TW201639182A - Solar cell unit, solar cell module, method for manufacturing the solar cell, and method for manufacturing the solar cell module - Google Patents
Solar cell unit, solar cell module, method for manufacturing the solar cell, and method for manufacturing the solar cell module Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 10
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- 238000007639 printing Methods 0.000 claims description 50
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- 238000007650 screen-printing Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000005476 soldering Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 description 54
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 54
- 239000013078 crystal Substances 0.000 description 51
- 239000007772 electrode material Substances 0.000 description 19
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
Description
本發明係關於一種藉由網版(screen)印刷形成電極之太陽電池單元(cell)、太陽電池模組(module)、太陽電池單元之製造方法、及太陽電池模組之製造方法。 The present invention relates to a solar cell in which an electrode is formed by screen printing, a solar cell module, a method of manufacturing a solar cell, and a method of manufacturing a solar cell module.
太陽電池單元所產生的電力,係藉由柵(grid)電極集電,再匯集到與柵電極連接之匯流(bus)電極。另外,將連接引線(tab)焊接到匯流電極上,可使太陽電池單元彼此間串聯連接,取得更大的電力。在此,一併印刷形成柵電極及匯流電極時,柵電極與匯流電極的材料會成為同種的電極材料。另一方面,分別印刷形成柵電極及匯流電極,可在柵電極與匯流電極的電極材料採用不同種的電極材料。藉此,用以有效率地收集太陽電池單元內所產生的電力之電極材料的選擇項變多,而且可降低電極材料之成本。 The power generated by the solar cells is collected by a grid electrode and collected by a bus electrode connected to the gate electrode. In addition, by soldering the connection tabs to the bus electrodes, the solar cells can be connected in series to each other to obtain more power. Here, when the gate electrode and the bus electrode are collectively printed, the material of the gate electrode and the bus electrode becomes the same kind of electrode material. On the other hand, the gate electrode and the bus electrode are separately formed by printing, and different kinds of electrode materials can be used for the electrode materials of the gate electrode and the bus electrode. Thereby, there are many options for efficiently collecting the electrode material generated in the solar cell, and the cost of the electrode material can be reduced.
然而,分別印刷形成柵電極及匯流電極時,為了收集在太陽電池單元內所產生的電力,為了電性連接柵電極與匯流電極,必須使柵電極與匯流電極重疊。因此,在柵電極與匯流電極的重疊部的周邊之匯流電極的表面會形成凹凸部。而且,為了使複數片太陽電池單元串聯連接,而將連接引線焊接到各太陽電池單元時,只將連接引線焊接接合到凹凸部的凸部。因此,有如下之問題:無法得到使匯流電極與連接引線穩定連接之焊接合積,而使匯流電極與連接引線之間的電阻增大,致產生電力損耗。 However, when the gate electrode and the bus electrode are separately printed, in order to collect the electric power generated in the solar cell, it is necessary to overlap the gate electrode and the bus electrode in order to electrically connect the gate electrode and the bus electrode. Therefore, uneven portions are formed on the surface of the bus electrode around the overlapping portion of the gate electrode and the bus electrode. Further, in order to connect the plurality of solar battery cells in series to solder the connection leads to the respective solar battery cells, only the connection leads are welded and joined to the convex portions of the uneven portions. Therefore, there is a problem that the welding of the bus electrode and the connecting lead is not stably obtained, and the electric resistance between the bus electrode and the connecting lead is increased, resulting in power loss.
專利文獻1中係為了降低太陽電池的製造費用,並改善太陽電池的效率,使電極形成為積層構造而分別使用電極材料。而且,以分別印刷形成第1集電部及第2集電部時,使各別之集電部的側面彼此間相連接。 In Patent Document 1, in order to reduce the manufacturing cost of the solar cell and improve the efficiency of the solar cell, the electrode is formed into a laminated structure, and an electrode material is used. Further, when the first collecting portion and the second collecting portion are separately formed by printing, the side faces of the respective collecting portions are connected to each other.
(專利文獻1)日本特開2012-4571號公報 (Patent Document 1) Japanese Patent Laid-Open Publication No. 2012-4571
然而,若根據上述專利文獻1之技術,存在有印刷的位置精度、印刷的尺寸精度、印刷遮罩(mask)的尺寸精度等之第1集電部及第2集電部的形成位置的變動因素。因此,若不設置第1集電部及第2集電部的重疊部,難以形成兩者的連接。繼而,產生第1集電部及第2集電 部的重疊部時,電極表面就會產生凹凸,在太陽電池的模組化中,將連接引線焊接合時,無法得到穩定的焊接合積,而造成電力損耗。 However, according to the technique of Patent Document 1, there are variations in the position of the first power collecting portion and the second power collecting portion, such as the positional accuracy of printing, the dimensional accuracy of printing, and the dimensional accuracy of a print mask. factor. Therefore, if the overlapping portion between the first power collecting portion and the second power collecting portion is not provided, it is difficult to form a connection between the two. Then, the first collector and the second collector are generated. When the overlapping portion of the portion is formed, unevenness is generated on the surface of the electrode. When the connecting wire is welded in the modularization of the solar cell, stable welding is not obtained, and power loss is caused.
本發明係鑑於上述的課題而完成者,其目的在於得到可減低集電時的電力損耗之太陽電池單元。 The present invention has been made in view of the above problems, and an object thereof is to provide a solar battery cell capable of reducing power loss at the time of current collection.
為了解決上述課題,達成本發明的目的,本發明係在具有pn接合之半導體基板的一面上,具備電極,該電極係包括:在前述半導體基板的面方向中的第1方向伸長配置之細長形狀的柵電極、及在與前述第1方向交叉之第2方向伸長且寬度比前述柵電極更寬之匯流電極;且前述匯流電極係具有從前述第2方向之側面在前述第1方向往內側凹入之缺口部,前述柵電極之前述匯流電極側的端部係以不與前述匯流電極重疊之狀態收納在前述缺口部內。 In order to achieve the object of the present invention, an object of the present invention is to provide an electrode having a pn-bonded semiconductor substrate on one surface thereof, the electrode including an elongated shape in which a first direction is elongated in a surface direction of the semiconductor substrate. a gate electrode and a bus electrode extending in a second direction intersecting the first direction and having a width wider than the gate electrode; and the bus electrode having a side surface extending from the side in the second direction toward the inside in the first direction In the notch portion, the end portion of the gate electrode on the side of the bus electrode is housed in the notch portion without being overlapped with the bus electrode.
根據本發明,產生可得到可降減集電時的電力損耗之太陽電池單元之效果。 According to the present invention, an effect is obtained in which a solar battery unit capable of reducing power loss at the time of current collection can be obtained.
11,11a,11b,11c‧‧‧太陽電池單元 11,11a,11b,11c‧‧‧Solar battery unit
12‧‧‧單晶矽基板 12‧‧‧ Single crystal germanium substrate
12a‧‧‧n型雜質擴散層 12a‧‧‧n type impurity diffusion layer
12b‧‧‧p型單晶矽基板 12b‧‧‧p type single crystal germanium substrate
13‧‧‧受光面側電極 13‧‧‧Photon side electrode
13a‧‧‧柵電極 13a‧‧‧ gate electrode
13b‧‧‧匯流電極 13b‧‧‧Concurrent electrode
21‧‧‧柵電極端部 21‧‧‧ gate electrode end
22,44‧‧‧缺口部 22,44‧‧‧ nicks
23‧‧‧側面 23‧‧‧ side
24‧‧‧間隙 24‧‧‧ gap
25‧‧‧抵接合 25‧‧‧Abutment
26‧‧‧重疊寬度 26‧‧‧Overlap width
31‧‧‧連接引線 31‧‧‧Connecting leads
32‧‧‧焊錫 32‧‧‧Solder
41‧‧‧柵電極端部 41‧‧‧ gate electrode end
42‧‧‧柵電極寬度 42‧‧‧ gate electrode width
43‧‧‧柵電極端部寬度 43‧‧‧ gate electrode end width
45‧‧‧寬闊缺口部 45‧‧‧ wide gap
46‧‧‧寬闊缺口部寬度 46‧‧‧ Wide gap width
47‧‧‧缺口部寬度 47‧‧‧ notch width
第1圖係從受光面側觀看本發明的實施形態1之太陽電池單元之立體圖。 Fig. 1 is a perspective view of the solar battery cell according to the first embodiment of the present invention as seen from the light receiving surface side.
第2圖係放大顯示本發明的實施形態1之太陽電池單元的柵電極的形狀之主要部分平面圖。 Fig. 2 is a plan view showing a principal part of a shape of a gate electrode of a solar battery cell according to Embodiment 1 of the present invention.
第3圖係放大顯示本發明的實施形態1之太陽電池單元的匯流電極的形狀之主要部分平面圖。 Fig. 3 is a plan view showing a principal part of a shape of a bus electrode of a solar battery cell according to Embodiment 1 of the present invention.
第4圖係放大顯示本發明的實施形態1之太陽電池單元中的受光面側電極之主要部分平面圖。 Fig. 4 is a plan view showing a principal part of a light-receiving surface side electrode in a solar battery cell according to Embodiment 1 of the present invention.
第5圖係本發明的實施形態1之太陽電池單元中的受光面側電極的主要部分剖面圖。 Fig. 5 is a cross-sectional view showing the main part of the light-receiving surface side electrode in the solar battery cell according to the first embodiment of the present invention.
第6圖係本發明的實施形態1之太陽電池單元中的受光面側電極的主要部分剖面圖。 Fig. 6 is a cross-sectional view showing the principal part of the light-receiving surface side electrode in the solar battery cell according to the first embodiment of the present invention.
第7圖係放大顯示本發明的實施形態1之太陽電池單元中的受光面側電極之主要部分平面圖。 Fig. 7 is a plan view showing a principal part of a light-receiving surface side electrode in a solar battery cell according to Embodiment 1 of the present invention.
