實施形態一的基板處理裝置的構成之俯視圖。 [ Fig. 1] Fig. 1 is a plan view schematically showing the structure of a substrate processing apparatus according to Embodiment 1 of the present invention.

[圖2]係示意性地顯示處理單元的構成之側視圖。 [ Fig. 2 ] is a side view schematically showing the configuration of a processing unit.

[圖]3中，(a)係顯示本實施形態的基板處理方法之流程圖，(b)係顯示阻劑剝離處理方法之流程圖。 [FIG.] 3, (a) is a flowchart which shows the substrate processing method of this embodiment, and (b) is a flowchart which shows the resist stripping processing method.

[圖4]係示意性地顯示本發明的實施形態一的基板處理裝置的構成之側視圖。 [ Fig. 4] Fig. 4 is a side view schematically showing the structure of a substrate processing apparatus according to Embodiment 1 of the present invention.

[圖5]係示意性地顯示本發明的實施形態二的基板處理裝置的構成之側視圖。 [ Fig. 5] Fig. 5 is a side view schematically showing the structure of a substrate processing apparatus according to Embodiment 2 of the present invention.

[圖6]係示意性地顯示本發明的實施形態三的基板處理裝置的構成之側視圖。 [ Fig. 6] Fig. 6 is a side view schematically showing the structure of a substrate processing apparatus according to Embodiment 3 of the present invention.

[圖7]係示意性地顯示本發明的實施形態四的基板處理裝置的構成之側視圖。 [ Fig. 7] Fig. 7 is a side view schematically showing the structure of a substrate processing apparatus according to Embodiment 4 of the present invention.

[圖8]係示意性地顯示本發明的變化例的基板處理裝置的構成之側視圖。 [ Fig. 8] Fig. 8 is a side view schematically showing the structure of a substrate processing apparatus according to a modified example of the present invention.

以下，參照圖式說明本發明的實施形態。此外，針對圖式中相同或者相當的部分附上相同的元件符號且不重複說明。此外，在本發明的實施形態中，X軸、Y軸以及Z軸係彼此正交，X軸以及Y軸係與水平方向平行，Z軸係與鉛直方向平行。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, the same reference numerals are attached to the same or corresponding parts in the drawings, and descriptions will not be repeated. In addition, in the embodiment of the present invention, the X-axis, the Y-axis, and the Z-axis are perpendicular to each other, the X-axis and the Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

[實施形態一] [Implementation Form 1]

參照圖1說明本發明的實施形態一的基板處理裝置100。圖1係示意性地顯示本發明的實施形態一的基板處理裝置100的構成之俯視圖。 A substrate processing apparatus 100 according to Embodiment 1 of the present invention will be described with reference to FIG. 1 . FIG. 1 is a plan view schematically showing the structure of a substrate processing apparatus 100 according to Embodiment 1 of the present invention.

如圖1所示，基板處理裝置100為葉片式的裝置，用以逐片地處理基板W。基板處理裝置100係例如為使用於從經過蝕刻處理的基板W的表面剝離已不需要的阻劑之裝置。詳細而言，基板處理裝置100係藉由鹼處理液處理基板W。此外，基板處理裝置100係對表面存在有金屬膜的基板W進行處理。 As shown in FIG. 1 , the substrate processing device 100 is a blade-type device for processing substrates W one by one. The substrate processing apparatus 100 is, for example, an apparatus used to peel unnecessary resist from the surface of the substrate W that has been etched. In detail, the substrate processing apparatus 100 processes the substrate W with an alkaline processing solution. In addition, the substrate processing apparatus 100 processes a substrate W on which a metal film exists on the surface.

基板W係例如為矽晶圓、樹脂基板、玻璃基板或者石英基板。在本實施形態中，基板W為多晶矽(polysilicon)晶圓。在本實施形態中例示了圓板狀的半導體基板作為基板W。然而，基板W的形狀並未特別地限定。基板W亦可形成為例如矩形狀。 The substrate W is, for example, a silicon wafer, a resin substrate, a glass substrate or a quartz substrate. In this embodiment, the substrate W is a polysilicon wafer. In this embodiment, a disk-shaped semiconductor substrate is illustrated as the substrate W. As shown in FIG. However, the shape of the substrate W is not particularly limited. The substrate W may also be formed in, for example, a rectangular shape.

基板處理裝置100係具備複數個裝載埠(load port)LP、複數個處理單元1、記憶部2以及控制部3。此外，處理單元1係相當於「處理部」的一例。 The substrate processing apparatus 100 includes a plurality of load ports LP, a plurality of processing units 1 , a storage unit 2 and a control unit 3 . In addition, the processing unit 1 corresponds to an example of a "processing part".

裝載埠LP係保持已收容了基板W的承載器(carrier)C。處理單元1係藉由處理流體處理從裝載埠LP搬運而來的基板W。處理流體係例如為處理液或者處理氣體。 The load port LP holds a carrier (carrier) C in which a substrate W has been accommodated. The processing unit 1 processes the substrate W transported from the load port LP with a processing fluid. The treatment fluid system is, for example, a treatment liquid or a treatment gas.

記憶部2係包含ROM(Read Only Memory；唯讀記憶體)以及RAM(Random Access Memory；快閃記憶體)般的主記憶裝置(例如半導體記憶 體)，且亦可進一步包含輔助記憶裝置(例如硬碟機(hard disk drive))。主記憶裝置以及/或者輔助記憶裝置係記憶藉由控制部3所執行的各種電腦程式。 The memory section 2 is composed of ROM (Read Only Memory; read-only memory) and RAM (Random Access Memory; flash memory) like main memory device (such as semiconductor memory body), and may further include an auxiliary memory device (such as a hard disk drive). The main storage device and/or the auxiliary storage device store various computer programs executed by the control unit 3 .

控制部3係包含CPU(Central Processing Unit；中央處理單元)以及MPU(Micro Processing Unit；微處理單元)般的處理器(processor)。控制部3係控制基板處理裝置100的各個要素。 The control unit 3 is a processor (processor) including a CPU (Central Processing Unit; Central Processing Unit) and an MPU (Micro Processing Unit; Micro Processing Unit). The control unit 3 controls each element of the substrate processing apparatus 100 .

基板處理裝置100係進一步具備搬運機器人。搬運機器人係在裝載埠LP與處理單元1之間處理基板W。搬運機器人係包含索引機器人(indexer robot)IR以及中心機器人(center robot)CR。索引機器人IR係在裝載埠LP與中心機器人CR之間搬運基板W。中心機器人CR係在索引機器人IR與處理單元1之間搬運基板W。索引機器人IR以及中心機器人CR係分別包含用以支撐基板W之手部(hand)。 The substrate processing apparatus 100 further includes a transfer robot. The transfer robot processes the substrate W between the load port LP and the processing unit 1 . The transfer robot system includes an indexer robot (indexer robot) IR and a center robot (center robot) CR. The index robot IR transfers the substrate W between the load port LP and the center robot CR. The central robot CR transports the substrate W between the index robot IR and the processing unit 1 . The index robot IR and the center robot CR each include a hand for supporting the substrate W.

基板處理裝置100係進一步具備藥液櫃(chemicals cabinet)5以及複數個供給單元30。處理單元1以及複數個供給單元30係配置於基板處理裝置100的框體100a的內部。藥液櫃5係配置於基板處理裝置100的框體100a的外部。藥液櫃5亦可配置於基板處理裝置100的側方。此外，藥液櫃5亦可配置於設置有基板處理裝置100的無塵室(cleaning room)的下方(地下)。 The substrate processing apparatus 100 further includes a chemicals cabinet 5 and a plurality of supply units 30 . The processing unit 1 and the plurality of supply units 30 are arranged inside the housing 100 a of the substrate processing apparatus 100 . The chemical solution tank 5 is disposed outside the housing 100 a of the substrate processing apparatus 100 . The liquid medicine cabinet 5 can also be arranged on the side of the substrate processing apparatus 100 . In addition, the liquid chemical cabinet 5 may also be disposed below (underground) a clean room (cleaning room) in which the substrate processing apparatus 100 is installed.

複數個處理單元1係構成上下層疊的塔U。塔U係設置有複數個。複數個塔U係以俯視觀看時圍繞中心機器人CR之方式配置。 A plurality of processing units 1 constitute a tower U stacked up and down. There are a plurality of tower U series installed. A plurality of towers U are arranged so as to surround the central robot CR in a plan view.

在本實施形態中，於塔U層疊有三個處理單元1。此外，塔U係設置四個。此外，構成塔U之處理單元1的個數並未特別限定。此外，塔U的個數亦未特別限定。 In this embodiment, three processing units 1 are stacked in the column U. In addition, there are four U-type towers. In addition, the number of processing units 1 constituting the column U is not particularly limited. In addition, the number of towers U is not particularly limited.

複數個供給單元30係分別與複數個塔U對應。藥液櫃5內的藥液係經由供給單元30供給至與供給單元30對應的塔U。結果，對塔U所含有的全部的處理單元1供給藥液。 The plurality of supply units 30 correspond to the plurality of columns U, respectively. The chemical solution in the chemical solution tank 5 is supplied to the column U corresponding to the supply unit 30 via the supply unit 30 . As a result, the chemical solution is supplied to all the processing units 1 included in the column U.

參照圖1以及圖2說明處理單元1。圖2係示意性地顯示處理單元1的構成之側視圖。 The processing unit 1 will be described with reference to FIGS. 1 and 2 . FIG. 2 is a side view schematically showing the configuration of the processing unit 1 .

