TW201737370A - Electronic device package tape - Google Patents

Electronic device package tape Download PDF

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Publication number
TW201737370A
TW201737370A TW106109581A TW106109581A TW201737370A TW 201737370 A TW201737370 A TW 201737370A TW 106109581 A TW106109581 A TW 106109581A TW 106109581 A TW106109581 A TW 106109581A TW 201737370 A TW201737370 A TW 201737370A
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Taiwan
Prior art keywords
tape
adhesive
metal layer
adhesive layer
electronic device
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TW106109581A
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Chinese (zh)
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TWI632625B (en
Inventor
Toru Sano
Hiromitsu Maruyama
Jirou Sugiyama
Masami Aoyama
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Furukawa Electric Co Ltd
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Publication of TW201737370A publication Critical patent/TW201737370A/en
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Publication of TWI632625B publication Critical patent/TWI632625B/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/08—Homopolymers or copolymers of acrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Packages (AREA)

Abstract

Provided is an electronic device package tape such that a metal layer can be held on a base tape during precutting and the base tape can be satisfactorily detached during use. An electronic device package tape 1 of the present invention is characterized by comprising: a base tape 2 that has a pressure-sensitive adhesion face; a metal layer 3 that has a predetermined planar shape and is disposed on the pressure-sensitive adhesion face of the base tape 2; a bonding adhesive layer 4 that has a predetermined planar shape and is laminated to the metal layer 3 on the side of the metal layer 3 opposite the base tape 2 side; and a pressure-sensitive adhesive tape 5 that covers the bonding adhesive layer 4 and has a label part 5a, which has a predetermined planar shape and is disposed so as to come into contact with the base tape 2 in the periphery of the bonding adhesive layer 4. The electronic device package tape 1 is further characterized in that the adhesive power P1 between the base tape 2 and the metal layer 3 is 0.01-0.5N/25mm, the adhesive power P2 between the base tape 2 and the pressure-sensitive adhesive tape 5 is 0.01-0.5N/25mm, and P1/P2 is 0.1-10.

Description

電子裝置封裝用膠帶 Tape for electronic device packaging

本發明係關於電子裝置封裝用膠帶，特別是關於具有金屬層之電子裝置封裝用膠帶。 The present invention relates to an adhesive tape for electronic device packaging, and more particularly to an electronic device packaging tape having a metal layer.

近年來，行動電話或筆記型PC等之電子機器，要求更加薄型化/小型化。因而，為了將搭載於電子機器之半導體封裝等之電子裝置封裝薄型化/小型化，係使電子裝置或電路基板之電極數增加，進而亦使節距變窄。如此之電子裝置封裝中，例如係有覆晶(FC；Flip Chip)構裝封裝。 In recent years, electronic devices such as mobile phones and notebook PCs have been required to be thinner and smaller. Therefore, in order to reduce the thickness and size of an electronic device package such as a semiconductor package mounted on an electronic device, the number of electrodes of the electronic device or the circuit board is increased, and the pitch is further narrowed. In such an electronic device package, for example, a flip chip (FC) package is provided.

於覆晶構裝封裝中，如上所述，電極數目增加或者窄節距化，因此發熱量增加係成為問題。因而，作為覆晶構裝封裝之散熱構造，提出有於電子裝置背面隔著接著劑層而設置金屬層(例如參照專利文獻1)。 In the flip chip package, as described above, the number of electrodes is increased or the pitch is narrowed, so that an increase in heat generation is a problem. Therefore, as a heat dissipation structure of the flip chip package, it is proposed to provide a metal layer on the back surface of the electronic device via the adhesive layer (see, for example, Patent Document 1).

又，於覆晶構裝封裝中，可能有電子裝置之線膨脹率與電路基板之線膨脹率大幅相異的情況。此時，於電子裝置封裝之製造過程中，中間製品被加熱及冷卻時，電子裝置與電路基板之間會產生膨脹量及收縮量的差 異。因為該差異，電子裝置封裝中會產生翹曲。作為抑制如此之翹曲的構造，亦提出於電子裝置之背面隔著接著劑層而設置金屬層(例如參照專利文獻2)。 Further, in the flip chip package, there is a possibility that the linear expansion ratio of the electronic device greatly differs from the linear expansion ratio of the circuit board. At this time, in the manufacturing process of the electronic device package, when the intermediate product is heated and cooled, the difference between the expansion amount and the shrinkage amount between the electronic device and the circuit substrate occurs. different. Because of this difference, warpage occurs in the electronic device package. As a structure for suppressing such warpage, it is also proposed to provide a metal layer on the back surface of the electronic device via the adhesive layer (see, for example, Patent Document 2).

進一步地，於覆晶構裝封裝中，亦提出於電子裝置之背面隔著接著劑層而設置金屬層，且使用該金屬層作為雷射標記用之保護層(例如參照專利文獻3)。 Further, in the flip chip package, it is also proposed to provide a metal layer on the back surface of the electronic device via the adhesive layer, and use the metal layer as a protective layer for laser marking (see, for example, Patent Document 3).

又，近年來，有於半導體晶片上進一步層合相同尺寸之其他半導體晶片，進行三次元構裝的情況。此處，為了可於半導體晶片上層合相同尺寸之其他半導體晶片，於兩者之間必須預先層合間隔件。其係因於半導體晶片中之電極墊部分上亦會層合其他半導體晶片之故。作為前述間隔件，提出了使用附接著劑層之金屬層(例如參照專利文獻4)。專利文獻4中記載間隔件係藉由如下之步驟而設置：將具有至少一面具備接著劑層之金屬層的間隔件用接著薄片，以接著劑層為貼合面而貼合於切割薄片之步驟；切割間隔件用接著薄片，而形成具備接著劑層之晶片狀的間隔件之步驟；將間隔件以針頂起，且將頂起之間隔件，藉由自切割薄片一起剝離接著劑層與半導體晶片時所使用的拾取裝置，與接著劑層一起自切割薄片剝離之步驟；與隔著接著劑層將間隔件固定於被黏著體之步驟。 Further, in recent years, other semiconductor wafers of the same size are further laminated on a semiconductor wafer, and a three-dimensional assembly is performed. Here, in order to laminate other semiconductor wafers of the same size on the semiconductor wafer, the spacers must be laminated in advance between the two. This is due to the fact that other semiconductor wafers are also laminated on the electrode pad portion of the semiconductor wafer. As the spacer, a metal layer using an adhesive layer has been proposed (for example, see Patent Document 4). Patent Document 4 discloses that the spacer is provided by a step of bonding a spacer having a metal layer having at least one surface of the adhesive layer to the subsequent sheet, and bonding the adhesive layer to the dicing sheet with the adhesive layer as a bonding surface. a step of forming a wafer-shaped spacer having an adhesive layer by using a subsequent sheet; cutting the spacer by a needle, and peeling the spacer, by peeling off the adhesive layer together with the self-cut sheet The pick-up device used in the semiconductor wafer is a step of peeling off the cut sheet together with the adhesive layer; and the step of fixing the spacer to the adherend via the adhesive layer.

〔先前技術文獻〕 [Previous Technical Literature] 〔專利文獻〕 [Patent Document]

〔專利文獻1〕日本特開2007-235022號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-235022

〔專利文獻2〕日本專利第5487847號公報 [Patent Document 2] Japanese Patent No. 5487847

〔專利文獻3〕日本專利第5419226號公報 [Patent Document 3] Japanese Patent No. 5419226

〔專利文獻4〕日本專利第4954569號公報 [Patent Document 4] Japanese Patent No. 4954569

如上所述，附接著劑層之金屬層，有用於各種電子裝置封裝，如專利文獻4所揭示，若能夠使用既有的裝置拾取，而固定於被黏著體，則為便利。 As described above, the metal layer of the adhesive layer is used for various electronic device packages. As disclosed in Patent Document 4, it is convenient if it can be picked up by an existing device and fixed to the adherend.

此處，以往之一般的拾取裝置中，係於黏著保持晶圓W或附有固晶層之晶圓的切割膠帶D之黏著面的周緣部，貼合環狀保持構件之環狀框架R，將該環狀框架R固定於裝置，藉以將晶圓W設置於拾取裝置(參照圖5(C))。因此，切割膠帶D於使用時，必須被切斷為對應於環狀框架R的形狀。 Here, in the conventional pick-up device, the annular frame R of the annular holding member is bonded to the peripheral edge portion of the adhesive surface of the dicing tape D to which the wafer W or the wafer having the solid crystal layer is adhered. The annular frame R is fixed to the apparatus, whereby the wafer W is placed on the pickup device (see FIG. 5(C)). Therefore, the dicing tape D must be cut to correspond to the shape of the annular frame R when it is used.

因而，若可預先準備於基材膠帶上依序設置金屬層、接著劑層、黏著膠帶，該黏著膠帶被切斷為對應於環狀框架之形狀，且金屬層及接著劑層亦對應於其而被切斷為特定形狀(亦即，經預切(precut)加工)的電子裝置封裝用膠帶(參照圖1、2)，並於使用時剝離基材膠帶而將環狀框架貼合於黏著膠帶，則便利性非常良好。但是，如此構成之電子裝置封裝用膠帶，並未揭示於上述專利文獻。 Therefore, if the metal layer, the adhesive layer, and the adhesive tape are sequentially provided on the base tape, the adhesive tape is cut into a shape corresponding to the annular frame, and the metal layer and the adhesive layer correspond to the same. And the tape for electronic device packaging cut into a specific shape (that is, precut processing) (refer to FIGS. 1 and 2), and the substrate tape is peeled off during use to bond the ring frame to the adhesive. Tape, the convenience is very good. However, the tape for electronic device packaging thus constituted is not disclosed in the above patent document.

如上述構成之電子裝置封裝用膠帶，必須以 可於黏著膠帶之周緣部貼合環狀框架的方式，將金屬層及接著劑層切斷為小於黏著膠帶之形狀。欲成為如此之構成，例如可首先於長形薄膜狀之基材膠帶上依序設置長形之金屬箔及接著劑薄膜，將金屬箔及接著劑薄膜切斷而形成特定形狀之金屬層及接著劑層，去除特定形狀周邊之不要的部分後，將長形薄膜狀之黏著膠帶貼合於接著劑層側，將黏著膠帶與金屬層及接著劑層對合位置而切斷為對應於環狀框架的形狀，且將不要的部分去除。 The tape for electronic device packaging constructed as described above must be The metal layer and the adhesive layer can be cut into a shape smaller than the adhesive tape so that the annular frame can be bonded to the peripheral portion of the adhesive tape. In order to achieve such a configuration, for example, an elongated metal foil and an adhesive film may be sequentially disposed on a long film-form substrate tape, and the metal foil and the adhesive film may be cut to form a metal layer of a specific shape and then After removing the unnecessary portion around the specific shape, the adhesive layer is bonded to the adhesive layer side, and the adhesive tape is cut into a ring-shaped position corresponding to the metal layer and the adhesive layer to correspond to the ring shape. The shape of the frame and the unwanted parts are removed.

此時，金屬層必須被保持於基材膠帶，因此基材膠帶之與金屬層鄰接的面，必須具有某種程度之黏著力。然而，如上所述，相較於金屬層及接著劑層，黏著膠帶為較大的形狀，因此存在有黏著膠帶之黏著面與基材膠帶的具有黏著力之面貼合的部分。因此，使用時雖欲剝離基材膠帶，係有無法順利剝離之虞。 At this time, the metal layer must be held on the substrate tape, so the surface of the substrate tape adjacent to the metal layer must have a certain degree of adhesion. However, as described above, the adhesive tape has a larger shape than the metal layer and the adhesive layer, and therefore there is a portion where the adhesive surface of the adhesive tape is bonded to the adhesive surface of the substrate tape. Therefore, in order to peel off the base tape at the time of use, there is a flaw that cannot be smoothly peeled off.

因而，本案發明之目的為提供於預切加工時，可將金屬層保持於基材膠帶，而且使用時可將基材膠帶良好地剝離之電子裝置封裝用膠帶。 Therefore, the object of the present invention is to provide an electronic device packaging tape which can hold a metal layer on a substrate tape during pre-cut processing and which can peel the substrate tape well.

為了解決以上課題，本發明之電子裝置封裝用膠帶其特徵為具有：具有黏著面之基材膠帶；設置於前述基材膠帶之前述黏著面上，且具有特定平面形狀之金屬層；於前述金屬層之與前述基材膠帶側相反側與前述金屬層層合而設置，且具有特定平面形狀之接著劑層；與具有 基材薄膜與黏著劑層之黏著膠帶，且前述黏著膠帶，具有被覆前述接著劑層，且以於前述接著劑層之周圍接觸於前述基材膠帶的方式設置之特定平面形狀的標籤部，前述基材膠帶與前述金屬層之黏著力P1為0.01~0.5N/25mm，前述基材膠帶與前述黏著膠帶之黏著力P2為0.01~0.5N/25mm，前述基材膠帶與前述金屬層之黏著力P1及前述基材膠帶與前述黏著膠帶之黏著力P2的比P1/P2，為0.1~10。 In order to solve the above problems, the tape for electronic device packaging of the present invention is characterized in that: a base tape having an adhesive surface; a metal layer provided on the adhesive surface of the base tape and having a specific planar shape; An adhesive layer provided on the side opposite to the substrate tape side and laminated with the metal layer, and having a specific planar shape; The adhesive tape of the base film and the adhesive layer, and the adhesive tape has a label portion that covers the adhesive layer and is provided in a specific planar shape so that the periphery of the adhesive layer contacts the base tape. The adhesive force P1 of the substrate tape and the metal layer is 0.01~0.5N/25mm, and the adhesion force P2 of the substrate tape and the adhesive tape is 0.01~0.5N/25mm, and the adhesion between the substrate tape and the metal layer is The ratio P1/P2 of P1 and the adhesion force P2 of the substrate tape and the adhesive tape is 0.1 to 10.

上述電子裝置封裝用膠帶，前述金屬層較佳含有銅或鋁。 In the above tape for electronic device packaging, the metal layer preferably contains copper or aluminum.

上述電子裝置封裝用膠帶，前述基材膠帶，較佳具有樹脂薄膜與設置於前述樹脂薄膜之單面的基材膠帶用黏著劑層。 In the above-described tape for electronic device packaging, the substrate tape preferably has a resin film and an adhesive layer for a base tape provided on one surface of the resin film.

又，電子裝置封裝用膠帶，前述基材膠帶用黏著劑層，較佳含有包含CH2=CHCOOR(式中，R為碳數4~18之烷基)表示之丙烯酸酯、含羥基之單體、與異氰酸酯化合物所構成的丙烯酸系聚合物。 Further, the adhesive tape for electronic device packaging, the adhesive layer for a base tape preferably contains an acrylate or a hydroxyl group-containing monomer represented by CH 2 =CHCOOR (wherein R is an alkyl group having 4 to 18 carbon atoms). An acrylic polymer composed of an isocyanate compound.

又，上述電子裝置封裝用膠帶，前述接著劑層較佳含有(A)環氧樹脂、(B)硬化劑、(C)丙烯酸樹脂或苯氧樹脂、及(D)經表面處理之無機填充材。 Further, in the above-described tape for electronic device packaging, the adhesive layer preferably contains (A) an epoxy resin, (B) a curing agent, (C) an acrylic resin or a phenoxy resin, and (D) a surface-treated inorganic filler. .

又，電子裝置封裝用膠帶，前述黏著劑層，較佳含有包含CH2=CHCOOR(式中，R為碳數4~18之烷基)表示之丙烯酸酯、含羥基之單體、與分子內具有自由基反應性碳-碳雙鍵之異氰酸酯化合物所構成的丙烯酸系 聚合物。 Further, in the tape for electronic device packaging, the adhesive layer preferably contains an acrylate, a hydroxyl group-containing monomer, and an intramolecular group, which are represented by CH 2 =CHCOOR (wherein, R is an alkyl group having 4 to 18 carbon atoms). An acrylic polymer composed of an isocyanate compound having a radical-reactive carbon-carbon double bond.

依照本發明，於預切加工時，可將金屬層保持於基材膠帶，而且使用時可將基材膠帶良好地剝離。 According to the present invention, the metal layer can be held on the substrate tape during the pre-cut processing, and the substrate tape can be peeled off well in use.

1‧‧‧電子裝置封裝用膠帶 1‧‧‧Electronic device packaging tape

2‧‧‧基材膠帶 2‧‧‧Substrate tape

3‧‧‧金屬層 3‧‧‧metal layer

4‧‧‧接著劑層 4‧‧‧ adhesive layer

5‧‧‧黏著膠帶 5‧‧‧Adhesive tape

5a‧‧‧標籤部 5a‧‧‧Label

5b‧‧‧周邊部 5b‧‧‧ peripherals

〔圖1〕(a)為示意顯示本發明之實施形態的電子裝置封裝用膠帶之構造的平面圖、(b)為該截面圖。 [ Fig. 1] (a) is a plan view schematically showing a structure of an adhesive tape for electronic device packaging according to an embodiment of the present invention, and (b) is a cross-sectional view.

〔圖2〕示意顯示本發明之實施形態的電子裝置封裝用膠帶之構造的透視圖。 Fig. 2 is a perspective view schematically showing the structure of an adhesive tape for electronic device according to an embodiment of the present invention.

〔圖3〕示意顯示本發明之實施形態的電子裝置封裝用膠帶之製造方法的說明圖，(A)為顯示金屬層之貼合步驟的長邊方向截面圖、(B)為顯示接著劑層之貼合步驟的長邊方向截面圖、(C)為顯示預切步驟之短邊方向截面圖、(D)為顯示不要部分之去除步驟的透視圖。 FIG. 3 is an explanatory view showing a method of manufacturing an adhesive tape for electronic device according to an embodiment of the present invention, wherein (A) is a longitudinal cross-sectional view showing a bonding step of a metal layer, and (B) is an adhesive layer. The longitudinal direction cross-sectional view of the bonding step, (C) is a short-side cross-sectional view showing the pre-cutting step, and (D) is a perspective view showing the removal step of the unnecessary portion.

〔圖4〕示意顯示本發明之實施形態的電子裝置封裝用膠帶之製造方法的說明圖，(A)為顯示黏著膠帶之貼合步驟的短邊方向截面圖、(B)為顯示預切步驟之短邊方向截面圖、(C)為顯示不要部分之去除步驟的短邊方向截面圖。 FIG. 4 is an explanatory view showing a method of manufacturing an adhesive tape for electronic device according to an embodiment of the present invention, wherein (A) is a cross-sectional view showing a bonding step of the adhesive tape, and (B) is a pre-cutting step. The cross-sectional view in the short side direction and (C) are cross-sectional views in the short side direction showing the removal step of the unnecessary portion.

〔圖5〕示意說明本發明之實施形態的電子裝置封裝用膠帶之使用方法的截面圖。 Fig. 5 is a cross-sectional view schematically showing a method of using an adhesive tape for electronic device according to an embodiment of the present invention.

〔圖6〕示意說明本發明之實施形態的電子裝置封裝用膠帶之使用方法的截面圖。 Fig. 6 is a cross-sectional view schematically showing a method of using an adhesive tape for electronic device according to an embodiment of the present invention.

〔圖7〕示意顯示使用本發明之實施形態的電子裝置封裝用膠帶之電子裝置封裝的構造之截面圖。 Fig. 7 is a cross-sectional view showing the structure of an electronic device package using the tape for electronic device packaging according to the embodiment of the present invention.

以下詳細說明本發明之實施形態。 Hereinafter, embodiments of the present invention will be described in detail.

圖1為顯示本發明之實施形態的電子裝置封裝用膠帶1之截面圖。該電子裝置封裝用膠帶1，具備具有黏著面之基材膠帶2，且於該基材膠帶2之黏著面上，具有特定平面形狀之金屬層3；於金屬層3之與基材膠帶2側相反側與金屬層3層合而設置，且具有特定平面形狀之接著劑層4；與具有被覆接著劑層4，且以於接著劑層4之周圍接觸於基材膠帶2的方式設置之特定平面形狀的標籤部5a與圍繞該標籤部5a之外側的周邊部5b之黏著膠帶5。 Fig. 1 is a cross-sectional view showing an adhesive tape 1 for an electronic device according to an embodiment of the present invention. The electronic device encapsulating tape 1 is provided with a base tape 2 having an adhesive surface, and has a metal layer 3 having a specific planar shape on the adhesive surface of the base tape 2; on the side of the metal layer 3 and the substrate tape 2 The adhesive layer 4 having the opposite side and the metal layer 3 laminated and having a specific planar shape; and the specific setting provided with the adhesive layer 4 and the periphery of the adhesive layer 4 in contact with the substrate tape 2 The label portion 5a of the planar shape and the adhesive tape 5 surrounding the peripheral portion 5b on the outer side of the label portion 5a.

標籤部5a，具有對應於切割用之環狀框架R的形狀。對應於切割用之環狀框架R的形狀之形狀，較佳為與環狀框架R之內側大致相同形狀且係大於環狀框架R內側之大小的相似形。又，並不一定必須為圓形，但較佳為接近圓形之形狀、更佳為圓形。周邊部5b，包含完全包圍標籤部5a之外側的形態、與如圖示之未完全包圍之形態。再者，亦可不設置周邊部5b。 The label portion 5a has a shape corresponding to the annular frame R for dicing. The shape corresponding to the shape of the annular frame R for cutting is preferably substantially the same shape as the inner side of the annular frame R and is similar to the inner shape of the annular frame R. Further, it is not necessarily required to be circular, but it is preferably a shape close to a circle, and more preferably a circle. The peripheral portion 5b includes a form that completely surrounds the outer side of the label portion 5a and a form that is not completely surrounded as shown. Furthermore, the peripheral portion 5b may not be provided.

