TW201715311A - 感放射線性樹脂組成物及抗蝕劑圖案形成方法 - Google Patents
感放射線性樹脂組成物及抗蝕劑圖案形成方法 Download PDFInfo
- Publication number
- TW201715311A TW201715311A TW105131133A TW105131133A TW201715311A TW 201715311 A TW201715311 A TW 201715311A TW 105131133 A TW105131133 A TW 105131133A TW 105131133 A TW105131133 A TW 105131133A TW 201715311 A TW201715311 A TW 201715311A
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- structural unit
- formula
- carbon atoms
- resin composition
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1804—C4-(meth)acrylate, e.g. butyl (meth)acrylate, isobutyl (meth)acrylate or tert-butyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1806—C6-(meth)acrylate, e.g. (cyclo)hexyl (meth)acrylate or phenyl (meth)acrylate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015192349 | 2015-09-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201715311A true TW201715311A (zh) | 2017-05-01 |
Family
ID=58427652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105131133A TW201715311A (zh) | 2015-09-29 | 2016-09-28 | 感放射線性樹脂組成物及抗蝕劑圖案形成方法 |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW201715311A (fr) |
WO (1) | WO2017057203A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102208103B1 (ko) * | 2016-10-31 | 2021-01-27 | 후지필름 가부시키가이샤 | 수지의 제조 방법, 및 감활성광선성 또는 감방사선성 조성물의 제조 방법 |
JP7493438B2 (ja) | 2020-12-09 | 2024-05-31 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1229390A4 (fr) * | 2000-06-22 | 2004-06-02 | Toray Industries | Composition radiosensible positive et procede de production de structures au moyen de celle-ci |
JP2002156761A (ja) * | 2000-11-20 | 2002-05-31 | Toray Ind Inc | ポジ型感放射線性組成物およびこれを用いたレジストパターンの製造方法 |
JP2004029437A (ja) * | 2002-06-26 | 2004-01-29 | Toray Ind Inc | ポジ型感放射線性組成物 |
JP2006030232A (ja) * | 2004-07-12 | 2006-02-02 | Fuji Photo Film Co Ltd | 感光性組成物及びそれを用いたパターン形成方法 |
JP6115377B2 (ja) * | 2013-07-24 | 2017-04-19 | Jsr株式会社 | 樹脂組成物及びレジストパターン形成方法 |
JP6327036B2 (ja) * | 2013-07-24 | 2018-05-23 | Jsr株式会社 | 感放射線性樹脂組成物、レジストパターン形成方法、重合体、化合物及び化合物の製造方法 |
JP6036619B2 (ja) * | 2013-09-13 | 2016-11-30 | Jsr株式会社 | 樹脂組成物及びレジストパターン形成方法 |
JP6492515B2 (ja) * | 2013-10-25 | 2019-04-03 | Jsr株式会社 | 感放射線性樹脂組成物、レジストパターン形成方法、重合体、化合物及びその製造方法 |
-
2016
- 2016-09-23 WO PCT/JP2016/078130 patent/WO2017057203A1/fr active Application Filing
- 2016-09-28 TW TW105131133A patent/TW201715311A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2017057203A1 (fr) | 2017-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI575313B (zh) | A photoresist composition, a photoresist pattern forming method, an acid diffusion controlling agent and a compound | |
US9874816B2 (en) | Radiation-sensitive resin composition and resist pattern-forming method | |
JP6052283B2 (ja) | フォトレジスト組成物 | |
JP6304246B2 (ja) | 感放射線性樹脂組成物及びレジストパターン形成方法 | |
JP6569221B2 (ja) | 感放射線性樹脂組成物、レジストパターン形成方法、感放射線性酸発生剤及び化合物 | |
JPWO2018070327A1 (ja) | 感放射線性樹脂組成物及びレジストパターン形成方法 | |
JP6319001B2 (ja) | 感放射線性樹脂組成物及びレジストパターン形成方法 | |
JP6152804B2 (ja) | 感放射線性樹脂組成物、レジストパターン形成方法、重合体及び化合物 | |
US20130260315A1 (en) | Radiation-sensitive resin composition, pattern-forming method, polymer, and compound | |
JP6146329B2 (ja) | 感放射線性樹脂組成物、レジストパターン形成方法、感放射線性酸発生剤及び化合物 | |
JP6171774B2 (ja) | 感放射線性樹脂組成物、レジストパターン形成方法及び感放射線性酸発生剤 | |
JP6273689B2 (ja) | 感放射線性樹脂組成物、レジストパターン形成方法、重合体、化合物及びその製造方法 | |
JP6241303B2 (ja) | 感放射線性樹脂組成物、レジストパターン形成方法、感放射線性酸発生剤及び化合物 | |
TW201715311A (zh) | 感放射線性樹脂組成物及抗蝕劑圖案形成方法 | |
JP6485298B2 (ja) | 感放射線性樹脂組成物及びレジストパターン形成方法 | |
JP6191684B2 (ja) | 感放射線性樹脂組成物、レジストパターン形成方法及び重合体 | |
JP6131793B2 (ja) | 感放射線性樹脂組成物、レジストパターン形成方法、重合体及び化合物 | |
JP6079360B2 (ja) | 酸拡散制御剤、フォトレジスト組成物、レジストパターン形成方法、化合物及び化合物の製造方法 | |
JP2017181696A (ja) | 感放射線性樹脂組成物及びレジストパターン形成方法 | |
JP5673038B2 (ja) | 感放射線性樹脂組成物及びこれを用いたパターン形成方法 | |
JP5573730B2 (ja) | 感放射線性樹脂組成物及びこれを用いたパターン形成方法 | |
JP6146328B2 (ja) | 感放射線性樹脂組成物、レジストパターン形成方法、感放射線性酸発生体及び化合物 | |
JP2016224123A (ja) | 感放射線性樹脂組成物及びレジストパターン形成方法 |