TW201839189A - Iii族氮化物半導體基板及iii族氮化物半導體基板之製造方法 - Google Patents
Iii族氮化物半導體基板及iii族氮化物半導體基板之製造方法 Download PDFInfo
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- TW201839189A TW201839189A TW106144759A TW106144759A TW201839189A TW 201839189 A TW201839189 A TW 201839189A TW 106144759 A TW106144759 A TW 106144759A TW 106144759 A TW106144759 A TW 106144759A TW 201839189 A TW201839189 A TW 201839189A
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- Prior art keywords
- nitride semiconductor
- group iii
- growth
- substrate
- iii nitride
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- 239000000758 substrate Substances 0.000 title claims abstract description 218
- 239000004065 semiconductor Substances 0.000 title claims abstract description 195
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 137
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 79
- 239000010980 sapphire Substances 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000002360 preparation method Methods 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000012159 carrier gas Substances 0.000 description 19
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 15
- 229910002601 GaN Inorganic materials 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- 238000005121 nitriding Methods 0.000 description 11
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000005699 Stark effect Effects 0.000 description 3
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 3
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910026551 ZrC Inorganic materials 0.000 description 2
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000009546 growth abnormality Effects 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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Abstract
本發明提供一種III族氮化物半導體基板之製造方法,其具有:基板準備步驟S10,其準備藍寶石基板;熱處理步驟S20,其對藍寶石基板進行熱處理;預先流入步驟S30,其對藍寶石基板上供給含金屬氣體;緩衝層形成步驟S40,其於藍寶石基板上,在生長溫度:800℃以上且950℃以下、壓力:30 torr以上且200 torr以下之生長條件下形成緩衝層;及生長步驟S50,其於緩衝層之上,在生長溫度:800℃以上且1025℃以下、壓力:30 torr以上且200 torr以下、生長速度:10 μm/h以上之生長條件下形成III族氮化物半導體層。
Description
本發明係關於一種III族氮化物半導體基板及III族氮化物半導體基板之製造方法。
