1268808 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種細縫式塗佈製程，且特別是有關 於一種細縫式塗佈製程的膜厚即時監控方法及其裝置。 【先前技術】 液晶顯示器製造技術的進步，尤其大尺寸的趨勢，使 得原本真空管顯示器的應用領域，大多可被液晶顯示器所 取代。液晶顯示器的相關產業成為近年來的當紅炸子雞。 液晶顯示器的製作過程中，微影製程（Lith〇graphy)是其 中-系列重要的製程之…微影製程藉由塗佈光阻、顯影、 曝光等步驟，圖案化液晶顯示器中的膜層。在***面板 前’塗佈光阻一般採用旋塗方式（Spin c〇ating)塗佈。從第 五代面板開始’因為面板尺寸過大，一般採用細縫式塗佈 法。光阻層厚度的㈣與否關係著後續製程的良率。在大 尺寸的面板上控制光阻層均勻厚度，考驗著液晶顯示器相 關製造商的技術能力。 各知細縫式塗佈法，在製程中無法知道 -π # τ热忒知暹塗佈之膜厚或 膜層是否均句的情形。當製程後檢測時才知道上述的膜尸 ^膜層是否均勻，往往已造成製程中的產品需要重新^ '私或報廢。為了解決上述問題，液晶顯示 莫不積極提出創新的方法，以面對細縫式塗佈法的=商 【發明内容】 種細縫式塗佈製程的 因此本發明的目的就是在提供一 1268808 m厚監控M及其裝4 ’用以制塗佈之膜厚。 根據本發明之上述目的，提出一種細縫式塗佈製程的 膜厚監控方法，適料㈣㈣及調整塗佈之膜厚。藉由 光學，測轉射並接收光學⑽，_塗佈制—基材表 面藉由光學感測器發射並接收光學訊號，檢測塗佈後的 基材表面之塗層。藉由光學訊號處理器比對塗佈前及塗佈 後的光予訊號，藉以連續計算出該塗層厚度。回授塗層之 尽度，藉以即時控制塗層之厚度。 由上述可知，應用本發明之細縫式塗佈製程的膜厚即 時監控方法及其裝置，藉由光學感測器即時量測膜厚，並 即時控制膜厚及其均勻度。 【實施方式】 為了解決細縫式塗佈製程中無法知道塗佈之膜厚或膜 層疋否均勻的情形，本發明提出一種細縫式塗佈製程的膜 尽即時監控方法及其裝置。此膜厚即時監控方法及其裝 置’在塗佈前和塗佈後，利用光學感測器檢測塗層膜厚。 回授塗層之厚度給噴嘴控制裝置，藉以即時控制塗層之厚 度。 請參照第1圖，其繪示依照本發明一較佳實施例的一 種、、、田縫式塗佈裝置的示意圖。本實施例之細縫式塗佈裝置 100係適用於塗佈大面積塗層1〇6於基材1〇4上。此細縫式 塗佈裳置100藉由兩組光學感測器110於塗佈前及塗佈 後’分別檢測基材表面1〇4及基材表面之塗層1〇6。檢測方 式係以光發射器ll〇a射出光學訊號112a，並以光接收器 1268808 nob接收經基材104或塗層1〇6反射之光學訊號丄丨化。光 訊號處理裝置120，利用兩組光學感測器11〇所量得的訊 號，分別計算出感測器與基材1G4或塗層1G6之間的兩個 距離，兩個距離的之間差異即是塗佈之臈厚。噴嘴控制裝 置130湘所量得之㈣膜厚，即時調整或變更製程參數 以控制膜厚。上述兩組光學感測g UG分別與光訊號處理 裝置120電性連接’而噴嘴控制裝置13〇分別與光訊號處 理裝置120及細縫式塗佈喷嘴114電性連接。 请參照第1圖及第3圖，其中第3圖係繪示依照本發 明-較佳實施例的—種細縫式塗佈製程的膜厚即時監控方 法之流程圖。在步驟则巾，於塗料藉由—組光學感測 器（光發射器11Ga及光接„騰)發射並接受光學城， 經光訊號處理裝置12G計算出光學㈣器m與基材1〇4 間的距離。在步驟302巾，於塗佈前藉由一組光學感測器 110(光發射II 110a及光純器11Gb)發射並接受光學訊 號’經光訊號處理裝置12〇計算出光學感測$ ιι〇與塗層 1二間的距離。在步驟304中’光訊號處理裂置12〇比= 佈岫和塗佈後，光學感測器110與塗層106間距離的差異， 即可4开出塗;| 1G6之膜厚。在步驟3Q6巾，喷嘴控制裝 置130’接收光訊號處理裝置12〇所回授之塗層1〇6膜厚: 藉以調整或變更製程參數。細縫式塗佈製程的膜厚的可為 喷嘴移動速度、噴嘴與基板之間距d或光阻吐出量之製程 參數所控制。 請參照第2圖，其緣示依照本發明另一較佳實施例的 -種真空鑛膜裂置的示意圖。此真空鍍膜裝置在真空腔細 1268808 的兩側分別設計了光發射器110a及光接收器ii〇b，並藉由 光發射器110a射出光學訊號112a，並以光接收器ii〇b接 收經薄膜2〇4反射之光學訊號112b。光訊號處理裝置220， 利用光發射器110a及光接收器110b所量得的訊號，持續 叶算出感測器與薄膜204之間的距離。當薄膜204的膜厚 到達預定厚度時，感測器與薄膜204之間的距離係一定值。 因此，製程控制裝置230可以用上述之定值或直接計算出 膜厚，來決定鍍膜製程的終點，而不是單純的利用時間控 制薄膜204的膜厚。上述光訊號處理裝置22〇係分別與光 ^射器110a及光接收器11 〇b電性連接，而製程控制裝置 23〇隹別與光訊號處理裝置220及真空腔2〇〇電性連接。為 了避商鍍膜過程中，真空腔内的粒子可能沉積在光發射器 ll〇a及光接收器ii〇b上，設計了遮蔽裝置2〇以及2〇訃， 藉以供光發射器110a及光接收器110b可以固定在其内。 參照第2圖及第4圖，其中第4圖係描述依照本發明 另一較佳實施例的一種真空鍍膜製程的膜厚即時監控方法 之流程圖。在步驟400中，光發射器u〇a u2a，朝向薄膜2〇4。在步驟中，光接收器二 經薄膜204反射的光學訊號112b。在步驟4〇4中，光訊號 處理裝置220處理光學訊號112a和光學訊號mb，藉^ 續計算出鍵膜厚度或定義出鐘膜厚度和感測器與薄膜2〇4 之間的距離的關係。在步驟傷+，製程控制裝置23〇接 收光訊號處理裝置22G所回授之薄膜2()4之膜厚，合薄膜 204的膜厚到達預定厚度時，即時終止製程。上述的;法適 用於各種成膜裝置，例如各顧膜設備⑽鑛、蒸鐘、電鑛) 1268808 及各種塗膜設備（噴印、滾筒式塗佈、旋轉塗佈、擠 佈）。 八塗 由上述本發明較佳實施例可知，應用本發明之 塗佈製程的膜厚即時監控方法及其袈置，藉由光學感:二 即時量測膜厚，並即時控制膜厚及其均勻度。 ^ 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限寒本發明，任何熟習此技藝者，在不脫離本發明之精 神和耗圍内，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 能更明顯易懂，所附圖式之詳細說明如下： 、第1圖係繪不依照本發明一較佳實施例的一種細縫式 塗佈裝置的示意圖； 第2圖係繪示依照本發明另一較佳實施例的一種真空 鍍膜裝置的示意圖； 第3圖係繪示依照本發明一較佳實施例的一種細縫式 塗佈製程的膜厚即時監控方法之流程圖；以及 第4圖係繪示依照本發明另一較佳實施例的一種真空 鍍膜製程的膜厚即時監控方法之流程圖。 