TW201816973A - 模壓智慧電源模組 - Google Patents
模壓智慧電源模組 Download PDFInfo
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- TW201816973A TW201816973A TW106122936A TW106122936A TW201816973A TW 201816973 A TW201816973 A TW 201816973A TW 106122936 A TW106122936 A TW 106122936A TW 106122936 A TW106122936 A TW 106122936A TW 201816973 A TW201816973 A TW 201816973A
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- transistor
- power module
- smart power
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- 229910052751 metal Inorganic materials 0.000 description 1
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Abstract
一種智慧電源模組具有第一、第二、第三和第四晶片焊盤,第一、第二、第三、第四、第五和第六電晶體,連接桿、低壓IC、高壓IC、第一、第二和第三升壓二極體、多個引線和一個模壓封裝。第一電晶體連接到第一晶片焊盤上。第二電晶體連接到第二晶片焊盤上。第三電晶體連接到第三晶片焊盤上。第四、第五和第六電晶體連接到第四晶片焊盤上。低壓和高壓IC連接到連接桿。模壓封裝包圍著第一、第二、第三和第四晶片焊盤,第一、第二、第三、第四、第五和第六電晶體,連接桿、低壓IC、高壓IC、第一、第二和第三升壓二極體。本發明與習知的智慧電源模組相比,具有減小頂表面積以及引線數量的優點。
Description
本發明主要涉及一種用於驅動電動機的模壓智慧電源模組(IPM)。更確切地說,本發明是關於一種模壓IPM,與傳統的IPM相比,減小了頂表面積,並且減少了引線數量。
傳統的IPM使用絕緣金屬襯底(IMS)。IMS通常由兩個銅層嵌制而成。在本說明書中,在一個過模壓型IPM中使用引線框和晶片焊盤,簡化了製備工藝,降低了製備成本。用於驅動發動機的傳統IPM具有三個驅動積體電路(IC)。在本說明書中,IPM具有一個低壓IC和一個高壓IC。
藉由優化佈局,獲得了緊湊的封裝尺寸。優化佈局使用兩個驅動IC,代替三個驅動IC,沿鄰近的晶片焊盤引入等角的彎曲邊。藉由將兩個驅動IC連接在同一個拉桿上,並藉由接合引線將三個升壓二極體連接到電源引腳上的選定引線上,來實現減少引線數量的目的。
本發明的目的是提供一種用於驅動電動機的模壓智慧電源模組。
本發明提出了一種具有第一、第二、第三和第四晶片焊盤的IPM,第一、第二、第三、第四、第五和第六金屬-氧化物-半導體場效應電晶體(MOSFET),連接桿、低壓IC、高壓IC、第一、第二和第三升壓二極體、多個引線以及一個模壓封裝。第一MOSFET連接到第一晶片焊盤。第二MOSFET連接到第二晶片焊盤。第三MOSFET連接到第三晶片焊盤。第四、第五和第六MOSFET連接到第四晶片焊盤。低壓和高壓IC連接到連接桿。模壓封裝密封了第一、第二和第三和第四晶片焊盤、第一、第二、第三、第四、第五和第六MOSFET、連接桿、低壓和高壓IC以及第一、第二和第三升壓二極體。
至少四個通孔沿溝槽分佈,隔開連接桿以及第一、第二、第三和第四晶片焊盤。這四個通孔分佈在連接桿的底部邊緣中間部分和第一、第二、第三和第四晶片焊盤的頂部邊緣之間。通孔有助於減少濕氣的形成。配置至少四個通孔,以便在模壓過程中接收至少四個支持引腳。
