TW201730946A - 晶圓的加工方法 - Google Patents
晶圓的加工方法 Download PDFInfo
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Abstract
本發明的課題是在於提供一種即使在晶圓的表面側有遮蔽雷射光線的遮蔽物,也不會有使犧牲後工程的加工效率的情形,效率佳有效地形成潛盾隧道之晶圓的加工方法。其解決手段,晶圓的加工方法包含:框架支撐工程,其係將該晶圓定位於具有收容晶圓的開口部之框架的該開口部,以黏著膠帶來一體地貼著該晶圓的背面及該框架,而以該框架支撐該晶圓;及潛盾隧道形成工程,其係以夾盤台來保持該晶圓的表面側,對於該晶圓及該黏著膠帶,將具有透過性之波長的雷射光線通過該黏著膠帶來照射至對應於分割預定線之晶圓的背面,沿著該分割預定線來形成由細孔及圍繞該細孔的非晶質所成的潛盾隧道。
Description
本發明是有關將複數的裝置沿著交叉的複數的分割預定線來區劃而形成於表面的晶圓予以照射雷射光線而分割成各個的裝置晶片之晶圓的加工方法的發明。
IC、LSI、LED等的複數的裝置藉由分割預定線來區劃而被形成於表面的晶圓是藉由雷射加工裝置來分割成各個的裝置晶片,被利用於行動電話、個人電腦、照明機器等的電氣機器(例如參照專利文獻1)。
雷射加工裝置是大概由:保持被加工物的夾盤台、及具備對被保持於該夾盤台的被加工物照射雷射光線的集光器之雷射光線照射手段、及使該夾盤台與該雷射光線照射手段相對性地加工進給的加工進給手段所構成,可沿著晶圓的分割預定線來高精度地照射雷射光線而實施分割加工。
並且,雷射加工裝置是分成:如上述專利文獻1所例示般,對被加工物照射具有吸收性之波長的雷射光線而實施燒蝕加工的型式、及對被加工物將具有透過性
之波長的雷射光線的集光點予以定位於被加工物的內部而照射形成改質層的型式(例如參照專利文獻2)。但,任一的型式皆是為了將晶圓完全切斷,而須沿著分割預定線來照射複數次雷射光線,有生產性差的問題。
於是,本案申請人開發提案一種形成由沿著分割預定線來從表面至背面的細孔及圍繞該細孔的非晶質所成所謂的潛盾隧道,使生產效率提升之技術(參照專利文獻3)。
[專利文獻1]日本特開平10-305420號公報
[專利文獻2]日本特許第3408805號公報
[專利文獻3]日本特開2014-221483號公報
若根據上述專利文獻3記載的技術,則可沿著晶圓的分割預定線來形成從表面貫通至背面的潛盾隧道,不須進行複數次的雷射光線的照射,可效率佳地將晶圓分割成各個的裝置。在此,在被形成於晶圓的基板表面側的裝置是與分割預定線鄰接而形成有突起狀的凸塊(電極)。在存在如此的凸塊時,若所欲從該晶圓的表面側將形成潛盾隧道的雷射光線的集光點位置定位於深的位置,
則依雷射光線照射手段的集光透鏡的開口數,該凸塊會成為遮蔽物,遮蔽雷射光線的外周的一部分,發生無法形成所望的潛盾隧道之問題。如此的問題是不僅被形成於裝置的凸塊,連形成有被形成於分割預定線上的測試元素組(test element group;TEG)的情況也會同樣發生。
