TW202025380A - Plasma processing device and substrate support base for the same for enabling local substrate temperature of each area to be more uniform and enhancing product yield of substrates - Google Patents

Plasma processing device and substrate support base for the same for enabling local substrate temperature of each area to be more uniform and enhancing product yield of substrates Download PDF

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TW202025380A
TW202025380A TW108145740A TW108145740A TW202025380A TW 202025380 A TW202025380 A TW 202025380A TW 108145740 A TW108145740 A TW 108145740A TW 108145740 A TW108145740 A TW 108145740A TW 202025380 A TW202025380 A TW 202025380A
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heat
substrate support
layer
heating
heating layer
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TW108145740A
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TWI725666B (en
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劉季霖
狄 吳
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大陸商中微半導體設備（上海）股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Abstract

The present invention discloses a plasma processing device and a substrate support base for the same. The substrate support base comprises: a base, a heating layer and an electrostatic chuck sequentially disposed on the base, and a heat conduction layer disposed between the heating layer and the electrostatic chuck. The electrostatic chuck is provided for holding the substrate. The heating layer is provided for temperature control of the substrate disposed on the electrostatic chuck. The heat conduction layer includes a plurality of grooves distributed on the heating layer, and heat-conductive metal fluid filled in the grooves, wherein the thermal conductivity of the heat-conductive metal is greater than 50 W/mK. The heat-conductive metal fluid flows inside the grooves so that the substrate support base is provided with uniform temperature. The heat-conductive metal of the present invention may flow in the grooves toward the areas with lower temperature so as to fully realize the heat convection exchange among areas, thereby enabling the local substrate temperature in each area to be more uniform and thus enhancing the product yield of substrates.

Description

電漿處理裝置及用於處理裝置的基片支座Plasma processing device and substrate support for processing device

本發明涉及半導體加工技術領域，特別涉及一種電漿處理裝置及用於所述處理裝置的基片支座。The present invention relates to the technical field of semiconductor processing, in particular to a plasma processing device and a substrate support used for the processing device.

在半導體元件的製造過程中，為了在基片上進行沉積、蝕刻等製程處理時，一般藉由靜電吸盤（Electrostatic chuck，簡稱ESC）產生的靜電力在處理期間對基片進行支撐及固定。In the manufacturing process of semiconductor devices, in order to perform process processing such as deposition and etching on the substrate, the electrostatic force generated by an electrostatic chuck (ESC) is generally used to support and fix the substrate during processing.

靜電吸盤通常位於電漿處理腔室的底部，位於一基座的上方，一般包括在陶瓷介電層中埋設的電極；藉由在所述電極上施加直流，進而產生靜電電荷來吸持介電層上放置的基片。在所述在瓷介電層的下方設置基座對其進行支撐；所述基座中設有熱交換器（chiller），所述熱交換器設有加熱層，其在對基片進行處理時，所述加熱層對靜電吸盤進行多區域溫控，進而可以分區域調整基片的溫度，從而調整基片刻蝕的均勻性，達到最高質量產出。而加熱層在每個區域內由於電熱絲分佈不均勻導致每個區域內加熱不均勻，為解決上述問題，習知技術中，主要藉由在加熱絲上面黏貼固體導熱金屬的方式使溫度更加均勻，但是固體導熱金屬的熱導率有限，而且缺乏熱交換，使得加熱層不同部位的溫度不均勻分佈，進而導致基片在對應的區域內溫度分佈不均勻，由於基片上每一點的局部基片溫度和化學反應比率是相互關聯的，如果基片表面的溫度不均勻就會導致附於基片表面上的材料的不均勻蝕刻或沉積，降低基片良品率。The electrostatic chuck is usually located at the bottom of the plasma processing chamber above a pedestal, and generally includes electrodes embedded in a ceramic dielectric layer; by applying direct current to the electrodes, electrostatic charges are generated to hold the dielectric Place the substrate on the layer. A susceptor is provided under the ceramic dielectric layer to support it; a heat exchanger (chiller) is provided in the susceptor, and the heat exchanger is provided with a heating layer, which is used when processing the substrate , The heating layer performs multi-zone temperature control on the electrostatic chuck, so that the temperature of the substrate can be adjusted in different regions, thereby adjusting the uniformity of the substrate etching, and achieving the highest quality output. The heating layer in each area is unevenly heated due to the uneven distribution of the heating wires in each area. In order to solve the above problems, in the prior art, the temperature is made more uniform by pasting solid heat conducting metal on the heating wires. However, the thermal conductivity of the solid thermally conductive metal is limited, and the lack of heat exchange makes the temperature of different parts of the heating layer unevenly distributed, which in turn leads to uneven temperature distribution of the substrate in the corresponding area, due to the local substrate at each point on the substrate The temperature and the chemical reaction ratio are interrelated. If the temperature of the substrate surface is not uniform, it will cause uneven etching or deposition of the material attached to the substrate surface, reducing the yield of the substrate.

