TW201921460A - Substrate processing method - Google Patents
Substrate processing methodInfo
- Publication number
- TW201921460A TW201921460A TW107122875A TW107122875A TW201921460A TW 201921460 A TW201921460 A TW 201921460A TW 107122875 A TW107122875 A TW 107122875A TW 107122875 A TW107122875 A TW 107122875A TW 201921460 A TW201921460 A TW 201921460A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- daf
- main surface
- adhesive tape
- processing
- Prior art date
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Abstract
Description
本發明係關於基板處理方法。The present invention relates to a substrate processing method.
近年來，為因應半導體裝置小型化及輕量化等之要求，在半導體晶圓等之基板的第一主表面上形成元件、電路、端子等後，研磨與基板之第一主表面相反側的第二主表面，使基板薄板化。基板薄板化時，用保護帶保護基板之第一主表面。一般是在使基板薄板化後，進行基板之切割而將基板分割成多數半導體裝置(請參照例如專利文獻1)。 [先前技術文獻] [專利文獻]In recent years, in order to meet the requirements for miniaturization and weight reduction of semiconductor devices, components, circuits, and terminals are formed on the first main surface of a substrate such as a semiconductor wafer, and the first side opposite to the first main surface of the substrate is polished. Two main surfaces make the substrate thin. When the substrate is thinned, the first main surface of the substrate is protected with a protective tape. Generally, after the substrate is thinned, the substrate is cut to divide the substrate into a plurality of semiconductor devices (see, for example, Patent Document 1). [Prior Art Literature] [Patent Literature]
[專利文獻1]日本特開2011－91240號公報[Patent Document 1] Japanese Patent Laid-Open No. 2011-91240
[發明所欲解決的問題][Problems to be solved by the invention]
此外，使用雷射光只在基板內部進行雷射加工之隱形切割(STEALTH DICING：SD)作為基板之切割方法是習知的。在半導體裝置之製造過程中，進行基板之隱形切割後進行薄板化時，若如習知地在將保護帶黏貼在第一主表面上之狀態下研磨第二主表面，因為保持各晶片之保護帶的剛性低，所以恐有各晶片之相對位置變動而缺乏加工穩定性之虞。In addition, it is known that a stealth dicing (SD) using laser light to perform laser processing only inside the substrate is used as a substrate cutting method. In the manufacturing process of a semiconductor device, when the substrate is thinned after the substrate is invisible cut, if the second main surface is ground in a state where the protective tape is adhered to the first main surface as is conventional, because the protection of each wafer is maintained Since the rigidity of the belt is low, there is a fear that the relative position of each wafer may fluctuate and lack of processing stability.
本揭示之目的在於提供一種可提高半導體裝置之加工穩定性的基板處理方法。 [解決問題的手段]An object of the present disclosure is to provide a substrate processing method capable of improving processing stability of a semiconductor device. [Means to solve the problem]
本發明實施形態之一觀點的基板處理方法具有：支持基板接著步驟，係將支持基板接著在形成基板之裝置層側的第一主表面上；切割步驟，係由與藉由前述支持基板接著步驟接著前述支持基板之前述第一主表面相反側的第二主表面進行前述基板之隱形切割；及薄板化步驟，係研磨藉由前述切割步驟進行隱形切割後之前述基板的前述第二主表面以使前述基板薄板化。 [發明的功效]A substrate processing method according to one aspect of the embodiments of the present invention includes: a supporting substrate bonding step, wherein the supporting substrate is bonded to a first main surface of a device layer side of the substrate; and a cutting step is performed by and through the aforementioned supporting substrate bonding step. Then, the second main surface opposite to the first main surface of the support substrate is subjected to stealth cutting of the substrate; and the thinning step is to grind the second main surface of the substrate after the stealth cutting by the cutting step to The substrate is made thin. [Effect of the invention]
依據本揭示，可提供一種可提高半導體裝置之加工穩定性的基板處理方法。According to the present disclosure, a substrate processing method capable of improving processing stability of a semiconductor device can be provided.
以下，參照添附圖式說明實施形態。為容易了解說明，在各圖中儘可能對相同構成元件賦予相同符號，且省略重複之說明。Hereinafter, embodiments will be described with reference to the accompanying drawings. For easy understanding of the description, the same constituent elements are given the same symbols as much as possible in the drawings, and repeated descriptions are omitted.
[實施形態] 參照圖1至圖13說明實施形態。此外，在以下說明中，X方向、Y方向、Z方向係互相垂直之方向，且X方向及Y方向係水平方向，而Z方向係鉛垂方向。以鉛垂軸為中心之旋轉方向亦稱為θ方向。[Embodiment] An embodiment will be described with reference to Figs. 1 to 13. In the following description, the X direction, the Y direction, and the Z direction are mutually perpendicular directions, the X direction and the Y direction are horizontal directions, and the Z direction is a vertical direction. The direction of rotation around the vertical axis is also referred to as the θ direction.
＜基板處理系統＞ 圖1係顯示實施形態之基板處理系統1的平面圖。基板處理系統1進行基板10之切割、基板10之薄板化、DAF對基板10之附著、晶片間隔之擴大、基板10之安裝等。基板處理系統1具有搬出入站20、處理站30及控制裝置90。<Substrate Processing System> FIG. 1 is a plan view showing a substrate processing system 1 according to the embodiment. The substrate processing system 1 performs cutting of the substrate 10, thinning of the substrate 10, adhesion of the DAF to the substrate 10, enlargement of a wafer interval, mounting of the substrate 10, and the like. The substrate processing system 1 includes a loading / unloading station 20, a processing station 30, and a control device 90.
匣C由外部搬出入搬出入站20。匣C沿Z方向間隔地收容多數片基板10。搬出入站20具有載置台21及搬送區域25。The cassette C is carried in and out from the outside station 20. The cassette C accommodates a plurality of substrates 10 at intervals in the Z direction. The loading / unloading station 20 includes a mounting table 21 and a transfer area 25.
載置台21具有多數載置板22。多數載置板22沿Y方向呈一列地排列。匣C載置在各載置板22上。一載置板22上之匣C收容處理前之基板10，且另一載置板22上之匣C收容處理後之基板10。The mounting table 21 includes a plurality of mounting plates 22. The plurality of mounting plates 22 are arranged in a row in the Y direction. The cassette C is mounted on each mounting plate 22. The cassette C on one mounting plate 22 accommodates the substrate 10 before processing, and the cassette C on the other mounting plate 22 accommodates the substrate 10 after processing.
搬送區域25配置成在X方向上與載置台21鄰接。沿Y方向延伸之搬送路26及可沿搬送路26移動之搬送裝置27設置在搬送區域25中。搬送裝置27不僅可沿Y方向，亦可沿X方向、Z方向及θ方向移動。搬送裝置27在載置於載置板22上之匣C與處理站30之過渡部35間進行基板10之搬送。The transfer area 25 is arranged adjacent to the mounting table 21 in the X direction. A transfer path 26 extending in the Y direction and a transfer device 27 that can be moved along the transfer path 26 are provided in the transfer area 25. The transport device 27 can move not only in the Y direction, but also in the X direction, the Z direction, and the θ direction. The transfer device 27 transfers the substrate 10 between the cassette C placed on the mounting plate 22 and the transition portion 35 of the processing station 30.
處理站30具有搬送區域31、過渡部35及後述之各種處理部。此外，處理部之配置或個數不限於圖1所示之配置或個數，可任意地選擇。另外，多數處理部亦可按任意之單位分散或集中地配置。The processing station 30 includes a transfer area 31, a transition section 35, and various processing sections described later. In addition, the configuration or the number of processing sections is not limited to the configuration or the number shown in FIG. 1, and can be arbitrarily selected. In addition, many processing units may be distributed or concentrated in arbitrary units.
搬送區域31以過渡部35為基準，設置在與搬送區域25之X方向相反側。過渡部35及各種處理部等與搬送區域31分開地設置，且設置成包圍搬送區域31。The transfer area 31 is provided on the side opposite to the X direction of the transfer area 25 with the transition portion 35 as a reference. The transition section 35 and various processing sections are provided separately from the transfer area 31 and are provided so as to surround the transfer area 31.
沿X方向延伸之搬送路32及可沿搬送路32移動之搬送裝置33設置在搬送區域31中。搬送裝置33不僅可沿X方向，亦可沿Y方向、Z方向及θ方向移動。搬送裝置33在與搬送區域31鄰接之處理部間搬送基板10。A transfer path 32 extending in the X direction and a transfer device 33 that can move along the transfer path 32 are provided in the transfer area 31. The conveying device 33 can move not only in the X direction, but also in the Y direction, the Z direction, and the θ direction. The transfer device 33 transfers the substrate 10 between processing sections adjacent to the transfer area 31.
控制裝置90由例如電腦構成，且如圖1所示地具有CPU(中央處理單元(Central Processing Unit))91、記憶體等之記錄媒體92、輸入介面93及輸出介面94。控制裝置90藉由使CPU 91執行記憶於記錄媒體92中之程式，進行各種控制。此外，控制裝置90藉由輸入介面93接收來自外部之信號且藉由輸出介面94發送信號至外部。The control device 90 is composed of, for example, a computer, and includes a CPU (Central Processing Unit) 91, a recording medium 92 such as a memory, an input interface 93, and an output interface 94 as shown in FIG. The control device 90 performs various controls by causing the CPU 91 to execute a program stored in the recording medium 92. In addition, the control device 90 receives signals from the outside through the input interface 93 and sends signals to the outside through the output interface 94.
