TW201936864A - Adhesive composition, filmy adhesive, adhesive sheet, and production method for semiconductor device - Google Patents

Adhesive composition, filmy adhesive, adhesive sheet, and production method for semiconductor device Download PDF

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TW201936864A
TW201936864A TW108103150A TW108103150A TW201936864A TW 201936864 A TW201936864 A TW 201936864A TW 108103150 A TW108103150 A TW 108103150A TW 108103150 A TW108103150 A TW 108103150A TW 201936864 A TW201936864 A TW 201936864A
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adhesive
film
component
adhesive composition
substrate
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TW108103150A
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TWI804569B (en
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橋本慎太郎
中村祐樹
山崎智陽
菊地健太
舛野大輔
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日商日立化成股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
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    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08—Macromolecular additives
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    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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    • C09J7/00—Adhesives in the form of films or foils
    • C—CHEMISTRY; METALLURGY
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • H—ELECTRICITY
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L24/46—Structure, shape, material or disposition of the wire connectors prior to the connecting process of a plurality of wire connectors
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
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  • Engineering & Computer Science (AREA)
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  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
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  • Dicing (AREA)

Abstract

Disclosed is an adhesive composition which comprises one or more thermosetting resins, a hardener, and an elastomer, wherein the thermosetting resins comprise an epoxy resin having an alicyclic ring. Also disclosed is a filmy adhesive obtained from such adhesive composition. Also provided are an adhesive sheet comprising such filmy adhesive and a production method for a semiconductor device.

Description

接著劑組成物、膜狀接著劑、接著片及半導體裝置的製造方法Substrate composition, film adhesive, adhesive sheet, and method of manufacturing semiconductor device

本發明是有關於一種接著劑組成物、膜狀接著劑、接著片及半導體裝置的製造方法。The present invention relates to an adhesive composition, a film-like adhesive, an adhesive sheet, and a method of producing a semiconductor device.

先前，於半導體晶片與用以搭載半導體晶片的支撐構件的接合中，主要使用銀糊。但是，隨著近年來半導體晶片的小型化·積體化，對於所使用的支撐構件亦開始要求小型化、細密化。另一方面，於使用銀糊的情況下，有時會出現起因於糊的露出或半導體晶片的斜度的於打線接合（wire bonding）時產生的不良、膜厚控制困難、產生空隙等問題。Previously, in the bonding of a semiconductor wafer and a supporting member for mounting a semiconductor wafer, a silver paste was mainly used. However, with the recent reduction in size and integration of semiconductor wafers, the use of the support members has also been demanded to be smaller and finer. On the other hand, in the case of using a silver paste, there are problems such as defects caused by wire bonding during the exposure of the paste or the inclination of the semiconductor wafer, difficulty in film thickness control, and generation of voids.

因此，近年來一直使用用以接合半導體晶片與支撐構件的膜狀接著劑（例如參照專利文獻1）。於使用包括切割帶（dicing tape）及積層於切割帶上的膜狀接著劑的接著片的情況下，藉由於半導體晶圓的背面貼附膜狀接著劑，並藉由切割來使半導體晶圓單片化，而可獲得帶有膜狀接著劑的半導體晶片。所獲得的帶有膜狀接著劑的半導體晶片可經由膜狀接著劑而貼附於支撐構件，並藉由熱壓接而接合。
[現有技術文獻]
[專利文獻]Therefore, in recent years, a film-like adhesive for bonding a semiconductor wafer and a support member has been used (for example, refer to Patent Document 1). In the case of using a dicing adhesive comprising a dicing tape and a film-like adhesive laminated on the dicing tape, the semiconductor wafer is bonded by a film-like adhesive on the back side of the semiconductor wafer and by dicing By singulation, a semiconductor wafer with a film-like adhesive can be obtained. The obtained semiconductor wafer with a film-like adhesive can be attached to the support member via a film-like adhesive and joined by thermocompression bonding.
[Prior Art Literature]
[Patent Literature]

專利文獻1：日本專利特開2007-053240號公報Patent Document 1: Japanese Patent Laid-Open Publication No. 2007-053240

然而，隨著半導體晶片的尺寸變小，而於熱壓接時施加至每單位面積的力變大，有時會產生膜狀接著劑自半導體晶片露出的被稱為滲出（bleed）的現象。However, as the size of the semiconductor wafer becomes smaller, the force applied to each unit area at the time of thermocompression bonding becomes large, and a phenomenon called bleed which is exposed from the semiconductor wafer by the film-like adhesive may occur.

另外，於將膜狀接著劑用作作為導線埋入型膜狀接著劑的導線上膜（Film Over Wire，FOW）或作為半導體晶片埋入型膜狀接著劑的晶片上膜（Film Over Die，FOD）的情況下，就提升埋入性的觀點而言，於熱壓接時要求流動性高。因此，有滲出的發生頻率及量進一步增大的傾向。視情況而有時會滲出至半導體晶片上表面，由此而有導致電氣不良或打線接合不良之虞。Further, a film-like adhesive is used as a film over-film (FOW) as a wire-embedded film-like adhesive or a wafer-on-film (Film Over Die, which is a semiconductor wafer-embedded film-like adhesive). In the case of FOD), from the viewpoint of improving the embedding property, fluidity is required at the time of thermocompression bonding. Therefore, there is a tendency that the frequency and amount of oozing increase further. Depending on the case, it may ooze out to the upper surface of the semiconductor wafer, which may cause electrical defects or poor wire bonding.

本發明是鑒於此種情況而成，主要目的在於提供一種於熱壓接時具有良好的埋入性，並且能夠抑制滲出的接著劑組成物。The present invention has been made in view of such circumstances, and a main object thereof is to provide an adhesive composition which has good embedding property at the time of thermocompression bonding and can suppress bleeding.

本發明的一方面提供一種接著劑組成物，其含有熱硬化性樹脂、硬化劑及彈性體，且熱硬化性樹脂包含具有脂環式環的環氧樹脂。根據此種接著劑組成物，於熱壓接時具有良好的埋入性，並且能夠抑制滲出。According to an aspect of the invention, there is provided an adhesive composition comprising a thermosetting resin, a curing agent and an elastomer, and the thermosetting resin comprises an epoxy resin having an alicyclic ring. According to such an adhesive composition, it has good embedding property at the time of thermocompression bonding, and can suppress bleed out.

硬化劑可包含酚樹脂。另外，彈性體可包含丙烯酸樹脂。The hardener may comprise a phenolic resin. Additionally, the elastomer may comprise an acrylic resin.

熱硬化性樹脂可更包含不具有脂環式環的芳香族環氧樹脂。不具有脂環式環的芳香族環氧樹脂可於25℃下為液體。The thermosetting resin may further contain an aromatic epoxy resin having no alicyclic ring. An aromatic epoxy resin having no alicyclic ring can be liquid at 25 °C.

接著劑組成物可更含有無機填料。另外，接著劑組成物可更含有硬化促進劑。The subsequent composition may further contain an inorganic filler. Further, the adhesive composition may further contain a hardening accelerator.

接著劑組成物可於將第一半導體元件經由第一導線而以打線接合的方式連接於基板上，並且於第一半導體元件上壓接第二半導體元件而成的半導體裝置中，用來壓接第二半導體元件並且埋入第一導線的至少一部分。The composition of the second component may be connected to the substrate by wire bonding via the first wire and bonded to the second semiconductor component on the first semiconductor component for crimping The second semiconductor component is embedded in at least a portion of the first wire.

進而，本發明可有關於一種含有熱硬化性樹脂、硬化劑及彈性體，且熱硬化性樹脂包含具有脂環式環的環氧樹脂的組成物的作為接著劑的應用或用來製造接著劑的應用，其中所述組成物於將第一半導體元件經由第一導線而以打線接合的方式連接於基板上，並且於第一半導體元件上壓接第二半導體元件而成的半導體裝置中，用來壓接第二半導體元件並且埋入第一導線的至少一部分。Further, the present invention relates to an application as a binder or a binder for a composition comprising a thermosetting resin, a curing agent and an elastomer, and the thermosetting resin comprising a composition of an epoxy resin having an alicyclic ring. The use of the composition in a semiconductor device in which a first semiconductor element is connected to a substrate by wire bonding via a first wire and crimped to a second semiconductor element on the first semiconductor element, The second semiconductor component is crimped and buried in at least a portion of the first wire.

另一方面中，本發明提供一種膜狀接著劑，其是將所述接著劑組成物形成為膜狀而成。In another aspect, the present invention provides a film-like adhesive which is formed by forming the adhesive composition into a film form.

又一方面中，本發明提供一種接著片，其包括基材及設置於基材上的所述膜狀接著劑。In still another aspect, the present invention provides an adhesive sheet comprising a substrate and the film-like adhesive disposed on the substrate.

基材可為切割帶。再者，本說明書中，有時將基材為切割帶的接著片稱為「切割黏晶一體型接著片」。The substrate can be a dicing tape. In the present specification, the adhesive sheet in which the base material is a dicing tape may be referred to as a "cut-molded integrated type back sheet".

接著片可更包括積層於膜狀接著劑的與基材為相反側的面上的保護膜。The sheet may further include a protective film laminated on the surface of the film-like adhesive opposite to the substrate.

進而又一方面中，本發明提供一種半導體裝置的製造方法，其包括：打線接合步驟，於基板上經由第一導線而電性連接第一半導體元件；層壓步驟，於第二半導體元件的單面貼附所述膜狀接著劑；以及黏晶（die bond）步驟，經由膜狀接著劑而壓接貼附有膜狀接著劑的第二半導體元件，藉此將第一導線的至少一部分埋入膜狀接著劑中。In still another aspect, the present invention provides a method of fabricating a semiconductor device, comprising: a wire bonding step of electrically connecting a first semiconductor component via a first wire on a substrate; and a laminating step of the second semiconductor component Attaching the film-like adhesive; and a die bond step of crimping a second semiconductor component to which a film-like adhesive is attached via a film-like adhesive, thereby burying at least a portion of the first wire Into the film-like adhesive.

再者，半導體裝置可為藉由將第一半導體晶片經由第一導線而以打線接合的方式連接於半導體基板上，並且於第一半導體晶片上，經由接著膜而壓接第二半導體晶片，從而將第一導線的至少一部分埋入接著膜中而成的導線埋入型的半導體裝置；亦可為將第一導線及第一半導體晶片埋入接著膜中而成的晶片埋入型的半導體裝置。Furthermore, the semiconductor device may be connected to the semiconductor substrate by wire bonding via the first wire, and the second semiconductor wafer may be crimped on the first semiconductor wafer via the bonding film, thereby a wire-embedded semiconductor device in which at least a portion of the first wire is buried in the bonding film; or a wafer-embedded semiconductor device in which the first wire and the first semiconductor wafer are buried in the bonding film .

