TW201740449A - Wafer manufacturing method and wafer - Google Patents
Wafer manufacturing method and wafer Download PDFInfo
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- TW201740449A TW201740449A TW105140591A TW105140591A TW201740449A TW 201740449 A TW201740449 A TW 201740449A TW 105140591 A TW105140591 A TW 105140591A TW 105140591 A TW105140591 A TW 105140591A TW 201740449 A TW201740449 A TW 201740449A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/04—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Abstract
Description
本發明係有關於晶圓的製造方法及晶圓。 The present invention relates to a method of manufacturing a wafer and a wafer.
過去，做為將有起伏的晶圓平坦化的技術，有如以下所述的方法為人所知。首先，在晶圓的一側的面塗布硬化性樹脂，將這個硬化性樹脂加工至平坦並硬化。之後，保持著硬化性樹脂的平坦面並研削晶圓的另一側的面，除去硬化性樹脂後或者是不除去，保持平坦化後的另一側的面並研削晶圓的一側的面。在以下記載中，上述技術有時會稱為「貼樹脂研削」。 In the past, as a technique for planarizing undulating wafers, methods as described below are known. First, a curable resin is applied to one surface of the wafer, and this curable resin is processed to be flat and hardened. After that, the flat surface of the curable resin is held and the other surface of the wafer is ground, and after the curable resin is removed or removed, the surface on the other side after the flattening is held and the side of the wafer is ground. . In the following description, the above technique may be referred to as "resin polishing".
然後，檢討應用這種貼樹脂研削的更進一步的平坦化(例如參照專利文獻1~4)。專利文獻1揭露了塗布厚度40μm以上但不滿300μm的硬化性樹脂。專利文獻2揭露了以10μm~200μm的厚度塗布具有特定的特性的硬化性樹脂。專利文獻3揭露吸引保持晶圓的一側的面，矯正晶圓的起伏，研削另外一側的面後，再吸引保持另外一側的面並研削一側的面，藉此兩面形成同等的研削歪斜，之後進行貼樹脂研削。專利文獻4揭露反覆進行貼樹脂研削。 Then, further flattening using such a resin-coated grinding is reviewed (for example, refer to Patent Documents 1 to 4). Patent Document 1 discloses a curable resin having a coating thickness of 40 μm or more but less than 300 μm. Patent Document 2 discloses that a curable resin having specific characteristics is applied in a thickness of 10 μm to 200 μm. Patent Document 3 discloses that the surface on the side where the wafer is held is sucked, the undulation of the wafer is corrected, and the other surface is ground, and then the other surface is sucked and the other surface is ground, thereby forming the same surface on both sides. It is skewed and then subjected to resin grinding. Patent Document 4 discloses repeated resin grinding.
專利文獻1：日本特開2006-269761號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2006-269761
專利文獻2：日本特開2009-272557號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 2009-272557
專利文獻3：日本特開2011-249652號公報 Patent Document 3: Japanese Laid-Open Patent Publication No. 2011-249652
專利文獻4：日本特開2015-8247號公報 Patent Document 4: JP-A-2015-8247
然而，半導體裝的製程中，晶圓上形成多層的金屬或絕緣膜層。形成於這個晶圓上的各層的膜厚均一性會對裝置的性能有所影響，因此在各層的形成後會以CMP(Chemical Mechanical Polishing)來進行平坦化。然而，晶圓上有起伏的話，CMP的精度下降，膜厚會形成不均一的層。特別是波常在10mm以上100mm以下的起伏會對CMP精度有很大的影響。 However, in the semiconductor package process, a plurality of layers of metal or insulating film are formed on the wafer. The film thickness uniformity of each layer formed on this wafer affects the performance of the device. Therefore, after each layer is formed, planarization is performed by CMP (Chemical Mechanical Polishing). However, if there is undulation on the wafer, the accuracy of the CMP is lowered, and the film thickness forms a non-uniform layer. In particular, the fluctuation of the wave often between 10 mm and 100 mm or less has a great influence on the CMP precision.
然而，專利文獻1~3的方法中，沒有考慮晶圓的起伏的大小而進行研削，當起伏大的情況下，可能無法充分地平坦化。因此可能會有無法充分減小起伏，不能適當地製造半導體裝置的問題。又，專利文獻4的方法中，進行複數次的貼樹脂研削，因此可能導致製造效率降低。 However, in the methods of Patent Documents 1 to 3, the grinding is performed without considering the size of the undulation of the wafer, and when the undulation is large, the flattening may not be sufficiently performed. Therefore, there is a possibility that the undulation cannot be sufficiently reduced and the semiconductor device cannot be properly manufactured. Further, in the method of Patent Document 4, the resin paste is subjected to a plurality of times, and thus the manufacturing efficiency may be lowered.
本發明的目的是提供一種的晶圓的製造方法及晶圓，即使在晶圓的起伏大的情況下，也能夠平坦化成不需要降低製造效率，也不會對半導體裝置的製造產生影響的程度。 An object of the present invention is to provide a method and a wafer for manufacturing a wafer which can be flattened to a degree that does not require a reduction in manufacturing efficiency and does not affect the manufacture of a semiconductor device even when the wafer has a large undulation. .