控制裝置90之程式記憶在資訊記錄媒體中且由資訊記錄媒體安裝。資訊記錄媒體可舉例如：硬碟(HD)、軟碟(FD)、光碟(CD)、光磁碟(MO)、記憶卡等。此外，程式可透過網際網路由伺服器下載並安裝。The program of the control device 90 is stored in the information recording medium and is installed by the information recording medium. The information recording medium may be, for example, a hard disk (HD), a floppy disk (FD), an optical disk (CD), an optical magnetic disk (MO), a memory card, and the like. In addition, the program can be downloaded and installed through an Internet routing server.
＜基板處理系統處理後之基板＞ 圖2係顯示基板處理系統1處理後之基板10的立體圖。基板10在實施切割、薄板化、DAF 15之附著、晶片13之間隔擴大等的處理後，透過黏著帶51安裝在框架59上。<Substrate Processed by Substrate Processing System> FIG. 2 is a perspective view showing the substrate 10 processed by the substrate processing system 1. The substrate 10 is subjected to processing such as dicing, thinning, adhesion of the DAF 15 and enlargement of the interval between the wafers 13 and then is mounted on the frame 59 through the adhesive tape 51.
黏著帶51由片狀基材及塗布在片狀基材表面上之黏著劑構成。黏著帶51以覆蓋環狀框架59之開口部的方式安裝在框架59上且在框架59之開口部中與基板10黏合。藉此，可保持框架59並搬送基板10，因此可提高基板10之處理性。The adhesive tape 51 is composed of a sheet-like substrate and an adhesive applied on the surface of the sheet-like substrate. The adhesive tape 51 is attached to the frame 59 so as to cover the opening portion of the ring-shaped frame 59 and adheres to the substrate 10 in the opening portion of the frame 59. Thereby, the substrate 59 can be carried while the frame 59 is held, and the rationality of the substrate 10 can be improved.
DAF(晶粒附接薄膜(Die Attach Film))15可如圖2所示地設置在黏著帶51與基板10之間。DAF 15係晶粒接合用之接著片。DAF 15係用於積層之晶片的接著、晶片與基材之接著等。DAF 15可具有導電性或絕緣性。A DAF (Die Attach Film) 15 may be provided between the adhesive tape 51 and the substrate 10 as shown in FIG. 2. Adhesive sheet for DAF 15 series die bonding. DAF 15 is used for bonding of laminated wafers, wafer and substrate. DAF 15 may be conductive or insulating.
DAF 15形成為比框架59之開口部小且設置在框架59之內側。DAF覆蓋基板10之第二主表面12全體。此外，未進行晶片13之積層時，不需要DAF 15，因此基板10可只透過黏著帶51安裝在框架59上。The DAF 15 is formed smaller than the opening portion of the frame 59 and is provided inside the frame 59. The DAF covers the entire second main surface 12 of the substrate 10. In addition, when the lamination of the wafer 13 is not performed, the DAF 15 is not required, so the substrate 10 can be mounted on the frame 59 only through the adhesive tape 51.
以下，依序說明配設於處理站30中之支持基板接著部40、切割部100、薄板化部200、DAF附著部300、DAF分割加工部400、黏著帶附著部510、支持基板剝離部520、擴大部530、安裝部540及清洗部600。Hereinafter, the support substrate bonding portion 40, the cutting portion 100, the thinning portion 200, the DAF attachment portion 300, the DAF division processing portion 400, the adhesive tape attachment portion 510, and the support substrate peeling portion 520 disposed in the processing station 30 will be described in order. , An enlarged portion 530, a mounting portion 540, and a cleaning portion 600.
＜支持基板接著部＞ 圖3係顯示在支持基板接著部40中支持基板41安裝在基板10上之狀態的圖。支持基板接著部40將支持基板41接著在基板處理系統1處理前之基板10上。基板10係例如矽晶圓及化合物半導體晶圓等之半導體基板、及藍寶石基板等。處理前之基板10的第一主表面11藉由形成格子狀之多數切割道區隔，且在區隔之區域中形成包含元件、電路、端子等之裝置層14。<Support Substrate Adhering Portion> FIG. 3 is a diagram showing a state where the support substrate 41 is mounted on the substrate 10 in the support substrate adhering portion 40. The supporting substrate adhering unit 40 attaches the supporting substrate 41 to the substrate 10 before the substrate processing system 1 processes. The substrate 10 is a semiconductor substrate such as a silicon wafer and a compound semiconductor wafer, and a sapphire substrate. The first main surface 11 of the substrate 10 before processing is separated by a plurality of scribe lines forming a grid shape, and a device layer 14 including elements, circuits, terminals, and the like is formed in the separated region.
支持基板41在進行切割及薄板化等之加工時保護基板10之第一主表面11，並保護預形成在第一主表面11上之裝置層14。支持基板41係直徑與基板10大略相同之平板狀基板且支持基板10。支持基板41在本實施形態中係具有透射性之玻璃基板。此外，支持基板41只要是相較於習知之保護帶等剛性比較高的基板即可，且亦可使用例如矽晶圓及化合物半導體晶圓等之半導體基板及藍寶石基板等玻璃製基板以外的基板。此外，支持基板41具有支持基板10的機能且具有作為在基板處理系統1之各部間搬送基板10之載具的機能。The support substrate 41 protects the first main surface 11 of the substrate 10 during processing such as cutting and thinning, and protects the device layer 14 pre-formed on the first main surface 11. The supporting substrate 41 is a flat substrate having a diameter substantially the same as that of the substrate 10 and the supporting substrate 10. The support substrate 41 is a transparent glass substrate in this embodiment. In addition, the supporting substrate 41 may be a substrate having a relatively high rigidity compared to a conventional protective tape, and a substrate other than a glass substrate such as a semiconductor substrate such as a silicon wafer and a compound semiconductor wafer and a sapphire substrate may be used. . In addition, the support substrate 41 has a function of supporting the substrate 10 and a function as a carrier for transferring the substrate 10 between the sections of the substrate processing system 1.
支持基板接著部40將接著劑塗布在形成基板10之裝置層14側的第一主表面11上而形成接著層42，並藉由接著層42將基板10接著在支持基板41上。在本實施形態中，支持基板接著部40透過具有透射性之支持基板41將紫外線照射在接著層42上，藉此使接著層42硬化來提高接著層42之黏著力，並將支持基板41黏著在基板10上。此外，除了紫外線照射以外，亦可使用用熱或雷射之方法作為接著層42之硬化方法。另外，亦可將接著劑塗布在支持基板41側進行接著來取代將接著劑塗布在第一主表面11上。The support substrate bonding portion 40 applies an adhesive on the first main surface 11 on the device layer 14 side of the substrate 10 to form a bonding layer 42, and the substrate 10 is bonded to the support substrate 41 by the bonding layer 42. In this embodiment, the supporting substrate bonding portion 40 irradiates ultraviolet rays on the bonding layer 42 through the supporting substrate 41 having translucency, thereby hardening the bonding layer 42 to increase the adhesive force of the bonding layer 42 and bonding the supporting substrate 41. On the substrate 10. In addition to the ultraviolet irradiation, a method using heat or laser may be used as a method for curing the adhesive layer 42. Instead of applying the adhesive to the first main surface 11, an adhesive may be applied to the support substrate 41 and then adhered.
接著層42之材料可藉由紫外線、雷射等之照射或加熱而硬化來提高黏著力，且亦可使用在硬化狀態下藉由紫外線、雷射等之照射或加熱產生進一步硬化、軟化及改質等以使黏著力減弱而容易剝離之材料。如此之材料可舉例如：紫外線硬化樹脂、熱硬化樹脂、熱可塑性樹脂等。接著層42可由多數層構成。此時，可只使一部份之層劣化而容易剝離。The material of the next layer 42 can be hardened by irradiation or heating of ultraviolet rays, lasers, etc. to improve the adhesion, and can also be used in the hardened state to generate further hardening, softening and modification by irradiation or heating of ultraviolet rays, lasers, etc. Materials that reduce adhesion and are easy to peel off. Examples of such materials include ultraviolet curing resin, thermosetting resin, and thermoplastic resin. The subsequent layer 42 may be composed of a plurality of layers. In this case, only a part of the layer can be deteriorated and easily peeled.
＜切割部＞ 圖4係顯示切割部100之圖。切割部100進行基板10之切割。在此，基板10之切割意味用以將基板10分割成多數晶片13之加工，且在本實施例中特別如圖4所示地進行使用雷射光在基板10內部形成作為斷裂起點之改質層16的隱形切割(SD)。切割部100具有例如基板保持部110、基板加工部120及移動機構部130。<Cutting Portion> FIG. 4 is a view showing the cutting portion 100. The cutting section 100 cuts the substrate 10. Here, the cutting of the substrate 10 means processing for dividing the substrate 10 into a plurality of wafers 13, and in this embodiment, as shown in FIG. 4, a modified layer is formed inside the substrate 10 using laser light as a starting point of fracture. 16 Stealth Cut (SD). The cutting section 100 includes, for example, a substrate holding section 110, a substrate processing section 120, and a moving mechanism section 130.
基板保持部110透過支持基板41保持基板10。基板10宜保持水平。例如，被基板10之支持基板41保護的第一主表面11為下面，且基板10之第二主表面12為上面。基板保持部110係例如真空吸盤。The substrate holding portion 110 holds the substrate 10 through the support substrate 41. The substrate 10 should be kept horizontal. For example, the first main surface 11 protected by the support substrate 41 of the substrate 10 is the lower surface, and the second main surface 12 of the substrate 10 is the upper surface. The substrate holding portion 110 is, for example, a vacuum chuck.
基板加工部120進行例如被基板保持部110保持之基板10的切割。基板加工部120具有例如雷射振盪器121及將來自雷射振盪器121之雷射光照射在基板10上的光學系122。光學系122係由將來自雷射振盪器121之雷射光向基板10聚光的聚光透鏡等構成。The substrate processing section 120 cuts the substrate 10 held by the substrate holding section 110, for example. The substrate processing unit 120 includes, for example, a laser oscillator 121 and an optical system 122 that irradiates laser light from the laser oscillator 121 on the substrate 10. The optical system 122 is composed of a condenser lens or the like for condensing laser light from the laser oscillator 121 onto the substrate 10.