接著劑層4具有特定之平面形狀，該平面形狀，以將 環狀框架R貼合於黏著膠帶5之標籤部5a的周緣部，而能夠以拾取裝置之頂起構件頂起的方式(參照圖6(C))，而成為小於標籤部5a之形狀。接著劑層4，較佳為與標籤部5a大致相同形狀且係小於標籤部5a之大小的相似形。接著劑層4，並不一定必須為圓形，但較佳為接近圓形之形狀、更佳為圓形。 The layer of the agent 4 has a specific planar shape, which will be The annular frame R is bonded to the peripheral edge portion of the label portion 5a of the adhesive tape 5, and can be made smaller than the shape of the label portion 5a so as to be lifted up by the lifting member of the pickup device (see FIG. 6(C)). The subsequent layer 4 is preferably substantially the same shape as the label portion 5a and is similar to the size of the label portion 5a. The subsequent agent layer 4 does not necessarily have to be circular, but is preferably close to a circular shape, more preferably circular.

金屬層3係為與接著劑層4相同之形狀，接著劑層4層合於金屬層3。此處所稱之層合，只要主要部分有層合即可，金屬層3與接著劑層4並不一定必須為相同大小，但由製造之便利性而言，較佳為大致相同形狀。 The metal layer 3 has the same shape as the adhesive layer 4, and the adhesive layer 4 is laminated on the metal layer 3. The lamination referred to herein is not necessarily required to be the same size as long as the main portion is laminated, but it is preferably substantially the same shape in terms of convenience in production.

又，此處所稱之層合，包含於金屬層3上直接設置接著劑層4的情況、與隔著用以使兩者之密著性成為良好之底塗層等而間接地設置的情況。 In addition, the lamination referred to here includes a case where the adhesive layer 4 is directly provided on the metal layer 3, and a case where it is indirectly provided through an undercoat layer or the like which is excellent in adhesion therebetween.

本發明之電子裝置封裝用膠帶1，可為將形成有複數個層合有金屬層3、接著劑層4、黏著膠帶5之標籤部5a的層合體之長形之基材膠帶2捲繞為輥狀之形態，亦可為設置於基材膠帶2之層合體逐個被切斷的形態。以下說明各構成要素。 The tape 1 for electronic device packaging of the present invention may be obtained by winding a long substrate tape 2 having a laminate in which a plurality of laminated layers 5a of a metal layer 3, an adhesive layer 4, and an adhesive tape 5 are formed. The form of the roll may be a form in which the laminate provided on the base tape 2 is cut one by one. Each component will be described below.

<基材膠帶2> <Substrate tape 2>

基材膠帶2只要係具有黏著面，且基材膠帶2與金屬層3之黏著力P1為0.01~0.5N/25mm，基材膠帶2與黏著膠帶5之黏著力P2為0.01~0.5N/25mm，基材膠帶2與金屬層3之黏著力P1及基材膠帶2與黏著膠帶5之黏著力 P2的比P1/P2為0.1~10，則無特殊限定。如此之基材膠帶2，例如可適合使用具有樹脂薄膜與設置於樹脂薄膜之單面的基材膠帶用黏著劑層之膠帶。 The substrate tape 2 has an adhesive surface, and the adhesion force P1 of the substrate tape 2 and the metal layer 3 is 0.01 to 0.5 N/25 mm, and the adhesion force P2 of the substrate tape 2 and the adhesive tape 5 is 0.01 to 0.5 N/25 mm. Adhesion force P1 of the substrate tape 2 and the metal layer 3 and adhesion of the substrate tape 2 and the adhesive tape 5 The ratio P2 of P2 is 0.1 to 10, and there is no particular limitation. As the base tape 2, for example, a tape having a resin film and an adhesive layer for a base tape provided on one side of the resin film can be suitably used.

構成基材膠帶2之樹脂薄膜的素材，可使用公知材料，若為例示者，則可列舉聚酯(PET、PBT、PEN、PBN、PTT)系、聚烯烴(PP、PE)系、共聚物(EVA、EEA、EBA)系、及將此等材料一部分取代，進一步提高接著性或機械強度之薄膜。又，亦可為此等薄膜之層合體。就耐熱性、平滑性、及獲得容易性之觀點，較佳為由聚對苯二甲酸乙二酯、聚丙烯、及高密度聚乙烯中選擇。 A known material can be used as the material of the resin film constituting the base tape 2, and examples thereof include polyester (PET, PBT, PEN, PBN, PTT), polyolefin (PP, PE), and copolymer. (EVA, EEA, EBA), and a film in which some of these materials are substituted to further improve adhesion or mechanical strength. Further, a laminate of the film may be used for this purpose. From the viewpoints of heat resistance, smoothness, and ease of availability, it is preferably selected from polyethylene terephthalate, polypropylene, and high density polyethylene.

構成基材膠帶2之樹脂薄膜的厚度，並無特殊限定，可適當設定，較佳為10~150μm。 The thickness of the resin film constituting the base tape 2 is not particularly limited and may be appropriately set, and is preferably 10 to 150 μm.

構成基材膠帶2之基材膠帶用黏著劑層所使用的樹脂，只要係基材膠帶2與金屬層3之黏著力P1為0.01~0.5N/25mm，基材膠帶2與黏著膠帶5之黏著力P2為0.01~0.5N/25mm，且基材膠帶2與金屬層3之黏著力P1及基材膠帶2與黏著膠帶5之黏著力P2的比P1/P2為0.1~10，則無特殊限定，可使用黏著劑所使用之公知的氯化聚丙烯樹脂、丙烯酸樹脂、聚酯樹脂、聚胺基甲酸酯樹脂、環氧樹脂等，較佳為以丙烯酸系聚合物為基底聚合物之丙烯酸系黏著劑。 The resin used for the adhesive layer for the base tape of the base tape 2 is as long as the adhesive force P1 of the base tape 2 and the metal layer 3 is 0.01 to 0.5 N/25 mm, and the adhesive tape 2 and the adhesive tape 5 are adhered. The force P2 is 0.01 to 0.5 N/25 mm, and the adhesive force P1 of the base tape 2 and the metal layer 3 and the ratio P1/P2 of the adhesive force P2 of the base tape 2 and the adhesive tape 5 are 0.1 to 10, and there is no particular limitation. A known chlorinated polypropylene resin, an acrylic resin, a polyester resin, a polyurethane resin, an epoxy resin or the like which is used for the adhesive can be used, and acrylic acid which is preferably an acrylic polymer as a base polymer can be used. Adhesive.

丙烯酸系聚合物，可列舉例如使用(甲基)丙烯酸烷基酯(例如甲基酯、乙基酯、丙基酯、異丙基 酯、丁基酯、異丁基酯、s-丁基酯、t-丁基酯、戊基酯、異戊基酯、己基酯、庚基酯、辛基酯、2-乙基己基酯、異辛基酯、壬基酯、癸基酯、異癸基酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等之烷基的碳數1~30、特別是碳數4~18之直鏈狀或分支鏈狀的烷基酯等)及(甲基)丙烯酸環烷基酯(例如環戊基酯、環己基酯等)之1種或2種以上作為單體成分的丙烯酸系聚合物等。再者，(甲基)丙烯酸酯係指丙烯酸酯及/或甲基丙烯酸酯，本發明之(甲基)均為相同之意義。 Examples of the acrylic polymer include alkyl (meth)acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl group). Esters, butyl esters, isobutyl esters, s-butyl esters, t-butyl esters, amyl esters, isoamyl esters, hexyl esters, heptyl esters, octyl esters, 2-ethylhexyl esters, Isooctyl ester, decyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, cetyl ester, eighteen a alkyl group such as an alkyl ester or an eicosyl ester having 1 to 30 carbon atoms, particularly a linear or branched alkyl ester having 4 to 18 carbon atoms, and a cycloalkyl (meth)acrylate. One or two or more kinds of acrylic polymers such as a cyclopentyl ester or a cyclohexyl ester as a monomer component. Further, (meth) acrylate means acrylate and/or methacrylate, and (meth) of the present invention has the same meaning.

丙烯酸系聚合物，亦能夠以凝集力、耐熱性等之改質為目的，依需要含有可與前述(甲基)丙烯酸烷基酯或環烷基酯共聚合之其他單體成分所對應的單位。如此之單體成分可列舉例如丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、依康酸、馬來酸、富馬酸、巴豆酸等之含羧基之單體；馬來酸酐、依康酸酐等之酸酐單體；(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、(甲基)丙烯酸(4-羥基甲基環己基)甲酯等之含羥基之單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙烷磺酸、(甲基)丙烯醯胺丙烷磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯醯氧基萘磺 酸等之含磺酸基之單體；2-羥基乙基丙烯醯基磷酸酯等之含磷酸基之單體；丙烯醯胺、丙烯腈等。此等可共聚合之單體成分，可使用1種或2種以上。此等可共聚合之單體的使用量，較佳為全部單體成分之40重量%以下。 The acrylic polymer may also have a unit corresponding to other monomer components copolymerizable with the alkyl (meth)acrylate or the cycloalkyl ester as needed for the purpose of reforming such as cohesive force and heat resistance. . Examples of such a monomer component include carboxyl groups such as acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, isaconic acid, maleic acid, fumaric acid, and crotonic acid. Monomer; anhydride monomer such as maleic anhydride or isaconic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (meth)acrylic acid ( a hydroxyl group-containing monomer such as 4-hydroxymethylcyclohexyl)methyl ester; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)propenylamine-2-methylpropanesulfonic acid, (methyl Acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate, (meth) propylene sulfoxy naphthene a sulfonic acid group-containing monomer such as an acid; a phosphate group-containing monomer such as 2-hydroxyethyl acryloylphosphoric acid phosphate; acrylamide or acrylonitrile. These monomer components which can be copolymerized may be used alone or in combination of two or more. The amount of these copolymerizable monomers to be used is preferably 40% by weight or less based on the entire monomer components.

進一步地，丙烯酸系聚合物因為會被交聯，因此亦可依需要含有多官能性單體等作為共聚合用單體成分。如此之多官能性單體，可列舉例如己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、(甲基)丙烯酸環氧酯、聚酯(甲基)丙烯酸酯、胺基甲酸酯(甲基)丙烯酸酯等。此等多官能性單體亦可使用1種或2種以上。多官能性單體之使用量，由黏著特性等之觀點，較佳為全部單體成分之30重量%以下。 Further, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like may be contained as a monomer component for copolymerization as needed. Examples of such a polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, and neopentyl Diol (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate , (meth)acrylic acid epoxy ester, polyester (meth) acrylate, urethane (meth) acrylate, and the like. These polyfunctional monomers may be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less based on the total of the monomer components from the viewpoint of adhesion characteristics and the like.

丙烯酸系聚合物之配製，例如可對1種或2種以上之成分單體的混合物應用溶液聚合方式或乳化聚合方式、塊狀聚合方式或懸浮聚合方式等之適當方式來進行。基材膠帶用黏著劑層，較佳為抑制低分子量物質之含有的組成，由該觀點，係以重量平均分子量30萬以上、特別是40萬~300萬之丙烯酸系聚合物為主成分者較佳，由此，黏著劑亦能夠以內部交聯方式或外部交聯方式等而成為適當的交聯形態。 The preparation of the acrylic polymer can be carried out, for example, by a suitable method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method or a suspension polymerization method, for a mixture of one or two or more kinds of component monomers. The adhesive layer for a base tape is preferably a composition for suppressing the content of a low molecular weight substance. From this viewpoint, an acrylic polymer having a weight average molecular weight of 300,000 or more, particularly 400,000 to 3,000,000, is mainly composed. Preferably, the adhesive can also be in an appropriate crosslinked form by internal crosslinking or external crosslinking.

又，為了控制基材膠帶用黏著劑層之交聯密度而提高與黏著膠帶5之剝離性，例如可採用使用多官能異氰酸酯系化合物、多官能環氧系化合物、三聚氰胺系化合物、金屬鹽系化合物、金屬鉗合系化合物、胺基樹脂系化合物、或過氧化物等之適當的外部交聯劑來進行交聯處理之方式；或混合具有2個以上碳-碳雙鍵之低分子化合物並藉由能量線照射等來進行交聯處理之方式等之適當方式。使用外部交聯劑時，其使用量係依與欲交聯之基底聚合物的平衡、進而依作為黏著劑之使用用途來適當決定。一般而言，相對於前述基底聚合物100重量份而言，較佳摻合10重量份左右以下、更佳摻合0.1重量份~10重量份。 Further, in order to control the crosslink density of the adhesive layer for a base tape, the peeling property with the adhesive tape 5 is improved, and for example, a polyfunctional isocyanate compound, a polyfunctional epoxy compound, a melamine compound, or a metal salt compound can be used. a method of crosslinking treatment by a suitable external crosslinking agent such as a metal nip compound, an amine resin compound, or a peroxide; or mixing a low molecular compound having two or more carbon-carbon double bonds and borrowing An appropriate method such as a method of performing crosslinking treatment by irradiation with an energy ray or the like. When an external crosslinking agent is used, the amount used is appropriately determined depending on the balance of the base polymer to be crosslinked and the use as an adhesive. In general, it is preferably blended in an amount of about 10 parts by weight or less, more preferably from 0.1 part by weight to 10 parts by weight, based on 100 parts by weight of the base polymer.

上述之丙烯酸系聚合物中，尤特別以含有以CH2=CHCOOR(式中，R為碳數4~18之烷基)表示之丙烯酸酯、含羥基之單體、與異氰酸酯化合物而構成之丙烯酸系聚合物P為佳。 The acrylic polymer described above particularly contains an acrylate represented by CH 2 =CHCOOR (wherein R is an alkyl group having 4 to 18 carbon atoms), a hydroxyl group-containing monomer, and an isocyanate compound. The polymer P is preferred.

丙烯酸烷基酯之烷基的碳數未達4時，極性高，剝離力變得過大，於電子裝置封裝用膠帶1之製造過程中，可能有將金屬層3及接著劑層4或黏著膠帶5切斷為特定形狀後，變得不易將該特定形狀之周邊的不要部分由基材膠帶2剝離的情況。另一方面，丙烯酸烷基酯之烷基的碳數超過18時，基材膠帶用黏著劑層之玻璃轉移溫度變得過高，於常溫之接著特性降低，其結果，於電子裝置封裝用膠帶1之製造過程中，可能有金屬層3未充分被 保持於基材膠帶2、或環狀框架貼合時於金屬層3及接著劑層4產生皺褶的情況。 When the carbon number of the alkyl group of the alkyl acrylate is less than 4, the polarity is high and the peeling force is excessively large. In the manufacturing process of the tape 1 for electronic device packaging, the metal layer 3 and the adhesive layer 4 or the adhesive tape may be present. 5 After cutting into a specific shape, it becomes difficult to peel the unnecessary part of the periphery of the specific shape from the base tape 2 . On the other hand, when the carbon number of the alkyl group of the alkyl acrylate is more than 18, the glass transition temperature of the adhesive layer for a base tape becomes too high, and the subsequent characteristic at normal temperature is lowered, and as a result, the tape for electronic device packaging is used. During the manufacturing process, there may be metal layer 3 not fully When the base tape 2 or the annular frame is bonded, the metal layer 3 and the adhesive layer 4 are wrinkled.

上述丙烯酸系聚合物P，亦可依需要含有其他單體成分所對應之單位。 The acrylic polymer P may contain units corresponding to other monomer components as needed.

丙烯酸系聚合物P中，較佳使用不具有自由基反應性碳-碳雙鍵之異氰酸酯化合物，但亦可使用具有自由基反應性碳-碳雙鍵之異氰酸酯化合物。使用具有自由基反應性碳-碳雙鍵之異氰酸酯化合物時，丙烯酸聚合物係成為具有對於前述丙烯酸酯或含羥基之單體等之單體組成物所成的聚合物，加成反應含有雙鍵之異氰酸酯化合物而得的構成。藉此，可成為藉由活性能量線(紫外線等)之照射而硬化的活性能量線硬化型黏著劑層(紫外線硬化型黏著劑層等)。惟，金屬層3之表面具有凹凸時，因能量線照射所致之基材膠帶用黏著劑層的硬化收縮，可能使基材膠帶用黏著劑層會咬入金屬層3表面之凹凸，使基材膠帶2與金屬層3之剝離力上昇。又，與黏著膠帶5貼合後照射能量線時，連黏著膠帶5之黏著力也會降低，因此必須於黏著膠帶5之貼合前照射，製程變得複雜。因此，丙烯酸系聚合物P中，較佳為使用不具有自由基反應性碳-碳雙鍵之異氰酸酯化合物。 In the acrylic polymer P, an isocyanate compound having no radically reactive carbon-carbon double bond is preferably used, but an isocyanate compound having a radically reactive carbon-carbon double bond can also be used. When an isocyanate compound having a radical-reactive carbon-carbon double bond is used, the acrylic polymer is a polymer having a monomer composition such as the above acrylate or a hydroxyl group-containing monomer, and the addition reaction contains a double bond. The composition of the isocyanate compound. Thereby, the active energy ray-curable adhesive layer (such as an ultraviolet curable adhesive layer) which is cured by irradiation with an active energy ray (such as ultraviolet rays) can be used. However, when the surface of the metal layer 3 has irregularities, the adhesive tape layer of the base tape due to the irradiation of the energy ray hardens and shrinks, and the adhesive layer of the base tape may bite into the unevenness of the surface of the metal layer 3 to make the base. The peeling force of the material tape 2 and the metal layer 3 rises. Further, when the energy ray is applied to the adhesive tape 5, the adhesive force of the adhesive tape 5 is lowered. Therefore, it is necessary to irradiate the adhesive tape 5 before the bonding, and the process becomes complicated. Therefore, in the acrylic polymer P, an isocyanate compound having no radically reactive carbon-carbon double bond is preferably used.

構成基材膠帶2之基材膠帶用黏著劑層的厚度並無特殊限制，可適當決定，一般而言為3~200μm左右。又，基材膠帶用黏著劑層可由單層構成亦可由複數層構成。 The thickness of the adhesive layer for the base tape constituting the base tape 2 is not particularly limited, and can be appropriately determined, and is generally about 3 to 200 μm. Further, the adhesive layer for the base tape may be composed of a single layer or a plurality of layers.

<黏著膠帶5> <Adhesive tape 5>

作為黏著膠帶5，只要基材膠帶2與黏著膠帶5之黏著力P2為0.01~0.5N/25mm、基材膠帶2與金屬層3之黏著力P1及基材膠帶2與黏著膠帶5之黏著力P2的比P1/P2為0.1~10，則無特殊限制，可使用習知之黏著膠帶5。作為黏著膠帶5，例如可適合使用於基材薄膜上設置有黏著劑層者。 As the adhesive tape 5, as long as the adhesive force P2 of the base tape 2 and the adhesive tape 5 is 0.01 to 0.5 N/25 mm, the adhesive force P1 of the base tape 2 and the metal layer 3, and the adhesive force of the base tape 2 and the adhesive tape 5 The ratio P2 of P2 is 0.1 to 10, and there is no particular limitation, and a conventional adhesive tape 5 can be used. As the adhesive tape 5, for example, an adhesive layer may be suitably used for the base film.

基材薄膜，只要係以往公知者則可無特別限制地使用，但使用放射線硬化性之材料作為後述黏著劑層時，較佳為使用具有放射線透過性者。 The base film is not particularly limited as long as it is conventionally known. However, when a radiation curable material is used as an adhesive layer to be described later, it is preferred to use a radiation-transmitting property.

例如，作為其材料，可列舉聚乙烯、聚丙烯、乙烯-丙烯共聚物、聚丁烯-1、聚-4-甲基戊烯-1、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸乙酯共聚物、乙烯-丙烯酸甲酯共聚物、乙烯-丙烯酸共聚物、離子聚合物等之α-烯烴之均聚物或共聚物或此等之混合物、聚胺基甲酸酯、苯乙烯-乙烯-丁烯或戊烯系共聚物、聚醯胺-多元醇共聚物等之熱可塑性彈性體、及此等之混合物。又，基材薄膜亦可為混合由此等之群中選出的2種以上之材料者，此等亦可為單層或經複層化者。 For example, examples of the material thereof include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, and ethylene-ethyl acrylate. a homopolymer or copolymer of an α-olefin of a copolymer, an ethylene-methyl acrylate copolymer, an ethylene-acrylic acid copolymer, an ionic polymer, or the like, a mixture thereof, a polyurethane, a styrene-ethylene- A thermoplastic elastomer such as a butene or pentene copolymer, a polyamine-polyol copolymer, or the like, and a mixture thereof. Further, the base film may be a mixture of two or more selected from the group, and the like may be a single layer or a stratified layer.

基材薄膜之厚度並無特殊限定，可適當設定，較佳為50~200μm。 The thickness of the base film is not particularly limited and may be appropriately set, and is preferably 50 to 200 μm.

為了提高基材薄膜與黏著劑層之密著性，對基材薄膜之表面亦可實施鉻酸處理、臭氧暴露、火焰暴 露、高壓電撃暴露、離子化放射線處理等之化學或物理表面處理。 In order to improve the adhesion between the substrate film and the adhesive layer, the surface of the substrate film may also be subjected to chromic acid treatment, ozone exposure, flame storm. Chemical or physical surface treatments such as exposure to dew, high voltage electrocautery exposure, ionizing radiation treatment, etc.