第8圖係從受光面側觀看在本發明的實施形態1之太陽電池單元焊接單元間連接用的連接引線後的狀態之立體圖。 Fig. 8 is a perspective view showing a state in which the connecting leads for connecting the solar cell unit welding units according to the first embodiment of the present invention are viewed from the light receiving surface side.
第9圖係放大顯示在本發明的實施形態1之太陽電池單元中的受光面側電極焊接單元間連接用的連接引線後的狀態之主要部分平面圖。 Fig. 9 is a plan view showing a principal part of a state in which the connecting leads for connecting the light-receiving surface side electrode welding units in the solar battery cell according to the first embodiment of the present invention are enlarged.
第10圖係顯示在本發明的實施形態1之太陽電池單元焊接單元間連接用的連接引線後的狀態之主要部分剖面圖。 Fig. 10 is a cross-sectional view showing the main part of a state in which the connecting leads for connecting the solar cell unit between the welding cells of the first embodiment of the present invention are connected.
第11圖係顯示在本發明的實施形態1之太陽電池單元中的受光面側電極焊接單元間連接用的連接引線後的狀態之主要部分剖面圖。 Fig. 11 is a cross-sectional view showing a principal part of a state in which a connection lead for connecting between light-receiving surface side electrode welding units in a solar battery cell according to Embodiment 1 of the present invention is shown.
第12圖係顯示本發明的實施形態1之太陽電池單元透過單元間連接用的連接引線而電性串聯連接的狀態之示意 性立體圖。 Fig. 12 is a view showing a state in which the solar battery cells according to the first embodiment of the present invention are electrically connected in series by connecting the connecting leads for connecting the cells. Sexual perspective.
第13圖係顯示本發明的實施形態1相關之受光面側電極形狀的變形例之主要部分平面圖。 Fig. 13 is a plan view showing a principal part of a modification of the shape of the light-receiving surface side electrode according to the first embodiment of the present invention.
第14圖係顯示本發明的實施形態1相關之受光面側電極形狀的另一個變形例之主要部分平面圖。 Fig. 14 is a plan view showing a principal part of another modification of the shape of the light-receiving surface side electrode according to the first embodiment of the present invention.
第15圖係放大顯示本發明的實施形態2之太陽電池單元的柵電極形狀之主要部分平面圖。 Fig. 15 is a plan view showing a principal part of a shape of a gate electrode of a solar battery cell according to Embodiment 2 of the present invention.
第16圖係放大顯示本發明的實施形態2之太陽電池單元的匯流電極形狀之主要部分平面圖。 Fig. 16 is a plan view showing a principal part of a shape of a bus electrode of a solar battery cell according to a second embodiment of the present invention.
第17圖係放大顯示本發明的實施形態2之太陽電池單元中的受光面側電極之主要部分平面圖。 Fig. 17 is a plan view showing a principal part of a light-receiving surface side electrode in a solar battery cell according to a second embodiment of the present invention.
第18圖係本發明的實施形態2之太陽電池單元中的受光面側電極的主要部分剖面圖。 Figure 18 is a cross-sectional view showing the principal part of the light-receiving surface side electrode in the solar battery cell of the second embodiment of the present invention.
第19圖係放大顯示本發明的實施形態2中柵電極與匯流電極相接觸時的受光面側電極之主要部分平面圖。 Fig. 19 is a plan view showing a principal part of the light-receiving surface side electrode when the gate electrode and the bus electrode are in contact with each other in the second embodiment of the present invention.
第20圖係放大顯示本發明的實施形態2之太陽電池單元中的其他受光面側電極之主要部分平面圖。 Fig. 20 is a plan view showing a principal part of another light-receiving surface side electrode in the solar battery cell according to Embodiment 2 of the present invention.
以下,根據圖式而詳細說明本發明的實施形態之太陽電池單元、太陽電池模組、太陽電池單元之製造方法、及太陽電池模組之製造方法。但本發明並不受此實施形態所限定。 Hereinafter, a solar battery cell, a solar battery module, a method of manufacturing a solar battery cell, and a method of manufacturing a solar battery module according to embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited by the embodiment.
第1圖係從受光面側觀看本發明的實施形態1之太陽電池單元11之立體圖。實施形態1之太陽電池單元11係具備:在作為第1導電型的半導體基板之p型單晶矽基板12b的表層形成作為第2導電型之n型的雜質擴散而成的n型雜質擴散層12a而具有pn接合之單晶矽基板12;形成於單晶矽基板12的受光面側的表面之梳形形狀的受光面側電極13;以及形成於單晶矽基板12之與受光面相反側之背面之梳形形狀的未圖示之背面側電極。 Fig. 1 is a perspective view of the solar battery unit 11 according to the first embodiment of the present invention as seen from the light receiving surface side. The solar battery cell 11 of the first embodiment includes an n-type impurity diffusion layer in which an n-type impurity which is a second conductivity type is diffused on the surface layer of the p-type single crystal germanium substrate 12b which is a semiconductor substrate of the first conductivity type. a single crystal germanium substrate 12 having a pn junction, a comb-shaped light-receiving surface side electrode 13 formed on the surface of the single crystal germanium substrate 12 on the light-receiving surface side, and a side opposite to the light-receiving surface of the single crystal germanium substrate 12; A back side electrode (not shown) having a comb shape on the back side.
在p型單晶矽基板12b的表面,亦即n型雜質擴散層12a的表面,以使太陽電池單元11能吸收更多的太陽光之方式,形成由具有被例如矽的(111)面包圍之四角錐狀的凸部之凹凸所構成之未圖示的紋理(texture)構造。另外,在單晶矽基板12的受光面側的表面,亦可在未形成受光面側電極13之區域具備抗反射膜。半導體基板並不限於p型單晶矽基板,亦可採用p型多晶矽基板、n型單晶矽基板、n型多晶矽基板等之可使用於太陽電池之基板。在使用n型基板作為半導體基板時,只要使太陽電池單元11的各構件的導電型為相反的型即可。 The surface of the p-type single crystal germanium substrate 12b, that is, the surface of the n-type impurity diffusion layer 12a is formed so that the solar cell unit 11 can absorb more sunlight, and is surrounded by a (111) plane having, for example, germanium. A texture structure (not shown) formed by the unevenness of the quadrangular pyramid-shaped convex portion. Further, on the surface on the light-receiving surface side of the single crystal germanium substrate 12, an anti-reflection film may be provided in a region where the light-receiving surface side electrode 13 is not formed. The semiconductor substrate is not limited to a p-type single crystal germanium substrate, and a substrate which can be used for a solar cell such as a p-type polycrystalline germanium substrate, an n-type single crystal germanium substrate, or an n-type polycrystalline germanium substrate can be used. When an n-type substrate is used as the semiconductor substrate, the conductivity type of each member of the solar cell unit 11 may be reversed.
受光面側電極13係包含具有細長形狀之柵電極13a以及寬度設成比柵電極13a更寬之兩條匯流電極13b。柵電極13a係在具有pn接合之單晶矽基板12的受光面上,在單晶矽基板12的面方向中的第1方向伸長而配置。匯流電極13b係在與第1方向交叉之第2方向伸長而配置。在本實施形態中,柵電極13a的伸長方向與匯流電 極13b的伸長方向係在單晶矽基板12的面方向正交。亦即,第1方向及第2方向係在單晶矽基板12的面方向正交。另外,柵電極13a的伸長方向與匯流電極13b的伸長方向係亦可在單晶矽基板12的面方向中以直角以外的角度交叉。亦即,第1方向及第2方向可在單晶矽基板12的面方向中以直角以外的角度交叉。背面側電極與受光面側電極13同樣,包含未圖示之具有細長形狀之柵電極以及寬度設有比柵電極更寬之兩條匯流電極。背面側電極的匯流電極的長度方向,係設成與受光面側電極13的匯流電極13b的長度方向相同。 The light-receiving side electrode 13 includes a gate electrode 13a having an elongated shape and two bus electrodes 13b having a width wider than that of the gate electrode 13a. The gate electrode 13a is disposed on the light receiving surface of the single crystal germanium substrate 12 having the pn junction, and is elongated in the first direction in the surface direction of the single crystal germanium substrate 12. The bus electrode 13b is elongated and arranged in the second direction crossing the first direction. In the present embodiment, the direction of elongation of the gate electrode 13a and the confluence The direction in which the poles 13b extend is orthogonal to the plane direction of the single crystal germanium substrate 12. That is, the first direction and the second direction are orthogonal to each other in the plane direction of the single crystal germanium substrate 12. Further, the direction in which the gate electrode 13a extends and the direction in which the bus electrode 13b extends may intersect at an angle other than a right angle in the plane direction of the single crystal germanium substrate 12. In other words, the first direction and the second direction may intersect at an angle other than a right angle in the plane direction of the single crystal germanium substrate 12. Similarly to the light-receiving surface side electrode 13, the back side electrode includes a gate electrode having an elongated shape (not shown) and two bus electrodes having a width wider than the gate electrode. The longitudinal direction of the bus electrode of the back side electrode is the same as the longitudinal direction of the bus electrode 13b of the light receiving surface side electrode 13.
接著,說明有關針對太陽電池單元11中的受光面側電極13。第2圖係放大顯示本實施形態1之太陽電池單元11的柵電極13a的形狀之主要部分平面圖。第3圖係放大顯示本實施形態1之太陽電池單元11的匯流電極13b的形狀之主要部分平面圖。第4圖係放大顯示本發明的實施形態1之太陽電池單元11中的受光面側電極13之主要部分平面圖。第5圖係本發明的實施形態1之太陽電池單元11中的受光面側電極的主要部分斷面圖,第4圖中的線V-V之主要部分斷面圖。第6圖係本發明的實施形態1之太陽電池單元11中的受光面側電極13的主要部分斷面圖,第4圖中的線VI-VI之主要部分斷面圖。 Next, the light-receiving surface side electrode 13 in the solar battery cell 11 will be described. Fig. 2 is a plan view showing a principal part of the shape of the gate electrode 13a of the solar battery cell 11 of the first embodiment. Fig. 3 is a plan view showing a principal part of the shape of the bus electrode 13b of the solar battery cell 11 of the first embodiment. Fig. 4 is a plan view showing a principal part of the light-receiving surface side electrode 13 in the solar battery cell 11 of the first embodiment of the present invention. Fig. 5 is a cross-sectional view showing a principal part of a light-receiving surface side electrode in the solar battery cell 11 according to the first embodiment of the present invention, and a cross-sectional view of a principal part of a line V-V in Fig. 4. Fig. 6 is a cross-sectional view showing the principal part of the light-receiving surface side electrode 13 in the solar battery cell 11 of the first embodiment of the present invention, and a cross-sectional view of a principal part of the line VI-VI in Fig. 4.
