TW201841201A - Reaction cavity used for wafer processing - Google Patents

Reaction cavity used for wafer processing Download PDF

Info

Publication number
TW201841201A
TW201841201A TW106137260A TW106137260A TW201841201A TW 201841201 A TW201841201 A TW 201841201A TW 106137260 A TW106137260 A TW 106137260A TW 106137260 A TW106137260 A TW 106137260A TW 201841201 A TW201841201 A TW 201841201A
Authority
TW
Taiwan
Prior art keywords
base
cooling liquid
reaction chamber
temperature
heat exchange
Prior art date
Application number
TW106137260A
Other languages
Chinese (zh)
Other versions
TWI667685B (en
Inventor
張輝
杜冰潔
Original Assignee
大陸商中微半導體設備（上海）有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大陸商中微半導體設備（上海）有限公司 filed Critical 大陸商中微半導體設備（上海）有限公司
Publication of TW201841201A publication Critical patent/TW201841201A/en
Application granted granted Critical
Publication of TWI667685B publication Critical patent/TWI667685B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature

Abstract

The invention provides a reaction cavity used for wafer processing. A base used for supporting a to-be-processed wafer is included in the reaction cavity; at least one heat exchange pipeline used forallowing a cooling liquid to flow is formed in the base; each heat exchange pipeline comprises an inlet end and an outlet end; a base temperature control system comprises a cooling liquid container; the cooling liquid container comprises an output end; the output end is connected to the inlet end of the heat exchange pipeline through a first cooling liquid conveying pipeline; the outlet end of the heat exchange pipeline is connected to the backflow end of the cooling liquid container through a second cooling liquid conveying pipeline; a thermal storage mixed liquid at the preset temperature is stored in the cooling liquid container; the thermal storage mixed liquid comprises a cooling liquid and a phase change material micro capsule suspended in the cooling liquid; the micro capsule has the diameter of 1-500[mu]m; and the thermal storage mixed liquid flows through the heat exchange pipeline to enable the base to have uniform temperature.

Description

一種用於晶圓處理的反應腔Reaction chamber for wafer processing

本發明涉及半導體加工技術領域，具體涉及一種晶圓處理反應腔，能夠使得晶圓安裝基座具有均一的溫度。The present invention relates to the technical field of semiconductor processing, and in particular to a wafer processing reaction chamber, which can make a wafer mounting base have a uniform temperature.

等離子處理裝置被廣泛應用於半導體晶圓加工處理流程中，如圖1所示為典型的等離子處理裝置結構圖。等離子處理裝置包括可以抽真空的反應腔100，反應腔包括側壁以及底壁，整個反應腔100都由金屬製成且接地，實現對射頻電磁場的遮罩與氣密。反應腔內底部包括基座22用於支撐待處理的晶圓，基座同時作為下電極連接到下方的至少一個射頻電源。射頻電源也可以設置多個，比如第一射頻電源33透過匹配器1連接到基座22，第二射頻電源32透過匹配器2連接到基座22。射頻電源輸出的射頻頻率可以是2MHz或13MHz或者60MHz，可以根據等離子濃度和離子濃度的需要調節射頻電源輸出到下電極的功率。基座22上方還包括一個靜電夾盤21，透過靜電夾盤21固定待處理晶圓20。在電容耦合等離子(CCP)反應腔中與基座相對的反應腔上方包括上電極11，上電極11中還集成了反應氣體進氣裝置連接到氣源110，用於均勻輸入反應氣體到下方的晶圓。在電感耦合等離子（ICP）反應腔頂部不需要設置上電極，代之以一個電感線圈設置在反應腔頂蓋上方，一個射頻電源連接到該電感線圈，線圈產生的電磁場穿過反應腔頂蓋進入反應腔100內形成等離子體。基座22上方還設置有邊緣環10，該邊緣環10圍繞靜電夾盤和待處理晶圓20，實現對晶圓邊緣區域電場和氣流和溫度的調節。Plasma processing devices are widely used in semiconductor wafer processing processes, as shown in Figure 1 for a typical plasma processing device structure. The plasma processing device includes a reaction chamber 100 that can be evacuated. The reaction chamber includes a side wall and a bottom wall. The entire reaction chamber 100 is made of metal and grounded to realize shielding and airtightness to radio frequency electromagnetic fields. The bottom of the reaction chamber includes a pedestal 22 for supporting a wafer to be processed, and the pedestal is simultaneously connected to at least one radio frequency power source as a lower electrode at the same time. A plurality of radio frequency power sources may also be provided. For example, the first radio frequency power source 33 is connected to the base 22 through the matcher 1, and the second radio frequency power source 32 is connected to the base 22 through the matcher 2. The RF frequency output by the RF power source can be 2 MHz, 13 MHz, or 60 MHz. The power output by the RF power source to the lower electrode can be adjusted according to the plasma concentration and the needs of the ion concentration. An electrostatic chuck 21 is further provided above the susceptor 22, and the wafer 20 to be processed is fixed through the electrostatic chuck 21. An upper electrode 11 is included above the reaction chamber opposite to the base in the capacitively coupled plasma (CCP) reaction chamber. The upper electrode 11 also integrates a reaction gas inlet device connected to the gas source 110 for uniformly inputting the reaction gas to the lower one. Wafer. The upper electrode does not need to be set on the top of the inductively coupled plasma (ICP) reaction chamber. Instead, an inductive coil is arranged above the top of the reaction chamber. An RF power source is connected to the inductive coil. The electromagnetic field generated by the coil enters through the top of the reaction chamber. A plasma is formed in the reaction chamber 100. An edge ring 10 is also provided above the pedestal 22, and the edge ring 10 surrounds the electrostatic chuck and the wafer 20 to be processed, so as to adjust the electric field, air flow and temperature of the wafer edge area.

