TW201724680A - Over voltage protection device - Google Patents
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Abstract
Description
本發明過電壓保護裝置係一種保護電路之技術領域，包括有：可調整精密並接調整器(Adjustable Precision Shunt Regulator,APSR)電路、第一半導體電路與第二半導體電路，為保護負載或電源供應在設定電壓工作，避免過電壓所造成之損害。 The overvoltage protection device of the present invention is a technical field of protection circuits, including: an Adjustable Precision Shunt Regulator (APSR) circuit, a first semiconductor circuit and a second semiconductor circuit for protecting a load or a power supply. Work at set voltage to avoid damage caused by overvoltage.
如圖7所示，為習知大電流並接調整器(High Current Shunt Regulator,HCSR)電路，自圖中可知，其輸入電壓V+經過串聯電阻RS至輸出電壓端Vout，在輸出電壓端Vout與接地端G之間連接有可調整精密並接調整器集體電路IC1與分壓電路，其分壓電路包括有第一電阻R1與第二電阻R2，第一電阻R1與第二電阻R2串聯連接的中點P連接到可調整精密並接調整器集體電路IC1的參考電壓端Vref，第三電阻R3為基極電阻，其輸出電壓Vout為：Vout=(1+R1/R2)Vref式中，Vref為可調整精密並接調整器集體電路IC1的參考電壓，約為2.5V。 As shown in FIG. 7 , it is a conventional high current Shunt Regulator (HCSR) circuit. As can be seen from the figure, the input voltage V+ passes through the series resistor RS to the output voltage terminal Vout at the output voltage terminal Vout and The grounding terminal G is connected with an adjustable precision parallel connection regulator collective circuit IC1 and a voltage dividing circuit, and the voltage dividing circuit comprises a first resistor R1 and a second resistor R2, and the first resistor R1 and the second resistor R2 are connected in series The connected midpoint P is connected to the reference voltage terminal Vref of the adjustable precision parallel connection regulator circuit IC1, and the third resistor R3 is the base resistance, and the output voltage Vout is: Vout=(1+R1/R2)Vref Vref is the reference voltage of the adjustable precision parallel connection regulator circuit IC1, which is about 2.5V.
自圖7可知，V+=IRS+Vout，當設定Vout端的負載不變時，此時若輸入電壓V+值增加則流經串聯電阻RS的 電流I值增加，因此IRS值增加，由此可知，習知大電流並接調整器電路對於輸入電壓V+值的增加並無過電壓保護的功能，而僅有維持輸出電壓Vout為定值，而且半導體T1常在射基極不飽和電壓下工作，會產生高溫損耗，其有以下的缺點： As can be seen from Fig. 7, V+=IRS+Vout, when the load at the Vout terminal is set to be constant, at this time, if the input voltage V+ value increases, it flows through the series resistor RS. The value of the current I increases, and thus the IRS value increases. It can be seen that the conventional high current parallel connection regulator circuit has no overvoltage protection function for the increase of the input voltage V+ value, and only maintains the output voltage Vout to a fixed value, and Semiconductor T1 often operates at the emitter's very unsaturated voltage, which can cause high temperature losses, which have the following disadvantages:
1.對於輸入電壓V+無法控制其為精密定值之過電壓保護的功能。 1. For the input voltage V+, it cannot control the function of over-voltage protection with precise setting.
2.半導體T1常在射基極不飽和電壓下工作，會產生高溫損耗，使半導體T1的動作曲線不穩定，影響其可調整精密並接調整器集體電路IC1的精確控制功能。 2. The semiconductor T1 often works under the emitter's extremely unsaturated voltage, which will cause high temperature loss, which makes the operation curve of the semiconductor T1 unstable, affecting the precise control function of the adjustable precision parallel connection controller IC1.
3.串聯電阻RS為大功率電阻其誤差值大，當輸入電壓V+值上升增加時，包括可調整精密並接調整器集體電路IC1供電所需之電流，其所增加的電壓值皆為串聯電阻RS的電壓降損耗，而使串聯電阻RS的電阻值隨溫度的變化而變動其電阻值。 3. The series resistance RS is a large power resistor with a large error value. When the input voltage V+ value increases, the current required to supply the adjustable collective circuit IC1 can be adjusted, and the added voltage value is series resistance. The voltage drop loss of the RS causes the resistance value of the series resistor RS to vary its resistance value as a function of temperature.
本發明的目的： The purpose of the invention:
1.本發明為能達到輸入電壓V+為定值之過電壓保護裝置，以取代習知大電流並接調整器電路無法達到輸入電壓V+為定值之過電壓保護缺點。 1. The present invention is an overvoltage protection device capable of achieving an input voltage V+ of a constant value, in place of the conventional overcurrent protection circuit which cannot achieve the overvoltage protection of the input voltage V+.
2.本發明為應用於定電壓(Constant Voltage)，定電流(Constant Current)的電池充電電路，可以達到充電中之電池不致於因過高充電電壓而損壞，具有過電壓保護之功能。 2. The invention is a battery charging circuit applied to constant voltage and constant current, which can achieve the function that the battery in charging is not damaged by excessive charging voltage and has overvoltage protection.
3.本發明為應用於定電壓，定電流的電池充電電路，可以達到充電中之電池過電壓時執行分流之功能，使其設定電壓值不變。 3. The invention is a battery charging circuit applied to a constant voltage and a constant current, and can perform a function of shunting when the battery overvoltage is being charged, so that the set voltage value is unchanged.
4.本發明為應用於直流電源對負載供電，若負載因直流 電源之電壓過高會有損壞負載與電源過載之虞時，可以應用本發明之過電壓保護功能，將直流電源與負載開路，而達到保護負載與電源之目的。 4. The present invention is applied to a DC power supply to supply power to a load, if the load is due to DC When the voltage of the power supply is too high, the load and the power supply are overloaded, and the overvoltage protection function of the present invention can be applied to open the DC power supply and the load to achieve the purpose of protecting the load and the power supply.
本發明有下列之特徵：本發明應用可調整精密並接調整器電路，其包括可調整精密並接調整器集體電路與分壓電路，其特徵為借由可調整精密並接調整器集體電路之精密參考電壓值而達到精確的過電壓保護值。 The invention has the following features: the invention applies an adjustable precision parallel connection adjuster circuit, which comprises an adjustable precision parallel connection adjuster collective circuit and a voltage dividing circuit, which is characterized by an adjustable precision parallel connection regulator collective circuit The precise reference voltage value achieves an accurate overvoltage protection value.
本發明應用第一半導體電路，其包括第一半導體，第一半導體基極(Base)電阻與第一半導體射極(Emitter)電阻，其特徵為第一半導體基極電阻具有對可調整精密並接調整器集體電路限電流作用，同時亦提供第一半導體基極電壓(Base Voltage)，第一半導體射極電阻為提供第一半導體射極電壓，當第一半導體導通時，亦成為可調整精密並接調整器集體電路的限電流電阻作用。 The invention applies a first semiconductor circuit comprising a first semiconductor, a first semiconductor base resistance and a first semiconductor emitter (Emitter) resistor, characterized in that the first semiconductor base resistor has an adjustable precision parallel connection The regulator collective circuit limits the current, and also provides a first semiconductor base voltage (Base Voltage), the first semiconductor emitter resistance is to provide a first semiconductor emitter voltage, when the first semiconductor is turned on, it also becomes adjustable precision and Connect the current limiting resistor of the regulator collective circuit.
本發明應用第二半導體電路，其包括第二半導體、閘極電阻與分流電阻(Shunt Resistor)或電容器(Capacity)，其特徵為第二半導體的閘極(Gate)連接閘極電阻的一端與第一半導體的受極(Collector)，閘極電阻的另一端連接負電端，第二半導體的集極(Drain)連接分流電阻或電容器的另一端，分流電阻或電容器的一端連接電源正電端，作為保護負載或電源之用，第二半導體的源極(Source))連接負電端。 The present invention applies a second semiconductor circuit including a second semiconductor, a gate resistor and a shunt resistor or a capacitor, characterized in that a gate of the second semiconductor is connected to one end of the gate resistor and a collector of a semiconductor, the other end of the gate resistor is connected to the negative terminal, the collector of the second semiconductor is connected to the other end of the shunt resistor or the capacitor, and one end of the shunt resistor or capacitor is connected to the positive terminal of the power supply as To protect the load or power supply, the source of the second semiconductor is connected to the negative terminal.
本發明所應用的保護元件，包括有分流電阻、電容器(Capacity)與半導體元件。 The protection element to which the present invention is applied includes a shunt resistor, a capacitor, and a semiconductor element.
