TW201632998A - Data correcting apparatus, drawing apparatus, inspection apparatus, data correcting method, drawing method, inspection method and recording medium - Google Patents

Data correcting apparatus, drawing apparatus, inspection apparatus, data correcting method, drawing method, inspection method and recording medium Download PDF

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TW201632998A
TW201632998A TW104136892A TW104136892A TW201632998A TW 201632998 A TW201632998 A TW 201632998A TW 104136892 A TW104136892 A TW 104136892A TW 104136892 A TW104136892 A TW 104136892A TW 201632998 A TW201632998 A TW 201632998A
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etching
characteristic
data
group
positions
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TW104136892A
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TWI620032B (en
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山田亮
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思可林集團股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10004—Still image; Photographic image
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30141—Printed circuit board [PCB]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

An etching characteristic memory (212) of a data correcting part (21) storages an etching characteristic as target etching characteristic, for each of a plurality of target positions on an object. A characteristic group obtaining part (213) makes target positions corresponding to similar target etching characteristics to be included in one characteristic group, to divide the plurality of target positions into a predetermined number of characteristic groups which is lower than the plurality of target positions. A divided data correction part (217) divides design data of a pattern which is formed on the object by etching into a plurality of divided data pieces corresponding to a plurality of divided areas which are set on the object, and each divided data piece is corrected on the basis of a etching characteristic representing a characteristic group which a closest target position to a divided area corresponding to the divided data piece belongs to. It is therefore possible to efficiently perform high accuracy etching correction.

Description

資料修正裝置、描繪裝置、檢查裝置、資料修正方法、描繪方法、檢查方法及記錄媒體 Data correction device, drawing device, inspection device, data correction method, drawing method, inspection method, and recording medium

本發明係關於一種對藉由蝕刻而形成於對象物上之圖案之設計資料進行修正之技術。 The present invention relates to a technique for correcting design data of a pattern formed on an object by etching.

先前，於半導體基板或印刷基板、或者電漿顯示裝置或液晶顯示裝置用玻璃基板等(以下稱為「基板」)之製程中，對基板實施各種處理。例如，藉由對於表面上形成有抗蝕劑之圖案之基板實施蝕刻而於基板上形成配線圖案。於該蝕刻中，藉由圖案配置之疏密或圖案之大小等，而存在形成於基板上之圖案之形狀與設計資料不同之情形。 Conventionally, various processes have been performed on a substrate in a semiconductor substrate or a printed substrate, or a plasma display device or a glass substrate for a liquid crystal display device (hereinafter referred to as a "substrate"). For example, a wiring pattern is formed on a substrate by etching the substrate on which a pattern of a resist is formed. In the etching, the shape of the pattern formed on the substrate is different from the design data by the density of the pattern arrangement or the size of the pattern.

於日本專利第3074675號公報中，揭示有如下技術，即藉由利用電子束直接描繪裝置於基板上形成抗蝕劑圖案，並利用電漿蝕刻裝置進行蝕刻而形成圖案。另外，提出有於根據圖案之設計資料而產生電子束直接描繪用資料之處理中，包含修正由微負載效應(micro loading effect)所致之蝕刻後之圖案尺寸之變化之處理。 Japanese Patent No. 3074675 discloses a technique in which a resist pattern is formed on a substrate by an electron beam direct drawing device, and etching is performed by a plasma etching device to form a pattern. Further, in the process of generating the electron beam direct drawing data based on the design data of the pattern, there is proposed a process of correcting the change in the pattern size after etching due to the micro loading effect.

於日本專利第4274784號公報中，提出有使用蝕刻後之基板之圖像資料及設計資料，產生表示為了獲得所需之蝕刻後基板而必須如何 修正設計資料之尺寸調整規則(resizing rule)。 In Japanese Patent No. 4274784, it is proposed to use image data and design information of an etched substrate to generate a representation of how the substrate must be etched in order to obtain the desired etched substrate. Correct the resizing rule of the design data.

於日本專利特開2008-134512號公報中，揭示有如下方法：於製作光罩時，針對每一圖案間之間隔(距離)而指定用以修正過蝕刻之修正值。另外，提出有於直線圖案與圓弧圖案對向之情形時，對該對向之部位施加進一步之修正。 Japanese Laid-Open Patent Publication No. 2008-134512 discloses a method of correcting an over-etching correction value for each interval (distance) between patterns when fabricating a photomask. Further, when it is proposed that the straight line pattern and the circular arc pattern face each other, a further correction is applied to the opposing portion.

於日本專利特開2013-12562號公報中，揭示有如下技術：於一面根據導體圖案之設計資料而考慮側蝕刻一面製作輪廓形狀(導體圖案之外形形狀)時，基於鄰接之輪廓形狀間之距離而設定修正值。 In Japanese Laid-Open Patent Publication No. 2013-12562, there is disclosed a technique in which a contour shape (a shape of a conductor pattern) is formed in consideration of side etching according to design data of a conductor pattern, and a distance between adjacent contour shapes is used. And set the correction value.

日本專利特開2013-250101號公報涉及一種藉由蝕刻而形成之配線圖案之缺陷檢查。於該缺陷檢查中，自形成於基板之表面上之測定用圖案測定蝕刻資訊(蝕刻曲線)，並使用該蝕刻曲線對設計資料進行蝕刻模擬而產生檢查資料。然後，藉由將基板上之配線圖案之圖像資料與檢查資料對照而檢測出配線圖案之缺陷。於本文獻中，提出有於設定於印刷基板之上表面之複數個檢查區域分別配置1個測定用圖案，且獲取各檢查區域用之蝕刻曲線。於檢查區域中包含複數個相同之單部分圖案，對這些複數個單部分圖案基於該檢查區域用之蝕刻曲線而同樣地進行修正。 Japanese Laid-Open Patent Publication No. 2013-250101 relates to a defect inspection of a wiring pattern formed by etching. In the defect inspection, etching information (etching curve) is measured from the measurement pattern formed on the surface of the substrate, and the design data is subjected to etching simulation using the etching curve to generate inspection data. Then, the defect of the wiring pattern is detected by comparing the image data of the wiring pattern on the substrate with the inspection data. In this document, it is proposed to arrange one measurement pattern for each of a plurality of inspection regions set on the upper surface of the printed substrate, and to obtain an etching curve for each inspection region. A plurality of identical single-part patterns are included in the inspection region, and the plurality of single-part patterns are similarly corrected based on the etching curve for the inspection region.

近年來，於進行對基板之蝕刻之裝置中，為了提高生產性而對配置有複數個相同之部分(piece)(圖案)之大型基板進行蝕刻。因此，蝕刻特性根據基板上之位置而不同，即便係對相同部分之蝕刻，亦存在蝕刻結果不同之情形。於該情形時，亦考慮針對各部分獲取蝕刻特性，並基於該蝕刻特性而進行資料之修正(蝕刻修正)，但對所有部分之蝕刻修正需要較長時間。 In recent years, in an apparatus for etching a substrate, a large substrate in which a plurality of identical pieces (patterns) are arranged is etched in order to improve productivity. Therefore, the etching characteristics differ depending on the position on the substrate, and even if the same portion is etched, there are cases where the etching results are different. In this case, it is also considered to obtain etching characteristics for each portion, and to correct the data (etching correction) based on the etching characteristics, but it takes a long time to perform etching correction for all the portions.

本發明適於對藉由蝕刻而形成於對象物上之圖案之設計資料進行修正之資料修正裝置，其目的在於效率佳地進行高精度之蝕刻修 正。 The present invention is suitable for a data correction device for correcting design data of a pattern formed on an object by etching, and the object thereof is to perform high-precision etching repair with high efficiency. positive.

本發明之資料修正裝置包括：設計資料記憶部，其記憶藉由蝕刻而形成於對象物上之圖案之設計資料；蝕刻特性記憶部，其將針對上述對象物上之複數個對象位置之各者之蝕刻特性作為對象蝕刻特性，而記憶針對上述複數個對象位置之複數個對象蝕刻特性；特性群組獲取部，其藉由將與相互類似之對象蝕刻特性對應之對象位置包含於1個特性群組中，而將上述複數個對象位置分成少於上述複數個對象位置少之特定數量之特性群組；及分割資料修正部，其將上述設計資料分割成與設定於上述對象物上之複數個分割區域對應之複數個分割資料，並基於代表與上述各分割資料對應之分割區域之最接近之對象位置所屬之一個特性群組之蝕刻特性而修正各分割資料。 The data correction device of the present invention includes: a design data storage unit that memorizes design data of a pattern formed on the object by etching; and an etching characteristic memory unit that targets each of a plurality of object positions on the object The etching characteristic is used as a target etching characteristic, and a plurality of object etching characteristics for the plurality of object positions are memorized; and the characteristic group acquiring unit includes the object position corresponding to the object etching characteristics similar to each other in one characteristic group In the group, the plurality of object positions are divided into a plurality of characteristic groups having a smaller number of the plurality of object positions; and the segmentation data correction unit divides the design data into a plurality of pieces set on the object The plurality of divided data corresponding to the divided region are corrected, and each of the divided data is corrected based on an etching characteristic of one of the characteristic groups to which the closest target position of the divided region corresponding to each of the divided data belongs.

根據本發明，能夠效率佳地進行高精度之蝕刻修正。 According to the present invention, it is possible to efficiently perform high-accuracy etching correction.

於本發明之一較佳形態中，上述特性群組獲取部包括：群組特性獲取部，其獲取與各特性群組建立關聯之蝕刻特性作為群組蝕刻特性；及群組化處理部，其基於表示各對象蝕刻特性與上述各特性群組之上述群組蝕刻特性之類似度之值，而進行將與上述各對象蝕刻特性對應之對象位置包含於上述特定數量之特性群組之任一者之群組化處理。 In a preferred aspect of the present invention, the characteristic group acquiring unit includes: a group characteristic acquiring unit that acquires an etching characteristic associated with each characteristic group as a group etching characteristic; and a grouping processing unit. And performing, according to a value indicating the similarity between the etching characteristics of the respective objects and the group etching characteristics of the respective characteristic groups, the object position corresponding to each of the object etching characteristics is included in any one of the specific number of characteristic groups Grouping processing.

於該情形時，更佳為，上述特性群組獲取部更包括重複控制部，該重複控制部係使利用上述群組特性獲取部之上述群組蝕刻特性之獲取、及利用上述群組化處理部之上述群組化處理重複進行，直至滿足特定條件為止，且上述群組特性獲取部根據藉由前一上述群組化處理而包含於上述各特性群組中之對象位置之對象蝕刻特性，而求出上述各特性群組之上述群組蝕刻特性。 In this case, it is preferable that the characteristic group acquiring unit further includes a repeating control unit that acquires the group etching characteristic by the group characteristic acquiring unit and uses the grouping processing The grouping processing of the portion is repeated until the specific condition is satisfied, and the group characteristic acquiring unit selects an object etching characteristic of the object position included in each of the characteristic groups by the previous grouping processing. The group etching characteristics of the respective characteristic groups are obtained.

於本發明之另一較佳形態中，上述設計資料之上述複數個分割資料各自表示之分割圖案為相同。 In another preferred embodiment of the present invention, the plurality of divided data of the design data respectively indicate that the division patterns are the same.

於本發明之一態樣中，資料修正裝置更包括對象蝕刻特性獲取部，該對象蝕刻特性獲取部係針對上述對象物上之複數個基準位置之各者而預先獲取基準蝕刻特性，並針對上述複數個對象位置之各者，基於各對象位置與上述複數個基準位置之位置關係而對上述複數個基準位置之複數個基準蝕刻特性進行加權，並且基於進行加權後之上述複數個基準蝕刻特性而求出上述各對象位置之上述對象蝕刻特性。 In one aspect of the invention, the data correction device further includes a target etching characteristic acquiring unit that acquires a reference etching characteristic in advance for each of a plurality of reference positions on the object, and Each of the plurality of target positions weights a plurality of reference etching characteristics of the plurality of reference positions based on a positional relationship between each of the target positions and the plurality of reference positions, and based on the plurality of reference etching characteristics after weighting The object etching characteristics of the respective target positions are obtained.

於本發明之另一態樣中，資料修正裝置更包括群組數量決定部，該群組數量決定部係針對複數個臨時群組數量之各者，使上述特性群組獲取部進行分組，求出表示代表各特性群組之蝕刻特性、與屬於上述各特性群組之所有對象位置之對象蝕刻特性之差異度之值之所有特性群組之和作為評估值，並將上述評估值為特定閾值以下之最小之臨時群組數量決定為上述特定數量。 In another aspect of the present invention, the data correction device further includes a group number determining unit that groups the characteristic group acquiring unit for each of the plurality of temporary group numbers. A sum of all characteristic groups representing values of the difference between the etching characteristics of the respective characteristic groups and the object etching characteristics of all the object positions belonging to the respective characteristic groups is taken as an evaluation value, and the evaluation value is a specific threshold value. The minimum number of temporary groups below is determined by the above specific number.

本發明亦適於在對象物上描繪圖案之描繪裝置。本發明之描繪裝置包括：上述資料修正裝置；光源；光調變部，基於藉由上述資料修正裝置修正之設計資料而調變來自上述光源之光；及掃描機構，於對象物上掃描已藉由上述光調變部調變之光。 The present invention is also suitable for a drawing device for drawing a pattern on an object. The drawing device of the present invention includes: the data correcting device; a light source; a light modulation unit that modulates light from the light source based on design data corrected by the data correcting device; and a scanning mechanism that scans the object Light modulated by the above-described light modulation portion.

本發明亦適於檢查藉由蝕刻而形成於對象物上之圖案之檢查裝置。本發明之檢查裝置包括：上述資料修正裝置；實際圖像記憶部，其記憶藉由蝕刻而形成於對象物上之圖案之圖像資料即檢查圖像資料；及缺陷檢測部，其藉由對已利用上述資料修正裝置修正之設計資料與上述檢查圖像資料進行比較，而檢測形成於上述對象物上之上述圖案之缺陷。 The present invention is also suitable for an inspection apparatus for inspecting a pattern formed on an object by etching. The inspection apparatus of the present invention includes: the data correction device; an actual image storage unit that stores image data of a pattern formed on the object by etching, that is, inspection image data; and a defect detection unit by The design data corrected by the above-described data correction device is compared with the inspection image data to detect the defect of the pattern formed on the object.