本發明的晶圓的製造方法，包括：樹脂層形成步驟，將硬化性樹脂塗布在從單晶棒切出來的晶圓或研磨過的晶圓的一側的面，形成樹脂層；第1平面研削步驟，透過該樹脂層保持該一側的面，平面研削該晶圓的另一側的面；樹脂層除 去步驟，除去該樹脂層；以及第2平面研削步驟，保持該另一側的面，平面研削該一側的面，其中該樹脂層形成步驟中滿足以下式(1)來形成該樹脂層。 A method for producing a wafer according to the present invention includes a resin layer forming step of applying a curable resin to a surface of a wafer cut from a single crystal rod or a surface of a polished wafer to form a resin layer; a first plane a grinding step of holding the surface of the one side through the resin layer, plane grinding the other side of the wafer; In the step of removing the resin layer, and the second planar grinding step, the surface on the other side is held, and the surface on the side is planarly ground, wherein the resin layer is formed by satisfying the following formula (1) in the resin layer forming step.
T/X>30...(1) T/X>30...(1)
X：該晶圓上的波長10mm以上100mm以下的起伏的最大振幅 X: maximum amplitude of undulations on the wafer from 10mm to 100mm
T：該樹脂層的最厚部分的厚度 T: thickness of the thickest portion of the resin layer
根據本發明，即使是會對半導體裝置製造有所影響的波長(10mm以上100mm以下)的起伏大的晶圓，也能夠藉由根據上述式(1)的厚度的樹脂層而充分地吸收一側的面的起伏。因此，藉由透過充分吸收這個起伏的樹脂層來保持一側的面，能夠在第1平面研削步驟中，將另一側的面做成充分除去起伏的平坦面。又，藉由保持起伏被充分除去的另一側的面，平面研削一側的面，能夠將這一側的面也做成充分除去起伏的平坦面。又，貼樹脂研削只要進行1次即可，所以製造效率不會下降。因此，能夠提供一種的晶圓的製造方法，即使在晶圓的起伏大的情況下，也能夠平坦化成不需要降低製造效率，也不會對半導體裝置的製造產生影響的程度。 According to the present invention, even a wafer having a large fluctuation in wavelength (10 mm or more and 100 mm or less) which affects semiconductor device fabrication can be sufficiently absorbed by the resin layer having the thickness according to the above formula (1). The ups and downs of the face. Therefore, by sufficiently absorbing the undulating resin layer and holding the one side surface, the other side surface can be made to sufficiently remove the undulating flat surface in the first plane grinding step. Further, by maintaining the surface on the other side which is sufficiently removed by the undulation, the surface on one side can be ground and the surface on this side can be made a flat surface which sufficiently removes the undulation. Further, the paste resin grinding can be carried out once, so that the production efficiency does not decrease. Therefore, it is possible to provide a method of manufacturing a wafer, which can be flattened to such an extent that it is not necessary to reduce the manufacturing efficiency and affect the manufacture of the semiconductor device even when the undulation of the wafer is large.
本發明的晶圓的製造方法中，該樹脂層形成步驟中滿足以下式(2)來形成該樹脂層為佳。 In the method for producing a wafer of the present invention, it is preferable that the resin layer is formed by satisfying the following formula (2) in the resin layer forming step.
T/X<230...(2) T/X<230...(2)
在此，樹脂層厚度太厚無法滿足上述式(2)的情況下，第1平面研削步驟中樹脂層可能會彈性變形，而無法充分除去另一側的面的起伏。又，在保持著沒有充分去除起伏的 另一側的面而進行的第2平面研削步驟下，也有可能無法充分去除一側的面的起伏。根據本發明，滿足上述式(2)來形成適當厚度的樹脂層，因此能夠抑制在第1平面研削步驟中樹脂層彈性變形，能夠將另一側的面做成充分除去起伏的平坦面。又，即使是之後的第2平面研削步驟，也能夠將一側的面形成充分除去起伏的平坦面。因此，能夠確實獲得平坦度高的晶圓。 Here, when the thickness of the resin layer is too thick to satisfy the above formula (2), the resin layer may be elastically deformed in the first plane grinding step, and the undulation of the other side surface may not be sufficiently removed. Also, while maintaining the undulations Under the second plane grinding step performed on the other side surface, the undulation of the one side surface may not be sufficiently removed. According to the present invention, since the resin layer having an appropriate thickness is formed by satisfying the above formula (2), it is possible to suppress the elastic deformation of the resin layer in the first plane grinding step, and it is possible to form the flat surface on the other side to sufficiently remove the undulation. Moreover, even in the subsequent second plane grinding step, the one surface can be formed into a flat surface that sufficiently removes the undulations. Therefore, it is possible to surely obtain a wafer having a high degree of flatness.
本發明的晶圓，其波長10mm以上100mm以下的起伏的振幅不滿0.5μm。 In the wafer of the present invention, the amplitude of the undulations having a wavelength of 10 mm or more and 100 mm or less is less than 0.5 μm.
根據本發明，因為對半導體裝置的製造有影響的波長的起伏的振幅不滿0.5μm，所以能夠提供不影響半導體裝置的製造的晶圓。 According to the present invention, since the amplitude of the fluctuation of the wavelength which affects the manufacture of the semiconductor device is less than 0.5 μm, it is possible to provide a wafer which does not affect the manufacture of the semiconductor device.