又，本實施形態中，雖於基材薄膜之上直接設置黏著劑層，但亦可隔著用以提高密著性之底塗層、或用以提高切割時之切削性之錨定層、應力緩和層、抗靜電層等而間接地設置。 Further, in the present embodiment, the adhesive layer is directly provided on the base film, but the anchor layer for improving the adhesion or the anchor layer for improving the machinability at the time of cutting may be interposed. The stress relaxation layer, the antistatic layer, and the like are indirectly provided.

黏著膠帶5之黏著劑層所使用的樹脂，並無特殊限定，可使用黏著劑所使用之公知的氯化聚丙烯樹脂、丙烯酸樹脂、聚酯樹脂、聚胺基甲酸酯樹脂、環氧樹脂等，較佳為以丙烯酸系聚合物為基底聚合物之丙烯酸系黏著劑。 The resin used for the adhesive layer of the adhesive tape 5 is not particularly limited, and a known chlorinated polypropylene resin, an acrylic resin, a polyester resin, a polyurethane resin, or an epoxy resin used for the adhesive can be used. Preferably, it is an acrylic adhesive which uses an acrylic polymer as a base polymer.

丙烯酸系聚合物，可列舉例如使用(甲基)丙烯酸烷基酯(例如甲基酯、乙基酯、丙基酯、異丙基酯、丁基酯、異丁基酯、s-丁基酯、t-丁基酯、戊基酯、異戊基酯、己基酯、庚基酯、辛基酯、2-乙基己基酯、異辛基酯、壬基酯、癸基酯、異癸基酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等之烷基的碳數1~30、特別是碳數4~18之直鏈狀或分支鏈狀的烷基酯等)及(甲基)丙烯酸環烷基酯(例如環戊基酯、環己基酯等)之1種或2種以上作為單體成分的丙烯酸系聚合物等。再者，(甲基)丙烯酸酯係指丙烯酸酯及/或甲基丙烯酸酯，本發明之(甲基)均為相同之意義。 Examples of the acrylic polymer include alkyl (meth)acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester). , t-butyl ester, amyl ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, decyl ester, decyl ester, isodecyl Carbon number of alkyl groups such as ester, undecyl ester, dodecyl ester, tridecyl ester, myristyl ester, cetyl ester, octadecyl ester, eicosyl ester, etc. 1 to 30, particularly a linear or branched alkyl ester having 4 to 18 carbon atoms, and a cycloalkyl (meth)acrylate (for example, cyclopentyl ester or cyclohexyl ester) Or two or more types of acrylic polymers and the like as a monomer component. Further, (meth) acrylate means acrylate and/or methacrylate, and (meth) of the present invention has the same meaning.

丙烯酸系聚合物，亦能夠以凝集力、耐熱性 等之改質為目的，依需要含有可與前述(甲基)丙烯酸烷基酯或環烷基酯共聚合之其他單體成分所對應的單位。如此之單體成分可列舉例如丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、依康酸、馬來酸、富馬酸、巴豆酸等之含羧基之單體；馬來酸酐、依康酸酐等之酸酐單體；(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、(甲基)丙烯酸(4-羥基甲基環己基)甲酯等之含羥基之單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙烷磺酸、(甲基)丙烯醯胺丙烷磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯醯氧基萘磺酸等之含磺酸基之單體；2-羥基乙基丙烯醯基磷酸酯等之含磷酸基之單體；丙烯醯胺、丙烯腈等。此等可共聚合之單體成分，可使用1種或2種以上。此等可共聚合之單體的使用量，較佳為全部單體成分之40重量%以下。 Acrylic polymer, also capable of cohesiveness, heat resistance For the purpose of upgrading, etc., a unit corresponding to other monomer components copolymerizable with the above alkyl (meth) acrylate or cycloalkyl ester is contained as needed. Examples of such a monomer component include carboxyl groups such as acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, isaconic acid, maleic acid, fumaric acid, and crotonic acid. Monomer; anhydride monomer such as maleic anhydride or isaconic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (meth)acrylic acid ( a hydroxyl group-containing monomer such as 4-hydroxymethylcyclohexyl)methyl ester; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)propenylamine-2-methylpropanesulfonic acid, (methyl a sulfonic acid group-containing monomer such as acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) propylene phthaloxy naphthalene sulfonic acid; 2-hydroxyethyl acrylonitrile phosphate; a monomer containing a phosphate group; acrylamide, acrylonitrile, or the like. These monomer components which can be copolymerized may be used alone or in combination of two or more. The amount of these copolymerizable monomers to be used is preferably 40% by weight or less based on the entire monomer components.

進一步地，丙烯酸系聚合物因為會被交聯，因此亦可依需要含有多官能性單體等作為共聚合用單體成分。如此之多官能性單體，可列舉例如己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四 醇六(甲基)丙烯酸酯、(甲基)丙烯酸環氧酯、聚酯(甲基)丙烯酸酯、胺基甲酸酯(甲基)丙烯酸酯等。此等多官能性單體亦可使用1種或2種以上。多官能性單體之使用量，由黏著特性等之觀點，較佳為全部單體成分之30重量%以下。 Further, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like may be contained as a monomer component for copolymerization as needed. Examples of such a polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, and neopentyl Diol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol Alcohol hexa (meth) acrylate, (meth) acrylate epoxy ester, polyester (meth) acrylate, urethane (meth) acrylate, and the like. These polyfunctional monomers may be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less based on the total of the monomer components from the viewpoint of adhesion characteristics and the like.

丙烯酸系聚合物之配製，例如可對1種或2種以上之成分單體的混合物應用溶液聚合方式或乳化聚合方式、塊狀聚合方式或懸浮聚合方式等之適當方式來進行。黏著劑層，由防止晶圓污染等之觀點，較佳為抑制低分子量物質之含有的組成，由該觀點，係以重量平均分子量30萬以上、特別是40萬~300萬之丙烯酸系聚合物為主成分者較佳，由此，黏著劑亦能夠以內部交聯方式或外部交聯方式等而成為適當的交聯形態。 The preparation of the acrylic polymer can be carried out, for example, by a suitable method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method or a suspension polymerization method, for a mixture of one or two or more kinds of component monomers. The adhesive layer is preferably a composition that suppresses the inclusion of a low molecular weight substance from the viewpoint of preventing wafer contamination, and the like, and is an acrylic polymer having a weight average molecular weight of 300,000 or more, particularly 400,000 to 3,000,000. The main component is preferred, and thus the adhesive can be appropriately crosslinked by an internal crosslinking method or an external crosslinking method.

又，為了控制黏著劑層之交聯密度，提高拾取性，例如可採用使用多官能異氰酸酯系化合物、多官能環氧系化合物、三聚氰胺系化合物、金屬鹽系化合物、金屬鉗合系化合物、胺基樹脂系化合物、或過氧化物等之適當的外部交聯劑進行交聯處理之方式；或混合具有2個以上碳-碳雙鍵之低分子化合物，藉由能量線照射等進行交聯處理之方式等之適當方式。使用外部交聯劑時，其使用量係依與欲交聯之基底聚合物的平衡、進而依作為黏著劑之使用用途來適當決定。一般而言，相對於前述基底聚合物100重量份而言，較佳摻合10重量份左右以下、更佳摻合0.1重量份~10重量份。再者，由防止劣化等之觀點 而言，於黏著劑中，亦可依需要，於前述成分以外，使用各種增黏劑、老化防止劑等之添加劑。 Moreover, in order to control the crosslinking density of the adhesive layer and to improve the pick-up property, for example, a polyfunctional isocyanate compound, a polyfunctional epoxy compound, a melamine compound, a metal salt compound, a metal chelating compound, or an amine group can be used. a method of crosslinking a resin-based compound or a suitable external crosslinking agent such as a peroxide; or mixing a low-molecular compound having two or more carbon-carbon double bonds, and crosslinking treatment by energy ray irradiation or the like The appropriate way of the way. When an external crosslinking agent is used, the amount used is appropriately determined depending on the balance of the base polymer to be crosslinked and the use as an adhesive. In general, it is preferably blended in an amount of about 10 parts by weight or less, more preferably from 0.1 part by weight to 10 parts by weight, based on 100 parts by weight of the base polymer. Furthermore, from the viewpoint of preventing deterioration, etc. In addition, as the adhesive, additives such as various tackifiers and aging inhibitors may be used in addition to the above components.

構成黏著劑層之黏著劑，放射線硬化型黏著劑為適宜。放射線硬化型黏著劑，可例示於前述黏著劑中，摻合了放射線硬化性之單體成分或放射線硬化性之寡聚物成分的添加型之放射線硬化型黏著劑。 As the adhesive constituting the adhesive layer, a radiation hardening type adhesive is suitable. In the above-mentioned adhesive, the radiation-curable adhesive may be an additive type radiation-curable adhesive in which a radiation curable monomer component or a radiation curable oligomer component is blended.

所摻合之放射線硬化性的單體成分，可列舉例如胺基甲酸酯(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。此等單體成分可使用1種或合併使用2種以上。 Examples of the radiation curable monomer component to be blended include, for example, urethane (meth) acrylate, trimethylolpropane tri(meth) acrylate, and tetramethylol methane tetra(methyl). Acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol Di(meth)acrylate and the like. These monomer components can be used alone or in combination of two or more.

又，放射線硬化性之寡聚物成分可列舉胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種寡聚物，其分子量以100~30000左右之範圍者為適當。放射線硬化性之單體成分或寡聚物成分的摻合量，可依前述黏著劑層之種類，適當決定可使黏著劑層之黏著力降低的量。一般而言，相對於構成黏著劑之丙烯酸系聚合物等之基底聚合物100重量份而言，例如為5重量份~500重量份、較佳為70重量份~150重量份左右。 Further, examples of the radiation curable oligomer component include various oligomers such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type, and the molecular weight thereof is about 100 to 30,000. The scope is appropriate. The blending amount of the radiation hardening monomer component or the oligomer component can appropriately determine the amount by which the adhesive strength of the adhesive layer can be lowered depending on the type of the adhesive layer. In general, it is, for example, 5 parts by weight to 500 parts by weight, preferably 70 parts by weight to 150 parts by weight, per 100 parts by weight of the base polymer of the acrylic polymer or the like constituting the pressure-sensitive adhesive.

又，放射線硬化型黏著劑，除了前述添加型之放射線硬化型黏著劑以外，亦可列舉使用於聚合物側鏈或主鏈中或主鏈末端具有具有碳-碳雙鍵者作為基底聚合 物的內在型之放射線硬化型黏著劑。內在型之放射線硬化型黏著劑，不需含有低分子成分的寡聚物成分等，或者含量不多，因此寡聚物成分等不會隨著時間經過而於黏著劑中移動，可形成安定之層構造的黏著劑層，故較佳。 Further, the radiation-curable adhesive may be used as a base polymerization in a side chain or a main chain of a polymer or a carbon-carbon double bond at a terminal end of the main chain, in addition to the radiation-type adhesive of the above-mentioned addition type. An intrinsic type of radiation-curing adhesive for objects. The intrinsic type radiation curable adhesive does not need to contain a low molecular component oligomer component or the like, or has a small content. Therefore, the oligomer component does not move in the adhesive over time, and can form a stable phase. An adhesive layer of a layer structure is preferred.

具有碳-碳雙鍵之基底聚合物，可無特別限制地使用具有碳-碳雙鍵、且具有黏著性者。如此之基底聚合物，較佳為以丙烯酸系聚合物為基本骨架者。丙烯酸系聚合物之基本骨架，可列舉前述例示之丙烯酸系聚合物。 The base polymer having a carbon-carbon double bond can be used without any particular limitation, and has a carbon-carbon double bond and has adhesiveness. Such a base polymer is preferably an acrylic polymer as a basic skeleton. The basic skeleton of the acrylic polymer may, for example, be an acrylic polymer exemplified above.

碳-碳雙鍵對丙烯酸系聚合物之導入法並無特殊限制，可採用各種方法，但於分子設計上將碳-碳雙鍵導入聚合物側鏈較為容易。例如，可列舉預先使具有官能基的單體與丙烯酸系聚合物共聚合後，使具有可與該官能基反應之官能基及碳-碳雙鍵的化合物，在維持碳-碳雙鍵之放射線硬化性之下進行縮合或加成反應之方法。 The introduction method of the carbon-carbon double bond to the acrylic polymer is not particularly limited, and various methods can be employed. However, it is easy to introduce a carbon-carbon double bond into the polymer side chain in molecular design. For example, a compound having a functional group and an acrylic polymer are copolymerized in advance, and a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is maintained, and radiation of a carbon-carbon double bond is maintained. A method of performing a condensation or addition reaction under hardening.

此等官能基之組合的例子，可列舉羧酸基與環氧基、羧酸基與氮丙啶基、羥基與異氰酸酯基等。就反應追蹤的容易性而言，此等官能基之組合當中尤以羥基與異氰酸酯基之組合為適宜。又，藉由此等官能基之組合，只要是會生成前述具有碳-碳雙鍵之丙烯酸系聚合物的組合，則官能基不管位於丙烯酸系聚合物與前述化合物之何側均可，於前述較佳之組合中，以丙烯酸系聚合物具有羥基、前述化合物具有異氰酸酯基的情況為適宜。此時，具有碳-碳雙鍵之異氰酸酯化合物，可列舉例如甲基丙烯醯基異氰酸酯、2-甲基丙烯醯氧基乙基異氰酸酯、m-異丙烯 基-α,α-二甲基苄基異氰酸酯等。又，丙烯酸系聚合物，可使用使前述例示的含羥基之單體或2-羥基乙基乙烯基醚、4-羥基丁基乙烯基醚、二乙二醇單乙烯基醚等之醚系化合物等共聚合者。 Examples of combinations of such functional groups include a carboxylic acid group and an epoxy group, a carboxylic acid group and an aziridine group, a hydroxyl group and an isocyanate group. In view of the ease of reaction tracking, a combination of a hydroxyl group and an isocyanate group is particularly preferable among the combinations of such functional groups. Further, by a combination of such functional groups, as long as the combination of the acrylic polymer having the carbon-carbon double bond is formed, the functional group may be located on either side of the acrylic polymer and the compound. In a preferred combination, it is preferred that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryl oxime isocyanate, 2-methyl propylene methoxyethyl isocyanate, and m-isopropyl propylene. Base-α,α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, an ether compound such as the above-exemplified hydroxyl group-containing monomer or 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether can be used. Co-aggregators.

內在型之放射線硬化型黏著劑，可單獨使用前述具有碳-碳雙鍵之基底聚合物(特別是丙烯酸系聚合物)，然亦可摻合前述放射線硬化性之單體成分或寡聚物成分等之光聚合性化合物至不使特性惡化之程度。該光聚合性化合物之摻合量，通常相對於基底聚合物100重量份而言係30重量份以下之範圍內、較佳為0~10重量份之範圍內。 The intrinsic type radiation-curable adhesive may be a base polymer (especially an acrylic polymer) having a carbon-carbon double bond, or may be blended with the radiation curable monomer component or oligomer component. The photopolymerizable compound is such that it does not deteriorate the properties. The blending amount of the photopolymerizable compound is usually in the range of 30 parts by weight or less, preferably 0 to 10 parts by weight based on 100 parts by weight of the base polymer.

藉由紫外線等來硬化時，放射線硬化型黏著劑中較佳為含有光聚合起始劑。 When hardened by ultraviolet rays or the like, it is preferred that the radiation-curable adhesive contains a photopolymerization initiator.

上述之丙烯酸系聚合物中，尤特別以含有以CH2=CHCOOR(式中，R為碳數4~18之烷基)表示之丙烯酸酯、含羥基之單體、與分子內具有自由基反應性碳-碳雙鍵之異氰酸酯化合物而構成之丙烯酸系聚合物A為佳。 In the above acrylic polymer, particularly, an acrylate having a CH 2 =CHCOOR (wherein R is an alkyl group having 4 to 18 carbon atoms), a hydroxyl group-containing monomer, and a radical reaction in the molecule are contained. The acrylic polymer A composed of an isocyanate compound of a carbon-carbon double bond is preferred.

丙烯酸烷基酯之烷基的碳數未達4時，可能有極性高，剝離力變得過大，使拾取性降低的情況。另一方面，丙烯酸烷基酯之烷基碳數超過18時，黏著劑層之玻璃轉移溫度變得過高，於常溫之接著特性降低，其結果，於切割或擴展時，可能有產生接著劑層4及金屬層3之剝離的情況。 When the carbon number of the alkyl group of the alkyl acrylate is less than 4, the polarity may be high, the peeling force may become too large, and the pick-up property may fall. On the other hand, when the alkyl carbon number of the alkyl acrylate exceeds 18, the glass transition temperature of the adhesive layer becomes too high, and the subsequent characteristics at normal temperature are lowered, and as a result, an adhesive may be generated at the time of cutting or expanding. The peeling of the layer 4 and the metal layer 3.

上述丙烯酸系聚合物A，亦可依需要含有其他單體成分所對應之單位。 The acrylic polymer A may contain units corresponding to other monomer components as needed.

丙烯酸系聚合物A中，可使用具有自由基反應性碳-碳雙鍵之異氰酸酯化合物。亦即，丙烯酸聚合物，較佳為具有對於前述丙烯酸酯或含羥基之單體等之單體組成物所成的聚合物，使含有雙鍵之異氰酸酯化合物進行加成反應而得的構成。因此，丙烯酸系聚合物，較佳為於其分子構造內，具有自由基反應性碳-碳雙鍵。藉此，可成為藉由活性能量線(紫外線等)之照射而硬化的活性能量線硬化型黏著劑層(紫外線硬化型黏著劑層等)，且可降低金屬層3與黏著劑層之剝離力。 In the acrylic polymer A, an isocyanate compound having a radically reactive carbon-carbon double bond can be used. In other words, the acrylic polymer preferably has a structure in which an isocyanate compound containing a double bond is subjected to an addition reaction with a polymer composed of a monomer composition such as the above acrylate or a hydroxyl group-containing monomer. Therefore, the acrylic polymer preferably has a radical-reactive carbon-carbon double bond in its molecular structure. Thereby, the active energy ray-curable adhesive layer (such as an ultraviolet curable adhesive layer) which is cured by irradiation with an active energy ray (such as ultraviolet rays) can be used, and the peeling force of the metal layer 3 and the adhesive layer can be reduced. .

含有雙鍵之異氰酸酯化合物，可列舉例如甲基丙烯醯基異氰酸酯、丙烯醯基異氰酸酯、2-甲基丙烯醯氧基乙基異氰酸酯、2-丙烯醯氧基乙基異氰酸酯、m-異丙烯基-α,α-二甲基苄基異氰酸酯等。含有雙鍵之異氰酸酯化合物可單獨或組合2種以上使用。 Examples of the isocyanate compound containing a double bond include methacryl oxime isocyanate, propylene decyl isocyanate, 2-methacryloxyethyl isocyanate, 2-propenyl methoxyethyl isocyanate, and m-isopropenyl group. α,α-dimethylbenzyl isocyanate or the like. The isocyanate compound containing a double bond can be used individually or in combination of 2 or more types.

又，於活性能量線硬化型黏著劑，為了調整活性能量線照射前之黏著力、或活性能量線照射後之黏著力，亦可適當使用外部交聯劑。作為外部交聯方法之具體的手段，可列舉添加聚異氰酸酯化合物、環氧化合物、氮丙啶化合物、三聚氰胺系交聯劑等之所謂的交聯劑來進行反應的方法。使用外部交聯劑時，其使用量，係依與欲交聯之基底聚合物的平衡、進而依作為黏著劑之使用用途而適當決定。外部交聯劑之使用量，一般而言，相對於前述 基底聚合物100重量份而言，係20重量份以下(較佳為0.1重量份~10重量份)。進一步地，亦可依需要，於前述成分以外，對活性能量線硬化型黏著劑摻合以往公知之各種增黏劑、老化防止劑、發泡劑等之添加劑。 Further, in the active energy ray-curable adhesive, an external crosslinking agent may be appropriately used in order to adjust the adhesion before the active energy ray irradiation or the adhesion after the active energy ray irradiation. A specific method of the external crosslinking method is a method in which a reaction is carried out by adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine crosslinking agent. When an external crosslinking agent is used, the amount of the crosslinking agent is appropriately determined depending on the balance of the base polymer to be crosslinked and the use of the adhesive. The amount of external crosslinking agent used, generally speaking, relative to the foregoing The basis weight of the base polymer is 20 parts by weight or less (preferably 0.1 parts by weight to 10 parts by weight). Further, an active energy ray-curable adhesive may be blended with an additive such as various conventionally known tackifiers, aging inhibitors, and foaming agents, in addition to the above-mentioned components, as needed.

黏著劑層之厚度並無特殊限制，可適當決定，一般而言為5~200μm左右。又，黏著劑層可由單層構成亦可由複數層構成。 The thickness of the adhesive layer is not particularly limited and can be appropriately determined, and is generally about 5 to 200 μm. Further, the adhesive layer may be composed of a single layer or a plurality of layers.