本發明亦適於修正藉由蝕刻而形成於對象物上之圖案之設計資料之資料修正方法、於對象物上描繪圖案之描繪方法、檢查藉由蝕刻而形成於對象物上之圖案之檢查方法、及記錄對藉由蝕刻而形成於對象物上之圖案之設計資料進行修正之程式之記錄媒體。 The present invention is also suitable for a data correction method for correcting design data of a pattern formed on an object by etching, a method of drawing a pattern on an object, and an inspection method for inspecting a pattern formed on an object by etching. And a recording medium for recording a program for correcting design data of a pattern formed on the object by etching.

上述目的及其他目的、特徵、形態及優點可藉由以下參照隨附圖式而進行之本發明之詳細說明而變得明瞭。 The above and other objects, features, aspects and advantages of the present invention will become apparent from

1‧‧‧描繪裝置 1‧‧‧Drawing device

1a‧‧‧檢查裝置 1a‧‧‧Inspection device

2‧‧‧資料處理裝置 2‧‧‧ data processing device

3‧‧‧曝光裝置 3‧‧‧Exposure device

8‧‧‧記錄媒體 8‧‧‧Recording media

9‧‧‧基板 9‧‧‧Substrate

9a‧‧‧測試基板 9a‧‧‧Test substrate

21、21a‧‧‧資料修正部 21, 21a ‧ ‧ Data Correction Department

22‧‧‧資料轉換部 22‧‧‧Data Conversion Department

25‧‧‧實際圖像記憶部 25‧‧‧ Actual Image Memory Department

26‧‧‧缺陷檢測部 26‧‧‧Defect Detection Department

31‧‧‧描繪控制器 31‧‧‧Drawing controller

32‧‧‧載台 32‧‧‧ stage

33‧‧‧光出射部 33‧‧‧Lighting Department

35‧‧‧掃描機構 35‧‧‧Scanning agency

80‧‧‧程式 80‧‧‧ program

83‧‧‧設計圖案 83‧‧‧ design pattern

84‧‧‧部分圖案 84‧‧‧Partial pattern

93‧‧‧測試圖案 93‧‧‧ test pattern

95‧‧‧特性獲取用圖案 95‧‧‧Characteristic acquisition pattern

201‧‧‧CPU 201‧‧‧CPU

202‧‧‧ROM 202‧‧‧ROM

203‧‧‧RAM 203‧‧‧RAM

204‧‧‧固定磁盤 204‧‧‧ Fixed disk

205‧‧‧顯示器 205‧‧‧ display

206a‧‧‧鍵盤 206a‧‧‧ keyboard

206b‧‧‧滑鼠 206b‧‧‧mouse

207‧‧‧讀取/寫入裝置 207‧‧‧Read/write device

208‧‧‧通信部 208‧‧‧Communication Department

211‧‧‧設計資料記憶部 211‧‧‧Design Data Memory Department

212‧‧‧蝕刻特性記憶部 212‧‧‧ Etching Characteristics Memory

213‧‧‧特性群組獲取部 213‧‧‧Characteristic Group Acquisition Department

214‧‧‧群組特性獲取部 214‧‧‧Group Feature Acquisition Department

215‧‧‧群組化處理部 215‧‧‧Group Processing Department

216‧‧‧重複控制部 216‧‧‧Repetitive Control Department

217‧‧‧分割資料修正部 217‧‧‧Divided Data Correction Department

218‧‧‧對象蝕刻特性獲取部 218‧‧‧Object etching characteristics acquisition unit

219‧‧‧群組數量決定部 219‧‧‧Group Quantity Determination Department

331‧‧‧光源 331‧‧‧Light source

332‧‧‧光調變部 332‧‧‧Light Modulation Department

951‧‧‧第1圖形要素群 951‧‧‧1st graphic element group

952‧‧‧第1圖形要素 952‧‧‧1st graphic element

953‧‧‧第2圖形要素群 953‧‧‧2nd graphic element group

954‧‧‧第2圖形要素 954‧‧‧2nd graphical element

A1‧‧‧矩形 A1‧‧‧Rectangle

d‧‧‧差 d‧‧‧Poor

E1、E2‧‧‧蝕刻曲線 E1, E2‧‧‧ etching curve

Et‧‧‧蝕刻量 Et‧‧‧etching amount

P、P1‧‧‧對象位置 P, P1‧‧‧ object location

P0‧‧‧基準位置 P0‧‧‧ reference position

S11~S22‧‧‧步驟 S11~S22‧‧‧Steps

G‧‧‧間隙寬度 G‧‧‧ gap width

x、y‧‧‧方向 x, y‧‧‧ direction

圖1係表示第1實施形態之描繪裝置之構成之圖。 Fig. 1 is a view showing the configuration of a drawing device according to the first embodiment.

圖2係表示資料處理裝置之構成之圖。 Fig. 2 is a view showing the configuration of a data processing device.

圖3係表示資料處理裝置之功能之框圖。 Figure 3 is a block diagram showing the function of the data processing apparatus.

圖4係表示利用描繪裝置之描繪之流程之圖。 Fig. 4 is a view showing a flow of drawing using a drawing device.

圖5係測試基板之俯視圖。 Figure 5 is a plan view of the test substrate.

圖6係將特性獲取用圖案之一部分放大而表示之圖。 Fig. 6 is a view showing a part of the characteristic acquisition pattern partially enlarged.

圖7係將測定圖案之一部分放大而表示之圖。 Fig. 7 is a view showing a part of the measurement pattern enlarged.

圖8係表示蝕刻曲線之圖。 Fig. 8 is a view showing an etching curve.

圖9係表示各特性群組中所包含之對象位置之圖。 Fig. 9 is a view showing the position of an object included in each characteristic group.

圖10係表示設計圖案之圖。 Figure 10 is a diagram showing a design pattern.

圖11係表示測試基板上之基準位置及對象位置之圖。 Fig. 11 is a view showing a reference position and an object position on a test substrate.

圖12係表示第2實施形態之檢查裝置之功能之框圖。 Fig. 12 is a block diagram showing the function of the inspection apparatus of the second embodiment.

圖13係表示利用檢查裝置之檢查之流程之一部分之圖。 Fig. 13 is a view showing a part of the flow of inspection by the inspection device.

圖1係表示本發明之第1實施形態之描繪裝置1之構成之圖。描繪裝置1係藉由對設置於印刷基板、半導體基板、液晶基板等(以下簡稱為「基板9」)之表面上之感光材料即抗蝕劑膜照射光，而直接於抗蝕劑膜上描繪電路圖案等圖像之直接描繪裝置。對利用描繪裝置1描繪有圖案之基板9，於基板處理裝置等(省略圖示)實施顯影、蝕刻。由此，於基板9上形成圖案。對基板9之蝕刻係例如藉由對基板9賦予蝕刻液而進行之濕式蝕刻。此外，作為對基板9之蝕刻，例如亦可進行利用電漿等之乾式蝕刻。 Fig. 1 is a view showing the configuration of the drawing device 1 according to the first embodiment of the present invention. The drawing device 1 directly irradiates a resist film by irradiating light onto a resist film which is a photosensitive material provided on a surface of a printed circuit board, a semiconductor substrate, a liquid crystal substrate or the like (hereinafter simply referred to as "substrate 9"). A direct drawing device for images such as circuit patterns. The substrate 9 on which the pattern is drawn by the drawing device 1 is subjected to development and etching in a substrate processing apparatus or the like (not shown). Thereby, a pattern is formed on the substrate 9. The etching of the substrate 9 is performed by, for example, wet etching by applying an etching liquid to the substrate 9. Further, as the etching of the substrate 9, for example, dry etching using plasma or the like may be performed.

描繪裝置1包括資料處理裝置2、及曝光裝置3。資料處理裝置2 修正描繪於基板9上之圖案之設計資料而產生描繪資料。曝光裝置3基於自資料處理裝置2發送之描繪資料而進行對基板9之描繪(即曝光)。資料處理裝置2與曝光裝置3只要能夠進行兩裝置間之資料之授受，則可物理性地隔開，當然亦可一體地設置。 The drawing device 1 includes a data processing device 2 and an exposure device 3. Data processing device 2 The design data of the pattern drawn on the substrate 9 is corrected to generate a drawing material. The exposure device 3 performs drawing (ie, exposure) of the substrate 9 based on the drawing data transmitted from the material processing device 2. The data processing device 2 and the exposure device 3 can be physically separated as long as the data between the two devices can be transferred, and of course, can be integrally provided.

圖2係表示資料處理裝置2之構成之圖。資料處理裝置2成為一般計算機系統之構成，即包含進行各種運算處理之CPU(Central Processing Unit，中央處理單元)201、記憶基本程式之ROM(Read Only Memory，唯讀記憶體)202、及記憶各種資訊之RAM(Random Access Memory，隨機存取記憶體)203。資料處理裝置2還包含：固定磁盤204，其進行資訊記憶；顯示器205，其進行圖像等各種資訊之顯示；鍵盤206a及滑鼠206b，其等受理來自操作者之輸入；讀取/寫入裝置207，其自光碟、磁碟、磁光碟等計算機能夠讀取之記錄媒體8進行資訊之讀取及寫入；及通信部208，其於與描繪裝置1等其他構成之間收發信號。 FIG. 2 is a view showing the configuration of the data processing device 2. The data processing device 2 is configured as a general computer system, that is, a CPU (Central Processing Unit) 201 that performs various arithmetic processing, a ROM (Read Only Memory) 202 that stores a basic program, and various memories. Information RAM (Random Access Memory) 203. The data processing device 2 further includes: a fixed disk 204 for performing information storage; a display 205 for displaying various information such as images; a keyboard 206a and a mouse 206b for accepting input from an operator; reading/writing The device 207 reads and writes information from a recording medium 8 readable by a computer such as a disk, a magnetic disk, or a magneto-optical disk, and the communication unit 208 transmits and receives signals to and from another configuration such as the drawing device 1.

於資料處理裝置2中，事前經由讀取/寫入裝置207自記錄媒體8讀出程式80並記憶於固定磁盤204。CPU201藉由按照程式80一面利用RAM203或固定磁盤204一面執行運算處理(即藉由計算機執行程式)而實現下述功能。 In the material processing device 2, the program 80 is read from the recording medium 8 via the reading/writing device 207 and stored in the fixed disk 204. The CPU 201 realizes the following functions by performing arithmetic processing (i.e., executing a program by a computer) while using the RAM 203 or the fixed disk 204 in accordance with the program 80.

圖3係表示資料處理裝置2之功能之框圖。於圖3中一併表示有連接於資料處理裝置2之曝光裝置3之構成之一部分(描繪控制器31)。資料處理裝置2包括資料修正部21、及資料轉換部22。資料修正部21對藉由蝕刻而形成於基板9上之圖案之設計資料進行修正。資料修正部21包括設計資料記憶部211、蝕刻特性記憶部212、特性群組獲取部213、及分割資料修正部217。特性群組獲取部213包括群組特性獲取部214、群組化處理部215、及重複控制部216。對資料轉換部22輸入藉由資料修正部21修正後之設計資料(以下稱為「已修正完畢資 料」)。已修正完畢資料通常為多邊形等矢量資料。資料轉換部22係將作為矢量資料之已修正完畢資料轉換成作為名冊資料之描繪資料。此外，於圖3中利用虛線之矩形表示之對象蝕刻特性獲取部218及群組數量決定部219之功能係利用於下述之處理例中。資料處理裝置2之功能可藉由專用之電路實現，亦可局部地使用專用之電路。 FIG. 3 is a block diagram showing the function of the data processing device 2. Also shown in Fig. 3 is a portion (the drawing controller 31) of the configuration of the exposure device 3 connected to the data processing device 2. The data processing device 2 includes a data correction unit 21 and a data conversion unit 22. The data correcting unit 21 corrects the design data of the pattern formed on the substrate 9 by etching. The data correction unit 21 includes a design data storage unit 211, an etching characteristic storage unit 212, a characteristic group acquisition unit 213, and a division data correction unit 217. The characteristic group acquisition unit 213 includes a group characteristic acquisition unit 214, a grouping processing unit 215, and a repetition control unit 216. The data conversion unit 22 inputs the design data corrected by the data correction unit 21 (hereinafter referred to as "corrected capital" material"). The corrected data is usually vector data such as polygons. The data conversion unit 22 converts the corrected data as the vector data into the drawing material as the roster material. In addition, the functions of the target etching characteristic acquisition unit 218 and the group number determination unit 219 indicated by the dotted rectangle in FIG. 3 are used in the following processing examples. The function of the data processing device 2 can be realized by a dedicated circuit, or a dedicated circuit can be used locally.

如圖1所示，曝光裝置3包括描繪控制器31、載台32、光出射部33、及掃描機構35。描繪控制器31控制光出射部33及掃描機構35。載台32係於光出射部33之下方保持基板9。光出射部33包括光源331、及光調變部332。光源331係朝向光調變部332出射雷射光。光調變部332係調變來自光源331之光。藉由光調變部332調變後之光被照射至載台32上之基板9。作為光調變部332，例如可利用二維地排列有複數個光調變元件之DMD(Digital Mirror Device，數位微鏡器件)。光調變部332亦可為一維地排列有複數個光調變元件之調變器等。 As shown in FIG. 1, the exposure device 3 includes a drawing controller 31, a stage 32, a light exiting portion 33, and a scanning mechanism 35. The drawing controller 31 controls the light emitting portion 33 and the scanning mechanism 35. The stage 32 holds the substrate 9 below the light emitting portion 33. The light emitting portion 33 includes a light source 331 and a light modulation portion 332. The light source 331 emits laser light toward the light modulation unit 332. The light modulation portion 332 modulates the light from the light source 331. The light modulated by the light modulation unit 332 is irradiated onto the substrate 9 on the stage 32. As the optical modulation unit 332, for example, a DMD (Digital Mirror Device) in which a plurality of optical modulation elements are two-dimensionally arranged can be used. The light modulation unit 332 may be a modulator or the like in which a plurality of optical modulation elements are arranged one-dimensionally.

