CN108257839B - A kind of reaction chamber for wafer-process - Google Patents
A kind of reaction chamber for wafer-process Download PDFInfo
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- CN108257839B CN108257839B CN201611245188.1A CN201611245188A CN108257839B CN 108257839 B CN108257839 B CN 108257839B CN 201611245188 A CN201611245188 A CN 201611245188A CN 108257839 B CN108257839 B CN 108257839B
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- pedestal
- reaction chamber
- cooling liquid
- liquid container
- heat
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
Abstract
The present invention provides a kind of reaction chamber for wafer-process, includes that a pedestal is used to support wafer to be processed in reaction chamber, includes at least one heat exchanging pipe for being used for coolant flow in pedestal, the heat exchanging pipe includes an arrival end and one outlet end；One base-plate temp control system includes a cooling liquid container, cooling liquid container includes an output end, the output end is connected to the arrival end of the heat exchanging pipe by the first coolant delivery pipeline, and the outlet end of the heat exchanging pipe is connected to the reflux end of cooling liquid container by the second coolant delivery pipeline.The accumulation of heat mixed liquor with preset temperature is accommodated in the cooling liquid container, the phase-change material micro-capsule for including coolant liquid in the accumulation of heat mixed liquor and being suspended in coolant liquid, the diameter of the microcapsules is 1-500um, and the accumulation of heat mixed liquor flows through the heat exchanging pipe and the pedestal is made to have uniform temperature.
Description
Technical field
The present invention relates to semiconductor processing technology fields, and in particular to a kind of wafer-process reaction chamber enables to wafer
Installation pedestal has uniform temperature.
Background technique
Plasma treatment appts are widely used in semiconductor crystal wafer working process process, are as shown in Figure 1 typical
Plasma treatment appts structure chart.Plasma treatment appts include the reaction chamber 100 that can be vacuumized, reaction chamber include side wall with
And bottom wall, entire reaction chamber 100 are all formed from metal and are grounded, realize to the shielding of radio frequency electromagnetic field with it is airtight.In reaction chamber
Bottom includes that pedestal 22 is used to support wafer to be processed, and pedestal is connected at least one radio frequency of lower section as lower electrode simultaneously
Power supply.Radio-frequency power supply also can be set multiple, for example the first radio-frequency power supply 31 is connected to pedestal 22 by adaptation 1, and second penetrates
Frequency power 32 is connected to pedestal 22 by adaptation 2.Radio-frequency power supply output rf frequency can be 2MHz or 13MHz or
60MHz, can be according to the power for needing to adjust radio-frequency power supply and being output to lower electrode of plasma concentration and ion concentration.Pedestal 22
Top further includes an electrostatic chuck 21, passes through the fixed wafer 20 to be processed of electrostatic chuck 21.At capacitiveiy coupled plasma (CCP)
Include top electrode 11 above the reaction chamber opposite with pedestal in reaction chamber, is also integrated with reaction gas inlet duct in top electrode 11
It is connected to gas source 110, the wafer for uniformly inputting reaction gas to lower section.On inductively coupled plasma (ICP) reaction chamber top
Portion does not need setting top electrode, and instead an inductance coil is arranged above reaction chamber top cover, and a radio-frequency power supply is connected to
The inductance coil, the electromagnetic field that coil generates pass through reaction chamber top cover and enter formation plasma in reaction chamber 100.On pedestal 22
Side is additionally provided with edge ring 10, which surrounds electrostatic chuck and wafer to be processed 20, realizes to crystal round fringes region electricity
The adjusting of field and air-flow and temperature.
