TW201940241A - Substrate processing device and substrate processing method to accurately measure the film thickness at each position - Google Patents

Substrate processing device and substrate processing method to accurately measure the film thickness at each position Download PDF

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TW201940241A
TW201940241A TW107145534A TW107145534A TW201940241A TW 201940241 A TW201940241 A TW 201940241A TW 107145534 A TW107145534 A TW 107145534A TW 107145534 A TW107145534 A TW 107145534A TW 201940241 A TW201940241 A TW 201940241A
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substrate
distance
nozzle
distance measuring
film
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TW107145534A
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TWI762748B (en
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西岡賢太郎
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日商斯庫林集團股份有限公司
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Coating Apparatus (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

The invention provides a film thickness measuring technology which can accurately measure the film thickness of each position, and can be programmed into a film-forming process. The substrate processing device 1 of the invention obtains information by establishing the correspondence between the first distance to a substrate main surface Sa measured by a distance measuring part 6 and the position detection result of a distance measuring part 6 obtained by a position detection part 55, and the correspondence between the second distance to the film formed on a substrate main surface Sa and the position detection result of a distance measuring part 6 obtained by a position detection part 55. Based on the information, the thickness of the film corresponding to the position is calculated according to the difference between the first distance and the second distance when the positions relative to the distance measuring part 6 of the substrate S are the same.

Description

基板處理裝置及基板處理方法Substrate processing device and substrate processing method

本發明涉及一種利用塗布液在基板的主面上形成膜的基板處理裝置及基板處理方法，且特別涉及一種測量所述膜的膜厚的技術。另外，所述基板包括：半導體基板、光罩用基板、液晶顯示用基板、有機電致發光（Electroluminescence，EL）顯示用基板、等離子體顯示用基板、場發射顯示器（Field Emission Display，FED）用基板、光碟用基板、磁片用基板、磁光碟用基板等。The present invention relates to a substrate processing apparatus and a substrate processing method for forming a film on a main surface of a substrate using a coating liquid, and in particular, to a technology for measuring a film thickness of the film. In addition, the substrate includes a semiconductor substrate, a photomask substrate, a liquid crystal display substrate, an organic electroluminescence (EL) display substrate, a plasma display substrate, and a field emission display (FED). Substrate, substrate for optical disc, substrate for magnetic sheet, substrate for magneto-optical disc, and the like.

在半導體裝置或液晶顯示裝置等電子零件等的製造步驟中，廣泛地進行將含有成膜材料的液體塗布在基板的主面上來成膜。例如，以在基板主面上形成抗蝕劑膜、絕緣膜、保護膜等為目的而實施此種成膜。在此種塗布裝置中，例如有為了確認膜的狀態並使成膜條件最佳化，而設置有用於測量剛形成後的膜厚的機構者。In the manufacturing steps of electronic components such as a semiconductor device and a liquid crystal display device, a liquid containing a film-forming material is widely applied to form a film on a main surface of a substrate. For example, such a film formation is performed for the purpose of forming a resist film, an insulating film, a protective film, and the like on the main surface of the substrate. In such a coating device, for example, a mechanism for measuring the film thickness immediately after formation is provided in order to confirm the state of the film and optimize film formation conditions.

例如在專利文獻1中記載的技術中，先測量形成塗布膜前的基材的表面高度，並從成膜後的表面高度減去基材的表面高度，由此求出膜厚。另外，在專利文獻2中記載的技術中，在相對於基材進行掃描移動的噴嘴的前後設置光學感測器，且將膜厚作為噴嘴前方側的光學感測器所檢測的基材表面的高度與噴嘴後方側的光學感測器所檢測的膜表面的高度的差來求出。For example, in the technique described in Patent Document 1, the thickness of the substrate is measured by first measuring the surface height of the substrate before forming the coating film, and subtracting the surface height of the substrate from the surface height after film formation. In addition, in the technology described in Patent Document 2, an optical sensor is provided in front of and behind the nozzle that scans and moves with respect to the substrate, and the film thickness is used as the thickness of the substrate surface detected by the optical sensor on the front side of the nozzle. The difference between the height and the height of the film surface detected by the optical sensor on the rear side of the nozzle was obtained.

[現有技術文獻] [專利文獻] 專利文獻1：日本專利特開2011-255260號公報 專利文獻2：日本專利特開2006-181566號公報[Prior Art Document] [Patent Document] Patent Document 1: Japanese Patent Laid-Open No. 2011-255260 Patent Document 2: Japanese Patent Laid-Open No. 2006-181566

[發明所要解決的問題] 基板的表面高度及膜的厚度未必固定，在各位置上不同。因此，如所述現有技術那樣僅取得膜表面的高度與基板的高度的差的方法雖然可求出平均的膜厚，但存在無法正確地檢測各位置的膜厚這一問題。[Problems to be Solved by the Invention] The height of the surface of the substrate and the thickness of the film are not necessarily fixed, and are different at each position. Therefore, although the method of obtaining only the difference between the height of the film surface and the height of the substrate as in the prior art described above can obtain an average film thickness, there is a problem that the film thickness at each position cannot be accurately detected.

另外，有時為了確保塗布後的膜的品質而要求全數檢查，在此情況下，必須不對成膜的生產性造成影響來測量膜厚。但是，在專利文獻1中記載的技術中，通過基材與高度檢測器的相對移動而首先測量基材的表面高度後，必須從原來的位置再次執行相對移動來測量膜的表面高度。這使成膜的生產性下降，因此並非可編入連續的成膜工序（process）中的技術。In addition, in order to ensure the quality of the film after coating, a full inspection may be required. In this case, it is necessary to measure the film thickness without affecting the productivity of the film formation. However, in the technique described in Patent Document 1, after the surface height of the substrate is first measured by the relative movement of the substrate and the height detector, the relative movement must be performed again from the original position to measure the surface height of the film. This reduces the productivity of film formation, and therefore is not a technology that can be incorporated into a continuous film formation process.

本發明是鑒於所述課題而成者，其目的在於提供一種在利用塗布液在基板的主面上形成膜的基板處理裝置及基板處理方法中，可正確地測量各位置的膜厚，而且可編入成膜工序中的膜厚測量技術。 [解決問題的技術手段]The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a substrate processing apparatus and a substrate processing method for forming a film on a main surface of a substrate using a coating solution. Film thickness measurement technology incorporated in the film formation process. [Technical means to solve the problem]

本發明的一形態是將流體噴出至基板的主面上的基板處理裝置，為了達成所述目的，在將塗布液的膜形成在基板的主面上的基板處理裝置中包括：噴嘴，一面從狹縫狀的噴出口噴出所述塗布液，一面相對於所述基板相對移動來將所述塗布液塗布在所述主面上而形成所述膜；測距部，面對所述主面來配置，測量至所述主面為止的第1距離及至塗布在所述主面上的所述膜的表面為止的第2距離；移動部，使所述基板與所述測距部在沿著所述主面的移動方向上相對移動；位置檢測部，在所述移動方向上，檢測相對於所述基板的所述測距部的位置；資訊取得部，取得將所述位置檢測部所檢測的所述測距部的位置與所述測距部在此位置上所測量的所述第1距離建立了對應的第1資訊、及將所述位置檢測部所檢測的所述測距部的位置與所述測距部在此位置上所測量的所述第2距離建立了對應的第2資訊；以及膜厚算出部，基於所述第1資訊及所述第2資訊，根據相對於所述基板的所述測距部的位置彼此相同時的所述第1距離與所述第2距離的差來算出對應於此位置的所述膜的厚度。One aspect of the present invention is a substrate processing apparatus that ejects a fluid onto a main surface of a substrate. In order to achieve the above-mentioned object, the substrate processing apparatus that forms a film of a coating solution on the main surface of the substrate includes: a nozzle; The slit-shaped ejection outlet ejects the coating liquid, and the coating liquid is coated on the main surface to form the film while one side is relatively moved relative to the substrate; the distance measuring portion is formed to face the main surface. And a first distance to the main surface and a second distance to the surface of the film coated on the main surface are measured, and the moving portion is such that the substrate and the distance measuring portion are along A relative movement in the moving direction of the main surface; a position detecting unit detecting the position of the distance measuring unit with respect to the substrate in the moving direction; an information acquiring unit acquiring the position detected by the position detecting unit The first information corresponding to the position of the distance measuring unit and the first distance measured by the distance measuring unit at this position, and the position of the distance measuring unit detected by the position detecting unit. With the distance measuring unit at this position The second information corresponding to the second distance is established; and the film thickness calculation unit is based on the first information and the second information based on the position of the distance measuring unit with respect to the substrate. The difference between the first distance and the second distance is used to calculate the thickness of the film corresponding to the position.

另外，本發明的另一形態是使從狹縫狀的噴出口中噴出塗布液的噴嘴相對於基板相對移動，而將所述塗布液塗布在所述基板的主面上來形成所述塗布液的膜的基板處理方法，為了達成所述目的，使面對所述主面來配置的測距部相對於所述基板在沿著所述主面的移動方向上相對移動，通過位置檢測部來檢測所述移動方向上的相對於所述基板的所述測距部的位置，並且所述測距部測量至所述主面為止的第1距離及至塗布在所述主面上的所述膜的表面為止的第2距離，並取得將所述位置檢測部所檢測的所述測距部的位置與所述測距部在此位置上所測量的所述第1距離建立了對應的第1資訊、及將所述位置檢測部所檢測的所述測距部的位置與所述測距部在此位置上所測量的所述第2距離建立了對應的第2資訊，且基於所述第1資訊及所述第2資訊，根據相對於所述基板的所述測距部的位置彼此相同時的所述第1距離與所述第2距離的差來算出對應於此位置的所述膜的厚度。In another aspect of the present invention, the nozzle for ejecting the coating liquid from the slit-shaped discharge port is relatively moved with respect to the substrate, and the coating liquid is coated on the main surface of the substrate to form a film of the coating liquid. In order to achieve the object, the distance measuring unit disposed facing the main surface is moved relative to the substrate in a moving direction along the main surface, and the position detection unit detects the A position of the distance measuring portion with respect to the substrate in the moving direction, and the distance measuring portion measures a first distance to the main surface and a surface of the film coated on the main surface The second distance up to that, and obtain first information corresponding to the position of the distance measuring unit detected by the position detecting unit and the first distance measured by the distance measuring unit at this position, And second information corresponding to the position of the distance measuring unit detected by the position detection unit and the second distance measured by the distance measuring unit at this position, and based on the first information And the second information, based on the relative The position of the ranging portion of the difference with respect to each other while the first distance and the second distance calculated thickness of the film corresponding to this position.

在如此構成的發明中，在基板與測距部的相對移動時檢測相對於基板的測距部的位置。根據其結果，將由測距部所測量的至主面為止的第1距離與此時的測距部的位置作為第1資訊來建立對應。另外，將由測距部所測量的至膜表面為止的第2距離與此時的測距部的位置作為第2資訊來建立關聯。因此，可經由第1資訊及第2資訊而將在相同位置上測量的第1距離與第2距離建立關聯。因此，通過求出第1距離與第2距離的差，可正確地求出此位置上的膜的厚度。In the invention thus constituted, the position of the distance measuring portion relative to the substrate is detected when the substrate and the distance measuring portion are relatively moved. Based on the results, the first distance measured by the distance measuring unit to the main surface and the position of the distance measuring unit at this time are associated as the first information. In addition, the second distance to the film surface measured by the distance measuring unit and the position of the distance measuring unit at this time are associated as the second information. Therefore, the first distance and the second distance measured at the same position can be correlated through the first information and the second information. Therefore, by calculating the difference between the first distance and the second distance, the thickness of the film at this position can be accurately obtained.

