TW201903989A - Sealing film, method of manufacturing electronic component device, and electronic component device - Google Patents

Sealing film, method of manufacturing electronic component device, and electronic component device Download PDF

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TW201903989A
TW201903989A TW107111178A TW107111178A TW201903989A TW 201903989 A TW201903989 A TW 201903989A TW 107111178 A TW107111178 A TW 107111178A TW 107111178 A TW107111178 A TW 107111178A TW 201903989 A TW201903989 A TW 201903989A
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resin layer
sealing
resin
electronic component
film
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TW107111178A
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TWI733014B (en
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野村豐
渡瀨裕介
荻原弘邦
金子知世
鈴木雅彥
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日商日立化成股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

Disclosed is a sealing film for sealing an electronic component, said sealing film being provided with a seal resin layer having: a first resin layer containing a first thermosetting resin and a first inorganic filler; and a second resin layer containing a second thermosetting resin and a second inorganic filler. The curing shrinkage ratio of the second resin layer, which has a sealing surface that is made to face toward the electronic component side when the electronic component is to be sealed, is larger than the curing shrinkage ratio of the first resin layer.

Description

密封薄膜、電子零件裝置的製造方法及電子零件裝置Method for manufacturing sealing film, electronic component device, and electronic component device

本發明關於一種密封薄膜，尤其關於一種密封薄膜、使用了該密封薄膜而成的半導體裝置等的電子零件裝置的製造方法及電子零件裝置，該密封薄膜可用於半導體晶片等的半導體元件的密封、或被配置在印刷線路基板上的電子零件的埋入等。The present invention relates to a sealing film, and particularly to a method for manufacturing a sealing film, an electronic component device such as a semiconductor device using the sealing film, and an electronic component device. The sealing film can be used for sealing semiconductor elements such as semiconductor wafers, Or the embedment of electronic components arranged on a printed wiring board.

伴隨電子機器的輕薄短小化，半導體裝置亦朝向小型化和薄型化發展。並且，亦盛行採用一種與半導體晶片大致相同大小的半導體裝置、或在該半導體裝置上堆疊半導體裝置而成的堆疊式封裝(Package on Package)這樣的構裝形態。所以可預測，今後的半導體裝置的小型化和薄型化會進一步發展。Along with the reduction in weight and thickness of electronic devices, semiconductor devices are also becoming smaller and thinner. In addition, a structure such as a semiconductor device having a size approximately the same as that of a semiconductor wafer, or a package on package in which semiconductor devices are stacked on the semiconductor device is also popular. Therefore, it is expected that the miniaturization and thickness reduction of semiconductor devices will be further developed in the future.

若半導體晶片朝向微細化發展，並且端子數增加，就會變得難以在半導體晶片上設置全部的外部連接用的端子。例如，當設置多數個外部連接用的端子時，會使得端子間的間距(pitch)變窄，並且端子的高度會變低，而會難以確保構裝後的半導體裝置的連接可靠性。因此，為了實現半導體裝置的小型化和薄型化，提案有多數種新的構裝方式。If the semiconductor wafer is going to be miniaturized and the number of terminals is increased, it will become difficult to provide all the terminals for external connection on the semiconductor wafer. For example, when a plurality of terminals for external connection are provided, the pitch between the terminals is narrowed, and the height of the terminals is reduced, which makes it difficult to ensure the connection reliability of the semiconductor device after mounting. Therefore, in order to reduce the size and thickness of semiconductor devices, many new types of mounting methods have been proposed.

例如，已提案有下述構裝方法及使用該構裝方法製成的半導體裝置(例如，參照專利文獻1～4)，該構裝方法是將半導體晶片以適當的間隔進行重新配置後，使用固態或液態的密封樹脂進行密封，然後在所得到的密封成形物的密封樹脂部分進一步設置外部連接用的端子，該半導體晶片是由半導體晶圓所製成並且經單片化而成。For example, there has been proposed a mounting method and a semiconductor device manufactured by using the mounting method (for example, refer to Patent Documents 1 to 4). The mounting method is to rearrange semiconductor wafers at appropriate intervals, and then use a solid state or A liquid sealing resin is used for sealing, and then a terminal for external connection is further provided in the sealing resin portion of the obtained sealing molded article. The semiconductor wafer is made of a semiconductor wafer and is singulated.

重新配置後的半導體晶片的密封，通常是以使用液態或固態的樹脂密封材料的模造成形來實行。在上述的構裝方式中，針對藉由密封所製成的密封成形物，可實施形成線路和形成外部連接用的端子等的步驟，該等步驟用以配置外部連接用的端子。After reconfiguration, the sealing of the semiconductor wafer is usually performed by molding using a liquid or solid resin sealing material. In the above-mentioned assembly method, steps for forming a circuit, forming a terminal for external connection, and the like can be performed with respect to a seal molded article made by sealing, and these steps are used to arrange the terminal for external connection.

因為形成配線和外部端子的步驟是針對密封成形物來實行，所以進行重新配置的半導體晶片越多，便可增加在一次步驟中能夠製作的半導體裝置。因此，正在研究密封成形物的大型化。例如，為了對應於形成線路時的半導體製造裝置的使用，有時會將密封成形物成形為晶圓形狀。此時，利用將晶圓大尺寸化，來謀求製造步驟的精簡化和降低成本(例如，參照專利文獻5和6)。另一方面，為了能夠進一步大尺寸化，並能夠使用比半導體製造裝置更便宜的印刷線路板製造裝置等，亦正在研究密封成形物的面板(panel)化。 [先前專利文獻] (專利文獻)Since the steps of forming the wiring and the external terminals are performed for the sealed molding, the more semiconductor wafers to be repositioned, the more semiconductor devices that can be produced in one step. Therefore, research is being conducted on the increase in the size of the sealed molded article. For example, in order to correspond to the use of a semiconductor manufacturing apparatus at the time of forming a line, a sealed molded product may be formed into a wafer shape. At this time, the size of the wafer is increased to reduce the number of manufacturing steps and reduce costs (for example, refer to Patent Documents 5 and 6). On the other hand, in order to further increase the size and to use a printed wiring board manufacturing apparatus and the like which are cheaper than a semiconductor manufacturing apparatus, the panelization of a sealed molded article is also being studied. [Prior Patent Literature] (Patent Literature)

專利文獻1：日本專利第3616615號公報 專利文獻2：日本特開2001-244372號公報 專利文獻3：日本特開2001-127095號公報 專利文獻4：美國專利申請公開案第2007/205513號說明書 專利文獻5：日本專利第5385247號公報 專利文獻6：日本特開2012-224062號公報Patent Literature 1: Japanese Patent No. 3616615 Patent Literature 2: Japanese Patent Laid-Open No. 2001-244372 Patent Literature 3: Japanese Patent Laid-Open No. 2001-127095 Patent Literature 4: US Patent Application Publication No. 2007/205513 Specification Patent Document 5: Japanese Patent No. 5385247 Patent Document 6: Japanese Patent Laid-Open No. 2012-224062

[發明所欲解決的問題] 然而，若密封成形物大型化，將經熱硬化的密封樹脂冷卻至室溫時，其所產生的密封成形物的翹曲的問題會有變得顯著的傾向。產生在密封成形物的翹曲，會成為切割步驟和重新佈線步驟中的位置偏移的原因，而導致封裝體的可靠性降低。又，若翹曲較大，例如會有下述難以形成用來進行重新佈線的絕緣樹脂層的可能性：當重新佈線用的絕緣樹脂是液態材料時，無法將密封成形物固定在用以塗佈液態材料的塗佈治具上的不良情況等。[Problems to be Solved by the Invention] However, if the seal-molded article is enlarged, the problem of warpage of the seal-molded article generated when the heat-cured sealing resin is cooled to room temperature tends to become significant. The occurrence of warpage in the sealed molded product may cause a positional shift in the cutting step and the rewiring step, and the reliability of the package is lowered. In addition, if the warpage is large, for example, it may be difficult to form an insulating resin layer for rewiring. When the insulating resin for rewiring is a liquid material, it is impossible to fix the sealing molding to the coating. Defects such as coating fixtures for liquid materials.

有鑑於上述情況，本發明的目的在於提供：一種密封薄膜，其能夠充分地抑制密封成形物的翹曲；以及，一種電子零件裝置的製造方法及電子零件裝置，該等方法及裝置使用了該密封薄膜。 [解決問題的技術手段]In view of the foregoing, it is an object of the present invention to provide a sealing film capable of sufficiently suppressing warpage of a seal-molded article; and a method for manufacturing an electronic component device and an electronic component device using the method and the device Sealing film. [Technical means to solve the problem]

本發明的一實施態樣，提供一種密封薄膜，其用以密封電子零件，該密封薄膜具備密封樹脂層，該密封樹脂層具有第一樹脂層與第二樹脂層，該第一樹脂層含有第一熱硬化性樹脂和第一無機填充劑，該第二樹脂層含有第二熱硬化性樹脂和第二無機填充劑。第二樹脂層具有密封面，該密封面在將電子零件密封時朝向電子零件側，並且第二樹脂層和第一樹脂層自密封面側起依序被積層。第二樹脂層的硬化收縮率大於第一樹脂層的硬化收縮率。According to an aspect of the present invention, there is provided a sealing film for sealing electronic parts. The sealing film includes a sealing resin layer having a first resin layer and a second resin layer. The first resin layer includes a first resin layer. A thermosetting resin and a first inorganic filler, and the second resin layer contains a second thermosetting resin and a second inorganic filler. The second resin layer has a sealing surface that faces the electronic component side when the electronic component is sealed, and the second resin layer and the first resin layer are sequentially laminated from the sealing surface side. The hardening shrinkage of the second resin layer is larger than the hardening shrinkage of the first resin layer.

本發明中的一實施態樣的密封薄膜，藉由具有上述構成，而能夠充分地抑制密封成形物的翹曲。The sealing film according to one embodiment of the present invention can sufficiently suppress the warpage of the sealing molded article by having the above-mentioned configuration.

第二樹脂層的硬化收縮率相對於第一樹脂層的硬化收縮率的比，可以超過1且未滿10。The ratio of the curing shrinkage ratio of the second resin layer to the curing shrinkage ratio of the first resin layer may exceed 1 and be less than 10.

第一熱硬化性樹脂和第二熱硬化性樹脂，可以是相同的環氧樹脂或互為不同的環氧樹脂。The first thermosetting resin and the second thermosetting resin may be the same epoxy resin or different epoxy resins.

本發明中的另一實施態樣，提供一種電子零件裝置的製造方法，其具備：埋入電子零件的步驟，其在加熱下，將上述本發明中的一實施態樣的密封薄膜的密封樹脂層、及與該密封樹脂層的密封面相對向配置的電子零件進行按壓，藉此將電子零件埋入密封樹脂層中；及，形成密封層的步驟，其使密封樹脂層硬化，來形成密封樹脂層的硬化物也就是密封有電子零件之密封層。According to another aspect of the present invention, there is provided a method for manufacturing an electronic component device, comprising: a step of embedding an electronic component, which heats the sealing resin of the sealing film according to the one aspect of the present invention under heating; Layer, and an electronic component disposed opposite to the sealing surface of the sealing resin layer, thereby burying the electronic component in the sealing resin layer; and a step of forming a sealing layer, which hardens the sealing resin layer to form a seal The hardened material of the resin layer is a sealing layer in which electronic parts are sealed.

本發明的其他實施態樣，提供一種電子零件裝置，其具備電子零件、及密封有電子零件之密封部。密封部，可以是上述本發明中的密封薄膜的密封樹脂層的硬化物。電子零件，可以在密封部中被第二樹脂層的硬化物包圍。According to another aspect of the present invention, there is provided an electronic component device including an electronic component and a sealing portion sealed with the electronic component. The sealing portion may be a cured product of the sealing resin layer of the sealing film in the present invention. The electronic component may be surrounded by the hardened material of the second resin layer in the sealing portion.

針對電子零件裝置和其製造方法，電子零件可以包含半導體晶片。此時，電子零件裝置一般而言是半導體裝置。 [發明的效果]With regard to the electronic component device and the manufacturing method thereof, the electronic component may include a semiconductor wafer. At this time, the electronic component device is generally a semiconductor device. [Effect of the invention]

根據本發明的一實施態樣，可提供一種密封薄膜，其能夠充分地抑制密封成形物的翹曲。又，亦可提供一種電子零件裝置的製造方法，該電子零件裝置是使用了該密封薄膜之半導體裝置等；及，一種電子零件裝置，其是半導體裝置等。According to an aspect of the present invention, a sealing film can be provided that can sufficiently suppress warpage of a sealed molded article. Further, a method for manufacturing an electronic component device, which is a semiconductor device or the like using the sealing film, and an electronic component device, which is a semiconductor device or the like, may also be provided.

以下，一邊適當參照圖式，一邊詳細地說明本發明的實施形態。但是，本發明並未限定於以下的實施形態。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings as appropriate. However, the present invention is not limited to the following embodiments.

第1圖是顯示一實施形態的密封薄膜的概略剖面圖。本實施形態的密封薄膜，是用以密封電子零件的密封薄膜，其具備密封樹脂層10，該密封樹脂層10是由第一樹脂層1與第二樹脂層2構成的雙層結構，該第一樹脂層1含有第一熱硬化性樹脂和第一無機填充劑，該第二樹脂層2含有第二熱硬化性樹脂和第二無機填充劑。第二樹脂層2側的主面是密封面2S，其在密封電子零件時朝向電子零件側。FIG. 1 is a schematic cross-sectional view showing a sealing film according to an embodiment. The sealing film of this embodiment is a sealing film for sealing electronic parts, and includes a sealing resin layer 10 having a two-layer structure composed of a first resin layer 1 and a second resin layer 2. A resin layer 1 contains a first thermosetting resin and a first inorganic filler, and the second resin layer 2 contains a second thermosetting resin and a second inorganic filler. The main surface on the second resin layer 2 side is a sealing surface 2S, which faces the electronic component side when sealing the electronic component.