如圖2所示，基板處理裝置100係具備處理單元1、供給單元30、回收單元40、返回配管部51、回收配管部52、惰性氣體供給部60a以及惰性氣體供給部60b。 As shown in FIG. 2, the substrate processing apparatus 100 includes a processing unit 1, a supply unit 30, a recovery unit 40, a return piping unit 51, a recovery piping unit 52, an inert gas supply unit 60a, and an inert gas supply unit 60b.

處理單元1係包含腔室(chamber)6、自轉夾具(spin chuck)10、第一罩(cup)14以及第二罩15。 The processing unit 1 includes a chamber 6 , a spin chuck 10 , a first cup 14 and a second cup 15 .

腔室6係具有略箱形狀。腔室6係收容基板W。基板W係例如為略圓板狀。在此，基板處理裝置100係用以逐片地處理基板W之葉片型的裝置，且於腔室6逐片地收容有基板W。 The chamber 6 has a slightly box shape. The chamber 6 accommodates the substrate W. As shown in FIG. The substrate W is, for example, substantially disc-shaped. Here, the substrate processing apparatus 100 is a blade-type apparatus for processing the substrates W one by one, and the substrates W are accommodated in the chamber 6 one by one.

自轉夾具10係配置於腔室6內。自轉夾具10係一邊水平地保持基板W一邊使基板W繞著旋轉軸A1旋轉。旋轉軸A1為鉛直的軸，並通過基板W的中央部。 The self-rotating jig 10 is disposed in the chamber 6 . The autorotation jig 10 rotates the substrate W around the rotation axis A1 while holding the substrate W horizontally. The rotation axis A1 is a vertical axis and passes through the center of the substrate W. As shown in FIG.

自轉夾具10係包含複數個夾具銷(chuck pin)11、自轉基座(spin base)12、自轉馬達(spin motor)13、第一罩14、第二罩15以及移動部16。此外，第一罩14係相當於「第一液體接住部」的一例。此外，第二罩15係相當於「第二液體接住部」的一例。 The spin clamp 10 includes a plurality of chuck pins 11 , a spin base 12 , a spin motor 13 , a first cover 14 , a second cover 15 and a moving part 16 . In addition, the 1st cover 14 corresponds to an example of a "1st liquid receiving part". In addition, the second cover 15 corresponds to an example of the "second liquid receiving part".

自轉基座12為圓板狀的構件。複數個夾具銷11係在自轉基座12上以水平的姿勢保持基板W。自轉馬達13係使複數個夾具銷11旋轉，藉此使基板W繞著旋轉軸A1旋轉。 The spin base 12 is a disc-shaped member. The plurality of jig pins 11 hold the substrate W in a horizontal posture on the rotation base 12 . The autorotation motor 13 rotates the plurality of chuck pins 11, thereby rotating the substrate W around the rotation axis A1.

本實施形態的自轉夾具10為夾持式的夾具(chuck)，用以使複數個夾具銷11接觸至基板W的外周面。然而，本發明並未限定於此。自轉夾具10亦可為真空式的夾具。真空式的夾具係使屬於非器件(non-device)形成面之基板W的背面(下表面)吸附至自轉基座12的上表面，藉此水平地保持基板W。 The self-rotating jig 10 of this embodiment is a clamping type chuck, and is used to make a plurality of chuck pins 11 contact the outer peripheral surface of the substrate W. As shown in FIG. However, the present invention is not limited thereto. The self-rotating clamp 10 can also be a vacuum clamp. The vacuum-type chuck holds the substrate W horizontally by suctioning the back surface (lower surface) of the substrate W which is a non-device formation surface to the upper surface of the spin base 12 .

第一罩14與第二罩15係接住從基板W排出的處理液。詳細而言，第一罩14係接住已處理過基板W後的鹼處理液。第二罩15係接住已處理過基板W後的碳酸水。 The first cover 14 and the second cover 15 receive the processing liquid discharged from the substrate W. As shown in FIG. Specifically, the first cover 14 receives the alkali treatment liquid after the substrate W has been treated. The second cover 15 catches the carbonated water after the substrate W has been processed.

移動部16係使第一罩14以及第二罩15在上升位置與下降位置之間升降。在第一罩14位於上升位置時，第一罩14的上端14a係位於比自轉夾具10還上方。在第一罩14位於下降位置時，第一罩14的上端14a係位於比自轉夾具10還下方。此外，在第二罩15位於上升位置時，第二罩15的上端15a係位於比自轉夾具10還上方。在第二罩15位於下降位置時，第二罩15的上端15a係位於比自轉夾具10還下方。 The moving part 16 moves the first cover 14 and the second cover 15 up and down between the raised position and the lowered position. When the first cover 14 is located at the raised position, the upper end 14 a of the first cover 14 is located above the rotation jig 10 . When the first cover 14 is at the lowered position, the upper end 14 a of the first cover 14 is located below the rotation jig 10 . In addition, when the second cover 15 is located at the raised position, the upper end 15 a of the second cover 15 is located above the rotation jig 10 . When the second cover 15 is located at the lowered position, the upper end 15 a of the second cover 15 is located below the rotation jig 10 .

在對基板W供給處理液時，第一罩14以及第二罩15係位於上升位置。 When the processing liquid is supplied to the substrate W, the first cover 14 and the second cover 15 are located at the raised position.

處理單元1係進一步包含噴嘴21、噴嘴移動單元22、供給配管P1以及閥V1。 The processing unit 1 further includes a nozzle 21, a nozzle moving unit 22, a supply pipe P1, and a valve V1.

噴嘴21係朝被自轉夾具10保持的基板W噴出藥液。此外，噴嘴21係相當於「第一噴嘴」的一例。藥液係例如為鹼處理液。鹼處理液係包含例如 氫氧化四甲銨(TMAH)。此外，鹼處理液亦可為氫氧化鉀(KOH；potassium hydroxide)。 The nozzle 21 ejects the chemical solution toward the substrate W held by the rotary chuck 10 . In addition, the nozzle 21 corresponds to an example of "the first nozzle". The chemical liquid system is, for example, an alkali treatment liquid. Alkaline treatment solutions include, for example Tetramethylammonium Hydroxide (TMAH). In addition, the alkaline treatment solution may also be potassium hydroxide (KOH; potassium hydroxide).

供給配管P1係對噴嘴21供給鹼處理液。閥V1係切換開始對噴嘴21供給鹼處理液以及停止對噴嘴21供給鹼處理液。 The supply pipe P1 supplies the alkali treatment liquid to the nozzle 21 . The valve V1 switches between starting supply of the alkali treatment liquid to the nozzle 21 and stopping supply of the alkali treatment liquid to the nozzle 21 .

噴嘴移動單元22係使噴嘴21在處理位置與退避位置之間移動。處理位置係指噴嘴21朝基板W噴出藥液之位置。退避位置係指噴嘴21已從基板W離開之位置。噴嘴移動單元22係例如使噴嘴21繞著轉動軸線A2迴旋，藉此使噴嘴21移動。轉動軸線A2為鉛直的軸，且位於第一罩14以及第二罩15的周邊。 The nozzle moving unit 22 moves the nozzle 21 between the processing position and the retracted position. The processing position refers to the position where the nozzle 21 sprays the chemical liquid toward the substrate W. As shown in FIG. The retracted position refers to a position where the nozzle 21 is separated from the substrate W. As shown in FIG. The nozzle moving unit 22 moves the nozzle 21 by turning the nozzle 21 around the rotation axis A2, for example. The rotation axis A2 is a vertical axis and is located around the first cover 14 and the second cover 15 .

處理單元1係進一步包含噴嘴23、噴嘴移動單元24、供給配管P2、供給配管P3、閥V2以及閥V3。 The processing unit 1 further includes a nozzle 23, a nozzle moving unit 24, a supply pipe P2, a supply pipe P3, a valve V2, and a valve V3.

噴嘴23係朝被自轉夾具10保持的基板W噴出碳酸水以及氮氣。此外，噴嘴23係相當於「第二噴嘴」的一例。 The nozzle 23 sprays carbonated water and nitrogen gas toward the substrate W held by the rotary chuck 10 . In addition, the nozzle 23 corresponds to an example of a "second nozzle".

供給配管P2係對噴嘴23供給碳酸水。閥V2係切換開始對噴嘴23供給碳酸水以及停止對噴嘴23供給碳酸水。 The supply pipe P2 supplies carbonated water to the nozzle 23 . The valve V2 switches between starting supply of carbonated water to the nozzle 23 and stopping supply of carbonated water to the nozzle 23 .

供給配管P3係對噴嘴23供給氮氣。閥V3係切換開始對噴嘴23供給氮氣以及停止對噴嘴23供給氮氣。 The supply pipe P3 supplies nitrogen gas to the nozzle 23 . The valve V3 switches between starting supply of nitrogen gas to the nozzle 23 and stopping supply of nitrogen gas to the nozzle 23 .

噴嘴移動單元24係使噴嘴23在處理位置與退避位置之間移動。處理位置係指噴嘴23朝基板W噴出藥液之位置。退避位置係指噴嘴23已從基板W離開之位置。噴嘴移動單元24係例如使噴嘴23繞著轉動軸線A3迴旋，藉此使噴嘴23移動。轉動軸線A3為鉛直的軸，且位於第一罩14以及第二罩15的周邊。 The nozzle moving unit 24 moves the nozzle 23 between the processing position and the retracted position. The processing position refers to the position where the nozzle 23 sprays the chemical solution toward the substrate W. As shown in FIG. The withdrawn position refers to a position where the nozzle 23 is separated from the substrate W. As shown in FIG. The nozzle moving unit 24 moves the nozzle 23 by turning the nozzle 23 around the rotation axis A3, for example. The rotation axis A3 is a vertical axis and is located around the first cover 14 and the second cover 15 .