而且，由於如所述那樣將第1距離及第2距離的測量結果與測距部的位置建立對應，因此各自的測量可在個別的時機執行。因此，可不對成膜的節拍時間（takt time）造成影響，而將膜厚的測量編入成膜工序中。 [發明的效果]Furthermore, as described above, the measurement results of the first distance and the second distance are associated with the positions of the distance measuring unit, so that the respective measurements can be performed at individual timings. Therefore, the measurement of the film thickness can be incorporated into the film formation process without affecting the takt time of the film formation. [Effect of the invention]

如以上那樣，根據本發明，將測距部所測量的至基板的主面及膜的表面為止的距離與相對於基板的測距部的位置檢測結果建立了對應，因此可根據同一位置上的距離的差而在各位置上正確地測量膜的厚度，另外，可不對成膜的節拍時間造成影響而在成膜工序中執行膜厚的測量。As described above, according to the present invention, since the distance measured by the distance measuring unit to the main surface of the substrate and the surface of the film is correlated with the position detection result of the distance measuring unit with respect to the substrate, it can be based on the The difference in distance accurately measures the thickness of the film at each position, and it is possible to perform the measurement of the thickness of the film in the film-forming process without affecting the tact time of the film formation.

圖1是表示作為本發明的基板處理裝置的第1實施方式的塗布裝置的立體圖。另外，在圖1及以後的各圖中，為了使這些圖的方向關係變得明確，適宜附加將Z方向設為垂直方向，將XY平面設為水平面的XYZ正交坐標系。另外，為了容易理解，視需要將各部的尺寸或數量誇張或簡化來描繪。FIG. 1 is a perspective view showing a coating apparatus as a first embodiment of a substrate processing apparatus of the present invention. In addition, in each of FIG. 1 and subsequent figures, in order to make the directional relationship of these figures clear, it is appropriate to add an XYZ orthogonal coordinate system in which the Z direction is set to the vertical direction and the XY plane is set to the horizontal plane. In addition, for easy understanding, the size or number of each part is exaggerated or simplified as necessary to depict it.

塗布裝置1是使用狹縫噴嘴2將塗布液塗布在基板S的表面上的被稱為狹縫塗布機的塗布裝置。塗布裝置1可使用抗蝕液，彩色濾光片用液，包含聚醯亞胺、聚醯亞胺前體、矽、納米金屬油墨、導電性材料的漿料等各種塗布液作為其塗布液。另外，關於成為塗布物件的基板S，也可以應用於矩形玻璃基板、半導體基板、膜液晶用可撓性基板、光罩用基板、彩色濾光片用基板、太陽電池用基板、有機EL用基板等各種基板。尤其，塗布裝置1適合於將高黏度的液體用作塗布液。另外，在本說明書中，所謂“基板S的表面Sa”，是指基板S的兩主面中的塗布有塗布液之側的主面。如後述那樣，在此塗布裝置1中，在將基板S載置在水平的平臺（stage）4上的狀態下進行塗布動作，此時的基板S的上表面相當於表面Sa。The coating apparatus 1 is a coating apparatus called a slit coater that applies a coating liquid to the surface of the substrate S using a slit nozzle 2. The coating device 1 can use various coating liquids such as a resist liquid, a liquid for a color filter, and a slurry containing polyimide, a polyimide precursor, silicon, a nano-metal ink, and a conductive material, as the coating liquid. The substrate S to be coated can also be applied to rectangular glass substrates, semiconductor substrates, flexible substrates for film liquid crystals, substrates for photomasks, substrates for color filters, substrates for solar cells, and substrates for organic ELs. And other substrates. In particular, the coating device 1 is suitable for using a liquid having a high viscosity as a coating liquid. In addition, in this specification, the "surface Sa of the board | substrate S" means the main surface of the side where the coating liquid was apply | coated among the two main surfaces of the board | substrate S. As described later, in this coating apparatus 1, the coating operation is performed with the substrate S placed on a horizontal stage 4. The upper surface of the substrate S at this time corresponds to the surface Sa.

塗布裝置1包括：平臺4，能夠以水平姿勢吸附保持基板S；塗布處理部5，使用狹縫噴嘴2對由平臺4保持的基板S實施塗布處理；噴嘴清洗裝置（省略圖示），在塗布處理之前對狹縫噴嘴2實施清洗處理；預分配裝置（省略圖示），在塗布處理之前對狹縫噴嘴2實施預分配處理；以及控制部8，對所述各部進行控制。The coating device 1 includes a platform 4 capable of sucking and holding the substrate S in a horizontal posture; a coating processing unit 5 that applies a coating process to the substrate S held by the platform 4 using a slit nozzle 2; and a nozzle cleaning device (not shown) A cleaning process is performed on the slit nozzle 2 before the process; a pre-dispensing device (not shown) performs a pre-distribution process on the slit nozzle 2 before the coating process; and a control unit 8 controls the respective units.

狹縫噴嘴2具有作為在X方向上延長的長條狀的開口部的噴出口。而且，狹縫噴嘴2可從噴出口朝由平臺4保持的基板S的表面Sa噴出塗布液。The slit nozzle 2 has a discharge port which is an elongated opening portion extending in the X direction. Further, the slit nozzle 2 can eject the coating liquid from the ejection port toward the surface Sa of the substrate S held by the stage 4.

平臺4包含具有大致長方體的形狀的花崗岩等石材，在其上表面（+Z側）中的（-Y）側包括被加工成大致水平的平坦面來保持基板S的保持面41。未圖示的多個真空吸附口分散地形成在保持面41上。通過這些真空吸附口來吸附基板S，由此在塗布處理時將基板S在規定的位置上保持成大致水平狀態。另外，基板S的保持形態並不限定於此，例如也能夠以機械式地保持基板3的方式構成。The platform 4 includes a stone material such as granite having a substantially rectangular parallelepiped shape, and a (-Y) side of an upper surface (+ Z side) of the platform 4 includes a holding surface 41 that is processed into a substantially horizontal flat surface to hold the substrate S. A plurality of vacuum suction ports (not shown) are formed on the holding surface 41 in a dispersed manner. By sucking the substrate S through these vacuum suction openings, the substrate S is held at a predetermined position at a substantially horizontal state during the coating process. The holding form of the substrate S is not limited to this. For example, it may be configured to mechanically hold the substrate 3.

在本實施方式的塗布裝置1中，使狹縫噴嘴2在Y方向上移動的移動機構設置在塗布處理部5上。移動機構具有橋樑結構的噴嘴支撐體51與噴嘴移動部53作為主要的結構，所述噴嘴支撐體51在平臺4的上方橫貫X方向來支撐狹縫噴嘴2，所述噴嘴移動部53使噴嘴支撐體51及由其支撐的狹縫噴嘴2沿著在Y方向上延長的一對導軌52水平移動。噴嘴支撐體51具有將X方向作為長邊方向來支撐狹縫噴嘴2的樑構件51a、及分別支撐樑構件51a的X方向端部的一對柱構件51b。In the coating apparatus 1 of the present embodiment, a moving mechanism that moves the slit nozzle 2 in the Y direction is provided on the coating processing unit 5. The moving mechanism has a bridge-structured nozzle support body 51 and a nozzle moving part 53 as the main structures. The nozzle support body 51 supports the slit nozzle 2 across the X direction above the platform 4. The nozzle moving part 53 supports the nozzle. The body 51 and the slit nozzle 2 supported by the body 51 move horizontally along a pair of guide rails 52 extending in the Y direction. The nozzle support body 51 includes a beam member 51 a that supports the slit nozzle 2 with the X direction as the long side direction, and a pair of pillar members 51 b that support the X-direction ends of the beam member 51 a, respectively.

在樑構件51a的（-X）側側面上設置有高度感測器6。雖然詳細情況將後述，但高度感測器6向下射出光束並接收其反射光，測量至位於高度感測器6的下方的相向面為止的距離。例如可將公知的鐳射位移計用作高度感測器6。A height sensor 6 is provided on the (-X) side surface of the beam member 51a. Although the details will be described later, the height sensor 6 emits a light beam downward and receives the reflected light, and measures the distance to the facing surface below the height sensor 6. For example, a known laser displacement meter can be used as the height sensor 6.

如此構成的噴嘴支撐體51如圖1所示，具有沿著X軸方向架設在平臺4的左右兩端部，並橫跨保持面41的架橋結構。噴嘴移動部53作為相對移動部件發揮功能，所述相對移動部件使作為所述架橋結構體的噴嘴支撐體51與固定保持在其上的狹縫噴嘴2相對於保持在平臺4上的基板S，沿著Y軸方向相對移動。As shown in FIG. 1, the thus configured nozzle support body 51 has a bridge structure that is bridged on the left and right ends of the platform 4 along the X-axis direction and spans the holding surface 41. The nozzle moving part 53 functions as a relative moving member that makes the nozzle support 51 as the bridge structure and the slit nozzle 2 fixedly held thereon with respect to the substrate S held on the stage 4, Relative movement along the Y axis.

噴嘴移動部53在±X側分別包括：在Y軸方向上引導狹縫噴嘴2的移動的導軌52、作為驅動源的線性馬達54、及用於檢測狹縫噴嘴2的噴出口的位置的位置感測器55。The nozzle moving section 53 includes, on the ± X side, a guide rail 52 that guides the movement of the slit nozzle 2 in the Y-axis direction, a linear motor 54 as a driving source, and a position for detecting the position of the ejection outlet of the slit nozzle 2. Ensor 55.

兩個導軌52分別以包含從噴嘴清洗位置（噴嘴清洗裝置的配設位置）至塗布結束位置（保持面41的-Y側端部位置）為止的區間的方式，沿著Y軸方向延設在平臺4的X軸方向的兩端部。因此，通過噴嘴移動部53而沿著所述兩個導軌52引導兩個柱構件51b的下端部，由此狹縫噴嘴2在噴嘴清洗位置和與保持在平臺4上的基板S相向的位置之間移動。The two guide rails 52 are extended along the Y-axis direction so as to include a section from the nozzle cleaning position (the position where the nozzle cleaning device is disposed) to the coating end position (the -Y side end position of the holding surface 41). Both ends of the stage 4 in the X-axis direction. Therefore, the lower end portions of the two column members 51b are guided along the two guide rails 52 by the nozzle moving portion 53, whereby the slit nozzle 2 is at a nozzle cleaning position and a position facing the substrate S held on the stage 4. Between moves.

在本實施方式中，各線性馬達54作為具有定子54a與動子54b的交流（Alternating Current，AC）無芯線性馬達來構成。定子54a沿著Y軸方向設置在平臺4的X軸方向的兩側面上。另一方面，動子54b相對於升降機構51b的外側固定設置。線性馬達54通過所述定子54a與動子54b之間產生的磁力而作為噴嘴移動部53的驅動源發揮功能。In this embodiment, each linear motor 54 is configured as an alternating current (AC) coreless linear motor having a stator 54 a and a mover 54 b. The stators 54 a are provided on both sides of the platform 4 in the X-axis direction along the Y-axis direction. On the other hand, the mover 54b is fixed to the outside of the elevating mechanism 51b. The linear motor 54 functions as a drive source of the nozzle moving section 53 by a magnetic force generated between the stator 54 a and the mover 54 b.

另外，各位置感測器55具有所謂的線性編碼器（linear encoder）的結構，分別具有尺規部55a與檢測部55b。尺規部55a沿著Y軸方向設置在平臺4上所固定設置的線性馬達54的定子54a的下部。另一方面，檢測部55b固定設置在升降機構51b上所固定設置的線性馬達54的動子54b的更外側，並與尺規部55a相向配置。在尺規部55a中以固定間隔設置有方格刻度，每當相對於尺規部55a相對移動的檢測部55b讀取刻度時，從檢測部55b中輸出脈衝信號。檢測部55b的輸出信號被輸入至控制部8中。如後述那樣，根據尺規部55a與檢測部55b的相對的位置關係，檢測Y軸方向上的狹縫噴嘴2的噴出口的位置。In addition, each position sensor 55 has a structure called a linear encoder, and has a ruler portion 55a and a detection portion 55b, respectively. The ruler portion 55 a is provided along the Y-axis direction on the lower portion of the stator 54 a of the linear motor 54 fixedly provided on the platform 4. On the other hand, the detection section 55b is fixedly disposed further outside the mover 54b of the linear motor 54 fixedly provided on the elevating mechanism 51b, and is disposed to face the ruler section 55a. The ruler section 55a is provided with checkered scales at regular intervals, and a pulse signal is output from the detection section 55b every time the scale is read by the detection section 55b that is relatively moved with respect to the ruler section 55a. An output signal of the detection section 55 b is input to the control section 8. As described later, the position of the discharge port of the slit nozzle 2 in the Y-axis direction is detected based on the relative positional relationship between the ruler portion 55a and the detection portion 55b.