掃描機構35使載台32於水平方向移動。具體而言，藉由掃描機構35而使載台32於主掃描方向、及與主掃描方向垂直之副掃描方向移動。由此，藉由光調變部332調變後之光於基板9上被於主掃描方向及副掃描方向掃描。於曝光裝置3中，亦可設置使載台32水平地旋轉之旋轉機構。另外，亦可設置使光出射部33於上下方向移動之升降機構。掃描機構35只要能夠於基板9上掃描來自光出射部33之光，則不一定必須為使載台32移動之機構。例如，亦可藉由掃描機構35而使光出射部33於載台32之上方沿主掃描方向及副掃描方向移動。 The scanning mechanism 35 moves the stage 32 in the horizontal direction. Specifically, the stage 32 is moved by the scanning mechanism 35 in the main scanning direction and the sub-scanning direction perpendicular to the main scanning direction. Thereby, the light modulated by the light modulation unit 332 is scanned on the substrate 9 in the main scanning direction and the sub-scanning direction. In the exposure device 3, a rotation mechanism that rotates the stage 32 horizontally may be provided. Further, an elevating mechanism that moves the light emitting portion 33 in the vertical direction may be provided. The scanning mechanism 35 does not necessarily have to be a mechanism for moving the stage 32 as long as it can scan the light from the light emitting portion 33 on the substrate 9. For example, the light emitting portion 33 may be moved above the stage 32 in the main scanning direction and the sub-scanning direction by the scanning mechanism 35.

接下來，一面參照圖4，一面對利用描繪裝置1之描繪之流程進行說明。首先，對於一主面上形成有抗蝕劑膜之測試用之基板(與下述之步驟S20中之進行描繪之基板9為相同之形狀及大小，以下稱為「測試基板」)，藉由曝光裝置3描繪特定之測試圖案。 Next, a flow of drawing by the drawing device 1 will be described with reference to FIG. First, a substrate for testing on which a resist film is formed on one main surface (the same shape and size as the substrate 9 described in step S20 below, hereinafter referred to as "test substrate") is used. The exposure device 3 depicts a specific test pattern.

圖5係表示藉由曝光裝置3而描繪有測試圖案93之測試基板9a之俯 視圖。實際上，測試基板9a上之測試圖案93能夠藉由實施顯影處理而以抗蝕劑圖案之形式被視認到。此處，將圖5之測試圖案93之各圖形要素之位置、形狀、大小設為與測試圖案用之設計資料(但是，未進行利用資料修正部21之修正)所表示之圖案嚴格一致。即，圖5之測試圖案93亦正係測試圖案用之設計資料所表示之圖案本身。圖5之測試基板9a為矩形，於圖5中，將沿測試基板9a之相互正交之2條邊之方向表示為x方向及y方向。 FIG. 5 shows the test substrate 9a on which the test pattern 93 is drawn by the exposure device 3. view. Actually, the test pattern 93 on the test substrate 9a can be visually recognized as a resist pattern by performing development processing. Here, the position, shape, and size of each of the pattern elements of the test pattern 93 of FIG. 5 are set to exactly match the pattern indicated by the design data for the test pattern (however, the correction by the data correction unit 21 is not performed). That is, the test pattern 93 of FIG. 5 is also the pattern itself represented by the design data for the test pattern. The test substrate 9a of Fig. 5 has a rectangular shape. In Fig. 5, the directions along the two sides orthogonal to each other of the test substrate 9a are shown as the x direction and the y direction.

測試圖案93包含複數個特性獲取用圖案95。於圖5中，利用矩形表示特性獲取用圖案95。複數個特性獲取用圖案95之各者係經過顯影、蝕刻、抗蝕劑剝離等處理而最終成為用以測定蝕刻特性之測定圖案之預定描繪圖案。於圖5之例中，複數個特性獲取用圖案95係於x方向及y方向以固定之間距排列。若將配置各特性獲取用圖案95之位置(例如該圖案之中央)P稱為「對象位置」，則於測試基板9a上設定有複數個對象位置P。測試基板9a上之對象位置P之個數例如為4個以上，較佳為9個以上。各特性獲取用圖案95包含複數個圖形要素。於圖5中表示特性獲取用圖案95之矩形係包含該複數個圖形要素全體之大致最小之矩形。 The test pattern 93 includes a plurality of patterns 95 for property acquisition. In FIG. 5, the characteristic acquisition pattern 95 is indicated by a rectangle. Each of the plurality of characteristic acquisition patterns 95 is subjected to processing such as development, etching, and resist stripping to finally form a predetermined drawing pattern for measuring a measurement pattern of etching characteristics. In the example of FIG. 5, a plurality of characteristic acquisition patterns 95 are arranged at a fixed interval in the x direction and the y direction. When the position (for example, the center of the pattern) P in which the characteristic acquisition pattern 95 is placed is referred to as "target position", a plurality of object positions P are set on the test substrate 9a. The number of the object positions P on the test substrate 9a is, for example, four or more, and preferably nine or more. Each of the characteristic acquisition patterns 95 includes a plurality of graphic elements. The rectangle in which the characteristic acquisition pattern 95 is shown in FIG. 5 includes a substantially smallest rectangle of the entire plurality of graphic elements.

圖6係將特性獲取用圖案95之一部分放大而表示之圖。於圖6所示之例中，特性獲取用圖案95包含複數個第1圖形要素群951。各第1圖形要素群951包含相互平行地大致沿y方向延伸之2條大致直線狀之第1圖形要素952。各第1圖形要素群951中之2條第1圖形要素952間之間隙寬度G(即2條第1圖形要素952之與長度方向垂直之x方向上之間隙之寬度)，與其他第1圖形要素群951中之2條第1圖形要素952間之間隙寬度G不同。 Fig. 6 is a view showing a part of the characteristic acquisition pattern 95 in an enlarged manner. In the example shown in FIG. 6, the characteristic acquisition pattern 95 includes a plurality of first graphic element groups 951. Each of the first pattern element groups 951 includes two first linear element elements 952 extending substantially in the y direction in parallel with each other. The gap width G between the two first pattern elements 952 in each of the first pattern element groups 951 (that is, the width of the gap in the x direction perpendicular to the longitudinal direction of the two first pattern elements 952), and other first patterns The gap width G between the two first graphic elements 952 in the element group 951 is different.

藉由對測試基板9a之顯影處理，而於測試基板9a上形成有表示測試圖案93之抗蝕劑圖案。繼而，對測試基板9a以該抗蝕劑圖案作為掩 模而實施蝕刻，進而實施抗蝕劑剝離等處理，由此於測試基板9a之主面上形成有表示複數個特性獲取用圖案95之複數個測定圖案。 A resist pattern indicating the test pattern 93 is formed on the test substrate 9a by the development processing of the test substrate 9a. Then, the test substrate 9a is masked by the resist pattern. Etching is performed by a mold, and a process such as resist peeling is performed, whereby a plurality of measurement patterns indicating a plurality of characteristic acquisition patterns 95 are formed on the main surface of the test substrate 9a.

圖7係將與特性獲取用圖案95對應之測定圖案96之一部分放大而表示之圖。測定圖案96包含分別表示複數個第1圖形要素群951之複數個第2圖形要素群953。於圖7中，將1個第2圖形要素群953放大而表示。各第2圖形要素群953包含與2條第1圖形要素952對應之大致直線狀之2條第2圖形要素954。第2圖形要素954係利用抗蝕劑圖案中之第1圖形要素952之部位並藉由蝕刻而形成。於圖7中，利用二點鏈線一併表示第1圖形要素952之輪廓線。 FIG. 7 is an enlarged view showing a part of the measurement pattern 96 corresponding to the characteristic acquisition pattern 95. The measurement pattern 96 includes a plurality of second graphic element groups 953 each representing a plurality of first graphic element groups 951. In FIG. 7, one second graphic element group 953 is enlarged and shown. Each of the second graphic element groups 953 includes two second graphic elements 954 that are substantially linear in shape corresponding to the two first graphic elements 952. The second pattern element 954 is formed by etching using a portion of the first pattern element 952 in the resist pattern. In FIG. 7, the outline of the first graphic element 952 is collectively indicated by a two-dot chain line.

此處，將形成各第2圖形要素群953中之2條第2圖形要素954間之間隙之各第2圖形要素954之邊(輪廓線之部位)、與對應於該邊之第1圖形要素952之邊之間之距離(與形成該間隙之輪廓線之部位垂直之方向之距離)稱為蝕刻量Et。蝕刻量Et表示該2條第2圖形要素954間之間隙中之第2圖形要素954之邊相對於各第1圖形要素952之邊之移動量(輪廓線之單側之變細量)。蝕刻量Et係相依於與該2條第2圖形要素954對應之2條第1圖形要素952間之間隙寬度G而變化。間隙寬度G與蝕刻量Et之關係係藉由如下方法獲取：拍攝測試基板9a而獲取測定圖案96之圖像，並比較該圖像與特性獲取用圖案95之設計資料。 Here, the side (the portion of the outline) of each of the second pattern elements 954 in the gap between the two second pattern elements 954 in each of the second pattern element groups 953 and the first pattern element corresponding to the side are formed. The distance between the sides of 952 (the distance from the direction perpendicular to the portion where the outline of the gap is formed) is referred to as the etching amount Et. The etching amount Et indicates the amount of movement of the side of the second pattern element 954 in the gap between the two second pattern elements 954 with respect to the side of each of the first pattern elements 952 (the amount of variation of one side of the contour line). The etching amount Et changes depending on the gap width G between the two first pattern elements 952 corresponding to the two second pattern elements 954. The relationship between the gap width G and the etching amount Et is obtained by taking the test substrate 9a and acquiring an image of the measurement pattern 96, and comparing the design information of the image and the characteristic acquisition pattern 95.

圖8係表示蝕刻曲線之圖，該蝕刻曲線表示間隙寬度G與蝕刻量Et之關係。於圖8中，將2條蝕刻曲線標註符號E1、E2而表示。於蝕刻曲線中，隨著間隙寬度G變小，蝕刻量Et亦逐漸變小。於間隙寬度G為某種程度大之範圍內，蝕刻量Et與間隙寬度G大致成正比例，但當間隙寬度G變小時，相對於間隙寬度G之減小而蝕刻量Et急遽地減小。換句話說，當間隙寬度G變小時，蝕刻曲線之斜率變大。 Fig. 8 is a view showing an etching curve showing the relationship between the gap width G and the etching amount Et. In Fig. 8, two etching curves are indicated by symbols E1 and E2. In the etching curve, as the gap width G becomes smaller, the etching amount Et also becomes smaller. In the range where the gap width G is somewhat large, the etching amount Et is substantially proportional to the gap width G. However, when the gap width G is small, the etching amount Et is drastically reduced with respect to the decrease in the gap width G. In other words, when the gap width G becomes small, the slope of the etching curve becomes large.

於複數個特性獲取用圖案95中，由於測試基板9a上之位置(即對象位置P)不同，因此如圖8之2條蝕刻曲線E1、E2般，存在蝕刻曲線之 形狀互不相同之情形。於本處理例中，自複數個特性獲取用圖案95分別獲取多條蝕刻曲線。換句話說，針對複數個對象位置P而獲取多條蝕刻曲線。此外，於圖8中，利用黑色或白色之四角點表示各第1圖形要素群951之間隙寬度G上之蝕刻量Et。於複數個特性獲取用圖案95中，測定蝕刻量Et之間隙寬度G之大小或個數亦可不同。 In the plurality of characteristic acquisition patterns 95, since the position on the test substrate 9a (ie, the object position P) is different, as shown in the etching curve E1 and E2 of FIG. Shapes are different from each other. In the present processing example, a plurality of etching curves are acquired from the plurality of characteristic acquisition patterns 95, respectively. In other words, a plurality of etching curves are acquired for a plurality of object positions P. Further, in FIG. 8, the etching amount Et on the gap width G of each of the first pattern element groups 951 is indicated by the four corners of black or white. In the plurality of characteristic acquisition patterns 95, the magnitude or the number of the gap widths G of the measured etching amount Et may be different.

特性獲取用圖案95亦可包含除矩形以外之各種形狀之圖形要素及各種組合之圖形要素群。例如，亦可使特性獲取用圖案95包含直徑不同之複數個圓形圖形要素，並獲取表示圓形圖形要素之直徑與蝕刻量之關係之蝕刻曲線。對於此種蝕刻曲線之種類，亦可獲取與複數個對象位置P分別對應之複數條蝕刻曲線。於以下之說明中，將相對於測試基板9a及基板9上之各位置之1條或複數條蝕刻曲線統稱為「蝕刻特性」，並將與對象位置P對應之蝕刻特性稱為「對象蝕刻特性」。蝕刻特性代表性地表示於設計資料所表示之圖案中相互鄰接之圖形要素間之間隙(設計間隙)之寬度、與藉由蝕刻而形成之圖案中之該圖形要素間之間隙(實際間隙)之寬度之關係。 The feature acquisition pattern 95 may also include graphic elements of various shapes other than a rectangle and a group of graphic elements of various combinations. For example, the characteristic acquisition pattern 95 may include a plurality of circular pattern elements having different diameters, and acquire an etching curve indicating the relationship between the diameter of the circular pattern element and the etching amount. For the type of the etching curve, a plurality of etching curves corresponding to the plurality of object positions P may be obtained. In the following description, one or a plurality of etching curves at respective positions on the test substrate 9a and the substrate 9 are collectively referred to as "etching characteristics", and an etching characteristic corresponding to the object position P is referred to as "object etching characteristics". "." The etching characteristic is representatively represented by the width of the gap (design gap) between the pattern elements adjacent to each other in the pattern indicated by the design data, and the gap (actual gap) between the pattern elements in the pattern formed by etching. The relationship between widths.

於描繪裝置1中，將相對於各對象位置P之1條或複數條蝕刻曲線記憶於上述蝕刻特性記憶部212。即，將相對於複數個對象位置P之複數個對象蝕刻特性記憶於蝕刻特性記憶部212，為下述之處理做準備(步驟S11)。此外，複數個對象蝕刻特性可於除描繪裝置1以外之裝置獲取，亦可於描繪裝置1獲取。於在描繪裝置1獲取對象蝕刻特性之情形時，於描繪裝置1設置獲取測定圖案96(參照圖7)之圖像之攝像部、及基於測定圖案96之圖像及特性獲取用圖案95(參照圖6)之設計資料而求出各對象位置之對象蝕刻特性之蝕刻特性運算部(於第2實施形態之檢查裝置1a中相同)。 In the drawing device 1, one or a plurality of etching curves with respect to each of the target positions P are stored in the etching characteristic storage unit 212. In other words, a plurality of object etching characteristics with respect to the plurality of object positions P are memorized in the etching characteristic storage unit 212, and are prepared for the following processing (step S11). Further, a plurality of object etching characteristics may be acquired by a device other than the drawing device 1 or may be acquired by the drawing device 1. When the drawing device 1 acquires the target etching characteristic, the drawing device 1 is provided with an imaging unit that acquires an image of the measurement pattern 96 (see FIG. 7), and an image based on the measurement pattern 96 and the characteristic acquisition pattern 95 (see In the design data of FIG. 6), the etching characteristic calculation unit for the target etching characteristics of each target position is obtained (the same applies to the inspection apparatus 1a of the second embodiment).