根據本發明，可提供一種於熱壓接時具有良好的埋入性，並且能夠抑制滲出的接著劑組成物。因此，將該接著劑組成物形成為膜狀而成的膜狀接著劑可有效用作作為半導體晶片埋入型膜狀接著劑的晶片上膜（Film Over Die，FOD）或作為導線埋入型膜狀接著劑的導線上膜（Film Over Wire，FOW）。另外，根據本發明，可提供使用此種膜狀接著劑的接著片及半導體裝置的製造方法。According to the present invention, it is possible to provide an adhesive composition which has good embedding property at the time of thermocompression bonding and which can suppress bleeding. Therefore, the film-like adhesive agent in which the adhesive composition is formed into a film shape can be effectively used as a wafer over film (FOD) as a semiconductor wafer-embedded film-like adhesive or as a wire-embedded type. Film over wire (FOW) of film adhesive. Further, according to the present invention, a film using the film-like adhesive and a method of manufacturing a semiconductor device can be provided.

以下，適當參照圖式來對本發明的實施形態進行說明。但，本發明並不限定於以下的實施形態。Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the present invention is not limited to the following embodiments.

本說明書中，(甲基)丙烯酸是指丙烯酸或與其對應的甲基丙烯酸。關於(甲基)丙烯醯基等其他的類似表述亦同樣。In the present specification, (meth)acrylic acid means acrylic acid or methacrylic acid corresponding thereto. The same applies to other similar expressions such as (meth) acrylonitrile.

[接著劑組成物]
本實施形態的接著劑組成物含有：（A）熱硬化性樹脂、（B）硬化劑、及（C）彈性體。接著劑組成物為熱硬化性，經過半硬化（B階段）狀態且於硬化處理後可成完全硬化物（C階段）狀態。[Binder composition]
The adhesive composition of the present embodiment contains (A) a thermosetting resin, (B) a curing agent, and (C) an elastomer. The composition of the subsequent agent is thermosetting, and undergoes a semi-hardened (B-stage) state and can be in a completely cured state (C-stage) state after the hardening treatment.

＜（A）成分：熱硬化性樹脂＞
就接著性的觀點而言，熱硬化性樹脂可包含環氧樹脂。本實施形態的接著劑組成物包含（A-1）具有脂環式環的環氧樹脂作為熱硬化性樹脂。<(A) component: thermosetting resin>
The thermosetting resin may contain an epoxy resin from the viewpoint of adhesion. The adhesive composition of the present embodiment contains (A-1) an epoxy resin having an alicyclic ring as a thermosetting resin.

（A-1）成分為分子內具有脂環式環及環氧基的化合物。環氧基可經由單鍵或連結基（例如伸烷基、氧基伸烷基等）而鍵結於該化合物的脂環式環或脂環式環以外的部位。另外，該化合物亦可為具有與構成脂環式環的兩個碳原子一同形成的環氧基的化合物（即，脂環式環氧化合物）。藉由包含（A-1）成分來作為熱硬化性樹脂，而於熱壓接時具有良好的埋入性，並且能夠抑制滲出。The component (A-1) is a compound having an alicyclic ring and an epoxy group in the molecule. The epoxy group may be bonded to a moiety other than the alicyclic ring or the alicyclic ring of the compound via a single bond or a linking group (for example, an alkyl group, an alkylene group, or the like). Further, the compound may also be a compound having an epoxy group formed together with two carbon atoms constituting the alicyclic ring (that is, an alicyclic epoxy compound). The component (A-1) is contained as a thermosetting resin, and has good embedding property at the time of thermocompression bonding, and can suppress bleeding.

（A-1）成分的環氧當量並無特別限制，可為90 g/eq～600 g/eq、100 g/eq～500 g/eq、或120 g/eq～450 g/eq。若（A-1）成分的環氧當量為此種範圍，則有可獲得更良好的反應性及流動性的傾向。The epoxy equivalent of the component (A-1) is not particularly limited and may be from 90 g/eq to 600 g/eq, from 100 g/eq to 500 g/eq, or from 120 g/eq to 450 g/eq. When the epoxy equivalent of the component (A-1) is in such a range, more favorable reactivity and fluidity tend to be obtained.

（A-1）成分例如可為下述通式（1）～通式（4）所表示的環氧樹脂的任一者。The component (A-1) can be, for example, any of the epoxy resins represented by the following general formulae (1) to (4).

式（1）中，E表示脂環式環，G表示單鍵或伸烷基，R1 分別獨立地表示氫原子或一價烴基。n1表示1～10的整數，m表示1～3的整數。In the formula (1), E represents an alicyclic ring, G represents a single bond or an alkylene group, and R 1 each independently represents a hydrogen atom or a monovalent hydrocarbon group. N1 represents an integer of 1 to 10, and m represents an integer of 1 to 3.

E的碳原子數可為4～12、5～11、或6～10。E可為單環亦可為多環，較佳為多環，更佳為二環戊二烯環。G中的伸烷基可為亞甲基、伸乙基、伸丙基、伸丁基、伸戊基等碳數1～5的伸烷基。G較佳為單鍵。R1 中的一價烴基例如可為甲基、乙基、丙基、丁基、戊基等烷基；苯基、萘基等芳基；吡啶基等雜芳基。R1 較佳為氫原子。The number of carbon atoms of E may be 4 to 12, 5 to 11, or 6 to 10. E may be a single ring or a polycyclic ring, preferably a polycyclic ring, more preferably a dicyclopentadiene ring. The alkylene group in G may be an alkylene group having 1 to 5 carbon atoms such as a methylene group, an ethyl group, a propyl group, a butyl group, and a pentyl group. G is preferably a single bond. The monovalent hydrocarbon group in R 1 may be, for example, an alkyl group such as a methyl group, an ethyl group, a propyl group, a butyl group or a pentyl group; an aryl group such as a phenyl group or a naphthyl group; or a heteroaryl group such as a pyridyl group. R 1 is preferably a hydrogen atom.

通式（1）所表示的環氧樹脂可為下述通式（1a）所表示的環氧樹脂。The epoxy resin represented by the formula (1) may be an epoxy resin represented by the following formula (1a).

式（1a）中，n1的含義與所述相同。In the formula (1a), the meaning of n1 is the same as described above.

作為通式（1a）所表示的環氧樹脂的市售品，例如可列舉：HP-7200L、HP-7200H、HP-7200（均為迪愛生（DIC）股份有限公司製造）；XD-1000（日本化藥股份有限公司製造）等。As a commercial item of the epoxy resin represented by the formula (1a), for example, HP-7200L, HP-7200H, HP-7200 (all manufactured by Dickson Co., Ltd.); XD-1000 (for example); Made by Nippon Chemical Co., Ltd.).

式（2）中，R2 表示二價烴基。In the formula (2), R 2 represents a divalent hydrocarbon group.

R2 中的二價烴基例如可為：亞甲基、伸乙基、伸丙基、伸丁基、伸戊基等伸烷基；伸苯基、伸萘基等伸芳基；伸吡啶基等伸雜芳基。R2 較佳為碳原子數1～5的伸烷基。The divalent hydrocarbon group in R 2 may be, for example, a methylene group, an exoethyl group, a propyl group, a butyl group, a pentyl group or the like; an exoaryl group such as a phenyl group or a naphthyl group; Wait for the heteroaryl group. R 2 is preferably an alkylene group having 1 to 5 carbon atoms.

作為通式（2）所表示的環氧樹脂的市售品，例如可列舉賽羅西德（CELLOXIDE）2021P、賽羅西德（CELLOXIDE）2081（均為大賽璐（Daicel）股份有限公司製造）等。As a commercial item of the epoxy resin represented by the formula (2), for example, CELLOXIDE 2021P and CELLOXIDE 2081 (all manufactured by Daicel Co., Ltd.) can be cited. Wait.

式（3）中，R3 、R4 、及R5 分別獨立地表示二價烴基。In the formula (3), R 3 , R 4 and R 5 each independently represent a divalent hydrocarbon group.

作為R3 、R4 、及R5 中的二價烴基，可列舉與作為R2 中的二價烴基而例示者相同的二價烴基。Examples of the divalent hydrocarbon group in R 3 , R 4 and R 5 include the same divalent hydrocarbon groups as those exemplified as the divalent hydrocarbon group in R 2 .

作為通式（3）所表示的環氧樹脂的市售品，例如可列舉新納環氧（Syna-Epoxy）28（新納希（SYANASIA）公司製造）等。As a commercial item of the epoxy resin represented by the formula (3), for example, Syna-Epoxy 28 (manufactured by SYANASIA) or the like can be mentioned.

式（4）中，R6 表示氫原子或一價烴基，n2表示1～10的整數。In the formula (4), R 6 represents a hydrogen atom or a monovalent hydrocarbon group, and n2 represents an integer of from 1 to 10.

作為R6 中的一價烴基，可列舉與作為R1 中的一價烴基而例示者相同的一價烴基。The monovalent hydrocarbon group in R 6 may, for example, be the same monovalent hydrocarbon group as exemplified as the monovalent hydrocarbon group in R 1 .

作為通式（4）所表示的環氧樹脂的市售品，例如可列舉EHPE3150（大賽璐股份有限公司製造）等。The commercially available product of the epoxy resin represented by the formula (4) is, for example, EHPE 3150 (manufactured by Daicel Co., Ltd.).

就耐熱性的觀點而言，（A-1）成分較佳為通式（1）所表示的環氧樹脂，更佳為通式（1a）所表示的環氧樹脂。From the viewpoint of heat resistance, the component (A-1) is preferably an epoxy resin represented by the formula (1), and more preferably an epoxy resin represented by the formula (1a).

以（A）成分總量為基準，（A-1）成分的含量可為15質量%～100質量%。（A-1）成分的含量可為40質量%以上、50質量%以上、或60質量%以上。The content of the component (A-1) may be 15% by mass to 100% by mass based on the total amount of the component (A). The content of the component (A-1) may be 40% by mass or more, 50% by mass or more, or 60% by mass or more.