供給單元30係對處理單元1供給鹼處理液。供給單元30係具有供給槽31。供給槽31係收容用以供給至處理單元1的鹼處理液。供給單元30的詳細說明係參照圖4並容後詳述。此外，供給槽31係相當於「第一收容部」的一例。 The supply unit 30 supplies the alkali treatment liquid to the treatment unit 1 . The supply unit 30 has a supply tank 31 . The supply tank 31 accommodates the alkaline treatment liquid to be supplied to the treatment unit 1 . The detailed description of the supply unit 30 refers to FIG. 4 and will be described in detail later. In addition, the supply tank 31 is corresponded to an example of a "1st storage part."

回收單元40係從處理單元1回收已處理過基板W的鹼處理液。回收單元40係具有回收槽41。回收槽41係收容已從處理單1元回收的鹼處理液。回收單元40的詳細說明係參照圖4並容後詳述。此外，回收槽41係相當於「第二收容部」的一例。 The recovery unit 40 recovers the alkaline treatment liquid on which the substrate W has been processed from the treatment unit 1 . The recovery unit 40 has a recovery tank 41 . The recovery tank 41 stores the alkaline treatment liquid recovered from the treatment unit 1 . The detailed description of the recovery unit 40 refers to FIG. 4 and will be described in detail later. In addition, the recovery tank 41 is equivalent to an example of a "second storage part".

返回配管部51係連接處理單元1以及回收槽41。因此，已藉由處理單元1已處理過基板W的鹼處理液係於返回配管部51流動並被回收至回收槽41。 The return piping part 51 is connected to the processing unit 1 and the recovery tank 41 . Therefore, the alkaline processing solution that has processed the substrate W by the processing unit 1 flows through the return piping portion 51 and is recovered to the recovery tank 41 .

回收配管部52係連接供給槽31以及回收槽41。因此，被收容於回收槽41且已處理過基板W的鹼處理液係於回收配管部52流動並被回收至供給槽31。 The recovery piping section 52 is connected to the supply tank 31 and the recovery tank 41 . Therefore, the alkaline treatment liquid that has been stored in the recovery tank 41 and has processed the substrate W flows through the recovery piping portion 52 and is recovered to the supply tank 31 .

惰性氣體供給部60a係對供給槽31供給惰性氣體。惰性氣體係相對於鹼處理液為惰性的氣體。惰性氣體係包含例如氮氣。此外，惰性氣體亦可為氬氣。惰性氣體的流量較佳為例如5LPM(公升/分鐘)以上。 The inert gas supply unit 60 a supplies inert gas to the supply tank 31 . The inert gas system is an inert gas with respect to the alkali treatment liquid. Inert gas systems include, for example, nitrogen. In addition, the inert gas may also be argon. The flow rate of the inert gas is preferably, for example, 5 LPM (liter/minute) or more.

惰性氣體供給部60b係對回收單元40供給惰性氣體。惰性氣體係相對於鹼處理液為惰性的氣體。惰性氣體係包含例如氮氣。此外，惰性氣體亦可為氬氣。惰性氣體的流量較佳為例如5LPM(公升/分鐘)以上。 The inert gas supply unit 60 b supplies inert gas to the recovery unit 40 . The inert gas system is an inert gas with respect to the alkali treatment liquid. Inert gas systems include, for example, nitrogen. In addition, the inert gas may also be argon. The flow rate of the inert gas is preferably, for example, 5 LPM (liter/minute) or more.

接著，參照圖1、圖2、圖3中的(a)以及圖3中的(b)說明本實施形態的基板處理裝置100所執行的基板處理方法。圖3中的(a)係顯示本實施形態的基板處理方法之流程圖。圖3中的(b)係顯示阻劑剝離處理方法之流程圖。如圖3中 的(a)所示，本實施形態的基板處理方法係包含步驟S1至步驟S5。如圖3中的(b)所示，阻劑剝離處理方法係包含步驟S21至步驟S23。 Next, a substrate processing method executed by the substrate processing apparatus 100 of the present embodiment will be described with reference to FIGS. 1 , 2 , (a) in FIG. 3 , and (b) in FIG. 3 . (a) in FIG. 3 is a flow chart showing the substrate processing method of this embodiment. (b) in FIG. 3 is a flowchart showing a resist stripping treatment method. As shown in Figure 3 As shown in (a), the substrate processing method of this embodiment includes step S1 to step S5. As shown in (b) of FIG. 3 , the resist stripping treatment method includes step S21 to step S23 .

如圖3中的(a)所示，在基板處理裝置100處理基板W之情形中，首先，基板W係被搬入至腔室6(步驟S1)。詳細而言，搬運機器人係將基板W搬入至腔室6。此外，在本實施形態中，基板W為蝕刻處理完畢且形成有阻劑的基板。被搬入的基板W係被自轉夾具10保持。 As shown in (a) of FIG. 3 , in the case where the substrate W is processed by the substrate processing apparatus 100 , first, the substrate W is carried into the chamber 6 (step S1 ). Specifically, the transfer robot carries the substrate W into the chamber 6 . In addition, in this embodiment, the board|substrate W is a board|substrate in which etching process was completed and the resist was formed. The loaded substrate W is held by the autorotation jig 10 .

在自轉夾具10保持基板W後，進行阻劑剝離處理(步驟S2)。如圖3中的(b)所示，在阻劑剝離處理中，首先進行供給處理(步驟S21)。詳細而言，從供給槽31將鹼處理液供給至處理單元1。詳細而言，噴嘴21一邊以轉動軸線A2作為中心轉動一邊噴出鹼處理液。噴嘴21係噴出鹼處理液直至至少基板W的上表面的全部區域被鹼處理液覆蓋為止。 After the substrate W is held by the rotary jig 10, a resist peeling process is performed (step S2). As shown in (b) of FIG. 3 , in the resist stripping process, first, a supply process is performed (step S21 ). Specifically, the alkali treatment liquid is supplied to the treatment unit 1 from the supply tank 31 . Specifically, the nozzle 21 discharges the alkali treatment liquid while rotating about the rotation axis A2. The nozzle 21 sprays the alkali treatment liquid until at least the entire upper surface of the substrate W is covered with the alkali treatment liquid.

進行了供給處理後，再進行鹼液體處理(步驟S22)。詳細而言，處理單元1係藉由鹼處理液處理基板W。詳細而言，藉由鹼處理液處理基板W從而剝離基板W的表面的阻劑。 After the supply process is performed, the alkali liquid process is performed again (step S22). Specifically, the processing unit 1 processes the substrate W with an alkaline processing solution. Specifically, the resist on the surface of the substrate W is peeled off by treating the substrate W with an alkaline treatment solution.

接著，進行回收處理(步驟S23)。詳細而言，將已處理過基板W的鹼處理液從處理單元1回收至回收槽41。 Next, recovery processing is performed (step S23). Specifically, the alkali treatment liquid that has processed the substrate W is recovered from the treatment unit 1 to the recovery tank 41 .

當結束阻劑剝離處理(步驟S2)時，在步驟S3中進行洗淨處理。詳細而言，噴嘴23係一邊以轉動軸線A3作為中心轉動一邊噴出碳酸水以及氮氣。結果，洗淨基板W。 When the resist stripping process (step S2) is finished, cleaning process is performed in step S3. Specifically, the nozzle 23 sprays carbonated water and nitrogen gas while rotating about the rotation axis A3. As a result, the substrate W is cleaned.

在步驟S4中使基板W乾燥。 The substrate W is dried in step S4.

在步驟S5中，使基板W停止旋轉後，從腔室6搬出基板W並結束圖3中的(a)以及圖3中的(b)所示的處理。 In step S5 , after the rotation of the substrate W is stopped, the substrate W is unloaded from the chamber 6 and the processing shown in FIG. 3( a ) and FIG. 3( b ) is terminated.

此外，在實施形態一的半導體製造方法中，藉由包含步驟S1至步驟S5以及步驟S21至步驟S23的基板處理方法處理蝕刻處理完畢且形成有阻劑的半導體基板(以下稱為基板W)，藉此製造屬於處理後的半導體基板之半導體。 In addition, in the semiconductor manufacturing method of Embodiment 1, the semiconductor substrate (hereinafter referred to as the substrate W) after the etching process and formed with the resist is processed by the substrate processing method including steps S1 to S5 and steps S21 to S23, A semiconductor which is a processed semiconductor substrate is thereby produced.

此外，在本實施形態中，雖然基板處理裝置100係針對蝕刻處理完畢且形成有阻劑的基板W進行了阻劑剝離處理，但本發明並未限定於此。例如，亦可在基板處理裝置100中進行蝕刻處理。 In addition, in the present embodiment, although the substrate processing apparatus 100 has performed the resist stripping process on the substrate W on which the resist has been etched and formed, the present invention is not limited thereto. For example, etching may be performed in the substrate processing apparatus 100 .

參照圖4進一步說明基板處理裝置100。圖4係示意性地顯示本發明的實施形態一的基板處理裝置100的構成之側視圖。 The substrate processing apparatus 100 will be further described with reference to FIG. 4 . FIG. 4 is a side view schematically showing the structure of the substrate processing apparatus 100 according to Embodiment 1 of the present invention.

如圖4所示，供給單元30係具有供給槽31，且進一步具有循環配管32、循環泵(circulation pump)33、循環過濾器34、循環加熱器35、氣體供給配管P4、配管P5、閥V31、閥V32以及閥V33。 As shown in FIG. 4, the supply unit 30 has a supply tank 31, and further includes a circulation pipe 32, a circulation pump (circulation pump) 33, a circulation filter 34, a circulation heater 35, a gas supply pipe P4, a pipe P5, and a valve V31. , valve V32 and valve V33.