<金屬層3> <metal layer 3>

構成金屬層3之金屬並無特殊限定，例如，選自由不鏽鋼、鋁、鐵、鈦、錫、鎳及銅所成之群的至少1種，就散熱性、電子裝置封裝8之翹曲防止的觀點而言較佳。此等之中，就熱傳導性高，可得到散熱效果的觀點而言，特佳為含有銅。又，就電子裝置封裝8之翹曲防止的觀點而言，特佳為含有鋁。 The metal constituting the metal layer 3 is not particularly limited. For example, at least one selected from the group consisting of stainless steel, aluminum, iron, titanium, tin, nickel, and copper is used for heat dissipation and warpage prevention of the electronic device package 8. It is preferable from the viewpoint. Among these, in terms of heat conductivity and heat dissipation, it is particularly preferable to contain copper. Further, from the viewpoint of preventing warpage of the electronic device package 8, it is particularly preferable to contain aluminum.

金屬層3之厚度，可考慮散熱性、電子裝置封裝8之翹曲防止性、及加工性等，來適當決定，通常為2~200μm之範圍。金屬層3為200μm以下時，捲繞加工容易，為50μm以下時，就可有助於半導體封裝之薄型化的觀點而言較佳。另一方面，由散熱性之觀點，最低亦以2μm以上為必要。 The thickness of the metal layer 3 can be appropriately determined in consideration of heat dissipation, warpage prevention of the electronic device package 8, and workability, and is usually in the range of 2 to 200 μm. When the metal layer 3 is 200 μm or less, the winding process is easy, and when it is 50 μm or less, it is preferable from the viewpoint of contributing to the reduction in thickness of the semiconductor package. On the other hand, from the viewpoint of heat dissipation, it is necessary to have a minimum of 2 μm or more.

如此之金屬層3，可使用金屬箔，金屬箔可為電解箔亦可為壓延箔。 For such a metal layer 3, a metal foil may be used, and the metal foil may be an electrolytic foil or a calendered foil.

<接著劑層4> <Binder layer 4>

接著劑層4，為將接著劑預先薄膜化者。 Next, the agent layer 4 is a film which is previously thinned by an adhesive.

接著劑層4，至少係由熱硬化性樹脂形成，較佳為至少由熱硬化性樹脂與熱可塑性樹脂形成。 The subsequent agent layer 4 is formed of at least a thermosetting resin, and is preferably formed of at least a thermosetting resin and a thermoplastic resin.

熱可塑性樹脂，可列舉例如天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱可塑性聚醯亞胺樹脂、6-耐綸或6,6-耐綸等之聚醯胺樹脂、苯氧樹脂、丙烯酸樹脂、PET(聚對苯二甲酸乙二酯)或PBT(聚對苯二甲酸丁二酯)等之飽和聚酯樹脂、聚醯胺醯亞胺樹脂、或氟樹脂等。熱可塑性樹脂可單獨或合併使用2種以上。此等熱可塑性樹脂當中，就離子性雜質少，應力緩和性優良的觀點，且就丙烯酸樹脂兼具可撓性與強度而為高韌性的觀點而言，苯氧樹脂由於在各個觀點可容易確保半導體元件之信賴性，故為特佳。 Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and polybutylene. Polyene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nene or 6,6-nylon, phenoxy resin, acrylic resin, PET (polyethylene terephthalate) A saturated polyester resin such as ester) or PBT (polybutylene terephthalate), a polyamidoximine resin, or a fluororesin. The thermoplastic resin may be used alone or in combination of two or more. Among these thermoplastic resins, phenoxy resin is easily ensured from the viewpoints of the viewpoint that the ionic impurities are small and the stress relaxation property is excellent, and the acrylic resin has both flexibility and strength and high toughness. The reliability of semiconductor components is particularly good.

丙烯酸樹脂，並無特殊限定，可列舉以具有碳數30以下(較佳為碳數1~12、更佳為碳數6~10、特佳為碳數8或9)之直鏈或分支之烷基的丙烯酸或甲基丙烯酸之酯的1種或2種以上作為成分之聚合物等。亦即，本發明中，丙烯酸樹脂係為亦包含甲基丙烯酸樹脂之廣義的意義。前述烷基可列舉例如甲基、乙基、丙基、異丙基、n-丁基、t-丁基、異丁基、戊基、異戊基、己基、庚基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸 基、十一烷基、十二烷基(月桂基)、十三烷基、十四烷基、硬脂基、十八烷基等。 The acrylic resin is not particularly limited, and may be a straight chain or a branch having a carbon number of 30 or less (preferably, a carbon number of 1 to 12, more preferably a carbon number of 6 to 10, particularly preferably a carbon number of 8 or 9). One or two or more kinds of polymers of an alkyl acrylate or methacrylic acid ester as a component. That is, in the present invention, the acrylic resin has a broad meaning including methacrylic resin. The aforementioned alkyl group may, for example, be methyl, ethyl, propyl, isopropyl, n-butyl, t-butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl or 2-ethylhexyl. , octyl, isooctyl, decyl, isodecyl, sulfhydryl, isoindole Base, undecyl, dodecyl (lauryl), tridecyl, tetradecyl, stearyl, octadecyl and the like.

又，用以形成丙烯酸樹脂之其他單體(烷基之碳數為30以下之丙烯酸或甲基丙烯酸的烷基酯以外之單體)，並無特殊限定，可列舉例如丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、依康酸、馬來酸、富馬酸或巴豆酸等之含羧基之單體；馬來酸酐或依康酸酐等之酸酐單體；(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯或丙烯酸(4-羥基甲基環己基)-甲酯等之含羥基之單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙烷磺酸、(甲基)丙烯醯胺丙烷磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯醯氧基萘磺酸等之含磺酸基之單體；或2-羥基乙基丙烯醯基磷酸酯等之含磷酸基之單體等。再者，(甲基)丙烯酸係指丙烯酸及/或甲基丙烯酸，本發明之(甲基)均為相同之意義。 Further, the other monomer for forming the acrylic resin (a monomer other than the alkyl ester of acrylic acid or methacrylic acid having an alkyl group having 30 or less carbon atoms) is not particularly limited, and examples thereof include acrylic acid and methacrylic acid. a carboxyl group-containing monomer such as carboxyethyl acrylate, carboxy amyl acrylate, isaconic acid, maleic acid, fumaric acid or crotonic acid; an anhydride monomer such as maleic anhydride or isocanic anhydride; (meth)acrylic acid 2-hydroxyethyl ester, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, a hydroxyl group-containing monomer such as 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate or (4-hydroxymethylcyclohexyl)-methyl acrylate; styrenesulfonic acid, allylic Sulfonic acid, 2-(methyl) propylene decylamine-2-methylpropane sulfonic acid, (meth) acrylamide propylene sulfonic acid, sulfopropyl (meth) acrylate or (meth) propylene oxy group a sulfonic acid group-containing monomer such as naphthalenesulfonic acid; or a phosphate group-containing monomer such as 2-hydroxyethyl propylene decyl phosphate. Further, (meth)acrylic means acrylic acid and/or methacrylic acid, and (meth) of the present invention has the same meaning.

又，熱硬化性樹脂除了可列舉環氧樹脂、酚樹脂以外，可列舉胺基樹脂、不飽和聚酯樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂、熱硬化性聚醯亞胺樹脂等。熱硬化性樹脂可單獨或合併使用2種以上。作為熱硬化性樹脂，特別以會腐蝕半導體元件之離子性雜質等含量少的環氧樹脂為適宜。又，作為環氧樹脂之硬化劑，可適合使用 酚樹脂。 Further, examples of the thermosetting resin include an epoxy resin and a phenol resin, and examples thereof include an amine resin, an unsaturated polyester resin, a polyurethane resin, a polyoxyl resin, and a thermosetting polyimide resin. Wait. The thermosetting resin may be used alone or in combination of two or more. As the thermosetting resin, an epoxy resin having a small content such as ionic impurities which corrode the semiconductor element is particularly preferable. Also, as a hardener for epoxy resin, it is suitable for use. Phenolic resin.

環氧樹脂並無特殊限定，例如可使用雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、溴化雙酚A型環氧樹脂、氫化雙酚A型環氧樹脂、雙酚AF型環氧樹脂、聯苯型環氧樹脂、萘型環氧樹脂、茀型環氧樹脂、酚酚醛清漆型環氧樹脂、鄰甲酚酚醛清漆型環氧樹脂、參羥基苯基甲烷型環氧樹脂、四苯酚基乙烷型環氧樹脂等之二官能環氧樹脂或多官能環氧樹脂；或乙內醯脲型環氧樹脂、參縮水甘油基三聚異氰酸酯型環氧樹脂或縮水甘油胺型環氧樹脂等之環氧樹脂。 The epoxy resin is not particularly limited, and for example, a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol S type epoxy resin, a brominated bisphenol A type epoxy resin, or a hydrogenated bisphenol A type can be used. Epoxy resin, bisphenol AF type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, bismuth type epoxy resin, phenol novolak type epoxy resin, o-cresol novolac type epoxy resin, ginseng a difunctional epoxy resin or a polyfunctional epoxy resin such as a hydroxyphenylmethane type epoxy resin or a tetraphenol ethane type epoxy resin; or an intramethylene urea type epoxy resin or a diglycidyl isocyanurate type Epoxy resin such as epoxy resin or glycidylamine epoxy resin.

作為環氧樹脂，於例示當中，特佳為酚醛清漆型環氧樹脂、聯苯型環氧樹脂、參羥基苯基甲烷型環氧樹脂、四苯酚基乙烷型環氧樹脂。其係因此等環氧樹脂富有與作為硬化劑之酚樹脂的反應性，耐熱性等優良之故。 As the epoxy resin, in particular, a novolac type epoxy resin, a biphenyl type epoxy resin, a parahydroxyphenylmethane type epoxy resin, or a tetraphenol ethane type epoxy resin is preferable. Therefore, the epoxy resin is rich in reactivity with a phenol resin as a curing agent, and is excellent in heat resistance and the like.

進一步地，酚樹脂為作為環氧樹脂之硬化劑而作用者，可列舉例如酚酚醛清漆樹脂、酚芳烷基樹脂、甲酚酚醛清漆樹脂、tert-丁基酚酚醛清漆樹脂、壬基酚酚醛清漆樹脂等之酚醛清漆型酚樹脂；可溶酚醛型酚樹脂、聚對氧苯乙烯等之聚氧苯乙烯等。酚樹脂可單獨或合併使用2種以上。此等酚樹脂當中，特佳為酚酚醛清漆樹脂、酚芳烷基樹脂。其係因可提高半導體裝置之連接信賴性之故。 Further, the phenol resin acts as a curing agent for the epoxy resin, and examples thereof include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butyl phenol novolak resin, and a nonylphenol phenol aldehyde. A novolac type phenol resin such as a varnish resin; a polyoxystyrene such as a novolac type phenol resin or a polyoxypoxy styrene. The phenol resin may be used alone or in combination of two or more. Among these phenol resins, a phenol novolak resin and a phenol aralkyl resin are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

環氧樹脂與酚樹脂之摻合比例，例如，以環氧樹脂成分中之環氧基每1當量而言，酚樹脂中之羥基成 為0.5當量~2.0當量的方式摻合為適宜。更適宜者為0.8當量~1.2當量。亦即，係因為兩者之摻合比例在前述範圍之外時，未進行充分的硬化反應，環氧樹脂硬化物之特性容易劣化之故。 The blending ratio of the epoxy resin and the phenol resin, for example, the hydroxyl group in the phenol resin per equivalent of the epoxy group in the epoxy resin component It is suitable to blend in a form of from 0.5 equivalent to 2.0 equivalents. More preferably, it is 0.8 equivalents to 1.2 equivalents. In other words, when the blending ratio of the two is outside the above range, a sufficient hardening reaction is not performed, and the properties of the cured epoxy resin are likely to deteriorate.

又，亦可使用環氧樹脂與酚樹脂之熱硬化促進觸媒。熱硬化促進觸媒並無特殊限制，可由公知之熱硬化促進觸媒當中適當選擇來使用。熱硬化促進觸媒可單獨或組合2種以上來使用。作為熱硬化促進觸媒，例如可使用胺系硬化促進劑、磷系硬化促進劑、咪唑系硬化促進劑、硼系硬化促進劑、磷-硼系硬化促進劑等。 Further, it is also possible to use a thermosetting epoxy resin and a phenol resin to promote the catalyst. The thermosetting-promoting catalyst is not particularly limited and can be used by appropriately selecting a known thermal hardening-promoting catalyst. The thermosetting-suppressing catalyst can be used singly or in combination of two or more. As the thermosetting-promoting catalyst, for example, an amine-based curing accelerator, a phosphorus-based curing accelerator, an imidazole-based curing accelerator, a boron-based curing accelerator, a phosphorus-boron-based curing accelerator, or the like can be used.

作為環氧樹脂之硬化劑，如上所述，較佳為使用酚樹脂，但亦可使用咪唑類、胺類、酸酐類等之公知之硬化劑。 As the curing agent for the epoxy resin, as described above, a phenol resin is preferably used, but a known curing agent such as an imidazole, an amine or an acid anhydride may be used.

接著劑層4，對電子裝置等之被黏著體9具有接著性(密著性)是重要的。因而，為了將接著劑層4預先交聯至某種程度，亦可預先添加會與聚合物之分子鏈末端之官能基等反應的多官能性化合物作為交聯劑。藉此，可提昇於高溫下之接著特性，實現耐熱性的改善。 The adhesive layer 4 is important for adhesion (adhesion) to the adherend 9 such as an electronic device. Therefore, in order to crosslink the adhesive layer 4 to some extent in advance, a polyfunctional compound that reacts with a functional group at the end of the molecular chain of the polymer or the like may be added in advance as a crosslinking agent. Thereby, the subsequent characteristics at a high temperature can be improved, and the heat resistance can be improved.

交聯劑並無特殊限制，可使用公知之交聯劑。具體而言，除了可列舉例如異氰酸酯系交聯劑、環氧系交聯劑、三聚氰胺系交聯劑、過氧化物系交聯劑以外，尚可列舉尿素系交聯劑、金屬烷氧化物系交聯劑、金屬鉗合系交聯劑、金屬鹽系交聯劑、碳二醯亞胺系交聯劑、噁唑啉系交聯劑、氮丙啶系交聯劑、胺系交聯劑等。作為交 聯劑，異氰酸酯系交聯劑或環氧系交聯劑較適宜。又，前述交聯劑可單獨或組合2種以上使用。 The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, examples thereof include an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, and a peroxide crosslinking agent, and a urea crosslinking agent and a metal alkoxide system are also mentioned. Cross-linking agent, metal-clamping crosslinking agent, metal salt-based crosslinking agent, carbodiimide crosslinking agent, oxazoline crosslinking agent, aziridine crosslinking agent, amine crosslinking agent Wait. As a pay A crosslinking agent, an isocyanate crosslinking agent or an epoxy crosslinking agent is preferred. Further, the above-mentioned crosslinking agents may be used alone or in combination of two or more.

再者，本發明中，亦可藉由電子束或紫外線等之照射，來取代使用交聯劑或與交聯劑同時使用，以實施交聯處理。 Further, in the present invention, the crosslinking treatment may be carried out by using an electron beam or an ultraviolet ray instead of using a crosslinking agent or a crosslinking agent.

接著劑層4中，可依需要適當摻合其他添加劑。其他添加劑可列舉例如填充劑(填料)、難燃劑、矽烷偶合劑、離子捕捉劑，此外可列舉增量劑、老化防止劑、抗氧化劑、界面活性劑等。 In the subsequent agent layer 4, other additives may be appropriately blended as needed. Examples of the other additives include a filler (filler), a flame retardant, a decane coupling agent, and an ion scavenger, and examples thereof include an extender, an aging preventive, an antioxidant, and a surfactant.

作為填充劑，係無機填充劑、有機填充劑均可，無機填充劑較適宜。藉由無機填充劑等之填充劑的摻合，可於接著劑層4實現熱傳導性之提高、彈性率之調節等。無機填充劑可列舉例如二氧化矽、黏土、石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、碳化矽、氮化矽、氮化鋁等之陶瓷類；鋁、銅、銀、金、鎳、鉻、鉛、錫、鋅、鈀、銲錫等之金屬、或合金類、其他碳等所成之各種無機粉末等。填充劑可單獨或合併使用2種以上。作為填充劑，其中尤以二氧化矽或氧化鋁為適宜；作為二氧化矽特別以熔融二氧化矽為適宜。再者，無機填充劑之平均粒徑較佳為0.001μm~80μm之範圍內。無機填充劑之平均粒徑，例如可藉由雷射繞射型粒度分布測定裝置測定。 As the filler, an inorganic filler or an organic filler may be used, and an inorganic filler is preferred. The adhesion of the filler such as an inorganic filler can improve the thermal conductivity, adjust the elastic modulus, and the like in the adhesive layer 4. Examples of the inorganic filler include ceramics such as cerium oxide, clay, gypsum, calcium carbonate, barium sulfate, aluminum oxide, cerium oxide, cerium carbide, cerium nitride, and aluminum nitride; aluminum, copper, silver, gold, and nickel. Various kinds of inorganic powders such as metals such as chromium, lead, tin, zinc, palladium, and solder, or alloys and other carbons. The filler may be used alone or in combination of two or more. As the filler, cerium oxide or aluminum oxide is particularly preferable, and cerium oxide is particularly preferred as molten cerium oxide. Further, the average particle diameter of the inorganic filler is preferably in the range of 0.001 μm to 80 μm. The average particle diameter of the inorganic filler can be measured, for example, by a laser diffraction type particle size distribution measuring apparatus.

填充劑(特別是無機填充劑)之摻合量，相對於有機樹脂成分而言，較佳為98重量%以下(0重量%~98重量%)，特別是二氧化矽的情況時適宜為0重量 %~70重量%、熱傳導或導電等之功能性無機填充劑的情況時適宜為10重量%~98重量%。 The blending amount of the filler (especially the inorganic filler) is preferably 98% by weight or less (0% by weight to 98% by weight) based on the organic resin component, and particularly preferably 0 in the case of cerium oxide. weight The functional inorganic filler such as % to 70% by weight, heat conduction or electric conductivity is preferably 10% by weight to 98% by weight.

又，難燃劑可列舉例如三氧化銻、五氧化銻、溴化環氧樹脂等。難燃劑可單獨或合併使用2種以上。矽烷偶合劑可列舉例如β-(3、4-環氧基環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷等。矽烷偶合劑可單獨或合併使用2種以上。離子捕捉劑可列舉例如水滑石類、氫氧化鉍等。離子捕捉劑可單獨或合併使用2種以上。 Further, examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. The flame retardant may be used alone or in combination of two or more. The decane coupling agent may, for example, be β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, γ-glycidoxypropylmethyldi Ethoxy decane and the like. The decane coupling agent may be used alone or in combination of two or more. Examples of the ion scavenger include hydrotalcites, barium hydroxide, and the like. The ion scavenger may be used alone or in combination of two or more.

接著劑層4，由接著性與信賴性之觀點而言，特佳為含有(A)環氧樹脂、(B)硬化劑、(C)丙烯酸樹脂或苯氧樹脂、及(D)經表面處理之無機填充材。 The adhesive layer 4 is particularly preferably composed of (A) epoxy resin, (B) hardener, (C) acrylic resin or phenoxy resin, and (D) surface-treated from the viewpoint of adhesion and reliability. Inorganic filler.

藉由使用(A)環氧樹脂，可得到高的接著性、耐水性、耐熱性。環氧樹脂可使用上述公知之環氧樹脂。(B)硬化劑可使用上述公知之硬化劑。 By using (A) an epoxy resin, high adhesiveness, water resistance, and heat resistance can be obtained. As the epoxy resin, the above-mentioned known epoxy resin can be used. (B) A hardener can be used as the above-mentioned known hardener.

(C)丙烯酸樹脂係兼具可撓性與強度而為高韌性。較佳之丙烯酸樹脂，為Tg(玻璃轉移溫度)為-50℃~50℃，且使具有環氧基、縮水甘油基、醇性羥基、酚性羥基或羧基作為交聯性官能基之單體聚合而得的含有交聯性官能基之(甲基)丙烯酸共聚物。進一步地，若含有丙烯腈等而顯示橡膠特性時，可得更高韌性。 (C) The acrylic resin has high flexibility as well as flexibility and strength. A preferred acrylic resin is a Tg (glass transition temperature) of -50 ° C to 50 ° C, and a monomer having an epoxy group, a glycidyl group, an alcoholic hydroxyl group, a phenolic hydroxyl group or a carboxyl group as a crosslinkable functional group. The resulting (meth)acrylic copolymer containing a crosslinkable functional group. Further, when acrylonitrile or the like is contained to exhibit rubber properties, higher toughness can be obtained.

又，關於(C)苯氧樹脂，苯氧樹脂係分子鏈長，與環氧樹脂構造類似，於高交聯密度之組成物中作為可撓性 材料而作用，會賦予高韌性，因此雖為高強度但可得到強韌的組成物。較佳之苯氧樹脂，為主骨架為雙酚A型者，其他可列舉雙酚F型苯氧樹脂、雙酚A/F混合型苯氧樹脂或溴化苯氧樹脂等市售之苯氧樹脂作為較佳者。 Further, regarding (C) phenoxy resin, the phenoxy resin has a molecular chain length similar to that of an epoxy resin, and is flexible as a composition having a high crosslinking density. The material acts to impart high toughness, so that although it is high in strength, a tough composition can be obtained. A preferred phenoxy resin is a bisphenol A type as a main skeleton, and other commercially available phenoxy resins such as bisphenol F type phenoxy resin, bisphenol A/F mixed phenoxy resin or brominated phenoxy resin may be mentioned. As a better.