專利文獻1與專利文獻2中揭示有相關技術。如利文獻1與專利文獻2中所揭示般,於在III族氮化物半導體晶體之c面上形成器件(例如:光學器件、電子器件等)之情形時,因壓電電場導致內部量子效率降低。因此,嘗試於所謂之半極性面(與極性面及無極性面不同之面)上形成器件。 又,專利文獻3與專利文獻4中揭示有相關技術。如專利文獻3與專利文獻4中所揭示般,嘗試製造如下III族氮化物半導體晶體,其係自大塊狀III族氮化物半導體晶體切出具有半極性面作為主表面之結晶片並接合該結晶片而製作,且將半極性面設為主表面。 又,專利文獻5中揭示有相關技術。如專利文獻5中所揭示般,嘗試製造如下氮化鎵(GaN)系半導體光學元件,其將作為自c面向m軸方向傾斜之半極性面之(20-21)面及(20-2-1)面設為主表面。 先前技術文獻 專利文獻 專利文獻1:日本專利特開2012-160755號公報 專利文獻2:日本專利特開2016-12717號公報 專利文獻3:日本專利特開2010-13298號公報 專利文獻4:日本專利特開2013-82628號公報 專利文獻5:日本專利特開2012-15555號公報
[發明所欲解決之問題] 本發明之課題在於提供一種用以提高形成於III族氮化物半導體基板上之器件之內部量子效率的技術。 [解決問題之技術手段] 根據本發明, 提供一種III族氮化物半導體基板,其包含III族氮化物半導體晶體,且膜厚為400 μm以上,處於正面及背面關係之露出之第1及第2主表面均為半極性面,對上述第1及第2主表面分別以平行於III族氮化物半導體晶體之c軸之投影軸之方式射入X射線而測得之XRC(X-ray Rocking Curve,X射線搖擺曲線)之半高寬之差為100 arcsec以下。 又,根據本發明, 提供一種III族氮化物半導體基板,其具有: 藍寶石基板;及 III族氮化物半導體層,其形成於上述藍寶石基板上,且具有半極性且N極性之露出之主表面。 又,根據本發明, 提供一種III族氮化物半導體基板之製造方法,其具有: 基板準備步驟,其準備藍寶石基板; 熱處理步驟,其於上述基板準備步驟之後對上述藍寶石基板進行熱處理; 預先流入步驟,其於上述熱處理步驟之後向上述藍寶石基板上供給含金屬氣體; 緩衝層形成步驟,其於上述預先流入步驟之後,於上述藍寶石基板上在生長溫度:800℃以上且950℃以下、壓力:30 torr以上且200 torr以下之生長條件下形成緩衝層;及 生長步驟,其於上述緩衝層形成步驟之後,於上述緩衝層之上在生長溫度:800℃以上且1025℃以下、壓力:30 torr以上且200 torr以下、生長速度:10 μm/h以上之生長條件下形成III族氮化物半導體層。 [發明之效果] 根據本發明,可提高形成於III族氮化物半導體基板上之器件之內部量子效率。
以下,利用圖式對本發明之III族氮化物半導體基板及III族氮化物半導體基板之製造方法之實施形態進行說明。再者,圖僅為用以說明發明之構成之概略圖,各構件之大小、形狀、數量、不同構件之大小之比率等並不限於所圖示者。 首先,對本實施形態之概要進行說明。若根據包含具有特徵性之複數個步驟的本實施形態之III族氮化物半導體基板之製造方法,則可於藍寶石基板上將N極性側之半極性面設為生長面並使III族氮化物半導體生長。結果可獲得露出面成為N極性側之半極性面的III族氮化物半導體層位於藍寶石基板上之III族氮化物半導體基板(模板基板)。又,藉由自該積層體將藍寶石基板剝離,可獲得包含藉由將N極性側之半極性面設為生長面並使III族氮化物半導體生長而獲得之III族氮化物半導體層的III族氮化物半導體基板(獨立基板)。 藉由於此種III族氮化物半導體基板(模板基板、獨立基板)上形成器件,而實現內部量子效率之提高。以下,進行詳細說明。 首先,對III族氮化物半導體基板(模板基板)之製造方法進行說明。圖3係對III族氮化物半導體基板(模板基板)之製造方法的處理之流程之一例進行表示之流程圖。如圖示般,III族氮化物半導體基板(模板基板)之製造方法具有:基板準備步驟S10、熱處理步驟S20、預先流入步驟S30、緩衝層形成步驟S40、及生長步驟S50。 於基板準備步驟S10中,準備藍寶石基板。藍寶石基板之直徑例如為1英吋以上。又,藍寶石基板之厚度例如為250 μm以上。 藍寶石基板之主表面之面方位為對於其上磊晶生長之III族氮化物半導體層之生長面之面方位進行控制的複數個要素中之1個。關於該要素與III族氮化物半導體層之生長面之面方位的關係,藉由以下實施例進行表示。於基板準備步驟S10中,準備主表面為所需之面方位之藍寶石基板。 藍寶石基板之主表面例如為{10-10}面、或將{10-10}面於特定方向上傾斜特定角度而成之面。 將{10-10}面於特定方向上傾斜特定角度而成之面例如可為將{10-10}面於任意方向上以大於0°且0.5°以下中之任一角度進行傾斜而成之面。 又,將{10-10}面於特定方向上傾斜特定角度而成之面亦可為將{10-10}面於與a面成平行之方向上以大於0°且未達10.5°中之任一角度進行傾斜而成之面。或,將{10-10}面於特定方向上傾斜特定角度而成之面亦可為將{10-10}面於與a面成平行之方向上以大於0°且10.5°以下中之任一角度進行傾斜而成之面。例如,將{10-10}面於特定方向上傾斜特定角度而成之面亦可為將{10-10}面於與a面成平行之方向上以0.5°以上且1.5°以下、1.5°以上且2.5°以下、4.5°以上且5.5°以下、6.5°以上且7.5°以下、9.5°以上且10.5°以下中之任一角度進行傾斜而成之面。 熱處理步驟S20於基板準備步驟S10之後進行。於熱處理步驟S10中,於以下條件下對藍寶石基板進行熱處理。 溫度:800℃以上且1200℃以下 壓力:30 torr以上且760 torr以下 熱處理時間:5分鐘以上且20分鐘以下 載氣:H2
、或H2
與N2
(H2