Fig. 2 is the temperature control system schematic diagram of pedestal in the prior art, and pedestal 22 is provided with heat exchanging pipe in figure
220, pipeline includes arrival end 220b and outlet end 220a.Base-plate temp control system further includes cooling liquid container 31 and transfer valve
Door V1, the coolant liquid 30 with set temperature are admitted to arrival end 220b by valve V1, then pass through valve from outlet end 220a
Door V3 is flowed back into cooling liquid container 31, by controlling the temperature of coolant liquid 30 in cooling liquid container 31 and flowing into the cold of pedestal 22
But flow quantity controls the temperature of pedestal, finally make pedestal 22 have stablize, controllable temperature.Since heat is handed in actual use
Pipeline 220 is changed with very long length, coolant liquid has lower temperature when entering arrival end 220b, as coolant liquid is in pipe
The heat being passed on gradually extraction duct wall is flowed in road, finally can be much higher than arrival end from the temperature that outlet end 220a flows out
Temperature, so the actual Temperature Distribution of pedestal can be influenced by coolant pipe road length, distribution.Meanwhile coolant liquid 30 is from cooling
Liquid container 31 outlet outflow, by valve V1 reach entrance 220b during actually be also with ambient atmosphere space into
The exchange of row heat, the temperature of coolant liquid 30 can also shift with design requirement.So base-plate temp controls in the prior art
System can not obtain uniform Temperature Distribution in entire pedestal upper surface, be unable to satisfy the higher and higher work of temperature uniformity requirement
Skill demand.
So needing to develop the new device of one kind in the industry can either realize that the temperature of base interior different parts is uniformly distributed,
Also it can guarantee that temperature does not shift in the transmission process from cooling liquid container to pedestal.
Summary of the invention
The present invention discloses a kind of reaction chamber for wafer-process, and the reaction chamber includes reaction cavity, and reaction cavity is
The air tight housing constituted is surrounded by side wall and top cover, bottom wall, includes that a pedestal is used to support wafer to be processed, base in reaction chamber
It include at least one heat exchanging pipe for being used for coolant flow in seat, the heat exchanging pipe includes an arrival end and one
Outlet end；One base-plate temp control system is used to control the temperature of pedestal, and base-plate temp control system includes a coolant liquid
Container, cooling liquid container include an output end, and the output end is connected to the heat by the first coolant delivery pipeline and hands over
The arrival end of pipeline is changed, the outlet end of the heat exchanging pipe is connected to cooling liquid container by the second coolant delivery pipeline
Reflux end, which is characterized in that the accumulation of heat mixed liquor with preset temperature, the accumulation of heat mixing are accommodated in the cooling liquid container
The phase-change material micro-capsule for including coolant liquid in liquid and being suspended in coolant liquid, the diameter of the microcapsules is 1-500um, described
Accumulation of heat mixed liquor flows through the heat exchanging pipe and the pedestal is made to have uniform temperature.
Wherein pedestal is made of metal in reaction chamber, and the pedestal is connected to radio-frequency power supply, the radio frequency of radio-frequency power supply output
Power input is to reaction chamber, so that generating plasma above pedestal and carrying out plasma treatment to wafer.At the top of reaction chamber also
Including inlet duct for inputting reaction gas, the reaction gas reacts on the wafer forms chemical vapor deposition material
Layer.The coolant liquid is the conductive fluid of electrical isolation, and further, coolant liquid can be Galden liquid.
It is wherein single phase-change material in phase-change material micro-capsule, the preset temperature of the accumulation of heat mixed liquor is phase-change material
The fusing point of phase-change material in microcapsules.It also may include a variety of phase-change materials, every kind of phase-change material tool in phase-change material micro-capsule
There is respective fusing point.
The present invention also provides a kind of second embodiment of reaction chamber for wafer-process, the reaction chamber includes reaction
Cavity, reaction cavity are to surround the air tight housing constituted by side wall and top cover, bottom wall, include a pedestal in reaction chamber for branch
Wafer to be processed is supportted, includes at least one heat exchanging pipe for being used for coolant flow in pedestal, the heat exchanging pipe includes
One arrival end and one outlet end；One base-plate temp control system is used to control the temperature of pedestal, base-plate temp control system
System includes the first and second cooling liquid containers, and each cooling liquid container includes a upper output terminal and a lower output side,
It further include a microcapsules strainer in each cooling liquid container, the microcapsules strainer expand microcapsules can only below strainer
It dissipates, the upper output terminal is located above strainer, and lower output side is located at below strainer, and each cooling liquid container further includes one
Input terminal is located at below strainer；Contain the first accumulation of heat mixed liquor in first cooling liquid container, contains in the second cooling liquid container
There is the second accumulation of heat mixed liquor；The top of first, second cooling liquid container, lower output side are conveyed by multiple valves and coolant liquid
Pipeline is connected to the arrival end of the pedestal heat exchanging pipe, and the input terminal of the first, second cooling liquid container passes through at least one
Valve and coolant delivery pipeline are connected to the outlet end of the pedestal heat exchanging pipe.