10‧‧‧可調整精密並接調整器電路 10‧‧‧Adjustable precision parallel connection regulator circuit
11‧‧‧第一電阻 11‧‧‧First resistance
12‧‧‧第二電阻 12‧‧‧second resistance
13‧‧‧可調整精密並接調整器 13‧‧‧Adjustable precision parallel adjuster
A‧‧‧可調整精密並接調整器的陽極端 A‧‧‧Adjustable anode side of precision parallel regulator
K‧‧‧可調整精密並接調整器的陰極端 K‧‧‧Adjustable cathode side of precision parallel regulator
Vref‧‧‧可調整精密並接調整器的參考電壓端 Vref‧‧‧ can adjust the reference voltage terminal of the precision parallel connection regulator
20‧‧‧第一半導體電路 20‧‧‧First semiconductor circuit
21‧‧‧第一半導體的基極電阻 21‧‧‧Base resistance of the first semiconductor
22‧‧‧第一半導體的射極電阻 22‧‧‧ the emitter resistance of the first semiconductor
23‧‧‧第一半導體 23‧‧‧First Semiconductor
30‧‧‧第二半導體電路 30‧‧‧Second semiconductor circuit
31‧‧‧第二半導體的閘極電阻 31‧‧‧The gate resistance of the second semiconductor
32‧‧‧第二半導體 32‧‧‧Second Semiconductor
33‧‧‧分流電阻 33‧‧‧Shunt resistor
34‧‧‧電容器 34‧‧‧ Capacitors
40‧‧‧第三半導體電路 40‧‧‧ Third semiconductor circuit
41‧‧‧第三半導體 41‧‧‧ Third Semiconductor
42‧‧‧第三半導體的閘極電阻 42‧‧‧3rd semiconductor gate resistance
50‧‧‧負載 50‧‧‧ load
60‧‧‧直流電源供應器 60‧‧‧DC power supply
100‧‧‧過電壓保護裝置 100‧‧‧Overvoltage protection device
200‧‧‧電池 200‧‧‧Battery
300‧‧‧充電裝置 300‧‧‧Charging device
400‧‧‧第一電池電路 400‧‧‧First battery circuit
500‧‧‧第二電池電路 500‧‧‧Second battery circuit
600‧‧‧第三電池電路 600‧‧‧ third battery circuit
700‧‧‧第N電池電路 700‧‧‧Nth battery circuit
V+‧‧‧正電端 V+‧‧‧ positive terminal
V-‧‧‧負電端 V-‧‧‧ negative terminal
圖1 為本發明過電壓保護裝置。 Figure 1 shows the overvoltage protection device of the present invention.
圖2 為本發明過電壓保護裝置的第一實施例。 2 is a first embodiment of the overvoltage protection device of the present invention.
圖3 為本發明過電壓保護裝置的第二實施例。 3 is a second embodiment of the overvoltage protection device of the present invention.
圖4 為本發明過電壓保護裝置的第三實施例。 4 is a third embodiment of the overvoltage protection device of the present invention.
圖5 為本發明過電壓保護裝置的第四實施例。 Figure 5 is a fourth embodiment of the overvoltage protection device of the present invention.
圖6 為本發明過電壓保護裝置的第五實施例。 Figure 6 is a fifth embodiment of the overvoltage protection device of the present invention.
圖7 為習知大電流並接調整器電路。 Figure 7 shows a conventional high current parallel regulator circuit.
如圖1所示，為本發明過電壓保護裝置，自圖中可知，過電壓保護裝置100包括有：可調整精密並接調整器電路10、第一半導體電路20與第二半導體電路30；可調整精密並接調整器電路10包括有第一電阻11、第二電阻12與可調整精密並接調整器13，可調整精密並接調整器13之參考電壓端Vref連接第一電阻11的另一端與第二電阻12的一端串聯連接的中點端，第一電阻11的一端連接正電端V+，第二電阻12的另一端連接負電端V-，可調整精密並接調整器13的陽極端A(Anode,A)連接負電端V-，可調整精密並接調整器13的陰極端K(Cathode,K)連接到第一半導體23的基極B與基極電阻21的另一端；第一半導體電路20包括有第一半導體23、射極電阻22與基極電阻21，第一半導體23為PNP型電晶體(PNP Type transistor)，第一半導體23的基極B連接基極電阻21的另一端與可調整精密並接調整器13的陰極端K，基極電阻21的一端連接正電端V+，第一半導體23的射極E連接射極電阻22的另一端，射極電阻22的一端連接正電端V+，第一半 導體23的受極C連接第二半導體32的閘極G(Gate,G)與閘極電阻31的另一端；第二半導體電路30包括有第二半導體32、閘極電阻31與分流電阻33，第二半導體32為N通道金屬氧化半導體埸效電晶體(N Channel Metal-Oxide Semiconductor Field-Effect Transistor,MOSFET)，第二半導體32的閘極G連接第一半導體23的受極C與閘極電阻31的一端，閘極電阻31的另一端連接負電端V-，第二半導體32的集極D連接分流電阻33的另一端，分流電阻33的一端連接正電端V+，第二半導體32的源極S連接負電端V-。 As shown in FIG. 1 , the overvoltage protection device of the present invention, as shown in the figure, the overvoltage protection device 100 includes: an adjustable precision parallel connection regulator circuit 10, a first semiconductor circuit 20 and a second semiconductor circuit 30; The adjustment precision parallel connection adjuster circuit 10 includes a first resistor 11, a second resistor 12 and an adjustable precision parallel connection adjuster 13, and the reference voltage terminal Vref of the precision parallel connection adjuster 13 is connected to the other end of the first resistor 11. A midpoint end connected in series with one end of the second resistor 12, one end of the first resistor 11 is connected to the positive terminal V+, and the other end of the second resistor 12 is connected to the negative terminal V-, and the anode end of the precision parallel connection adjuster 13 can be adjusted. A (Anode, A) is connected to the negative terminal V-, and the cathode end K (Cathode, K) of the adjustable precision parallel connection regulator 13 is connected to the base B of the first semiconductor 23 and the other end of the base resistor 21; The semiconductor circuit 20 includes a first semiconductor 23, an emitter resistor 22 and a base resistor 21, the first semiconductor 23 is a PNP type transistor, and the base B of the first semiconductor 23 is connected to the base resistor 21 One end and a cathode end K of the adjustable precision parallel connection regulator 13, Positively charged end of the resistor 21 is connected to terminal V +, the emitter of the first semiconductor 23 and the other end connected to the emitter E resistor 22, one end of the emitter resistor 22 is connected to the positively charged end of V +, the first half The terminal C of the conductor 23 is connected to the gate G (Gate, G) of the second semiconductor 32 and the other end of the gate resistor 31; the second semiconductor circuit 30 includes a second semiconductor 32, a gate resistor 31 and a shunt resistor 33, The second semiconductor 32 is an N-channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET), and the gate G of the second semiconductor 32 is connected to the gate C and the gate resistor of the first semiconductor 23. One end of the 31, the other end of the gate resistor 31 is connected to the negative terminal V-, the collector D of the second semiconductor 32 is connected to the other end of the shunt resistor 33, and one end of the shunt resistor 33 is connected to the positive terminal V+, the source of the second semiconductor 32 The pole S is connected to the negative terminal V-.
如圖1所示，其動作原理為： As shown in Figure 1, the principle of operation is:
1.當正電端V+的電壓由0V逐漸上升到小於可調整精密並接調整器13之參考電壓Vref 2.5V時：此時可調整精密並接調整器13之陽極端A與陰極端K開路，第一半導體23的基極B的正電位高於第一半導體23的射極E的正電位，因而第一半導體23開路，第一半導體23的受極C無電壓供給第二半導體32的閘極G，此時第二半導體32的集極D與源極S開路，因而分流電阻33無電流通過，此時本發明電路之正電端V+與負電端V-為開路狀態。 1. When the voltage of the positive terminal V+ gradually rises from 0V to less than the reference voltage Vref 2.5V of the adjustable precision parallel connection regulator 13: the anode terminal A and the cathode terminal K of the precision parallel connection regulator 13 can be adjusted at this time. The positive potential of the base B of the first semiconductor 23 is higher than the positive potential of the emitter E of the first semiconductor 23, and thus the first semiconductor 23 is open, and the gate C of the first semiconductor 23 is supplied with no voltage to the gate of the second semiconductor 32. At this time, the collector D and the source S of the second semiconductor 32 are open, and thus the shunt resistor 33 has no current. At this time, the positive terminal V+ and the negative terminal V- of the circuit of the present invention are in an open state.
