JP4669760B2 - Substrate processing apparatus and processing method - Google Patents

Substrate processing apparatus and processing method Download PDF

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JP4669760B2
JP4669760B2 JP2005247901A JP2005247901A JP4669760B2 JP 4669760 B2 JP4669760 B2 JP 4669760B2 JP 2005247901 A JP2005247901 A JP 2005247901A JP 2005247901 A JP2005247901 A JP 2005247901A JP 4669760 B2 JP4669760 B2 JP 4669760B2
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substrate
processing
back surface
liquid
supplied
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JP2006110541A (en
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慎介 植木
幸伸 西部
明典 磯
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Shibaura Mechatronics Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B05C11/1002—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves
    • B05C11/1026—Valves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Weting (AREA)

Description

この発明は基板の表面を所定の温度で加熱された処理液によって処理する基板の処理装置及び処理方法に関する。   The present invention relates to a substrate processing apparatus and a processing method for processing a surface of a substrate with a processing liquid heated at a predetermined temperature.

液晶表示装置に用いられるガラス製の基板には回路パターンが形成される。基板に回路パターンを形成するにはリソグラフィープロセスが採用される。リソグラフィープロセスは周知のように上記基板にレジストを塗布し、このレジストに回路パターンが形成されたマスクを介して光を照射する。   A circuit pattern is formed on a glass substrate used in the liquid crystal display device. A lithographic process is employed to form a circuit pattern on the substrate. In a lithography process, as is well known, a resist is applied to the substrate, and light is irradiated through a mask having a circuit pattern formed on the resist.

つぎに、レジストの光が照射されない部分或いは光が照射された部分を除去し、基板のレジストが除去された部分をエッチングし、エッチング後にレジストを除去するなどの一連の工程を複数回繰り返すことで、上記基板に回路パターンを形成する。   Next, by repeating a series of steps such as removing a portion of the resist not irradiated with light or a portion irradiated with light, etching the portion of the substrate where the resist is removed, and removing the resist after etching, a plurality of times. Then, a circuit pattern is formed on the substrate.

このようなリソグラフィープロセスにおいては、上記基板に現像液、エッチング液或いはエッチング後にレジストを除去する剥離液などによって基板を処理する工程、さらに洗浄液によって洗浄する工程があり、洗浄後には基板に付着残留した洗浄液を除去する乾燥工程が必要となる。   In such a lithography process, there are a step of treating the substrate with a developer, an etching solution or a stripping solution for removing the resist after etching, and a step of washing with a cleaning solution. After washing, the substrate remains adhered to the substrate. A drying process for removing the cleaning liquid is required.

従来、基板に対して上述した一連の処理を行う場合、上記基板は軸線を水平にして配置された搬送ローラによって水平な状態でそれぞれの処理チャンバに順次搬送し、各チャンバで上述したそれぞれの処理を行うようにしている。   Conventionally, when the above-described series of processing is performed on a substrate, the substrate is sequentially transported to each processing chamber in a horizontal state by transport rollers arranged with the axis line horizontal, and each processing described above is performed in each chamber. Like to do.

ところで、最近では液晶表示装置に用いられるガラス製の基板が大型化及び薄型化する傾向にある。そのため、基板を水平搬送すると、搬送ローラ間における基板の撓みが大きくなるため、各処理チャンバでの処理が基板の板面全体にわたって均一に行えなくなるということが生じる。   Recently, glass substrates used in liquid crystal display devices tend to be larger and thinner. For this reason, when the substrate is horizontally transported, the bending of the substrate between the transport rollers becomes large, so that processing in each processing chamber cannot be performed uniformly over the entire plate surface of the substrate.

しかも、基板が大型化すると、その基板を搬送する搬送ローラが設けられた搬送軸が長尺化するとともに、基板上に供給される処理液が増大し、基板上の処理液の量に応じて上記搬送軸に加わる荷重が大きくなるから、搬送軸の撓みが増大する。そのため、基板は単に自重によって撓むだけでなく、搬送軸とともに撓むから、そのことによっても均一な処理が行えなくなるということがある。
そこで、最近では基板の撓みを少なくするために、基板を所定の角度で傾斜させて搬送しながら、処理するということが実用化されつつある。 In addition, when the substrate is enlarged, the transport shaft provided with the transport roller for transporting the substrate becomes longer and the amount of processing liquid supplied onto the substrate increases, depending on the amount of processing liquid on the substrate. Since the load applied to the transport shaft is increased, the deflection of the transport shaft is increased. For this reason, the substrate is not only bent by its own weight but also bent together with the transport shaft, which may prevent uniform processing.
Therefore, recently, in order to reduce the bending of the substrate, it has been put into practical use that the substrate is processed while being inclined at a predetermined angle.

ところで、基板を処理液としての剥離液で処理する場合、レジストの剥離効果を高めるために、剥離液を７０〜８０度に加熱して供給するということが行われている。基板を水平に搬送する場合には、基板の回路パターンが形成される表面（上面）に供給された剥離液はその表面に滞留するため、基板の温度が剥離液の温度とほぼ同じ温度に維持される。それによって、レジストの剥離を効率よく行うことが可能となる。   By the way, when processing a board | substrate with the peeling liquid as a processing liquid, in order to improve the peeling effect of a resist, heating and supplying a peeling liquid at 70-80 degree | times is performed. When the substrate is transported horizontally, the stripping solution supplied to the surface (upper surface) on which the circuit pattern of the substrate is formed stays on the surface, so that the substrate temperature is maintained at substantially the same temperature as the stripping solution. Is done. As a result, the resist can be efficiently peeled off.