本發明的目的在於提供一種電漿處理裝置及用於所述處理裝置的基片支座，藉由在加熱層與靜電吸盤之間設置導熱層，所述導熱層藉由分佈溝槽，並且在溝槽內灌封導熱金屬流體構成；導熱金屬在溝槽內向溫度偏低的區域流動，充分實現區域內的熱對流交換；使得各區域內的局部基片溫度均勻一致，進而提高基片良品率。The object of the present invention is to provide a plasma processing device and a substrate support for the processing device, by disposing a thermally conductive layer between the heating layer and the electrostatic chuck, the thermally conductive layer is distributed through grooves, and The groove is filled with heat-conducting metal fluid; the heat-conducting metal flows to the lower temperature area in the groove, which fully realizes the heat convection exchange in the area; makes the local substrate temperature in each area uniform, thereby improving the quality of the substrate rate.

為了實現以上目的，本發明藉由以下技術手段實現：In order to achieve the above objectives, the present invention is achieved by the following technical means:

如第1圖所示，本實施例提供的一種基片支座，包含：基座，依次設置在所述基座上的加熱層和靜電吸盤，以及設置在所述加熱層和靜電吸盤之間的導熱層；所述靜電吸盤用於夾持基片；所述加熱層用於對置於所述靜電吸盤上的基片進行溫控；所述導熱層包括分佈在所述加熱層上的至少一個溝槽，以及灌封在所述溝槽內的導熱金屬流體；所述導熱金屬的熱導率大於50W/mK；所述導熱金屬流體在所述溝槽內流動，使得基片支座具有均一的溫度。As shown in Figure 1, the substrate support provided by this embodiment includes: a base, a heating layer and an electrostatic chuck arranged on the base in turn, and a heating layer and an electrostatic chuck arranged between the heating layer and the electrostatic chuck The thermal conductive layer; the electrostatic chuck is used to clamp the substrate; the heating layer is used to control the temperature of the substrate placed on the electrostatic chuck; the thermal conductive layer includes at least distributed on the heating layer A groove, and a thermally conductive metal fluid potted in the groove; the thermal conductivity of the thermally conductive metal is greater than 50W/mK; the thermally conductive metal fluid flows in the groove, so that the substrate support has Uniform temperature.

進一步的，所述溝槽由熔點高於所述導熱金屬的金屬材料和/或陶瓷材料製成。Further, the groove is made of a metal material and/or a ceramic material with a higher melting point than the thermally conductive metal.

進一步的，所述導熱金屬的材料為 汞、鈉、鉀、鈣、鋰、鎵、銦、鉍、錫、鉛和銻中的一種或其中的幾種金屬構成的合金。Further, the material of the thermally conductive metal is one of mercury, sodium, potassium, calcium, lithium, gallium, indium, bismuth, tin, lead, and antimony, or an alloy composed of several of them.

進一步的，所述加熱層設有複數個加熱區，每一所述加熱區藉由獨立的控制電源控制加熱，所述導熱層覆蓋所述加熱層。Further, the heating layer is provided with a plurality of heating zones, each of the heating zones is heated by an independent control power source, and the heat conducting layer covers the heating layer.

進一步的，所述加熱層為圓形盤，每一所述加熱區相對於所述圓形盤的中心同心設置於不同的徑向距離。Further, the heating layer is a circular disk, and each of the heating zones is concentrically arranged at a different radial distance relative to the center of the circular disk.

