TW202026775A - Substrate processing device and device manufacturing method - Google Patents
Substrate processing device and device manufacturing method Download PDFInfo
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- TW202026775A TW202026775A TW109111014A TW109111014A TW202026775A TW 202026775 A TW202026775 A TW 202026775A TW 109111014 A TW109111014 A TW 109111014A TW 109111014 A TW109111014 A TW 109111014A TW 202026775 A TW202026775 A TW 202026775A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/24—Curved surfaces
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Abstract
Description
本發明係關於對位在基板支承構件之曲面之基板施以處理的基板處理裝置及元件製造方法。The present invention relates to a substrate processing device and a device manufacturing method for processing a substrate positioned on a curved surface of a substrate support member.
微影製程所使用之曝光裝置中,有一種如下述專利文獻所揭示之、使圓筒狀或圓柱狀光罩旋轉,以使基板曝光之曝光裝置(例如,參照專利文獻1)。Among the exposure devices used in the lithography process, there is an exposure device that rotates a cylindrical or cylindrical mask to expose a substrate as disclosed in the following patent documents (for example, refer to Patent Literature 1).
不僅僅是在使用板狀光罩之場合,即使是在使用圓筒狀或圓柱狀光罩來使基板曝光之情形時,為了將光罩圖案之像良好的投影曝光至基板,必須正確的取得光罩圖案之位置資訊。因此,期待有一種能正確的取得圓筒狀或圓柱狀光罩之位置資訊,以能正確的調整該光罩與基板間之位置關係之技術。Not only in the case of using a plate-shaped mask, even when a cylindrical or cylindrical mask is used to expose the substrate, in order to project the image of the mask pattern onto the substrate, it must be correctly obtained Position information of the mask pattern. Therefore, it is expected that there is a technology that can accurately obtain the position information of the cylindrical or cylindrical mask so as to accurately adjust the positional relationship between the mask and the substrate.
於是,專利文獻1所揭示之曝光裝置中,揭露了一種於光罩之圖案形成面之既定區域,相對圖案以既定位置關係形成位置資訊取得用之標記(刻度、格子等),並藉由以編碼器系統檢測標記,以取得圖案在圖案形成面之周方向之位置資訊、或光罩之旋轉軸方向之位置資訊的構成。Therefore, the exposure device disclosed in
又,近年來,亦提出一種為了將大型顯示面板(液晶、有機EL等)等之電子元件形成於可撓性樹脂薄膜、塑膠片材、極薄玻璃片材等,而拉出捲繞成輥狀之可撓性長條狀薄膜或片材(以下,稱可撓性基板),於該可撓性基板表面塗布光感應層,於該光感應層曝光出電子電路用之各種圖案的裝置(例如,專利文獻2)。先行技術文獻 [專利文獻1] 日本特開2008-076650號公報 [專利文獻2] 日本特開2010-217877號公報In addition, in recent years, it has also been proposed to form electronic components such as large-scale display panels (liquid crystal, organic EL, etc.) on flexible resin films, plastic sheets, ultra-thin glass sheets, etc., which are drawn and wound into rolls. A device in which a flexible strip-shaped film or sheet (hereinafter referred to as flexible substrate) is coated with a light-sensitive layer on the surface of the flexible substrate, and various patterns for electronic circuits are exposed on the light-sensitive layer ( For example, Patent Document 2). Prior Art Document [Patent Document 1] JP 2008-076650 A [Patent Document 2] JP 2010-217877 A
發明欲解決之課題Problems to be solved by the invention
上述專利文獻2所揭露之對可撓性基板施以處理之基板處理裝置,被要求可抑制基板之伸縮、及可提升處理之精度。The substrate processing apparatus disclosed in
本發明之態樣即係在上述情事下完成,其目的在提供一種可抑制基板伸縮、提升處理精度之基板處理裝置及元件製造方法。用以解決 課題 之 手段 The aspect of the present invention is completed under the above circumstances, and its purpose is to provide a substrate processing apparatus and device manufacturing method that can suppress the expansion of the substrate and improve the processing accuracy. Solution to Problem for the
本發明第1態樣,提供一種基板處理裝置,具備:基板支承構件,具有從既定軸以一定半徑彎曲之曲面,基板之一部分被捲繞於該曲面以支承該基板;處理部,由該軸看配置在該基板支承構件周圍,對位於周方向中特定位置之該曲面的該基板施以處理;以及溫度調節裝置,用以調整供應至該基板支承構件前之該基板之溫度。A first aspect of the present invention provides a substrate processing apparatus, including: a substrate supporting member having a curved surface bent at a certain radius from a predetermined axis, a part of the substrate is wound on the curved surface to support the substrate; It is arranged around the substrate supporting member to process the curved substrate at a specific position in the circumferential direction; and a temperature adjusting device for adjusting the temperature of the substrate before being supplied to the substrate supporting member.
本發明第2態樣,提供一種使用本發明第1態樣之基板處理裝置於基板形成圖案之元件製造方法。The second aspect of the present invention provides a device manufacturing method for patterning a substrate using the substrate processing apparatus of the first aspect of the present invention.
本發明第3態樣,提供一種元件製造方法,係於可撓性長條狀基板上製造電子元件,包含:一邊將該基板之長條方向之一部分沿基板支承構件之該長條方向彎曲之支承面加以支承、一邊將該基板於該長條方向以既定速度加以搬送的動作;於該基板支承構件之支承面中之該長條方向之特定位置,將構成該電子元件之圖案轉印至被支承於該支承面之該基板的動作;以及以相對該基板支承構件之支承面之該基板在搬送方向上游側之溫度、與該基板在該支承面之溫度為既定差之方式進行溫度控制的動作。發明效果 A third aspect of the present invention provides a device manufacturing method for manufacturing an electronic device on a flexible elongated substrate, including: bending a portion of the substrate in the longitudinal direction along the longitudinal direction of the substrate support member The support surface supports the motion of conveying the substrate in the longitudinal direction at a predetermined speed; at a specific position in the longitudinal direction on the support surface of the substrate support member, the pattern constituting the electronic component is transferred to The movement of the substrate supported on the support surface; and temperature control is performed such that the temperature of the substrate on the upstream side of the support surface of the substrate support member in the conveying direction is a predetermined difference from the temperature of the substrate on the support surface Actions. Invention effect
根據本發明之態樣,上述基板處理裝置及元件製造方法可抑制基板伸縮、提升處理精度。According to an aspect of the present invention, the above-mentioned substrate processing apparatus and device manufacturing method can suppress expansion and contraction of the substrate and improve processing accuracy.
針對用以實施本發明之形態(實施形態),一邊參照圖面一邊加以詳細説明如下。本發明並不受以下實施形態記載内容之限定。又,以下記載之構成要素中,當然包含本領域之業者易於想到之、實質上相同之物。再者,以下記載之構成要素可適當的加以組合。此外,在不脫離本發明之要旨範圍內可進行構成要素之各種省略、置換或變更。例如,以下之實施形態中,作為元件雖係以製造可撓性顯示器之場合為例加以説明,但不限於此。作為元件,亦可以是製造配線基板、半導體基板等。The form (embodiment) for implementing the present invention will be described in detail as follows while referring to the drawings. The present invention is not limited to the contents described in the following embodiments. In addition, the constituent elements described below naturally include those that are easily conceivable by those in the field and are substantially the same. Furthermore, the constituent elements described below can be appropriately combined. In addition, various omissions, substitutions, or changes of constituent elements can be made without departing from the scope of the present invention. For example, in the following embodiments, although a case where a flexible display is manufactured as an element is described as an example, it is not limited to this. As an element, a wiring board, a semiconductor substrate, etc. may be manufactured.
( 第1實施形態 ) 第1實施形態中,對基板施以曝光處理之基板處理裝置係曝光裝置。又,曝光裝置係組裝在對曝光後之基板施以各種處理以製造元件之元件製造系統中。首先,說明元件製造系統。 < 元件製造系統 >(First Embodiment) In the first embodiment, the substrate processing apparatus that applies exposure processing to the substrate is an exposure apparatus. In addition, the exposure device is assembled in a component manufacturing system that applies various processes to the exposed substrate to manufacture components. First, the component manufacturing system will be explained. <Component manufacturing system >
圖1係顯示第1實施形態之元件製造系統之構成的圖。圖1所示之元件製造系統1,係製造作為元件之可撓性顯示器的生產線(可撓性顯示器製造線)。作為可撓性顯示器,例如有有機EL顯示器等。此元件製造系統1,係從將可撓性基板P捲繞成捲筒狀之供應用捲筒FR1送出該基板P,並對送出之基板P連續的施以各種處理後,將處理後之基板P作為可撓性元件捲繞於回收用捲筒FR2、所謂之捲對捲(Roll to Roll)方式。第1實施形態之元件製造系統1,係顯示將成薄膜狀片材之基板P從供應用捲筒FR1送出,從供應用捲筒FR1送出之基板P,依序經n台之處理裝置U1、U2、U3、U4、U5、…Un,捲繞至回收用捲筒FR2為止之例。首先,針對作為元件製造系統1之處理對象的基板P加以説明。Fig. 1 is a diagram showing the configuration of the component manufacturing system of the first embodiment. The
基板P,例如係使用由樹脂薄膜、不鏽鋼等之金屬或合金構成之箔(foil)等。作為樹脂薄膜之材質,例如包含聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯乙烯共聚物樹脂、聚氯乙烯樹脂、纖維素樹酯、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、乙酸乙烯酯樹脂中之1或2種以上。For the substrate P, for example, a foil made of metal or alloy such as a resin film, stainless steel, or the like is used. The material of the resin film includes, for example, polyethylene resin, polypropylene resin, polyester resin, ethylene ethylene copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, and polycarbonate resin. , Polystyrene resin, vinyl acetate resin, one or more than two kinds.
基板P,以選擇例如熱膨脹係數顯著較大、而能在對基板P實施之各種處理中因受熱而產生之變形量可實質忽視者較佳。熱膨脹係數,例如,可藉由將無機填充物混入樹脂薄膜中,據以設定為較對應製程溫度等之閾値小。無機填充物,可以是例如,氧化鈦、氧化鋅、氧化鋁、氧化矽等。又,基板P可以是以浮製法等製造之厚度100μm程度之極薄玻璃之單層體、或於此極薄玻璃貼合上述樹脂薄膜、箔等之積層體。For the substrate P, it is better to select, for example, the coefficient of thermal expansion is significantly larger, and the amount of deformation that can be generated by heat during various processes performed on the substrate P can be substantially ignored. The coefficient of thermal expansion, for example, can be set to be smaller than the threshold of the corresponding process temperature by mixing inorganic fillers into the resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, aluminum oxide, silicon oxide, and the like. In addition, the substrate P may be a single layer of ultra-thin glass with a thickness of about 100 μm manufactured by a float method or the like, or a laminate of the above-mentioned resin film, foil, etc. bonded to this ultra-thin glass.
以此方式構成之基板P,被捲繞成捲筒狀而成為供應用捲筒FR1,此供應用捲筒FR1被裝著於元件製造系統1。裝有供應用捲筒FR1之元件製造系統1,對從供應用捲筒FR1送出之基板P反覆實施用以製造1個元件之各種處理。因此,處理後之基板P成為複數個元件連結之狀態。也就是說,從供應用捲筒FR1送出之基板P,為多面用之基板。此外,基板P亦可以是藉由預先之既定前處理,將其表面予以改質而活性化者、或於表面形成用以精密圖案化之微細間隔壁構造(凹凸構造)者。The substrate P configured in this manner is wound into a roll shape to become a supply roll FR1, and this supply roll FR1 is mounted in the
處理後之基板P,被捲繞成捲筒狀作為回收用捲筒FR2加以回收。回收用捲筒FR2,被安裝於為圖示之切割裝置。裝有回收用捲筒FR2之切割裝置,將處理後之基板P分割(切割)成各個元件,據以成複數個元件。基板P之尺寸,例如,寬度方向(短邊之方向)之尺寸為10cm~2m程度、而長度方向(長條之方向)尺寸則為10m以上。當然,基板P之尺寸不限於上述尺寸。The processed substrate P is wound into a roll shape to be recovered as a recovery roll FR2. The recycling roll FR2 is installed in the cutting device shown in the figure. A cutting device equipped with a reel FR2 for recycling, divides (cuts) the processed substrate P into individual components, and then divides them into multiple components. The size of the substrate P, for example, the size in the width direction (the direction of the short side) is about 10 cm to 2 m, and the size in the length direction (the direction of the long strip) is more than 10 m. Of course, the size of the substrate P is not limited to the above-mentioned size.