柵電極13a係如第2圖所示,在長度方向分割而配置。亦即,在長度方向相鄰的柵電極13a彼此間係配置在一直線上。而且,在長度方向相鄰的柵電極13a彼 此間,其各自的端部之柵電極端部21為相向。此外,柵電極13a係在單晶矽基板12的面方向中與柵電極13a的長度方向交叉的方向,正確地係在與柵電極13a的長度方向正交之方向以既定的間隔並列,而配置成細長形狀。既定的間隔係在柵電極13a的寬度方向之相鄰的柵電極13a的中心位置間之長度。 As shown in FIG. 2, the gate electrode 13a is divided and arranged in the longitudinal direction. That is, the gate electrodes 13a adjacent in the longitudinal direction are arranged on a straight line with each other. Moreover, the gate electrode 13a adjacent to each other in the longitudinal direction At this time, the gate electrode ends 21 of the respective ends thereof are opposed to each other. In addition, the gate electrode 13a is arranged in a direction intersecting with the longitudinal direction of the gate electrode 13a in the surface direction of the single crystal germanium substrate 12, and is arranged in parallel at a predetermined interval in the direction orthogonal to the longitudinal direction of the gate electrode 13a. In a slender shape. The predetermined interval is the length between the center positions of the adjacent gate electrodes 13a in the width direction of the gate electrode 13a.
匯流電極13b係如第3圖所示,在長邊方向之側面23設有缺口部22。缺口部22係從匯流電極13b的側面23在匯流電極13b的短邊方向,亦即寬度方向往內側凹入成細長形狀,且在匯流電極13b的厚度方向貫通。缺口部22的伸長方向係在單晶矽基板12的面方向中與柵電極13a的伸長方向相同之方向。缺口部22係在單晶矽基板12的面方向具有與柵電極端部21的形狀對應,且具有比柵電極端部21的外形尺寸更大的尺寸而凹入形成的ㄈ字形狀。 As shown in FIG. 3, the bus electrode 13b is provided with a notch portion 22 on the side surface 23 in the longitudinal direction. The notch portion 22 is formed in an elongated shape from the side surface 23 of the bus electrode 13b in the short-side direction of the bus electrode 13b, that is, in the width direction, and penetrates in the thickness direction of the bus electrode 13b. The direction in which the notch portion 22 is elongated is the same direction as the direction in which the gate electrode 13a extends in the surface direction of the single crystal germanium substrate 12. The notch portion 22 has a U-shape which is recessed and formed in a surface direction of the single crystal germanium substrate 12 corresponding to the shape of the gate electrode end portion 21 and having a size larger than the outer shape of the gate electrode end portion 21.
缺口部22係為了在n型雜質擴散層12a上收納柵電極13的柵電極端部21,在匯流電極13b的長度方向以既定的間隔並列配置。既定的間隔係在匯流電極13b的長度方向之相鄰的缺口部22的中心位置間的長度。匯流電極13b並列的既定的間隔,係與柵電極13a並列的既定的間隔相同。而且,以柵電極端部21收納在柵電極13的缺口部22內之狀態,藉由將柵電極13a及匯流電極13b配置在n型雜質擴散層12a上,形成受光面側電極13。 The notch portion 22 is arranged side by side at a predetermined interval in the longitudinal direction of the bus electrode 13b in order to accommodate the gate electrode end portion 21 of the gate electrode 13 on the n-type impurity diffusion layer 12a. The predetermined interval is the length between the center positions of the adjacent notch portions 22 in the longitudinal direction of the bus electrode 13b. The predetermined interval in which the bus electrodes 13b are juxtaposed is the same as the predetermined interval in which the gate electrodes 13a are juxtaposed. In the state in which the gate electrode end portion 21 is housed in the notch portion 22 of the gate electrode 13, the gate electrode 13a and the bus electrode 13b are disposed on the n-type impurity diffusion layer 12a to form the light-receiving surface side electrode 13.
在單晶矽基板12的面內,在缺口部22內柵 電極端部21的側面與匯流電極13b的側面之間,係如第4至6圖所示設有間隙(clearance)24。亦即,在單晶矽基板12的面內,柵電極13a的柵電極端部21係在缺口部22內與匯流電極13b相分離而配置。藉由設置間隙24,柵電極13a與匯流電極13b並無直接接觸。因此,柵電極13a與匯流電極13b並不會重疊,在匯流電極13b的表面可防止因柵電極13a與匯流電極13b之重疊所產生之凹凸部之發生。藉此,在將連接引線與匯流電極13b焊接時,可確保匯流電極13b與連接引線有較寬的接合面積,匯流電極13b與連接引線之焊接性穩定。 In the plane of the single crystal germanium substrate 12, the inside of the notch portion 22 is gated. A clearance 24 is provided between the side surface of the electrode end portion 21 and the side surface of the bus electrode 13b as shown in Figs. 4 to 6. That is, in the surface of the single crystal germanium substrate 12, the gate electrode end portion 21 of the gate electrode 13a is disposed apart from the bus electrode 13b in the notch portion 22. By providing the gap 24, the gate electrode 13a and the bus electrode 13b are not in direct contact. Therefore, the gate electrode 13a and the bus electrode 13b do not overlap each other, and the occurrence of the uneven portion due to the overlap of the gate electrode 13a and the bus electrode 13b can be prevented on the surface of the bus electrode 13b. Thereby, when the connection lead and the bus electrode 13b are soldered, it is possible to ensure a wide bonding area between the bus electrode 13b and the connection lead, and the solderability of the bus electrode 13b and the connection lead is stabilized.
柵電極13a在長度方向並不連續,而成為在匯流電極13b的位置被分割之形狀,藉此,可抑制該被分割之區域份之柵電極13a的電極材料的使用量。 The gate electrode 13a is not continuous in the longitudinal direction and has a shape that is divided at the position of the bus electrode 13b, whereby the amount of use of the electrode material of the gate electrode 13a of the divided region portion can be suppressed.
雖然省略了詳細說明,但背面側電極也具有與受光面側電極13相同之構造。又,背面側電極只要為在單晶矽基板12的背面之與匯流電極13b對應的位置,具有在匯流電極13b的長度方向伸長之集電電極之構造即可,亦可不具有與受光面側電極13相同的梳形形狀之構造。 Although the detailed description is omitted, the back side electrode also has the same structure as the light receiving surface side electrode 13. In addition, the back side electrode may have a structure in which the collector electrode which is elongated in the longitudinal direction of the bus electrode 13b is provided at a position corresponding to the bus electrode 13b on the back surface of the single crystal germanium substrate 12, and may not have a light receiving surface side electrode. 13 The same comb shape configuration.
接著,說明用以製造太陽電池單元11之步驟。此處,說明之步驟係與使用矽基板之一般的太陽電池單元的製造步驟相同,故不特別進行圖示。 Next, the steps for manufacturing the solar cell unit 11 will be described. Here, the steps described are the same as the manufacturing steps of a general solar battery cell using a ruthenium substrate, and therefore are not particularly illustrated.
首先,藉由切片(slice)加工從矽錠(silicon ingot)切出p型單晶矽基板12b。藉由切片加工而從矽錠所切出之p型單晶矽基板12b的表面,會附著有線鋸(wire)在切片 加工時切削產生的粉、由研磨劑等所構成之污染物質的有機雜質及金屬雜質。因此,對於從矽錠所切出之p型單晶矽基板12b實施水洗處理等之洗淨處理。 First, the p-type single crystal germanium substrate 12b is cut out from silicon ingot by slice processing. A wire saw is attached to the surface of the p-type single crystal germanium substrate 12b cut out from the crucible by slicing. The powder generated by the cutting during processing, the organic impurities of the pollutants composed of the abrasive, and the like, and the metal impurities. Therefore, the p-type single crystal germanium substrate 12b cut out from the crucible is subjected to a washing treatment such as a water washing treatment.
另外,在所切出的基板的表層,會產生深度到達5μm左右之被稱為損傷(damage)層之由於切片所造成的加工變形。太陽電池單元中殘存有此損傷層,該損傷層就會促進電子之再結合,導致太陽電池單元特性之惡化。因此,損傷層被去除掉。 Further, in the surface layer of the cut substrate, a processing deformation due to the slice called a damage layer having a depth of about 5 μm is generated. The damaged layer remains in the solar cell unit, and the damaged layer promotes recombination of electrons, resulting in deterioration of solar cell characteristics. Therefore, the damaged layer is removed.
以及,對p型單晶矽基板12b的表面施予使用到在鹼性水溶液中加入IPA等的有機物作為添加劑而成的高溫的濕蝕刻(wet etching)液之異向性蝕刻(etching),在p型單晶矽基板12b的表面形成由具有例如被矽的(111)面包圍之四角錐形的凸部之凹凸所構成之紋理構造。 Further, the surface of the p-type single crystal germanium substrate 12b is subjected to an anisotropic etching using a high-temperature wet etching liquid obtained by adding an organic substance such as IPA as an additive to an alkaline aqueous solution. The surface of the p-type single crystal germanium substrate 12b is formed into a texture structure composed of irregularities of a convex portion having a quadrangular pyramid shape surrounded by a (111) plane of a crucible.