ところで、上述したように基板を所定の角度で傾斜させて搬送する場合、傾斜方向の上側となる表面に所定温度に加熱された剥離液を供給しても、その剥離液は基板の表面の上端から下端に沿って速い速度で流れ落ちてしまう。しかも、基板のたわみを少なくするために、傾斜角度を大きくすればする程、剥離液は基板の表面から短時間で流れ落ちてしまう。   By the way, as described above, when the substrate is transported at a predetermined angle, even if the stripping solution heated to a predetermined temperature is supplied to the upper surface in the tilting direction, the stripping solution remains at the upper end of the surface of the substrate. Will flow down at a high speed along the bottom edge. Moreover, as the tilt angle is increased in order to reduce the deflection of the substrate, the stripping solution flows down from the surface of the substrate in a shorter time.

このように、剥離液が基板の表面から早い速度で流れ落ちてしまうと、基板は剥離液によって温度上昇し難くなる。そのため、剥離液によるレジストの除去を効率よく確実に行うことができないということが生じる。   As described above, when the stripping liquid flows down from the surface of the substrate at a high speed, the temperature of the substrate is hardly increased by the stripping liquid. For this reason, the resist cannot be efficiently and reliably removed with the stripping solution.

そこで、基板の表面の上下方向に沿って複数のノズル体を所定間隔で配置し、各ノズル体から処理液を供給することで、基板を上下方向に沿って温度上昇させることができるようにすることが考えられている。   Therefore, by arranging a plurality of nozzle bodies at predetermined intervals along the vertical direction of the surface of the substrate and supplying the processing liquid from each nozzle body, the temperature of the substrate can be raised along the vertical direction. It is considered.

しかしながら、基板の表面に上下方向に沿って配置された複数のノズル体から処理液を供給すると、各ノズル体から供給された処理液は基板の表面の下部に行くにつれて流量が多くなる。そのため、基板は上部よりも下部の方が温度上昇し、上下方向が均一な温度で加熱されなくなるから、その温度差に応じて処理液による処理も不均一になるということがあった。   However, when processing liquid is supplied from a plurality of nozzle bodies arranged along the vertical direction on the surface of the substrate, the flow rate of the processing liquid supplied from each nozzle body increases toward the lower part of the surface of the substrate. For this reason, the temperature of the substrate is lower at the lower part than at the upper part, and the substrate is not heated at a uniform temperature in the vertical direction, so that the treatment with the treatment liquid becomes non-uniform depending on the temperature difference.

この発明は、基板を傾斜させて搬送する場合に、この基板を処理液によって上下方向に温度差が生じることなく均一に加熱して処理することができるようにした基板の処理装置及び処理方法を提供することにある。   The present invention relates to a substrate processing apparatus and a processing method in which when a substrate is conveyed while being inclined, the substrate can be heated and processed uniformly without causing a temperature difference in the vertical direction by a processing liquid. It is to provide.

この発明は、搬送される基板の表面を所定温度に加熱された処理液によって処理する基板の処理装置であって、
上記基板を上記表面が傾斜方向上側となるよう所定の角度で傾斜させて搬送する搬送手段と、
この搬送手段によって搬送される基板の傾斜方向上側となる上記表面に上記処理液を供給する第１の給液手段と、
上記搬送手段によって搬送される基板の搬送方向の上記第１の給液手段よりも上流側に配置され上記基板の傾斜方向下側となる裏面の上部に所定温度に加熱された処理液を供給する第２の給液手段と、
上記搬送手段によって搬送される基板の裏面側に設けられ上記第２の給液手段によって基板の裏面の上部に供給された処理液を基板の裏面に沿って流れるようガイドするガイド部材と
を具備したことを特徴とする基板の処理装置にある。 The present invention is a substrate processing apparatus for processing a surface of a substrate to be transported with a processing liquid heated to a predetermined temperature,
Transport means for transporting the substrate at a predetermined angle so that the surface is on the upper side in the tilt direction;
First liquid supply means for supplying the treatment liquid to the surface on the upper side in the inclination direction of the substrate conveyed by the conveyance means;
A processing liquid heated to a predetermined temperature is supplied to the upper part of the back surface, which is arranged on the upstream side of the first liquid supply means in the transport direction of the substrate transported by the transport means and is below the tilt direction of the substrate. A second liquid supply means;
A guide member that is provided on the back side of the substrate transported by the transport means and guides the processing liquid supplied to the upper part of the back surface of the substrate by the second liquid supply means so as to flow along the back surface of the substrate . The substrate processing apparatus is characterized by the above.