其次,參照圖1,說明元件製造系統1。圖1中,X方向、Y方向及Z方向成一正交之正交座標系。X方向係在水平面内,連結供應用捲筒FR1及回收用捲筒FR2之方向,為圖1中之左右方向。Y方向係在水平面内與X方向正交之方向,為圖1中之前後方向。Y方向係供應用捲筒FR1及回收用捲筒FR2之軸方向。Z方向係鉛直方向,為圖1中之上下方向。Next, referring to FIG. 1, the
元件製造系統1,具備供應基板P之基板供應裝置2、對由基板供應裝置2供應之基板P施以各種處理之處理裝置U1~Un、回收經處理裝置U1~Un施以處理之基板P之基板回收裝置3、以及控制元件製造系統1之各裝置之上位控制裝置5。The
於基板供應裝置2,以可旋轉之方式安裝供應用捲筒FR1。基板供應裝置2,具有從所安裝之供應用捲筒FR1送出基板P的驅動輥DR1、與調整基板P在寬度方向(Y方向)之位置的邊緣位置控制器EPC1。驅動輥DR1,一邊夾持基板P之表背兩面一邊旋轉,將基板P從供應用捲筒FR1往朝向回收用捲筒FR2之搬送方向送出,據以將基板P供應至處理裝置U1~Un。此時,邊緣位置控制器EPC1係以基板P在寬度方向端部(邊緣)之位置,相對目標位置在±十數μm程度範圍至±數十μm程度之範圍內之方式,使基板P移動於寬度方向,以修正基板P在寬度方向之位置。On the
於基板回收裝置3,以可旋轉之方式裝有回收用捲筒FR2。基板回收裝置3,具有將處理後之基板P拉向回收用捲筒FR2側的驅動輥DR2、與調整基板P在寬度方向(Y方向)之位置的邊緣位置控制器EPC2。基板回收裝置3,一邊以驅動輥DR2夾持基板P之表背兩面一邊旋轉,將基板P拉向搬送方向,並藉由使回收用捲筒FR2旋轉,據以捲繞基板P。此時,邊緣位置控制器EPC2與邊緣位置控制器EPC1同樣構成,修正基板P在寬度方向之位置,以避免基板P之寬度方向端部(邊緣)在寬度方向產生不均。The
處理裝置U1,係在從基板供應裝置2供應之基板P表面塗布感光性機能液之塗布裝置。作為感光性機能液,例如係使用光阻劑、感光性矽烷耦合劑、UV硬化樹脂液等。處理裝置U1,從基板P之搬送方向上游側起,依序設有塗布機構Gp1與乾燥機構Gp2。塗布機構Gp1,具有捲繞基板P之壓輥R1、與和壓輥R1對向之塗布輥R2。塗布機構Gp1在將所供應之基板P捲繞於壓輥R1之狀態下,以壓輥R1及塗布輥R2夾持基板P。接著,塗布機構Gp1藉由使壓輥R1及塗布輥R2旋轉,一邊使基板P移動於搬送方向、一邊以塗布輥R2塗布感光性機能液。乾燥機構Gp2吹出熱風或乾燥空氣等之乾燥用空氣以除去感光性機能液中所含之溶質(溶劑或水),使塗有感光性機能液之基板P乾燥,以在基板P上形成感光性機能層。The processing device U1 is a coating device that coats the photosensitive functional liquid on the surface of the substrate P supplied from the
處理裝置U2,係為了使形成在基板P表面之感光性機能層安定,而將從處理裝置U1搬送之基板P加熱至既定溫度(例如,數10~120℃程度)之加熱裝置。處理裝置U2,從基板P之搬送方向上游側起依序設有加熱室HA1與冷卻室HA2。加熱室HA1,於其内部設有複數個輥及複數個空氣翻轉桿(air turn bar),複數個輥及複數個空氣翻轉桿構成基板P之搬送路徑。複數個輥以接觸基板P背面之方式設置,複數個空氣翻轉桿以非接觸狀態設於基板P之表面側。複數個輥及複數個空氣翻轉桿為加長基板P之搬送路徑,而呈蛇行狀之搬送路徑。通過加熱室HA1内之基板P,一邊沿蛇行狀之搬送路徑被搬送、一邊被加熱至既定溫度。冷卻室HA2,為使在加熱室HA1加熱之基板P之溫度與後製程(處理裝置U3)之環境溫度一致,而將基板P冷卻至環境溫度。冷卻室HA2,其内部設有複數個輥,複數個輥,與加熱室HA1同樣的,為加長基板P之搬送路徑而呈蛇行狀搬送路徑之配置。通過冷卻室HA2内之基板P,一邊沿蛇行狀之搬送路徑被搬送一邊被冷卻。於冷卻室HA2之搬送方向下游側,設有驅動輥DR3,驅動輥DR3一邊夾持通過冷卻室HA2之基板P一邊旋轉,據以將基板P供應向處理裝置U3。The processing device U2 is a heating device that heats the substrate P conveyed from the processing device U1 to a predetermined temperature (for example, a few 10 to 120°C) in order to stabilize the photosensitive functional layer formed on the surface of the substrate P. The processing device U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in this order from the upstream side in the conveying direction of the substrate P. In the heating chamber HA1, a plurality of rollers and a plurality of air turn bars (air turn bars) are provided in the heating chamber HA1, and the plurality of rollers and a plurality of air turn bars constitute a transport path of the substrate P. A plurality of rollers are arranged so as to contact the back surface of the substrate P, and a plurality of air inversion rods are arranged on the surface side of the substrate P in a non-contact state. A plurality of rollers and a plurality of air reversing rods are a conveying path of the lengthened substrate P, and a conveying path of a meandering shape. The substrate P in the heating chamber HA1 is heated to a predetermined temperature while being transported along the meandering transport path. The cooling chamber HA2 cools the substrate P to the ambient temperature in order to make the temperature of the substrate P heated in the heating chamber HA1 consistent with the ambient temperature of the subsequent process (processing device U3). The cooling chamber HA2 is provided with a plurality of rollers inside, and the plurality of rollers, like the heating chamber HA1, are arranged in a meandering conveying path to lengthen the conveying path of the substrate P. The substrate P in the cooling chamber HA2 is cooled while being transported along the meandering transport path. On the downstream side in the conveying direction of the cooling chamber HA2, a drive roller DR3 is provided. The drive roller DR3 rotates while clamping the substrate P passing through the cooling chamber HA2, thereby supplying the substrate P to the processing device U3.
處理裝置(基板處理裝置)U3,係對從處理裝置U2供應、表面形成有感光性機能層之基板(感光基板)P,投影曝光(轉印)顯示器用電路或配線等圖案之曝光裝置。詳細將留待後敘,處理裝置U3以照明光束照明穿透型或反射型之圓筒光罩(光罩)DM,將藉由照明光束穿透圓筒光罩(光罩)DM、或被其反射所得之投影光束投影曝光於基板P。處理裝置U3,具有將從處理裝置U2供應之基板P送往搬送方向下游側的驅動輥DR4、與調整基板P在寬度方向(Y方向)之位置的邊緣位置控制器EPC。驅動輥DR4藉由在夾持基板P之表背兩面之同時進行旋轉,將基板P送向搬送方向下游側,據以朝曝光位置供應基板P。邊緣位置控制器EPC與邊緣位置控制器EPC1同樣構成,修正基板P在寬度方向之位置,以使在曝光位置之基板P之寬度方向成為目標位置。處理裝置U3,在以溫度調節裝置60調整邊緣位置控制器EPC供應之基板P之溫度後,以驅動輥DR5搬送基板P。The processing device (substrate processing device) U3 is an exposure device for projecting and exposing (transferring) patterns such as a circuit or wiring for a display on a substrate (photosensitive substrate) P supplied from the processing device U2 and with a photosensitive functional layer formed on the surface. The details will be described later. The processing device U3 illuminates the penetrating or reflective cylindrical mask (mask) DM with the illuminating beam, and will penetrate the cylindrical mask (mask) DM by the illuminating beam, or be The reflected projection beam is projected and exposed on the substrate P. The processing device U3 has a drive roller DR4 that sends the substrate P supplied from the processing device U2 to the downstream side in the conveying direction, and an edge position controller EPC that adjusts the position of the substrate P in the width direction (Y direction). The driving roller DR4 rotates while sandwiching the front and back surfaces of the substrate P to send the substrate P to the downstream side in the conveying direction, thereby supplying the substrate P to the exposure position. The edge position controller EPC has the same configuration as the edge position controller EPC1, and corrects the position of the substrate P in the width direction so that the width direction of the substrate P at the exposure position becomes the target position. The processing device U3 uses the
又,處理裝置U3,具備緩衝部DL,此緩衝部DL具有在對曝光後之基板P賦予鬆弛之狀態下,將基板P送往搬送方向下游側之2組驅動輥DR6、DR7。2組驅動輥DR6、DR7於基板P之搬送方向相隔既定間隔配置。驅動輥DR6夾持搬送之基板P之上游側並旋轉,驅動輥DR7則夾持搬送之基板P之下游側並旋轉,據以將基板P供應向處理裝置U4。此時,基板P由於被賦予鬆弛,因此能吸收在較驅動輥DR7靠搬送方向下游側所產生之搬送速度之變動,而能消除搬送速度之變動對基板P之曝光處理之影響。又,於處理裝置U3内,為進行圓筒光罩(光罩)DM之光罩圖案之一部分之像與基板P之相對位置對準(對準,alignment),而設有檢測預先形成在基板P之對準標記等的對準顯微鏡AMG1、AMG2。In addition, the processing device U3 includes a buffer portion DL having two sets of drive rollers DR6 and DR7 that send the substrate P to the downstream side in the conveying direction in a state where the substrate P after exposure is slackened. Two sets of drive The rollers DR6 and DR7 are arranged at a predetermined interval in the conveying direction of the substrate P. The driving roller DR6 clamps and rotates the upstream side of the conveyed substrate P, and the driving roller DR7 clamps and rotates the downstream side of the conveyed substrate P, thereby supplying the substrate P to the processing device U4. At this time, since the substrate P is given slack, it can absorb the change in the conveying speed that occurs on the downstream side of the driving roller DR7 in the conveying direction, and the influence of the change in the conveying speed on the exposure processing of the substrate P can be eliminated. In addition, in the processing device U3, in order to perform the relative position alignment (alignment) between the image of a part of the photomask pattern of the cylindrical photomask (mask) DM and the substrate P, there is provided a detection preformed on the substrate Alignment microscopes AMG1 and AMG2 for alignment marks of P.
處理裝置U4,係對從處理裝置U3搬送而來之曝光後之基板P,進行濕式之顯影處理、無電電鍍處理等之濕式處理裝置。處理裝置U4,於其内部具有於鉛直方向(Z方向)階段化之3個處理槽BT1、BT2、BT3、與搬送基板P之複數個輥。複數個輥係以基板P依序通過3個處理槽BT1、BT2、BT3内部之搬送路徑的方式配置。於處理槽BT3之搬送方向下游側設有驅動輥DR8,驅動輥DR8藉由一邊夾持通過處理槽BT3後之基板P一邊旋轉,據以將基板P供應向處理裝置U5。The processing device U4 is a wet processing device that performs wet development processing and electroless plating processing on the exposed substrate P conveyed from the processing device U3. The processing device U4 has three processing tanks BT1, BT2, BT3 stepped in the vertical direction (Z direction), and a plurality of rollers for conveying the substrate P inside. The plurality of rollers are arranged in such a way that the substrate P sequentially passes through the conveying path inside the three processing tanks BT1, BT2, and BT3. A driving roller DR8 is provided on the downstream side of the processing tank BT3 in the conveying direction. The driving roller DR8 rotates while clamping the substrate P after passing through the processing tank BT3, thereby supplying the substrate P to the processing device U5.
雖省略圖示,但處理裝置U5係使從處理裝置U4搬送而來之基板P乾燥的乾燥裝置。處理裝置U5,將在處理裝置U4將濕式處理而附著於基板P之水分含有量,調整為既定水分含有量。由處理裝置U5加以乾燥之基板P,經由若干個處理裝置後被搬送至處理裝置Un。在以處理裝置Un加以處理後,基板P即被捲繞於基板回收裝置3之回收用捲筒FR2。Although the illustration is omitted, the processing device U5 is a drying device that dries the substrate P conveyed from the processing device U4. The processing device U5 adjusts the moisture content of the substrate P after wet processing in the processing device U4 to a predetermined moisture content. The substrate P dried by the processing device U5 is transported to the processing device Un after passing through a plurality of processing devices. After being processed by the processing device Un, the substrate P is wound on the recovery reel FR2 of the
上位控制裝置5,統籌控制基板供應裝置2、基板回收裝置3及複數個處理裝置U1~Un。上位控制裝置5控制基板供應裝置2及基板回收裝置3,將基板P從基板供應裝置2搬送向基板回收裝置3。又,上位控制裝置5,與基板P之搬送同步,控制複數個處理裝置U1~Un,以實施對基板P之各種處理。
< 曝光裝置(基板處理裝置) >The
其次,針對作為第1實施形態之處理裝置U3之曝光裝置(基板處理裝置)之構成,參照圖2至圖4加以説明。圖2係顯示第1實施形態之曝光裝置(基板處理裝置)之全體構成的圖。圖3係顯示圖2所示曝光裝置之照明區域及投影區域之配置的圖。圖4係顯示圖2所示曝光裝置之投影光學系之構成的圖。Next, the structure of the exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of the first embodiment will be described with reference to FIGS. 2 to 4. Fig. 2 is a diagram showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the first embodiment. 3 is a diagram showing the arrangement of the illumination area and the projection area of the exposure device shown in FIG. 2. 4 is a diagram showing the structure of the projection optical system of the exposure device shown in FIG. 2.