於特性群組獲取部213之群組特性獲取部214中，決定特性群組之個數(以下稱為「設定群組數量」)(步驟S12)。此處，特性群組係僅 包含與相互類似之對象蝕刻特性對應之對象位置P之集合。設定群組數量係例如基於操作者經由輸入部(鍵盤206a及滑鼠206b等)之輸入而決定。設定群組數量亦可預先決定。 The group characteristic acquisition unit 214 of the characteristic group acquisition unit 213 determines the number of characteristic groups (hereinafter referred to as "set group number") (step S12). Here, the feature group is only A set of object positions P corresponding to object etching characteristics similar to each other. The number of set groups is determined based on, for example, an operator input via an input unit (keyboard 206a, mouse 206b, etc.). The number of groups can also be determined in advance.

繼而，隨機地特定出設定群組數量之量之對象位置P，並分別分配至設定群組數量之特性群組。將被分配至各特性群組之對象位置P之對象蝕刻特性作為與該特性群組建立關聯之蝕刻特性(以下稱為「群組蝕刻特性」)來處理(步驟S13)。於群組化處理部215中，求出表示各對象位置P之對象蝕刻特性與各特性群組之群組蝕刻特性之類似度之值(此處，兩者之類似度越高則值越大，以下稱為「類似度評估值」)。 Then, the object positions P of the set number of groups are randomly specified, and are respectively assigned to the characteristic groups of the set group number. The target etching characteristic of the target position P assigned to each characteristic group is processed as an etching characteristic (hereinafter referred to as "group etching characteristic") associated with the characteristic group (step S13). The grouping processing unit 215 obtains a value indicating the similarity between the target etching characteristics of the respective target positions P and the group etching characteristics of the respective characteristic groups (here, the higher the similarity between the two, the larger the value , hereinafter referred to as "similarity evaluation value").

例如，於某對象位置P之對象蝕刻特性之蝕刻曲線、及某特性群組之群組蝕刻特性之蝕刻曲線為圖8中之蝕刻曲線E1、E2之情形時，於預先規定之複數個間隙寬度之各者，求出2條蝕刻曲線E1、E2之蝕刻量Et之差(絕對值)d。繼而，求出複數個間隙寬度中之該差d之和作為該2條蝕刻曲線E1、E2之間之距離。於對象蝕刻特性只包含一種蝕刻曲線之情形時，該距離成為上述類似度評估值。於對象蝕刻特性包含複數種蝕刻曲線之情形時，複數種蝕刻曲線之該距離之和成為上述類似度評估值。 For example, when the etching curve of the etching characteristic of the object at a certain object position P and the etching curve of the group etching characteristic of a certain characteristic group are the etching curves E1 and E2 in FIG. 8, the predetermined plurality of gap widths are specified. Each of them obtains a difference (absolute value) d between the etching amounts Et of the two etching curves E1 and E2. Then, the sum of the differences d among the plurality of gap widths is obtained as the distance between the two etching curves E1 and E2. When the object etching characteristic includes only one etching curve, the distance becomes the above similarity evaluation value. In the case where the object etching characteristic includes a plurality of etching curves, the sum of the distances of the plurality of etching curves becomes the above-described similarity evaluation value.

若針對各對象位置P，求出與設定群組數量之特性群組之各者之類似度評估值，則將該對象位置P分配至類似度評估值成為最小之特性群組。如此，於群組化處理部215中，基於各對象蝕刻特性與各特性群組之群組蝕刻特性之類似度評估值，而進行將與該對象蝕刻特性對應之對象位置P包含於設定群組數量之特性群組中之任一者之群組化處理(步驟S14)。藉由群組化處理，於各特性群組中包含至少1個對象位置P。此外，於類似度評估值之運算中，求出差d之複數個間隙寬度之個數(樣品數量)及值可任意地決定，不一定必須與測試圖案93之 第1圖形要素952間之間隙寬度G一致。與第1圖形要素952間之間隙寬度G不同之間隙寬度之蝕刻量係藉由各種插值運算而求出。 When the similarity evaluation value of each of the characteristic groups of the set group number is obtained for each target position P, the target position P is assigned to the characteristic group in which the similarity evaluation value becomes the smallest. In this manner, the grouping processing unit 215 performs the similarity evaluation value of each of the target etching characteristics and the group etching characteristics of the respective characteristic groups, and includes the target position P corresponding to the target etching characteristic in the setting group. Grouping processing of any of the number of characteristic groups (step S14). At least one object position P is included in each feature group by grouping processing. Further, in the calculation of the similarity evaluation value, the number of the plurality of gap widths (the number of samples) and the value of the difference d can be determined arbitrarily, and it is not necessarily necessary to match the test pattern 93. The gap width G between the first graphic elements 952 is the same. The etching amount of the gap width different from the gap width G between the first pattern elements 952 is obtained by various interpolation calculations.

重複控制部216當確認到未滿足下述之結束條件時(步驟S15)，使群組特性獲取部214再次獲取各特性群組之群組蝕刻特性(步驟S13)。此時，自藉由前一群組化處理而包含於各特性群組中之對象位置之對象蝕刻特性求出該特性群組之群組蝕刻特性。具體而言，關於蝕刻曲線之各種類，於各特性群組中所包含之對象位置之蝕刻曲線中，獲取表示各間隙寬度中之蝕刻量之平均值或中央值等代表值之蝕刻曲線作為群組蝕刻特性之蝕刻曲線。此外，各間隙寬度中之蝕刻量之代表值只要為表示蝕刻量之分佈之中央附近之值即可。 When it is confirmed that the following termination condition is not satisfied (step S15), the grouping control unit 214 acquires the group etching characteristic of each characteristic group again (step S13). At this time, the group etching characteristics of the characteristic group are obtained from the object etching characteristics of the target positions included in the respective characteristic groups by the previous grouping processing. Specifically, regarding various types of etching curves, in an etching curve of a target position included in each characteristic group, an etching curve indicating a representative value such as an average value or a central value of an etching amount in each gap width is acquired as a group The etching curve of the set of etching characteristics. Further, the representative value of the etching amount in each gap width may be a value indicating the vicinity of the center of the distribution of the etching amount.

群組蝕刻特性亦可藉由其他方法而求出。例如，亦可求出各特性群組中所包含之各對象位置之蝕刻曲線、與該特性群組中所包含之其他對象位置之蝕刻曲線之上述距離之和，並獲取該和成為最小之蝕刻曲線作為群組蝕刻特性之蝕刻曲線。如此，各特性群組之群組蝕刻特性之蝕刻曲線亦可為一個對象位置P之蝕刻曲線本身，該一個對象位置P之蝕刻曲線表示該特性群組中所包含之複數個對象位置P之蝕刻曲線之分佈之中央附近。實際上，由於各對象位置P之蝕刻曲線包含干擾(錯誤值)，所以就使群組蝕刻特性之蝕刻曲線平滑化之觀點來說，較佳為如上述般獲取表示代表值之蝕刻曲線(於下述之代表蝕刻特性之蝕刻曲線中同樣)。 The group etching characteristics can also be obtained by other methods. For example, the sum of the etching curves of the respective object positions included in each characteristic group and the etching curves of the other object positions included in the characteristic group may be obtained, and the etching may be minimized. The curve serves as an etch curve for the group etch characteristics. Thus, the etching curve of the group etching characteristics of each characteristic group may also be an etching curve of the object position P. The etching curve of the one object position P indicates the etching of the plurality of object positions P included in the characteristic group. Near the center of the distribution of the curve. In fact, since the etching curve of each object position P contains interference (error value), it is preferable to obtain an etching curve indicating a representative value as described above from the viewpoint of smoothing the etching curve of the group etching characteristics. The same is true for the etching curve representing the etching characteristics described below.

於群組化處理部215中，與上述同樣地，求出各對象蝕刻特性與各特性群組之群組蝕刻特性之類似度評估值，並基於類似度評估值而進行將各對象位置P包含於任一特性群組中之新之群組化處理(對象位置P之重新分配)(步驟S14)。換句話說，對各特性群組中所包含之對象位置P進行更新。 In the grouping processing unit 215, the similarity evaluation values of the respective object etching characteristics and the group etching characteristics of the respective characteristic groups are obtained in the same manner as described above, and the respective object positions P are included based on the similarity evaluation values. The new grouping process (redistribution of the object position P) in any of the feature groups (step S14). In other words, the object position P included in each feature group is updated.

於重複控制部216中，確認更新後之各特性群組中所包含之對象 位置P係否與更新前之該特性群組中所包含之對象位置P一致。此處，更新後之特性群組中所包含之對象位置P與更新前之特性群組中所包含之對象位置P不同，確認出未滿足結束條件(步驟S15)而重複上述步驟S13、S14。若步驟S14之更新後之各特性群組中所包含之對象位置P與即將更新之前之該特性群組中所包含之對象位置P一致，即，對象位置P未於特性群組間移動，則確認出滿足結束條件(步驟S15)而結束上述步驟S13、S14之重複。於以下之說明中，將滿足結束條件時之特性群組稱為「決定特性群組」。 In the repetition control unit 216, the objects included in each of the updated characteristic groups are confirmed. Whether the position P is consistent with the object position P included in the feature group before the update. Here, the target position P included in the updated feature group is different from the target position P included in the feature group before the update, and it is confirmed that the end condition is not satisfied (step S15), and the above steps S13 and S14 are repeated. If the object position P included in each of the feature groups after the update in step S14 coincides with the object position P included in the feature group immediately before the update, that is, the object position P does not move between the feature groups, then It is confirmed that the end condition is satisfied (step S15), and the repetition of the above steps S13 and S14 is ended. In the following description, the characteristic group when the end condition is satisfied is referred to as "determination characteristic group".

如此，於特性群組獲取部213中，重複進行步驟S13之群組蝕刻特性之獲取、及步驟S14之群組化處理直至滿足特定之結束條件為止。由此，與相互類似之對象蝕刻特性對應之對象位置包含於1個決定特性群組，複數個對象位置被分成較該複數個對象位置少之設定群組數量之決定特性群組。於圖9中，藉由按3種情形來變更標註於表示特性獲取用圖案95之矩形之平行斜線之寬度，而表示3個決定特性群組中所包含之對象位置P。此外，結束條件亦可為上述步驟S13、S14之重複次數達到預先規定之次數之情形等。另外，特性群組獲取部213中之對象位置P之分組可利用除上述方法(k平均法)以外之方法進行。 In this way, in the characteristic group acquisition unit 213, the acquisition of the group etching characteristics in step S13 and the grouping processing in step S14 are repeated until the specific end condition is satisfied. Thereby, the object position corresponding to the object etching characteristics similar to each other is included in one determination characteristic group, and the plurality of object positions are divided into the determination characteristic groups having a smaller number of setting groups than the plurality of object positions. In FIG. 9, the object position P included in the three determination characteristic groups is indicated by changing the width of the parallel oblique line of the rectangle indicating the characteristic acquisition pattern 95 in three cases. Further, the termination condition may be a case where the number of repetitions of the above-described steps S13 and S14 reaches a predetermined number of times. Further, the grouping of the target positions P in the characteristic group acquiring unit 213 can be performed by a method other than the above method (k-averaging method).

將於前一步驟S13所獲取之複數個特性群組之群組蝕刻特性分別決定為複數個決定特性群組之代表蝕刻特性(步驟S16)。於下述之處理中，將各決定特性群組之代表蝕刻特性作為該決定特性群組中所包含之對象位置P之蝕刻特性來處理。於步驟S16中，只要各決定特性群組之代表蝕刻特性實質上代表該決定特性群組中所包含之複數個對象位置P之對象蝕刻特性(表示複數個蝕刻特性之特徵)，則亦可利用與步驟S13不同之方法獲取。 The group etching characteristics of the plurality of characteristic groups acquired in the previous step S13 are respectively determined as representative etching characteristics of the plurality of determining characteristic groups (step S16). In the following processing, the representative etching characteristics of each of the determined characteristic groups are treated as the etching characteristics of the target position P included in the determined characteristic group. In step S16, if the representative etch characteristics of each of the determined characteristic groups substantially represent the target etch characteristics (characteristics of the plurality of etch characteristics) of the plurality of object positions P included in the determined characteristic group, the etch characteristics may be utilized. Obtained in a different manner from step S13.

繼而，於描繪裝置1中，將藉由蝕刻而形成於基板9上之預定圖 案之設計資料輸入至資料修正部21，並記憶於設計資料記憶部211，由此以做準備(步驟S17)。 Then, in the drawing device 1, a predetermined pattern formed on the substrate 9 by etching is performed. The design data of the case is input to the material correction unit 21, and is stored in the design data storage unit 211, thereby preparing (step S17).

圖10係表示設計資料所表示之設計圖案83之圖。於圖10中，將供描繪設計圖案83之預定之大致矩形之基板9之外形以粗二點鏈線表示。設計圖案83包括呈矩陣狀配置(即複接)之複數個部分圖案84。複數個部分圖案84分別為構成設計圖案83之圖案要素，設計圖案83係複數個圖案要素之集合即圖案要素群。於圖10中，將部分圖案84以矩形表示。 Fig. 10 is a view showing a design pattern 83 indicated by design data. In Fig. 10, the outer shape of the predetermined substantially rectangular substrate 9 for depicting the design pattern 83 is indicated by a thick two-dot chain line. The design pattern 83 includes a plurality of partial patterns 84 arranged in a matrix (ie, multiplexed). Each of the plurality of partial patterns 84 is a pattern element constituting the design pattern 83, and the design pattern 83 is a set of a plurality of pattern elements, that is, a pattern element group. In Fig. 10, a partial pattern 84 is indicated by a rectangle.

於圖10中表示各部分圖案84之矩形係包圍該部分圖案84中所包含之複數個圖形要素全體之大致最小之矩形。於圖10之例中，沿與利用二點鏈線表示之基板9之正交之2條邊對應之2個方向(於圖10中，與圖5等同樣地表示為x方向及y方向)，二維地排列複數個部分圖案84。這些部分圖案84係互為相同之圖案。 The rectangle of each partial pattern 84 is shown in FIG. 10 to surround the substantially smallest rectangle of the entirety of the plurality of graphic elements included in the partial pattern 84. In the example of FIG. 10, the two directions corresponding to the two sides orthogonal to the substrate 9 indicated by the two-dot chain line (in FIG. 10, the x direction and the y direction are shown in the same manner as in FIG. 5 and the like). A plurality of partial patterns 84 are arranged two-dimensionally. These partial patterns 84 are the same pattern with each other.

