TWI564361B - Die attach film - Google Patents
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Description
本發明係關於一種晶粒接附膜、半導體晶圓及半導體封裝方法。The present invention relates to a die attach film, a semiconductor wafer, and a semiconductor package method.
隨著近來在手機或行動終端機中所用之半導體記憶之高度整合及功能性的趨向，已頻繁地利用一種使用晶粒接附膜以疊置多個半導體晶片在半導體基材的方法。With the recent high integration and functional trend of semiconductor memory used in mobile phones or mobile terminals, a method of using a die attach film to stack a plurality of semiconductor wafers on a semiconductor substrate has been frequently utilized.
晶粒接附膜包括在切割程序中用於固定半導體晶片之壓敏性黏著層，及在晶粒結合程序中結合至半導體晶片背面且接附至接線基材(如導線架)的黏著層。The die attach film includes a pressure sensitive adhesive layer for holding a semiconductor wafer in a dicing process, and an adhesive layer bonded to the back surface of the semiconductor wafer in a die bonding process and attached to a wiring substrate such as a lead frame.
使用晶粒接附膜之封裝程序通常包括將晶圓切割成晶片之切割程序，將經切割之晶片結合至電路膜或導線架之晶粒結合程序，使用電連接手段(諸如金屬線)將裝在半導體晶片上之晶片墊與電路膜或導線架之電路圖形連接的金屬線連接程序，及使用包封(encapsulating)材料將經結合金屬線之半導體晶片包封以保護半導體晶片之內部電路及其他部分的模製程序。A package process using a die attach film typically includes a dicing process for dicing a wafer into a wafer, bonding the diced wafer to a die attach process of a circuit film or leadframe, and using an electrical connection means such as a metal wire. a metal wire connection process for connecting a wafer pad on a semiconductor wafer to a circuit pattern of a circuit film or a lead frame, and encapsulating a semiconductor wafer bonded with a metal wire using an encapsulating material to protect an internal circuit of the semiconductor chip and the like Part of the molding process.
在切割程序中，藉由例如鑽石輪將晶圓切成預定厚度。當施加過度之壓力或有機械衝擊時，產生因晶圓受破壞所引起之碎裂及能污染圖形之毛邊。近來，因為晶圓厚度減低以減低封裝尺寸及增加生產效率所需更嚴苛的切割條件，此問題更加嚴重。特別地，隨著晶圓變得更薄，在以前尚未造成問題之毛邊被發現逐漸更多地自晶粒往上突出，因此顯著地降低晶片之接附加工性，且污染圖形而降低封裝可靠性。In the cutting process, the wafer is cut to a predetermined thickness by, for example, a diamond wheel. When excessive pressure or mechanical shock is applied, chipping caused by damage to the wafer and burrs that can contaminate the pattern are generated. This problem has recently become more serious because of the reduced thickness of the wafer to reduce package size and increase the production efficiency required for more severe cutting conditions. In particular, as wafers become thinner, burrs that have not been problematic in the past have been found to gradually protrude more from the die, thus significantly reducing the attachability of the wafer and contaminating the pattern to reduce the reliability of the package. Sex.
為降低此種毛邊，大部分已知的技術已適應膜之物理性質或參數(諸如處理條件)的改變。然而，當企圖經由調節切割程序之參數以抑制毛邊時，在隨後程序(亦即晶粒結合程序)中擴展性降低，或晶片不容易取出。另外，當將晶片取出時，則位置誤差會在進行晶粒結合時發生，或因切割不足，在晶粒之上發生碎裂。To reduce such burrs, most known techniques have adapted to changes in the physical properties or parameters of the film, such as processing conditions. However, when it is attempted to suppress the burrs by adjusting the parameters of the cutting program, the spreadability is lowered in the subsequent process (i.e., the die bonding process), or the wafer is not easily taken out. In addition, when the wafer is taken out, the positional error may occur when grain bonding is performed, or chipping may occur on the crystal grains due to insufficient cutting.
在半導體封裝程序中，在切割程序之後從膜脫離之包括黏合層之晶片經結合至接線的基材(亦即導線架等)，然後進行之後的程序，包括模製程序。現今，在晶粒結合程序之後，必須在高溫下進行預先固化程序。此固化程序是要防止失敗，諸如在另一個半導體晶片從膜脫離且疊置在接線之基材的晶片上時，下方晶片被推動的現象；或該晶片因模樹脂流動而偏向一側的現象。然而，進行當預先固化程序時，黏合劑開始固化，且因此與之後程序中半導體基材相關之包埋性被降低。另外，因在預先固化程序中所施加之熱，晶圓或基材經翹曲，以致當進行金屬線結合時可能發生諸如彈起之失敗。就此而論，有可能大幅地降低半導體封裝之可靠性。In the semiconductor packaging process, the wafer including the adhesive layer detached from the film after the dicing process is bonded to the substrate of the wiring (i.e., lead frame, etc.), and then the subsequent processes, including the molding process. Nowadays, after the die bonding process, the pre-cure procedure must be performed at a high temperature. This curing procedure is to prevent failure, such as the phenomenon that the underlying wafer is pushed when another semiconductor wafer is detached from the film and stacked on the wafer of the wiring substrate; or the wafer is biased to one side due to the flow of the molding resin. . However, when the pre-curing procedure is performed, the adhesive begins to cure, and thus the embedding property associated with the semiconductor substrate in the subsequent process is lowered. In addition, the wafer or substrate is warped due to the heat applied in the pre-cure procedure, so that failure such as bounce may occur when wire bonding is performed. In this connection, it is possible to greatly reduce the reliability of the semiconductor package.
提供晶粒接附膜、使用彼之半導體晶圓及使用彼之半導體封裝方法，以克服先前技藝中所發生之問題。The present invention provides a die attach film, uses its semiconductor wafer, and uses its semiconductor packaging methods to overcome the problems that have occurred in the prior art.
本發明一方面係提供一種晶粒接附膜，其包括基底膜、形成在該基底膜上之壓敏性黏著劑部分、及形成在該壓敏性黏著劑部分上之黏著劑部分。在晶粒接附膜中，基底膜、壓敏性黏著劑部分及黏著劑部分之厚度分別以A、B及C表示，且B/A之值在0.15至0.5範圍內，且B/C之值在0.2至4範圍內。In one aspect, the present invention provides a die attach film comprising a base film, a pressure sensitive adhesive portion formed on the base film, and an adhesive portion formed on the pressure sensitive adhesive portion. In the die attach film, the thicknesses of the base film, the pressure sensitive adhesive portion, and the adhesive portion are represented by A, B, and C, respectively, and the value of B/A is in the range of 0.15 to 0.5, and B/C Values range from 0.2 to 4.
本發明另一方面提供一種包括該晶粒接附膜之半導體晶圓，其中該晶粒接附膜之該黏著劑部分係接附至晶圓的一個表面，且該晶粒接附膜之基底膜或壓敏性黏著劑部分固定至晶圓環框。Another aspect of the present invention provides a semiconductor wafer including the die attach film, wherein the adhesive portion of the die attach film is attached to one surface of the wafer, and the die attaches a film to the substrate The membrane or pressure sensitive adhesive is partially secured to the wafer ring frame.
本發明之另一方面提供一種半導體封裝方法，其包括切割依本發明之半導體晶圓，且將經由該切割步驟製得的半導體晶片取出。Another aspect of the present invention provides a semiconductor package method comprising cutting a semiconductor wafer according to the present invention and taking out a semiconductor wafer produced through the cutting step.
本發明係關於一種晶粒接附膜。此晶粒接附膜包括基底膜、形成在該基底膜上之壓敏性黏著劑部分及形成在該壓敏性黏著劑部分上之黏著劑部分。This invention relates to a die attach film. The die attach film includes a base film, a pressure sensitive adhesive portion formed on the base film, and an adhesive portion formed on the pressure sensitive adhesive portion.
在該晶粒接附膜中，該基底膜、該壓敏性黏著劑部分及該黏著劑部分之厚度分別以A、B及C表示，且B/A之值在0.15至0.5範圍內，且B/C之值在0.2至4範圍內。In the die attach film, the thickness of the base film, the pressure sensitive adhesive portion, and the adhesive portion are represented by A, B, and C, respectively, and the value of B/A is in the range of 0.15 to 0.5, and The value of B/C is in the range of 0.2 to 4.
在下文中，將詳述本發明之晶粒接附膜。Hereinafter, the die attach film of the present invention will be described in detail.
本發明之晶粒接附膜可以經配置以使壓敏性黏著劑部分(厚度：B)對基底膜(厚度：A)的厚度比(B/A)範圍在0.15至0.5之間，較佳在0.2至0.4之間。若B/A低於0.15，則壓敏性黏著劑部分與基底膜相比變得太薄，然後在切割程序中可能產生過多量之毛邊，或因不良的擴展性可能發生取出失敗。若B/A高於0.5，則在切割程序中可能發生過多之碎裂，或膜之處理特性可能變壞。The die attach film of the present invention may be configured such that the thickness ratio (B/A) of the pressure sensitive adhesive portion (thickness: B) to the base film (thickness: A) is in the range of 0.15 to 0.5, preferably Between 0.2 and 0.4. If the B/A is less than 0.15, the pressure-sensitive adhesive portion becomes too thin compared with the base film, and then an excessive amount of burrs may be generated in the cutting process, or the removal failure may occur due to poor expandability. If B/A is higher than 0.5, excessive chipping may occur in the cutting process, or the handling characteristics of the film may deteriorate.
本發明之晶粒接附膜也可以經配置以使該壓敏性黏著劑部分(厚度：B)對該黏著劑部分(厚度：C)的厚度比(B/C)範圍在0.2至4之間，較佳在0.5至4之間，且最佳在0.5至3之間。若B/C低於0.2，則用於晶粒結合之該黏著劑部分變得太薄，且在取出程序中可能僅可取出一個晶粒。若B/C高於4，加工性可能過度降低。The die attach film of the present invention may also be configured such that the thickness ratio (B/C) of the pressure sensitive adhesive portion (thickness: B) to the adhesive portion (thickness: C) is in the range of 0.2 to 4 Preferably, it is between 0.5 and 4, and most preferably between 0.5 and 3. If the B/C is less than 0.2, the portion of the adhesive for grain bonding becomes too thin, and only one crystal grain may be taken out in the removal process. If the B/C is higher than 4, the workability may be excessively lowered.