(D)經表面處理之無機填充材，可列舉經偶合劑表面處理之無機填充劑。無機填充材，可使用上述公知之無機填充劑，例如二氧化矽、氧化鋁。藉由經偶合劑表面處理，無機填充劑之分散性成為良好。因此，可得到流動性優良的接著劑層4，故可提高與金屬層3之接著力。又，可使無機填充劑成為高填充，因此可降低吸水率，提高耐濕性。 (D) The surface-treated inorganic filler may, for example, be an inorganic filler surface-treated with a coupling agent. As the inorganic filler, the above-mentioned known inorganic fillers such as cerium oxide or aluminum oxide can be used. The dispersibility of the inorganic filler is good by surface treatment with a coupling agent. Therefore, the adhesive layer 4 excellent in fluidity can be obtained, so that the adhesion to the metal layer 3 can be improved. Further, since the inorganic filler can be made highly filled, the water absorption rate can be lowered and the moisture resistance can be improved.

例如以矽烷偶合劑所進行之無機填充材之表面處理，係藉由公知方法，使無機填充材分散於矽烷偶合劑溶液中，藉以使無機填充劑之表面所存在的羥基與矽烷偶合劑之烷氧基等之水解基被水解而得的矽醇基反應，於無機填充劑之表面生成Si-O-Si鍵結來進行。 For example, the surface treatment of the inorganic filler by the decane coupling agent is carried out by dispersing the inorganic filler in the decane coupling agent solution by a known method, whereby the hydroxyl group present on the surface of the inorganic filler and the hexane of the decane coupling agent are used. The reaction of the thiol group obtained by hydrolysis of a hydrolyzable group such as an oxy group is carried out by forming a Si—O—Si bond on the surface of the inorganic filler.

接著劑層4之厚度並無特殊限制，通常由操作性之觀點而言，較佳為3μm以上、更佳為5μm以上，為了有助於半導體封裝之薄型化，較佳為100μm以下、更佳為50μm以下。接著劑層4可由單層構成亦可由複數層構成。 The thickness of the layer 4 is not particularly limited, and is usually preferably 3 μm or more, and more preferably 5 μm or more from the viewpoint of workability. In order to contribute to thinning of the semiconductor package, it is preferably 100 μm or less. It is 50 μm or less. The subsequent agent layer 4 may be composed of a single layer or a plurality of layers.

又，接著劑層4，於B階(未硬化狀態或半硬化狀態)下，較佳為與金屬層3之剝離力(23℃、剝離角度180度、線速300mm/分)為0.3N以上。剝離力未達 0.3N時，單片化(切割)時，係有於接著劑層4與金屬層3之間產生剝離之虞。 Further, in the B layer (unhardened state or semi-hardened state), the adhesive layer 4 preferably has a peeling force (23° C., a peeling angle of 180 degrees, and a line speed of 300 mm/min) to the metal layer 3 of 0.3 N or more. . Peeling force is not up to At 0.3 N, when dicing (cutting), peeling occurs between the adhesive layer 4 and the metal layer 3.

接著劑層4之吸水率，較佳為1.5vol%以下。吸水率之測定方法如下所述。亦即，以50×50mm大小之接著劑層4(薄膜狀接著劑)為樣品，將樣品於真空乾燥機中，120℃、3小時乾燥，於乾燥器中放冷後，測定乾燥質量，作為M1。將樣品於室溫下浸漬於蒸餾水24小時後取出，將樣品表面以濾紙擦拭，迅速秤量，作為M2。吸水率係由下式(1)算出。 The water absorption rate of the layer 4 is preferably 1.5 vol% or less. The method of measuring the water absorption rate is as follows. That is, a 50×50 mm adhesive layer 4 (film-like adhesive) was used as a sample, and the sample was dried in a vacuum dryer at 120° C. for 3 hours, and then allowed to cool in a desiccator, and the dry mass was measured as M1. The sample was immersed in distilled water at room temperature for 24 hours, and then taken out, and the surface of the sample was wiped with a filter paper and quickly weighed to obtain M2. The water absorption rate is calculated by the following formula (1).

吸水率(vol%)=[(M2-M1)/(M1/d)]×100 (1) 此處，d為薄膜之密度。 Water absorption rate (vol%) = [(M2-M1) / (M1/d)] × 100 (1) Here, d is the density of the film.

吸水率超過1.5vol%時，係有因吸水之水分而於焊接回焊時產生封裝龜裂之虞。 When the water absorption rate exceeds 1.5 vol%, there is a problem that a package crack occurs during solder reflow due to moisture absorption.

接著劑層4之飽和吸濕率，較佳為1.0vol%以下。飽和吸濕率之測定方法如下所述。亦即，以直徑100mm之圓形的接著劑層4(薄膜狀接著劑)為樣品，將樣品於真空乾燥機中，120℃、3小時乾燥，於乾燥器中放冷後，測定乾燥質量，作為M1。將樣品於85℃、85%RH之恆溫恆濕槽中吸濕168小時後取出，迅速秤量，作為M2。飽和吸濕率係由下式(2)算出。 The saturated moisture absorption rate of the layer 4 is preferably 1.0 vol% or less. The method for measuring the saturated moisture absorption rate is as follows. That is, a circular adhesive layer 4 (film-like adhesive) having a diameter of 100 mm was used as a sample, and the sample was dried in a vacuum dryer at 120 ° C for 3 hours, and after cooling in a desiccator, the dry mass was measured. As M1. The sample was taken up in a constant temperature and humidity chamber at 85 ° C and 85% RH for 168 hours, and then taken out, and quickly weighed as M2. The saturated moisture absorption rate is calculated by the following formula (2).

飽和吸濕率(vol%)=[(M2-M1)/(M1/d)]×100 (2) 此處，d為薄膜之密度。 Saturated moisture absorption rate (vol%) = [(M2-M1) / (M1/d)] × 100 (2) Here, d is the density of the film.

飽和吸濕率超過1.0vol%時，係有因回焊時之吸濕而使蒸氣壓之值變高，無法得到良好的回焊特性之虞。 When the saturated moisture absorption rate exceeds 1.0 vol%, the value of the vapor pressure is increased due to moisture absorption during reflow, and good reflow characteristics cannot be obtained.

接著劑層4之殘存揮發成分，較佳為3.0wt%以下。殘存揮發成分之測定方法係如下所述。亦即，係以50×50mm大小之接著劑層4(薄膜狀接著劑)為樣品，測定樣品之初期質量，作為M1，將樣品於熱風循環恆溫槽中，200℃、2小時加熱後，秤量並作為M2。殘存揮發成分係由下式(3)算出。 The residual volatile component of the layer 4 is preferably 3.0% by weight or less. The method for measuring the residual volatile component is as follows. That is, the adhesive layer 4 (film-like adhesive) having a size of 50×50 mm is used as a sample, and the initial mass of the sample is measured. As M1, the sample is heated in a hot air circulation thermostat at 200° C. for 2 hours, and then weighed. And as M2. The residual volatile component is calculated by the following formula (3).

殘存揮發成分(wt%)=[(M2-M1)/M1]×100 (3) Residual volatile components (wt%) = [(M2-M1)/M1] × 100 (3)

殘存揮發成分超過3.0wt%時，係有因封裝時之加熱而使溶劑揮發，於接著劑層4之內部產生孔隙，產生封裝龜裂之虞。 When the residual volatile component exceeds 3.0% by weight, the solvent is volatilized by heating during the encapsulation, and pores are formed inside the adhesive layer 4 to cause cracking of the package.

金屬層3之線膨脹係數相對於接著劑層4之線膨脹係數的比(金屬層3之線膨脹係數/接著劑層4之線膨脹係數)，較佳為0.2以上。該比未達0.2時，金屬層3與接著劑層4之間變得容易產生剝離，而有於封裝時產生封裝龜裂，使信賴性降低之虞。 The ratio of the linear expansion coefficient of the metal layer 3 to the linear expansion coefficient of the adhesive layer 4 (the linear expansion coefficient of the metal layer 3 / the linear expansion coefficient of the adhesive layer 4) is preferably 0.2 or more. When the ratio is less than 0.2, peeling tends to occur between the metal layer 3 and the adhesive layer 4, and package cracking occurs during packaging, and reliability is lowered.

本實施形態之電子裝置封裝用膠帶1，基材膠帶2與金屬層3之黏著力P1為0.01~0.5N/25mm、基材膠帶2與黏著膠帶5之黏著力P2為0.01~0.5N/25mm、基材 膠帶2與金屬層3之黏著力P1及基材膠帶2與黏著膠帶5之黏著力P2的比P1/P2為0.1~10。 In the tape 1 for electronic device packaging of the embodiment, the adhesion force P1 of the substrate tape 2 and the metal layer 3 is 0.01 to 0.5 N/25 mm, and the adhesion force P2 of the substrate tape 2 and the adhesive tape 5 is 0.01 to 0.5 N/25 mm. Substrate The ratio P1/P2 of the adhesive force P1 of the adhesive tape 2 to the metal layer 3 and the adhesive force P2 of the base tape 2 and the adhesive tape 5 is 0.1 to 10.

黏著力係根據JIS Z0237，於23℃、50%RH之環境下，將切割為寬25mm×長300mm之尺寸的基材膠帶2貼合於被黏著體，使用萬能型拉伸試驗機以剝離角度180°、剝離速度300mm/min測定。被黏著體，於測定黏著力P1時，為金屬層3、接著劑層4、及黏著膠帶5之層合體的金屬層3表面，於測定黏著力P2時，為黏著膠帶5之黏著劑層表面。 Adhesive force is based on JIS Z0237, and the substrate tape 2 cut into a width of 25 mm × 300 mm in length is attached to the adherend in an environment of 23 ° C and 50% RH, and a universal tensile tester is used to peel the angle. The measurement was performed at 180° and a peeling speed of 300 mm/min. When the adhesive force P1 is measured, the surface of the metal layer 3 of the laminate of the metal layer 3, the adhesive layer 4, and the adhesive tape 5 is the surface of the adhesive layer of the adhesive tape 5 when the adhesive force P2 is measured. .

基材膠帶2與金屬層3之黏著力P1若為0.01N/25mm以上，則於電子裝置封裝用膠帶1之製造過程中，金屬層3充分被保持於基材膠帶2，可良好地進行預切加工等。黏著力P1若為0.5N/25mm以下，於電子裝置封裝用膠帶1之製造過程中，將金屬層3及接著劑層4切斷為特定形狀後，可將該特定形狀之周邊的不要部分自基材膠帶2容易地剝離而去除(參照圖3(D))。又，黏著力P1太高時，使用電子裝置封裝用膠帶1時，欲剝離基材膠帶2時，於剝離方向施加過強的力，於金屬層3及接著劑層4之層合體會產生皺褶。黏著力P1若為0.5N/25mm以下，使用電子裝置封裝用膠帶1時，可將金屬層3自基材膠帶2良好地剝離。 When the adhesive force P1 of the base tape 2 and the metal layer 3 is 0.01 N/25 mm or more, the metal layer 3 is sufficiently held in the base tape 2 during the manufacturing process of the tape 1 for electronic device packaging, and can be favorably advanced. Cutting processing, etc. When the adhesive force P1 is 0.5 N/25 mm or less, after the metal layer 3 and the adhesive layer 4 are cut into a specific shape in the manufacturing process of the electronic device packaging tape 1, the unnecessary portion around the specific shape can be self-selected. The base tape 2 is easily peeled off and removed (refer to FIG. 3(D)). When the adhesive tape P1 is too high, when the tape 1 for electronic device packaging is used, when the base tape 2 is peeled off, an excessive force is applied in the peeling direction, and wrinkles are formed in the laminate of the metal layer 3 and the adhesive layer 4. Pleats. When the adhesive force P1 is 0.5 N/25 mm or less, when the tape 1 for electronic device packaging is used, the metal layer 3 can be favorably peeled off from the base tape 2 .

基材膠帶2與黏著膠帶5之黏著力P2若為0.01N/25mm以上，於電子裝置封裝用膠帶1之製造過程中，黏著膠帶5充分被保持於基材膠帶2，可良好地進行 預切加工等。又，使用電子裝置封裝用膠帶1時，係將基材膠帶2慢慢地自黏著膠帶5之一端部剝離，藉由基材膠帶2之剝離，一邊控制施加於電子裝置封裝用膠帶1之張力，一邊隨時將黏著膠帶5貼合於環狀框架R，但黏著力P2太低時，剝離基材膠帶2之前，黏著膠帶5可能自基材膠帶2剝離，使空氣進入。空氣進入黏著膠帶5與基材膠帶2之間時，變得無法控制藉著基材膠帶2之剝離而對電子裝置封裝用膠帶1施加的張力，因此隨時將黏著膠帶5貼合於環狀框架R時，皺褶會出現在黏著膠帶5或層合於其上之接著劑層4、金屬層3。黏著力P2若為0.01N/25mm以上，則可抑制剝離基材膠帶2之前，黏著膠帶5自基材膠帶2剝離而使空氣進入，可將黏著膠帶5良好地貼合於環狀框架。再者，剝離基材膠帶2之前黏著膠帶5自基材膠帶2剝離而使空氣進入的要因，可列舉例如下述者。將長形之電子裝置封裝用膠帶1，自捲繞為輥狀之捲繞體，依次捲出經預切之黏著膠帶5、接著劑層4及金屬層3之層合體，藉由配置於往載置有環狀框架R之貼合台搬送的路徑之搬送輔助輥，黏著膠帶5被拉超過基材膠帶2，此時，剝離力P2太低時，黏著膠帶5之端部會由基材膠帶2浮起而剝離，使空氣進入。 When the adhesive force P2 of the base tape 2 and the adhesive tape 5 is 0.01 N/25 mm or more, the adhesive tape 5 is sufficiently held in the base tape 2 during the manufacturing process of the tape 1 for electronic device packaging, and can be performed favorably. Pre-cut processing, etc. When the tape 1 for electronic device packaging is used, the base tape 2 is gradually peeled off from one end of the adhesive tape 5, and the tension applied to the tape 1 for electronic device packaging is controlled by the peeling of the base tape 2. While the adhesive tape 5 is attached to the annular frame R at any time, when the adhesive force P2 is too low, the adhesive tape 5 may be peeled off from the base tape 2 before the substrate tape 2 is peeled off, and air is allowed to enter. When the air enters between the adhesive tape 5 and the substrate tape 2, the tension applied to the electronic device packaging tape 1 by the peeling of the substrate tape 2 cannot be controlled, so that the adhesive tape 5 is attached to the ring frame at any time. At the time of R, the wrinkles may appear on the adhesive tape 5 or the adhesive layer 4 and the metal layer 3 laminated thereon. When the adhesive force P2 is 0.01 N/25 mm or more, before the base tape 2 is peeled off, the adhesive tape 5 is peeled off from the base tape 2 to allow air to enter, and the adhesive tape 5 can be favorably bonded to the annular frame. In addition, the reason why the adhesive tape 5 peels from the base tape 2 and the air enters before peeling the base tape 2 is mentioned, for example. The elongate electronic device encapsulating tape 1 is wound from a wound body in a roll shape, and the pre-cut adhesive tape 5, the adhesive layer 4, and the metal layer 3 are sequentially wound up, and disposed. The transfer auxiliary roller on the path in which the bonding table of the annular frame R is placed, the adhesive tape 5 is pulled over the base tape 2, and when the peeling force P2 is too low, the end of the adhesive tape 5 is made of the substrate. The tape 2 floats and peels off, allowing air to enter.

黏著力P2若為0.5N/25mm以下，於電子裝置封裝用膠帶1之製造過程中，將黏著膠帶5切斷為特定形狀後，可將該特定形狀之周邊的不要部分自基材膠帶2容易地剝離而去除(圖3(D)參照)。又，黏著力P2太高 時，使用電子裝置封裝用膠帶1時，欲剝離基材膠帶2時，於剝離方向施加過強的力，於金屬層3及接著劑層4之層合體會產生皺褶。黏著力P2若為0.5N/25mm以下，使用電子裝置封裝用膠帶1時，可將黏著膠帶5自基材膠帶2良好地剝離。 When the adhesive force P2 is 0.5 N/25 mm or less, in the manufacturing process of the electronic device packaging tape 1, after the adhesive tape 5 is cut into a specific shape, the unnecessary portion around the specific shape can be easily made from the base tape 2 The ground is peeled off and removed (refer to Fig. 3 (D)). Also, the adhesion P2 is too high When the tape 1 for electronic device packaging is used, when the base tape 2 is peeled off, an excessive force is applied in the peeling direction, and wrinkles are formed in the laminate of the metal layer 3 and the adhesive layer 4. When the adhesive force P2 is 0.5 N/25 mm or less, when the tape 1 for electronic device packaging is used, the adhesive tape 5 can be peeled off favorably from the base tape 2.

基材膠帶2與金屬層3之黏著力P1及基材膠帶2與黏著膠帶5之黏著力P2的差距過大時，使用電子裝置封裝用膠帶1時，剝離基材膠帶2，而欲將金屬層3、接著劑層4及標籤部5a之層合體的標籤部5a周緣部貼合於環狀框架R時，將基材膠帶2僅自黏著膠帶5之部分剝離所需的力與自金屬層3之面積大的部分剝離所需的力之差距變大，於剝離需要較大之力的部分，層合體被往基材膠帶2側拉伸，於能夠以較小之力剝離的部分，係由往基材膠帶2側拉伸之力釋放，因此於層合體產生皺褶，無法良好地貼合於環狀框架R。P1/P2若為0.1~10，則可在不於電子裝置封裝用膠帶1產生皺褶的情況下，良好地貼合於環狀框架R。 When the adhesive force P1 between the base tape 2 and the metal layer 3 and the adhesive force P2 between the base tape 2 and the adhesive tape 5 are too large, when the tape 1 for electronic device packaging is used, the substrate tape 2 is peeled off, and the metal layer is to be peeled off. 3. When the peripheral portion of the label portion 5a of the laminate of the adhesive layer 4 and the label portion 5a is bonded to the annular frame R, the force required to peel the base tape 2 from only the portion of the adhesive tape 5 is from the metal layer 3 The difference in the force required for the partial peeling of the large area becomes large, and in the portion where the peeling requires a large force, the laminate is stretched toward the side of the base tape 2, and the portion which can be peeled off with a small force is Since the force of stretching to the side of the base tape 2 is released, wrinkles are formed in the laminate, and the ring frame R cannot be adhered well. When the P1/P2 is 0.1 to 10, the ring frame R can be favorably bonded to the tape 1 for the electronic device packaging without wrinkles.

欲使黏著力P1、P2及P1/P2成為上述範圍，可調整基材膠帶2或黏著膠帶5之黏彈性或厚度、或調整金屬層3之表面粗度。調整金屬層3之表面粗度的情況時，可對金屬層3之與基材膠帶2鄰接之側的面進行矽烷偶合劑處理、電漿處理、臭氧水處理、紫外線臭氧處理、離子束處理等之表面處理。又，使用電解箔作為金屬層3時，亦可於製箔時調整接觸於電解液之消光面的表面粗 度。 In order to make the adhesion forces P1, P2, and P1/P2 into the above ranges, the viscoelasticity or thickness of the base tape 2 or the adhesive tape 5 or the surface roughness of the metal layer 3 can be adjusted. When the surface roughness of the metal layer 3 is adjusted, the surface of the metal layer 3 adjacent to the substrate tape 2 may be subjected to a decane coupling agent treatment, a plasma treatment, an ozone water treatment, an ultraviolet ozone treatment, an ion beam treatment, or the like. Surface treatment. Further, when an electrolytic foil is used as the metal layer 3, the surface of the matte surface which is in contact with the electrolytic solution can be adjusted at the time of foil formation. degree.

接著說明本實施形態之電子裝置封裝用膠帶1之製造方法。首先，準備長形之金屬層3。金屬層3只要使用市售之金屬箔即可。接著，如圖3(A)所示，將金屬層3使用貼合輥r等貼合於長形之基材膠帶2的黏著面。 Next, a method of manufacturing the tape 1 for electronic device packaging of the present embodiment will be described. First, an elongated metal layer 3 is prepared. As long as the metal layer 3 is a commercially available metal foil. Next, as shown in FIG. 3(A), the metal layer 3 is bonded to the adhesive surface of the elongated base tape 2 using a bonding roll r or the like.

另外形成長形薄膜狀之接著劑層4。接著劑層4可利用配製樹脂組成物而形成為薄膜狀之層的慣用方法來形成。具體而言，可列舉例如於適當之分隔件(剝離紙等)上塗佈前述樹脂組成物並乾燥(熱硬化為必要時的情況等，係依需要實施加熱處理而乾燥)，來形成接著劑層4之方法等。前述樹脂組成物可為溶液亦可為分散液。 Further, an adhesive film layer 4 having an elongated film shape is formed. The subsequent agent layer 4 can be formed by a conventional method of forming a film-like layer by formulating a resin composition. Specifically, for example, the resin composition is applied to a suitable separator (release paper or the like) and dried (heat curing is necessary, and the like, if necessary, dried by heat treatment) to form an adhesive. The method of layer 4 and the like. The resin composition may be a solution or a dispersion.

接著，如圖3(B)所示，於貼合於基材膠帶2之金屬層3上，使用貼合輥r等貼合自分隔件剝離的接著劑層4。 Next, as shown in FIG. 3(B), the adhesive layer 4 peeled off from the separator is bonded to the metal layer 3 bonded to the base tape 2 by using a bonding roll r or the like.

