TW201725667A - 半導體裝置及複合片 - Google Patents
半導體裝置及複合片 Download PDFInfo
- Publication number
- TW201725667A TW201725667A TW105132873A TW105132873A TW201725667A TW 201725667 A TW201725667 A TW 201725667A TW 105132873 A TW105132873 A TW 105132873A TW 105132873 A TW105132873 A TW 105132873A TW 201725667 A TW201725667 A TW 201725667A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- protective layer
- semiconductor device
- substrate
- film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
- B32B27/302—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising aromatic vinyl (co)polymers, e.g. styrenic (co)polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
- B32B27/304—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising vinyl halide (co)polymers, e.g. PVC, PVDC, PVF, PVDF
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
- B32B27/306—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising vinyl acetate or vinyl alcohol (co)polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
- B32B27/308—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising acrylic (co)polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
- B32B27/365—Layered products comprising a layer of synthetic resin comprising polyesters comprising polycarbonates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/40—Layered products comprising a layer of synthetic resin comprising polyurethanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
- H01F1/34—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
- H01F1/36—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites in the form of particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/06—Thin magnetic films, e.g. of one-domain structure characterised by the coupling or physical contact with connecting or interacting conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/02—2 layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/24—All layers being polymeric
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/748—Releasability
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
- H01L2225/06537—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Dispersion Chemistry (AREA)
- Dicing (AREA)
- Laminated Bodies (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Materials Engineering (AREA)
Abstract
本發明之一形態之半導體裝置100具備半導體基板11、及保護層20。半導體基板11具有構成電路面之第1面、及與上述第1面為相反側之第2面。保護層20由含有軟磁性粒子之複合材料之單層構成,且具有接著於上述第2面之接著面201。
Description
本發明係關於一種半導體裝置及複合片,該半導體裝置具備貼附於例如半導體晶片等半導體元件的背面之半導體用保護膜。
近年來,廣泛使用被稱為面朝下(face down)方式或倒裝晶片(flip chip)連接之封裝法製造半導體裝置。此種封裝法中,半導體晶片中之構成電路面的表面(主動面)與配線基板對向配置,經由形成於其表面之被稱為凸塊(bump)之複數個電極,半導體晶片係電性、機械性連接於配線基板上。
對於利用面朝下方式封裝之半導體晶片的背面(非主動面),以保護半導體晶片為目的而會在多數情況下貼附保護膜。作為此種保護膜,已知有一種倒裝晶片型半導體背面用膜,其具備接著劑層、及積層於該接著劑層上之保護層,且上述保護層由耐熱性樹脂或金屬構成(例如參照
專利文獻1)。
另一方面,近年來,隨著電子機器之小型化、高功能化,配線基板上的半導體晶片間的電磁串擾(cross talk)之影響變大。為了消除此種問題,業界開發出一種半導體裝置用接著膜,具有接著劑層與電磁波屏蔽層之積層結構(例如參照專利文獻2)。
[先前技術文獻]
[專利文獻]
專利文獻1:日本專利特開2012-33626號公報。
專利文獻2:日本專利特開2012-124466號公報。
近年來,電子機器之薄型化之要求不斷提高,內置之半導體裝置之薄型化不斷推進。然而,如專利文獻1、2所記載般,由於接著於半導體晶片的背面之膜由2層構成,故而半導體裝置之薄型化存在極限。此種問題於下述情形時變得更顯著,即,將上述膜應用於構成例如CoC(Chip on Chip;疊層晶片)或PoP(Package on Package;疊層封裝)之類的堆疊(stack)結構之半導體裝置之各個半導體晶片。
鑒於如以上之情況,本發明之目的在於提供一種半導體裝置及複合片,該半導體裝置具有半導體晶片之保護功能及雜訊(noise)抑制功能,並且可實現薄型化。
為了達成上述目的,本發明之一形態之半導體裝置具備半導體基板、及保護層。