本發明的晶圓，以平坦度測量器Wafersught2(KLA-Tencor社製)的High Order Shape模式測量面形狀時，10mm×10mm面積範圍內的Shape Curvature的最大值在1.2nm/mm2以下。 In the wafer of the present invention, when the surface shape is measured by the High Order Shape mode of the flatness measuring device Wafersught 2 (manufactured by KLA-Tencor Co., Ltd.), the maximum value of the Shape Curvature in the area of 10 mm × 10 mm is 1.2 nm/mm 2 or less.
在此，「Shape Curvature」是表示晶圓的彎曲的指標，對於切出來的指定的面積範圍(本發明中是10mm×10mm)的面，表示二次近似的近似面的曲率。因此，Shape Curvature越大，晶圓就具有越大的起伏。根據本發明，因為10mm×10mm面積範圍內的Shape Curvature的最大值在1.2nm/mm2以下，所以能夠提供可適當地製造出半導體裝置的晶圓。 Here, "Shape Curvature" is an index indicating the bending of the wafer, and the surface of the cut-out specified area range (10 mm × 10 mm in the present invention) indicates the curvature of the approximate surface of the second approximation. Therefore, the larger the Shape Curvature, the larger the undulation of the wafer. According to the present invention, since the maximum value of the Shape Curvature in the area of 10 mm × 10 mm is 1.2 nm/mm 2 or less, it is possible to provide a wafer in which a semiconductor device can be suitably manufactured.
10‧‧‧保持推壓裝置 10‧‧‧Keeping the push device
11‧‧‧平板 11‧‧‧ tablet
12‧‧‧保持構件 12‧‧‧ Keeping components
121‧‧‧保持面 121‧‧‧ Keep face
20‧‧‧平面研削裝置 20‧‧‧Plane grinding device
21‧‧‧真空夾頭平台 21‧‧‧vacuum chuck platform
22‧‧‧砥石 22‧‧‧砥石
23‧‧‧定盤 23‧‧ ‧ fixing
211‧‧‧保持面 211‧‧‧ Keep face
R‧‧‧樹脂層 R‧‧‧ resin layer
R1‧‧‧平坦面 R1‧‧‧ flat surface
W‧‧‧晶圓 W‧‧‧ wafer
W1‧‧‧一側的面 Face on the W1‧‧‧ side
W2‧‧‧另一側的面 W2‧‧‧ the other side
W11、W21‧‧‧起伏 W11, W21‧‧‧ undulating
第1圖係根據本發明一實施型態的晶圓的製造方法的流程 圖。 1 is a flow chart of a method of manufacturing a wafer according to an embodiment of the present invention. Figure.
第2(A)~2(C)圖係前述晶圓的製造方法的說明圖。 The second (A) to (C) drawings are explanatory views of the method of manufacturing the wafer described above.
第3(A)~3(C)圖係前述晶圓的製造方法的說明圖，顯示接續第2圖的狀態。 The third (A) to (c) drawings are explanatory views of the method of manufacturing the wafer described above, and show the state following the second drawing.
第4圖係顯示本發明的實施例的晶圓的製造方法與Shape Curvature關係。 Fig. 4 is a view showing the relationship between the manufacturing method of the wafer and the Shape Curvature of the embodiment of the present invention.
第5圖係顯示前述實施例的晶圓的製造方法與波長為10mm以上100mm以下的起伏的最大振幅的關係。 Fig. 5 is a view showing the relationship between the method of manufacturing the wafer of the above embodiment and the maximum amplitude of the undulation of the wavelength of 10 mm or more and 100 mm or less.
第6圖係顯示前述實施例的T/X與Shape Curvature的關係。 Fig. 6 shows the relationship between T/X and Shape Curvature of the foregoing embodiment.
參照圖式說明本發明的一實施型態。 An embodiment of the present invention will be described with reference to the drawings.
[晶圓的製造方法] [Method of manufacturing wafer]
如第1圖所示，晶圓的製造方法，首先以線鋸切斷矽、SiC、GaAs、藍寶石等的單晶棒(以下單純稱為「晶棒」)，獲得複數的晶圓(步驟1：切片步驟)。接著，以研磨裝置同時對晶圓的兩面進行平坦化加工(步驟S2：研磨步驟)，進行倒角(步驟S3：倒角步驟)。此時，只有研磨步驟要將晶圓充分平坦化是非常困難的，如第2(A)圖所示，會得到一側的面W1及另一側的面W2產生起伏W11、W21的晶圓W。之後，如第1圖所示，進行貼樹脂研削步驟，包括：樹脂形成步驟(步驟S4)，在晶圓W的一側的面W1塗布硬化性樹脂來形成樹脂層R(參照第2(B)圖)；第1平面研削步驟(步驟S5)，透過樹脂層R保持一側的面W1，平面研削晶圓W的另一側的面W2；樹脂層除去步驟(步驟S6)，除去樹脂層R；以及第2平面研削步驟 (步驟S7)，保持另一側的面W2，平面研削一側的面W1。 As shown in Fig. 1, in the method of manufacturing a wafer, first, a single crystal rod (hereinafter simply referred to as "ingot") such as tantalum, SiC, GaAs, or sapphire is cut by a wire saw to obtain a plurality of wafers (Step 1) : Slicing step). Next, the both sides of the wafer are simultaneously planarized by the polishing apparatus (step S2: polishing step), and chamfering is performed (step S3: chamfering step). At this time, it is very difficult to sufficiently flatten the wafer only in the polishing step. As shown in FIG. 2(A), the wafer W1 and W21 are generated by the surface W1 on one side and the surface W2 on the other side. W. Then, as shown in Fig. 1, a resin grinding step is performed, including a resin forming step (step S4), and a resin layer R is formed by applying a curable resin to one surface W1 of the wafer W (see second (B). In the first plane grinding step (step S5), the surface W1 on one side is held by the resin layer R, and the other surface W2 of the wafer W is planarly ground. The resin layer removing step (step S6) removes the resin layer. R; and the second plane grinding step (Step S7), the surface W2 on the other side is held, and the surface W1 on the side of the plane is ground.