本發明提供了一種用於驅動發動機的智慧電源模組,包含:一個第一、第二、第三和第四晶片焊盤;一個第一電晶體連接到第一晶片焊盤上;一個第二電晶體連接到第二晶片焊盤上;一個第三電晶體連接到第三晶片焊盤上;第五和第六電晶體連接到第四晶片焊盤上;連接桿具有第一端、第二端和中間範圍延伸物;一個低壓積體電路連接到連接桿;低壓積體電路電連接到第一、第二和第三電晶體;一個高壓積體電路連接到連接桿;高壓積體電路電連接到第四、第五和第六電晶體;第一、第二和第三升壓二極體;多個引線以及模壓封裝包圍著第一、第二、第三和第四晶片焊盤,第一、第二、第三、第四、第五和第六電晶體,連接桿、低壓積體電路、高壓積體電路和第一、第二和第三升壓二極體;其中多個引線部分嵌入在模壓封裝中。
較佳地,所述模壓封裝在連接桿的第一端附近設有第一缺口,以及在連接桿的第二端附近設有第二缺口。
較佳地,在第一、第二和第三升壓二極體附近,所述模壓封裝具有絕緣缺口。
較佳地,所述連接桿的中間範圍延伸物機械並電連接到接地引腳。
較佳地,其中第一、第二、第三和第四晶片焊盤的頂部邊緣是共面的;其中連接桿的底部邊緣的中間部分平行於第一、第二、第三和第四晶片焊盤的頂部邊緣;其中至少四個通孔在連接桿底部邊緣的中間部分和第一、第二、第三、第四晶片焊盤的頂部邊緣之間,並且所述至少四個通孔沿長軸方向對齊。
較佳地,其中配置至少四個通孔,以便在模壓過程中,接收四個支撐引腳。
較佳地,其中低壓積體電路藉由多個接合引線,電連接到第一、第二和第三電晶體。
較佳地,其中高壓積體電路藉由多個接合引線,電連接到第四、第五和第六電晶體。
較佳地,其中第一接合引線將第一升壓二極體連接到多個引線的一個鄰近引線上;
第二接合引線將第二升壓二極體連接到第一升壓二極體;
第三接合引線將第三升壓二極體連接到第二升壓二極體。
較佳地,所述鄰近引線機械並電連接到電源Vcc引腳。
較佳地,其中多個引線的至少兩個所選引線具有長方形缺口,以便用作引線擋梢。
較佳地,其中第三晶片焊盤的第一曲邊和第四焊盤的第二曲邊具有相同的曲率中心,且所述第一曲邊的曲率半徑大於第二曲邊的曲率半徑。
較佳地,所述智慧電源模組進一步設有第一連接構件,其將第一晶片焊盤連接到多個引線的第一引線;第二連接構件,其將第二晶片焊盤連接到多個引線的第二引線;第三連接構件,其將第三晶片焊盤連接到多個引線的第三引線;並且所述第一、第二和第三連接構件具有相同的寬度。
較佳地,所述低壓積體電路和高壓積體電路直接連接到連接桿,並且其中所述智慧電源模組不包括直接連接到連接桿上的另一個積體電路。
較佳地,其中第一電晶體為第一個金屬-氧化物-半導體場效應電晶體;第二電晶體為第二個金屬-氧化物-半導體場效應電晶體;第三電晶體為第三個金屬-氧化物-半導體場效應電晶體;第四電晶體為第四個金屬-氧化物-半導體場效應電晶體;第五電晶體為第五個金屬-氧化物-半導體場效應電晶體;第六電晶體為第六個金屬-氧化物-半導體場效應電晶體。
本發明與習知技術相比具有以下優點:
本發明藉由優化佈局,使用兩個驅動IC,代替三個驅動IC,沿鄰近的晶片焊盤引入等角的彎曲邊,且將兩個驅動IC連接在同一個拉桿上,並將三個升壓二極體連接到電源引腳上的選定引線上,具有緊湊的封裝尺寸,減少頂表面積與引線數量的優點。
本發明的連接構件的寬度比習知技術的連接構件的寬度寬。較寬的連接構件可以提供較強的機械支撐,藉由降低電阻和增強熱耗散,提高電流性能。
以下結合圖式,藉由詳細說明一個較佳的具體實施例,對本發明做進一步闡述。
第1圖表示在本發明的示例中,用於驅動發動機IPM的電路圖100。低壓積體電路(IC)120控制第一電晶體142、第二電晶體144和第三電晶體146。高壓IC122控制第四電晶體152、第五電晶體154和第六電晶體156。在本發明的示例中,電晶體為金屬-氧化物-半導體場效應電晶體。