接著,將表面形成有紋理構造之p型單晶矽基板12b送入熱擴散爐,在磷醯氯(phosphorus oxychloride)(POCl3)蒸氣之存在下進行加熱以在p型單晶矽基板12b的表面形成磷玻璃(phosphorus glass),以使磷擴散到p型單晶矽基板12b中。藉此,在p型單晶矽基板12b的表層形成n型雜質擴散層12a,形成具有pn接合之單晶矽基板12。 Next, the p-type single crystal germanium substrate 12b having a textured structure on its surface is sent to a thermal diffusion furnace, and heated in the presence of phosphorous oxychloride (POCl 3 ) vapor to be applied to the p-type single crystal germanium substrate 12b. Phosphorus glass is formed on the surface to diffuse phosphorus into the p-type single crystal germanium substrate 12b. Thereby, the n-type impurity diffusion layer 12a is formed on the surface layer of the p-type single crystal germanium substrate 12b, and the single crystal germanium substrate 12 having the pn junction is formed.
接著,在氫氟酸(hydrofluoric acid)溶液中將單晶矽基板12表面的磷玻璃去除掉,然後形成電極。首先,在單晶矽基板12的受光面印刷形成受光面側電極13。亦即,在單晶矽基板12的受光面將混入有鋁之鋁糊 (aluminum paste)網版印刷呈柵電極13a的形狀。又,在單晶矽基板12的受光面將混入有銀之銀糊網版印刷呈匯流電極13b的形狀。此處,雖然一般在匯流電極的材料係採用銀糊,但本實施形態1之匯流電極13b的電極材料並不限定於銀糊。匯流電極13b的電極材料從導電率及價格的方面而言,配合目的而選擇例如金糊、銅糊、銀鋁糊等其他的金屬糊。 Next, the phosphor glass on the surface of the single crystal germanium substrate 12 is removed in a hydrofluoric acid solution, and then an electrode is formed. First, the light-receiving surface side electrode 13 is printed on the light-receiving surface of the single crystal germanium substrate 12. That is, the aluminum paste of aluminum is mixed on the light receiving surface of the single crystal germanium substrate 12. The (aluminum paste) screen printing is in the shape of the gate electrode 13a. Moreover, the silver paste in which silver is mixed on the light-receiving surface of the single crystal germanium substrate 12 is screen-printed into the shape of the bus electrode 13b. Here, although the silver paste is generally used for the material of the bus electrode, the electrode material of the bus electrode 13b of the first embodiment is not limited to the silver paste. The electrode material of the bus electrode 13b is selected from other metal pastes such as a gold paste, a copper paste, and a silver aluminum paste in terms of electrical conductivity and price.
接著,在單晶矽基板12的背面印刷形成背面側電極。亦即,在單晶矽基板12的背面將包含有鋁及玻璃粉(glass frit)之鋁糊以網版印刷成與柵電極13a相同的柵電極之形狀。又,在單晶矽基板12的背面將包含有銀及玻璃粉之銀糊以網版印刷成與匯流電極13b相同的匯流電極的形狀。然後,對於印刷後的糊實施燒成處理而形成受光面側電極13及背面側電極。以上述的方式,製作太陽電池單元11。 Next, a back side electrode is formed by printing on the back surface of the single crystal germanium substrate 12. That is, the aluminum paste containing aluminum and glass frit is screen-printed into the same gate electrode shape as the gate electrode 13a on the back surface of the single crystal germanium substrate 12. Further, a silver paste containing silver and glass frit is printed on the back surface of the single crystal germanium substrate 12 in the same shape as the bus electrode of the bus electrode 13b. Then, the paste after printing is subjected to a baking treatment to form the light-receiving surface side electrode 13 and the back surface side electrode. In the above manner, the solar cell unit 11 is fabricated.
接著,說明有關太陽電池單元11的受光面側電極13的製造方法。首先,在單晶矽基板12的受光面上,藉由網版印刷而印刷包含有鋁及玻璃粉之電極形成用的鋁糊作為柵電極13a,並使其乾燥。鋁糊係藉網版印刷印刷在如第2圖所示並列成細長形狀,而在單晶矽基板12的受光面上的既定位置。 Next, a method of manufacturing the light-receiving surface side electrode 13 of the solar battery cell 11 will be described. First, an aluminum paste for forming an electrode containing aluminum and glass frit is printed on the light-receiving surface of the single crystal germanium substrate 12 as a gate electrode 13a by screen printing, and dried. The aluminum paste is printed on the light receiving surface of the single crystal germanium substrate 12 by the screen printing as shown in Fig. 2 in an elongated shape.
繼而,在單晶矽基板12的受光面上,藉由網版印刷而印刷將包含有銀及玻璃粉之電極形成用的銀糊作為匯流電極13b,並使其乾燥。銀糊係如第3圖所示以在 匯流電極13b的長度方向的側面23設有缺口部22,且以使柵電極13a的柵電極端部21收納在缺口部22內之配置,藉由網版印刷而印刷在單晶矽基板12的受光面上的既定的位置。亦可使柵電極13a與匯流電極13b的電極形成用的糊之印刷順序與上述的順序相反。 Then, on the light-receiving surface of the single crystal germanium substrate 12, a silver paste for forming an electrode including silver and glass frit is printed as a bus electrode 13b by screen printing, and dried. Silver paste is shown in Figure 3 The side surface 23 of the bus electrode 13b in the longitudinal direction is provided with a notch portion 22, and the gate electrode end portion 21 of the gate electrode 13a is housed in the notch portion 22, and is printed on the single crystal germanium substrate 12 by screen printing. The predetermined position on the light receiving surface. The printing order of the paste for forming the electrodes of the gate electrode 13a and the bus electrode 13b may be reversed from the above-described order.
此時,在單晶矽基板12的面內,在柵電極13a與匯流電極13b之間設置間隙24而印刷銀糊,藉此,使柵電極13a與匯流電極13b不直接接觸而印刷。因此,柵電極13a與匯流電極13b並不重疊,可防止在匯流電極13b的表面由於柵電極13a與匯流電極13b之重疊所致之凹凸部之發生。因此,如後述,將連接引線與匯流電極13b焊接時,可確保匯流電極13b與連接引線有較寬的接合面積,匯流電極13b與連接引線之焊接性會穩定。在第3及4圖中,缺口部22的內部的角部雖係形成為直角,但只要可確保間隙24,即使缺口部22的內部的角部具有些微的圓角亦無妨。 At this time, in the surface of the single crystal germanium substrate 12, a gap 24 is provided between the gate electrode 13a and the bus electrode 13b to print the silver paste, whereby the gate electrode 13a and the bus electrode 13b are printed without being in direct contact with each other. Therefore, the gate electrode 13a and the bus electrode 13b do not overlap each other, and the occurrence of the uneven portion due to the overlap of the gate electrode 13a and the bus electrode 13b on the surface of the bus electrode 13b can be prevented. Therefore, as will be described later, when the connection lead and the bus electrode 13b are soldered, it is possible to ensure a wide bonding area between the bus electrode 13b and the connection lead, and the solderability of the bus electrode 13b and the connection lead is stabilized. In the third and fourth figures, the corners of the inside of the notch portion 22 are formed at right angles. However, as long as the gap 24 can be secured, the corners of the inside of the notch portion 22 may have a slight rounded corner.
柵電極13a與匯流電極13b,係藉由網版印刷而印刷電極形成用的糊材料所形成之糊電極。在柵電極13a與匯流電極13b之形成中,存在在單晶矽基板12的受光面上印刷糊材料時之印刷位置精度、及受到其他的印刷條件影響而產生的印刷寬度精度。因此,間隙24之大小,亦即在單晶矽基板12的面內之柵電極端部21與匯流電極13b之間的距離,較佳係設為:與在匯流電極13b的長度方向上柵電極13a及匯流電極13b各別之源自既定的印刷 位置之印刷位置之偏差的容許值、及源自既定的印刷寬度之印刷寬度之偏差的容許值之總和值為相同之值。印刷位置的偏差的容許值,係在匯流電極13b的長度方向上源自本來的印刷位置之偏差所容許之長度。印刷寬度的偏差的容許值,係源自本來的印刷寬度之偏差所容許之長度。 The gate electrode 13a and the bus electrode 13b are paste electrodes formed by printing a paste material for electrode formation by screen printing. In the formation of the gate electrode 13a and the bus electrode 13b, there is a printing position accuracy when printing a paste material on the light receiving surface of the single crystal germanium substrate 12, and a printing width accuracy which is affected by other printing conditions. Therefore, the size of the gap 24, that is, the distance between the gate electrode end portion 21 and the bus electrode 13b in the plane of the single crystal germanium substrate 12 is preferably set to be the gate electrode in the longitudinal direction of the bus electrode 13b. 13a and the bus electrode 13b are each derived from a predetermined printing The total value of the allowable value of the deviation of the printing position of the position and the tolerance of the printing width derived from the predetermined printing width is the same value. The allowable value of the deviation of the printing position is the length allowed by the deviation of the original printing position in the longitudinal direction of the bus electrode 13b. The allowable value of the deviation of the printing width is the length allowed by the deviation of the original printing width.
此處,使間隙24的大小設為印刷位置的偏差的容許值與印刷寬度的偏差的容許值之總和值為相同之值,藉此,即使在匯流電極13b的長度方向上柵電極13a及匯流電極13b各別的印刷位置都在印刷位置的偏差的容許值內為最大的偏差,進一步柵電極13a及匯流電極13b各別的印刷寬度都在印刷寬度的偏差的容許值內為最大的偏差時,如第7圖所示,柵電極13a及匯流電極13b即使有在匯流電極13b的長度方向上產生側面彼此間相接觸之抵接合25,亦不會重疊。第7圖係放大顯示本發明的實施形態1之太陽電池單元11中的受光面側電極13之主要部分平面圖。 Here, the size of the gap 24 is set to the same value as the total value of the allowable value of the deviation between the printing position and the printing width, whereby the gate electrode 13a and the confluence are in the longitudinal direction of the bus electrode 13b. The respective printing positions of the electrodes 13b are the largest deviations within the allowable value of the deviation of the printing position, and the respective printing widths of the gate electrode 13a and the bus electrode 13b are the largest deviations within the allowable value of the variation of the printing width. As shown in Fig. 7, the gate electrode 13a and the bus electrode 13b do not overlap each other even if they are in contact with each other in the longitudinal direction of the bus electrode 13b. Fig. 7 is a plan view showing a principal part of the light-receiving surface side electrode 13 in the solar battery cell 11 of the first embodiment of the present invention.