移動機構部130使基板保持部110及基板加工部120相對地移動。移動機構部130係由例如使基板保持部110沿X方向、Y方向、Z方向及θ方向移動之XYZθ台等構成。The moving mechanism section 130 relatively moves the substrate holding section 110 and the substrate processing section 120. The moving mechanism unit 130 is composed of, for example, an XYZθ stage that moves the substrate holding unit 110 in the X direction, the Y direction, the Z direction, and the θ direction.
控制裝置90控制基板加工部120及移動機構部130，接著沿將基板10區隔成多數晶片13之分割道進行基板10之切割。在本實施形態中使用對基板10具有透射性之雷射光。The control device 90 controls the substrate processing section 120 and the moving mechanism section 130, and then cuts the substrate 10 along a dividing path that divides the substrate 10 into a plurality of wafers 13. In this embodiment, laser light having a transmissive property to the substrate 10 is used.
此外，雖然支持基板接著部40及切割部100在本實施形態中配設在基板處理系統1之處理站30中，但亦可設在基板處理系統1之外部。此時，基板10在切割後，由外部搬入搬出入站20中。In addition, although the supporting substrate bonding section 40 and the cutting section 100 are arranged in the processing station 30 of the substrate processing system 1 in this embodiment, they may be provided outside the substrate processing system 1. At this time, after the substrate 10 is cut, it is carried into and out of the station 20 from the outside.
＜薄板化部＞ 薄板化部200(請參照圖1)加工與被切割後基板10之支持基板41保護的第一主表面11相反側的第二主表面12，藉此使基板10薄板化。藉由切割部100形成分割之起點(改質層16)時，在薄板化之過程中加工應力作用在基板10上，藉此裂縫由分割之起點朝板厚方向伸展，並將基板10分割成多數晶片13。薄板化部200例如如圖1所示地具有旋轉檯201、作為基板吸附部之吸盤座202、粗研磨部210、精加工研磨部220及損壞層去除部230。<Thinning part> The thinning part 200 (refer to FIG. 1) processes the second main surface 12 on the opposite side of the first main surface 11 protected by the support substrate 41 of the diced substrate 10, thereby thinning the substrate 10. When the starting point of the division (modified layer 16) is formed by the cutting portion 100, the processing stress acts on the substrate 10 during the thinning process, whereby the crack extends from the starting point of the division to the thickness direction of the substrate, and the substrate 10 is divided into Most wafers 13. As shown in FIG. 1, the thinned part 200 includes a rotary table 201, a chuck holder 202 as a substrate adsorption part, a rough polishing part 210, a finishing polishing part 220, and a damaged layer removing part 230.
旋轉檯201以旋轉檯201之中心線為中心旋轉。環繞旋轉檯201之旋轉中心線按等間隔配設多數(例如在圖1中為4個)吸盤座202。The turntable 201 rotates around the center line of the turntable 201. A plurality of (for example, four in FIG. 1) suction cup holders 202 are arranged around the rotation center line of the turntable 201 at equal intervals.
多數吸盤座202與旋轉檯201一起以旋轉檯201之中心線為中心旋轉。旋轉檯201之中心線呈鉛垂。旋轉檯201旋轉時，變更與粗研磨部210、精加工研磨部220及損壞層去除部230相對之吸盤座202。Most of the chuck mounts 202 rotate with the rotary table 201 about the center line of the rotary table 201 as a center. The centerline of the turntable 201 is vertical. When the rotary table 201 rotates, the suction pad holder 202 facing the rough grinding section 210, the finishing grinding section 220, and the damaged layer removing section 230 is changed.
吸盤座202透過支持基板41吸附基板10。吸盤座202係例如真空吸盤。基板10宜保持水平。例如，被基板10之支持基板41保護的第一主表面11為下面，且基板10之第二主表面12為上面。The chuck holder 202 sucks the substrate 10 through the support substrate 41. The chuck holder 202 is, for example, a vacuum chuck. The substrate 10 should be kept horizontal. For example, the first main surface 11 protected by the support substrate 41 of the substrate 10 is the lower surface, and the second main surface 12 of the substrate 10 is the upper surface.
圖5係顯示薄板化部200之粗研磨部210的圖。粗研磨部210進行基板10之粗研磨。粗研磨部210係例如如圖5所示地具有旋轉磨石211。旋轉磨石211以其中心線為中心旋轉同時下降，接著加工藉由吸盤座202保持之基板10的上面(即第二主表面12)。在基板10之上面供給研磨液。FIG. 5 is a view showing the roughened portion 210 of the thinned portion 200. The rough polishing section 210 performs rough polishing of the substrate 10. The rough polishing section 210 includes, for example, a rotating grindstone 211 as shown in FIG. 5. The rotary grindstone 211 rotates while descending around its center line, and then processes the upper surface of the substrate 10 (that is, the second main surface 12) held by the chuck base 202. A polishing liquid is supplied on the substrate 10.
精加工研磨部220進行基板10之精加工研磨。精加工研磨部220之結構與粗研磨部210之結構大致相同。但是，精加工研磨部220之旋轉磨石的磨粒平均粒徑比粗研磨部210之旋轉磨石的磨粒平均粒徑小。The finishing polishing section 220 performs finishing polishing of the substrate 10. The structure of the finish grinding section 220 is substantially the same as the structure of the rough grinding section 210. However, the average particle size of the abrasive grains of the rotating grindstone in the finish grinding portion 220 is smaller than the average particle size of the abrasive grains of the rotating grindstone in the rough grinding portion 210.
損壞層去除部230藉由粗研磨及精加工研磨等之研磨去除形成在基板10之第二主表面12上的損壞層。例如，損壞層去除部230對基板10供給處理液以進行濕式蝕刻處理，並去除損壞層。此外，損壞層之去除方法沒有特別限制。The damaged layer removing section 230 removes the damaged layer formed on the second main surface 12 of the substrate 10 by grinding such as rough polishing, finishing polishing, or the like. For example, the damaged layer removing section 230 supplies a processing liquid to the substrate 10 to perform a wet etching process, and removes the damaged layer. In addition, the method for removing the damaged layer is not particularly limited.
此外，薄板化部200可具有進行基板10之研磨的研磨部。研磨部之結構與粗研磨部210之結構大致相同。基板10之研磨可舉CMP(化學機械拋光(Chemical Mechanical Polishing))等為例。另外，薄板化部200可具有形成捕捉不純物之吸除部位(例如結晶缺陷或歪斜)的吸除部。雖然吸盤座202之數目在圖1中為4個，但可依據加工之種類數適當變更。此外，其中一加工部(例如損壞層去除部230)亦可進行多數種類之加工(例如去除損壞層及形成吸除部位)。The thinning section 200 may include a polishing section for polishing the substrate 10. The structure of the polishing section is substantially the same as that of the rough polishing section 210. The polishing of the substrate 10 may be exemplified by CMP (Chemical Mechanical Polishing). In addition, the thinned portion 200 may have a gettering portion that forms a gettering site (for example, a crystal defect or a skew) that catches impurities. Although the number of the suction cup holders 202 is four in FIG. 1, it can be appropriately changed according to the number of kinds of processing. In addition, one of the processing sections (for example, the damaged layer removing section 230) can also perform most types of processing (for example, removing the damaged layer and forming a gettering site).
＜DAF附著部＞ 圖6係顯示DAF附著部300之圖。DAF附著部300將DAF 15附著在已薄板化之基板10的第二主表面12上。例如，DAF附著部300具有DAF塗布部310，DAF塗布部310將包含DAF 15之材料的DAF用塗布液塗布在已薄板化之基板10的第二主表面12上。DAF塗布部310由例如吐出DAF用塗布液之噴嘴等構成。<DAF Adhesion Portion> FIG. 6 is a diagram showing the DAF adhesion portion 300. The DAF attaching section 300 attaches the DAF 15 to the second main surface 12 of the thinned substrate 10. For example, the DAF attaching section 300 includes a DAF coating section 310 that applies a DAF coating solution containing a material of DAF 15 on the second main surface 12 of the thinned substrate 10. The DAF coating unit 310 is configured by, for example, a nozzle or the like that discharges a coating liquid for DAF.
除了DAF塗布部310以外，DAF附著部300亦具有透過支持基板41保持基板10之基板保持部311。基板10宜保持水平。例如，被基板10之支持基板41保護的第一主表面11為下面，且基板10之第二主表面12為上面。基板保持部311係例如真空吸盤。In addition to the DAF coating portion 310, the DAF attachment portion 300 also has a substrate holding portion 311 that holds the substrate 10 through the support substrate 41. The substrate 10 should be kept horizontal. For example, the first main surface 11 protected by the support substrate 41 of the substrate 10 is the lower surface, and the second main surface 12 of the substrate 10 is the upper surface. The substrate holding portion 311 is, for example, a vacuum chuck.
DAF塗布部310相對基板保持部311相對地移動，且將DAF用塗布液塗布在被基板保持部311保持之基板10的第二主表面12上。該塗布方法沒有特別限制，可舉例如：旋塗法、噴墨法、網版印刷法等。The DAF coating section 310 is relatively moved with respect to the substrate holding section 311 and applies the DAF coating liquid on the second main surface 12 of the substrate 10 held by the substrate holding section 311. This coating method is not particularly limited, and examples thereof include a spin coating method, an inkjet method, and a screen printing method.