由於設計圖案83係描繪於基板9上之預定之圖案，所以能夠理解為於設計圖案83中亦設定有複數個對象位置P。同樣地，能夠理解為於基板9上設定有供描繪各部分圖案84之預定位置(以下簡稱為「部分圖案84之位置」)。 Since the design pattern 83 is a predetermined pattern drawn on the substrate 9, it can be understood that a plurality of object positions P are also set in the design pattern 83. Similarly, it can be understood that a predetermined position (hereinafter simply referred to as "position of the partial pattern 84") for drawing each partial pattern 84 is set on the substrate 9.

於分割資料修正部217中，自設計圖案83之設計資料提取分別表示複數個部分圖案84之複數個分割資料(資料塊)。換句話說，設計圖案83之設計資料被分割成分別表示複數個部分圖案84之複數個分割資料。另外，特定出相對於各分割資料所表示之部分圖案84之位置(例如部分圖案84之中央)而最接近之對象位置P。然後，基於該對象位置P之蝕刻特性、即該對象位置P所屬之決定特性群組之代表蝕刻特性而修正該分割資料，由此求出表示各部分圖案84之已修正完畢分割資料(步驟S18)。此外，於圖9中，將以各對象位置P作為最接近之對象位置之區域利用以該對象位置P為中心之二點鏈線之矩形A1表示，於圖 10中亦同樣。 The segmentation data correction unit 217 extracts a plurality of pieces of divided data (data blocks) representing the plurality of partial patterns 84 from the design data of the design pattern 83. In other words, the design material of the design pattern 83 is divided into a plurality of pieces of divided data respectively representing a plurality of partial patterns 84. Further, the object position P closest to the position of the partial pattern 84 indicated by each divided material (for example, the center of the partial pattern 84) is specified. Then, the divided data is corrected based on the etching characteristic of the target position P, that is, the representative etching characteristic of the determined characteristic group to which the target position P belongs, thereby obtaining the corrected divided data indicating each partial pattern 84 (step S18). ). Further, in FIG. 9, the region in which each object position P is the closest target position is represented by a rectangle A1 of a two-dot chain line centering on the object position P, as shown in FIG. The same is true in 10th.

於分割資料之修正中，考慮於基板9上之各部分圖案84之位置，進行按照蝕刻特性所表示之蝕刻量之過度(即超過所需量)之蝕刻。即，參照與各部分圖案84之位置之蝕刻特性大致等效之決定特性群組之代表蝕刻特性，以使蝕刻後之基板9上之圖案之各圖形要素形成為所需之線寬或大小之方式，進行使各分割資料之圖形要素之線寬變粗、或使圖形要素變大之修正。 In the correction of the divided data, etching of the excessive amount of etching (that is, exceeding the required amount) in accordance with the etching characteristics is performed in consideration of the position of each partial pattern 84 on the substrate 9. That is, the representative etching characteristics of the characteristic group are determined with reference to the etching characteristics of the positions of the partial patterns 84, so that the respective pattern elements of the pattern on the substrate 9 after etching are formed into a desired line width or size. In the manner, correction is made to make the line width of the graphic elements of each divided material thicker or to increase the graphic elements.

此處，若將供描繪各部分圖案84之基板9上之區域(部分)稱為分割區域，則於步驟S18中，藉由分割資料修正部217，首先將設計圖案83之設計資料分割成與設定於基板9上之複數個分割區域分別對應之複數個分割資料。而且，對各分割資料基於代表與該分割資料對應之分割區域之最接近之對象位置P所屬之一個決定特性群組之蝕刻特性(代表蝕刻特性)而進行修正。如此，藉由進行對各分割資料之蝕刻修正而獲取已修正完畢分割資料。 Here, when the region (portion) on the substrate 9 on which the partial patterns 84 are to be drawn is referred to as a divided region, in step S18, the design data of the design pattern 83 is first divided into and The plurality of divided regions set on the substrate 9 respectively correspond to a plurality of divided data. Further, each of the divided data is corrected based on the etching characteristic (representative etching characteristic) of one of the determined characteristic groups to which the closest target position P corresponding to the divided region corresponding to the divided data belongs. In this way, the corrected divided data is obtained by performing etching correction on each divided data.

如上所述，於圖10所示之例中，設計資料之複數個分割資料分別表示之分割圖案、即部分圖案84相同。因此，能夠直接利用使用各決定特性群組之代表蝕刻特性而獲取之已修正完畢分割資料來作為以該決定特性群組中所包含之對象位置P為最接近之對象位置之其他分割區域之分割資料。由此，對分割資料之蝕刻修正之執行次數變少，而於短時間完成與複數個分割區域分別對應之複數個已修正完畢分割資料之獲取(蝕刻修正)。於圖10中，藉由使標註於表示部分圖案84之矩形之平行斜線之寬度一致，而表現利用相同之已修正完畢分割資料之部分圖案84。 As described above, in the example shown in FIG. 10, the plurality of divided data of the design data respectively indicate that the division pattern, that is, the partial pattern 84 is the same. Therefore, it is possible to directly use the corrected divided data obtained by using the representative etching characteristics of each of the determined characteristic groups as the segmentation of the other divided regions in which the target position P included in the determined characteristic group is the closest target position. data. Thereby, the number of executions of the etching correction of the divided data is reduced, and the acquisition (etching correction) of the plurality of corrected divided data corresponding to the plurality of divided regions is completed in a short time. In Fig. 10, the partial pattern 84 using the same corrected divided data is represented by matching the widths of the parallel oblique lines of the rectangles indicating the partial patterns 84.

於分割資料修正部217中，藉由彙總上述複數個已修正完畢分割資料而產生上述已修正完畢資料。該已修正完畢資料自資料修正部21發送至資料轉換部22。於資料轉換部22中，將作為矢量資料之已修正 完畢資料轉換成名冊資料即描繪資料(步驟S19)。 The segmentation data correction unit 217 generates the corrected data by aggregating the plurality of corrected segmentation data. The corrected data is sent from the data correction unit 21 to the data conversion unit 22. In the data conversion unit 22, it will be corrected as vector data. The completed data is converted into the roster data, that is, the drawing data (step S19).

該描繪資料自資料轉換部22發送至曝光裝置3之描繪控制器31。於曝光裝置3中，藉由基於來自資料處理裝置2之描繪資料並利用描繪控制器31控制光出射部33之光調變部332及掃描機構35而進行對基板9之描繪(步驟S20)。藉由對已被進行描繪之基板9進行顯影、蝕刻等各種處理，而於基板9上形成有分別表示部分圖案84之複數個獨立之配線圖案。 This drawing data is sent from the material conversion unit 22 to the drawing controller 31 of the exposure device 3. The exposure device 3 performs the drawing of the substrate 9 by controlling the light modulation unit 332 and the scanning mechanism 35 of the light emitting unit 33 by the drawing controller 31 based on the drawing data from the material processing device 2 (step S20). A plurality of independent wiring patterns respectively indicating the partial patterns 84 are formed on the substrate 9 by performing various processes such as development and etching on the substrate 9 to be drawn.

實際上，對以相同之設計圖案83作為描繪對象之複數個基板9，利用相同之已修正完畢資料依序進行描繪。另外，當變更設計圖案、即以新之設計圖案作為描繪對象時，一面直接利用複數個決定特性群組之代表蝕刻特性，一面使用該新之設計圖案進行步驟S17、S18，而產生已修正完畢資料。然後，基於該已修正完畢資料進行對基板9之描繪。 Actually, a plurality of substrates 9 having the same design pattern 83 as a drawing target are sequentially drawn using the same corrected data. Further, when the design pattern is changed, that is, when the new design pattern is used as the drawing target, the representative etching characteristics of the plurality of determining characteristic groups are directly used, and the new design pattern is used to perform steps S17 and S18, and the correction is completed. data. Then, the drawing of the substrate 9 is performed based on the corrected data.

此處，假定如下之比較例之處理：對與以各對象位置P作為最接近之對象位置之分割區域(部分)對應之分割資料基於該對象位置P之對象蝕刻特性進行修正。由於複數個對象位置P之複數個對象蝕刻特性通常互不相同，所以於比較例之處理中，必須獲取所有對象位置P之個數之量之已修正完畢分割資料。由於1個已修正完畢分割資料之獲取需要一定程度之時間，所以若獲取所有對象位置P之個數之量之已修正完畢分割資料，則難以效率佳地實施利用描繪裝置1之描繪。另外，雖然亦考慮將測試基板9a上之對象位置P之個數預先限定為數個(減少測定點數)，但於該情形時，以各對象位置P作為最接近之對象位置之範圍變廣，而無法進行高精度之蝕刻修正。 Here, a process of a comparative example in which the segmentation data corresponding to the segmentation region (portion) which is the closest target position with each object position P is corrected based on the object etching characteristic of the object position P is assumed. Since the plurality of object etching characteristics of the plurality of object positions P are usually different from each other, in the processing of the comparative example, it is necessary to acquire the corrected divided data of the number of all the object positions P. Since it takes a certain amount of time to acquire the corrected divided data, it is difficult to efficiently perform the drawing by the drawing device 1 by acquiring the corrected divided data of the number of all the target positions P. In addition, it is considered that the number of the target positions P on the test substrate 9a is limited to a plurality of times (the number of measurement points is reduced). However, in this case, the range of the target position P as the closest target position is widened. It is impossible to perform high-precision etching correction.

相對於此，於資料修正部21之特性群組獲取部213中，藉由將與相互類似之對象蝕刻特性對應之對象位置P包含於1個特性群組，而將複數個對象位置P分成特定數量之決定特性群組。即，對複數個對象 位置P基於對象蝕刻特性(基於蝕刻曲線之形狀)而進行分組。然後，藉由分割資料修正部217，對設計資料之各分割資料基於代表與該分割資料對應之分割區域之最接近之對象位置P所屬之一個決定特性群組之蝕刻特性而進行修正。由此，能夠實現效率佳地進行高精度之蝕刻修正。另外，於設置該資料修正部21之描繪裝置1中，能夠將複數個部分圖案84高精度地且(藉由蝕刻修正之效率化)而於短時間描繪於基板9上。 On the other hand, in the characteristic group acquisition unit 213 of the data correction unit 21, the plurality of object positions P are divided into specific ones by including the target position P corresponding to the object etching characteristics similar to each other in one characteristic group. The number determines the characteristic group. That is, for a plurality of objects The position P is grouped based on the object etching characteristics (based on the shape of the etching curve). Then, the segmentation data correcting unit 217 corrects the segmentation data of the design data based on the etching characteristic of the one of the determined feature groups to which the closest target position P corresponding to the segmentation region corresponding to the segmentation data belongs. Thereby, it is possible to achieve high-accuracy etching correction with high efficiency. Further, in the drawing device 1 in which the data correcting unit 21 is provided, the plurality of partial patterns 84 can be drawn on the substrate 9 in a short time with high precision (efficiency by etching correction).

另外，特性群組獲取部213包括：群組特性獲取部214，獲取各特性群組之群組蝕刻特性；及群組化處理部215，基於各對象蝕刻特性與各特性群組之群組蝕刻特性之類似度評估值而進行群組化處理。而且，重複進行利用群組特性獲取部214之群組蝕刻特性之獲取、及利用群組化處理部215之群組化處理直至滿足特定條件為止。另外，於重複這些處理中，自藉由前一群組化處理而包含於各特性群組中之對象位置P之對象蝕刻特性求出該特性群組之群組蝕刻特性。由此，能夠對複數個對象位置P適當地進行分組。 Further, the characteristic group acquisition unit 213 includes a group characteristic acquisition unit 214 that acquires group etching characteristics of each characteristic group, and a grouping processing unit 215 that performs group etching based on each object etching characteristic and each characteristic group. The similarity evaluation values of the characteristics are grouped. Then, the acquisition of the group etching characteristics by the group characteristic acquiring unit 214 and the grouping processing by the grouping processing unit 215 are repeated until a specific condition is satisfied. Further, in repeating these processes, the group etching characteristics of the characteristic group are obtained from the target etching characteristics of the target position P included in each characteristic group by the previous grouping process. Thereby, a plurality of object positions P can be appropriately grouped.

接下來，對利用圖3之對象蝕刻特性獲取部218之處理進行說明。利用對象蝕刻特性獲取部218之處理係於圖4中之步驟S11中進行之處理。於本處理例之說明中，將圖5中之對象位置P稱為「基準位置」，將與對象位置P對應之對象蝕刻特性稱為「基準蝕刻特性」。 Next, the processing by the target etching characteristic acquisition unit 218 of FIG. 3 will be described. The processing by the object etching characteristic acquisition unit 218 is performed in step S11 in Fig. 4 . In the description of the present processing example, the target position P in FIG. 5 is referred to as "reference position", and the target etching characteristic corresponding to the target position P is referred to as "reference etching characteristic".

圖11係表示測試基板9a之俯視圖，對測試基板9a上之複數個特性獲取用圖案95之位置(基準位置)標註符號P0。另外，於圖11中，與複數個部分圖案84對應之區域亦利用二點鏈線之矩形表示。與複數個基準位置P0對應之複數個基準蝕刻特性係與上述處理(獲取對象蝕刻特性之處理)同樣地獲取。 11 is a plan view showing the test substrate 9a, and the position (reference position) of the plurality of characteristic acquisition patterns 95 on the test substrate 9a is denoted by a symbol P0. In addition, in FIG. 11, the area corresponding to the plurality of partial patterns 84 is also represented by a rectangle of two-dot chain lines. The plurality of reference etching characteristics corresponding to the plurality of reference positions P0 are acquired in the same manner as the above-described processing (processing of acquiring the target etching characteristics).