比率0~100%) 載氣供給量:3 slm以上且50 slm以下(但是,根據生長裝置之尺寸而供給量會發生變動,故而並不限於此) 再者,針對藍寶石基板之熱處理存在一面進行氮化處理一面進行之情況、與不進行氮化處理而進行之情況。於一面進行氮化處理一面進行熱處理之情形時,於熱處理時向藍寶石基板上供給0.5 slm以上且20 slm以下之NH3
(但是,根據生長裝置之尺寸而供給量會發生變動,故而並不限於此)。又,於不進行氮化處理而進行熱處理之情形時,於熱處理時未供給NH3
。 熱處理時之氮化處理之有無有時成為對在藍寶石基板之主表面上磊晶生長之III族氮化物半導體層之生長面之面方位進行控制之複數個要素中之1個。關於該要素與III族氮化物半導體層之生長面之面方位的關係,藉由以下實施例進行表示。 預先流入步驟S30於熱處理步驟S20之後進行。於預先流入步驟S30中,在以下條件下向藍寶石基板之主表面上供給含金屬氣體。預先流入步驟S30例如可於MOCVD(Metal Organic Chemical Vapor Deposition,金屬有機化學氣相沈積)裝置內進行。 溫度:500℃以上且1000℃以下 壓力:30 torr以上且200 torr以下 三甲基鋁供給量、供給時間:20 ccm以上且500 ccm以下、1秒以上且60秒以下 載氣:H2、或H2與N2(H2比率0~100%) 載氣供給量:3 slm以上且50 slm以下(但是,氣體之供給量會根據生長裝置之尺寸或構成而發生變動,故而並不限於此) 上述條件係供給作為有機金屬原料之三甲基鋁、三乙基鋁作為含金屬氣體之情形。於該步驟中,亦可供給含有代替三甲基鋁、三乙基鋁之其他金屬之含金屬氣體,而於藍寶石基板之主表面上形成代替鋁膜之鈦膜、釩膜或銅膜等其他金屬膜。又,亦可於藍寶石基板之主表面上形成作為與自有機金屬原料生成之甲烷、乙烯、乙烷等烴化合物之反應膜的碳化鋁、碳化鈦、碳化釩或碳化銅等其他碳化金屬膜。 藉由預先流入步驟S30,而於藍寶石基板之主表面上形成金屬膜及碳化金屬膜。該金屬膜之存在成為用以使於其上生長之晶體之極性反轉之條件。即,預先流入步驟S30之實施係用以將於藍寶石基板之主表面上磊晶生長之III族氮化物半導體層之生長面之面方位設為N極性側之面的複數個要素中之1個。 緩衝層形成步驟S40於預先流入步驟S30之後進行。於緩衝層形成步驟S40中,在藍寶石基板之主表面上形成緩衝層。緩衝層之厚度例如為20 nm以上且300 nm以下。 緩衝層例如為AIN(Aluminium Nitride,氮化鋁)層。例如可於以下條件下使AIN晶體磊晶生長,而形成緩衝層。 生長方法:MOCVD法 生長溫度:800℃以上且950℃以下 壓力:30 torr以上且200 torr以下 三甲基鋁供給量:20 ccm以上且500 ccm以下 NH3
供給量:0.5 slm以上且10 slm以下 載氣:H2
、或H2
與N2
(H2
比率0~100%) 載氣供給量:3 slm以上且50 slm以下(但是,氣體之供給量會根據生長裝置之尺寸或構成而發生變動,故而並不限於此) 緩衝層形成步驟S40之生長條件有時成為對在藍寶石基板之主表面上磊晶生長之III族氮化物半導體層之生長面之面方位進行控制的複數個要素中之1個。關於該要素與III族氮化物半導體層之生長面之面方位的關係,藉由以下實施例進行表示。 又,緩衝層形成步驟S40中之生長條件(相對較低之特定生長溫度,具體而言為800~950℃,及相對較低之壓力)成為用以一面維持N極性一面使AIN生長之條件。即,緩衝層形成步驟S40中之生長條件為用以將在藍寶石基板之主表面上磊晶生長之III族氮化物半導體層之生長面之面方位設為N極性側之面的複數個要素中之1個。 生長步驟S50於緩衝層形成步驟S40之後進行。於生長步驟S50中,於緩衝層之上在以下生長條件下使III族氮化物半導體晶體(例如:GaN晶體)磊晶生長,而形成生長面成為特定面方位(N極性側之半極性面)之III族氮化物半導體層。III族氮化物半導體層30之厚度例如為1 μm以上且20 μm以下。 生長方法:MOCVD法 生長溫度:800℃以上且1025℃以下 壓力:30 torr以上且200 torr以下 TMGa(trimethylgallium,三甲基鎵)供給量:25 sccm以上且1000 sccm以下 NH3供給量:1 slm以上且20 slm以下 載氣:H2
、或H2
與N2
(H2
比率0~100%) 載氣供給量:3 slm以上且50 slm以下(但是,氣體之供給量會根據生長裝置之尺寸或構成而發生變動,故而並不限於此) 生長速度:10 μm/h以上 生長步驟S50中之生長條件(相對較低之生長溫度,相對較低之壓力,相對較快之生長速度)成為用以一面維持N極性一面使GaN生長之條件。即,生長步驟S50中之生長條件為用以將在藍寶石基板之主表面上磊晶生長之III族氮化物半導體層之生長面之面方位設為N極性側之面的複數個要素中之1個。 藉由於以上條件下進行製造,可製造如圖4所示之依序積層有藍寶石基板21、緩衝層22、及III族氮化物半導體層23,且III族氮化物半導體層23之生長面24之面方位成為N極性側之半極性面的III族氮化物半導體基板20。又,藉由於上述條件之範圍內調整製造條件,可將生長面24之面方位設為所需之半極性面。 其次,對III族氮化物半導體基板(獨立基板)之製造方法進行說明。 例如,藉由於以如圖3所示之流程製造如圖4所示之積層體(模板基板)後,自該積層體將藍寶石基板21及緩衝層22去除(剝離步驟),可製造如圖5所示之包含III族氮化物半導體層23之III族氮化物半導體基板10(獨立基板)。