この発明は、搬送される基板の表面を所定温度に加熱された処理液によって処理する基板の処理方法であって、
上記基板を上記表面が傾斜方向上側となるよう所定の角度で傾斜させて搬送する工程と、
搬送される基板の傾斜方向上側となる上記表面に所定温度に加熱された処理液を供給する工程と、
搬送される基板の上記表面に所定温度に加熱された処理液を供給する前に、傾斜方向下側となる裏面の上部に所定温度に加熱された処理液を供給する工程と、
上記基板の裏面の上部に供給された処理液を、この基板の裏面に沿って流れるようガイドする工程と
を具備したことを特徴とする基板の処理方法にある。 The present invention is a substrate processing method for processing a surface of a substrate to be transported with a processing liquid heated to a predetermined temperature,
Transporting the substrate inclined at a predetermined angle so that the surface is on the upper side in the inclination direction;
Supplying a treatment liquid heated to a predetermined temperature to the surface on the upper side in the inclination direction of the substrate to be conveyed;
Before supplying the processing liquid heated to a predetermined temperature to the front surface of the substrate to be transported , supplying the processing liquid heated to a predetermined temperature to the upper part of the back surface on the lower side in the inclined direction;
And a step of guiding the processing liquid supplied to the upper part of the back surface of the substrate so as to flow along the back surface of the substrate.

この発明によれば、基板の表面だけでなく、裏面の上部にも処理液を供給するようにしたから、基板の表面を流れる処理液の流量が上部よりも下部の方が多くなっても、裏面の上部に供給された処理液によって、基板を上下方向にほぼ均一な温度に加熱することが可能となる。   According to this invention, since the processing liquid is supplied not only to the surface of the substrate but also to the upper part of the back surface, even if the flow rate of the processing liquid flowing on the surface of the substrate is higher in the lower part than in the upper part, The substrate can be heated to a substantially uniform temperature in the vertical direction by the processing liquid supplied to the upper part of the back surface.

以下、この発明の実施の形態を図面を参照して説明する。
図１乃至図３はこの発明の第１の実施の形態を示し、図１は搬送手段１によって所定の角度、たとえば７５度の角度で傾斜して搬送される基板Ｗを示す斜視図である。上記搬送手段１は軸線を水平面に対して１５度の角度で傾斜させて配置された複数の駆動ローラ２を有する。駆動ローラ２は、図２に示すように駆動源３によって回転駆動される第１の取り付け軸４に取り付けられている。 Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 to FIG. 3 show a first embodiment of the present invention. FIG. 1 is a perspective view showing a substrate W which is transported by a transport means 1 at a predetermined angle, for example, an angle of 75 degrees. The conveying means 1 has a plurality of driving rollers 2 arranged with its axis inclined at an angle of 15 degrees with respect to a horizontal plane. The drive roller 2 is attached to a first attachment shaft 4 that is rotationally driven by a drive source 3 as shown in FIG.

上記基板Ｗの傾斜方向下側となる裏面側には、軸線を搬送される基板Ｗと平行、つまり７５度の角度で傾斜させて配置された複数の第２の取り付け軸５が基板Ｗの搬送方向に沿って所定間隔で、しかも上下端部をそれぞれ軸受６によって回転可能に支持されて設けられている。各第２の取り付け軸５にはそれぞれ軸方向に所定間隔で複数、この実施の形態では３つの支持ローラ７が上記第２の取り付け軸５に対して回転可能に設けられている。   A plurality of second attachment shafts 5 arranged with the axis parallel to the substrate W to be transported, that is, inclined at an angle of 75 degrees, are transported on the back side, which is the lower side in the tilt direction of the substrate W. The upper and lower ends are rotatably supported by bearings 6 at predetermined intervals along the direction. Each of the second mounting shafts 5 is provided with a plurality of support rollers 7 at predetermined intervals in the axial direction, and in this embodiment, three support rollers 7 are rotatable with respect to the second mounting shaft 5.

上記基板Ｗは下端が上記駆動ローラ２の外周面に支持され、裏面が上記支持ローラ７によって支持される。つまり、基板Ｗは回路パターンが形成された表面を傾斜方向の上側にして所定の傾斜角度で傾斜して支持される。そして、上記駆動ローラ２を駆動源３によって回転駆動すれば、上記基板Ｗは支持ローラ７に支持されながら図１に矢印で示す駆動ローラ２の回転方向に搬送駆動されるようになっている。 The lower end of the substrate W is supported by the outer peripheral surface of the drive roller 2, and the back surface is supported by the support roller 7 . In other words, the substrate W is supported by being inclined at a predetermined inclination angle with the surface on which the circuit pattern is formed on the upper side in the inclination direction. When the driving roller 2 is rotationally driven by the driving source 3, the substrate W is conveyed and driven in the rotational direction of the driving roller 2 indicated by an arrow in FIG.

上記搬送手段１によって搬送される基板Ｗの搬送路には、この基板Ｗの傾斜方向下側である裏面側に、一側面を基板Ｗの裏面と数ｍｍ、たとえば５ｍｍの間隔で平行に対向させて板状のガイド部材１１が設けられている。   In the transport path of the substrate W transported by the transport means 1, one side surface is opposed to the back surface side, which is the lower side in the inclination direction of the substrate W, in parallel with the back surface of the substrate W at intervals of several mm, for example, 5 mm. A plate-shaped guide member 11 is provided.

上記ガイド部材１１は、耐薬品性を備えているとともに熱伝導率の低い（保温性の高い材料）材料、たとえば合成樹脂などによって上記基板Ｗよりも大きな矩形板状に形成されている。   The guide member 11 is formed in a rectangular plate shape larger than the substrate W by a material having chemical resistance and a low thermal conductivity (a material having high heat retention), such as a synthetic resin.