第2圖表示在本發明的示例中,IPM 200的透視圖。IPM 200的頂面積202最多有500平方毫米。傳統的IPM頂面積約為750平方毫米。
第3圖表示在本發明的示例中,IPM(帶有圖中沒有表示出的模壓封裝)的仰視圖。IPM 300具有第一晶片焊盤302A、第二晶片焊盤302B、第三晶片焊盤302C、第四晶片焊盤302D、第一電晶體342、第二電晶體344、第三電晶體346、第四電晶體352、第五電晶體354、第六電晶體356、連接桿310、低壓IC 320、高壓IC 322、第一升壓二極體372、第二升壓二極體374、第三升壓二極體376、多個引線380以及第4A圖所示的模壓封裝。
第一晶片焊盤302A、第二晶片焊盤302B、第三晶片焊盤302C和第四晶片焊盤302D相互隔開,一個接一個地按照每個晶片焊盤的一個邊緣基本呈一條直線的順序排列。第一電晶體342連接到第一晶片焊盤302A。第二電晶體344連接到第二晶片焊盤302B。第三電晶體346連接到第三晶片焊盤302C。第四電晶體352、第五電晶體354和第六電晶體356連接到第四晶片焊盤302D。
連接桿310沿晶片焊盤的對準邊緣延伸。連接桿310的第一端312在第一晶片焊盤302A的外邊緣上方延伸。連接桿310的第二端314在第四晶片焊盤302D的外邊緣上方延伸。在本發明的示例中,連接桿310更包括一個中間範圍的延伸物316,在第一端312和第二端314之間。連接桿310的中間範圍延伸物316機械連接到接地引腳,並電連接起來。中間範圍延伸物316在垂直於晶片焊盤的對準邊的水平方向(Y-方向)延伸。低壓IC 320連接到連接桿310的第一延伸區,在第一端312和第二晶片焊盤302B附近的中間範圍延伸物316之間。在本發明的示例中,藉由接合引線306,低壓IC 320電連接到第一電晶體342、第二電晶體344和第三電晶體346。高壓IC 322連接到連接桿310的第二延伸區,在第二端314和第四晶片焊盤302D附近的中間範圍延伸物316之間。在本發明的示例中,藉由接合引線308,高壓IC 322電連接到第四電晶體352、第五電晶體354和第六電晶體356。
在本發明的示例中,第4A圖所示的模壓封裝密封了第一晶片焊盤302A、第二晶片焊盤302B、第三晶片焊盤302C、第四晶片焊盤302D、第一電晶體342、第二電晶體344、第三電晶體346、第四電晶體352、第五電晶體354、第六電晶體356、連接桿310、低壓IC 320、高壓IC 322、第一升壓二極體372、第二升壓二極體374、第三升壓二極體376。在本發明的示例中,多個引線380部分嵌入到第4A圖所示的模壓封裝中。在本發明的示例中,第一端312的底面和連接桿310的第二端314,從模壓封裝498的邊緣面裸露出來。
在本發明的示例中,第一晶片焊盤302A的頂部邊緣362、364、366和368、第二晶片焊盤302B、第三晶片焊盤302C和第四晶片焊盤302D對齊。連接桿310的底部邊緣的中間部分318平行於頂部邊緣362、364、366和368。第4A圖所示的至少四個通孔488A、488B、488C和488D在連接桿310的底部邊緣的中間部分318和第一晶片焊盤302A、第二晶片焊盤302B、第三晶片焊盤302C和第四晶片焊盤302D的頂部邊緣362、364、366和368之間。第4A圖所示的至少四個通孔488A、488B、488C和488D沿長軸方向(X-方向)對齊。配置第4A圖所示的至少四個通孔488A、488B、488C和488D在模壓過程中,接收至少四個支撐引腳。
在本發明的示例中,第一接合引線304A將第一升壓二極體372連接到多個引線380的鄰近引線388上。第二接合引線304B將第二升壓二極體374連接到第一升壓二極體372。第三接合引線304C將第三升壓二極體376連接到第二升壓二極體374。在本發明的示例中,多個引線380的鄰近引線388為電源(Vcc)引腳。