進一步的，所述導熱層包括多個獨立的子導熱區，每個子導熱區與下方的至少一個獨立可控的加熱區位置對應。Further, the heat conduction layer includes a plurality of independent sub heat conduction areas, and each sub heat conduction area corresponds to the position of at least one independently controllable heating area below.

進一步的，所述溝槽為與所述加熱層的中心同心設置的螺旋形或多個環形。Further, the groove has a spiral shape or multiple rings arranged concentrically with the center of the heating layer.

進一步的，所述基座上還設有複數個通孔，所述通孔貫穿所述加熱層，以及位於所述加熱層上的導熱層；所述溝槽不經過所述通孔。Further, the base is further provided with a plurality of through holes, and the through holes penetrate the heating layer and the heat conductive layer on the heating layer; the groove does not pass through the through holes.

另一方面，一種電漿處理裝置，包含：反應腔，設置在所述反應腔內部下方的如上文所述的基片支座。On the other hand, a plasma processing device includes a reaction chamber, and the substrate support as described above is arranged below the inside of the reaction chamber.

本發明與習知技術相比具有以下優點：Compared with the prior art, the present invention has the following advantages:

本發明藉由在加熱層與靜電吸盤之間設置導熱層，所述導熱層藉由分佈溝槽，並且在溝槽內灌封導熱金屬流體構成；導熱金屬在溝槽內向溫度偏低的區域流動，充分實現區域內的熱對流交換；使得各區域內的局部基片溫度更加均勻一致。In the present invention, a heat-conducting layer is arranged between the heating layer and the electrostatic chuck. The heat-conducting layer is formed by distributing grooves and encapsulating a heat-conducting metal fluid in the grooves; the heat-conducting metal is in the grooves to the lower temperature area Flow, fully realize the heat convection exchange in the area; make the local substrate temperature in each area more uniform.

實施例一，結合第1圖和第2圖所示，本發明一種基片支座，包含：基座20，依次設置在所述基座20上的加熱層21和靜電吸盤23，以及設置在所述加熱層21和靜電吸盤23之間的導熱層22；所述靜電吸盤23用於提供支撐基片的支撐面的同時還可以夾持基片；所述靜電吸盤23與導熱層22熱接觸，所述基片與所述靜電吸盤23熱接觸。The first embodiment, as shown in Figure 1 and Figure 2, a substrate support of the present invention includes: a base 20, a heating layer 21 and an electrostatic chuck 23 sequentially arranged on the base 20, and The heat-conducting layer 22 between the heating layer 21 and the electrostatic chuck 23; the electrostatic chuck 23 is used to provide a support surface for supporting the substrate while also clamping the substrate; the electrostatic chuck 23 is in thermal contact with the heat-conducting layer 22 , The substrate is in thermal contact with the electrostatic chuck 23.

所述加熱層21用於對置於所述靜電吸盤23上的基片（第1圖中未示出）進行溫控。所述導熱層22包括分佈在所述加熱層21上的至少一個溝槽220，所述溝槽220沿著單個的平面內的曲折路徑彎曲並且其外圓周為大致的圓形，以及灌封在所述溝槽220內的導熱金屬230流體；所述導熱金屬230流體在所述溝槽220內流動，使得基片支座上的基片具有均一的溫度。具體的，藉由由其中流經的導熱金屬230流體來加熱或冷卻所述靜電吸盤23的溫度，進而控制基片的溫度。The heating layer 21 is used for temperature control of a substrate (not shown in Figure 1) placed on the electrostatic chuck 23. The thermally conductive layer 22 includes at least one groove 220 distributed on the heating layer 21, the groove 220 is curved along a tortuous path in a single plane and its outer circumference is roughly circular, and is potted in The thermally conductive metal 230 fluid in the groove 220; the thermally conductive metal 230 fluid flows in the groove 220 so that the substrate on the substrate holder has a uniform temperature. Specifically, the temperature of the electrostatic chuck 23 is heated or cooled by the thermally conductive metal 230 flowing therethrough, thereby controlling the temperature of the substrate.