以接著劑組成物總量為基準，（A-1）成分的含量可為5質量%以上、10質量%以上、或20質量%以上。若以接著劑組成物總量為基準，（A-1）成分的含量為5質量%以上，則有於熱壓接時具有更良好的埋入性，並且可充分抑制滲出的傾向。The content of the component (A-1) may be 5% by mass or more, 10% by mass or more, or 20% by mass or more based on the total amount of the adhesive composition. When the content of the component (A-1) is 5% by mass or more based on the total amount of the composition of the adhesive, it is more excellent in embedding at the time of thermocompression bonding, and the tendency of bleeding can be sufficiently suppressed.

除（A-1）成分以外，（A）成分亦可更包含（A-2）不具有脂環式環的芳香族環氧樹脂。此處，不具有脂環式環的芳香族環氧樹脂為分子內具有芳香環及環氧基，且不具有脂環式環的化合物。作為（A-2）成分，例如可列舉：雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、雙酚A酚醛清漆型環氧樹脂、雙酚F酚醛清漆型環氧樹脂、二苯乙烯型環氧樹脂、含三嗪骨架的環氧樹脂、含茀骨架的環氧樹脂、三苯酚苯酚甲烷型環氧樹脂、聯苯型環氧樹脂、伸二甲苯基型環氧樹脂、苯基芳烷基型環氧樹脂、聯苯芳烷基型環氧樹脂、萘型環氧樹脂、多官能苯酚類、蒽等多環芳香族類的二縮水甘油醚化合物等。該些可單獨使用一種或者將兩種以上組合使用。該些中，（A-2）成分可於25℃下為液體。In addition to the component (A-1), the component (A) may further contain (A-2) an aromatic epoxy resin having no alicyclic ring. Here, the aromatic epoxy resin which does not have an alicyclic ring is a compound which has an aromatic ring and an epoxy group in a molecule, and does not have an alicyclic ring. Examples of the component (A-2) include a bisphenol A epoxy resin, a bisphenol F epoxy resin, a bisphenol S epoxy resin, a phenol novolak epoxy resin, and a cresol novolak ring. Oxygen resin, bisphenol A novolak type epoxy resin, bisphenol F novolac type epoxy resin, stilbene type epoxy resin, triazine skeleton-containing epoxy resin, fluorene-containing epoxy resin, trisphenol Phenol methane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, phenyl aralkyl type epoxy resin, biphenyl aralkyl type epoxy resin, naphthalene type epoxy resin, polyfunctional A polyglycidyl ether compound such as a phenol or an anthracene. These may be used alone or in combination of two or more. Among these, the component (A-2) can be a liquid at 25 °C.

（A-2）成分的環氧當量並無特別限制，可為90 g/eq～600 g/eq、100 g/eq～500 g/eq、或120 g/eq～450 g/eq。若（A-2）成分的環氧當量為此種範圍，則有可獲得更良好的反應性及流動性的傾向。The epoxy equivalent of the component (A-2) is not particularly limited and may be from 90 g/eq to 600 g/eq, from 100 g/eq to 500 g/eq, or from 120 g/eq to 450 g/eq. When the epoxy equivalent of the component (A-2) is in such a range, more favorable reactivity and fluidity tend to be obtained.

以（A）成分總量為基準，（A-2）成分的含量可為0質量%～85質量%。（A-2）成分的含量可為60質量%以下、50質量%以下、或40質量%以下。The content of the component (A-2) may be 0% by mass to 85% by mass based on the total amount of the component (A). The content of the component (A-2) may be 60% by mass or less, 50% by mass or less, or 40% by mass or less.

＜（B）成分：硬化劑＞
（B）成分並無特別限制，可使用作為熱硬化性樹脂的硬化劑而通常所使用者。於熱硬化性樹脂包含環氧樹脂的情況下，作為（B）成分，例如可列舉：酚樹脂、酯化合物、芳香族胺、脂肪族胺、酸酐等。該些可單獨使用一種或者將兩種以上組合使用。該些中，就反應性及經時穩定性的觀點而言，（B）成分可包含酚樹脂。<(B) component: hardener>
The component (B) is not particularly limited, and a curing agent as a thermosetting resin can be used as a usual user. When the thermosetting resin contains an epoxy resin, examples of the component (B) include a phenol resin, an ester compound, an aromatic amine, an aliphatic amine, and an acid anhydride. These may be used alone or in combination of two or more. Among these, the component (B) may contain a phenol resin from the viewpoint of reactivity and stability with time.

酚樹脂只要為分子內具有酚性羥基者則可並無特別限制地使用。作為酚樹脂，例如可列舉：使苯酚、甲酚、間苯二酚（resorcin）、鄰苯二酚、雙酚A、雙酚F、苯基苯酚、胺基苯酚等酚類及/或α-萘酚、β-萘酚、二羥基萘等萘酚類與甲醛等具有醛基的化合物於酸性觸媒下縮合或共縮合而獲得的酚醛清漆型酚樹脂；由烯丙基化雙酚A、烯丙基化雙酚F、烯丙基化萘二醇、苯酚酚醛清漆、苯酚等酚類及/或萘酚類與二甲氧基對二甲苯或雙(甲氧基甲基)聯苯所合成的苯酚芳烷基樹脂、萘酚芳烷基樹脂、聯苯芳烷基型酚樹脂、苯基芳烷基型酚樹脂等。該些可單獨使用一種或者將兩種以上組合使用。該些中，就耐熱性的觀點而言，酚樹脂較佳為於85℃、85%RH的恆溫恆濕槽中48小時的條件下，吸水率為2質量%以下，且利用熱重量分析儀（thermogravimetric analyzer，TGA）測定出的350℃下的加熱質量減少率（升溫速度：5℃/min，環境：氮）小於5質量%者。The phenol resin is not particularly limited as long as it has a phenolic hydroxyl group in the molecule. Examples of the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol, and/or α-. a novolac type phenol resin obtained by condensing or co-condensing a naphthol such as naphthol, β-naphthol or dihydroxynaphthalene with an aldehyde group-containing compound such as formaldehyde under an acidic catalyst; from allylated bisphenol A, Allylated bisphenol F, allylated naphthalenediol, phenol novolac, phenols such as phenol and/or naphthols and dimethoxy-p-xylene or bis(methoxymethyl)biphenyl A synthesized phenol aralkyl resin, a naphthol aralkyl resin, a biphenyl aralkyl type phenol resin, a phenyl aralkyl type phenol resin, or the like. These may be used alone or in combination of two or more. In the above, from the viewpoint of heat resistance, the phenol resin is preferably a water absorption rate of 2% by mass or less in a constant temperature and humidity chamber at 85 ° C and 85% RH for 48 hours, and a thermogravimetric analyzer is used. (Thermogravimetric analyzer, TGA) The heating mass reduction rate (temperature rising rate: 5 ° C / min, environment: nitrogen) measured at 350 ° C was less than 5% by mass.

作為酚樹脂的市售品，例如可列舉：芬萊特（Phenolite）KA系列、TD系列（DIC股份有限公司製造）；米萊斯（Mirex）XLC系列、XL系列（三井化學股份有限公司製造）；HE系列（空氣水（AIR WATER）股份有限公司製造）等。Examples of commercially available phenol resins include Phenolite KA series, TD series (manufactured by DIC Corporation), Mirex XLC series, and XL series (manufactured by Mitsui Chemicals, Inc.); HE series (air water (manufactured by AIR WATER Co., Ltd.)).

酚樹脂的羥基當量並無特別限制，可為80 g/eq～400 g/eq、90 g/eq～350 g/eq、或100 g/eq～300 g/eq。若酚樹脂的羥基當量為此種範圍，則有可獲得更良好的反應性及流動性的傾向。The hydroxyl equivalent of the phenol resin is not particularly limited and may be from 80 g/eq to 400 g/eq, from 90 g/eq to 350 g/eq, or from 100 g/eq to 300 g/eq. When the hydroxyl equivalent of the phenol resin is in this range, more favorable reactivity and fluidity tend to be obtained.

就硬化性的觀點而言，（A）成分為環氧樹脂且（B）成分為酚樹脂的情況下，環氧樹脂的環氧當量與酚樹脂的羥基當量的比（環氧樹脂的環氧當量/酚樹脂的羥基當量）可為0.30/0.70～0.70/0.30、0.35/0.65～0.65/0.35、0.40/0.60～0.60/0.40、或0.45/0.55～0.55/0.45。若該當量比為0.30/0.70以上，則有可獲得更充分的硬化性的傾向。若該當量比為0.70/0.30以下，則可防止黏度變得過高，可獲得更充分的流動性。From the viewpoint of hardenability, when the component (A) is an epoxy resin and the component (B) is a phenol resin, the ratio of the epoxy equivalent of the epoxy resin to the hydroxyl equivalent of the phenol resin (epoxy of the epoxy resin) The equivalent weight/hydroxyl equivalent of the phenol resin may be 0.30/0.70 to 0.70/0.30, 0.35/0.65 to 0.65/0.35, 0.40/0.60 to 0.60/0.40, or 0.45/0.55 to 0.55/0.45. When the equivalent ratio is 0.30/0.70 or more, more sufficient curability tends to be obtained. When the equivalent ratio is 0.70/0.30 or less, the viscosity can be prevented from becoming too high, and more sufficient fluidity can be obtained.

以接著劑組成物總量為基準，（A）成分及（B）成分的合計含量可為30質量%～70質量%。（A）成分及（B）成分的合計含量可為33質量%以上、36質量%以上、或40質量%以上，且可為65質量%以下、60質量%以下、或55質量%以下。若以接著劑組成物總量為基準，（A）成分及（B）成分的合計含量為30質量%以上，則有接著性提升的傾向。若以接著劑組成物總量為基準，（A）成分及（B）成分的合計含量為70質量%以下，則有可防止黏度變得過低，可進一步抑制滲出的傾向。The total content of the component (A) and the component (B) may be 30% by mass to 70% by mass based on the total amount of the adhesive composition. The total content of the component (A) and the component (B) may be 33% by mass or more, 36% by mass or more, or 40% by mass or more, and may be 65% by mass or less, 60% by mass or less, or 55% by mass or less. When the total content of the component (A) and the component (B) is 30% by mass or more based on the total amount of the adhesive composition, the adhesion tends to be improved. When the total content of the component (A) and the component (B) is 70% by mass or less based on the total amount of the adhesive composition, the viscosity can be prevented from being too low, and the tendency to bleed out can be further suppressed.

＜（C）成分：彈性體＞
本實施形態的接著劑組成物含有（C）彈性體。（C）成分較佳為構成彈性體的聚合物的玻璃轉移溫度（Tg）為50℃以下者。<(C) component: Elastomer>
The adhesive composition of this embodiment contains (C) an elastomer. The component (C) is preferably one in which the glass transition temperature (Tg) of the polymer constituting the elastomer is 50 ° C or lower.