上述半導體基板具有構成電路面之第1面、及與上述第1面為相反側之第2面。
上述保護層由含有軟磁性粒子之複合材料之單層構成,且具有接著於上述第2面之接著面。
上述半導體裝置中,保護層藉由使其接著面接合於半導體基板的背面而與半導體基板一體化。因此,由於保護半導體基板的背面之保護層由單層構成,故而可實現保護層及半導體裝置之厚度變薄。進而,由於保護層由含有軟磁性粒子之複合材料構成,故而可提高半導體基板的抗彎強度,並且可抑制自半導體基板向外部釋出之電磁雜訊或自外部向該半導體基板侵入之電磁雜訊。
典型而言,上述複合材料由分散有上述軟磁性粒子之熱硬化性接著樹脂之硬化物構成。藉此,可容易地構成由如下單層構成之保護層,該單層具有半導體基板之背面保護所必需之強度及電磁雜訊抑制效果。
上述半導體基板可為半導體晶圓,亦可為單片化成晶片尺寸(chip size)之半導體裸晶片(bare chip)。
上述保護層亦可進而含有導熱性粒子。藉此,可獲得如下保護層:除電磁雜訊吸收特性以外,半導體基板之散熱性亦優異。
本發明之另一形態之半導體裝置具備配線基板、半導體元件、及保護層。
上述半導體元件具有構成電路面之第1面、及與上述第1面為相反側之第2面,且搭載於上述配線基板。
上述保護層由含有軟磁性粒子之複合材料之單層構成,且具有接著於上述第2面之接著面。
半導體元件於配線基板上之安裝(mount)方法並無特別限定,可為倒裝晶片連接,亦可為打線接合(wire bond)連接。於倒裝晶片連接之情形時,保護層配置於半導體元件的上表面(與配線基板為相反側之面)。另一方面,於打線接合連接之情形時,保護層作為接著層配置於半導體元件與配線基板之間。
上述半導體裝置亦可進而具備半導體封裝零件,該半導體封裝零件與上述配線基板電性連接。該情形時,上述
半導體元件配置於上述配線基板與上述半導體封裝零件之間。
另外,由於保護層由單層構成,故而即便於半導體裝置具有堆疊結構之情形時,亦可抑制半導體元件與半導體封裝零件之間的電磁串擾,並且可實現半導體裝置之薄型化。
本發明之又一形態之半導體裝置具備第1半導體元件、第2半導體元件、及接著層。
上述第2半導體元件配置於上述第1半導體元件上,且與上述第1半導體元件電性連接。
上述接著層由含有軟磁性粒子之非導電性複合材料構成,配置於上述第1半導體元件與上述第2半導體元件之間。
本發明之一形態之複合片接合於半導體基板中之與構成電路面之第1面為相反側的第2面,且具備保護層、及支持片。
上述保護層由含有軟磁性粒子之複合材料之單層構成,且具有接著於上述第2面之接著面。
上述支持片可剝離地貼附於上述保護層中之與上述接著面為相反側的表面。
上述支持片亦可由切割片構成,該切割片用於在半導
體基板之切割步驟中保護、固定半導體基板,以拾取(pickup)單片化成晶片尺寸之半導體晶片。
上述保護層亦可進而含有導熱性的無機填料。該無機填料使保護層的熱擴散率提高,因此可使半導體基板之發熱有效地擴散。
上述無機填料亦可包含非等向性形狀粒子,該非等向性形狀粒子具有與上述保護層的厚度方向大致相同之長軸方向。上述非等向性形狀粒子在其長軸方向上表現良好的熱擴散率,因此容易使半導體基板所產生之熱經由保護層而散發。
如上所述,根據本發明,可提供一種半導體裝置,其具有半導體晶片之保護功能及雜訊抑制功能,並且可實現薄型化。
10‧‧‧半導體元件
11‧‧‧半導體基板
12、711、712、721‧‧‧配線層
13、32、41、61、62、81、82、83‧‧‧凸塊
20、20A、20B、20C‧‧‧保護層
20D‧‧‧接著層
21‧‧‧第1配線基板
22‧‧‧第2配線基板
31‧‧‧外部連接端子
42‧‧‧接合線
51‧‧‧底部填充樹脂層
52‧‧‧密封層
71、72‧‧‧封裝本體
100、200、300、400‧‧‧半導體裝置
110‧‧‧控制基板
125‧‧‧黏著劑層
140、401、402‧‧‧複合片
140c‧‧‧沖裁槽
160‧‧‧保護構件
201‧‧‧接著面
202‧‧‧表面
C1至C7、C21、C22‧‧‧半導體晶片
D‧‧‧切片機
F、RF‧‧‧環狀框
K‧‧‧筒夾
P11、P12、P21、P22‧‧‧半導體封裝
S1‧‧‧剝離片
S2‧‧‧支持片
T‧‧‧切割片
V1、V2、V3、V5、V6‧‧‧通孔
W‧‧‧半導體晶圓
圖1係表示本發明之第1實施形態之半導體裝置的結構之概略側剖面圖。
圖2係表示上述半導體裝置中包含保護層之複合片之概略側剖面圖。
圖3係說明上述半導體裝置之製造方法之概略步驟
剖面圖。
圖4係表示上述複合片之預切割形狀之概略俯視圖。
圖5係說明上述複合片之貼附步驟之一例之示意圖。
圖6係說明上述複合片之貼附步驟之另一例之示意圖。
圖7係表示本發明之第2實施形態之半導體裝置的結構之概略側剖面圖。
圖8係表示本發明之第3實施形態之半導體裝置的結構之概略側剖面圖。
圖9係表示本發明之第4實施形態之半導體裝置的結構之概略側剖面圖。
以下,一面參照圖式,一面說明本發明之實施形態。
<第1實施形態>
圖1係表示本發明之一實施形態之半導體裝置100的結構之概略側剖面圖。
圖中,X軸、Y軸及Z軸表示相互正交之3軸方向,Z軸方向相當於半導體裝置100的高度方向(厚度方向)。
如圖1所示,本實施形態之半導體裝置100具備半導體元件10、及保護層20。
[半導體裝置]
半導體裝置100由以晶圓級(wafer level)製作之晶片尺寸封裝(Wafer Level Chip Scale Package;WLCSP)構成。半導體元件10具有:半導體基板11;配線層12,形成於構成該半導體基板11的電路面的表面(第1面);及複數個凸塊13,連接於配線層12。
半導體基板11由單晶矽或碳化矽、氮化鎵、砷化鎵等之半導體晶圓、或者將其單片化(切割)成特定尺寸而成之半導體晶片構成。半導體基板11的厚度並無特別限定,例如為25μm至400μm。
配線層12用以將形成於半導體基板10的電路面之複數個電極與複數個凸塊13連接,且具有以上述複數個電極之位置或間距成為特定之位置或間距之方式再排列之配線層。凸塊13由焊料凸塊或金凸塊等突起電極構成。
再者,半導體元件10可僅由半導體基板11(裸晶)構成,亦可省略配線層12(凸塊13直接配置於半導體基板11的各電極)。
[保護層]
保護層20構成設置於半導體基板11的背面(第2面)之半導體用保護膜。保護層20設置於半導體基板11的背
面,藉此構成為發揮如下各種功能:提高半導體基板11的剛性(抗彎強度),保護半導體基板11的背面,顯示半導體基板11的種類,抑制半導體基板11的翹曲,吸收自半導體基板11放射或向半導體基板11侵入之電磁雜訊等。
圖2係表示保護層20之概略側剖面圖。
保護層20連同剝離片S1及支持片S2一起構成複合片140。保護層20具有接著於半導體基板11(半導體元件10)的背面之接著面201,未使用時由剝離片S1可剝離地被覆。與接著面201為相反側之保護層20的表面202由支持片S2支撐。支持片S2在保護層20接著於半導體基板11後被移除。
如圖2所示,保護層20由含有軟磁性粒子之複合材料之單層構成。保護層20的厚度並無特別限定,例如設為20μm以上且400μm以下、較佳為25μm以上且300μm以下之範圍內。
構成保護層20之複合材料由含有軟磁性粒子之電絕緣性之接著樹脂之硬化物構成。
(軟磁性粒子)
作為軟磁性粒子,只要為具有軟磁特性之磁性材料之粉末則並無特別限定,可採用合金系、氧化物系、非晶系(amorphous)等各種磁性材料之粉末。