所述導熱金屬230的熱導率大於50W/mK 。所述導熱金屬230的材料為汞、鈉、鉀、鈣、鋰、鎵、銦、鉍、錫、鉛和銻中的一種或其中的幾種金屬構成的合金。在本實施例中，所述溝槽220由熔點高於所述導熱金屬230的金屬材料和/或陶瓷材料製成。所述導熱金屬230的熔點≤5℃，當加熱層21根據熱傳遞原理，將其產生的熱量傳遞至所述導熱層22上時，其導熱金屬230的溫度在大於5攝氏度時，所述導熱金屬為液態，具體的，這些所述導熱金屬是相變材料中的一類，其具有穩定的相變溫度，如5℃，當導熱層吸收外部熱量時，這些熱量被所述導熱金屬吸收，導熱金屬吸熱逐漸相變為液態，即變為導熱金屬流體，導熱金屬流體在所述溝槽220內自由流動，在流動至溫度較高或較低的區域時，產生熱交換，進而使得導熱金屬流體本身具有均勻一致的溫度，使得整個導熱層22具有均勻一致的溫度，進而使得靜電吸盤23具有均勻一致的溫度，使得與所述靜電吸盤23熱接觸的基片具有均勻一致的溫度，提高基片良品率。The thermal conductivity of the thermally conductive metal 230 is greater than 50 W/mK. The material of the thermally conductive metal 230 is one of mercury, sodium, potassium, calcium, lithium, gallium, indium, bismuth, tin, lead, and antimony or an alloy composed of several of them. In this embodiment, the groove 220 is made of a metal material and/or a ceramic material with a higher melting point than the thermally conductive metal 230. The melting point of the thermally conductive metal 230 is less than or equal to 5°C. When the heating layer 21 transfers the heat generated by it to the thermally conductive layer 22 according to the principle of heat transfer, when the temperature of the thermally conductive metal 230 is greater than 5°C, the thermally conductive The metal is liquid. Specifically, these thermally conductive metals are a type of phase change material, which has a stable phase change temperature, such as 5°C. When the thermally conductive layer absorbs external heat, the heat is absorbed by the thermally conductive metal and conducts heat. The heat absorption of the metal gradually transforms into a liquid phase, that is, it becomes a heat-conducting metal fluid. The heat-conducting metal fluid flows freely in the groove 220. When it flows to a region with a higher or lower temperature, heat exchange occurs, thereby making the heat-conducting metal fluid It has a uniform temperature, so that the entire thermal conductive layer 22 has a uniform temperature, thereby making the electrostatic chuck 23 have a uniform temperature, so that the substrate thermally in contact with the electrostatic chuck 23 has a uniform temperature, which improves the substrate Yield rate.

因此，其可以在溝槽220內自由流動，將其具有的熱量與熱量較低的區域進行熱交換，達到使得基片支座上的基片具有均一的溫度的目的。Therefore, it can flow freely in the groove 220 and exchange the heat with the area with lower heat to achieve the purpose of making the substrate on the substrate support have a uniform temperature.

所述加熱層21設有複數個加熱區，每一所述加熱區藉由獨立的控制電源控制加熱。所述加熱層21為圓形盤，每一所述加熱區相對於所述圓形盤的中心同心設置於不同的徑向距離。所述加熱區採用螺旋狀或圓環形排布的加熱絲構成。每一所述加熱絲的各個曲線段的邊緣或側邊相互不接觸，各個曲線段之間的間距大致均勻，且與其他加熱區域的加熱片也不接觸。所述導熱層覆蓋所述加熱層21。在本實施例中，所述加熱層21與所述導熱層22之間還設有絕緣層。The heating layer 21 is provided with a plurality of heating zones, and each heating zone is heated by an independent control power source. The heating layer 21 is a circular disk, and each heating zone is concentrically arranged at a different radial distance with respect to the center of the circular disk. The heating zone is composed of heating wires arranged in a spiral or circular shape. The edges or sides of the various curved sections of each heating wire are not in contact with each other, the spacing between the various curved sections is approximately uniform, and is not in contact with the heating plates of other heating regions. The heat conductive layer covers the heating layer 21. In this embodiment, an insulating layer is further provided between the heating layer 21 and the heat conducting layer 22.