DAF用塗布液包含例如丙烯酸及環氧等之樹脂及溶化樹脂之溶劑，且收容在瓶子中。連接該瓶子及DAF塗布部310之配管的中途設有流量調整閥及流量計等。The coating liquid for DAF contains a solvent such as a resin such as acrylic acid and epoxy, and a solvent for dissolving the resin, and is contained in a bottle. A flow control valve, a flow meter, and the like are provided in the middle of the pipe connecting the bottle and the DAF coating section 310.
DAF用塗布液塗布在基板10之第二主表面12上並形成液膜。藉由乾燥該液膜，形成DAF 15。使用DAF用塗布液時，藉由變更該液膜之膜厚，可變更DAF 15之膜厚。此外，藉由交換DAF用塗布液之瓶子，可簡單地變更DAF 15之材料。The coating liquid for DAF is coated on the second main surface 12 of the substrate 10 to form a liquid film. By drying the liquid film, DAF 15 was formed. When a coating liquid for DAF is used, the film thickness of DAF 15 can be changed by changing the film thickness of the liquid film. In addition, the material of the DAF 15 can be easily changed by exchanging the bottle of the coating liquid for DAF.
此外，DAF附著部300可組配成例如使用將黏貼預成形為薄膜狀之DAF 15黏貼在已薄板化之基板10的第二主表面12上等圖6所示方法以外的方法，將DAF 15附著在基板10上。In addition, the DAF attaching portion 300 may be configured to use a method other than the method shown in FIG. 6 to apply the DAF 15 to a second main surface 12 of the thin substrate 10 using a DAF 15 that is preformed into a thin film, for example. Attached to the substrate 10.
＜DAF分割加工部400＞ 圖7係顯示DAF分割加工部400之圖。DAF分割加工部400沿晶片13之邊界線進行DAF 15之分割加工。在此，DAF 15之分割加工意味用以分割DAF 15之加工，且包含分割DAF 15及在DAF 15中形成分割之起點。DAF分割加工部400具有例如基板保持部410、DAF加工部420及移動機構部430。<DAF Divided Processing Section 400> FIG. 7 is a diagram showing the DAF divided processing section 400. The DAF division processing unit 400 performs division processing of the DAF 15 along the boundary line of the wafer 13. Here, the division processing of DAF 15 means the processing for dividing DAF 15 and includes the division of DAF 15 and the starting point for forming division in DAF 15. The DAF split processing section 400 includes, for example, a substrate holding section 410, a DAF processing section 420, and a moving mechanism section 430.
基板保持部410透過支持基板41保持基板10。基板10宜保持水平。例如，被基板10之支持基板41保護的第一主表面11為下面，且基板10之與DAF 15附接的第二主表面12為上面。基板保持部410係例如真空吸盤。The substrate holding portion 410 holds the substrate 10 through the support substrate 41. The substrate 10 should be kept horizontal. For example, the first main surface 11 protected by the support substrate 41 of the substrate 10 is the lower surface, and the second main surface 12 of the substrate 10 attached to the DAF 15 is the upper surface. The substrate holding portion 410 is, for example, a vacuum chuck.
DAF加工部420進行例如與被基板保持部410保持之基板10附接的DAF 15的分割加工。DAF加工部420具有例如雷射振盪器421及將來自雷射振盪器421之雷射光照射在DAF 15上的光學系422。光學系422係由將來自雷射振盪器421之雷射光向DAF 15聚光的聚光透鏡等構成。The DAF processing section 420 performs, for example, the division processing of the DAF 15 attached to the substrate 10 held by the substrate holding section 410. The DAF processing unit 420 includes, for example, a laser oscillator 421 and an optical system 422 that irradiates laser light from the laser oscillator 421 on the DAF 15. The optical system 422 is composed of a condenser lens or the like for condensing laser light from the laser oscillator 421 toward the DAF 15.
移動機構部430使基板保持部410及DAF加工部420相對地移動。移動機構部430係由例如使基板保持部410沿X方向、Y方向、Z方向及θ方向移動之XYZθ台等構成。The moving mechanism section 430 relatively moves the substrate holding section 410 and the DAF processing section 420. The moving mechanism section 430 is composed of, for example, an XYZθ stage that moves the substrate holding section 410 in the X direction, the Y direction, the Z direction, and the θ direction.
控制裝置90控制DAF加工部420及移動機構部430，並沿多數晶片13之邊界線進行DAF 15之分割加工。可在DAF 15之內部形成作為斷裂起點之改質層，亦可在DAF 15之雷射照射面(例如在圖7中為上面)形成雷射加工溝。雷射加工溝可沿膜方向貫穿或未貫穿DAF 15。The control device 90 controls the DAF processing section 420 and the moving mechanism section 430, and performs division processing of the DAF 15 along a boundary line of the plurality of wafers 13. A modified layer serving as a fracture starting point may be formed inside the DAF 15, or a laser processing groove may be formed on a laser irradiation surface of the DAF 15 (for example, upper surface in FIG. 7). Laser processing grooves may or may not penetrate DAF 15 in the direction of the membrane.
在DAF 15之內部形成改質層時，使用對DAF 15具有透光性之雷射光。另一方面，在DAF 15之雷射照射面形成雷射加工溝時，使用對DAF 15具有吸收性之雷射光。When forming the reforming layer inside the DAF 15, a laser light having a light transmitting property to the DAF 15 is used. On the other hand, when a laser processing groove is formed on the laser irradiation surface of the DAF 15, a laser light having an absorption property to the DAF 15 is used.
此外，雖然DAF加工部420在本實施形態中具有在DAF 15上照射雷射光之雷射振盪器，但可具有切削DAF 15之切削刀，亦可具有在DAF 15之表面形成刻劃槽的劃線器。In addition, although the DAF processing section 420 has a laser oscillator that irradiates laser light on the DAF 15 in this embodiment, it may have a cutter for cutting the DAF 15 or a scribe for forming a scribed groove on the surface of the DAF 15. Line device.
＜黏著帶附著部＞ 圖8係顯示黏著帶附著部510中之基板10及支持基板41狀態的圖。黏著帶附著部510將黏著帶51附著在附著DAF 15之基板10的第二主表面12上。黏著帶附著部510係例如如圖8所示地將黏著帶51之黏著面向上方地載置在台等上，接著使附著在基板10之第二主表面12上的DAF 15表面與黏著帶51之黏著面黏在一起，藉此使黏著帶51附著在基板10之第二主表面12側。此時，如圖8所示地，被基板10之支持基板41保護的第一主表面11為下面，且基板10之與DAF 15附接的第二主表面12為上面。<Adhesive tape attachment part> FIG. 8 is a figure which shows the state of the board | substrate 10 and the support substrate 41 in the adhesive tape attachment part 510. FIG. The adhesive tape attachment portion 510 attaches the adhesive tape 51 to the second main surface 12 of the substrate 10 to which the DAF 15 is attached. The adhesive tape attachment part 510 is, for example, as shown in FIG. 8, placing the adhesive surface of the adhesive tape 51 on a table or the like, and then attaching the surface of the DAF 15 and the adhesive tape 51 attached to the second main surface 12 of the substrate 10 The adhesive surfaces are adhered together, whereby the adhesive tape 51 is attached to the second main surface 12 side of the substrate 10. At this time, as shown in FIG. 8, the first main surface 11 protected by the support substrate 41 of the substrate 10 is the lower surface, and the second main surface 12 of the substrate 10 attached to the DAF 15 is the upper surface.
＜支持基板剝離部＞ 圖9係顯示支持基板剝離部520中之基板10及支持基板41狀態的圖。支持基板剝離部520由基板10剝離支持基板41。擴大構成基板10之多數晶片13的間隔時，可防止支持基板41成為障礙。<Supported Substrate Peeling Portion> FIG. 9 is a diagram showing states of the substrate 10 and the supporting substrate 41 in the supporting substrate peeling portion 520. The support substrate peeling section 520 peels the support substrate 41 from the substrate 10. When the distance between the plurality of wafers 13 constituting the substrate 10 is increased, the support substrate 41 can be prevented from becoming an obstacle.
支持基板剝離部520例如藉由透過支持基板41將紫外線照射在接著層42上，使藉由支持基板接著部40硬化之接著層42進一步硬化而使黏著力降低。接著層42之黏著力降低後，可藉由剝離操作由基板10輕易地剝離支持基板41。此外，亦可藉由加熱或雷射照射取代紫外線照射，使接著層42之黏著力降低。For example, the support substrate peeling part 520 irradiates ultraviolet rays to the adhesive layer 42 through the support substrate 41, further hardens the adhesive layer 42 cured by the support substrate adhesive part 40, and reduces the adhesive force. After the adhesion of the layer 42 is reduced, the support substrate 41 can be easily peeled from the substrate 10 by a peeling operation. In addition, it is also possible to reduce the adhesion of the adhesive layer 42 by replacing the ultraviolet irradiation with heating or laser irradiation.
＜擴大部＞ 圖10係顯示擴大部530之圖。擴大部530擴大構成附著DAF 15之基板10的多數晶片13的間隔。藉由擴大晶片13之間隔，可抑制搬送時或拾取時之磨削。<Enlarged Section> FIG. 10 is a diagram showing the enlarged section 530. The enlarged portion 530 enlarges the interval between the plurality of wafers 13 constituting the substrate 10 to which the DAF 15 is attached. By increasing the interval between the wafers 13, it is possible to suppress grinding during conveyance or pickup.
擴大部530具有例如黏著帶延伸部535，黏著帶延伸部535藉由使透過DAF 15與基板10附接之黏著帶51呈放射狀地延伸，擴大晶片13之間隔。黏著帶延伸部535具有例如黏著帶外周保持部536、黏著帶推壓部537及黏著帶推壓驅動部538。The enlarged portion 530 includes, for example, an adhesive tape extension 535. The adhesive tape extension 535 radially extends the adhesive tape 51 attached to the substrate 10 through the DAF 15 to increase the interval between the wafers 13. The adhesive tape extension portion 535 includes, for example, an adhesive tape outer periphery holding portion 536, an adhesive tape pressing portion 537, and an adhesive tape pressing driving portion 538.