只要構成本發明之晶粒接附膜之各層的厚度之間的關係符合上述條件，則構成每一層之材料的種類不特別限定。The kind of the material constituting each layer is not particularly limited as long as the relationship between the thicknesses of the respective layers constituting the die attach film of the present invention satisfies the above conditions.
例如，作為在本發明之晶粒接附膜中所包括之基底膜，可以使用在此領域中已知的典型塑膠膜或金屬箔片。塑膠膜之實例可以包括但不限於選自以下之一膜或二或更多膜之組合：烯烴膜，諸如聚丙烯膜或聚乙烯膜；聚酯膜，諸如聚對苯二甲酸乙二酯膜；聚碳酸酯膜；聚氯乙烯膜；聚四氟乙烯膜；聚丁烯膜；聚丁二烯膜；氯乙烯共聚物膜；乙烯-乙酸乙烯酯共聚物膜；乙烯-丙烯共聚物膜；及乙烯-丙烯酸乙酯共聚物膜。在此，“二或更多膜之組合”可以指明至少二種上述膜被疊置之膜或由上述樹脂之共聚物製成之膜。此基底膜也可以視需要進行典型之物理或化學處理，諸如消光處理、電量放電處理、底漆處理或交聯處理。For example, as the base film included in the die attach film of the present invention, a typical plastic film or metal foil known in the art can be used. Examples of the plastic film may include, but are not limited to, one selected from the group consisting of a film or a combination of two or more films: an olefin film such as a polypropylene film or a polyethylene film; a polyester film such as a polyethylene terephthalate film Polycarbonate film; polyvinyl chloride film; polytetrafluoroethylene film; polybutene film; polybutadiene film; vinyl chloride copolymer film; ethylene-vinyl acetate copolymer film; ethylene-propylene copolymer film; And an ethylene-ethyl acrylate copolymer film. Here, the "combination of two or more films" may indicate at least two films in which the above films are laminated or a film made of a copolymer of the above resins. This base film can also be subjected to typical physical or chemical treatments such as matting treatment, electric discharge treatment, primer treatment or cross-linking treatment as needed.
在本發明中，也可以使用二軸伸長性彼此相似之膜作為基底膜。更特別地，可以使用一種膜，其中垂直方向(MD)之伸長比例及水平方向(TD)之伸長比例之間的差是垂直方向(MD)伸長比例的10%或更低，且較佳地是5%或更低。In the present invention, a film having biaxial elongation similar to each other can also be used as the base film. More specifically, a film may be used in which a difference between an elongation ratio of a vertical direction (MD) and an elongation ratio of a horizontal direction (TD) is 10% or less of a vertical direction (MD) elongation ratio, and preferably It is 5% or lower.
基底膜之厚度不特別限定，只要彼滿足上述關係。例如，基底膜厚度範圍可以在約10μm至約200μm，較佳地約80μm至約130μm，更佳地約80μm至約100μm且最佳地約80μm至約90μm。若基底膜厚度少於10μm，則在切割程序中切割深度的調節變得不穩定。若基底膜厚度多於200μm，則在切割程序中可能產生很多毛邊，且伸長比例可能降低，以致使擴展錯誤。The thickness of the base film is not particularly limited as long as it satisfies the above relationship. For example, the base film thickness may range from about 10 μm to about 200 μm, preferably from about 80 μm to about 130 μm, more preferably from about 80 μm to about 100 μm, and most preferably from about 80 μm to about 90 μm. If the base film thickness is less than 10 μm, the adjustment of the cutting depth in the cutting process becomes unstable. If the base film thickness is more than 200 μm, many burrs may be generated in the cutting process, and the elongation ratio may be lowered to cause an extension error.
另外，在使用UV(紫外光)可固化之壓敏性黏著劑以供該壓敏性黏著劑部分的情況中，基底膜較佳具有優越之UV透射率。例如，基底膜之UV透射率可以是70%或更高，且較佳是90%或更高。Further, in the case where a UV (ultraviolet light) curable pressure-sensitive adhesive is used for the pressure-sensitive adhesive portion, the base film preferably has superior UV transmittance. For example, the base film may have a UV transmittance of 70% or more, and preferably 90% or more.
在晶粒接附膜中，構成該壓敏性黏著劑部分之壓敏性黏著劑之種類無實質上的限制。例如，該壓敏性黏著劑可以包括典型之UV可固化的壓敏性黏著劑或典型之熱可固化的壓敏性黏著劑。在使用UV可固化之壓敏性黏著劑的情況中，藉由從基底膜這一側照射UV可以降低壓敏性黏著劑的強度。在使用熱可固化之壓敏性黏著劑的情況中，藉由施加合適之熱可以降低壓敏性黏著劑強度。In the die attach film, the type of the pressure sensitive adhesive constituting the pressure sensitive adhesive portion is not substantially limited. For example, the pressure sensitive adhesive may comprise a typical UV curable pressure sensitive adhesive or a typical heat curable pressure sensitive adhesive. In the case of using a UV curable pressure-sensitive adhesive, the strength of the pressure-sensitive adhesive can be lowered by irradiating UV from the side of the base film. In the case of using a heat-curable pressure-sensitive adhesive, the pressure-sensitive adhesive strength can be lowered by applying a suitable heat.
在本發明中，鑒於取出可靠性，可以使用UV可固化之壓敏性黏著劑。在此情況中，該壓敏性黏著劑部分可以包括基底樹脂、UV可固化之化合物、光起始劑及交聯劑。在本發明中，當壓敏性黏著劑部分據稱是包括以上成分時，可以解釋為該壓敏性黏著劑部分是以一種含有以上成分之組成物或塗覆用溶液的經乾燥、半固化或固化之材料形式存在。In the present invention, a UV curable pressure-sensitive adhesive can be used in view of the take-out reliability. In this case, the pressure-sensitive adhesive portion may include a base resin, a UV curable compound, a photoinitiator, and a crosslinking agent. In the present invention, when the pressure-sensitive adhesive portion is said to include the above components, it can be explained that the pressure-sensitive adhesive portion is a dried, semi-cured portion containing a composition of the above components or a coating solution. Or a cured material exists.
基底樹脂之實例可以包括丙烯酸系樹脂。此丙烯酸系樹脂之重量平均分子量可以是100,000至1,500,000，且較佳是200,000至1,000,000。若重量平均分子量少於100,000，則可塗覆性或內聚力可能降低，且因此可能發生一些殘留材料在脫離時留在附著體(adherend)上或該壓敏性黏著劑被分解的現象。若重量平均分子量多於1,500,000時，基底樹脂可以阻礙UV可固化之化合物的反應，且因此壓敏性黏著劑之強度不能充分地降低。Examples of the base resin may include an acrylic resin. The acrylic resin may have a weight average molecular weight of from 100,000 to 1,500,000, and preferably from 200,000 to 1,000,000. If the weight average molecular weight is less than 100,000, the coatability or cohesive force may be lowered, and thus some residual material may remain on the adherend upon detachment or the pressure-sensitive adhesive may be decomposed. When the weight average molecular weight is more than 1,500,000, the base resin can hinder the reaction of the UV curable compound, and thus the strength of the pressure-sensitive adhesive cannot be sufficiently lowered.
例如，丙烯酸系樹脂可以是(甲基)丙烯酸酯單體及具有可交聯官能基團之單體的共聚物。For example, the acrylic resin may be a copolymer of a (meth) acrylate monomer and a monomer having a crosslinkable functional group.
在此，(甲基)丙烯酸酯單體之實例可以包括(甲基)丙烯酸烷酯，及特別地，具有含1至12個碳原子之烷基的單體，其實例可以包括選自以下之一者或二或更多者之組合：(甲基)丙烯酸戊酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸甲酯、(甲基)丙烯酸己酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸十二烷酯、及(甲基)丙烯酸癸酯。在具有該烷基之單體的情況中，該烷基之碳原子數目愈大，最終共聚物之玻璃轉換溫度愈低。因此，單體可以依照所要之玻璃轉換溫度及類似者而合適地選擇。Here, examples of the (meth) acrylate monomer may include alkyl (meth) acrylate, and particularly, a monomer having an alkyl group having 1 to 12 carbon atoms, and examples thereof may include those selected from the following One or a combination of two or more: amyl (meth)acrylate, n-butyl (meth)acrylate, ethyl (meth)acrylate, methyl (meth)acrylate, (meth)acrylate Ester, n-octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, dodecyl (meth)acrylate, and decyl (meth)acrylate . In the case of a monomer having the alkyl group, the larger the number of carbon atoms of the alkyl group, the lower the glass transition temperature of the final copolymer. Therefore, the monomer can be suitably selected in accordance with the desired glass transition temperature and the like.
另外，具有可交聯官能基團之單體的實例可以包括選自以下之一者或二或更多者之組合：具有羥基之單體、具有羧基之單體、具有氮之單體。含羥基之單體的實例可以包括但不限於(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、及類似者。含羧基之單體的實例可以包括但不限於(甲基)丙烯酸、及類似者。含氮之單體的實例可以包括但不限於(甲基)丙烯腈、N-乙烯基吡咯烷酮、N-乙烯基己內醯胺、及類似者。Further, examples of the monomer having a crosslinkable functional group may include a combination selected from one or a combination of two or more of: a monomer having a hydroxyl group, a monomer having a carboxyl group, a monomer having a nitrogen. Examples of the hydroxyl group-containing monomer may include, but are not limited to, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, and the like. Examples of the carboxyl group-containing monomer may include, but are not limited to, (meth)acrylic acid, and the like. Examples of the nitrogen-containing monomer may include, but are not limited to, (meth)acrylonitrile, N-vinylpyrrolidone, N-vinylcaprolactam, and the like.
丙烯酸系樹脂可以另外包括含有碳-碳雙鍵之低分子量化合物，諸如乙酸乙烯酯、苯乙烯或(甲基)丙烯腈作為共聚單體以改良其他功能，諸如相容性。The acrylic resin may additionally include a low molecular weight compound containing a carbon-carbon double bond, such as vinyl acetate, styrene or (meth)acrylonitrile as a comonomer to improve other functions such as compatibility.
在本發明中可用之UV可固化之化合物的種類無實質上的限制。例如，UV可固化之化合物可以是具有約500至約300,000重量平均分子量之多官能寡聚物化合物(例如多官能之丙烯酸酯)。熟習此技藝者明瞭：可以容易地選擇適於所要用途之寡聚物。The type of UV curable compound usable in the present invention is not substantially limited. For example, the UV curable compound can be a polyfunctional oligomer compound (e.g., a multifunctional acrylate) having an average molecular weight of from about 500 to about 300,000. It will be apparent to those skilled in the art that oligomers suitable for the intended use can be readily selected.