作為（C）成分，例如可列舉：丙烯酸樹脂、聚酯樹脂、聚醯胺樹脂、聚醯亞胺樹脂、矽酮樹脂、丁二烯樹脂、丙烯腈樹脂及該些的改質體等。Examples of the component (C) include an acrylic resin, a polyester resin, a polyamide resin, a polyimide resin, an anthrone resin, a butadiene resin, an acrylonitrile resin, and modified bodies thereof.

就對溶劑的溶解性、流動性的觀點而言，（C）成分可包含丙烯酸樹脂。此處，所謂丙烯酸樹脂，是指包含源自(甲基)丙烯酸酯的結構單元的聚合物。丙烯酸樹脂較佳為包含源自具有環氧基、醇性或酚性羥基、羧基等交聯性官能基的(甲基)丙烯酸酯的結構單元作為結構單元的聚合物。另外，丙烯酸樹脂亦可為(甲基)丙烯酸酯與丙烯腈的共聚物等丙烯酸橡膠。The component (C) may contain an acrylic resin from the viewpoint of solubility in a solvent and fluidity. Here, the acrylic resin refers to a polymer containing a structural unit derived from a (meth) acrylate. The acrylic resin is preferably a polymer containing a structural unit derived from a (meth) acrylate having an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group-like crosslinkable functional group as a structural unit. Further, the acrylic resin may be an acrylic rubber such as a copolymer of (meth) acrylate and acrylonitrile.

丙烯酸樹脂的玻璃轉移溫度（Tg）可為-50℃～50℃或-30℃～30℃。若丙烯酸樹脂的Tg為-50℃以上，則有可防止接著劑組成物的柔軟性變得過高的傾向。藉此，於晶圓切割時容易將膜狀接著劑切斷，能夠防止毛刺的產生。若丙烯酸樹脂的Tg為50℃以下，則有可抑制接著劑組成物的柔軟性下降的傾向。藉此，當將膜狀接著劑貼附於晶圓時，有容易將空隙充分埋入的傾向。另外，能夠防止由晶圓的密接性的下降所導致的切割時的碎化（chipping）。此處，玻璃轉移溫度（Tg）是使用示差掃描熱量計（Differential Scanning Calorimeter，DSC）（例如理學股份有限公司製造的「Thermo Plus 2」）所測定出的值。The glass transition temperature (Tg) of the acrylic resin may be -50 ° C to 50 ° C or -30 ° C to 30 ° C. When the Tg of the acrylic resin is -50 ° C or more, the flexibility of the adhesive composition tends to be prevented from becoming excessively high. Thereby, the film-like adhesive is easily cut at the time of wafer dicing, and generation of burrs can be prevented. When the Tg of the acrylic resin is 50° C. or lower, the flexibility of the adhesive composition tends to be lowered. Therefore, when the film-like adhesive is attached to the wafer, the void tends to be sufficiently buried. In addition, it is possible to prevent chipping during dicing due to a decrease in the adhesion of the wafer. Here, the glass transition temperature (Tg) is a value measured using a Differential Scanning Calorimeter (DSC) (for example, "Thermo Plus 2" manufactured by Rigaku Corporation).

丙烯酸樹脂的重量平均分子量（Mw）可為10萬～300萬或50萬～200萬。若丙烯酸樹脂的Mw為此種範圍，則可適當地控制膜形成性、膜狀時的強度、可撓性、黏性等，並且回流性優異，可提升埋入性。此處，Mw是指藉由凝膠滲透層析法（Gel Permeation Chromatography，GPC）進行測定，並使用基於標準聚苯乙烯的校準曲線進行換算而得的值。The weight average molecular weight (Mw) of the acrylic resin may be from 100,000 to 3,000,000 or from 500,000 to 2,000,000. When the Mw of the acrylic resin is in such a range, the film formability, the film strength, the flexibility, the tackiness, and the like can be appropriately controlled, and the reflow property is excellent, and the embedding property can be improved. Here, Mw is a value measured by gel permeation chromatography (GPC) and converted using a calibration curve based on standard polystyrene.

作為丙烯酸樹脂的市售品，例如可列舉：SG-70L、SG-708-6、WS-023 EK30、SG-280 EK23、HTR-860P-3CSP、HTR-860P-3CSP-3DB（均為長瀨化成（Nagase ChemteX）股份有限公司製造）。As a commercial item of the acrylic resin, for example, SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3CSP, HTR-860P-3CSP-3DB (both are long 濑) Made by Nagase ChemteX Co., Ltd.).

相對於（A）成分及（B）成分的總量100質量份，（C）成分的含量可為20質量份～200質量份或30質量份～100質量份。若相對於（A）成分及（B）成分的總量100質量份，（C）成分的含量為20質量份以上，則有膜狀接著劑的操作性（例如彎折性等）變得更良好的傾向。若相對於（A）成分及（B）成分的總量100質量份，（C）成分的含量為200質量份以下，則有可進一步防止接著劑組成物的柔軟性變得過高的傾向。藉此而有於晶圓切割時容易將膜狀接著劑切斷，更有可能防止毛刺的產生的傾向。The content of the component (C) may be 20 parts by mass to 200 parts by mass or 30 parts by mass to 100 parts by mass per 100 parts by mass of the total of the components (A) and (B). When the content of the component (C) is 20 parts by mass or more based on 100 parts by mass of the total of the components (A) and (B), the handleability (for example, bending property) of the film-like adhesive becomes more. Good tendency. When the content of the component (C) is 200 parts by mass or less based on 100 parts by mass of the total of the components (A) and (B), the flexibility of the adhesive composition tends to be prevented from being excessively high. As a result, it is easy to cut the film-like adhesive at the time of wafer dicing, and it is more likely to prevent the occurrence of burrs.

＜（D）成分：無機填料＞
本實施形態的接著劑組成物可更含有（D）無機填料。作為無機填料，例如可列舉：氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁晶鬚、氮化硼、結晶性二氧化矽、非晶性二氧化矽等。該些可單獨使用一種或者將兩種以上組合使用。就所獲得的膜狀接著劑的導熱性進一步提升的觀點而言，無機填料可包含氧化鋁、氮化鋁、氮化硼、結晶性二氧化矽或非晶性二氧化矽。另外，就調整接著劑組成物的熔融黏度的觀點及對接著劑組成物賦予觸變性的觀點而言，無機填料可包含氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、結晶性二氧化矽或非晶性二氧化矽。<(D) component: inorganic filler>
The adhesive composition of the present embodiment may further contain (D) an inorganic filler. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium citrate, magnesium citrate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, and nitriding. Boron, crystalline cerium oxide, amorphous cerium oxide, and the like. These may be used alone or in combination of two or more. The inorganic filler may contain aluminum oxide, aluminum nitride, boron nitride, crystalline cerium oxide or amorphous cerium oxide from the viewpoint of further improving the thermal conductivity of the obtained film-like adhesive. Further, from the viewpoint of adjusting the melt viscosity of the adhesive composition and the viewpoint of imparting thixotropy to the adhesive composition, the inorganic filler may contain aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium citrate or strontium. Magnesium oxide, calcium oxide, magnesium oxide, aluminum oxide, crystalline cerium oxide or amorphous cerium oxide.

就接著性進一步提升的觀點而言，（D）成分的平均粒徑可為0.005 μm～0.5 μm或0.05 μm～0.3 μm。此處，平均粒徑是指藉由根據布厄特（Brunauer-Emmett-Teller，BET）比表面積進行換算而求出的值。The average particle diameter of the component (D) may be from 0.005 μm to 0.5 μm or from 0.05 μm to 0.3 μm from the viewpoint of further improvement in adhesion. Here, the average particle diameter refers to a value obtained by conversion based on a specific surface area of a Brunauer-Emmett-Teller (BET).

就其表面與溶劑、其他成分等的相容性、接著強度的觀點而言，（D）成分可藉由表面處理劑進行表面處理。作為表面處理劑，例如可列舉矽烷偶合劑等。作為矽烷偶合劑的官能基，例如可列舉：乙烯基、(甲基)丙烯醯基、環氧基、巰基、胺基、二胺基、烷氧基、乙氧基等。The component (D) can be surface-treated by a surface treatment agent from the viewpoint of compatibility between the surface and a solvent, other components, and the like. As a surface treatment agent, a decane coupling agent etc. are mentioned, for example. Examples of the functional group of the decane coupling agent include a vinyl group, a (meth)acryl fluorenyl group, an epoxy group, a decyl group, an amine group, a diamine group, an alkoxy group, and an ethoxy group.

相對於（A）成分、（B）成分及（C）成分的總量100質量份而言，（D）成分的含量可為10質量份～90質量份或10質量份～50質量份。若相對於（A）成分、（B）成分及（C）成分的總量100質量份而言，（D）成分的含量為10質量份以上，則有硬化前的接著層的切割性提升，硬化後的接著層的接著力提升的傾向。若相對於（A）成分、（B）成分及（C）成分的總量100質量份而言，（D）成分的含量為90質量份以下，則可抑制流動性的下降，能夠防止硬化後的膜狀接著劑的彈性係數變得過高。The content of the component (D) may be from 10 parts by mass to 90 parts by mass or from 10 parts by mass to 50 parts by mass per 100 parts by mass of the total of the components (A), (B) and (C). When the content of the component (D) is 10 parts by mass or more based on 100 parts by mass of the total of the components (A), (B) and (C), the cutting property of the adhesive layer before curing is improved. The tendency of the adhesion of the adhesive layer after hardening to increase. When the content of the component (D) is 90 parts by mass or less based on 100 parts by mass of the total of the components (A), (B) and (C), the fluidity can be suppressed from being lowered, and the curing can be prevented. The modulus of elasticity of the film-like adhesive becomes too high.

＜（E）成分：硬化促進劑＞
本實施形態的接著劑組成物可含有（E）硬化促進劑。硬化促進劑並無特別限定，可使用通常所使用者。作為（E）成分，例如可列舉：咪唑類及其衍生物、有機磷系化合物、二級胺類、三級胺類、四級銨鹽等。該些可單獨使用一種或者將兩種以上組合使用。該些中，就反應性的觀點而言，（E）成分可為咪唑類及其衍生物。<(E) component: hardening accelerator>
The adhesive composition of the present embodiment may contain (E) a curing accelerator. The hardening accelerator is not particularly limited, and a general user can be used. Examples of the component (E) include imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. These may be used alone or in combination of two or more. Among these, the component (E) may be an imidazole or a derivative thereof from the viewpoint of reactivity.