黏著帶外周保持部536保持黏著帶51之外周部。黏著帶外周保持部536形成例如環狀。黏著帶外周保持部536與配置在黏著帶外周保持部536內側之基板10間形成環狀之間隙。The adhesive tape outer peripheral holding portion 536 holds the outer peripheral portion of the adhesive tape 51. The adhesive tape outer periphery holding portion 536 is formed in a loop shape, for example. An annular gap is formed between the adhesive tape outer periphery holding portion 536 and the substrate 10 disposed inside the adhesive tape outer periphery holding portion 536.
在黏著帶外周保持部536之內周及與被黏著帶外周保持部536保持之黏著帶51附接的基板10外周間，黏著帶推壓部537推壓黏著帶51。黏著帶推壓部537形成例如圓筒狀。The adhesive tape pressing portion 537 presses the adhesive tape 51 between the inner periphery of the adhesive tape outer periphery holding portion 536 and the outer periphery of the substrate 10 attached to the adhesive tape 51 held by the adhesive tape outer periphery holding portion 536. The adhesive tape pressing portion 537 is formed in a cylindrical shape, for example.
黏著帶推壓驅動部538使黏著帶外周保持部536與黏著帶推壓部537相對地移動。該移動方向相對基板10之主表面(例如第一主表面11)呈垂直，且為例如鉛垂方向。黏著帶推壓驅動部538由氣壓缸等構成。The adhesive tape pressing driving portion 538 moves the adhesive tape outer periphery holding portion 536 and the adhesive tape pressing portion 537 relatively. The moving direction is perpendicular to the main surface (for example, the first main surface 11) of the substrate 10 and is, for example, a vertical direction. The adhesive tape pressing driving section 538 is composed of a pneumatic cylinder or the like.
控制裝置90控制黏著帶推壓驅動部538，接著推壓黏著帶51使黏著帶51呈放射狀地延伸。藉此，可擴大晶片13之間隔，因此可在晶片13間形成間隙。The control device 90 controls the adhesive tape pressing driving section 538, and then presses the adhesive tape 51 to extend the adhesive tape 51 radially. Thereby, since the interval of the wafers 13 can be enlarged, a gap can be formed between the wafers 13.
＜安裝部＞ 圖11係顯示安裝部540之圖。安裝部540透過DAF 15及黏著帶51將晶片13之間隔擴大的基板10安裝在框架59上。<Mounting Section> FIG. 11 is a view showing the mounting section 540. The mounting portion 540 mounts the substrate 10 with an increased interval between the wafers 13 on the frame 59 through the DAF 15 and the adhesive tape 51.
例如，安裝部540具有：框架保持部547，其保持框架59；及黏合部548，其對被框架保持部547保持之框架59透過黏著帶51及DAF 15安裝基板10。黏合部548具有例如：平坦保持部549，其保持黏著帶51之安裝在框架59上的安裝部份52呈平坦；及移動機構部550，其使平坦保持部549及框架保持部547相對地移動。For example, the mounting portion 540 includes a frame holding portion 547 that holds the frame 59 and an adhesive portion 548 that mounts the substrate 10 to the frame 59 held by the frame holding portion 547 through the adhesive tape 51 and the DAF 15. The adhesive portion 548 includes, for example, a flat holding portion 549 that keeps the mounting portion 52 of the adhesive tape 51 mounted on the frame 59 flat, and a moving mechanism portion 550 that relatively moves the flat holding portion 549 and the frame holding portion 547 .
黏著帶51之安裝在框架59上的安裝部份52藉由平坦保持部549保持平坦，且一面保持與框架59平行一面相對地接近框架59，接著與框架59黏合。另一方面，可藉由切割器等切除黏著帶51之未安裝在框架59上的剩餘部份53。因為黏著帶51之安裝在框架59上的安裝部份52未鬆動，所以可維持晶片13之間隔。The mounting portion 52 of the adhesive tape 51 mounted on the frame 59 is kept flat by the flat holding portion 549, and is kept close to the frame 59 while being parallel to the frame 59, and then adhered to the frame 59. On the other hand, the remaining portion 53 of the adhesive tape 51 not mounted on the frame 59 can be cut off by a cutter or the like. Since the mounting portion 52 of the adhesive tape 51 mounted on the frame 59 is not loosened, the interval between the wafers 13 can be maintained.
＜清洗部＞ 圖12顯示清洗部600中之基板10狀態的圖。清洗部600清洗剝離支持基板41之基板10的第一主表面11。藉此，去除殘存在第一主表面11上之接著層42。<Cleaning Section> FIG. 12 is a diagram showing the state of the substrate 10 in the cleaning section 600. The cleaning unit 600 cleans the first main surface 11 of the substrate 10 on which the support substrate 41 is peeled. Thereby, the adhesive layer 42 remaining on the first main surface 11 is removed.
＜基板處理方法＞ 接著，說明使用上述結構之基板處理系統1的基板處理方法。圖13係顯示實施形態之基板處理方法的流程圖。<Substrate Processing Method> Next, a substrate processing method using the substrate processing system 1 configured as described above will be described. FIG. 13 is a flowchart showing a substrate processing method according to the embodiment.
如圖13所示地，基板處理方法具有：搬入步驟S101、支持基板接著步驟S102、切割步驟S103、薄板化步驟S104、DAF附著步驟S105、DAF分割加工步驟S106、帶附著步驟S107、支持基板剝離步驟S108、擴大步驟S109、安裝步驟S110、帶切斷步驟S111、清洗步驟S112及搬出步驟S113。該等步驟係在控制裝置90之控制下實施。此外，該等步驟之順序不限於圖13所示之順序。As shown in FIG. 13, the substrate processing method includes: carrying in step S101, supporting substrate followed by step S102, cutting step S103, thinning step S104, DAF attaching step S105, DAF dividing processing step S106, tape attaching step S107, and supporting substrate peel Step S108, expansion step S109, installation step S110, tape cutting step S111, cleaning step S112, and unloading step S113. These steps are performed under the control of the control device 90. In addition, the order of the steps is not limited to the order shown in FIG. 13.
在搬入步驟S101中，搬送裝置27將基板10由載置台21上之匣C搬送至處理站30之過渡部35，接著，搬送裝置33將基板10由過渡部35搬送至支持基板接著部40。In the carrying-in step S101, the transfer device 27 transfers the substrate 10 from the cassette C on the mounting table 21 to the transition portion 35 of the processing station 30, and then the transfer device 33 transfers the substrate 10 from the transition portion 35 to the support substrate bonding portion 40.
在支持基板接著步驟S102中，如圖3所示地，支持基板接著部40將接著劑塗布在形成基板10之裝置層14側的第一主表面11上而形成接著層42，接著藉由接著層42將支持基板41接著在基板10上。支持基板接著部40例如透過支持基板41將紫外線照射在接著層42上，藉此使接著層42硬化而將支持基板41接著在基板10上。此外，亦可在支持基板41側塗布接著劑取代在第一主表面11上塗布接著劑來進行接著。In the supporting substrate bonding step S102, as shown in FIG. 3, the supporting substrate bonding portion 40 applies an adhesive on the first main surface 11 on the device layer 14 side of the substrate 10 to form a bonding layer 42, and then The layer 42 adheres the support substrate 41 on the substrate 10. The support substrate bonding portion 40 irradiates ultraviolet rays to the bonding layer 42 through the support substrate 41, for example, thereby curing the bonding layer 42 and bonding the support substrate 41 to the substrate 10. Alternatively, an adhesive may be applied on the support substrate 41 side instead of applying the adhesive on the first main surface 11 to perform the adhesion.
在切割步驟S103中，如圖4所示地，切割部100沿將基板10區隔成多數晶片13之分割道，進行基板10之切割。In the dicing step S103, as shown in FIG. 4, the dicing section 100 performs dicing of the substrate 10 along a dividing path that divides the substrate 10 into a plurality of wafers 13.
在薄板化步驟S104中，如圖5所示地，薄板化部200藉由加工與被基板10之支持基板41保護之第一主表面11相反側的第二主表面12，使基板10薄板化。此時，藉由支持基板41保持基板10之第一主表面11側。In the thinning step S104, as shown in FIG. 5, the thinning portion 200 processes the second main surface 12 on the opposite side of the first main surface 11 protected by the support substrate 41 of the substrate 10 to thin the substrate 10. . At this time, the first main surface 11 side of the substrate 10 is held by the support substrate 41.
在DAF附著步驟S105中，如圖6所示地，DAF附著部300將DAF 15附著在已薄板化之基板10的第二主表面12上。例如，在DAF附著步驟S105中，將包含DAF 15之材料的DAF用塗布液塗布在已薄板化之基板10的第二主表面12上。In the DAF attaching step S105, as shown in FIG. 6, the DAF attaching section 300 attaches the DAF 15 to the second main surface 12 of the substrate 10 that has been thinned. For example, in the DAF attaching step S105, a coating liquid for DAF containing a material of DAF 15 is coated on the second main surface 12 of the thinned substrate 10.
DAF用塗布液塗布在基板10之第二主表面12上並形成液膜。藉由乾燥該液膜，形成DAF 15。使用DAF用塗布液時，藉由變更該液膜之膜厚，可變更DAF 15之膜厚。此外，藉由交換DAF用塗布液之瓶子，可簡單地變更DAF 15之材料。The coating liquid for DAF is coated on the second main surface 12 of the substrate 10 to form a liquid film. By drying the liquid film, DAF 15 was formed. When a coating liquid for DAF is used, the film thickness of DAF 15 can be changed by changing the film thickness of the liquid film. In addition, the material of the DAF 15 can be easily changed by exchanging the bottle of the coating liquid for DAF.