如圖2所示,處理裝置U3包含曝光裝置(處理機構)EX、搬送裝置9、以及溫度調節裝置60。曝光裝置EX,係以搬送裝置9供應基板P(片材、薄膜等)。曝光裝置EX係所謂的掃描曝光裝置,一邊同步驅動圓筒光罩DM之旋轉與可撓性基板P之搬送、一邊將形成在圓筒光罩DM之圖案之像透過投影倍率為等倍(×1)之投影光學系PL(PL1~PL6),投影至基板P。又,圖2所示之曝光裝置EX,係將XYZ正交座標系之Y軸設為與第1滾筒(drum)構件21之旋轉中心線AX1平行。同樣的,曝光裝置EX,係將XYZ正交座標系之Y軸設定為與為旋轉筒之第2滾筒構件22之旋轉中心線AX2平行。As shown in FIG. 2, the processing device U3 includes an exposure device (processing mechanism) EX, a conveying
如圖2所示,曝光裝置EX,具備光罩保持裝置12、照明機構IU、投影光學系PL及控制裝置14。曝光裝置EX,使被保持於光罩保持裝置12之圓筒光罩DM旋轉移動,並以搬送裝置9搬送基板P。照明機構IU,將被保持於光罩保持裝置12之圓筒光罩DM之一部分(照明區域IR),由照明光束EL1以均勻之亮度加以照明。投影光學系PL,將在圓筒光罩DM上之照明區域IR之圖案之像,投影至以搬送裝置9搬送之基板P之一部分(投影區域PA)。隨著圓筒光罩DM之移動,配置在照明區域IR之圓筒光罩DM上之部位變化,另隨著基板P之移動,配置在投影區域PA之基板P上之部位變化。據此,圓筒光罩DM上之既定圖案(光罩圖案)之像即被投影至基板P。控制裝置14控制曝光裝置EX之各部,使各部實施處理。又,本實施形態中,控制裝置14控制搬送裝置9。As shown in FIG. 2, the exposure apparatus EX includes a
又,控制裝置14可以是統籌控制上述元件製造系統1之複數個處理裝置之上位控制裝置5的一部分或全部。此外,控制裝置14亦可以是受上位控制裝置5控制、與上位控制裝置5為不同之另一裝置。控制裝置14,例如包含電腦系統。電腦系統,例如包含CPU及各種記憶體即OS、周邊機器等之硬體。處理裝置U3之各部之動作過程,可以是以程式形式儲存在電腦可讀取之記錄媒體之記憶部,藉由電腦系統讀出並實施此程式,據以進行各種處理。電腦系統,在可連接於網際網路或內部網路系統之情形時,亦包含首頁提供環境(或顯示環境)。又,電腦可讀取之記錄媒體,包含軟碟、光磁碟、ROM、CD-ROM等之可搬媒體、內建於電腦系統之硬碟等之記憶裝置。電腦可讀取之記錄媒體,亦包含在透過網際網路等網路及電話線路等通訊線路送出程式之情形時之通訊線般,能短時間、動態方式保持程式者,以及如此時之伺服器及客戶端之電腦系統内部之揮發性記憶體般,可一定時間保持程式者。再者,程式可以是用以實現處理裝置U3之部分功能者,亦可以是與已儲存在電腦系統中之程式組合來實現處理裝置U3之功能者。上位控制裝置5,與控制裝置14同樣的,可利用電腦系統來加以實現。In addition, the
如圖2所示,光罩保持裝置12,具備保持圓筒光罩DM之第1滾筒構件21、支承第1滾筒構件21之導輥23、根據控制裝置14之控制指令由第1驅動部26驅動第1滾筒構件21之驅動輥24、以及檢測第1滾筒構件21之位置之第1檢測器25。As shown in FIG. 2, the
第1滾筒構件21,係具有從作為既定軸之旋轉中心線AX1(以下,亦稱第1中心軸AX1)以一定半徑彎曲之曲面的圓筒構件,繞既定軸旋轉。第1滾筒構件21,形成圓筒光罩DM上之照明區域IR配置之第1面P1。本實施形態中,第1面P1,包含將線分(母線)繞與此線分平行之軸(第1中心軸AX1)旋轉之面(以下,稱圓筒面)。圓筒面,例如係圓筒之外周面、圓柱之外周面等。第1滾筒構件21係以例如玻璃或石英等構成,為具又一定厚度之圓筒狀,其外周面(圓筒面)形成為第1面P1。亦即,本實施形態中,圓筒光罩DM上之照明區域IR係彎曲成從從旋轉中心線AX1具一定半徑r1之圓筒面狀。如此,第1滾筒構件21具有從既定軸旋轉中心線AX1以一定半徑彎曲之曲面。第1滾筒構件21可被驅動輥24驅動,而繞既定軸旋轉中心線AX1旋轉。The
圓筒光罩DM,係被作成例如於平坦性佳之短條狀極薄玻璃板(例如厚度100μm~500μm)之一面以鉻等遮光層形成有圖案之穿透型的平面狀片型光罩。光罩保持裝置12,使圓筒光罩DM依第1滾筒構件21外周面之曲面彎曲,在捲繞(貼於)於此曲面之狀態下使用。圓筒光罩DM,具有未形成圖案之圖案非形成區域,於圖案非形成區域被安裝於第1滾筒構件21。圓筒光罩DM可相對第1滾筒構件21被釋放。The cylindrical mask DM is made, for example, as a transmissive flat sheet mask in which a light-shielding layer such as chromium is patterned on one side of a short strip-shaped ultra-thin glass plate (for example, a thickness of 100 μm to 500 μm) with good flatness. The
又,亦可取代以極薄玻璃板構成圓筒光罩DM,將該圓筒光罩DM捲繞於由透明圓筒母材構成之第1滾筒構件21,而在透明圓筒母材構成之第1滾筒構件21之外周面直接描繪形成以鉻等之遮光層形成之光罩圖案,來加以一體化。此場合,第1滾筒構件21即作為圓筒光罩DM之圖案之支承構件。Also, instead of forming the cylindrical mask DM with an ultra-thin glass plate, the cylindrical mask DM may be wound around the
第1檢測器25係以光學方式檢測第1滾筒構件21之旋轉位置之物,例如以旋轉編碼器等構成。第1檢測器25,將所檢測之顯示第1滾筒構件21之旋轉位置的資訊,例如,將後述來自編碼器讀頭之2相訊號等輸出至控制裝置14。包含電動馬達等致動器之第1驅動部26,依據從控制裝置14輸入之控制訊號,調整用以使驅動輥24旋轉之扭矩及旋轉速度。控制裝置14根據第1檢測器25之檢測結果控制第1驅動部26,據以控制第1滾筒構件21之旋轉位置。控制裝置14,控制第1滾筒構件21所保持之圓筒光罩DM之旋轉位置與旋轉速度之一方或双方。The
第2滾筒構件22,係具有從作為既定軸之旋轉中心線AX2(以下,亦稱第2中心軸AX2)以一定半徑彎曲之曲面(第1曲面)的圓筒構件,為繞既定軸旋轉之旋轉筒。第2滾筒構件22,形成將包含來自投影光學系PL之成像光束投射之基板P上之投影區域PA的一部分支承為圓弧狀(圓筒狀)之第2面(支承面)P2。又,第2滾筒構件22,係藉由從包含電動馬達等致動器之第2驅動部36供應之扭矩而旋轉之驅動輥DR5。The
如前所述,第2滾筒構件22係驅動輥DR5,並兼作為支承曝光(處理)對象基板P之基板支承構件(基板載台)。亦即,第2滾筒構件22可以是曝光裝置EX之一部分。第2滾筒構件22,並能繞第2滾筒構件22之旋轉中心線AX2(第2中心軸AX2)旋轉,基板P順著第2滾筒構件22上之外周面(圓筒面)彎曲成圓筒面狀,於彎曲部分之一部分配置投影區域PA。As described above, the
本實施形態中,到達投影區域PA之成像光束EL2中、通過投影區域PA之各中心點的主光線,如圖2所示,從第2滾筒構件22之第2中心軸AX2看,到達夾著中心面P3分別配置在於周方向角度θ之位置的第1特定位置PX1、第2特定位置PX2。而從旋轉中心線AX2看,位在第1特定位置PX1與第2特定位置PX2之間之特定位置PX,則為在第2滾筒構件22之曲面之基板P被平均曝光之區域的中心。In this embodiment, among the imaging light beams EL2 reaching the projection area PA, the chief ray passing through each center point of the projection area PA, as shown in FIG. 2, is seen from the second central axis AX2 of the
搬送裝置9,具備驅動輥DR4、第2滾筒構件22(驅動輥DR5)、及驅動輥DR6。搬送裝置9,以基板P通過第1特定位置PX1、特定位置PX及第2特定位置PX2之方式,於搬送基板P之搬送方向移動基板P。第2驅動部36依據從控制裝置14輸出之控制訊號,調整使第2滾筒構件22旋轉之扭矩。The conveying
本實施形態中,從搬送路徑之上游往驅動輥DR4搬送之基板P,經由驅動輥DR4搬送往溫度調節裝置60。溫度調節裝置60依據從控制裝置14輸出之控制訊號,調節往第2滾筒構件22供應前之基板P之溫度。經由溫度調節裝置60、溫度被調節之基板P,被引導至第1導件31、第2導件32,往第2滾筒構件22搬送。基板P被第2滾筒構件22之表面支承,被搬送往第3導件33。經由第3導件33之基板P,被搬送往搬送路徑之下游。又,第2滾筒構件22(驅動輥DR5)之旋轉中心線AX2與驅動輥DR4、DR6之各旋轉中心線,皆設定為與Y軸平行。In this embodiment, the substrate P conveyed to the driving roller DR4 from the upstream of the conveying path is conveyed to the
於第2滾筒構件22之周圍配置有限制搬送基板P之搬送方向、且引導基板P之第1導件31、第2導件32及第3導件33。第2滾筒構件22,捲繞基板P之一部分,支承從基板P開始接觸第2面P2之曲面之搬送方向進入位置IA起至基板P開始脫離第2面P2之曲面之搬送方向離脱位置OA為止的基板P。第2導件32及第3導件33,例如,藉由往基板P之搬送方向移動,以調整於搬送路徑中作用於基板P之張力等。又,第2導件32及第3導件33,例如,可藉由移動於基板P之搬送方向,以調整捲繞於第2滾筒構件22外周之上述進入位置IA及離脱位置OA等。此外,搬送裝置9、第1導件31、第2導件32及第3導件33,只要能沿投影光學系PL之投影區域PA搬送基板P即可,搬送裝置9、第1導件31、第2導件32及第3導件33之構成可適當的加以變更。Around the
第2檢測器35,例如係以旋轉編碼器等構成,以光學方式檢測第2滾筒構件22之旋轉位置。第2檢測器35,將所檢測之顯示第2滾筒構件22之旋轉位置的資訊(例如,後述來自編碼器讀頭EN1、EN2、EN3、EN4、EN5之2相訊號等)輸出至控制裝置14。控制裝置14根據第2檢測器35之檢測結果控制第2驅動部36,以控制第2滾筒構件22之旋轉位置,來使第1滾筒構件21(圓筒光罩DM)與第2滾筒構件22同步移動(同步旋轉)。又,關於第2檢測器35之詳細構成,留待後敘。The
本實施形態之曝光裝置EX,係設定為所謂之搭載多透鏡方式之投影光學系PL的曝光裝置。投影光學系PL具備投影圓筒光罩DM之圖案中之部分像的複數個投影模組。例如,圖2中,於中心面P3左側於Y方向以一定間隔配置有3個投影模組(投影光學系)PL1、PL3、PL5,於中心面P3右側亦於Y方向以一定間隔配置有3個投影模組(投影光學系)PL2、PL4、PL6。The exposure device EX of this embodiment is set as an exposure device equipped with a so-called multi-lens projection optical system PL. The projection optical system PL includes a plurality of projection modules for projecting partial images in the pattern of the cylindrical mask DM. For example, in FIG. 2, three projection modules (projection optical systems) PL1, PL3, PL5 are arranged at regular intervals in the Y direction on the left side of the center plane P3, and 3 projection modules (projection optics) PL1, PL3, and PL5 are arranged at regular intervals in the Y direction on the right side of the center plane P3. One projection module (projection optics) PL2, PL4, PL6.
此種多透鏡方式之曝光裝置EX,係將以複數個投影模組PL1~PL6曝光之區域(投影區域PA1~PA6)之Y方向端部藉掃描加以彼此重疊,據以投影所欲圖案之全體像。此種曝光裝置EX,即使是在圓筒光罩DM上圖案之Y方向尺寸大、而必然係處理Y方向寬度大的基板P之情形時,僅需於Y方向増設投影模組PL、與對應投影模組PL之照明機構IU側模組即可,因此具有可輕易因應面板尺寸(基板P寬度)大型化的優點。This type of multi-lens exposure device EX overlaps the Y-direction ends of the areas (projection areas PA1 to PA6) exposed by a plurality of projection modules PL1 to PL6 by scanning to project the entire desired pattern Like. In this type of exposure device EX, even when the Y-direction dimension of the pattern on the cylindrical mask DM is large, and the substrate P with a large width in the Y-direction is inevitably processed, it is only necessary to increase the projection module PL in the Y direction, and the corresponding The IU side module of the lighting mechanism of the projection module PL is sufficient, so it has the advantage of being able to easily adapt to the enlargement of the panel size (width of the substrate P).
又,曝光裝置EX可以不是多透鏡方式的。例如,在基板P之寬度方向尺寸某種程度較小之情形等時,曝光裝置EX可以是以1個投影模組將圖案全寬之像投影至基板P。又,複數個投影模組PL1~PL6,可分別是投影對應1個元件之圖案。亦即,曝光裝置EX可將複數個元件用之圖案,以複數個投影模組同時進行投影。In addition, the exposure device EX may not be of a multi-lens type. For example, when the widthwise dimension of the substrate P is relatively small, the exposure device EX may use one projection module to project the full-width image of the pattern onto the substrate P. In addition, the plurality of projection modules PL1 to PL6 can each project a pattern corresponding to one element. That is, the exposure device EX can simultaneously project the patterns used by multiple elements with multiple projection modules.
本實施形態之照明機構IU,具備光源裝置13及照明光學系。照明光學系,具備對應複數個投影模組PL1~PL6之各個而於Y軸方向排列之複數個(例如6個)照明模組IL。光源裝置13,包含例如水銀燈等之燈光源、或雷射二極體、發光二極體(LED)等之固態光源。光源裝置13射出之照明光,例如係從燈光源射出之輝線(g線、h線、i線)、KrF準分子雷射光(波長248nm)等之遠紫外光(DUV光)、ArF準分子雷射光(波長193nm)等。從光源裝置13射出之照明光,其照度分布被均勻化後,透過例如光纖等之導光構件,被分至複數個照明模組IL。The illumination mechanism IU of this embodiment includes a
複數個照明模組IL之各個,包含透鏡等之複數個光學構件。本實施形中,將從光源裝置13射出而通過複數個照明模組IL中任一者之光稱為照明光束EL1。複數個照明模組IL之各個,包含例如積分光學系、棒狀透鏡、複眼透鏡等,以均勻照度分布之照明光束EL1照明照明區域IR。本實施形態中,複數個照明模組IL配置在圓筒光罩DM之内側。複數個照明模組IL之各個,從圓筒光罩DM之内側照明形成在圓筒光罩DM外周面之光罩圖案之各照明區域IR。Each of the plurality of illumination modules IL includes a plurality of optical components such as lenses. In this embodiment, the light emitted from the
圖3係顯示本實施形態之照明區域IR及投影區域PA之配置的圖。又,圖3中,顯示了-Z側所視之配置在第1滾筒構件21之圓筒光罩DM上之照明區域IR的俯視圖(圖3中左側之圖)、與從+Z側所視之配置在第2滾筒構件22之基板P上之投影區域PA的俯視圖(圖3中右側之圖)。圖3中之符號Xs,係顯示第1滾筒構件21或第2滾筒構件22之旋轉方向(移動方向)。FIG. 3 is a diagram showing the arrangement of the illumination area IR and the projection area PA of this embodiment. In addition, FIG. 3 shows a plan view of the illumination area IR (the left side view in FIG. 3) of the cylindrical mask DM of the
複數個照明模組IL,分別照明圓筒光罩DM上之第1至第6照明區域IR1~IR6。例如,第1照明模組IL係照明第1照明區域IR1、第2照明模組IL則照明第2照明區域IR2。A plurality of illumination modules IL respectively illuminate the first to sixth illumination areas IR1 to IR6 on the cylindrical mask DM. For example, the first illumination module IL illuminates the first illumination area IR1 and the second illumination module IL illuminates the second illumination area IR2.
第1照明區域IR1雖係於Y方向細長之梯形區域加以說明,但如投影光學系(投影模組)PL般係形成中間像面之構成之投影光學系時,由於可在該中間像之位置配置具有梯形開口之視野光闌板,因此亦可以是包含該梯形開口之長方形區域。第3照明區域IR3及第5照明區域IR5分別是與第1照明區域IR1相同形狀之區域,於Y軸方向相隔一定間隔配置。又,第2照明區域IR2係就中心面P3與第1照明區域IR1為對稱之梯形(或長方形)區域。第4照明區域IR4及第6照明區域IR6分別係與第2照明區域IR2相同形狀之區域,於Y軸方向相隔一定間隔配置。Although the first illumination region IR1 is described as a slender trapezoidal region in the Y direction, when it is a projection optical system that forms an intermediate image plane like a projection optical system (projection module) PL, it can be positioned at the intermediate image It is equipped with a field diaphragm with a trapezoidal opening, so it can also be a rectangular area containing the trapezoidal opening. The third illumination area IR3 and the fifth illumination area IR5 are areas of the same shape as the first illumination area IR1, and are arranged at regular intervals in the Y-axis direction. In addition, the second illumination area IR2 is a symmetrical trapezoidal (or rectangular) area with respect to the center plane P3 and the first illumination area IR1. The fourth illumination area IR4 and the sixth illumination area IR6 are areas of the same shape as the second illumination area IR2, and are arranged at regular intervals in the Y-axis direction.