圖2為現有技術中基座的溫度控制系統示意圖，圖中基座22設置有熱交換管道220，管道包括入口端220b和出口端220a。基座溫度控制系統還包括冷卻液容器31和輸入閥門V1，具有設定溫度的冷卻液30透過閥門V1被送入入口端220b，隨後從出口端220a經過閥門V3回流到冷卻液容器31中，透過控制冷卻液容器31內冷卻液30的溫度和流入基座22的冷卻液流量來控制基座的溫度，最終使得基座22具有穩定、可控的溫度。實際使用中由於熱交換管道220具有很長的長度，冷卻液在進入入口端220b時的具有較低溫度，隨著冷卻液在管道內流動逐漸吸收管道壁上傳入的熱量，最終從出口端220a流出的溫度會遠高於入口端的溫度，所以基座實際的溫度分佈會受冷卻液管道長度、分佈的影響。同時，冷卻液30從冷卻液容器31出口流出，經過閥門V1到達管道入口220b的過程中實際也是在和周圍大氣空間進行熱量交換的，冷卻液30的溫度也會與設計要求發生偏移。所以現有技術中基座溫度控制系統無法在整個基座上表面獲得均一的溫度分佈，無法滿足溫度均一性要求越來越高的技術需求。FIG. 2 is a schematic diagram of a temperature control system of a pedestal in the prior art. In the figure, the pedestal 22 is provided with a heat exchange pipe 220, and the pipe includes an inlet end 220b and an outlet end 220a. The base temperature control system also includes a coolant container 31 and an input valve V1. The coolant 30 having a set temperature is sent to the inlet 220b through the valve V1, and then returns from the outlet 220a to the coolant container 31 through the valve V3. The temperature of the cooling liquid 30 in the cooling liquid container 31 and the flow of the cooling liquid flowing into the base 22 are controlled to control the temperature of the base, so that the base 22 has a stable and controllable temperature. In actual use, since the heat exchange pipe 220 has a very long length, the cooling liquid has a low temperature when it enters the inlet end 220b. As the cooling liquid flows in the pipe, it gradually absorbs the heat introduced on the wall of the pipe, and finally from the outlet end 220a The temperature of the outflow will be much higher than the temperature at the inlet end, so the actual temperature distribution of the base will be affected by the length and distribution of the coolant pipe. At the same time, the coolant 30 flows from the outlet of the coolant container 31 and passes through the valve V1 to reach the pipe inlet 220b. Actually, heat exchange is performed with the surrounding atmospheric space, and the temperature of the coolant 30 will also deviate from the design requirements. Therefore, in the prior art, the temperature control system of the pedestal cannot obtain a uniform temperature distribution on the entire upper surface of the pedestal, and cannot meet the technical requirements of increasingly higher temperature uniformity requirements.

所以業內需要開發一種新的裝置既能夠實現基座內部不同部位的溫度均勻分佈，也能保證從冷卻液容器到基座的傳輸過程中溫度不發生偏移。Therefore, the industry needs to develop a new device that can not only achieve uniform temperature distribution in different parts of the base, but also ensure that the temperature does not shift during the transmission from the coolant container to the base.

本發明揭露一種用於晶圓處理的反應腔，所述反應腔包括反應腔體，反應腔體是由側壁和頂蓋、底壁圍繞構成的氣密腔體，反應腔內包括一個基座用於支撐待處理晶圓，基座中包括至少一條用於冷卻液流動的熱交換管道，所述熱交換管道包括一個入口端和一個出口端；一個基座溫度控制系統用於控制基座的溫度，基座溫度控制系統包括一個冷卻液容器，冷卻液容器包括一個輸出端，所述輸出端透過第一冷卻液輸送管道連通到所述熱交換管道的入口端，所述熱交換管道的出口端透過第二冷卻液輸送管道連通到冷卻液容器的回流端，其特徵在於，所述冷卻液容器中容納有具有預設溫度的蓄熱混合液，所述蓄熱混合液中包括冷卻液和懸浮在冷卻液中的相變材料微膠囊，所述微膠囊的直徑為1-500um，所述蓄熱混合液流過所述熱交換管道使得所述基座具有均一的溫度。The invention discloses a reaction chamber for wafer processing. The reaction chamber includes a reaction chamber. The reaction chamber is an air-tight chamber surrounded by a side wall, a top cover, and a bottom wall. The reaction chamber includes a base for For supporting the wafer to be processed, the pedestal includes at least one heat exchange pipe for cooling liquid flow, the heat exchange pipe includes an inlet end and an outlet end; and a pedestal temperature control system is used to control the temperature of the pedestal. The base temperature control system includes a cooling liquid container, and the cooling liquid container includes an output end, the output end is connected to the inlet end of the heat exchange tube through the first cooling liquid delivery pipe, and the outlet end of the heat exchange pipe It is connected to the return end of the cooling liquid container through the second cooling liquid conveying pipe, characterized in that the cooling liquid container contains a heat storage mixed liquid having a preset temperature, and the heat storage mixed liquid includes a cooling liquid and a suspension suspended in the cooling liquid. Phase change material microcapsules in liquid, the diameter of the microcapsules is 1-500um, and the heat storage mixed liquid flows through the heat exchange pipe so that the base has uniformity temperature.

其中反應腔中基座由金屬製成，所述基座連接到射頻電源，射頻電源輸出的射頻功率輸入到反應腔，使得基座上方產生等離子體並對晶圓進行等離子處理。反應腔頂部還包括進氣裝置用於輸入反應氣體，所述反應氣體在所述晶圓上反應形成化學氣相沉積材料層。所述冷卻液是電絕緣的導熱液，進一步的，冷卻液可以是熱傳導液(Galden液)。The pedestal in the reaction chamber is made of metal, and the pedestal is connected to a radio frequency power supply, and radio frequency power output by the radio frequency power is input to the reaction chamber, so that plasma is generated above the pedestal and plasma processing is performed on the wafer. The top of the reaction chamber further includes an air inlet device for inputting a reaction gas, and the reaction gas reacts on the wafer to form a chemical vapor deposition material layer. The cooling liquid is an electrically insulating heat conducting liquid. Further, the cooling liquid may be a heat conducting liquid (Galden liquid).

其中相變材料微膠囊中為單一相變材料，所述蓄熱混合液的預設溫度為相變材料微膠囊中相變材料的熔點。相變材料微膠囊中也可以包括多種相變材料，每種相變材料具有各自的熔點。The phase change material microcapsule is a single phase change material, and the preset temperature of the heat storage mixture is the melting point of the phase change material in the phase change material microcapsule. The phase change material microcapsules may also include multiple phase change materials, each of which has its own melting point.