此外，在DAF附著步驟S105中，DAF附著部300亦可使預成形為薄膜狀之DAF 15黏貼在已薄板化之基板10的第二主表面12上。因為DAF 15預成形為薄膜狀，所以可防止DAF 15飛散至基板10之周圍。In addition, in the DAF attaching step S105, the DAF attaching portion 300 may also adhere the DAF 15 preformed into a thin film shape to the second main surface 12 of the substrate 10 that has been thinned. Since the DAF 15 is preformed into a film shape, the DAF 15 can be prevented from scattering around the substrate 10.
在DAF分割加工步驟S106中，如圖7所示地，DAF分割加工部400沿晶片13之邊界線分割加工DAF 15。In the DAF division processing step S106, as shown in FIG. 7, the DAF division processing unit 400 divides and processes the DAF 15 along the boundary line of the wafer 13.
此外，可在不進行DAF分割加工步驟S106之情形下進行擴大步驟S109。在擴大步驟S109中藉由擴大晶片13之間隔，可沿晶片13之邊界線撕裂DAF 15。In addition, the expansion step S109 may be performed without performing the DAF division processing step S106. In the enlargement step S109, the DAF 15 can be torn along the boundary line of the wafer 13 by increasing the interval between the wafers 13.
在本實施形態中，DAF分割加工步驟S106係在DAF附著步驟S105後，擴大步驟S109前進行。因此，可使用撕裂性低之DAF 15，故DAF 15之可供選擇種類多。In this embodiment, the DAF division processing step S106 is performed after the DAF attachment step S105 and before the expansion step S109. Therefore, DAF 15 with low tearability can be used, so there are many types of DAF 15 to choose from.
在帶附著步驟S107中，如圖8所示地，黏著帶附著部510將黏著帶51附著在附著DAF 15之基板10的第二主表面12上。In the tape attaching step S107, as shown in FIG. 8, the adhesive tape attaching portion 510 attaches the adhesive tape 51 to the second main surface 12 of the substrate 10 to which the DAF 15 is attached.
在支持基板剝離步驟S108中，如圖9所示地，支持基板剝離部520由基板10剝離支持基板41。支持基板剝離部520例如透過支持基板41將紫外線照射在接著層42上，藉此使藉由支持基板接著步驟S102硬化之接著層42進一步硬化而使黏著力降低。接著層42之黏著力降低後，可藉由剝離操作由基板10輕易地剝離支持基板41。此外，亦可藉由加熱或雷射照射取代紫外線照射，使接著層42之黏著力降低。In the support substrate peeling step S108, as shown in FIG. 9, the support substrate peeling section 520 peels the support substrate 41 from the substrate 10. The support substrate peeling part 520 irradiates ultraviolet rays to the adhesive layer 42 through the support substrate 41, for example, to further harden the adhesive layer 42 cured by the support substrate followed by step S102, thereby reducing the adhesive force. After the adhesion of the layer 42 is reduced, the support substrate 41 can be easily peeled from the substrate 10 by a peeling operation. In addition, it is also possible to reduce the adhesion of the adhesive layer 42 by replacing the ultraviolet irradiation with heating or laser irradiation.
在擴大步驟S109中，如圖10所示地，擴大部530擴大構成與DAF 15附接之基板10的多數晶片13的間隔。藉由擴大晶片13之間隔，可抑制搬送時或拾取時之磨削。In the enlargement step S109, as shown in FIG. 10, the enlargement section 530 enlarges the interval between the plurality of wafers 13 constituting the substrate 10 to which the DAF 15 is attached. By increasing the interval between the wafers 13, it is possible to suppress grinding during conveyance or pickup.
例如，在擴大步驟S109中，使透過DAF 15與基板10附接之黏著帶51呈放射狀地延伸，藉此擴大晶片13之間隔。藉由延伸之黏著帶51可維持擴大晶片13之間隔。For example, in the enlargement step S109, the adhesive tape 51 attached to the substrate 10 through the DAF 15 is radially extended, thereby increasing the interval between the wafers 13. The distance between the enlarged wafers 13 can be maintained by the extended adhesive tape 51.
在安裝步驟S110中，如圖11所示地，安裝部540透過DAF 15及黏著帶51將晶片13之間隔擴大的基板10安裝在框架59上。例如，在安裝步驟S110中，保持黏著帶51之安裝在框架59上的安裝部份52呈平坦，同時使黏著帶51與框架59黏合。因為黏著帶51之安裝在框架59上的安裝部份52未鬆動，所以可維持晶片13之間隔。藉此，如圖11所示地，基板10在擴大晶片13之間隔的狀態下，透過DAF 15及黏著帶51保持在框架59上。In the mounting step S110, as shown in FIG. 11, the mounting portion 540 mounts the substrate 10 with the wafer 13 widened on the frame 59 through the DAF 15 and the adhesive tape 51. For example, in the mounting step S110, the mounting portion 52 of the adhesive tape 51 mounted on the frame 59 is kept flat, and the adhesive tape 51 is adhered to the frame 59 at the same time. Since the mounting portion 52 of the adhesive tape 51 mounted on the frame 59 is not loosened, the interval between the wafers 13 can be maintained. Thereby, as shown in FIG. 11, the substrate 10 is held on the frame 59 through the DAF 15 and the adhesive tape 51 in a state where the interval between the wafers 13 is enlarged.
在清洗步驟S111中，安裝部540在將框架59黏貼在黏著帶51上後，藉由切割器等切斷黏著帶51之未安裝在框架59上的剩餘部份53。In the washing step S111, after the mounting portion 540 adheres the frame 59 to the adhesive tape 51, the remaining portion 53 of the adhesive tape 51 that is not attached to the frame 59 is cut by a cutter or the like.
在清洗步驟S112中，如圖12所示地，清洗部600清洗剝離支持基板41之基板10的第一主表面11。藉此，去除殘存在第一主表面11上之接著層42。In the cleaning step S112, as shown in FIG. 12, the cleaning unit 600 cleans the first main surface 11 of the substrate 10 on which the support substrate 41 is peeled off. Thereby, the adhesive layer 42 remaining on the first main surface 11 is removed.
在搬出步驟S113中，搬送裝置33將基板10由清洗部600搬送至過渡部35，接著，搬送裝置27將基板10由過渡部35搬送至載置台21上之匣C。搬送裝置33或搬送裝置27保持框架59並搬送基板10。由載置台21將匣C搬出至外部。拾取搬出至外部之基板10的每一個晶片13。如此，製成包含晶片13及DAF 15之半導體裝置。In the unloading step S113, the transfer device 33 transfers the substrate 10 from the cleaning section 600 to the transition section 35, and then the transfer device 27 transfers the substrate 10 from the transition section 35 to the cassette C on the mounting table 21. The transfer device 33 or the transfer device 27 holds the frame 59 and transfers the substrate 10. The cassette C is carried out to the outside by the mounting table 21. Each wafer 13 of the substrate 10 carried out is picked up. Thus, a semiconductor device including the wafer 13 and the DAF 15 is manufactured.
此外，在上述基板處理方法中，例如未進行晶片13之積層時等，不需要DAF 15，因此可不進行DAF附著步驟S105及DAF分割加工步驟S106。此時，基板處理系統1處理後之基板10(請參照圖2)在黏著帶51與基板10(晶片13)之間未設置DAF 15，基板10只透過黏著帶51安裝在框架59上。In addition, in the above substrate processing method, for example, when the lamination of the wafer 13 is not performed, the DAF 15 is not required, and therefore the DAF attaching step S105 and the DAF dividing processing step S106 may not be performed. At this time, the substrate 10 (see FIG. 2) processed by the substrate processing system 1 is not provided with the DAF 15 between the adhesive tape 51 and the substrate 10 (wafer 13), and the substrate 10 is mounted on the frame 59 only through the adhesive tape 51.
接著說明本實施形態之基板處理方法的效果。基板處理方法具有：支持基板接著步驟S102，係將支持基板41接著在形成基板10之裝置層14側的第一主表面11上；切割步驟S103，係由與藉由支持基板接著步驟S102接著支持基板41之第一主表面11相反側的第二主表面12進行基板10之隱形切割；及薄板化步驟S104，係研磨藉由切割步驟S103進行隱形切割後之基板10的第二主表面12以使基板10薄板化。Next, the effects of the substrate processing method of this embodiment will be described. The substrate processing method includes: supporting a substrate followed by step S102, where the supporting substrate 41 is adhered to the first main surface 11 on the device layer 14 side of the substrate 10; and a cutting step S103 is performed by supporting the substrate with step S102 The second major surface 12 on the opposite side of the first major surface 11 of the substrate 41 is used for stealth cutting of the substrate 10; The substrate 10 is made thin.
在此考慮例如如專利文獻1記載之習知基板處理方法作為比較例。在習知基板處理方法中，基板10之薄板化時，藉由保護帶保護基板之第一主表面11。關於圖示於圖5中之本實施形態的薄板化步驟S104係透過保護帶將基板10載置在吸盤座202上來進行第二主表面12之研磨。As a comparative example, a conventional substrate processing method described in Patent Document 1 is considered here. In the conventional substrate processing method, when the substrate 10 is thinned, the first main surface 11 of the substrate is protected by a protective tape. Regarding the thinning step S104 of this embodiment shown in FIG. 5, the substrate 10 is placed on the chuck base 202 through a protective tape to polish the second main surface 12.