供給槽31係收容鹼處理液。循環配管32為管狀的構件。於循環配管32內形成有使鹼處理液循環的循環路徑。循環配管32係具有上流側端部32a以及下游側端部32b。循環配管32係連通於供給槽31。具體而言，循環配管32的上游側端部32a以及下游側端部32b係連通於供給槽31。 The supply tank 31 accommodates the alkali treatment liquid. The circulation piping 32 is a tubular member. A circulation path for circulating the alkali treatment liquid is formed in the circulation piping 32 . The circulation pipe 32 has an upstream end 32a and a downstream end 32b. The circulation pipe 32 communicates with the supply tank 31 . Specifically, the upstream end 32 a and the downstream end 32 b of the circulation pipe 32 communicate with the supply tank 31 .

循環泵33係將供給槽31內的鹼處理液輸送至循環配管32。當循環泵33動作時，供給槽31內的鹼處理液係被輸送至循環配管32的上游側端部32a。被輸送至上游側端部32a的鹼處理液係於循環配管32內被運送，並從下游側端部32b被排出至供給槽31。循環泵33持續動作，藉此鹼處理液從上游側端部32a朝下游側端部32b持續地於循環配管32內流動。結果，鹼處理液係於循環配管32循環。 The circulation pump 33 sends the alkaline treatment liquid in the supply tank 31 to the circulation pipe 32 . When the circulation pump 33 operates, the alkaline treatment solution in the supply tank 31 is sent to the upstream end portion 32 a of the circulation pipe 32 . The alkali treatment liquid sent to the upstream side end part 32a is sent in the circulation piping 32, and is discharged to the supply tank 31 from the downstream side end part 32b. As the circulation pump 33 continues to operate, the alkaline treatment liquid continuously flows in the circulation pipe 32 from the upstream side end 32a toward the downstream side end 32b. As a result, the alkali treatment liquid circulates through the circulation piping 32 .

循環過濾器34係從於循環配管32循環的鹼處理液去除微粒(particle)般的異物。循環加熱器35係加熱鹼處理液，藉此調整鹼處理液的溫度。循環加熱器35係將鹼處理液的溫度保持成例如比室溫還高的固定的溫度(例如60℃)。於循環配管32循環的鹼處理液的溫度係藉由循環加熱器35而被保持成固定的溫度。 The circulation filter 34 removes particle-like foreign substances from the alkaline treatment liquid circulated through the circulation pipe 32 . The circulation heater 35 heats the alkali treatment liquid, thereby adjusting the temperature of the alkali treatment liquid. The circulation heater 35 maintains the temperature of the alkali treatment liquid at a fixed temperature (for example, 60° C.) higher than room temperature, for example. The temperature of the alkali treatment liquid circulating through the circulation pipe 32 is maintained at a constant temperature by the circulation heater 35 .

循環泵33、循環過濾器34以及循環加熱器35係設置於循環配管32。 A circulation pump 33 , a circulation filter 34 , and a circulation heater 35 are provided on the circulation piping 32 .

亦可設置加壓裝置以取代循環泵33。加壓裝置係使供給槽31內的氣壓上升，藉此將供給槽31內的鹼處理液送出至循環配管32。 A pressurizing device may also be provided instead of the circulation pump 33 . The pressurizing device raises the air pressure in the supply tank 31 to send the alkaline treatment liquid in the supply tank 31 to the circulation pipe 32 .

氣體供給配管P4係經由閥V31連接惰性氣體供給部60a以及供給槽31。閥V31係切換開始對供給槽31供給惰性氣體以及停止對供給槽31供給惰性氣體。 The gas supply pipe P4 is connected to the inert gas supply part 60a and the supply tank 31 via the valve V31. The valve V31 switches between starting the supply of the inert gas to the supply tank 31 and stopping the supply of the inert gas to the supply tank 31 .

配管P5係經由閥V32以及閥V3連接於洩槽(drain tank)(未圖示)。閥V32以及閥V33係切換開始對洩槽排出鹼處理液以及停止對洩槽排出鹼處理液。 The pipe P5 is connected to a drain tank (not shown) via a valve V32 and a valve V3. The valve V32 and the valve V33 switch between starting to discharge the alkali treatment liquid to the chute and stopping the discharge of the alkali treatment liquid to the chute.

一般而言，當空氣中的二氧化碳溶入至鹼處理液時，會生成碳酸鹽。當生成碳酸鹽時，鹼處理液的濃度會降低，從而鹼處理液的阻劑剝離性能會降低。 Generally speaking, when carbon dioxide in the air dissolves into the alkaline treatment liquid, carbonates are formed. When carbonate is generated, the concentration of the alkali treatment solution decreases, and the resist stripping performance of the alkali treatment solution decreases.

因此，惰性氣體供給部60a係經由氣體供給配管P4對供給槽31供給惰性氣體。因此，能使供給槽31內的二氧化碳的濃度降低。結果，能抑制在供給槽31內鹼處理液與二氧化碳反應從而生成碳酸鹽。因此，能抑制鹼處理液的阻劑剝離性能的降低。 Therefore, the inert gas supply part 60a supplies inert gas to the supply tank 31 via the gas supply pipe P4. Therefore, the concentration of carbon dioxide in the supply tank 31 can be reduced. As a result, it is possible to suppress generation of carbonate by reaction of the alkaline treatment liquid and carbon dioxide in the supply tank 31 . Therefore, the fall of the resist stripping performance of an alkali treatment liquid can be suppressed.

處理單元1係進一步具有閥V4以及分支配管P6。對基板W的背面供給鹼處理液。閥V4係切換對基板W的背面開始供給鹼處理液以及停止對基板W的背面供給鹼處理液。 The processing unit 1 further includes a valve V4 and a branch pipe P6. The alkali treatment liquid is supplied to the back surface of the substrate W. The valve V4 switches between starting supply of the alkali treatment liquid to the back surface of the substrate W and stopping supply of the alkali treatment liquid to the back surface of the substrate W.

回收單元40係具有回收槽41，且進一步具有閥V41、回收泵44以及氣體供給配管P7。此外，回收泵44係相當於「供給部」的一例。 The recovery unit 40 has a recovery tank 41, and further has a valve V41, a recovery pump 44, and a gas supply pipe P7. In addition, the recovery pump 44 corresponds to an example of a "supply part".

回收槽41係收容已從處理部回收的鹼處理液。 The recovery tank 41 stores the alkali treatment liquid recovered from the treatment unit.

回收泵44係從回收槽41對供給槽31供給鹼處理液。詳細而言，回收泵44係將回收槽41內的鹼處理液輸送至回收配管部52。 The recovery pump 44 supplies the alkaline treatment liquid from the recovery tank 41 to the supply tank 31 . Specifically, the recovery pump 44 sends the alkaline treatment liquid in the recovery tank 41 to the recovery piping unit 52 .

亦可設置加壓裝置以取代回收泵44。加壓裝置係使回收槽41內的氣壓上升，藉此將回收槽41內的鹼處理液送出至回收配管部52。 A pressurizing device may also be provided instead of the recovery pump 44 . The pressurizing device raises the air pressure in the recovery tank 41 to send the alkaline treatment liquid in the recovery tank 41 to the recovery piping part 52 .

氣體供給配管P7係連接惰性氣體供給部60b以及回收槽41。 The gas supply pipe P7 is connected to the inert gas supply part 60b and the recovery tank 41 .

惰性氣體供給部60b係經由氣體供給配管P7對回收槽41供給惰性氣體。因此，能使回收槽41內的二氧化碳的濃度降低。結果，能抑制在回收槽41內鹼處理液與二氧化碳反應從而生成碳酸鹽。因此，能抑制鹼處理液的阻劑剝離性能的降低。 The inert gas supply part 60b supplies inert gas to the recovery tank 41 via the gas supply pipe P7. Therefore, the concentration of carbon dioxide in the recovery tank 41 can be reduced. As a result, it is possible to suppress generation of carbonates by reaction of the alkaline treatment liquid and carbon dioxide in the recovery tank 41 . Therefore, the fall of the resist stripping performance of an alkali treatment liquid can be suppressed.

在已使回收泵44動作之情形中，會有回收槽41外的空氣從回收槽41的排氣口(未圖示)進入至回收單元的可能性。結果，會有回收槽41內的二氧化碳的濃度上升的可能性。 When the recovery pump 44 is operated, the air outside the recovery tank 41 may enter the recovery unit from the exhaust port (not shown) of the recovery tank 41 . As a result, the concentration of carbon dioxide in the recovery tank 41 may increase.

因此，在已使回收泵44動作之情形中，較佳為控制部3係以下述方式控制惰性氣體供給部60b：與未使回收泵44動作之情形相比，在使回收泵44動作之情形中惰性氣體的供給量增加。因此，使回收泵44動作，藉此能使所增 加的回收槽41內的二氧化碳的濃度降低。結果，能抑制在回收槽41內鹼處理液與二氧化碳反應從而生成碳酸鹽。 Therefore, when the recovery pump 44 has been operated, it is preferable that the control unit 3 controls the inert gas supply unit 60b in such a manner that when the recovery pump 44 is operated, the The supply of medium inert gas is increased. Therefore, by operating the recovery pump 44, the increased The concentration of carbon dioxide in the added recovery tank 41 decreases. As a result, it is possible to suppress generation of carbonates by reaction of the alkaline treatment liquid and carbon dioxide in the recovery tank 41 .

基板處理裝置100係進一步具備排出槽70。已處理過基板W後的鹼處理液係被排出至排出槽70。 The substrate processing apparatus 100 further includes a discharge tank 70 . The alkaline treatment solution that has processed the substrate W is discharged to the discharge tank 70 .