將藍寶石基板21及緩衝層22去除之方法並無特別限制。例如,可利用由藍寶石基板21與III族氮化物半導體層23之間之線膨脹係數差引起之應力將該等分離。並且,可藉由研磨或蝕刻等去除緩衝層22。 作為其他去除例,亦可於藍寶石基板21與緩衝層22之間形成剝離層。例如,亦可於將分散有碳化物(碳化鋁、碳化鈦、碳化鋯、碳化鉿、碳化釩或碳化鉭)之碳層、及碳化物(碳化鋁、碳化鈦、碳化鋯、碳化鉿、碳化釩或碳化鉭)之層之積層體形成於藍寶石基板21上後,將經氮化處理之層製成剝離層而形成。 於在此種剝離層之上形成緩衝層22及III族氮化物半導體層23後,若以高於形成III族氮化物半導體層23時之加熱溫度之溫度對該積層體進行加熱,則可以剝離層之部分為交界而於藍寶石基板21側之部分、與III族氮化物半導體層23側之部分發生分離。藉由自III族氮化物半導體層23側之部分將緩衝層22等藉由研磨或蝕刻等去除,可獲得如圖5所示之包含III族氮化物半導體層23之III族氮化物半導體基板10(獨立基板)。 其次,對藉由上述製造方法而獲得之III族氮化物半導體基板20(模板基板)及III族氮化物半導體基板10(獨立基板)之構成及特徵進行說明。 如圖4所示般,III族氮化物半導體基板20(模板基板)具有:藍寶石基板21、形成於藍寶石基板21之上之緩衝層22、及形成於緩衝層22之上之III族氮化物半導體層23。III族氮化物半導體層23之主表面(生長面24)之面方位為半極性且N極性。 III族氮化物半導體層23之膜厚為1 μm以上。並且,III族氮化物半導體層23之主表面(生長面24)之XRC(X-ray Rocking Curve)之半高寬於c軸投影軸方向上為500 arcsec以下。 藉由以下實施例進行表示,於在半極性且Ga極性之生長面上磊晶生長有III族氮化物半導體之情形時,III族氮化物半導體層之厚度變得越厚,結晶性越惡化。結果為III族氮化物半導體層之厚度變得越厚,XRC之半高寬變得越大。因此,於生長面為半極性且Ga極性之情形時,難以製造結晶性良好且厚膜之III族氮化物半導體層。 另一方面,藉由以下實施例進行表示,於在半極性且N極性之生長面上磊晶生長有III族氮化物半導體之情形時,即便III族氮化物半導體層之厚度變厚,結晶性亦幾乎不發生變化。於在半極性且N極性之生長面上使III族氮化物半導體磊晶生長之本實施形態之情形時,可製造結晶性如上述(XRC之半高寬為以平行於III族氮化物半導體晶體之c軸之投影軸之方式射入X射線而測得之X射線搖擺曲線(XRC)半高寬為500 arcsec以下)般良好且如上述般厚膜(1 μm以上)之III族氮化物半導體層23。 如圖5所示般,III族氮化物半導體基板10(獨立基板)包含包含III族氮化物半導體晶體之III族氮化物半導體層23。III族氮化物半導體基板10(獨立基板)之膜厚為100 μm以上。並且,處於正面及背面關係之露出之第1主表面11及第2主表面12均為半極性面,對第1主表面11及第2主表面12分別以平行於III族氮化物半導體晶體之c軸之投影軸之方式射入X射線而測得之X射線搖擺曲線(XRC)半高寬之差為100 arcsec以下。第1主表面11及第2主表面12之XRC之半高寬均為於c軸投影軸方向上為500 arcsec以下。 例如,若於在藍寶石基板上使生長面之面方位成為半極性且Ga極性之III族氮化物半導體磊晶生長後,自III族氮化物半導體層將藍寶石基板去除,則外觀變得與如圖5所示之本實施形態之III族氮化物半導體基板10(獨立基板)相同。但是,此種基板、與本實施形態之III族氮化物半導體基板10(獨立基板)於使III族氮化物半導體磊晶生長時之生長面為「半極性且Ga極性」亦或「半極性且N極性」方面存在差異。 該差異可藉由觀察膜厚、與處於正面及背面關係之主表面之XRC之半高寬之差的關係而確認。 如上所述,於在半極性且Ga極性之生長面上磊晶生長有III族氮化物半導體之情形時,III族氮化物半導體層之厚度變得越厚,結晶性越惡化,XRC之半高寬變大。即,膜厚變得越厚,處於正面及背面關係之主表面之XRC之半高寬的差變得越大。 另一方面,於在半極性且N極性之生長面上磊晶生長有III族氮化物半導體之情形時,即便III族氮化物半導體層之厚度變厚,結晶性亦幾乎不發生變化。即,即便膜厚變大,處於正面及背面關係之主表面之XRC之半高寬的差亦成為特定等級以下。 基於以上,藉由確認膜厚為特定範圍時之處於正面及背面關係之主表面之XRC之半高寬的差,可確認其III族氮化物半導體基板為在「半極性且Ga極性」之生長面上磊晶生長而成者、亦或為在「半極性且N極性」之生長面上磊晶生長而成者。 具體而言,於滿足「於膜厚為300 μm以上之情形時,處於正面及背面關係之主表面之XRC之半高寬的差為100 arcsec以下」之情形時,可謂為在「半極性且N極性」之生長面上磊晶生長而成之III族氮化物半導體基板。並且,於滿足「於膜厚為300 μm以上之情形時,處於正面及背面關係之主表面之XRC之半高寬的差大於100 arcsec」之情形時,可謂為在「半極性且Ga極性」之生長面上磊晶生長而成之III族氮化物半導體基板。 其次,對本實施形態之作用效果進行說明。 根據本實施形態之III族氮化物半導體基板之製造方法,可在藍寶石基板上將N極性側之半極性面設為生長面並使III族氮化物半導體生長。