作為合金系磁性材料,典型而言雖為鐵矽鋁合金(sendust)(Fe-Si-Al合金),但此外亦可列舉鎳鐵合金(permalloy)(Fe-Ni合金)、矽銅(Fe-Cu-Si合金)磁性不銹鋼等。作為氧化物磁性材料,典型而言,可列舉鐵氧體(ferrite)(Fe2O3)。作為非晶系磁性材料,典型而言,可列舉過渡金屬-半金屬系非晶材料,更具體而言,可列舉Fe-Si-B系、Co-Fe-Si-B系等。關於磁性材料之種類,可以電磁波吸收為目的,根據成為對象之電磁波的頻率特性等而適當選擇,其中,就可覆蓋相對較廣頻帶之方面而言,較佳為鐵矽鋁合金等具有高磁導率特性之磁性材料。
軟磁性粒子之粉末形態亦無特別限定,除球狀、針狀以外,亦可使用包含鱗片狀或薄片狀之扁平狀等,其中較佳為扁平狀。尤其更佳為該等扁平狀之磁性粉末以如下方式分散者,即,與保護層20的平面方向平行配向,且在保護層20的厚度方向上多層重疊。
該情形時,軟磁性粒子的平均粒徑可根據其扁平率或平均厚度而任意設定,例如設為100nm以上且100μm以下之範圍。於軟磁性粒子使用奈米鐵氧體(nanoferrite)粒子
之情形時,其粒徑之下限為100nm,較佳為1μm。此處,所謂扁平率係以縱橫比(aspect ratio)之形式算出,該縱橫比係將軟磁性粒子的平均粒徑(平均長度)除以其平均厚度所得。藉由調整軟磁性粒子的平均粒徑、扁平率、平均厚度等,可減小由軟磁性粒子所造成之退磁場(demagnetizing field)之影響,提高軟磁性粒子之磁導率。
再者,本說明書中測定軟磁性粒子的平均粒徑時,將島津製作所之雷射繞射式粒徑分佈測定裝置(SALD-2300)作為測定裝置,使用旋風分離器噴射型乾式測定單元(SALD-DS5),利用乾式法進行測定。
保護層20中的軟磁性粒子的含量例如設為30質量%以上且95質量%以下、較佳為40質量%以上且90質量%以下之範圍。若軟磁性粒子的含量過低,則無法獲得作為保護層20充分之電磁雜訊抑制效果。另外,若軟磁性粒子的含量過高,則無法獲得作為保護層20充分之接著強度、軟磁性粒子之保持強度等。
(樹脂成分)
另一方面,作為接著樹脂之樹脂成分,包含熱硬化性成分及能量線硬化性成分的至少一種與黏合劑聚合物(binder polymer)成分。
作為熱硬化性成分,例如可列舉環氧樹脂、酚樹脂、三聚氰胺樹脂、脲樹脂、聚酯樹脂、胺基甲酸乙酯樹脂(urethane resin)、丙烯酸系樹脂、聚醯亞胺樹脂、苯并(benzooxazine)樹脂等、及該等之混合物。尤其在本實施形態中,較佳地可使用環氧樹脂、酚樹脂以及該等之混合物。
該等之中,在本實施形態中較佳地可使用雙酚系縮水甘油基型環氧樹脂、鄰甲酚酚醛清漆型環氧樹脂及苯酚酚醛清漆型環氧樹脂。該等環氧樹脂可單獨使用1種或組合2種以上使用。
能量線硬化性成分由如下化合物所構成:當受到紫外線、電子束等能量線之照射時,會發生聚合硬化。該化合物於分子內具有至少1個聚合性雙鍵,通常,分子量為100至30000,較佳為300至10000左右。作為此種能量線聚合型化合物,例如可使用三羥甲基丙烷三丙烯酸酯、四羥甲基甲烷四丙烯酸酯、季戊四醇三丙烯酸酯、二季戊四醇單羥基五丙烯酸酯、二季戊四醇六丙烯酸酯或1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、寡酯丙烯酸酯,進而可使用聚酯型或聚醚型之丙烯酸胺基甲酸乙酯低聚物或聚酯丙烯酸酯、聚醚丙烯酸酯、環氧改質丙烯酸酯等。
該等之中,在本實施形態中較佳地可使用紫外線硬化
型樹脂,具體而言,尤佳地可使用寡酯丙烯酸酯、丙烯酸胺基甲酸乙酯低聚物等。藉由在能量線硬化性成分中混入光聚合起始劑,可減少聚合硬化時間及光線照射量。
黏合劑聚合物成分用以對保護層20賦予適度的黏性(tack),以提高造膜性或片材之操作性。黏合劑聚合物的重量平均分子量通常為5萬至200萬,較佳為10萬至150萬,尤佳為20萬至100萬之範圍。若分子量過低,則片材形成不充分,若過高,則片材之柔軟性較差,或與其他成分之相溶性變差,結果妨礙均勻之片材形成。
作為此種黏合劑聚合物,例如可使用丙烯酸系聚合物、聚酯樹脂、胺基甲酸乙酯樹脂、丙烯酸胺基甲酸乙酯樹脂、聚矽氧樹脂、苯氧基樹脂、橡膠系聚合物等,尤佳地可使用丙烯酸系聚合物。
丙烯酸系聚合物的玻璃轉移溫度(Tg)較佳為-60℃至50℃,進而較佳為-50℃至40℃之範圍。若丙烯酸系聚合物的玻璃轉移溫度過低,則有如下情況:保護層20與支持片S2之剝離力變大而引起保護層20向半導體基板11之轉印不良,或者片狀下之保管穩定性較差。另一方面,若丙烯酸系聚合物的玻璃轉移溫度過高,則保護層20之接著性降低,變得無法轉印至半導體基板11,或者轉印後保護層20自半導體基板11剝離。
作為丙烯酸系聚合物,例如可列舉(甲基)丙烯酸酯共聚物,其由(甲基)丙烯酸酯單體及(甲基)丙烯酸衍生物衍生之結構單元所構成。此處,作為(甲基)丙烯酸酯單體,較佳為使用烷基的碳數為1至18之(甲基)丙烯酸烷基酯、例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯等。另外,作為(甲基)丙烯酸衍生物,例如可列舉(甲基)丙烯酸、(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸羥基乙酯等。
使甲基丙烯酸縮水甘油酯等進行共聚合而將縮水甘油基導入至丙烯酸系聚合物,藉此與作為熱硬化型接著成分之環氧樹脂之相溶性提高,且硬化後之Tg變高而耐熱性亦提高。另外,利用丙烯酸羥基乙酯等將羥基導入至丙烯酸系聚合物,藉此容易控制與晶片之密接性或黏著物性。
保護層20亦可在無損本發明的效果之範圍內含有添加劑。添加劑為公知者即可,可根據目的而任意選擇並無特別限定,作為較佳者例如可列舉塑化劑、抗靜電劑、抗氧化劑、著色劑(染料、顏料)、吸氣劑(gettering agent)等。
(無機填料)
保護層20亦可進而含有使保護層20的熱擴散率提高
之導熱性的無機填料。
藉由調配此種無機填料,可使半導體基板11之發熱有效地擴散。另外,可調整硬化後的保護層20的熱膨脹係數,對於半導體基板11而言使硬化後的保護層20的熱膨脹係數最適宜,藉此可提高半導體裝置100之可靠性。進而,可減少硬化後的保護層20的吸濕率,加熱時維持作為保護層20之接著性,從而可提高半導體裝置100之可靠性。再者,所謂熱擴散率係將保護層20的導熱率除以保護層20的比熱與比重之積所得之值,且顯示出熱擴散率越大,則具有越優異的散熱特性。
作為無機填料,具體而言,可列舉二氧化矽、氧化鋅、氧化鎂、氧化鋁、鈦、碳化矽、氮化硼等之粒子、該等經球形化而成之珠粒、單晶纖維及玻璃纖維等。
無機填料較佳為包含非等向性形狀粒子。非等向性形狀粒子在其長軸方向上表現良好的熱擴散率。因此,保護層20中,其長軸方向與保護層20的厚度方向大致相同之非等向性形狀粒子之比例提高,藉此容易使半導體基板11所產生之熱經由保護層20而散發。
再者,所謂「非等向性形狀粒子的長軸方向與保護層20的厚度方向大致相同」,具體而言係指非等向性形狀粒
子的長軸方向相對於保護層20的厚度方向(圖2中為Z軸方向)之斜率處於-45°至45°之範圍。
為了使非等向性形狀粒子的長軸方向與保護層20的厚度方向大致相同,保護層20亦可進而包含干擾粒子。藉由併用非等向性形狀粒子與干擾粒子,可於保護層20之製造步驟中,抑制非等向性形狀粒子的長軸方向與保護層20的寬度方向或流動方向大致相同,提高其長軸方向與保護層20的厚度方向大致相同之非等向性形狀粒子之比例。其結果,可獲得具有優異的熱擴散率之保護層20。
非等向性形狀粒子的具體形狀可列舉板狀、針狀、鱗片狀等。作為較佳的非等向性形狀粒子,可列舉氮化物粒子,作為氮化物粒子,可列舉氮化硼、氮化鋁、氮化矽等之粒子。該等之中,亦較佳為容易獲得良好的導熱性之氮化硼粒子。