返回配管部51係連接處理單元1以及回收槽41。返回配管部51係具有供給配管部P8以及排出配管部P9。 The return piping part 51 is connected to the processing unit 1 and the recovery tank 41 . The return piping part 51 has a supply piping part P8 and a discharge piping part P9.

供給配管部P8係將已處理過基板W後的鹼處理液供給至回收槽41。供給配管部P8係連接處理單元1以及回收槽41。供給配管部P8係具有閥V5。閥V5係切換開始朝回收槽41供給已處理過基板W後的鹼處理液以及停止朝回收槽41供給已處理過基板W後的鹼處理液。 The supply piping unit P8 supplies the alkali treatment liquid after the substrate W has been processed to the recovery tank 41 . The supply piping part P8 is connected to the processing unit 1 and the recovery tank 41 . The supply piping part P8 has a valve V5. The valve V5 switches between starting supply of the substrate W-treated alkaline treatment solution to the recovery tank 41 and stopping supply of the substrate W-treated alkaline treatment solution to the recovery tank 41 .

排出配管部P9係將已處理過基板W後的鹼處理液排出至排出槽70。排出配管部P9係從供給配管部P8分支並連接於排出槽70。排出配管部P9係具有閥V6。閥V6係切換開始朝排出槽70排出已處理過基板W後的鹼處理液以及停止朝排出槽70排出已處理過基板W後的鹼處理液。 The discharge piping part P9 discharges the alkali treatment liquid after the substrate W has been processed to the discharge tank 70 . The discharge piping part P9 is branched from the supply piping part P8 and connected to the discharge tank 70 . The discharge piping part P9 has a valve V6. The valve V6 switches between starting to discharge the substrate W-treated alkaline treatment solution to the discharge tank 70 and stopping discharging the substrate W-treated alkaline treatment solution to the discharge tank 70 .

一般而言，在處理單元藉由鹼處理液剛開始阻劑去除的處理後，會有大量的阻劑混入至鹼處理液。因此，較佳為在剛開始阻劑去除的處理後不將鹼處理液回收至回收槽。因此，在本實施形態中，較佳為控制部3係以在剛開始阻劑去除的處理後不將鹼處理液回收至回收槽41之方式控制供給配管部P8以及排出配管部P9。 Generally speaking, after the processing unit starts the resist removal process with the alkali treatment solution, a large amount of resist will be mixed into the alkali treatment solution. Therefore, it is preferable not to recover the alkali treatment liquid to the recovery tank immediately after the treatment for removing the resist. Therefore, in the present embodiment, it is preferable that the control unit 3 controls the supply piping portion P8 and the discharge piping portion P9 so as not to recover the alkali treatment liquid to the recovery tank 41 immediately after the resist removal process is started.

具體而言，控制部3係在處理單元1藉由鹼處理液開始基板W的處理且在預定的期間內，以已處理過基板W後的鹼處理液於排出配管部P9流動之方式進行控制。詳細而言，控制部3係控制閥V6，從而打開閥V6而使已處理過 基板W後的鹼處理液流動至排出槽70。另一方面，控制部3係控制閥V5，從而關閉閥V5並使已處理過基板W後的鹼處理液不流動至回收槽41。 Specifically, the control unit 3 controls the process unit 1 so that the substrate W is processed by the alkaline treatment solution and the alkaline treatment solution after the substrate W has been processed flows through the discharge piping part P9 within a predetermined period of time. . Specifically, the control unit 3 controls the valve V6 so as to open the valve V6 to make the processed The alkali treatment liquid after the substrate W flows into the discharge tank 70 . On the other hand, the control unit 3 controls the valve V5 so as to close the valve V5 so that the alkali treatment liquid after the substrate W has been processed does not flow to the recovery tank 41 .

此外，在經過預定的期間後，以已處理過基板W後的鹼處理液於供給配管部P8流動之方式進行控制。詳細而言，控制部3係控制閥V5，從而打開V5而使已處理過基板W後的鹼處理液流動至回收槽41。另一方面，控制部3係控制閥V6，從而關閉閥V6而使已處理過基板W後的鹼處理液不會流動至排出槽70。 In addition, after a predetermined period of time has elapsed, control is performed so that the alkaline treatment liquid having processed the substrate W flows through the supply piping portion P8. More specifically, the control unit 3 controls the valve V5 so as to open the valve V5 to allow the alkali treatment liquid having processed the substrate W to flow into the recovery tank 41 . On the other hand, the control unit 3 controls the valve V6 so as to close the valve V6 so that the alkali treatment liquid having processed the substrate W does not flow to the discharge tank 70 .

如此，在剛開始阻劑去除的處理後，控制部3係以不會將鹼處理液回收至回收槽41之方式進行控制。因此，能設定成在混入有大量的阻劑的狀態下不將鹼處理液回收至回收槽41。結果，能效率佳地再次使用已處理過基板W後的鹼處理液。 In this way, the control unit 3 controls so as not to recover the alkali treatment liquid to the recovery tank 41 immediately after the resist removal process is started. Therefore, it can be set so that the alkali treatment liquid is not recovered to the recovery tank 41 in a state where a large amount of resist is mixed. As a result, the alkali treatment liquid after the substrate W has been treated can be efficiently reused.

以上，如已參照圖1至圖4所說明般，在基板處理裝置100中，惰性氣體供給部60係對供給槽31(第一收容部)以及回收槽41(第二收容部)的至少一者供給惰性氣體(氮氣)。因此，能使供給槽31內以及回收槽41內的二氧化碳的濃度降低。結果，能抑制在供給槽31內以及回收槽41內鹼處理液與二氧化碳反應從而生成碳酸鹽。因此，能抑制鹼處理液的阻劑剝離性能的降低。 As described above with reference to FIGS. 1 to 4 , in the substrate processing apparatus 100, the inert gas supply unit 60 is for at least one of the supply tank 31 (first storage unit) and the recovery tank 41 (second storage unit). or supply inert gas (nitrogen). Therefore, the concentration of carbon dioxide in the supply tank 31 and the recovery tank 41 can be reduced. As a result, it is possible to suppress generation of carbonates by reaction of the alkaline treatment liquid with carbon dioxide in the supply tank 31 and the recovery tank 41 . Therefore, the fall of the resist stripping performance of an alkali treatment liquid can be suppressed.

此外，在本實施形態中，雖然惰性氣體供給部60皆對供給槽31以及回收槽41供給惰性氣體，但本發明並未限定於此。例如，惰性氣體供給部60亦可僅對供給槽31以及回收槽41的任一者供給惰性氣體。 In addition, in this embodiment, although the inert gas supply part 60 supplies inert gas to both the supply tank 31 and the recovery tank 41, this invention is not limited to this. For example, the inert gas supply unit 60 may supply the inert gas only to any one of the supply tank 31 and the recovery tank 41 .

此外，控制部3係以下述方式控制惰性氣體供給部60：與不使回收泵44(供給部)動作之情形相比，在使回收泵44動作之情形中增加惰性氣體的供給量。因此，使回收泵44動作，藉此能使所增加的回收槽41內的二氧化碳的濃度降低。結果，能抑制在回收槽41內鹼處理液與二氧化碳反應從而生成碳酸鹽。 Moreover, the control part 3 controls the inert gas supply part 60 so that the supply amount of inert gas may be increased when the recovery pump 44 (supply part) is operated compared with the case where the recovery pump 44 (supply part) is not operated. Therefore, the concentration of the increased carbon dioxide in the recovery tank 41 can be reduced by operating the recovery pump 44 . As a result, it is possible to suppress generation of carbonates by reaction of the alkaline treatment liquid and carbon dioxide in the recovery tank 41 .

此外，控制部3係在處理單元1(處理部)藉由鹼處理液開始基板W的處理且在預定的期間內，以已處理過基板W後的鹼處理液於排出配管部P9流動之方式進行控制。此外，控制部3係在經過預定的期間後，以已處理過基板W後的鹼處理液於供給配管部P8流動之方式進行控制。因此，能設定成在混入有大量的阻劑的狀態下不將鹼處理液回收至回收槽41。結果，能效率佳地再次使用已處理過基板W後的鹼處理液。 In addition, the control unit 3 starts the processing of the substrate W with the alkaline treatment solution in the processing unit 1 (processing unit) and flows the alkaline treatment solution after the substrate W has been processed to the discharge pipe part P9 within a predetermined period of time. Take control. In addition, the control part 3 controls so that the alkali processing liquid which processed the board|substrate W will flow in the supply piping part P8 after a predetermined time period elapses. Therefore, it can be set so that the alkali treatment liquid is not recovered to the recovery tank 41 in a state where a large amount of resist is mixed. As a result, the alkali treatment liquid after the substrate W has been treated can be efficiently reused.

[實施形態二] [Implementation form 2]

參照圖1、圖2以及圖5說明本發明的實施形態二的基板處理裝置100。圖5係示意性地顯示本發明的實施形態二的基板處理裝置100的構成之側視圖。除了惰性氣體供給部60具有流量計62之點除外，由於實施形態二的基板處理裝置100係具有與實施形態一的基板處理裝置100同樣的構成，因此省略重複部分的說明。 A substrate processing apparatus 100 according to Embodiment 2 of the present invention will be described with reference to FIGS. 1 , 2 and 5 . FIG. 5 is a side view schematically showing the structure of a substrate processing apparatus 100 according to Embodiment 2 of the present invention. Except for the fact that the inert gas supply unit 60 has the flow meter 62, since the substrate processing apparatus 100 of the second embodiment has the same structure as the substrate processing apparatus 100 of the first embodiment, description of overlapping parts is omitted.