繼而，於對象蝕刻特性獲取部218中，將各部分圖案84之位置設為對象位置，並基於複數個基準位置P0之複數個基準蝕刻特性而求出 複數個對象位置之複數個對象蝕刻特性(步驟S11)。對象蝕刻特性係基於對象位置(各部分圖案84之位置)與複數個基準位置P0之各個位置關係，而對與複數個基準位置P0對應之複數個基準蝕刻特性進行加權，並且基於進行加權後之複數個基準蝕刻特性而求出。另外，對複數個基準蝕刻特性之加權例如係藉由使基於與各基準蝕刻特性對應之基準位置P0和對象位置之間之距離之加權因子與該基準蝕刻特性相乘而進行。 Then, in the target etching characteristic acquisition unit 218, the position of each partial pattern 84 is set as the target position, and is obtained based on a plurality of reference etching characteristics of the plurality of reference positions P0. A plurality of object etching characteristics of a plurality of object positions (step S11). The object etching characteristic is based on the positional relationship between the object position (the position of each partial pattern 84) and the plurality of reference positions P0, and weights a plurality of reference etching characteristics corresponding to the plurality of reference positions P0, and based on the weighting It is obtained by a plurality of reference etching characteristics. Further, the weighting of the plurality of reference etching characteristics is performed, for example, by multiplying a weighting factor based on the distance between the reference position P0 corresponding to each of the reference etching characteristics and the target position by the reference etching characteristic.

詳細來說，藉由使用對象位置及複數個基準位置P0之雙線性插值(bilinear interpolation)，一面進行對上述複數個基準蝕刻特性之蝕刻曲線之加權，一面求出對象蝕刻特性之蝕刻曲線。例如，若關注於圖11中標註符號P1之對象位置，則藉由基於該對象位置P1、與包圍該對象位置P1之4個基準位置P0(形成最小之矩形之4個基準位置P0)中之(+y)側之2個基準位置P0之間之x方向之距離，對(+y)側之2個基準位置P0之蝕刻曲線進行線性插值，而求出第1插值蝕刻曲線。具體而言，若將上述2個基準位置P0中之一個基準位置P0與對象位置P1之間之x方向之距離設為d1，且將另一個基準位置P0與對象位置P1之間之x方向之距離設為d2，則將(d2/(d1+d2))設為加權因子來與該一個基準位置P0之蝕刻曲線(之蝕刻量)相乘。另外，將(d1/(d1+d2))設為加權因子來與該另一個基準位置P0之蝕刻曲線相乘。然後，藉由將對2條蝕刻曲線之乘法結果相加而求出第1插值蝕刻曲線。 Specifically, an etching curve of the target etching characteristic is obtained by weighting the etching curve of the plurality of reference etching characteristics by using bilinear interpolation of the target position and the plurality of reference positions P0. For example, if attention is paid to the object position of the symbol P1 in FIG. 11, it is based on the object position P1 and the four reference positions P0 (four reference positions P0 forming the smallest rectangle) surrounding the object position P1. The distance between the two reference positions P0 on the (+y) side in the x direction is linearly interpolated with the etching curve of the two reference positions P0 on the (+y) side, and the first interpolation etching curve is obtained. Specifically, the distance between the reference position P0 and the target position P1 in the x direction is set to d1, and the x direction between the other reference position P0 and the target position P1. When the distance is set to d2, (d2/(d1+d2)) is set as a weighting factor to be multiplied by the etching curve (the etching amount) of the one reference position P0. Further, (d1/(d1+d2)) is set as a weighting factor to be multiplied by the etching curve of the other reference position P0. Then, the first interpolation etching curve is obtained by adding the multiplication results of the two etching curves.

同樣地，藉由基於上述對象位置P1、與上述4個基準位置P0中之(-y)側之2個基準位置P0之間之x方向之距離，對(-y)側之2個基準位置P0之蝕刻曲線進行線性插值而求出第2插值蝕刻曲線。具體而言，若將上述2個基準位置P0中之一個基準位置P0與對象位置P1之間之x方向之距離設為d3，且將另一個基準位置P0與對象位置P1之間之x方向之距離設為d4，則將(d4/(d3+d4))設為加權因子來與該一個基準位置 P0之蝕刻曲線相乘。另外，將(d3/(d3+d4))設為加權因子來與該另一個基準位置P0之蝕刻曲線相乘。然後，藉由將對2條蝕刻曲線之乘法結果相加而求出第2插值蝕刻曲線。 Similarly, the two reference positions on the (-y) side are based on the distance between the target position P1 and the two reference positions P0 on the (-y) side of the four reference positions P0. The etching curve of P0 is linearly interpolated to obtain a second interpolation etching curve. Specifically, the distance between the reference position P0 and the target position P1 in the x direction is set to d3, and the x direction between the other reference position P0 and the target position P1 is set. When the distance is set to d4, (d4/(d3+d4)) is set as a weighting factor to the one reference position. The etching curve of P0 is multiplied. Further, (d3/(d3+d4)) is set as a weighting factor to be multiplied by the etching curve of the other reference position P0. Then, the second interpolation etching curve is obtained by adding the multiplication results of the two etching curves.

然後，藉由基於對象位置P1、與上述4個基準位置P0中之(-x)側或(+x)側之2個基準位置P0之間之y方向之距離，對第1插值蝕刻曲線及第2插值蝕刻曲線進行線性插值而獲取蝕刻曲線。具體而言，若將上述2個基準位置P0中之(+y)側之基準位置P0與對象位置P1之間之y方向之距離設為d5，且將(-y)之基準位置P0與對象位置P1之間之y方向之距離設為d6，則將(d6/(d5+d6))設為加權因子來與第1插值蝕刻曲線相乘。另外，將(d5/(d5+d6))設為加權因子來與第2插值蝕刻曲線相乘。然後，藉由將對2條插值蝕刻曲線之乘法結果相加(即基於已進行上述加權之多條蝕刻曲線)而求出蝕刻曲線。 Then, the first interpolation etching curve is based on the distance between the target position P1 and the y direction between the (-x) side or the (+x) side of the four reference positions P0. The second interpolation etch curve is linearly interpolated to obtain an etch curve. Specifically, the distance between the reference position P0 on the (+y) side of the two reference positions P0 and the target position P1 in the y direction is d5, and the reference position P0 of (-y) and the object are When the distance in the y direction between the positions P1 is d6, (d6/(d5+d6)) is set as a weighting factor and multiplied by the first interpolation etching curve. Further, (d5/(d5+d6)) is set as a weighting factor and multiplied by the second interpolation etching curve. Then, the etching curve is obtained by adding the multiplication results of the two interpolation etching curves (that is, based on the plurality of etching curves on which the above-described weighting has been performed).

於對象蝕刻特性獲取部218中，關於基準蝕刻特性中所包含之所有蝕刻曲線之種類，與上述同樣地，藉由獲取蝕刻曲線而求出對象蝕刻特性。上述處理係針對所有對象位置(所有部分圖案84之位置)進行，而獲取與複數個對象位置對應之複數個對象蝕刻特性。此外，配置於基板9(測試基板9a)之外緣附近、且未於周圍配置4個基準位置P0之對象位置之對象蝕刻特性係藉由利用該對象位置附近之1個或數個基準位置P0之基準蝕刻特性之運算而求出，或者作為最接近之基準位置P0之基準蝕刻特性而求出。 In the target etching characteristic acquisition unit 218, the target etching characteristics are obtained by acquiring an etching curve in the same manner as described above with respect to the types of all the etching curves included in the reference etching characteristics. The above processing is performed for all object positions (positions of all partial patterns 84), and a plurality of object etching characteristics corresponding to a plurality of object positions are acquired. Further, the target etching characteristic disposed in the vicinity of the outer edge of the substrate 9 (test substrate 9a) and not disposed around the four reference positions P0 is by using one or a plurality of reference positions P0 in the vicinity of the target position. The reference etching characteristic is calculated or calculated as the reference etching characteristic of the closest reference position P0.

當獲取複數個對象蝕刻特性以做準備時，與參照圖4所說明之上述處理同樣地，特性群組獲取部213藉由將與相互類似之對象蝕刻特性對應之對象位置包含於1個特性群組，而將複數個對象位置分成特定數量之決定特性群組(步驟S12~S16)。然後，利用分割資料修正部217，對設計資料之各分割資料基於與該分割資料對應之分割區域之最接近之對象位置、即表示該分割區域之位置之對象位置所屬之決定 特性群組之代表蝕刻特性而進行修正(步驟S17~S18)，並使用基於已修正完畢資料之描繪資料而進行對基板9之描繪(步驟S19、S20)。 When a plurality of object etching characteristics are acquired for preparation, the characteristic group acquiring unit 213 includes the object position corresponding to the object etching characteristics similar to each other in one characteristic group, similarly to the above-described processing described with reference to FIG. The group divides the plurality of object positions into a specific number of determination characteristic groups (steps S12 to S16). Then, the segmentation data correction unit 217 determines, based on the object position closest to the segmentation region corresponding to the segmentation data, the segmentation data of the design data, that is, the object position indicating the position of the segmentation region. The characteristic group is corrected by the representative etching characteristic (steps S17 to S18), and the drawing of the substrate 9 is performed using the drawing data based on the corrected data (steps S19 and S20).

如上所述，於利用對象蝕刻特性獲取部218之處理中，針對基板9上之複數個基準位置之各者而預先獲取基準蝕刻特性。然後，針對複數個對象位置之各者，基於各對象位置與複數個基準位置之位置關係而對複數個基準位置之複數個基準蝕刻特性進行加權，並且基於進行加權後之複數個基準蝕刻特性而求出該對象位置之對象蝕刻特性。由此，即便於在基板9上設定有複數個對象位置之情形時，亦能夠一面考慮因基板9上之位置之不同所致之蝕刻特性之差異，一面容易地獲取各對象位置之適當之對象蝕刻特性。假若於對與各分割區域對應之分割資料基於該分割區域之對象蝕刻特性而進行修正之情形時，則需要求出複數個已修正完畢分割資料，但於本處理例中，藉由基於對象蝕刻特性對複數個對象位置進行分組，而與上述情形相比，能夠效率極佳地進行蝕刻修正。此外，各對象位置之對象蝕刻特性可藉由除上述之雙線性插值以外之各種方法求出。 As described above, in the processing by the target etching characteristic acquisition unit 218, the reference etching characteristics are acquired in advance for each of the plurality of reference positions on the substrate 9. Then, for each of the plurality of object positions, a plurality of reference etching characteristics of the plurality of reference positions are weighted based on the positional relationship between each of the target positions and the plurality of reference positions, and based on the plurality of reference etching characteristics after the weighting The object etching characteristics of the object position are obtained. Therefore, even when a plurality of target positions are set on the substrate 9, it is possible to easily acquire an appropriate object of each object position while considering the difference in etching characteristics due to the difference in position on the substrate 9. Etching characteristics. If the segmentation data corresponding to each segmentation region is corrected based on the object etching characteristics of the segmentation region, it is necessary to obtain a plurality of corrected segmentation data, but in the present processing example, the object-based etching is performed. The characteristics are grouped by a plurality of object positions, and the etching correction can be performed efficiently as compared with the above case. Further, the object etching characteristics of the respective object positions can be obtained by various methods other than the above-described bilinear interpolation.

於上述處理例中，於利用描繪裝置1之描繪中，以於能夠容許之時間內完成設計資料之修正之方式，於圖4中之步驟S12中由操作者輸入設定群組數量，但亦可藉由其他方法決定設定群組數量。接下來，對利用圖3之群組數量決定部219決定設定群組數量之處理進行說明。 In the above-described processing example, in the drawing by the drawing device 1, the number of setting groups is input by the operator in step S12 in FIG. 4 in such a manner that the correction of the design data is completed within the allowable time. The number of groups is determined by other methods. Next, a process of determining the number of set groups by the group number determining unit 219 of FIG. 3 will be described.

於決定設定群組數量時，藉由群組數量決定部219之控制而將一群組數量設為臨時之設定群組數量(為較對象位置之總數小之數目，以下簡稱為「臨時群組數量」)，進行與上述步驟S13~S15同樣之處理。另外，針對所分組之該臨時群組數量之特性群組(決定特性群組)之各者求出代表蝕刻特性。然後，求出表示各特性群組之代表蝕刻特性、與屬於該特性群組之所有對象位置之對象蝕刻特性之差異度之值(此處，兩者之差異度越高則值越大)。 When it is decided to set the number of groups, the number of groups is set as the temporary group number by the control of the group number determining unit 219 (the number is smaller than the total number of the object positions, hereinafter referred to as "temporary group". The number ") is the same as the above steps S13 to S15. Further, representative etch characteristics are obtained for each of the attribute groups (determination characteristic groups) of the grouped temporary group number. Then, a value indicating the degree of difference between the representative etching characteristics of the respective characteristic groups and the target etching characteristics of all the object positions belonging to the characteristic group is obtained (here, the higher the difference between the two, the larger the value).

具體而言，針對蝕刻曲線之各種類，各特性群組之代表蝕刻特性之蝕刻曲線、與屬於該特性群組之各對象位置之對象蝕刻特性之蝕刻曲線之間之蝕刻量之差(絕對值)係於預先規定之複數個間隙寬度之各者求出。求出該複數個間隙寬度之該差之和作為該等2條蝕刻曲線之間之距離，並求出蝕刻曲線之所有種類之該距離之和作為上述代表蝕刻特性、與上述對象蝕刻特性之間之特性間距離。進而，獲取屬於該特性群組之所有對象位置之特性間距離之和作為表示該特性群組之代表蝕刻特性、與屬於該特性群組之所有對象位置之對象蝕刻特性之差異度之值。然後，求出表示該差異度之值之所有特性群組之和作為判定評估值。 Specifically, for each of the etching curves, the difference between the etching amount of the etching curve representing the etching characteristic of each characteristic group and the etching curve of the object etching characteristic of each object position belonging to the characteristic group (absolute value) ) is obtained for each of a plurality of predetermined gap widths. Calculating a sum of the differences of the plurality of gap widths as a distance between the two etching curves, and obtaining a sum of the distances of all kinds of etching curves as the representative etching characteristic and the object etching characteristic The distance between the characteristics. Further, the sum of the inter-attribute distances of all the object positions belonging to the characteristic group is obtained as a value indicating the difference between the representative etching characteristics of the characteristic group and the object etching characteristics of all the object positions belonging to the characteristic group. Then, the sum of all the characteristic groups indicating the value of the degree of difference is obtained as the determination evaluation value.