【主要元件符號說明】 100 :細縫式塗佈裝置 1G2 _·基座 114 :細縫式塗佈喷嘴 114a :噴嘴開口 1268808 104 :基材 106 :塗層 110 :光學感測器 110a :光發射器 ll〇b ·•光接收器 112a/112b ··光學訊號 d ··喷嘴與基材間距 120/220 :訊號處理裝置 130/230 ··噴嘴控制裝置 200 :真空腔 202 :基材 204 ··薄膜1268808 IX. Description of the Invention: [Technical Field] The present invention relates to a slit coating process, and more particularly to a film thickness monitoring method and apparatus relating to a slit coating process. [Prior Art] Advances in the manufacturing technology of liquid crystal displays, especially the trend of large size, have made the application fields of the original vacuum tube displays mostly replaced by liquid crystal displays. The related industry of liquid crystal displays has become a popular fried chicken in recent years. In the production process of liquid crystal display, Lith〇graphy is an important process in the middle-series... The lithography process patterns the film in the liquid crystal display by coating photoresist, development, exposure and the like. Coating photoresists in the front panel of the fourth generation are typically applied by spin coating. Starting from the fifth-generation panel, because the panel size is too large, the slit coating method is generally used. The thickness of the photoresist layer (four) is related to the yield of the subsequent process. Controlling the uniform thickness of the photoresist layer on a large-sized panel tests the technical capabilities of the relevant manufacturer of the liquid crystal display. In the detailed slit coating method, it is not known in the process that -π # τ 忒 忒 暹 暹 暹 暹 暹 暹 暹 暹 暹 暹 暹 暹 暹 暹 暹 暹 暹 暹 暹 暹 暹 暹 暹 暹 暹When the process is detected after the process, it is known whether the film layer is uniform or not, and the product in the process has often been required to be re-private or scrapped. In order to solve the above problems, the liquid crystal display does not actively propose an innovative method to face the fine slit coating method, and thus the purpose of the present invention is to provide a thickness of 1,268,808 m. Monitor M and its mounting 4' film thickness for coating. In accordance with the above object of the present invention, a film thickness monitoring method for a slit coating process is proposed, which is adapted to (4) (4) and adjust the film thickness of the coating. The coating of the surface of the coated substrate is detected by optical, transducing and receiving optics (10), which are coated by an optical sensor and received by an optical signal. The thickness of the coating is continuously calculated by comparing the pre- and post-coating optical signals by an optical signal processor. The thickness of the coating is controlled by the feedback of the coating. As apparent from the above, the film thickness monitoring method and apparatus for the slit coating process of the present invention can measure the film thickness instantaneously by the optical sensor, and instantly control the film thickness and uniformity thereof. [Embodiment] In order to solve the problem that the film thickness of the coating or the uniformity of the film layer is not known in the slit coating process, the present invention proposes a film monitoring method and apparatus thereof for the slit coating process. This film thickness monitoring method and apparatus 'are used to detect the coating film thickness before and after coating using an optical sensor. The thickness of the coating is applied to the nozzle control device to instantly control the thickness of the coating. Referring to FIG. 1 , a schematic view of a seam coating apparatus according to a preferred