如圖5所示，惰性氣體供給部60a係具有流量計62。此外，流量計62係相當於「計測部」的一例。流量計62係計測被供給至供給槽31之惰性氣體的量。較佳為控制部3係依據流量計62所計測的惰性氣體的供給量調整惰性氣體供給部60a供給至供給槽31之惰性氣體的量。結果，能抑制過度地供給惰性氣體。此外，控制部3亦可進行反饋(feedback)控制，藉此調整供給至供給槽31之惰性氣體的量。 As shown in FIG. 5 , the inert gas supply unit 60 a has a flow meter 62 . In addition, the flowmeter 62 corresponds to an example of a "measurement part". The flow meter 62 measures the amount of the inert gas supplied to the supply tank 31 . Preferably, the control unit 3 adjusts the amount of the inert gas supplied to the supply tank 31 by the inert gas supply unit 60 a based on the supply amount of the inert gas measured by the flow meter 62 . As a result, excessive supply of inert gas can be suppressed. In addition, the control unit 3 may perform feedback control to adjust the amount of the inert gas supplied to the supply tank 31 .

同樣地，惰性氣體供給部60b係具有流量計62。此外，流量計62係相當於「計測部」的一例。流量計62係計測供給至回收槽41之惰性氣體的量。較佳為控制部3係依據流量計62所計測的惰性氣體的供給量調整惰性氣體供給部60b供給至回收槽41之惰性氣體的量。結果，能抑制過度地供給惰性氣體。此 外，控制部3亦可進行反饋控制，藉此調整供給至回收槽41之惰性氣體的量。此外，如在實施形態一所說明般，會有下述可能性：回收槽41係在回收泵44的動作中，回收槽41的二氧化碳的濃度係上升。因此，較佳為用以對回收槽41供給惰性氣體之惰性氣體供給部60b係具有流量計62。 Similarly, the inert gas supply unit 60 b has a flow meter 62 . In addition, the flowmeter 62 corresponds to an example of a "measurement part". The flow meter 62 measures the amount of the inert gas supplied to the recovery tank 41 . Preferably, the control unit 3 adjusts the amount of the inert gas supplied to the recovery tank 41 by the inert gas supply unit 60 b based on the supply amount of the inert gas measured by the flow meter 62 . As a result, excessive supply of inert gas can be suppressed. this In addition, the control unit 3 may perform feedback control to adjust the amount of the inert gas supplied to the recovery tank 41 . In addition, as described in the first embodiment, there is a possibility that the concentration of carbon dioxide in the recovery tank 41 may increase while the recovery pump 44 is operating in the recovery tank 41 . Therefore, it is preferable that the inert gas supply part 60b for supplying inert gas to the recovery tank 41 has the flowmeter 62.

與實施形態一同樣地，在本實施形態中亦能抑制在供給槽31內以及回收槽41內鹼處理液與二氧化碳反應從而生成碳酸鹽。因此，能抑制鹼處理液的阻劑剝離性能的降低。 As in the first embodiment, also in this embodiment, it is possible to suppress the reaction of the alkaline treatment solution with carbon dioxide in the supply tank 31 and the recovery tank 41 to generate carbonates. Therefore, the fall of the resist stripping performance of an alkali treatment liquid can be suppressed.

[實施形態三] [Implementation form three]

參照圖1、圖2以及圖6說明本發明的實施形態三的基板處理裝置100。圖6係示意性地顯示本發明的實施形態三的基板處理裝置100的構成之側視圖。除了基板處理裝置100具備偵測部515之點除外，由於實施形態三的基板處理裝置100係具有與實施形態一的基板處理裝置100同樣的構成，因此省略重複部分的說明。 A substrate processing apparatus 100 according to Embodiment 3 of the present invention will be described with reference to FIGS. 1 , 2 and 6 . FIG. 6 is a side view schematically showing the structure of a substrate processing apparatus 100 according to Embodiment 3 of the present invention. Except for the fact that the substrate processing apparatus 100 is equipped with the detection unit 515, since the substrate processing apparatus 100 of the third embodiment has the same structure as the substrate processing apparatus 100 of the first embodiment, descriptions of overlapping parts are omitted.

如圖6所示，基板處理裝置100係進一步具備偵測部515。偵測部515係設置於回收槽41內。詳細而言，偵測部515係設置於回收槽41的底面附近。偵測部515係偵測於回收槽41內是否存在有鹼處理液。偵測部515係例如為電容量感測器。控制部3係在已依據偵測部515所偵測的結果判定成於回收槽41內存在有鹼處理液之情形中，進行控制以使回收泵44開始動作。因此，能縮短鹼處理液滯留於回收槽41的時間。此外，控制部3係在已依據偵測部515所偵測的結果判定成於回收槽41內未存在有鹼處理液之情形中，進行控制以使回收泵44停止動作。結果，能抑制在回收槽41中鹼處理液與二氧化碳反應從而生成碳酸鹽。因此，能抑制鹼處理液的阻劑剝離性能的降低。 As shown in FIG. 6 , the substrate processing apparatus 100 further includes a detection unit 515 . The detection part 515 is disposed in the recovery tank 41 . Specifically, the detection unit 515 is disposed near the bottom of the recovery tank 41 . The detecting part 515 detects whether there is an alkali treatment solution in the recovery tank 41 . The detecting unit 515 is, for example, a capacitance sensor. The control unit 3 controls the recovery pump 44 to start operating when it is determined that the alkali treatment liquid exists in the recovery tank 41 based on the detection result of the detection unit 515 . Therefore, the time during which the alkali treatment liquid stays in the recovery tank 41 can be shortened. In addition, the control unit 3 controls to stop the recovery pump 44 when it has been determined that there is no alkaline treatment liquid in the recovery tank 41 based on the detection result of the detection unit 515 . As a result, it is possible to suppress generation of carbonates by reaction of the alkaline treatment liquid with carbon dioxide in the recovery tank 41 . Therefore, the fall of the resist stripping performance of an alkali treatment liquid can be suppressed.

與實施形態一以及實施形態二同樣地，在本實施形態中，亦能抑制在供給槽31內以及回收槽41內鹼處理液與二氧化碳反應從而生成碳酸鹽。因此，能抑制鹼處理液的阻劑剝離性能的降低。 As in the first and second embodiments, also in this embodiment, it is possible to suppress generation of carbonates by reaction of the alkaline treatment liquid with carbon dioxide in the supply tank 31 and the recovery tank 41 . Therefore, the fall of the resist stripping performance of an alkali treatment liquid can be suppressed.

[實施形態四] [Implementation form four]

參照圖1、圖2以及圖7說明本發明的實施形態四的基板處理裝置100。圖7係示意性地顯示本發明的實施形態四的基板處理裝置100的構成之側視圖。除了基板處理裝置100進一步具備排出槽80之點除外，由於實施形態四的基板處理裝置100係具有與實施形態一的基板處理裝置100同樣的構成，因此省略重複部分的說明。 A substrate processing apparatus 100 according to Embodiment 4 of the present invention will be described with reference to FIGS. 1 , 2 and 7 . FIG. 7 is a side view schematically showing the structure of a substrate processing apparatus 100 according to Embodiment 4 of the present invention. Except for the point that the substrate processing apparatus 100 is further provided with the discharge tank 80, since the substrate processing apparatus 100 of the fourth embodiment has the same structure as that of the substrate processing apparatus 100 of the first embodiment, description of overlapping parts is omitted.

如圖7所示，基板處理裝置100係進一步具備排出槽80以及配管部P10。排出槽80係收容已從處理單元1回收的碳酸水。已洗淨過基板W後的碳酸水係被排出至排出槽80。配管部P10係連接處理單元1以及排出槽80。此外，排出槽80係相當於「第三收容部」的一例。 As shown in FIG. 7 , the substrate processing apparatus 100 further includes a discharge tank 80 and a piping portion P10 . The discharge tank 80 stores the carbonated water recovered from the processing unit 1 . The carbonated water system after cleaning the substrate W is discharged to the discharge tank 80 . The piping part P10 connects the processing unit 1 and the discharge tank 80 . In addition, the discharge tank 80 corresponds to an example of the "third housing part".

在噴嘴21對基板W供給鹼處理液之情形中，已處理過基板W後的鹼處理液鹼處理液係被回收至回收槽41。此時，控制部3係以打開閥V5且關閉閥V6之方式進行控制。此外，移動部16(參照圖2)係在藉由鹼處理液處理基板W之情形中使第一罩14移動，從而使第一罩14接住鹼處理液。因此，被第一罩14接住的鹼處理液係經由供給配管部P8被回收至回收槽41。 When the nozzle 21 supplies the alkali treatment liquid to the substrate W, the alkali treatment liquid after the substrate W has been processed is recovered to the recovery tank 41 . At this time, the control unit 3 controls to open the valve V5 and close the valve V6. Moreover, the moving part 16 (refer FIG. 2) moves the 1st cover 14, and makes the 1st cover 14 catch an alkaline processing liquid when the substrate W is processed with an alkaline processing liquid. Therefore, the alkali treatment liquid system received by the 1st cover 14 is recovered to the recovery tank 41 via the supply piping part P8.

另一方面，在噴嘴23對基板W供給碳酸水之情形中，碳酸水係被回收至排出槽80。此外，在噴嘴23對基板W供給碳酸水之情形中，碳酸水不會被回收至回收槽41。此時，控制部3係以關閉閥V5以及閥V6之方式進行控制。此外，移動部16(參照圖2)係在噴嘴23對基板W供給碳酸水之情形中使第二罩15 移動，藉此使第二罩15接住碳酸水。因此，被第二罩15接住的碳酸水係經由配管部P10被回收至排出槽80。 On the other hand, when the nozzle 23 supplies carbonated water to the substrate W, the carbonated water is recovered to the discharge tank 80 . In addition, when the nozzle 23 supplies carbonated water to the substrate W, the carbonated water is not recovered to the recovery tank 41 . At this time, the control unit 3 controls to close the valve V5 and the valve V6. In addition, the moving unit 16 (see FIG. 2 ) moves the second cover 15 when the nozzle 23 supplies carbonated water to the substrate W. Move, whereby the second cover 15 catches the carbonated water. Therefore, the carbonated water caught in the second cover 15 is recovered to the discharge tank 80 via the piping part P10.