如圖3所示,第1至第6照明區域IR1~IR6之各個,在沿第1面P1之周方向看時,係配置成相鄰梯形照明區域之斜邊部之三角部重疊(overlap)。因此,例如,藉第1滾筒構件21之旋轉而通過第1照明區域IR1之圓筒光罩DM上的第1區域A1,與藉第1滾筒構件21之旋轉而通過第2照明區域IR2之圓筒光罩DM上的第2區域A2部分重疊。As shown in Fig. 3, each of the first to sixth illumination areas IR1 to IR6, when viewed in the circumferential direction of the first surface P1, is arranged so that the triangles of the hypotenuses of the adjacent trapezoidal illumination areas overlap (overlap) . Therefore, for example, the first area A1 on the cylindrical mask DM that passes through the first illumination area IR1 by the rotation of the
本實施形態中,圓筒光罩DM包含形成有圖案之圖案形成區域A3、與沒有形成圖案之圖案非形成區域A4。該圖案非形成區域A4係配置成以框狀圍繞圖案形成區域A3,具有遮蔽照明光束EL1之特性。圓筒光罩DM之圖案形成區域A3隨著第1滾筒構件21之旋轉而移動於移動方向Xs,圖案形成區域A3中之Y軸方向之各部分區域,通過第1至第6照明區域IR1~IR6中之一個。換言之,第1至第6照明區域IR1~IR6係配置成能覆蓋圖案形成區域A3之Y軸方向全寬。In this embodiment, the cylindrical mask DM includes a pattern forming area A3 where a pattern is formed, and a pattern non-forming area A4 where a pattern is not formed. The pattern non-formation area A4 is arranged to surround the pattern formation area A3 in a frame shape, and has the characteristic of shielding the illumination light beam EL1. The pattern forming area A3 of the cylindrical mask DM moves in the moving direction Xs along with the rotation of the
如圖2所示,排列於Y軸方向之複數個投影模組PL1~PL6之各個,與第1至第6照明模組IL之各個1對1對應,將被對應之照明模組照明之照明區域IR内出現之圓筒光罩DM之部分圖案之像,投影至基板P上之各投影區域PA。As shown in Figure 2, each of the plurality of projection modules PL1 to PL6 arranged in the Y-axis direction corresponds to each of the first to sixth lighting modules IL one-to-one, and will be illuminated by the corresponding lighting module The image of a part of the pattern of the cylindrical mask DM appearing in the area IR is projected onto each projection area PA on the substrate P.
例如,第1投影模組PL1與第1照明模組IL對應,將被第1照明模組IL照明之第1照明區域IR1(參照圖3)中之圓筒光罩DM之圖案之像,投影至基板P上之第1投影區域PA1。第3投影模組PL3、第5投影模組PL5,分別與第3、第5照明模組IL對應。第3投影模組PL3及第5投影模組PL5,從Y軸方向看,配置在與第1投影模組PL1重疊之位置。For example, the first projection module PL1 corresponds to the first illumination module IL, and projects the image of the cylindrical mask DM in the first illumination area IR1 (refer to FIG. 3) illuminated by the first illumination module IL. To the first projection area PA1 on the substrate P. The third projection module PL3 and the fifth projection module PL5 correspond to the third and fifth illumination modules IL, respectively. The third projection module PL3 and the fifth projection module PL5 are arranged at positions overlapping the first projection module PL1 when viewed from the Y-axis direction.
又,第2投影模組PL2與第2照明模組IL對應,將被第2照明模組IL照明之第2照明區域IR2(參照圖3)中之圓筒光罩DM之圖案之像,投影至基板P上之第2投影區域PA2。第2投影模組PL2,從Y軸方向看,配置在相對第1投影模組PL1夾著中心面P3對稱之位置。In addition, the second projection module PL2 corresponds to the second illumination module IL, and projects the image of the cylindrical mask DM in the second illumination area IR2 (refer to FIG. 3) illuminated by the second illumination module IL. To the second projection area PA2 on the substrate P. The second projection module PL2 is arranged in a symmetrical position with respect to the first projection module PL1 across the center plane P3 when viewed from the Y-axis direction.
第4投影模組PL4、第6投影模組PL6,分別與第4、第6照明模組IL對應配置,第4投影模組PL4及第6投影模組PL6,從Y軸方向看,配置在與第2投影模組PL2重疊之位置。The fourth projection module PL4 and the sixth projection module PL6 are respectively arranged corresponding to the fourth and sixth lighting modules IL. The fourth projection module PL4 and the sixth projection module PL6 are arranged in the Y-axis direction The position overlapping with the second projection module PL2.
又,本實施形態中,係設從照明機構IU之各照明模組IL到達圓筒光罩DM上之照明區域IR1~IR6之光為照明光束EL1。又,將受到對應各照明區域IR1~IR6中出現之圓筒光罩DM之部分圖案之強度分布調變後射入各投影模組PL1~PL6而到達各投影區域PA1~PA6之光,設為成像光束EL2。而到達各投影區域PA1~PA6之成像光束EL2中、通過投影區域PA1~PA6之各中心點之主光線,如圖2所示,從第2滾筒構件22之第2中心軸AX2看,分別配置在夾著中心面P3於周方角度θ之位置(特定位置)。In addition, in this embodiment, the light from each illumination module IL of the illumination mechanism IU to the illumination regions IR1 to IR6 on the cylindrical mask DM is assumed to be the illumination light beam EL1. In addition, the intensity distribution of the partial pattern corresponding to the cylindrical mask DM appearing in each illumination area IR1 to IR6 is modulated and then enters each projection module PL1 to PL6 to reach each projection area PA1 to PA6 as Imaging beam EL2. The chief ray passing through the center points of the projection areas PA1 to PA6 among the imaging light beams EL2 reaching the projection areas PA1 to PA6 are arranged separately as shown in FIG. 2 when viewed from the second central axis AX2 of the
如圖3所示,在第1照明區域IR1之圖案之像被投影於第1投影區域PA1、在第3照明區域IR3之圖案之像被投影於第3投影區域PA3、在第5照明區域IR5之圖案之像被投影於第5投影區域PA5。本實施形態中,第1投影區域PA1、第3投影區域PA3及第5投影區域PA5係於Y軸方向排列配置成一行。As shown in FIG. 3, the image of the pattern in the first illumination area IR1 is projected on the first projection area PA1, and the image of the pattern in the third illumination area IR3 is projected on the third projection area PA3 and the fifth illumination area IR5. The image of the pattern is projected on the fifth projection area PA5. In this embodiment, the first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged in a row in the Y-axis direction.
又,在第2照明區域IR2之圖案之像被投影於第2投影區域PA2。本實施形態中,第2投影區域PA2,從Y軸方向看,就中心面P3與第1投影區域PA1對稱配置。又,在第4照明區域IR4之圖案之像被投影於第4投影區域PA4、在第6照明區域IR6之圖案之像被投影於第6投影區域PA6。本實施形態中、第2投影區域PA2、第4投影區域PA4及第6投影區域PA6係於Y軸方向排列配置成一行。In addition, the image of the pattern in the second illumination area IR2 is projected on the second projection area PA2. In this embodiment, the second projection area PA2 is arranged symmetrically with respect to the center plane P3 and the first projection area PA1 when viewed from the Y-axis direction. In addition, the image of the pattern in the fourth illumination area IR4 is projected on the fourth projection area PA4, and the image of the pattern in the sixth illumination area IR6 is projected on the sixth projection area PA6. In this embodiment, the second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are arranged in a row in the Y-axis direction.
第1至第6投影區域PA1~PA6之各個,在沿第2面P2之周方向觀察時,係配置成在與第2中心軸AX2平行之方向相鄰投影區域(奇數個與偶數個)彼此之端部(梯形之三角部分)重疊。因此,例如,藉第2滾筒構件22之旋轉而通過第1投影區域PA1之基板P上之第3區域A5,與藉第2滾筒構件22之旋轉而通過第2投影區域PA2之基板P上之第4區域A6部分重疊。第1投影區域PA1與第2投影區域PA2,其各個之形狀等被設定成在第3區域A5與第4區域A6重疊之區域之曝光量,與在不重疊區域之曝光量實質相同。而第1~第6投影區域PA1~PA6,被配置成可覆蓋曝光至基板P上之曝光區域A7之Y方向全寬。Each of the first to sixth projection areas PA1 to PA6, when viewed in the circumferential direction of the second surface P2, is arranged so that the projection areas (odd and even) adjacent to each other in a direction parallel to the second central axis AX2 The ends (the triangular part of the trapezoid) overlap. Therefore, for example, between the third area A5 on the substrate P passing through the first projection area PA1 by the rotation of the
其次,參照圖4説明本實施形態之投影光學系PL之詳細構成。又,本實施形態中,第2投影模組PL2~第5投影模組PL5之各個,與第1投影模組PL1同樣構成。因此,以第1投影模組PL1代表投影光學系PL說明其構成,第2投影模組PL2~第5投影模組PL5各個之説明則省略。Next, the detailed structure of the projection optical system PL of this embodiment will be described with reference to FIG. 4. In addition, in this embodiment, each of the second projection module PL2 to the fifth projection module PL5 has the same configuration as the first projection module PL1. Therefore, the first projection module PL1 represents the projection optical system PL to describe its configuration, and the description of each of the second projection module PL2 to the fifth projection module PL5 is omitted.
圖4所示之第1投影模組PL1,具備將配置在第1照明區域IR1之圓筒光罩DM之圖案之像成像於中間像面P7的第1光學系41、將第1光學系41所形成之中間像之至少一部分再成像於基板P之第1投影區域PA1的第2光學系42、以及配置在形成中間像之中間像面P7的第1視野光闌43。The first projection module PL1 shown in FIG. 4 includes a first
又,第1投影模組PL1,具備焦點修正光學構件44、像位移(shift)修正光學構件45、旋轉(rotation)修正機構46及倍率修正用光學構件47。焦點修正光學構件44,係對基板P上形成之光罩之圖案像(以下,稱投影像)之焦點狀態進行微調的焦點調整裝置。又,像位移修正光學構件45係使投影像在像面内微幅横位移的位移調整裝置。倍率修正用光學構件47係微修正投影像之倍率的倍率調整裝置。旋轉修正機構46則係使投影像在像面内微幅旋轉的位移調整裝置。In addition, the first projection module PL1 includes a focus correction
來自圓筒光罩DM之圖案之成像光束EL2,從第1照明區域IR1往法線方向(D1)射出,通過焦點修正光學構件44射入像位移修正光學構件45。穿透像位移修正光學構件45之成像光束EL2於作為第1光學系41之要件的第1偏向構件50之第1反射面(平面鏡)p4反射,通過第1透鏡群51被第1凹面鏡52反射,再次通過第1透鏡群51於第1偏向構件50之第2反射面(平面鏡)p5反射後,射入第1視野光闌43。通過第1視野光闌43之成像光束EL2,於作為第2光學系42之要件的第2偏向構件57之第3反射面(平面鏡)p8反射,通過第2透鏡群58被第2凹面鏡59反射,再次通過第2透鏡群58於第2偏向構件57之第4反射面(平面鏡)p9反射後,射入倍率修正用光學構件47。從倍率修正用光學構件47射出之成像光束EL2,射入基板P上之第1投影區域PA1,出現在第1照明區域IR1内之圖案之像被以等倍(×1)投影至第1投影區域PA1。The imaging light beam EL2 from the pattern of the cylindrical mask DM is emitted in the normal direction (D1) from the first illumination area IR1, and enters the image displacement correction
設圖2所示之圓筒光罩DM之半徑為半徑r1、捲繞在第2滾筒構件22之基板P之圓筒狀表面之半徑為半徑r2,當使半徑r1與半徑r2相等之情形時,在各投影模組PL1~PL6之光罩側之成像光束EL2之主光線,雖被傾斜而通過圓筒光罩DM之旋轉中心線AX1,其傾角與在基板P側之成像光束EL2之主光線之傾角θ(相對中心面P3為±θ)相同じ。Assuming that the radius of the cylindrical mask DM shown in FIG. 2 is a radius r1, and the radius of the cylindrical surface of the substrate P wound on the
第2偏向構件57之第3反射面p8與第2光軸AX4所夾之角度θ3、與第1偏向構件50之第2反射面p5與第1光軸AX3所夾角度θ2實質相同。又,第2偏向構件57之第4反射面p9與第2光軸AX4所夾角度θ4、與第1偏向構件50之第1反射面p4與第1光軸AX3所夾角度θ1實質相同。為賦予上述傾角θ,使圖4所示之第1偏向構件50之第1反射面p4相對第1光軸AX3之角度θ1較45°小Δθ1,並使第2偏向構件57之第4反射面p9相對第2光軸AX4之角度θ4較45°小Δθ4。Δθ1與Δθ4,相對圖2中所示之角度θ,係設定成Δθ1=Δθ4=θ/2之關係。The angle θ3 between the third reflecting surface p8 of the second deflecting
圖5係適用於圖2之處理裝置(曝光裝置)之旋轉筒的立體圖。圖6係用以說明適用於圖2之處理裝置(曝光裝置)之檢測探針與讀取裝置間之關係的立體圖。圖7係從旋轉中心線AX2方向觀察第1實施形態之標尺圓盤SD,用以說明讀取裝置之位置的説明圖。又,圖5中,為方便起見,僅顯示第2至第4投影區域PA2~PA4之圖示,而省略了第1、第5、第6投影區域PA1、PA5、PA6之圖示。Fig. 5 is a perspective view of a rotating drum suitable for the processing device (exposure device) of Fig. 2; 6 is a perspective view for explaining the relationship between the detection probe and the reading device applicable to the processing device (exposure device) of FIG. 2. FIG. 7 is an explanatory diagram of the scale disc SD of the first embodiment viewed from the direction of the rotation center line AX2 to explain the position of the reading device. In addition, in FIG. 5, for convenience, only the illustrations of the second to fourth projection areas PA2 to PA4 are shown, and the illustrations of the first, fifth, and sixth projection areas PA1, PA5, PA6 are omitted.
圖2所示之第2檢測器35係以光學方式檢測第2滾筒構件22之旋轉位置之物,包含高真圓度之標尺圓盤(標尺構件)SD與讀取裝置編碼器讀頭EN1、EN2、EN3、EN4、EN5。The
標尺圓盤SD固定在與第2滾筒構件22之旋轉軸ST正交之第2滾筒構件22之端部。因此,標尺圓盤SD繞旋轉中心線AX2與旋轉軸ST一體旋轉。於標尺圓盤SD之外周面刻有作為標尺部GP之例如刻度(格子)。標尺部GP係沿第2滾筒構件22旋轉之周方向排列成環狀,且與第2滾筒構件22一起於旋轉軸ST(第2中心軸AX2)周圍旋轉。編碼器讀頭EN1、EN2、EN3、EN4、EN5,從旋轉軸ST(第2中心軸AX2)看,配置在標尺部GP之周圍。編碼器讀頭EN1、EN2、EN3、EN4、EN5與標尺部GP對向配置,可以非接觸方式讀取標尺部GP。又,編碼器讀頭EN1、EN2、EN3、EN4、EN5係配置在第2滾筒構件22之周方向之不同位置。The scale disc SD is fixed to the end of the
編碼器讀頭EN1、EN2、EN3、EN4、EN5係對標尺部GP之切線方向(XZ面内)變位之變動具有測量感度(檢測感度)的讀取裝置。如圖5所示,將編碼器讀頭EN1、EN2、EN3、EN4、EN5之設置方位(在以旋轉中心線AX2為中心之XZ面内的角度方向)以設置方位線Le1、Le2、Le3、Le4、Le5表示時,如圖7所示,係以設置方位線Le1、Le2相對中心面P3成角度±θ°之方式,配置編碼器讀頭EN1、EN2。又,本實施形態中,例如角度θ係15°。Encoder reading heads EN1, EN2, EN3, EN4, EN5 are reading devices that have measurement sensitivity (detection sensitivity) for changes in the tangential direction (in XZ plane) of the scale part GP. As shown in Figure 5, set the orientation of the encoder reading heads EN1, EN2, EN3, EN4, EN5 (the angular direction in the XZ plane centered on the rotation center line AX2) to set the orientation lines Le1, Le2, Le3, When Le4 and Le5 are represented, as shown in Figure 7, the encoder reading heads EN1 and EN2 are arranged in such a way that the azimuth lines Le1 and Le2 are set at an angle of ±θ° relative to the center plane P3. In this embodiment, the angle θ is 15°, for example.