樹脂形成步驟中，首先測量一側的面W1及另一側的面W2的表面形狀，求出波長10mm以上且100mm以下的起伏W11的最大振幅X、晶圓W的表面厚度的不均(TTV；Total Thickness Variation)V。起伏W11及起伏W12是幾乎對稱的形狀，因此它們的最大振幅幾乎相同。接著，求出滿足以下式(1)的樹脂層R。 In the resin forming step, first, the surface shape of the one surface W1 and the other surface W2 are measured, and the maximum amplitude X of the undulation W11 having a wavelength of 10 mm or more and 100 mm or less and the unevenness of the surface thickness of the wafer W (TTV) are obtained. ;Total Thickness Variation)V. The undulations W11 and the undulations W12 are almost symmetrical shapes, so their maximum amplitudes are almost the same. Next, the resin layer R satisfying the following formula (1) is obtained.
T/X>30...(1) T/X>30...(1)
T：樹脂層R的最厚的部分的厚度 T: thickness of the thickest portion of the resin layer R
此時，樹脂層R的厚度滿足以下式(2)為佳。 At this time, it is preferable that the thickness of the resin layer R satisfies the following formula (2).
T/X<230...(2) T/X<230...(2)
又，根據以下的式(3)，來求出第1、第2平面研削步驟的另一側的面W2、一側的面W1的加工餘量最小值P。 In addition, the machining allowance minimum value P of the other surface W2 and the one surface W1 of the first and second plane grinding steps is obtained by the following formula (3).
P=X+V...(3) P=X+V...(3)
其中，最大振幅X、表面厚度不均V如果能夠從晶棒的切片條件或相同的批次的晶圓W的測量結果來推測的話，也可以該推測值。 However, the maximum amplitude X and the surface thickness unevenness V may be estimated from the slice condition of the ingot or the measurement result of the wafer W of the same lot.
接著，使用如第2(B)圖所示的保持推壓裝置10，形成樹脂層R。首先，在高平坦化的平板11上滴下要形成樹脂層R的硬化性樹脂。另一方面，如第2(B)圖的實線所示，保持構件12以保持面121吸引保持晶圓W的另一側的面W2。接著，使保持構件12下降，如第2(B)圖的二點鏈線所示，將晶圓W的一側的面W1推壓到硬化性樹脂。之後，解除保持手段12對晶圓W的壓力，在不讓晶圓W彈性變形的狀態下，使一側的 面W1上的硬化性樹脂硬化。藉由以上的步驟，接觸一側的面W1的面的相反側的面形成平坦面R1，且形成最厚的部分的厚度滿足上述式(1)、(2)的樹脂層R。 Next, the resin layer R is formed by using the holding pressing device 10 as shown in Fig. 2(B). First, a curable resin to be formed into a resin layer R is dropped on the highly flat plate 11 . On the other hand, as shown by the solid line in FIG. 2(B), the holding member 12 sucks and holds the other surface W2 of the wafer W with the holding surface 121. Next, the holding member 12 is lowered, and as shown by the two-dot chain line in the second (B) diagram, the surface W1 on one side of the wafer W is pressed against the curable resin. After that, the pressure of the holding means 12 on the wafer W is released, and the side of the wafer W is not deformed. The curable resin on the surface W1 is cured. By the above steps, the surface on the opposite side to the surface contacting the one surface W1 forms the flat surface R1, and the thickness of the thickest portion satisfies the resin layer R of the above formulas (1) and (2).