所述加熱層21上還包括一冷卻管道，其沿著單個的平面內的曲折路徑彎曲並且其內與外圓周為大致的圓形，且至少包括一個流體入口通道和一個流體出口通道，流體入口通道和流體出口通道間連接一流體源，所述流體源可以控制所述流體的溫度和流體進出加熱層的速率。加熱層用來冷卻靜電吸盤時，入口通道處流體溫度較低，加熱層由於對靜電吸盤進行冷卻，內部流體不斷吸收靜電吸盤上的熱量，流體溫度不斷升高，至出口通道處時，流體溫度通常會大大高於入口通道處溫度，從而降低該處對靜電吸盤的冷卻效果。The heating layer 21 also includes a cooling pipe, which is curved along a tortuous path in a single plane and whose inner and outer circumferences are roughly circular, and includes at least one fluid inlet channel and one fluid outlet channel. A fluid source is connected between the channel and the fluid outlet channel, and the fluid source can control the temperature of the fluid and the rate at which the fluid enters and exits the heating layer. When the heating layer is used to cool the electrostatic chuck, the fluid temperature at the inlet channel is relatively low. As the heating layer cools the electrostatic chuck, the internal fluid continuously absorbs heat from the electrostatic chuck, and the fluid temperature keeps rising. When it reaches the outlet channel, the fluid temperature It is usually much higher than the temperature at the entrance channel, thereby reducing the cooling effect of the electrostatic chuck.

所述溝槽220為與所述加熱層21的中心同心設置的螺旋形，其沿著單個的平面內的曲折路徑彎曲並且其內與外圓周為大致的圓形。The groove 220 has a spiral shape concentrically arranged with the center of the heating layer 21, which is curved along a tortuous path in a single plane, and its inner and outer circumferences are approximately circular.

上述基座20由金屬製成，所述基座20連接到射頻電源24，射頻電源24輸出的射頻功率輸入到反應腔，使得基座20上方產生電漿並對基片進行電漿處理。The base 20 is made of metal, and the base 20 is connected to a radio frequency power supply 24, and the radio frequency power output by the radio frequency power supply 24 is input to the reaction chamber, so that plasma is generated above the base 20 and the substrate is subjected to plasma processing.

實施例二，將實施例一中的溝槽設置為多個環形溝槽，其他不變。所述多個環形分佈在各個所述熱交換器的加熱層21上。每一環形溝槽相對於圓形盤的加熱層21的中心同心設置於不同的徑向距離。各個環形溝槽之間設有連通通道，使得導熱金屬20流體可以在各個環形溝槽內自由流動，使得導熱層的各個區域具有均勻一致的溫度，進而使得與其熱接觸對的靜電吸盤23的各個區域具有均勻一致的溫度，從而有助於使得置於所述靜電吸盤23上的基片具有均勻一致的溫度，提高基片良率。In the second embodiment, the groove in the first embodiment is set as a plurality of annular grooves, and the others remain unchanged. The plurality of rings are distributed on the heating layer 21 of each heat exchanger. Each annular groove is concentrically arranged at a different radial distance relative to the center of the heating layer 21 of the circular disk. A communication channel is provided between each annular groove, so that the heat-conducting metal 20 fluid can flow freely in each annular groove, so that each area of the heat-conducting layer has a uniform temperature, thereby making each of the electrostatic chuck 23 that are in thermal contact with it The area has a uniform temperature, which helps to make the substrate placed on the electrostatic chuck 23 have a uniform temperature and improve the yield of the substrate.

實施例三，所述溝槽可以單獨設置在所述加熱層21的各個加熱區內，各個加熱區之間的溝槽之間可以不連通，因此實現對所述基片進行分區域溫控的目的，且由於所述導熱金屬流體可以在其對應的所述溝槽內進行自由流動，使得各個加熱區內的溫度均勻一致。In the third embodiment, the grooves may be separately arranged in each heating zone of the heating layer 21, and the grooves between the heating zones may not communicate with each other, thus realizing regional temperature control of the substrate Purpose, and because the heat-conducting metal fluid can flow freely in the corresponding grooves, so that the temperature in each heating zone is uniform.