在此,避開被形成於該晶圓的表面側的凸塊或TEG等來照射雷射光線而形成潛盾隧道時,如上述專利文獻3記載的技術般,可思考將形成有裝置的晶圓的表面側貼著於與環狀的框架設為一體的膠帶側,而從該晶圓的背面側照射雷射光線。此情況是對於以能夠覆蓋用以使晶圓保持於雷射加工裝置之環狀的框架的內側開口部的方式外周部所被安裝的黏著膠帶的表面,貼著形成有晶圓的裝置的表面側,將該晶圓的背面側朝上方設定。但,如此設定晶圓的情況,由於在該雷射加工時形成有裝置的表面側會被貼著於該膠帶側而保持,因此在之後繼續被實行的黏晶工程或打線接合工程時,需要將形成有裝置的側,亦即晶圓的表面側朝上方,需要將各個分割後被拾取的裝置晶片予以一個一個翻過來的工程,在生產性的提升留下課題。
因此,本發明的目的是在將複數的裝置沿著分割預定線來區劃而形成於表面的晶圓予以照射雷射光線而分割成各個的裝置之晶圓的加工方法中,提供一種即使有被形成於晶圓的表面側的凸塊、遮蔽TEG等的雷射光線之遮蔽物,也不會有使後工程的加工效率犠牲的情形,
可效率佳有效地形成潛盾隧道之晶圓的加工方法。
為了解決上述主要的技術課題,若根據本發明,則可提供一種將複數的裝置藉由交叉的複數的分割預定線來區劃而形成於表面的晶圓予以分割成各個的裝置晶片之晶圓的加工方法,其特徵係具備:
框架支撐工程,其係將該晶圓定位於具有收容晶圓的開口部之環狀框架的該開口部,以黏著膠帶來一體地貼著該晶圓的背面及該環狀框架,而經由該黏著膠帶來以該環狀框架支撐該晶圓;及
潛盾隧道形成工程,其係實施該框架支撐工程之後,以夾盤台來吸引保持該晶圓的表面側,對於該晶圓及該黏著膠帶,將具有透過性之波長的雷射光線通過該黏著膠帶來照射至對應於分割預定線之晶圓的背面,沿著該分割預定線來形成由細孔及圍繞該細孔的非晶質所成的潛盾隧道。
較理想是該潛盾隧道形成工程之後,實施擴張該黏著膠帶而將晶圓分離成各個的裝置晶片之裝置分離工程。較理想是在以夾盤台來保持該晶圓之前,在該晶圓的表面側配設保護構件,在該裝置分離工程中,於擴張該黏著膠帶之前剝離該保護構件。
若根據本發明,則即使在被形成於晶圓的表面側的裝置,與分割預定線鄰接而設有突起狀的凸塊(電極),或在分割預定線上形成有TEG等的遮蔽物,也不會有受該等影響的情形,可沿著分割預定線來效率佳地形成潛盾隧道。
又,若根據本發明,則將該晶圓分割成各個的裝置晶片之後是可從形成有裝置的晶圓的表面側拾取各個的裝置晶片,在實行之後的工程時也不須將各個的裝置晶片翻過來等的工程,因此取得不會有使生產效率犠牲的情形可加工晶圓的作用效果。
1‧‧‧雷射加工裝置
2‧‧‧靜止基台
3‧‧‧夾盤台機構
4‧‧‧雷射光線照射單元
5‧‧‧雷射光線照射手段
6‧‧‧攝像手段
10‧‧‧晶圓
11‧‧‧裝置
12‧‧‧潛盾隧道
15‧‧‧保護膠帶
36‧‧‧夾盤台
T‧‧‧黏著膠帶
F‧‧‧框架
LB‧‧‧雷射光線
圖1是雷射加工裝置的全體立體圖。
圖2是用以說明保護膠帶貼著工程、對準工程的說明圖。
圖3是用以說明潛盾隧道形成工程的說明圖。
圖4是用以說明保護膠帶剝離工程、分離工程、拾取工程的說明圖。
以下,參照附圖來詳細說明有關本發明之晶圓的加工方法的適宜的實施形態。
在圖1中顯示用以實施本發明之晶圓的加工