第二樹脂層2的硬化收縮率大於第一樹脂層1的硬化收縮率。藉由使用這樣的密封薄膜來密封電子零件，即便在大型的密封成形物的情況下，亦能夠抑制密封薄膜經熱硬化後回溫至室溫時的密封成形物發生翹曲。進一步，能夠以良好的埋入性來密封電子零件。The hardening shrinkage of the second resin layer 2 is larger than the hardening shrinkage of the first resin layer 1. By using such a sealing film to seal electronic parts, even in the case of a large-sized sealing molded article, it is possible to prevent the sealing molded article from warping when the sealing film is returned to room temperature after being cured by heat. Further, the electronic component can be sealed with a good embedding property.

可獲得這樣效果的理由，並未特別限定，但是本發明人認為如下。首先，通常在藉由樹脂密封材料而進行的密封中，半導體晶片等的被密封體的線膨脹係數與樹脂密封材料的線膨脹係數會有差異，所以當樹脂密封材料經熱硬化後回溫至室溫時，樹脂密封材料的收縮量與被密封體的收縮量會產生較大的差異。例如，使用矽晶片來作為半導體晶片並使用環氧樹脂密封材料來製作密封成形物時，相對於矽晶片的線膨脹係數3.4ppm/℃，環氧樹脂密封材料的線膨脹係數，即便在無機填充劑是以較高比率來填充時仍為6ppm/℃左右，伴隨這樣的線膨脹係數的差異，在矽晶片與環氧樹脂密封材料之間的熱收縮量也會產生差異。因此，例如第2圖(a)所示，在利用單層的密封薄膜3來密封半導體晶片20所得到的密封成形物100中，通常，在樹脂密封材料的硬化物3a側，也就是並未埋有收縮量較小的半導體晶片20之側，會產生成為凹陷方向的翹曲。The reason why such an effect can be obtained is not particularly limited, but the present inventors consider the following. First of all, in the sealing with a resin sealing material, the linear expansion coefficient of the sealed body such as a semiconductor wafer and the linear expansion coefficient of the resin sealing material may be different. At room temperature, there is a large difference between the amount of shrinkage of the resin sealing material and the amount of shrinkage of the sealed body. For example, when a silicon wafer is used as a semiconductor wafer and an epoxy resin sealing material is used to produce a sealed molded product, the linear expansion coefficient of the silicon wafer is 3.4 ppm / ° C. The linear expansion coefficient of the epoxy resin sealing material is used even in inorganic filling. When the agent is filled at a high ratio, it is still about 6 ppm / ° C. With such a difference in linear expansion coefficient, there is also a difference in the amount of thermal shrinkage between the silicon wafer and the epoxy resin sealing material. Therefore, for example, as shown in FIG. 2 (a), in the sealed molded article 100 obtained by sealing the semiconductor wafer 20 with the single-layered sealing film 3, the hardened material 3a side of the resin sealing material is usually not formed. On the side where the semiconductor wafer 20 having a smaller shrinkage amount is embedded, warpage in a recessed direction occurs.

相對於此，在本實施形態的密封薄膜的情況，認為會如第2圖(b)所示，當在第二樹脂層2側埋有半導體晶片20時，比起第一樹脂層1，第二樹脂層2的熱收縮量較大，所以第二樹脂層2與半導體晶片20的熱收縮量的總量，會成為與第一樹脂層1的熱收縮量接近的值。在經熱硬化後，伴隨第一樹脂層的硬化物1a的熱收縮產生的翹曲，會與伴隨第二樹脂層的硬化物2a的熱收縮產生的翹曲互相抵消，作為其結果，能夠抑制密封成形物100的翹曲，該密封成形物100是由密封薄膜的硬化物也就是密封部10a和被其所密封的半導體晶片20所構成。In contrast, in the case of the sealing film of this embodiment, as shown in FIG. 2 (b), when the semiconductor wafer 20 is buried on the second resin layer 2 side, compared with the first resin layer 1, the first Since the amount of thermal shrinkage of the two resin layers 2 is large, the total amount of thermal shrinkage of the second resin layer 2 and the semiconductor wafer 20 becomes a value close to that of the first resin layer 1. After the heat curing, the warpage caused by the heat shrinkage of the hardened material 1a of the first resin layer and the warpage caused by the heat shrinkage of the hardened material 2a of the second resin layer cancel each other out. As a result, it is possible to suppress the warpage. The warpage of the sealing molded article 100 is composed of a hardened body of a sealing film, that is, a sealing portion 10 a and a semiconductor wafer 20 sealed by the sealing portion 10 a.

又，針對本實施形態的密封薄膜，硬化收縮率較高的第二樹脂層，相較於硬化收縮率較低的第一樹脂層，在藉由加熱進行硬化的過程中容易具有相對較高的流動性。因此，藉由將電子零件埋在第二樹脂層側，亦能夠以良好的埋入性來密封電子零件，該良好的埋入性是指可抑制產生未被填充的情況。In addition, with the sealing film of the present embodiment, the second resin layer having a higher curing shrinkage rate tends to have a relatively higher hardness in the process of curing by heating than the first resin layer having a lower curing shrinkage rate. fluidity. Therefore, by burying the electronic component on the second resin layer side, the electronic component can also be sealed with a good embedding property, which means that the occurrence of unfilled parts can be suppressed.

進一步，本實施形態的密封薄膜的情況，因為不會受到第一樹脂層和第二樹脂層的彈性係數的限制，所以能夠應用彈性係數較高的材料來作為熱硬化性樹脂。因此，本實施形態的密封薄膜，處理性優異，並且從不易產生下述問題的觀點來看亦優異，該等問題是：半導體晶片等的電子零件的位置偏移、及由於設置重新佈線層後的重新佈線層的應力而造成的翹曲。Furthermore, in the case of the sealing film of this embodiment, since the elastic coefficients of the first resin layer and the second resin layer are not limited, a material with a higher elastic coefficient can be used as the thermosetting resin. Therefore, the sealing film of this embodiment is excellent in handleability, and is also excellent from the viewpoint that the following problems are unlikely to occur, such as the positional displacement of electronic components such as semiconductor wafers, and the provision of a rewiring layer Warping caused by the stress of the rewiring layer.

第一樹脂層和第二樹脂層的硬化收縮率，例如，能夠基於各樹脂層在加熱硬化前後的比重的變化，利用以下的方法來決定。當加熱硬化前在23℃時的樹脂層的比重為d0 ，且在加熱硬化後冷卻至23℃為止的樹脂層的比重為d1 時，能夠藉由下述公式來求得硬化收縮率：硬化收縮率(%)={(d1 －d0 )/d1 }×100。加熱硬化是在特定的壓力下（例如3MPa）實行。用以進行加熱硬化的加熱條件，是以使樹脂層充分地硬化且由於硬化而產生的體積變化變得不會實質地產生的方式來進行調整。又，亦能夠根據各樹脂層在加熱硬化前後的體積變化來求得硬化收縮率。具體而言，能夠基於在加熱硬化前後的體積變化的差值相對於各樹脂層在加熱硬化前的體積的比例來決定。例如，使用壓力-體積-溫度(PVT)試驗機，便能夠從被填充至模具的樹脂層的樣品對於溫度的體積變化，來求得硬化收縮率(收縮量)。此時，藉由將樣品保持在硬化溫度，直到樣品變得不會實質地進行體積變化為止，便能夠求得硬化收縮率。硬化收縮率，不僅是伴隨熱硬化樹脂的硬化反應的收縮，亦包含了由於溶劑的揮發等的伴隨硬化處理而使構成材料減少所造成的收縮。The curing shrinkage ratio of the first resin layer and the second resin layer can be determined by the following method based on, for example, changes in the specific gravity of each resin layer before and after heat curing. When the specific gravity of the resin layer at 23 ° C before heating and curing is d 0 , and the specific gravity of the resin layer after cooling to 23 ° C after heating and curing is d 1 , the curing shrinkage can be obtained by the following formula: Hardening shrinkage (%) = {(d 1 －d 0 ) / d 1 } × 100. Heat hardening is performed under a specific pressure (for example, 3 MPa). The heating conditions for heat curing are adjusted so that the resin layer is sufficiently hardened and the volume change due to the hardening does not substantially occur. In addition, the cure shrinkage can also be determined from the volume change of each resin layer before and after heat curing. Specifically, it can be determined based on the ratio of the difference in volume changes before and after heat curing to the volume of each resin layer before heat curing. For example, using a pressure-volume-temperature (PVT) tester, it is possible to determine the cure shrinkage (shrinkage amount) from the volume change in temperature of the sample of the resin layer filled into the mold. In this case, by keeping the sample at the curing temperature until the sample does not substantially change in volume, the curing shrinkage can be determined. The curing shrinkage ratio includes not only shrinkage accompanied by a curing reaction of a thermosetting resin, but also shrinkage caused by reducing a constituent material due to a hardening process such as volatilization of a solvent.

第二樹脂層的硬化收縮率相對於第一樹脂層的硬化收縮率的比，只要大於1則無特別限制，從更有效地抑制密封成形物的翹曲的觀點來看，可以是1.05以上、1.10以上或1.15以上。第二樹脂層的硬化收縮率相對於第一樹脂層的硬化收縮率的比的上限並無特別限制，例如是未滿10。The ratio of the hardening shrinkage ratio of the second resin layer to the hardening shrinkage ratio of the first resin layer is not particularly limited as long as it is greater than 1. From the viewpoint of more effectively suppressing the warpage of the sealed molded product, it may be 1.05 or more 1.10 or more or 1.15 or more. The upper limit of the ratio of the curing shrinkage ratio of the second resin layer to the curing shrinkage ratio of the first resin layer is not particularly limited, and is, for example, less than 10.

第一樹脂層的硬化收縮率，從抑制翹曲和成形物的尺寸穩定性的觀點來看，例如可以是0.4%以下、0.3%以下或0.2%以下。From the viewpoint of suppressing warpage and dimensional stability of the molded product, the curing shrinkage rate of the first resin layer may be, for example, 0.4% or less, 0.3% or less, or 0.2% or less.

第二樹脂層的硬化收縮率，從利用硬化收縮而更有效地矯正翹曲的觀點來看，例如可以是0.2%以上、0.3%以上或0.4%以上。第二樹脂層的硬化收縮率，從成形物的尺寸穩定性的觀點來看，例如可以是2.0%以下、1.5%以下或1.0%以下。The curing shrinkage rate of the second resin layer may be, for example, 0.2% or more, 0.3% or more, or 0.4% or more from the viewpoint of more effectively correcting warpage by curing shrinkage. From the viewpoint of the dimensional stability of the molded product, the curing shrinkage rate of the second resin layer may be, for example, 2.0% or less, 1.5% or less, or 1.0% or less.

調整第一樹脂層和第二樹脂層的硬化收縮率的方法，並無特別限制。例如，可以藉由選自下述方法中的1種以上來調整第一樹脂層和第二樹脂層的硬化收縮率：選擇互為不同種類的熱硬化性樹脂來作為第一樹脂層所含有的第一硬化性樹脂、及第二樹脂層所含有的第二硬化性樹脂的方法；改變硬化劑或硬化觸媒的種類及/或含量的方法；以及，在形成第一樹脂層和第二樹脂層的過程中改變熱歷程的程度來調整硬化率的方法。The method of adjusting the curing shrinkage ratio of the first resin layer and the second resin layer is not particularly limited. For example, the curing shrinkage of the first resin layer and the second resin layer can be adjusted by one or more selected from the following methods: selecting different types of thermosetting resins as the first resin layer A method of the first curable resin and a second curable resin contained in the second resin layer; a method of changing the type and / or content of a curing agent or a curing catalyst; and forming the first resin layer and the second resin The method of adjusting the hardening rate by changing the degree of thermal history during the layer process.

當是利用熱歷程的方法時，藉由增大在形成樹脂層的過程中的熱歷程，便能夠提高硬化率。一般而言，若硬化率變高，自其狀態進行加熱硬化的硬化收縮率就會有變小的傾向。熱歷程的大小，例如能夠藉由用以形成第一樹脂層和第二樹脂層的乾燥溫度及乾燥時間來調整。亦可以藉由下述方式來相對地提高第一樹脂層的硬化率：將用以形成第二樹脂層的清漆狀的樹脂組成物塗佈在第一樹脂層上，並使塗佈後的清漆狀樹脂組成物與第一樹脂層一起加熱，便能夠使第一樹脂層所受到的熱歷程比第二樹脂層所受到的熱歷程更大。硬化率，例如能夠基於利用示差掃描熱量測定裝置測得的硬化發熱量來評價。以用於形成樹脂層的樹脂組成物(無溶劑或清漆)中的硬化發熱量作為基準(硬化率0%)計，便能夠根據樹脂層相對於上述基準的硬化發熱量的比，來求得硬化率。When using a thermal history method, by increasing the thermal history during the formation of the resin layer, the hardening rate can be increased. Generally, if the hardening rate is high, the hardening shrinkage rate of heat hardening from its state tends to be small. The size of the thermal history can be adjusted, for example, by the drying temperature and drying time for forming the first resin layer and the second resin layer. The hardening rate of the first resin layer can also be relatively increased by applying a varnish-like resin composition to form the second resin layer on the first resin layer, and applying the varnish after coating. If the resinous composition is heated together with the first resin layer, the thermal history of the first resin layer can be made larger than that of the second resin layer. The hardening rate can be evaluated, for example, based on the hardened calorific value measured by a differential scanning calorimeter. The hardening heat value in the resin composition (no solvent or varnish) used to form the resin layer can be used as a reference (hardening rate of 0%), and it can be calculated from the ratio of the hardening heat value of the resin layer to the above reference. Hardening rate.