作為咪唑類，例如可列舉：2-甲基咪唑、1-苄基-2-甲基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-甲基咪唑等。該些可單獨使用一種或者將兩種以上組合使用。Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole. Wait. These may be used alone or in combination of two or more.

相對於（A）成分、（B）成分及（C）成分的總量100質量份而言，（E）成分的含量可為0.04質量份～3質量份或0.04質量份～0.2質量份。若（E）成分的含量為此種範圍，則有可兼具硬化性及可靠性的傾向。The content of the component (E) may be 0.04 parts by mass to 3 parts by mass or 0.04 parts by mass to 0.2 parts by mass based on 100 parts by mass of the total of the components (A), (B) and (C). When the content of the component (E) is in such a range, it tends to have both curability and reliability.

＜其他成分＞
本實施形態的接著劑組成物可更含有抗氧化劑、矽烷偶合劑、流變控制劑等作為其他成分。相對於（A）成分、（B）成分及（C）成分的總量100質量份而言，該些成分的含量可為0.02質量份～3質量份。<Other ingredients>
The adhesive composition of the present embodiment may further contain an antioxidant, a decane coupling agent, a rheology control agent or the like as another component. The content of these components may be 0.02 parts by mass to 3 parts by mass based on 100 parts by mass of the total of the components (A), (B) and (C).

本實施形態的接著劑組成物可作為經溶劑稀釋的接著劑清漆來使用。溶劑只要為可溶解（D）成分以外的成分者則並無特別限制。作為溶劑，例如可列舉：甲苯、二甲苯、均三甲苯、枯烯、對異丙基甲苯等芳香族烴；己烷、庚烷等脂肪族烴；甲基環己烷等環狀烷烴；四氫呋喃、1,4-二噁烷等環狀醚；丙酮、甲基乙基酮、甲基異丁基酮、環己酮、4-羥基-4-甲基-2-戊酮等酮；乙酸甲酯、乙酸乙酯、乙酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁內酯等酯；碳酸伸乙酯、碳酸伸丙酯等碳酸酯；N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基-2-吡咯啶酮等醯胺等。該些可單獨使用一種或者將兩種以上組合使用。該些中，就溶解性及沸點的觀點而言，溶劑可為甲苯、二甲苯、甲基乙基酮、甲基異丁基酮、或環己烷。The adhesive composition of this embodiment can be used as a solvent-thickened adhesive varnish. The solvent is not particularly limited as long as it is a component other than the component (D). Examples of the solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-isopropyltoluene; aliphatic hydrocarbons such as hexane and heptane; and cyclic alkanes such as methylcyclohexane; and tetrahydrofuran. a cyclic ether such as 1,4-dioxane; a ketone such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone or 4-hydroxy-4-methyl-2-pentanone; Esters such as ester, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ-butyrolactone; carbonates such as ethyl carbonate and propyl carbonate; N,N-dimethylformamide, Amidoxime such as N,N-dimethylacetamide or N-methyl-2-pyrrolidone. These may be used alone or in combination of two or more. Among these, the solvent may be toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexane from the viewpoint of solubility and boiling point.

以接著劑清漆的總質量為基準，接著劑清漆中的固體成分濃度可為10質量%～80質量%。The solid content concentration in the adhesive varnish may be 10% by mass to 80% by mass based on the total mass of the adhesive varnish.

接著劑清漆可藉由將（A）成分、（B）成分、（C）成分及溶劑、以及視需要的（D）成分、（E）成分及其他成分加以混合、混煉而進行製備。混合及混煉可將通常的攪拌機、擂潰機、三輥磨機（three-rod roll mill）、球磨機（ball mill）、珠磨機（bead mill）等分散機適當組合而進行。於含有（D）成分的情況下，藉由在預先混合（D）成分與低分子量成分後調配高分子量成分，而可縮短進行混合的時間。另外，於製備接著劑清漆後，可藉由真空脫氣等將清漆中的氣泡去除。The adhesive varnish can be prepared by mixing and kneading the component (A), the component (B), the component (C), the solvent, and optionally the component (D), the component (E), and other components. The mixing and kneading can be carried out by appropriately combining a disperser such as a usual mixer, a kneader, a three-rod roll mill, a ball mill, or a bead mill. When the component (D) is contained, by mixing the component (D) and the low molecular weight component in advance, the high molecular weight component is blended, whereby the time for mixing can be shortened. Further, after the adhesive varnish is prepared, the bubbles in the varnish can be removed by vacuum degassing or the like.

[膜狀接著劑]
圖1為表示一實施形態的膜狀接著劑的示意剖面圖。膜狀接著劑10為將以上所述的接著劑組成物形成為膜狀而成者。膜狀接著劑10可為半硬化（B階段）狀態。此種膜狀接著劑10可藉由將接著劑組成物塗佈於支撐膜而形成。於使用接著劑清漆的情況下，可將接著劑清漆塗佈於支撐膜，並進行加熱乾燥而將溶劑去除，藉此而形成膜狀接著劑10。[membrane adhesive]
Fig. 1 is a schematic cross-sectional view showing a film-like adhesive according to an embodiment. The film-like adhesive 10 is formed by forming the above-described adhesive composition into a film shape. The film-like adhesive 10 may be in a semi-hardened (B-stage) state. Such a film-like adhesive 10 can be formed by applying an adhesive composition to a support film. When an adhesive varnish is used, an adhesive varnish can be applied to a support film, and dried by heating to remove the solvent, thereby forming a film-like adhesive 10 .

支撐膜並無特別限制，例如可列舉：聚四氟乙烯、聚乙烯、聚丙烯、聚甲基戊烯、聚對苯二甲酸乙二酯、聚醯亞胺等的膜。支撐膜的厚度例如可為60 μm～200 μm或70 μm～170 μm。The support film is not particularly limited, and examples thereof include films of polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, and polyimine. The thickness of the support film may be, for example, 60 μm to 200 μm or 70 μm to 170 μm.

作為將接著劑清漆塗佈於支撐膜的方法，可使用公知的方法，例如可列舉：刮塗法、輥塗法、噴塗法、凹版塗佈法、棒塗法、簾塗法等。加熱乾燥的條件只要為所使用的溶劑充分揮發的條件則無特別限制，例如可為50℃～200℃下0.1分鐘～90分鐘。As a method of applying the adhesive varnish to the support film, a known method can be used, and examples thereof include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method. The conditions of heat drying are not particularly limited as long as the solvent to be used is sufficiently volatilized, and for example, it may be from 0.1 to 90 minutes at 50 to 200 ° C.

膜狀接著劑的厚度可根據用途而適當調整。就將半導體晶片、導線、基板的配線電路等凹凸等充分埋入的觀點而言，膜狀接著劑的厚度可為20 μm～200 μm、30 μm～200 μm、或40 μm～150 μm。The thickness of the film-like adhesive can be appropriately adjusted depending on the use. The film-like adhesive may have a thickness of 20 μm to 200 μm, 30 μm to 200 μm, or 40 μm to 150 μm from the viewpoint of sufficiently embedding irregularities such as semiconductor wafers, wires, and wiring circuits of the substrate.

[接著片]
圖2為表示一實施形態的接著片的示意剖面圖。接著片100包括基材20及設置於基材上的以上所述的膜狀接著劑10。[Next film]
Fig. 2 is a schematic cross-sectional view showing a back sheet of an embodiment. The sheet 100 then includes a substrate 20 and the above-described film-like adhesive 10 disposed on the substrate.

基材20並無特別限制，可為基材膜。基材膜可為與所述支撐膜相同者。The substrate 20 is not particularly limited and may be a substrate film. The substrate film may be the same as the support film.

基材20可為切割帶。此種接著片可用作切割黏晶一體型接著片。該情況下，由於對半導體晶圓的層壓步驟為一次，因此可有效率地作業。Substrate 20 can be a dicing tape. Such a back sheet can be used as a cut-and-stick type integrated sheet. In this case, since the lamination step for the semiconductor wafer is once, it is possible to work efficiently.

作為切割帶，例如可列舉：聚四氟乙烯膜、聚對苯二甲酸乙二酯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜、聚醯亞胺膜等塑膠膜等。另外，切割帶視需要可進行底塗塗佈、UV處理、電暈放電處理、研磨處理、蝕刻處理等表面處理。切割帶較佳為具有黏著性者。此種切割帶可為對所述塑膠膜賦予黏著性者，亦可為於所述塑膠膜的單面設置有黏著劑層者。Examples of the dicing tape include a plastic film such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film. Further, the dicing tape may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, etching treatment, or the like as needed. The dicing tape is preferably adhesive. Such a dicing tape may be one in which an adhesive layer is applied to the plastic film, or an adhesive layer may be provided on one side of the plastic film.

接著片100可與形成以上所述的膜狀接著劑的方法同樣地，藉由將接著劑組成物塗佈於基材膜而形成。將接著劑組成物塗佈於基材20的方法可與將以上所述的接著劑組成物塗佈於支撐膜的方法相同。The sheet 100 can be formed by applying an adhesive composition to a base film in the same manner as the method of forming the film-like adhesive described above. The method of applying the adhesive composition to the substrate 20 can be the same as the method of applying the above-described adhesive composition to the support film.

接著片100可使用預先製作的膜狀接著劑來形成。該情況下，接著片100可藉由使用輥層壓機、真空層壓機等於規定條件（例如室溫（20℃）或加熱狀態）下進行層壓而形成。接著片100可連續地製造，就效率佳而言，較佳為於加熱狀態下使用輥層壓機來形成。The sheet 100 can then be formed using a pre-formed film-like adhesive. In this case, the succeeding sheet 100 can be formed by laminating using a roll laminator or a vacuum laminator equal to a predetermined condition (for example, room temperature (20 ° C) or a heated state). The sheet 100 can then be continuously produced, and in terms of efficiency, it is preferably formed by using a roll laminator in a heated state.

就半導體晶片、導線、基板的配線電路等凹凸等的埋入性的觀點而言，膜狀接著劑10的厚度可為20 μm～200 μm、30 μm～200 μm、或40 μm～150 μm。若膜狀接著劑10的厚度為20 μm以上，則有可獲得更充分的接著力的傾向，若膜狀接著劑10的厚度為200 μm以下，則經濟且能夠響應半導體裝置的小型化的要求。The thickness of the film-like adhesive 10 can be 20 μm to 200 μm, 30 μm to 200 μm, or 40 μm to 150 μm from the viewpoint of embedding such as unevenness of a semiconductor wafer, a lead wire, or a wiring circuit of a substrate. When the thickness of the film-like adhesive 10 is 20 μm or more, a more sufficient adhesive force tends to be obtained, and when the thickness of the film-like adhesive 10 is 200 μm or less, it is economical and can respond to the miniaturization of the semiconductor device. .