在本發明的示例中,第三晶片焊盤302C的第一曲邊334和第四晶片焊盤302D的第二曲邊336,具有相同的曲率中心332。第一曲邊334的曲率半徑大於第二曲邊336的曲率半徑。
第一連接構件392將第一晶片焊盤302A連接到多個引線380的第一引線382上。第二連接構件394將第二晶片焊盤302B連接到多個引線380的第二引線384上。第三連接構件396將第三晶片焊盤302C連接到多個引線380的第三引線386上。第一連接構件392、第二連接構件394和第三連接構件396具有相同的寬度。在本發明的示例中,相同的寬度至少為1.2毫米。傳統的連接構件的寬度在0.7毫米至0.8毫米範圍內。較寬的連接構件可以提供較強的機械支撐,藉由降低電阻和增強熱耗散,提高電流性能。
在本發明的示例中,多個引線380的引線總數最多23個。傳統IPM的引線總數至少是26個。
在本發明的示例中,第4A圖為IPM 400的俯視圖,第4B圖為垂直於AA平面的剖面圖,第4C圖為側視圖。通孔488A、488B、488C和488D有助於減少濕氣的形成。
在本發明的示例中,模壓封裝498在連接桿310的第一端312附近,具有第一缺口452,在連接桿310的第二端314附近具有第二缺口454。第一和第二缺口452和454用於螺釘安裝。在本發明的示例中,第一和第二缺口452和454為半圓形。
在本發明的示例中,模壓封裝498具有絕緣缺口478A、478B和478C,在第一升壓二極體372、第二升壓二極體374和第三升壓二極體376附近。
在本發明的示例中,第3圖所示的多個引線380中至少兩個所選引線468具有長方形缺口,以用於引線擋梢。
本發明所屬技術領域中具有通常知識者將理解所述實施例可能存在修正。例如,具有長方形缺口的所選引線468的總數可以變化。本領域的技術人員可能還有其他修正,這些修正都被視為屬於本發明的範圍內,由權利要求書限定。
100‧‧‧電路圖
120‧‧‧低壓IC
122‧‧‧高壓IC
142‧‧‧第一電晶體
144‧‧‧第二電晶體
146‧‧‧第三電晶體
152‧‧‧第四電晶體
154‧‧‧第五電晶體
156‧‧‧第六電晶體
200‧‧‧IPM
202‧‧‧頂面積
300‧‧‧IPM
302A‧‧‧第一晶片焊盤
302B‧‧‧第二晶片焊盤
302C‧‧‧第三晶片焊盤
304A‧‧‧第一接合引線
304B‧‧‧第二接合引線
304C‧‧‧第三接合引線
306‧‧‧接合引線
308‧‧‧接合引線
310‧‧‧連接桿
312‧‧‧第一端
314‧‧‧第二端
316‧‧‧延伸物
318‧‧‧中間部分
322‧‧‧高壓IC
332‧‧‧曲率中心
334‧‧‧第一曲邊
336‧‧‧第二曲邊
342‧‧‧第一電晶體
344‧‧‧第二電晶體
346‧‧‧第三電晶體
352‧‧‧第四電晶體
354‧‧‧第五電晶體
356‧‧‧第六電晶體
362、364、366、368‧‧‧頂部邊緣
372‧‧‧第一升壓二極體
374‧‧‧第二升壓二極體
376‧‧‧第三升壓二極體
380‧‧‧引線
382‧‧‧第一引線
384‧‧‧第二引線
386‧‧‧第三引線
388‧‧‧鄰近引線
392‧‧‧第一連接構件
394‧‧‧第二連接構件
396‧‧‧第三連接構件
400‧‧‧IPM
452‧‧‧第一缺口
454‧‧‧第二缺口
468‧‧‧所選引線
478A、478B、478C‧‧‧絕緣缺口
488A、488B、488C、488D‧‧‧通孔
498‧‧‧模壓封裝
第1圖表示在本發明的示例中,用於驅動發動機的智慧電源模組的電路圖。
第2圖表示在本發明的示例中,驅動發動機的智慧電源模組的透視圖。
第3圖表示在本發明的示例中,驅動發動機的智慧電源模組(帶有圖中沒有表示出的模壓封裝)的仰視圖。