上記ガイド部材１１には、図２と図３に示すように上記支持ローラ７と対応する箇所に、支持ローラ７が径方向の一部をガイド部材１１の裏面から基板Ｗ側に突出させる開口部１２が形成されている。それによって、基板Ｗは、ガイド部材１１の開口部１２から一部を突出させた支持ローラ７によって裏面が走行可能に支持される。   As shown in FIGS. 2 and 3, the guide member 11 has an opening at a position corresponding to the support roller 7 so that the support roller 7 projects a part in the radial direction from the back surface of the guide member 11 to the substrate W side. 12 is formed. As a result, the back surface of the substrate W is supported by the support roller 7 having a part projecting from the opening 12 of the guide member 11 so that it can run.

上記ガイド部材１１の上記基板Ｗの裏面と対向する一側面には、断面形状が台形状の複数の抵抗部材１３がガイド部材１１の上下方向に所定間隔で平行に離間し、かつ幅方向ほぼ全長にわたって設けられている。この実施の形態では、ガイド部材１１の幅方向に沿って同じ高さで形成された開口部１２の下側にそれぞれ上記抵抗部材１３が設けられている。   On one side surface of the guide member 11 facing the back surface of the substrate W, a plurality of resistance members 13 having a trapezoidal cross-sectional shape are spaced apart in parallel in the vertical direction of the guide member 11 at a predetermined interval, and substantially the entire length in the width direction. It is provided over. In this embodiment, the resistance members 13 are respectively provided below the openings 12 formed at the same height along the width direction of the guide member 11.

図２に示すように、７５度で傾斜して搬送される基板Ｗの傾斜方向の上側となる表面には、上下方向に所定間隔で配置された第１の給液手段としての複数の表面用ノズル１４から処理液としての剥離液が供給される。処理液が剥離液の場合、その剥離液は所定の温度である７０〜８０度に加熱される。表面用ノズル１４は、図１に鎖線で示すように基板Ｗの搬送方向の下流側となる上記ガイド部材１１の幅方向の一端部に対向する位置に上下方向に所定間隔、つまり上段、中段及び下段の３箇所に配置されている。 As shown in FIG. 2, a plurality of surfaces serving as first liquid supply means arranged at predetermined intervals in the vertical direction are provided on the surface on the upper side in the inclination direction of the substrate W which is conveyed inclined at 75 degrees. stripping solution as a processing solution is fed from nozzle 1 4. When the treatment liquid is a stripping liquid, the stripping liquid is heated to a predetermined temperature of 70 to 80 degrees. Nozzle 1 4 for surface, a predetermined distance in the vertical direction at a position opposite to one end portion in the width direction of the guide member 11 on the downstream side in the transport direction of the substrate W as indicated by the chain line in FIG. 1, i.e. the upper, It is arranged in three places, middle and lower.

各表面用ノズル１４には剥離液の給液管１５が接続されている。給液管１５は剥離液の給液源１９に第１の流量制御弁２１を介して接続されていて、この給液管１５からは第２の給液手段を構成する複数の分岐管１６（１つのみ図示）が分岐されている。なお、給液源１９は図示しないヒータを有し、内部に収容された処理液を所定の温度に加熱できるようになっている。 The Nozzle 1 4 for each surface liquid supply pipe 15 of the stripping liquid is connected. The liquid supply pipe 15 is connected to a supply liquid source 19 of the stripping liquid via a first flow rate control valve 21, and a plurality of branch pipes 16 ( Only one is shown). The liquid supply source 19 has a heater (not shown) so that the processing liquid accommodated therein can be heated to a predetermined temperature.

各分岐管１６は上記ガイド部材１１の上端部に幅方向に所定間隔で形成された開口部１８に第２の流量制御弁２２を介して接続されている。第１の流量制御弁２１と第２の流量制御弁２２は制御装置２３によって開度を設定できるようになっている。 Each branch pipe 16 is connected to an opening 18 formed at a predetermined interval in the width direction at the upper end of the guide member 11 via a second flow rate control valve 22. The opening degree of the first flow control valve 21 and the second flow control valve 22 can be set by the control device 23.

それによって、所定の温度に加熱された剥離液は、基板Ｗの表面に供給されると同時に、上記開口部１８から基板Ｗの裏面とガイド部材１１との間の隙間１７、つまり基板Ｗの裏面上部にも供給される。つまり、基板Ｗの表面と裏面とに種類及び温度が同じ処理液がそれぞれ第１の流量制御弁２１と第２の流量制御弁２２によって設定された流量で供給される。   Thereby, the stripping solution heated to a predetermined temperature is supplied to the surface of the substrate W, and at the same time, the gap 17 between the back surface of the substrate W and the guide member 11 from the opening 18, that is, the back surface of the substrate W. Also supplied to the top. That is, treatment liquids of the same type and temperature are supplied to the front and back surfaces of the substrate W at the flow rates set by the first flow control valve 21 and the second flow control valve 22, respectively.

なお、この実施の形態では分岐管１６は給液管１５から３本分岐されていて、これらの分岐管１６は上記表面用ノズル１４よりも基板Ｗの搬送方向上流側に位置するよう上記ガイド部材１１の上部に接続されている。   In this embodiment, three branch pipes 16 are branched from the liquid supply pipe 15, and these branch pipes 16 are positioned upstream of the surface nozzle 14 in the transport direction of the substrate W. 11 is connected to the upper part.