結果如圖4所示般,可獲得露出面(生長面24)成為N極性側之半極性面之III族氮化物半導體層23位於藍寶石基板21上之III族氮化物半導體基板20(模板基板)。又如圖5所示般,可獲得包含III族氮化物半導體層23之III族氮化物半導體基板10(獨立基板),該III族氮化物半導體層23係藉由將N極性側之半極性面設為生長面並使III族氮化物半導體生長而獲得者。 藉由於此種III族氮化物半導體基板(模板基板、獨立基板)上形成器件,而實現內部量子效率之提高。 又,若使用本實施形態之III族氮化物半導體基板(模板基板、獨立基板),則可於面方位為N極性側之半極性面之主表面上形成器件。於該情形時,不僅實現藉由半極性面之效果而獲得之壓電極化之降低,亦實現自發極化之降低。因此,可抑制因內部電場引起之史塔克效應。 又,本發明者等人確認:於將N極性側之半極性面設為生長面並使III族氮化物半導體生長之情形時,與將Ga極性側之半極性面設為生長面並使III族氮化物半導體生長之情形相比,表面狀態容易變平坦。於將Ga極性側之半極性面設為生長面並使III族氮化物半導體生長之情形時,容易產生凹坑、或來自m面成分之刻面。即便就該方面而言,亦為本實施形態之III族氮化物半導體基板(模板基板、獨立基板)優異。 又,本發明者等人確認:於將N極性側之半極性面設為生長面並使III族氮化物半導體生長之情形時,與將Ga極性側之半極性面設為生長面並使III族氮化物半導體生長之情形相比,雜質之帶入較小。具體而言,進行在相同裝置及相同生長條件下生長之兩種極性面(N極性側之半極性面及Ga極性側之半極性面)之HaLL測定,結果確認:於將N極性側之半極性面設為生長面並使III族氮化物半導體生長之情形時,與將Ga極性側之半極性面設為生長面並使III族氮化物半導體生長之情形相比,載子濃度小1位數。推測其原因在於:可降低O之帶入。即便就該方面而言,亦為本實施形態之III族氮化物半導體基板(模板基板、獨立基板)優異。 又,根據本實施形態,提供一種III族氮化物半導體基板,其具有:III族氮化物半導體層,其形成於藍寶石基板上,且具有半極性且N極性之露出之主表面;及藍寶石基板,其作為基底基板。又,藉由於上述III族氮化物半導體基板上進行晶體生長,而提供一種處於正面及背面關係之露出之第1及第2主表面均為半極性面之III族氮化物半導體獨立基板。 關於藉由本實施形態而提供之III族氮化物半導體獨立基板之處於正面及背面關係之露出之第1及第2主表面,例如一面為自c面向a面方向傾斜38.0°以上且53.0°以下且於m面方向上傾斜-16.0°以上且16.0°以下而成之半極性面,另一面為自-c面向-a面方向傾斜38.0°以上且53.0°以下且於m面方向上傾斜-16.0°以上且16.0°以下而成之半極性面。又,具有藍寶石基板作為基底基板之III族氮化物半導體基板之主表面例如為自-c面向a面方向傾斜38.0°以上且53.0°以下且於m面方向上傾斜-16.0°以上且16.0°以下而成之半極性面。 尤其於在主表面上形成發光器件(LED(Light Emitting Diode,發光二極體)、LD(laser diode,雷射二極體))之情形時,自c面向a面方向傾斜39.1°而成之面((11-24)面)如Jpn. J. Appl. Phys. Vol. 39 (2000) pp. 413-416中所報告之圖1所示般,壓電電場成為0,故而可藉由無極性面之m面、及抑制由與a面相同之史塔克效應引起之內部量子效率之降低的效果而獲得消耗電力之降低、發光效率之提高。又,自-c面向-a面方向傾斜39.1°而成之半極性且N極性之主表面((-1-12-4)面)不僅實現藉由半極性面之效果而獲得之壓電極化之降低,亦實現於自氮原子向鎵原子之朝向上發生之自發極化之降低。因此,可進一步抑制由在發光器件(LED、LD)之活化層產生之內部電場引起之史塔克效應,故而可獲得進一步之發光器件(LED、LD)之性能提高。 專利文獻1與專利文獻2中所提供之III族氮化物半導體層均具有為半極性且Ga極性之主表面,與藉由本實施形態而提供之具有:具有為半極性且N極性之主表面之III族氮化物半導體層、及藍寶石基板之III族氮化物半導體基板相比較,器件之內部量子效率較低。 若使用藉由本實施形態而提供之具有藍寶石基板作為基底基板之III族氮化物半導體基板,且將藍寶石基板藉由包含公知技術、慣用技術之任意方法進行去除,則可製造與所使用之藍寶石基板之大小相同之大口徑,且基板面內之結晶性、表面平坦性、雜質濃度、面方位之軸晃動均一,且無需精細之製造技術的III族氮化物半導體獨立基板。此處所言之公知技術、慣用技術例如為化學蝕刻或機械研磨、利用熱應力之晶體剝離等。 專利文獻3與專利文獻4之方法所提供之III族氮化物半導體獨立基板為對自將c面設為主表面之III族氮化物半導體獨立基板於任意面方位切出之結晶片進行結合而製作之將半極性面設為主表面之III族氮化物半導體獨立基板。為了實現其,而需要自大塊晶體大量地切出結晶片之步驟、或將結晶片於相同高度之晶軸方向上以較高之精度對齊後進行接合之步驟,故而需要用以實現較高之良率之精細之技術。又,由於將結晶片接合使基板之口徑變大,故而於接合部產生原子位置之偏移,於該部發生高密度之錯位。因此,發生基板之結晶性之降低與錯位密度之面內分佈不均。又,於接合面為c面、m面、及自m面向c面方向傾斜而成之面之情形時,出現{11-22}面或{10-11}面等刻面,如圖2所示般產生較大之凹處或晶體生長異常,故而產生表面平坦性之顯著惡化與接合強度不足,而在基板之處理上產生困難。 