第4A圖表示驅動發動機的智慧電源模組的俯視圖。
第4B圖表示驅動發動機的智慧電源模組垂直於AA平面的剖面圖。
第4C圖表示驅動發動機的智慧電源模組的側視圖。
Claims (15)
- 一種用於驅動發動機的智慧電源模組,其包含: 一第一、一第二、一第三和一第四晶片焊盤; 一第一電晶體連接到該第一晶片焊盤上; 一第二電晶體連接到該第二晶片焊盤上; 一第三電晶體連接到該第三晶片焊盤上; 一第五和一第六電晶體連接到該第四晶片焊盤上; 一連接桿具有一第一端、一第二端和一中間範圍延伸物; 一低壓積體電路連接到該連接桿; 該低壓積體電路電連接到該第一、第二和第三電晶體; 一高壓積體電路連接到該連接桿; 該高壓積體電路電連接到該第四、第五和第六電晶體; 一第一、一第二和一第三升壓二極體; 複數個引線;以及 一模壓封裝包圍著該第一、第二、第三和第四晶片焊盤,該第一、第二、第三、第四、第五和第六電晶體,該連接桿、該低壓積體電路、該高壓積體電路和該第一、第二和第三升壓二極體; 其中該複數個引線部分嵌入在該模壓封裝中。
- 如申請專利範圍第1項所述之用於驅動發動機的智慧電源模組,其中該模壓封裝在該連接桿的該第一端附近設有一第一缺口,以及在該連接桿的該第二端附近設有一第二缺口。
- 如申請專利範圍第1項所述之用於驅動發動機的智慧電源模組,其中在該第一、第二和第三升壓二極體附近,該模壓封裝具有一絕緣缺口。
- 如申請專利範圍第1項所述之用於驅動發動機的智慧電源模組,其中該連接桿的該中間範圍延伸物機械並電連接到一接地引腳。
- 如申請專利範圍第1項所述之用於驅動發動機的智慧電源模組,其中該第一、第二、第三和第四晶片焊盤的頂部邊緣是共面的,其中該連接桿的底部邊緣的中間部分平行於該第一、第二、第三和第四晶片焊盤的頂部邊緣,其中至少四個通孔在該連接桿底部邊緣的中間部分和該第一、第二、第三、第四晶片焊盤的頂部邊緣之間,並且該至少四個通孔沿長軸方向對齊。
- 如申請專利範圍第5項所述之用於驅動發動機的智慧電源模組,其中配置至少四個通孔,以便在模壓過程中,接收四個支撐引腳。
- 如申請專利範圍第1項所述之用於驅動發動機的智慧電源模組,其中該低壓積體電路藉由複數個接合引線,電連接到該第一、第二和第三電晶體。
- 如申請專利範圍第1項所述之用於驅動發動機的智慧電源模組,其中該高壓積體電路藉由複數個接合引線,電連接到該第四、第五和第六電晶體。
- 如申請專利範圍第1項所述之用於驅動發動機的智慧電源模組,其中一第一接合引線將該第一升壓二極體連接到複數個引線的一個鄰近引線上,一第二接合引線將該第二升壓二極體連接到該第一升壓二極體,一第三接合引線將該第三升壓二極體連接到該第二升壓二極體。
- 如申請專利範圍第9項所述之用於驅動發動機的智慧電源模組,其中該鄰近引線機械並電連接到一電源Vcc引腳。
- 如申請專利範圍第1項所述之用於驅動發動機的智慧電源模組,其中複數個引線的至少兩個所選引線具有一長方形缺口,以便用作一引線擋梢。
- 如申請專利範圍第1項所述之用於驅動發動機的智慧電源模組,其中該第三晶片焊盤的第一曲邊和該第四焊盤的第二曲邊具有相同的曲率中心,且該第一曲邊的曲率半徑大於該第二曲邊的曲率半徑。
- 如申請專利範圍第1項所述之用於驅動發動機的智慧電源模組,其中該智慧電源模組進一步設有一第一連接構件,其將該第一晶片焊盤連接到複數個引線的第一引線,一第二連接構件,其將該第二晶片焊盤連接到複數個引線的第二引線,一第三連接構件,其將該第三晶片焊盤連接到複數個引線的第三引線,該第一、第二和第三連接構件具有相同的寬度。
- 如申請專利範圍第1項所述之用於驅動發動機的智慧電源模組,其中該低壓積體電路和該高壓積體電路直接連接到該連接桿,並且其中該智慧電源模組不包括直接連接到該連接桿上的另一個積體電路。