圖2是表示此塗布裝置的主要結構與其動作的概要的側面圖。噴嘴支撐體51的樑構件51a是具有大致U字型剖面，並使開口部向下的通道型的構造物。例如可由不銹鋼等金屬或碳纖維強化樹脂等來構成樑構件51a。在樑構件51a的開口部分中收容有狹縫噴嘴2。更具體而言，狹縫噴嘴2經由噴嘴升降機構22而安裝在樑構件51a中。噴嘴升降機構22使狹縫噴嘴2在垂直方向（Z方向）上升降。由此，狹縫噴嘴2可在相對於平臺4上的基板S接近及分離的方向上移動。FIG. 2 is a side view showing an outline of a main structure and an operation of the coating apparatus. The beam member 51a of the nozzle support body 51 is a channel-shaped structure having a substantially U-shaped cross section and having an opening portion facing downward. For example, the beam member 51a may be made of a metal such as stainless steel or a carbon fiber reinforced resin. A slit nozzle 2 is housed in the opening portion of the beam member 51a. More specifically, the slit nozzle 2 is mounted in the beam member 51 a via the nozzle lifting mechanism 22. The nozzle raising and lowering mechanism 22 raises and lowers the slit nozzle 2 in a vertical direction (Z direction). This allows the slit nozzle 2 to move in a direction approaching and separating from the substrate S on the stage 4.

狹縫噴嘴2的下端與平臺4上的基板S的表面Sa相向，在所述下端設置有將X方向作為長邊方向的狹縫狀的噴出口21。通過狹縫噴嘴2的升降，可變更噴出口21與基板S的距離。在將噴出口21相對於基板S的表面Sa隔開規定的間隙相向配置的狀態下從噴出口21中噴出塗布液，由此將塗布液塗布在基板S的表面Sa上。The lower end of the slit nozzle 2 faces the surface Sa of the substrate S on the stage 4, and a slit-shaped ejection port 21 having the X direction as the long side direction is provided at the lower end. The distance between the ejection port 21 and the substrate S can be changed by raising and lowering the slit nozzle 2. The coating liquid is sprayed on the surface Sa of the substrate S by ejecting the coating liquid from the spraying holes 21 with the discharge openings 21 facing each other with a predetermined gap on the surface Sa of the substrate S.

進而，噴嘴移動部53使噴嘴支撐體51在Y方向上移動，由此相對於基板S，狹縫噴嘴2的噴出口21沿著表面Sa掃描移動，由此利用塗布液在基板S的表面Sa上形成膜F。Further, the nozzle moving unit 53 moves the nozzle support body 51 in the Y direction, thereby scanning the nozzle 21 of the slit nozzle 2 along the surface Sa with respect to the substrate S, thereby using the coating liquid on the surface Sa of the substrate S. A film F was formed thereon.

當噴嘴移動部53使狹縫噴嘴2在水平方向（Y方向）上移動時，位置感測器55的檢測部55b與其一體地移動，每當讀取設置在尺規部55a中的方格刻度時，即每當狹縫噴嘴2前進固定距離時輸出脈衝信號。控制部8對從檢測部55b中輸出的脈衝數進行計數，由此檢測從規定的基準位置起的檢測部55b的位移量，由此檢測狹縫噴嘴2的位置。狹縫噴嘴2與高度感測器6在水平方向上經由噴嘴支撐體51而一體地移動。因此，位置感測器55的輸出信號是表示狹縫噴嘴2的水平位置的信號，同時也是表示高度感測器6的水平方向位置的信號。When the nozzle moving section 53 moves the slit nozzle 2 in the horizontal direction (Y direction), the detection section 55b of the position sensor 55 moves integrally with it, and whenever the checkered scale provided in the ruler section 55a is read , That is, a pulse signal is output every time the slit nozzle 2 advances a fixed distance. The control unit 8 detects the position of the slit nozzle 2 by counting the number of pulses output from the detection unit 55b, thereby detecting the displacement amount of the detection unit 55b from a predetermined reference position. The slit nozzle 2 and the height sensor 6 are integrally moved in the horizontal direction via the nozzle support body 51. Therefore, the output signal of the position sensor 55 is a signal indicating the horizontal position of the slit nozzle 2 and is also a signal indicating the horizontal position of the height sensor 6.

圖3是表示高度感測器的結構的圖。高度感測器6包括：投光部61，朝測量物件物T向下射出鐳射光束L；驅動器62，驅動投光部61；光接收部63，檢測來自測量對象物T的反射光；以及信號處理部64，對從光接收部63中輸出的信號進行處理。在此實施方式中，測量物件物T是基板S的表面Sa或形成在此表面Sa上的膜F的表面。高度感測器6具有利用下述的原理，測量從此高度感測器6至測量物件物T為止的距離，即以高度感測器6的配設位置為基準時的測量物件物T在垂直方向上的高度的功能。FIG. 3 is a diagram showing a configuration of a height sensor. The height sensor 6 includes a light projection unit 61 that emits a laser beam L downward toward the measurement object T; a driver 62 that drives the light projection unit 61; a light receiving unit 63 that detects reflected light from the measurement object T; and a signal The processing unit 64 processes a signal output from the light receiving unit 63. In this embodiment, the measurement object T is the surface Sa of the substrate S or the surface of the film F formed on the surface Sa. The height sensor 6 has a principle of measuring the distance from the height sensor 6 to the measurement object T by using the following principle, that is, the measurement object T when the height sensor 6 is arranged is used as a reference in the vertical direction. Features on the height.

從投光部61中射出的光L由測量物件物T的表面反射，反射光由光接收部63接收。光接收部63為一維圖像感測器，如圖中由虛線箭頭所示那樣，朝向光接收部63的反射光的射入位置對應於高度感測器6與測量物件物T的距離而變化。信號處理部64可利用此點，檢測高度感測器6與正下方位置的測量物件物T的距離。高度感測器6固定在樑構件51a上。因此，追隨狹縫噴嘴2的朝水平方向的移動，但垂直方向位置被固定，而不追隨狹縫噴嘴2的升降。因此，高度感測器6可檢測位於正下方位置上的基板S的表面Sa的垂直方向高度、或形成在基板S上的膜F的表面的垂直方向高度。另外，作為高度感測器6，只要是可檢測與相向面的距離者即可，並不限定於利用所述原理者。The light L emitted from the light projecting section 61 is reflected by the surface of the measurement object T, and the reflected light is received by the light receiving section 63. The light receiving section 63 is a one-dimensional image sensor. As shown by the dotted arrow in the figure, the incident position of the reflected light toward the light receiving section 63 corresponds to the distance between the height sensor 6 and the measurement object T. Variety. The signal processing unit 64 can use this point to detect the distance between the height sensor 6 and the measurement object T located directly below. The height sensor 6 is fixed to the beam member 51a. Therefore, the horizontal movement of the slit nozzle 2 is followed, but the position in the vertical direction is fixed, and the elevation of the slit nozzle 2 is not followed. Therefore, the height sensor 6 can detect the vertical height of the surface Sa of the substrate S located directly below the position, or the vertical height of the surface of the film F formed on the substrate S. The height sensor 6 is not limited to a person using the principle as long as it can detect the distance from the facing surface.

圖4是表示此塗布裝置的控制部的電氣結構的方塊圖。控制部8包括：中央處理器（Central Processing Unit，CPU）81，執行規定的控制程式來使裝置各部執行規定的動作；記憶體（memory）82，短期地存儲通過CPU81的動作而生成的資料；儲存器（storage）83，存儲CPU81應執行的控制程式或各種資料；以及介面（interface）84，用於與外部裝置及操作員的資訊的交換。FIG. 4 is a block diagram showing an electrical configuration of a control unit of the coating apparatus. The control unit 8 includes: a central processing unit (CPU) 81 that executes a predetermined control program to cause each unit of the device to perform a predetermined action; and a memory 82 that temporarily stores data generated by the operation of the CPU 81; A storage 83 stores a control program or various data that the CPU 81 should execute; and an interface 84 for exchanging information with external devices and operators.

控制部8對所述裝置各部進行控制，具體而言，除對噴嘴升降機構22、噴嘴移動部53進行控制以外，對視需要朝設置在平臺4上的吸附口供給用於吸附基板S的負壓的吸附控制部42、朝狹縫噴嘴2中供給塗布液的塗布液供給部25等進行控制。The control unit 8 controls the various parts of the device. Specifically, in addition to controlling the nozzle lifting mechanism 22 and the nozzle moving unit 53, the control unit 8 supplies the negative electrode for suctioning the substrate S to the suction port provided on the platform 4 as necessary. The pressure adsorption control unit 42, the coating liquid supply unit 25 that supplies the coating liquid to the slit nozzle 2, and the like are controlled.

另外，CPU81執行存儲在儲存器83中的控制程式，以軟體（software）方式實現資訊取得部811及膜厚算出部812等功能塊。資訊取得部811對從位置感測器55中輸出的脈衝信號進行計數，並根據其計數值來製作表示相對於基板S的高度感測器6的Y方向的相對位置的位置資訊。另外，雖然詳細情況將後述，但資訊取得部811根據從高度感測器6及位置感測器55中輸出的信號，取得將由高度感測器6所檢測的基板S或膜F的表面的高度資訊與根據檢測到此高度時的位置感測器55的輸出的位置資訊建立了對應的對應資訊。膜厚算出部812根據所取得的對應資訊，在Y方向各位置上算出形成在基板S的表面Sa上的膜F的厚度。由此，求出表示膜F的各位置的厚度分佈的膜厚輪廓。可通過根據位置感測器55的輸出所製作的位置資訊來掌握所求出的膜厚是基板S上的哪個位置的膜厚。In addition, the CPU 81 executes a control program stored in the memory 83 and implements functional blocks such as the information acquisition unit 811 and the film thickness calculation unit 812 in software. The information acquisition unit 811 counts the pulse signals output from the position sensor 55 and generates position information indicating a relative position in the Y direction with respect to the height sensor 6 of the substrate S based on the count value. Although the details will be described later, the information acquisition unit 811 obtains the height of the surface of the substrate S or the film F to be detected by the height sensor 6 based on signals output from the height sensor 6 and the position sensor 55. The information corresponds to the corresponding information based on the position information output by the position sensor 55 when this height is detected. The film thickness calculation unit 812 calculates the thickness of the film F formed on the surface Sa of the substrate S at each position in the Y direction based on the obtained correspondence information. As a result, a film thickness profile indicating a thickness distribution at each position of the film F is obtained. The position information created on the basis of the output of the position sensor 55 can be used to determine which position of the substrate S the film thickness is.

圖5（a）至圖5（e）是表示此塗布裝置的塗布動作的圖。圖5（a）表示塗布處理部5的初期位置。塗布處理部5的初期位置是在水平方向上比平臺4上的基板S更偏向（+Y）側的位置，此時，狹縫噴嘴2變成退避至上方的狀態。當開始塗布動作時，噴嘴移動部53使狹縫噴嘴2從初期位置朝塗布開始位置移動。5 (a) to 5 (e) are diagrams showing a coating operation of the coating apparatus. FIG. 5 (a) shows the initial position of the coating processing unit 5. The initial position of the coating processing unit 5 is a position shifted more toward the (+ Y) side than the substrate S on the stage 4 in the horizontal direction. At this time, the slit nozzle 2 is retracted to the upper state. When the coating operation is started, the nozzle moving unit 53 moves the slit nozzle 2 from the initial position to the coating start position.