在如此藉由保護帶保護基板10之第一主表面11的裝置層14的結構中，如本實施形態地先藉由切割步驟S103進行基板10之隱形切割，然後藉由薄板化步驟S104進行基板10之薄板化時，因為保護各晶片13之保護帶的剛性低，所以恐有各晶片13之相對位置變動而缺乏加工穩定性之虞。例如，在薄板化步驟S104中，在薄板化之過程中加工應力作用在基板10上，藉此裂縫由在切割步驟S103中藉由隱形切割形成在基板10內部之改質層16(請參照圖4)朝朝板厚方向伸展，並將基板10分割成多數晶片13。此時，因為由下方保持各晶片13之保護帶柔軟，所以各晶片13之基底不穩定，因此在各晶片13容易產生角破裂。此外，使晶片13之尺寸小型化時，在切割步驟S103中必須增加藉隱形切割產生之改質層16的數目，但因為各個改質層16在基板10之內部膨脹，所以數目增加太多時基板10因改質層16膨脹之影響彎曲而翹曲，恐有無法藉由剛性低之保護帶抑制該翹曲之虞。In such a structure that the device layer 14 of the first main surface 11 of the substrate 10 is protected by the protective tape, as in this embodiment, the invisible cutting of the substrate 10 is first performed by the cutting step S103, and then the substrate is performed by the thinning step S104 When the thickness is reduced to 10, the rigidity of the protective tape that protects each of the wafers 13 is low, so there is a fear that the relative position of each wafer 13 may vary and the processing stability may be lacking. For example, in the thinning step S104, the processing stress acts on the substrate 10 during the thinning process, whereby the crack is formed by the modified layer 16 (see FIG. 6) formed inside the substrate 10 by stealth cutting in the cutting step S103. 4) The substrate 10 is divided into a plurality of wafers 13 while extending in a thickness direction. At this time, since the protective tape holding each wafer 13 from below is soft, the base of each wafer 13 is unstable, and therefore, corner cracks are easily generated in each wafer 13. In addition, when miniaturizing the size of the wafer 13, it is necessary to increase the number of modified layers 16 generated by stealth dicing in the dicing step S103. However, since each modified layer 16 expands inside the substrate 10, the number increases too much The substrate 10 is warped due to the influence of the expansion of the modified layer 16, and there is a possibility that the warpage cannot be suppressed by a protective tape having low rigidity.
對如此之問題，在本實施形態中使用支持基板41取代習知之保護帶來保護基板10之第一主表面11。因為支持基板41藉由接著材安裝在基板10上，所以可使用剛性比習知保護帶高之材料形成之基板作為支持基板41。因此在薄板化步驟S104中，如圖5所示地，在剛性比習知保護帶高之支持基板41上載置基板10的狀態下進行第二主表面12之研磨。藉此，即使基板10在薄板化之過程中分割成多數晶片13，各晶片13位在硬支持基板41上且各晶片13之基礎穩定，因此可抑制在晶片13產生角破裂。此外，即使基板10因在切割步驟S103中藉隱形切割產生之改質層16在基板10之內部膨脹而翹曲，因為在剛性比習知保護帶高之支持基板41上載置基板10的狀態下進行切割，所以可良好地抑制產生基板10之翹曲。由以上可知，本實施形態之基板處理方法可提高半導體裝置之加工穩定性。In response to such a problem, in the present embodiment, a support substrate 41 is used instead of the conventional protection belt to protect the first main surface 11 of the substrate 10. Since the support substrate 41 is mounted on the substrate 10 by an adhesive material, a substrate formed of a material having higher rigidity than a conventional protective tape can be used as the support substrate 41. Therefore, in the thinning step S104, as shown in FIG. 5, the second main surface 12 is polished in a state where the substrate 10 is placed on the support substrate 41 having higher rigidity than the conventional protective tape. Thereby, even if the substrate 10 is divided into a plurality of wafers 13 during the thinning process, each wafer 13 is located on the hard supporting substrate 41 and the foundation of each wafer 13 is stable, so that the occurrence of corner cracks in the wafer 13 can be suppressed. In addition, even if the substrate 10 is warped due to expansion of the modified layer 16 generated by stealth cutting in the cutting step S103 inside the substrate 10, because the substrate 10 is placed on the support substrate 41 having higher rigidity than the conventional protective tape Since dicing is performed, the occurrence of warpage of the substrate 10 can be effectively suppressed. From the above, it can be known that the substrate processing method of this embodiment can improve the processing stability of the semiconductor device.
此外，本實施形態之基板處理方法係在支持基板剝離步驟S108中由基板10剝離支持基板41後，進行擴大步驟S109或安裝步驟S110，因此即使用剛性高之支持基板41保護基板10之第一主表面11來進行切割步驟S103或薄板化步驟S104，亦可在不受支持基板41剛性影響之情形下良好地進行擴大步驟S109或安裝步驟S110。In addition, in the substrate processing method of this embodiment, after the support substrate 41 is peeled from the substrate 10 in the support substrate peeling step S108, the expansion step S109 or the mounting step S110 is performed. The main surface 11 is subjected to the cutting step S103 or the thinning step S104, and the expansion step S109 or the mounting step S110 can be performed well without being affected by the rigidity of the support substrate 41.
此外，本實施形態之基板處理方法係在DAF附著步驟S105後，帶附著步驟S107前，進行沿晶片13之邊界分割加工附著在基板10上之DAF 15的DAF分割加工步驟S106。藉由事先分割DAF 15，可在擴大步驟S109中輕易地擴大多數晶片13之間隔。In addition, the substrate processing method of this embodiment is a DAF division processing step S106 of the DAF 15 attached to the substrate 10 along the boundary of the wafer 13 after the DAF attachment step S105 and before the tape attachment step S107. By dividing the DAF 15 in advance, the interval between most of the wafers 13 can be easily expanded in the expanding step S109.
此外，在本實施形態之基板處理方法中，使用由玻璃形成之玻璃基板作為支持基板41。因為玻璃基板可透射紫外線，所以即使不加熱亦可藉由紫外線使接著劑硬化。因此，可在室溫下實施接著層42的形成及接著層形成後之黏著力的提高或降低等。此外，可加熱接著層以促進接著劑之硬化。In addition, in the substrate processing method of this embodiment, a glass substrate made of glass is used as the support substrate 41. Since the glass substrate can transmit ultraviolet rays, the adhesive can be hardened by ultraviolet rays without heating. Therefore, the formation of the adhesive layer 42 and the increase or decrease of the adhesive force after the adhesive layer is formed can be performed at room temperature. In addition, the adhesive layer may be heated to promote hardening of the adhesive.
[變形例] 參照圖14說明上述實施形態之變形例。如圖14所示地，有時在形成在基板10之第一主表面11上的裝置層14上設置凸塊14a。[Modification] A modification of the above embodiment will be described with reference to FIG. 14. As shown in FIG. 14, bumps 14 a are sometimes provided on the device layer 14 formed on the first main surface 11 of the substrate 10.
在專利文獻1記載之習知方法中，由凸塊14a上方黏貼保護帶。此時，基板10之第一主表面11可藉由在保護帶之表面有無凸塊14a而形成凹凸。因此，在薄板化步驟S104中已薄板化之基板10的第二主表面12的TTV(總厚度變化(total thickness variation))惡化。例如，相較於沒有凸塊14a之部分，基板10中具有凸塊14a之部分容易被研磨，因此研磨後之凹凸變大。此外，因為凸塊14a間產生間隙，所以研磨時研磨液浸入凸塊14a間，因此污染研磨後之基板10。另外，保護帶表面之平面度差，因此恐有在薄板化步驟S104及切割步驟S103等中基板10產生吸附不良之虞。In the conventional method described in Patent Document 1, a protective tape is pasted from above the bumps 14a. At this time, the first main surface 11 of the substrate 10 can be uneven by the presence or absence of bumps 14a on the surface of the protective tape. Therefore, the TTV (total thickness variation) of the second main surface 12 of the thinned substrate 10 in the thinned step S104 is deteriorated. For example, the portion having the bumps 14a in the substrate 10 is easier to be polished than the portion without the bumps 14a, so that the unevenness after the polishing becomes larger. In addition, since a gap is generated between the bumps 14a, the polishing liquid penetrates between the bumps 14a during polishing, and contaminates the substrate 10 after polishing. In addition, since the flatness of the surface of the protective tape is poor, there is a possibility that the substrate 10 may have poor adsorption in the thinning step S104, the cutting step S103, and the like.
對於如此之問題，在本實施形態之變形例中，在圖13之流程圖中所示的支持基板接著步驟S102中，支持基板接著部40如圖14所示地將接著劑塗布在基板10之第一主表面11上並用接著劑填埋凸塊14a之間隙。接著，形成比凸塊14a之高度大的接著層42，藉此填埋裝置層14之凹凸而使表面平坦化。藉由該接著層42將支持基板41接著在基板10上。For such a problem, in the modification of this embodiment, in the support substrate following step S102 shown in the flowchart of FIG. 13, the support substrate bonding unit 40 applies an adhesive to the substrate 10 as shown in FIG. 14. The gap between the bumps 14a is filled on the first main surface 11 with an adhesive. Next, an adhesive layer 42 having a height greater than that of the bumps 14 a is formed, thereby filling the unevenness of the device layer 14 and flattening the surface. The support substrate 41 is adhered to the substrate 10 by the adhesive layer 42.