非等向性形狀粒子的平均粒徑例如為20μm以下,較佳為5μm至20μm。另外,非等向性形狀粒子的平均粒徑較佳為小於上述干擾粒子的平均粒徑。藉由如上所述般調整非等向性形狀粒子的平均粒徑,保護層20的熱擴散率或製膜性提高,並且保護層20中的非等向性形狀粒子的填充率提高。
另一方面,關於干擾粒子的形狀,只要為妨礙非等向性形狀粒子的長軸方向與保護層20的寬度方向或流動方向(與保護層20平行之方向)大致相同之形狀則並無特別限定,其具體形狀例如為球狀或扁平狀。作為干擾粒子,例如可列舉二氧化矽粒子、氧化鋁粒子。
干擾粒子的平均粒徑例如超過20μm,較佳為超過20μm且為50μm以下,更佳為超過20μm且為30μm以下。藉由將干擾粒子的平均粒徑設為上述範圍,保護層20的熱擴散率或製膜性提高。另外,非等向性形狀粒子每單位體積之比表面積大,容易使形成保護層20之組成物的黏度上升。此處,於添加比表面積大且平均粒徑為20μm以下之非等向性形狀粒子以外之填料之情形時,有如下之虞:形成保護層20之組成物的黏度進一步上升而變得難以形成保護層20,或者必須藉由大量溶劑進行稀釋而生產性降低。
作為干擾粒子,亦可使用上述軟磁性粒子。藉此,除軟磁性粒子及非等向性形狀粒子以外,無需另外添加干擾粒子,因此軟磁性粒子的填充率提高,因此可進一步提高電磁波吸收特性。該情形時,軟磁性粒子不限定於1種,亦可為2種以上。例如,除了以電磁波吸收為主要目的而調整之第1軟磁性粒子以外,保護層20中亦可包含第2軟磁性粒子,該第2軟磁性粒子具有作為干擾粒子最適宜
之平均粒徑。
且說,保護層20亦可被著色。保護層20之著色例如藉由調配顏料、染料等而進行。若將保護層20著色,則可實現外觀之改善,並且於實施雷射印字時可提高其視認性、識別性。保護層20的顏色並無特別限定,可為無彩色,亦可為有彩色。本實施形態中,保護層20著色為黑色。
再者另外,以提高硬化後的保護層20與半導體基板11的背面之接著性、密接性為目的,亦可於保護層20中添加偶合劑。偶合劑可不損及保護層20之耐熱性而提高接著性、密接性,進而耐水性(耐濕熱性)亦提高。
(剝離片)
剝離片S1以被覆保護層20的接著面201之方式設置,使用保護層20時,自接著面201剝離。
作為剝離片S1,例如可使用聚乙烯膜、聚丙烯膜、聚丁烯膜、聚丁二烯膜、聚甲基戊烯膜、聚氯乙烯膜、氯乙烯共聚物膜、聚對苯二甲酸乙二酯膜、聚萘二甲酸乙二酯膜、聚對苯二甲酸丁二酯膜、聚胺基甲酸乙酯膜、乙烯-乙酸乙烯酯膜、離子聚合物樹脂膜、乙烯-(甲基)丙烯酸共聚物膜、乙烯-(甲基)丙烯酸酯共聚物膜、聚苯乙烯膜、
聚碳酸酯膜、聚醯亞胺膜、氟樹脂膜等。另外,亦可使用該等之交聯膜。進而,亦可為該等之積層膜。
作為剝離片S1,較佳為如上所述之膜的一表面實施有剝離處理之膜。作為用於剝離處理之剝離劑雖無特別限定,但可使用聚矽氧系、氟系、醇酸系、不飽和聚酯系、聚烯烴系、蠟系等。尤其是聚矽氧系剝離劑因容易實現低剝離力而較佳。若用於剝離膜之膜為如聚烯烴膜般其本身的表面張力低,且對黏著層表現低剝離力之膜,則亦可不進行剝離處理。
進而,較理想為剝離片S1的表面張力較佳為40mN/m以下,進而較佳為37mN/m以下,尤佳為35mN/m以下。此種表面張力低之剝離片S1可適當選擇材質而獲得,另外,亦可藉由如下方式而獲得:在剝離片S1的表面塗佈聚矽氧樹脂等而實施脫模處理。
剝離片S1的厚度通常為5μm至300μm,較佳為10μm至200μm,尤佳為20μm至150μm左右。
(支持片)
支持片S2可剝離地貼附於與保護層20的接著面201為相反側的表面202,具有作為將保護層20貼附於半導體基板11時的支撐體之作用。
支持片S2由以樹脂系材料為主要材料之基材膜構成。作為基材膜之具體例,可列舉低密度聚乙烯(LDPE)膜、直鏈低密度聚乙烯(LLDPE)膜、高密度聚乙烯(HDPE)膜等聚乙烯膜;聚丙烯膜、聚丁烯膜、聚丁二烯膜、聚甲基戊烯膜、乙烯-降冰片烯共聚物膜、降冰片烯樹脂膜等聚烯烴系膜;乙烯-乙酸乙烯酯共聚物膜、乙烯-(甲基)丙烯酸共聚物膜、乙烯-(甲基)丙烯酸酯共聚物膜等乙烯系共聚物膜;聚氯乙烯膜、氯乙烯共聚物膜等聚氯乙烯系膜;聚對苯二甲酸乙二酯膜、聚對苯二甲酸丁二酯膜等聚酯系膜;聚胺基甲酸乙酯膜;聚醯亞胺膜;聚苯乙烯膜;聚碳酸酯膜;氟樹脂膜等。另外,亦可使用該等之交聯膜、離子聚合物膜之類的改質膜。基底層可為由該等之1種構成之膜,進而亦可為將該等組合2種以上而成之積層膜。
或者,構成支持片S2之基材膜亦可使用上述之構成剝離片S1之樹脂膜。另外,作為支持片S2,亦可使用對上述基材膜實施黏著加工而成之膜。進而,支持片S2亦可在保護層20之硬化後重新貼合於切割片。
支持片S2的厚度並無特別限定,例如設為10μm以上且500μm以下,較佳為15μm以上且300μm以下,尤佳為20μm以上且250μm以下之範圍內。
[半導體裝置之製造方法]
繼而,對半導體裝置100之製造方法進行說明。
圖3中的A至D係說明半導體裝置100之製造方法之概略步驟剖面圖。
首先,如圖3中的A所示,於半導體晶圓W的背面貼附保護層20。再者,保護層20之貼附步驟中,例如亦可使用如下所述之經預切割之複合片140(401、402)(圖4至圖6)。
半導體晶圓W預先藉由背面研磨步驟而薄化成特定厚度(例如50μm)。另外,於半導體基板W的表面(電路面),以晶圓級形成有配線層12及凸塊13。
保護層20例如形成為與半導體晶圓W大致同等之大小、形狀,而為硬化處理前之狀態。在要貼附於半導體晶圓W之前,將剝離片S1自接著面201剝離。另外,保護層20經由接著面201而貼附於半導體晶圓W的背面。然後,將支持片S2自保護層20的表面202剝離,藉此獲得半導體晶圓W與保護層20之積層體。繼而,使保護層20硬化。藉此,於半導體晶圓W的整個表面形成由保護層20之硬化物構成之單一之複合材料層。
於半導體晶圓W貼附硬化前之保護層20,藉此半導體晶圓W的表觀上的厚度增加,其結果,半導體晶圓W之剛性提高,並且操作性或切割適性提高。藉此,可有效地保護半導體晶圓W免受損傷或破裂等。
繼而,於保護層20之硬化物上形成表示製品資訊之印字層。印字層係藉由對保護層20的表面照射紅外線雷射而形成(雷射標記)。印字層包含表示半導體晶片或半導體裝置的種類等之文字、符號或圖形。藉由以晶圓級形成印字層,可將特定的製品資訊高效率地印字於各個晶片區域。
繼而,如圖3中的B所示,將接著有保護層20之半導體晶圓W黏裝於切割片T的黏著面。切割片T用於在半導體基板之切割步驟中保護、固定半導體基板,以拾取單片化成晶片尺寸之半導體晶片。切割片T係使設置於其一面之黏著層朝上而配置於未圖示之切割臺上,並藉由環狀框F進行固定。半導體晶圓W係使其電路面朝上,經由保護層20而固定於切割片T上。
然後,如圖3中的C所示,藉由切片機D將半導體晶圓W每個電路(按晶片單元)地進行切割。此時,切片機D的刀片以到達切割片T的上表面(黏著面)之深度將半導體晶圓W切斷,因此,保護層20連同半導體晶圓W一
起被切斷成晶片單元。
繼而,如圖3中的D所示,藉由筒夾K(collet),將晶片狀之半導體元件10連同保護層20一起自切割片T的黏著層剝離。藉此,可製造於半導體元件10的背面設置有保護層20之半導體裝置100。
圖4係表示複合片140之預切割形狀之概略俯視圖。複合片140典型而言以帶狀之片材形成,於除了剝離片S1以外之各層,在移除支持片及保護層之狀態下,設置有與半導體晶圓大致同等之大小之沖裁槽140c(punching groove)。即,圖示之例中,構成為保護層20及支持片S2在分別預切割成與半導體晶圓同等或其以上之大小之狀態下由剝離片S1支撐,並以基板尺寸接著於半導體晶圓W的背面。