圖5（b）表示塗布開始位置。塗布開始位置是在水平方向上，狹縫噴嘴2比基板S的（+Y）側端部略微偏向基板S的內側的位置。在狹縫噴嘴2的從初期位置起的水平移動後，如圖5（b）所示，噴嘴移動部53使狹縫噴嘴2下降，將噴出口21定位在相對於基板S的表面Sa隔開規定的間隙相向的位置上。此時的狹縫噴嘴2的位置為塗布開始位置。FIG. 5 (b) shows the application start position. The application start position is a position where the slit nozzle 2 is slightly biased toward the inner side of the substrate S than the (+ Y) side end portion of the substrate S in the horizontal direction. After the slit nozzle 2 is horizontally moved from the initial position, as shown in FIG. 5 (b), the nozzle moving portion 53 lowers the slit nozzle 2 and positions the ejection port 21 at a distance from the surface Sa of the substrate S. The predetermined gaps are facing each other. The position of the slit nozzle 2 at this time is a coating start position.

從此狀態開始來自噴出口21的塗布液的噴出，並且如圖5（c）所示，開始狹縫噴嘴2的朝（-Y）方向的掃描移動。在相對於基板S的表面Sa保持固定的間隙的狀態下，狹縫噴嘴2沿著基板S的表面Sa以固定速度掃描移動，由此利用塗布液在基板S的表面Sa上形成膜F。From this state, the application liquid from the ejection port 21 is ejected, and as shown in FIG. 5 (c), the scanning movement of the slit nozzle 2 in the (-Y) direction is started. In a state where a fixed gap is maintained with respect to the surface Sa of the substrate S, the slit nozzle 2 scans and moves at a constant speed along the surface Sa of the substrate S, thereby forming a film F on the surface Sa of the substrate S with a coating liquid.

如圖5（d）所示，若狹縫噴嘴2到達基板S的（-Y）側端部附近的塗布結束位置為止，則停止來自噴出口21的塗布液的噴出，如圖中由虛線所示那樣，狹縫噴嘴2退避至上方。至此為止是塗布動作。然後，如圖5（e）所示，狹縫噴嘴2朝（+Y）方向移動，最終返回至圖5（a）中所示的初期位置。以下將此動作稱為“返回動作”。As shown in FIG. 5 (d), when the slit nozzle 2 reaches the coating end position near the (-Y) side end of the substrate S, the spraying of the coating liquid from the discharge port 21 is stopped, as shown by the dotted line in the figure In this way, the slit nozzle 2 retracts upward. So far, it is a coating operation. Then, as shown in FIG. 5 (e), the slit nozzle 2 moves in the (+ Y) direction, and finally returns to the initial position shown in FIG. 5 (a). This action is hereinafter referred to as a "return action".

另外，在所述動作中，狹縫噴嘴2在從初期位置至塗布結束位置為止之間往返移動，其中，將狹縫噴嘴2從初期位置移動至塗布結束位置為止的塗布動作時的路徑稱為“去路”，將從塗布結束位置移動至初期位置為止的返回動作的路徑稱為“歸路”。In the operation described above, the slit nozzle 2 moves back and forth from the initial position to the coating end position, and the path during the coating operation that moves the slit nozzle 2 from the initial position to the coating end position is referred to as The "return path" refers to a path of a return operation from the application end position to the initial position.

在將膜F依次形成在多個基板S上的連續成膜工序中，針對每一片基板S重複執行所述處理。另外，所述返回動作是為了開始對於下一個基板S的塗布動作，用於在不從噴出口21中噴出塗布液的狀態下、且在狹縫噴嘴2已退避至上方的狀態下使狹縫噴嘴2返回至初期位置的動作。此動作不對成膜作出貢獻，因此可將此時的狹縫噴嘴2的移動速度設為比塗布動作中的移動速度高的速度。In a continuous film formation process in which the film F is sequentially formed on a plurality of substrates S, the process is repeatedly performed for each substrate S. The return operation is to start a coating operation for the next substrate S, and is used to make the slit in a state in which the coating liquid is not ejected from the ejection port 21 and in a state where the slit nozzle 2 has been retracted upward. The operation of returning the nozzle 2 to the initial position. Since this operation does not contribute to film formation, the moving speed of the slit nozzle 2 at this time can be set to a higher speed than the moving speed in the coating operation.

在所述一連串的動作中，在此實施方式中，對成為處理物件的所有基板S測量形成在其表面Sa上的膜F的厚度。若所測量的膜厚脫離規定範圍，則停止動作。由此，針對經處理的基板S可保持固定的成膜品質，另外，對應於檢測結果隨時執行成膜條件的最佳化，由此可穩定地執行品質良好的成膜。以下，對其處理內容進行說明。In the series of operations, in this embodiment, the thickness of the film F formed on the surface Sa of all the substrates S to be processed is measured. If the measured film thickness is out of a predetermined range, the operation is stopped. As a result, a fixed film formation quality can be maintained for the processed substrate S, and optimization of the film formation conditions can be performed at any time in accordance with the detection result, so that high-quality film formation can be performed stably. The processing content will be described below.

圖6是表示此塗布裝置的動作的流程圖。此動作通過控制部8的CPU81執行存儲在儲存器83中的控制程式而使裝置各部進行規定的動作來執行。另外，關於使用狹縫噴嘴2將塗布液塗布在基板S上的塗布動作、及塗布結束後的狹縫噴嘴2的返回動作，之前對概要進行了說明，因此此處主要對與膜厚測量相關的動作進行說明。FIG. 6 is a flowchart showing the operation of the coating apparatus. This operation is executed when the CPU 81 of the control unit 8 executes a control program stored in the memory 83 and causes each unit of the apparatus to perform a predetermined operation. In addition, since the coating operation of applying the coating liquid on the substrate S using the slit nozzle 2 and the return operation of the slit nozzle 2 after the coating is completed, the outline has been described previously. Therefore, the film thickness measurement is mainly relevant here. The operation will be described.

在塗布動作之前，開始利用高度感測器6的高度測量及利用位置感測器55的位置測量（步驟S101）。其後，開始所述塗布動作的執行（步驟S102）。在塗布動作的開始時間點，高度感測器6朝平臺4的上表面41上照射光束L，並檢測以高度感測器6的位置為基準時的上表面41的高度。若噴嘴移動部53為了使狹縫噴嘴2水平移動而使噴嘴支撐體51移動，則在基板S的（+Y）側端部到達高度感測器6的正下方位置的時間點所檢測的高度急劇地變化，由此檢測基板S的端部位置。資訊取得部811始終監視高度感測器6的輸出，由此可檢測相對於狹縫噴嘴2相對移動的基板S的端部。Before the coating operation, the height measurement by the height sensor 6 and the position measurement by the position sensor 55 are started (step S101). Thereafter, execution of the coating operation is started (step S102). At the start time of the coating operation, the height sensor 6 irradiates the light beam L onto the upper surface 41 of the stage 4 and detects the height of the upper surface 41 when the position of the height sensor 6 is used as a reference. When the nozzle moving part 53 moves the nozzle support 51 in order to move the slit nozzle 2 horizontally, the height detected at the time when the (+ Y) side end of the substrate S reaches the position directly below the height sensor 6 The position of the end of the substrate S is detected by a sudden change. The information acquisition unit 811 constantly monitors the output of the height sensor 6 and thereby can detect the end of the substrate S that is relatively moved with respect to the slit nozzle 2.

若基板S的端部得到檢測（步驟S103），則以此端部為基準，每當根據來自位置感測器55的輸出脈衝所檢測的高度感測器6的位置到達事先決定的測量位置時（步驟S104），取得高度感測器6的輸出信號（步驟S105）。例如，可從基板S的端部起每隔一毫米執行高度測量。安裝在CPU81中的資訊取得部811在各位置上取得由高度感測器6所測量的基板S上表面Sa的高度資訊、及表示檢測到此高度資訊時的高度感測器6的水平方向位置的位置感測器55的位置資訊，並使將這些資訊一對一地建立了對應的“第1資訊”存儲保存在記憶體82中（步驟S106）。If the end of the substrate S is detected (step S103), the end of the substrate S is used as a reference, and whenever the position of the height sensor 6 detected based on the output pulse from the position sensor 55 reaches a predetermined measurement position (Step S104), the output signal of the height sensor 6 is acquired (step S105). For example, the height measurement may be performed every one millimeter from the end of the substrate S. The information acquisition unit 811 installed in the CPU 81 acquires the height information of the upper surface Sa of the substrate S measured by the height sensor 6 and the horizontal position of the height sensor 6 when the height information is detected at each position. The position information of the position sensor 55 is stored, and the “first information” corresponding to the one-to-one correspondence is stored in the memory 82 (step S106).

若狹縫噴嘴2到達基板S的（-Y）側端部為止且塗布動作結束（步驟S107），則執行用於使狹縫噴嘴2返回至初期位置的返回動作（步驟S108）。如圖5（d）所示，在塗布動作結束時間點，高度感測器6到達比基板S的（-Y）側端部更（-Y）側為止。因此，根據高度感測器6的輸出，也可以對基板S的（-Y）側端部位置進行檢測。When the slit nozzle 2 reaches the (-Y) side end of the substrate S and the coating operation is completed (step S107), a return operation for returning the slit nozzle 2 to the initial position is performed (step S108). As shown in FIG. 5 (d), at the time when the coating operation ends, the height sensor 6 reaches the (-Y) side more than the (-Y) side end of the substrate S. Therefore, the position of the (-Y) side end portion of the substrate S can also be detected based on the output of the height sensor 6.

在返回動作中也繼續進行利用高度感測器6的高度測量。即，在檢測到基板S的（-Y）側端部後（步驟S109），每當根據位置感測器55的輸出所求出的高度感測器6的水平方向位置到達規定的測量位置時（步驟S110），取得高度感測器6的輸出信號（步驟S111），將此時的位置感測器55的位置資訊與高度資訊作為“第2資訊”建立對應並存儲保存在記憶體82中（步驟S112）。此時，由高度感測器6測量的是形成在基板S的表面Sa上的膜F的表面的高度。The height measurement by the height sensor 6 is also continued during the return operation. That is, after the (-Y) side end portion of the substrate S is detected (step S109), each time the horizontal position of the height sensor 6 obtained from the output of the position sensor 55 reaches a predetermined measurement position. (Step S110), the output signal of the height sensor 6 is obtained (Step S111), and the position information and height information of the position sensor 55 at this time are associated with "second information" and stored in the memory 82 (Step S112). At this time, the height of the surface of the film F formed on the surface Sa of the substrate S is measured by the height sensor 6.

在返回動作結束且狹縫噴嘴2返回至初期位置之前（步驟S113），繼續執行高度測量。在返回動作的結束時間點，狹縫噴嘴2返回至圖5（a）所示的初期位置為止，此時高度感測器6移動至比基板S的（+Y）側端部更（+Y）側為止。因此，在返回動作中，也可以根據高度感測器6的輸出信號來掌握基板S的（+Y）側端部位置。Until the return operation ends and the slit nozzle 2 returns to the initial position (step S113), the height measurement is continued. At the end time of the return operation, the slit nozzle 2 returns to the initial position shown in FIG. 5 (a). At this time, the height sensor 6 moves to (+ Y) more than the (+ Y) side end of the substrate S. ) To the side. Therefore, during the return operation, the position of the (+ Y) side end portion of the substrate S can be grasped based on the output signal of the height sensor 6.