圖4所示之投影模組PL1~PL6,係以基板P為被處理物體,對基板P施以照射光之照射處理之曝光裝置EX的處理部。曝光裝置EX對基板P,將2條成像光束EL2之主光線射入基板P。投影模組PL1、PL3、PL5為第1處理部,投影模組PL2、PL4、PL6為第2處理部,對基板P將2條成像光束EL2之主光線分別射入基板P之位置,為對基板P施以照射光之照射處理的特定位置。特定位置係從第2滾筒構件22之第2中心軸AX2看,在第2滾筒構件22上之曲面之基板P中、夾著中心面P3於周方向之角度±θ的位置。編碼器讀頭EN1之設置方位線Le1,與通過奇數個投影模組PL1、PL3、PL5之各投影區域(投影視野)PA1、PA3、PA5之中心點之主光線相對中心面P3之傾角θ一致,編碼器讀頭EN2之設置方位線Le2則與通過偶數個投影模組PL2、PL4、PL6之各投影區域(投影視野)PA2、PA4、PA6之中心點之主光線相對中心面P3之傾角θ一致。因此,編碼器讀頭EN1係讀取位在連結第1特定位置PX1與第2中心軸AX2之方向之標尺部GP的讀取裝置。而編碼器讀頭EN2則係讀取位在連結第2特定位置PX2與第2中心軸AX2之方向之標尺部GP的讀取裝置。The projection modules PL1 to PL6 shown in FIG. 4 are the processing parts of the exposure apparatus EX that uses the substrate P as the object to be processed and applies the irradiation processing of irradiating light to the substrate P. The exposure device EX injects the principal rays of the two imaging beams EL2 into the substrate P on the substrate P. The projection modules PL1, PL3, and PL5 are the first processing units, and the projection modules PL2, PL4, PL6 are the second processing units. The principal rays of the two imaging beams EL2 are respectively incident on the substrate P to the position of the substrate P. A specific position where the substrate P is irradiated with light. The specific position is a position at an angle ±θ between the center plane P3 in the circumferential direction in the curved substrate P on the
編碼器讀頭EN4配置在基板P之搬送方向之後方側、也就是配置在曝光位置(投影區域)之前方,被設定在朝基板P之搬送方向後方側將編碼器讀頭EN1之設置方位線Le1繞旋轉中心線AX2之軸旋轉的設置方位線Le4上。又,編碼器讀頭EN5則係設定在朝基板P之搬送方向後方側將編碼器讀頭EN1之設置方位線Le1繞旋轉中心線AX2之軸旋轉的設置方位線Le5上。The encoder head EN4 is arranged on the back side of the substrate P in the conveying direction, that is, before the exposure position (projection area), and is set to the rear side of the substrate P in the conveying direction. Set the orientation line of the encoder head EN1 Le1 is on the set azimuth line Le4 that rotates around the axis of the rotation center line AX2. In addition, the encoder head EN5 is set on the installation azimuth line Le5 that rotates the installation azimuth line Le1 of the encoder head EN1 around the axis of the rotation center line AX2 toward the rear side of the conveyance direction of the substrate P.
又,編碼器讀頭EN3係相對編碼器讀頭EN1、EN2配置在夾著旋轉中心線AX2之相反側,其設置方位線Le3被設定在中心面P3上。In addition, the encoder head EN3 is arranged on the opposite side of the encoder heads EN1 and EN2 sandwiching the rotation center line AX2, and the installation direction line Le3 is set on the center plane P3.
標尺構件標尺圓盤SD係以低熱膨脹之金屬、玻璃、陶瓷等為母材,為提高測量解析力,盡可能做成具有大直徑(例如直徑20cm以上)。圖5中,標尺圓盤SD之直徑雖相對第2滾筒構件22之直徑圖示的較小,但可藉由使第2滾筒構件22之外周面中、捲繞有基板P之外周面之直徑與標尺圓盤SD之標尺部GP之直徑一致(使大致一致),可進一步縮小所謂的測量阿貝誤差。Scale member The scale disc SD is made of metal, glass, ceramics, etc. with low thermal expansion as the base material. In order to improve the measurement resolution, it should be made as large as possible (for example, 20 cm or more in diameter). In FIG. 5, although the diameter of the scale disc SD is smaller than that of the
刻設於標尺部GP周方向之刻度(格子)之最小間距,受限於加工標尺圓盤SD之刻度刻線裝置等之性能。因此,若將標尺圓盤SD之直徑做大的話,相應於此,對應最小間距之角度測量解析能力亦能提高。The minimum spacing of the scale (grid) engraved in the circumferential direction of the scale part GP is limited by the performance of the scale marking device for processing the scale disc SD. Therefore, if the diameter of the scale disc SD is made larger, correspondingly, the angle measurement resolution capability corresponding to the minimum pitch can also be improved.
將配置讀取標尺部GP之編碼器讀頭EN1、EN2的設置方位線Le1、Le2之方向,從旋轉中心線AX2看時,藉由使相對基板P成像光束EL2之主光線射入基板P之方向相同,例如,即使因支承旋轉軸ST之軸承(bearing)將故障而有些微間隙(2μm~3μm程度)而使第2滾筒構件22於X方向產生位移時,亦能以編碼器讀頭EN1、EN2高精度測量可能因此位移而在投影區域PA1~PA6内發生之在基板P之搬送方向(Xs)的位置誤差。When viewing the direction of the azimuth lines Le1 and Le2 of the encoder heads EN1 and EN2 that are equipped with the reading scale part GP, when viewed from the rotation center line AX2, the principal ray of the imaging beam EL2 against the substrate P is incident on the substrate P The direction is the same. For example, even if the
如圖6所示,為了在被第2滾筒構件22之曲面支承之基板P之一部分,將以圖2所示之投影光學系PL投影之光罩圖案之一部分之像與基板P相對的對準,設有檢測預先形成在基板P之對準標記等的對準顯微鏡AMG1、AMG2。對準顯微鏡AMG1、AMG2,係具有用以檢測基板P上離散或連續形成之特定圖案的檢測探針,以此檢測探針之檢測區域設定在較上述特定位置靠基板P之搬送方向後方側之方式,配置在第2滾筒構件22周圍的圖案檢測裝置。As shown in FIG. 6, in order to align the image of a part of the mask pattern projected by the projection optical system PL shown in FIG. 2 with the substrate P on a part of the substrate P supported by the curved surface of the
如圖6所示,對準顯微鏡AMG1、AMG2具有於Y軸方向(基板P之寬度方向)排列成一行之複數個(例如4個)檢測探針。對準顯微鏡AMG1、AMG2可以第2滾筒構件22之Y軸方向兩側端之檢測探針,隨時觀察或檢測形成在基板P兩端附近之對準標記。且對準顯微鏡AMG1、AMG2可以第2滾筒構件22之Y軸方向(基板P之寬度方向)兩側端以外之檢測探針,觀察或檢測例如形成在基板P上沿長邊方向形成之複數個顯示面板之圖案形成區域間之留白部等的對準標記。As shown in FIG. 6, the alignment microscopes AMG1 and AMG2 have a plurality of (for example, 4) detection probes arranged in a row in the Y-axis direction (the width direction of the substrate P). The alignment microscopes AMG1 and AMG2 can observe or detect the alignment marks formed near the two ends of the substrate P with the detection probes at both ends of the
如圖6及圖7所示,係以從XZ面内且旋轉中心線AX2看時,與對準顯微鏡AMG1之基板P之觀察方向AM1(朝第2中心軸AX2)之檢測中心同一方向之方式,在設定於標尺部GP之直徑方向之設置方位線Le4上,配置編碼器讀頭EN4。又,係以從XZ面内且旋轉中心線AX2看時,與對準顯微鏡AMG2之基板P之觀察方向AM2(朝旋轉中心線AX2)之檢測中心同一方向之方式,在設定於標尺部GP之直徑方向之設置方位線Le5上,配置編碼器讀頭EN5。如前所述,對準顯微鏡AMG1、AMG2之檢測探針從第2中心軸AX2看時配置在第2滾筒構件22之周圍,以連結編碼器讀頭EN4、EN5之配置位置與第2中心軸AX2之方向(設置方位線Le4、Le5)與連結第2中心軸AX2與對準顯微鏡AMG1、AMG2之檢測區域之方向一致之方式配置。又,配置對準顯微鏡AMG1、AMG2及編碼器讀頭EN4、EN5之旋轉中心線AX2周方向之位置,係設定在基板P開始接觸第2滾筒構件22之進入位置IA與基板P脫離第2滾筒構件22之離脱位置OA之間。As shown in Figures 6 and 7, when viewed from the XZ plane and the rotation center line AX2, it is in the same direction as the detection center of the substrate P of the alignment microscope AMG1 in the observation direction AM1 (toward the second central axis AX2) , Place the encoder read head EN4 on the setting azimuth line Le4 set in the diameter direction of the scale part GP. In addition, when viewed from the XZ plane and the rotation center line AX2, it is set in the same direction as the detection center of the substrate P of the alignment microscope AMG2 in the observation direction AM2 (toward the rotation center line AX2). On the setting azimuth line Le5 in the diameter direction, the encoder read head EN5 is configured. As mentioned above, the detection probes of the alignment microscopes AMG1 and AMG2 are arranged around the
上述對準顯微鏡AMG2之觀察方向AM2係配置在基板P之搬送方向前方側、亦即曝光位置(投影區域)之後方,將形成在基板P之Y方向端部附近之對準標記(形成在數十μm~數百μm對角線内之區域),在基板P被以既定速度搬送之狀態下,以攝影元件等高速的進行影像檢測,於顯微鏡視野(拍攝範圍)高速的進行標記像之取樣(sampling)。於進行該取樣之瞬間,儲存以編碼器讀頭EN5逐次測量之標尺圓盤SD之旋轉角度位置,據以求出基板P上之對準標記之標記位置與第2滾筒構件22之旋轉角度位置間之對應關係。The observation direction AM2 of the alignment microscope AMG2 is arranged on the forward side of the substrate P in the conveying direction, that is, behind the exposure position (projection area), and the alignment mark (formed in the The area within the diagonal line of ten μm to several hundred μm), with the substrate P being transported at a predetermined speed, image detection is performed at high speed with photographic elements, etc., and the marking image is sampled at high speed in the microscope field of view (shooting range) (sampling). At the moment when the sampling is performed, the rotation angle position of the scale disc SD measured successively by the encoder read head EN5 is stored to obtain the mark position of the alignment mark on the substrate P and the rotation angle position of the
另一方面,上述對準顯微鏡AMG1之觀察方向AM1係配置在基板P之搬送方向後方側、亦即曝光位置(投影區域)之前方,將形成在基板P之Y方向端部附近之對準標記(形成在數十μm~數百μm對角線内之區域)之像,與對準顯微鏡AMG2同樣的,以攝影元件等高速的進行取樣,於該取樣之瞬間,儲存以編碼器讀頭EN4逐次測量之標尺圓盤SD之旋轉角度位置,據以求出基板P上之對準標記之標記位置與第2滾筒構件22之旋轉角度位置間之對應關係。On the other hand, the observation direction AM1 of the alignment microscope AMG1 is arranged on the rear side of the substrate P in the conveying direction, that is, in front of the exposure position (projection area), and an alignment mark is formed near the end of the substrate P in the Y direction The image (formed in the area within the diagonal line of tens of μm to hundreds of μm) is the same as the alignment microscope AMG2. The image is sampled at a high speed with photographic elements. At the moment of sampling, the encoder read head EN4 is stored The rotation angle position of the scale disc SD is successively measured to obtain the corresponding relationship between the mark position of the alignment mark on the substrate P and the rotation angle position of the
以對準顯微鏡AMG1檢測過之標記,再以對準顯微鏡AMG2檢測時,將以編碼器讀頭EN4測量並儲存之角度位置與以編碼器讀頭EN5測量並儲存之角度位置的差,與預先經精密校正之2個對準顯微鏡AMG1、AMG2之設置方位線Le4、Le5之開角加以比較。於前述開角度具有誤差之情形時,在進入位置IA與離脱位置OA之間,基板P極有可能在第2滾筒構件22上些微滑動、或於搬送方向(周方向)或與第2中心軸AX2平行之方向(Y軸方向)產生伸縮。When the mark detected by the alignment microscope AMG1 and then the alignment microscope AMG2 is detected, the difference between the angular position measured and stored with the encoder read head EN4 and the angular position measured and stored with the encoder read head EN5 will be compared with the previous Comparing the opening angles of the two alignment microscopes AMG1 and AMG2 with Le4 and Le5 after precise calibration. In the case where the opening angle has an error, between the entry position IA and the release position OA, the substrate P is very likely to slide slightly on the
一般而言,圖案化時之位置誤差,雖係視形成在基板P上之元件圖案之微細度及重疊精度來決定,但例如為了對底圖案層正確的重疊曝光10μm寬之線條圖案,僅能容許數分之一以下之誤差,亦即,換算成基板P上之尺寸時,僅能容許±2μm程度之位置誤差。Generally speaking, the position error during patterning is determined by the fineness and overlap accuracy of the device pattern formed on the substrate P. However, for example, in order to accurately overlap and expose a 10μm wide line pattern to the bottom pattern layer, it can only An error of less than a fraction is allowed, that is, when converted to the size on the substrate P, only a position error of ±2 μm can be allowed.