又,為了解決由起因於如圖2所示之較大之凹處或晶體生長異常的表面平坦性之顯著惡化與接合強度不足引起之基板之處理困難,而容易地考慮使用專利文獻3與專利文獻4之方法將接合面僅設為a面及自a面之傾斜面,但是即便於該情形時,亦無法解決由接合面中之原子位置之偏移引起之錯位發生、與伴隨其之錯位密度之面內分佈不均。又,由於以a面或使a面傾斜而成之面進行晶體之接合,因此無法製造由本實施形態所提供之將a面之傾斜面設為主表面之III族氮化物半導體獨立基板。 由本實施形態所提供之III族氮化物半導體獨立基板之第1及第2主表面均例如為a面之傾斜面,故而於側面具有解理面(m面)。藉由提供具有解理面之基板,可容易地獲得於半導體雷射(LD)中對於光共振而言必不可少之原子有規律完美地排列且平坦性優異之反射鏡面。 專利文獻5中所提供之將(20-21)面及(20-2-1)面設為主表面之GaN系半導體雷射元件由於主表面為m面之傾斜面,故而未於側面具有解理面。因此,無法獲得可獲得光共振之平坦性較高之反射鏡面。故而,於製造製品時需要用以使側面平坦化之高度且精細之技術,從而製造步驟複雜化。又,由於使用平坦性差之反射鏡面,故而與利用解理面製作鏡面構造而成之GaN系半導體光雷射元件相比,性能較差。 [實施例] <第1評價> 於第1評價中確認到,藉由滿足上述「用以將III族氮化物半導體層之生長面之面方位設為N極性側之面的複數個要素」之全部,可將III族氮化物半導體層之生長面之面方位設為N極性側之面。又確認到,於未滿足上述「用以將III族氮化物半導體層之生長面之面方位設為N極性側之面的複數個要素」中之至少1個之情形時,III族氮化物半導體層之生長面之面方位成為Ga極性側之面。 首先,準備主表面之面方位為自m面((10-10)面)於與a面成平行之方向上傾斜2°而成之面的藍寶石基板。藍寶石基板之厚度為430 μm,直徑為2英吋。 然後,於以下條件下對所準備之藍寶石基板實施熱處理步驟S20。 溫度:1000~1050℃ 壓力:100 torr 載氣:H2
、N2
熱處理時間:10分鐘或15分鐘 載氣供給量:15 slm 再者,於熱處理步驟S20時供給20 slm之NH3
,進行氮化處理。 其後,於以下條件下進行預先流入步驟S30。 溫度:800~930℃ 壓力:100 torr 三甲基鋁供給量、供給時間:90 sccm、10秒鐘 載氣:H2
、N2
載氣供給量:15 slm 其後,於以下條件下進行緩衝層形成步驟S40,而形成AIN層。 生長方法:MOCVD法 生長溫度:800~930℃ 壓力:100 torr 三甲基鋁供給量:90 sccm NH3
供給量:5 slm 載氣:H2
、N2
載氣供給量:15 slm 其後,於以下條件下進行生長步驟S50,而形成III族氮化物半導體層。 生長方法:MOCVD法 壓力:100 torr TMGa供給量:50~500 sccm(連續變化) NH3
供給量:5~10 slm(連續變化) 載氣:H2
、N2
載氣供給量:15 slm 生長速度:10 μm/h以上 再者,第1樣品之生長溫度控制於900℃±25℃,第2樣品之生長溫度控制於1050℃±25℃。即,第1樣品為滿足上述「用以將III族氮化物半導體層之生長面之面方位設為N極性側之面的複數個要素」之全部之樣品。第2樣品為未滿足上述「用以將III族氮化物半導體層之生長面之面方位設為N極性側之面的複數個要素」中之一部分(生長步驟S50中之生長溫度)之樣品。 第1樣品之III族氮化物半導體層之生長面之面方位為自(-1-12-4)面向-a面方向傾斜5.0°且於與m面成平行之方向上上傾斜8.5°以下而成之面。另一方面,第2樣品之III族氮化物半導體層之生長面之面方位為自(11-24)面向a面方向傾斜5.0°且於與m面成平行之方向上傾斜8.5°以下而成之面。即,可知藉由是否滿足上述「用以將III族氮化物半導體層之生長面之面方位設為N極性側之面的複數個要素」,可調整生長面之面方位成為Ga極性或成為N極性。 於圖6表示第1樣品中之(-1-12-4)面、或(11-24)面之XRD極點測定結果。可確認繞射峰為自極點之中心點偏移數度之位置。若詳細地測定角度之偏移,則可確認為向-a面方向傾斜5.0°且於與m面成平行之方向上傾斜8.5°、或向a面方向傾斜5.0°且於與m面成平行之方向上傾斜8.5°之位置。 於圖7表示確認到第1樣品中之圖4中所示之露出面(生長面24)為N極性之結果。又,作為比較而於圖8表示自+c面之厚膜生長GaN獨立基板以成為與第1樣品相同之面方位之方式進行切片而製作之III族氮化物半導體獨立基板之結果。對第1樣品、及自+c面GaN獨立基板進行切片而製作之半極性獨立基板之兩面(基板之正面與背面)一併實施1.5 μm金剛石研磨,將磷酸硫酸混合液保持於150℃並進行30分鐘之蝕刻。 自圖7及圖8,可確認第1樣品之露出面(生長面24)與自+c面GaN獨立基板進行切片而製作之半極性獨立基板之背面(N極性面)的蝕刻表面狀態相同。又,可確認第1樣品之剝離面與自+c面GaN獨立基板進行切片而製作之半極性獨立基板之正面(Ga極性面)的蝕刻表面狀態相同,故而可確認圖4中所示之露出面(生長面24)為N極性。 再者,本發明者等人確認,即便於未滿足上述「用以將III族氮化物半導體層之生長面之面方位設為N極性側之面的複數個要素」中之其他一部分之情形、或未滿足全部之情形時,生長面之面方位亦成為Ga極性。 <第2評價> 於第2評價確認到,藉由調整上述「用以調整III族氮化物半導體層之生長面之面方位的複數個要素」,可調整III族氮化物半導體層之生長面之面方位。 首先,準備複數個主表面之面方位各種各樣之藍寶石基板。藍寶石基板之厚度為430 μm,直徑為2英吋。 然後,於以下條件下對所準備之藍寶石基板分別進行熱處理步驟S20。 溫度:1000~1050℃ 壓力:200 torr 熱處理時間:10分鐘 載氣:H2