方法的雷射加工裝置1的立體圖,該雷射加工裝置1是具備:靜止基台2;夾盤台機構3,其係於該靜止基台2被配設成可移動於以箭號X所示的X軸方向,保持被加工物;及雷射光線照射單元4,其係被配設於靜止基台2上。夾盤台機構3是具備:一對的導軌31、31,其係於靜止基台2上沿著X軸方向來平行配設;第1滑塊32,其係於該導軌31、31上被配設成可移動於X軸方向;第2滑塊33,其係於該第1滑塊32上被配設成可移動於與X軸方向正交之以箭號Y所示的Y軸方向;罩台35,其係於該第2滑塊33上藉由圓筒構件34來支撐;及作為保持手段的夾盤台36,其係保持被加工物。
此夾盤台36是具備由具有通氣性的多孔性材料所形成的吸附夾盤361,在吸附夾盤361的上面之保持面上藉由作動未圖示的吸引手段來保持被加工物。如此構成的夾盤台36是藉由被配設在圓筒構件34內之未圖示的脈衝馬達來旋轉。另外,在夾盤台36是配設有用以固定支撐被加工物的環狀的框架之夾具362。
上述第1滑塊32是在下面設有與上述一對的導軌31、31嵌合的一對的被引導溝321、321,且在上面
設有沿著Y軸方向來平行形成的一對的導軌322、322。如此構成的第1滑塊32是構成可藉由被引導溝321、321嵌合於一對的導軌31、31來沿著一對的導軌31、31移動於X軸方向。圖示的夾盤台機構3是具備用以使第1滑塊32沿著一對的導軌31、31來移動於X軸方向的X軸方向移動手段37。X軸方向移動手段37是具備被平行配設於上述一對的導軌31與31之間的雄螺桿371、及用以旋轉驅動該雄螺桿371的脈衝馬達372,該雄螺桿371是被傳動連結至脈衝馬達372的輸出軸。另外,雄螺桿371是被螺合於未圖示的雄螺塊中所形成的貫通雌螺孔,該未圖示的雄螺塊是突出至第1滑塊32的中央部下面而設。因此,藉由脈衝馬達372來正轉及逆轉驅動雄螺桿371,第1滑塊32可沿著導軌31、31來移動於X軸方向。
雷射加工裝置1是具備用以檢測出上述夾盤台36的X軸方向位置之未圖示的X軸方向位置檢測手段。該X軸方向位置檢測手段是由:沿著導軌31來配設之未圖示的線性尺度(linear scale)、及被配設於第1滑塊32,與第1滑塊32一起沿著該線性尺度來移動之未圖示的讀取頭所成。此X軸方向位置檢測手段的讀取頭是例如按每1μm來將1脈衝的脈衝訊號傳送至後述的控制手段。然後,後述的控制手段是藉由計算輸入的脈衝訊號來檢測出夾盤台36的X軸方向位置。另外,在使用脈衝馬達372作為上述X軸方向移動手段37的驅動源時,亦可藉由計算對脈衝馬達372輸出驅動訊號之後述的控制手段
的驅動脈衝來檢測出夾盤台36的X軸方向的位置。並且,在使用伺服馬達作為上述X軸方向移動手段37的驅動源時,亦可將檢測出伺服馬達的旋轉數之旋轉編碼器所輸出的脈衝訊號傳送至後述的控制手段,計算控制手段所輸入的脈衝訊號,藉此檢測出夾盤台36的X軸方向位置,在本發明中有關檢測出該X軸方向位置的手段的形式是未被特別地限定。