The reaction chamber of the second embodiment can use method control as follows: the temperature of the pedestal is in three phases
Variation, the first cooling liquid container exports the first accumulation of heat mixed liquor of the first temperature to pedestal from lower output side in the first stage,
Stablize pedestal in first temperature；In second stage, carries out the switching of accumulation of heat mixed liquor: stopping the first coolant liquid in the first step
The output of first accumulation of heat mixed liquor of lower vessel portion output end, while the second temperature of upper output terminal output of the second cooling liquid container
For the coolant liquid of degree to pedestal heat exchanging pipe arrival end, the outlet end of pedestal heat exchanging pipe exports coolant liquid to the first coolant liquid
The input terminal of container has been washed until the microcapsules in pedestal；After having washed away the microcapsules in the first accumulation of heat mixed liquor, stop
The output of second cooling liquid container upper output terminal；The second cooling liquid container exports second temperature from lower output side in phase III
The second accumulation of heat mixed liquor to pedestal, while to flow back into second cold for the accumulation of heat mixed liquor of the outlet end output of pedestal heat exchanging pipe
But the input terminal of liquid container stablizes pedestal in the second temperature.The wherein phase-change material in the phase-change material micro-capsule
For paraffin.
Detailed description of the invention
Fig. 1 is prior art plasma treatment appts schematic diagram；
Fig. 2 is prior art base-plate temp control system schematic diagram；
Fig. 3 is base-plate temp control system schematic diagram of the present invention；
Fig. 4 is the present invention and prior art temperature control system temperature transition process schematic.
Specific embodiment
Below in conjunction with attached drawing 2, specific embodiments of the present invention are further illustrated.The invention discloses a kind of new coolant liquids
Temperature control system for pedestal in plasm reaction cavity.In the prior art, it is passed through the radio frequency energy of pedestal 22 in order to prevent
Amount leaks into external environment by coolant delivery pipeline, so coolant liquid uses the liquid with insulation characterisitic, typically
Galden liquid is also possible to the liquid of other electrical isolations.Since continuous and pedestal carries out heat exchange, coolant temperature gradually becomes
Change not can guarantee coolant duct entrance to export between temperature it is uniform.The present invention proposes a kind of accumulation of heat coolant liquid, the storage
Liquid cooled heat main body is still traditional coolant liquid such as Galden liquid, but large quantity of micro-capsule is suspended in coolant liquid, micro- glue
Intracapsular portion is enclosed with phase-change material, these phase-change materials have stable phase transition temperature, such as 20 degree, outside accumulation of heat coolant liquid absorbs
When portion's heat, these heats are absorbed by the phase-change material in microcapsules, and phase-change material heat absorption gradually mutually becomes liquid, but entire
The temperature of phase-change material particle is invariable.Due to being largely suspended with phase-change material micro-capsule in coolant liquid, so cooling liquid stream
The phase transformation of phase-change material in these microcapsules can only be caused during dynamic from the heat that coolant duct wall is passed to accumulation of heat coolant liquid,
Significant change will not occur for the temperature of whole coolant liquid.Finally heat exchanging pipe arrival end 220b is exported to from cooling liquid container 31
Apparent temperature will not be occurred and become until flowing back to cooling liquid container 31, accumulation of heat coolant liquid by arriving heat exchanging pipe outlet end 220a again
Change.So having uniform Temperature Distribution in pedestal 22, do not influenced by factors such as duct length, pipeline space arrangements.Its
The diameter of middle phase-change material micro-capsule can be 1um-500um etc., and phase-change material can choose organic compound, as long as this has
The fusing point of machine compound is that the temperature range needed for plasma treatment process just can apply to occasion of the present invention, such as 20-80 degree.