2.當正電端V+的電壓由0V逐漸上升到可調整精密並接調整器13之參考電壓Vref 2.5V時：此時可調整精密並接調整器13之陽極端A與陰極端K導通，第一半導體23的基極B的正電位低於第一半導體23的射極E的正電位，因而第一半導體23導通，第一半導體23的受極C供給電壓給第二半導體32的閘極G，此時第二半導體32的集極D與源極S導通，因而分流電阻33有電流通過而執行分流作用，以保護正電端V+與負電端V-間之負載或電源， 以避免負載或電源因其過高電壓造成損壞，而達到過高電壓保護之目的。 2. When the voltage of the positive terminal V+ gradually rises from 0V to the reference voltage Vref 2.5V of the adjustable precision parallel connection regulator 13, the anode end A and the cathode terminal K of the precision parallel connection regulator 13 can be adjusted to be turned on at this time. The positive potential of the base B of the first semiconductor 23 is lower than the positive potential of the emitter E of the first semiconductor 23, and thus the first semiconductor 23 is turned on, and the terminal C of the first semiconductor 23 supplies a voltage to the gate of the second semiconductor 32. G, at this time, the collector D of the second semiconductor 32 is turned on and the source S is turned on, so that the shunt resistor 33 has a current passing through to perform a shunting action to protect the load or power between the positive terminal V+ and the negative terminal V-. To avoid damage to the load or power supply due to excessive voltage, and to achieve excessive voltage protection.
3.當正電端V+的電壓由0V逐漸上升到可調整精密並接調整器13之參考電壓Vref 2.5V以上時：此時可調整精密並接調整器13之陽極端A與陰極端K導通，第一半導體23的基極B的正電位低於第一半導體23的射極E的正電位，因而第一半導體23導通，第一半導體23的受極C供給電壓給第二半導體32的閘極G，此時第二半導體32的集極D與源極S導通，因而分流電阻33有電流通過而執行分流作用，只是其經過分流電阻33的分流電流增加而己，只要選用的分流電阻33與第二半導體32適當，仍可以保護正電端V+與負電端V-間之負載或電源，以避免負載或電源因其過高電壓造成損壞，而達到維持過高電壓保護之目的。 3. When the voltage of the positive terminal V+ gradually rises from 0V to the reference voltage Vref 2.5V of the adjustable precision parallel connection regulator 13: the anode end A and the cathode terminal K of the precision parallel connection regulator 13 can be adjusted at this time. The positive potential of the base B of the first semiconductor 23 is lower than the positive potential of the emitter E of the first semiconductor 23, and thus the first semiconductor 23 is turned on, and the terminal C of the first semiconductor 23 supplies a voltage to the gate of the second semiconductor 32. The pole G, at this time, the collector D of the second semiconductor 32 is electrically connected to the source S. Therefore, the shunt resistor 33 has a current passing through to perform the shunting action, except that the shunt current passing through the shunt resistor 33 is increased, as long as the shunt resistor 33 is selected. As appropriate with the second semiconductor 32, the load or power supply between the positive terminal V+ and the negative terminal V- can still be protected to prevent the load or the power source from being damaged due to its excessive voltage, thereby achieving the purpose of maintaining excessive voltage protection.
如圖2所示，為本發明過電壓保護裝置的第一實施例，自圖2可知，為在圖1過電壓保護裝置100的正電端V+與負電端V-之間連接電池200與充電裝置300而構成一個電池200充電電路，其充電裝置300具備有定電壓與定電流之充電功能特徵；其動作原理為： 2 is a first embodiment of the overvoltage protection device of the present invention. As can be seen from FIG. 2, the battery 200 is connected and charged between the positive terminal V+ and the negative terminal V- of the overvoltage protection device 100 of FIG. The device 300 constitutes a battery 200 charging circuit, and the charging device 300 is provided with a charging function having a constant voltage and a constant current; the operating principle is as follows:
1.當充電裝置300對電池200執行充電動作時，電池200電位逐漸上升，而未達到可調整精密並接調整器13之參考電壓Vref 2.5V時：此時可調整精密並接調整器13之陽極端A與陰極端K開路，第一半導體23的基極B的正電位高於第一半導體23的射極E的正電位，因而第一半導體23開路，第一半導體23的受極C無電壓供給第二半導體32的閘極G，此時第二半導體32的集極D與源 極S開路，因而分流電阻33無電流通過，此時本發明電路之正電端V+與負電端V-為開路狀態。 1. When the charging device 300 performs a charging operation on the battery 200, the potential of the battery 200 gradually rises, and when the reference voltage Vref 2.5V of the adjustable precision parallel connection regulator 13 is not reached: the precision parallel connection adjuster 13 can be adjusted at this time. The anode terminal A and the cathode terminal K are open, the positive potential of the base B of the first semiconductor 23 is higher than the positive potential of the emitter E of the first semiconductor 23, and thus the first semiconductor 23 is open, and the receptor C of the first semiconductor 23 is absent. The voltage is supplied to the gate G of the second semiconductor 32, at which point the collector D of the second semiconductor 32 and the source The pole S is open, and thus the shunt resistor 33 has no current flowing. At this time, the positive terminal V+ and the negative terminal V- of the circuit of the present invention are in an open state.
2.當充電裝置300對電池200執行充電動作時，電池200電位逐漸上升，而達到可調整精密並接調整器13之參考電壓Vref 2.5V時：此時可調整精密並接調整器13之陽極端A與陰極端K導通，第一半導體23的基極B的正電位低於第一半導體23的射極E的正電位，因而第一半導體23導通，第一半導體23的受極C供給電壓給第二半導體32的閘極G，此時第二半導體32的集極D與源極S導通，因而分流電阻33有電流通過而執行分流作用，以保護正電端V+與負電端V-間之電池200安全，以避免電池200因其過高電壓造成損壞，而達到過高電壓保護之目的。 2. When the charging device 300 performs a charging operation on the battery 200, the potential of the battery 200 gradually rises, and reaches the reference voltage Vref 2.5V of the adjustable precision parallel connection adjuster 13: the amp of the precision parallel connection adjuster 13 can be adjusted at this time. The terminal A and the cathode terminal K are turned on, the positive potential of the base B of the first semiconductor 23 is lower than the positive potential of the emitter E of the first semiconductor 23, and thus the first semiconductor 23 is turned on, and the voltage of the terminal C of the first semiconductor 23 is supplied. The gate G of the second semiconductor 32 is turned on. At this time, the collector D of the second semiconductor 32 is turned on and the source S is turned on. Therefore, the shunt resistor 33 has a current passing through to perform a shunting action to protect the positive terminal V+ and the negative terminal V-. The battery 200 is safe to prevent the battery 200 from being damaged due to its excessive voltage, thereby achieving the purpose of excessive voltage protection.
3.當充電裝置300對電池200執行充電動作時，電池200電位繼續達到可調整精密並接調整器13之參考電壓Vref 2.5V時：此時可調整精密並接調整器13之陽極端A與陰極端K導通，第一半導體23的基極B的正電位低於第一半導體23的射極E的正電位，因而第一半導體23導通，第一半導體23的受極C供給電壓給第二半導體32的閘極G，此時第二半導體32的集極D與源極S導通，因而分流電阻33有電流通過而繼續執行分流作用，以保護正電端V+與負電端V-之間電池200之安全；在此特別說明，一般充電裝置300對於電池200執行充電動作時皆以定電壓及定電流方式充電，充電電壓的設定是以電池200之最高電壓值以內之電壓值為充電電壓，其充電電流為限定電流，是避免充電電流因執行高電流快速充電而損壞電池 200，依實際充電的實際需求可知，其當電池200在超過最高電壓值之前或後，本發明電路即執行過電壓保護動作，以保護電池200的安全，則視其電池200的特性及充電需求而定，而不予自限。 3. When the charging device 300 performs the charging operation on the battery 200, the potential of the battery 200 continues to reach the adjustable reference voltage Vref 2.5V of the parallel regulator 13: the anode end A of the precision parallel connection adjuster 13 can be adjusted at this time. The cathode terminal K is turned on, the positive potential of the base B of the first semiconductor 23 is lower than the positive potential of the emitter E of the first semiconductor 23, and thus the first semiconductor 23 is turned on, and the bias C of the first semiconductor 23 is supplied with voltage to the second The gate G of the semiconductor 32, at this time, the collector D of the second semiconductor 32 is turned on with the source S, so that the shunt resistor 33 has a current to continue to perform the shunting action to protect the battery between the positive terminal V+ and the negative terminal V-. 200 is safe; here, in particular, the charging device 300 is charged in a constant voltage and a constant current manner when the charging operation is performed on the battery 200. The charging voltage is set to be a charging voltage within a voltage value of the highest voltage of the battery 200. The charging current is a limited current, which is to prevent the charging current from damaging the battery due to performing high current fast charging. 200, according to the actual demand of actual charging, when the battery 200 exceeds the highest voltage value, the circuit of the present invention performs an overvoltage protection action to protect the safety of the battery 200, depending on the characteristics of the battery 200 and the charging demand. And not limited.