上記隙間１７に供給された剥離液はこの隙間１７に充満し、図２に矢印で示すように基板Ｗの裏面上部から下部へと流れる。上記ガイド部材１１の基板Ｗの裏面に対向する一側面には幅方向に沿う複数の抵抗部材１３が上下方向に所定間隔で形成されている。それによって、基板Ｗの裏面に沿って流れる剥離液は、上記隙間１７に位置する上記抵抗部材１３の抵抗によって落下速度が低減される。   The stripping solution supplied to the gap 17 fills the gap 17 and flows from the upper part to the lower part of the back surface of the substrate W as indicated by arrows in FIG. On one side surface of the guide member 11 facing the back surface of the substrate W, a plurality of resistance members 13 along the width direction are formed at predetermined intervals in the vertical direction. As a result, the dropping liquid flowing along the back surface of the substrate W has a drop speed reduced by the resistance of the resistance member 13 located in the gap 17.

つまり、開口部１８から基板Ｗとガイド部材１１とがなす隙間１７の上部に供給された剥離液は、この隙間１７が小さいことによって生じる表面張力と、抵抗部材１３の抵抗とによって上記隙間１７に比較的長い時間滞留しながら隙間１７の下端から流出するようになっている。 That is, the stripping solution supplied from the opening 18 to the upper portion of the gap 17 formed by the substrate W and the guide member 11 enters the gap 17 due to the surface tension generated when the gap 17 is small and the resistance of the resistance member 13. It flows out from the lower end of the gap 17 while staying for a relatively long time.

このように構成された処理装置によって基板Ｗの表面に付着したレジストを剥離処理する場合、搬送手段１によって基板Ｗがガイド部材１１に対向する位置まで搬送されてきたならば、第１、第２の流量制御弁２１，２２が開放され、給液源１９の所定の温度に加熱された処理液が給液管１５を通じて複数の表面用ノズル１４及び分岐管１６が接続された開口部１８に供給される。 When the resist attached to the surface of the substrate W is peeled off by the processing apparatus configured as described above, if the substrate W has been transported to a position facing the guide member 11 by the transporting unit 1, the first and second substrates are used. The flow rate control valves 21 and 22 are opened, and the processing liquid heated to a predetermined temperature of the liquid supply source 19 is supplied through the liquid supply pipe 15 to the opening 18 to which the plurality of surface nozzles 14 and the branch pipes 16 are connected. Is done.

開口部１８に供給された処理液は、基板Ｗが搬送されてきてその裏面がガイド部材１１に対向し、これらの間に隙間１７が形成されると、この隙間１７に沿って流れる。つまり、剥離液はガイド部材１１が設けられていることで、上記隙間１７を形成する基板Ｗの裏面上部から下部に沿って流れることになる。   The processing liquid supplied to the opening 18 flows along the gap 17 when the substrate W is conveyed and the back surface thereof faces the guide member 11 and a gap 17 is formed therebetween. That is, since the guide member 11 is provided, the stripping solution flows from the upper surface to the lower surface of the back surface of the substrate W that forms the gap 17.

基板Ｗが搬送されてその搬送方向の先端部が表面用ノズル１４に対向すると、表面用ノズル１４から流出する剥離液は基板Ｗの表面を上方から下方へと流れる。基板Ｗの先端部が表面用ノズル１４に対向する位置まで搬送されてきた時点では、基板Ｗの搬送方向の先端部は上記隙間１７に供給された剥離液によって温度が上昇している。   When the substrate W is transported and the tip in the transport direction faces the surface nozzle 14, the stripping solution flowing out from the surface nozzle 14 flows from the top to the bottom on the surface of the substrate W. At the time when the front end of the substrate W has been transported to a position facing the front surface nozzle 14, the temperature of the front end of the substrate W in the transport direction is increased by the stripping liquid supplied to the gap 17.

そのため、表面用ノズル１４から基板Ｗの表面に供給される剥離液は、ガイド部材１１と基板Ｗとの隙間１７に供給された剥離液によって加熱された基板Ｗの表面に供給されることになるから、その剥離液は温度上昇した基板Ｗに有効に作用する。つまり、基板Ｗの表面に供給された剥離液は、この基板Ｗの表面を比較的速い速度で流れても、温度上昇した基板Ｗに対して確実に剥離作用を呈することになる。   Therefore, the stripping solution supplied from the surface nozzle 14 to the surface of the substrate W is supplied to the surface of the substrate W heated by the stripping solution supplied to the gap 17 between the guide member 11 and the substrate W. Therefore, the stripping solution effectively acts on the substrate W whose temperature has risen. That is, even if the stripping liquid supplied to the surface of the substrate W flows on the surface of the substrate W at a relatively high speed, the stripping liquid reliably exhibits a stripping action on the substrate W whose temperature has increased.

上記隙間１７に供給された剥離液は、この隙間１７が狭いことによって生じる剥離液の表面張力及びガイド部材１１に設けられた抵抗部材１３による抵抗によって上記隙間１７に滞留する時間が長くなる。つまり、剥離液が隙間１７から流出する時間が長くなる。   The stripping solution supplied to the gap 17 has a longer residence time in the gap 17 due to the surface tension of the stripping solution generated when the gap 17 is narrow and the resistance of the resistance member 13 provided on the guide member 11. That is, the time for the stripping solution to flow out of the gap 17 becomes longer.