做為將硬化性樹脂塗布到晶圓W的方法，能夠採用：將晶圓W的一側的面W1朝上，滴下硬化性樹脂到一側的面W1上，旋轉晶圓W，藉此使硬化性樹脂擴展到一側的面W1全面的旋轉鍍法；在一側的面W1上配置網版，將硬化性樹脂載置於網版上，再以刮刀塗布的網版印刷法；利用靜電噴塗沈積法噴灑到一側的面W1全面的方式等來塗布硬化性樹脂後，推壓硬化性樹脂到高平坦化的平板的方法。硬化性樹脂因為熱硬化性樹脂、熱可逆性樹脂、感光性樹脂等的硬化性樹脂在加工後容易剝離這點而較佳。特別是，感光性樹脂不施加熱應力這點更佳。本實施型態中，做為硬化性樹脂會使用UV硬化性樹脂。又，做為其他的具體的硬化性樹脂的材質，能夠舉出合成橡膠或接著劑(例如臘等)等。 As a method of applying the curable resin to the wafer W, the surface W1 on one side of the wafer W may be applied upward, and the curable resin may be dropped onto the one surface W1 to rotate the wafer W. The curable resin is expanded to one side of the surface W1 by a full-scale spin coating method; a screen is placed on one side of the surface W1, a curable resin is placed on the screen, and a screen printing method using a doctor blade is applied; A method in which a curable resin is applied to a highly flattened flat plate by applying a curable resin to a surface W1 sprayed on one side by a spray deposition method. The curable resin is preferred because the curable resin such as a thermosetting resin, a thermoreversible resin, or a photosensitive resin is easily peeled off after processing. In particular, it is more preferable that the photosensitive resin does not apply thermal stress. In the present embodiment, a UV curable resin is used as the curable resin. Moreover, as a material of another specific hardening resin, a synthetic rubber, an adhesive agent (for example, a wax etc.), etc. are mentioned.
第1平面研削步驟是使用第2(C)圖所是的平面研削裝置20，平面研削另一側的面W2。首先，在真空夾頭平台21的高平坦化的保持面211上，以平坦面R1朝下的狀態載置晶圓W，真空夾頭平台21會吸引保持晶圓W。接著，如第2(C)圖的實線所示，將下面設置有砥石22的定盤23朝晶圓W的上方移動。之後，一邊旋轉定盤23一邊下降，且同時旋轉真空夾頭平台21。如第2(C)圖的二點鏈線所示，藉由砥石22與另一側的面W2接觸，平面研削另一側的面W2。然後，當加工餘量到加工餘量最小值P以上時，結束平面研削。藉由以上的步驟， 另一側的面W2會形成充分除去起伏的平坦面。 In the first plane grinding step, the plane grinding device 20 according to the second (C) drawing is used to planarly grind the other surface W2. First, on the high-flattening holding surface 211 of the vacuum chuck stage 21, the wafer W is placed with the flat surface R1 facing downward, and the vacuum chuck stage 21 sucks and holds the wafer W. Next, as shown by the solid line in the second (C) diagram, the fixed disk 23 on which the vermiculite 22 is placed below is moved upward above the wafer W. Thereafter, the stationary platen 23 is rotated while being lowered, and the vacuum chuck stage 21 is simultaneously rotated. As shown by the two-dot chain line in Fig. 2(C), the vertex 22 is brought into contact with the other surface W2 to planarly grind the other surface W2. Then, when the machining allowance reaches the machining allowance minimum value P or more, the plane grinding is ended. With the above steps, The face W2 on the other side forms a flat surface that sufficiently removes the undulations.
樹脂除去步驟如第3(A)圖所示，將形成於晶圓W的一側的面W1的樹脂層R從晶圓W剝下來。此時，可以使用溶劑化學地除去樹脂層R。 In the resin removal step, as shown in FIG. 3(A), the resin layer R formed on the surface W1 on one side of the wafer W is peeled off from the wafer W. At this time, the resin layer R can be chemically removed using a solvent.
第2平面研削步驟如第3(B)圖所示，使用與第1平面研削步驟相同的平面研削裝置20，平面研削一側的面W1。首先，在高平坦化的另一側的面W2朝下的狀態將晶圓W載置於保持面211，真空夾頭平台21會吸引保持晶圓W，如第3(B)圖的實線所示，一邊旋轉朝向晶圓W的上方移動的定盤23一邊下降，且同時旋轉真空夾頭平台21，如第3(B)圖的二點鏈線所示，平面研削一側的面W1。然後，當加工餘量到加工餘量最小值P以上時，結束平面研削。藉此，一側的面W1會形成充分除去起伏的平坦面 As shown in Fig. 3(B), the second plane grinding step uses the same plane grinding device 20 as the first plane grinding step to planarly grind the surface W1 on one side. First, the wafer W is placed on the holding surface 211 in a state where the surface W2 on the other side of the high flattening is facing downward, and the vacuum chuck stage 21 attracts and holds the wafer W, as shown by the solid line in FIG. 3(B). As shown in the figure, while rotating the fixed plate 23 moving toward the upper side of the wafer W, the vacuum chuck stage 21 is rotated, and as shown by the two-dot chain line in the third (B) view, the surface W1 on the plane of the plane is ground. . Then, when the machining allowance reaches the machining allowance minimum value P or more, the plane grinding is ended. Thereby, the surface W1 on one side forms a flat surface that sufficiently removes the undulations.
藉由以上的貼樹脂研削步驟，充分地除去了起伏W11、W21，如第3(C)圖所示，獲得了一側的面W1及另一側的面W2皆高平坦化的晶圓W。這個獲得的晶圓W上波長10mm以上100mm以下的起伏的振幅不滿0.5μm，且具有當以平坦度測量器Wafersight2的High Order Shape模式測量時，10mm×10mm面積範圍內的Shape Curvature(以下，單純稱為「Shape Curvature」)的最大值在1.2nm/mm2以下的特性。 By the above-described paste resin grinding step, the undulations W11 and W21 are sufficiently removed, and as shown in the third (C) diagram, the wafer W having the surface W1 on one side and the surface W2 on the other side is obtained. . The amplitude of the undulation of the wavelength W of 10 mm or more and 100 mm or less on the obtained wafer W is less than 0.5 μm, and has a Shape Curvature in the area of 10 mm × 10 mm when measured by the High Order Shape mode of the flatness measuring device Wafersight 2 (hereinafter, simply The maximum value called "Shape Curvature" is 1.2 nm/mm 2 or less.