如圖3所示，為本發明過電壓保護裝置的第二實施例，自圖3可知，為多個圖1所示之過電壓保護裝置100的正電端V+與負電端V-之間連接電池200的串聯連接電路，過電壓保護裝置100的正電端V+與負電端V-之間連接電池200的第一電路稱為第一電池電路400；過電壓保護裝置100的正電端V+與負電端V-之間連接電池200的第二電路稱為第二電池電路500；過電壓保護裝置100的正電端V+與負電端V-之間連接電池200的第三電路稱為第三電池電路600；過電壓保護裝置100正電端V+與負電端V-間之連接電池200的第N電路稱為第N電池電路700；其第一電池電路400的正電端V+連接充電裝置300的正電端G+，第N電池電路700的負電端V-連接充電裝置300的負電端G-；其動作原理為： As shown in FIG. 3, a second embodiment of the overvoltage protection device of the present invention, as shown in FIG. 3, is a connection between the positive terminal V+ and the negative terminal V- of the plurality of overvoltage protection devices 100 shown in FIG. The series connection circuit of the battery 200, the first circuit connecting the battery 200 between the positive terminal V+ and the negative terminal V- of the overvoltage protection device 100 is referred to as a first battery circuit 400; the positive terminal V+ of the overvoltage protection device 100 is The second circuit connecting the battery 200 between the negative terminal V- is referred to as the second battery circuit 500; the third circuit connecting the battery 200 between the positive terminal V+ and the negative terminal V- of the overvoltage protection device 100 is referred to as a third battery. The circuit N; the Nth circuit connecting the battery 200 between the positive terminal V+ and the negative terminal V- of the overvoltage protection device 100 is referred to as an Nth battery circuit 700; the positive terminal V+ of the first battery circuit 400 is connected to the charging device 300 The positive terminal G+, the negative terminal V- of the Nth battery circuit 700 is connected to the negative terminal G- of the charging device 300; the operating principle is:
1.當充電裝置300對第一電池電路400、第二電池電路500、第三電池電路600與第N電池電路700執行充電動作時，各電池電路的電池200電位逐漸上升，而未達到可調整精密並接調整器13之參考電壓Vref 2.5V時：此時第一電池電路400、第二電池電路500、第三電池電路600與第N電池電路700執行充電動作。 1. When the charging device 300 performs a charging operation on the first battery circuit 400, the second battery circuit 500, the third battery circuit 600, and the Nth battery circuit 700, the potential of the battery 200 of each battery circuit gradually rises and does not reach an adjustable state. When the reference voltage Vref of the regulator 13 is closely connected to 2.5 V: at this time, the first battery circuit 400, the second battery circuit 500, the third battery circuit 600, and the Nth battery circuit 700 perform a charging operation.
2.當充電裝置300對第一電池電路400、第二電池電路500、第三電池電路600與第N電池電路700執行充電動作時，第一電池電路400的電池200電位先達到可調整精密並接調整器13之參考電壓Vref 2.5V時： 此時第一電池電路400中的過電壓保護電路100的第二半導體32的集極D與源極S導通，因而分流電阻33有電流通過而執行分流作用，以保護電池200安全，可以避免電池200因其過高電壓造成損壞，而達到過高電壓保護之目的，其餘第二電池電路500、第三電池電路600與第N電池電路700繼續執行充電動作。 2. When the charging device 300 performs a charging operation on the first battery circuit 400, the second battery circuit 500, the third battery circuit 600, and the Nth battery circuit 700, the potential of the battery 200 of the first battery circuit 400 reaches the adjustable precision first. When the reference voltage Vref 2.5V of the regulator 13 is connected: At this time, the collector D of the second semiconductor 32 of the overvoltage protection circuit 100 in the first battery circuit 400 is electrically connected to the source S, and thus the shunt resistor 33 has a current to pass through to perform a shunting function to protect the battery 200 from being safe, and the battery can be avoided. The second battery circuit 500, the third battery circuit 600, and the Nth battery circuit 700 continue to perform the charging operation for the purpose of over-voltage protection due to damage caused by excessive voltage.
3.當充電裝置300對第一電池電路400、第二電池電路500、第三電池電路600與第N電池電路700執行充電動作時，第一電池電路400與第二電池電路500的電池200電位達到可調整精密並接調整器13之參考電壓Vref 2.5V時：此時第一電池電路400與第二電池電路500中的過電壓保護裝置100的第二半導體32的集極D與源極S導通，因而分流電阻33有電流通過而執行分流作用，以保護電池200安全，可以避免電池200因其過高電壓造成損壞，而達到過高電壓保護之目的，其餘第三電池電路600與第N電池電路700繼續執行充電動作。 3. When the charging device 300 performs a charging operation on the first battery circuit 400, the second battery circuit 500, the third battery circuit 600, and the Nth battery circuit 700, the battery potential of the first battery circuit 400 and the second battery circuit 500 When the reference voltage Vref 2.5V of the adjustable precision parallel connection regulator 13 is reached: the collector D and the source S of the second semiconductor 32 of the overvoltage protection device 100 in the first battery circuit 400 and the second battery circuit 500 at this time Turning on, the shunt resistor 33 has a current through to perform a shunting function to protect the battery 200 from being safe, and the battery 200 can be prevented from being damaged due to its excessive voltage, thereby achieving the purpose of excessive voltage protection, and the remaining third battery circuits 600 and N Battery circuit 700 continues to perform the charging action.
4.當充電裝置300對第一電池電路400、第二電池電路500、第三電池電路600與第N電池電路700執行充電動作時，第一電池電路400、第二電池電路500與第三電池電路600的電池200電位達到可調整精密並接調整器13之參考電壓Vref 2.5V時：此時第一電池電路400、第二電池電路500與第三電池電路600中的過電壓保護裝置100的第二半導體32的集極D與源極S導通，因而分流電阻33有電流通過而執行分流作用，以保護電池200安全，可以避免電池200因其過高電壓造成損壞，而達到過高 電壓保護之目的，其第N電池電路700繼續執行充電動作。 4. When the charging device 300 performs a charging operation on the first battery circuit 400, the second battery circuit 500, the third battery circuit 600, and the Nth battery circuit 700, the first battery circuit 400, the second battery circuit 500, and the third battery When the potential of the battery 200 of the circuit 600 reaches the reference voltage Vref 2.5V of the adjustable precision parallel connection regulator 13: the overvoltage protection device 100 in the first battery circuit 400, the second battery circuit 500 and the third battery circuit 600 at this time The collector D of the second semiconductor 32 is electrically connected to the source S, so that the shunt resistor 33 has a current to pass through to perform shunting to protect the battery 200 from being safe, and the battery 200 can be prevented from being damaged due to excessive voltage. For the purpose of voltage protection, the Nth battery circuit 700 continues to perform the charging operation.
5.當充電裝置300對第一電池電路400、第二電池電路500、第三電池電路600與第N電池電路700執行充電動作時，第一電池電路400、第二電池電路500、第三電池電路600與第N電池電路700的電池200電位達到可調整精密並接調整器13之參考電壓Vref 2.5V時：此時第一電池電路400、第二電池電路500、第三電池電路600與第N電池電路700中的過電壓保護裝置100的第二半導體32的集極D與源極S導通，因而分流電阻33有電流通過而執行分流作用，可以保護電池200安全，以避免電池200因其過高電壓造成損壞，而達到過高電壓保護之目的，而其充電電流變小，充電裝置300的充電任務完成；在實際的充電過程中其第一電池電路400、第二電池電路500、第三電池電路600與第N電池電路700執行充電動作時，其電位達到可調整精密並接調整器13之參考電壓Vref 2.5V之順序是不一定是依第一電池電路400、第二電池電路500、第三電池電路600與第N電池電路700的順序，在此特別聲明，但其動作原理相同。 5. When the charging device 300 performs a charging operation on the first battery circuit 400, the second battery circuit 500, the third battery circuit 600, and the Nth battery circuit 700, the first battery circuit 400, the second battery circuit 500, and the third battery When the potential of the battery 200 of the circuit 600 and the Nth battery circuit 700 reaches the reference voltage Vref 2.5V of the adjustable precision parallel connection regulator 13: the first battery circuit 400, the second battery circuit 500, the third battery circuit 600 and the first The collector D of the second semiconductor 32 of the overvoltage protection device 100 in the N battery circuit 700 is electrically connected to the source S, and thus the shunt resistor 33 has a current to pass through to perform a shunting function, thereby protecting the battery 200 from being safe, thereby avoiding the battery 200 Excessive voltage causes damage, and achieves the purpose of excessive voltage protection, and its charging current becomes small, and the charging task of the charging device 300 is completed; in the actual charging process, the first battery circuit 400, the second battery circuit 500, and the When the three-battery circuit 600 and the N-th battery circuit 700 perform a charging operation, the order in which the potential reaches the adjustable precision and the reference voltage Vref 2.5V of the regulator 13 is not necessarily in accordance with the first battery circuit 400. The order of the second battery circuit 500, the third battery circuit 600, and the Nth battery circuit 700 is specifically stated herein, but the operation principle is the same.