圖3為表示另一實施形態的接著片的示意剖面圖。接著片110更包括積層於膜狀接著劑10的與基材20為相反側的面上的保護膜30。保護膜30可為與以上所述的支撐膜相同者。保護膜的厚度例如可為15 μm～200 μm或70 μm～170 μm。Fig. 3 is a schematic cross-sectional view showing a back sheet of another embodiment. The sheet 110 further includes a protective film 30 laminated on the surface of the film-like adhesive 10 opposite to the substrate 20. The protective film 30 may be the same as the support film described above. The thickness of the protective film may be, for example, 15 μm to 200 μm or 70 μm to 170 μm.

[半導體裝置]
圖4為表示一實施形態的半導體裝置的示意剖面圖。半導體裝置200是藉由將第一階段的第一半導體元件Wa經由第一導線88而以打線接合的方式連接於基板14，並且於第一半導體元件Wa上，經由膜狀接著劑10而壓接第二半導體元件Waa，從而將第一導線88的至少一部分埋入膜狀接著劑10中而成的半導體裝置。半導體裝置可為將第一導線88的至少一部分埋入而成的導線埋入型的半導體裝置，亦可為將第一導線88及第一半導體元件Wa埋入而成的半導體裝置。另外，半導體裝置200中，進而經由第二導線98而將基板14與第二半導體元件Waa電性連接，並且藉由密封材42而將第二半導體元件Waa密封。[semiconductor device]
Fig. 4 is a schematic cross-sectional view showing a semiconductor device according to an embodiment. The semiconductor device 200 is connected to the substrate 14 by wire bonding the first semiconductor element Wa of the first stage via the first wire 88, and is crimped via the film-like adhesive 10 on the first semiconductor element Wa. The second semiconductor element Waa is a semiconductor device in which at least a part of the first conductive line 88 is buried in the film-like adhesive 10 . The semiconductor device may be a wire-embedded semiconductor device in which at least a part of the first wire 88 is buried, or may be a semiconductor device in which the first wire 88 and the first semiconductor element Wa are buried. Further, in the semiconductor device 200, the substrate 14 and the second semiconductor element Waa are electrically connected via the second wire 98, and the second semiconductor element Waa is sealed by the sealing member 42.

第一半導體元件Wa的厚度可為10 μm～170 μm，第二半導體元件Waa的厚度可為20 μm～400 μm。埋入至膜狀接著劑10內部的第一半導體元件Wa為用以驅動半導體裝置200的控制器晶片。The thickness of the first semiconductor element Wa may be 10 μm to 170 μm, and the thickness of the second semiconductor element Waa may be 20 μm to 400 μm. The first semiconductor element Wa buried inside the film-like adhesive 10 is a controller wafer for driving the semiconductor device 200.

基板14包括電路圖案84、94分別於表面各形成有兩處的有機基板90。第一半導體元件Wa經由接著劑41而壓接於電路圖案94上。第二半導體元件Waa以覆蓋未壓接有第一半導體元件Wa的電路圖案94、第一半導體元件Wa、及電路圖案84的一部分的方式經由膜狀接著劑10而壓接於基板14。於由基板14上的電路圖案84、94所引起的凹凸的階差中埋入有膜狀接著劑10。並且，利用樹脂製的密封材42而將第二半導體元件Waa、電路圖案84及第二導線98密封。The substrate 14 includes an organic substrate 90 in which circuit patterns 84 and 94 are respectively formed at two places on the surface. The first semiconductor element Wa is crimped onto the circuit pattern 94 via the adhesive 41. The second semiconductor element Waa is pressure-bonded to the substrate 14 via the film-like adhesive 10 so as to cover a portion of the circuit pattern 94, the first semiconductor element Wa, and the circuit pattern 84 to which the first semiconductor element Wa is not pressed. The film-like adhesive 10 is embedded in the step of the unevenness caused by the circuit patterns 84 and 94 on the substrate 14. Then, the second semiconductor element Waa, the circuit pattern 84, and the second lead 98 are sealed by the resin sealing material 42.

[半導體裝置的製造方法]
本實施形態的半導體裝置的製造方法包括：於基板上經由第一導線而電性連接第一半導體元件的第一打線接合步驟；於第二半導體元件的單面貼附以上所述的膜狀接著劑的層壓步驟；以及經由膜狀接著劑來壓接貼附有膜狀接著劑的第二半導體元件，藉此將第一導線的至少一部分埋入膜狀接著劑中的黏晶步驟。[Method of Manufacturing Semiconductor Device]
A method of manufacturing a semiconductor device according to the present embodiment includes a first bonding step of electrically connecting a first semiconductor element via a first conductive line on a substrate, and attaching the above-described film to a single surface of the second semiconductor element. a laminating step of the agent; and a second semiconductor element to which the film-like adhesive is attached via a film-like adhesive, whereby at least a portion of the first wire is buried in the film-forming step in the film-like adhesive.

圖5～圖9為表示一實施形態的半導體裝置的製造方法的一系列步驟的示意剖面圖。本實施形態的半導體裝置200為將第一導線88及第一半導體元件Wa埋入而成的半導體裝置，可藉由以下程序而製造。首先，如圖5所示，於基板14上的電路圖案94上壓接具有接著劑41的第一半導體元件Wa，且經由第一導線88而將基板14上的電路圖案84與第一半導體元件Wa電性接合連接（第一打線接合步驟）。5 to 9 are schematic cross-sectional views showing a series of steps of a method of manufacturing a semiconductor device according to an embodiment. The semiconductor device 200 of the present embodiment is a semiconductor device in which the first conductive line 88 and the first semiconductor element Wa are embedded, and can be manufactured by the following procedure. First, as shown in FIG. 5, the first semiconductor element Wa having the adhesive 41 is crimped onto the circuit pattern 94 on the substrate 14, and the circuit pattern 84 on the substrate 14 is connected to the first semiconductor element via the first wire 88. Wa electrical joint connection (first wire bonding step).

其次，於半導體晶圓（例如厚度為100 μm、尺寸為8吋）的單面上層壓接著片100，並剝去基材20，藉此而於半導體晶圓的單面貼附膜狀接著劑10（例如厚度為110 μm）。並且，於將切割帶貼合於膜狀接著劑10後，切割為規定的大小（例如7.5 mm見方），藉此而如圖6所示，獲得貼附有膜狀接著劑10的第二半導體元件Waa（層壓步驟）。Next, the bonding sheet 100 is laminated on one surface of a semiconductor wafer (for example, a thickness of 100 μm and a size of 8 Å), and the substrate 20 is peeled off, thereby attaching a film-like adhesive to one side of the semiconductor wafer. 10 (for example, 110 μm thick). Then, after the dicing tape is bonded to the film-like adhesive 10, it is cut into a predetermined size (for example, 7.5 mm square), whereby a second semiconductor to which the film-like adhesive 10 is attached is obtained as shown in FIG. Element Waa (lamination step).

層壓步驟的溫度條件可為50℃～100℃或60℃～80℃。若層壓步驟的溫度為50℃以上，則可獲得與半導體晶圓的良好的密接性。若層壓步驟的溫度為100℃以下，則可抑制膜狀接著劑10於層壓步驟中過度流動，因而可防止引起厚度的變化等。The temperature of the laminating step may be from 50 ° C to 100 ° C or from 60 ° C to 80 ° C. When the temperature of the laminating step is 50 ° C or more, good adhesion to the semiconductor wafer can be obtained. When the temperature of the laminating step is 100 ° C or less, excessive flow of the film-like adhesive 10 in the laminating step can be suppressed, and thus variations in thickness and the like can be prevented.

作為切割方法，例如可列舉：使用旋轉刀刃的刀片切割、藉由雷射而將膜狀接著劑或晶圓與膜狀接著劑的兩者切斷的方法等。Examples of the cutting method include a blade cutting using a rotary blade, a method of cutting a film-like adhesive or a wafer and a film-like adhesive by laser, and the like.

並且，將貼附有膜狀接著劑10的第二半導體元件Waa壓接於經由第一導線88而接合連接有第一半導體元件Wa的基板14。具體而言，如圖7所示，以藉由膜狀接著劑10來覆蓋第一導線88及第一半導體元件Wa的方式載置貼附有膜狀接著劑10的第二半導體元件Waa，繼而，如圖8所示，藉由使第二半導體元件Waa壓接於基板14而將第二半導體元件Waa固定於基板14（黏晶步驟）。黏晶步驟較佳為將膜狀接著劑10於80℃～180℃、0.01 MPa～0.50 MPa的條件下壓接0.5秒～3.0秒。於黏晶步驟之後，將膜狀接著劑10於60℃～175℃、0.3 MPa～0.7 MPa的條件下加壓及加熱5分鐘以上。Then, the second semiconductor element Waa to which the film-like adhesive 10 is attached is pressure-bonded to the substrate 14 to which the first semiconductor element Wa is bonded via the first wire 88. Specifically, as shown in FIG. 7 , the second semiconductor element Waa to which the film-like adhesive 10 is attached is placed so as to cover the first conductive line 88 and the first semiconductor element Wa by the film-like adhesive 10, and then As shown in FIG. 8, the second semiconductor element Waa is fixed to the substrate 14 by crimping the second semiconductor element Waa to the substrate 14 (bonding step). The die bonding step is preferably performed by crimping the film-like adhesive 10 at 80 ° C to 180 ° C and 0.01 MPa to 0.50 MPa for 0.5 second to 3.0 seconds. After the die bonding step, the film-like adhesive 10 is pressurized and heated at 60 ° C to 175 ° C and 0.3 MPa to 0.7 MPa for 5 minutes or longer.

繼而，如圖9所示，於將基板14與第二半導體元件Waa經由第二導線98而電性連接後（第二打線接合步驟），利用密封材42將電路圖案84、第二導線98及第二半導體元件Waa密封。藉由經過此種步驟而可製造半導體裝置200。Then, as shown in FIG. 9, after the substrate 14 and the second semiconductor element Waa are electrically connected via the second wire 98 (second wire bonding step), the circuit pattern 84, the second wire 98, and the sealing material 42 are used. The second semiconductor element Waa is sealed. The semiconductor device 200 can be manufactured by such a process.