進一步的，所述基座20上還設有複數個通孔（第1圖中未示出），所述通孔貫穿所述加熱層21，以及位於所述加熱層21上的導熱層22。所述通孔包括但不限於：頂升裝置（第1圖中未示出）頂杆穿過的通孔，測溫裝置（第1圖中未示出）的電線穿過的通孔以及其他通氣孔等。所述頂升裝置用於控制所述基片支座縱向高度，所述測溫裝置用於對所述加熱層21和/或導熱層的溫度進行測量。由此，上述實施例一~實施例三中的所述溝槽不經過上述複數個通孔。Furthermore, the base 20 is further provided with a plurality of through holes (not shown in the first figure), and the through holes penetrate the heating layer 21 and the heat conducting layer 22 on the heating layer 21. The through holes include but are not limited to: through holes through which the jack rod of the jacking device (not shown in Figure 1) passes, through holes through which the wires of the temperature measuring device (not shown in Figure 1) pass, and others Vents and so on. The lifting device is used to control the longitudinal height of the substrate support, and the temperature measuring device is used to measure the temperature of the heating layer 21 and/or the heat conducting layer. Therefore, the grooves in the first to third embodiments above do not pass through the plurality of through holes.

另一方面，如第1圖所示，本發明還公開了一種電漿處理裝置，包含：反應腔10，設置在所述反應腔內部下方的如上文所述的基片支座。On the other hand, as shown in FIG. 1, the present invention also discloses a plasma processing device, which includes a reaction chamber 10, and the substrate support as described above is arranged below the reaction chamber.

具體的，電漿處理裝置包括可以抽真空的反應腔10，反應腔包括側壁以及底壁，整個反應腔10都由金屬製成且接地，實現對射頻電磁場的屏蔽與氣密。反應腔內底部包括基片支座的靜電吸盤23用於支撐待處理的基片（晶圓），基片支座的基座20同時作為下電極連接到下方的至少一個射頻電源24。射頻電源24也可以設置多個。射頻電源24輸出的射頻頻率可以是2MHz或13MHz或者60MHz，可以根據電漿濃度和離子濃度的需要調節射頻電源輸出到下電極的功率。若所述電漿處理裝置為電容耦合電漿(CCP)處理裝置時，其反應腔10中與基片支座相對的反應腔上方包括上電極（第1圖中未示出），上電極中還整合了反應氣體進氣裝置連接到氣源，用於均勻輸入反應氣體到下方的基片。若所述電漿處理裝置為電感耦合電漿（ICP）處理裝置時，所述反應腔10頂部不需要設置上電極，代之以一個電感線圈（第1圖中未示出）設置在反應腔10頂蓋上方，一個射頻電源連接到所述電感線圈，線圈產生的電磁場穿過反應腔頂蓋進入反應腔10內形成電漿。基片支座上方還設置有邊緣環（liner），所述邊緣環圍繞靜電夾盤和待處理基片，實現對基片邊緣區域電場和氣流和溫度的調節。Specifically, the plasma processing device includes a reaction chamber 10 that can be evacuated. The reaction chamber includes a side wall and a bottom wall. The entire reaction chamber 10 is made of metal and grounded, so as to achieve shielding and airtightness of the radio frequency electromagnetic field. An electrostatic chuck 23 with a substrate support at the bottom of the reaction chamber is used to support the substrate (wafer) to be processed, and the susceptor 20 of the substrate support is simultaneously connected to at least one radio frequency power supply 24 below as a lower electrode. Multiple radio frequency power supplies 24 can also be provided. The radio frequency output by the radio frequency power supply 24 may be 2 MHz, 13 MHz or 60 MHz, and the power output from the radio frequency power supply to the lower electrode can be adjusted according to the needs of plasma concentration and ion concentration. If the plasma processing device is a capacitively coupled plasma (CCP) processing device, the upper electrode of the reaction chamber opposite to the substrate support in the reaction chamber 10 (not shown in Figure 1) is included in the upper electrode It also integrates a reaction gas inlet device connected to the gas source for uniformly inputting reaction gas to the substrate below. If the plasma processing device is an inductively coupled plasma (ICP) processing device, there is no need to provide an upper electrode on the top of the reaction chamber 10, instead an inductive coil (not shown in Figure 1) is provided in the reaction chamber Above the top cover 10, a radio frequency power supply is connected to the inductor coil, and the electromagnetic field generated by the coil passes through the top cover of the reaction chamber and enters the reaction chamber 10 to form plasma. An edge ring (liner) is also arranged above the substrate support, and the edge ring surrounds the electrostatic chuck and the substrate to be processed to realize the regulation of the electric field, air flow and temperature in the edge area of the substrate.