接著，如第1圖所示，為了將倒角時或貼樹脂研削時產生的殘留在晶圓W上的加工變質層等除去，進行蝕刻(步驟S8：蝕刻步驟)。之後，進行鏡面研磨步驟，鏡面研磨步驟包括：使用兩面研磨裝置研磨晶圓W的兩面的一次研磨步驟 (步驟S9)；以及使用單面研磨裝置研磨晶圓W的兩面的最終研磨步驟(步驟S10)。接著，晶圓的製造方法結束。 Next, as shown in Fig. 1, in order to remove the work-affected layer or the like remaining on the wafer W during chamfering or resin grinding, etching is performed (step S8: etching step). Thereafter, a mirror polishing step is performed, the mirror polishing step comprising: grinding a grinding step on both sides of the wafer W using a two-sided polishing device (Step S9); and a final polishing step of polishing both sides of the wafer W using a single-side polishing apparatus (Step S10). Next, the method of manufacturing the wafer is completed.
[實施型態的作用效果] [effects of the implementation type]
如上述，根據上述式(1)使用考量了晶圓W的起伏W11的振幅在內的厚度的樹脂層R，進行貼樹脂研削步驟，因此能夠充分地除去一側的面W1及另一側的面W2上的起伏W11、W21。又，因為只進行1次貼樹脂研削步驟即可，所以製造效率不會下降。因此，能夠提供一種的晶圓W的製造方法，即使在晶圓W的起伏大的情況下，也能夠平坦化成不需要降低製造效率，也不會對半導體裝置的製造產生影響的程度。特別是為了滿足上述式(2)，設定了樹脂層R的厚度，因而能夠確實地獲得平坦度高的晶圓W。 As described above, the resin layer R having the thickness in consideration of the amplitude of the undulation W11 of the wafer W is subjected to the resin grinding step in accordance with the above formula (1). Therefore, the one surface W1 and the other side can be sufficiently removed. The undulations W11 and W21 on the surface W2. Further, since the resin grinding step can be performed only once, the manufacturing efficiency does not decrease. Therefore, it is possible to provide a method of manufacturing the wafer W, which can be planarized so as not to reduce the manufacturing efficiency and affect the manufacture of the semiconductor device even when the fluctuation of the wafer W is large. In particular, in order to satisfy the above formula (2), the thickness of the resin layer R is set, so that the wafer W having a high flatness can be surely obtained.
[變形例] [Modification]
本發明並不只限定於上述實施型態，在不脫離本發明的要旨的範圍內能夠做各種改良及設計的變更，此外，本發明實施時的具體的步驟及構造等，在能夠達成本發明的目的的範圍內也可以是其他的構造等。 The present invention is not limited to the above-described embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention, and the specific steps and structures of the present invention can be achieved. Other configurations may be used within the scope of the purpose.
例如，也可以不進行研磨步驟，而以至少滿足上述式(1)的條件來進行貼樹脂研削步驟。即使在這個情況下，也能夠獲得具有上述特性的晶圓W。又，樹脂層R的除去，可以不用剝離，而利用做為樹脂層除去步驟的第2平面研削步驟中的研削來除去。 For example, the resin grinding step may be carried out at a condition that at least the above formula (1) is satisfied without performing the polishing step. Even in this case, the wafer W having the above characteristics can be obtained. Further, the removal of the resin layer R can be removed by grinding in the second plane grinding step as the resin layer removing step without peeling off.
[實施例] [Examples]
接著，透過實施例更詳細地說明本發明，但本發 明並不受到這些例子的任何限制。 Next, the present invention will be described in more detail by way of examples, but the present invention Ming is not subject to any restrictions on these examples.
[晶圓的製造方法、Shape Curvature及波長10mm以上100mm以下的起伏的最大振幅的關係] [Method of manufacturing wafer, Shape Curvature, and maximum amplitude of undulations of wavelengths of 10 mm or more and 100 mm or less]
[晶圓的製造方法] [Method of manufacturing wafer]
[實施例1] [Example 1]
首先，進行第1圖所示的切片步驟，準備直徑300mm且厚度約900μm的晶圓。接著，對這些晶圓進行研磨步驟、倒角步驟。研磨步驟中，使用濱松產業株式會社製的研磨裝置(HAMAI32BN)，不使用研磨布，以含有氧化鋁砥粒的研磨劑來進行研磨。然後，使用株式會社Kobelco科研社製作的晶圓平坦度.形狀測量器(SBW)，測量晶圓的一側的面的形狀，進行頻率分析，藉此求出研磨步驟後的波長10mm以上100mm以下的起伏的最大振幅X。如表1所示，最大振幅X是0.9μm。 First, the dicing step shown in Fig. 1 was carried out to prepare a wafer having a diameter of 300 mm and a thickness of about 900 μm. Next, the wafer is subjected to a grinding step and a chamfering step. In the polishing step, a polishing apparatus (HAMAI32BN) manufactured by Hamamatsu Industrial Co., Ltd. was used, and polishing was performed using an abrasive containing alumina crucible without using a polishing cloth. Then, using a wafer flatness and shape measuring device (SBW) manufactured by Kobelco Scientific Research Co., Ltd., the shape of the surface on one side of the wafer was measured, and frequency analysis was performed to obtain a wavelength of 10 mm or more and 100 mm or less after the polishing step. The maximum amplitude of the undulation X. As shown in Table 1, the maximum amplitude X was 0.9 μm.