剥離液が隙間１７に滞留する時間が長くなれば、隙間１７に供給された剥離液は基板Ｗを確実に温度上昇させることになる。そのため、基板Ｗの表面に供給された剥離液がその表面を速い速度で流れ落ちても、基板Ｗの表面を、この表面に供給された剥離液によって確実に剥離処理することが可能となる。   If the time during which the stripping solution stays in the gap 17 becomes long, the stripping solution supplied to the gap 17 will surely raise the temperature of the substrate W. Therefore, even if the stripping solution supplied to the surface of the substrate W flows down the surface at a high speed, the surface of the substrate W can be surely stripped by the stripping solution supplied to the surface.

基板Ｗの表面には上下方向に沿って所定間隔で配置された３つの表面用ノズル１４から剥離液が供給される。そのため、基板Ｗの表面では上部よりも下部の方が処理液の流量が多くなるため、下部の方が上部よりも温度が高くなる虞がある。   A stripping solution is supplied to the surface of the substrate W from three front surface nozzles 14 arranged at predetermined intervals along the vertical direction. For this reason, on the surface of the substrate W, the flow rate of the processing liquid is higher in the lower part than in the upper part, so that the temperature in the lower part may be higher than that in the upper part.

しかしながら、基板Ｗの裏面の上部には、開口部１８に接続された分岐管１６から表面に供給される剥離液と同じ温度に加熱された剥離液が供給される。しかも、裏面上部に供給された剥離液は隙間１７を緩やかな速度で流れることになる。   However, a stripping solution heated to the same temperature as the stripping solution supplied to the surface from the branch pipe 16 connected to the opening 18 is supplied to the upper part of the back surface of the substrate W. Moreover, the stripping solution supplied to the upper part of the back surface flows through the gap 17 at a moderate speed.

したがって、基板Ｗの上部は、裏面に供給された剥離液と表面に供給された剥離液とによって加熱されるから、下部に流れる剥離液の量が多くなっても、上部とほぼ同じ温度に加熱される。それによって、基板Ｗは表面の上部と下部とに温度差が生じ難くなるから、剥離液によって上下方向をほぼ均一に処理されることになる。   Therefore, since the upper part of the substrate W is heated by the stripping solution supplied to the back surface and the stripping solution supplied to the front surface, even if the amount of the stripping solution flowing to the lower part increases, it is heated to substantially the same temperature as the upper part. Is done. As a result, the temperature difference between the upper and lower surfaces of the substrate W is less likely to occur, so that the substrate W is processed substantially uniformly in the vertical direction by the stripping solution.

さらに、基板Ｗの表面に剥離液を供給する上下３つの表面用ノズル１４は第１の流量制御弁２１によってそれぞれ供給量を制御することができる。そのため、下部の表面用ノズル１４から供給される剥離液の供給量を、上部に位置する表面用ノズル１４から供給される供給量よりも少なくすれば、基板Ｗの上下方向の温度差をより一層、少なくすることが可能となる。   Furthermore, the supply amount of the upper and lower three surface nozzles 14 for supplying the stripping solution to the surface of the substrate W can be controlled by the first flow control valve 21. Therefore, if the supply amount of the stripping solution supplied from the lower surface nozzle 14 is smaller than the supply amount supplied from the upper surface nozzle 14, the temperature difference in the vertical direction of the substrate W is further increased. , It becomes possible to reduce.

基板Ｗの表面と裏面とに同じ処理液、つまり剥離液を供給するようにしている。そのため、基板Ｗの表面と裏面とに供給された剥離液を、まとめて回収して再使用することができるから、便利である。   The same processing liquid, that is, the stripping liquid is supplied to the front surface and the back surface of the substrate W. Therefore, it is convenient because the stripping solution supplied to the front and back surfaces of the substrate W can be collected and reused.

図４はこの発明のガイド部材１１に設けられる抵抗部材の変形例を示す第２の実施の形態である。この実施の形態に示された抵抗部材１３Ａは、ガイド部材１１の幅方向に対して複数に分割されている。このような抵抗部材１３Ａを用いれば、第１の実施の形態に示されたように、抵抗部材１３が幅方向全長にわたる長さに形成された場合に比べ、剥離液が落下する際に与える抵抗が小さくなる。   FIG. 4 is a second embodiment showing a modification of the resistance member provided in the guide member 11 of the present invention. The resistance member 13 </ b> A shown in this embodiment is divided into a plurality of parts in the width direction of the guide member 11. If such a resistance member 13A is used, as shown in the first embodiment, compared to the case where the resistance member 13 is formed to have a length over the entire length in the width direction, the resistance given when the stripping solution falls. Becomes smaller.

すなわち、基板Ｗとガイド部材１１との間の隙間１７を流れる剥離液に与える抵抗は、ガイド部材１１に設けられる抵抗部材の形状や隙間１７の大きさなどによって調整することが可能である。   That is, the resistance given to the stripping solution flowing through the gap 17 between the substrate W and the guide member 11 can be adjusted by the shape of the resistance member provided in the guide member 11 and the size of the gap 17.

また、ガイド部材１１に抵抗部材を設けて隙間を流れる剥離液に抵抗を与えるようにしたが、隙間を十分に小さくすることで、抵抗部材を設けなくても、隙間を流れる剥離液によって基板を所定の温度に温めることは可能である。   In addition, a resistance member is provided on the guide member 11 to provide resistance to the stripping solution flowing through the gap. However, by sufficiently reducing the gap, the substrate is removed by the stripping solution flowing through the gap without providing a resistance member. It is possible to warm to a predetermined temperature.