再者，上述係於基材膠帶2貼合金屬層3後，於金屬層3上貼合接著劑層4，但亦可於貼合金屬層3與接著劑層4後，將金屬層3側之面貼合於基材膠帶2。 Further, after the metal layer 3 is bonded to the base tape 2, the adhesive layer 4 is bonded to the metal layer 3. However, after the metal layer 3 and the adhesive layer 4 are bonded, the metal layer 3 side may be bonded. The surface is attached to the substrate tape 2.

接著，如圖3(C)所示，使用壓切刀等，將接著劑層4及金屬層3預切為特定形狀(此處為圓形形狀)，如圖3(D)所示，將周邊之不要部分6自基材膠帶2剝離而去除。此時，基材膠帶2與金屬層3之黏著力P1為0.01N/25mm以上且0.5N/25mm以下，因此金屬層3 被充分地黏著固定於基材膠帶2，而且可將不要部分6容易地自基材膠帶2剝離，因此可良好地進行預切加工。再者，預切不限於上述，亦可使用外緣為圓形形狀之格子狀的壓切齒，將接著劑層4及金屬層3預先單片化為對應於半導體晶片C之大小等之特定大小。 Next, as shown in FIG. 3(C), the adhesive layer 4 and the metal layer 3 are pre-cut into a specific shape (here, a circular shape) using a press cutter or the like, as shown in FIG. 3(D), The peripheral portion 6 is removed from the base tape 2 and removed. At this time, the adhesion force P1 between the base tape 2 and the metal layer 3 is 0.01 N/25 mm or more and 0.5 N/25 mm or less, so the metal layer 3 The adhesive tape 2 is sufficiently adhered and fixed, and the unnecessary portion 6 can be easily peeled off from the base tape 2, so that the pre-cut processing can be performed favorably. Further, the pre-cutting is not limited to the above, and the bonding layer 4 and the metal layer 3 may be preliminarily formed into a specific size corresponding to the size of the semiconductor wafer C or the like using a lattice-shaped cutting tooth having a circular outer shape. .

再者，於基材膠帶2上形成特定形狀之金屬層3及接著劑層4的方法，不限定於上述者，可將長形之金屬層3貼合於長形之基材膠帶2，衝壓為特定形狀，將不要部分6去除後，將形成為特定形狀之接著劑層4貼合於特定形狀之金屬層3上，亦可將預先各自形成為特定形狀之金屬層3與接著劑層4貼合於基材膠帶2，但由製造步驟之簡便性而言，較佳為藉由上述圖3(A)~(D)所示之步驟製造。 Further, the method of forming the metal layer 3 and the adhesive layer 4 having a specific shape on the base tape 2 is not limited to the above, and the elongated metal layer 3 can be bonded to the elongated base tape 2 and punched. After the unnecessary portion 6 is removed for a specific shape, the adhesive layer 4 formed into a specific shape is attached to the metal layer 3 of a specific shape, and the metal layer 3 and the adhesive layer 4 which are each formed into a specific shape in advance may be used. It is bonded to the base tape 2, but it is preferable to manufacture by the procedure shown in the above-mentioned FIG. 3 (A) - (D) from the simplicity of a manufacturing process.

又，另外製作黏著膠帶5。基材薄膜可藉由以往公知之製膜方法製膜。該製膜方法可例示例如壓延製膜法、於有機溶劑中之澆鑄法、於密閉系統之吹脹擠出法、T模擠出法、共擠出法、乾疊合法等。接著，於基材薄膜上塗佈黏著劑層組成物並乾燥(依需要加熱交聯)而形成黏著劑層。塗佈方式可列舉輥塗覆、網版塗覆、凹版塗覆等。再者，可將黏著劑層組成物直接塗佈於基材薄膜，於基材薄膜上形成黏著劑層，又，亦可將黏著劑層組成物塗佈於表面進行過剝離處理之剝離紙等而形成黏著劑層後，將該黏著劑層轉印於基材薄膜。藉此，製作於基材薄膜上形成有黏著劑層之黏著膠帶5。 Further, an adhesive tape 5 was separately prepared. The base film can be formed by a conventionally known film forming method. The film forming method may, for example, be a calendering film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, or the like. Next, an adhesive layer composition is applied onto the base film and dried (heat-crosslinking as needed) to form an adhesive layer. The coating method may be, for example, roll coating, screen coating, gravure coating or the like. Further, the adhesive layer composition may be directly applied to the base film to form an adhesive layer on the base film, or the adhesive layer composition may be applied to a release paper such as a release process. After the adhesive layer is formed, the adhesive layer is transferred to the substrate film. Thereby, the adhesive tape 5 in which the adhesive layer was formed on the base film was produced.

之後，如圖4(A)所示，於基材膠帶2上所設置之特定形狀的金屬層3及接著劑層4之接著劑層4側的面上，以黏著膠帶5之黏著劑層側的面接觸的方式疊合黏著膠帶5。此時，基材膠帶2與黏著膠帶5之黏著力P2為0.01N/25mm以上，因此黏著膠帶5被充分地黏著固定於基材膠帶2，可良好地進行疊合。 Thereafter, as shown in FIG. 4(A), on the side of the adhesive layer 5 of the adhesive tape 5 on the surface of the metal layer 3 of the specific shape provided on the base tape 2 and the adhesive layer 4 side of the adhesive layer 4. The adhesive tape 5 is laminated in a manner of surface contact. At this time, since the adhesive force P2 of the base tape 2 and the adhesive tape 5 is 0.01 N/25 mm or more, the adhesive tape 5 is sufficiently adhered and fixed to the base tape 2, and can be superposed|stacked favorable.

接著，如圖4(B)所示，將黏著膠帶5使用壓切刀等預切為特定形狀，如圖4(C)所示，藉由將周邊之不要部分7由基材膠帶2剝離而去除，製作電子裝置封裝用膠帶1。此時，黏著力P2為0.5N/25mm以下，因此可容易地將不要部分7由基材膠帶2剝離而去除。 Next, as shown in FIG. 4(B), the adhesive tape 5 is pre-cut into a specific shape using a press cutter or the like, and as shown in FIG. 4(C), the peripheral unnecessary portion 7 is peeled off from the base tape 2 The tape 1 for electronic device packaging is removed. At this time, since the adhesive force P2 is 0.5 N/25 mm or less, the unnecessary portion 7 can be easily removed by peeling off the base tape 2 and removed.

<使用方法> <How to use>

一邊參照圖5~圖7一邊說明使用本實施形態之電子裝置封裝用膠帶1來製造電子裝置封裝8之方法。再者，本實施形態中，作為電子裝置封裝8，係以覆晶連接於被黏著體9上之半導體晶片C為例來說明。 A method of manufacturing the electronic device package 8 using the tape 1 for electronic device packaging of the present embodiment will be described with reference to FIGS. 5 to 7. Further, in the present embodiment, the electronic device package 8 will be described by taking a semiconductor wafer C which is flip-chip bonded to the adherend 9 as an example.

〔半導體晶圓W之裝配步驟〕 [Assembly Step of Semiconductor Wafer W]

首先，準備與本發明之電子裝置封裝用膠帶1之黏著膠帶5同樣的另外之切割膠帶D，於該切割膠帶D上之中央部，如圖5(A)表示，貼附半導體晶圓W，將其黏著保持並固定(半導體晶圓W之裝配步驟)，而且於切割膠帶D之周緣部貼合環狀框架R。此時，切割膠帶D係 貼附於半導體晶圓W之背面。半導體晶圓W之背面，意指與電路面相反側之面(亦稱為非電路面、非電極形成面等)。貼附方法並無特殊限定，較佳為加熱壓接之方法。壓接通常係藉由壓接輥等之按壓手段一邊按壓來進行。 First, another dicing tape D similar to the adhesive tape 5 of the tape 1 for electronic device packaging of the present invention is prepared, and the semiconductor wafer W is attached to the central portion of the dicing tape D as shown in FIG. 5(A). The adhesive tape is held and fixed (the assembly step of the semiconductor wafer W), and the annular frame R is bonded to the peripheral edge portion of the dicing tape D. At this time, the cutting tape D system Attached to the back side of the semiconductor wafer W. The back surface of the semiconductor wafer W means a surface opposite to the circuit surface (also referred to as a non-circuit surface, a non-electrode forming surface, etc.). The attachment method is not particularly limited, and is preferably a method of heating and crimping. The pressure bonding is usually performed by pressing by a pressing means such as a pressure roller.

〔半導體晶圓W之切割步驟〕 [Cutting step of semiconductor wafer W]

接著，如圖5(B)表示，進行半導體晶圓W之切割。藉此，將半導體晶圓W切斷為特定尺寸進行單片化(小片化)，以製造半導體晶片C。切割例如係由半導體晶圓W之電路面側起遵照一般方法進行。又，本步驟中，例如可採用進行切入至切割膠帶D為止之稱為全切(fullcut)的切斷方式等。本步驟所用之切割裝置並無特殊限定，可使用以往公知者。再者，進行切割膠帶D之擴展時，該擴展可使用以往公知之擴展裝置進行。 Next, as shown in FIG. 5(B), the semiconductor wafer W is cut. Thereby, the semiconductor wafer W is cut into a specific size and diced (small-sized) to manufacture the semiconductor wafer C. The dicing is performed, for example, from the circuit surface side of the semiconductor wafer W in accordance with a general method. Moreover, in this step, for example, a cutting method called full cut that cuts into the dicing tape D can be used. The cutting device used in this step is not particularly limited, and a conventionally known one can be used. Further, when the expansion of the dicing tape D is performed, the expansion can be performed using a conventionally known expansion device.

〔半導體晶片C之拾取步驟〕 [Pickup Step of Semiconductor Wafer C]

如圖5(C)表示，進行半導體晶片C之拾取，將半導體晶片C由切割膠帶D剝離。拾取之方法並無特殊限定，可採用以往公知之各種方法。例如，將貼合有半導體晶片C及環狀框架R之切割膠帶D，以基材薄膜側朝下，載置於拾取裝置之載台S上，於經固定環狀框架R之狀態下，使中空圓柱形狀之頂起構件T上昇，擴張切割膠帶D。可列舉於此狀態下，將個別的半導體晶片C藉由針N由切割膠帶D之基材薄膜側頂起，且將頂起之半導體晶片 C以拾取裝置拾取之方法等。 As shown in FIG. 5(C), the semiconductor wafer C is picked up, and the semiconductor wafer C is peeled off from the dicing tape D. The method of picking up is not particularly limited, and various methods known in the art can be employed. For example, the dicing tape D to which the semiconductor wafer C and the annular frame R are bonded is placed on the stage S of the pickup device with the substrate film side facing downward, and is fixed by the annular frame R. The jacking member T of the hollow cylindrical shape rises and expands the cutting tape D. In this state, the individual semiconductor wafers C are lifted up from the substrate film side of the dicing tape D by the needle N, and the semiconductor wafer to be lifted up C is a method of picking up by a pick-up device or the like.

〔覆晶連接步驟〕 [Crystalline connection step]

所拾取之半導體晶片C，如圖5(D)表示，係藉由覆晶接合方式(覆晶構裝方式)固定於基板等之被黏著體9。具體而言，係遵照一般方法，將半導體晶片C，以半導體晶片C之電路面(亦稱為表面、電路圖型形成面、電極形成面等)與被黏著體9對向之形態，固定於被黏著體9。例如，首先使助焊劑附著於形成於半導體晶片C之電路面側的作為連接部之凸塊10。接著，使半導體晶片C之凸塊10接觸於被黏合於被黏著體9之連接墊的接合用之導電材11(銲錫等)，一邊按壓一邊使凸塊10及導電材11熔融，藉此可確保半導體晶片C與被黏著體9之電性導通，使半導體晶片C固定於被黏著體9(覆晶接合步驟)。此時，半導體晶片C與被黏著體9之間係形成有空隙，其空隙間距離，一般而言為30μm~300μm左右。殘存於半導體晶片C與被黏著體9之對向面或間隙中的助焊劑係被洗淨去除。 As shown in FIG. 5(D), the semiconductor wafer C picked up is fixed to the adherend 9 such as a substrate by a flip chip bonding method (flip-chip bonding method). Specifically, the semiconductor wafer C is fixed to the surface of the semiconductor wafer C (also referred to as a surface, a circuit pattern forming surface, an electrode forming surface, and the like) in opposition to the adherend 9 in accordance with a general method. Adhesive body 9. For example, first, the flux is attached to the bump 10 as a connection portion formed on the circuit surface side of the semiconductor wafer C. Then, the bumps 10 of the semiconductor wafer C are brought into contact with the bonding conductive material 11 (such as solder) bonded to the connection pads of the adherend 9, and the bumps 10 and the conductive material 11 are melted while being pressed. The semiconductor wafer C is electrically connected to the adherend 9 to fix the semiconductor wafer C to the adherend 9 (the flip chip bonding step). At this time, a gap is formed between the semiconductor wafer C and the adherend 9, and the distance between the gaps is generally about 30 μm to 300 μm. The flux remaining in the opposite surface or gap of the semiconductor wafer C and the adherend 9 is washed and removed.

作為被黏著體9，可使用引線框架或電路基板(配線電路基板等)等之各種基板。如此之基板的材質並無特殊限定，可列舉陶瓷基板、或塑膠基板。塑膠基板可列舉例如環氧樹脂基板、雙馬來醯亞胺三嗪基板、聚醯亞胺基板等。又，藉由以其他半導體晶片為被黏著體9，且將上述半導體晶片C予以覆晶連接，亦可成為晶片堆疊構 造(chip on chip)。 As the adherend 9, various substrates such as a lead frame or a circuit board (such as a printed circuit board) can be used. The material of such a substrate is not particularly limited, and examples thereof include a ceramic substrate or a plastic substrate. Examples of the plastic substrate include an epoxy resin substrate, a bismaleimide triazine substrate, and a polyimide substrate. Moreover, by using other semiconductor wafers as the adherends 9 and flip-chip bonding the semiconductor wafers C, the wafer stack structure can also be used. Chip on chip.

接著，如圖6(A)所示，將本實施形態之電子裝置封裝用膠帶1之基材膠帶2剝離，使金屬層3及黏著膠帶5之黏著劑層露出，將黏著劑層之周緣部固定於環狀框架R。此時，基材膠帶2與金屬層3之黏著力P1為0.5N/25mm以下，基材膠帶2與黏著膠帶5之黏著力P2為0.01N/25mm以上且0.5N/25mm以下，且基材膠帶2與金屬層3之黏著力P1及基材膠帶2與黏著膠帶5之黏著力P2的比P1/P2為0.1~10，因此可將基材膠帶2良好地剝離，於金屬層3、接著劑層4及黏著膠帶5之層合體上不會出現皺褶的情況下，良好地貼合於環狀框架R。 Next, as shown in FIG. 6(A), the base tape 2 of the tape 1 for electronic device packaging of the present embodiment is peeled off, and the adhesive layer of the metal layer 3 and the adhesive tape 5 is exposed, and the peripheral portion of the adhesive layer is exposed. Fixed to the annular frame R. At this time, the adhesion force P1 of the base tape 2 and the metal layer 3 is 0.5 N/25 mm or less, and the adhesion force P2 of the base tape 2 and the adhesive tape 5 is 0.01 N/25 mm or more and 0.5 N/25 mm or less, and the substrate. The ratio P1/P2 of the adhesive force P1 between the adhesive tape 2 and the metal layer 3 and the adhesive force P2 of the adhesive tape 2 and the adhesive tape 5 is 0.1 to 10, so that the base tape 2 can be peeled off well in the metal layer 3, and then When the wrinkles are not formed on the laminate of the agent layer 4 and the adhesive tape 5, the ring frame R is favorably bonded.

接著，如圖6(B)所示，將金屬層3及接著劑層4切斷為對應於半導體晶片C之大小而單片化。切斷可藉由與上述半導體晶圓W之切割步驟相同之步驟進行。再者，有進行將金屬層3及接著劑層4預先單片化之預切加工的情況時，不進行本步驟。 Next, as shown in FIG. 6(B), the metal layer 3 and the adhesive layer 4 are cut into pieces corresponding to the size of the semiconductor wafer C. The cutting can be performed by the same steps as the cutting step of the semiconductor wafer W described above. In the case where the pre-cut processing for pre-single the metal layer 3 and the adhesive layer 4 is performed, this step is not performed.

接著，如圖6(C)所示，將經單片化之金屬層3及接著劑層4進行拾取，由黏著膠帶5剝離。拾取可藉由與上述半導體晶片C之拾取步驟相同之步驟進行。 Next, as shown in FIG. 6(C), the singulated metal layer 3 and the adhesive layer 4 are picked up and peeled off by the adhesive tape 5. The pickup can be performed by the same steps as the pickup step of the above-described semiconductor wafer C.

接著，將經拾取之金屬層3及接著劑層4之接著劑層4側，如圖7所示，貼合於經覆晶連接之半導體晶片C的背面。之後，於附有金屬層3之半導體晶片C的周邊及半導體晶片C與被黏著體9之間隙中填充密封材(密封樹脂等)進行密封。密封係遵照一般方法進行。此 時，因為於半導體晶片C之背面設置有金屬層3，故於覆晶接合步驟中因半導體晶片C與被黏著體9之熱膨脹率差所產生的翹曲，會被半導體晶片C與金屬層3之熱膨脹率差所抵消。又，因為於半導體晶片C之背面設置有金屬層3，故作為電子裝置使用時之發熱係藉由金屬層3散熱。 Next, the side of the adhesive layer 4 of the picked-up metal layer 3 and the adhesive layer 4 is bonded to the back surface of the flip-chip bonded semiconductor wafer C as shown in FIG. Thereafter, a sealing material (a sealing resin or the like) is filled in the periphery of the semiconductor wafer C with the metal layer 3 and the gap between the semiconductor wafer C and the adherend 9 to be sealed. The sealing system is carried out in accordance with a general method. this At this time, since the metal layer 3 is provided on the back surface of the semiconductor wafer C, the warpage caused by the difference in thermal expansion coefficient between the semiconductor wafer C and the adherend 9 in the flip chip bonding step is caused by the semiconductor wafer C and the metal layer 3 The difference in thermal expansion rate is offset. Further, since the metal layer 3 is provided on the back surface of the semiconductor wafer C, heat generated during use as an electronic device is radiated by the metal layer 3.

再者，上述係說明了將金屬層3隔著接著劑層4直接設置於半導體晶片C之背面，金屬層3亦與半導體晶片C一起密封之封裝構造，但亦可於密封半導體晶片C後，將金屬層3隔著接著劑層4設置於於密封體之上側面。電子裝置封裝8，由於在密封時亦會產生翹曲，故藉由於密封體之上側面設置金屬層3，可抵消密封時之翹曲。 In the above description, the metal layer 3 is directly provided on the back surface of the semiconductor wafer C via the adhesive layer 4, and the metal layer 3 is also sealed together with the semiconductor wafer C. However, after the semiconductor wafer C is sealed, The metal layer 3 is provided on the upper surface of the sealing body via the adhesive layer 4. Since the electronic device package 8 is warped even when it is sealed, the warpage at the time of sealing can be offset by providing the metal layer 3 on the upper side surface of the sealing body.

再者，上述係以於被黏著體9上覆晶連接之半導體晶片C，作為電子裝置封裝8為例來說明，但不限定於此，例如，於半導體晶片上層合有相同尺寸之其他半導體晶片的電子裝置封裝構造中，為了使用本發明之電子裝置封裝用膠帶1之金屬層3作為兩晶片間之間隔件，亦可隔著接著劑層4於下側之半導體晶片上設置金屬層3。 In addition, the semiconductor wafer C which is flip-chip bonded to the adherend 9 is described as an example of the electronic device package 8. However, the present invention is not limited thereto. For example, other semiconductor wafers of the same size are laminated on the semiconductor wafer. In the electronic device package structure, in order to use the metal layer 3 of the tape 1 for electronic device packaging of the present invention as a spacer between the two wafers, the metal layer 3 may be provided on the semiconductor wafer on the lower side via the adhesive layer 4.

<實施例> <Example>

接著，為了使本發明之效果更加明確，係詳細地說明實施例及比較例，但本發明不限定於此等實施例。 Next, in order to clarify the effects of the present invention, the examples and comparative examples will be described in detail, but the present invention is not limited to the examples.

(1)黏著膠帶之製作 (1) Production of adhesive tape

作為基材薄膜，係製作以下者。 As the base film, the following were produced.

(基材薄膜a-1) (Substrate film a-1)

將藉由自由基聚合法所合成之乙烯-甲基丙烯酸-甲基丙烯酸乙酯(質量比8：1：1)3元共聚物之鋅離子聚合物a(密度0.96g/cm3、鋅離子含量4質量%、氯含量未達1質量%、維卡(Vicat)軟化點56℃、熔點86℃)之樹脂珠於140℃熔融，使用擠出機成形為厚度100μm之長形薄膜狀，藉以製作基材薄膜a-1。 A zinc ion polymer a (density 0.96 g/cm 3 , zinc ion) of a ethylene-methacrylic acid-ethyl methacrylate (mass ratio 8:1:1) ternary copolymer synthesized by a radical polymerization method The resin beads having a content of 4% by mass, a chlorine content of less than 1% by mass, a Vicat softening point of 56 ° C, and a melting point of 86 ° C were melted at 140 ° C, and formed into an elongated film having a thickness of 100 μm using an extruder. A base film a-1 was produced.