上述第2滑塊33是在下面設有與被設在上述第1滑塊32的上面的一對的導軌322、322嵌合的一對的被引導溝331、331,藉由將此被引導溝331、331嵌合於一對的導軌322、322,構成可移動於Y軸方向。圖示的夾盤台機構3是具備用以使第2滑塊33沿著被設在第1滑塊32的一對的導軌322、322來移動於Y軸方向之Y軸方向移動手段38。Y軸方向移動手段38是包含被平行配設於上述一對的導軌322、322之間的雄螺桿381、及用以使該雄螺桿381旋轉驅動的脈衝馬達382等的驅動源。該雄螺桿381是一端會旋轉自如地被上述第1滑塊32的上面所固定的軸承塊383支撐,另一端會被傳動連結至上述脈衝馬達382的輸出軸。另外,雄螺桿381是被螺合於突出至第2滑塊33的中央部下面而設之未圖示的雄螺塊中所形成的貫通雌螺孔。因此,藉由脈衝馬達382來正轉及逆轉驅動雄螺桿381,第2滑塊33可沿著導軌322、322來移動於Y軸方向。
雷射加工裝置1是具備用以檢測出上述第2
滑塊33的Y軸方向位置之未圖示的Y軸方向位置檢測手段。該Y軸方向位置檢測手段是與上述的X軸方向位置檢測手段同樣由:沿著導軌322而配設之未圖示的線性尺度、及被配設於第2滑塊33,與第2滑塊33一起沿著該線性尺度來移動之未圖示的讀取頭所成。此Y軸方向位置檢測手段的該讀取頭是例如按每1μm來將1脈衝的脈衝訊號傳送至後述的控制手段。然後,後述的控制手段是藉由計算輸入的脈衝訊號來檢測出第2滑塊33的Y軸方向位置。另外,在使用脈衝馬達382作為上述Y軸方向移動手段38的驅動源時,亦可藉由計算對脈衝馬達382輸出驅動訊號之後述的控制手段的驅動脈衝來檢測出第2滑塊33的Y軸方向的位置。並且,在使用伺服馬達作為上述Y軸方向移動手段38的驅動源時,亦可將檢測出伺服馬達的旋轉數之旋轉編碼器所輸出的脈衝訊號傳送至後述的控制手段,計算控制手段所輸入的脈衝訊號,藉此檢測出第2滑塊33的Y軸方向位置。
上述雷射光線照射單元4是具備:支撐構件41,其係被配置於上述靜止基台2上;外箱42,其係藉由該支撐構件41來支撐,實質上水平地延伸出;雷射光線照射手段5,其係被配設於該外箱42;及攝像手段6,其係被配設於外箱42的前端部,檢測出應雷射加工的加工領域。
此攝像手段6是除了藉由可視光線來攝像的通常的攝
像元件(CCD)以外,還以對被加工物照射紅外線的紅外線照明手段、及捕捉藉由該紅外線照明手段來照射的紅外線之光學系、及輸出對應於藉由該光學系來捕捉的紅外線的電氣訊號之攝像元件(紅外線CCD)等所構成,將攝像後的畫像訊號傳送至後述的控制手段。
上述雷射光線照射手段5是構成包含集光照射至被保持於夾盤台36上的半導體晶圓上之集光器51,具備:未圖示之以所望的重複頻率來照射雷射光線的脈衝雷射振盪器、調整從該脈衝雷射振盪器振盪的脈衝雷射光線的輸出之輸出調整手段(衰減器)、用以將被照射的脈衝雷射光線的光路朝該集光器51變換方向的方向變換反射鏡等。
雷射加工裝置1是具備未圖示的控制手段。控制手段是藉由電腦所構成,具備:按照控制程式來運算處理的中央運算處理器(CPU)、及儲存該控制程式等的唯讀記憶體(ROM)、及儲存運算結果等之可讀寫的隨機存取記憶體(RAM)、以及輸入介面、輸出介面。
以下,說明有關將複數的SAW裝置藉由分割預定線而被區劃形成於表面之例如由鉭酸鋰(LiTaO3)基板所成的晶圓10予以分割成各個的裝置之晶圓的加工方法,作為利用圖1所示的雷射加工裝置1來實行之晶圓的加工方法的實施形態的一例。
首先,如圖2(a)所示般,以能夠覆蓋環狀的框架F的內側開口部之方式,在外周部被黏著於框架F的