之後，進行貼樹脂研削步驟。在樹脂層形成步驟中，塗布UV硬化樹脂，以UV照射來硬化，藉此形成樹脂層。如表1所示，樹脂層的最厚部分的厚度T是80μm，T/X是滿足上述式(1)的88.9。另外，厚度T是使用三豐株式會社製的線性測量計(LGF)，測量貼樹脂前的晶圓的厚度及貼樹脂後的的晶圓及樹脂的合計厚度，從它們的差求出。然後，進行第1 平面研削步驟、樹脂層除去步驟、第2硼面研削步驟。第1、第2平面研削步驟中，使用株式會社Disco製的研削裝置(DFG8360)，分別以加工餘量20μm來進行平面研削。之後，從蝕刻步驟進行到鏡面研磨步驟。 Thereafter, a resin grinding step is applied. In the resin layer forming step, a UV hardening resin is applied and hardened by UV irradiation, thereby forming a resin layer. As shown in Table 1, the thickness T of the thickest portion of the resin layer was 80 μm, and T/X was 88.9 satisfying the above formula (1). In addition, the thickness T is a linear measuring instrument (LGF) manufactured by Mitutoyo Corporation, and the thickness of the wafer before the resin is applied and the total thickness of the wafer and the resin after the resin is applied are determined from the difference. Then, proceed to the first The planar grinding step, the resin layer removing step, and the second boron surface grinding step. In the first and second plane grinding steps, a grinding machine (DFG8360) manufactured by Disco Co., Ltd. was used, and planar grinding was performed with a machining allowance of 20 μm. Thereafter, the etching step is performed to the mirror polishing step.
[實施例2] [Embodiment 2]
首先，切片步驟，準備直徑300mm且厚度約900μm的晶圓。如表1所示，切片步驟後的波長10mm以上100mm以下的起伏的最大振幅X是1.5μm。然後，不進行研磨步驟，如表1所示，除了形成T/X為滿足上述式(1)的53.3的樹脂層以外，與實施例1相同的條件下，從貼樹脂研削步驟進行到鏡面研磨步驟。 First, in the slicing step, a wafer having a diameter of 300 mm and a thickness of about 900 μm was prepared. As shown in Table 1, the maximum amplitude X of the undulations having a wavelength of 10 mm or more and 100 mm or less after the dicing step was 1.5 μm. Then, the polishing step was not carried out, and as shown in Table 1, except that the resin layer having the T/X of 53.3 satisfying the above formula (1) was formed, the same procedure as in Example 1 was carried out, from the resin grinding step to the mirror polishing. step.
[比較例1] [Comparative Example 1]
如表1所示，除了形成T/X為滿足上述式(1)的27.8的樹脂層以外，與實施例1相同的條件下，從切片步驟進行到鏡面研磨步驟。 As shown in Table 1, except for the formation of a resin layer in which T/X was 27.8 satisfying the above formula (1), the same steps as in Example 1 were carried out from the slicing step to the mirror polishing step.
[比較例2] [Comparative Example 2]
如表1所示，進行不形成樹脂的研削來取代貼樹脂研削步驟，也就是說只會執行貼樹脂研削步驟中的第1、第2平面研削步驟，除了這點之外，與實施例1相同的條件下，從切片步驟進行到鏡面研磨步驟。另外，第1、第2平面研削步驟中的加工餘量是20μm。 As shown in Table 1, the grinding without forming the resin was performed instead of the resin grinding step, that is, only the first and second plane grinding steps in the resin grinding step were performed, except for this, and Example 1 Under the same conditions, the step from the slicing step to the mirror grinding step. Further, the machining allowance in the first and second plane grinding steps was 20 μm.
[評價] [Evaluation]
以實施例1、2、比較1、2的條件分別處理各4片的晶圓，然後進行評價。 Each of the four wafers was processed under the conditions of Examples 1, 2, and 1, 2, and then evaluated.
[Shape Curvature] [Shape Curvature]
在平坦度測量器Wafersight2(KLA-Tencor社製)的High Order Shape模式下測量各晶圓的面形狀，評價Shape Curvature的最大值。評價結果顯示於第4圖。如第4圖所示，T/X滿足上述式(1)的實施例1、2中，任一者都在1.2nm/mm2以下，T/X越大值就越小。另一方面，T/X不滿足上述式(1)的比較例1及部進行貼樹脂研削步驟的比較例2中，任一者都超過1.2nm/mm2。 The surface shape of each wafer was measured in a High Order Shape mode of a flatness measuring instrument Wafersight 2 (manufactured by KLA-Tencor Co., Ltd.), and the maximum value of Shape Curvature was evaluated. The evaluation results are shown in Figure 4. As shown in Fig. 4, in Examples 1 and 2 in which T/X satisfies the above formula (1), either of them is 1.2 nm/mm 2 or less, and the larger the value of T/X is, the smaller the value is. On the other hand, in Comparative Example 1 in which T/X did not satisfy the above formula (1) and Comparative Example 2 in which the resin grinding step was carried out, either of them exceeded 1.2 nm/mm 2 .