、N2
載氣供給量:15 slm 再者,製成熱處理時之氮化處理之有無不同之樣品。具體而言,製成於熱處理時供給20 slm之NH3
而進行氮化處理之樣品、與於熱處理時未供給NH3
而未進行氮化處理之樣品兩者。 其後,於以下條件下進行預先流入步驟S30。 溫度:880~930℃ 壓力:100 torr 三甲基鋁供給量、供給時間:90 sccm、10秒鐘 載氣:H2、N2 載氣供給量:15 slm 再者,製成進行預先流入步驟S30之樣品、與未進行之樣品兩者。 其後,於藍寶石基板之主表面(露出面)上在以下條件下形成約150 nm厚度之緩衝層(AIN緩衝層)。 生長方法:MOCVD法 壓力:100 torr V/III比:5184 TMAl(Trimethylaluminium,三甲基鋁)供給量:90 ccm NH3
供給量:5 slm 載氣:H2
、N2
載氣供給量:15 slm 再者,生長溫度係每個樣品於700℃以上且1110℃以下之範圍內不同。 其後,於緩衝層之上在以下條件下形成約15 μm厚度之III族氮化物半導體層(GaN層)。 生長方法:MOCVD法 生長溫度:900~1100℃ 壓力:100 torr V/III比:321 TMGa供給量:50~500 ccm(斜線上升) NH3
供給量:5~10 slm(斜線上升) 載氣:H2
、N2
載氣供給量:15 slm 藉由以上方式,而製造依序積層有藍寶石基板、緩衝層、及III族氮化物半導體層之III族氮化物半導體基板1。 於表1至7中表示「用以調整III族氮化物半導體層之生長面之面方位的複數個要素」、與III族氮化物半導體層之生長面之面方位的關係。 [表1]
[表2]
[表3]
[表4]
[表5]
[表6]
[表7]
於表中之「藍寶石主表面」一欄中,表示藍寶石基板之主表面之面方位。於「升溫時之氮化處理」一欄中,表示熱處理步驟S20時之升溫時之氮化處理之有無(「有」或「無」)。於「三甲基鋁預先流入步驟之有無」一欄中,表示三甲基鋁預先流入步驟之有無(「有」或「無」)。於「AIN緩衝層生長溫度」一欄中,表示緩衝層形成步驟中之生長溫度。於「GaN生長溫度」一欄中,表示GaN層形成步驟中之生長溫度。於「III族氮化物半導體層之生長面」一欄中,表示III族氮化物半導體層之生長面之面方位。 根據該結果可知,藉由調整上述「用以調整III族氮化物半導體層之生長面之面方位的複數個要素」,可將III族氮化物半導體層之生長面之面方位於半極性且Ga極性中進行調整。並且,基於第1評價之結果與第2評價之結果可知,藉由在滿足「用以將III族氮化物半導體層之生長面之面方位設為N極性側之面的複數個要素」之全部之基礎上對「用以調整III族氮化物半導體層之生長面之面方位的複數個要素」進行調整,可將III族氮化物半導體層之生長面之面方位於半極性且N極性中進行調整。 <第3評價> 對藉由本手法而製作之樣品之結晶性進行評價。試樣準備三種。樣品A為藉由本說明書所記載之手法而製作者,以{11-23}面作為生長面。樣品B、C為比較用樣品,樣品B將{10-10}面設為生長面。又,樣品C將{11-22}面設為生長面。 於圖9表示在複數個GaN膜厚時對各樣品以平行於III族氮化物半導體晶體之c軸之投影軸之方式射入X射線而測得之情形時的XRC半高寬。但是,主表面為{11-23}面之樣品C由於因消光規則導致無法獲得{11-23}面之X射線繞射,故而測定{11-22}面之XRC半高寬。 自圖9可知,樣品A即便GaN層之膜厚變大,XRC半高寬亦幾乎不發生改變。相對於此,關於樣品B及C看到如下傾向,即隨著GaN層之膜厚變大,XRC半高寬亦變大。 以下,附記參考形態之例。 1.一種III族氮化物半導體基板,其包含III族氮化物半導體晶體,且膜厚為400 μm以上,處於正面及背面關係之露出之第1及第2主表面均為半極性面,對上述第1及第2主表面分別以平行於III族氮化物半導體晶體之c軸之投影軸之方式射入X射線而測得之XRC(X-ray Rocking Curve)之半高寬之差為100 arcsec以下。 2.如1之III族氮化物半導體基板,其中 上述第1及第2主表面之上述半高寬均為以平行於III族氮化物半導體晶體之c軸之投影軸之方式射入X射線而測得之X射線搖擺曲線(XRC)半高寬為500 arcsec以下。 3.一種III族氮化物半導體基板,其具有: 藍寶石基板;及 III族氮化物半導體層,其形成於上述藍寶石基板上,且具有半極性且N極性之露出之主表面。 4.如3之III族氮化物半導體基板,其中 上述III族氮化物半導體層之膜厚為1 μm以上。 5.如3或4之III族氮化物半導體基板,其中 上述III族氮化物半導體層之上述主表面之XRC之半高寬於c投影軸方向上為500 arcsec以下。 6.一種III族氮化物半導體基板之製造方法,其具有: 基板準備步驟,其準備藍寶石基板; 熱處理步驟,其於上述基板準備步驟之後對上述藍寶石基板進行熱處理; 預先流入步驟,其於上述熱處理步驟之後向上述藍寶石基板上供給含金屬氣體; 緩衝層形成步驟,其於上述預先流入步驟之後,於上述藍寶石基板上在生長溫度:800℃以上且950℃以下、壓力:30 torr以上且200 torr以下之生長條件下形成緩衝層;及 生長步驟,其於上述緩衝層形成步驟之後,於上述緩衝層之上在生長溫度:800℃以上且1025℃以下、壓力:30 torr以上且200 torr以下、生長速度:10 μm/h以上之生長條件下形成III族氮化物半導體層。 7.如6之III族氮化物半導體基板之製造方法,其進而具有: 剝離步驟,其於上述生長步驟之後,自包含上述III族氮化物半導體層與上述藍寶石基板之積層體將上述藍寶石基板剝離。 該申請案主張以於2016年12月20日提出申請之日本專利特願2016-246908號作為基礎之優先權,並將其揭示之內容全部內容引用於本文中。