若如所述那樣在去路中取得將塗布前的基板S的表面Sa的高度資訊與位置資訊建立了對應的第1資訊，另外在歸路中取得將塗布後的膜F表面的高度資訊與位置資訊建立了對應的第2資訊，則膜厚算出部812在兩者之間進行對位後（步驟S114），求出表示膜F的各位置上的厚度的膜厚輪廓（步驟S115）。通過以上方式而完成對於一片基板S的處理。當繼續對新的基板S進行處理時，在更換基板S後重複所述動作。If the first information corresponding to the height information and the position information of the surface Sa of the substrate S before coating is obtained in the way as described above, the height information and position of the surface of the film F after the coating is obtained in the return route. After the information is associated with the second information, the film thickness calculation unit 812 performs alignment between the two (step S114), and obtains a film thickness profile indicating the thickness at each position of the film F (step S115). The processing for one substrate S is completed in the above manner. When the processing of the new substrate S is continued, the operation is repeated after the substrate S is replaced.

圖7（a）至圖7（c）是表示膜厚算出的原理的圖。圖7（a）表示在塗布動作中所求出的將高度資訊與位置資訊建立了對應的“第1資訊”的例子。另外，圖7（b）表示在返回動作中所求出的將高度資訊與位置資訊建立了對應的“第2資訊”的例子。此處，將基板S的Y方向尺寸設為1000毫米，其（+Y）側端部在相對於狹縫噴嘴2的相對移動中成為基板S的最前側，因此將其稱為基板S的“前端”或“基板前端”。同樣地，有時將相反側即（-Y）側的端部稱為“後端”。7 (a) to 7 (c) are diagrams showing the principle of film thickness calculation. FIG. 7 (a) shows an example of “first information” obtained by correlating height information and position information in the coating operation. In addition, FIG. 7 (b) shows an example of the "second information" obtained by correlating the height information and the position information obtained in the return operation. Here, the Y-direction dimension of the substrate S is set to 1000 mm, and the (+ Y) side end portion thereof becomes the foremost side of the substrate S during the relative movement with respect to the slit nozzle 2. Therefore, it is referred to as “the substrate S” Front end "or" substrate front end ". Similarly, an end portion on the opposite side, that is, the (-Y) side is sometimes referred to as a "rear end".

如圖7（a）所示，在塗布動作時所製作的第1資訊中，從基板前端起每隔Y方向的一毫米，依次取得基板S的表面Sa的高度測量值A。另一方面，在返回動作中，如圖7（b）所示，從離基板前端最遠的位置起，依次取得膜F表面的高度測量值B。在所述測量值A、測量值B中，可能產生由基板S及膜F的厚度的偏差所引起的變動。As shown in FIG. 7 (a), in the first information produced during the coating operation, the height measurement value A of the surface Sa of the substrate S is sequentially obtained every one millimeter from the front end of the substrate in the Y direction. On the other hand, in the return operation, as shown in FIG. 7 (b), the height measurement values B on the surface of the film F are sequentially obtained from the position farthest from the front end of the substrate. The measurement value A and the measurement value B may cause variations due to variations in the thickness of the substrate S and the film F.

根據這些測量結果，如圖7（c）所示，取得與基板前端的距離相同的位置的基板高度測量值A與膜高度測量值B的差，由此可求出此位置上的膜厚。在各位置上進行相同的運算，由此可求出表示各位置的膜厚的膜厚輪廓。Based on these measurement results, as shown in FIG. 7 (c), the difference between the substrate height measurement value A and the film height measurement value B at the same distance from the substrate tip is obtained, and the film thickness at this position can be obtained. By performing the same calculation at each position, a film thickness profile indicating the film thickness at each position can be obtained.

如此，在此實施方式中，在相對於基板S的狹縫噴嘴2的往返動作中的去路中測量塗布前的基板表面Sa的高度，另外在歸路中測量塗布後的膜F表面的高度。將高度測量值與此時的高度感測器6的位置建立對應並存儲在記憶體82中，因此進行在去路與歸路之間相互對應的位置彼此的高度測量值的減法，由此即便當在基板S或膜F的厚度中存在變動時，也可以正確地求出各位置的膜厚。As described above, in this embodiment, the height of the substrate surface Sa before coating is measured during the return path during the reciprocating operation of the slit nozzle 2 with respect to the substrate S, and the height of the surface of the film F after coating is measured during the return path. The height measurement value is associated with the position of the height sensor 6 at this time and stored in the memory 82. Therefore, the height measurement values of the positions corresponding to each other between the forward path and the return path are subtracted from each other. When there is variation in the thickness of the substrate S or the film F, the film thickness at each position can be accurately obtained.

為了對多個基板S連續地進行塗布，對於一片基板S的處理中的狹縫噴嘴2的往返動作是不論是否需要膜厚測量均必需的步驟。本實施方式中的膜厚測量並非對此種連續的成膜工序的節拍時間造成影響者，不會成為降低生產性的原因。因此，本實施方式的膜厚測量方法適合作為連續成膜工序中的線上膜厚測量方法。In order to continuously coat a plurality of substrates S, the reciprocating operation of the slit nozzle 2 during the processing of one substrate S is a necessary step regardless of whether a film thickness measurement is required. The film thickness measurement in this embodiment does not affect the tact time of such a continuous film formation process, and does not cause a reduction in productivity. Therefore, the film thickness measurement method of this embodiment is suitable as an online film thickness measurement method in a continuous film formation process.

另外，如所述那樣存在狹縫噴嘴2的移動速度在去路與歸路之間不同的情況，但通過先將高度測量值與測量位置的資訊建立對應來取得，不論移動速度，均可進行去路與歸路之間的測量位置的適當的對位。因此，即便當在去路或歸路的任一者中噴嘴移動速度在掃描移動中變化時，也可以正確地測量膜厚。若僅按時間序列順序記錄測量資料，則無法獲得此種效果。In addition, as described above, the moving speed of the slit nozzle 2 may be different between the forward path and the return path. However, it is obtained by associating the height measurement value with the information of the measurement position first, and the forward path can be performed regardless of the moving speed. Proper alignment of the measurement position with the return path. Therefore, the film thickness can be accurately measured even when the nozzle moving speed is changed in the scanning movement in either the forward or backward path. This effect cannot be obtained if the measurement data is recorded only in time series order.

然而，在所述實施方式的說明中，成為前提的是根據位置感測器55的輸出來求出並與由高度感測器6所得的高度資訊建立了對應的位置資訊表示高度感測器6進行了高度測量的時刻的高度感測器6的相對於基板S的水平方向位置。但是，在實際的裝置中，可能存在所記錄的位置資訊未表示高度感測器6的正確的位置的情況。其原因在於：在根據位置感測器55的輸出的位置檢測及利用高度感測器6的高度檢測中，在物理的現象的變化作為信號被探測之前分別存在時間延遲，另外，在判斷高度感測器6已到達測量位置後此資訊傳遞至各部，實際取入高度感測器6的輸出信號之前的期間內也存在時間延遲。However, in the description of the embodiment, it is assumed that the position information indicating the height sensor 6 is obtained based on the output of the position sensor 55 and corresponds to the height information obtained by the height sensor 6. The position of the height sensor 6 relative to the substrate S at the time when the height measurement was performed. However, in an actual device, the recorded position information may not indicate the correct position of the height sensor 6. The reason is that in the position detection based on the output of the position sensor 55 and the height detection using the height sensor 6, there is a time delay before a change in a physical phenomenon is detected as a signal, and in addition, in determining the height sensor This information is transmitted to the departments after the sensor 6 has reached the measurement position, and there is also a time delay during the period before the output signal of the height sensor 6 is actually taken in.

當在狹縫噴嘴2的同一方向、同一速度的移動時執行基板S的高度測量與膜F的高度測量時，在兩測量中產生等量的時間延遲，因此在求出差分方面不會特別成為問題。但是，在狹縫噴嘴2的移動方向及移動速度的至少一者不同的情況下，可能產生無法忽視由此時間延遲（回應時間）所引起的誤差的情況。繼而，說明對於此問題的應對。When the height measurement of the substrate S and the height measurement of the film F are performed while the slit nozzle 2 is moving in the same direction and at the same speed, an equal amount of time delay occurs between the two measurements, so it will not be particularly difficult to find the difference. problem. However, when at least one of the moving direction and the moving speed of the slit nozzle 2 is different, there may be a case where an error due to a time delay (response time) cannot be ignored. Then, the response to this problem will be explained.

圖8（a）至圖8（c）是說明對於回應時間的應對的原理的圖。圖8（a）是表示去路中的回應時間的時序圖。將高度感測器6的輸出信號設為以固定的採樣週期始終輸出者。另外，由符號Y（k）表示高度感測器6應執行測量的第k個（k=1、2、…）測量位置。例如，若將測量位置間的間隔設為對應於作為線性編碼器的位置感測器55的輸出脈衝數10者，則如圖所示，每從位置感測器55中輸出十個脈衝，取入一次高度感測器6的輸出。此時，脈衝計數值達到規定值，對應於此取入高度感測器6的輸出之前的期間內產生時間延遲量ΔT。8 (a) to 8 (c) are diagrams illustrating the principle of response to response time. FIG. 8 (a) is a timing chart showing the response time in the forward route. The output signal of the height sensor 6 is set to always output at a fixed sampling period. In addition, the kth (k = 1, 2, ...) measurement position at which the height sensor 6 should perform measurement is indicated by a symbol Y (k). For example, if the interval between the measurement positions is set to correspond to the number of output pulses of the position sensor 55 as a linear encoder, as shown in the figure, for every ten pulses output from the position sensor 55, take Enter the output of the height sensor 6 once. At this time, the pulse count value reaches a predetermined value, and a time delay amount ΔT is generated corresponding to the period before the output from the height sensor 6 is taken in.

圖中，圓形符號表示將高度感測器6的信號作為有效的信號取入的樣品的取得時機。如此，根據位置感測器55的輸出來檢測已到達測量位置，對應於此取得高度測量值之前存在時間差ΔT，在此期間內高度感測器6也移動。因此，高度測量值已確定時的高度感測器6的位置並非原本的位置Y（k），而變成從位置Y（k）僅朝基板S的後端側偏移了由時間差ΔT與移動速度的積所表示的位移量ΔYa的位置。In the figure, the circular symbol indicates the acquisition timing of the sample in which the signal of the height sensor 6 is taken as a valid signal. In this way, the output of the position sensor 55 is used to detect that the measurement position has been reached. Corresponding to the time difference ΔT before the height measurement value is obtained, the height sensor 6 also moves during this period. Therefore, when the height measurement value is determined, the position of the height sensor 6 is not the original position Y (k), but is shifted from the position Y (k) only to the rear end side of the substrate S by the time difference ΔT and the moving speed. The position of the displacement amount ΔYa represented by the product of.

若考慮歸路，則如圖8（b）所示，高度感測器6的採樣週期與所述相同，但由於狹縫噴嘴2的移動速度高，因此位置感測器55的脈衝輸出週期變短，另外，狹縫噴嘴2（及光學感測器6）的移動方向變成與所述相反的從基板S的後端側朝向前端側的方向。If the return path is considered, as shown in FIG. 8 (b), the sampling period of the height sensor 6 is the same as described above, but since the moving speed of the slit nozzle 2 is high, the pulse output period of the position sensor 55 becomes variable. It is short, and the moving direction of the slit nozzle 2 (and the optical sensor 6) becomes a direction from the rear end side of the substrate S toward the front end side, which is opposite to that described above.

與去路同樣地，當位置感測器55的輸出脈衝的計數值已達到規定值時進行高度測量。可認為由裝置的回應時間所產生的時間延遲量ΔT不變，因此對應於測量位置Y（k）的高度測量值變成在從測量位置Y（k）僅朝基板前端側偏移了ΔYb的位置上取得的值。此偏移量ΔYb是時間差ΔT乘以狹縫噴嘴2的移動速度所得的值，若移動速度與去路不同，則偏移量也不同。As with the outgoing path, the height measurement is performed when the count value of the output pulse of the position sensor 55 has reached a predetermined value. It can be considered that the time delay amount ΔT caused by the response time of the device does not change. Therefore, the height measurement value corresponding to the measurement position Y (k) is shifted from the measurement position Y (k) only to the front end side of the substrate by ΔYb. The value obtained on. This offset amount ΔYb is a value obtained by multiplying the time difference ΔT by the moving speed of the slit nozzle 2. If the moving speed is different from the forward path, the offset amount is also different.