第一樹脂層和第二樹脂層的厚度，並無特別限制，例如，可以各自是30～800μm、50～500μm或80～300μm。只要厚度是30μm以上，尤其容易獲得電子零件的良好的埋入性。只要厚度是800μm以下，便能夠以更高的水準來獲得本發明的效果。第一樹脂層和第二樹脂層的厚度，可以各自略同，亦可以各自不同，當為不同時，從抑制翹曲和電子零件的薄型化的觀點來看，第一樹脂層的厚度可以比第二樹脂層的厚度更薄。第一樹脂層和第二樹脂層的合計厚度(密封樹脂層的厚度)，並無特別限制，可以是50～1000μm。The thickness of the first resin layer and the second resin layer is not particularly limited, and may be, for example, 30 to 800 μm, 50 to 500 μm, or 80 to 300 μm. As long as the thickness is 30 μm or more, it is particularly easy to obtain a good embedding property of an electronic component. As long as the thickness is 800 μm or less, the effect of the present invention can be obtained at a higher level. The thicknesses of the first resin layer and the second resin layer may be slightly the same or different from each other. When the thicknesses of the first resin layer and the second resin layer are different, the thickness of the first resin layer may be smaller than that from the viewpoint of suppressing warpage and thinning of electronic parts. The thickness of the second resin layer is thinner. The total thickness of the first resin layer and the second resin layer (thickness of the sealing resin layer) is not particularly limited, and may be 50 to 1000 μm.

第一樹脂層含有第一熱硬化性樹脂和第一無機填充劑，第二樹脂層含有第二熱硬化性樹脂和第二無機填充劑。第一熱硬化性樹脂和第二熱硬化性樹脂，可以相同，亦可以互為不同，但是藉由組合互為不同的熱硬化性樹脂，可成為用以將第一樹脂層和第二樹脂層的硬化收縮率設為不同的方法。第一熱硬化性樹脂和第二熱硬化性樹脂，可以各自是以下所說明的熱硬化性樹脂。此處，所謂的「相同」，意指作為熱硬化性樹脂的化合物的結構實質上相同。The first resin layer contains a first thermosetting resin and a first inorganic filler, and the second resin layer contains a second thermosetting resin and a second inorganic filler. The first thermosetting resin and the second thermosetting resin may be the same or different from each other, but by combining different thermosetting resins from each other, the first resin layer and the second resin layer can be used. The hardening shrinkage is set to different methods. Each of the first thermosetting resin and the second thermosetting resin may be a thermosetting resin described below. Here, "same" means that the structures of the compounds as the thermosetting resin are substantially the same.

熱硬化性樹脂，只要是可藉由熱硬化反應來形成交聯結構體之化合物即可，作為其例，可列舉：環氧樹脂、苯酚樹脂、不飽和醯亞胺樹脂、氰酸酯樹脂、異氰酸酯樹脂、苯并噁嗪(benzoxazine)樹脂、環氧丙烷(oxetane)樹脂、胺樹脂、不飽和聚酯樹脂、烯丙樹脂、雙環戊二烯樹脂、矽氧樹脂、三氮雜苯樹脂、及三聚氰胺樹脂。該等可以單獨使用1種，亦可以併用2種以上。該等熱硬化性樹脂，能夠依據需要組合硬化劑及/或硬化觸媒。從流動性優異、適合用於電子零件的埋入等觀點來看，能夠使用環氧樹脂。The thermosetting resin may be any compound that can form a crosslinked structure by a thermosetting reaction. Examples thereof include epoxy resin, phenol resin, unsaturated fluorene resin, cyanate resin, Isocyanate resin, benzoxazine resin, oxetane resin, amine resin, unsaturated polyester resin, allyl resin, dicyclopentadiene resin, silicone resin, triazabenzene resin, and Melamine resin. These may be used individually by 1 type, and may use 2 or more types together. These thermosetting resins can be combined with a curing agent and / or a curing catalyst as necessary. Epoxy resin can be used from the viewpoints of excellent fluidity and being suitable for embedding in electronic parts.

環氧樹脂，並無特別限定，只要是在1分子中具有2個以上的環氧基(或環氧丙基)之化合物即可。作為環氧樹脂，例如可列舉：雙酚A型環氧樹脂、雙酚AP型環氧樹脂(1,1-雙(4-羥苯基)-1-苯基乙烷二環氧丙基醚)、雙酚AF型環氧樹脂(2,2-雙(4-羥苯基)六氟丙烷二環氧丙基醚)、雙酚B型環氧樹脂(2,2-雙(4-羥苯基)丁烷二環氧丙基醚)、雙酚BP型環氧樹脂(雙(4-羥苯基)二苯甲烷二環氧丙基醚)、雙酚C型環氧樹脂(2,2-雙(3-甲基-4-羥苯基)丙烷二環氧丙基醚)、雙酚E型環氧樹脂(1,1-雙(4-羥苯基)乙烷二環氧丙基醚)、雙酚F型環氧樹脂、雙酚G型環氧樹脂(2,2-雙(4-羥基-3-異丙苯基)丙烷二環氧丙基醚)、雙酚M型環氧樹脂(1,3-雙[2-(4-羥苯基)-2-丙基]苯二環氧丙基醚)、雙酚P型環氧樹脂(1,4-雙(2-(4-羥苯基)-2-丙基)苯二環氧丙基醚))、雙酚PH型環氧樹脂(5,5’-(1-甲基亞乙基)-雙[1,1’-(二苯)-2-醇]丙烷二環氧丙醚)、雙酚TMC型環氧樹脂(1,1-雙(4-羥苯基)-3,3,5-三甲基環己烷二環氧丙基醚)、雙酚Z型環氧樹脂(1,1-雙(4-羥苯基)環己烷二環氧丙基醚)、己二醇雙酚S二環氧丙基醚等的雙酚S型環氧樹脂、酚醛清漆型環氧樹脂(苯酚酚醛清漆型環氧樹脂等)、聯苯型環氧樹脂、聯苯芳烷型環氧樹脂、萘型環氧樹脂、酚類與具有酚性羥基之芳香族醛之縮合物的環氧化物、雙環戊二烯型環氧樹脂、雙環戊二烯芳烷型環氧樹脂、聯二甲酚二環氧丙基醚等的聯二甲酚(bixylenol)型環氧樹脂、氫化雙酚A環氧丙基醚等的氫化雙酚A型環氧樹脂、及該等的二元酸改質二環氧丙基醚型環氧樹脂；三聚異氰酸參(2,3-環氧基丙基)酯；及，脂肪族環氧樹脂。The epoxy resin is not particularly limited as long as it is a compound having two or more epoxy groups (or epoxypropyl groups) in one molecule. Examples of the epoxy resin include bisphenol A type epoxy resin and bisphenol AP type epoxy resin (1,1-bis (4-hydroxyphenyl) -1-phenylethane diepoxypropyl ether). ), Bisphenol AF epoxy resin (2,2-bis (4-hydroxyphenyl) hexafluoropropane diglycidyl ether), bisphenol B epoxy resin (2,2-bis (4-hydroxy Phenyl) butane diglycidyl ether), bisphenol BP epoxy resin (bis (4-hydroxyphenyl) diphenylmethane diglycidyl ether), bisphenol C epoxy resin (2, 2-bis (3-methyl-4-hydroxyphenyl) propane diglycidyl ether), bisphenol E epoxy resin (1,1-bis (4-hydroxyphenyl) ethane diglycidyl Ether), bisphenol F-type epoxy resin, bisphenol G-type epoxy resin (2,2-bis (4-hydroxy-3-isopropylphenyl) propane diglycidyl ether), bisphenol M type Epoxy resin (1,3-bis [2- (4-hydroxyphenyl) -2-propyl] phenylenedioxypropyl ether), bisphenol P-type epoxy resin (1,4-bis (2- (4-hydroxyphenyl) -2-propyl) phenylenedioxypropyl ether)), bisphenol PH epoxy resin (5,5 '-(1-methylethylene) -bis [1, 1 '-(diphenyl) -2-ol] propane diglycidyl ether), bisphenol TMC epoxy resin (1,1-bis (4-hydroxyphenyl) -3,3,5-trimethyl Cyclohexane diglycidyl ether), bisphenol Z epoxy Resin (1,1-bis (4-hydroxyphenyl) cyclohexane diglycidyl ether), hexanediol bisphenol S diglycidyl ether, bisphenol S type epoxy resin, novolac type Epoxy resin (phenol novolac epoxy resin, etc.), biphenyl epoxy resin, biphenylarane epoxy resin, naphthalene epoxy resin, condensation products of phenols and aromatic aldehydes with phenolic hydroxyl groups Epoxy resin, dicyclopentadiene epoxy resin, dicyclopentadiene arane epoxy resin, bixylenol epoxy resin, bixylenol epoxy resin, hydrogenated Hydrogenated bisphenol A type epoxy resins such as bisphenol A epoxy propyl ether, and dibasic acid modified diglycidyl ether type epoxy resins; trimeric isocyanate (2,3- Epoxypropyl) esters; and, aliphatic epoxy resins.

作為環氧樹脂，能夠使用市售品。作為市售的環氧樹脂，可列舉：DIC股份有限公司製造的EXA4700(4官能萘型環氧樹脂)、日本化藥股份有限公司製造的NC-7000(含有萘骨架之多官能固態環氧樹脂)等的萘型環氧樹脂；日本化藥股份有限公司製造的EPPN-502H(三酚環氧樹脂)等的酚類與具有酚性羥基之芳香族醛之縮合物的環氧化物；DIC股份有限公司製造的EPICLON HP-7200H(含有雙環戊二烯骨架之多官能固態環氧樹脂)等的雙環戊二烯芳烷型環氧樹脂；日本化藥股份有限公司製造的NC-3000H(含有聯苯骨架之多官能固態環氧樹脂)等的聯苯芳烷型環氧樹脂；DIC股份有限公司製造的EPICLON N660和EPICLON N690、日本化藥股份有限公司製造的EOCN-104S等的酚醛清漆型環氧樹脂；日產化學工業股份有限公司製造的TEPIC等三聚異氰酸參(2,3-環氧基丙基)酯、DIC股份有限公司製造的EPICLON 860、EPICLON 900-IM、EPICLON EXA-4816及EPICLON EXA-4822、ASAHI-CIBA股份有限公司製造的Araldite AER280、東都化成股份有限公司製造的Epotec YD 134、三菱化學股份有限公司製造的jER834、jER872、住友化學股份有限公司製造的ELA-134、三菱化學股份有限公司製造的EPIKOTE 807、EPIKOTE 815、EPIKOTE 825、EPIKOTE 827、EPIKOTE 828、EPIKOTE 834、EPIKOTE 1001、EPIKOTE 1004、EPIKOTE 1007、EPIKOTE 1009、陶氏化學公司製造的DER-330、DER-301、DER-361、東都化成股份有限公司製造的YD8125、YDF8170等的雙酚A型環氧樹脂；三菱化學股份有限公司製造的jER 806等的雙酚F型環氧樹脂；DIC股份有限公司製造的EPICLON HP-4032等的萘型環氧樹脂；DIC股份有限公司製造的EPICLON HP-4032等的萘型環氧樹脂；DIC股份有限公司製造的EPICLON N-740等的苯酚酚醛清漆型環氧樹脂；NAGASE CHEMTEX股份有限公司製造的DENACOL DLC301等的脂肪族環氧樹脂(以上，皆為商品型號)。該等環氧樹脂，可以單獨使用1種，亦可以併用2種以上。As the epoxy resin, a commercially available product can be used. Examples of commercially available epoxy resins include EXA4700 (4-functional naphthalene-type epoxy resin) manufactured by DIC Corporation, and NC-7000 (a polyfunctional solid epoxy resin containing a naphthalene skeleton) manufactured by Nippon Kayaku Co., Ltd. ) And other naphthalene-type epoxy resins; epoxides of condensation products of phenols such as EPPN-502H (triphenol epoxy resin) manufactured by Nippon Kayaku Co., Ltd. and aromatic aldehydes having phenolic hydroxyl groups; DIC Corporation Dicyclopentadiene arane type epoxy resin such as EPICLON HP-7200H (multifunctional solid epoxy resin containing a dicyclopentadiene skeleton) manufactured by Japan Co., Ltd .; NC-3000H (containing Multifunctional solid epoxy resin with benzene skeleton) and other biphenylarane type epoxy resins; EPICLON N660 and EPICLON N690 manufactured by DIC Corporation, and novolac type rings such as EOCN-104S manufactured by Nippon Kayaku Co., Ltd. Oxyresin; TEPIC and other trimeric isocyanate (2,3-epoxypropyl) esters manufactured by Nissan Chemical Industry Co., Ltd., EPICLON 860, EPICLON 900-IM, EPICLON EXA-4816 manufactured by DIC Corporation And EPICLON EXA-4822, A Araldite AER280 manufactured by SAHI-CIBA Co., Ltd., Epotec YD 134 manufactured by Todo Chemical Co., Ltd., jER834, jER872 manufactured by Mitsubishi Chemical Co., Ltd., ELA-134 manufactured by Sumitomo Chemical Co., Ltd., and manufactured by Mitsubishi Chemical Co., Ltd. EPIKOTE 807, EPIKOTE 815, EPIKOTE 825, EPIKOTE 827, EPIKOTE 828, EPIKOTE 834, EPIKOTE 1001, EPIKOTE 1004, EPIKOTE 1007, EPIKOTE 1009, DER-330, DER-301, DER-361 manufactured by The Dow Chemical Company, Toto Bisphenol A epoxy resins such as YD8125 and YDF8170 manufactured by Chemical Co., Ltd .; Bisphenol F epoxy resins such as jER 806 manufactured by Mitsubishi Chemical Corporation; EPICLON HP-4032 manufactured by DIC Corporation Naphthalene-type epoxy resins; naphthalene-type epoxy resins such as EPICLON HP-4032 manufactured by DIC Corporation; phenol novolac-type epoxy resins such as EPICLON N-740 manufactured by DIC Corporation; manufactured by NAGASE CHEMTEX Corporation Aliphatic epoxy resins such as DENACOL DLC301 (the above are all product models). These epoxy resins may be used individually by 1 type, and may use 2 or more types together.