綜上所述，本發明藉由在所述基片支座上的加熱層21和靜電吸盤之間設置導熱層，所述導熱層覆蓋所述加熱層21，所述導熱層設有分佈在所述加熱層21上的溝槽，以及灌封在所述溝槽內的導熱金屬流體。所述導熱金屬流體在所述溝槽內自由流動，在流動至溫度較高或較低的區域時，產生熱交換，進而使得導熱金屬流體本身具有均勻一致的溫度，使得整個導熱層具有均勻一致的溫度，進而使得靜電吸盤具有均勻一致的溫度，使得與所述靜電吸盤熱接觸的基片具有均勻一致的溫度，提高基片良品率。In summary, in the present invention, a thermal conductive layer is provided between the heating layer 21 on the substrate support and the electrostatic chuck, the thermal conductive layer covers the heating layer 21, and the thermal conductive layer is provided with The groove on the heating layer 21, and the thermal conductive metal fluid potted in the groove. The heat-conducting metal fluid flows freely in the grooves, and when it flows to areas with higher or lower temperatures, heat exchange occurs, so that the heat-conducting metal fluid itself has a uniform temperature, so that the entire heat-conducting layer has a uniform Therefore, the electrostatic chuck has a uniform temperature, so that the substrate in thermal contact with the electrostatic chuck has a uniform temperature, and the yield rate of the substrate is improved.

在部分處理製程中，由於電漿分佈、氣流/自由基分佈不均等原因，導致需要基片溫度的反向分佈來抵消上述不均一性，所以需要使得基本上不同區域具有可控的溫度分佈。本發明中的導熱層也可以分隔成多個獨立的子導熱區，每個子導熱區內也是包括溝槽和相應的導熱金屬流體，這些子導熱區域下方的多個獨立加熱區中的每一個加熱區分別對應。這樣加熱器中層藉由加熱器獲得不同的加熱功率分佈，再藉由上方的每個子導熱層實現每個小區域內的溫度分佈均勻，最終實現在整個基片上獲得均一的處理效果。In some processing processes, due to the uneven distribution of plasma, air flow/radicals, etc., it is necessary to reverse the substrate temperature distribution to offset the above-mentioned inhomogeneity. Therefore, it is necessary to make basically different regions have a controllable temperature distribution. The thermally conductive layer in the present invention can also be divided into a plurality of independent sub-heat-conducting areas, each sub-heat-conducting area also includes a groove and a corresponding heat-conducting metal fluid, each of the multiple independent heating areas below these sub-heat-conducting areas heats The districts correspond respectively. In this way, the middle layer of the heater obtains different heating power distributions by the heater, and then the temperature distribution in each small area is achieved by each sub-heat-conducting layer above, and finally a uniform processing effect is obtained on the entire substrate.

儘管本發明的內容已經藉由上述較佳實施例作了詳細介紹，但應當認識到上述的描述不應被認為是對本發明的限制。在所屬技術領域具有通常知識者閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由所附的申請專利範圍來限定。Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and substitutions to the present invention will be obvious after reading the above content by those with ordinary knowledge in the technical field. Therefore, the scope of protection of the present invention should be limited by the scope of the attached patent application.

10:反應腔 20:基座 21:加熱層 22:導熱層 23:靜電吸盤 24:射頻電源 220:溝槽 230:導熱金屬10: Reaction chamber 20: Pedestal 21: Heating layer 22: Thermal conductive layer 23: Electrostatic chuck 24: RF power supply 220: groove 230: Thermally conductive metal

第1圖為本發明一實施例提供的一種電漿處理裝置的結構示意圖； 第2圖為本發明一實施例提供的一種電漿處理裝置的基片支座的結構示意圖。Figure 1 is a schematic structural diagram of a plasma processing device provided by an embodiment of the present invention; FIG. 2 is a schematic structural diagram of a substrate support of a plasma processing apparatus according to an embodiment of the present invention.