本發明還提供了一種用於晶圓處理的反應腔的第二實施例，所述反應腔包括反應腔體，反應腔體是由側壁和頂蓋、底壁圍繞構成的氣密腔體，反應腔內包括一個基座用於支撐待處理晶圓，基座中包括至少一條用於冷卻液流動的熱交換管道，所述熱交換管道包括一個入口端和一個出口端；一個基座溫度控制系統用於控制基座的溫度，基座溫度控制系統包括第一和第二冷卻液容器，每個冷卻液容器包括一個上部輸出端和一個下部輸出端，每個冷卻液容器內還包括一個微膠囊濾網，所述微膠囊濾網使得微膠囊只能在濾網下方擴散，所述上部輸出端位於濾網上方，下部輸出端位於濾網下方，每個冷卻液容器還包括一個輸入端位於濾網下方；所述第一冷卻液容器中含有第一蓄熱混合液，第二冷卻液容器中含有第二蓄熱混合液； 第一、第二冷卻液容器的上部、下部輸出端透過多個閥門和冷卻液輸送管道連通到所述基座熱交換管道的入口端，第一、第二冷卻液容器的輸入端透過至少一個閥門和冷卻液輸送管道連接到所述基座熱交換管道的出口端。The present invention also provides a second embodiment of a reaction chamber for wafer processing. The reaction chamber includes a reaction chamber. The reaction chamber is an airtight chamber surrounded by a side wall, a top cover, and a bottom wall. The cavity includes a pedestal for supporting the wafer to be processed, and the pedestal includes at least one heat exchange pipe for cooling liquid flow, the heat exchange pipe includes an inlet end and an outlet end; a pedestal temperature control system Used to control the temperature of the base. The base temperature control system includes first and second coolant containers. Each coolant container includes an upper output end and a lower output end. Each coolant container also includes a microcapsule. Strainer, the microcapsule strainer allows the microcapsules to diffuse only under the strainer. The upper output end is located above the strainer and the lower output end is located below the strainer. Each coolant container also includes an input end located on the strainer. Under the net; the first cooling liquid container contains the first heat storage mixed liquid, and the second cooling liquid container contains the second heat storage mixed liquid; the upper parts of the first and second cooling liquid containers, The lower output end is connected to the inlet end of the heat exchange pipe of the base through a plurality of valves and a coolant delivery pipe, and the input ends of the first and second coolant containers are connected to the base through at least one valve and the coolant delivery pipe. The outlet end of the heat exchange pipe.

所述第二實施例的反應腔可以採用如下控制方法：所述基座的溫度在三個階段內變化，第一階段內第一冷卻液容器從下部輸出端輸出第一溫度的第一蓄熱混合液到基座，使基座穩定在所述第一溫度；第二階段內，進行蓄熱混合液切換：第一步中停止第一冷卻液容器下部輸出端的第一蓄熱混合液的輸出，同時第二冷卻液容器的上部輸出端輸出第二溫度的冷卻液到基座熱交換管道入口端，基座熱交換管道的出口端輸出冷卻液到第一冷卻液容器的輸入端直到基座中的微膠囊被沖刷完；沖刷完第一蓄熱混合液中的微膠囊後，停止第二冷卻液容器上部輸出端輸出；第三階段內第二冷卻液容器從下部輸出端輸出第二溫度的第二蓄熱混合液到基座，同時基座熱交換管道的出口端輸出的蓄熱混合液回流到第二冷卻液容器的輸入端，使基座穩定在所述第二溫度。其中所述相變材料微膠囊中的相變材料為石蠟。The reaction chamber of the second embodiment may adopt the following control method: the temperature of the base is changed in three stages, and in the first stage, the first coolant container outputs the first heat storage mixture of the first temperature from the lower output end. Liquid to the base to stabilize the base at the first temperature; in the second stage, the heat storage mixed liquid is switched: in the first step, the output of the first heat storage mixed liquid at the lower output end of the first coolant container is stopped, and the first The upper output end of the two cooling liquid containers outputs the second temperature of the cooling liquid to the inlet end of the heat exchange pipe of the base, and the outlet end of the base heat exchange tube outputs the cooling liquid to the input end of the first cooling liquid container to the micro-end in the base. Capsules have been washed out; after the microcapsules in the first heat storage mixture have been washed out, the output of the upper output end of the second cooling liquid container is stopped; in the third stage, the second cooling liquid container outputs the second heat storage of the second temperature from the lower output end The mixed liquid reaches the base, and at the same time, the heat storage mixed liquid output from the outlet end of the heat exchange pipe of the base returns to the input end of the second cooling liquid container, so that the base is stabilized at the second temperature. The phase change material in the phase change material microcapsule is paraffin.