第一樹脂層中的第一熱硬化性樹脂的含量，即便在後述的無機填充劑的存在下，從充分地確保薄膜形成性的觀點來看，以第一樹脂層的總量作為基準計，可以是5質量%以上、10質量%以上或15質量%以上。從使硬化收縮進一步降低的觀點來看，第一樹脂層中的第一熱硬化性樹脂的含量，以第一樹脂層的總量作為基準計，可以是40質量%以下、30質量%以下或20質量%以下。The content of the first thermosetting resin in the first resin layer is based on the total amount of the first resin layer from the viewpoint of sufficiently ensuring the film formability even in the presence of an inorganic filler described later. It may be 5 mass% or more, 10 mass% or more, or 15 mass% or more. From the viewpoint of further reducing curing shrinkage, the content of the first thermosetting resin in the first resin layer may be 40% by mass or less, 30% by mass or less based on the total amount of the first resin layer. 20% by mass or less.

第二樹脂層中的第二熱硬化性樹脂的含量，從更有效地矯正由於硬化收縮所造成的翹曲的觀點來看，以第二樹脂層的總量作為基準計，可以是10質量%、15質量%以上或20質量%以上。從密封成形物的尺寸穩定性的觀點來看，第二樹脂層中的第二熱硬化性樹脂的含量，以第二樹脂層的總量作為基準計，可以是45質量%以下、35質量%以下或30質量%以下。The content of the second thermosetting resin in the second resin layer may be 10% by mass based on the total amount of the second resin layer from the viewpoint of more effectively correcting warpage due to curing shrinkage. 15% or more or 20% by mass or more. From the viewpoint of the dimensional stability of the sealed molded product, the content of the second thermosetting resin in the second resin layer may be 45% by mass or less and 35% by mass based on the total amount of the second resin layer. Below or 30% by mass.

能夠與熱硬化性樹脂組合的硬化劑，並無特別限定，例如當使用環氧樹脂作為熱硬化性樹脂時，硬化劑可以是在1分子中具有2個以上的可與環氧基(環氧丙基)進行反應的反應基之化合物。硬化劑可以單獨使用1種，亦可以併用2種以上。The curing agent that can be combined with the thermosetting resin is not particularly limited. For example, when an epoxy resin is used as the thermosetting resin, the curing agent may have two or more epoxy groups (epoxy groups) in one molecule. Propyl) A reactive group compound. The hardener may be used singly or in combination of two or more kinds.

作為硬化劑，例如可列舉：苯酚樹脂、酸酐、咪唑化合物、脂肪族胺、脂環族胺。Examples of the curing agent include a phenol resin, an acid anhydride, an imidazole compound, an aliphatic amine, and an alicyclic amine.

作為苯酚樹脂，只要是在1分子中具有2個以上的酚性羥基之化合物，並無特別限制。作為苯酚樹脂，例如可列舉：在酸性觸媒下，使酚類化合物或萘酚類化合物與醛類化合物縮合或共縮合所獲得之樹脂，前述酚類是苯酚、甲酚、二甲酚、間苯二酚、鄰苯二酚、雙酚A及雙酚F等，前述萘酚類是α-萘酚、β-萘酚及二羥基萘等，前述醛類是甲醛、乙醛、丙醛、苯甲醛及柳醛等；聯苯骨架型苯酚樹脂；對二甲苯改質苯酚樹脂；間二甲苯/對二甲苯改質苯酚樹脂；三聚氰胺改質苯酚樹脂；萜烯改質苯酚樹脂；雙環戊二烯改質苯酚樹脂；環戊二烯改質苯酚樹脂；多環芳香環改質苯酚樹脂；及，二甲苯改質萘酚樹脂等。The phenol resin is not particularly limited as long as it is a compound having two or more phenolic hydroxyl groups in one molecule. Examples of the phenol resin include a resin obtained by condensing or co-condensing a phenol compound or a naphthol compound with an aldehyde compound under an acid catalyst. The phenols are phenol, cresol, xylenol, m-phenol Resorcinol, catechol, bisphenol A, bisphenol F, etc., the aforementioned naphthols are α-naphthol, β-naphthol, and dihydroxynaphthalene, and the aforementioned aldehydes are formaldehyde, acetaldehyde, propionaldehyde, Benzaldehyde and salicylaldehyde; biphenyl skeleton phenol resin; p-xylene modified phenol resin; m-xylene / p-xylene modified phenol resin; melamine modified phenol resin; terpene modified phenol resin; dicyclopentadiene Olefin modified phenol resin; cyclopentadiene modified phenol resin; polycyclic aromatic ring modified phenol resin; and xylene modified naphthol resin.

作為苯酚樹脂，能夠使用市售品。作為市售的苯酚樹脂，例如可列舉：大日本油墨化學工業股份有限公司製造的PHENOLITE LF 2882、PHENOLITE LF 2822、PHENOLITE TD-2090、PHENOLITE TD-2149、PHENOLITE VH-4150及PHENOLITE VH4170；旭有機材料工業股份有限公司製造的PAPS-PN2；三井化學股份有限公司製造的XLC-LL及XLC-4L；新日鐵住金化學股份有限公司製造的SN-100、SN-180、SN-300、SN-395及SH-400；本州化學工業股份有限公司製造的Tris P-HAP、Tris P-PA、Tris P-PHBA、CyRS-PRD4及MTPC；Air Water股份有限公司製造的SK resin HE910-10(以上，皆為商品型號)。As the phenol resin, a commercially available product can be used. Examples of commercially available phenol resins include PHENOLITE LF 2882, PHENOLITE LF 2822, PHENOLITE TD-2090, PHENOLITE TD-2149, PHENOLITE VH-4150, and PHENOLITE VH4170 manufactured by Dainippon Ink Chemical Industry Co., Ltd. Industrial Co., Ltd. PAPS-PN2; Mitsui Chemical Co., Ltd. XLC-LL and XLC-4L; Nippon Steel & Sumitomo Chemical Co., Ltd. SN-100, SN-180, SN-300, SN-395 And SH-400; Tris P-HAP, Tris P-PA, Tris P-PHBA, CyRS-PRD4 and MTPC manufactured by Honshu Chemical Industry Co., Ltd .; SK resin HE910-10 (above, all Is the product model).

硬化劑的含量，並無特別限定，例如當使用環氧樹脂作為熱硬化性樹脂、並使用苯酚樹脂作為硬化劑時，環氧基與酚性羥基的當量比(環氧基/酚性羥基)，可以是0.5～3.0或1.0～1.5。當是其他硬化劑時，環氧基與可與環氧基進行反應的反應基的當量比(環氧基/可與環氧基進行反應的反應基)，可以是0.5～3.0或1.0～1.5。The content of the hardener is not particularly limited. For example, when an epoxy resin is used as the thermosetting resin and a phenol resin is used as the hardener, the equivalent ratio of epoxy group to phenolic hydroxyl group (epoxy group / phenolic hydroxyl group) It can be 0.5 to 3.0 or 1.0 to 1.5. When it is another hardener, the equivalent ratio of the epoxy group to the reactive group capable of reacting with the epoxy group (epoxy group / reactive group capable of reacting with the epoxy group) may be 0.5 to 3.0 or 1.0 to 1.5 .

可與環氧樹脂組合的硬化觸媒，並無特別限制，較佳是胺系、咪唑系、尿素系或磷系硬化觸媒。作為胺系硬化觸媒，可列舉：1,8-重氮雜雙環[5.4.0]-7-十一烯、1,5-重氮雜雙環[4.3.0]-5-壬烯等。作為咪唑系硬化觸媒，可列舉：2-乙基-4甲基咪唑、1-氰乙基-2-乙基-4-甲基咪唑等。作為尿素硬化觸媒，可列舉：3-苯基-1,1-二甲脲等。作為磷系硬化觸媒，可列舉：三苯膦及其加成反應物、(4-羥苯基)二苯膦、雙(4-羥苯基)苯膦、參(4-羥苯)膦等。該等之中，尤其是咪唑系硬化促進劑，其衍生物豐富並容易獲得期望的活性溫度。作為咪唑系硬化促進劑的市售品，例如可列舉：四國化成工業股份有限公司製造的2PHZ-PW及2P4MZ。The hardening catalyst that can be combined with the epoxy resin is not particularly limited, and an amine-based, imidazole-based, urea-based, or phosphorus-based hardening catalyst is preferred. Examples of the amine-based hardening catalyst include 1,8-diazabicyclo [5.4.0] -7-undecene, 1,5-diazabicyclo [4.3.0] -5-nonene, and the like. Examples of the imidazole-based curing catalyst include 2-ethyl-4methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, and the like. Examples of the urea curing catalyst include 3-phenyl-1,1-dimethylurea and the like. Examples of the phosphorus-based curing catalyst include triphenylphosphine and its addition reactants, (4-hydroxyphenyl) diphenylphosphine, bis (4-hydroxyphenyl) phenylphosphine, and ginseng (4-hydroxyphenyl) phosphine Wait. Among these, especially imidazole-based hardening accelerators are rich in derivatives and easily obtain desired activity temperatures. Examples of commercially available products of the imidazole-based hardening accelerator include 2PHZ-PW and 2P4MZ manufactured by Shikoku Chemical Industry Co., Ltd.

硬化觸媒的含量，並無特別限制，例如相對於熱硬化性樹脂的合計量100質量份，可以是0.05～1.0質量份或0.1～0.5質量份。The content of the curing catalyst is not particularly limited, and may be, for example, 0.05 to 1.0 part by mass or 0.1 to 0.5 part by mass with respect to 100 parts by mass of the total amount of the thermosetting resin.

第一無機填充劑和第二無機填充劑，可以是相同種類，亦可以是互為不同的種類。The first inorganic filler and the second inorganic filler may be the same type or different types from each other.

作為無機填充劑，例如可列舉：硫酸鋇、鈦酸鋇、非晶二氧化矽、結晶型二氧化矽、熔融二氧化矽、球狀二氧化矽、滑石、黏土、碳酸鎂、碳酸鈣、氧化鋁、氫氧化鋁、氮化矽、氮化鋁等的粒子。從具有較小的熱膨脹係數而容易獲得期望的硬化膜特性這樣的觀點來看，作為無機填充劑，較佳是二氧化矽粒子。無機填充劑可以單獨使用1種，亦可以併用2種以上。無機填充劑的形狀，不限於球狀，亦可以是片狀(flake，板狀)或纖維狀。第二樹脂層中所包含的第二無機填充劑，從電子零件的埋入性的觀點來看，可以是能夠容易獲得流動性的球狀無機填充劑。Examples of the inorganic filler include barium sulfate, barium titanate, amorphous silica, crystalline silica, fused silica, spherical silica, talc, clay, magnesium carbonate, calcium carbonate, and oxidation. Particles of aluminum, aluminum hydroxide, silicon nitride, aluminum nitride, etc. From the viewpoint of having a small thermal expansion coefficient and easily obtaining desired cured film characteristics, as the inorganic filler, silicon dioxide particles are preferred. The inorganic filler may be used alone or in combination of two or more. The shape of the inorganic filler is not limited to a spherical shape, and may also be a flake shape or a fibrous shape. The second inorganic filler contained in the second resin layer may be a spherical inorganic filler capable of easily obtaining fluidity from the viewpoint of embedding properties of electronic components.

無機填充劑可以被表面改質。表面改質的手法並未特別限定。使用矽烷耦合劑的方法，因為簡便，並且能夠利用具有種類豐富的官能基之矽烷耦合劑，而容易賦予期望的特性。作為矽烷耦合劑，例如可列舉：烷基矽烷、烷氧基矽烷、乙烯基矽烷、環氧基矽烷、胺基矽烷、丙烯基矽烷、甲基丙烯基矽烷、巰基矽烷、硫化物矽烷、異氰酸酯矽烷、硫基矽烷、苯乙烯基矽烷、及烷基氯矽烷。Inorganic fillers can be surface modified. The method of surface modification is not particularly limited. The method using a silane coupling agent is simple, and can use a silane coupling agent having a wide variety of functional groups to easily impart desired characteristics. Examples of the silane coupling agent include alkyl silane, alkoxy silane, vinyl silane, epoxy silane, amino silane, acryl silane, methacryl silane, mercapto silane, sulfide silane, and isocyanate silane. , Thiosilanes, styrylsilanes, and alkylchlorosilanes.

作為矽烷耦合劑的具體例，可列舉：甲基三甲氧基矽烷、二甲基二甲氧基矽烷、三甲基甲氧基矽烷、甲基三乙氧基矽烷、甲基三苯氧基矽烷、乙基三甲氧基矽烷、正丙基三甲氧基矽烷、二異丙基二甲氧基矽烷、異丁基三甲氧基矽烷、二異丁基二甲氧基矽烷、異丁基三乙氧基矽烷、正己基三甲氧基矽烷、正己基三乙氧基矽烷、環己基甲基二甲氧基矽烷、正辛基三乙氧基矽烷、正十二烷基甲氧基矽烷、苯基三甲氧基矽烷、二苯基二甲氧基矽烷、三苯基矽醇、甲基三氯矽烷、二甲基二氯矽烷、三甲基氯矽烷、正辛基二甲基氯矽烷、四乙氧基矽烷、3-胺丙基三甲氧基矽烷、3-胺丙基三乙氧基矽烷、3-(2-胺乙基)胺丙基三甲氧基矽烷、3-(2-胺乙基)胺丙基甲基二甲氧基矽烷、3-苯基胺丙基三甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二甲氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、3-環氧丙氧基丙基甲基二甲氧基矽烷、雙[3-(三乙氧基矽基)丙基]二硫化物、雙[3-(三乙氧基矽基)丙基]四硫化物、乙烯基三乙醯氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、乙烯基三異丙氧基矽烷、烯丙基三甲氧基矽烷、二烯丙基二甲基矽烷、3-甲基丙烯氧基丙基三甲氧基矽烷、3-甲基丙烯氧基丙基甲基二甲氧基矽烷、3-甲基丙烯氧基丙基三乙氧基矽烷、3-巰丙基三甲氧基矽烷、3-巰丙基甲基二甲氧基矽烷、3-巰丙基三乙氧基矽烷、N-(1,3-二甲基亞丁基)-3-胺丙基三乙氧基矽烷及胺基矽烷。該等矽烷耦合劑可以單獨使用1種，亦可以併用2種以上。Specific examples of the silane coupling agent include methyltrimethoxysilane, dimethyldimethoxysilane, trimethylmethoxysilane, methyltriethoxysilane, and methyltriethoxysilane. , Ethyltrimethoxysilane, n-propyltrimethoxysilane, diisopropyldimethoxysilane, isobutyltrimethoxysilane, diisobutyldimethoxysilane, isobutyltriethoxy Silane, n-hexyltrimethoxysilane, n-hexyltriethoxysilane, cyclohexylmethyldimethoxysilane, n-octyltriethoxysilane, n-dodecylmethoxysilane, phenyltrimethylsilane Oxysilane, diphenyldimethoxysilane, triphenylsilanol, methyltrichlorosilane, dimethyldichlorosilane, trimethylchlorosilane, n-octyldimethylchlorosilane, tetraethoxy Silane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3- (2-aminoethyl) aminopropyltrimethoxysilane, 3- (2-aminoethyl) Aminopropylmethyldimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethyl oxygen Silane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, bis [3- (triethoxysilyl) propyl] Disulfide, bis [3- (triethoxysilyl) propyl] tetrasulfide, vinyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltrisulfide Isopropoxysilane, allyltrimethoxysilane, diallyldimethylsilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldimethyl Oxysilane, 3-methacryloxypropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltriethoxy Silyl, N- (1,3-dimethylbutylene) -3-aminopropyltriethoxysilane and aminosilane. These silane coupling agents may be used individually by 1 type, and may use 2 or more types together.