Phase-change material most typically, cost it is minimum be paraffin, paraffin is mixed there are many linear paraffin, wherein the alkane of short chain is such as
The fusing point of C16H34 is 16.7 degree, and the fusing point of C21H44 is 44 degree, and the fusing point of the alkane of long-chain such as C30H62 is 65 degree, so this
The composition range that phase-change material in invention can choose is very wide, need according to specific plasma treatment process need to select it is excellent
Change.For example it can choose the corresponding base-plate temp of the technique such as 21 when plasma treatment appts only run same technique for a long time
Degree, the corresponding main component that can choose is C17H36 (21.4 degree of fusing point) as phase-change material.When plasma treatment process needs
When changing within the scope of different temperatures, the material with different melting points can be mixed into.As the temperature rises, this mixing
Different materials gradually melt in the phase-change microcapsule of material.For example plasma treatment process needs change between 21-65 degree, base
The temperature that cooling liquid container 31 in seat temperature control system initially exports can be 20 degree or so, by the heat exchange in pedestal
Only have the phase-change material that fusing point is 21 degree to melt after pipeline 220, it is other to absorb thermal temperature with more dystectic material and do not have
It changes, similarly when needing work at 65 degree, cooling liquid container 31 needs to input big calorimetric to accumulation of heat mixed liquor 30, defeated
It send heat in the process gradually all to melt the material of low melting point, accumulation of heat mixed liquor 30 is sent into base again until reaching 65 degree or so
Heat exchange is carried out in seat 22.This phase-change material capsule being made of combined phase-change material, which is also able to achieve on pedestal, to be had uniformly
Temperature, so also can be realized the object of the invention.But this combined phase-change material also has some drawbacks, in pedestal 22
Actually only have a kind of phase-change material of ingredient carrying out decalescence in flow process, remaining is not the phase-change material of this fusing point
Ingredient all becomes solid-state or liquid, so this combined phase-change material only has some materials to have heat storage capacity, phase
Deficiency more obvious than homogenous material heat storage capacity, for needing for high-power plasma process, it is possible to accumulation of heat mixing occur
Liquid when not flowing out outlet end 220a also effective phase-change material all undergo phase transition, can not be again by decalescence and maintaining
The temperature of microcapsules, at this moment the temperature of outlet end 220a can be higher than the temperature 220b of arrival end.On the other hand, this combined phase-change
The material for all becoming solid in material can obstruct heat outside effective phase-change material and microcapsules between coolant solutions
Conduction path is measured, the heat storage capacity of accumulation of heat mixed liquor can be also obviously reduced in this.Fast-changing occasion is needed in technological temperature, is led to
The quick heating of supercooling liquid container 31 or heat dissipation realization accumulation of heat mixed liquor quickly change difficult to realize, a large amount of accumulation of heats in container 31
Mixed liquor heating needs to heat in itself, while additional phase transformation institute calorific requirement will also synchronize input, so this accumulation of heat mixed liquor
The heat that degree needs from 20 to 60 can be higher than traditional coolant liquid, and whole phase-change materials complete phase transformation and need Time Transmission hot
Measure each microcapsules being suspended in coolant liquid.Quick heat storage mixed liquor in short time will need powerful add
Heat or radiator do not have economic value.