圖5中的A至C係表示使保護層20接著於半導體晶圓W的背面之步驟之一例之示意剖面圖。如圖所示,針對複合片401,將剝離片S1剝離後貼合於半導體晶圓W的背面(圖5中的C中為上表面),並且實施保護層20之硬化處理。圖示之複合片401中,於預切割成比半導體晶圓尺寸大之尺寸之保護層20的周緣部,預先積層接著於環狀框RF之環狀之黏著劑層125,半導體晶圓W接著於由該黏著劑層125劃分之接著劑層區域的內側。積層於半
導體晶圓W的表面(圖5中的C中為下表面)之保護構件160在保護層20之硬化處理前被移除。
另一方面,圖6中的A所示之複合片402具有:保護層20,預切割成與半導體晶圓尺寸同等之大小;及支持片S2,預切割成比半導體晶圓尺寸大之尺寸;且剝離片S1以被覆保護層20之方式接著於支持片S2。然後,如圖6B、C所示,針對複合片402,將剝離片S1剝離後貼合於半導體晶圓W的背面(圖6中為上表面),並且實施保護層20之硬化處理。支持片S2經由未圖示之黏著劑層黏著支撐於環狀框RF。積層於半導體晶圓W的表面(圖6中的C中為下表面)之保護構件160在保護層20之硬化處理前被移除。
作為複合片140,可採用圖5中的A所示之複合片401,亦可採用圖6A所示之複合片402。另外,如上所述,複合片401、402中的支持片S2亦可由切割片構成。
本實施形態之半導體裝置100中,保護層20藉由使其接著面201接合於半導體基板11的背面而與半導體基板11一體化。因此,由於保護半導體基板11的背面之保護層20由單層構成,故而可實現保護層20及半導體裝置100之厚度變薄。
進而,由於保護層20由含有軟磁性粒子之複合材料構成,故而可提高半導體基板11的抗彎強度,並且可抑制自半導體基板11向外部釋出之電磁雜訊或自外部向半導體基板11侵入之電磁雜訊。
本發明者等人製作分散有60質量%之軟磁性粒子(鐵矽鋁合金,山陽特殊鋼公司製造,商品名「FME3DH」)之厚度300μm之保護層作為保護層20,基於國際標準IEC62333,將該片材貼附於微帶(microstrip)線路上,利用網路分析儀(network analyzer)測定此時的透射係數S21及反射係數S11。根據該等之測定值,使用Rtp=-10log10{10S21/10/(1-10S11/10)}
之式,算出Rtp(傳輸衰減率)。其結果,在測定頻率為5GHz時,Rtp之值為24.4。
進而,根據本實施形態,貼附於半導體基板的背面之保護層中含有軟磁性粒子,因此利用與具有不含軟磁性粒子之保護層之半導體裝置之製造步驟相同之步驟,可製造具備電磁波吸收功能之半導體裝置。因此,與於封裝有半導體裝置之配線基板上,以改造(retrofitting)之方式設置電磁波吸收片之情形相比,可減少步驟數。另外,無需用以於配線基板上另外設置該電磁波吸收片之空間,故而可實現零件之高密度安裝,因此可有助於電子機器之小型化、薄型化。
<第2實施形態>
圖7係表示本發明之第2實施形態之半導體裝置200的結構之概略側剖面圖。
如圖7所示,本實施形態之半導體裝置200具有第1半導體封裝P11與第2半導體封裝P12之積層結構(PoP:Package on Package)。
第1半導體封裝P11具有:第1配線基板21;及第1半導體晶片C1,且倒裝晶片安裝(倒裝晶片連接)於第1配線基板21上。
第2半導體封裝P12搭載於第1半導體封裝P11上。第2半導體封裝P12具有:第2配線基板22;及第2半導體晶片C2,且打線接合連接於第2配線基板22上。第2半導體晶片C2具有大小不同之2個半導體晶片C21、C22之積層結構。
第1半導體晶片C1、第2半導體晶片C2(C21、C22)典型而言由具有單晶矽(Si)基板之裸晶或CSP等半導體元件構成。於其表面形成電路面,該電路面係電晶體、記憶體等複數個電路元件積體化而成。
第1半導體晶片C1係利用使其電路面朝向第1配線基板21之面朝下方式安裝於第1配線基板21的上表面。第1半導體晶片C1經由形成於其電路面(圖中為下表面)之複數個凸塊(突起電極)41而電性、機械性連接於第1配線基板21。第1半導體晶片C1與第1配線基板21之接合例如可採用使用回焊爐(reflow furnace)之回流焊接法(reflow soldering method)。
典型而言,於第1半導體晶片C1與第1配線基板21之間設置底部填充樹脂層51。底部填充樹脂層51以如下目的設置:將第1半導體晶片C1的電路面及凸塊41密封而遮斷外部氣體,並提高第1半導體晶片C1與第1配線基板21之間的接合強度而提高凸塊41之連接可靠性。
於第1半導體晶片C1的背面(與電路面為相反側之面,圖中為上表面)接合有保護層20A,該保護層20A用以保護該半導體晶片C1。保護層20A與上述第1實施形態中的保護層20同樣地,由含有軟磁性粒子之單層之複合材料構成,且具有如下功能:提高第1半導體晶片C1的抗彎強度,並且抑制自第1半導體晶片C1放射之電磁雜訊或向第1半導體晶片C1入射之電磁雜訊。
另一方面,第2半導體晶片C2(C21、C22)係利用使各自的與電路面為相反側的背面朝向第2配線基板22之
面朝上(face up)方式安裝於第2配線基板22的上表面。第2半導體晶片C2(C21、C22)具有分別排列於該等的電路面(圖中上表面)之周圍之複數個電極焊墊(省略圖示),經由連接於各電極焊墊之複數個接合線42(bonding wire)而電性連接於第2配線基板22。
第2配線基板22與半導體晶片C21之間係經由非導電性之接著劑(省略圖示)而接合。另一方面,2個半導體晶片C21、C22經由保護層20B而相互接合。保護層20B與上述第1實施形態中的保護層20同樣地,由含有軟磁性粒子之單層之複合材料構成,且具有如下功能:抑制2個半導體晶片C21、C22間的電磁串擾。
第2配線基板22的上表面設置密封層52,該密封層52將第2半導體晶片C2(C21、C22)及接合線42密封。與底部填充樹脂層51同樣地,密封層52以如下目的設置:將第2半導體晶片C2(C21、C22)的電路面與外部氣體遮斷,並提高第2半導體晶片C2(C21、C22)與第2配線基板22之連接可靠性。
第1配線基板21及第2配線基板22分別可由同種材料構成,亦可由不同種材料構成。第1配線基板21及第2配線基板22典型而言由玻璃環氧基板、聚醯亞胺基板等有機系配線基板構成,但並不限定於此,亦可使用陶瓷
基板或金屬基板。配線基板之種類並無特別限定,可使用單面基板、雙面基板、多層基板、元件內置基板等各種基板。本實施形態中,第1配線基板21及第2配線基板22分別由具有通孔(via)V1、V2之玻璃環氧系之多層配線基板構成。
於第1配線基板21的背面(圖中下表面)設置有複數個外部連接端子31,該等複數個外部連接端子31連接於被稱為母板(mother board)等之控制基板110。第1配線基板21構成為裝介於第1半導體晶片C1與控制基板110之間之***式基板(interposer substrate)(子基板)(daughter board),亦具有如下作為再配線層之功能:將第1半導體晶片C1的電路面上的凸塊51之配置間隔轉換成控制基板110之焊盤間距(land pitch)。
於第2配線基板22的背面(圖中為下表面)設置有複數個凸塊32,該等複數個凸塊32連接於第1配線基板21的表面。第2配線基板22構成為將第2半導體晶片C2(C21、C22)連接於第1配線基板之***式基板,經由第1配線基板21及外部連接端子31而電性連接於控制基板110。
外部連接端子31及凸塊41、32典型而言由焊料凸塊(球凸塊)構成,但並不限定於此,亦可由電鍍凸塊或柱形