また、処理液として剥離液を例に上げたが、基板を加熱された剥離液以外の処理液で処理する必要があれば、剥離液以外の処理液の場合であっても、この発明を適用することができる。   Further, the stripping solution is taken as an example of the processing solution. However, if it is necessary to treat the substrate with a processing solution other than the heated stripping solution, the present invention is applied even in the case of a processing solution other than the stripping solution. can do.

なお、処理液としては剥離液以外に、たとえば現像液やエッチング液などを用いることがあり、現像液の場合には２３〜２５度、エッチング液の場合には３０〜６０度の温度に加熱して使用することで、処理効果を高めることができる。   In addition to the stripping solution, for example, a developing solution, an etching solution, or the like may be used as the processing solution. By using these, the processing effect can be enhanced.

基板の裏面側の隙間には、処理液として表面に供給する剥離液と同じ剥離液を供給するようにしたが、表面に供給される処理液と異なる種類の処理液、たとえば剥離液に比べて安価な処理液を供給するようにしてもよく、要は基板を裏面側から加熱することができる処理液であればよい。   In the gap on the back side of the substrate, the same stripping solution as the stripping solution supplied to the surface is supplied as the processing solution, but compared to a processing solution of a different type from the processing solution supplied to the surface, for example, the stripping solution Inexpensive processing liquid may be supplied. In short, any processing liquid that can heat the substrate from the back side may be used.

図５はこの発明の第３の実施の形態を示す。この実施の形態は第１の実施の形態に示されたガイド部材１１を用いず、分岐管１６に第２の流量制御弁２２を介して第２の給液手段としての裏面用ノズル体２５を接続する。そして、この裏面用ノズル体２５によって搬送される基板Ｗの裏面上部に所定の温度に加熱された処理液としての剥離液を直接、供給するようにした。
図５では裏面用ノズル体２５は１つしか示されていないが、裏面用ノズル体２５は１つでなく、基板Ｗの搬送方向に沿って所定間隔で複数配置されている。 FIG. 5 shows a third embodiment of the present invention. In this embodiment, the guide member 11 shown in the first embodiment is not used, and the back surface nozzle body 25 as the second liquid supply means is provided in the branch pipe 16 via the second flow rate control valve 22. Connecting. Then, a stripping liquid as a processing liquid heated to a predetermined temperature is directly supplied to the upper part of the back surface of the substrate W transported by the back surface nozzle body 25.
Although only one back surface nozzle body 25 is shown in FIG. 5, the back surface nozzle body 25 is not one, and a plurality of back surface nozzle bodies 25 are arranged along the transport direction of the substrate W at a predetermined interval.

このような構成によれば、搬送される基板Ｗの裏面上部には裏面用ノズル体２５によって所定の温度に加熱された剥離液が供給され、その剥離液によって基板Ｗの裏面上部が加熱される。基板Ｗの裏面上部に供給された剥離液は、一部が裏面の上部から下部に沿って流れるが、残りの剥離液は基板Ｗの裏面上部から落下してしまう。   According to such a configuration, the peeling liquid heated to a predetermined temperature by the back surface nozzle body 25 is supplied to the upper back surface of the substrate W to be transported, and the upper back surface of the substrate W is heated by the peeling liquid. . A part of the stripping solution supplied to the upper back surface of the substrate W flows from the upper portion of the back surface along the lower portion, but the remaining stripping solution falls from the upper surface of the back surface of the substrate W.

一方、基板Ｗの表面には上下方向に所定間隔で配置された複数の表面用ノズル１４から剥離液が供給される。基板Ｗの表面に供給された剥離液は、その表面の上部から下部に流れることで、上部よりも下部の方が流量が多くなる。したがって、基板Ｗの表面は下部の方が上部よりも温度が高くなる。   On the other hand, the peeling liquid is supplied to the surface of the substrate W from a plurality of front surface nozzles 14 arranged at predetermined intervals in the vertical direction. The stripping solution supplied to the surface of the substrate W flows from the upper part to the lower part of the surface, so that the lower part has a higher flow rate than the upper part. Therefore, the temperature of the lower surface of the substrate W is higher at the lower part than at the upper part.

しかしながら、基板Ｗの裏面上部には裏面用ノズル体２５から所定温度の剥離液が供給される。つまり、基板Ｗの裏面は下部よりも上部の方が高い温度に加熱されるから、基板Ｗの裏面の加熱状態が表面に反映される。その結果、基板Ｗの表面は、上下方向がほぼ同じ温度に加熱されることになるから、その表面に供給された剥離液によって均一な処理を行なうことができる。   However, a stripping solution at a predetermined temperature is supplied from the back surface nozzle body 25 to the upper surface of the back surface of the substrate W. That is, since the upper surface of the back surface of the substrate W is heated to a higher temperature than the lower portion, the heating state of the back surface of the substrate W is reflected on the front surface. As a result, the surface of the substrate W is heated to substantially the same temperature in the vertical direction, so that uniform processing can be performed with the stripping solution supplied to the surface.