[波長10mm以上100mm以下的起伏的最大振幅] [Maximum amplitude of undulations with a wavelength of 10 mm or more and 100 mm or less]
與求出實施例1的研磨步驟後的起伏的最大值X時相同的方法，求出波長10mm以上100mm以下的起伏的最大振幅並評價。評價結果顯示於第5圖。如第5圖所示，T/X滿足上述式(1)的實施例1、2中，任一者都不滿0.5μm，T/X越大值就越小。另一方面，T/X不滿足上述式(1)的比較例1及部進行貼樹脂研削步驟的比較例2中，任一者都超過0.5μm。 The maximum amplitude of the undulations having a wavelength of 10 mm or more and 100 mm or less was determined and evaluated in the same manner as in the case of obtaining the maximum value X of the undulation after the polishing step of Example 1. The evaluation results are shown in Figure 5. As shown in Fig. 5, in the first and second embodiments in which T/X satisfies the above formula (1), either one is less than 0.5 μm, and the larger the value of T/X is, the smaller the value is. On the other hand, in Comparative Example 1 in which T/X did not satisfy the above formula (1) and Comparative Example 2 in which the resin grinding step was performed, either of them exceeded 0.5 μm.
[總結] [to sum up]
從以上內容能夠確認，從切片步驟進行到研磨步驟為止的晶圓、不進行研磨步驟的晶圓中的任一者，以T/X滿足上述式(1)的條件進行貼樹脂研削步驟，能夠提供製造效率及平坦度高，且可適當地製作出半導體裝置的晶圓。另外，本實施例中，雖然只評價了鏡面研磨步驟後的晶圓，但也能夠推測出貼樹脂研磨步驟(比較例2中是第1、第2平面研削步驟)一結束後的形狀與第4圖及第5圖所顯示的幾乎相同。這個理由是因為蝕刻步驟及鏡面研磨步驟中的加工餘量相比於研磨步 驟或貼樹脂研削步驟來說非常地小，所以鏡面研磨步驟後的平坦度幾乎等於貼樹脂研削步驟一結束後的平坦度。 From the above, it can be confirmed that any of the wafer from the dicing step to the polishing step and the wafer that is not subjected to the polishing step can be subjected to a resin grinding step under the condition that T/X satisfies the above formula (1). A wafer having a high manufacturing efficiency and flatness and capable of fabricating a semiconductor device can be suitably produced. Further, in the present embodiment, only the wafer after the mirror polishing step was evaluated, but the shape and the shape after the completion of the resin polishing step (the first and second plane grinding steps in Comparative Example 2) can be estimated. The figures shown in Figure 4 and Figure 5 are almost identical. This reason is because the machining allowance in the etching step and the mirror polishing step is compared to the grinding step. The step of the resin or the resin grinding step is extremely small, so the flatness after the mirror polishing step is almost equal to the flatness after the end of the resin grinding step.
[T/X的容許範圍的檢討] [Review of the allowable range of T/X]
除了以複數的等級變動樹脂層的厚度外，對各個等級各2片的晶圓進行與上述實施例1相同的處理，評價Shape Curvature的最大值。結果顯示於第6圖。如第6圖所示，確認到當T/X超過30且不滿230的話，值就會在1.2nm/mm2以下。 The wafers of each of the two grades were subjected to the same treatment as in the above-described first embodiment except that the thickness of the resin layer was varied in a plurality of grades, and the maximum value of the Shape Curvature was evaluated. The results are shown in Figure 6. As shown in Fig. 6, it was confirmed that when T/X exceeds 30 and is less than 230, the value is 1.2 nm/mm 2 or less.
10‧‧‧保持推壓裝置 10‧‧‧Keeping the push device
11‧‧‧平板 11‧‧‧ tablet
12‧‧‧保持構件 12‧‧‧ Keeping components
121‧‧‧保持面 121‧‧‧ Keep face
20‧‧‧平面研削裝置 20‧‧‧Plane grinding device
21‧‧‧真空夾頭平台 21‧‧‧vacuum chuck platform
22‧‧‧砥石 22‧‧‧砥石
23‧‧‧定盤 23‧‧ ‧ fixing
211‧‧‧保持面 211‧‧‧ Keep face
R‧‧‧樹脂層 R‧‧‧ resin layer
R1‧‧‧平坦面 R1‧‧‧ flat surface
W‧‧‧晶圓 W‧‧‧ wafer
W1‧‧‧一側的面 Face on the W1‧‧‧ side
W2‧‧‧另一側的面 W2‧‧‧ the other side
W11、W21‧‧‧起伏 W11, W21‧‧‧ undulating
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| JP7088125B2 (en) * | 2019-05-14 | 2022-06-21 | 信越半導体株式会社 | Coating thickness measurement method and grinding method |
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