In order to which preferably adapt to be switched fast between two technological temperatures applies needs, the present invention provides such as Fig. 3
Shown in another embodiment.Base-plate temp control system shown in Fig. 3 compared to Figure 1 include two cooling liquid containers 31,
41 and the corresponding valve V1, V2 of two containers, shared valve V3.Simultaneously in above-mentioned cooling liquid container 31,41 in
Top is also provided with phase-change material micro-capsule strainer F1, F2, coolant liquid can only be allowed to circulate above and below strainer, the micro- glue of phase-change material
Capsule can not pass through.Container 31,41 is divided into the pure cooling liquid zone in top and lower part coolant liquid by above-mentioned two microcapsules strainer F1, F2
With the mixed zone of phase-change material micro-capsule, upper and lower two include that a liquid outlet is connected to corresponding valve V1, V2
Contain a large amount of first phase-change material micro-capsules in the first accumulation of heat mixed liquor 30 stored in cooling liquid container 31, first
The second accumulation of heat mixed liquor 40 that phase-change material fusing point in phase-change material micro-capsule stores in 20 degree, cooling liquid container 41 contains
A large amount of second phase-change material micro-capsules, the fusing point of phase-change material is at 60 degree.During the work time cooling liquid container by heating/
The mechanism of heat dissipation makes the first accumulation of heat mixed liquor 30 be maintained at 20 degree, and the second accumulation of heat mixed liquor 40 is maintained at 60 degree.At first
The temperature for needing to make pedestal that there are 20 degree in science and engineering skill, so 31 lower part outlet of cooling liquid container passes through the valve V1 opened and flows into
Heat exchanging pipe in pedestal 22 so that pedestal be maintained at 20 degree it is invariable.
When plasma treatment appts need to run second processing technique, pedestal 22 needs to be quickly transferred to 60 degree, needs
One accumulation of heat mixed liquor handoff procedure.Two steps are included at least in accumulation of heat mixed liquor handoff procedure, step 1: will cool down first
The pure coolant liquid with 60 degree of temperature on 41 top of liquid container is conveyed into pedestal interior conduit 220 by valve V2, in heating pedestal
To remain in base tubing 220 while 22, there is the first phase-change material micro-capsule particle to wash away out.It washes away out
First phase-change material micro-capsule with carried out with pedestal the coolant liquid after heat exchange flow through valve V3 reach cooling liquid container 31
Lower part, such first phase-change material micro-capsule realizes effective recycling, avoids the phase-change material micro-capsule hair of different melting points
It can not be separated after raw mixing.Step 2: the mechanism of subsequent control valve V2 stops exporting cooling from the top of cooling liquid container 41
Liquid is changed to export the second accumulation of heat liquid for being mixed with the second phase-change material micro-capsule to pedestal 22, directly from the lower part of cooling liquid container
Reach 60 degree of target temperature to base-plate temp, then carries out second processing technique.Fig. 4 show above-mentioned accumulation of heat mixed liquor and switched
Temperature variation curve in journey is heated using pure coolant liquid same as the prior art in step 1, thus its temperature curve with it is existing
Technology is overlapped, and the present invention is changed to the second accumulation of heat mixed liquor and is transported to pedestal in step 2, wherein the heat accumulated can guarantee the
Two accumulation of heat mixed liquors remain at 60 degree in entire circuit, quick heating pedestal.The prior art is since pure coolant liquid is in base
Heat is constantly taken away by pedestal 22 in flow process in the pipeline of seat 22, so coolant temperature constantly reduces, arrives outlet end
Temperature when temperature is significantly lower than arrival end 220b when 220a, so the speed of prior art heating pedestal is significantly lower than this hair
Bright, for final temperature curve as shown in dotted portion in Fig. 4, prior art temperature rise is slower, needs to expend the more time.
The completion of second processing technique carries out reverse operating when needing to switch back to the first treatment process: step 1: in container 31
The second phase-change material micro-capsule remaining in pipeline is washed away with 20 degree of pure coolant liquid in top sends 41 lower part of container back to；Step
2: the first accumulation of heat mixed liquor 31 for completing to be switched to 31 lower part of container after washing away flows into pedestal 22 by V1.
The present invention each valve V1, V2, V3 shown in Fig. 3 and attached cooling fluid supply pipeline, can have other a variety of
Embodiment, such as valve V1, V2, V3 can be the combination of multiple single-pass valves, by controlling opening for each single-pass valve respectively
Close the three-way valve function of realizing V1 in the present invention.The output end of V1 and V2 can also pass through two independent cooling fluid supply pipes
Road is connected to the arrival end 220b of pedestal.These above-mentioned changes are the simple replacement that insider is readily conceivable that, are still belonged to
In the present invention program range.