因此,在匯流電極13b上,不會產生因柵電極13a與匯流電極13b之重疊所致之凹凸。因此,在如後述,將連接引線31焊接到匯流電極13b上時,匯流電極13b與連接引線31可得到良好的接合面積。又,間隙24的大小也可略長於前述之總和值。此時也與上述同樣,柵電極13a與匯流電極13b不會重疊。 Therefore, irregularities due to the overlap of the gate electrode 13a and the bus electrode 13b do not occur on the bus electrode 13b. Therefore, when the connection lead 31 is soldered to the bus electrode 13b as will be described later, the bus electrode 13b and the connection lead 31 can obtain a good bonding area. Also, the size of the gap 24 may be slightly longer than the aforementioned sum value. At this time, as in the above, the gate electrode 13a and the bus electrode 13b do not overlap each other.
同樣地,在匯流電極13b的寬度方向之間隙24的大小,亦即,在匯流電極13b的寬度方向之缺口部22 的柵電極端部21與匯流電極13b之間的距離,也較佳係設為:在匯流電極13b的寬度方向上柵電極13a及匯流電極13b各別之印刷位置的偏差之容許值及印刷長度的偏差之容許值之總和值為相同之值。印刷長度的偏差之容許值,係在匯流電極13b的寬度方向上源自本來的印刷長度之偏差所容許之長度。 Similarly, the size of the gap 24 in the width direction of the bus electrode 13b, that is, the notch portion 22 in the width direction of the bus electrode 13b The distance between the gate electrode end portion 21 and the bus electrode 13b is also preferably a tolerance value and a printing length of the respective printing positions of the gate electrode 13a and the bus electrode 13b in the width direction of the bus electrode 13b. The sum of the allowable values of the deviations is the same value. The allowable value of the deviation of the printing length is the length allowed by the deviation of the original printing length in the width direction of the bus electrode 13b.
此時,使間隙24的大小設為與印刷位置的偏差之容許值及印刷長度的偏差之容許值之總和值為相同之值,藉此,即使在匯流電極13b的寬度方向上柵電極13a及匯流電極13b各別的印刷位置都在印刷位置的偏差之容許值內為最大的偏差,進一步,柵電極13a及匯流電極13b各別的印刷長度都在印刷長度的偏差之容許值內成為最大的偏差時,柵電極13a與匯流電極13b即使有在匯流電極13b的寬度方向上側面彼此互相接觸,亦不會重疊。 At this time, the size of the gap 24 is set to the same value as the sum of the allowable values of the deviation from the printing position and the tolerance of the printing length, whereby the gate electrode 13a and the width direction of the bus electrode 13b are provided. The respective printing positions of the bus electrodes 13b are the largest deviations within the allowable value of the deviation of the printing position, and the respective printing lengths of the gate electrode 13a and the bus electrode 13b are maximized within the allowable value of the deviation of the printing length. In the case of the deviation, the gate electrode 13a and the bus electrode 13b do not overlap each other even if the side faces in the width direction of the bus electrode 13b are in contact with each other.
藉由使柵電極13a及匯流電極13b的厚度設為相同的厚度,將後述的連接引線焊接到匯流電極13b上之時,在匯流電極13b與連接引線之間可確保良好的接合面積。另外,使柵電極13a與匯流電極13b的厚度之差,即使最大,亦設為與連接至受光面側電極13之連接引線的鍍覆焊錫的厚度為相同。如後述,一般而言,連接引線為表面鍍有焊錫之銅線。因此,藉由加熱連接引線,被鍍覆焊錫會融熔,可將柵電極13a及匯流電極13b、與銅線焊接接合。使柵電極13a與匯流電極13b的厚度之差,設為連接至受光面側電極13之連接引線的鍍覆有焊錫的厚度 以下,可將後述的連接引線焊接至匯流電極13b上之時,在匯流電極13b與連接引線之間可確保良好的接合面積。亦即,藉由抑制柵電極13a與匯流電極13b的厚度之差,可減低在缺口部22內之柵電極13a的凹凸,且可確實地使柵電極13a及匯流電極13b與連接引線連接。藉此,接合連接引線之時可確保適當的連接引線的焊錫接合面積,並可抑制集電時的電力損耗。 When the thickness of the gate electrode 13a and the bus electrode 13b is set to the same thickness, and a connection lead to be described later is soldered to the bus electrode 13b, a good bonding area can be secured between the bus electrode 13b and the connection lead. Further, even if the difference between the thicknesses of the gate electrode 13a and the bus electrode 13b is the largest, the thickness of the plated solder connected to the connection lead of the light-receiving surface side electrode 13 is the same. As will be described later, in general, the connecting leads are copper wires having a surface plated with solder. Therefore, the solder to be plated is melted by heating the connection leads, and the gate electrode 13a and the bus electrode 13b can be soldered to the copper wire. The difference between the thicknesses of the gate electrode 13a and the bus electrode 13b is the thickness of the plated solder connected to the connection lead of the light-receiving surface side electrode 13. Hereinafter, when a connection lead to be described later is soldered to the bus electrode 13b, a good bonding area can be secured between the bus electrode 13b and the connection lead. In other words, by suppressing the difference between the thicknesses of the gate electrode 13a and the bus electrode 13b, the unevenness of the gate electrode 13a in the cutout portion 22 can be reduced, and the gate electrode 13a and the bus electrode 13b can be reliably connected to the connection lead. Thereby, the solder joint area of the appropriate connection lead can be ensured when the connection lead is joined, and power loss at the time of current collection can be suppressed.
接著,說明有關藉由單元間連接用的連接引線將複數個太陽電池單元11焊接所構成的太陽電池模組。形成複數個太陽電池單元11,且將鄰接的太陽電池單元11彼此間電性串聯連接,可實現電力的取出效率優異之太陽電池模組。此時,首先將表面被覆有焊錫之連接引線31的一端側,配置在複數個太陽電池單元11中之第1太陽電池單元之包含收納有柵電極13a的柵電極端部21之缺口部22上之匯流電極13b上。接著,將連接引線31的另一端側,配置在第2太陽電池單元的背面側電極之包含收納有柵電極13a的柵電極端部21之缺口部22上之匯流電極13b上。繼而,藉由加熱連接引線31,在第1太陽電池單元及第2太陽電池單元中進行利用焊錫使收納在缺口部22之柵電極13a的柵電極端部21及匯流電極13b、與連接引線相接合之步驟,使第1太陽電池單元與第2太陽電池單元電性連接。為了容易理解,此處係對於背面側電極的構成部也記載與受光面側電極13的構成部相同的符號而進行說明。另外,本說明書中之太陽電池模組係包含僅在 太陽電池單元11的電極上藉由焊錫而接合連接引線之形態者。 Next, a solar battery module in which a plurality of solar battery cells 11 are welded by a connecting lead for inter-unit connection will be described. A plurality of solar battery cells 11 are formed, and the adjacent solar battery cells 11 are electrically connected in series to each other, whereby a solar battery module having excellent power extraction efficiency can be realized. At this time, first, one end side of the connection lead 31 to which the solder is coated is placed on the notch portion 22 of the first solar battery cell 11 including the gate electrode end portion 21 in which the gate electrode 13a is housed. On the bus electrode 13b. Next, the other end side of the connection lead 31 is placed on the bus electrode 13b of the back surface side electrode of the second solar cell including the notch portion 22 of the gate electrode end portion 21 in which the gate electrode 13a is housed. Then, by heating the connection lead 31, the gate electrode end portion 21 and the bus electrode 13b of the gate electrode 13a accommodated in the notch portion 22 are soldered to the first solar cell unit and the second solar cell unit, and the connection lead is formed. In the bonding step, the first solar battery unit and the second solar battery unit are electrically connected. For the sake of easy understanding, the constituent portions of the back side electrode are also described with the same reference numerals as those of the light receiving surface side electrode 13 . In addition, the solar cell module in this specification contains only The electrode of the solar cell unit 11 is joined to the surface of the connecting lead by soldering.
第8圖係從受光面側觀看在本發明的實施形態1之太陽電池單元11焊接單元間連接用的連接引線31後的狀態之立體圖。第9圖係放大顯示在本發明的實施形態1之太陽電池單元11中的受光面側電極13焊接單元間連接用的連接引線31後的狀態之主要部分平面圖。第10圖係顯示在本發明的實施形態1之太陽電池單元11焊接單元間連接用的連接引線31後的狀態之主要部分剖面圖,且第9圖中的線分X-X的主要部分剖面圖。第11圖係顯示在本發明的實施形態1之太陽電池單元11中的受光面側電極13焊接單元間連接用的連接引線31後的狀態之主要部分剖面圖,第9圖中的線分XI-XI的主要部分剖面圖。第12圖係顯示本發明的實施形態1之太陽電池單元11a,11b,11c透過單元間連接用的連接引線31而電性串聯連接的狀態之示意立體圖。 Fig. 8 is a perspective view showing a state in which the connection leads 31 for connecting the welding cells between the solar cells 11 of the first embodiment of the present invention are viewed from the light-receiving surface side. Fig. 9 is a plan view showing a principal part of a state in which the connection lead 31 for soldering unit connection between the light-receiving surface side electrodes 13 in the solar battery cell 11 of the first embodiment of the present invention is enlarged. Fig. 10 is a cross-sectional view showing a principal part of a state in which the connection leads 31 for connecting the cells are connected to each other in the solar cell unit 11 according to the first embodiment of the present invention, and a cross-sectional view of a main portion taken along line X-X in Fig. 9. Fig. 11 is a cross-sectional view showing a main part of a state in which the connection lead 31 for connecting the light-receiving surface side electrodes 13 in the solar cell unit 11 of the first embodiment of the present invention is connected, and the line XI in Fig. 9 is shown. - The main part of the XI section. Fig. 12 is a schematic perspective view showing a state in which the solar battery cells 11a, 11b, and 11c according to the first embodiment of the present invention are electrically connected in series by the connection leads 31 for connecting the cells.