於群組數量決定部219中，針對複數個臨時群組數量之各者求出判定評估值。然後，將判定評估值成為特定之閾值以下、即判定評估值收斂某程度之最小之臨時群組數量決定為設定群組數量。於利用群組數量決定部219之上述處理中，決定設定群組數量之圖4之步驟S12之處理包含步驟S13~S15之處理，於將複數個臨時群組數量以升序進行變更之情形時，與決定設定群組數量同時完成複數個對象位置向該設定群組數量之特性群組(決定特性群組)之分組。 The group number determining unit 219 obtains a determination evaluation value for each of the plurality of temporary group numbers. Then, the number of temporary groups whose judgment evaluation value is equal to or less than a specific threshold value, that is, the judgment evaluation value converges to a certain extent is determined as the set group number. In the above-described processing by the group number determining unit 219, the process of step S12 of FIG. 4 for determining the number of group settings includes the processing of steps S13 to S15, and when the number of the plurality of temporary groups is changed in ascending order, The grouping of the characteristic groups (determining the characteristic group) of the plurality of object positions to the set group number is completed simultaneously with the decision to set the group number.

如上所述，於群組數量決定部219中，對於複數個臨時群組數量之各者，藉由使特性群組獲取部213進行對象位置之分組，而求出表示代表各特性群組之蝕刻特性、與屬於該特性群組之所有對象位置之對象蝕刻特性之差異度之值之所有特性群組之和作為判定評估值。然後，將判定評估值成為特定之閾值以下之最小之臨時群組數量決定為設定群組數量。由此，實現容易地決定較佳之群組數量。 As described above, in the group number determining unit 219, for each of the plurality of temporary group numbers, the characteristic group acquiring unit 213 performs grouping of the target positions to obtain an etching indicating that each of the characteristic groups is represented. The sum of all the characteristic groups of the characteristics, the values of the degree of difference in the etching characteristics of the objects belonging to all the object positions of the characteristic group, is used as the evaluation value. Then, the minimum number of temporary groups that determine that the evaluation value is below a specific threshold is determined as the set number of groups. Thus, it is easy to determine the preferred number of groups.

於上述處理例中，係將對象位置向決定特性群組分組完成之後，決定代表蝕刻特性，但亦可預先決定代表蝕刻特性。例如，於對藉由上述處理例而決定之各決定特性群組中所包含之對象位置於特定 之時序進行更新來作為每一固定期間之校準等時，進行按照圖4之處理。 In the above-described processing example, after the target position is grouped into the determination characteristic group, the representative etching characteristic is determined, but the representative etching characteristic may be determined in advance. For example, the object position included in each of the determination characteristic groups determined by the above processing example is specific When the timing is updated to be used as calibration for each fixed period, etc., the processing according to FIG. 4 is performed.

具體而言，與上述實施形態同樣地，藉由於測試基板9a上描繪測試圖案93，而獲取複數個對象位置之對象蝕刻特性(步驟S11)。繼而，將已經獲取之決定特性群組(以下稱為「更新前之決定特性群組」)之群組數量設為設定群組數量(步驟S12)而進行步驟S13、S14。此時，於步驟S13中，將更新前之各決定特性群組之代表蝕刻特性與一個特性群組建立關聯而作為群組蝕刻特性來利用。另外，將不重複進行步驟S13、S14(即，省略步驟S15)而藉由步驟S14之一次群組化處理所獲取之特性群組作為更新後之決定特性群組來處理。 Specifically, similarly to the above-described embodiment, the target etching characteristics of a plurality of target positions are acquired by drawing the test pattern 93 on the test substrate 9a (step S11). Then, the number of groups of the determined determination characteristic groups (hereinafter referred to as "pre-update determination characteristic group") is set as the set number of groups (step S12), and steps S13 and S14 are performed. At this time, in step S13, the representative etching characteristics of each of the determined characteristic groups before the update are associated with one characteristic group and used as the group etching characteristics. Further, the feature group acquired by the one-time grouping process of step S14 is not repeatedly performed in steps S13 and S14 (that is, step S15 is omitted), and is processed as the updated determination characteristic group.

於步驟S16中，將更新前之決定特性群組之代表蝕刻特性作為更新後之決定特性群組之代表蝕刻特性而直接利用。另外，於本處理例中，設計資料之複數個分割資料分別表示之複數個部分圖案84(分割圖案)亦相同。進而，基於更新前之決定特性群組之代表蝕刻特性之已修正完畢分割資料(使用該代表蝕刻特性而獲取之已修正完畢分割資料)已經存在。因此，於步驟S17、S18中，對於以更新後之各決定特性群組中所包含之對象位置作為最接近之對象位置之分割區域，直接利用基於與該更新後之決定特性群組對應之更新前之決定特性群組之代表蝕刻特性之已修正完畢分割資料。由此，能夠於極短時間完成分別與複數個分割區域對應之複數個已修正完畢分割資料之獲取(蝕刻修正)。將彙總複數個已修正完畢分割資料而得之新之已修正完畢資料轉換成描繪資料，並利用於對基板9之描繪中(步驟S19、S20)。 In step S16, the representative etching characteristic of the determined characteristic group before the update is directly used as the representative etching characteristic of the updated determined characteristic group. Further, in the present processing example, the plurality of partial patterns 84 (divided patterns) indicated by the plurality of divided data of the design data are also the same. Further, the corrected divided data (the corrected divided data obtained by using the representative etching characteristic) based on the representative etching characteristic of the determined characteristic group before the update has already existed. Therefore, in steps S17 and S18, the segmentation region corresponding to the target position included in each of the updated determination characteristic groups is directly used as the update corresponding to the updated determination characteristic group. The previously determined segmentation data of the representative etch characteristics of the characteristic group is corrected. Thereby, acquisition (etch correction) of a plurality of corrected divided data corresponding to a plurality of divided regions can be completed in a very short time. The new corrected data obtained by collecting a plurality of corrected divided data is converted into drawing data and used for drawing on the substrate 9 (steps S19 and S20).

另外，於在複數個描繪裝置1中將相同之設計圖案描繪於基板9上之情形時，亦可基於特定之複數個蝕刻特性而預先獲取複數個已修正完畢分割資料，並將該複數個蝕刻特性之各者作為更新前之決定特性群組之代表蝕刻特性來處理，於各描繪裝置1中進行按照圖4之上述 處理。於該情形時，能夠一面考慮複數個描繪裝置1中之蝕刻特性之分佈之不同，一面效率極佳地進行蝕刻修正。 In addition, when the same design pattern is drawn on the substrate 9 in the plurality of drawing devices 1, a plurality of corrected divided data may be acquired in advance based on the specific plurality of etching characteristics, and the plurality of etchings may be performed. Each of the characteristics is processed as a representative etching characteristic of the determined characteristic group before the update, and the above-described drawing device 1 performs the above-described operation according to FIG. deal with. In this case, the etching correction can be performed with great efficiency while considering the difference in the distribution of the etching characteristics in the plurality of drawing devices 1.

進而，亦可於排列有複數個部分圖案之設計圖案中包含複數個特性獲取用圖案。於該情形時，基於藉由描繪及蝕刻形成於基板9上之複數個測定圖案而獲取複數個對象蝕刻特性，並進行對象位置向決定特性群組之群組化處理、決定特性群組之代表蝕刻特性之獲取、及利用該代表蝕刻特性之已修正完畢資料之獲取。另外，每當基於該已修正完畢資料而於基板9上形成圖案時，測定該基板9上之複數個測定圖案而獲取複數個對象位置之對象蝕刻特性。然後，以上述決定特性群組之代表蝕刻特性作為群組蝕刻特性而進行群組化處理，於各特性群組中所包含之對象位置與對應於該特性群組之決定特性群組(更新前之決定特性群組)不同之情形時，將該特性群組設為更新後之決定特性群組而產生新之已修正完畢資料。由此，於產生由各種條件之變化所引起之蝕刻特性之分佈之變動之情形時，能夠迅速地獲取較佳之已修正完畢資料(於下述之檢查裝置1a中同樣)。 Further, a plurality of patterns for acquiring characteristics may be included in the design pattern in which a plurality of partial patterns are arranged. In this case, a plurality of target etching characteristics are obtained by drawing and etching a plurality of measurement patterns formed on the substrate 9, and the object position is determined to be grouped by the determination characteristic group, and the representative of the characteristic group is determined. Acquisition of etch characteristics, and acquisition of corrected data using the representative etch characteristics. Further, each time a pattern is formed on the substrate 9 based on the corrected data, a plurality of measurement patterns on the substrate 9 are measured to obtain object etching characteristics of a plurality of object positions. Then, the representative etch characteristic of the determined characteristic group is grouped as a group etch characteristic, and the object position included in each characteristic group and the determined characteristic group corresponding to the characteristic group (before update) When the determined characteristic group is different, the characteristic group is set as the updated determined characteristic group to generate new corrected data. Therefore, when a change in the distribution of the etching characteristics caused by a change in various conditions occurs, it is possible to quickly acquire the preferably corrected data (the same in the inspection apparatus 1a described below).

接下來，對本發明之第2實施形態之檢查裝置進行說明。圖12係表示檢查裝置1a之功能之框圖。檢查裝置1a係檢查藉由描繪設計圖案後之蝕刻而形成於基板9上之圖案之裝置。於檢查裝置1a中，比較基板9上之圖案、與下述之蝕刻修正後之設計資料。檢查裝置1a係與圖2所示之資料處理裝置2同樣成為一般之計算機系統之構成。 Next, an inspection apparatus according to a second embodiment of the present invention will be described. Fig. 12 is a block diagram showing the function of the inspection apparatus 1a. The inspection device 1a is a device that inspects a pattern formed on the substrate 9 by etching after designing a design pattern. In the inspection apparatus 1a, the pattern on the substrate 9 and the design data after the etching correction described below are compared. The inspection device 1a is configured as a general computer system similarly to the data processing device 2 shown in Fig. 2 .

檢查裝置1a包括資料修正部21a、實際圖像記憶部25、及缺陷檢測部26。資料修正部21a係與圖3所示之資料修正部21同樣地包括設計資料記憶部211、蝕刻特性記憶部212、特性群組獲取部213、及分割資料修正部217。實際圖像記憶部25記憶形成於基板9上之圖案之圖像資料即檢查圖像資料。缺陷檢測部26檢測形成於基板9上之該圖案之缺陷。於檢查裝置1a中，亦可設置圖3之對象蝕刻特性獲取部218及群 組數量決定部219。 The inspection device 1a includes a material correction unit 21a, an actual image storage unit 25, and a defect detection unit 26. Similarly to the material correction unit 21 shown in FIG. 3, the data correction unit 21a includes a design data storage unit 211, an etching characteristic storage unit 212, a characteristic group acquisition unit 213, and a division data correction unit 217. The actual image storage unit 25 stores the image data of the pattern formed on the substrate 9, that is, the inspection image data. The defect detecting unit 26 detects a defect of the pattern formed on the substrate 9. In the inspection apparatus 1a, the object etching characteristic acquisition unit 218 and the group of FIG. 3 may be provided. The group number determining unit 219.

接下來，一面參照圖13，一面對利用檢查裝置1a之檢查之流程進行說明。於利用檢查裝置1a之檢查中，進行與圖4之步驟S11~S18同樣之處理。具體而言，基於形成於測試基板9a上之測定圖案而獲取複數個對象位置之對象蝕刻特性，並記憶於蝕刻特性記憶部212中以做準備(步驟S11)。繼而，決定設定群組數量(步驟S12)。於特性群組獲取部213中，進行步驟S13~S15之處理。即，重複進行各特性群組之群組蝕刻特性之獲取、及基於各對象位置之對象蝕刻特性與各特性群組之群組蝕刻特性之間之類似度評估值之群組化處理直至滿足特定之結束條件為止，而決定決定特性群組。另外，決定決定特性群組之代表蝕刻特性(步驟S16)。 Next, a description will be given of a flow of inspection by the inspection apparatus 1a with reference to FIG. In the inspection by the inspection device 1a, the same processing as steps S11 to S18 of Fig. 4 is performed. Specifically, the target etching characteristics of a plurality of target positions are acquired based on the measurement pattern formed on the test substrate 9a, and are stored in the etching characteristic storage unit 212 to prepare (step S11). Then, it is decided to set the number of groups (step S12). The feature group acquisition unit 213 performs the processing of steps S13 to S15. That is, the group etching processing of each characteristic group is performed, and the grouping processing based on the similarity evaluation value between the object etching characteristics of each object position and the group etching characteristics of each characteristic group is repeated until the specificity is satisfied. The end of the condition is determined, and the determination of the characteristic group is determined. Further, it is decided to determine the representative etching characteristics of the characteristic group (step S16).

繼而，將設計圖案83之設計資料記憶於設計資料記憶部211中以做準備(步驟S17)。於分割資料修正部217中，自設計圖案83之設計資料提取分別表示複數個部分圖案84(參照圖10)之複數個分割資料。換句話說，將設計圖案83之設計資料分割成分別與複數個分割區域對應之複數個分割資料。而且，基於代表與各分割資料對應之分割區域之最接近之對象位置所屬之一個決定特性群組之蝕刻特性，利用分割資料修正部217修正該分割資料(即進行蝕刻修正)，而求出各部分圖案84之已修正完畢分割資料(步驟S18)。 Then, the design data of the design pattern 83 is memorized in the design data storage unit 211 to prepare (step S17). In the divided data correction unit 217, a plurality of pieces of divided data each representing a plurality of partial patterns 84 (see FIG. 10) are extracted from the design data of the design pattern 83. In other words, the design data of the design pattern 83 is divided into a plurality of pieces of divided data corresponding to a plurality of divided areas, respectively. Further, the segmentation data correction unit 217 corrects the segmentation data (that is, performs etching correction) based on the etching characteristic of the one of the closest target positions to which the segmentation region corresponding to each of the divided regions belongs, and obtains each The divided data of the partial pattern 84 has been corrected (step S18).

此處，檢查裝置1a之蝕刻修正之內容與描繪裝置1之蝕刻修正不同。具體而言，考慮於基板9之各部分圖案84之位置，於實際蝕刻時進行按照蝕刻特性所表示之蝕刻量之過度蝕刻。即，以使各部分圖案84中所包含之圖形要素成為實際蝕刻後之線寬或大小之方式，進行使各分割資料之圖形要素之線寬變細、或使圖形要素變小之修正。換句話說，對各分割資料進行與於描繪裝置1之上述步驟S18中對各分割資料進行之修正相反之修正。 Here, the content of the etching correction of the inspection apparatus 1a is different from the etching correction of the drawing apparatus 1. Specifically, in consideration of the position of each partial pattern 84 of the substrate 9, over etching is performed in accordance with the etching amount indicated by the etching property at the time of actual etching. In other words, the line width of the pattern element of each divided material is reduced or the pattern element is reduced, so that the pattern element included in each partial pattern 84 is the line width or size after the actual etching. In other words, the divided data is corrected in contrast to the correction of each divided data in the above-described step S18 of the drawing device 1.