無機填充劑的平均粒徑，並無特別限制，例如可以是0.01～50μm。無機填充劑的平均粒徑，例如可藉由雷射繞射散射法來測定。The average particle diameter of the inorganic filler is not particularly limited, and may be, for example, 0.01 to 50 μm. The average particle diameter of the inorganic filler can be measured, for example, by a laser diffraction scattering method.

第一樹脂層中的第一無機填充劑的含量，從降低熱收縮量的觀點來看，以第一樹脂層的總量作為基準計，可以是60質量%以上、70質量%以上或80質量%以上。從充分地確保薄膜形成性的觀點來看，第一樹脂層中的第一無機填充劑的含量，以第一樹脂層的總量作為基準計，可以是95質量%以下、90質量%以下或85質量%以下。The content of the first inorganic filler in the first resin layer may be 60% by mass or more, 70% by mass, or 80% by weight based on the total amount of the first resin layer as a reference. %the above. From the viewpoint of ensuring sufficient film formability, the content of the first inorganic filler in the first resin layer may be 95% by mass or less, 90% by mass or less based on the total amount of the first resin layer. 85 mass% or less.

第二樹脂層中的第二無機填充劑的含量，從密封成形物的尺寸穩定性的觀點來看，以第二樹脂層的總量作為基準計，可以是55質量%以上、65質量%以上或70質量%以上。從充分地確保薄膜形成性的觀點來看，第二樹脂層中的第二無機填充劑的含量，以第二樹脂層的總量作為基準計，可以是95質量%以下、90質量%以下或85質量%以下。The content of the second inorganic filler in the second resin layer may be 55% by mass or more and 65% by mass or more based on the total amount of the second resin layer from the viewpoint of the dimensional stability of the sealed molded product. Or 70% by mass or more. The content of the second inorganic filler in the second resin layer may be 95% by mass or less, 90% by mass or less based on the total amount of the second resin layer from the viewpoint of sufficiently ensuring the film formability. 85 mass% or less.

第一樹脂層和第二樹脂層，可以包含上述成分以外的成分。如此的成分，可以是一般用於密封薄膜的成分。作為其例，可列舉：抗氧化劑、難燃劑、離子捕捉劑、顏料、染料、矽烷耦合劑及彈性體。The first resin layer and the second resin layer may contain components other than the components described above. Such a component may be a component generally used for a sealing film. Examples thereof include antioxidants, flame retardants, ion trapping agents, pigments, dyes, silane coupling agents, and elastomers.

密封薄膜，可以進一步具備薄膜狀的支撐體。此時，第一樹脂層和第二樹脂層通常可依序自支撐體側來設置。支撐體，只要能夠在密封後去除，則無特別限定，例如能夠是高分子薄膜或金屬箔。The sealing film may further include a film-shaped support. At this time, the first resin layer and the second resin layer may generally be sequentially provided from the support side. The support is not particularly limited as long as it can be removed after sealing, and it can be, for example, a polymer film or a metal foil.

作為可用來作為支撐體的高分子薄膜，例如可列舉：聚乙烯薄膜、聚丙烯薄膜等的聚烯烴薄膜；聚對苯二甲酸乙二酯等的聚酯薄膜；聚氯化乙烯薄膜；聚碳酸酯薄膜；乙酸纖維素薄膜；聚醯亞胺薄膜；聚醯胺薄膜；及，四氟乙烯薄膜。作為可用來作為支撐體的金屬箔，例如可列舉銅箔及鋁箔。Examples of the polymer film that can be used as a support include polyolefin films such as polyethylene films and polypropylene films; polyester films such as polyethylene terephthalate; polyvinyl chloride films; and polycarbonate Ester film; cellulose acetate film; polyimide film; polyimide film; and tetrafluoroethylene film. Examples of the metal foil that can be used as the support include copper foil and aluminum foil.

薄膜狀的支撐體，為了易於進行剝離，可以是經脫模處理而成者。作為脫模處理的方法，例如可列舉將脫模劑塗佈在支撐體的表面上並進行乾燥的方法。作為脫模劑，例如可列舉：矽氧烷系、氟系及烯烴系的脫模劑。金屬箔，可以是利用酸等對其表面進行蝕刻而成者。The film-shaped support may be formed by a release treatment in order to facilitate peeling. As a method of a mold release process, the method of apply | coating a mold release agent on the surface of a support body, and drying is mentioned, for example. Examples of the release agent include silicone-based, fluorine-based, and olefin-based release agents. The metal foil may be obtained by etching the surface with an acid or the like.

薄膜狀的支撐體的厚度並無特別限制，從利用塗佈來形成樹脂層時的作業性和乾燥性的觀點來看，可以是2～200μm。只要支撐體的厚度是2μm以上，當為了形成樹脂層而將清漆狀樹脂組成物進行塗佈時，支撐體發生破損、或由於清漆狀樹脂組成物的重量而造成支撐體變形的疑慮較少。只要支撐體的厚度是200μm以下，即便在使用主要是自塗佈面和背面這兩面吹拂熱風來進行乾燥的乾燥機時，仍能夠有效率地實行清漆狀樹脂組成物的乾燥(去除有機溶劑)。The thickness of the film-shaped support is not particularly limited, but may be 2 to 200 μm from the viewpoints of workability and drying properties when the resin layer is formed by coating. As long as the thickness of the support is 2 μm or more, when the varnish-like resin composition is applied in order to form a resin layer, there is less concern that the support is broken or the support is deformed due to the weight of the varnish-like resin composition. As long as the thickness of the support body is 200 μm or less, even when using a dryer that blows hot air from both the coating surface and the back surface, the varnish-like resin composition can be efficiently dried (removal of organic solvents). .

密封薄膜，以保護第一樹脂層和第二樹脂層為目的，可以進一步具備保護層(例如，保護薄膜)，該保護層包覆了主要面，該主要面位於密封樹脂層(或第二樹脂層)的支撐體的相反側。藉由設置保護層，可提升密封薄膜的處理性，並且當捲取密封薄膜時，能夠避免樹脂層黏附在支撐體的背面上這樣的不良情況。The sealing film may further include a protective layer (for example, a protective film) for the purpose of protecting the first resin layer and the second resin layer. The protective layer covers the main surface, which is located on the sealing resin layer (or the second resin). Layer) on the opposite side of the support. By providing a protective layer, the handleability of the sealing film can be improved, and when the sealing film is wound up, a trouble such as the resin layer sticking to the back surface of the support can be avoided.

作為保護層，並無特別限定，例如能夠使用與例示於上述薄膜狀的支撐體相同者。The protective layer is not particularly limited, and for example, the same as the film-shaped support exemplified above can be used.

保護層的厚度，並無特別限定，從充分的保護效果及降低將密封薄膜捲繞為捲筒狀時的厚度的觀點來看，例如可以是12～100μm。The thickness of the protective layer is not particularly limited, and may be, for example, 12 to 100 μm from the viewpoint of a sufficient protective effect and a reduction in thickness when the sealing film is wound into a roll shape.

本實施形態的密封薄膜，例如能夠藉由下述方式來製造：將第一樹脂層和第二樹脂層分別形成，並將該等貼合；或在薄膜狀的支撐體上依序形成第一樹脂層和第二樹脂層。The sealing film of this embodiment can be manufactured, for example, by forming the first resin layer and the second resin layer separately and bonding them together; or sequentially forming the first on a thin film support A resin layer and a second resin layer.

第一樹脂層和第二樹脂層，能夠藉由將各自的構成成分混合，然後將所得到的樹脂組成物進行成膜來形成。亦可以藉由對欲進行成膜的樹脂組成物添加有機溶劑來調製成清漆狀樹脂組成物，並將其塗佈在支撐體上並將塗膜進行乾燥，來形成第一樹脂層和第二樹脂層。清漆狀樹脂組成物對支撐體的塗佈、及塗膜的乾燥，例如可以一邊自支撐體的捲筒供給支撐體，一邊連續地實行。可以藉由此時的乾燥條件，來調整第一樹脂層和第二樹脂層的硬化收縮率。The first resin layer and the second resin layer can be formed by mixing respective constituent components and then forming a film of the obtained resin composition. The first resin layer and the second resin layer can also be formed by adding an organic solvent to the resin composition to be formed into a film to prepare a varnish-like resin composition, coating the support composition and drying the coating film. Resin layer. The application of the varnish-like resin composition to the support and the drying of the coating film can be performed continuously while supplying the support from the roll of the support, for example. The curing shrinkage of the first resin layer and the second resin layer can be adjusted by the drying conditions at this time.

使用密封薄膜所獲得的密封成形物的翹曲，例如能夠利用製作晶圓等級的封裝體或類似晶圓等級的封裝體的評價用基板來評價。此時，亦能夠同時評價半導體晶片的埋入性。The warpage of the sealed molded product obtained by using the sealing film can be evaluated using, for example, a substrate for evaluation in which a wafer-level package or a wafer-like package is produced. In this case, the embedding property of the semiconductor wafer can also be evaluated simultaneously.

繼而，說明使用了本實施形態的密封薄膜之電子零件裝置的製造方法。以下，具體地說明半導體裝置的製造方法的一實施形態，該半導體裝置是作為電子零件的代表例並具有半導體晶片。Next, a method for manufacturing an electronic component device using the sealing film of this embodiment will be described. Hereinafter, an embodiment of a method for manufacturing a semiconductor device, which is a representative example of an electronic component and includes a semiconductor wafer, will be specifically described.

第3圖和第4圖是顯示半導體裝置的製造方法的一實施形態的概略剖面圖。本實施形態的方法，具備下述步驟：暫時固定步驟(第3圖(a))，其將暫時固定材料40貼合在基板30上，並將複數個半導體晶片20暫時固定在暫時固定材料40上；埋入步驟(第3圖(b)和(c))，其將經暫時固定的半導體晶片20與密封薄膜(密封樹脂層)10，以半導體晶片20與密封樹脂層10的密封面2S被相對向配置的方向(第二樹脂層2的密封面2S與半導體晶片20相接的方向)來重疊，並在此狀態下，在加熱下對該等進行按壓，來將半導體晶片20埋入密封樹脂層10中，該密封薄膜10具有第一樹脂層1、及被設置在該第一樹脂層1上的第二樹脂層2；及，硬化步驟(第3圖(c))，其使埋有半導體晶片20之密封薄膜10硬化。藉由硬化，可形成密封部10a，其是由第一樹脂層的硬化物1a和第二樹脂層的硬化物2a構成，並且可密封半導體晶片20。在密封部10a中，第一樹脂層的硬化物1a與第二樹脂層的硬化物2a的界線可以不明顯。3 and 4 are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. The method of this embodiment includes the following steps: a temporary fixing step (FIG. 3 (a)), which temporarily attaches the temporary fixing material 40 to the substrate 30, and temporarily fixes the plurality of semiconductor wafers 20 to the temporary fixing material 40. The embedding step (FIGS. 3 (b) and (c)), which temporarily fixes the semiconductor wafer 20 and the sealing film (sealing resin layer) 10, and the sealing surface 2S of the semiconductor wafer 20 and the sealing resin layer 10 The semiconductor wafer 20 is overlapped in the oppositely arranged direction (the direction in which the sealing surface 2S of the second resin layer 2 is in contact with the semiconductor wafer 20), and in this state, the semiconductor wafer 20 is buried by pressing it under heating. In the sealing resin layer 10, the sealing film 10 includes a first resin layer 1 and a second resin layer 2 provided on the first resin layer 1; and a curing step (FIG. 3 (c)), which uses The sealing film 10 in which the semiconductor wafer 20 is embedded is hardened. By hardening, a sealing portion 10 a can be formed, which is composed of the hardened material 1 a of the first resin layer and the hardened material 2 a of the second resin layer, and can seal the semiconductor wafer 20. In the sealing portion 10a, the boundary between the hardened material 1a of the first resin layer and the hardened material 2a of the second resin layer may not be obvious.

在本實施形態的方法中，可以使用疊層法來進行密封薄膜的按壓，亦可以使用壓模(compression mold)法。In the method of this embodiment, the lamination method may be used to press the sealing film, or a compression mold method may be used.

作為在疊層法中使用的疊層，並無特別限定，例如可列舉：輥式、氣囊(ballon)式等的疊層。該等之中，從可使埋入性更加提升這樣的觀點來看，可採用能夠真空加壓的氣囊式。The lamination used in the lamination method is not particularly limited, and examples thereof include laminations such as a roll type and a balloon type. Among these, from the viewpoint of further improving the embedding property, a bladder type capable of vacuum pressurization can be used.