作為其他實施形態，半導體裝置亦可為將第一導線88的至少一部分埋入而成的導線埋入型的半導體裝置。
[實施例]In another embodiment, the semiconductor device may be a wire-embedded semiconductor device in which at least a part of the first wire 88 is buried.
[Examples]

以下，列舉實施例來對本發明進行更具體的說明。但本發明並不限定於該些實施例。Hereinafter, the present invention will be more specifically described by way of examples. However, the invention is not limited to the embodiments.

（實施例1～實施例8及比較例1～比較例4）
＜接著劑片的製作＞
將以下所示的各成分以表1及表2所示的調配比例（質量份）混合，並使用環己酮作為溶媒來製備固體成分為40質量%的接著劑組成物的清漆。其次，利用100目的過濾器對所獲得的清漆進行過濾，並進行真空脫泡。將真空脫泡後的清漆塗佈於作為基材膜的厚度38 μm的已實施脫模處理的聚對苯二甲酸乙二酯（polyethylene terephthalate，PET）膜上。以90℃下5分鐘、繼而140℃下5分鐘的兩階段對所塗佈的清漆進行加熱乾燥。如此而獲得於基材膜上具有處於半硬化（B階段）狀態的厚度110 μm的膜狀接著劑的接著片。(Examples 1 to 8 and Comparative Examples 1 to 4)
<Preparation of the adhesive sheet>
Each of the components shown below was mixed at a mixing ratio (parts by mass) shown in Tables 1 and 2, and a varnish having an adhesive composition having a solid content of 40% by mass was prepared using cyclohexanone as a solvent. Next, the obtained varnish was filtered using a 100-mesh filter, and vacuum defoaming was performed. The vacuum defoamed varnish was applied onto a polyethylene terephthalate (PET) film which had been subjected to release treatment as a base film having a thickness of 38 μm. The applied varnish was dried by heating in two stages at 90 ° C for 5 minutes and then at 140 ° C for 5 minutes. Thus, a film of a film-like adhesive having a thickness of 110 μm in a semi-hardened (B-stage) state was obtained on the substrate film.

再者，表1及表2中的各成分如下所述。In addition, each component in Table 1 and Table 2 is as follows.

（A）熱硬化性樹脂
（A-1）具有脂環式環的環氧樹脂
A-1-1：通式（1a）所表示的環氧樹脂（具有二環戊二烯結構的環氧樹脂），DIC股份有限公司製造，商品名：HP-7200L，環氧當量：250 g/eq～280 g/eq
A-1-2：通式（1a）所表示的環氧樹脂（具有二環戊二烯結構的環氧樹脂），日本化藥股份有限公司製造，商品名：XD-1000，環氧當量：254 g/eq
A-1-3：通式（2）所表示的環氧樹脂（25℃下為液體），大賽璐股份有限公司製造，商品名：賽羅西德（CELLOXIDE）2021P，環氧當量：128 g/eq～145 g/eq
A-1-4：通式（4）所表示的環氧樹脂，大賽璐股份有限公司製造，商品名：EHPE3150，環氧當量：170 g/eq～190 g/eq
（A-2）不具有脂環式環的芳香族環氧樹脂
A-2-1：多官能芳香族環氧樹脂，普林泰科（Printec）股份有限公司製造，商品名：VG3101L，環氧當量：210 g/eq
A-2-2：甲酚酚醛清漆型環氧樹脂，新日鐵住金化學股份有限公司製造，商品名：YDCN-700-10，環氧當量：209 g/eq
A-2-3：雙酚F型環氧樹脂（25℃下為液體），DIC股份有限公司製造，商品名：EXA-830CRP，環氧當量：159 g/eq
（B）硬化劑
B-1：雙酚A酚醛清漆型酚樹脂，DIC股份有限公司製造，商品名：LF-4871，羥基當量：118 g/eq
B-2：苯基芳烷基型酚樹脂，三井化學股份有限公司製造，商品名：XLC-LL，羥基當量：175 g/eq
B-3：苯基芳烷基型酚樹脂，空氣水股份有限公司製造，商品名：HE-100C-30，羥基當量：170 g/eq
（C）彈性體
C-1：含環氧基的丙烯酸樹脂（丙烯酸橡膠），長瀨化成股份有限公司製造，商品名：HTR-860P，重量平均分子量：80萬，縮水甘油基官能基單體比率：3%，Tg：-7℃
C-2：丙烯酸樹脂（丙烯酸橡膠），長瀨化成股份有限公司製造，商品名：SG-70L，重量平均分子量：90萬，酸價：5 mgKOH/g， Tg：-13℃
（D）無機填料
D-1：二氧化矽填料分散液，熔融二氧化矽，雅都瑪（Admatechs）股份有限公司製造，商品名：SC2050-HLG，平均粒徑：0.50 μm
（E）硬化促進劑
E-1：1-氰基乙基-2-苯基咪唑，四國化成工業股份有限公司製造，商品名：固唑（Curezol）2PZ-CN(A) Thermosetting resin (A-1) epoxy resin having an alicyclic ring
A-1-1: Epoxy resin represented by the formula (1a) (epoxy resin having a dicyclopentadiene structure), manufactured by DIC Corporation, trade name: HP-7200L, epoxy equivalent: 250 g /eq~280 g/eq
A-1-2: Epoxy resin represented by the formula (1a) (epoxy resin having a dicyclopentadiene structure), manufactured by Nippon Kayaku Co., Ltd., trade name: XD-1000, epoxy equivalent: 254 g/eq
A-1-3: Epoxy resin represented by the formula (2) (liquid at 25 ° C), manufactured by Daicel Co., Ltd., trade name: CELLOXIDE 2021P, epoxy equivalent: 128 g /eq~145 g/eq
A-1-4: Epoxy resin represented by the formula (4), manufactured by Daicel Co., Ltd., trade name: EHPE 3150, epoxy equivalent: 170 g/eq to 190 g/eq
(A-2) Aromatic epoxy resin without alicyclic ring
A-2-1: Polyfunctional aromatic epoxy resin, manufactured by Printec Co., Ltd., trade name: VG3101L, epoxy equivalent: 210 g/eq
A-2-2: Cresol novolac type epoxy resin, manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., trade name: YDCN-700-10, epoxy equivalent: 209 g/eq
A-2-3: bisphenol F type epoxy resin (liquid at 25 ° C), manufactured by DIC Corporation, trade name: EXA-830CRP, epoxy equivalent: 159 g/eq
(B) hardener
B-1: bisphenol A novolak type phenol resin, manufactured by DIC Corporation, trade name: LF-4871, hydroxyl equivalent: 118 g/eq
B-2: Phenyl aralkyl type phenol resin, manufactured by Mitsui Chemicals, Inc., trade name: XLC-LL, hydroxyl equivalent: 175 g/eq
B-3: Phenyl aralkyl type phenol resin, manufactured by Air Water Co., Ltd., trade name: HE-100C-30, hydroxyl equivalent: 170 g/eq
(C) Elastomer
C-1: an epoxy group-containing acrylic resin (acrylic rubber), manufactured by Nagase Chemical Co., Ltd., trade name: HTR-860P, weight average molecular weight: 800,000, glycidyl functional monomer ratio: 3%, Tg: -7 ° C
C-2: Acrylic resin (acrylic rubber), manufactured by Changchun Chemical Co., Ltd., trade name: SG-70L, weight average molecular weight: 900,000, acid value: 5 mgKOH/g, Tg: -13 °C
(D) inorganic filler
D-1: cerium oxide filler dispersion, molten cerium oxide, manufactured by Admatechs Co., Ltd., trade name: SC2050-HLG, average particle diameter: 0.50 μm
(E) hardening accelerator
E-1:1-cyanoethyl-2-phenylimidazole, manufactured by Shikoku Chemical Industry Co., Ltd., trade name: Curezol 2PZ-CN

＜各種物性的評價＞
對所獲得的接著片進行埋入性及滲出量的評價。<Evaluation of various physical properties>
The obtained adhesive sheet was evaluated for embedding property and bleeding amount.

[埋入性評價]
製作以下評價樣品來對接著片的埋入性進行評價。對於以上所獲得的膜狀接著劑（厚度110 μm），剝去基材膜並貼附於切割帶，獲得切割黏晶一體型接著片。其次，將厚度100 μm的半導體晶圓（8吋）加熱至70℃而貼附於接著劑側。其後，將該半導體晶圓切割為7.5 mm見方，藉此而獲得半導體晶片A。其次，準備切割黏晶一體型接著片（日立化成股份有限公司製造，商品名：HR9004-10）（厚度10 μm），加熱至70℃而貼附於厚度50 μm的半導體晶圓（8吋）。其後，將該半導體晶圓切割為4.5 mm見方，藉此而獲得帶有黏晶膜的半導體晶片B。繼而，準備塗佈有阻焊劑（太陽日酸股份有限公司製造，商品名：AUS308）的總厚度為260 μm的評價用基板，以帶有黏晶膜的半導體晶片B的黏晶膜與評價用基板的阻焊劑接觸的方式，於120℃、0.20 MPa、2秒的條件下進行壓接。其後，以半導體晶片A的膜狀接著劑與半導體晶片B的半導體晶圓接觸的方式，於120℃、0.20 MPa、1.5秒的條件下進行壓接，獲得評價樣品。此時，以先前所壓接的半導體晶片B處於半導體晶片A的中央的方式進行位置對準。對以所述方式獲得的評價樣品，利用超音波數位圖像診斷裝置（因賽特（Insight）股份有限公司製造，探針：75 MHz）來觀測空隙的觀測的有無，於觀測到空隙的情況下算出每單位面積的空隙的面積的比例，並將該些分析結果作為埋入性進行評價。評價基準如下所述。將結果示於表1及表2中。
A：未觀察到空隙。
B：雖觀測到空隙，但其比例小於5面積%。
C：觀察到空隙，且其比例為5面積%以上。[buried evaluation]
The following evaluation samples were prepared to evaluate the embedding property of the succeeding sheets. With respect to the film-like adhesive (thickness: 110 μm) obtained above, the base film was peeled off and attached to a dicing tape to obtain a cut-and-seize integrated type back sheet. Next, a semiconductor wafer (8 Å) having a thickness of 100 μm was heated to 70 ° C and attached to the adhesive side. Thereafter, the semiconductor wafer was cut into 7.5 mm squares, whereby the semiconductor wafer A was obtained. Next, it is prepared to cut a die-bonded one-piece piece (manufactured by Hitachi Chemical Co., Ltd., trade name: HR9004-10) (thickness 10 μm), and heat it to 70 ° C to attach it to a semiconductor wafer (8 inches) having a thickness of 50 μm. . Thereafter, the semiconductor wafer was cut into a 4.5 mm square, thereby obtaining a semiconductor wafer B with a die-bonding film. Then, an evaluation substrate having a total thickness of 260 μm coated with a solder resist (manufactured by Sun Nippon Acid Co., Ltd., trade name: AUS308) was prepared, and a die-bonding film of a semiconductor wafer B with a die-bonding film and evaluation was prepared. The solder resist of the substrate was contacted by crimping at 120 ° C, 0.20 MPa, and 2 seconds. Thereafter, the film-like adhesive of the semiconductor wafer A was brought into contact with the semiconductor wafer of the semiconductor wafer B, and pressure-bonded at 120 ° C, 0.20 MPa, and 1.5 seconds to obtain an evaluation sample. At this time, the alignment is performed such that the previously bonded semiconductor wafer B is at the center of the semiconductor wafer A. The evaluation sample obtained in the above manner was observed by the ultrasonic digital image diagnostic apparatus (manufactured by Insight Co., Ltd., probe: 75 MHz) for the presence or absence of the observation of the void, and the gap was observed. The ratio of the area of the void per unit area was calculated, and the results of the analysis were evaluated as the embedding property. The evaluation criteria are as follows. The results are shown in Tables 1 and 2.
A: No gap was observed.
B: Although a void was observed, the ratio was less than 5 area%.
C: A void was observed, and the ratio thereof was 5 area% or more.