以下結合圖2，進一步說明本發明的具體實施例。本發明揭露了一種新的冷卻液用於等離子體反應腔中基座22的溫度控制系統。現有技術中，為了防止通入基座22的射頻能量透過冷卻液輸送管道洩漏到外部環境，所以冷卻液採用具有絕緣特性的液體，典型的為Galden液，也可以是其它電絕緣的液體。由於不斷的和基座22進行熱交換，冷卻液溫度逐漸變化無法保證冷卻液管道入口到出口之間溫度的均一。本發明提出一種蓄熱冷卻液，該蓄熱冷卻液主體仍然是傳統的冷卻液如Galden液，但是在冷卻液中懸浮有大量微膠囊，微膠囊內部包裹有相變材料，這些相變材料具有穩定的相變溫度，如20度，當蓄熱冷卻液吸收外部熱量時，這些熱量被微膠囊中的相變材料吸收，相變材料吸熱逐漸相變為液態，但是整個相變材料顆粒的溫度恆定不變。由於冷卻液中大量懸浮有相變材料微膠囊，所以冷卻液流動過程中從冷卻液管道壁傳入蓄熱冷卻液的熱量只會引起這些微膠囊內相變材料的相變，整體冷卻液的溫度不會發生明顯變化。最終從冷卻液容器31出口到熱交換管道入口端220b再到熱交換管道出口端220a直到流回冷卻液容器31，蓄熱冷卻液不會發生明顯的溫度變化。所以基座22中具有均一的溫度分佈，不再受管道長度、管道空間排布等因素的影響。其中相變材料微膠囊的直徑可以是1um-500um不等，相變材料可以選擇有機化合物，只要該有機化合物的熔點是在等離子處理技術所需的溫度範圍就能應用于本發明場合，如20-80度。相變材料最典型、成本最低的是石蠟，石蠟是有多種直鏈烷烴混合而成，其中短鏈的烷烴如C16 H34 的熔點為16.7度，C21 H44 的熔點為44度，長鏈的烷烴如C30 H62 的熔點為65度，所以本發明中的相變材料可以選擇的成分範圍很廣，需要根據具體等離子處理技術的需要選擇優化。比如當等離子處理裝置長期只運行同一種技術時，可以選擇該技術對應的基座溫度如21度，對應的可以選擇主要成分為C17 H36 （熔點21.4度）作為相變材料。當等離子處理技術需要在不同溫度範圍內變化時，可以將具有不同熔點的材料混合成。隨著溫度上升，這種混合材料的相變微膠囊中不同材料逐次融化。比如等離子處理技術需要在21-65度之間變化，基座溫度控制系統中的冷卻液容器31初始輸出的溫度可以是20度左右，經過基座22中的熱交換管道220後只有熔點為21度的相變材料融化，其它具有更高熔點的材料吸收了熱量溫度沒有變化，同樣的當需要工作在65度時，冷卻液容器31需要輸入大量熱到蓄熱混合液30，在輸送熱量過程中逐漸將低熔點的材料全部融化，直到達到65度左右再將蓄熱混合液30送入基座22內進行熱量交換。這種由混合相變材料構成的相變材料膠囊也能實現基座22上具有均勻的溫度，所以也能夠實現本發明目的。但是這種混合相變材料也具有部分缺點，在基座22內流動過程中實際只有一種成分的相變材料在進行相變吸熱，其餘不是這個熔點的相變材料成分均已全部變為固態或者液態，所以這種混合相變材料只有部分材料具有蓄熱能力，相比單一材料蓄熱能力明顯不足，對於需要高功率的等離子技術來說，有可能發生蓄熱混合液還未流出出口端220a時有效的相變材料已經全部發生相變，無法再透過相變吸熱並維持微膠囊的溫度，這時出口端220a的溫度會高於入口端220b的溫度。另一方面，這種混合相變材料中已經全部變為固體的材料會阻隔有效相變材料與微膠囊外部冷卻液溶液之間的熱量傳導通路，這也會明顯減小蓄熱混合液的蓄熱能力。在技術溫度需要快速變化的場合，透過冷卻液容器31的快速加熱或散熱實現蓄熱混合液快速變化很難實現，容器31內大量蓄熱混合液升溫本身需要加熱，同時額外的相變所需熱量也要同步輸入，所以這種蓄熱混合液從20到60度需要的熱量會高於傳統的冷卻液，而且全部相變材料完成相變需要時間傳遞熱量到每一個懸浮在冷卻液中的微膠囊。短時間內快速加熱蓄熱混合液，將需要大功率的加熱或散熱裝置，不具有經濟價值。The specific embodiment of the present invention is further described below with reference to FIG. 2. The invention discloses a new cooling liquid used for the temperature control system of the base 22 in the plasma reaction chamber. In the prior art, in order to prevent the radio frequency energy passing through the base 22 from leaking to the external environment through the cooling liquid transmission pipeline, the cooling liquid is a liquid with insulating properties, typically a Galden liquid, or other electrically insulating liquids. Due to the constant heat exchange with the base 22, the gradual change in the temperature of the cooling liquid cannot guarantee a uniform temperature between the inlet and the outlet of the cooling liquid pipe. The invention proposes a heat storage coolant. The main body of the heat storage coolant is still a traditional coolant such as Galden fluid, but a large number of microcapsules are suspended in the coolant, and the microcapsules are enclosed with a phase change material. These phase change materials have stable properties. Phase change temperature, such as 20 degrees. When the heat storage coolant absorbs external heat, this heat is absorbed by the phase change material in the microcapsules, and the phase change material gradually absorbs heat and changes into a liquid state. . Because a large amount of phase change material microcapsules are suspended in the coolant, the heat transferred from the coolant pipe wall to the heat storage coolant during the coolant flow will only cause the phase change of the phase change material in these microcapsules, and the temperature of the overall coolant. No significant changes will occur. Eventually, from the outlet of the cooling liquid container 31 to the inlet end 220b of the heat exchange tube to the outlet end 220a of the heat exchange tube until flowing back to the cooling liquid container 31, the heat storage cooling liquid does not undergo a significant temperature change. Therefore, the base 22 has a uniform temperature distribution, and is no longer affected by factors such as the length of the pipeline and the arrangement of the pipeline space. The diameter of the phase change material microcapsules can range from 1um to 500um, and the phase change material can be selected from organic compounds. As long as the melting point of the organic compound is in the temperature range required by the plasma processing technology, it can be applied to the present invention, such as 20 -80 degrees. The most typical and lowest cost of phase change materials is paraffin. Paraffin is a mixture of a variety of linear alkanes. Among them, short-chain alkanes such as C 16 H 34 have a melting point of 16.7 degrees and C 21 H 44 has a melting point of 44 degrees. The melting point of the chain alkane such as C 30 H 62 is 65 degrees, so the phase change material in the present invention can select a wide range of components, which needs to be selected and optimized according to the needs of specific plasma processing technology. For example, when the plasma processing device only runs the same technology for a long time, the base temperature corresponding to the technology can be selected as 21 degrees, and the corresponding main component can be C 17 H 36 (melting point 21.4 degrees) as the phase change material. When the plasma processing technology needs to be changed in different temperature ranges, materials with different melting points can be mixed. As the temperature rises, different materials in the phase-change microcapsules of this mixed material gradually melt. For example, the plasma processing technology needs to be changed between 21-65 degrees. The initial output temperature of the coolant container 31 in the base temperature control system can be about 20 degrees. After passing through the heat exchange pipe 220 in the base 22, the melting point is only 21. Phase change material melts, other materials with higher melting points absorb the heat and the temperature does not change. Similarly, when it is required to work at 65 degrees, the coolant container 31 needs to input a large amount of heat to the heat storage mixed liquid 30. During the heat transfer process, The low-melting material is gradually melted until it reaches about 65 degrees, and then the heat storage mixed solution 30 is sent into the base 22 for heat exchange. Such a phase change material capsule composed of a mixed phase change material can also achieve a uniform temperature on the base 22, so the object of the present invention can also be achieved. However, this mixed phase change material also has some disadvantages. In the flow process in the base 22, only one phase change material actually undergoes phase change heat absorption, and the remaining phase change material components that do not have this melting point have all become solid or Liquid, so only some materials of this mixed phase change material have heat storage capacity. Compared with single material, the heat storage capacity is obviously insufficient. For plasma technology that requires high power, it may happen that the heat storage mixed liquid has not flowed out of the outlet 220a. All phase change materials have undergone phase change, and can no longer absorb heat through the phase change and maintain the temperature of the microcapsules. At this time, the temperature of the outlet end 220a will be higher than the temperature of the inlet end 220b. On the other hand, the materials that have all become solid in this mixed phase change material will block the heat conduction path between the effective phase change material and the external cooling solution of the microcapsule, which will also significantly reduce the heat storage capacity of the heat storage mixed liquid . Where the technical temperature needs to change rapidly, it is difficult to achieve rapid change of the heat storage mixed liquid through the rapid heating or heat dissipation of the cooling liquid container 31. A large amount of heat storage mixed liquid in the container 31 needs to be heated in order to heat up, and the additional heat required for phase change is also required. To synchronize the input, so the heat storage mixture requires 20 to 60 degrees more heat than traditional coolants, and the phase change of all phase change materials requires time to transfer heat to each microcapsule suspended in the coolant. The rapid heating of the heat-storage mixture in a short time will require high-power heating or heat-dissipating devices, and will not have economic value.