凸塊等其他突起電極構成。第2配線基板22與第1配線基板21之連接、及半導體裝置100與控制基板110之連接採用回流焊接法。
以上述方式構成之本實施形態之半導體裝置200中,於半導體晶片C1的背面設置有保護層20A,於半導體晶片C21與半導體晶片C22之間設置有保護層20B。如此,在半導體封裝P11、P12之積層方向上,於各半導體晶片C1、C21、C22之間設置有具有電磁波吸收功能之保護層20A、20B,因此可抑制該等半導體晶片間的電磁串擾,確保各自特定的電氣特性,因此可提高半導體裝置200之可靠性。而且,由於各保護層20A、20B由單層構成,故而可促進PoP結構之半導體裝置200之薄型化。
<第3實施形態>
圖8係表示本發明之第3實施形態之半導體裝置300的結構之概略側剖面圖。
如圖8所示,本實施形態之半導體裝置300具有第1半導體封裝P21與第2半導體封裝P22之積層結構(PoP:Package on Package)。第1半導體封裝P21及第2半導體封裝P22由扇出型之晶圓級封裝(Fan-Out WLP)構成。
半導體封裝P21、P22分別具有如下等:半導體晶片
C3、C4;封裝本體71、72,以比半導體晶片C3、C4大之尺寸形成;配線層711、721,設置於封裝本體71、72的下表面;及複數個凸塊61、62,固定於配線層711、721。
半導體晶片C3、C4使各自的電路面朝下而內置於封裝本體71、72,並且電性連接於配線層711、721。封裝本體71、72形成為比半導體晶片C3、C4大之尺寸,因此可使配線層711、721中半導體晶片C3、C4之電極間距大幅擴展,藉此可提高凸塊61、62之排列自由度。
第1半導體封裝P21之凸塊61用以將第1半導體封裝P21(半導體裝置300)連接於控制基板110。另一方面,第2半導體封裝P22之凸塊62連接於設置於第1半導體封裝P21的上表面之配線層712,經由設置於封裝本體71之通孔V3,而電性連接於配線層711及凸塊61。
半導體裝置300進而具備保護層20C。保護層20C設置於第1半導體封裝P21的背面(本例中為配線層712的上表面)。保護層20C與第1實施形態中的保護層20同樣地,由含有軟磁性粒子之單層之複合材料構成。保護層20C經由接著面201(參照圖2)而接合於封裝本體71的上表面(配線層712),並且具有用以將凸塊62連接於配線層712之開口部。
保護層20C在半硬化狀態下貼附於配線層712上後,藉由實施硬化處理而硬化。硬化處理可為積層第2半導體封裝P22之前,亦可為積層之後。
本實施形態之半導體裝置300中,保護層20C具有如下功能:提高第1半導體封裝P21的抗彎強度,並且抑制自半導體晶片C3放射之電磁雜訊或向半導體晶片C3入射之電磁雜訊。另外,保護層20C亦具有如下功能:抑制2個半導體封裝P21、P22間的電磁串擾。進而,保護層20C亦具有如下作為非導電性接著膜(NCF:Non-Conductive Film)之功能:提高第1半導體封裝P21與第2半導體封裝P22之間的接合強度。
<第4實施形態>
圖9係表示本發明之第4實施形態之半導體裝置400的結構之概略側剖面圖。
如圖9所示,本實施形態之半導體裝置400具有複數個半導體晶片C5、C6及C7之積層結構(CoC:Chip on Chip)。
各半導體晶片C5至C7使電路面朝下而進行積層。即,中間段之半導體晶片C6積層於最下段之半導體晶片C5的背面,最上段之半導體晶片C7積層於中間段之半導
體晶片C6的背面。
於最下段之半導體晶片C5及中間段之半導體晶片C6,在該等的厚度方向上分別設置有貫通之複數個通孔(TSV:Through-Silicon Via)V5、V6。通孔V5及通孔V6以相互對齊之方式在積層方向上對向,於該等通孔V5、V6之間分別配置有凸塊82,該凸塊82將半導體晶片C5與半導體晶片C6之間電性連接。另外,於通孔V5之下端分別配置有凸塊81,該凸塊81用以將半導體晶片C5(半導體裝置400)連接於控制基板110,於通孔V6之上端分別配置有凸塊83,該凸塊83用以將最上段之半導體晶片C7連接於半導體晶片C6。
半導體裝置400進而具有複數個接著層20D,該等複數個接著層20D將半導體晶片C5與半導體晶片C6之間、及半導體晶片C6與半導體晶片C7之間分別接合。接著層20D與第1實施形態中的保護層20同樣地,由含有軟磁性粒子之單層之複合材料構成。接著層20D並不限定於片狀或膜狀,亦可為糊狀。
各接著層20D在半硬化狀態下貼附於半導體晶片C5、C6上後,藉由實施硬化處理而硬化。硬化處理可針對各個接著層20D進行,亦可對全部接著層20D同時進行。
本實施形態之半導體裝置400中,接著層20D具有如下功能:提高各半導體晶片C5至C7的抗彎強度,並且抑制自各半導體晶片C5至C7放射之電磁雜訊或向各半導體晶片C5至C7入射之電磁雜訊。另外,接著層20D亦具有如下功能:抑制各半導體晶片C5至C7間的電磁串擾。進而,接著層20D亦具有如下作為非導電性接著膜(NCF:Non-Conductive Film)之功能:提高各半導體晶片C5至C7間的接合強度。
以上,對本發明之實施形態進行了說明,但當然本發明並不僅限定於上述之實施形態,而可施加各種變更。
例如,以上之實施形態中,作為半導體裝置,列舉WLCSP、PoP、CoC為例進行說明,但當然不限定於該等,例如本發明亦可應用於在配線基板的內部埋設有半導體元件之元件內置基板等,該情形時,於所埋設之半導體元件的背面設置本發明之保護層。藉此,可抑制該半導體元件與搭載於該元件內置基板上之各種電子零件之電磁串擾。
另外,以上之第4實施形態中,亦可於最上段之半導體晶片C7的背面(上表面)接合第1實施形態中所說明之保護層20。藉此,可實現半導體晶片C7的背面之保護,
並且進一步抑制自半導體晶片C7放射之電磁雜訊或向半導體晶片C7入射之電磁雜訊。
10‧‧‧半導體元件
11‧‧‧半導體基板
12‧‧‧配線層
13‧‧‧凸塊
20‧‧‧保護層
100‧‧‧半導體裝置
Claims (10)
- 一種半導體裝置,具備:半導體基板,具有構成電路面之第1面、及與前述第1面為相反側之第2面;及保護層,由含有軟磁性粒子之複合材料之單層構成,且具有接著於前述第2面之接著面。
- 如請求項1所記載之半導體裝置,其中前述複合材料由含有前述軟磁性粒子之接著樹脂之硬化物構成。
- 如請求項1或2所記載之半導體裝置,其中前述保護層進而含有導熱性粒子。
- 一種半導體裝置,具備:配線基板;半導體元件,具有構成電路面之第1面、及與前述第1面為相反側之第2面,且搭載於前述配線基板;及保護層,由含有軟磁性粒子之複合材料之單層構成,且具有接著於前述第2面之接著面。
- 如請求項4所記載之半導體裝置,其中進而具備半導體封裝零件,前述半導體封裝零件與前述配線基板電性連接;前述半導體元件配置於前述配線基板與前述半導體封裝零件之間。
- 一種半導體裝置,具備:第1半導體元件; 第2半導體元件,配置於前述第1半導體元件上,並與前述第1半導體元件電性連接;及接著層,由含有軟磁性粒子之非導電性複合材料構成,配置於前述第1半導體元件與前述第2半導體元件之間。
- 一種複合片,接合於半導體基板中之與構成電路面之第1面為相反側的第2面,且具備:保護層,由含有軟磁性粒子之複合材料之單層構成,且具有接著於前述第2面之接著面;及支持片,可剝離地貼附於前述保護層中之與前述接著面為相反側的表面。
- 如請求項7所記載之複合片,其中前述支持片由切割片構成。
- 如請求項7或8所記載之複合片,其中前述保護層進而含有導熱性的無機填料。