背面Fb側的黏著膠帶T的表面側貼著晶圓10的背面側10b。因此,被貼著於黏著膠帶T的表面的晶圓10是以其表面10a側會成為上側的方式被貼著於框架F的表面Fa側(框架支撐工程)。另外,作為該黏著膠帶T的材質,例如可採用軟質PVC(聚氯乙烯)薄膜或PO(聚烯烴)薄膜,但並非限於此,只要是後述具有透過雷射光線的性質者即可。
若實施了上述的框架支撐工程,則以能夠覆蓋晶圓10的表面10a側之方式貼著作為保護構件的保護膠帶15(保護膠帶貼著工程)。另外,該保護膠帶15的貼著,並非一定要在該框架支撐工程之後進行,亦可在將該晶圓10、黏著膠帶T及框架F設為一體之前,預先對於晶圓10的表面側10a貼著,只要使該晶圓10在被保持於該雷射加工裝置的夾盤台之前貼著即可。另外,作為該保護膠帶15的材質,可選擇與上述黏著膠帶同樣的PVC、PO,但亦可採用不透過雷射光線的材質。
若實施了該保護膠帶貼著工程,則如圖2(b)所示般將框架F翻過來,以背面Fb側能夠形成上側的方式,將該晶圓10之貼著保護膠帶15的表面10a側載置於夾盤台(chuck table)36上,使未圖示的吸引手段作動來使吸引保持於吸附夾盤361。一旦該晶圓10被吸引保持於夾盤台36上,則經由框架F來藉由夾具362固定。藉由如此固定,在夾盤台機構3上,由上依黏著膠帶T、晶圓10、保護膠帶15的順序定位(參照圖2(b),圖3(b))。
如上述般吸引保持晶圓10的夾盤台36是如圖2(b)所示般,藉由加工進給機構來定位於攝像手段6的正下面。一旦夾盤台36定位於攝像手段6的正下面,則在此狀態下,以被保持於夾盤台36的晶圓10中所被形成的格子狀的分割預定線能夠對於X軸方向及Y軸方向配設在預定的位置之方式藉由攝像手段6來攝取被保持於夾盤台36的晶圓10,實行圖案匹配等的畫像處理,而進行對準作業(對準工程)。此時,雖形成有晶圓10的分割預定線之基板的表面側10a是位於下側,但由於攝像手段6是如上述般以紅外線照明手段及捕捉紅外線的光學系以及輸出對應於紅外線的電氣訊號之攝像元件(紅外線CCD)等所構成,因此可從晶圓10的背面10b側透過來攝取分割預定線。
藉由實施上述的對準工程,被保持於夾盤台36上的晶圓10是被定位於夾盤台36上的預定的座標位置,該座標位置資訊會被儲存於雷射加工裝置1的上述控制手段的隨機存取記憶體(RAM)。
若實施了上述的對準工程,則將夾盤台36移動至照射雷射光線的雷射光線照射手段5的集光器51所位置的雷射光線照射領域,將預定的分割預定線的一端部定位成為位於集光器51的正下面。然後,以藉由集光器51的集光透鏡而被集光的脈衝雷射光線的集光點P能夠被定位於晶圓10的厚度方向的所望的位置之方式作動未圖示的集光點位置調整手段來將集光器51移動於光軸方
向。另外,本實施形態的脈衝雷射光線的集光點P是如圖3(b)所示般,在晶圓10中被設定於與相對於脈衝雷射光線所射入的背面10b側之相反側的表面10a側鄰接的預定的位置。
一旦如上述般將晶圓10定位於集光點位置,則如圖3(a)、(b)所示般,作動雷射光線照射手段5,從集光器51將脈衝雷射光線LB通過黏著膠帶T來照射,使在被定位於晶圓10內的集光點P與脈衝雷射光線所被射入的側(背面10b側)之間形成細孔121及屏蔽該細孔的非晶質122,而實施形成潛盾隧道的潛盾隧道形成工程。亦即,一面從集光器51對於黏著膠帶T及構成晶圓10的基板照射具有透過性之波長的脈衝雷射光線,一面使夾盤台36以預定的進給速度移動於圖3中以箭號X所示的方向。然後,一旦分割預定線的另一端到達雷射光線照射手段5的集光器51的照射位置,則停止脈衝雷射光線的照射,且停止夾盤台36的移動。