為了更好的適應在兩個技術溫度之間快速切換的應用需要，本發明提供了如圖3所示的另一個實施例。圖3所示的基座溫度控制系統與圖2相比包括了兩個冷卻液容器31、41，以及兩個容器各自對應的閥門V1、V2、共用的閥門V3。同時上述冷卻液容器31、41內的中上部還設置了相變材料微膠囊濾網F1、F2，只能允許冷卻液在濾網上下流通，相變材料微膠囊無法穿過。上述兩個微膠囊濾網F1、F2將容器31、41分隔為上部純冷卻液區和下部冷卻液和相變材料微膠囊的混合區，上下兩部均包括一個液體出口連通到對應的閥門V1、V2In order to better meet the application needs of fast switching between two technical temperatures, the present invention provides another embodiment shown in FIG. 3. Compared with FIG. 2, the base temperature control system shown in FIG. 3 includes two coolant containers 31 and 41, and valves V1 and V2 corresponding to the two containers, and a common valve V3. At the same time, phase change material microcapsule filters F1 and F2 are also set in the upper and middle parts of the coolant containers 31 and 41, and the coolant can only be allowed to circulate above and below the filter screen. The phase change material microcapsules cannot pass through. The above two microcapsule filters F1 and F2 separate the containers 31 and 41 into an upper pure cooling liquid zone and a lower cooling liquid and phase change material microcapsule mixing zone. The upper and lower parts each include a liquid outlet connected to the corresponding valve V1. , V2

冷卻液容器31內存儲的第一蓄熱混合液30中含有大量第一相變材料微膠囊，第一相變材料微膠囊中的相變材料熔點在20度，冷卻液容器41內存儲的第二蓄熱混合液40含有大量第二相變材料微膠囊，其相變材料的熔點在60度。在工作過程中冷卻液容器透過加熱/散熱的機構使得第一蓄熱混合液30保持在20度，第二蓄熱混合液40保持在60度。在第一處理技術中需要使基座22具有20度的溫度，所以冷卻液容器31下部出口透過開通的閥門V1流入基座22中的熱交換管道220，使得基座22保持在20度恆定不變。The first heat storage mixed solution 30 stored in the coolant container 31 contains a large number of first phase change material microcapsules. The melting point of the phase change material in the first phase change material microcapsule is 20 degrees. The heat storage mixture 40 contains a large number of second phase change material microcapsules, and the melting point of the phase change material is 60 degrees. During the working process, the cooling liquid container passes through the heating / radiating mechanism so that the first heat storage mixed liquid 30 is maintained at 20 degrees, and the second heat storage mixed liquid 40 is maintained at 60 degrees. In the first processing technology, it is necessary to make the base 22 have a temperature of 20 degrees, so the lower outlet of the coolant container 31 flows into the heat exchange pipe 220 in the base 22 through the open valve V1, so that the base 22 is maintained at a constant temperature of 20 degrees. change.

當等離子處理裝置需要運行第二處理技術時，基座22需要快速轉換到60度，需要一個蓄熱混合液切換過程。在蓄熱混合液切換過程至少包括兩個步驟，步驟1：首先將冷卻液容器41上部的具有60度溫度的純冷卻液透過閥門V2輸送入該基座22內熱交換管220，在加熱基座22的同時將殘留在基座22內熱交換管220內的具有第一相變材料微膠囊顆粒沖刷出來。沖刷出來的第一相變材料微膠囊隨著與基座22進行過熱交換後的冷卻液流過閥門V3到達冷卻液容器31的下部，這樣第一相變材料微膠囊實現了有效回收，避免了不同熔點的相變材料微膠囊發生混合後無法分離。步驟2：隨後控制閥門V2的機構，停止從冷卻液容器41的上部輸出冷卻液，改為從冷卻液容器的下部輸出混合有第二相變材料微膠囊的第二蓄熱液到基座22，直到基座溫度達到目標溫度60度，隨後進行第二處理技術。圖4所示為上述蓄熱混合液切換過程中溫度變化曲線，步驟1中採用與現有技術相同的純冷卻液加熱，所以其溫度曲線與現有技術重合，在步驟2中本發明改為第二蓄熱混合液輸送到基座22，其中蓄積的熱量可以保證第二蓄熱混合液在整個回路中始終保持在60度，快速加熱基座22。現有技術由於純冷卻液在基座22的管道內流動過程中不斷被基座22帶走熱量，所以冷卻液溫度不斷降低，到出口端220a時溫度明顯低於入口端220b時的溫度，所以現有技術加熱基座22的速度明顯低於本發明，最終的溫度曲線如圖4中虛線部分所示，現有技術溫升更慢，需要耗費更多時間。When the plasma processing device needs to run the second processing technology, the base 22 needs to be quickly switched to 60 degrees, and a heat storage mixed liquid switching process is required. The heat storage mixed liquid switching process includes at least two steps. Step 1: First, the pure cooling liquid with a temperature of 60 degrees at the upper part of the cooling liquid container 41 is transferred into the heat exchange tube 220 in the base 22 through the valve V2. At the same time, the microcapsule particles with the first phase change material remaining in the heat exchange tube 220 in the base 22 are flushed out. The scoured first phase change material microcapsules flow through the valve V3 to the lower part of the cooling liquid container 31 with the coolant after the heat exchange with the base 22, so that the first phase change material microcapsules are effectively recovered and avoided. Phase change material microcapsules with different melting points cannot be separated after mixing. Step 2: The mechanism that controls the valve V2 subsequently stops outputting the cooling liquid from the upper portion of the cooling liquid container 41, and instead outputs the second heat storage liquid mixed with the second phase change material microcapsules to the base 22 from the lower portion of the cooling liquid container. Until the base temperature reaches the target temperature of 60 degrees, a second processing technique is then performed. FIG. 4 shows the temperature change curve during the switching of the heat storage mixed liquid. In step 1, the same pure cooling liquid as in the prior art is used for heating, so the temperature curve coincides with the existing technology. In step 2, the present invention is changed to the second heat storage. The mixed liquid is sent to the base 22, and the accumulated heat can ensure that the second heat storage mixed liquid is always maintained at 60 degrees in the entire circuit, and the base 22 is quickly heated. In the prior art, since pure coolant is continuously taken away by the base 22 during the flow in the pipe of the base 22, the temperature of the coolant is continuously reduced, and the temperature at the outlet end 220a is significantly lower than the temperature at the inlet end 220b. The speed of the technical heating base 22 is obviously lower than that of the present invention. The final temperature curve is shown in the dotted line in FIG. 4. The temperature rise of the prior art is slower and requires more time.