- 如請求項9所記載之複合片,其中前述無機填料包含非等向性形狀粒子,前述非等向性形狀粒子具有與前述保護層的厚度方向大致相同之長軸方向。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-202137 | 2015-10-13 | ||
JP2015202137A JP6872313B2 (ja) | 2015-10-13 | 2015-10-13 | 半導体装置および複合シート |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201725667A true TW201725667A (zh) | 2017-07-16 |
TWI751982B TWI751982B (zh) | 2022-01-11 |
Family
ID=58517601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105132873A TWI751982B (zh) | 2015-10-13 | 2016-10-12 | 半導體裝置及複合片 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20180240758A1 (zh) |
JP (1) | JP6872313B2 (zh) |
KR (1) | KR20180066174A (zh) |
CN (1) | CN108235784B (zh) |
TW (1) | TWI751982B (zh) |
WO (1) | WO2017065113A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102480379B1 (ko) | 2019-01-29 | 2022-12-23 | 주식회사 엘지화학 | 반도체 패키지의 제조방법 |
US10779421B1 (en) | 2019-02-07 | 2020-09-15 | Apple Inc. | Active electro-mechanical materials for protecting portable electronic devices |
JP7384560B2 (ja) * | 2019-02-09 | 2023-11-21 | デクセリアルズ株式会社 | 熱伝導シート、熱伝導シートの実装方法、電子機器の製造方法 |
KR102212079B1 (ko) * | 2019-03-22 | 2021-02-04 | 쓰리엠 이노베이티브 프로퍼티즈 캄파니 | 전자 어셈블리, 이를 포함하는 전자 장치 및 전자 어셈블리를 제작하는 방법 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0638460B2 (ja) * | 1989-11-08 | 1994-05-18 | 東海ゴム工業株式会社 | 放熱シート |
US5294826A (en) * | 1993-04-16 | 1994-03-15 | Northern Telecom Limited | Integrated circuit package and assembly thereof for thermal and EMI management |
JPH10256772A (ja) * | 1997-03-14 | 1998-09-25 | Daido Steel Co Ltd | 電磁波シールド用シートおよびそれを用いた電磁波シールド方法 |
JP2000114440A (ja) * | 1998-10-07 | 2000-04-21 | Daido Steel Co Ltd | 放熱シート |
JP2000133986A (ja) * | 1998-10-27 | 2000-05-12 | Murata Mfg Co Ltd | 放射ノイズ抑制部品の取付構造 |
JP2002158488A (ja) * | 2000-11-17 | 2002-05-31 | Tokin Corp | シート状ノイズ対策部品 |
JP3544362B2 (ja) * | 2001-03-21 | 2004-07-21 | リンテック株式会社 | 半導体チップの製造方法 |
JP2005235944A (ja) * | 2004-02-18 | 2005-09-02 | Tdk Corp | 電子デバイスおよびその製造方法 |
JP4642436B2 (ja) * | 2004-11-12 | 2011-03-02 | リンテック株式会社 | マーキング方法および保護膜形成兼ダイシング用シート |
JP2009054983A (ja) * | 2007-01-17 | 2009-03-12 | Mitsubishi Pencil Co Ltd | 電波吸収材およびその製造方法 |
JP4636113B2 (ja) * | 2008-04-23 | 2011-02-23 | Tdk株式会社 | 扁平状軟磁性材料及びその製造方法 |
JP5549600B2 (ja) * | 2009-02-07 | 2014-07-16 | 株式会社村田製作所 | 平板状コイル付きモジュールの製造方法及び平板状コイル付きモジュール |
JP5419226B2 (ja) | 2010-07-29 | 2014-02-19 | 日東電工株式会社 | フリップチップ型半導体裏面用フィルム及びその用途 |
JP2012044084A (ja) * | 2010-08-23 | 2012-03-01 | Sony Chemical & Information Device Corp | 電磁波吸収性熱伝導シート及び電磁波吸収性熱伝導シートの製造方法 |
JP2012124466A (ja) * | 2010-11-18 | 2012-06-28 | Nitto Denko Corp | 半導体装置用接着フィルム、及び、半導体装置 |
KR101711045B1 (ko) * | 2010-12-02 | 2017-03-02 | 삼성전자 주식회사 | 적층 패키지 구조물 |
JP5729186B2 (ja) * | 2011-07-14 | 2015-06-03 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
WO2013012587A2 (en) * | 2011-07-15 | 2013-01-24 | 3M Innovative Properties Company | Semiconductor package resin composition and usage method thereof |
JP5987358B2 (ja) * | 2012-03-01 | 2016-09-07 | 株式会社ソシオネクスト | 半導体装置及び半導体装置の製造方法 |
US9082940B2 (en) * | 2012-06-29 | 2015-07-14 | Nitto Denko Corporation | Encapsulating layer-covered semiconductor element, producing method thereof, and semiconductor device |
JP2014090157A (ja) * | 2012-10-03 | 2014-05-15 | Nitto Denko Corp | 封止シート被覆半導体素子、その製造方法、半導体装置およびその製造方法 |