embodiment of the present invention is shown. The slit coating apparatus 100 of the present embodiment is suitable for coating a large-area coating 1〇6 on the substrate 1〇4. The slit coating coating 100 is used to detect the surface of the substrate 1 and 4 and the surface of the substrate 1 to 6 before and after coating by the two sets of optical sensors 110, respectively. The detecting method emits the optical signal 112a by the light emitter 11a, and receives the optical signal reflected by the substrate 104 or the coating 1〇6 by the light receiver 1268808 nob. The optical signal processing device 120 calculates the two distances between the sensor and the substrate 1G4 or the coating 1G6 by using the signals measured by the two sets of optical sensors 11 , and the difference between the two distances is It is thick and thick. The nozzle control device 130 measures the film thickness and adjusts or changes the process parameters to control the film thickness. The two sets of optical sensing g UG are electrically connected to the optical signal processing device 120 respectively, and the nozzle control device 13 is electrically connected to the optical signal processing device 120 and the slit coating nozzle 114, respectively. Referring to Figures 1 and 3, FIG. 3 is a flow chart showing a method for monitoring the film thickness of a slit coating process in accordance with the preferred embodiment of the present invention. In the step, the coating is emitted by the optical sensor (light emitter 11Ga and optical connection) and received by the optical city, and the optical device (4) m and the substrate 1〇4 are calculated by the optical signal processing device 12G. In the step 302, before the coating, a set of optical sensors 110 (light emission II 110a and optical puree 11Gb) are emitted and receive optical signals 'optical signal processing device 12' to calculate optical sensing. The distance between the distance between the optical sensor 110 and the coating 106 is as follows: Opening the coating; | 1G6 film thickness. In step 3Q6, the nozzle control device 130' receives the coating 1 〇 6 film thickness of the optical signal processing device 12: to adjust or change the process parameters. The film thickness of the cloth process can be controlled by the process parameters of the nozzle moving speed, the distance between the nozzle and the substrate d, or the amount of photoresist discharge. Referring to FIG. 2, the edge of the film according to another preferred embodiment of the present invention Schematic diagram of vacuum mineral film cracking. This vacuum coating device is in the vacuum chamber fine 1268808 The light emitter 110a and the light receiver ii〇b are respectively designed, and the optical signal 112a is emitted by the light emitter 110a, and the optical signal 112b reflected by the film 2〇4 is received by the light receiver 〇 〇b. The optical signal processing The device 220 calculates the distance between the sensor and the film 204 by using the signal measured by the light emitter 110a and the light receiver 110b. When the film thickness of the film 204 reaches a predetermined thickness, the sensor and the film 204 The distance between the two is a certain value. Therefore, the process