第二處理技術完成需要切換回到第一處理技術時進行反向操作：步驟1：容器31內上部具有20度的純冷卻液將管道內剩餘的第二相變材料微膠囊沖刷送回容器41下部；步驟2：完成沖刷後切換為容器31下部的第一蓄熱混合液31經過V1流入基座22。When the second processing technology is completed, the reverse operation is required when switching back to the first processing technology: Step 1: The upper part of the container 31 has 20 degrees of pure cooling liquid, and the second phase change material microcapsules remaining in the pipeline are flushed back to the container 41 Lower part; Step 2: After the flushing is completed, the first heat storage mixed solution 31 switched to the lower part of the container 31 flows into the base 22 through V1.

本發明圖3所示的各個閥門V1、V2、V3和附屬的冷卻液供應管道，可以有其它多種實施例，比如閥門V1、V2、V3可以是多個單通閥門的組合，透過分別控制各個單通閥門的開關實現本發明中V1的三通閥門功能。V1和V2的輸出端也可以透過兩個獨立的冷卻液供應管道連接到基座22的入口端220b。上述這些改動均為業內人士很容易想到的簡單替換，仍然屬於本發明方案範圍。Each of the valves V1, V2, V3 and the attached coolant supply pipeline shown in FIG. 3 of the present invention may have various other embodiments. For example, the valves V1, V2, and V3 may be a combination of multiple one-way valves. The switch of the one-way valve realizes the function of the three-way valve of V1 in the present invention. The output ends of V1 and V2 can also be connected to the inlet end 220b of the base 22 through two independent coolant supply pipes. These changes are simple replacements that can be easily conceived by those skilled in the art, and still belong to the scope of the present invention.

本發明藉由在冷卻液中添加相變材料微膠囊使得冷卻液形成蓄熱混合液，蓄熱混合液流過基座22過程中不會發生溫度變化，從而使得基座22內熱交換管道220不同部位均勻進行熱交換，基座22具有均一的溫度分佈。相變材料微膠囊中包裹的相變材料可以具有單一的熔點，也可以是多種不同熔點材料的混合物，實現一定溫度範圍內的多熔點相變材料。本發明也可以設置兩種以上具有單一熔點的相變材料在兩個獨立的冷卻液容器中，透過蓄熱混合液切換過程實現兩者蓄熱混合液在切換過程中兩種相變材料微膠囊的隔離。In the present invention, by adding phase change material microcapsules to the cooling liquid, the cooling liquid forms a heat storage mixed liquid, and the temperature of the heat storage mixed liquid does not change during the flow through the base 22, so that different parts of the heat exchange pipe 220 in the base 22 are uniform The heat exchange is performed, and the base 22 has a uniform temperature distribution. The phase change material encapsulated in the phase change material microcapsule may have a single melting point or a mixture of a plurality of different melting point materials to achieve a multi-melting point phase change material within a certain temperature range. The present invention can also provide two or more phase change materials with a single melting point in two independent cooling liquid containers, and realize the isolation of the two phase change materials microcapsules during the switching process of the two thermal storage mixed liquids through the switching process of the thermal storage mixed liquids. .

本發明除了可以應用於等離子處理裝置實現對晶圓的刻蝕或者化學氣相沉積（CVD），也可以用於其它反應腔，比如熱處理反應腔，只需要將晶圓加熱到足夠的溫度不需要利用等離子對晶圓進行處理，任何對晶圓處理過程中對溫度均一性要求高的反應腔均可以採用本發明的蓄熱混合液作為基座22熱交換管道220中的冷卻液，實現本發明的目的。In addition to being applicable to plasma processing equipment to realize wafer etching or chemical vapor deposition (CVD), the invention can also be used in other reaction chambers, such as heat treatment reaction chambers, as long as the wafer is heated to a sufficient temperature. The plasma is used to process the wafer. Any reaction chamber that requires high temperature uniformity during wafer processing can use the thermal storage mixed liquid of the present invention as the cooling liquid in the heat exchange pipe 220 of the pedestal 22 to implement the present invention. purpose.

儘管本發明的內容已經藉由上述較佳地實施例作了詳細介紹，但應當認識到上述的描述不應被認為是對本發明的限制。在本領域技術人員閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由所附的申請專利範圍來限定。Although the content of the present invention has been described in detail through the above-mentioned preferred embodiments, it should be recognized that the above description should not be considered as limiting the present invention. Various modifications and alternatives to the present invention will be apparent to those skilled in the art after reading the foregoing. Therefore, the protection scope of the present invention should be defined by the scope of the attached patent application.

1、2‧‧‧匹配器1, 2‧‧‧ Matcher

10‧‧‧邊緣環10‧‧‧ edge ring

11‧‧‧上電極11‧‧‧up electrode

100‧‧‧反應腔100‧‧‧ reaction chamber

110‧‧‧氣源110‧‧‧Air source

20‧‧‧晶圓20‧‧‧ wafer

21‧‧‧靜電夾盤21‧‧‧ electrostatic chuck

22‧‧‧基座22‧‧‧ base

220‧‧‧熱交換管220‧‧‧heat exchange tube

220a‧‧‧熱交換管道出口端220a‧‧‧Export end of heat exchange pipe

220b‧‧‧熱交換管道入口端220b‧‧‧Heat exchange pipe inlet

30‧‧‧第一蓄熱混合液30‧‧‧The first heat storage mixture

31‧‧‧冷卻液容器31‧‧‧coolant container

33‧‧‧第一射頻電源33‧‧‧First RF Power Supply

32‧‧‧第二射頻電源32‧‧‧Second RF Power Supply

40‧‧‧第二蓄熱混合液40‧‧‧Second heat storage mixture

41‧‧‧冷卻液容器41‧‧‧coolant container

F1、F2‧‧‧微膠囊濾網F1, F2 ‧‧‧ microcapsule filter

V1、V2‧‧‧閥門V1, V2‧‧‧ Valve

V3‧‧‧共用的閥門V3‧‧‧shared valve

圖1為現有技術等離子處理裝置示意圖；1 is a schematic diagram of a prior art plasma processing device;

圖2為現有技術基座溫度控制系統示意圖；2 is a schematic diagram of a prior art base temperature control system;

圖3是本發明基座溫度控制系統示意圖；3 is a schematic diagram of a base temperature control system according to the present invention;

圖4是本發明與現有技術溫度控制系統溫度轉換過程示意圖。FIG. 4 is a schematic diagram of a temperature conversion process between the present invention and the prior art temperature control system.