如此，對應於測量位置Y（k）的實際的高度取得位置在去路中僅偏移ΔYa，在歸路中僅偏移ΔYb，且其偏移方向相反。因此，去路及歸路之間的位置偏移量變成（ΔYa＋ΔYb）。因此，對應於相同的測量位置Y（k）的高度測量值A、高度測量值B的比較可能包含誤差。In this way, the actual height acquisition position corresponding to the measurement position Y (k) is shifted only by ΔYa in the forward path, and is shifted only by ΔYb in the return path, and its shift direction is opposite. Therefore, the amount of positional deviation between the forward path and the return path becomes (ΔYa + ΔYb). Therefore, the comparison of the height measurement value A and the height measurement value B corresponding to the same measurement position Y (k) may include an error.

消除此問題的一個方法是在取得高度測量值的時間點進行加入所述偏移量的時間或測量位置的改變。即，可事先實驗性求出所述偏移量ΔT、偏移量ΔYa、偏移量ΔYb等。因此，在去路及歸路的至少一者中，使測量位置的設定或高度測量值的取入時機僅改變將此偏移估計在內的量，由此可使去路與歸路之間的實際有效的測量位置一致。One way to eliminate this problem is to change the time of adding the offset or the measurement position at the point in time when the height measurement is taken. That is, the offset amount ΔT, the offset amount ΔYa, the offset amount ΔYb, and the like can be experimentally obtained in advance. Therefore, in at least one of the return path and the return path, the setting of the measurement position or the acquisition timing of the height measurement value is changed by only the amount estimated by this offset, so that the actual between the return path and the return path can be made. Effective measurement positions are consistent.

圖8（c）表示消除所述問題的另一方法。在此例中，將高度測量本身設為與所述實施方式相同而不進行改變。作為替代，採用根據將在測量位置Y（k）上取得的高度測量值的前後的測量值對所述高度測量值進行內插的方法。如圖所示，對應於測量位置Y（k）所取得的基板表面Sa的高度測量值A（k）實際是在從原本的位置Y（k）僅朝後端側偏移了ΔYa的位置上取得的值。Fig. 8 (c) shows another method for eliminating the problem. In this example, the height measurement itself is set to be the same as the above-mentioned embodiment without change. Instead, a method of interpolating the height measurement value based on the measurement values before and after the height measurement value obtained at the measurement position Y (k) is adopted. As shown in the figure, the height measurement value A (k) of the substrate surface Sa obtained corresponding to the measurement position Y (k) is actually a position shifted by ΔYa from the original position Y (k) only to the rear end side. The value obtained.

關於原本的位置Y（k）上的基板S的高度，可根據在夾持此位置的前後的位置Y（k－1）及位置Y（k）上分別取得的值A（k－1）及值A（k）來推斷。例如，通過兩測量值之間的線性內插，可推斷測量位置Y（k）上的基板高度。同樣地，關於測量膜F的高度所得的高度測量值B，可根據在原本的測量位置Y（k）的前後的位置Y（k）及位置Y（k＋1）上分別取得的值B（k）與值B（k＋1），通過內插來推斷。另外，此處將線性內插作為最簡單的例子進行了說明，但內插的方法並不限定於此，也可以是曲線近似等其他公知的方法。The height of the substrate S at the original position Y (k) can be obtained from the values A (k-1) and Y (k-1) and Y (k-1), Value A (k) to infer. For example, the substrate height at the measurement position Y (k) can be inferred by linear interpolation between the two measurement values. Similarly, the height measurement value B obtained by measuring the height of the film F can be obtained from the values B (k) obtained from the positions Y (k) and Y (k + 1) before and after the original measurement position Y (k), respectively. And the value B (k + 1) is inferred by interpolation. Although the linear interpolation is described as the simplest example here, the interpolation method is not limited to this, and other known methods such as curve approximation may be used.

根據以所述方式求出的測量位置Y（k）上的高度測量值A、高度測量值B的推斷值計算兩者的差，由此可求出此位置上的膜厚T（k）。如此，由裝置的回應時間所引起的測量位置的偏移在去路與歸路中在相反方向上產生，因此可能存在相對的偏移變大而成為測量誤差的原因的情況。尤其若提高狹縫噴嘴2的移動速度，則偏移量也變大。因此，理想的是採取利用如上所述的方法消除偏移的手段。By calculating the difference between the height measurement value A and the height measurement value B at the measurement position Y (k) obtained in the manner described above, the film thickness T (k) at this position can be obtained. As described above, the measurement position shift caused by the response time of the device is generated in the opposite direction between the return path and the return path. Therefore, the relative shift may become large and cause a measurement error. In particular, if the moving speed of the slit nozzle 2 is increased, the amount of deviation also increases. Therefore, it is desirable to adopt a method for eliminating the offset by the method described above.

在所述實施方式中，使用單一的高度感測器6，在狹縫噴嘴2的往返動作中的去路中測量基板表面Sa的高度，在歸路中測量膜F的高度，並計算同一位置上的測量結果的差，由此求出膜厚。另一方面，如以下所說明那樣，也可以在噴嘴的前後設置高度感測器，通過這些高度感測器來個別地檢測基板的高度與膜的高度。In the embodiment, a single height sensor 6 is used to measure the height of the substrate surface Sa during the return path of the slit nozzle 2 during the back-and-forth movement, and the height of the film F is measured during the return path to calculate the same position. The difference in the measurement results was obtained, and the film thickness was obtained from this. On the other hand, as described below, height sensors may be provided before and after the nozzle, and the height of the substrate and the height of the film may be individually detected by these height sensors.

圖9是表示本發明的基板處理裝置的第2實施方式的主要部分的側面圖。如圖9所示，在此實施方式中，在噴嘴支撐體51的樑構件51a的（-Y）側側面上設置有高度感測器6a，另外在（+Y）側側面上設置有高度感測器6b。所述高度感測器6a、高度感測器6b的結構及動作與第1實施方式的高度感測器6相同。另外，除此以外的結構也可以設為與第1實施方式相同，因此對與第1實施方式相同的結構標注相同的符號，並省略圖示及詳細的說明。FIG. 9 is a side view showing a main part of a second embodiment of the substrate processing apparatus of the present invention. As shown in FIG. 9, in this embodiment, a height sensor 6 a is provided on the (-Y) side surface of the beam member 51 a of the nozzle support body 51, and a height sensor is provided on the (+ Y) side surface.测 器 6b。 Tester 6b. The structures and operations of the height sensor 6a and the height sensor 6b are the same as those of the height sensor 6 of the first embodiment. In addition, other configurations may be the same as those of the first embodiment. Therefore, the same configurations as those of the first embodiment are denoted by the same reference numerals, and illustrations and detailed descriptions are omitted.

在此實施方式中，與未塗布有塗布液的基板S的表面Sa相向的高度感測器6a測量基板S的高度，另外，與形成在塗布後的基板S上的膜F的表面相向的高度感測器6b測量膜F的高度。而且，通過測量位置相同的基板高度測量值與膜高度測量值的差來求出膜厚。In this embodiment, the height sensor 6a facing the surface Sa of the substrate S not coated with the coating liquid measures the height of the substrate S and the height facing the surface of the film F formed on the coated substrate S The sensor 6b measures the height of the film F. Then, the film thickness is determined from the difference between the substrate height measurement value and the film height measurement value at the same measurement position.

在此實施方式中，也先將由高度感測器6a、高度感測器6b分別測量的高度測量值與進行了測量時的高度感測器6a、高度感測器6b的相對於基板S的位置資訊建立對應來取得，由此可通過在相同位置上取得的高度測量值彼此的運算來正確的求出此位置上的膜厚。另外，關於所求出的膜厚對應於基板S的哪個位置，也可以通過將所求出的膜厚與位置資訊建立對應來掌握。另外，在此情況下，可通過相對於基板S的狹縫噴嘴2的朝一個方向的掃描移動來測量膜厚，因此例如也可以應用於如將多個基板朝一個方向依次搬送至與噴嘴的相向位置上進行塗布的裝置、或對長條片材連續地進行塗布的裝置那樣，不將噴嘴的往返移動作為前提的成膜工序中。In this embodiment, the height measurement values measured by the height sensors 6a and 6b and the positions of the height sensors 6a and 6b relative to the substrate S when the measurement is performed are also first performed. The information is obtained in correspondence with each other. From this, the height measurement values obtained at the same position can be calculated with each other to accurately determine the film thickness at this position. It is also possible to grasp which position of the substrate S the obtained film thickness corresponds to by correlating the obtained film thickness with the position information. In addition, in this case, since the film thickness can be measured by scanning movement of the slit nozzle 2 with respect to the substrate S in one direction, it can also be applied to, for example, transporting a plurality of substrates in one direction to the nozzle In a film forming process that does not assume the reciprocating movement of a nozzle, such as an apparatus that applies coating at opposite positions or an apparatus that continuously applies coating to a long sheet.

如以上所說明那樣，在所述實施方式中，塗布裝置1作為本發明的“基板處理裝置”發揮功能，狹縫噴嘴2、噴嘴支撐體51及噴嘴移動部53分別作為本發明的“噴嘴”、“支撐部”及“移動部”發揮功能。另外，位置感測器55作為本發明的“位置檢測部”發揮功能。另外，在所述第1實施方式、第2實施方式中，高度感測器6、高度感測器6a、高度感測器6b作為本發明的“測距部”發揮功能。As described above, in the embodiment, the coating apparatus 1 functions as the "substrate processing apparatus" of the present invention, and the slit nozzle 2, the nozzle support body 51, and the nozzle moving section 53 each serve as the "nozzle" of the present invention. , "Support" and "Moving". The position sensor 55 functions as a “position detection unit” of the present invention. In the first and second embodiments, the height sensor 6, the height sensor 6a, and the height sensor 6b function as the "distance measuring unit" of the present invention.

另外，在所述實施方式中，高度測量值A相當於本發明的“第1距離”，另一方面，高度測量值B相當於本發明的“第2距離”。另外，將高度測量值A與位置資訊建立了對應的資訊（圖7（a））相當於本發明的“第1資訊”，將高度測量值B與位置資訊建立了對應的資訊（圖7（b））相當於本發明的“第2資訊”。In the embodiment, the height measurement value A corresponds to the “first distance” of the present invention, and the height measurement value B corresponds to the “second distance” of the present invention. In addition, the information corresponding to the height measurement value A and the position information (FIG. 7 (a)) corresponds to the “first information” of the present invention, and the information corresponding to the height measurement value B and the position information (FIG. 7 ( b)) corresponds to the "second information" of the present invention.

另外，本發明並不限定於所述實施方式，只要不脫離其主旨，則除所述實施方式以外可進行各種變更。例如，所述實施方式的塗布裝置1通過狹縫噴嘴2相對於固定在平臺4上基板S進行移動，而實現兩者的相對移動，但在通過基板相對於經固定的噴嘴進行移動來實現相對移動的裝置中也可以應用本發明。The present invention is not limited to the above-mentioned embodiments, and various changes can be made in addition to the above-mentioned embodiments without departing from the gist thereof. For example, in the coating apparatus 1 of the embodiment, the slit nozzle 2 is moved relative to the substrate S fixed on the platform 4 to achieve relative movement of the two, but the substrate device is moved relative to the fixed nozzle to achieve relative movement. The invention can also be applied to mobile devices.

另外，在所述實施方式中，使高度感測器6與X方向上的基板S的中央部分相向來配置，並在此位置上進行膜厚測量，但X方向上的高度感測器的配設位置並不限定於此而任意，另外，也可以在X方向上配置多個高度感測器。在此情況下，通過各個高度感測器執行所述處理，而可進行膜內的各位置上的膜厚測量。In addition, in the above-mentioned embodiment, the height sensor 6 is arranged to face the central portion of the substrate S in the X direction, and the film thickness is measured at this position. However, the arrangement of the height sensor in the X direction is The setting position is not limited to this, and a plurality of height sensors may be arranged in the X direction. In this case, the processing is performed by each height sensor, and the film thickness measurement at each position in the film can be performed.