以上，如已參照圖1、圖2以及圖7所說明般，移動部16係在藉由鹼處理液處理基板W之情形中使第一罩14(第一液體接住部)移動，從而使第一罩14接住鹼處理液。因此，在藉由鹼處理液處理基板W之情形中，鹼處理液係被回收至回收槽41。另一方面，在噴嘴23(第二噴嘴)對基板W供給碳酸水之情形中使第二罩15(第二液體接住部)移動，從而使第二罩15接住碳酸水。因此，在噴嘴23對基板W供給碳酸水之情形中，碳酸水係被回收至排出槽80。結果，能效率佳地回收鹼處理液以及碳酸水。 As described above with reference to FIGS. 1 , 2 and 7, the moving part 16 moves the first cover 14 (first liquid receiving part) in the case of processing the substrate W with the alkali treatment liquid, thereby making the The first cover 14 receives the alkali treatment liquid. Therefore, in the case where the substrate W is treated by the alkali treatment liquid, the alkali treatment liquid is recovered to the recovery tank 41 . On the other hand, when the nozzle 23 (second nozzle) supplies the carbonated water to the substrate W, the second cover 15 (second liquid receiving portion) is moved so that the second cover 15 catches the carbonated water. Therefore, when the nozzle 23 supplies carbonated water to the substrate W, the carbonated water is recovered to the discharge tank 80 . As a result, the alkaline treatment liquid and carbonated water can be recovered efficiently.

與實施形態一以及實施形態二同樣地，在本實施形態中，亦能抑制在供給槽31內以及回收槽41內鹼處理液與二氧化碳反應從而生成碳酸鹽。因此，能抑制鹼處理液的阻劑剝離性能的降低。 As in the first and second embodiments, also in this embodiment, it is possible to suppress generation of carbonates by reaction of the alkaline treatment liquid with carbon dioxide in the supply tank 31 and the recovery tank 41 . Therefore, the fall of the resist stripping performance of an alkali treatment liquid can be suppressed.

以上，已參照圖式(圖1至圖7)說明了本發明的實施形態。然而，本發明並未限定於上述實施形態，在未逸離本發明的精神範圍內可在各種態樣中實施(例如以下所示的(1)至(5))。為了容易理解，圖式係主體性且示意性地顯示各個構成要素，且圖式中的各個構成要素的厚度、長度、個數等係因為圖式製作的便利性而與實際不同。此外，上述實施形態所示的各個構成要素的材質、形狀以及尺寸等為一個例子，並未特別限定，可在未實質性地逸離本發明的功效的範圍內進行各種變更。 The embodiments of the present invention have been described above with reference to the drawings (FIGS. 1 to 7). However, this invention is not limited to the said embodiment, It can implement in various aspects (for example, (1)-(5) shown below) within the range which does not deviate from the spirit of this invention. For easy understanding, the drawings are subjective and schematically show each constituent element, and the thickness, length, number, etc. of each constituent element in the drawing are different from the actual ones due to the convenience of making the drawing. In addition, the material, shape, size, etc. of each component shown in the said embodiment are an example and are not specifically limited, Various changes can be made in the range which does not substantially deviate from the effect of this invention.

(1)雖然在實施形態一至實施形態四中噴嘴23(第二噴嘴)係對基板W供給(噴出)碳酸水以及氮氣，但本發明並未限定於此。例如，噴嘴23亦可供給 (噴出)鹼處理液以及惰性氣體。在此情形中，能抑制在藉由鹼處理液處理基板W的過程中生成碳酸鹽。 (1) Although the nozzle 23 (second nozzle) supplied (discharged) carbonated water and nitrogen gas to the substrate W in the first to fourth embodiments, the present invention is not limited thereto. For example, the nozzle 23 can also supply (Spray) Alkali treatment liquid and inert gas. In this case, generation of carbonate during the treatment of the substrate W by the alkali treatment liquid can be suppressed.

(2)雖然在實施形態一至實施形態四中惰性氣體供給部60係對供給槽31或者回收槽41供給惰性氣體，但本發明並未限定於此。例如，惰性氣體供給部60亦可對回收配管部52供給惰性氣體。結果，在從回收單元40經由回收配管部52對供給單元30供給鹼處理液之情形中，能抑制在回收配管部52內鹼處理液與二氧化碳反應從而生成碳酸鹽。因此，能抑制鹼處理液的阻劑剝離性能的降低。 (2) Although the inert gas supply unit 60 supplies the inert gas to the supply tank 31 or the recovery tank 41 in the first to fourth embodiments, the present invention is not limited thereto. For example, the inert gas supply unit 60 may supply the inert gas to the recovery piping unit 52 . As a result, when the alkaline treatment liquid is supplied from the recovery unit 40 to the supply unit 30 via the recovery piping section 52 , the alkaline treatment liquid reacts with carbon dioxide in the recovery piping section 52 to form carbonates. Therefore, the fall of the resist stripping performance of an alkali treatment liquid can be suppressed.

(3)惰性氣體供給部60亦可藉由氣泡(bubbling)將惰性氣體供給至供給槽31以及回收槽41。藉由氣泡供給惰性氣體，藉此能使鹼處理液中的溶存二氧化碳量減少。結果，能抑制鹼處理液與二氧化碳反應從而生成碳酸鹽。因此，能抑制鹼處理液的阻劑剝離性能的降低。 (3) The inert gas supply unit 60 may supply the inert gas to the supply tank 31 and the recovery tank 41 by bubbling. The amount of dissolved carbon dioxide in the alkali treatment liquid can be reduced by supplying an inert gas by air bubbles. As a result, the reaction of the alkaline treatment liquid with carbon dioxide to generate carbonate can be suppressed. Therefore, the fall of the resist stripping performance of an alkali treatment liquid can be suppressed.

(4)雖然在實施形態一至實施形態四中回收單元40係配置於基板處理裝置100的內部，但本發明並未限定於此。回收單元40亦可配置於基板處理裝置100的外部。 (4) Although the recovery unit 40 is disposed inside the substrate processing apparatus 100 in Embodiment 1 to Embodiment 4, the present invention is not limited thereto. The recovery unit 40 can also be disposed outside the substrate processing apparatus 100 .

(5)在實施形態一至實施形態四中，處理單元1亦可進一步包含對向構件28(參照圖8)。圖8係示意性地顯示本發明的變化例的基板處理裝置100的構成之側視圖。如圖8所示，對向構件(阻隔板)28係可與基板W的上表面對向地配置。例如，對向構件28係移動至從基板W起10mm以下的高度。對向構件28中之與基板W的上表面對向之面的尺寸係例如比基板W的上表面的尺寸還大。噴嘴21係從對向構件28的中央部隔著間隔與基板W的上表面對向。噴嘴21係噴出鹼 處理液並噴出惰性氣體。因此，能抑制在藉由鹼處理液處理基板W的過程中生成碳酸鹽。 (5) In Embodiment 1 to Embodiment 4, the processing unit 1 may further include a facing member 28 (see FIG. 8 ). FIG. 8 is a side view schematically showing the structure of a substrate processing apparatus 100 according to a modified example of the present invention. As shown in FIG. 8 , the facing member (barrier plate) 28 may be disposed facing the upper surface of the substrate W. As shown in FIG. For example, the opposing member 28 moves to a height of 10 mm or less from the substrate W. As shown in FIG. The size of the surface of the facing member 28 that faces the upper surface of the substrate W is larger than the size of the upper surface of the substrate W, for example. The nozzle 21 faces the upper surface of the substrate W from the center of the facing member 28 with a gap therebetween. Nozzle 21 series spray alkali Process liquid and spray inert gas. Therefore, generation of carbonates during the treatment of the substrate W by the alkali treatment liquid can be suppressed.