Claims (11)

一種用於晶圓處理的反應腔，該反應腔包括一反應腔體，該反應腔體是由一側壁和一頂蓋、一底壁圍繞構成的一氣密腔體，該反應腔內包括一基座用於支撐待處理之一晶圓，該基座中包括至少一用於冷卻液流動的熱交換管道，該熱交換管道包括一入口端和一出口端； 一基座溫度控制系統用於控制該基座的溫度，該基座溫度控制系統包括一冷卻液容器，該冷卻液容器包括一輸出端，該輸出端透過一第一冷卻液輸送管道連通到該熱交換管道的入口端，該熱交換管道的出口端透過一第二冷卻液輸送管道連通到該冷卻液容器的一回流端， 其中，該冷卻液容器中容納有具有預設溫度的一蓄熱混合液，該蓄熱混合液中包括一冷卻液和懸浮在該冷卻液中的一相變材料微膠囊，該蓄熱混合液流過該熱交換管道使得該基座具有均一的溫度。A reaction chamber for wafer processing. The reaction chamber includes a reaction chamber. The reaction chamber is an air-tight chamber surrounded by a side wall, a top cover, and a bottom wall. The reaction chamber includes a base. The base is used to support a wafer to be processed. The base includes at least one heat exchange pipe for cooling liquid flow. The heat exchange pipe includes an inlet end and an outlet end. A base temperature control system is used for controlling. The temperature of the base, the base temperature control system includes a coolant container, the coolant container includes an output end, the output end is connected to the inlet end of the heat exchange pipe through a first coolant delivery pipe, and the heat An outlet end of the exchange pipe is connected to a return end of the cooling liquid container through a second cooling liquid conveying pipe, wherein the cooling liquid container contains a heat storage mixed liquid having a preset temperature, and the heat storage mixed liquid includes a The cooling liquid and a phase change material microcapsule suspended in the cooling liquid, and the heat storage mixed liquid flows through the heat exchange pipe so that the base has a uniform temperature. 如申請專利範圍第1項所述的用於晶圓處理的反應腔，其中，該反應腔中的該基座由金屬製成，該基座連接到一射頻電源，該射頻電源輸出的射頻功率輸入到該反應腔，使得該基座上方產生一等離子體並對一晶圓進行等離子處理。The reaction chamber for wafer processing according to item 1 of the patent application scope, wherein the base in the reaction chamber is made of metal, the base is connected to an RF power source, and the RF power output by the RF power source is Input to the reaction chamber, so that a plasma is generated above the susceptor and plasma processing is performed on a wafer. 如申請專利範圍第1項所述的用於晶圓處理的反應腔，其中，該反應腔頂部還包括一進氣裝置用於輸入一反應氣體，該反應氣體在該晶圓上反應形成化學氣相沉積材料層。The reaction chamber for wafer processing according to item 1 of the scope of patent application, wherein the top of the reaction chamber further includes an air inlet device for inputting a reaction gas, and the reaction gas reacts to form a chemical gas on the wafer. Phase deposited material layer. 如申請專利範圍第1項所述的用於晶圓處理的反應腔，其中，該蓄熱混合液的預設溫度為相變材料微膠囊中相變材料的熔點。The reaction chamber for wafer processing according to item 1 of the scope of the patent application, wherein the preset temperature of the heat storage mixture is the melting point of the phase change material in the phase change material microcapsule. 如申請專利範圍第1項所述的用於晶圓處理的反應腔，其中，該相變材料微膠囊中包括複數種類的相變材料，各種類的相變材料具有各自的熔點。The reaction chamber for wafer processing according to item 1 of the scope of the patent application, wherein the phase change material microcapsule includes a plurality of types of phase change materials, and each type of phase change material has a respective melting point. 如申請專利範圍第1項所述的用於晶圓處理的反應腔，其中，該冷卻液是電絕緣的導熱液。The reaction chamber for wafer processing according to item 1 of the scope of patent application, wherein the cooling liquid is an electrically insulating thermal conductive liquid. 如申請專利範圍第6項所述的用於晶圓處理的反應腔，其中，該冷卻液是Galden液。The reaction chamber for wafer processing according to item 6 of the patent application scope, wherein the cooling liquid is a Galden liquid. 如申請專利範圍第1項所述的用於晶圓處理的反應腔，其中，該相變材料微膠囊的直徑為1-500um。The reaction chamber for wafer processing according to item 1 of the scope of patent application, wherein the phase change material microcapsule has a diameter of 1-500um. 一種用於晶圓處理的一反應腔，該反應腔包括一反應腔體，該反應腔體是由一側壁和一頂蓋、一底壁圍繞構成的一氣密腔體，該反應腔內包括一基座用於支撐待處理晶圓，該基座中包括至少一用於冷卻液流動的熱交換管道，該熱交換管道包括一入口端和一出口端； 一基座溫度控制系統用於控制該基座的溫度，該基座溫度控制系統包括一第一和一第二冷卻液容器，各該冷卻液容器包括一上部輸出端和一下部輸出端，各該冷卻液容器內還包括一微膠囊濾網，該微膠囊濾網使得一微膠囊只能在該微膠囊濾網下方擴散，該上部輸出端位於該微膠囊濾網上方，該下部輸出端位於該微膠囊濾網下方，各該冷卻液容器還包括一輸入端位於該微膠囊濾網下方；該第一冷卻液容器中含有一第一蓄熱混合液，該第二冷卻液容器中含有一第二蓄熱混合液； 該第一及該第二冷卻液容器的該上部及該下部輸出端透過複數個閥門和一冷卻液輸送管道連通到該基座的該熱交換管道的入口端，該第一及該第二冷卻液容器的該輸入端透過至少一閥門和該冷卻液輸送管道連接到該基座的該熱交換管道的出口端。A reaction chamber for wafer processing includes a reaction chamber. The reaction chamber is an air-tight chamber surrounded by a side wall, a top cover, and a bottom wall. The reaction chamber includes a The pedestal is used to support the wafer to be processed. The pedestal includes at least one heat exchange pipe for cooling liquid flow, the heat exchange pipe includes an inlet end and an outlet end; a pedestal temperature control system is used to control the The temperature of the base. The base temperature control system includes a first and a second coolant container. Each of the coolant containers includes an upper output end and a lower output end. Each of the coolant containers also includes a microcapsule. Filter, the microcapsule filter allows a microcapsule to diffuse only under the microcapsule filter, the upper output end is located above the microcapsule filter, the lower output end is located below the microcapsule filter, and each of the cooling The liquid container further includes an input end located under the microcapsule filter; the first cooling liquid container contains a first heat storage mixed liquid, and the second cooling liquid container contains a second heat storage mixed liquid; the first and the First The upper and lower output ends of the coolant container are connected to the inlet end of the heat exchange pipe of the base through a plurality of valves and a coolant delivery pipe, and the input ends of the first and second coolant containers pass through At least one valve and the coolant delivery pipe are connected to an outlet end of the heat exchange pipe of the base. 如申請專利範圍第9項所述的用於晶圓處理的反應腔的控制方法，其中，該基座的溫度在三個階段內變化， 第一階段內該第一冷卻液容器從該下部輸出端輸出一第一溫度的該第一蓄熱混合液到該基座，使基座穩定在該第一溫度； 第二階段內，進行一蓄熱混合液切換： 第一步中停止該第一冷卻液容器的該下部輸出端的該第一蓄熱混合液的輸出，同時該第二冷卻液容器的該上部輸出端輸出一第二溫度的一冷卻液到該基座之該熱交換管道的入口端，該基座之該熱交換管道的出口端輸出該冷卻液到該第一冷卻液容器的該輸入端直到該基座中的該微膠囊被沖刷完； 沖刷完該第一蓄熱混合液中的該微膠囊後，停止該第二冷卻液容器之該上部輸出端輸出； 第三階段內該第二冷卻液容器從該下部輸出端輸出該第二溫度的該第二蓄熱混合液到該基座，同時該基座之該熱交換管道的出口端輸出的該蓄熱混合液回流到該第二冷卻液容器的該輸入端，使該基座穩定在該第二溫度。The method for controlling a reaction chamber for wafer processing according to item 9 of the scope of patent application, wherein the temperature of the pedestal is changed in three stages, and the first coolant container is output from the lower part in the first stage The first heat storage mixed liquid of a first temperature is output to the base to stabilize the base at the first temperature; in the second stage, a heat storage mixed liquid is switched: the first cooling liquid is stopped in the first step The output of the first heat storage mixed liquid at the lower output end of the container, and at the same time the upper output end of the second cooling liquid container outputs a second temperature of a cooling liquid to the inlet end of the heat exchange pipe of the base, the An outlet end of the heat exchange pipe of the base outputs the cooling liquid to the input end of the first cooling liquid container until the microcapsules in the base are completely flushed out; After the capsule is stopped, the output of the upper output end of the second cooling liquid container is stopped; in the third stage, the second cooling liquid container outputs the second heat storage mixed liquid of the second temperature from the lower output end to the base, and at the same time The base The regenerative heat exchange conduit outlet end of the output was refluxed to the second input terminal of the coolant vessel, so that the stability in the second base temperature. 如申請專利範圍第1項所述的用於晶圓處理的反應腔，其中，該相變材料微膠囊中的相變材料為石蠟。The reaction chamber for wafer processing according to item 1 of the scope of patent application, wherein the phase change material in the phase change material microcapsule is paraffin.
TW106137260A 2016-12-29 2017-10-27 Reaction chamber for wafer processing TWI667685B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
??201611245188.1 2016-12-29
CN201611245188.1A CN108257839B (en) 2016-12-29 2016-12-29 A kind of reaction chamber for wafer-process