如圖4所示，為本發明過電壓保護裝置的第三實施例，自圖4可知，過電壓保護裝置100包括有：可調整精密並接調整器電路10、第一半導體電路20及第二半導體電路30；可調整精密並接調整器電路10包括有第一電阻11、第二電阻12與可調整精密並接調整器13，可調整精密並接調整器13之參考電壓端Vref連接第一電阻11的另一端與第二電阻12的一端串聯連接的中點端，第一電阻11的一端連接正電 端V+，第二電阻12的另一端連接負電端V-，可調整精密並接調整器13的陽極端A連接負電端V-，可調整精密並接調整器13的陰極端K連接到第一半導體23的基極B與基極電阻21的另一端；第一半導體電路20包括有第一半導體23、射極電阻22與基極電阻21，第一半導體23為PNP型電晶體，第一半導體23的基極B連接基極電阻21的另一端與可調整精密並接調整器13的陰極端K，基極電阻21的一端連接正電端V+，第一半導體23的射極E連接射極電阻22的另一端，射極電阻22的一端連接正電端V+，第一半導體23的受極C連接第二半導體32的閘極G與閘極電阻31的另一端；第二半導體電路30包括有第二半導體32、閘極電阻31與電容器34，第二半導體32為N通道金屬氧化半導體埸效電晶體，第二半導體32的閘極G連接第一半導體23的受極C與閘極電阻31的一端，閘極電阻31的另一端連接負電端V-，第二半導體32的集極D連接電容器34的另一端，電容器34的一端連接正電端V+，第二半導體32的源極S連接負電端V-。 As shown in FIG. 4, which is a third embodiment of the overvoltage protection device of the present invention, as shown in FIG. 4, the overvoltage protection device 100 includes an adjustable precision parallel connection regulator circuit 10, a first semiconductor circuit 20, and a second The semiconductor circuit 30; the adjustable precision parallel connection adjuster circuit 10 includes a first resistor 11, a second resistor 12 and an adjustable precision parallel connection adjuster 13, and the reference voltage terminal Vref of the precision parallel connection adjuster 13 is connected to the first The other end of the resistor 11 is connected to the midpoint end of the second resistor 12 in series, and one end of the first resistor 11 is connected to the positive terminal. The other end of the second resistor 12 is connected to the negative terminal V-, and the anode end A of the precision parallel connection adjuster 13 is connected to the negative terminal V-, and the cathode end K of the precision parallel connection adjuster 13 is connected to the first end. The base B of the semiconductor 23 and the other end of the base resistor 21; the first semiconductor circuit 20 includes a first semiconductor 23, an emitter resistor 22 and a base resistor 21, and the first semiconductor 23 is a PNP type transistor, the first semiconductor The other end of the base B connection base resistor 21 of the 23 is connected to the cathode end K of the adjustable precision parallel connection adjuster 13, one end of the base resistor 21 is connected to the positive terminal V+, and the emitter E of the first semiconductor 23 is connected to the emitter The other end of the resistor 22, one end of the emitter resistor 22 is connected to the positive terminal V+, the pole C of the first semiconductor 23 is connected to the gate G of the second semiconductor 32 and the other end of the gate resistor 31; the second semiconductor circuit 30 includes There is a second semiconductor 32, a gate resistor 31 and a capacitor 34, the second semiconductor 32 is an N-channel metal oxide semiconductor effect transistor, and the gate G of the second semiconductor 32 is connected to the receptor C and the gate resistor of the first semiconductor 23. One end of 31, the other end of the gate resistor 31 is connected to the negative terminal V-, the second half D collector body 32 is connected to the other end of the capacitor 34, one end of the capacitor 34 is connected to the positively charged end of V +, the source S of the second semiconductor electrode 32 is electrically connected to the negative terminal V-.
如圖4所示，其動作原理為： As shown in Figure 4, the principle of operation is:
1.當正電端V+的電壓由0V逐漸上升到小於可調整精密並接調整器13之參考電壓Vref 2.5V時：此時可調整精密並接調整器13之陽極端A與陰極端K開路，第一半導體23的基極B的正電位高於第一半導體23的射極E的正電位，因而第一半導體23開路，第一半導體23的受極C無電壓供給第二半導體32的閘極G，此時第二半導體32的集極D與源極S開路，因而電容器34無電流通過，此時本發明電路之正電端V+與負電端V-為開路狀態。 1. When the voltage of the positive terminal V+ gradually rises from 0V to less than the reference voltage Vref 2.5V of the adjustable precision parallel connection regulator 13: the anode terminal A and the cathode terminal K of the precision parallel connection regulator 13 can be adjusted at this time. The positive potential of the base B of the first semiconductor 23 is higher than the positive potential of the emitter E of the first semiconductor 23, and thus the first semiconductor 23 is open, and the gate C of the first semiconductor 23 is supplied with no voltage to the gate of the second semiconductor 32. At this time, the collector D and the source S of the second semiconductor 32 are open, and thus the capacitor 34 has no current flowing. At this time, the positive terminal V+ and the negative terminal V- of the circuit of the present invention are in an open state.
2.當正電端V+的電壓由0V逐漸上升到可調整精密並接調整器13之參考電壓Vref 2.5V時：此時可調整精密並接調整器13之陽極端A與陰極端K導通，第一半導體23的基極B的正電位低於第一半導體23的射極E的正電位，因而第一半導體23導通，第一半導體23的受極C供給電壓給第二半導體32的閘極G，此時第二半導體32的集極D與源極S導通，因而電容器34有充電電流通過而執行分流作用，以保護正電端V+與負電端V-之間的負載或電源，以避免負載或電源因其過高電壓造成損壞，而達到過高電壓保護之目的。 2. When the voltage of the positive terminal V+ gradually rises from 0V to the reference voltage Vref 2.5V of the adjustable precision parallel connection regulator 13, the anode end A and the cathode terminal K of the precision parallel connection regulator 13 can be adjusted to be turned on at this time. The positive potential of the base B of the first semiconductor 23 is lower than the positive potential of the emitter E of the first semiconductor 23, and thus the first semiconductor 23 is turned on, and the terminal C of the first semiconductor 23 supplies a voltage to the gate of the second semiconductor 32. G, at this time, the collector D of the second semiconductor 32 is turned on with the source S, so that the capacitor 34 has a charging current to pass through to perform a shunting action to protect the load or power between the positive terminal V+ and the negative terminal V- to avoid The load or power supply is damaged due to its excessive voltage, and the protection against excessive voltage is achieved.
3.當正電端V+的電壓由0V逐漸上升到可調整精密並接調整器13之參考電壓Vref 2.5V以上時：此時可調整精密並接調整器13之陽極端A與陰極端K導通，第一半導體23的基極B的正電位低於第一半導體23的射極E的正電位，因而第一半導體23導通，第一半導體23的受極C供給電壓給第二半導體32的閘極G，此時第二半導體32的集極D與源極S導通，因而電容器34有充電電流通過而執行分流作用，只是其經過電容器34的分流電流增加而己，只要選用的電容器34與第二半導體32適當，仍可以保護正電端V+與負電端V-之間的負載或電源，以避免負載或電源因其過高電壓造成損壞，而達到維持過高電壓保護之目的。 3. When the voltage of the positive terminal V+ gradually rises from 0V to the reference voltage Vref 2.5V of the adjustable precision parallel connection regulator 13: the anode end A and the cathode terminal K of the precision parallel connection regulator 13 can be adjusted at this time. The positive potential of the base B of the first semiconductor 23 is lower than the positive potential of the emitter E of the first semiconductor 23, and thus the first semiconductor 23 is turned on, and the terminal C of the first semiconductor 23 supplies a voltage to the gate of the second semiconductor 32. The pole G, at this time, the collector D of the second semiconductor 32 is electrically connected to the source S, so that the capacitor 34 has a charging current passing through to perform the shunting action, except that the shunt current through the capacitor 34 is increased, as long as the capacitor 34 and the capacitor are selected. The second semiconductor 32 is suitable to protect the load or power supply between the positive terminal V+ and the negative terminal V- to prevent the load or the power source from being damaged due to its excessive voltage, thereby maintaining the protection against excessive voltage.