UV可固化之化合物含量相對於100重量份之基底樹脂是5至400重量份，較佳是10至200重量份。若UV可固化之化合物的量少於5重量份，則因為壓敏性黏著劑強度在固化後沒有充分地降低，故取出特性可能降低。若UV可固化之化合物的量多於400重量份，則壓敏性黏著劑之內聚力在UV光照射之前可能變得不足，或例如由離型膜脫離可能變得困難。The content of the UV curable compound is 5 to 400 parts by weight, preferably 10 to 200 parts by weight, per 100 parts by weight of the base resin. If the amount of the UV curable compound is less than 5 parts by weight, since the strength of the pressure-sensitive adhesive is not sufficiently lowered after curing, the take-out characteristics may be lowered. If the amount of the UV curable compound is more than 400 parts by weight, the cohesive force of the pressure-sensitive adhesive may become insufficient before irradiation of UV light, or may become difficult, for example, by detachment from the release film.
光起始劑之種類也無實質上的限制，且因此可以使用在此領域中已知之典型的光起始劑。光起始劑含量相對於100重量份之UV可固化之化合物可以是0.05至20重量份。若光起始劑的量少於0.05重量份，則因為藉由UV照射所致之固化反應不足，故取出特性可能降低。若光起始劑之量多於20重量份，則交聯反應可能在固化程序中於短的單元中發生，未反應之UV可固化之化合物可能產生而使殘留材料留在附著體上，或因壓敏性黏著力之過度降低而可能降低取出特性。The kind of photoinitiator is also not substantially limited, and thus a typical photoinitiator known in the art can be used. The photoinitiator content may be from 0.05 to 20 parts by weight relative to 100 parts by weight of the UV curable compound. If the amount of the photoinitiator is less than 0.05 parts by weight, since the curing reaction by UV irradiation is insufficient, the take-out characteristics may be lowered. If the amount of the photoinitiator is more than 20 parts by weight, the crosslinking reaction may occur in a short unit in the curing process, and an unreacted UV curable compound may be generated to leave the residual material on the attachment, or The extraction characteristics may be lowered due to an excessive decrease in pressure-sensitive adhesive force.
另外，在該壓敏性黏著劑部份中所包括且賦予黏著力及內聚力之交聯劑的種類也無實質上的限制。交聯劑可以是典型的化合物，諸如異氰酸酯化合物、吖環丙烷化合物、環氧化合物或金屬螯合物。交聯劑含量相對於100重量份之基底樹脂可以是2至40重量份，且較佳是2至20重量份。若交聯劑之量少於2重量份，則壓敏性黏著劑之內聚力可能變得不足。若交聯劑之量多於40重量份，則因UV光照射前膠黏強度不足，晶片可能被分散。Further, the type of the crosslinking agent included in the pressure-sensitive adhesive portion and imparting adhesive force and cohesive force is not substantially limited. The crosslinking agent may be a typical compound such as an isocyanate compound, an anthracene cyclopropane compound, an epoxy compound or a metal chelate compound. The content of the crosslinking agent may be 2 to 40 parts by weight, and preferably 2 to 20 parts by weight, per 100 parts by weight of the base resin. If the amount of the crosslinking agent is less than 2 parts by weight, the cohesive force of the pressure-sensitive adhesive may become insufficient. If the amount of the crosslinking agent is more than 40 parts by weight, the wafer may be dispersed due to insufficient adhesive strength before UV light irradiation.
另外，本發明之壓敏性黏著劑部分可以合適地包括膠黏劑，諸如松香、萜烯樹脂、酚樹脂、苯乙烯樹脂、脂族石油樹脂、芳香族石油樹脂或脂族-芳族共聚物石油樹脂。Further, the pressure-sensitive adhesive portion of the present invention may suitably comprise an adhesive such as rosin, terpene resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin or aliphatic-aromatic copolymer. Petroleum resin.
包括上述成分之壓敏性黏著劑部分的厚度無實質上的限制，只要彼滿足上述厚度關係。例如，該壓敏性黏著劑部分之厚度範圍可以在約10μm至約40μm之間，且較佳約20μm至約30μm之間。The thickness of the pressure-sensitive adhesive portion including the above components is not substantially limited as long as it satisfies the above thickness relationship. For example, the thickness of the pressure sensitive adhesive portion may range from about 10 μm to about 40 μm, and preferably from about 20 μm to about 30 μm.
在本發明中，在晶粒接附膜中所包括之黏著劑部分之構成成分也無實質上的限制。然而，用於晶粒結合之黏著劑部分較佳滿足半導體晶片及封裝中之其基材的翹曲及應力鬆弛等二特性。詳言之，半導體晶片典型具有約4ppm/℃之熱膨脹係數(CTE)，且半導體基材典型具有約10ppm/℃至約15ppm/℃之CTE。因CTE之間的差異，在程序中可能發生諸如翹曲或龜裂之失敗。因此，在本發明中所用之黏著劑部分較佳經配置以在高溫下具有優越之應力鬆弛性，同時防止產物之翹曲且顯現出優越物理性質，例如優越之黏著力、耐熱性及類似者。In the present invention, the constituent components of the adhesive portion included in the die attach film are also not substantially limited. However, the adhesive portion for die bonding preferably satisfies the two characteristics of warpage and stress relaxation of the substrate in the semiconductor wafer and package. In particular, semiconductor wafers typically have a coefficient of thermal expansion (CTE) of about 4 ppm/°C, and semiconductor substrates typically have a CTE of from about 10 ppm/°C to about 15 ppm/°C. Failures such as warpage or cracking may occur in the program due to differences between CTEs. Accordingly, the adhesive portion used in the present invention is preferably configured to have superior stress relaxation at high temperatures while preventing warpage of the product and exhibiting superior physical properties such as superior adhesion, heat resistance and the like. .
在本發明中，只要黏著劑部分滿足上述特性，則其成分無實質上的限制。例如，黏著劑部分可以包括一種黏著劑，其中二或更多種之具有彼此不同之彈性的樹脂被混合以致軟片段及硬片段共存於其中。藉此，該黏著劑部分可以具有能防止翹曲(此係由半導體晶片及其基材之間CTE之差異所引起)之應力鬆弛特性，以及優越物理特性，包括優越之黏著強度、耐熱性及類似者。In the present invention, as long as the adhesive portion satisfies the above characteristics, the composition thereof is not substantially limited. For example, the adhesive portion may include an adhesive in which two or more resins having different elasticity from each other are mixed so that a soft segment and a hard segment coexist therein. Thereby, the adhesive portion can have stress relaxation characteristics capable of preventing warpage (this is caused by a difference in CTE between the semiconductor wafer and its substrate), and superior physical properties including superior adhesion strength, heat resistance, and Similar.
例如，該黏著劑部分可以包括環氧樹脂、具有低彈性之高分子量樹脂及硬化劑。在本文中，當該黏著劑部分據稱是包括這些成分時，可以解釋為該黏著劑部分以含該等成分之組成物或塗覆用溶液之經乾燥的、半固化的或固化的材料形式存在。For example, the adhesive portion may include an epoxy resin, a high molecular weight resin having low elasticity, and a hardener. As used herein, when the adhesive portion is said to include these ingredients, it can be construed that the adhesive portion is in the form of a dried, semi-cured or cured material containing the composition of the ingredients or the coating solution. presence.
可用於本發明中之環氧樹脂可以包括此領域中已知之典型之用於黏著劑的環氧樹脂。例如，此環氧樹脂可含有二或更多個環氧基團於分子中且具有300至2,000之重量平均分子量。此環氧樹脂可以經由固化程序形成硬交聯結構，且因此顯現出優越黏著強度、耐熱性及機械力。更特別地，在本發明中所用之環氧樹脂較佳具有180至1,000之平均環氧當量。若環氧樹脂之平均環氧當量少於180，則晶粒接附膜整體因過高之交聯密度可能顯現出硬特性。若環氧樹脂之平均環氧當量多於1,000，則耐熱性可能降低。The epoxy resin which can be used in the present invention may include an epoxy resin which is typically used in the art for an adhesive. For example, the epoxy resin may contain two or more epoxy groups in the molecule and have a weight average molecular weight of 300 to 2,000. This epoxy resin can form a hard crosslinked structure via a curing process, and thus exhibits superior adhesion strength, heat resistance, and mechanical force. More specifically, the epoxy resin used in the present invention preferably has an average epoxy equivalent of from 180 to 1,000. If the average epoxy equivalent of the epoxy resin is less than 180, the entire die attach film may exhibit hard characteristics due to an excessively high crosslinking density. If the epoxy resin has an average epoxy equivalent of more than 1,000, heat resistance may be lowered.
此環氧樹脂之實例可以包括但不限於選自以下之一或二或更多者：雙官能之環氧樹脂，諸如雙酚A環氧樹脂及雙酚F環氧樹脂；及具有三或更多官能基團之多官能環氧樹脂，諸如甲酚酚醛清漆環氧樹脂、酚酚醛清漆環氧樹脂、四官能環氧樹脂；聯苯型環氧樹脂；三酚甲烷環氧樹脂、經烷基改質之三酚甲烷環氧樹脂、萘環氧樹脂、二環戊二烯環氧樹脂、及經二環戊二烯改質之酚環氧樹脂。Examples of the epoxy resin may include, but are not limited to, one or two or more selected from the group consisting of difunctional epoxy resins such as bisphenol A epoxy resin and bisphenol F epoxy resin; and having three or more Multifunctional epoxy resin, such as cresol novolac epoxy resin, phenol novolac epoxy resin, tetrafunctional epoxy resin; biphenyl type epoxy resin; trisphenol methane epoxy resin, alkyl group Modified trisphenol methane epoxy resin, naphthalene epoxy resin, dicyclopentadiene epoxy resin, and phenol epoxy resin modified by dicyclopentadiene.