220:溝槽 220: groove

230:導熱金屬 230: Thermally conductive metal

Claims (9)

一種基片支座，其包含：一基座，依次設置在該基座上的一加熱層和一靜電吸盤，以及設置在該加熱層和該靜電吸盤之間的一導熱層； 該加熱層用於對置於該靜電吸盤上的一基片進行溫控； 該導熱層包括分佈在該加熱層上的至少一個溝槽，以及灌封在該溝槽內的一導熱金屬流體，該導熱金屬的熱導率大於50W/mK；該導熱金屬流體在該溝槽內流動，使得該基片支座具有均一的溫度。A substrate support, comprising: a base, a heating layer and an electrostatic chuck arranged on the base in turn, and a heat conducting layer arranged between the heating layer and the electrostatic chuck; The heating layer is used for temperature control of a substrate placed on the electrostatic chuck; The heat-conducting layer includes at least one groove distributed on the heating layer, and a heat-conducting metal fluid potted in the groove. The heat-conducting metal has a thermal conductivity greater than 50W/mK; the heat-conducting metal fluid is in the groove. Internal flow, so that the substrate support has a uniform temperature. 如申請專利範圍第1項所述的基片支座，其中該溝槽由熔點高於該導熱金屬的金屬材料和/或陶瓷材料製成。The substrate support according to item 1 of the scope of patent application, wherein the groove is made of a metal material and/or a ceramic material having a higher melting point than the thermally conductive metal. 如申請專利範圍第1項所述的基片支座，其中該導熱金屬的材料為汞、鈉、鉀、鈣、鋰、鎵、銦、鉍、錫、鉛和銻中的一種或多種金屬構成的合金。The substrate support according to item 1 of the scope of patent application, wherein the material of the thermally conductive metal is composed of one or more metals of mercury, sodium, potassium, calcium, lithium, gallium, indium, bismuth, tin, lead and antimony Alloy. 如申請專利範圍第1項所述的基片支座，其中該加熱層設有複數個加熱區，該複數個加熱區中的每一個藉由獨立的控制電源控制加熱，該導熱層覆蓋該加熱層。The substrate support as described in item 1 of the scope of patent application, wherein the heating layer is provided with a plurality of heating areas, each of the plurality of heating areas is heated by an independent control power source, and the heat conducting layer covers the heating Floor. 申請專利範圍第4項所述的基片支座，其中該加熱層為一圓形盤，該複數個加熱區中的每一個相對於該圓形盤的中心同心設置於不同的徑向距離。The substrate support according to item 4 of the scope of patent application, wherein the heating layer is a circular disk, and each of the plurality of heating zones is concentrically arranged at a different radial distance with respect to the center of the circular disk. 如申請專利範圍第5項所述的基片支座，其中該導熱層包括獨立的複數個子導熱區，該複數個子導熱區中的每一個與下方的至少一個獨立可控的該加熱區位置對應。The substrate support according to item 5 of the scope of patent application, wherein the thermally conductive layer includes a plurality of independent sub-heat-conducting areas, and each of the plurality of sub-heat-conducting areas corresponds to at least one independently controllable position of the heating area below . 如申請專利範圍第6項所述的基片支座，其中該溝槽為與該加熱層的中心同心設置的螺旋形或多個環形。According to the substrate support described in item 6 of the scope of patent application, the groove is a spiral shape or multiple rings arranged concentrically with the center of the heating layer. 如申請專利範圍第1項至第7項中任一項所述的基片支座，其中該基座上進一步設有複數個通孔，該複數個通孔貫穿該加熱層，以及位於該加熱層上的該導熱層；該溝槽不經過該通孔。The substrate support according to any one of items 1 to 7 of the scope of the patent application, wherein the base is further provided with a plurality of through holes, the plurality of through holes penetrate the heating layer, and are located in the heating layer. Layer on the thermally conductive layer; the trench does not pass through the through hole. 一種電漿處理裝置，其包含： 一反應腔，設置在該反應腔內部下方的如申請專利範圍第1項至第9項中任一項所述的該基片支座。A plasma processing device, which comprises: A reaction chamber, and the substrate support as described in any one of items 1 to 9 of the scope of patent application is arranged below the inside of the reaction cavity.
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