連接引線31係如第10圖所示,藉由鍍覆而於連接引線31之表面被覆有焊錫32。使用於連接引線31之金屬線,從導電性及價格廉價方面而言以銅為佳。將連接引線31配置在匯流電極13b上之狀態加熱連接引線31,藉此,使被鍍覆的焊錫32融熔,藉由焊錫32將配置在缺口部22內之柵電極13a的柵電極端部21及匯流電極13b、與連接引線31焊接接合。 As shown in FIG. 10, the connection lead 31 is coated with solder 32 on the surface of the connection lead 31 by plating. The metal wire used for the connection lead 31 is preferably copper in terms of conductivity and cost. The connection lead 31 is placed on the bus electrode 13b, and the connection lead 31 is heated, whereby the plated solder 32 is melted, and the gate electrode 13a of the gate electrode 13a disposed in the notch portion 22 is soldered by the solder 32. 21 and the bus electrode 13b are soldered to the connection lead 31.
此處,連接引線31係在匯流電極13b的寬度 內,在連接引線31的配置精度的容許範圍內配置在匯流電極13b上,藉此,如第10圖所示,透過鍍覆在連接引線31的表面之焊錫32而使柵電極13a及匯流電極13b電性連接。配置精度的容許範圍係在匯流電極13b寬度內源自本來的印刷位置的偏差所容許之長度。 Here, the connection lead 31 is attached to the width of the bus electrode 13b. The bus electrode 13b is placed on the bus electrode 13b within the allowable range of the arrangement accuracy of the connection lead 31. Thus, as shown in FIG. 10, the gate electrode 13a and the bus electrode are passed through the solder 32 plated on the surface of the connection lead 31. 13b electrical connection. The allowable range of the arrangement accuracy is the length allowed by the deviation of the original printing position within the width of the bus electrode 13b.
柵電極13a及匯流電極13b係藉由設置間隙24而不會重疊,故不會電性連接。但是,在匯流電極13b設置缺口部22,且將柵電極13a形成為使柵電極13a的柵電極端部21進入該缺口部22內之狀態。而且,在匯流電極13b的缺口部22上也配置連接引線31,所以藉由加熱連接引線31而使匯流電極13b焊接接合至連接引線31的同時,也會將缺口部22內的柵電極端部21焊接接合至連接引線31,透過連接引線31使匯流電極13b及柵電極13a電性連接。藉此,可將太陽電池單元11產生的電力從匯流電極13b及柵電極端部21收集到連接引線31。 The gate electrode 13a and the bus electrode 13b are not overlapped by providing the gap 24, and thus are not electrically connected. However, the notch portion 22 is provided in the bus electrode 13b, and the gate electrode 13a is formed in a state in which the gate electrode end portion 21 of the gate electrode 13a enters the notch portion 22. Further, since the connection lead 31 is also disposed on the notch portion 22 of the bus electrode 13b, the bus electrode 13b is solder-bonded to the connection lead 31 by heating the connection lead 31, and the gate electrode end portion in the notch portion 22 is also formed. 21 is solder-bonded to the connection lead 31, and the bus electrode 13b and the gate electrode 13a are electrically connected through the connection lead 31. Thereby, the electric power generated by the solar battery cell 11 can be collected from the bus electrode 13b and the gate electrode end portion 21 to the connection lead 31.
此處,如第4圖所示,配置在缺口部22之柵電極13a的柵電極端部21、與匯流電極13b之在匯流電極13b的寬度方向之重疊寬度26,係設定為比在匯流電極13b的寬度方向上在上述的單晶矽基板12的受光面上印刷糊材料時之柵電極13a及匯流電極13b各別的印刷位置之偏差的容許值及印刷長度的偏差之容許值之總和值,再加上連接引線31配置位置在匯流電極13b上的偏差之容許值所得到的值更大之值。藉此,在匯流電極13b的寬度方向上使柵電極端部21一定配置在匯流電極13b的缺口部22之 中,而且可得到柵電極端部21與連接引線31之焊錫接合。配置位置的偏差的容許值,係在匯流電極13b上之在匯流電極13b的寬度方向之源自本來的連接引線31的配置位置的偏差所容許之長度。 Here, as shown in FIG. 4, the overlap width 26 of the gate electrode end portion 21 of the gate electrode 13a of the cutout portion 22 and the bus electrode 13b in the width direction of the bus electrode 13b is set to be larger than that at the bus electrode. In the width direction of 13b, the total value of the allowable value of the deviation between the printing positions of the gate electrode 13a and the bus electrode 13b when the paste material is printed on the light-receiving surface of the single crystal germanium substrate 12, and the tolerance of the printing length Further, a value obtained by the allowable value of the deviation of the position where the connection lead 31 is disposed on the bus electrode 13b is larger. Thereby, the gate electrode end portion 21 is always disposed in the notch portion 22 of the bus electrode 13b in the width direction of the bus electrode 13b. In addition, solder bonding of the gate electrode end portion 21 and the connection lead 31 can be obtained. The allowable value of the deviation of the arrangement position is the length allowed by the deviation of the arrangement position of the original connection lead 31 in the width direction of the bus electrode 13b on the bus electrode 13b.
亦即,在柵電極13a及匯流電極13b各別的印刷位置之偏差的容許值內及印刷長度的偏差之容許值內,即使產生最大偏差,柵電極端部21也會被收納在匯流電極13b的缺口部22內,所以柵電極13a與連接引線31可焊接接合,可抑制集電時之電力損耗。而且,可選擇不同的材料作為柵電極13a的電極材料及匯流電極13b的電極材料。因此,選擇便宜的電極材料時,可廉價地製作太陽電池單元11。進一步,即使選擇相同的電極材料作為柵電極13a的電極材料及匯流電極13b的電極材料時,也可減低電極材料的使用量,並可使太陽電池單元11的價格便宜化。 In other words, even if the maximum deviation occurs within the allowable value of the deviation between the respective printing positions of the gate electrode 13a and the bus electrode 13b, and the maximum deviation occurs, the gate electrode end portion 21 is accommodated in the bus electrode 13b. In the inside of the notch portion 22, the gate electrode 13a and the connection lead 31 can be soldered to each other, and power loss at the time of current collection can be suppressed. Further, different materials may be selected as the electrode material of the gate electrode 13a and the electrode material of the bus electrode 13b. Therefore, when an inexpensive electrode material is selected, the solar cell unit 11 can be produced at low cost. Further, even when the same electrode material is selected as the electrode material of the gate electrode 13a and the electrode material of the bus electrode 13b, the amount of use of the electrode material can be reduced, and the price of the solar cell unit 11 can be made inexpensive.
又,將連接引線31焊接至受光面側電極13之時,加熱連接引線31而連接至受光面側電極13之焊接加熱時,連接引線31的焊錫32會融熔而流入間隙24。因此,連接引線31並不只是與柵電極13a及匯流電極13b的上面接合,如第10及11圖所示,間隙24內的柵電極13a的柵電極端部21的側面及匯流電極13b的側面也透過焊錫32而電性連接,所以可確保有較廣的連接引線31與受光面側電極13之接合面積。藉此,可減低受光面側電極13與連接引線31之間的電阻,可提高源自太陽電池單元11 之電力取出效率。因此,本實施形態1之太陽電池模組係可使太陽電池單元11所產生的電力不會浪費掉,並可有效率地收集電力。 When the connection lead 31 is soldered to the light-receiving surface side electrode 13, when the connection lead 31 is heated and the connection is made to the light-receiving surface side electrode 13, the solder 32 of the connection lead 31 is melted and flows into the gap 24. Therefore, the connection lead 31 is not only bonded to the upper surfaces of the gate electrode 13a and the bus electrode 13b, as shown in Figs. 10 and 11, the side surface of the gate electrode end portion 21 of the gate electrode 13a in the gap 24 and the side surface of the bus electrode 13b Since it is electrically connected by the solder 32, the joint area of the wide connection lead 31 and the light-receiving surface side electrode 13 can be ensured. Thereby, the electric resistance between the light-receiving surface side electrode 13 and the connection lead 31 can be reduced, and the solar cell unit 11 can be improved. Power extraction efficiency. Therefore, in the solar battery module of the first embodiment, the electric power generated by the solar battery unit 11 can be prevented from being wasted, and electric power can be efficiently collected.
又,鍍覆在連接引線31之焊錫32的量較少,融熔的焊錫32未流入間隙24之時,柵電極13a與連接引線31、及匯流電極13b與連接引線31被焊錫接合,可收集太陽電池單元11所產生的電力。此外,也可事先在匯流電極13b上塗佈焊膏(soldering paste)等之導電材料,亦可以焊錫或焊膏填滿間隙24。 Further, when the amount of the solder 32 plated on the connection lead 31 is small, and the molten solder 32 does not flow into the gap 24, the gate electrode 13a and the connection lead 31, and the bus electrode 13b and the connection lead 31 are solder-bonded, and can be collected. The electric power generated by the solar battery unit 11. Further, a conductive material such as a soldering paste may be applied to the bus electrode 13b in advance, or the gap 24 may be filled with solder or solder paste.