10‧‧‧III族氮化物半導體基板(獨立基板)
11‧‧‧第1主表面
12‧‧‧第2主表面
20‧‧‧III族氮化物半導體基板(模板基板)
21‧‧‧藍寶石基板
22‧‧‧緩衝層
23‧‧‧III族氮化物半導體層
24‧‧‧生長面
上述目的、及其他目的、特徵以及優點係藉由以下所述之較佳之實施形態、及其所隨附之以下圖式而得到進一步明確。 圖1係表示本實施形態之III族氮化物半導體基板之特性的圖。 圖2係表示與本實施形態之III族氮化物半導體基板之差異的實施例。 圖3係對本實施形態之III族氮化物半導體基板之製造方法的處理之流程之一例進行表示之流程圖。 圖4係表示本實施形態之III族氮化物半導體基板之一例的側視模式圖。 圖5係表示本實施形態之III族氮化物半導體基板之一例的側視模式圖。 圖6係表示本實施形態之III族氮化物半導體基板之特性的圖。 圖7係表示本實施形態之III族氮化物半導體基板之特性的圖。 圖8係表示與本實施形態之III族氮化物半導體基板之差異的圖。 圖9係表示本實施形態之III族氮化物半導體基板之特性的圖。
Claims (7)
- 一種III族氮化物半導體基板,其包含III族氮化物半導體晶體,且膜厚為400 μm以上,處於正面及背面關係之露出之第1及第2主表面均為半極性面,對上述第1及第2主表面分別以平行於III族氮化物半導體晶體之c軸之投影軸之方式射入X射線而測得之XRC(X-ray Rocking Curve,X射線搖擺曲線)之半高寬的差為100 arcsec以下。
- 如請求項1之III族氮化物半導體基板,其中 上述第1及第2主表面之上述半高寬均為以平行於III族氮化物半導體晶體之c軸之投影軸之方式射入X射線而測得之X射線搖擺曲線(XRC)半高寬為500 arcsec以下。
- 一種III族氮化物半導體基板,其具有: 藍寶石基板;及 III族氮化物半導體層,其形成於上述藍寶石基板上,且具有半極性且N極性之露出之主表面。
- 如請求項3之III族氮化物半導體基板,其中 上述III族氮化物半導體層之膜厚為1 μm以上。
- 如請求項3或4之III族氮化物半導體基板,其中 上述III族氮化物半導體層之上述主表面之XRC之半高寬於c投影軸方向上為500 arcsec以下。
- 一種III族氮化物半導體基板之製造方法,其具有: 基板準備步驟,其準備藍寶石基板; 熱處理步驟,其於上述基板準備步驟之後對上述藍寶石基板進行熱處理; 預先流入步驟,其於上述熱處理步驟之後向上述藍寶石基板上供給含金屬氣體; 緩衝層形成步驟,其於上述預先流入步驟之後,於上述藍寶石基板上在生長溫度:800℃以上且950℃以下、壓力:30 torr以上且200 torr以下之生長條件下形成緩衝層;及 生長步驟,其於上述緩衝層形成步驟之後,於上述緩衝層之上在生長溫度:800℃以上且1025℃以下、壓力:30 torr以上且200 torr以下、生長速度:10 μm/h以上之生長條件下形成III族氮化物半導體層。
- 如請求項6之III族氮化物半導體基板之製造方法,其 於上述生長步驟之後,進而具有:剝離步驟,其自包含上述III族氮化物半導體層與上述藍寶石基板之積層體將上述藍寶石基板剝離。
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JP6704386B2 (ja) * | 2015-02-27 | 2020-06-03 | 住友化学株式会社 | 窒化物半導体テンプレート及びその製造方法、並びにエピタキシャルウエハ |
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CN110100304B (zh) | 2023-10-20 |
JP6266742B1 (ja) | 2018-01-24 |
JP2018101694A (ja) | 2018-06-28 |
WO2018117050A1 (ja) | 2018-06-28 |
EP3561855A1 (en) | 2019-10-30 |
KR20190097084A (ko) | 2019-08-20 |
CN110100304A (zh) | 2019-08-06 |
TWI738946B (zh) | 2021-09-11 |
US20210180211A1 (en) | 2021-06-17 |
EP3561855A4 (en) | 2020-09-30 |
KR102415252B1 (ko) | 2022-06-29 |
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