特別地，較佳使用雙官能環氧樹脂與多官能環氧樹脂混合之混合樹脂以作為本發明中之環氧樹脂。如本文中所用之“多官能環氧樹脂”一詞係指具有三或更多官能基團之環氧樹脂。通常，雙官能環氧樹脂具有優越可撓性、在高溫下之流動性及類似者，但具有不良的耐熱性及固化速度。相對地，具有三或更多官能基團之多官能環氧樹脂具有快速的固化速度，且因高的交聯密度而顯出優越耐熱性，但可撓性及流動性不良。因此，當合適地混合且使用二種類之樹脂時，可能控制該黏著劑部分之彈性模數及膠黏性，且在切割程序中抑制晶片分散或毛邊發生。In particular, a mixed resin in which a bifunctional epoxy resin and a polyfunctional epoxy resin are mixed is preferably used as the epoxy resin in the present invention. The term "multifunctional epoxy resin" as used herein refers to an epoxy resin having three or more functional groups. Generally, difunctional epoxy resins have superior flexibility, fluidity at high temperatures, and the like, but have poor heat resistance and curing speed. In contrast, a polyfunctional epoxy resin having three or more functional groups has a rapid curing speed and exhibits excellent heat resistance due to a high crosslinking density, but has poor flexibility and fluidity. Therefore, when two kinds of resins are suitably mixed and used, it is possible to control the elastic modulus and adhesiveness of the adhesive portion, and suppress wafer dispersion or burrs in the cutting process.
當使用混合之樹脂時，雙官能環氧樹脂含量相對於100重量份之多官能環氧樹脂，較佳可以是10至50重量份。若雙官能環氧樹脂之量少於10重量份，則黏著強度在高溫下可因低的膠黏性而降低。若雙官能環氧樹脂之量多於50重量份，則處置特性可能降低或在切割程序中毛邊發生可能增加。When a mixed resin is used, the difunctional epoxy resin content may preferably be 10 to 50 parts by weight based on 100 parts by weight of the polyfunctional epoxy resin. If the amount of the bifunctional epoxy resin is less than 10 parts by weight, the adhesive strength may be lowered at a high temperature due to low adhesiveness. If the amount of the bifunctional epoxy resin is more than 50 parts by weight, the handling characteristics may be lowered or the occurrence of burrs may increase during the cutting process.
另外在該黏著劑部分中，環氧樹脂含量相對於100重量份之具有低彈性的高分子量樹脂可以是10至200重量份，較佳是20至100重量份。若環氧樹脂之量少於10重量份，則可能降低耐熱性及處置特性。若環氧樹脂之量多於200重量份，則可能降低加工性及可靠性。Further, in the adhesive portion, the epoxy resin content may be 10 to 200 parts by weight, preferably 20 to 100 parts by weight, per 100 parts by weight of the high molecular weight resin having low elasticity. If the amount of the epoxy resin is less than 10 parts by weight, heat resistance and handling characteristics may be lowered. If the amount of the epoxy resin is more than 200 parts by weight, workability and reliability may be lowered.
具有低彈性之高分子量樹脂可以形成軟片段於黏著劑內，以在高溫下提供應力鬆弛特性。在此，可以使用任何樹脂以作為該高分子量樹脂，只要彼與環氧樹脂摻合，在膜形成時不引起破裂，在交聯結構形成後顯現出黏彈性，且具有與其他成分之優越相容性及優越儲存安定性。The high molecular weight resin having low elasticity can form a soft segment in the adhesive to provide stress relaxation characteristics at high temperatures. Here, any resin may be used as the high molecular weight resin as long as it is blended with the epoxy resin, does not cause cracking at the time of film formation, exhibits viscoelasticity after formation of the crosslinked structure, and has superior phase with other components. Capacitive and superior storage stability.
例如，該高分子量樹脂可以是玻璃轉換溫度為-20℃至40℃，且較佳是-10℃至30℃的樹脂。若該高分子量樹脂之玻璃轉換溫度是低於-20℃，則因過高之流動性，處置特性可能變差。若高分子量樹脂之玻璃轉換溫度高於40℃，則在低溫下與晶圓相關之黏著強度可能降低，且因此晶片在切割程序中可能被分散，或冷卻用水可能滲透於晶片之間。For example, the high molecular weight resin may be a resin having a glass transition temperature of -20 ° C to 40 ° C, and preferably -10 ° C to 30 ° C. If the glass transition temperature of the high molecular weight resin is lower than -20 ° C, handling characteristics may be deteriorated due to excessive fluidity. If the glass transition temperature of the high molecular weight resin is higher than 40 ° C, the adhesion strength associated with the wafer at low temperatures may be lowered, and thus the wafer may be dispersed in the cutting process, or the cooling water may penetrate between the wafers.
另外，該高分子量樹脂可以具有100,000至1,000,000，及較佳地200,000至900,000之重量平均分子量。若該高分子量樹脂之重量平均分子量少於100,000，則可能降低處置特性及耐熱性，且因此當填充電路時流動性之控制可能變困難。若高分子量樹脂之重量平均分子量多於1,000,000時，則因彈性模數過度增加，電路填充性及可靠性可能被降低。Further, the high molecular weight resin may have a weight average molecular weight of from 100,000 to 1,000,000, and preferably from 200,000 to 900,000. If the weight average molecular weight of the high molecular weight resin is less than 100,000, handling characteristics and heat resistance may be lowered, and thus control of fluidity may become difficult when the circuit is filled. If the weight average molecular weight of the high molecular weight resin is more than 1,000,000, the circuit filling property and reliability may be lowered due to an excessive increase in the modulus of elasticity.
具有低彈性之高分子量樹脂的詳細種類無實質上的限制，只要彼滿足上述特性。例如，該高分子量樹脂可以包括但不限於選自以下之一者或二或更多者之組合：聚醯亞胺、聚醚醯亞胺、聚酯醯亞胺、聚醯胺、聚醚碸、聚醚酮、聚烯烴、聚氯乙烯、苯氧樹脂、反應性丙烯腈丁二烯橡膠及丙烯酸系樹脂。The detailed type of the high molecular weight resin having low elasticity is not substantially limited as long as it satisfies the above characteristics. For example, the high molecular weight resin may include, but is not limited to, one or a combination of two or more selected from the group consisting of polyimine, polyetherimide, polyesterimide, polyamine, polyether oxime , polyether ketone, polyolefin, polyvinyl chloride, phenoxy resin, reactive acrylonitrile butadiene rubber and acrylic resin.
在此，丙烯酸系樹脂之具體實例可以是包括(甲基)丙烯酸及其衍生物作為共聚單體之丙烯酸系共聚物。在此，(甲基)丙烯酸及其衍生物之實例可以包括(甲基)丙烯酸；含有具有1至12個碳原子之烷基的(甲基)丙烯酸烷酯，諸如(甲基)丙烯酸甲酯或(甲基)丙烯酸乙酯；(甲基)丙烯腈或(甲基)丙烯醯胺；及其他可共聚合之單體。Here, a specific example of the acrylic resin may be an acrylic copolymer including (meth)acrylic acid and a derivative thereof as a comonomer. Here, examples of the (meth)acrylic acid and derivatives thereof may include (meth)acrylic acid; alkyl (meth)acrylate containing an alkyl group having 1 to 12 carbon atoms, such as methyl (meth)acrylate Or ethyl (meth)acrylate; (meth)acrylonitrile or (meth)acrylamide; and other copolymerizable monomers.
丙烯酸系樹脂也可以包括一或二或更多種官能基團，諸如縮水甘油基、羥基、羧基及胺基。可以藉由將單體(諸如(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸羥酯、(甲基)丙烯酸羥乙酯或(甲基)丙烯酸羧酯)共聚合，可將此官能基團導入。The acrylic resin may also include one or two or more functional groups such as a glycidyl group, a hydroxyl group, a carboxyl group, and an amine group. The functional group can be obtained by copolymerizing a monomer such as glycidyl (meth) acrylate, hydroxy (meth) acrylate, hydroxyethyl (meth) acrylate or carboxy (meth) acrylate. Group import.
當丙烯酸系樹脂含有官能基團時，官能基團之較佳含量相對於丙烯酸系樹脂總重量可以是0.5至10重量份。若官能基團之量少於0.5重量份，則難以確保黏著強度。若官能基團之量多於10重量份，則加工性可能降低或凝膠化可能發生。When the acrylic resin contains a functional group, the preferred content of the functional group may be from 0.5 to 10 parts by weight based on the total weight of the acrylic resin. If the amount of the functional group is less than 0.5 part by weight, it is difficult to ensure the adhesion strength. If the amount of the functional group is more than 10 parts by weight, workability may be lowered or gelation may occur.
可包括於本發明該黏著劑部分的硬化劑並無實質上的限制，只要彼可與該環氧樹脂及/或該具有低彈性之高分子量樹脂反應以形成交聯結構即可。在此，例如，硬化劑可以是可與此二成分同時反應以形成交聯結構者。此硬化劑可以在黏著劑中形成分別具有軟片段及硬片段之交聯結構，藉此改良耐熱性。同時，硬化劑可在二片段之介面上作為二片段之交聯劑以改良半導體封裝之可靠性。The hardener which may be included in the adhesive portion of the present invention is not substantially limited as long as it can react with the epoxy resin and/or the low-molecular-weight high molecular weight resin to form a crosslinked structure. Here, for example, the hardener may be one that can react with the two components simultaneously to form a crosslinked structure. The hardener can form a crosslinked structure having a soft segment and a hard segment, respectively, in the adhesive, thereby improving heat resistance. At the same time, the hardener can act as a cross-linker for the two segments at the interface of the two segments to improve the reliability of the semiconductor package.
在此，例如，硬化劑可以是含有二或更多個羥基於一分子中且具有在100至1,000範圍內之羥基值的酚樹脂。若羥基值少於100，黏著劑部分之應力鬆弛特性可被降低。若羥基值多於1,000，則因交聯密度減少而使耐熱性變差。Here, for example, the hardener may be a phenol resin containing two or more hydroxyl groups in one molecule and having a hydroxyl value in the range of 100 to 1,000. If the hydroxyl value is less than 100, the stress relaxation characteristics of the adhesive portion can be lowered. When the hydroxyl value is more than 1,000, the heat resistance is deteriorated due to a decrease in the crosslinking density.
另外，酚樹脂較佳具有50℃至150℃之軟化點。若酚樹脂之軟化點低於50℃，則處置特性可被降低。若酚樹脂之軟化點高於150℃，則黏著劑部分及晶圓之間的黏著強度可被降低。Further, the phenol resin preferably has a softening point of from 50 ° C to 150 ° C. If the softening point of the phenol resin is lower than 50 ° C, the handling characteristics can be lowered. If the softening point of the phenol resin is higher than 150 ° C, the adhesion strength between the adhesive portion and the wafer can be lowered.