由以上動作原理可知，圖4所示之第三實施例亦可應用於圖2所示之第一實施例與圖3所示之第二實施例，只是將圖2之第一實施例與圖3之第二實施例之過電壓保護裝置100中的分流電阻33改為電容器34而己，其分流電阻33與電容器34皆作為分流 功能之用，分流電阻33為消耗電能型，電容器34為儲蓄電能型兩者在設計時各取所需之外，其動作原理皆相同，而不贅述。 It can be seen from the above operation principle that the third embodiment shown in FIG. 4 can also be applied to the first embodiment shown in FIG. 2 and the second embodiment shown in FIG. 3, except that the first embodiment and the figure of FIG. 2 are used. The shunt resistor 33 in the overvoltage protection device 100 of the second embodiment of the third embodiment is changed to the capacitor 34, and the shunt resistor 33 and the capacitor 34 are both shunted. For the function, the shunt resistor 33 is a power consumption type, and the capacitor 34 is a saving electric energy type. The operation principle is the same except for the design, and the operation principle is the same.
如圖5所示，為本發明過電壓保護裝置的第四實施例，自圖5可知，為在圖1過電壓保護裝置100的正電端V+與負電端V-之間連接電池200與第三半導體電路40，並且並聯連於充電裝置300而構成一個電池200充電電路，其充電裝置300具備有定電壓與定電流之充電功能特徵；過電壓保護裝置100包括有：可調整精密並接調整器電路10、第一半導體電路20、第二半導體電路30與第三半導體電路40；可調整精密並接調整器電路10包括有第一電阻11、第二電阻12與可調整精密並接調整器13，可調整精密並接調整器13之參考電壓端Vref連接第一電阻11的另一端與第二電阻12的一端串聯連接的中點端，第一電阻11的一端連接正電端V+，第二電阻12的另一端連接負電端V-，可調整精密並接調整器13的陽極端A連接負電端V-，可調整精密並接調整器13的陰極端K連接到第一半導體23的基極B與基極電阻21的另一端；第一半導體電路20包括有第一半導體23、射極電阻22與基極電阻21，第一半導體23為PNP型電晶體，第一半導體23的基極B連接基極電阻21的另一端與可調整精密並接調整器13的陰極端K，基極電阻21的一端連接正電端V+，第一半導體23的射極E連接射極電阻22的另一端，射極電阻22的一端連接正電端V+，第一半導體23的受極C連接第二半導體32的閘極G與閘極電阻31的另一端；第二半導體電路30包括有第二半導體32、閘極電阻31與分流電阻33，第二半導體32為N通 道金屬氧化半導體埸效電晶體，第二半導體32的閘極G連接第一半導體23的受極C與閘極電阻31的一端，閘極電阻31的另一端連接負電端V-，第二半導體32的集極D連接分流電阻33的另一端與第三半導體41的閘極G，分流電阻33的一端連接正電端V+，第二半導體32的源極S連接負電端V-；第三半導體電路40包括有第三半導體41與閘極電阻42，第三半導體41為N通道金屬氧化半導體埸效電晶體，第三半導體41的閘極G連接第二半導體32的集極D與閘極電阻42的一端，閘極電阻42的另一端連接負電端V-，第三半導體41的集極D連接電池200的負電端，電池200的正電端連接正電端V+，第三半導體41的源極S連接負電端V-；圖5所示之電池200並不是只代表一個電池，亦可以代表多個電池200串並聯連接，因其動作原理相同，而不自己限制其電池200的數量與電池200的串並聯連接。 As shown in FIG. 5, in the fourth embodiment of the overvoltage protection device of the present invention, as shown in FIG. 5, the battery 200 and the battery are connected between the positive terminal V+ and the negative terminal V- of the overvoltage protection device 100 of FIG. The semiconductor circuit 40 is connected in parallel to the charging device 300 to form a battery 200 charging circuit. The charging device 300 is provided with a charging function having a constant voltage and a constant current. The overvoltage protection device 100 includes: an adjustable precision parallel connection adjustment. The circuit 10, the first semiconductor circuit 20, the second semiconductor circuit 30 and the third semiconductor circuit 40; the adjustable precision parallel connection adjuster circuit 10 includes a first resistor 11, a second resistor 12 and an adjustable precision parallel regulator 13. The reference voltage terminal Vref of the adjustable precision parallel connection regulator 13 is connected to the midpoint end of the first resistor 11 and the other end of the second resistor 12 connected in series. One end of the first resistor 11 is connected to the positive terminal V+. The other end of the two resistors 12 is connected to the negative terminal V-, and the anode end A of the precision parallel connection adjuster 13 is connected to the negative terminal V-, and the cathode end K of the precision parallel connection adjuster 13 is connected to the base of the first semiconductor 23. Pole B and base The other end of 21; the first semiconductor circuit 20 includes a first semiconductor 23, an emitter resistor 22 and a base resistor 21, the first semiconductor 23 is a PNP type transistor, and the base B of the first semiconductor 23 is connected to the base resistor 21 The other end is connected to the cathode end K of the adjustable precision parallel connection regulator 13. One end of the base resistor 21 is connected to the positive terminal V+, and the emitter E of the first semiconductor 23 is connected to the other end of the emitter resistor 22. The emitter resistor 22 One end of the first semiconductor 23 is connected to the gate G of the second semiconductor 32 and the other end of the gate resistor 31. The second semiconductor circuit 30 includes a second semiconductor 32 and a gate resistor 31. And the shunt resistor 33, the second semiconductor 32 is N-pass The gate metal G of the second semiconductor 32 is connected to the terminal C of the first semiconductor 23 and one end of the gate resistor 31, and the other end of the gate resistor 31 is connected to the negative terminal V-, the second semiconductor The other end of the collector D connection shunt resistor 33 of 32 is connected to the gate G of the third semiconductor 41, one end of the shunt resistor 33 is connected to the positive terminal V+, and the source S of the second semiconductor 32 is connected to the negative terminal V-; the third semiconductor The circuit 40 includes a third semiconductor 41 and a gate resistor 42. The third semiconductor 41 is an N-channel metal oxide semiconductor transistor. The gate G of the third semiconductor 41 is connected to the collector D and the gate resistor of the second semiconductor 32. At one end of the 42th, the other end of the gate resistor 42 is connected to the negative terminal V-, the collector D of the third semiconductor 41 is connected to the negative terminal of the battery 200, and the positive terminal of the battery 200 is connected to the positive terminal V+, the source of the third semiconductor 41. The pole S is connected to the negative terminal V-; the battery 200 shown in FIG. 5 does not only represent one battery, but may also represent a plurality of batteries 200 connected in series and in parallel, because the operation principle is the same, and the number of the battery 200 and the battery are not limited by themselves. 200 series and parallel connection.
如圖5所示，其動作原理為： As shown in Figure 5, the principle of operation is:
1.當正電端V+的電壓由0V逐漸上升到小於可調整精密並接調整器13之參考電壓Vref 2.5V時：此時可調整精密並接調整器13之陽極端A與陰極端K開路，第一半導體23的基極B的正電位高於第一半導體23的射極E的正電位，因而第一半導體23開路，第一半導體23的受極C無電壓供給第二半導體32的閘極G，此時第二半導體32的集極D與源極S開路，因而分流電阻33無電流通過，此時分流電阻33之另一端供應正電壓於第三半導體41的閘極G，於是第三半導體41的集極D與源極S導通，電池200由充電裝置300執行充電動作。 1. When the voltage of the positive terminal V+ gradually rises from 0V to less than the reference voltage Vref 2.5V of the adjustable precision parallel connection regulator 13: the anode terminal A and the cathode terminal K of the precision parallel connection regulator 13 can be adjusted at this time. The positive potential of the base B of the first semiconductor 23 is higher than the positive potential of the emitter E of the first semiconductor 23, and thus the first semiconductor 23 is open, and the gate C of the first semiconductor 23 is supplied with no voltage to the gate of the second semiconductor 32. The pole G, at this time, the collector D of the second semiconductor 32 and the source S are open, so that the shunt resistor 33 has no current, and at this time, the other end of the shunt resistor 33 supplies a positive voltage to the gate G of the third semiconductor 41, thus The collector D of the three semiconductors 41 is electrically connected to the source S, and the battery 200 is charged by the charging device 300.