1:處理單元(處理部) 1: Processing unit (processing part)

6:腔室 6: chamber

10:自轉夾具 10: Rotation fixture

11:夾具銷 11: Fixture pin

12:自轉基座 12: Rotation base

13:自轉馬達 13: Rotation motor

14:第一罩(第一液體接住部) 14: the first cover (the first liquid receiving part)

14a,15a:上端 14a, 15a: upper end

15:第二罩(第二液體接住部) 15: Second cover (second liquid receiving part)

16:移動部 16:Mobile Department

21:噴嘴(第一噴嘴) 21: Nozzle (first nozzle)

22,24:噴嘴移動單元 22,24: Nozzle moving unit

23:噴嘴(第二噴嘴) 23: Nozzle (second nozzle)

30:供給單元 30: Supply unit

31:供給槽(第一收容部) 31: Supply tank (first storage part)

40:回收單元 40: Recovery unit

41:回收槽(第二收容部) 41: Recovery Tank (Second Containment Section)

51:返回配管部 51: Return to the piping department

52:回收配管部 52: Recovery piping department

60,60a,60b:惰性氣體供給部 60, 60a, 60b: Inert gas supply part

100:基板處理裝置 100: Substrate processing device

A1:旋轉軸 A1: Axis of rotation

A2,A3:轉動軸線 A2, A3: axis of rotation

P1,P2,P3:供給配管 P1, P2, P3: supply piping

V1,V2,V3:閥 V1, V2, V3: valves

W:基板 W: Substrate

Claims (9)

一種基板處理裝置，係藉由鹼處理液處理基板，並具備：處理部，係處理前述基板；供給單元，係具有：第一收容部，係收容用以供給至前述處理部的前述鹼處理液；回收單元，係具有：第二收容部，係收容從前述處理部回收的前述鹼處理液；回收配管部，係連接前述第一收容部以及前述第二收容部；供給部，係從前述第二收容部對前述第一收容部供給前述鹼處理液；第一惰性氣體供給部，係對前述第一收容部供給惰性氣體，並具有：第一計測部，係計測供給至前述第一收容部之前述惰性氣體的量；第二惰性氣體供給部，係對前述第二收容部供給惰性氣體，並具有：第二計測部，係計測供給至前述第二收容部之前述惰性氣體的量；以及控制部，係以依據前述第一計測部所計測的前述惰性氣體的量調整供給至前述第一收容部的前述惰性氣體的量之方式控制前述第一惰性氣體供給部，並以依據前述第二計測部所計測的前述惰性氣體的量調整供給至前述第二收容部的前述惰性氣體的量之方式控制前述第二惰性氣體供給部；前述回收單元係具有前述供給部；前述控制部係以下述方式控制前述第二惰性氣體供給部：與不使前述供給部動作之情形相比，在使前述供給部動作之情形中增加朝前述第二收容部的前述惰性氣體的供給量。 A substrate processing apparatus that processes a substrate with an alkali treatment liquid, and includes: a processing unit that processes the substrate; a supply unit that includes: a first storage unit that stores the alkali treatment liquid to be supplied to the treatment unit The recovery unit has: the second storage part, which stores the aforementioned alkali treatment liquid recovered from the aforementioned processing part; the recovery piping part, which connects the aforementioned first storage part and the aforementioned second storage part; The second storage unit supplies the alkali treatment liquid to the first storage unit; the first inert gas supply unit supplies inert gas to the first storage unit, and has: a first measurement unit, which measures and supplies to the first storage unit The amount of the aforementioned inert gas; the second inert gas supply unit supplies the inert gas to the aforementioned second storage unit, and includes: a second measurement unit that measures the amount of the aforementioned inert gas supplied to the aforementioned second storage unit; and The control unit controls the first inert gas supply unit so as to adjust the amount of the inert gas supplied to the first storage unit based on the amount of the inert gas measured by the first measurement unit, and controls the first inert gas supply unit based on the second The amount of the inert gas measured by the measurement unit is controlled by adjusting the amount of the inert gas supplied to the second storage unit; the recovery unit has the supply unit; the control unit is as follows: Mode control of the second inert gas supply unit: When the supply unit is operated, the amount of the inert gas supplied to the second storage unit is increased compared to the case where the supply unit is not operated. 如請求項1所記載之基板處理裝置，其中進一步具備：偵測部，係偵測於前述第二收容部內是否存在有前述鹼處理液；前述控制部係以下述方式進行控制：在依據前述偵測部所偵測的結果判定成於前述第二收容部內存在有前述鹼處理液之情形中，前述供給部開始動作。 The substrate processing device as described in claim 1, further comprising: a detection unit, which detects whether the alkali treatment liquid exists in the second storage unit; the control unit performs control in the following manner: When it is determined by the detection part that the alkali treatment liquid exists in the second storage part, the supply part starts to operate. 如請求項1所記載之基板處理裝置，其中前述處理部係進一步具備：第一噴嘴，係對前述基板供給前述鹼處理液；以及第二噴嘴，係對前述基板供給前述鹼處理液以及前述惰性氣體。 The substrate processing apparatus as described in claim 1, wherein the processing section further includes: a first nozzle for supplying the alkali treatment liquid to the substrate; and a second nozzle for supplying the alkali treatment liquid and the inert substrate to the substrate. gas. 如請求項1所記載之基板處理裝置，其中前述處理部係進一步具有：第一噴嘴，係對前述基板供給前述鹼處理液；以及第二噴嘴，係對前述基板供給碳酸水以及前述惰性氣體。 The substrate processing apparatus according to claim 1, wherein the processing section further includes: a first nozzle for supplying the alkali treatment solution to the substrate; and a second nozzle for supplying carbonated water and the inert gas to the substrate. 如請求項4所記載之基板處理裝置，其中進一步具備：第三收容部，係收容從前述處理部回收的前述碳酸水；在前述第二噴嘴對前述基板供給前述碳酸水之情形中，前述碳酸水係被回收至前述第三收容部且前述碳酸水係不會被回收至前述第二收容部。 The substrate processing apparatus as described in Claim 4, further comprising: a third storage unit for storing the carbonated water recovered from the treatment unit; and when the carbonated water is supplied to the substrate by the second nozzle, the The water system is recovered to the third storage unit and the carbonated water system is not recovered to the second storage unit. 如請求項5所記載之基板處理裝置，其中進一步具備：第一液體接住部，係接住已處理過前述基板後的前述鹼處理液；第二液體接住部，係接住已處理過前述基板後的前述碳酸水；以及移動部，係使前述第一液體接住部以及前述第二液體接住部移動；前述移動部係在藉由前述鹼處理液處理前述基板之情形中，移動前述第一液體接住部以使前述第一液體接住部接住前述鹼處理液； 前述移動部係在前述第二噴嘴對前述基板供給前述碳酸水之情形中，移動前述第二液體接住部以使前述第二液體接住部接住前述碳酸水。 The substrate processing device as described in Claim 5, further comprising: a first liquid receiving part for receiving the aforementioned alkali treatment liquid after the aforementioned substrate has been processed; a second liquid receiving part for receiving the processed The aforementioned carbonated water behind the aforementioned substrate; and the moving part that moves the aforementioned first liquid receiving part and the aforementioned second liquid receiving part; the aforementioned moving part moves when the aforementioned substrate is treated with the aforementioned alkali treatment solution The aforementioned first liquid receiving portion allows the aforementioned first liquid receiving portion to receive the aforementioned alkaline treatment liquid; The moving part moves the second liquid receiving part so that the second liquid receiving part catches the carbonated water when the second nozzle supplies the carbonated water to the substrate. 如請求項1所記載之基板處理裝置，其中進一步具備：返回配管部，係連接前述處理部以及前述第二收容部；前述返回配管部係具有：供給配管部，係將已處理過前述基板後的前述鹼處理液供給至前述第二收容部；以及排出配管部，係將已處理過前述基板後的前述鹼處理液予以排出；前述控制部係控制前述供給配管部以及前述排出配管部；前述控制部係在前述處理部藉由前述鹼處理液開始前述基板的處理且在預定的期間內以已處理過前述基板的前述鹼處理液於前述排出配管部流動之方式進行控制，並在經過前述預定的期間後以已處理過前述基板後的前述鹼處理液於前述供給配管部流動之方式進行控制。 The substrate processing apparatus as described in Claim 1, further comprising: a return piping section connected to the processing section and the second storage section; the return piping section has a supply piping section for processing the substrate The aforementioned alkaline treatment liquid is supplied to the aforementioned second storage portion; and the discharge piping portion is used to discharge the aforementioned alkaline processing liquid after the substrate has been processed; the aforementioned control portion controls the aforementioned supply piping portion and the aforementioned discharge piping portion; the aforementioned The control unit starts the processing of the substrate with the alkali treatment solution in the processing unit and controls the alkali treatment solution that has processed the substrate to flow in the discharge piping unit for a predetermined period of time, and after passing through the After a predetermined period of time, control is performed so that the alkali treatment liquid having processed the substrate flows through the supply piping section. 如請求項1所記載之基板處理裝置，其中於前述回收配管部連接有用以供給前述惰性氣體之惰性氣體供給部；前述惰性氣體供給部係對前述回收配管部供給前述惰性氣體。 The substrate processing apparatus according to claim 1, wherein an inert gas supply unit for supplying the inert gas is connected to the recovery piping unit; the inert gas supply unit supplies the inert gas to the recovery piping unit. 一種基板處理方法，係用以處理基板，並包含：第一供給工序，係從用以收容鹼處理液之第一收容部將前述鹼處理液供給至處理部；處理工序，係前述處理部藉由前述鹼處理液處理前述基板；回收工序，係將已處理過前述基板的前述鹼處理液從前述處理部回收至第二收容部；以及 第二供給工序，係從前述第二收容部對前述第一收容部供給前述鹼處理液；對前述第一收容部以及前述第二收容部供給惰性氣體；與不是前述第二供給工序之情形相比，在前述第二供給工序之情形中增加朝前述第二收容部的前述惰性氣體的供給量；計測供給至前述第一收容部以及前述第二收容部的前述惰性氣體的量，並依據所計測的前述惰性氣體的量調整分別供給至前述第一收容部以及前述第二收容部的前述惰性氣體的量。 A method for processing a substrate, which is used to process a substrate, and includes: a first supply process of supplying the alkali treatment solution to the treatment unit from a first storage unit for storing the alkali treatment solution; Treating the aforementioned substrate with the aforementioned alkaline treatment liquid; the recovery process is to recover the aforementioned alkaline treatment liquid that has treated the aforementioned substrate from the aforementioned processing unit to the second storage unit; and The second supply process is to supply the alkali treatment liquid from the second storage part to the first storage part; supply an inert gas to the first storage part and the second storage part; and it is not the case of the second supply process Compared with, in the case of the aforementioned second supply process, increase the supply amount of the aforementioned inert gas toward the aforementioned second container; measure the amount of the aforementioned inert gas supplied to the aforementioned first container and the aforementioned second container, and based on the The measured amount of the inert gas adjusts the amount of the inert gas supplied to the first container and the second container.

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