この発明の第１の実施の形態を示し、搬送手段によってガイド部材の前面側を搬送される基板の正面図。The front view of the board | substrate which shows 1st Embodiment of this invention and is conveyed the front side of a guide member by a conveyance means. 搬送手段によって搬送される基板および基板の裏面側に設けられるガイド部材の縦断面図。The longitudinal cross-sectional view of the board | substrate conveyed by a conveyance means and the guide member provided in the back surface side of a board | substrate. ガイド部材の斜視図。The perspective view of a guide member. この発明の第２の実施の形態を示すガイド部材の斜視図。The perspective view of the guide member which shows 2nd Embodiment of this invention. この発明の第３の実施の形態を示す構成図。The block diagram which shows 3rd Embodiment of this invention.

符号の説明Explanation of symbols

１…搬送手段、２…駆動ローラ、３…駆動源、７…支持ローラ、１１…ガイド部材、１３…抵抗部材、１４…ノズル体（第１の給液手段）、１５…給液管、１６…分岐管（第２の給液手段）、１７…隙間。   DESCRIPTION OF SYMBOLS 1 ... Conveyance means, 2 ... Drive roller, 3 ... Drive source, 7 ... Support roller, 11 ... Guide member, 13 ... Resistance member, 14 ... Nozzle body (first liquid supply means), 15 ... Liquid supply pipe, 16 ... branch pipe (second liquid supply means), 17 ... gap.

Claims (5)

搬送される基板の表面を所定温度に加熱された処理液によって処理する基板の処理装置であって、
上記基板を上記表面が傾斜方向上側となるよう所定の角度で傾斜させて搬送する搬送手段と、
この搬送手段によって搬送される基板の傾斜方向上側となる上記表面に上記処理液を供給する第１の給液手段と、
上記搬送手段によって搬送される基板の搬送方向の上記第１の給液手段よりも上流側に配置され上記基板の傾斜方向下側となる裏面の上部に所定温度に加熱された処理液を供給する第２の給液手段と、
上記搬送手段によって搬送される基板の裏面側に設けられ上記第２の給液手段によって基板の裏面の上部に供給された処理液を基板の裏面に沿って流れるようガイドするガイド部材と
を具備したことを特徴とする基板の処理装置。 A substrate processing apparatus for processing a surface of a substrate to be transported with a processing liquid heated to a predetermined temperature,
Transport means for transporting the substrate at a predetermined angle so that the surface is on the upper side in the tilt direction;
First liquid supply means for supplying the treatment liquid to the surface on the upper side in the inclination direction of the substrate conveyed by the conveyance means;
A processing liquid heated to a predetermined temperature is supplied to the upper part of the back surface, which is arranged on the upstream side of the first liquid supply means in the transport direction of the substrate transported by the transport means and is below the tilt direction of the substrate. A second liquid supply means;
A guide member that is provided on the back side of the substrate transported by the transport means and guides the processing liquid supplied to the upper part of the back surface of the substrate by the second liquid supply means so as to flow along the back surface of the substrate . A substrate processing apparatus. 上記ガイド部材には、上記基板の裏面に沿って流れる処理液に抵抗を与える抵抗部材が設けられていることを特徴とする請求項１記載の基板の処理装置。 The substrate processing apparatus according to claim 1 , wherein the guide member is provided with a resistance member that provides resistance to the processing liquid flowing along the back surface of the substrate. 上記第１の給液手段は、上記基板の上下方向に沿って所定間隔で配置された複数のノズル体であって、各ノズル体から上記基板の表面に供給される処理液の供給量は流量制御弁によって制御されることを特徴とする請求項１記載の基板の処理装置。   The first liquid supply means is a plurality of nozzle bodies arranged at predetermined intervals along the vertical direction of the substrate, and the supply amount of the processing liquid supplied from each nozzle body to the surface of the substrate is a flow rate. 2. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is controlled by a control valve. 搬送される基板の表面を所定温度に加熱された処理液によって処理する基板の処理方法であって、
上記基板を上記表面が傾斜方向上側となるよう所定の角度で傾斜させて搬送する工程と、
搬送される基板の傾斜方向上側となる上記表面に所定温度に加熱された処理液を供給する工程と、
搬送される基板の上記表面に所定温度に加熱された処理液を供給する前に、傾斜方向下側となる裏面の上部に所定温度に加熱された処理液を供給する工程と、
上記基板の裏面の上部に供給された処理液を、この基板の裏面に沿って流れるようガイドする工程と
を具備したことを特徴とする基板の処理方法。 A substrate processing method for processing a surface of a substrate to be transported with a processing liquid heated to a predetermined temperature,
Transporting the substrate inclined at a predetermined angle so that the surface is on the upper side in the inclination direction;
Supplying a treatment liquid heated to a predetermined temperature to the surface on the upper side in the inclination direction of the substrate to be conveyed;
Before supplying the processing liquid heated to a predetermined temperature to the front surface of the substrate to be transported , supplying the processing liquid heated to a predetermined temperature to the upper part of the back surface on the lower side in the inclined direction;
And a step of guiding the processing liquid supplied to the upper part of the back surface of the substrate so as to flow along the back surface of the substrate. 上記基板の裏面に沿って流れる処理液を、抵抗部材により流れ速度を低下させて流す工程を有することを特徴とする請求項４記載の基板の処理方法。 The substrate processing method according to claim 4, further comprising a step of flowing the processing liquid flowing along the back surface of the substrate at a reduced flow rate by a resistance member.
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