另外，作為可用作本發明的“測距部”的光學感測器，可分別個別地檢測來自膜F的表面的反射光與透過膜F後由基板表面Sa反射的反射光者已製品化。當膜F具有充分的透光性時，通過使用此種光學感測器，可不在如上所述的針對基板上表面Sa的測量高度與針對膜F的測量高度之間進行對位，而直接測量膜厚。但是，作為形成在基板S上的膜F，並不限定於透明的膜，因此優選在安裝有此種光學感測器的裝置中也可以執行所述處理。由此，不僅是透明膜，對於不透明的膜也可以進行正確的膜厚測量。另外，為了使所測量的膜厚是基板S的哪個位置的膜厚變得明確，先將根據位置感測器55的輸出的位置資訊與膜厚測量結果建立對應也有效。In addition, as an optical sensor that can be used as the "distance measuring unit" of the present invention, it is possible to separately detect the reflected light from the surface of the film F and the reflected light reflected by the substrate surface Sa after passing through the film F. . When the film F has sufficient light transmittance, by using such an optical sensor, it is possible to directly measure without the alignment between the measurement height for the upper surface Sa of the substrate and the measurement height for the film F as described above. Film thickness. However, the film F formed on the substrate S is not limited to a transparent film. Therefore, it is preferable that the processing can be performed in a device in which such an optical sensor is mounted. This enables accurate film thickness measurement not only for transparent films but also for opaque films. In addition, in order to make it clear which position of the substrate S the measured film thickness is, it is also effective to first associate the position information based on the output of the position sensor 55 with the film thickness measurement result.

另外，在所述實施方式中，狹縫噴嘴2與高度感測器6均安裝在噴嘴支撐體51上，當狹縫噴嘴2在Y方向上移動時高度感測器6也成為一體來移動。但是，狹縫噴嘴與高度感測器也可以是通過個別的移動機構來移動的結構。當如所述實施方式那樣設為朝Y方向一體移動的結構時，不需要個別的移動機構，因此在裝置的尺寸及成本方面有利，另外，可使狹縫噴嘴與高度感測器個別地移動時可能產生的干涉的問題避免於未然。Moreover, in the said embodiment, both the slit nozzle 2 and the height sensor 6 are attached to the nozzle support body 51, and when the slit nozzle 2 moves to a Y direction, the height sensor 6 also moves integrally. However, the slit nozzle and the height sensor may be configured to be moved by separate moving mechanisms. When the structure is integrally moved in the Y direction as in the above-mentioned embodiment, a separate moving mechanism is not required, which is advantageous in terms of the size and cost of the device. In addition, the slit nozzle and the height sensor can be individually moved. The problem of possible interference from time to time is avoided beforehand.

另外，在所述實施方式中，高度感測器6安裝在噴嘴支撐體51上，不追隨狹縫噴嘴2的升降。作為替代，例如也可以是高度感測器與狹縫噴嘴一體地升降的結構。當在第1實施方式中實現所述結構時，另外需要用於修正去路與歸路中的高度感測器的垂直方向的位置的差異的處理。另一方面，在作為第2實施方式所示的結構中，兩個高度感測器（6a、6b）與狹縫噴嘴2一體地升降且兩高度感測器的位置關係不變化，因此只要事先適當地校正垂直方向的位置，則並不特別產生修正的必要性。In addition, in the above-mentioned embodiment, the height sensor 6 is mounted on the nozzle support 51 and does not follow the elevation of the slit nozzle 2. Alternatively, for example, a structure in which the height sensor and the slit nozzle are integrally raised and lowered may be used. When the structure is implemented in the first embodiment, processing for correcting the difference in the position of the height sensor in the vertical direction between the forward path and the return path is additionally required. On the other hand, in the structure shown as the second embodiment, the two height sensors (6a, 6b) and the slit nozzle 2 are raised and lowered integrally, and the positional relationship between the two height sensors does not change. Correcting the position in the vertical direction appropriately does not particularly cause the necessity of correction.

以上，如例示具體的實施方式進行了說明那樣，在本發明的基板處理裝置中，也可以是噴嘴相對於基板與移動方向平行地相對移動，且測距部與噴嘴聯動而相對於基板相對移動的結構。在此情況下，也可以進而設置支撐噴嘴及測距部並相對於基板在移動方向上相對移動的支撐部。根據此種結構，移動部只要可使測距部與噴嘴一體地移動即可，可避免移動部的結構變得複雜。另外，也不產生測距部與噴嘴個別地移動時的干涉的問題。As described above, as the specific embodiment has been described, in the substrate processing apparatus of the present invention, the nozzle may be relatively moved in parallel with the substrate in a moving direction, and the distance measuring unit may be relatively moved with respect to the substrate in association with the nozzle. Structure. In this case, a support portion that supports the nozzle and the distance measuring portion and moves relatively in the moving direction with respect to the substrate may be further provided. According to such a configuration, the moving part only needs to move the distance measuring part and the nozzle integrally, and the structure of the moving part can be avoided from becoming complicated. In addition, there is no problem of interference when the distance measuring unit and the nozzle are individually moved.

另外，測距部也可以是如下的結構：相對於塗布液的塗布前的主面相對移動並在互不相同的多個位置上測量第1距離，進而相對於塗布後的主面相對移動並在互不相同的多個位置上測量第2距離。根據此種結構，可在沿著測距部的移動方向的多個位置上分別測量膜厚，並取得此方向上的膜厚輪廓。In addition, the distance measuring unit may have a structure in which the first distance is relatively moved with respect to the main surface before the coating liquid is applied, and the first distance is measured at a plurality of positions different from each other, and further the relative movement is performed with respect to the main surface after the application and The second distance is measured at a plurality of positions different from each other. According to this configuration, the film thickness can be measured at a plurality of positions along the moving direction of the distance measuring section, and the film thickness profile in this direction can be obtained.

在此情況下，例如也能夠以如下方式構成：噴嘴從規定的移動開始位置起相對於基板在一個方向上相對移動來將塗布液塗布在主面上後，相對於基板在相反方向上相對移動至移動開始位置為止，且測距部在一個方向上配置在噴嘴的前方並相對於基板與噴嘴一體地移動，當在一個方向上移動時測量第1距離，當在相反方向上移動時測量第2距離。In this case, for example, the nozzle may be configured to move relative to the substrate in one direction from the predetermined movement start position to apply the coating liquid on the main surface, and then move relative to the substrate in the opposite direction. Up to the movement start position, the distance measuring unit is arranged in front of the nozzle in one direction and moves integrally with the nozzle relative to the substrate. The first distance is measured when moving in one direction, and the first distance is measured when moving in the opposite direction. 2 distance.

根據此種結構，可通過單一的測距部來測量第1距離與第2距離，因此可將裝置結構簡化。當將此種噴嘴的往返移動作為一連串的成膜工序中必需者而編入時，測距部與此往返移動聯動來進行測量，由此可不使成膜工序的生產性下降而進行膜厚的測量。According to this structure, the first distance and the second distance can be measured by a single distance measuring unit, so that the device structure can be simplified. When the reciprocating movement of such a nozzle is incorporated as a necessity in a series of film forming processes, the distance measurement unit performs measurement in conjunction with this reciprocating movement, thereby enabling measurement of the film thickness without reducing productivity of the film forming process. .

或者，例如也可以是如下的結構：噴嘴相對於基板在一個方向上相對移動來將塗布液塗布在主面上，且在一個方向上夾持噴嘴而配置一對測距部，在一個方向上配置在噴嘴的前方的測距部測量第1距離，配置在噴嘴的後方的測距部測量第2距離。根據此種結構，在噴嘴的前後分別測量第1距離與第2距離，因此不需要用於膜厚測量的往返移動。在將相對於基板的噴嘴的相對移動限定成一個方向的裝置中，利用此結構的膜厚測量有效。Alternatively, for example, a configuration may be adopted in which the nozzle is relatively moved with respect to the substrate in one direction to apply the coating liquid on the main surface, and the pair of distance measuring portions are arranged while holding the nozzle in one direction, and in one direction The distance measuring unit arranged in front of the nozzle measures the first distance, and the distance measuring unit arranged in the rear of the nozzle measures the second distance. According to this structure, since the first distance and the second distance are measured before and after the nozzle, respectively, a back-and-forth movement for film thickness measurement is not required. In a device that restricts the relative movement of the nozzle relative to the substrate to one direction, the film thickness measurement using this structure is effective.

另外，例如膜厚算出部也能夠以對由利用位置檢測部的位置檢測與利用測距部的距離測量之間的回應時間所引起的位置偏移進行修正的方式構成。根據此種結構，可對應於第1距離與第2距離的測量位置因裝置的回應時間而偏移這一問題，正確地求出膜厚。In addition, for example, the film thickness calculation unit may be configured to correct a positional shift caused by a response time between the position detection by the position detection unit and the distance measurement by the distance measurement unit. According to this configuration, it is possible to accurately determine the film thickness in response to the problem that the measurement positions of the first distance and the second distance are shifted due to the response time of the device.

另外，例如測距部也可以是具有朝被測定面照射光的投光部、及檢測來自被測定面的反射光的光接收部的結構。作為如所述那樣以光學方式檢測與被測定面的距離的感測器製品，可到手對應於各種測量距離及解析度的製品。從這些製品中，對應於測量的目的而選擇具有適宜的特性者，由此可容易地實現以所需的精度測量膜厚。 [產業上的可利用性]In addition, for example, the distance measuring unit may have a configuration including a light projecting unit that irradiates light toward the surface to be measured, and a light receiving unit that detects reflected light from the surface to be measured. As described above, as a sensor product that optically detects a distance from a surface to be measured, a product corresponding to various measurement distances and resolutions is available at hand. From these products, those having suitable characteristics are selected in accordance with the purpose of the measurement, and thus it is possible to easily realize the measurement of the film thickness with the required accuracy. [Industrial availability]

本發明是對將塗布液塗布在基板上所形成的膜厚進行測量時有效者，尤其作為被編入成膜工序中的線上型的膜厚測量有效地發揮功能。The present invention is effective when measuring a film thickness formed by applying a coating liquid on a substrate, and particularly functions effectively as an in-line film thickness measurement incorporated in a film forming step.