酚樹脂之實例可以包括但不限於選自雙酚A樹脂、酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、雙酚A酚醛清漆樹脂、酚芳烷基樹脂、多官能酚醛清漆樹脂、二環戊二烯酚酚醛清漆樹脂、胺基三嗪酚酚醛清漆樹脂、聚丁二烯酚酚醛清漆樹脂及聯苯型樹脂之一或二或更多者。Examples of the phenol resin may include, but are not limited to, selected from the group consisting of bisphenol A resin, phenol novolak resin, cresol novolak resin, bisphenol A novolak resin, phenol aralkyl resin, polyfunctional novolac resin, dicyclopentane One or two or more of a phenol novolac resin, an aminotriazine phenol novolak resin, a polybutadiene phenol novolak resin, and a biphenyl type resin.
在本發明之黏著劑部分中，硬化劑含量相對於100重量份之環氧樹脂可以是30至100重量份，且較佳是50至90重量份。若硬化劑之量少於30重量份，則在固化程序中未反應之環氧樹脂之量可以增加，且因此耐熱性降低，或需要高溫或長時間之程序以固化未反應之環氧樹脂。若硬化劑之量多於100重量份，則因未反應之羥基可使水分吸收性、儲存安定性、及介電特性變差。In the adhesive portion of the present invention, the hardener content may be 30 to 100 parts by weight, and preferably 50 to 90 parts by weight, per 100 parts by weight of the epoxy resin. If the amount of the hardener is less than 30 parts by weight, the amount of the unreacted epoxy resin in the curing process may increase, and thus the heat resistance may be lowered, or a high-temperature or long-term procedure may be required to cure the unreacted epoxy resin. When the amount of the curing agent is more than 100 parts by weight, moisture absorbing property, storage stability, and dielectric properties may be deteriorated by the unreacted hydroxyl group.
另外，本發明之黏著劑部分可以另外包括固化加速劑以使固化反應加速。固化加速劑可以包括選自咪唑化合物、三苯基基膦類(TPP)或三級胺化合物之一或二或更多者，較佳是咪唑化合物。In addition, the adhesive portion of the present invention may additionally include a curing accelerator to accelerate the curing reaction. The curing accelerator may include one or two or more selected from the group consisting of an imidazole compound, a triphenylphosphine (TPP) or a tertiary amine compound, preferably an imidazole compound.
咪唑化合物之實例可以包括但不限於選自2-甲基咪唑(2MZ)、2-乙基-4-甲基咪唑(2E4MZ)、2-苯基咪唑(2PZ)、1-氰乙基-2-苯基咪唑(2PZ-CN)、2-十一烷基咪唑(C11Z)、2-十七烷基咪唑(C17Z)、及1-氰乙基-2-苯基咪唑苯偏三酸酯(2PZ-CNS)之一或二或更多者。Examples of the imidazole compound may include, but are not limited to, selected from the group consisting of 2-methylimidazole (2MZ), 2-ethyl-4-methylimidazole (2E4MZ), 2-phenylimidazole (2PZ), 1-cyanoethyl-2 -Phenyl imidazole (2PZ-CN), 2-undecylimidazole (C11Z), 2-heptadecylimidazole (C17Z), and 1-cyanoethyl-2-phenylimidazolium trimellitate ( 2PZ-CNS) One or two or more.
固化加速劑含量相對於100重量份環氧樹脂可以是0.1至10重量份，較佳是0.2至5重量份。若固化加速劑之量少於0.1重量份，則耐熱性或黏著力可被降低。若固化加速劑之量多於10重量份，則固化反應發生地太突然，且因此儲存安定性被降低。The curing accelerator content may be 0.1 to 10 parts by weight, preferably 0.2 to 5 parts by weight, per 100 parts by weight of the epoxy resin. If the amount of the curing accelerator is less than 0.1 parts by weight, heat resistance or adhesion can be lowered. If the amount of the curing accelerator is more than 10 parts by weight, the curing reaction occurs too suddenly, and thus the storage stability is lowered.
另外，黏著劑部分可以另外地包括無機填料(鑒於處理特性)、耐熱性及熔化黏度。無機填料之實例可以包括但不限於選自以下之一或二或更多者：矽石、氫氧化鋁、碳酸鈣、氫氧化鎂、氧化鋁、滑石及氮化鋁。In addition, the adhesive portion may additionally include an inorganic filler (in view of handling characteristics), heat resistance, and melt viscosity. Examples of the inorganic filler may include, but are not limited to, one or two or more selected from the group consisting of vermiculite, aluminum hydroxide, calcium carbonate, magnesium hydroxide, aluminum oxide, talc, and aluminum nitride.
無機填料可以具有0.001μm至10μm，及較佳地0.005μm至1μm之平均粒子直徑。若無機填料之粒子直徑小於0.001μm，則填料在黏著劑部分中附聚，或外觀可能令人不滿意。若無機填料之粒子直徑大於10μm，則當進行熱壓製時填料可以突出黏著劑部分表面且晶片可被破壞，或黏著劑性質之加強效果可被降低。The inorganic filler may have an average particle diameter of from 0.001 μm to 10 μm, and preferably from 0.005 μm to 1 μm. If the particle diameter of the inorganic filler is less than 0.001 μm, the filler may agglomerate in the adhesive portion, or the appearance may be unsatisfactory. If the particle diameter of the inorganic filler is larger than 10 μm, the filler may protrude from the surface of the adhesive portion and the wafer may be broken when hot pressing, or the reinforcing effect of the adhesive property may be lowered.
無機填料含量相對於100重量份之在黏著劑中的全部樹脂可以是0.5至100重量份，及較佳是5至50重量份。若無機填料之量少於0.5重量份，則因無機填料之添加所得之耐熱性及處置特性的改良效果可能不足。若無機填料之量多於100重量份，則與基材相關之加工性及黏著強度可被降低。The inorganic filler content may be from 0.5 to 100 parts by weight, and preferably from 5 to 50 parts by weight, per 100 parts by weight of the total of the resin in the adhesive. When the amount of the inorganic filler is less than 0.5 part by weight, the effect of improving heat resistance and handling characteristics due to the addition of the inorganic filler may be insufficient. If the amount of the inorganic filler is more than 100 parts by weight, the workability and adhesion strength associated with the substrate can be lowered.
另外，本發明之黏著劑部分可另外地包括偶合劑。藉此，可能改良樹脂成分及晶圓或填料之間之密合黏著性，或防水及防熱特性。偶合劑之實例可以包括但不限於選自矽烷偶合劑、氧化鈦偶合劑及鋁偶合劑之一或二或更多者。Further, the adhesive portion of the present invention may additionally include a coupling agent. Thereby, it is possible to improve the adhesion between the resin component and the wafer or the filler, or the waterproof and heat-proof properties. Examples of the coupling agent may include, but are not limited to, one or two or more selected from the group consisting of a decane coupling agent, a titanium oxide coupling agent, and an aluminum coupling agent.
偶合劑含量相對於100重量份之樹脂成分可以是0.05至15重量份，且較佳是0.1至10重量份。若偶合劑之量少於0.05重量份，則密合黏著性之改良可能不足。若偶合劑之量多於15重量份，則可產生孔隙或可降低耐熱性。The coupling agent content may be 0.05 to 15 parts by weight, and preferably 0.1 to 10 parts by weight, per 100 parts by weight of the resin component. If the amount of the coupling agent is less than 0.05 parts by weight, the improvement in adhesion and adhesion may be insufficient. If the amount of the coupling agent is more than 15 parts by weight, voids may be generated or heat resistance may be lowered.
在此，包括上述成分之黏著劑部分在130℃下可以具有範圍在50gf至150gf之間的膠黏力，及在150℃下具有4.0MPa或更多之切變強度。Here, the adhesive portion including the above components may have an adhesive force ranging from 50 gf to 150 gf at 130 ° C and a shear strength of 4.0 MPa or more at 150 ° C.
當黏著劑部分滿足以上物性時，優點是在於：可以在沒有預先固化程序(此典型係在晶粒接附程序之後進行)之狀況下，進行金屬線結合及模製程序。以此方式，當黏著劑部分符合這些條件時，可能防止晶片在隨後之程序中脫離、移動或偏離，卻在半導體封裝程序無預先固化程序。因此，可能改良膜之包埋性，減少不合格諸如晶圓之翹曲，及增加生產力。When the adhesive portion satisfies the above physical properties, there is an advantage in that the wire bonding and molding process can be performed without a pre-curing process (this is typically performed after the die attaching process). In this manner, when the adhesive portion meets these conditions, it is possible to prevent the wafer from being detached, moved or deviated in subsequent processes, but without pre-cure procedures in the semiconductor package process. Therefore, it is possible to improve the embedding property of the film, reduce the occurrence of defects such as warpage of the wafer, and increase productivity.
若黏著劑部分之膠黏力少於50gf，則在晶粒結合程序中可能發生晶片之脫離、移動或偏離。若黏著劑部分之膠黏力多於150gf，則在該程序中產生很多毛邊，或可以降低處置特性或耐熱性。另外，若黏著劑部分之切變強度少於4.0，則在半導體程序中可以發生晶片之移動，且因此可以降低半導體封裝之可靠性。If the adhesive strength of the adhesive portion is less than 50 gf, detachment, movement or deviation of the wafer may occur in the grain bonding process. If the adhesive portion has a tack of more than 150 gf, a lot of burrs are generated in the procedure, or the handling characteristics or heat resistance can be lowered. In addition, if the shear strength of the adhesive portion is less than 4.0, the movement of the wafer can occur in the semiconductor program, and thus the reliability of the semiconductor package can be reduced.
測量膠黏力及切變強度之方法在本發明中無實質上的限制，且因此可以是在此領域中所進行之典型方法。在此，例如經由使用組織分析儀及球型探針的方法，可以測量膠黏力。使用在此領域中典型之測量裝置(諸如球切變/接線拉動測試機，DAGE 4000系列)，也可以測量切變強度。The method of measuring the adhesive strength and the shear strength is not substantially limited in the present invention, and thus may be a typical method performed in the field. Here, the adhesive force can be measured, for example, via a method using a tissue analyzer and a ball probe. The shear strength can also be measured using a typical measuring device (such as a ball shear/wire pull tester, DAGE 4000 series) that is typical in this field.