2.當正電端V+的電壓由0V逐漸上升到可調整精密並 接調整器13之參考電壓Vref 2.5V時：此時可調整精密並接調整器13之陽極端A與陰極端K導通，第一半導體23的基極B的正電位低於第一半導體23的射極E的正電位，因而第一半導體23導通，第一半導體23的受極C供給電壓給第二半導體32的閘極G，此時第二半導體32的集極D與源極S導通，而分流電阻33有電流通過而執行分流作用，因第二半導體32的集極D與源極S導通，此時分流電阻33之另一端無正電壓供應第三半導體41的閘極G，於是第三半導體41的集極D與源極S開路，充電裝置300對電池200不執行充電動作，以避免電池200因其過高電壓造成損壞，而達到過高電壓保護之目的。 2. When the voltage of the positive terminal V+ gradually rises from 0V to adjustable precision and When the reference voltage Vref of the regulator 13 is 2.5 V: the anode end A and the cathode end K of the precision parallel connection adjuster 13 are turned on at this time, and the positive potential of the base B of the first semiconductor 23 is lower than that of the first semiconductor 23 The positive potential of the emitter E is such that the first semiconductor 23 is turned on, and the terminal C of the first semiconductor 23 supplies a voltage to the gate G of the second semiconductor 32. At this time, the collector D of the second semiconductor 32 is electrically connected to the source S. The shunt resistor 33 has a current passing through to perform a shunting operation, because the collector D of the second semiconductor 32 is turned on and the source S is turned on. At this time, the other end of the shunt resistor 33 has no positive voltage to supply the gate G of the third semiconductor 41, so that The collector D of the three semiconductors 41 and the source S are open, and the charging device 300 does not perform a charging operation on the battery 200 to prevent the battery 200 from being damaged due to its excessive voltage, thereby achieving the purpose of excessive voltage protection.
3.當正電端V+的電壓由0V逐漸上升到可調整精密並接調整器13之參考電壓Vref 2.5V以上時：此時可調整精密並接調整器13之陽極端A與陰極端K導通，第一半導體23的基極B的正電位低於第一半導體23的射極E的正電位，因而第一半導體23導通，第一半導體23的受極C供給電壓給第二半導體32的閘極G，此時第二半導體32的集極D與源極S導通，因而分流電阻33有電流通過而執行分流作用，只是其經過分流電阻33的分流電流增加而己，因第二半導體32的集極D與源極S導通，此時分流電阻33之另一端無正電壓供應第三半導體41的閘極G，於是第三半導體41的集極D與源極S開路，充電裝置300對電池200仍繼續不執行充電動作，以避免電池200因其過高電壓造成損壞，而達到過高電壓保護之目的。 3. When the voltage of the positive terminal V+ gradually rises from 0V to the reference voltage Vref 2.5V of the adjustable precision parallel connection regulator 13: the anode end A and the cathode terminal K of the precision parallel connection regulator 13 can be adjusted at this time. The positive potential of the base B of the first semiconductor 23 is lower than the positive potential of the emitter E of the first semiconductor 23, and thus the first semiconductor 23 is turned on, and the terminal C of the first semiconductor 23 supplies a voltage to the gate of the second semiconductor 32. The pole G, at this time, the collector D of the second semiconductor 32 is electrically connected to the source S, so that the shunt resistor 33 has a current passing through to perform the shunting action, except that the shunt current passing through the shunt resistor 33 is increased due to the second semiconductor 32. The collector D and the source S are turned on. At this time, the other end of the shunt resistor 33 has no positive voltage to supply the gate G of the third semiconductor 41, so that the collector D and the source S of the third semiconductor 41 are open, and the charging device 300 is connected to the battery. The 200 still continues to perform the charging action to prevent the battery 200 from being damaged due to its excessive voltage, thereby achieving the purpose of excessive voltage protection.
如圖6所示，為本發明過電壓保護裝置的第五實施 例，自圖6可知，為在圖1過電壓保護裝置100的正電端V+與負電端V-之間連接負載50與第三半導體電路40，並且並聯連於直流電源供應器60而構成一個實施電路；過電壓保護裝置100包括有：可調整精密並接調整器電路10、第一半導體電路20、第二半導體電路30與第三半導體電路40；可調整精密並接調整器電路10包括有第一電阻11、第二電阻12與可調整精密並接調整器13，可調整精密並接調整器13之參考電壓端Vref連接第一電阻11的另一端與第二電阻12的一端串聯連接的中點端，第一電阻11的一端連接正電端V+，第二電阻12的另一端連接負電端V-，可調整精密並接調整器13的陽極端A連接負電端V-，可調整精密並接調整器13的陰極端K(Cathode,K)連接到第一半導體23的基極B與基極電阻21的另一端；第一半導體電路20包括有第一半導體23、射極電阻22與基極電阻21，第一半導體23為PNP型電晶體，第一半導體23的基極B連接基極電阻21的另一端與可調整精密並接調整器13的陰極端K，基極電阻21的一端連接正電端V+，第一半導體23的射極E連接射極電阻22的另一端，射極電阻22的一端連接正電端V+，第一半導體23的受極C連接第二半導體32的閘極G與閘極電阻31的另一端；第二半導體電路30包括有第二半導體32、閘極電阻31與分流電阻33，第二半導體32為N通道金屬氧化半導體埸效電晶體，第二半導體32的閘極G連接第一半導體23的受極C與閘極電阻31的一端，閘極電阻31的另一端連接負電端V-，第二半導體32的集極D連接分流電阻33的另一端與第三半導體41的閘極G，分流電阻33的一端連接 正電端V+，第二半導體32的源極S連接負電端V-；第三半導體電路40包括有第三半導體41與閘極電阻42，第三半導體41為N通道金屬氧化半導體埸效電晶體，第三半導體41的閘極G連接第二半導體32的集極D與閘極電阻42的一端，閘極電阻42的另一端連接負電端V-，第三半導體41的集極D連接負載50的另一端，負載50的一端連接正電端V+，第三半導體41的源極S連接負電端V-。 As shown in FIG. 6, the fifth implementation of the overvoltage protection device of the present invention For example, as shown in FIG. 6, the load 50 and the third semiconductor circuit 40 are connected between the positive terminal V+ and the negative terminal V- of the overvoltage protection device 100 of FIG. 1, and are connected in parallel to the DC power supply 60 to form a Implementing a circuit; the overvoltage protection device 100 includes: an adjustable precision parallel connection regulator circuit 10, a first semiconductor circuit 20, a second semiconductor circuit 30, and a third semiconductor circuit 40; the adjustable precision parallel connection regulator circuit 10 includes The first resistor 11 and the second resistor 12 are connected to the adjustable precision parallel connection regulator 13. The reference voltage terminal Vref of the precision parallel connection adjuster 13 is connected to the other end of the first resistor 11 and connected to one end of the second resistor 12 in series. At the midpoint end, one end of the first resistor 11 is connected to the positive terminal V+, and the other end of the second resistor 12 is connected to the negative terminal V-, and the anode terminal A of the precision parallel connection adjuster 13 is connected to the negative terminal V-, and the precision can be adjusted. The cathode terminal K (Cathode, K) of the parallel regulator 13 is connected to the base B of the first semiconductor 23 and the other end of the base resistor 21; the first semiconductor circuit 20 includes a first semiconductor 23, an emitter resistor 22 and Base resistance 21, first semiconductor 23 is PN P-type transistor, the other end of the base B of the first semiconductor 23 is connected to the cathode end of the adjustable parallel connection adjuster 13, and the other end of the base resistor 21 is connected to the positive terminal V+, the first semiconductor The emitter E of 23 is connected to the other end of the emitter resistor 22, one end of the emitter resistor 22 is connected to the positive terminal V+, and the pole C of the first semiconductor 23 is connected to the gate G of the second semiconductor 32 and the gate resistor 31. The second semiconductor circuit 30 includes a second semiconductor 32, a gate resistor 31 and a shunt resistor 33, the second semiconductor 32 is an N-channel metal oxide semiconductor transistor, and the gate G of the second semiconductor 32 is connected to the first semiconductor. The terminal C of 23 and one end of the gate resistor 31, the other end of the gate resistor 31 is connected to the negative terminal V-, and the collector D of the second semiconductor 32 is connected to the other end of the shunt resistor 33 and the gate G of the third semiconductor 41. One end of the shunt resistor 33 is connected The positive terminal V+, the source S of the second semiconductor 32 is connected to the negative terminal V-; the third semiconductor circuit 40 includes a third semiconductor 41 and a gate resistor 42, and the third semiconductor 41 is an N-channel metal oxide semiconductor transistor The gate G of the third semiconductor 41 is connected to the collector D of the second semiconductor 32 and one end of the gate resistor 42. The other end of the gate resistor 42 is connected to the negative terminal V-, and the collector D of the third semiconductor 41 is connected to the load 50. At the other end, one end of the load 50 is connected to the positive terminal V+, and the source S of the third semiconductor 41 is connected to the negative terminal V-.