JP2014130918A (ja) * | 2012-12-28 | 2014-07-10 | Nitto Denko Corp | 封止層被覆光半導体素子、その製造方法および光半導体装置 |
US10047256B2 (en) * | 2013-03-06 | 2018-08-14 | Dic Corporation | Epoxy resin composition, cured product, heat radiating material, and electronic member |
KR102187809B1 (ko) * | 2014-02-21 | 2020-12-07 | 삼성전자주식회사 | 자기 차폐부를 가지는 반도체 패키지 제조방법 |
JP5988004B1 (ja) * | 2016-04-12 | 2016-09-07 | Tdk株式会社 | 電子回路パッケージ |
-
2015
- 2015-10-13 JP JP2015202137A patent/JP6872313B2/ja active Active
-
2016
- 2016-10-07 KR KR1020187013021A patent/KR20180066174A/ko not_active Application Discontinuation
- 2016-10-07 WO PCT/JP2016/079997 patent/WO2017065113A1/ja active Application Filing
- 2016-10-07 US US15/765,184 patent/US20180240758A1/en not_active Abandoned
- 2016-10-07 CN CN201680059832.8A patent/CN108235784B/zh active Active
- 2016-10-12 TW TW105132873A patent/TWI751982B/zh active
Also Published As
Publication number | Publication date |
---|---|
US20180240758A1 (en) | 2018-08-23 |
TWI751982B (zh) | 2022-01-11 |
CN108235784B (zh) | 2021-05-25 |
CN108235784A (zh) | 2018-06-29 |
WO2017065113A1 (ja) | 2017-04-20 |
KR20180066174A (ko) | 2018-06-18 |
JP6872313B2 (ja) | 2021-05-19 |
JP2017076656A (ja) | 2017-04-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101484809B1 (ko) | 플립칩형 반도체 이면용 필름 및 그의 용도 | |
KR101640349B1 (ko) | 다이싱 테이프 일체형 반도체 이면용 필름 | |
JP6795375B2 (ja) | 電波吸収体、半導体装置および複合シート | |
US20130062760A1 (en) | Packaging Methods and Structures Using a Die Attach Film | |
US20120126380A1 (en) | Film for the backside of flip-chip type semiconductor, dicing tape-integrated film for the backside of semiconductor, method of manufacturing film for the backside of flip-chip type semiconductor, and semiconductor device | |
US20140231973A1 (en) | Semiconductor device including electromagnetic absorption and shielding | |
US20120126381A1 (en) | Adhesive film for semiconductor device, and semiconductor device | |
TWI751982B (zh) | 半導體裝置及複合片 | |
US20180346640A1 (en) | Film for flip chip type semiconductor back surface, process for producing strip film for semiconductor back surface, and flip chip type semiconductor device | |
JP5580730B2 (ja) | ダイシング・ダイボンドフィルム及び半導体素子 | |
JP2016119493A (ja) | ダイボンドフィルム、ダイシング・ダイボンドフィルム、ダイボンドフィルムの製造方法、及び、ダイボンドフィルムを有する半導体装置 | |
KR20110074471A (ko) | 플립 칩형 반도체 후면용 필름 | |
JP2012142368A (ja) | ダイシング・ダイボンドフィルム及び半導体素子 | |
KR20210002889A (ko) | 반도체 패키지 | |
TW200913207A (en) | Semiconductor package and method for manufacturing the same | |
JP6429824B2 (ja) | 電子デバイスパッケージ用テープ | |
WO2017168824A1 (ja) | 電子デバイスパッケージ、電子デバイスパッケージの製造方法、および電子デバイスパッケージ用テープ | |
KR20120011822A (ko) | 플립 칩형 반도체 이면용 필름, 다이싱 테이프 일체형 반도체 이면용 필름, 반도체 장치의 제조 방법 및 플립 칩형 반도체 장치 | |
JP2015103580A (ja) | 熱硬化型ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、熱硬化型ダイボンドフィルムの製造方法、及び、半導体装置の製造方法 | |
JP2016119331A (ja) | 半導体装置及び半導体装置の製造方法 | |
JP2015103573A (ja) | 熱硬化型ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、及び、半導体装置の製造方法 | |
US20190074247A1 (en) | Printed circuit board and method of packaging the same | |
JP2015103581A (ja) | 半導体装置の製造方法 | |
JP2019102498A (ja) | 電子部品封止体の製造方法、電子装置の製造方法 | |
JP2015103577A (ja) | 熱硬化型ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、及び、半導体装置の製造方法 |