另外,上述雷射加工的加工條件是例如以下般設定。
波長:1030nm
平均輸出:3W
重複頻率:50kHz
脈衝幅:10ps
點徑:φ10μm
折射率/開口數(*):0.05~0.2
加工進給速度:500mm/秒
(*)鉭酸鋰的折射率/構成集光器的透鏡的開口數
藉由實施上述的潛盾隧道形成工程,在晶圓10的內部是如圖3的(b)、(c)所示般,從脈衝雷射光線的集光點P所被定位的表面10a(下面)側到照射面的背面10b(上面),細孔121及被形成於該細孔121的周圍之非晶質122會成長,沿著分割預定線來以預定的間隔(在本實施形態中是10μm的間隔)形成非晶質的潛盾隧道12。此潛盾隧道12是如圖3的(c)所示般由被形成於中心之直徑為φ1μm程度的細孔121及被形成於該細孔121的周圍之直徑為φ10μm的非晶質122所成,在本實施形態中是互相鄰接的非晶質122彼此間會被形成為連接。另外,在上述的潛盾隧道形成工程中所被形成的非晶質的潛盾隧道12是可從晶圓10的表面10a(下面)側形成至照射面的背面10b(上面),因此即使晶圓的厚度厚,也只要照射1次脈衝雷射光線即可,因此生產性極為良好。並且,在潛盾隧道形成工程中碎片不會飛散,因此使裝置的品質降低的問題也被解除
若實施了上述的潛盾隧道形成工程,則解除固定被載置於夾盤台36上的晶圓10之夾具362,從夾盤台機構3取出經由黏著膠帶T來被保持於框架F的晶圓10,如圖4(a)所示般,將框架F翻過來而使保持有晶圓10的側形成上方。此時,雷射加工時是朝下側的框架F的表面Fa側會被保持成為朝上側。然後,將被貼著於晶
圓10的表面10a側的保護膠帶15剝離(保護膠帶剝離工程),送往實施其次的分離工程的分離手段。
說明有關將實施上述的潛盾隧道形成工程的晶圓10分離成各個的裝置之分離工程。將被安裝有貼著晶圓10的黏著膠帶T之環狀的框架F如圖4的(b)所示般載置於構成框架保持手段61的框架保持構件611的載置面611a上,藉由夾具612來固定於框架保持構件611(框架保持工程)。此時,框架保持構件611是被定位於圖4的(b)所示的基準位置。其次,作動作為構成膠帶擴張手段的支撐手段623之複數的汽缸623a,使環狀的框架保持構件611下降至圖4的(c)所示的擴張位置。因此,被固定於框架保持構件611的載置面611a上之環狀的框架F也下降,所以如圖4的(c)所示般,被安裝於環狀的框架F之黏著膠帶T是接觸於擴張鼓621的上端緣而使擴張。此結果,在被貼著於黏著膠帶T的晶圓10是拉伸力會放射狀地作用,因此沿著上述的潛盾隧道12連續被形成而強度被降低的分割預定線來分割成各個的裝置11,且在裝置11間形成有間隔(分離工程)。另外,上述的保護膠帶剝離工程是只要在該分離工程中黏著膠帶T被擴張之前任一時機皆可,例如亦可在晶圓10被保持於上述框架保持構件611之後實施。
其次,如圖4的(c)所示般,作動拾取夾頭63來吸附裝置11,從黏著膠帶T剝離而拾取,搬送至未圖示的黏晶工程。另外,在拾取工程中,如上述般被貼著於