The present invention makes coolant liquid form accumulation of heat mixed liquor by adding phase-change material micro-capsule in coolant liquid, and accumulation of heat is mixed
Temperature change will not be occurred by closing during liquid stream crosses pedestal, so that heat exchanging pipe different parts uniformly carry out heat in pedestal
Exchange, pedestal have uniform Temperature Distribution.The phase-change material wrapped up in phase-change material micro-capsule can have single fusing point,
It is also possible to the mixture of a variety of different melting points materials, realizes more fusing point phase-change materials in certain temperature range.The present invention
The two or more phase-change materials with single fusing point can be set in two independent cooling liquid containers, pass through accumulation of heat mixed liquor
Handoff procedure realizes the two accumulation of heat mixed liquor in the isolation of two kinds of phase-change material micro-capsules in handoff procedure.
The present invention is in addition to can be applied to plasma treatment appts realization to the etching or chemical vapor deposition of wafer
(CVD), other reaction chambers, such as heat treatment reaction chamber be can be used for, it is only necessary to wafer is heated to enough temperature and be not required to
Wafer is handled using plasma, to the demanding reaction chamber of temperature uniformity during any pair of wafer-process
, as the coolant liquid in pedestal heat exchanging pipe, to be achieved the object of the present invention using accumulation of heat mixed liquor of the invention.
It is discussed in detail although the contents of the present invention have passed through above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read above content, for of the invention
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. a kind of reaction chamber for wafer-process, the reaction chamber includes reaction cavity, reaction cavity be by side wall and top cover,
Bottom wall includes that a pedestal is used to support wafer to be processed in the air tight housing constituted, reaction chamber, includes at least in pedestal
One is used for the heat exchanging pipe of coolant flow, and the heat exchanging pipe includes an arrival end and one outlet end；
One base-plate temp control system is used to control the temperature of pedestal, and base-plate temp control system includes first and second cooling
Liquid container, each cooling liquid container include a upper output terminal and a lower output side, are also wrapped in each cooling liquid container
A microcapsules strainer is included, the microcapsules strainer spread phase-change material micro-capsule can only below strainer, the top
Output end is located above strainer, and lower output side is located at below strainer, and each cooling liquid container further includes that an input terminal is located at
Below strainer；Contain the first accumulation of heat mixed liquor in first cooling liquid container, contains the second accumulation of heat in the second cooling liquid container
Mixed liquor；
The top of first, second cooling liquid container, lower output side are connected to institute by multiple valves and coolant delivery pipeline
The arrival end of pedestal heat exchanging pipe is stated, the input terminal of the first, second cooling liquid container passes through at least one valve and coolant liquid
Conveyance conduit is connected to the outlet end of the pedestal heat exchanging pipe.
2. being used for the reaction chamber of wafer-process as described in claim 1, which is characterized in that pedestal is by metal in the reaction chamber
It is made, the pedestal is connected to radio-frequency power supply, and the radio-frequency power of radio-frequency power supply output is input to reaction chamber, so that producing above pedestal
Raw plasma simultaneously carries out plasma treatment to wafer.
3. being used for the reaction chamber of wafer-process as described in claim 1, which is characterized in that further include at the top of the reaction chamber into
For device of air for inputting reaction gas, the reaction gas reacts on the wafer forms chemical vapor deposition material layer.
4. being used for the reaction chamber of wafer-process as described in claim 1, which is characterized in that the default temperature of the accumulation of heat mixed liquor
Degree is the fusing point of phase-change material in phase-change material micro-capsule.
5. being used for the reaction chamber of wafer-process as described in claim 1, which is characterized in that wrapped in the phase-change material micro-capsule
A variety of phase-change materials are included, every kind of phase-change material has respective fusing point.
6. being used for the reaction chamber of wafer-process as described in claim 1, which is characterized in that the coolant liquid is leading for electrical isolation
Hydrothermal solution.
7. being used for the reaction chamber of wafer-process as claimed in claim 6, which is characterized in that the coolant liquid is Galden liquid.
8. being used for the reaction chamber of wafer-process as described in claim 1, which is characterized in that the diameter of the microcapsules is 1-
500um。
9. being used for the reaction chamber of wafer-process as described in claim 1, which is characterized in that in the phase-change material micro-capsule
Phase-change material is paraffin.