藉由該結構，可用接著劑填埋凸塊14a間以使裝置層14之表面平坦化，因此可將支持基板41良好地且無間隙地接著在基板10之第一主表面11上。藉此，在薄板化步驟S104中可提高薄板化之基板10的第二主表面12的TTV。此外，在薄板化步驟S104中可防止研磨液在基板10之研磨中浸入凸塊14a間，因此可防止污染研磨後之基板10。再者，因為與吸盤座202抵接的是玻璃基板之支持基板41而非習知保護帶，所以在薄板化步驟S104及切割步驟S103等中可防止基板10之吸附不良。因此，可與裝置層14之元件形狀或大小無關地使接著層42平坦地形成，故可使支持基板41確實地接著在基板10上。With this structure, the space between the bumps 14 a can be filled with an adhesive to flatten the surface of the device layer 14. Therefore, the support substrate 41 can be adhered to the first main surface 11 of the substrate 10 without any gap. Thereby, in the thinning step S104, the TTV of the second main surface 12 of the thinned substrate 10 can be improved. In addition, in the thinning step S104, the polishing liquid can be prevented from immersing between the bumps 14a during the polishing of the substrate 10, and contamination of the polished substrate 10 can be prevented. Furthermore, since the support substrate 41 of the glass substrate is in contact with the chuck holder 202 instead of the conventional protective tape, it is possible to prevent poor adsorption of the substrate 10 in the thinning step S104 and the cutting step S103. Therefore, the bonding layer 42 can be formed flat regardless of the element shape or size of the device layer 14, so that the support substrate 41 can be reliably adhered to the substrate 10.
以上，參照具體例說明了本實施形態。但是，本揭示不限於該等具體例。只要具有本揭示之特徵，本揭示之所屬技術領域中具有通常知識者在該等具體例中增加適當設計變更亦包含在本發明之範圍內。前述各具體例具有之各元件及其配置、條件、形狀等不特別限定於例示者，可適當變更。例如，支持基板接著部40、切割部100、薄板化部200除了參照添附圖式記載在前述本發明之實施形態的具體例以外，前述各具體例具有之各元件只要不產生技術之矛盾，可改變適當組合。The present embodiment has been described above with reference to specific examples. However, this disclosure is not limited to these specific examples. As long as it has the characteristics of the present disclosure, those with ordinary knowledge in the technical field to which the present disclosure pertains to add appropriate design changes to these specific examples are also included in the scope of the present invention. The elements and the arrangement, conditions, shapes, and the like of each of the specific examples described above are not particularly limited to those exemplified, and may be appropriately changed. For example, in addition to the supporting substrate bonding portion 40, the cutting portion 100, and the thinned portion 200 described in the specific examples of the embodiment of the present invention with reference to the accompanying drawings, the elements included in the specific examples may be provided as long as there is no technical conflict Change the appropriate combination.
1‧‧‧基板處理系統1‧‧‧ substrate processing system
10‧‧‧基板10‧‧‧ substrate
11‧‧‧第一主表面11‧‧‧ first major surface
12‧‧‧第二主表面12‧‧‧ second major surface
13‧‧‧晶片13‧‧‧Chip
14‧‧‧裝置層14‧‧‧device layer
14a‧‧‧凸塊14a‧‧‧ bump
15‧‧‧DAF(晶粒附接薄膜)15‧‧‧DAF (die attach film)
16‧‧‧改質層16‧‧‧ Modified layer
20‧‧‧搬出入站20‧‧‧ moved in and out
21‧‧‧載置台21‧‧‧mounting table
22‧‧‧載置板22‧‧‧mounting plate
25、31‧‧‧搬送區域25, 31‧‧‧ Transport area
26、32‧‧‧搬送路26, 32‧‧‧ Transport Road
27、33‧‧‧搬送裝置27, 33‧‧‧ transport device
30‧‧‧處理站30‧‧‧processing station
35‧‧‧過渡部35‧‧‧Transition Department
40‧‧‧支持基板接著部40‧‧‧Support substrate bonding section
41‧‧‧支持基板41‧‧‧Support substrate
42‧‧‧接著層42‧‧‧ Adjacent layer
51‧‧‧黏著帶51‧‧‧ Adhesive tape
52‧‧‧安裝部份52‧‧‧Installation part
53‧‧‧剩餘部份53‧‧‧ remainder
59‧‧‧框架59‧‧‧Frame
90‧‧‧控制裝置90‧‧‧control device
91‧‧‧CPU91‧‧‧CPU
92‧‧‧記錄媒體92‧‧‧Recording Media
93‧‧‧輸入介面93‧‧‧Input interface
94‧‧‧輸出介面94‧‧‧ output interface
100‧‧‧切割部100‧‧‧cutting department
110、311、410‧‧‧基板保持部110, 311, 410‧‧‧ substrate holding section
120‧‧‧基板加工部120‧‧‧Substrate Processing Department
121、421‧‧‧雷射振盪器121, 421‧‧‧laser oscillator
122、422‧‧‧光學系122, 422‧‧‧ Department of Optics
130、430、550‧‧‧移動機構部130, 430, 550‧‧‧ Mobile Department
200‧‧‧薄板化部200‧‧‧ Thinning Department
201‧‧‧旋轉檯201‧‧‧Turntable
202‧‧‧吸盤座202‧‧‧ Suction cup holder
210‧‧‧粗研磨部210‧‧‧ Rough grinding section
211‧‧‧旋轉磨石211‧‧‧rotating millstone
220‧‧‧精加工研磨部220‧‧‧Finishing and grinding department
230‧‧‧損壞層去除部230‧‧‧ Damaged layer removal section
300‧‧‧DAF附著部300‧‧‧DAF attachment
310‧‧‧DAF塗布部310‧‧‧DAF Coating Department
400‧‧‧DAF分割加工部400‧‧‧DAF Split Processing Department
420‧‧‧DAF加工部420‧‧‧DAF Processing Department
510‧‧‧黏著帶附著部510‧‧‧ Adhesive tape attachment
520‧‧‧支持基板剝離部520‧‧‧Support substrate peeling section
530‧‧‧擴大部530‧‧‧Enlarged Department
535‧‧‧黏著帶延伸部535‧‧‧Adhesive tape extension
536‧‧‧黏著帶外周保持部536‧‧‧ Adhesive tape peripheral holding part
537‧‧‧黏著帶推壓部537‧‧‧Adhesive tape pushing part
538‧‧‧黏著帶推壓驅動部538‧‧‧Adhesive tape push drive unit
540‧‧‧安裝部540‧‧‧Mounting Department
547‧‧‧框架保持部547‧‧‧Frame holding department
548‧‧‧黏合部548‧‧‧Adhesion
549‧‧‧平坦保持部549‧‧‧ flat holding section
600‧‧‧清洗部600‧‧‧Cleaning Department
C‧‧‧匣C‧‧‧box
S101‧‧‧搬入步驟S101‧‧‧Moving steps
S102‧‧‧支持基板接著步驟S102‧‧‧Support substrate
S103‧‧‧切割步驟S103‧‧‧Cutting steps
S104‧‧‧薄板化步驟S104‧‧‧Thinning step
S105‧‧‧DAF附著步驟S105‧‧‧DAF attachment steps
S106‧‧‧DAF分割加工步驟S106‧‧‧DAF split processing steps
S107‧‧‧帶附著步驟S107‧‧‧With attachment step
S108‧‧‧支持基板剝離步驟S108‧‧‧Support substrate peeling step
S109‧‧‧擴大步驟S109‧‧‧Expansion steps
S110‧‧‧安裝步驟S110‧‧‧Installation steps
S111‧‧‧帶切斷步驟S111‧‧‧With cutting step
S112‧‧‧清洗步驟S112‧‧‧Cleaning steps
S113‧‧‧搬出步驟S113‧‧‧moving steps
[圖1]係顯示實施形態之基板處理系統的平面圖。 [圖2]係顯示基板處理系統1處理後之基板的立體圖。 [圖3]係顯示在支持基板接著部中支持基板安裝在基板上之狀態的圖。 [圖4]係顯示切割部之圖。 [圖5]係顯示薄板化部之粗研磨部的圖。 [圖6]係顯示DAF附著部之圖。 [圖7]係顯示DAF分割加工部之圖。 [圖8]係顯示黏著帶附著部中之基板及支持基板狀態的圖。 [圖9]係顯示支持基板剝離部中之基板及支持基板狀態的圖。 [圖10]係顯示擴大部之圖。 [圖11]係顯示安裝部之圖。 [圖12]係顯示清洗部中之基板狀態的圖。 [圖13]係實施形態之基板處理方法的流程圖。 [圖14]係顯示實施形態之變形例中之基板積層構造的圖。[Fig. 1] A plan view showing a substrate processing system according to an embodiment. [Fig. 2] A perspective view showing a substrate processed by the substrate processing system 1. [Fig. [Fig. 3] Fig. 3 is a view showing a state where a support substrate is mounted on a substrate in a support substrate adhering portion. [Fig. 4] A view showing a cutting portion. FIG. 5 is a view showing a rough polishing portion of a thinned portion. [Fig. 6] A view showing a DAF attachment portion. [Fig. 7] A view showing a DAF division processing section. [Fig. 8] A view showing a substrate and a support substrate in an adhesive tape attachment portion. [Fig. 9] A view showing a substrate and a state of a support substrate in a support substrate peeling section. [Fig. 10] A diagram showing an enlarged portion. [FIG. 11] A diagram showing a mounting portion. [Fig. 12] A diagram showing a state of a substrate in a cleaning section. 13 is a flowchart of a substrate processing method according to an embodiment. [Fig. 14] A diagram showing a laminated structure of a substrate in a modified example of the embodiment.
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| JP7466996B2 (en) | 2020-06-01 | 2024-04-15 | 株式会社ディスコ | Method for transporting workpieces |
| KR20230154933A (en) * | 2021-03-09 | 2023-11-09 | 도쿄엘렉트론가부시키가이샤 | Semiconductor chip manufacturing method and substrate processing device |
| KR20230161991A (en) * | 2021-03-31 | 2023-11-28 | 린텍 가부시키가이샤 | Method for manufacturing a piece-piece workpiece with a resin film formed thereon, and a manufacturing apparatus for a piece-piece workpiece with a resin film formed thereon |
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| US20150255349A1 (en) * | 2014-03-07 | 2015-09-10 | JAMES Matthew HOLDEN | Approaches for cleaning a wafer during hybrid laser scribing and plasma etching wafer dicing processes |
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