- 如申請專利範圍第1項所述之用於驅動發動機的智慧電源模組,其中該第一電晶體為一第一個金屬-氧化物-半導體場效應電晶體,該第二電晶體為一第二個金屬-氧化物-半導體場效應電晶體,該第三電晶體為一第三個金屬-氧化物-半導體場效應電晶體,該第四電晶體為一第四個金屬-氧化物-半導體場效應電晶體,該第五電晶體為一第五個金屬-氧化物-半導體場效應電晶體,該第六電晶體為一第六個金屬-氧化物-半導體場效應電晶體。
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TWI714204B (zh) * | 2018-08-14 | 2020-12-21 | 澳門商萬民半導體 (澳門) 有限公司 | 用於降壓衍生開關模式電源的三象限電橋 |
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CN109473414B (zh) * | 2017-09-08 | 2022-11-11 | 万国半导体(开曼)股份有限公司 | 模制智能功率模块及其制造方法 |
US10714418B2 (en) | 2018-03-26 | 2020-07-14 | Texas Instruments Incorporated | Electronic device having inverted lead pins |
CN112910320A (zh) * | 2019-12-04 | 2021-06-04 | 广东美的白色家电技术创新中心有限公司 | 高压集成电路、智能功率模块及驱动控制方法 |
US11150273B2 (en) | 2020-01-17 | 2021-10-19 | Allegro Microsystems, Llc | Current sensor integrated circuits |
US11183436B2 (en) * | 2020-01-17 | 2021-11-23 | Allegro Microsystems, Llc | Power module package and packaging techniques |
CN117673064B (zh) * | 2023-11-30 | 2024-05-03 | 海信家电集团股份有限公司 | 智能功率模块和电子设备 |
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US20030107120A1 (en) | 2001-12-11 | 2003-06-12 | International Rectifier Corporation | Intelligent motor drive module with injection molded package |
USD505400S1 (en) | 2004-03-26 | 2005-05-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
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KR101321361B1 (ko) | 2005-09-05 | 2013-10-22 | 페어차일드코리아반도체 주식회사 | 모터구동용 인버터 모듈 및 이를 구비한 모터구동장치와인버터 집적회로 패키지 |
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TWI700785B (zh) * | 2018-09-05 | 2020-08-01 | 大陸商萬民半導體(澳門)有限公司 | 馬達用模製智能電源模組 |
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