10. a kind of control method for the reaction chamber of wafer-process as described in claim 1, which is characterized in that the base
The temperature of seat changes in three phases,
The first accumulation of heat mixed liquor that the first cooling liquid container exports the first temperature from lower output side in first stage makes to pedestal
Pedestal is stablized in first temperature；
In second stage, the switching of accumulation of heat mixed liquor is carried out:
Stop the output of the first accumulation of heat mixed liquor of the first cooling liquid container lower output side, while the second coolant liquid in the first step
Container upper output terminal output second temperature coolant liquid arrive pedestal heat exchanging pipe arrival end, pedestal heat exchanging pipe out
Mouth end exports coolant liquid to the input terminal of the first cooling liquid container until the microcapsules in pedestal have been washed；
After having washed away the microcapsules in the first accumulation of heat mixed liquor, stop the output of the second cooling liquid container upper output terminal；
The second cooling liquid container is from the second accumulation of heat mixed liquor of lower output side output second temperature to pedestal in phase III, together
When pedestal heat exchanging pipe the accumulation of heat mixed liquor of outlet end output flow back into the input terminal of the second cooling liquid container, keep pedestal steady
It is scheduled on the second temperature.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611245188.1A CN108257839B (en) | 2016-12-29 | 2016-12-29 | A kind of reaction chamber for wafer-process |
| TW106137260A TWI667685B (en) | 2016-12-29 | 2017-10-27 | Reaction chamber for wafer processing |
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| CN201611245188.1A CN108257839B (en) | 2016-12-29 | 2016-12-29 | A kind of reaction chamber for wafer-process |
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| CN108257839B true CN108257839B (en) | 2019-10-08 |
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| CN112216585B (en) * | 2019-07-11 | 2022-12-30 | 中微半导体设备(上海)股份有限公司 | Plasma processor and base temperature control method |
| CN111303821A (en) * | 2020-03-14 | 2020-06-19 | 广东力王新材料有限公司 | Single-component heat storage potting material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104723525A (en) * | 2015-03-06 | 2015-06-24 | 北京化工大学 | Phase-change temperature-control injection molding equipment |
| CN105374657A (en) * | 2014-07-18 | 2016-03-02 | 中微半导体设备(上海)有限公司 | Plasma processing device and temperature control method thereof |
| TW201623666A (en) * | 2014-12-17 | 2016-07-01 | Linco Technology Co Ltd | Film coating system having function of cooling bearing tray |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8608900B2 (en) * | 2005-10-20 | 2013-12-17 | B/E Aerospace, Inc. | Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes |
| TWI411464B (en) * | 2009-08-19 | 2013-10-11 | Eternal Chemical Co Ltd | Microcapsule of phase change materials encapsulated with natural microtubule and their production |
| US8916793B2 (en) * | 2010-06-08 | 2014-12-23 | Applied Materials, Inc. | Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow |
| US20150060013A1 (en) * | 2013-09-05 | 2015-03-05 | Applied Materials, Inc. | Tunable temperature controlled electrostatic chuck assembly |
| KR101479251B1 (en) * | 2014-08-07 | 2015-01-05 | (주) 씨앤아이테크놀로지 | Sputtering Apparatus for EMI shielding of Semiconductor Packages and In-line Sputtering Deposition System Having the Same |
-
2016
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105374657A (en) * | 2014-07-18 | 2016-03-02 | 中微半导体设备(上海)有限公司 | Plasma processing device and temperature control method thereof |
| TW201623666A (en) * | 2014-12-17 | 2016-07-01 | Linco Technology Co Ltd | Film coating system having function of cooling bearing tray |
| CN104723525A (en) * | 2015-03-06 | 2015-06-24 | 北京化工大学 | Phase-change temperature-control injection molding equipment |
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| Publication number | Publication date |
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| TW201841201A (en) | 2018-11-16 |
| CN108257839A (en) | 2018-07-06 |
| TWI667685B (en) | 2019-08-01 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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