control device 230 can determine the end point of the coating process by using the above-mentioned constant value or directly calculating the film thickness, instead of simply using the film thickness of the time control film 204. The processing device 22 is electrically connected to the optical transmitter 110a and the optical receiver 11b, respectively, and the process control device 23 is electrically connected to the optical processing device 220 and the vacuum chamber 2. During the coating process, particles in the vacuum chamber may be deposited on the light emitter 11a and the light receiver ii〇b, and the shielding devices 2〇 and 2〇讣 are designed, so that the light emitter 110a and the light receiver 110b can be fixed at Referring to Figures 2 and 4, wherein FIG. 4 is a flow chart showing a method for instantly monitoring the film thickness of a vacuum coating process in accordance with another preferred embodiment of the present invention. In step 400, the light emitter U〇a u2a, facing the film 2〇4. In the step, the optical receiver is optical signal 112b reflected by the film 204. In step 4〇4, the optical signal processing device 220 processes the optical signal 112a and the optical signal mb, ^ Continue to calculate the thickness of the bond film or define the relationship between the thickness of the film and the distance between the sensor and the film 2〇4. In the step of the injury +, the process control device 23 receives the film fed back by the optical signal processing device 22G. When the film thickness of 2()4 is reached and the film thickness of the film 204 reaches a predetermined thickness, the process is immediately terminated. The above method is applicable to various film forming apparatuses, such as various film processing equipment (10) ore, steam clock, electric ore) 1268808 and various coating equipment (printing, drum coating, spin coating, extrusion). According to the preferred embodiment of the present invention, the film thickness monitoring method and the device for applying the coating process of the present invention can measure the film thickness by instantaneous measurement, and control the film thickness and uniformity in real time. degree. Although the present invention has been disclosed in a preferred embodiment as above, it is not intended to limit the invention, and any skilled person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a schematic view showing a vacuum coating apparatus according to another preferred embodiment of the present invention; FIG. 3 is a view showing a preferred embodiment of the present invention. A flow chart of a film thickness monitoring method for a slit coating process; and FIG. 4 is a flow chart showing a film thickness monitoring method for a vacuum coating process according to another preferred embodiment of the present invention. [Description of main component symbols] 100: Slot coating apparatus 1G2 _· pedestal 114: slit coating nozzle 114a: nozzle opening 1268808 104: substrate 106: coating 110: optical sensor 110a: light emission 〇 〇b ·•Optical Receiver 112a/112b ··Optical Signal d ··Nozzle-Substrate Distance 120/220: Signal Processing Device 130/230 ··Nozzle Control Device 200: Vacuum Cavity 202: Substrate 204 ·· film
1111