1‧‧‧塗布裝置（基板處理裝置）1‧‧‧ Coating equipment (substrate processing equipment)

2‧‧‧狹縫噴嘴（噴嘴）2‧‧‧ Slot Nozzle (Nozzle)

4‧‧‧平臺4‧‧‧ platform

5‧‧‧塗布處理部5‧‧‧ Coating treatment department

6‧‧‧高度感測器（測距部）（光學感測器）6‧‧‧height sensor (ranging section) (optical sensor)

6a、6b‧‧‧高度感測器（測距部）6a, 6b‧‧‧‧ Height sensor (ranging section)

8‧‧‧控制部8‧‧‧Control Department

21‧‧‧噴出口21‧‧‧ spout

22‧‧‧噴嘴升降機構22‧‧‧Nozzle lifting mechanism

25‧‧‧塗布液供給部25‧‧‧ Coating liquid supply department

41‧‧‧保持面（平臺4的上表面）41‧‧‧ holding surface (upper surface of platform 4)

42‧‧‧吸附控制部42‧‧‧Adsorption Control Department

51‧‧‧噴嘴支撐體（支撐部）51‧‧‧ Nozzle support (supporting part)

51a‧‧‧樑構件51a‧‧‧Beam member

51b‧‧‧柱構件(升降機構)51b‧‧‧post member (lifting mechanism)

52‧‧‧導軌52‧‧‧rail

53‧‧‧噴嘴移動部（移動部）53‧‧‧ Nozzle moving section (moving section)

54‧‧‧線性馬達54‧‧‧ Linear Motor

54a‧‧‧定子54a‧‧‧stator

54b‧‧‧動子54b‧‧‧ mover

55‧‧‧位置感測器（位置檢測部）55‧‧‧ Position Sensor (Position Detection Section)

55a‧‧‧尺規部55a‧‧‧Ruler Department

55b‧‧‧檢測部55b‧‧‧Testing Department

61‧‧‧投光部61‧‧‧Projection Department

62‧‧‧驅動器62‧‧‧Driver

63‧‧‧光接收部63‧‧‧Light receiving department

64‧‧‧信號處理部64‧‧‧Signal Processing Department

81‧‧‧CPU（資訊取得部、膜厚算出部）81‧‧‧CPU (information acquisition section, film thickness calculation section)

82‧‧‧記憶體82‧‧‧Memory

83‧‧‧記憶體83‧‧‧Memory

84‧‧‧介面84‧‧‧ interface

811‧‧‧資訊取得部811‧‧‧ Information Acquisition Department

812‧‧‧膜厚算出部812‧‧‧film thickness calculation unit

A、A（k）、A（k－1）、A（k＋1）、B、B（k）、B（k－1）、B（k＋1）‧‧‧高度測量值A, A (k), A (k-1), A (k + 1), B, B (k), B (k-1), B (k + 1) ‧‧‧ altitude measurement

F‧‧‧膜F‧‧‧ film

L‧‧‧光束L‧‧‧ Beam

S‧‧‧基板S‧‧‧ substrate

Sa‧‧‧基板S的上表面（基板主面）（基板S的表面）Sa‧‧‧ Upper surface of substrate S (main surface of substrate)

T‧‧‧測量物件物T‧‧‧ measuring object

T（k）‧‧‧膜厚T （k） ‧‧‧film thickness

ΔT‧‧‧時間延遲（時間差、偏移量）ΔT‧‧‧ time delay (time difference, offset)

Y（k）、Y（k－1）、Y（k＋1）‧‧‧測量位置Y (k), Y (k-1), Y (k + 1) ‧‧‧Measurement position

ΔYa、ΔYb‧‧‧位移量（偏移量）ΔYa, ΔYb‧‧‧Displacement (offset)

S101～S115‧‧‧步驟S101 ～ S115‧‧‧step

圖1是表示作為本發明的基板處理裝置的第1實施方式的塗布裝置的立體圖。 圖2是表示此塗布裝置的主要結構與其動作的概要的側面圖。 圖3是表示高度感測器的結構的圖。 圖4是表示此塗布裝置的控制部的電氣結構的方塊圖。 圖5（a）至圖5（e）是表示此塗布裝置的塗布動作的圖。 圖6是表示此塗布裝置的動作的流程圖。 圖7（a）至圖7（c）是表示膜厚算出的原理的圖。 圖8（a）至圖8（c）是說明對於回應時間的應對的原理的圖。 圖9是表示本發明的基板處理裝置的第2實施方式的主要部分的側面圖。FIG. 1 is a perspective view showing a coating apparatus as a first embodiment of a substrate processing apparatus of the present invention. FIG. 2 is a side view showing an outline of a main structure and an operation of the coating apparatus. FIG. 3 is a diagram showing a configuration of a height sensor. FIG. 4 is a block diagram showing an electrical configuration of a control unit of the coating apparatus. 5 (a) to 5 (e) are diagrams showing a coating operation of the coating apparatus. FIG. 6 is a flowchart showing the operation of the coating apparatus. 7 (a) to 7 (c) are diagrams showing the principle of film thickness calculation. 8 (a) to 8 (c) are diagrams illustrating the principle of response to response time. FIG. 9 is a side view showing a main part of a second embodiment of the substrate processing apparatus of the present invention.

Claims (9)

一種基板處理裝置，其是在基板的主面上形成塗布液的膜的基板處理裝置，其包括： 噴嘴，一面從狹縫狀的噴出口噴出所述塗布液，一面相對於所述基板相對移動來將所述塗布液塗布在所述主面上而形成所述膜； 測距部，面對所述主面來配置，測量至所述主面為止的第1距離及至塗布在所述主面上的所述膜的表面為止的第2距離； 移動部，使所述基板與所述測距部在沿著所述主面的移動方向上相對移動； 位置檢測部，在所述移動方向上，檢測相對於所述基板的所述測距部的位置； 資訊取得部，取得將所述位置檢測部所檢測的所述測距部的位置與所述測距部在所述位置上所測量的所述第1距離建立了對應的第1資訊、及將所述位置檢測部所檢測的所述測距部的位置與所述測距部在所述位置上所測量的所述第2距離建立了對應的第2資訊；以及 膜厚算出部，基於所述第1資訊及所述第2資訊，根據相對於所述基板的所述測距部的位置彼此相同時的所述第1距離與所述第2距離的差來算出對應於所述位置的所述膜的厚度。A substrate processing apparatus is a substrate processing apparatus that forms a film of a coating liquid on a main surface of a substrate. The substrate processing device includes: a nozzle that ejects the coating liquid from a slit-shaped ejection port and moves relative to the substrate. Coating the coating solution on the main surface to form the film; a distance measuring unit is disposed facing the main surface, and measures a first distance to the main surface and to apply the coating liquid to the main surface; A second distance up to the surface of the film; a moving unit that moves the substrate and the distance measuring unit relative to each other in a moving direction along the main surface; a position detecting unit in the moving direction To detect the position of the distance measuring unit relative to the substrate; the information obtaining unit obtains the position of the distance measuring unit detected by the position detecting unit and the distance measuring unit at the position. The first information corresponding to the first distance is established, and the position of the distance measuring unit detected by the position detection unit and the second distance measured by the distance measuring unit at the position are determined. Corresponding second information; and film thickness calculation section Based on the first information and the second information, a correspondence corresponding to the first distance and the second distance is calculated based on a difference between the first distance and the second distance when the positions of the distance measuring portions with respect to the substrate are the same as each other. Position of the film. 如申請專利範圍第1項所述的基板處理裝置，其中所述噴嘴相對於所述基板而與所述移動方向平行地相對移動，且 所述測距部與所述噴嘴聯動而相對於所述基板相對移動。The substrate processing apparatus according to item 1 of the scope of patent application, wherein the nozzle is relatively moved in parallel with the moving direction with respect to the substrate, and the distance measuring unit is linked with the nozzle to be relatively with respect to the nozzle. The substrate moves relatively. 如申請專利範圍第2項所述的基板處理裝置，其包括支撐部，支撐所述噴嘴及所述測距部，並相對於所述基板在所述移動方向上相對移動。The substrate processing apparatus according to item 2 of the scope of patent application, comprising a support portion that supports the nozzle and the distance measuring portion, and moves relatively in the moving direction relative to the substrate. 如申請專利範圍第1項至第3項中任一項所述的基板處理裝置，其中所述測距部相對於所述塗布液的塗布前的所述主面相對移動並在互不相同的多個位置上測量所述第1距離，進而相對於塗布後的所述主面相對移動並在互不相同的多個位置上測量所述第2距離。The substrate processing apparatus according to any one of claims 1 to 3, wherein the distance measuring section is relatively moved relative to the main surface before the application of the coating liquid and is different from each other. The first distance is measured at a plurality of positions, and is further moved relative to the main surface after coating, and the second distance is measured at a plurality of positions different from each other. 如申請專利範圍第4項所述的基板處理裝置，其中所述噴嘴從規定的移動開始位置起相對於所述基板在一個方向上相對移動來將所述塗布液塗布在所述主面上後，相對於所述基板在與所述一個方向相反方向上相對移動至所述移動開始位置為止，且 所述測距部在所述一個方向上配置在所述噴嘴的前方並相對於所述基板與所述噴嘴一體地移動，當在所述一個方向上移動時測量所述第1距離，當在所述相反方向上移動時測量所述第2距離。The substrate processing apparatus according to item 4 of the scope of patent application, wherein the nozzle is relatively moved in one direction relative to the substrate from a predetermined movement start position to apply the coating liquid to the main surface Relative to the substrate in a direction opposite to the one direction up to the movement start position, and the distance measuring unit is disposed in front of the nozzle in the one direction and relative to the substrate Moving integrally with the nozzle, the first distance is measured when moving in the one direction, and the second distance is measured when moving in the opposite direction. 如申請專利範圍第1項至第3項中任一項所述的基板處理裝置，其中所述噴嘴相對於所述基板在一個方向上相對移動來將所述塗布液塗布在所述主面上，且 在所述一個方向上夾持所述噴嘴而配置一對所述測距部，在所述一個方向上配置在所述噴嘴的前方的所述測距部測量所述第1距離，配置在所述噴嘴的後方的所述測距部測量所述第2距離。The substrate processing apparatus according to any one of claims 1 to 3, wherein the nozzle is relatively moved in one direction relative to the substrate to apply the coating liquid on the main surface And a pair of the distance measuring portions are disposed while holding the nozzle in the one direction, and the distance measuring portion disposed in front of the nozzle in the one direction measures the first distance and is disposed The second distance is measured by the distance measuring unit behind the nozzle. 如申請專利範圍第1項至第3項中任一項所述的基板處理裝置，其中所述膜厚算出部對由利用所述位置檢測部的位置檢測與利用所述測距部的距離測量之間的回應時間所引起的位置偏移進行修正。The substrate processing apparatus according to any one of claims 1 to 3, wherein the film thickness calculation unit measures the distance between the position detection unit using the position detection unit and the distance measurement unit using the distance measuring unit. The position shift caused by the response time is corrected. 如申請專利範圍第1項至第3項中任一項所述的基板處理裝置，其中所述測距部包括朝被測定面照射光的投光部、及檢測來自所述被測定面的反射光的光接收部。The substrate processing apparatus according to any one of claims 1 to 3, wherein the distance measuring unit includes a light projecting unit that irradiates light toward the measured surface, and detects reflection from the measured surface. Light receiving part of light. 一種基板處理方法，其是使從狹縫狀的噴出口中噴出塗布液的噴嘴相對於基板相對移動，而將所述塗布液塗布在所述基板的主面上來形成所述塗布液的膜的基板處理方法，其包括： 使面對所述主面來配置的測距部相對於所述基板在沿著所述主面的移動方向上相對移動，通過位置檢測部來檢測所述移動方向上的相對於所述基板的所述測距部的位置，並且所述測距部測量至所述主面為止的第1距離及至塗布在所述主面上的所述膜的表面為止的第2距離， 取得將所述位置檢測部所檢測的所述測距部的位置與所述測距部在所述位置上所測量的所述第1距離建立了對應的第1資訊、及將所述位置檢測部所檢測的所述測距部的位置與所述測距部在所述位置上所測量的所述第2距離建立了對應的第2資訊，且 基於所述第1資訊及所述第2資訊，根據相對於所述基板的所述測距部的位置彼此相同時的所述第1距離與所述第2距離的差來算出對應於所述位置的所述膜的厚度。A substrate processing method is a substrate in which a nozzle for ejecting a coating liquid from a slit-shaped discharge port is relatively moved relative to a substrate, and the coating liquid is coated on a main surface of the substrate to form a film of the coating liquid. The processing method includes: moving a distance-measuring portion arranged facing the main surface relative to the substrate in a moving direction along the main surface, and detecting a position in the moving direction by a position detecting unit. A position of the distance measuring unit with respect to the substrate, and the distance measuring unit measures a first distance to the main surface and a second distance to a surface of the film coated on the main surface Obtaining first information corresponding to the position of the distance measuring unit detected by the position detecting unit and the first distance measured by the distance measuring unit at the position, and obtaining the position The second information corresponding to the position of the distance measuring unit detected by the detection unit and the second distance measured by the distance measuring unit at the position is based on the first information and the first information. 2 information, according to the relative to the substrate Position from a difference between the portions to each other while the first distance and the second distance calculated thickness of the film corresponding to the position.
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