如上述之黏著劑部分的厚度在本發明中無實質上的限制，只要黏著劑部分滿足上述關係。例如，黏著劑部分之厚度範圍可以在1μm至200μm之間，較佳地15μm至100μm之間，更佳地20μm至100μm之間，但更佳地20μm至70μm之間，且最佳地20μm至60μm之間。若黏著劑部分之厚度少於1μm，則在高溫下之應力鬆弛特性及包埋性可被降低。若黏著劑部分之厚度多於200μm，則經濟效率降低。The thickness of the adhesive portion as described above is not substantially limited in the present invention as long as the adhesive portion satisfies the above relationship. For example, the thickness of the adhesive portion may range from 1 μm to 200 μm, preferably from 15 μm to 100 μm, more preferably from 20 μm to 100 μm, but more preferably from 20 μm to 70 μm, and most preferably from 20 μm to Between 60μm. If the thickness of the adhesive portion is less than 1 μm, the stress relaxation property and the embedding property at a high temperature can be lowered. If the thickness of the adhesive portion is more than 200 μm, the economic efficiency is lowered.
另外，本發明之晶粒接附膜可以另外地包括形成在黏著劑部分上之離型膜。Further, the die attach film of the present invention may additionally include a release film formed on the adhesive portion.
離型膜之實例可以包括但不限於選自聚對苯二甲酸乙二酯膜、聚四氟乙烯膜、聚乙烯膜、聚丙烯膜、聚丁烯膜、聚丁二烯膜、氯乙烯共聚物膜及聚醯亞胺膜之一或二或更多者。Examples of the release film may include, but are not limited to, a polyethylene terephthalate film, a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a vinyl chloride copolymer. One or two or more of the film and the polyimide film.
此離型膜之表面可以進行一種使用選自以醇酸樹脂、聚矽氧、氟、不飽和酯、聚烯烴及蠟為底質之離型劑之一或二或更多者的離型處理。其中，具有高耐熱性之以醇酸樹脂、聚矽氧或氟為底質的離型劑是特佳的。The surface of the release film may be subjected to a release treatment using one or two or more of a release agent selected from the group consisting of an alkyd resin, a polyoxymethylene, a fluorine, an unsaturated ester, a polyolefin, and a wax. . Among them, a release agent having an alkyd resin, polyoxymethylene or fluorine as a substrate having high heat resistance is particularly preferable.
離型膜典型地可以形成約10μm至約500μm，且較佳地約20μm至200μm的厚度。若離型膜之厚度少於10μm，則離型膜在塗覆之後可能在固化程序中過度地伸長。若離型膜之厚度多於500μm，則經濟效率降低。The release film may typically form a thickness of from about 10 μm to about 500 μm, and preferably from about 20 μm to 200 μm. If the thickness of the release film is less than 10 μm, the release film may be excessively elongated in the curing process after coating. If the thickness of the release film is more than 500 μm, the economic efficiency is lowered.
製造晶粒接附膜之方法不特別限定。例如，可以使用連續形成壓敏性黏著劑部分、黏著劑部分、及離型膜在基底膜上的方法；或分開地形成壓敏性黏著劑部分及黏著劑部分、而後將彼互相層合之方法。The method of producing the die attach film is not particularly limited. For example, a method of continuously forming a pressure-sensitive adhesive portion, an adhesive portion, and a release film on the base film may be used; or a pressure-sensitive adhesive portion and an adhesive portion may be separately formed, and then laminated to each other method.
在此方法中，形成黏著劑部分之方法無實質上的限制。例如，可以經由包括以下步驟之方法形成黏著劑部分：溶解或分散構成黏著劑之每一成分於溶劑中以製備樹脂清漆的第一步驟；施加樹脂清漆至基底膜或離型膜的第二步驟；及將覆蓋樹脂清漆之基底膜或離型膜加熱以除去溶劑之第三步驟。In this method, the method of forming the adhesive portion is not substantially limited. For example, the adhesive portion may be formed by a method including the following steps: a first step of dissolving or dispersing each component constituting the adhesive in a solvent to prepare a resin varnish; and a second step of applying a resin varnish to the base film or the release film And a third step of heating the base film or the release film covering the resin varnish to remove the solvent.
在第一步驟中，使用構成黏著劑部分之成分製造樹脂清漆。在此，溶劑典型可以使用選自甲基乙基酮(MEK)、丙酮、甲苯、二甲基甲醯胺(DMF)、甲基纖維素(MCS)、四氫呋喃(THF)、N-甲基吡咯烷酮(NMP)及乙酸乙酯之一者或二或更多者之混合物。在此，在考慮基底膜之耐熱性時，可以使用低沸點溶劑，或可以使用高沸點溶劑以改良塗覆性。In the first step, a resin varnish is produced using the components constituting the adhesive portion. Here, the solvent can be typically selected from the group consisting of methyl ethyl ketone (MEK), acetone, toluene, dimethylformamide (DMF), methyl cellulose (MCS), tetrahydrofuran (THF), and N-methylpyrrolidone. One of (NMP) and ethyl acetate or a mixture of two or more. Here, in consideration of heat resistance of the base film, a low boiling point solvent may be used, or a high boiling point solvent may be used to improve coatability.
在第一步驟中，也可以使用填料以減少處理時間且改良分散性。在此情況中，第一步驟可以包括(1)混合溶劑、填料及偶合劑，(2)將環氧樹脂及硬化劑添加且混合至步驟(1)之混合物，及(3)混合具有低彈性之高分子量樹脂及固化加速劑與步驟(2)之混合物。In the first step, fillers can also be used to reduce processing time and improve dispersibility. In this case, the first step may include (1) mixing a solvent, a filler, and a coupling agent, (2) adding and mixing the epoxy resin and the hardener to the mixture of the step (1), and (3) mixing with low elasticity. a mixture of the high molecular weight resin and the curing accelerator and the step (2).
在此，可得之填料的實例可以包括選自球磨機、珠粒磨機、三滾筒及高速分散機之一者或二或更多者之組合。球或珠粒之材料可以包括玻璃、氧化鋁或氧化鋯。特別地，在粒子分散性方面，二氧化鋯製之球或珠粒是較佳的。Here, examples of the available filler may include one selected from the group consisting of a ball mill, a bead mill, a three-roller, and a high-speed disperser, or a combination of two or more. The material of the balls or beads may comprise glass, alumina or zirconia. In particular, balls or beads made of zirconium dioxide are preferred in terms of particle dispersibility.
在形成黏著劑部分之第二步驟中，將所製備之樹脂清漆施加至基底膜或離型膜。施加方法無實質上的限制。例如，可以使用刀式塗覆、滾筒塗覆、噴灑塗覆、凹版印刷塗覆、簾式塗覆、間歇式塗覆、或唇式塗覆。In the second step of forming the adhesive portion, the prepared resin varnish is applied to the base film or the release film. There are no substantial limitations on the method of application. For example, knife coating, roller coating, spray coating, gravure coating, curtain coating, batch coating, or lip coating may be used.
在形成黏著劑部分之第三步驟中，將塗覆樹脂清漆之基底膜或離型膜加熱以除去溶劑。第三步驟較佳可以在70℃至250℃之溫度下進行5分鐘至20分鐘，但不限於這些條件。In the third step of forming the adhesive portion, the resin varnish-coated base film or release film is heated to remove the solvent. The third step is preferably carried out at a temperature of from 70 ° C to 250 ° C for 5 minutes to 20 minutes, but is not limited to these conditions.
另外，形成壓敏性黏著劑部分之方法在本發明中無實質上的限制。例如，壓敏性黏著劑部分係藉以下方式形成：溶解或分散諸如丙烯酸系樹脂、交聯劑、UV可固化之化合物及光起始劑之成分於溶劑中以製備樹脂清漆，且施加並乾燥所製備之樹脂清漆至基底膜(或離型膜)。Further, the method of forming the pressure-sensitive adhesive portion is not substantially limited in the present invention. For example, the pressure-sensitive adhesive portion is formed by dissolving or dispersing a component such as an acrylic resin, a crosslinking agent, a UV curable compound, and a photoinitiator in a solvent to prepare a resin varnish, and applying and drying The prepared resin varnish is applied to the base film (or release film).
層合黏著劑部分及壓敏性黏著劑部分之方法無實質上的限制。例如，層合方法可以是熱滾壓層合方法或層合加壓方法。在連續程序之可能性及效率方面，熱滾壓層合方法是較佳的。熱滾壓層合方法可以在0.1Kgf/cm2至10Kgf/cm2之壓力及10℃至100℃之溫度下進行。The method of laminating the adhesive portion and the pressure-sensitive adhesive portion is not substantially limited. For example, the lamination method may be a hot roll lamination method or a lamination press method. A hot roll lamination method is preferred in terms of the possibilities and efficiency of the continuous process. The hot rolling lamination method can be carried out at a pressure of from 0.1 Kgf/cm 2 to 10 Kgf/cm 2 and at a temperature of from 10 ° C to 100 ° C.
本發明也關於一種包括晶粒接附膜之半導體晶圓，其中晶粒接附膜之黏著劑部分接附至晶圓之一個表面，且晶粒接附膜之基底膜或壓敏性黏著劑部分固定至晶圓之環框。The invention also relates to a semiconductor wafer comprising a die attach film, wherein an adhesive portion of the die attach film is attached to one surface of the wafer, and the base film or pressure sensitive adhesive of the die attach film Partially fixed to the ring frame of the wafer.
藉由在10℃至180℃溫度下將晶粒接附膜之黏著劑部分接附(層合)至半導體晶圓背面，且將基底膜或壓敏性黏著劑部分固定至晶圓之環框，可以製造半導體晶圓。Attaching (laminating) the adhesive portion of the die attach film to the back surface of the semiconductor wafer at a temperature of 10 ° C to 180 ° C, and fixing the base film or the pressure sensitive adhesive portion to the ring frame of the wafer , can manufacture semiconductor wafers.
本發明也關於一種半導體封裝方法，其包括切割本發明之半導體晶圓的第一步驟及取出經由第一步驟所製造之半導體晶片的第二步驟。The invention also relates to a semiconductor package method comprising a first step of dicing a semiconductor wafer of the invention and a second step of removing a semiconductor wafer fabricated via the first step.
在以上步驟之後，半導體封裝方法可以另外包括將取出之半導體晶片結合至半導體基材的第三步驟，及金屬線結合半導體晶片及半導體基材之第四步驟，及使用包封材料模製半導體晶片之第五步驟。After the above steps, the semiconductor packaging method may additionally include a third step of bonding the removed semiconductor wafer to the semiconductor substrate, and a fourth step of bonding the metal line to the semiconductor wafer and the semiconductor substrate, and molding the semiconductor wafer using the encapsulation material. The fifth step.