[滲出量評價]
以與所述埋入性評價中所製作的評價樣品相同的方式來製作滲出量評價的評價樣品。使用顯微鏡，自評價樣品的四邊的中心，測量膜狀接著劑的露出量，將其最大值作為滲出量。將結果示於表1及表2中。[Evaluation of exudation]
An evaluation sample for evaluation of the amount of exudation was prepared in the same manner as the evaluation sample prepared in the evaluation of the embedding property. Using a microscope, the exposure amount of the film-like adhesive was measured from the center of the four sides of the evaluation sample, and the maximum value was taken as the amount of bleeding. The results are shown in Tables 1 and 2.

[滲出量評價]
僅對所述埋入性評價中為「A」或「B」者進行滲出量評價。以與所述埋入性評價中所製作的評價樣品相同的方式來製作滲出量評價的評價樣品。使用顯微鏡，自評價樣品的四邊的中心，測量膜狀接著劑的露出量，將其最大值作為滲出量。將結果示於表1及表2中。[Evaluation of exudation]
Only the amount of "A" or "B" in the evaluation of the embedding property was evaluated for the amount of exudation. An evaluation sample for evaluation of the amount of exudation was prepared in the same manner as the evaluation sample prepared in the evaluation of the embedding property. Using a microscope, the exposure amount of the film-like adhesive was measured from the center of the four sides of the evaluation sample, and the maximum value was taken as the amount of bleeding. The results are shown in Tables 1 and 2.

表1
Table 1

表2
Table 2

如表1所示，包含具有脂環式環的環氧樹脂的實施例1～實施例3與不含其的比較例1～比較例3相比，可維持良好的埋入性，並且抑制滲出。另外，根據表2的實施例4～實施例8而判明：於使用具有其他脂環式環的環氧樹脂的情況下，亦有相同的傾向。根據該些結果而確認到：本發明的接著劑組成物於熱壓接時具有良好的埋入性，並且能夠抑制滲出。
[產業上之可利用性]As shown in Table 1, Examples 1 to 3 containing an epoxy resin having an alicyclic ring were able to maintain good embedding properties and suppress bleeding as compared with Comparative Examples 1 to 3 without them. . Further, according to Examples 4 to 8 of Table 2, it was found that the same tendency was observed in the case of using an epoxy resin having another alicyclic ring. From these results, it was confirmed that the adhesive composition of the present invention has good embedding property at the time of thermocompression bonding, and can suppress bleeding.
[Industrial availability]

如以上結果所示，本發明的接著劑組成物的熱壓接時的埋入性良好，且可抑制滲出，因此將接著劑組成物形成為膜狀而成的膜狀接著劑可有效用作作為晶片埋入型膜狀接著劑的晶片上膜（Film Over Die，FOD）或作為導線埋入型膜狀接著劑的導線上膜（Film Over Wire，FOW）。As a result of the above, the adhesive composition of the present invention has good embedding property at the time of thermocompression bonding and can suppress bleeding. Therefore, a film-like adhesive agent in which an adhesive composition is formed into a film shape can be effectively used. A wafer over-film (FOD) as a wafer-embedded film-like adhesive or a film over-film (FOW) as a wire-embedded film-like adhesive.

10‧‧‧膜狀接著劑10‧‧‧membranous adhesive

14‧‧‧基板 14‧‧‧Substrate

20‧‧‧基材 20‧‧‧Substrate

30‧‧‧保護膜 30‧‧‧Protective film

41‧‧‧接著劑 41‧‧‧Adhesive

42‧‧‧密封材 42‧‧‧ Sealing material

84、94‧‧‧電路圖案 84, 94‧‧‧ circuit pattern

88‧‧‧第一導線 88‧‧‧First wire

90‧‧‧有機基板 90‧‧‧Organic substrate

98‧‧‧第二導線 98‧‧‧Second wire

100、110‧‧‧接著片 100,110‧‧‧Next film

200‧‧‧半導體裝置 200‧‧‧Semiconductor device

Wa‧‧‧第一半導體元件 Wa‧‧‧First semiconductor component

Waa‧‧‧第二半導體元件 Waa‧‧‧second semiconductor component

圖1為表示一實施形態的膜狀接著劑的示意剖面圖。Fig. 1 is a schematic cross-sectional view showing a film-like adhesive according to an embodiment.

圖2為表示一實施形態的接著片的示意剖面圖。 Fig. 2 is a schematic cross-sectional view showing a back sheet of an embodiment.

圖3為表示另一實施形態的接著片的示意剖面圖。 Fig. 3 is a schematic cross-sectional view showing a back sheet of another embodiment.

圖4為表示一實施形態的半導體裝置的示意剖面圖。 Fig. 4 is a schematic cross-sectional view showing a semiconductor device according to an embodiment.

圖5為表示一實施形態的半導體裝置的製造方法的一系列步驟的示意剖面圖。 Fig. 5 is a schematic cross-sectional view showing a series of steps of a method of manufacturing a semiconductor device according to an embodiment.

圖6為表示一實施形態的半導體裝置的製造方法的一系列步驟的示意剖面圖。 Fig. 6 is a schematic cross-sectional view showing a series of steps of a method of manufacturing a semiconductor device according to an embodiment.

圖7為表示一實施形態的半導體裝置的製造方法的一系列步驟的示意剖面圖。 Fig. 7 is a schematic cross-sectional view showing a series of steps of a method of manufacturing a semiconductor device according to an embodiment.

圖8為表示一實施形態的半導體裝置的製造方法的一系列步驟的示意剖面圖。 Fig. 8 is a schematic cross-sectional view showing a series of steps of a method of manufacturing a semiconductor device according to an embodiment.

圖9為表示一實施形態的半導體裝置的製造方法的一系列步驟的示意剖面圖。 Fig. 9 is a schematic cross-sectional view showing a series of steps of a method of manufacturing a semiconductor device according to an embodiment.

Claims (12)

一種接著劑組成物，其含有熱硬化性樹脂、硬化劑及彈性體，且 所述熱硬化性樹脂包含具有脂環式環的環氧樹脂。An adhesive composition containing a thermosetting resin, a hardener, and an elastomer, and The thermosetting resin contains an epoxy resin having an alicyclic ring. 如申請專利範圍第1項所述的接著劑組成物，其中所述硬化劑包含酚樹脂。The adhesive composition according to claim 1, wherein the hardener comprises a phenol resin. 如申請專利範圍第1項或第2項所述的接著劑組成物，其中所述彈性體包含丙烯酸樹脂。The adhesive composition according to claim 1 or 2, wherein the elastomer comprises an acrylic resin. 如申請專利範圍第1項至第3項中任一項所述的接著劑組成物，其中所述熱硬化性樹脂更包含不具有脂環式環的芳香族環氧樹脂。The adhesive composition according to any one of claims 1 to 3, wherein the thermosetting resin further comprises an aromatic epoxy resin having no alicyclic ring. 如申請專利範圍第4項所述的接著劑組成物，其中所述不具有脂環式環的芳香族環氧樹脂於25℃下為液體。The adhesive composition according to claim 4, wherein the aromatic epoxy resin having no alicyclic ring is a liquid at 25 °C. 如申請專利範圍第1項至第5項中任一項所述的接著劑組成物，其更含有無機填料。The adhesive composition according to any one of claims 1 to 5, further comprising an inorganic filler. 如申請專利範圍第1項至第6項中任一項所述的接著劑組成物，其更含有硬化促進劑。The adhesive composition according to any one of claims 1 to 6, which further contains a hardening accelerator. 一種膜狀接著劑，其是將如申請專利範圍第1項至第7項中任一項所述的接著劑組成物形成為膜狀而成。A film-like adhesive agent obtained by forming the adhesive composition according to any one of the items 1 to 7 of the invention as a film. 一種接著片，其包括： 基材；以及 設置於所述基材上的如申請專利範圍第8項所述的膜狀接著劑。A follower sheet comprising: Substrate; A film-like adhesive agent as set forth in claim 8 of the present invention. 如申請專利範圍第9項所述的接著片，其中所述基材為切割帶。The adhesive sheet of claim 9, wherein the substrate is a dicing tape. 如申請專利範圍第9項或第10項所述的接著片，其更包括積層於所述膜狀接著劑的與所述基材為相反側的面上的保護膜。The adhesive sheet according to claim 9 or 10, further comprising a protective film laminated on a surface of the film-like adhesive opposite to the substrate. 一種半導體裝置的製造方法，其包括： 打線接合步驟，於基板上經由第一導線而電性連接第一半導體元件； 層壓步驟，於第二半導體元件的單面貼附如申請專利範圍第8項所述的膜狀接著劑；以及 黏晶步驟，經由所述膜狀接著劑而壓接貼附有所述膜狀接著劑的第二半導體元件，藉此將所述第一導線的至少一部分埋入所述膜狀接著劑中。A method of fabricating a semiconductor device, comprising: a wire bonding step of electrically connecting the first semiconductor element via the first wire on the substrate; a laminating step of attaching a film-like adhesive as described in claim 8 to a single side of the second semiconductor component; In the die bonding step, the second semiconductor element to which the film-like adhesive is attached is pressure-bonded via the film-like adhesive, whereby at least a portion of the first wire is buried in the film-like adhesive.
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