第13圖係顯示本發明的實施形態1相關之受光面側電極13的形狀之變形例之主要部分平面圖。如第13圖所示,匯流電極13b的缺口部22的形狀亦可設為在匯流電極13b的寬度方向貫通匯流電極13b之形狀。亦即,匯流電極13b亦可在匯流電極13b的長度方向被分割。此時,在柵電極13a與匯流電極13b之間設置間隙24,且設為柵電極端部21被收納在缺口部22內之配置。形成如此的受光面側電極13之時,也可得到與第4圖所示的受光面側電極13的情形一樣的效果。再者,將柵電極13a及匯流電極13b都形成為被分割之形狀,可抑制柵電極13a及匯流電極13b的電極材料之使用量。 Fig. 13 is a plan view showing a principal part of a modification of the shape of the light-receiving surface side electrode 13 according to the first embodiment of the present invention. As shown in Fig. 13, the shape of the notch portion 22 of the bus electrode 13b may be a shape that penetrates the bus electrode 13b in the width direction of the bus electrode 13b. That is, the bus electrode 13b may be divided in the longitudinal direction of the bus electrode 13b. At this time, a gap 24 is provided between the gate electrode 13a and the bus electrode 13b, and the gate electrode end portion 21 is placed in the notch portion 22. When such a light-receiving surface side electrode 13 is formed, the same effect as in the case of the light-receiving surface side electrode 13 shown in Fig. 4 can be obtained. Further, both the gate electrode 13a and the bus electrode 13b are formed into a divided shape, and the amount of use of the electrode material of the gate electrode 13a and the bus electrode 13b can be suppressed.
第14圖係顯示本發明的實施形態1相關之受光面側電極13的形狀之另一個變形例之主要部分平面圖。第14圖所示之受光面側電極13係匯流電極13b的形狀為與第13圖相同。另一方面,柵電極13a係在柵電極 13a的伸長方向上不中斷而連續形成。因此,在缺口部22內之柵電極13a的伸長方向,係對於柵電極端部21的收納長度,不須要設為考量印刷位置的偏移的容許值及印刷長度的偏移的容許值及連接引線31的配置位置之偏差的容許值之後的尺寸。 Fig. 14 is a plan view showing a principal part of another modification of the shape of the light-receiving surface side electrode 13 according to the first embodiment of the present invention. The shape of the light-receiving surface side electrode 13 shown in Fig. 14 as the bus electrode 13b is the same as that of Fig. 13. On the other hand, the gate electrode 13a is tied to the gate electrode The direction of elongation of 13a is continuously formed without interruption. Therefore, in the extending direction of the gate electrode 13a in the notch portion 22, the storage length of the gate electrode end portion 21 is not required to be considered as an allowable value of the offset of the printing position and an allowable value of the offset of the printing length and the connection. The size after the allowable value of the deviation of the arrangement position of the lead wires 31.
上述說明中,雖以受光面側電極13為例進行說明,但在柵電極與匯流電極交叉而配置成梳形形狀之背面側電極,也可得到與上述相同之效果。 In the above description, the light-receiving surface side electrode 13 will be described as an example. However, the same effect as described above can be obtained by the back side electrode in which the gate electrode and the bus electrode are arranged to have a comb shape.
另一方面,不具有本實施形態1之受光面側電極13的形狀之受光面側電極時,亦即,在柵電極及匯流電極之間沒有間隙之受光面側電極時,分開柵電極及匯流電極之印刷而以各別印刷形成時,在矽基板的受光面側的全面形成柵電極之後,然後再印刷形成匯流電極。此時,因柵電極與匯流電極重疊,所以在柵電極與匯流電極重疊的部分會產生凹凸部。因此,將連接引線焊接到匯流電極上之時,只凹凸部的凸部焊接接合至連接引線,藉由匯流電極與連接引線的焊接合積變小,匯流電極與連接引線之間的電阻會增大,而造成電力損耗。 On the other hand, when the light-receiving surface side electrode having the shape of the light-receiving surface side electrode 13 of the first embodiment is not provided, that is, when the light-receiving surface side electrode having no gap between the gate electrode and the bus electrode is separated, the gate electrode and the confluence are separated. When the electrodes are printed and formed by separate printing, the gate electrodes are formed on the light-receiving surface side of the ruthenium substrate, and then the bus electrodes are formed by printing. At this time, since the gate electrode and the bus electrode overlap each other, uneven portions are formed in a portion where the gate electrode and the bus electrode overlap. Therefore, when the connection lead is soldered to the bus electrode, only the convex portion of the uneven portion is solder-bonded to the connection lead, and the solder joint of the bus electrode and the connection lead becomes smaller, and the resistance between the bus electrode and the connection lead increases. Large, causing power loss.
又,分開印刷柵電極及匯流電極,且為了減少柵電極與匯流電極的重疊區域,即使將柵電極的長度方向的端面與匯流電極的側面予以連接之時,在匯流電極之兩側面部匯流電極會重疊於柵電極的端部周邊上而產生凹凸。因此,與上述同樣,只凹凸部的凸部焊接接合至連接引線而匯流電極與連接引線的焊接合積變小,藉此,匯流 電極與連接引線之間的電阻會增大,而造成電力損耗。 Further, the gate electrode and the bus electrode are separately printed, and in order to reduce the overlapping area of the gate electrode and the bus electrode, even when the end surface of the gate electrode in the longitudinal direction is connected to the side surface of the bus electrode, the electrode is connected to the sides of the bus electrode. Concavities and convexities are generated by overlapping the periphery of the end portion of the gate electrode. Therefore, similarly to the above, only the convex portions of the uneven portions are welded and joined to the connection leads, and the welding of the bus electrodes and the connection leads is reduced, whereby the confluence is small. The electrical resistance between the electrode and the connecting lead increases, resulting in power loss.
如上述,在本發明的實施形態1中,在柵電極13a及匯流電極13b之間設置間隙24,即使分開印刷柵電極13a及匯流電極13b,柵電極13a及匯流電極13b也不會重疊。因此,即使在分別進行柵電極13a及匯流電極13b的網版印刷時,也可使匯流電極13b的表面平坦化,不會在匯流電極13b上產生電極互相重疊的凹凸部,可確保匯流電極13b及連接引線31有穩定的較廣的焊接接合面積,且柵電極13a及連接引線31也會被焊接接合。藉此,可以低耗損收集太陽電池單元11所產生的電力。 As described above, in the first embodiment of the present invention, the gap 24 is provided between the gate electrode 13a and the bus electrode 13b, and even if the gate electrode 13a and the bus electrode 13b are separately printed, the gate electrode 13a and the bus electrode 13b do not overlap. Therefore, even when screen printing of the gate electrode 13a and the bus electrode 13b is performed, the surface of the bus electrode 13b can be flattened, and uneven portions where the electrodes overlap each other can be formed on the bus electrode 13b, and the bus electrode 13b can be secured. And the connection lead 31 has a stable and wide solder joint area, and the gate electrode 13a and the connection lead 31 are also soldered. Thereby, the electric power generated by the solar battery unit 11 can be collected with low loss.
又,在本發明的實施形態1中,因為在匯流電極13b設置缺口部22而在柵電極13a及匯流電極13b之間設置間隙24,所以可減低電極材料的使用量,減低製造成本而實現太陽電池單元11廉價化。而且,在受光面側電極13與連接引線31的接合上,即使額外使用焊膏等的導電材料時,相對於匯流電極13b的電極材料為銀等之高價的材料,焊錫材料非常便宜,所以可比一般的太陽電池單元的電極更低成本地形成電極。 Further, in the first embodiment of the present invention, since the gap 24 is provided between the gate electrode 13a and the bus electrode 13b by providing the notch portion 22 in the bus electrode 13b, the amount of use of the electrode material can be reduced, and the manufacturing cost can be reduced to realize the sun. The battery unit 11 is inexpensive. Further, even when a conductive material such as solder paste is additionally used for bonding the light-receiving surface side electrode 13 and the connection lead 31, the electrode material of the bus electrode 13b is a high-priced material such as silver, and the solder material is very inexpensive, so that it is comparable. The electrodes of a typical solar cell unit form electrodes at a lower cost.
因此,根據本發明的實施形態1,可廉價地實現以低損耗收集所產生的電力之太陽電池單元及太陽電池模組。 Therefore, according to the first embodiment of the present invention, the solar battery unit and the solar battery module that collect the generated electric power with low loss can be realized at low cost.
本實施形態2係針對實施形態1中的受光面側電極13 的變形例進行說明。在以下所示的圖中,與實施形態1同樣的構件係賦予相同的符號。第15圖係放大顯示本發明的實施形態2之太陽電池單元的柵電極13a的形狀之主要部分平面圖。第16圖係放大顯示本發明的實施形態2之太陽電池單元的匯流電極13b的形狀之主要部分平面圖。第17圖係放大顯示本發明的實施形態2之太陽電池單元中的受光面側電極13之主要部分平面圖。第18圖係本發明的實施形態2之太陽電池單元中的受光面側電極13的主要部分剖面圖,第17圖中的線分XVIII-XVIII的主要部分剖面圖。 In the second embodiment, the light-receiving surface side electrode 13 in the first embodiment is used. The modification will be described. In the drawings shown below, the same members as those in the first embodiment are denoted by the same reference numerals. Fig. 15 is a plan view showing the principal part of the shape of the gate electrode 13a of the solar battery cell according to the second embodiment of the present invention. Fig. 16 is a plan view showing the principal part of the shape of the bus electrode 13b of the solar battery cell according to the second embodiment of the present invention. Fig. 17 is a plan view showing a principal part of the light-receiving surface side electrode 13 in the solar battery cell according to the second embodiment of the present invention. Fig. 18 is a cross-sectional view showing a principal part of a light-receiving surface side electrode 13 in a solar battery cell according to a second embodiment of the present invention, and a cross-sectional view of a main portion taken along line XVIII-XVIII in Fig. 17.