(基材薄膜a-2) (Substrate film a-2)

將日本Polychem公司製Novatec PP FW4B(聚丙烯)(密度：0.90g/cm3、維卡軟化點96℃、熔點：140℃)之樹脂珠於180℃熔融，使用擠出機成形為厚度100μm之長形薄膜狀，藉以製作基材薄膜a-2。 A resin bead of Novatec PP FW4B (polypropylene) (density: 0.90 g/cm 3 , Vicat softening point 96 ° C, melting point: 140 ° C) manufactured by Polychem Co., Ltd. of Japan was melted at 180 ° C, and formed into a thickness of 100 μm using an extruder. The film shape is long, whereby the base film a-2 is produced.

(黏著劑層組成物b-1) (adhesive layer composition b-1)

作為具有官能基之丙烯酸系共聚物(A1)，係配製由丙烯酸2-乙基己酯、丙烯酸2-羥基乙酯及甲基丙烯酸所成，且丙烯酸2-乙基己酯之比率為55莫耳%、質量平均分子量75萬之共聚物。接著，以碘價成為25的方式，添加甲基丙烯酸2-異氰酸基乙酯，配製玻璃轉移溫度-50℃、羥基價10gKOH/g、酸價5mgKOH/g之丙烯酸系共聚物(a1)。 The acrylic copolymer (A1) having a functional group is prepared by 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, and the ratio of 2-ethylhexyl acrylate is 55 mol. A copolymer of % ear and a mass average molecular weight of 750,000. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value became 25, and the acrylic copolymer (a1) having a glass transition temperature of -50 ° C, a hydroxyl group value of 10 gKOH/g, and an acid value of 5 mgKOH/g was prepared. .

將相對於丙烯酸系共聚物(a1)100質量份而言，添加作為聚異氰酸酯之CORONATE L(東曹股份有限公司製、商品名)3質量份，且添加作為光聚合起始劑之Esacure KIP 150(Lamberti公司製、商品名)3質量份的混合物，溶解於乙酸乙酯，攪拌而得到黏著劑層組成物b-1。 To 100 parts by mass of the acrylic copolymer (a1), 3 parts by mass of CORONATE L (manufactured by Tosoh Corporation, trade name) as a polyisocyanate was added, and Esacure KIP 150 as a photopolymerization initiator was added. A mixture of 3 parts by mass (manufactured by Lamberti Co., Ltd.) was dissolved in ethyl acetate and stirred to obtain an adhesive layer composition b-1.

(黏著劑層組成物b-2) (adhesive layer composition b-2)

作為具有官能基之丙烯酸系共聚物(A2)，係配製由丙烯酸2-乙基己酯、丙烯酸2-羥基乙酯及甲基丙烯酸所成，且丙烯酸2-乙基己酯之比率為70莫耳%、質量平均分子量75萬之共聚物。接著，以碘價成為20的方式，添加甲基丙烯酸2-異氰酸基乙酯，配製玻璃轉移溫度-50℃、羥基價15gKOH/g、酸價5mgKOH/g之丙烯酸系共聚物(a2)。 The acrylic copolymer (A2) having a functional group is prepared by 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, and the ratio of 2-ethylhexyl acrylate is 70 mol. A copolymer of % ear and a mass average molecular weight of 750,000. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value became 20, and the acrylic copolymer (a2) having a glass transition temperature of -50 ° C, a hydroxyl group of 15 gKOH/g, and an acid value of 5 mgKOH/g was prepared. .

將相對於丙烯酸系共聚物(a2)100質量份而言，添加作為聚異氰酸酯之CORONATE L(日東曹股份有限公司製、商品名)3質量份，且添加作為光聚合起始劑之Esacure KIP 150(Lamberti公司製、商品名)5質量份的混合物，溶解於乙酸乙酯，攪拌而得到黏著劑層組成物b-2。 To 100 parts by mass of the acrylic copolymer (a2), 3 parts by mass of CORONATE L (manufactured by Nitto Co., Ltd., trade name) as a polyisocyanate was added, and Esacure KIP 150 as a photopolymerization initiator was added. A mixture of 5 parts by mass (manufactured by Lamberti Co., Ltd.) was dissolved in ethyl acetate and stirred to obtain an adhesive layer composition b-2.

<黏著膠帶(1)> <Adhesive tape (1)>

將所配製之黏著劑層組成物b-1，於經脫模處 理之聚對苯二甲酸乙二酯薄膜所成的剝離襯墊上，以乾燥後之厚度成為10μm的方式進行塗覆，於110℃乾燥3分鐘後，與上述基材薄膜a-1貼合，製作於基材薄膜上形成有黏著劑層之黏著膠帶(1)。 The prepared adhesive layer composition b-1 is removed from the mold The release liner made of the polyethylene terephthalate film was coated so as to have a thickness of 10 μm after drying, and dried at 110 ° C for 3 minutes, and then bonded to the base film a-1. An adhesive tape (1) having an adhesive layer formed on the base film.

<黏著膠帶(2)> <Adhesive tape (2)>

將所配製之黏著劑層組成物b-2，於經脫模處理之聚對苯二甲酸乙二酯薄膜所成的剝離襯墊上，以乾燥後之厚度成為10μm的方式進行塗覆，於110℃乾燥3分鐘後，與上述基材薄膜a-1貼合，製作於基材薄膜上形成有黏著劑層之黏著膠帶(2)。 The prepared adhesive layer composition b-2 was coated on a release liner made of a release-treated polyethylene terephthalate film so as to have a thickness of 10 μm after drying. After drying at 110 ° C for 3 minutes, it was bonded to the base film a-1 to prepare an adhesive tape (2) having an adhesive layer formed on the base film.

<黏著膠帶(3)> <Adhesive tape (3)>

將所配製之黏著劑層組成物b-2，於經脫模處理之聚對苯二甲酸乙二酯薄膜所成的剝離襯墊上，以乾燥後之厚度成為10μm的方式進行塗覆，於110℃乾燥3分鐘後，與上述基材薄膜a-2貼合，製作於基材薄膜上形成有黏著劑層之黏著膠帶(3)。 The prepared adhesive layer composition b-2 was coated on a release liner made of a release-treated polyethylene terephthalate film so as to have a thickness of 10 μm after drying. After drying at 110 ° C for 3 minutes, it was bonded to the base film a-2 to prepare an adhesive tape (3) having an adhesive layer formed on the base film.

(2)接著劑層之製作 (2) Fabrication of the adhesive layer

(接著劑層組成物c-1) (adhesive layer composition c-1)

於由環氧樹脂「1002」(三菱化學股份有限公司製、商品名、固形雙酚A型環氧樹脂、環氧當量600)50質量 份、環氧樹脂「806」(三菱化學股份有限公司製、商品名、雙酚F型環氧樹脂、環氧當量160、比重1.20)100質量份、硬化劑「Dyhard(註冊商標)100SF」(Evonik Degussa公司製、商品名、二氰二胺)5質量份、二氧化矽填料「SO-C2」(Admafine(股)製商品名、平均粒徑0.5μm)150質量份、及二氧化矽填料「Aerosil R972」(日本Aerosil股份有限公司製、商品名、一次粒徑之平均粒徑0.016μm)5質量份所成的組成物中添加MEK，攪拌混合，成為均勻組成物。 50% by epoxy resin "1002" (Mitsubishi Chemical Co., Ltd., trade name, solid bisphenol A epoxy resin, epoxy equivalent 600) And epoxy resin "806" (manufactured by Mitsubishi Chemical Corporation, trade name, bisphenol F epoxy resin, epoxy equivalent 160, specific gravity 1.20) 100 parts by mass, and hardener "Dyhard (registered trademark) 100SF" ( 5 parts by mass of Evonik Degussa Co., Ltd., trade name, dicyandiamide), cerium oxide filler "SO-C2" (trade name of Admafine, average particle diameter: 0.5 μm), 150 parts by mass, and cerium oxide filler MEK was added to the composition of 5 parts by mass of "Aerosil R972" (manufactured by Nippon Aerosil Co., Ltd., trade name, average particle diameter of primary particle diameter: 0.016 μm), and the mixture was stirred and mixed to obtain a uniform composition.

於其中添加苯氧樹脂「PKHH」(INCHEM製、商品名、質量平均分子量52,000、玻璃轉移溫度92℃)100質量份、作為偶合劑之「KBM-802」(信越聚矽氧股份有限公司製、商品名、巰基丙基三甲氧基矽烷)0.4質量份、以及作為硬化促進劑之「Curezol 2PHZ-PW」(四國化成工業股份有限公司製、商品名、2-苯基-4,5-二羥基甲基咪唑、分解溫度230℃)0.5質量份，攪拌混合至成為均勻。進一步將其以100網目之濾器過濾，並真空脫泡，藉以得到接著劑層組成物c-1之塗漆。 100 parts by mass of a phenoxy resin "PKHH" (manufactured by INCHEM, trade name, mass average molecular weight: 52,000, glass transition temperature: 92 ° C), and "KBM-802" as a coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., "Curezol 2PHZ-PW" (trade name, 2-phenyl-4,5-two, manufactured by Shikoku Chemicals Co., Ltd.), which is a product of the product name, mercaptopropyltrimethoxydecane, 0.4 parts by mass, and a hardening accelerator. Hydroxymethylimidazole, decomposition temperature 230 ° C) 0.5 parts by mass, stirred and mixed until homogeneous. Further, it was filtered with a 100 mesh filter and vacuum defoamed to obtain a paint of the adhesive layer composition c-1.

<接著劑層(1)> <Binder layer (1)>

於經脫模處理之聚對苯二甲酸乙二酯薄膜所成的分隔件上，將接著劑層組成物c-1，以乾燥後之厚度成為5μm的方式進行塗覆，於110℃乾燥5分鐘，製作於分隔件上形成有接著劑層(1)之接著薄膜。 On the separator formed of the release-treated polyethylene terephthalate film, the adhesive layer composition c-1 was applied so as to have a thickness of 5 μm after drying, and dried at 110 ° C. In a minute, a film of the adhesive layer (1) was formed on the separator.

(3)金屬層 (3) Metal layer

作為金屬層，係準備以下者。 As the metal layer, the following are prepared.

<金屬層(1)> <metal layer (1)>

TQ-M4-VSP(商品名、三井金屬礦業股份有限公司製、厚度12μm、表面粗度Rz0.6μm) TQ-M4-VSP (trade name, manufactured by Mitsui Mining Co., Ltd., thickness 12μm, surface roughness Rz0.6μm)

<金屬層(2)> <metal layer (2)>

F0-WS(商品名、古河電氣工業股份有限公司製、銅箔、厚度12μm、表面粗度Rz1.3μm) F0-WS (trade name, manufactured by Furukawa Electric Co., Ltd., copper foil, thickness 12μm, surface roughness Rz1.3μm)

<金屬層(3)> <metal layer (3)>

GTS-MP(商品名、古河電氣工業股份有限公司製、銅箔、厚度35μm、表面粗度Rz11.0μm) GTS-MP (trade name, manufactured by Furukawa Electric Co., Ltd., copper foil, thickness 35 μm, surface roughness Rz11.0 μm)

(4)基材膠帶之製作 (4) Fabrication of substrate tape

作為樹脂薄膜，係製作以下者。 As the resin film, the following were produced.

(樹脂薄膜d-1) (Resin film d-1)

將使苯乙烯-氫化異戊二烯-苯乙烯嵌段共聚物(SEPS)(Kuraray股份有限公司製、商品名「Septon KF-2104」)與均聚丙烯(PP)(宇部興產股份有限公司製、商品名「J-105G」)以40：60所示摻合比混合而得的樹脂珠於200℃熔融，使用擠出機成形為厚度90μm之長形薄膜狀，藉以製作樹脂薄膜d-1。 Styrene-hydrogenated isoprene-styrene block copolymer (SEPS) (Kuraray Co., Ltd., trade name "Septon KF-2104") and homopolypropylene (PP) (Ube Hiroshi Co., Ltd.) The resin beads obtained by mixing at a mixing ratio of 40:60 were melted at 200 ° C, and formed into an elongated film having a thickness of 90 μm by an extruder to prepare a resin film d- 1.

(樹脂薄膜d-2) (Resin film d-2)

將聚對苯二甲酸乙二酯(PET)(東洋紡股份有限公司製、商品名「Cosmoshine(註冊商標)A4100」)之樹脂珠於260℃熔融，使用擠出機成形為厚度50μm之長形薄膜狀，藉以製作樹脂薄膜d-2。 The resin beads of polyethylene terephthalate (PET) (trade name "Cosmoshine (registered trademark) A4100" manufactured by Toyobo Co., Ltd.) were melted at 260 ° C, and formed into an elongated film having a thickness of 50 μm using an extruder. In the form of a resin film d-2.

(基材膠帶用黏著劑層組成物e-1) (Adhesive layer composition e-1 for base tape)

作為具有官能基之丙烯酸系共聚物(A3)，係配製由丙烯酸2-乙基己酯、丙烯酸2-羥基乙酯及甲基丙烯酸所成，且丙烯酸2-乙基己酯之比率為70莫耳%、質量平均分子量50萬、玻璃轉移溫度-50℃、羥基價30gKOH/g、酸價5mgKOH/g之丙烯酸系共聚物(a3)。 The acrylic copolymer (A3) having a functional group is prepared by 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, and the ratio of 2-ethylhexyl acrylate is 70 mol. An acrylic copolymer (a3) having an ear%, a mass average molecular weight of 500,000, a glass transition temperature of -50 ° C, a hydroxyl value of 30 gKOH/g, and an acid value of 5 mgKOH/g.

相對於丙烯酸系共聚物(a3)100質量份而言，添加聚異氰酸酯系化合物(商品名「CORONATE L」、東曹股份有限公司製)8質量份，溶解於乙酸乙酯，攪拌而得到基材膠帶用黏著劑層組成物e-1。 8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Tosoh Corporation) was added to 100 parts by mass of the acrylic copolymer (a3), dissolved in ethyl acetate, and stirred to obtain a substrate. The adhesive layer composition e-1 for the adhesive tape.

(基材膠帶用黏著劑層組成物e-2) (Adhesive layer composition e-2 for base tape)

作為具有官能基之丙烯酸系共聚物(A4)，係配製由丙烯酸月桂酯、丙烯酸2-羥基乙酯及甲基丙烯酸所成，且丙烯酸月桂酯之比率為80莫耳%、質量平均分子量50萬、玻璃轉移溫度10℃、羥基價40gKOH/g、酸價5mgKOH/g之丙烯酸系共聚物(a4)。 The acrylic copolymer (A4) having a functional group is prepared from lauryl acrylate, 2-hydroxyethyl acrylate, and methacrylic acid, and the ratio of lauryl acrylate is 80 mol%, and the mass average molecular weight is 500,000. An acrylic copolymer (a4) having a glass transition temperature of 10 ° C, a hydroxyl group value of 40 gKOH/g, and an acid value of 5 mgKOH/g.

相對於丙烯酸系共聚物(a4)100質量份而言，添加 聚異氰酸酯系化合物(商品名「CORONATE L」、東曹股份有限公司製)10質量份，溶解於乙酸乙酯，攪拌而得到基材膠帶用黏著劑層組成物e-2。 Addition to 100 parts by mass of the acrylic copolymer (a4) 10 parts by mass of a polyisocyanate-based compound (trade name "CORONATE L", manufactured by Tosoh Corporation) was dissolved in ethyl acetate and stirred to obtain an adhesive layer composition e-2 for a base tape.

<基材膠帶(1)> <Substrate tape (1)>

將所配製之基材膠帶用黏著劑層組成物e-1，於經脫模處理之聚對苯二甲酸乙二酯薄膜所成的剝離襯墊上，以乾燥後之厚度成為10μm的方式進行塗覆，於110℃乾燥3分鐘後，與上述樹脂薄膜d-1貼合，製作於樹脂薄膜上形成有基材膠帶用黏著劑層之基材膠帶(1)。 The prepared substrate tape adhesive layer composition e-1 was applied to a release liner made of a release-treated polyethylene terephthalate film to a thickness of 10 μm after drying. After the coating was dried at 110 ° C for 3 minutes, the resin film d-1 was bonded to the resin film d-1 to form a base tape (1) on which a pressure-sensitive adhesive layer for a base tape was formed.

<基材膠帶(2)> <Substrate tape (2)>

將所配製之基材膠帶用黏著劑層組成物e-2，於經脫模處理之聚對苯二甲酸乙二酯薄膜所成的剝離襯墊上，以乾燥後之厚度成為10μm的方式進行塗覆，於110℃乾燥3分鐘後，與上述樹脂薄膜d-1貼合，製作於樹脂薄膜上形成有基材膠帶用黏著劑層之基材膠帶(2)。 The prepared substrate tape adhesive layer composition e-2 was applied to a release liner made of a release-treated polyethylene terephthalate film to a thickness of 10 μm after drying. After the coating was dried at 110 ° C for 3 minutes, the resin film d-1 was bonded to the resin film to form a base tape (2) on which a pressure-sensitive adhesive layer for a base tape was formed.

<基材膠帶(3)> <Substrate tape (3)>

將所配製之基材膠帶用黏著劑層組成物e-2，於經脫模處理之聚對苯二甲酸乙二酯薄膜所成的剝離襯墊上，以乾燥後之厚度成為10μm的方式進行塗覆，於110℃乾燥3分鐘後，與上述樹脂薄膜d-2貼合，製作於樹脂薄膜上形成有基材膠帶用黏著劑層之基材膠帶(3)。 The prepared substrate tape adhesive layer composition e-2 was applied to a release liner made of a release-treated polyethylene terephthalate film to a thickness of 10 μm after drying. After the coating was dried at 110 ° C for 3 minutes, the resin film d-2 was bonded to the resin film d-2 to form a base tape (3) on which a pressure-sensitive adhesive layer for a base tape was formed.

(5)電子裝置封裝用膠帶之製作 (5) Fabrication of tape for electronic device packaging

<實施例1> <Example 1>

將如以上方式所得之金屬層(1)與附有分隔件之接著劑層(1)的接著劑層(1)側，以貼合角度120°、壓力0.2MPa、速度10mm/s之條件貼合後，將基材膠帶(1)以貼合角度120°、壓力0.2MPa、速度10mm/s之條件貼合於金屬層上(貼合步驟)。接著，將分隔件自接著劑層剝離，使用壓切刀，將接著劑層及金屬層以自接著劑層之表面起到達基材膠帶的方式預切為直徑320mm之圓形形狀，將周邊之不要部分自基材膠帶剝離而去除(1次預切步驟)。 The metal layer (1) obtained in the above manner and the adhesive layer (1) side of the adhesive layer (1) with a separator are attached at a bonding angle of 120°, a pressure of 0.2 MPa, and a speed of 10 mm/s. After that, the base tape (1) was bonded to the metal layer at a bonding angle of 120°, a pressure of 0.2 MPa, and a speed of 10 mm/s (bonding step). Next, the separator is peeled off from the adhesive layer, and the adhesive layer and the metal layer are pre-cut into a circular shape having a diameter of 320 mm from the surface of the adhesive layer to the substrate tape using a press cutter, and the periphery is Do not remove part of the tape from the substrate (1 pre-cut step).

之後，將黏著膠帶(1)以黏著劑層側之面進行接觸的方式疊合於設置於基材膠帶上之金屬層及接著劑層的接著劑層側之面(黏著膠帶疊合步驟)。接著，將黏著膠帶(1)以與金屬層及接著劑層成為同心圓狀的方式預切為直徑370mm之圓形形狀，將周邊之不要部分自基材膠帶剝離而去除(2次預切步驟)，捲繞100枚之金屬層、接著劑層及黏著膠帶的層合體，製作如圖1、2所示的實施例1之電子裝置封裝用膠帶之輥體。 Thereafter, the adhesive tape (1) is laminated on the surface of the adhesive layer side so as to be in contact with the metal layer provided on the substrate tape and the adhesive layer side of the adhesive layer (adhesive tape lamination step). Next, the adhesive tape (1) is pre-cut into a circular shape having a diameter of 370 mm so as to be concentric with the metal layer and the adhesive layer, and the unnecessary portion is removed from the substrate tape to be removed (2 pre-cut steps) The roll of 100 pieces of the metal layer, the adhesive layer, and the adhesive tape was wound, and the roll body of the tape for electronic device package of Example 1 shown in FIG.

<實施例2~17、比較例1~10> <Examples 2 to 17 and Comparative Examples 1 to 10>

除了使黏著膠帶、接著劑層組成物、金屬層、基材膠帶之組合成為如表1、2記載之組合外，係藉由與實施例 1相同之手法，製作實施例2~17、比較例1~10之電子裝置封裝用膠帶之輥體。 In addition to the combination of the adhesive tape, the adhesive layer composition, the metal layer, and the substrate tape, as shown in Tables 1 and 2, In the same manner, the roll bodies of the tapes for electronic device packaging of Examples 2 to 17 and Comparative Examples 1 to 10 were produced.

對於實施例1~17及比較例1~10之電子裝置封裝用膠帶進行以下之測定及評估。其結果示於表1、2。 The following measurements and evaluations were performed on the tapes for electronic device packaging of Examples 1 to 17 and Comparative Examples 1 to 10. The results are shown in Tables 1 and 2.

黏著力係根據JIS Z0237，由如下順序測定。 The adhesion was measured in the following order according to JIS Z0237.