本發明之半導體封裝方法將詳述於下。在半導體封裝方法中，使用切割裝置，將接附有上述晶粒接附膜之半導體晶圓切成分開的晶片。在此之後，經由用於施加UV光或熱之手段將壓敏性黏著劑部分固化。在黏著劑部分及壓敏性黏著劑部分之間的黏著強度在固化程序中減低，以致晶片容易在隨後程序中取出。在此情況中，若需要，進行擴展晶粒接附膜之擴展方法，藉此，可以容易地藉由擴展晶片之間的間隔且在黏著劑部分及壓敏性黏著劑部分之間的介面上產生位移而進行取出步驟。The semiconductor packaging method of the present invention will be described in detail below. In the semiconductor packaging method, a wafer in which the semiconductor wafer to which the die attach film is attached is sliced is cut using a dicing device. After that, the pressure-sensitive adhesive is partially cured by means for applying UV light or heat. The adhesion strength between the adhesive portion and the pressure-sensitive adhesive portion is reduced in the curing process so that the wafer is easily taken out in a subsequent process. In this case, if necessary, an extension method of expanding the die attach film is performed, whereby the interval between the wafers and the interface between the adhesive portion and the pressure sensitive adhesive portion can be easily expanded. The displacement step is performed to perform the removal step.
當晶片在以上狀態中經取出時，半導體晶圓及黏著劑部分由壓敏性黏著劑部分剝離，以致可獲得僅接附有黏著劑層之晶片。所得之接附有黏著劑層的晶片經接附至半導體基材。典型地，在以下條件將晶片接附：100℃至180℃之溫度，0.5秒至3秒之時間，及0.5kgf/cm2至2kgf/cm2之壓力。When the wafer is taken out in the above state, the semiconductor wafer and the adhesive portion are partially peeled off by the pressure-sensitive adhesive, so that a wafer to which only the adhesive layer is attached can be obtained. The resulting wafer with the adhesive layer attached thereto is attached to the semiconductor substrate. Typically, the wafer is attached under the following conditions: a temperature of 100 ° C to 180 ° C, a time of 0.5 seconds to 3 seconds, and a pressure of 0.5 kgf / cm 2 to 2 kgf / cm 2 .
在進行此程序之後，進行金屬線結合程序及模製程序，以致獲得半導體裝置。當依本發明使用具有如上述之膠黏力及切變強度的黏著劑部分時，則即使在晶粒結合程序後不進行預先固化程序，也可以在金屬線結合或模製程序中抑制晶片之脫離、移動或偏離。After this procedure is performed, a wire bonding process and a molding process are performed so that a semiconductor device is obtained. When the adhesive portion having the adhesive strength and shear strength as described above is used in accordance with the present invention, the wafer can be inhibited in the wire bonding or molding process even if the pre-curing process is not performed after the die bonding process. Disengage, move or deviate.
半導體裝置之製造方法不限於這些程序，且因此可以另外包括任意的程序或可以改變程序的順序。例如，可以用UV固化、切割及擴展程序之順序或用切割、擴展及UV固化程序之順序，進行此方法。在晶片接附程序之後，另外可以進行加熱或冷卻程序。The manufacturing method of the semiconductor device is not limited to these programs, and thus may include any program or may change the order of the programs. For example, the method can be carried out in the order of UV curing, cutting and expanding procedures or in the order of cutting, expanding and UV curing procedures. After the wafer attachment procedure, a heating or cooling process can additionally be performed.
在下文中，本發明將經由以下實例及比較用實例更詳細描述。然而，本發明之範圍不限於以下實例。Hereinafter, the present invention will be described in more detail through the following examples and comparative examples. However, the scope of the invention is not limited to the following examples.
製備實例1：具有低彈性之高分子量樹脂的製備Preparation Example 1: Preparation of High Molecular Weight Resin with Low Elasticity
100重量份之丙烯酸丁酯、100重量份之丙烯酸乙酯、70重量份之丙烯腈、8重量份之甲基丙烯酸縮水甘油酯、4重量份之丙烯酸、及750重量份之去離子的蒸餾水倒入具有攪拌器、氮氣取代裝置及溫度計之四開口的3升反應器中。然後，添加2重量份之懸浮劑(用水稀釋成4%之聚乙烯醇(商標：NH-17，由Nippon Ghosei))及0.3重量份之分子量調節劑(十二烷基硫醇)，以製備混合物。所製備之混合物進行氮取代程序約1小時，然後加熱至55℃。當溫度到達預定溫度時，添加2重量份之用乙酸乙酯稀釋成2重量%濃度之二乙基己基過氧二碳酸酯(商標：Trigonox EHP，由Akzo Nobel製造)以作為起始劑以使聚合反應開始。在聚合反應開始後4小時之時，使聚合反應結束。然後，反應產物用去離子之蒸餾水洗數次，且使用離心分離機及真空爐乾燥。藉此，獲得聚合物珠粒。珠粒之產率是90%，藉由使用凝膠滲透層析法所測得之珠粒的重量平均分子量是750,000，珠粒之分子量分布是4.0，且珠粒之玻璃轉換溫度(Tg)是10℃。所製備之聚合物珠粒充分地溶解在甲基乙基酮中1日，然後乾燥。100 parts by weight of butyl acrylate, 100 parts by weight of ethyl acrylate, 70 parts by weight of acrylonitrile, 8 parts by weight of glycidyl methacrylate, 4 parts by weight of acrylic acid, and 750 parts by weight of deionized distilled water It was placed in a 3 liter reactor with a stirrer, a nitrogen replacement unit and a four opening of a thermometer. Then, 2 parts by weight of a suspending agent (diluted with 4% polyvinyl alcohol (trademark: NH-17, from Nippon Ghosei)) and 0.3 parts by weight of a molecular weight regulator (dodecyl mercaptan) were added to prepare mixture. The prepared mixture was subjected to a nitrogen substitution procedure for about 1 hour and then heated to 55 °C. When the temperature reached a predetermined temperature, 2 parts by weight of diethylhexylperoxydicarbonate (trademark: Trigonox EHP, manufactured by Akzo Nobel) diluted with 2% by weight of ethyl acetate was added as a starter to make The polymerization begins. At 4 hours after the start of the polymerization, the polymerization reaction was terminated. Then, the reaction product was washed several times with deionized distilled water and dried using a centrifugal separator and a vacuum oven. Thereby, polymer beads were obtained. The yield of the beads was 90%, the weight average molecular weight of the beads measured by gel permeation chromatography was 750,000, the molecular weight distribution of the beads was 4.0, and the glass transition temperature (Tg) of the beads was 10 ° C. The prepared polymer beads were sufficiently dissolved in methyl ethyl ketone for 1 day and then dried.
實例1Example 1
切割用膜(壓敏性黏著劑膜)之製備Preparation of film for cutting (pressure sensitive adhesive film)
藉由以下方式製備UV(紫外光)可固化之壓敏性黏著劑組成物：相對於100重量份之多官能寡聚物，混合7重量份之作為光起始劑之Darocur TPO與一種包括100重量份丙烯酸系共聚物(其係藉由共聚合丙烯酸2-乙基己酯及甲基丙烯酸甲酯而製備且具有800,000之重量平均分子量及10℃之玻璃轉換溫度)，5重量份異氰酸酯硬化劑及10重量份之具有20,000重量平均分子量之多官能寡聚物的混合物。然後，將該UV可固化之壓敏性組成物塗覆在已進行離型處理且具有38μm厚度的聚酯膜上，以在乾燥後獲得20μm之厚度，且在110℃下乾燥3分鐘。然後，經乾燥之壓敏性黏著劑層經層合在具有90μm厚度之作為基底膜的聚烯烴膜上。藉此製備用於切割之壓敏性黏著劑膜。A UV (ultraviolet light) curable pressure-sensitive adhesive composition is prepared by mixing 7 parts by weight of Darocur TPO as a photoinitiator with 100 parts by weight of polyfunctional oligomer Parts by weight of an acrylic copolymer prepared by copolymerizing 2-ethylhexyl acrylate and methyl methacrylate and having a weight average molecular weight of 800,000 and a glass transition temperature of 10 ° C, and 5 parts by weight of an isocyanate hardener And 10 parts by weight of a mixture of polyfunctional oligomers having a weight average molecular weight of 20,000. Then, the UV curable pressure-sensitive composition was coated on a polyester film which had been subjected to release treatment and had a thickness of 38 μm to obtain a thickness of 20 μm after drying, and dried at 110 ° C for 3 minutes. Then, the dried pressure-sensitive adhesive layer was laminated on a polyolefin film as a base film having a thickness of 90 μm. Thereby, a pressure-sensitive adhesive film for cutting is prepared.
晶粒接附膜之製備Preparation of die attach film
在甲基乙基酮(MEK)中混合及攪動75重量份之YDCN-500-1P(甲酚酚醛清漆環氧樹脂，由KUKDO Chem. Co.,Ltd.,製造，環氧當量=200，軟化點=52℃)，25重量份之YD-128(雙酚A環氧樹脂，由KUKDO Chem. Co. Ltd製造，環氧當量=187)，60重量份之KPH-F2001(酚酚醛清漆樹脂，由Kolon Chem. Co.,Ltd.,羥基值=106，軟化點=88℃)，200重量份之在製備實例1所製備之高分子量樹脂，0.5重量份之2-苯基咪唑(2PZ，由SHIKOKU Chemical Co.製造)，2重量份之矽烷偶合劑(KBM-403，由Shinetsu Chemical Co. Ltd.製造，γ-縮水甘油氧基丙基三甲氧基矽烷)，及30重量份之矽石填料(UFP-30，由Denka Kagaku Kogyo Co. Ltd製造，平均粒子直徑=150nm)，以製備樹脂清漆。所製備之樹脂清漆經塗覆在具有38μm厚度之基底膜上(RS-21G，聚矽氧之PET離型膜，由SKC製造)，且在110℃下乾燥5分鐘。藉此製備用於晶粒結合之具有20μm厚度之黏著劑層。使用熱滾壓層合機，在40℃及5kgf/cm2之條件下，將所製備之黏著劑層層合在包括UV可固化之壓敏性黏著劑層的壓敏性黏著劑膜上。藉此製備晶粒接附膜。75 parts by weight of YDCN-500-1P (cresol novolac epoxy resin, manufactured by KUKDO Chem. Co., Ltd., epoxy equivalent = 200, softened and mixed in methyl ethyl ketone (MEK) Point = 52 ° C), 25 parts by weight of YD-128 (bisphenol A epoxy resin, manufactured by KUKDO Chem. Co., epoxy equivalent = 187), 60 parts by weight of KPH-F2001 (phenol novolac resin, From Kolon Chem. Co., Ltd., hydroxyl value = 106, softening point = 88 ° C), 200 parts by weight of the high molecular weight resin prepared in Preparation Example 1, 0.5 part by weight of 2-phenylimidazole (2PZ, Manufactured by SHIKOKU Chemical Co., 2 parts by weight of a decane coupling agent (KBM-403, manufactured by Shinetsu Chemical Co. Ltd., γ-glycidoxypropyltrimethoxydecane), and 30 parts by weight of a vermiculite filler (UFP-30, manufactured by Denka Kagaku Kogyo Co. Ltd., average particle diameter = 150 nm) to prepare a resin varnish. The prepared resin varnish was coated on a base film having a thickness of 38 μm (RS-21G, a polyfluorene PET release film, manufactured by SKC), and dried at 110 ° C for 5 minutes. Thereby, an adhesive layer having a thickness of 20 μm for grain bonding was prepared. The prepared adhesive layer was laminated on a pressure-sensitive adhesive film including a UV curable pressure-sensitive adhesive layer at 40 ° C and 5 kgf / cm 2 using a hot roll laminator. Thereby, a die attach film was prepared.