為了以低損耗地收集柵電極13a所收集到的電力,必須將電力收集到截面積比柵電極13a更大之匯流電極13b,再收集到截面積比匯流電極13b更大之連接引線31。因此,本實施形態2中之柵電極13a係如第15圖所示,在長度方向分割而形成,且被分割之各別的端部之柵電極端部41係相向。而且,柵電極端部41係形成為以與柵電極13a的長度方向正交之方向,亦即匯流電極13b的長度方向為其長度方向之矩形形狀,柵電極13a係在單晶矽基板12的面方向具有T字形狀。亦即,在匯流電極13b的長度方向之柵電極端部41的寬度之柵電極端部寬度43,係形成為比柵電極13a的其他部分的柵電極寬度42更寬。 In order to collect the electric power collected by the gate electrode 13a with low loss, it is necessary to collect electric power to the bus electrode 13b having a larger cross-sectional area than the gate electrode 13a, and collect the connection lead 31 having a larger cross-sectional area than the bus electrode 13b. Therefore, as shown in Fig. 15, the gate electrode 13a in the second embodiment is formed by being divided in the longitudinal direction, and the gate electrode end portions 41 of the divided end portions are opposed to each other. Further, the gate electrode end portion 41 is formed in a direction orthogonal to the longitudinal direction of the gate electrode 13a, that is, a rectangular shape in which the longitudinal direction of the bus electrode 13b is a longitudinal direction thereof, and the gate electrode 13a is formed on the single crystal germanium substrate 12. The plane direction has a T shape. That is, the gate electrode end width 43 of the width of the gate electrode end portion 41 in the longitudinal direction of the bus electrode 13b is formed to be wider than the gate electrode width 42 of the other portion of the gate electrode 13a.
另外,如第16圖所示,本實施形態2中之匯流電極13b係在側面23設有缺口部44。缺口部44係從匯流電極13b的側面23在匯流電極13b的短邊方向,亦即寬 度方向往內側凹入成細長形狀,且在匯流電極13b的厚度方向貫通。缺口部44的伸長方向係在單晶矽基板12的面方向與柵電極13a的伸長方向相同。 Further, as shown in Fig. 16, the bus electrode 13b in the second embodiment is provided with a notch portion 44 on the side surface 23. The notch portion 44 is from the side surface 23 of the bus electrode 13b in the short side direction of the bus electrode 13b, that is, the width The width direction is recessed into the elongated shape on the inner side, and penetrates in the thickness direction of the bus electrode 13b. The direction in which the notch portion 44 is elongated is the same as the direction in which the gate electrode 13a extends in the surface direction of the single crystal germanium substrate 12.
而且,缺口部44係具有T字形狀,該T字形狀係在單晶矽基板12的面方向對應於柵電極端部41的形狀,且具有比柵電極端部41的外形尺寸更大的尺寸。亦即,缺口部44係在寬度方向的內側之部分具有在匯流電極13b的長度方向伸長之矩形形狀的寬闊缺口部45。寬闊缺口部45係在匯流電極13b的長度方向之寬度的寬闊缺口部寬度46比缺口部44的其他部分的寬度之缺口部寬度47更寬,且比柵電極端部寬部43更寬。以柵電極端部41被收納在寬闊缺口部45內之狀態,將柵電極13a配置在缺口部44內形成受光面側電極13。 Further, the notch portion 44 has a T-shape which corresponds to the shape of the gate electrode end portion 41 in the surface direction of the single crystal germanium substrate 12, and has a larger size than the outer shape of the gate electrode end portion 41. . In other words, the notch portion 44 has a rectangular wide notch portion 45 that is elongated in the longitudinal direction of the bus electrode 13b in a portion on the inner side in the width direction. The wide notch portion 45 has a wide notch width 46 which is wider in the longitudinal direction of the bus electrode 13b than the notch width 47 of the width of the other portion of the notch portion 44, and is wider than the gate electrode end portion 43. In a state in which the gate electrode end portion 41 is housed in the wide notch portion 45, the gate electrode 13a is disposed in the notch portion 44 to form the light-receiving surface side electrode 13.
另外,在單晶矽基板12的面內,在柵電極13a與匯流電極13b之間如第17圖所示設有間隙24。藉由設置間隙24,柵電極13a與匯流電極13b不會直接接觸。因此,柵電極13a與匯流電極13b不會重疊,在匯流電極13b的表面可防止因柵電極13a與匯流電極13b之重疊所致之凹凸的發生。 Further, in the plane of the single crystal germanium substrate 12, a gap 24 is provided between the gate electrode 13a and the bus electrode 13b as shown in Fig. 17. By providing the gap 24, the gate electrode 13a and the bus electrode 13b are not in direct contact. Therefore, the gate electrode 13a and the bus electrode 13b do not overlap each other, and the occurrence of irregularities due to the overlap of the gate electrode 13a and the bus electrode 13b can be prevented on the surface of the bus electrode 13b.
又,因為匯流電極13b具有缺口部44,該缺口部44具有寬闊缺口部45,可抑制匯流電極13b的材料的使用量。 Further, since the bus electrode 13b has the notch portion 44, the notch portion 44 has the wide notch portion 45, and the amount of material used for the bus electrode 13b can be suppressed.
使柵電極端部寬度43設為比柵電極寬度42更大之值,依照上述之印刷位置的偏差之容許值及印刷寬 度的偏差之容許值及間隙24的尺寸之關係,柵電極13a與匯流電極13b之相向的側面彼此間會變得容易接觸。 The gate electrode end width 43 is set to a value larger than the gate electrode width 42, and the allowable value and print width of the deviation of the printing position are as described above. The relationship between the allowable value of the deviation of the degree and the size of the gap 24 makes it easy for the side faces of the gate electrode 13a and the bus electrode 13b to face each other.
第19圖係放大顯示柵電極13a與匯流電極13b在匯流電極13b的寬度方向相接觸時之受光面側電極13之主要部分平面圖。例如第19圖所示,柵電極13a與匯流電極13b在匯流電極13b的寬度方向,印刷位置的偏差之容許值內及印刷寬度之偏差的容許值內偏差而被印刷形時,柵電極端部41的右側的側面與寬闊缺口部45的右側之側面會接觸。 Fig. 19 is a plan view showing, in an enlarged manner, a main portion of the light-receiving surface side electrode 13 when the gate electrode 13a and the bus electrode 13b are in contact with each other in the width direction of the bus electrode 13b. For example, as shown in FIG. 19, when the gate electrode 13a and the bus electrode 13b are printed in a width direction of the bus electrode 13b in the width direction, the tolerance of the printing position, and the tolerance of the printing width, the gate electrode end portion is printed. The side surface on the right side of the 41 is in contact with the side surface on the right side of the wide notch portion 45.
接著,在柵電極13b的寬度方向及匯流電極13b的長度方向之兩方向上可引起同樣的現象。因此,在所有的柵電極端部41,與匯流電極13b的寬闊缺口部45接觸的可能性提高。另外,即使柵電極13a與匯流電極13b不接觸時,柵電極13a及匯流電極13b亦會與連接引線31焊接接合,所以不會發生電力損耗。 Next, the same phenomenon can be caused in both the width direction of the gate electrode 13b and the longitudinal direction of the bus electrode 13b. Therefore, the possibility of contact with the wide notch portion 45 of the bus electrode 13b at all the gate electrode end portions 41 is improved. Further, even when the gate electrode 13a and the bus electrode 13b are not in contact, the gate electrode 13a and the bus electrode 13b are soldered to the connection lead 31, so that power loss does not occur.
第20圖係放大顯示本發明的實施形態2之太陽電池單元中的其他受光面側電極13之主要部分平面圖。如第20圖所示,即使將柵電極端部41及寬闊缺口部45的形狀設為圓形,也與柵電極端部41為矩形之情形同樣,可得到上述的效果。 Fig. 20 is a plan view showing the main part of the other light-receiving surface side electrode 13 in the solar battery cell according to the second embodiment of the present invention. As shown in Fig. 20, even if the shape of the gate electrode end portion 41 and the wide notch portion 45 is circular, the above-described effects can be obtained similarly to the case where the gate electrode end portion 41 is rectangular.
根據本發明的實施形態2,除了上述的實施形態1的效果之外,使柵電極端部41的形狀設為矩形或圓形,並使匯流電極13b的寬闊缺口部45對應於柵電極端部41的形狀且具有比柵電極端部41的外形尺寸更大的尺寸 之形狀,而可提高柵電極13a與匯流電極13b之接觸的可能性。藉此,使柵電極13a與匯流電極13b的接觸面積增加,可實現柵電極13a與匯流電極13b之間的電力取出效率優異之太陽電池單元及太陽電池模組。 According to the second embodiment of the present invention, in addition to the effects of the first embodiment described above, the shape of the gate electrode end portion 41 is made rectangular or circular, and the wide notch portion 45 of the bus electrode 13b corresponds to the end portion of the gate electrode. 41 shape and having a larger size than the outer dimension of the gate electrode end 41 The shape is increased to increase the possibility of contact between the gate electrode 13a and the bus electrode 13b. Thereby, the contact area between the gate electrode 13a and the bus electrode 13b is increased, and the solar cell unit and the solar cell module excellent in power extraction efficiency between the gate electrode 13a and the bus electrode 13b can be realized.
以上實施形態所揭示的構成,係表示本發明的內容之一例,亦可與別的公知之技術組合,且在不脫離本發明的主旨之範圍內,亦可將構成的一部分予以省略或加以變更。 The configuration disclosed in the above embodiments is an example of the present invention, and may be combined with other known techniques, and a part of the configuration may be omitted or changed without departing from the gist of the present invention. .
12a‧‧‧n型雜質擴散層 12a‧‧‧n type impurity diffusion layer
13‧‧‧受光面側電極 13‧‧‧Photon side electrode
13a‧‧‧柵電極 13a‧‧‧ gate electrode
13b‧‧‧匯流電極 13b‧‧‧Concurrent electrode
21‧‧‧柵電極端部 21‧‧‧ gate electrode end
22‧‧‧缺口部 22‧‧‧ nicks
23‧‧‧側面 23‧‧‧ side
24‧‧‧間隙 24‧‧‧ gap
26‧‧‧重疊寬度 26‧‧‧Overlap width
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