黏著膠帶T的各個裝置11間的間隙會被擴大,因此不會有與鄰接的裝置11接觸的情形,可容易拾取。
本發明是如依據本實施形態所示般包含:將該晶圓定位於具有收容晶圓的開口部之框架的該開口部,以黏著膠帶來一體地貼著該晶圓的背面及該框架,而以該框架來支撐該晶圓,將該晶圓的表面側保持於夾盤台,對於該晶圓及該黏著膠帶,將具有透過性之波長的雷射光線通過該黏著膠帶來定位照射至對應於分割預定線的背面,沿著該分割預定線來形成由細孔及圍繞該細孔的非晶質所成的潛盾隧道之潛盾隧道形成工程。因此,即使在該晶圓的表面側的分割預定線或鄰接的位置有遮蔽雷射光線之類的構件,也不會有任何影響,可實施潛盾隧道形成加工。而且,藉由將在該潛盾隧道形成工程時照射的雷射光線通過保持晶圓的背面側的黏著膠帶來照射,在雷射光線照射後的拾取工程時,可從形成有裝置的晶圓的表面側拾取,在將裝置送至之後的黏晶工程等時,不須另外設置翻過來的工程等,不會有使生產效率降低的情形。
本發明是不限於上述實施形態,可假想各種的變形例。例如,在本實施形態中,舉鉭酸鋰(LiTaO3)基板為例,作為被加工物,但並非限於此,例如可採用SiC基板、Si基板、氮化鎵基板、藍寶石基板。並且,在本實施形態中,是在實施潛盾隧道形成工程之前,在晶圓的表面側貼著保護膠帶來保持於夾盤台,但該保護膠帶不是一定為必要,在晶圓的表面側形成有保護膜之類的情況,是
可予以省略。而且,在本實施形態中,雖是顯示擴張黏著膠帶來分離,實施拾取工程的技術,但並非限於此,例如亦可採用藉由沿著分割預定線來附加外力而分離後,藉由照射紫外線來使黏著膠帶的黏著性喪失,實施拾取工程的手段。
5‧‧‧雷射光線照射手段
10‧‧‧晶圓
10a‧‧‧表面
10b‧‧‧背面側
12‧‧‧潛盾隧道
15‧‧‧保護膠帶
51‧‧‧集光器
121‧‧‧間形成細孔
122‧‧‧非晶質
36‧‧‧夾盤台
F‧‧‧框架
Fb‧‧‧背面
LB‧‧‧雷射光線
P‧‧‧集光點
T‧‧‧黏著膠帶
X‧‧‧箭號
Claims (3)
- 一種晶圓的加工方法,係將複數的裝置藉由交叉的複數的分割預定線來區劃而形成於表面的晶圓予以分割成各個的裝置晶片之晶圓的加工方法,其特徵係具備:框架支撐工程,其係將該晶圓定位於具有收容晶圓的開口部之環狀框架的該開口部,以黏著膠帶來一體地貼著該晶圓的背面及該環狀框架,而經由該黏著膠帶來以該環狀框架支撐該晶圓;及潛盾隧道形成工程,其係實施該框架支撐工程之後,以夾盤台來吸引保持該晶圓的表面側,對於該晶圓及該黏著膠帶,將具有透過性之波長的雷射光線通過該黏著膠帶來照射至對應於分割預定線之晶圓的背面,沿著該分割預定線來形成由細孔及圍繞該細孔的非晶質所成的潛盾隧道。
- 如申請專利範圍第1項之晶圓的加工方法,其中,實施該潛盾隧道形成工程之後,更具備:擴張該黏著膠帶而將晶圓分離成各個的裝置晶片之裝置分離工程。
- 如申請專利範圍第2項之晶圓的加工方法,其中,在實施該晶圓支撐工程之前,更具備:在該晶圓的表面側配設保護構件之保護構件配設工程,在該裝置分離工程中,在擴張該黏著膠帶之前剝離該保護構件。
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