用以埋入半導體晶片的溫度(例如，疊層溫度)，能夠以使密封樹脂層10(尤其是第二樹脂層2)流動並可埋入半導體晶片的方式來調整。該溫度，當具有支撐體時設為支撐體的軟化點以下。又，該溫度可以是第二樹脂層表現最低熔融黏度的溫度或其附近的溫度。用以埋入半導體晶片的壓力，可依據半導體晶片(或電子零件)的尺寸或密集度來變化，例如可以是0.2～1.5MPa或0.3～1.0MPa。按壓的時間，並無特別限定，可以是20～600秒、30～300秒或40～120秒。The temperature (for example, the lamination temperature) for embedding the semiconductor wafer can be adjusted so that the sealing resin layer 10 (especially the second resin layer 2) can flow and can be embedded in the semiconductor wafer. This temperature is set to be lower than the softening point of the support when the support is provided. The temperature may be a temperature at or near the second resin layer exhibiting the lowest melt viscosity. The pressure used to embed the semiconductor wafer may vary according to the size or density of the semiconductor wafer (or electronic component), and may be, for example, 0.2 to 1.5 MPa or 0.3 to 1.0 MPa. The pressing time is not particularly limited, and may be 20 to 600 seconds, 30 to 300 seconds, or 40 to 120 seconds.

密封樹脂層(第一樹脂層和第二樹脂層)的硬化，例如能夠在大氣下或惰性氣體下實行。硬化溫度並未特別限定，可以是80～280℃、100～240℃或120～200℃。只要硬化溫度是80℃以上，便可充分地進行密封薄膜的硬化，尤其能夠有效地抑制產生不良情況。當硬化溫度是280℃以下時，能夠抑制對其他材料產生熱傷害。硬化時間並無特別限定，可以是30～600分鐘、45～300分鐘或60～240分鐘。只要硬化時間在該等範圍內，密封樹脂層的硬化就能充分地進行，並且可獲得良好的生產效率。硬化條件，可以是溫度及/或時間不同的複數種條件的組合。The hardening of the sealing resin layer (the first resin layer and the second resin layer) can be performed, for example, in the atmosphere or under an inert gas. The curing temperature is not particularly limited, and may be 80 to 280 ° C, 100 to 240 ° C, or 120 to 200 ° C. As long as the curing temperature is 80 ° C or higher, the sealing film can be sufficiently cured, and particularly, the occurrence of defects can be effectively suppressed. When the curing temperature is 280 ° C or lower, thermal damage to other materials can be suppressed. The curing time is not particularly limited, and may be 30 to 600 minutes, 45 to 300 minutes, or 60 to 240 minutes. As long as the curing time is within these ranges, the curing of the sealing resin layer can be sufficiently performed, and good production efficiency can be obtained. The curing conditions may be a combination of a plurality of conditions with different temperatures and / or times.

將電子零件(半導體晶片20)埋入密封樹脂層10、及使密封樹脂層10硬化而形成密封部10a，可以是分別的不同步驟，亦可以是同時或連續地實行的步驟。例如，可以藉由一邊將密封樹脂層和電子零件加熱一邊按壓，而將電子零件埋入密封樹脂層中並將密封樹脂層進行硬化，來形成密封有電子零件之密封部。Embedding the electronic component (semiconductor wafer 20) in the sealing resin layer 10 and curing the sealing resin layer 10 to form the sealing portion 10a may be separate steps, or they may be performed simultaneously or continuously. For example, the sealing portion in which the electronic component is sealed can be formed by pressing the sealing resin layer and the electronic component while heating, burying the electronic component in the sealing resin layer, and curing the sealing resin layer.

在本實施形態中，經過以下的形成絕緣層、形成線路圖案、安裝焊球(ball mounting)及切割的各步驟，便能夠獲得半導體裝置。為了以高精度且有效地實行該等步驟，期望密封成形物100的翹曲較小。In this embodiment, a semiconductor device can be obtained through the following steps of forming an insulating layer, forming a line pattern, ball mounting, and dicing. In order to perform these steps with high accuracy and efficiency, it is desirable that the warpage of the seal molded article 100 is small.

首先，將暫時固定材料40自基板30剝離，來獲得密封成形物100(第4圖(a))，該密封成形物100是由半導體晶片20和密封部10a構成，該密封部10a密封有半導體晶片20。在密封成形物100的其中一主面內，露出半導體晶片20。在露出半導體晶片20側的密封成形物的主面上，設置有絕緣層50(第4圖(b))。繼而，藉由將絕緣層50進行圖案化來形成線路54，並在經圖案化的絕緣層52上安裝焊球56(第4圖(c))。First, the temporary fixing material 40 is peeled from the substrate 30 to obtain a sealed molded article 100 (FIG. 4 (a)), which is composed of a semiconductor wafer 20 and a sealed portion 10a, which is sealed with a semiconductor Wafer 20. The semiconductor wafer 20 is exposed in one of the principal surfaces of the sealed molded article 100. An insulating layer 50 is provided on the main surface of the sealed molded article on which the semiconductor wafer 20 is exposed (Fig. 4 (b)). Then, the wiring 54 is formed by patterning the insulating layer 50, and solder balls 56 are mounted on the patterned insulating layer 52 (FIG. 4 (c)).

繼而，藉由切割機60，將密封成形物進行單片化(第4圖(d)和(e))。藉此，可獲得一種半導體裝置200，其具備半導體晶片20與密封部10a，該密封部10a是密封樹脂層的硬化物，該密封樹脂層是本實施形態的密封薄膜。在半導體裝置200中，半導體晶片20在密封部10a中是以被第二樹脂層的硬化物2a包圍的方式，被埋入密封部10a內。Then, the seal-molded article is singulated by the cutter 60 (Figs. 4 (d) and (e)). Thereby, it is possible to obtain a semiconductor device 200 including the semiconductor wafer 20 and a sealing portion 10 a which is a cured product of a sealing resin layer which is a sealing film of this embodiment. In the semiconductor device 200, the semiconductor wafer 20 is buried in the sealing portion 10 a in the sealing portion 10 a so as to be surrounded by the hardened material 2 a of the second resin layer.

以上，說明了本發明中的密封薄膜、及半導體裝置及電子零件裝置的製造方法的適合的實施形態，但是本發明並未限定於上述實施形態，在不脫離其主旨的範圍內，亦可以實行適當的變更。 [實施例]As mentioned above, although suitable embodiment of the manufacturing method of the sealing film and the semiconductor device and the electronic component device in this invention was demonstrated, this invention is not limited to the said embodiment, It can also be implemented in the range which does not deviate from the meaning. Appropriate changes. [Example]

以下，藉由實施例更具體地說明本發明，但是本發明並未限定於該等實施例。Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited to these examples.

{密封薄膜的製作} 準備以下的材料來作為構成密封薄膜的成分。 [熱硬化性樹脂] A1：雙酚F型環氧樹脂(三菱化學股份有限公司製造，jER806/環氧當量：160) [硬化劑] B1：苯酚酚醛清漆樹脂(旭有機材料工業股份有限公司製造，PAPS-PN2/羥基當量：104) B2：三甲烷型苯酚樹脂(本州化學工業股份有限公司製造，TrisP-HAP/羥基當量：102) [無機填充劑] C1：二氧化矽(Admatechs股份有限公司製造，SX-E2，苯胺基矽烷處理/平均粒徑5.8μm) [硬化觸媒] D1：咪唑(四國化成工業股份有限公司製造，2PHZ-PW) [有機溶劑] E1：甲基乙基酮{Production of Sealing Film} The following materials were prepared as components constituting the sealing film. [Thermosetting resin] A1: Bisphenol F-type epoxy resin (manufactured by Mitsubishi Chemical Corporation, jER806 / epoxy equivalent: 160) [Hardener] B1: phenol novolac resin (manufactured by Asahi Organic Materials Industry Co., Ltd.) , PAPS-PN2 / hydroxy equivalent: 104) B2: Trimethane-type phenol resin (manufactured by Honshu Chemical Industry Co., Ltd., TrisP-HAP / hydroxy equivalent: 102) [inorganic filler] C1: silicon dioxide (Admatechs Co., Ltd. Manufacturing, SX-E2, aniline silane treatment / average particle size 5.8 μm) [Hardening catalyst] D1: imidazole (manufactured by Shikoku Chemical Industry Co., Ltd., 2PHZ-PW) [organic solvent] E1: methyl ethyl ketone

(實施例1) 在10L(10公升)的塑膠容器中置入497.5g的有機溶劑E1，並在其中加入3500g的無機填充劑C1，然後以攪拌葉片將無機填充劑C1分散在有機溶劑中。在此分散液中，加入300g的熱硬化性樹脂A1、460g的硬化劑B1，並攪拌分散液。以目視確認熱硬化性樹脂A1和硬化劑B1已溶解之後，加入2.5g的硬化觸媒D1，進一步將分散液攪拌1小時。將分散液以尼龍製的#200濾網(mesh，孔徑75μm)進行過濾，獲得濾液來作為清漆狀樹脂組成物。(Example 1) 497.5 g of an organic solvent E1 was placed in a 10 L (10 liter) plastic container, and 3500 g of an inorganic filler C1 was added thereto, and then the inorganic filler C 1 was dispersed in the organic solvent with a stirring blade. To this dispersion, 300 g of thermosetting resin A1 and 460 g of hardener B1 were added, and the dispersion was stirred. After visually confirming that the thermosetting resin A1 and the hardener B1 were dissolved, 2.5 g of the hardening catalyst D1 was added, and the dispersion was further stirred for 1 hour. The dispersion was filtered through a nylon # 200 mesh (mesh, pore size: 75 μm) to obtain a filtrate as a varnish-like resin composition.

使用塗佈機並利用以下的條件，將所得到的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並使支撐體和塗膜以特定的乾燥速度通過乾燥爐內，藉此將塗膜進行乾燥，來將第一樹脂層或第二樹脂層(厚度100μm)各自形成在支撐體上。塗佈和乾燥速度，意指支撐體的移動速度。乾燥條件的溫度和爐長，各自意指乾燥爐內的溫度、及支撐體在乾燥爐內的移動距離。該等條件在其他實施例和比較例中亦同。 (第一樹脂層) 塗佈頭(coating head)方式：缺角輪式(comma)。 　塗佈和乾燥速度：2m/分鐘。 乾燥條件(溫度/爐長)：110℃/3.3m、130℃/3.3m、140℃/3.3m。 (第二樹脂層) 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：3m/分鐘。 乾燥條件(溫度/爐長)：90℃/3.3m、110℃/3.3m、120℃/3.3m。Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace, thereby drying the coating film, so that each of the first resin layer or the second resin layer (thickness: 100 μm) is formed on the support. The coating and drying speed means the moving speed of the support. The temperature of the drying conditions and the furnace length respectively mean the temperature in the drying furnace and the moving distance of the support in the drying furnace. These conditions are the same in other examples and comparative examples. (First resin layer) Coating head method: comma. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 110 ° C / 3.3m, 130 ° C / 3.3m, 140 ° C / 3.3m. (Second resin layer) Coating head method: Notch wheel type. Coating and drying speed: 3m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

利用真空疊層機將第一樹脂層與第二樹脂層貼合，來獲得具有密封樹脂層之密封薄膜，該密封樹脂層是具備第一樹脂層與第二樹脂層的2層結構。The first resin layer and the second resin layer were bonded by a vacuum laminator to obtain a sealing film having a sealing resin layer. The sealing resin layer had a two-layer structure including a first resin layer and a second resin layer.

(實施例2) 除了將硬化觸媒D1的量自2.5g變更為7.5g以外，藉由與實施例1相同的方法來製作清漆狀樹脂組成物。使用塗佈機並利用以下的條件，將所得到的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並使支撐體和塗膜以特定的乾燥速度通過乾燥爐內，藉此將塗膜進行乾燥，來將第一樹脂層(厚度100μm)形成在支撐體上。 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：2m/分鐘。 乾燥條件(溫度/爐長)：110℃/3.3m、130℃/3.3m、140℃/3.3m。(Example 2) A varnish-like resin composition was produced in the same manner as in Example 1, except that the amount of the curing catalyst D1 was changed from 2.5 g to 7.5 g. Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace to dry the coating film, thereby forming a first resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 110 ° C / 3.3m, 130 ° C / 3.3m, 140 ° C / 3.3m.

藉由與實施例1相同的方法來製作清漆狀樹脂組成物。使用塗佈機並利用以下的條件，將所得到的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並使支撐體和塗膜以特定的乾燥速度通過乾燥爐內，藉此將塗膜進行乾燥，來將第二樹脂層(厚度100μm)形成在支撐體上。 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：2m/分鐘。 乾燥條件(溫度/爐長)：90℃/3.3m、110℃/3.3m、120℃/3.3m。A varnish-like resin composition was produced by the same method as in Example 1. Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace, thereby drying the coating film to form a second resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

利用真空疊層機將第一樹脂層與第二樹脂層貼合，來獲得具有密封樹脂層之密封薄膜，該密封樹脂層是具備第一樹脂層與第二樹脂層的2層結構。The first resin layer and the second resin layer were bonded by a vacuum laminator to obtain a sealing film having a sealing resin layer. The sealing resin layer had a two-layer structure including a first resin layer and a second resin layer.

(實施例3) 除了將硬化觸媒D1的量自2.5g變更為7.5g以外，藉由與實施例1相同的方法來製作清漆狀樹脂組成物。使用塗佈機並利用以下的條件，將所得到的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並使支撐體和塗膜以特定的乾燥速度通過乾燥爐內，藉此將塗膜進行乾燥，來將第一樹脂層(厚度100μm)形成在支撐體上。 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：3m/分鐘。 乾燥條件(溫度/爐長)：110℃/3.3m、130℃/3.3m、140℃/3.3m。(Example 3) A varnish-like resin composition was produced in the same manner as in Example 1 except that the amount of the curing catalyst D1 was changed from 2.5 g to 7.5 g. Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace to dry the coating film, thereby forming a first resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 3m / min. Drying conditions (temperature / furnace length): 110 ° C / 3.3m, 130 ° C / 3.3m, 140 ° C / 3.3m.