為實現此種高精度之測量,必須使各對準顯微鏡AMG1、AMG2之標記影像測量方向(在XZ面内之第2滾筒構件22之外周切線方向)與各編碼器讀頭EN4、EN5之測量方向(在XZ面内之標尺部GP之外周切線方向),在容許角度誤差内一致。In order to achieve such high-precision measurement, it is necessary to align the marking image measurement direction of the microscopes AMG1 and AMG2 (the tangential direction of the outer circumference of the
如以上所述,係以和對準顯微鏡AMG1、AMG2之基板P上之對準標記之測量方向(第2滾筒構件22之圓周面之切線方向)一致之方式,配置編碼器讀頭EN4、EN5。因此,在進行對準顯微鏡AMG1、AMG2之基板P(標記)之位置檢測時(影像取樣時),即使第2滾筒構件22(標尺圓盤SD)在XZ面内往與設置方位線Le4或Le5正交之周方向(切線方向)位移時,亦能進行考慮了第2滾筒構件22之位移的高精度位置測量。As described above, the encoder read heads EN4 and EN5 are arranged in a way that is consistent with the measurement direction of the alignment marks on the substrate P of the alignment microscopes AMG1 and AMG2 (the tangent direction of the circumferential surface of the second roller member 22) . Therefore, when the position detection of the substrate P (mark) of the alignment microscopes AMG1 and AMG2 (at the time of image sampling) is performed, even if the second roller member 22 (scale disc SD) moves to and from the XZ plane and sets the azimuth line Le4 or Le5 Even when it is displaced in the orthogonal circumferential direction (tangential direction), it is possible to perform high-precision position measurement in consideration of the displacement of the
由於從第2中心軸AX2看,在標尺圓盤SD之標尺部GP周圍5處配置了編碼器讀頭EN1~EN5,因此藉由組合其中之適當的2個或3個編碼器讀頭之測量値輸出進行運算處理,亦能求出標尺圓盤SD之標尺部GP之真圓度(形狀畸變)、偏心誤差等。 < 溫度調節裝置 >As seen from the second central axis AX2, the encoder read heads EN1~EN5 are arranged at 5 locations around the scale part GP of the scale disc SD, so the measurement by combining two or three encoder read heads is appropriate The value output is subjected to arithmetic processing, and the roundness (shape distortion) and eccentricity error of the scale part GP of the scale disc SD can also be obtained. <Temperature adjustment device >
如前所述,基板P有可能因處理裝置U3内部之溫度環境而在搬送方向(周方向)或與第2中心軸AX2平行之方向(Y軸方向)視基板P之溫度而產生伸縮。伸縮係由基板P之材料物性決定,有會隨著基板P之溫度増加而產生延伸之材料、與隨著基板P之溫度増加而產生縮小之材料。圖8係說明第1實施形態之溫度調節裝置的説明圖。溫度調節裝置60,如圖2所示,係對通過第1特定位置PX1、特定位置PX及第2特定位置PX2之基板P之搬送方向上游側進行溫度調節的裝置。處理裝置U3,其從第1導件31、第2導件32引導之基板P之溫度調節裝置60之溫度調整結束至往第2滾筒構件22之進入位置IA之搬送為止之長度,以盡可能短者較佳,但亦可視以溫度調節裝置60設定之溫度與第2滾筒構件22之溫度間之差來決定。例如,由於第2滾筒構件22一般而言熱容量大,欲改變設定溫度需花時間,因此為了使第2滾筒構件22保持某一固定溫度,係以圖2中之基板支承構件溫度調節裝置73隨時持續地進行調溫。並根據從溫度調節裝置60至進入位置IA之搬送距離、其間之搬送空間之溫度、及基板P之速度,來決定以溫度調節裝置60設定之溫度。例如,第2滾筒構件22之表面溫度為25℃時,以溫度調節裝置60設定之溫度,即係在基板P移動搬送距離分之時間(秒數)後,剛好降至25℃。然而,由於一般而言基板P較薄,會快速的成為環境溫度,因此最好是盡可能的縮短從溫度調節裝置60至進入位置IA之搬送距離,且如上述般預測並控制變化溫度。As described above, the substrate P may expand and contract depending on the temperature of the substrate P in the conveying direction (circumferential direction) or the direction parallel to the second central axis AX2 (Y-axis direction) due to the temperature environment inside the processing device U3. The expansion and contraction is determined by the material properties of the substrate P. There are materials that extend as the temperature of the substrate P increases, and materials that shrink as the temperature of the substrate P increases. Fig. 8 is an explanatory diagram for explaining the temperature adjustment device of the first embodiment. The
溫度調節裝置60具備導件61、媒體送風構件62、送風壓力均勻化構件63、媒體調節裝置71、加熱單元HU、以及冷卻單元CU。媒體送風構件62透過以多孔質材料形成之媒體之送風壓力均勻化構件63,將媒體送至基板P。搬送裝置9使基板P通過導件61與媒體送風構件62之間之空間67。媒體送風構件62將從媒體調節裝置71透過媒體供應管線AP供應之媒體送至導件61側。加熱單元HU係透過媒體供應管線HH將高溫之媒體供應至媒體調節裝置71的第1媒體供應部。冷卻單元CU係透過媒體供應管線CC將溫度較加熱單元HU之高溫媒體低之低溫媒體供應至媒體調節裝置71的第2媒體供應部。媒體調節裝置71,具備調整從媒體供應管線HH供應至媒體供應管線AP之高溫媒體之流量的流量調整閥72H、與調整從媒體供應管線CC供應至媒體供應管線AP之低溫媒體之流量的流量調整閥72C。流量調整閥72H及流量調整閥72C,係以例如電磁閥構成。媒體調節裝置71,可藉由根據控制裝置14之控制訊號之輸出調整通過流量調整閥72H之高溫媒體之量及通過流量調整閥72C之低溫媒體之量,來使供應至媒體送風構件62之高溫媒體與低溫媒體之比。因此,媒體調節裝置71可混合高溫媒體與低溫媒體作為供應至媒體送風構件62之媒體,使之流通。溫度調節裝置60可使任意溫度之媒體流通至導件61周圍、以調節基板P之溫度。又,亦可將與圖8中之送風壓力均勻化構件63同等之構件設置在基板P之相反側,透過與媒體供應管線AP同等之構件將經溫度調整之媒體亦吹送至基板P之相反側。The
基板支承構件溫度調節裝置73係調節為基板支承構件之第2滾筒構件22之溫度的裝置。基板支承構件溫度調節裝置73,具備調整從媒體供應管線HH供應至媒體供應管線AD之高溫媒體之流量的流量調整閥74H、與調整從媒體供應管線CC供應至媒體供應管線AD之低溫媒體之流量的流量調整閥74C。流量調整閥74H及流量調整閥74C係以例如電磁閥構成。基板支承構件溫度調節裝置73,可根據控制裝置14之控制訊號之輸出調整通過流量調整閥74H之高溫媒體之量及通過流量調整閥74C之低溫媒體之量,據以改變供應至第2滾筒構件22之高溫媒體與低溫媒體之比。因此,基板支承構件溫度調節裝置73可混合高溫媒體與低溫媒體來作為供應至第2滾筒構件22内部之媒體,透過媒體供應管線AD使其流通至第2滾筒構件22之内部。基板支承構件溫度調節裝置73,最好是被控制裝置14控制成可將第2滾筒構件22之溫度維持於一定。如此,傳至與第2滾筒構件22之曲面接觸之基板P之熱容量即能大致維持一定,能使在第2滾筒構件22之曲面產生之基板P之伸縮狀態安定。The substrate support member
溫度調節裝置60及基板支承構件溫度調節裝置73雖係將溫度經調整之媒體供應至基板P或第2滾筒構件22之裝置,但媒體可以是使液體於管線中循環,而以放射熱來調節基板P或第2滾筒構件22之溫度。媒體調節裝置71及基板支承構件溫度調節裝置73,例如可將加熱器與散熱片加以組合構成。Although the
檢測被導件61搬送前之基板P之溫度的溫度測量裝置T1,可將檢測結果輸出至控制裝置14。控制裝置14可根據溫度測量裝置T1之檢測結果,對溫度調節裝置60進行前饋控制。又,檢測通過溫度調節裝置60(導件61)後之基板P之溫度的溫度測量裝置T2,可將檢測結果輸出至控制裝置14。可根據溫度測量裝置T2之檢測結果,對溫度調節裝置60進行反饋控制。控制裝置14,可藉由對溫度調節裝置60進行前饋控制及反饋控制中之至少1種,控制從媒體送風構件62送出之媒體之溫度,以提高加至基板P之溫度之精度。例如,溫度測量裝置T1、T2可使用測量基板P放射出之紅外線能量之非接觸式紅外線溫度計等。The temperature measuring device T1 that detects the temperature of the substrate P before being conveyed by the guided
如圖8所示,使基板P通過導件61與媒體送風構件62間之空間67之情形時,於導件61,最好是能具備基板P之支承機構。媒體送風構件62將來自媒體供應管線AP之媒體透過開設在位於送風壓力均勻化構件63之貫通孔AH,送至送風壓力均勻化構件63。送風壓力均勻化構件63,由於例如係多孔質材料,因此可於基板P側之對向面63S,以每單位面積之媒體壓力均等之方式噴出媒體。於導件61具備按壓基板P之Y方向(寬度方向)端部的限制構件64與限制構件65,限制構件64與限制構件65於基板P之搬送時夾在基板P之寬度方向。限制構件65透過軸承BE固定在導件61之内側面。限制構件64透過彈簧SS連接於音圈馬達66之磁石VCMm。依據流於音圈馬達66之線圈VCMc之電流,磁石VCMm之Y方向位置變化,音圈馬達66可使基板P之Y方向位置變化。As shown in FIG. 8, when the substrate P passes through the
如圖2所示,於溫度調節裝置60之内部或搬送方向之出口側,設有檢測預先形成在基板P之對準標記等的對準顯微鏡PMG1。具有於對準顯微鏡PMG1之Y方向(基板P之寬度方向)排列成一行之複數個(例如4個)檢測探針。圖9係說明對準標記之一例的説明圖。圖2所示之對準顯微鏡PMG1,可以導件61之Y方向兩側端之檢測探針,隨時觀察或檢測沿搬送方向α形成在圖9所示之基板P之兩端附近的對準標記ma。As shown in FIG. 2, an alignment microscope PMG1 for detecting alignment marks and the like formed in advance on the substrate P is provided inside the
圖10係以示意方式說明因基板伸縮造成之對準標記之一變化例的説明圖。圖11係顯示修正第1實施形態之處理裝置(曝光裝置)之處理之一程序例的流程圖。如圖10所示,對準顯微鏡AMG1,作為第1檢測探針,在位於觀察方向(檢測方向)AM1之顯微鏡視野(攝影範圍)mam之範圍内檢測對準標記ma。同樣的,對準顯微鏡PMG1,作為第2檢測探針,在位於檢測方向PM1之顯微鏡視野(攝影範圍)map之範圍内檢測對準標記ma。以此方式,對準顯微鏡AMG1及對準顯微鏡PMG1檢測圖10所示之基板P上之特定圖案對準標記ma(步驟S11)。對準顯微鏡AMG1將對準標記ma之影像輸出至控制裝置14,控制裝置14及對準顯微鏡AMG1,作為第1圖案檢測裝置,將對準標記ma作為影像資料儲存至控制裝置14之記憶部。對準顯微鏡PMG1將對準標記ma之影像輸出至控制裝置14,控制裝置14及對準顯微鏡PMG1,作為第2圖案檢測裝置,將對準標記ma作為影像資料儲存至控制裝置14之記憶部。FIG. 10 is an explanatory diagram schematically illustrating a modification example of the alignment mark caused by expansion and contraction of the substrate. Fig. 11 is a flowchart showing an example of a program for correcting the processing device (exposure device) of the first embodiment. As shown in FIG. 10, the alignment microscope AMG1 is used as the first detection probe to detect the alignment mark ma within the scope of the microscope field of view (photographing range) ma in the observation direction (detection direction) AM1. Similarly, the alignment microscope PMG1 is used as the second detection probe to detect the alignment mark ma within the range of the microscope field of view (photography range) map located in the detection direction PM1. In this way, the alignment microscope AMG1 and the alignment microscope PMG1 detect the specific pattern alignment mark ma on the substrate P shown in FIG. 10 (step S11). The alignment microscope AMG1 outputs the image of the alignment mark ma to the
其次,藉比較記憶部中儲存之顯微鏡視野(攝影範圍)map之對準標記ma之影像資料與顯微鏡視野(攝影範圍)mam之對準標記ma之影像資料,在沒有因基板P之伸縮造成對準標記ma之影像資料之變化時(步驟S12,No),控制裝置14即實施步驟S11之處理。如圖10所示,藉比較記憶部中儲存之顯微鏡視野(攝影範圍)map之對準標記ma之影像資料與顯微鏡視野(攝影範圍)mam之對準標記ma之影像資料,發現有因基板P之伸縮造成對準標記ma之影像資料之變化時(步驟S12,Yes),控制裝置14即進至步驟S13之處理。例如,所謂有因基板P之伸縮造成對準標記ma之影像資料之變化之情形,如圖10所示,係指對準標記ma之影像資料之變化Δm超過為位移調整裝置之像位移修正光學構件45容許之、投影像可在像面内微幅横位移之量的情形。此外,所謂有因基板P之伸縮造成對準標記ma之影像資料之變化之情形,係指對準標記ma之影像資料之變化Δm超過為倍率調整裝置之倍率修正用光學構件47所容許之、可微修正投影像倍率之倍率的情形等。Secondly, by comparing the image data of the alignment mark ma of the microscope field of view (photographing range) map stored in the memory unit with the image data of the alignment mark ma of the microscope field of view (photographic range) mam, there is no interference caused by the expansion and contraction of the substrate P When the image data of the quasi-mark ma is changed (step S12, No), the
其次,控制裝置14視基板P之材料,控制溫度調節裝置60之媒體調節裝置71,以使基板P在寬度方向之目標寬度成為如圖10所示之目標寬度PP,來進行基板P之溫度調整(步驟S13)。控制裝置14根據溫度測量裝置T1、T2之檢測結果,在未達特定之基板溫度時(步驟S14,No),持續進行基板P之溫度調整(步驟S13)。控制裝置14根據溫度測量裝置T1、T2之檢測結果,在達到特定之基板溫度時(步驟S14,Yes),進至步驟S15之處理。Next, the
其次,曝光裝置EX,由上述像位移調整裝置重新根據從上述第1圖案檢測裝置及前述第2圖案檢測裝置之輸出求出之對準標記ma(特定圖案)之變化Δm,進行使投影像位移的投影像修正(步驟S15)。又,曝光裝置EX,亦可由上述倍率調整裝置重新根據從上述第1圖案檢測裝置及前述第2圖案檢測裝置之輸出求出之對準標記ma(特定圖案)之變化Δm,進行修正投影像倍率的投影像修正。或者,曝光裝置EX,亦可由上述倍率調整裝置及像位移調整裝置重新根據從上述第1圖案檢測裝置及前述第2圖案檢測裝置之輸出求出之對準標記ma(特定圖案)之變化Δm,進行修正投影像之位移及倍率的投影像修正。Next, in the exposure device EX, the image displacement adjusting device again shifts the projection image based on the change Δm of the alignment mark ma (specific pattern) obtained from the output of the first pattern detection device and the second pattern detection device. The projected image is corrected (step S15). In addition, in the exposure device EX, the magnification adjustment device may re-correct the projection image magnification based on the change Δm of the alignment mark ma (specific pattern) obtained from the output of the first pattern detection device and the second pattern detection device. Projection image correction. Alternatively, in the exposure device EX, the magnification adjustment device and the image displacement adjustment device may be newly based on the change Δm of the alignment mark ma (specific pattern) obtained from the output of the first pattern detection device and the second pattern detection device, Perform projection image correction to correct the displacement and magnification of the projection image.