如圖6所示，其動作原理為： As shown in Figure 6, the principle of operation is:
1.當正電端V+的電壓由0V逐漸上升到小於可調整精密並接調整器13之參考電壓Vref 2.5V時：此時可調整精密並接調整器13之陽極端A與陰極端K開路，第一半導體23的基極B的正電位高於第一半導體23的射極E的正電位，因而第一半導體23開路，第一半導體23的受極C無電壓供給第二半導體32的閘極G，此時第二半導體32的集極D與源極S開路，因而分流電阻33無電流通過，此時分流電阻33之另一端供應正電壓於第三半導體41的閘極G，於是第三半導體41的集極D與源極S導通，負載50由直流電源供應器60供電。 1. When the voltage of the positive terminal V+ gradually rises from 0V to less than the reference voltage Vref 2.5V of the adjustable precision parallel connection regulator 13: the anode terminal A and the cathode terminal K of the precision parallel connection regulator 13 can be adjusted at this time. The positive potential of the base B of the first semiconductor 23 is higher than the positive potential of the emitter E of the first semiconductor 23, and thus the first semiconductor 23 is open, and the gate C of the first semiconductor 23 is supplied with no voltage to the gate of the second semiconductor 32. The pole G, at this time, the collector D of the second semiconductor 32 and the source S are open, so that the shunt resistor 33 has no current, and at this time, the other end of the shunt resistor 33 supplies a positive voltage to the gate G of the third semiconductor 41, thus The collector D of the triple semiconductor 41 is turned on with the source S, and the load 50 is powered by the DC power supply 60.
2.當正電端V+的電壓由0V逐漸上升到可調整精密並接調整器13之參考電壓Vref 2.5V時：此時可調整精密並接調整器13之陽極端A與陰極端K導通，第一半導體23的基極B的正電位低於第一半導體23的射極E的正電位，因而第一半導體23導通，第一半導體23的受極C供給電壓給第二半導體32的閘極G，此時第二半導體32的集極D與源極S導通，而分流電阻33有電流通過而執行分流作用，因第二半導體32的集極D與源極S導通，此時 分流電阻33之另一端無正電壓供應第三半導體41的閘極G，於是第三半導體41的集極D與源極S開路，此時直流電源供應器60不供電於負載50，以避免負載50因其過高電壓造成損壞，而達到過高電壓保護之目的。 2. When the voltage of the positive terminal V+ gradually rises from 0V to the reference voltage Vref 2.5V of the adjustable precision parallel connection regulator 13, the anode end A and the cathode terminal K of the precision parallel connection regulator 13 can be adjusted to be turned on at this time. The positive potential of the base B of the first semiconductor 23 is lower than the positive potential of the emitter E of the first semiconductor 23, and thus the first semiconductor 23 is turned on, and the terminal C of the first semiconductor 23 supplies a voltage to the gate of the second semiconductor 32. G, at this time, the collector D of the second semiconductor 32 is turned on and the source S is turned on, and the shunt resistor 33 has a current passing to perform the shunting action, because the collector D of the second semiconductor 32 is turned on and the source S is turned on. The other end of the shunt resistor 33 is supplied with no positive voltage to the gate G of the third semiconductor 41, so that the collector D and the source S of the third semiconductor 41 are open, and the DC power supply 60 is not supplied with the load 50 to avoid the load. 50 is damaged due to its excessive voltage, and achieves the purpose of excessive voltage protection.
3.當正電端V+的電壓由0V逐漸上升到可調整精密並接調整器13之參考電壓Vref 2.5V以上時：此時可調整精密並接調整器13之陽極端A與陰極端K導通，第一半導體23的基極B的正電位低於第一半導體23的射極E的正電位，因而第一半導體23導通，第一半導體23的受極C供給電壓給第二半導體32的閘極G，此時第二半導體32的集極D與源極S導通，因而分流電阻33有電流通過而執行分流作用，只是其經過分流電阻33的分流電流增加而己，因第二半導體32的集極D與源極S導通，此時分流電阻33之另一端無正電壓供應第三半導體41的閘極G，於是第三半導體41的集極D與源極S開路，此時直流電源供應器60繼續不供電於負載50，以避免負載50因其過高電壓造成損壞，而達到過高電壓保護之目的。 3. When the voltage of the positive terminal V+ gradually rises from 0V to the reference voltage Vref 2.5V of the adjustable precision parallel connection regulator 13: the anode end A and the cathode terminal K of the precision parallel connection regulator 13 can be adjusted at this time. The positive potential of the base B of the first semiconductor 23 is lower than the positive potential of the emitter E of the first semiconductor 23, and thus the first semiconductor 23 is turned on, and the terminal C of the first semiconductor 23 supplies a voltage to the gate of the second semiconductor 32. The pole G, at this time, the collector D of the second semiconductor 32 is electrically connected to the source S, so that the shunt resistor 33 has a current passing through to perform the shunting action, except that the shunt current passing through the shunt resistor 33 is increased due to the second semiconductor 32. The collector D and the source S are turned on. At this time, the other end of the shunt resistor 33 is supplied with the positive voltage of the third semiconductor 41, so that the collector D and the source S of the third semiconductor 41 are open, and the DC power supply is supplied at this time. The device 60 continues to be unpowered to the load 50 to avoid damage to the load 50 due to its excessive voltage and to achieve excessive voltage protection.
由本發明過電壓保護裝置的第五實施例可知，皆為保護負載與電源，若負載不作保護除了損壞負載外其直流電源亦然會損壞，以此理推論本發明應具有保護負載與電源之功能；以上之實施例也足證明本發明能據予實施。 According to the fifth embodiment of the overvoltage protection device of the present invention, both the protection load and the power supply are protected. If the load is not protected, the DC power supply may be damaged in addition to damaging the load, so that the present invention should have the function of protecting the load and the power supply. The above examples also demonstrate that the invention can be implemented.
以上所述實施例僅是為充分說明本發明所舉的較佳的實施例，本發明的保護範圍不限於此。本技術領域的技術人員，在本發明基礎上所作的等同替代或變換，皆在本發明的保護範圍內。本發明的保護範圍 以申請專利範圍書為準。 The above-described embodiments are merely illustrative of the preferred embodiments of the present invention, and the scope of the present invention is not limited thereto. Equivalent substitutions or alterations made by those skilled in the art based on the present invention are within the scope of the present invention. The scope of protection of the present invention The scope of application for patents shall prevail.
10‧‧‧可調整精密並接調整器電路 10‧‧‧Adjustable precision parallel connection regulator circuit
11‧‧‧第一電阻 11‧‧‧First resistance
12‧‧‧第二電阻 12‧‧‧second resistance
13‧‧‧可調整精密並接調整器 13‧‧‧Adjustable precision parallel adjuster
A‧‧‧可調整精密並接調整器的陽極端 A‧‧‧Adjustable anode side of precision parallel regulator
K‧‧‧可調整精密並接調整器的陰極端 K‧‧‧Adjustable cathode side of precision parallel regulator
Vref‧‧‧可調整精密並接調整器的參考電壓端 Vref‧‧‧ can adjust the reference voltage terminal of the precision parallel connection regulator
20‧‧‧第一半導體電路 20‧‧‧First semiconductor circuit
21‧‧‧基極電阻 21‧‧‧base resistance
22‧‧‧射極電阻 22‧‧‧ emitter resistance
23‧‧‧第一半導體 23‧‧‧First Semiconductor
C‧‧‧第一半導體的受極 C‧‧‧The first semiconductor's receptor
B‧‧‧第一半導體的基極 B‧‧‧ the base of the first semiconductor
E‧‧‧第一半導體的射極 E‧‧‧ the emitter of the first semiconductor
30‧‧‧第二半導體電路 30‧‧‧Second semiconductor circuit
31‧‧‧閘極電阻 31‧‧‧gate resistance
32‧‧‧第二半導體 32‧‧‧Second Semiconductor
33‧‧‧分流電阻 33‧‧‧Shunt resistor
D‧‧‧第二半導體的集極 D‧‧‧The collector of the second semiconductor
S‧‧‧第二半導體的源極 S‧‧‧The source of the second semiconductor
G‧‧‧第二半導體的閘極 G‧‧‧The gate of the second semiconductor
100‧‧‧過電壓保護裝置 100‧‧‧Overvoltage protection device
V+‧‧‧正電端 V+‧‧‧ positive terminal
V-‧‧‧負電端 V-‧‧‧ negative terminal
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| TW104143262A TW201724680A (en) | 2015-12-23 | 2015-12-23 | Over voltage protection device |
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| TW104143262A TW201724680A (en) | 2015-12-23 | 2015-12-23 | Over voltage protection device |
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| TWI654811B (en) | 2018-01-12 | 2019-03-21 | 安雷科技股份有限公司 | Protection circuit and protection module for direct current power |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI654811B (en) | 2018-01-12 | 2019-03-21 | 安雷科技股份有限公司 | Protection circuit and protection module for direct current power |
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