實例2Example 2
藉由如實例1中之相同方法製備晶粒接附膜，除了藉由控制壓敏性黏著劑膜以具有30μm厚度且使用具有80μm厚度之聚烯烴膜以製備壓敏性黏著劑膜之外。A die attach film was prepared by the same method as in Example 1, except that a pressure sensitive adhesive film was prepared by controlling a pressure sensitive adhesive film to have a thickness of 30 μm and using a polyolefin film having a thickness of 80 μm.
實例3Example 3
藉由如實例2中之相同方法製備晶粒接附膜，除了用於晶粒結合之黏著劑層厚度被控制成60μm。The die attach film was prepared by the same method as in Example 2 except that the thickness of the adhesive layer for grain bonding was controlled to 60 μm.
實例4Example 4
藉由如實例2中之相同方法製備晶粒接附膜，除了用於晶粒結合之黏著劑層厚度被控制成10μm。The die attach film was prepared by the same method as in Example 2 except that the thickness of the adhesive layer for grain bonding was controlled to 10 μm.
比較用實例1Comparison example 1
藉由如實例1中之相同方法製備晶粒接附膜，除了藉由控制壓敏性黏著劑膜以具有10μm厚度且使用具有100μm厚度之聚烯烴膜以製備壓敏性黏著劑膜之外。A die attach film was prepared by the same method as in Example 1, except that a pressure sensitive adhesive film was prepared by controlling a pressure sensitive adhesive film to have a thickness of 10 μm and using a polyolefin film having a thickness of 100 μm.
比較用實例2Comparison example 2
藉由如實例1中之相同方法製備晶粒接附膜，除了藉由控制壓敏性黏著劑膜以具有40μm厚度且使用具有70μm厚度之聚烯烴膜以製備壓敏性黏著劑膜之外。A die attach film was prepared by the same method as in Example 1, except that a pressure sensitive adhesive film was prepared by controlling a pressure sensitive adhesive film to have a thickness of 40 μm and using a polyolefin film having a thickness of 70 μm.
比較用實例3Comparison example 3
藉由如比較用實例2中之相同方法製備晶粒接附膜，除了藉由用於晶粒結合之黏著劑膜的厚度被控制成5μm之外。The die attach film was prepared by the same method as in Comparative Example 2 except that the thickness of the adhesive film for grain bonding was controlled to be 5 μm.
實例及比較用實例所製備之膜的各層之間厚度的關係安排於以下表1中。The relationship between the thicknesses of the layers of the film prepared by the examples and the comparative examples is shown in Table 1 below.
關於如上述之晶粒接附膜，藉由以下方法測量其物性，且結果安排於以下表2中。Regarding the die attach film as described above, the physical properties thereof were measured by the following methods, and the results were arranged in Table 2 below.
1. 毛邊抑制特性Burr suppression characteristics
在50℃下，使用安裝器，將晶粒接附膜層合在100μm之晶圓及晶圓環框上。然後，使用切割裝置(DAD-640，由Disco Co. Ltd製造)，在rpm=40K，速度=50mm/sec，晶片尺寸=5mm×5mm，及總數=100之條件下切割晶圓。其次，測量在晶片上所產生之毛邊。The die attach film was laminated on a 100 μm wafer and wafer ring frame at 50 ° C using an installer. Then, using a cutting device (DAD-640, manufactured by Disco Co. Ltd.), the wafer was cut under the conditions of rpm = 40 K, speed = 50 mm/sec, wafer size = 5 mm × 5 mm, and total number = 100. Second, the burrs generated on the wafer are measured.
2. 擴展性2. Scalability
在切割程序之後，使用擴展機(HS-1810，由Huggle Co. Ltd.製造)，將經切割之晶圓擴展至5mm之範圍。藉此估計擴展性。After the cutting process, the expanded wafer (HS-1810, manufactured by Huggle Co. Ltd.) was used to expand the cut wafer to a range of 5 mm. This is used to estimate scalability.
3. 碎裂抑制特性3. Fragmentation suppression characteristics
在切割程序之後，將具有5mm×5mm尺寸之晶片(總數=100)剝離，然後觀察在每一晶片之側面上的碎裂。測量在晶片中具有比20μm更大之尺寸的碎裂物。After the dicing process, wafers having a size of 5 mm x 5 mm (total = 100) were peeled off, and then the chipping on the side of each wafer was observed. Fragments having a size larger than 20 μm in the wafer were measured.
4. 取出特性4. Take out the features
在切割程序之後，具有100mJ/cm2輻射強度之高壓汞燈被照射，然後經切割之晶片(總數=100)被取出。在具有黏著劑部分之晶片被取出的情況以符號○表示，且產生裂痕或晶片不取出之情況以符號×表示。After the cutting procedure, a high pressure mercury lamp having a radiation intensity of 100 mJ/cm 2 was irradiated, and then the cut wafer (total = 100) was taken out. The case where the wafer having the adhesive portion is taken out is indicated by the symbol ○, and the case where the crack is generated or the wafer is not taken out is indicated by the symbol ×.
如以上表2之結果可見的，本發明之實例顯出優越之毛邊及碎裂物抑制特性及優越之取出特性。相反地，比較用實例1(其中B/A之值低於本發明之範圍)顯示：在程序中產生很多毛邊。比較用實例2及3(其中B/A之值超過本發明之範圍)顯示：產生很多碎裂物。另外，比較用實例3(其中B/C之值超過本發明之範圍)顯示：產生很多毛邊及碎裂物且取出特性是差的。As can be seen from the results of Table 2 above, the examples of the present invention exhibited superior burrs and fracture inhibiting characteristics and superior take-up characteristics. Conversely, comparison with Example 1 (where the value of B/A is below the scope of the invention) shows that a lot of burrs are produced in the program. Comparison of Examples 2 and 3 (wherein the value of B/A exceeds the scope of the present invention) shows that many fragments are produced. Further, Comparative Example 3 (wherein the value of B/C exceeds the range of the present invention) shows that a lot of burrs and fragments are generated and the take-out characteristics are poor.
依本發明，可以提供一種晶粒接附膜，其可以在切割程序中抑制毛邊產生及晶片飛揚，且在晶粒結合程序中顯現出優越之擴展及取出特性。另外，晶粒接附膜可以在金屬線結合或模製期間防止晶片之剝離、晶片之移動或晶片之偏離。因此，依本發明可能改良包埋性，抑制晶圓或接線用基材之翹曲，且加強半導體封裝程序之生產力。According to the present invention, it is possible to provide a die attach film which can suppress burr generation and wafer flying in a dicing process and exhibit superior expansion and take-out characteristics in a die bonding process. In addition, the die attach film can prevent peeling of the wafer, movement of the wafer, or deviation of the wafer during bonding or molding of the metal wire. Therefore, according to the present invention, it is possible to improve the embedding property, suppress the warpage of the wafer or the wiring substrate, and enhance the productivity of the semiconductor package process.
雖然已參考某些例示用之具體實例顯示及描述本發明，精於此技藝之人士了解：本發明中可以有很多形式及細節之改變，卻不偏離如所附之申請專利範圍所定義之本發明的精神及範圍。Although the present invention has been shown and described with reference to the specific embodiments of the present invention, it is understood by those skilled in the art that the invention may be modified in many forms and details without departing from the scope of the appended claims. The spirit and scope of the invention.
Claims (21)
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| TW098135096A TWI564361B (en) | 2009-10-16 | 2009-10-16 | Die attach film |
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| Application Number | Priority Date | Filing Date | Title |
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| TW098135096A TWI564361B (en) | 2009-10-16 | 2009-10-16 | Die attach film |
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| TW201114874A TW201114874A (en) | 2011-05-01 |
| TWI564361B true TWI564361B (en) | 2017-01-01 |
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| KR20130055541A (en) | 2011-11-18 | 2013-05-28 | 주식회사 엘지화학 | Photocuring type adhesive or pressure-sensitive adhesive film for encapsulating organic electronic device, organic electronic device and preparing method thereof |
| CN103946998B (en) * | 2011-11-18 | 2017-03-29 | Lg化学株式会社 | For encapsulating the light curable pressure sensitive adhesive films of organic electronic device, organic electronic device and its method for packing |
| WO2019150446A1 (en) * | 2018-01-30 | 2019-08-08 | 日立化成株式会社 | Adhesive composition, filmy adhesive, adhesive sheet, and production method for semiconductor device |
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| TW200532850A (en) * | 2004-03-17 | 2005-10-01 | Nitto Denko Corp | Dicing die-bonding film |
| TWI298084B (en) * | 2004-03-15 | 2008-06-21 | Hitachi Chemical Co Ltd | Die-bond sheet for dicing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI298084B (en) * | 2004-03-15 | 2008-06-21 | Hitachi Chemical Co Ltd | Die-bond sheet for dicing |
| TW200532850A (en) * | 2004-03-17 | 2005-10-01 | Nitto Denko Corp | Dicing die-bonding film |
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