Publications (2)

Publication Number Publication Date
TW201841201A true TW201841201A (en) 2018-11-16
TWI667685B TWI667685B (en) 2019-08-01

Family

ID=62719860

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106137260A TWI667685B (en) 2016-12-29 2017-10-27 Reaction chamber for wafer processing

Country Status (2)

Country Link
CN (1) CN108257839B (en)
TW (1) TWI667685B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111303821A (en) * 2020-03-14 2020-06-19 广东力王新材料有限公司 Single-component heat storage potting material

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112216585B (en) * 2019-07-11 2022-12-30 中微半导体设备(上海)股份有限公司 Plasma processor and base temperature control method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8608900B2 (en) * 2005-10-20 2013-12-17 B/E Aerospace, Inc. Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes
TWI411464B (en) * 2009-08-19 2013-10-11 Eternal Chemical Co Ltd Microcapsule of phase change materials encapsulated with natural microtubule and their production
US8916793B2 (en) * 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US20150060013A1 (en) * 2013-09-05 2015-03-05 Applied Materials, Inc. Tunable temperature controlled electrostatic chuck assembly
CN105374657B (en) * 2014-07-18 2017-07-25 中微半导体设备(上海)有限公司 Plasma processing apparatus and its temprature control method
KR101479251B1 (en) * 2014-08-07 2015-01-05 (주) 씨앤아이테크놀로지 Sputtering Apparatus for EMI shielding of Semiconductor Packages and In-line Sputtering Deposition System Having the Same
TWI531671B (en) * 2014-12-17 2016-05-01 Linco Technology Co Ltd A cooling system with a plate cooling function
CN104723525A (en) * 2015-03-06 2015-06-24 北京化工大学 Phase-change temperature-control injection molding equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111303821A (en) * 2020-03-14 2020-06-19 广东力王新材料有限公司 Single-component heat storage potting material

Also Published As

Publication number Publication date
CN108257839B (en) 2019-10-08
CN108257839A (en) 2018-07-06
TWI667685B (en) 2019-08-01

Similar Documents

Publication Publication Date Title
US11043360B2 (en) Gas distribution plate assembly for high power plasma etch processes
US10790180B2 (en) Electrostatic chuck with variable pixelated magnetic field
KR101737474B1 (en) Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies
US9681497B2 (en) Multi zone heating and cooling ESC for plasma process chamber
KR101187544B1 (en) Mounting table structure and plasma film forming apparatus
CN100565787C (en) Base sheet rack with surface of controlled temperature
CN102102194A (en) Temperature controlled showerhead for high temperature operations
JP2007335425A (en) Mounting table structure and heat treatment equipment
TWI667685B (en) Reaction chamber for wafer processing
JP2002076103A (en) Method and apparatus for controlling temperature of sample stage, and method and apparatus for processing sample
KR102411194B1 (en) Electrostatic chuck assemblies capable of bidirectional flow of coolant and semiconductor fabricating apparatus having the same
KR102608957B1 (en) Plasma processing apparatus
US20220199378A1 (en) Electrostatic chuck with spatially tunable rf coupling to a wafer
KR102606056B1 (en) Plasma-based reactor cooling
US11434568B2 (en) Heated ceramic faceplate
JP2017506828A (en) Multiple fluid cooling system for wide temperature range chucks
US10867829B2 (en) Ceramic hybrid insulator plate
JP5696183B2 (en) Plasma processing equipment
CN111383885B (en) Substrate mounting table capable of improving temperature control precision and plasma processing equipment
CN103369810A (en) Plasma reactor
JP2008262968A (en) Plasma processing apparatus and plasma processing method
JP2010199421A (en) Plasma processing apparatus and plasma etching method
TW202025380A (en) Plasma processing device and substrate support base for the same for enabling local substrate temperature of each area to be more uniform and enhancing product yield of substrates
WO2015116500A1 (en) Electrostatic chuck with magnetic cathode liner for critical dimension (cd) tuning
CN214226885U (en) Pre-cleaning reactor