藉由與實施例1相同的方法來製作清漆狀樹脂組成物。使用塗佈機並利用以下的條件，將所得到的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並使支撐體和塗膜以特定的乾燥速度通過乾燥爐內，藉此將塗膜進行乾燥，來將第二樹脂層(厚度100μm)形成在支撐體上。 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：2m/分鐘。 乾燥條件(溫度/爐長)：90℃/3.3m、110℃/3.3m、120℃/3.3m。A varnish-like resin composition was produced by the same method as in Example 1. Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace, thereby drying the coating film to form a second resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

利用真空疊層機將第一樹脂層與第二樹脂層貼合，來獲得具有密封樹脂層之密封薄膜，該密封樹脂層是具備第一樹脂層與第二樹脂層的2層結構。The first resin layer and the second resin layer were bonded by a vacuum laminator to obtain a sealing film having a sealing resin layer. The sealing resin layer had a two-layer structure including a first resin layer and a second resin layer.

(實施例4) 藉由與實施例1相同的方法來製作清漆狀樹脂組成物。使用塗佈機並利用以下的條件，將所得到的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並將塗膜進行乾燥，來將第一樹脂層(厚度100μm)形成在支撐體上。 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：2m/分鐘。 乾燥條件(溫度/爐長)：90℃/3.3m、110℃/3.3m、120℃/3.3m。(Example 4) A varnish-like resin composition was produced by the same method as in Example 1. Using a coater, the obtained varnish-like resin composition was applied to a film-shaped support (38 μm thick polyethylene terephthalate) under the following conditions, and the coating film was dried to obtain A first resin layer (thickness: 100 μm) was formed on the support. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

藉由與實施例1相同的方法來製作清漆狀樹脂組成物。使用塗佈機並利用以下的條件，將所得到的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並使支撐體和塗膜以特定的乾燥速度通過乾燥爐內，藉此將塗膜進行乾燥，來將第二樹脂層(厚度100μm)形成在支撐體上。A varnish-like resin composition was produced by the same method as in Example 1. Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace, thereby drying the coating film to form a second resin layer (thickness: 100 μm) on the support.

塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：2.5m/分鐘。 乾燥條件(溫度/爐長)：90℃/3.3m、110℃/3.3m、120℃/3.3m。Coating head method: corner wheel type. Coating and drying speed: 2.5m / minute. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

(實施例5) 藉由與實施例1相同的方法來製作清漆狀樹脂組成物。使用塗佈機並利用以下的條件，將所得到的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並使支撐體和塗膜以特定的乾燥速度通過乾燥爐內，藉此將塗膜進行乾燥，來將第一樹脂層(厚度100μm)形成在支撐體上。 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：2m/分鐘。 乾燥條件(溫度/爐長)：90℃/3.3m、110℃/3.3m、120℃/3.3m。(Example 5) A varnish-like resin composition was produced by the same method as in Example 1. Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace to dry the coating film, thereby forming a first resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

在10L的塑膠容器中置入497.5g的有機溶劑E1，並在其中加入3500g的無機填充劑C1，然後以攪拌葉片將無機填充劑C1分散在有機溶劑中。在此分散液中，加入296g的熱硬化性樹脂A1、464g的硬化劑B2，並攪拌分散液。以目視確認熱硬化性樹脂A1和硬化劑B2已溶解之後，加入2.5g的硬化觸媒D1，進一步將分散液攪拌1小時。將分散液以尼龍製的#200濾網(mesh，孔徑75μm)進行過濾，獲得濾液來作為清漆狀樹脂組成物。In a 10L plastic container, 497.5 g of an organic solvent E1 was placed, and 3500 g of an inorganic filler C1 was added thereto, and then the inorganic filler C1 was dispersed in the organic solvent with a stirring blade. To this dispersion, 296 g of thermosetting resin A1 and 464 g of hardener B2 were added, and the dispersion was stirred. After visually confirming that the thermosetting resin A1 and the hardener B2 were dissolved, 2.5 g of the hardening catalyst D1 was added, and the dispersion was further stirred for 1 hour. The dispersion was filtered through a nylon # 200 mesh (mesh, pore size: 75 μm) to obtain a filtrate as a varnish-like resin composition.

使用塗佈機並利用以下的條件，將所得到的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並使支撐體和塗膜以特定的乾燥速度通過乾燥爐內，藉此將塗膜進行乾燥，來將第二樹脂層(厚度100μm)形成在支撐體上。 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：3m/分鐘。 乾燥條件(溫度/爐長)：90℃/3.3m、110℃/3.3m、120℃/3.3m。Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace, thereby drying the coating film to form a second resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 3m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

(實施例6) 在10L的塑膠容器中置入497.5g的有機溶劑E1，並在其中加入3350g的無機填充劑C1，然後以攪拌葉片將無機填充劑C1分散在有機溶劑中。在此分散液中，加入360g的熱硬化性樹脂A1、550g的硬化劑B1，並攪拌分散液。以目視確認熱硬化性樹脂A1和硬化劑B1已溶解之後，加入3.0g的硬化觸媒D1，進一步將分散液攪拌1小時。將分散液以尼龍製的#200濾網(mesh，孔徑75μm)進行過濾，獲得濾液來作為清漆狀樹脂組成物。(Example 6) In a 10L plastic container, 497.5 g of an organic solvent E1 was placed, and 3350 g of an inorganic filler C1 was added thereto, and then the inorganic filler C1 was dispersed in the organic solvent with a stirring blade. To this dispersion, 360 g of thermosetting resin A1 and 550 g of hardener B1 were added, and the dispersion was stirred. After visually confirming that the thermosetting resin A1 and the curing agent B1 were dissolved, 3.0 g of the curing catalyst D1 was added, and the dispersion was further stirred for 1 hour. The dispersion was filtered through a nylon # 200 mesh (mesh, pore size: 75 μm) to obtain a filtrate as a varnish-like resin composition.

使用塗佈機並利用以下的條件，將所得到的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並使支撐體和塗膜以特定的乾燥速度通過乾燥爐內，藉此將塗膜進行乾燥，來將第一樹脂層(厚度100μm)形成在支撐體上。 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：3m/分鐘。 乾燥條件(溫度/爐長)：90℃/3.3m、110℃/3.3m、120℃/3.3m。Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace to dry the coating film, thereby forming a first resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 3m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

在10L的塑膠容器中置入497.5g的有機溶劑E1，並在其中加入3200g的無機填充劑C1，然後以攪拌葉片將無機填充劑C1分散在有機溶劑中。在此分散液中，加入419g的熱硬化性樹脂A1、641g的硬化劑B1，並攪拌分散液。以目視確認熱硬化性樹脂A1和硬化劑B1已溶解之後，加入3.5g的硬化觸媒D1，進一步將分散液攪拌1小時。將分散液以尼龍製的#200濾網(mesh，孔徑75μm)進行過濾，獲得濾液來作為清漆狀樹脂組成物。In a 10L plastic container, 497.5 g of an organic solvent E1 was placed, and 3200 g of an inorganic filler C1 was added thereto, and then the inorganic filler C1 was dispersed in the organic solvent with a stirring blade. To this dispersion, 419 g of thermosetting resin A1 and 641 g of hardener B1 were added, and the dispersion was stirred. After visually confirming that the thermosetting resin A1 and the hardener B1 were dissolved, 3.5 g of the hardening catalyst D1 was added, and the dispersion was further stirred for 1 hour. The dispersion was filtered through a nylon # 200 mesh (mesh, pore size: 75 μm) to obtain a filtrate as a varnish-like resin composition.

使用塗佈機並利用以下的條件，將所得到的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並使支撐體和塗膜以特定的乾燥速度通過乾燥爐內，藉此將塗膜進行乾燥，來將第二樹脂層(厚度100μm)形成在支撐體上。 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：3m/分鐘。 乾燥條件(溫度/爐長)：90℃/3.3m、110℃/3.3m、120℃/3.3m。Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace, thereby drying the coating film to form a second resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 3m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

(比較例1) 使用塗佈機並利用以下的條件，將與實施例1相同的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並使支撐體和塗膜以特定的乾燥速度通過乾燥爐內，藉此將塗膜進行乾燥，來將第一樹脂層和第二樹脂層(厚度100μm)各自形成在支撐體上。 (第一樹脂層) 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：3m/分鐘。 乾燥條件(溫度/爐長)：90℃/3.3m、110℃/3.3m、120℃/3.3m。 (第二樹脂層) 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：2m/分鐘。 乾燥條件(溫度/爐長)：110℃/3.3m、130℃/3.3m、140℃/3.3m。(Comparative Example 1) Using a coater and using the following conditions, the same varnish-like resin composition as in Example 1 was applied to a film-shaped support (38 μm thick polyethylene terephthalate). Each of the first resin layer and the second resin layer (thickness: 100 μm) was formed on the support by passing the support and the coating film through a drying furnace at a specific drying rate, thereby drying the coating film. (First resin layer) Coating head method: corner wheel type. Coating and drying speed: 3m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m. (Second resin layer) Coating head method: Notch wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 110 ° C / 3.3m, 130 ° C / 3.3m, 140 ° C / 3.3m.

利用真空疊層機將第一樹脂層與第二樹脂層貼合，來獲得具有密封樹脂層之密封薄膜，該密封樹脂層是具備第一樹脂層與第二樹脂層的2層結構。The first resin layer and the second resin layer were bonded by a vacuum laminator to obtain a sealing film having a sealing resin layer. The sealing resin layer had a two-layer structure including a first resin layer and a second resin layer.

(比較例2) 使用塗佈機並利用以下的條件，將與實施例1相同的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並使支撐體和塗膜以特定的乾燥速度通過乾燥爐內，藉此將塗膜進行乾燥，來將第一樹脂層 (厚度100μm)形成在支撐體上。 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：2m/分鐘。 乾燥條件(溫度/爐長)：90℃/3.3m、110℃/3.3m、120℃/3.3m。(Comparative Example 2) Using a coater and using the following conditions, the same varnish-like resin composition as in Example 1 was applied to a film-shaped support (38 μm thick polyethylene terephthalate). The support and the coating film were passed through a drying furnace at a specific drying rate, thereby drying the coating film to form a first resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

除了將硬化觸媒D1的量自2.5g變更為7.5g以外，藉由與實施例1相同的方法來製作清漆狀樹脂組成物。使用塗佈機並利用以下的條件，將所得到的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並使支撐體和塗膜以特定的乾燥速度通過乾燥爐內，藉此將塗膜進行乾燥，來將第二樹脂層(厚度100μm)形成在支撐體上。 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：2m/分鐘。 乾燥條件(溫度/爐長)：110℃/3.3m、130℃/3.3m、140℃/3.3m。A varnish-like resin composition was produced in the same manner as in Example 1 except that the amount of the curing catalyst D1 was changed from 2.5 g to 7.5 g. Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace, thereby drying the coating film to form a second resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 110 ° C / 3.3m, 130 ° C / 3.3m, 140 ° C / 3.3m.

利用真空疊層機將第一樹脂層與第二樹脂層貼合，來獲得具有密封樹脂層之密封薄膜，該密封樹脂層是具備第一樹脂層與第二樹脂層的2層結構。The first resin layer and the second resin layer were bonded by a vacuum laminator to obtain a sealing film having a sealing resin layer. The sealing resin layer had a two-layer structure including a first resin layer and a second resin layer.

(比較例3) 藉由與實施例1相同的方法來製作清漆狀樹脂組成物。使用塗佈機並利用以下的條件，將所得到的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並使支撐體和塗膜以特定的乾燥速度通過乾燥爐內，藉此將塗膜進行乾燥，來將第一樹脂層(厚度100μm)形成在支撐體上。 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：2m/分鐘。 乾燥條件(溫度/爐長)：90℃/3.3m、110℃/3.3m、120℃/3.3m。(Comparative Example 3) A varnish-like resin composition was produced by the same method as in Example 1. Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace to dry the coating film, thereby forming a first resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

使用塗佈機並利用以下的條件，將與實施例1相同的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並使支撐體和塗膜以特定的乾燥速度通過乾燥爐內，藉此將塗膜進行乾燥，來將第二樹脂層(厚度100μm)形成在支撐體上。 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：1.5m/分鐘。 乾燥條件(溫度/爐長)：90℃/3.3m、110℃/3.3m、120℃/3.3m。Using a coater and using the following conditions, the same varnish-like resin composition as in Example 1 was applied to a film-shaped support (38 μm thick polyethylene terephthalate), and the support and The coating film was passed through a drying furnace at a specific drying rate, and the coating film was dried to form a second resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 1.5m / minute. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

利用真空疊層機將第一樹脂層與第二樹脂層貼合，來獲得具有密封樹脂層之密封薄膜，該密封樹脂層是具備第一樹脂層與第二樹脂層的2層結構。The first resin layer and the second resin layer were bonded by a vacuum laminator to obtain a sealing film having a sealing resin layer. The sealing resin layer had a two-layer structure including a first resin layer and a second resin layer.

(比較例4) 使用塗佈機並利用以下的條件，將與實施例1相同的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，使支撐體和塗膜以特定的乾燥速度通過乾燥爐內，藉此將塗膜進行乾燥，來將樹脂層 (厚度100μm)形成在支撐體上。 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：2m/分鐘。 乾燥條件(溫度/爐長)：90℃/3.3m、110℃/3.3m、120℃/3.3m。(Comparative Example 4) Using a coater and applying the following conditions, the same varnish-like resin composition as in Example 1 was applied to a film-shaped support (38 μm thick polyethylene terephthalate). A resin layer (thickness: 100 μm) was formed on the support by passing the support and the coating film through a drying furnace at a specific drying rate, thereby drying the coating film. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

利用真空疊層機將所得到的2片樹脂層貼合，來獲得具有密封樹脂層之密封薄膜，該密封樹脂層是厚度為200μm的1層結構。The obtained two resin layers were bonded together by a vacuum laminator to obtain a sealing film having a sealing resin layer having a single-layer structure having a thickness of 200 μm.