如以上之説明,處理裝置U3,可藉由溫度調節裝置60調整捲繞於第2滾筒構件22前之基板P之一部分之溫度,使在上述第1特定位置PX1、特定位置PX或第2特定位置PX2之基板P之伸縮狀態安定。因此,曝光裝置EX可在第1特定位置PX1、特定位置PX或第2特定位置PX2,精密地進行照射曝光用光之處理。As described above, the processing device U3 can adjust the temperature of a part of the substrate P wound around the
藉由溫度調節裝置60調整捲繞於第2滾筒構件22前之基板P之一部分之溫度,可將基板P之伸縮抑制在倍率調整裝置及像位移調整裝置可修正投影像之範圍。因此,曝光裝置EX可在第1特定位置PX1、特定位置PX或第2特定位置PX2,精密地進行照射曝光用光之處理。By adjusting the temperature of a part of the substrate P wound in front of the
進一步的,本實施形態,可藉由控制第2滾筒構件22之外周面(支承面)之溫度之基板支承構件溫度調節裝置73、與設在第2滾筒構件22之上游側之溫度調節裝置60的設置,進行於基板P之搬送方向,在對準位置或曝光位置之特定位置與其上游側之位置之間,使基板P具有一定溫度差之溫度控制。如此,亦能調整在基板P被支承於第2滾筒構件22之時間點之基板P之伸縮量。此場合,設以溫度調節裝置60設定之基板P之溫度為Tu、以基板支承構件溫度調節裝置73透過第2滾筒構件22設定之基板P之溫度為Td的話,設定為Tu>Td、或Tu<Td,以其差大致一定之方式進行溫度控制。Furthermore, in this embodiment, the substrate support member
( 第2實施形態 ) 其次,參照圖12説明本發明之處理裝置之第2實施形態,。圖12係顯示第2實施形態之處理裝置(曝光裝置)之整體構成的示意圖。此圖中,針對與第1實施形態之構成要素相同之要素,係賦予相同符號並省略其説明。(Second Embodiment) Next, a second embodiment of the processing device of the present invention will be described with reference to FIG. 12. Fig. 12 is a schematic diagram showing the overall configuration of the processing apparatus (exposure apparatus) of the second embodiment. In this figure, elements that are the same as the constituent elements of the first embodiment are given the same reference numerals and their description is omitted.
如圖12所示,溫度調節裝置60A,具有從與第2中心軸AX2平行之平行基準軸BX1以一定半徑r3彎曲之曲面(第2曲面)61S,具備基板P之一部分接觸曲面61S之導件32A、以及使經溫度調節之媒體流通於導件32A周圍之空間67之媒體調節裝置71。搬送裝置9使基板P通過導件32A與媒體送風構件62A間之空間67。媒體送風構件62A將從媒體調節裝置71透過媒體供應管線AP供應之媒體送至導件32A側。導件32A,由於從平行基準軸BX1看沿曲面61S彎曲,因此可抑制空間67之亂氣流。As shown in FIG. 12, the
溫度調節裝置60A,藉由使溫度經調節之媒體流通於導件32A周圍之空間67,據以將媒體之溫度傳遞至基板P。導件32A,由於係做成基板P之一部分接觸曲面61S,而能從導件32A直接將基板P供應往第2滾筒構件22,縮短從導件32A至第2滾筒構件22之距離。因此,處理裝置U3可抑制經由溫度調節裝置60A之溫度調整所調整之基板P之伸縮狀態,在從溫度調節裝置60A至第2滾筒構件22之期間產生變化。The
上述導件32A之曲面61S之半徑r3,最好是與第2滾筒構件22之半徑r2相同。藉由此構造,可使作用於捲繞在第2滾筒構件22之基板P之張力、與作用於捲繞在導件32A之基板P之張力相同。其結果,可從對準標記之變化抑制張力差造成之誤差,檢測因溫度造成之對準標記之變化。The radius r3 of the
( 第3實施形態 ) 其次,參照圖13説明本發明之處理裝置之第3實施形態,。圖13係顯示第3實施形態之處理裝置(曝光裝置)之整體構成的示意圖。此圖中,針對與第1實施形態及第2實施形態之構成要素相同之要素,係賦予相同符號並省略其説明。(Third Embodiment) Next, a third embodiment of the processing device of the present invention will be described with reference to FIG. 13. Fig. 13 is a schematic diagram showing the overall configuration of the processing apparatus (exposure apparatus) of the third embodiment. In this figure, elements that are the same as the constituent elements of the first embodiment and the second embodiment are given the same reference numerals and their description is omitted.
如圖13所示,第3實施形態之處理裝置U3,係將媒體調節裝置71作為調節導件32A之導件溫度調節裝置。媒體調節裝置71,可混合高溫媒體與低溫媒體以作為供應至導件32A内部之媒體並使之流通。媒體調節裝置71受控制裝置14控制而調整導件32A之溫度,將導件32A之溫度傳遞至與導件32A接觸之基板P。如此,傳遞至與導件32A之曲面61S接觸之基板P之熱容量,即被大致維持於一定。As shown in FIG. 13, the processing device U3 of the third embodiment uses a
上述導件32A之曲面61S之半徑r3,最好是能與第2滾筒構件22之半徑r2相同。藉由此構造,可使作用於捲繞在第2滾筒構件22之基板P之張力,與作用於捲繞在導件32A之基板P之張力相同。例如,藉由使媒體調節裝置71所施加之傳遞至與導件32A之曲面61S接觸之基板P之熱容量、與傳遞至與第2滾筒構件22之曲面接觸之基板P之熱容量一致,即能提高從對準顯微鏡PMG1檢測之對準標記在對準顯微鏡AMG1之對準標記之變化的預測精度。The radius r3 of the
( 第4實施形態 ) 其次,參照圖14説明本發明之處理裝置之第4實施形態,。圖14係顯示第4實施形態之處理裝置(曝光裝置)之整體構成的示意圖。此圖中,針對與第1實施形態至第3實施形態之構成要素相同之要素,係賦予相同符號並省略其説明。曝光裝置EX2,從光源射出照明圓筒光罩DM之照明光束EL1。(Fourth Embodiment) Next, a fourth embodiment of the processing apparatus of the present invention will be described with reference to FIG. 14. Fig. 14 is a schematic diagram showing the overall configuration of the processing apparatus (exposure apparatus) of the fourth embodiment. In this figure, elements that are the same as the constituent elements of the first embodiment to the third embodiment are given the same reference numerals and their description is omitted. The exposure device EX2 emits an illumination beam EL1 that illuminates the cylindrical mask DM from the light source.
將從光源射出之照明光束EL1導至照明模組IL,設有複數個照明光學系之情形時,將來自光源之照明光束EL1分離成複數條,將複數條照明光束EL1導至複數個照明模組IL。When the illumination light beam EL1 emitted from the light source is guided to the illumination module IL, when a plurality of illumination optical systems are provided, the illumination light beam EL1 from the light source is separated into a plurality of strips, and the plurality of illumination beams EL1 is guided to a plurality of illumination modules Group IL.
此處,從光源射出之照明光束EL1射入偏光分束器SP1、SP2。於偏光分束器SP1、SP2,為抑制因照明光束EL1之分離造成能量損失,以做成可將射入之照明光束EL1完全反射之光束較佳。此處,偏光分束器SP1、SP2係使為S偏光之直線偏光的光束反射、使為P偏光之直線偏光的光束透射。因此,光源係使射入偏光分束器SP1、SP2之照明光束EL1成為直線偏光(S偏光)之光束的照明光束EL1射出至第1滾筒構件21。如此,光源即射出波長及相位一致之照明光束EL1。Here, the illuminating light beam EL1 emitted from the light source enters the polarization beam splitters SP1 and SP2. In the polarization beam splitters SP1 and SP2, in order to suppress the energy loss caused by the separation of the illumination light beam EL1, it is better to make the light beam that can completely reflect the incident illumination light beam EL1. Here, the polarization beam splitters SP1 and SP2 reflect the linearly polarized light beam of S polarization and transmit the linearly polarized light beam of P polarization. Therefore, the light source makes the illumination light beam EL1 incident on the polarizing beam splitters SP1 and SP2 a linearly polarized (S-polarized) light beam and emits it to the
偏光分束器SP1、SP2,在使來自光源之照明光束EL1反射之同時,使被圓筒光罩DM反射之成像光束(投影光束)EL2透射。換言之,來自照明光學模組之照明光束EL1作為反射光束射入偏光分束器SP1、SP2,來自圓筒光罩DM之成像光束EL2則作為透射光束射入偏光分束器SP1、SP2。The polarizing beam splitters SP1 and SP2 reflect the illumination light beam EL1 from the light source and transmit the imaging light beam (projection light beam) EL2 reflected by the cylindrical mask DM. In other words, the illumination light beam EL1 from the illumination optical module enters the polarization beam splitters SP1 and SP2 as a reflected light beam, and the imaging light beam EL2 from the cylindrical mask DM enters the polarization beam splitters SP1 and SP2 as a transmitted light beam.
如前所述,為處理部之照明模組IL,進行使照明光束EL1反射至作為被處理物體之圓筒光罩DM上之既定圖案(光罩圖案)的處理。據此,投影光學系PL即能將在圓筒光罩DM上之照明區域IR中之圖案之像,投影至以搬送裝置9搬送之基板P之一部分(投影區域PA)。曝光裝置EX2,可藉由於圓筒光罩DM反射之投影光束,進行對在第1特定位置PX1、第2特定位置PX2之基板P照射曝光用光的處理。As described above, the illumination module IL, which is the processing unit, performs processing to reflect the illumination light beam EL1 to the predetermined pattern (mask pattern) on the cylindrical mask DM as the object to be processed. According to this, the projection optical system PL can project the image of the pattern in the illumination area IR on the cylindrical mask DM to a part of the substrate P (projection area PA) conveyed by the conveying
( 第5實施形態 ) 其次,參照圖15説明本發明之處理裝置之第5實施形態,。圖15係顯示第5實施形態之處理裝置(曝光裝置)之整體構成的示意圖。此圖中,針對與第1實施形態至第4實施形態之構成要素相同之要素,係賦予相同符號並省略其説明。曝光裝置EX3具備複數個多邊形掃描單元PO1、PO2,各多邊形掃描單元PO一邊將來自紫外線雷射光源之光束點以高速掃描於基板P上與軸旋轉中心AX2平行之方向、一邊以未圖示之AOM(Acousto-Optic Modulator:聲光調變元件)等依據圖案描繪資料(CAD資料)進行光束之調變(On/Off),據以將圖案描繪於基板P上。(Fifth Embodiment) Next, a fifth embodiment of the processing apparatus of the present invention will be described with reference to FIG. 15. Fig. 15 is a schematic diagram showing the overall configuration of the processing apparatus (exposure apparatus) of the fifth embodiment. In this figure, elements that are the same as the constituent elements of the first embodiment to the fourth embodiment are given the same reference numerals and their description is omitted. The exposure device EX3 is equipped with a plurality of polygonal scanning units PO1 and PO2. Each polygonal scanning unit PO scans the beam spot from the ultraviolet laser light source on the substrate P at a high speed in a direction parallel to the axis rotation center AX2, and one side is not shown. AOM (Acousto-Optic "Modulator: Acousto-Optic Modulator) etc. perform the modulation (On/Off) of the light beam according to the pattern drawing data (CAD data), and the pattern is drawn on the substrate P accordingly.
曝光裝置EX3,係沒有圓筒光罩DM亦能對在第1特定位置PX1、第2特定位置PX2之基板P照射曝光用光(雷射點)以形成既定圖案之無光罩曝光裝置,除點掃描以外,亦可以是使用DMD(Digital Micro mirror Device)或SLM(Spatial light modulator:空間光調變器)描繪圖案之方式。The exposure device EX3 is a maskless exposure device that can irradiate the substrate P at the first specific position PX1 and the second specific position PX2 with exposure light (laser spot) to form a predetermined pattern without the cylindrical mask DM, except In addition to point scanning, it is also possible to use DMD (Digital Micro mirror Device) or SLM (Spatial light modulator) to draw patterns.
(第6實施形態) 其次,參照圖16説明本發明之處理裝置之第6實施形態。圖16係顯示第6實施形態之處理裝置(曝光裝置)之整體構成的示意圖。此圖中,針對與第1實施形態之構成要素相同之要素係賦予相同符號並省略其説明。(The sixth embodiment) Next, a sixth embodiment of the processing device of the present invention will be described with reference to FIG. 16. Fig. 16 is a schematic diagram showing the overall configuration of the processing apparatus (exposure apparatus) of the sixth embodiment. In this figure, elements that are the same as the constituent elements of the first embodiment are given the same reference numerals and their description is omitted.
曝光裝置EX4,係所謂之對基板P施以近接曝光之處理裝置。曝光裝置EX4,將圓筒光罩DM與第2滾筒構件22之間設定為極微小之間隙,照明機構IU直接對基板P照射照明光束EL以進行非接觸曝光。本實施形態中,第2滾筒構件22係藉由包含電動馬達等致動器之第2驅動部36所供應之扭矩而旋轉。以和第2驅動部36之旋轉方向相反之方式,由例如以磁齒輪連結之驅動輥MGG驅動第1滾筒構件21。第2驅動部36旋轉第2滾筒構件22,並將驅動輥MGG與第1滾筒構件21加以連結,使第1滾筒構件21(圓筒光罩DM)與第2滾筒構件22同步移動(同步旋轉)。The exposure device EX4 is a so-called processing device that applies proximity exposure to the substrate P. The exposure device EX4 sets a very small gap between the cylindrical mask DM and the
又,曝光裝置EX4,具備檢測相對基板P照明光束(成像光束)EL之主光線射入基板P之特定位置之標尺部GP之位置PX6的編碼器讀頭EN6。此處,由於有使第2滾筒構件22之外周面中捲繞基板P之外周面之直徑與標尺圓盤SD之標尺部GP之直徑一致,因此,從第2中心軸AX2看,位置PX6與上述特定位置一致。此外,編碼器讀頭EN7係設定在朝向基板P搬送方向之後方側將編碼器讀頭EN6之設置方位線Le6繞旋轉中心線AX2旋轉大致90°之設置方位線Le7上。In addition, the exposure device EX4 is equipped with an encoder head EN6 that detects the position PX6 of the scale portion GP at a specific position on the substrate P that the principal ray of the illumination beam (imaging beam) EL against the substrate P enters. Here, since the diameter of the outer peripheral surface of the wound substrate P in the outer peripheral surface of the
本實施形態之曝光裝置EX4,以編碼器讀頭EN7為第1讀取裝置、以編碼器讀頭EN6為第2讀取裝置,而將從標尺部GP之讀取輸出求出之第2滾筒構件22之軸之位置與特定位置加以連結、且對與軸正交之方向之變位成分,施以以第1讀取裝置之讀取輸出加以修正之處理。The exposure apparatus EX4 of this embodiment uses the encoder head EN7 as the first reader, the encoder head EN6 as the second reader, and the second roller obtained from the reading output of the scale part GP The position of the shaft of the
以上之第1至第6實施形態中,作為處理裝置係以曝光裝置為例做了說明。但作為處理裝置並不限於曝光裝置,但亦可以是處理部為以噴墨之墨滴下裝置將圖案印刷至被處理物體基板P之裝置。此外,處理部亦可以是檢査裝置。 < 元件製造方法 >In the first to sixth embodiments described above, the exposure device is used as an example of the processing device. However, the processing device is not limited to the exposure device, but the processing unit may be a device in which the pattern is printed on the substrate P of the object to be processed by an ink-jet ink drop device. In addition, the processing unit may also be an inspection device. <Component manufacturing method >
其次,參照圖17說明元件製造方法。圖17係顯示使用第1實施形態之處理裝置(曝光裝置)之元件製造方法的流程圖。Next, the device manufacturing method will be described with reference to FIG. 17. Fig. 17 is a flowchart showing a device manufacturing method using the processing device (exposure device) of the first embodiment.