(基材膠帶與金屬層之黏著力P1) (Adhesive force of the substrate tape and the metal layer P1)

由各實施例及比較例之基材薄片採取3點寬25mm×長300mm之試驗片，將該等貼附於各實施例及比較例之金屬層、接著劑層、及黏著膠帶的層合體之金屬層表面後，將2kg橡膠輥以3次來回來進行壓接，放置1小時，作為樣品。測定值係使用於其容量之15~85%範圍內之符合JIS B 7721的拉伸試驗機來測定黏著力。測定係使用180°撕裂法進行，此時之拉伸速度設為300mm/min。測定溫度為23℃、測定濕度為50%。3點之平均值示於表1、2。 A test piece having a width of 25 mm and a length of 300 mm was taken from the base sheet of each of the examples and the comparative examples, and these were attached to the laminate of the metal layer, the adhesive layer, and the adhesive tape of each of the examples and the comparative examples. After the surface of the metal layer, 2 kg of the rubber roller was returned three times and pressure-bonded, and left for 1 hour as a sample. The measured value was measured using a tensile tester in accordance with JIS B 7721 in the range of 15 to 85% of its capacity. The measurement was carried out using a 180° tearing method, at which time the stretching speed was set to 300 mm/min. The measurement temperature was 23 ° C and the measured humidity was 50%. The average of the three points is shown in Tables 1 and 2.

(基材膠帶與黏著膠帶之黏著力P2) (Adhesive force of substrate tape and adhesive tape P2)

由各實施例及比較例之基材薄片採取3點寬25mm×長300mm之試驗片，將該等貼附於各實施例及比較例之黏著膠帶的黏著劑層表面後，將2kg橡膠輥以3次來回來進行壓接，放置1小時，作為樣品。測定值係使用於其容 量之15~85%範圍內之符合JIS B 7721的拉伸試驗機來測定黏著力。測定係以180°撕裂法進行，此時之拉伸速度設為300mm/min。測定溫度為23℃、測定濕度為50%。3點之平均值示於表1、2。 A test piece having a width of 25 mm and a length of 300 mm was taken from the base sheet of each of the examples and the comparative examples, and the surface was attached to the surface of the adhesive layer of the adhesive tape of each of the examples and the comparative examples, and then a 2 kg rubber roller was used. Three times came back for crimping and left for 1 hour as a sample. The measured value is used in its capacity The adhesion test was performed in accordance with JIS B 7721 tensile tester in the range of 15 to 85%. The measurement was carried out by a 180° tearing method, and the stretching speed was set to 300 mm/min. The measurement temperature was 23 ° C and the measured humidity was 50%. The average of the three points is shown in Tables 1 and 2.

(預切加工性) (precut processing)

於各實施例及比較例之電子裝置封裝用膠帶之製作過程中，以目視觀察金屬層之對基材膠帶的層合狀態。將金屬層並無由基材膠帶全面剝離或部分剝離而捲起，可於基材膠帶上特定位置形成圓形之金屬層、接著劑層、及黏著膠帶的層合體者作為優良品，評估為◎，將部分剝離之最大寬度未達0.5mm者作為良品，評估為○，將0.5mm以上且未達1mm者作為容許品，評估為△，將1mm以上者作為不良品，評估為×。又，將金屬層及接著劑層衝壓為圓形形狀後，將周邊之不要部分自基材膠帶剝離時，及/或將黏著膠帶衝壓為圓形形狀後，將周邊之不要部分自基材膠帶剝離時，無法以預切裝置自動剝離者，亦作為不良品，評估為×。 In the production process of the tape for electronic device packaging of each of the examples and the comparative examples, the lamination state of the metal tape to the substrate tape was visually observed. The metal layer is not completely peeled off or partially peeled off from the substrate tape, and a laminate of a circular metal layer, an adhesive layer, and an adhesive tape can be formed at a specific position on the substrate tape as an excellent product. ◎ When the maximum width of partial peeling was less than 0.5 mm, it was evaluated as ○, and when it was 0.5 mm or more and less than 1 mm, it was evaluated as Δ, and when it was 1 mm or more, it was evaluated as ×. Further, after the metal layer and the adhesive layer are punched into a circular shape, when the peripheral portion is not peeled off from the base tape, and/or the adhesive tape is punched into a circular shape, the peripheral portion is not partially taped from the substrate. When peeling, it is not possible to peel off automatically by the pre-cutting device, and it is also evaluated as × as a defective product.

(環狀框架貼合性) (loop frame fit)

對於良好地形成金屬層、接著劑層、及黏著膠帶之層合體的實施例及比較例之電子裝置封裝用膠帶，使用貼合裝置(Disco股份有限公司製：DFM2700)，將50枚層合體自基材膠帶剝離，試行對環狀框架之貼合。將50枚層 合體全部無出現皺褶，可貼合於環狀框架者，作為優良品，評估為◎，將雖產生若干皺褶，但於之後之切割製程及晶粒接合(die bonding)製程中，起因於皺褶之不良率為全體的未達5%者作為良品，評估為○，於切割製程及晶粒接合製程中，起因於皺褶之不良率為5%以上且未達10%者作為容許品，評估為△，於切割製程及晶粒接合製程中，起因於皺褶之不良率為10%以上者作為不良品，評估為×。 For the electronic device encapsulating tape of the examples of the metal layer, the adhesive layer, and the adhesive tape, and the adhesive tape for electronic device packaging of the comparative example, the bonding apparatus (Disco 2700 by Disco Co., Ltd.) was used, and 50 laminated bodies were self-assembled. The substrate tape was peeled off, and the bonding to the annular frame was tried. 50 layers All the joints have no wrinkles and can be attached to the annular frame. As a good product, it is evaluated as ◎, although some wrinkles will be generated, but in the subsequent cutting process and die bonding process, it is caused by The defect rate of wrinkles is less than 5% of the total, and it is evaluated as ○. In the cutting process and the die bonding process, the defect rate due to wrinkles is 5% or more and less than 10% is acceptable. The evaluation was Δ. In the cutting process and the die bonding process, the defect rate due to wrinkles was 10% or more, and it was evaluated as ×.

如表1所示，實施例1~17之電子裝置封裝用膠帶，基材膠帶與金屬層之黏著力P1為0.01~0.3N/25mm，其係請求項規定之0.01~0.5N/25mm，基材膠帶與黏著膠帶之黏著力P2為請求項規定之0.01~0.5N/25mm，且基材膠帶與金屬層之黏著力P1與基材膠帶與黏著膠帶之黏著力P2的比P1/P2為0.1~8，其係請求項規定之0.1~10，因此預切加工性、環狀框架貼合性均為良好之結果。 As shown in Table 1, the adhesive tape for the electronic device package of Examples 1 to 17, the adhesion force P1 of the substrate tape and the metal layer is 0.01 to 0.3 N/25 mm, which is 0.01 to 0.5 N/25 mm as specified in the request. The adhesive force P2 of the adhesive tape and the adhesive tape is 0.01~0.5N/25mm as specified in the request, and the ratio P1/P2 of the adhesive force P1 of the substrate tape to the metal layer and the adhesive force P2 of the substrate tape and the adhesive tape is 0.1. ~8, which is 0.1 to 10 in the request, so the pre-cut workability and the loop frame fit are good results.

相對於此，如表2所示，比較例1之電子裝置封裝用膠帶，基材膠帶與金屬層之黏著力P1為超過0.5N/25mm，基材膠帶與黏著膠帶之黏著力P2為超過0.5N/25mm，因此將金屬層及接著劑層衝壓為圓形形狀後，以及將黏著膠帶衝壓為圓形形狀後，難以將周邊之不要部分自基材膠帶剝離，為預切加工性不良的結果。又，貼合於環狀框架時，於基材膠帶之剝離方向施加過強的力，於金屬層及接著劑層之層合體產生皺褶，環狀框架貼合性亦為不良的結果。 On the other hand, as shown in Table 2, in the tape for electronic device packaging of Comparative Example 1, the adhesion force P1 of the substrate tape and the metal layer was more than 0.5 N/25 mm, and the adhesive force P2 of the substrate tape and the adhesive tape was more than 0.5. N/25mm, after the metal layer and the adhesive layer are punched into a circular shape, and the adhesive tape is punched into a circular shape, it is difficult to peel off the peripheral portion from the base tape, resulting in poor pre-cut workability. . Further, when bonded to the annular frame, an excessive force was applied to the peeling direction of the base tape, and wrinkles were formed in the laminate of the metal layer and the adhesive layer, and the annular frame adhesion was also poor.

比較例2、3之電子裝置封裝用膠帶，基材膠帶與黏著膠帶之黏著力P2為超過0.5N/25mm，因此將黏著膠帶衝壓為圓形形狀後，難以將周邊之不要部分自基材膠帶剝離，為預切加工性不良的結果。且環狀框架貼合性亦為不良的結果。 In the tapes for electronic device packaging of Comparative Examples 2 and 3, the adhesive force P2 of the substrate tape and the adhesive tape is more than 0.5 N/25 mm. Therefore, after the adhesive tape is punched into a circular shape, it is difficult to partially remove the peripheral tape from the substrate. Peeling is a result of poor pre-cut workability. And the annular frame fit is also a bad result.

比較例4之電子裝置封裝用膠帶，基材膠帶與金屬層之黏著力P1為未達0.01N/25mm，因此於預切加 工時產生金屬層之剝離，為預切加工性不良的結果，基材膠帶與金屬層之黏著力P1及基材膠帶與黏著膠帶之黏著力P2的比P1/P2未達0.1，因此環狀框架貼合性亦為不良的結果。 In the tape for electronic device packaging of Comparative Example 4, the adhesion force P1 between the substrate tape and the metal layer is less than 0.01 N/25 mm, so the pre-cutting is performed. The peeling of the metal layer occurs during the working, and the ratio of the adhesion force P1 between the substrate tape and the metal layer and the adhesion force P2 between the substrate tape and the adhesive tape is less than 0.1 as a result of poor pre-cut workability, and thus the ring shape is Frame fit is also a bad result.

比較例5、7之電子裝置封裝用膠帶，基材膠帶與金屬層之黏著力P1為超過0.5N/25mm，因此為預切加工性不良的結果。 In the tapes for electronic device packaging of Comparative Examples 5 and 7, the adhesion force P1 between the substrate tape and the metal layer was more than 0.5 N/25 mm, which was a result of poor precut workability.

比較例6之電子裝置封裝用膠帶，基材膠帶與金屬層之黏著力P1為未達0.01N/25mm，因此為預切加工性不良的結果。 In the tape for electronic device packaging of Comparative Example 6, the adhesion force P1 between the substrate tape and the metal layer was less than 0.01 N/25 mm, which was a result of poor precut workability.

比較例9之電子裝置封裝用膠帶，基材膠帶與黏著膠帶之黏著力P2為未達0.01N/25mm，因此空氣進入黏著膠帶與基材膠帶之間，於環狀框架貼合時，因基材膠帶之剝離，變得無法控制對電子裝置封裝用膠帶所施加的張力，產生皺褶，成為環狀框架貼合性不良的結果。 In the tape for electronic device packaging of Comparative Example 9, the adhesive force P2 of the substrate tape and the adhesive tape is less than 0.01 N/25 mm, so that air enters between the adhesive tape and the substrate tape, and when the annular frame is attached, The peeling of the material tape makes it impossible to control the tension applied to the tape for electronic device packaging, and wrinkles occur, resulting in poor adhesion of the annular frame.

比較例8之電子裝置封裝用膠帶，基材膠帶與黏著膠帶之黏著力P2為未達0.01N/25mm，基材膠帶與金屬層之黏著力P1及基材膠帶與黏著膠帶之黏著力P2的比P1/P2為超過10，因此為環狀框架貼合性不良的結果。 In the tape for electronic device packaging of Comparative Example 8, the adhesion force P2 of the substrate tape and the adhesive tape is less than 0.01 N/25 mm, the adhesion force between the substrate tape and the metal layer P1, and the adhesion force between the substrate tape and the adhesive tape P2. Since the ratio P1/P2 is more than 10, it is a result of poor adhesion of the ring frame.

比較例10之電子裝置封裝用膠帶，基材膠帶與金屬層之黏著力P1為未達0.01N/25mm，因此為預切加工性不良的結果。又，基材膠帶與黏著膠帶之黏著力P2為未達0.01N/25mm，因此為環狀框架貼合性不良的結果。 In the tape for electronic device packaging of Comparative Example 10, the adhesion force P1 between the substrate tape and the metal layer was less than 0.01 N/25 mm, which was a result of poor precut workability. Further, since the adhesive force P2 of the base tape and the adhesive tape was less than 0.01 N/25 mm, the adhesiveness of the annular frame was poor.

1‧‧‧電子裝置封裝用膠帶 1‧‧‧Electronic device packaging tape

2‧‧‧基材膠帶 2‧‧‧Substrate tape

3‧‧‧金屬層 3‧‧‧metal layer

4‧‧‧接著劑層 4‧‧‧ adhesive layer

5‧‧‧黏著膠帶 5‧‧‧Adhesive tape

5a‧‧‧標籤部 5a‧‧‧Label

5b‧‧‧周邊部 5b‧‧‧ peripherals

Claims (6)

一種電子裝置封裝用膠帶，其特徵為具有：具有黏著面之基材膠帶、設置於前述基材膠帶之前述黏著面上，且具有特定平面形狀之金屬層、於前述金屬層之與前述基材膠帶側相反側與前述金屬層層合而設置，且具有特定平面形狀之接著劑層、與具有基材薄膜與黏著劑層之黏著膠帶，且前述黏著膠帶，具有被覆前述接著劑層，且以於前述接著劑層之周圍接觸於前述基材膠帶的方式設置之特定平面形狀的標籤部，前述基材膠帶與前述金屬層之黏著力P1為0.01~0.5N/25mm，前述基材膠帶與前述黏著膠帶之黏著力P2為0.01~0.5N/25mm，前述基材膠帶與前述金屬層之黏著力P1及前述基材膠帶與前述黏著膠帶之黏著力P2的比P1/P2，為0.1~10。 An adhesive tape for electronic device packaging, comprising: a base tape having an adhesive surface; a metal layer provided on the adhesive surface of the base tape; and having a specific planar shape, the metal layer and the substrate An adhesive layer having a specific planar shape and an adhesive tape having a base film and an adhesive layer, and the adhesive tape having the adhesive layer covering the adhesive layer a label portion having a specific planar shape provided in contact with the substrate tape around the adhesive layer, wherein an adhesive force P1 between the substrate tape and the metal layer is 0.01 to 0.5 N/25 mm, and the substrate tape and the aforementioned The adhesive force P2 of the adhesive tape is 0.01 to 0.5 N/25 mm, and the ratio P1/P2 of the adhesion force P1 between the substrate tape and the metal layer and the adhesion force P2 between the substrate tape and the adhesive tape is 0.1 to 10. 如請求項1之電子裝置封裝用膠帶，其中前述金屬層含有銅或鋁。 The tape for electronic device packaging of claim 1, wherein the metal layer comprises copper or aluminum. 如請求項1或請求項2之電子裝置封裝用膠帶，其中前述基材膠帶，具有樹脂薄膜與設置於前述樹脂薄膜之單面的基材膠帶用黏著劑層。 The tape for electronic device packaging according to claim 1 or claim 2, wherein the substrate tape has a resin film and an adhesive layer for a base tape provided on one surface of the resin film. 如請求項3之電子裝置封裝用膠帶，其中前述基材膠帶用黏著劑層，含有包含CH2=CHCOOR(式中，R為碳數4~18之烷基)表示之丙烯酸酯、含羥基之單體、 與異氰酸酯化合物所構成的丙烯酸系聚合物。 The tape for electronic device encapsulation of claim 3, wherein the adhesive layer for the base tape comprises an acrylate comprising a CH 2 =CHCOOR (wherein R is an alkyl group having 4 to 18 carbon atoms), and a hydroxyl group-containing An acrylic polymer composed of a monomer and an isocyanate compound. 如請求項1至請求項4中任一項之電子裝置封裝用膠帶，其中前述接著劑層含有(A)環氧樹脂、(B)硬化劑、(C)丙烯酸樹脂或苯氧樹脂、及(D)經表面處理之無機填充材。 The tape for electronic device packaging according to any one of claims 1 to 4, wherein the adhesive layer comprises (A) an epoxy resin, (B) a hardener, (C) an acrylic resin or a phenoxy resin, and D) Surface treated inorganic filler. 如請求項1至請求項5中任一項之電子裝置封裝用膠帶，其中前述黏著劑層，含有包含CH2=CHCOOR(式中，R為碳數4~18之烷基)表示之丙烯酸酯、含羥基之單體、與分子內具有自由基反應性碳-碳雙鍵之異氰酸酯化合物所構成的丙烯酸系聚合物。 The tape for electronic device encapsulation according to any one of claims 1 to 5, wherein the adhesive layer contains an acrylate comprising CH 2 =CHCOOR (wherein R is an alkyl group having 4 to 18 carbon atoms) An acrylic polymer comprising a hydroxyl group-containing monomer and an isocyanate compound having a radical-reactive carbon-carbon double bond in the molecule.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108485542A (en) * 2018-03-23 2018-09-04 山东天汇防水股份有限公司 A kind of punching polythene self-adhering waterproof roll and its preparation, application method

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7153034B2 (en) * 2018-01-24 2022-10-13 リンテック株式会社 Long laminated sheet and its wound body
CN111629892A (en) * 2018-01-24 2020-09-04 琳得科株式会社 Roll of long laminated sheet
JP7071785B2 (en) * 2018-07-06 2022-05-19 株式会社ディスコ Wafer processing method
JP7071784B2 (en) * 2018-07-06 2022-05-19 株式会社ディスコ Wafer processing method
JP2020024968A (en) * 2018-08-06 2020-02-13 株式会社ディスコ Wafer processing method
JP2020024967A (en) * 2018-08-06 2020-02-13 株式会社ディスコ Wafer processing method
JP7191458B2 (en) * 2018-08-06 2022-12-19 株式会社ディスコ Wafer processing method
JP2020043150A (en) * 2018-09-06 2020-03-19 株式会社ディスコ Wafer processing method
JP2020043147A (en) * 2018-09-06 2020-03-19 株式会社ディスコ Wafer processing method
JP7175560B2 (en) * 2018-09-06 2022-11-21 株式会社ディスコ Wafer processing method
JP2020043149A (en) * 2018-09-06 2020-03-19 株式会社ディスコ Wafer processing method
JP2020043111A (en) * 2018-09-06 2020-03-19 株式会社ディスコ Wafer processing method
JP2020043148A (en) * 2018-09-06 2020-03-19 株式会社ディスコ Wafer processing method
JP2020043110A (en) * 2018-09-06 2020-03-19 株式会社ディスコ Wafer processing method
JP2020043146A (en) * 2018-09-06 2020-03-19 株式会社ディスコ Wafer processing method
JP7246825B2 (en) * 2018-12-06 2023-03-28 株式会社ディスコ Wafer processing method
CN109720623B (en) * 2018-12-30 2024-05-14 上海仪电智能电子有限公司 Tire implantation type RFID electronic tag laminating equipment and laminating method thereof

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5319970A (en) 1976-08-10 1978-02-23 Mitsubishi Heavy Ind Ltd Treating method of exhaust gas
JP2001035817A (en) * 1999-07-22 2001-02-09 Toshiba Corp Method of dividing wafer and manufacture of semiconductor device
TWI340446B (en) * 2005-12-30 2011-04-11 Advanced Semiconductor Eng Method and device for preventing warpage of a substrate strip during semiconductor packaging and the substrate strip
JP4954569B2 (en) * 2006-02-16 2012-06-20 日東電工株式会社 Manufacturing method of semiconductor device
JP2007235022A (en) * 2006-03-03 2007-09-13 Mitsui Chemicals Inc Adhesive film
JP5157208B2 (en) * 2006-03-20 2013-03-06 日立化成株式会社 Die bond dicing sheet
CN102942883B (en) * 2006-04-26 2015-08-26 日立化成株式会社 Splicing tape and use its solar module
JP5486831B2 (en) * 2009-03-19 2014-05-07 積水化学工業株式会社 Dicing tape and semiconductor chip manufacturing method
KR101073698B1 (en) * 2009-09-07 2011-10-14 도레이첨단소재 주식회사 Lamination method of adhesive tape and lead frame
JP5487847B2 (en) 2009-09-25 2014-05-14 日本電気株式会社 Electronic device package, manufacturing method thereof, and electronic apparatus
CN102337089B (en) * 2010-07-07 2014-01-29 古河电气工业株式会社 Wafer processing adhesive tape and method for processing semiconductor therewith
JP5066231B2 (en) * 2010-07-28 2012-11-07 日東電工株式会社 Flip chip type semiconductor back film, strip-shaped semiconductor back film manufacturing method, and flip chip type semiconductor device
JP5419226B2 (en) * 2010-07-29 2014-02-19 日東電工株式会社 Flip chip type film for semiconductor back surface and use thereof
JP2012236899A (en) * 2011-05-11 2012-12-06 Hitachi Chemical Co Ltd Method of producing adhesive sheet
WO2014157471A1 (en) * 2013-03-28 2014-10-02 古河電気工業株式会社 Adhesive tape and wafer-processing tape
JP6374199B2 (en) * 2014-03-31 2018-08-15 日東電工株式会社 Die bond film, dicing die bond film and laminated film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108485542A (en) * 2018-03-23 2018-09-04 山东天汇防水股份有限公司 A kind of punching polythene self-adhering waterproof roll and its preparation, application method
CN108485542B (en) * 2018-03-23 2023-12-15 山东天汇防水股份有限公司 Perforated polyethylene self-adhesive waterproof coiled material and preparation and use methods thereof

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