(比較例5) 在10L的塑膠容器中置入497.5g的有機溶劑E1，並在其中加入3500g的無機填充劑C1，然後以攪拌葉片將無機填充劑C1分散在有機溶劑中。在此分散液中，加入296g的熱硬化性樹脂A1、464g的硬化劑B2，並攪拌分散液。以目視確認熱硬化性樹脂A1和硬化劑B2已溶解之後，加入2.5g的硬化觸媒D1，進一步將分散液攪拌1小時。將分散液以尼龍製的#200濾網(mesh，孔徑75μm)進行過濾，獲得濾液來作為清漆狀樹脂組成物。(Comparative Example 5) In a 10-liter plastic container, 497.5 g of an organic solvent E1 was placed, and 3500 g of an inorganic filler C1 was added thereto, and then the inorganic filler C1 was dispersed in the organic solvent with a stirring blade. To this dispersion, 296 g of thermosetting resin A1 and 464 g of hardener B2 were added, and the dispersion was stirred. After visually confirming that the thermosetting resin A1 and the hardener B2 were dissolved, 2.5 g of the hardening catalyst D1 was added, and the dispersion was further stirred for 1 hour. The dispersion was filtered through a nylon # 200 mesh (mesh, pore size: 75 μm) to obtain a filtrate as a varnish-like resin composition.

使用塗佈機並利用以下的條件，將所得到的清漆狀樹脂組成物塗佈在薄膜狀的支撐體(38μm厚的聚對苯二甲酸乙二酯)上，並將塗膜進行乾燥，來將樹脂層 (厚度100μm)形成在支撐體上。 塗佈頭方式：缺角輪式。 　塗佈和乾燥速度：3m/分鐘。 乾燥條件(溫度/爐長)：90℃/3.3m、110℃/3.3m、120℃/3.3m。Using a coater, the obtained varnish-like resin composition was applied to a film-shaped support (38 μm thick polyethylene terephthalate) under the following conditions, and the coating film was dried to obtain A resin layer (thickness: 100 μm) was formed on the support. Coating head method: corner wheel type. Coating and drying speed: 3m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

利用真空疊層機將所得到的2片樹脂層貼合，來獲得具有密封樹脂層之密封薄膜，該密封樹脂層是厚度為200μm的1層結構。The obtained two resin layers were bonded together by a vacuum laminator to obtain a sealing film having a sealing resin layer having a single-layer structure having a thickness of 200 μm.

將各實施例中的樹脂組成物的調配量、厚度、乾燥速度、乾燥條件及硬化收縮率，統整並表示於表1。Table 1 shows the blending amount, thickness, drying speed, drying conditions, and curing shrinkage of the resin composition in each example.

[表1] [Table 1]

[評價試驗] (硬化收縮率) 將由上述各實施例和比較例所製成的密封薄膜的支撐體剝離，來獲得用以測定硬化收縮率的評價樣品。硬化收縮率(%)是使用PVT試驗機(東洋精機製作所股份有限公司製造)並利用下述條件所測得。將結果表示於表1和表2。 評價樣品質量：8g。 加熱條件：自40℃升溫至140℃，並在140℃保持2小時之後，冷卻至室溫(23℃)。 壓力：3MPa。 筒徑(cylinder diameter)：11.284mm(面積：1.0cm2 )。[Evaluation Test] (Hardening Shrinkage Ratio) The support of the sealing film made of each of the above Examples and Comparative Examples was peeled to obtain an evaluation sample for measuring the hardening shrinkage ratio. The hardening shrinkage (%) was measured using a PVT tester (manufactured by Toyo Seiki Seisakusho Co., Ltd.) under the following conditions. The results are shown in Tables 1 and 2. Evaluation sample quality: 8g. Heating conditions: The temperature was raised from 40 ° C to 140 ° C, and it was held at 140 ° C for 2 hours, and then cooled to room temperature (23 ° C). Pressure: 3MPa. Cylinder diameter: 11.284 mm (area: 1.0 cm 2 ).

(翹曲和晶片埋入性) 準備直徑220mm、厚度1.5mm的SUS(不鏽鋼)板來作為支撐體。使用疊層機，將暫時固定用薄膜貼合在SUS板的其中一側上。使用切割刀將超出SUS板的暫時固定用薄膜切除。(Warpage and wafer embedding property) A SUS (stainless steel) plate having a diameter of 220 mm and a thickness of 1.5 mm was prepared as a support. Using a laminator, the film for temporary fixing was bonded to one side of the SUS board. Using a cutter, remove the film for temporary fixation beyond the SUS plate.

繼而，在上述暫時固定用薄膜上將7.3mm×7.3mm且厚度150μm的矽晶片配置成格子狀，來獲得評價用基板。矽晶片的安裝數是193個，矽晶片的間隔(pitch)在縱方向和橫方向同樣地設為9.6mm。配置矽晶片時使用置晶機(die sorter，佳能機械股份有限公司製造的CAP3500(商品型號))，配置時的負載，設為每一矽晶片為1kgf。Then, a silicon wafer having a thickness of 7.3 mm × 7.3 mm and a thickness of 150 μm was arranged in a grid shape on the temporary fixing film to obtain a substrate for evaluation. The number of mounted silicon wafers was 193, and the pitch of the silicon wafers was set to 9.6 mm in both the vertical and horizontal directions. A silicon sorter (a CAP3500 (commercial model) manufactured by Canon Machinery Co., Ltd.) was used when arranging silicon wafers, and the load during the configuration was set to 1 kgf per silicon wafer.

將由實施例和比較例製成的各密封薄膜的密封樹脂層，以第二樹脂層朝向矽晶片側的方向來重疊並貼合在所製成的評價用基板上，並在此狀態下，使用真空疊層機一邊加熱一邊將密封樹脂層和矽晶片進行按壓，藉此將矽晶片埋入密封樹脂層中並將密封樹脂層進行熱硬化，來形成密封有矽晶片之密封部。自所得到的密封成形物剝除暫時固定用薄膜，並將矽晶片側的面朝下，利用尺來測定密封成形物的翹曲的方向、及自底面至翹曲最大的部分為止的翹曲量。翹曲方向為「凸」，意指密封部側成為凸起方向地產生翹曲。The sealing resin layers of the respective sealing films made in the examples and comparative examples were superimposed on the prepared evaluation substrate with the second resin layer facing the silicon wafer side, and were used in this state. The vacuum laminator presses the sealing resin layer and the silicon wafer while heating, thereby burying the silicon wafer in the sealing resin layer and thermally curing the sealing resin layer to form a sealing portion in which the silicon wafer is sealed. The film for temporary fixation was peeled from the obtained sealed molded article, and the silicon wafer side face down, and the direction of warpage of the sealed molded article and the warpage from the bottom surface to the portion with the largest warpage were measured with a ruler. the amount. The warping direction is "convex", which means that the seal portion side is warped in a convex direction.

以目視確認自暫時固定用薄膜剝除後的密封成形物的矽晶片側的面，並基於樹脂是否被填充在矽晶片之間，來判斷晶片埋入性。將沒有未被填充之處的情況判定為「良好」。針對比較例1，因為有埋入性的問題，所以並未實行翹曲的評價。The surface of the silicon wafer side of the sealing molded article after peeling off the film for temporary fixing was visually confirmed, and the wafer embedding property was judged based on whether the resin was filled between the silicon wafers. A case where there is no unfilled portion is judged as "good". In Comparative Example 1, since there was a problem of embedding property, evaluation of warpage was not performed.

[表2] [Table 2]

[表3] [table 3]

在表2和表3中顯示評價結果。根據實施例的密封薄膜，便能夠以良好的埋入性來密封矽晶片，並且可充分地抑制密封成形物的翹曲，該實施例是第二樹脂層的硬化收縮率大於第一樹脂層的硬化收縮率者。The evaluation results are shown in Tables 2 and 3. According to the sealing film of the embodiment, the silicon wafer can be sealed with a good embedding property, and the warpage of the sealed molding can be sufficiently suppressed. In this embodiment, the curing shrinkage of the second resin layer is larger than that of the first resin layer. Hardening shrinkage.

1‧‧‧第一樹脂層1‧‧‧first resin layer

1a‧‧‧第一樹脂層的硬化物1a‧‧‧hardened product of the first resin layer

2‧‧‧第二樹脂層2‧‧‧second resin layer

2a‧‧‧第二樹脂層的硬化物2a‧‧‧hardened product of second resin layer

3‧‧‧樹脂密封材料3‧‧‧resin sealing material

3a‧‧‧樹脂密封材料的硬化物3a‧‧‧hardened material of resin sealing material

10‧‧‧密封薄膜(密封樹脂層)10‧‧‧sealing film (sealing resin layer)

10a‧‧‧密封樹脂層的硬化物10a‧‧‧hardened product of sealing resin layer

20‧‧‧半導體晶片20‧‧‧Semiconductor wafer

30‧‧‧基板30‧‧‧ substrate

40‧‧‧暫時固定材料40‧‧‧Temporary fixing material

50‧‧‧絕緣層50‧‧‧ Insulation

52‧‧‧經圖案化的絕緣層52‧‧‧ patterned insulation

54‧‧‧線路54‧‧‧ route

56‧‧‧焊球56‧‧‧Solder Ball

60‧‧‧切割機60‧‧‧Cutting Machine

100‧‧‧密封成形物100‧‧‧Sealed molding

200‧‧‧半導體裝置200‧‧‧ semiconductor device

2S‧‧‧密封面2S‧‧‧Sealing surface

第1圖是顯示一實施形態的密封薄膜的概略剖面圖。 第2圖(a)是利用先前的單層密封薄膜來密封半導體晶片後的密封成形物的概略剖面圖；第2圖(b)是利用硬化收縮率不同的一實施形態的密封薄膜來密封半導體晶片後的密封成形物的概略剖面圖。 第3圖是用以說明半導體裝置的製造方法的一實施形態的概略剖面圖。 第4圖是用以說明半導體裝置的製造方法的一實施形態的概略剖面圖。FIG. 1 is a schematic cross-sectional view showing a sealing film according to an embodiment. Fig. 2 (a) is a schematic cross-sectional view of a sealed molded article after a semiconductor wafer is sealed with a conventional single-layer sealing film; Fig. 2 (b) is a semiconductor film sealed with a sealing film of an embodiment having different curing shrinkage A schematic cross-sectional view of the sealed molded product after the wafer. FIG. 3 is a schematic cross-sectional view for explaining an embodiment of a method of manufacturing a semiconductor device. FIG. 4 is a schematic cross-sectional view illustrating an embodiment of a method for manufacturing a semiconductor device.

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Claims (8)

一種密封薄膜，其用以密封電子零件， 該密封薄膜具備密封樹脂層，該密封樹脂層具有第一樹脂層及第二樹脂層，該第一樹脂層含有第一熱硬化性樹脂和第一無機填充劑，該第二樹脂層含有第二熱硬化性樹脂和第二無機填充劑； 其中，前述第二樹脂層具有密封面，該密封面在將前述電子零件密封時朝向前述電子零件側，並且前述第二樹脂層和前述第一樹脂層自前述密封面側起依序被積層； 前述第二樹脂層的硬化收縮率大於前述第一樹脂層的硬化收縮率。A sealing film for sealing electronic parts. The sealing film includes a sealing resin layer including a first resin layer and a second resin layer. The first resin layer contains a first thermosetting resin and a first inorganic resin. A filler, the second resin layer containing a second thermosetting resin and a second inorganic filler; wherein the second resin layer has a sealing surface that faces the electronic component side when the electronic component is sealed, and The second resin layer and the first resin layer are sequentially laminated from the sealing surface side; the curing shrinkage rate of the second resin layer is greater than the curing shrinkage rate of the first resin layer. 如請求項1所述之密封薄膜，其中，前述第二樹脂層的硬化收縮率相對於前述第一樹脂層的硬化收縮率的比，超過1且未滿10。The sealing film according to claim 1, wherein the ratio of the curing shrinkage ratio of the second resin layer to the curing shrinkage ratio of the first resin layer exceeds 1 and is less than 10. 如請求項1或2所述之密封薄膜，其中，前述第一熱硬化性樹脂和前述第二熱硬化性樹脂，是相同的環氧樹脂或互為不同的環氧樹脂。The sealing film according to claim 1 or 2, wherein the first thermosetting resin and the second thermosetting resin are the same epoxy resin or mutually different epoxy resins. 一種電子零件裝置的製造方法，其具備： 埋入電子零件的步驟，其在加熱下，將請求項1～3中任一項所述之密封薄膜的密封樹脂層、及與該密封樹脂層的密封面相對向配置的電子零件進行按壓，藉此將前述電子零件埋入前述密封樹脂層中；及， 形成密封部的步驟，其使前述密封樹脂層硬化，來形成前述密封樹脂層的硬化物也就是密封有前述電子零件之密封部。An electronic component device manufacturing method comprising: a step of embedding an electronic component, under heating, applying a sealing resin layer of the sealing film according to any one of claims 1 to 3, and a sealing resin layer with the sealing resin layer; The sealing surface is pressed against the electronic component disposed to embed the electronic component in the sealing resin layer; and a step of forming a sealing portion that hardens the sealing resin layer to form a hardened material of the sealing resin layer. That is, the sealing portion in which the aforementioned electronic component is sealed. 如請求項4所述之電子零件裝置的製造方法，其中，前述電子零件包含半導體晶片。The method for manufacturing an electronic component device according to claim 4, wherein the electronic component includes a semiconductor wafer. 一種電子零件裝置，其具備電子零件、及密封有前述電子零件之密封部，其中， 前述密封部是請求項1～3中任一項所述之密封薄膜的密封樹脂層的硬化物。An electronic component device comprising an electronic component and a sealing portion that seals the electronic component, wherein the sealing portion is a cured product of a sealing resin layer of the sealing film according to any one of claims 1 to 3. 如請求項6所述之電子零件裝置，其中，前述電子零件包含半導體晶片。The electronic component device according to claim 6, wherein the electronic component includes a semiconductor wafer. 如請求項6所述之電子零件裝置，其中，前述電子零件在前述密封部中被前述第二樹脂層的硬化物包圍。The electronic component device according to claim 6, wherein the electronic component is surrounded by the hardened material of the second resin layer in the sealing portion.
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