圖17所示之元件製造方法,首先,係進行例如使用有機EL等自發光元件之顯示面板之功能、性能設計,以CAD等設計所需之電路圖案及配線圖案(步驟S201)。接著,根據以CAD等設計之各種的每一層圖案,製作所需層量之圓筒光罩DM(步驟S202)。並準備捲繞有作為顯示面板之基材之可撓性基板P(樹脂薄膜、金屬箔膜、塑膠等)的供應用捲筒FR1(步驟S203)。又,於此步驟S203中準備之捲筒狀基板P,可以是視需要將其表面改質者、或事前已形成底層(例如透過印記(imprint)方式之微小凹凸)者、或預先積層有光感應性之功能膜或透明膜(絶緣材料)者。In the device manufacturing method shown in FIG. 17, first, the function and performance design of a display panel using a self-luminous device such as organic EL is performed, and the required circuit patterns and wiring patterns are designed by CAD or the like (step S201). Next, according to the various patterns of each layer designed by CAD or the like, a cylindrical mask DM of the required layer amount is produced (step S202). The supply roll FR1 on which the flexible substrate P (resin film, metal foil film, plastic, etc.) as the base material of the display panel is wound is prepared (step S203). In addition, the roll-shaped substrate P prepared in this step S203 may be one whose surface has been modified as necessary, or one that has been formed in advance (for example, micro-concave and convex through imprint method), or one that has been pre-laminated with light. Inductive functional film or transparent film (insulating material).
接著,於基板P上形成由構成顯示面板之電極及配線、絶緣膜、TFT(薄膜半導體)等構成之底板(backplane)層,並以積層於該底板層之方式形成由有機EL等自發光元件構成之發光層(顯示像素部)(步驟S204)。於此步驟S204中,亦包使用先前之各實施形態中説明之曝光裝置EX、EX2、EX3、EX4來使光阻層曝光之習知微影製程,但亦包含取代光阻而將塗有感光性矽烷耦合劑之基板P予以圖案曝光來於表面形成親撥水性之圖案的曝光製程、使光感應性之觸媒層圖案曝光後以無電電鍍法形成金屬膜之圖案(配線、電極等)的濕式製程、或以含有銀奈米粒子之導電性墨水等描繪圖案的印刷製程、等之處理。Next, a backplane layer composed of electrodes and wirings, insulating films, TFT (thin film semiconductor), etc. constituting the display panel is formed on the substrate P, and a self-luminous element such as organic EL is formed by stacking on the backplane layer. The constituted light emitting layer (display pixel portion) (step S204). In this step S204, it also includes the conventional lithography process of exposing the photoresist layer using the exposure devices EX, EX2, EX3, and EX4 described in the previous embodiments, but also includes replacing the photoresist and applying the photoresist. Pattern exposure of the substrate P of the siloxane coupling agent to form a water-repellent pattern on the surface. The pattern of the metal film (wiring, electrode, etc.) is formed by electroless plating after exposing the photo-sensitive catalyst layer pattern. Wet process, or printing process that draws patterns with conductive ink containing silver nanoparticles, etc.
其次,就以捲筒方式於長條狀基板P上連續製造之每一顯示面板元件切割基板P、或於各顯示面板元件之表面貼合保護薄膜(對環境障壁層)及彩色濾光片等,以組裝元件(步驟S205)。接著,進行顯示面板元件是否可正常運作、或是否滿足所欲性能及特性等的檢査步驟(步驟S206)。採上述方式,即能製造顯示面板(可撓性顯示器)。Secondly, cut the substrate P for each display panel element continuously manufactured on the long substrate P in a roll manner, or attach a protective film (barrier layer to the environment) and color filters on the surface of each display panel element. , To assemble components (step S205). Then, a step of checking whether the display panel device can operate normally, or whether it meets the desired performance and characteristics, etc. is performed (step S206). In the above manner, a display panel (flexible display) can be manufactured.
1:元件製造系統 2:基板供應裝置 3:基板回收裝置 5:上位控制裝置 9:搬送裝置 12:光罩保持裝置 13:光源裝置 14:控制裝置 21:第1滾筒構件 22:第2滾筒構件 23:導輥 24:驅動輥 25:第1檢測器 26:第1驅動部 31:第1導件 32:第2導件 33:第3導件 35:第2檢測器 36:第2驅動部 44:焦點修正光學構件 45:像位移修正光學構件 46:旋轉修正機構 47:倍率修正用光學構件 60、60A:溫度調節裝置 61、32A:導件 61S:曲面 62、62A:媒體送風構件 63:送風壓力均勻化構件 64、65:限制構件 66:音圈馬達 67:空間 71:媒體調節裝置 72H、72C、74H、74C:流量調整閥 73:基板支承構件溫度調節裝置 AD:媒體供應管線 AM1、AM2:觀察方向 AMG1、AMG2、PMG1:對準顯微鏡 AP:媒體供應管線 AX1、AX2:旋轉中心線 CC:媒體供應管線 CU:冷卻單元 DM:圓筒光罩 DR1~DR8:驅動輥 HH:媒體供應管線 EL1:照明光束 EL2:成像光束 EN1、EN2、EN3、EN4、EN5:編碼器讀頭 EX、EX2、EX3、EX4:曝光裝置(基板處理裝置) HH:媒體供應管線 HU:加熱單元 IA:搬送方向進入位置 IL:照明模組 IR:照明區域 IU:照明機構 OA:搬送方向脫離位置 P:基板 P1:第1面 P2:第2面 P2:中心面 PA(PA1~PA6):投影區域 PL(PL1~PL6):投影光學系 PM1:檢測方向 PO1、PO2:多邊形掃描單元 PX:特定位置 PX1、PX2:第1、第2特定位置 T1、T2:溫度測量裝置1: Component manufacturing system 2: Substrate supply device 3: Substrate recovery device 5: Upper control device 9: Conveying device 12: Mask holding device 13: Light source device 14: Control device 21: The first roller member 22: The second roller member 23: Guide roller 24: drive roller 25: The first detector 26: The first drive part 31: The first guide 32: The second guide 33: 3rd guide 35: The second detector 36: 2nd drive part 44: Focus correction optics 45: Image displacement correction optical component 46: Rotation correction mechanism 47: Optical components for magnification correction 60, 60A: temperature adjustment device 61, 32A: guide 61S: curved surface 62, 62A: Media air supply components 63: Air pressure equalization component 64, 65: Restriction member 66: Voice coil motor 67: Space 71: media conditioning device 72H, 72C, 74H, 74C: flow adjustment valve 73: substrate support member temperature adjustment device AD: media supply pipeline AM1, AM2: viewing direction AMG1, AMG2, PMG1: Align the microscope AP: Media supply pipeline AX1, AX2: Rotation center line CC: media supply pipeline CU: cooling unit DM: Cylindrical mask DR1~DR8: drive roller HH: Media supply pipeline EL1: Illumination beam EL2: imaging beam EN1, EN2, EN3, EN4, EN5: Encoder reading head EX, EX2, EX3, EX4: Exposure device (substrate processing device) HH: Media supply pipeline HU: Heating unit IA: Conveying direction entry position IL: lighting module IR: illuminated area IU: lighting agency OA: The conveying direction is out of position P: substrate P1: Side 1 P2: Side 2 P2: Center plane PA (PA1~PA6): projection area PL (PL1~PL6): Projection optics PM1: Detection direction PO1, PO2: polygon scanning unit PX: specific location PX1, PX2: the first and second specific positions T1, T2: temperature measuring device
[圖1]係顯示第1實施形態之元件製造系統之構成的圖。 [圖2]係顯示第1實施形態之處理裝置(曝光裝置)之全體構成的示意圖。 [圖3]係顯示圖2中之照明區域及投影區域之配置的示意圖。 [圖4]係顯示適用於圖2之處理裝置(曝光裝置)之投影光學系之構成的示意圖。 [圖5]係適用於圖2之處理裝置(曝光裝置)之旋轉筒的立體圖。 [圖6]係用以說明適用於圖2之處理裝置(曝光裝置)之檢測探針與讀取裝置間之關係的立體圖。 [圖7]係從旋轉中心線方向觀察第1實施形態之標尺圓盤,用以說明讀取裝置之位置的説明圖。 [圖8]係說明第1實施形態之溫度調節裝置的説明圖。 [圖9]係說明對準標記之一例的説明圖。 [圖10]係以示意方式說明因基板伸縮造成之對準標記之一變化例的説明圖。 [圖11]係顯示修正第1實施形態之處理裝置(曝光裝置)之處理之一程序例的流程圖。 [圖12]係顯示第2實施形態之處理裝置(曝光裝置)之全體構成的示意圖。 [圖13]係顯示第3實施形態之處理裝置(曝光裝置)之全體構成的示意圖。 [圖14]係顯示第4實施形態之處理裝置(曝光裝置)之全體構成的示意圖。 [圖15]係顯示第5實施形態之處理裝置(曝光裝置)之全體構成的示意圖。 [圖16]係顯示第6實施形態之處理裝置(曝光裝置)之全體構成的示意圖。 [圖17]係顯示使用第1實施形態之處理裝置(曝光裝置)之元件製造方法的流程圖。[Fig. 1] A diagram showing the structure of the device manufacturing system of the first embodiment. Fig. 2 is a schematic diagram showing the overall configuration of the processing apparatus (exposure apparatus) of the first embodiment. [Fig. 3] is a schematic diagram showing the arrangement of the illumination area and projection area in Fig. 2. [FIG. 4] A schematic diagram showing the configuration of a projection optical system suitable for the processing device (exposure device) of FIG. 2. [FIG. 5] A perspective view of a rotating drum suitable for the processing device (exposure device) of FIG. 2. [FIG. 6] A perspective view for explaining the relationship between the detection probe and the reading device suitable for the processing device (exposure device) of FIG. 2. [Fig. 7] An explanatory diagram of the scale disk of the first embodiment viewed from the direction of the rotation center line to describe the position of the reading device. [Fig. 8] is an explanatory diagram for explaining the temperature adjustment device of the first embodiment. [FIG. 9] An explanatory diagram explaining an example of the alignment mark. [Fig. 10] is an explanatory diagram schematically illustrating a modification example of the alignment mark caused by the expansion and contraction of the substrate. Fig. 11 is a flowchart showing an example of a procedure for correcting the processing of the processing device (exposure device) of the first embodiment. Fig. 12 is a schematic diagram showing the overall configuration of the processing apparatus (exposure apparatus) of the second embodiment. Fig. 13 is a schematic diagram showing the overall configuration of the processing apparatus (exposure apparatus) of the third embodiment. Fig. 14 is a schematic diagram showing the overall configuration of the processing apparatus (exposure apparatus) of the fourth embodiment. Fig. 15 is a schematic diagram showing the overall configuration of the processing device (exposure device) of the fifth embodiment. Fig. 16 is a schematic diagram showing the overall configuration of the processing apparatus (exposure apparatus) of the sixth embodiment. [FIG. 17] A flowchart showing a device manufacturing method using the processing device (exposure device) of the first embodiment.
9:搬送裝置 9: Conveying device
12:光罩保持裝置 12: Mask holding device
13:光源裝置 13: Light source device
14:控制裝置 14: Control device
21:第1滾筒構件 21: The first roller member
22:第2滾筒構件 22: The second roller member
23:導輥 23: Guide roller
24:驅動輥 24: drive roller
25:第1檢測器 25: The first detector
26:第1驅動部 26: The first drive part
31:第1導件 31: The first guide
32:第2導件 32: The second guide
33:第3導件 33: 3rd guide
35:第2檢測器 35: The second detector
36:第2驅動部 36: 2nd drive part
60:溫度調節裝置 60: Temperature adjustment device
61:導件 61: guide
62:媒體送風構件 62: Media air supply component
63:送風壓力均勻化構件 63: Air pressure equalization component
67:空間 67: Space
71:媒體調節裝置 71: media conditioning device
72H、72C、74H、74C:流量調整閥 72H, 72C, 74H, 74C: flow adjustment valve
73:基板支承構件溫度調節裝置 73: substrate support member temperature adjustment device
AD:媒體供應管線 AD: media supply pipeline
AM1、AM2:觀察方向 AM1, AM2: viewing direction
AMG1、AMG2、PMG1:對準顯微鏡 AMG1, AMG2, PMG1: Align the microscope
AP:媒體供應管線 AP: Media supply pipeline
AX1、AX2:旋轉中心線 AX1, AX2: Rotation center line
CC:媒體供應管線 CC: media supply pipeline
CU:冷卻單元 CU: cooling unit
DM:圓筒光罩 DM: Cylindrical mask
DR6、DR4:驅動輥 DR6, DR4: drive roller
EL1:照明光束 EL1: Illumination beam
EL2:成像光束 EL2: imaging beam
EX:曝光裝置(基板處理裝置) EX: Exposure device (substrate processing device)
HH:媒體供應管線 HH: Media supply pipeline
HU:加熱單元 HU: Heating unit
IA:搬送方向進入位置 IA: Conveying direction entry position
IL:照明模組 IL: lighting module
IR:照明區域 IR: illuminated area
IU:照明機構 IU: lighting agency
OA:搬送方向脫離位置 OA: The conveying direction is out of position
P:基板 P: substrate
P1:第1面
P1:
P2:第2面
P2:
P2:中心面 P2: Center plane
PA(PA1~PA6):投影區域 PA (PA1~PA6): projection area
PL(PL1~PL6):投影光學系 PL (PL1~PL6): Projection optics
PM1:檢測方向 PM1: Detection direction
PX:特定位置 PX: specific location
PX1、PX2:第1、第2特定位置 PX1, PX2: the first and second specific positions
T1、T2:溫度測量裝置 T1, T2: temperature measuring device
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TWI692677B (en) | 2020-05-01 |
JP6540774B2 (en) | 2019-07-10 |
KR101861904B1 (en) | 2018-05-28 |
JP2018045248A (en) | 2018-03-22 |
JP6690697B2 (en) | 2020-04-28 |
KR20180112881A (en) | 2018-10-12 |
CN104620178B (en) | 2016-10-26 |
CN106933065B (en) | 2019-03-05 |
KR101973349B1 (en) | 2019-04-26 |
TWI724850B (en) | 2021-04-11 |
JP2019152885A (en) | 2019-09-12 |
TWI645262B (en) | 2018-12-21 |
WO2014041941A1 (en) | 2014-03-20 |
JP2019061279A (en) | 2019-04-18 |
TW201411298A (en) | 2014-03-16 |
JP6780742B2 (en) | 2020-11-04 |
KR20180079476A (en) | 2018-07-10 |
TW201908876A (en) | 2019-03-01 |
CN104620178A (en) | 2015-05-13 |
KR101923360B1 (en) | 2018-11-28 |
TW201809906A (en) | 2018-03-16 |
TWI606306B (en) | 2017-11-21 |
HK1207162A1 (en) | 2016-01-22 |
KR101908269B1 (en) | 2018-10-15 |
KR20180127548A (en) | 2018-11-28 |
CN106933065A (en) | 2017-07-07 |
KR20180033595A (en) | 2018-04-03 |
KR20150056547A (en) | 2015-05-26 |
KR101890099B1 (en) | 2018-08-20 |
JPWO2014041941A1 (en) | 2016-08-18 |
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