於分割資料修正部217中，藉由彙總與複數個部分圖案84對應之複數個已修正完畢分割資料，而產生經修正之設計圖案83之設計資料即已修正完畢資料。該已修正完畢資料自資料修正部21發送至缺陷檢測部26。 The divided data correcting unit 217 generates a corrected design data of the corrected design pattern 83 by collecting a plurality of corrected divided data corresponding to the plurality of partial patterns 84. The corrected data is sent from the data correction unit 21 to the defect detecting unit 26.

繼而，獲取基板9上之蝕刻圖案之圖像資料，並將該圖像資料設為檢查圖像資料而記憶於實際圖像記憶部25中以做準備(步驟S21)。此處，基板9上之蝕刻圖案為如下圖案，其係藉由基於修正前之設計圖案83之設計資料對描繪於基板9上之抗蝕劑膜之圖案進行顯影來形成抗蝕劑圖案，並利用該抗蝕劑圖案實施蝕刻而形成於基板9上。步驟S21可與步驟S11~S18同時進行，亦可於步驟S11~S18之前進行。該檢查圖像資料可於除檢查裝置1a以外之裝置獲取，亦可於檢查裝置1a獲取。於在檢查裝置1a獲取檢查圖像資料之情形時，於檢查裝置1a設置獲取檢查圖像資料之攝像部。此外，於上述步驟S11中，於在檢查裝置1a獲取測定圖案96之圖像之情形時，較佳為亦於檢查裝置1a進行檢查圖像資料之獲取。 Then, the image data of the etching pattern on the substrate 9 is acquired, and the image data is set as the inspection image data and stored in the actual image storage unit 25 to prepare (step S21). Here, the etching pattern on the substrate 9 is a pattern in which a resist pattern is formed by developing a pattern of a resist film drawn on the substrate 9 based on design data of the design pattern 83 before correction, and Etching is performed on the substrate 9 by etching using the resist pattern. Step S21 can be performed simultaneously with steps S11 to S18, or before steps S11 to S18. The inspection image data can be acquired by a device other than the inspection device 1a, or can be acquired by the inspection device 1a. When the inspection apparatus 1a acquires the inspection image data, the inspection apparatus 1a is provided with an imaging unit that acquires the inspection image data. Further, in the above-described step S11, when the inspection apparatus 1a acquires the image of the measurement pattern 96, it is preferable that the inspection apparatus 1a also acquires the inspection image data.

檢查圖像資料自實際圖像記憶部25發送至缺陷檢測部26。於缺陷檢測部26中，藉由比較該檢查圖像資料、與自資料修正部21a發送之已修正完畢資料(即已藉由資料修正部21a進行蝕刻修正之設計資料)，而檢測出形成於基板9上之蝕刻圖案之缺陷(步驟S22)。如上所述，該已修正完畢資料係以使各部分圖案84之圖形要素成為實際蝕刻後之線寬或大小之方式進行修正而得，因此於缺陷檢測部26中，檢測檢查圖像資料與已修正完畢資料之差異作為基板9上之蝕刻圖案之缺陷。 The inspection image data is sent from the actual image storage unit 25 to the defect detecting unit 26. The defect detecting unit 26 detects that the inspection image data is compared with the corrected data transmitted from the data correcting unit 21a (that is, the design data that has been etched and corrected by the data correcting unit 21a). Defects in the etching pattern on the substrate 9 (step S22). As described above, the corrected data is obtained by correcting the pattern elements of the partial patterns 84 so as to be the line width or size after the actual etching. Therefore, in the defect detecting unit 26, the inspection image data is detected. The difference in the corrected data is used as a defect in the etching pattern on the substrate 9.

如以上所說明般，於資料修正部21a中，藉由將與相互類似之對象蝕刻特性對應之對象位置包含於1個特性群組，而將複數個對象位置分成特定數量之決定特性群組。然後，藉由分割資料修正部217， 對設計資料之各分割資料基於代表與該分割資料對應之分割區域之最接近之對象位置所屬之一個決定特性群組之蝕刻特性而進行修正。由此，能夠效率佳地進行高精度之蝕刻修正。另外，於檢查裝置1a中，能夠抑制假設於比較檢查圖像資料與未進行蝕刻修正之設計資料之情形時所檢測出之誤報(檢測出因過度蝕刻所引起之假缺陷)，而高精度地進行基板9上之蝕刻圖案之檢查。進而，藉由蝕刻修正之效率化而能夠於短時間進行圖案之檢查。 As described above, the data correcting unit 21a divides the plurality of target positions into a specific number of determination characteristic groups by including the target positions corresponding to the object etching characteristics similar to each other in one characteristic group. Then, by dividing the data modification unit 217, Each of the divided data of the design data is corrected based on the etching characteristic of one of the determined characteristic groups to which the closest target position of the divided region corresponding to the divided data belongs. Thereby, highly accurate etching correction can be performed efficiently. Further, in the inspection apparatus 1a, it is possible to suppress a false alarm (detecting a false defect due to over-etching) which is assumed to be a case where the inspection image data is compared with the design data which is not subjected to the etching correction, and the high-precision The inspection of the etching pattern on the substrate 9 is performed. Further, the pattern can be inspected in a short time by the efficiency of the etching correction.

於上述描繪裝置1及檢查裝置1a中，能夠進行各種變更。 Various changes can be made in the drawing device 1 and the inspection device 1a described above.

圖4及圖13中之處理之順序可適當變更。例如，步驟S17與步驟S11~S16可並行進行，步驟S17亦可於步驟S11~S16之前進行。 The order of the processing in FIGS. 4 and 13 can be changed as appropriate. For example, step S17 and steps S11 to S16 may be performed in parallel, and step S17 may be performed before steps S11 to S16.

設計圖案83之複數個部分圖案84(基板9上之複數個部分)之配置及數量並不限定於圖10所示之情形，可適當變更。測試基板9a上之複數個特性獲取用圖案95之配置及數量亦不限定於圖5所示之情形，可適當變更。特性獲取用圖案95不一定必須以固定之間距排列。例如，可於基板9上於部分之良率較高之區域較疏地配置特性獲取用圖案95，於部分之良率低之區域較密地配置特性獲取用圖案95。 The arrangement and number of the plurality of partial patterns 84 (the plurality of portions on the substrate 9) of the design pattern 83 are not limited to those shown in FIG. 10, and can be appropriately changed. The arrangement and number of the plurality of characteristic acquisition patterns 95 on the test substrate 9a are not limited to those shown in FIG. 5, and can be appropriately changed. The feature acquisition patterns 95 do not necessarily have to be arranged at a fixed distance. For example, the characteristic acquisition pattern 95 can be arranged relatively thinly on the substrate 9 in a region where the yield is high, and the characteristic acquisition pattern 95 can be densely arranged in a portion where the yield is low.

於設計圖案83中，亦可包含互為相同之一個種類之複數個部分圖案84、及互為相同之另一個種類之複數個部分圖案84。於該情形時，於相同之複數個部分圖案84中，亦能夠對最接近之對象位置屬於相同之特性群組之部分圖案84，利用相同之已修正完畢分割資料而效率佳地進行高精度之蝕刻修正。 The design pattern 83 may include a plurality of partial patterns 84 of one type that are identical to each other, and a plurality of partial patterns 84 of another type that are identical to each other. In this case, in the same plurality of partial patterns 84, it is also possible to perform high-accuracy with the same corrected segmentation data for the partial patterns 84 of the same characteristic group whose closest object positions belong to the same. Etch correction.

於分割資料修正部217中，亦可僅於以一個決定特性群組中所包含之對象位置作為最接近之對象位置之2個以上之部分區域中之1個部分區域配置已修正完畢之部分圖案，其他部分區域僅具有配置有與配置於該1個部分區域者相同之部分圖案之主旨之資訊。於該情形時，於資料轉換部22進行已修正完畢資料之轉換時，將與配置於上述1個 部分區域之已修正完畢之部分圖案之名冊資料相同之名冊資料配置於該其他部分區域。 In the segmentation data correction unit 217, the corrected partial pattern may be disposed only in one of the partial regions of the two or more partial regions that are the closest target positions in the target region included in one determination characteristic group. The other partial regions only have information on the purpose of arranging the same partial pattern as those disposed in the one partial region. In this case, when the data conversion unit 22 performs conversion of the corrected data, it is placed in the above-mentioned one. The roster data of the same part of the corrected pattern of the partial area is arranged in the other part of the area.

描繪裝置1可利用於向除基板9以外之各種對象物上描繪圖案。檢查裝置1a亦可利用於藉由蝕刻而形成於除基板9以外之各種對象物上之圖案之檢查。資料修正部21、21a可作為自描繪裝置1及檢查裝置1a獨立之資料修正裝置而利用。該資料修正裝置可利用於藉由蝕刻而形成於除基板9以外之各種對象物上之圖案之設計資料之修正。 The drawing device 1 can be used to draw a pattern onto various objects other than the substrate 9. The inspection apparatus 1a can also be used for inspection of a pattern formed on various objects other than the substrate 9 by etching. The data correction units 21 and 21a can be used as data correction devices independent of the drawing device 1 and the inspection device 1a. The data correction device can be used for correction of design data of a pattern formed on various objects other than the substrate 9 by etching.

上述實施形態及各變化例之構成只要不相互矛盾，則可適當組合。 The configurations of the above-described embodiments and the respective modifications can be appropriately combined as long as they do not contradict each other.

詳細地描述了發明，但上述之說明為例示而並非為限定性者。因此，可說只要不脫離本發明之範圍則能夠有複數種變形或形態。 The invention has been described in detail, but the foregoing description is illustrative and not restrictive. Therefore, it can be said that a plurality of types of deformations or forms can be obtained without departing from the scope of the invention.

2‧‧‧資料處理裝置 2‧‧‧ data processing device

21‧‧‧資料修正部 21‧‧‧ Data Correction Department

22‧‧‧資料轉換部 22‧‧‧Data Conversion Department

31‧‧‧描繪控制器 31‧‧‧Drawing controller

211‧‧‧設計資料記憶部 211‧‧‧Design Data Memory Department

212‧‧‧蝕刻特性記憶部 212‧‧‧ Etching Characteristics Memory

213‧‧‧特性群組獲取部 213‧‧‧Characteristic Group Acquisition Department

214‧‧‧群組特性獲取部 214‧‧‧Group Feature Acquisition Department

215‧‧‧群組化處理部 215‧‧‧Group Processing Department

216‧‧‧重複控制部 216‧‧‧Repetitive Control Department

217‧‧‧分割資料修正部 217‧‧‧Divided Data Correction Department

218‧‧‧對象蝕刻特性獲取部 218‧‧‧Object etching characteristics acquisition unit

219‧‧‧群組數量決定部 219‧‧‧Group Quantity Determination Department

Claims (17)

一種資料修正裝置，其係修正藉由蝕刻而形成於對象物上之圖案之設計資料者，且包括：設計資料記憶部，其記憶藉由蝕刻而形成於對象物上之圖案之設計資料；蝕刻特性記憶部，其將針對上述對象物上之複數個對象位置之各者之蝕刻特性作為對象蝕刻特性，而記憶針對上述複數個對象位置之複數個對象蝕刻特性；特性群組獲取部，其藉由將與相互類似之對象蝕刻特性對應之對象位置包含於1個特性群組，而將上述複數個對象位置分成少於上述複數個對象位置之特定數量之特性群組；及分割資料修正部，其將上述設計資料分割成與設定於上述對象物上之複數個分割區域對應之複數個分割資料，並基於代表與上述各分割資料對應之分割區域之最接近之對象位置所屬之一個特性群組之蝕刻特性而修正各分割資料。 A data correction device for correcting design information of a pattern formed on an object by etching, and comprising: a design data storage portion that memorizes design data of a pattern formed on the object by etching; etching The characteristic memory unit stores, as the target etching characteristic, an etching characteristic of each of a plurality of object positions on the object, and stores a plurality of object etching characteristics for the plurality of object positions; and the characteristic group acquiring unit borrows The object position corresponding to the object etching characteristics similar to each other is included in one characteristic group, and the plurality of object positions are divided into a specific number of characteristic groups smaller than the plurality of object positions; and the segmentation data correction unit, And dividing the design data into a plurality of divided data corresponding to the plurality of divided regions set on the object, and based on a characteristic group to which the closest object position representing the divided region corresponding to each of the divided materials belongs Each of the divided data is corrected by the etching characteristics. 如請求項1之資料修正裝置，其中上述特性群組獲取部包括：群組特性獲取部，其獲取與各特性群組建立關聯之蝕刻特性作為群組蝕刻特性；及群組化處理部，其基於表示各對象蝕刻特性與上述各特性群組之上述群組蝕刻特性之類似度之值，而進行將與上述各對象蝕刻特性對應之對象位置包含於上述特定數量之特性群組之任一者之群組化處理。 The data correction device of claim 1, wherein the characteristic group acquisition unit includes: a group characteristic acquisition unit that acquires an etching characteristic associated with each characteristic group as a group etching characteristic; and a grouping processing unit And performing, according to a value indicating the similarity between the etching characteristics of the respective objects and the group etching characteristics of the respective characteristic groups, the object position corresponding to each of the object etching characteristics is included in any one of the specific number of characteristic groups Grouping processing. 如請求項2之資料修正裝置，其中上述特性群組獲取部更包括重複控制部，該重複控制部係使利用上述群組特性獲取部之上述群組蝕刻特性之獲取、及利用上述群組化處理部之上述群組化 處理重複進行直至滿足特定條件為止；上述群組特性獲取部自藉由前一上述群組化處理而包含於上述各特性群組中之對象位置之對象蝕刻特性，求出上述各特性群組之上述群組蝕刻特性。 The data correction device of claim 2, wherein the characteristic group acquisition unit further includes a repetition control unit that acquires the group etching characteristic by the group characteristic acquisition unit and uses the grouping The above grouping of the processing unit The process is repeated until the specific condition is satisfied. The group characteristic acquisition unit obtains the target etch characteristics of the target positions included in the respective characteristic groups by the previous grouping process. The above group etching characteristics. 如請求項1之資料修正裝置，其中上述設計資料之上述複數個分割資料各自表示之分割圖案為相同。 The data correction device of claim 1, wherein the plurality of divided data of the design data respectively indicate that the division pattern is the same. 如請求項1之資料修正裝置，其更包括對象蝕刻特性獲取部，該對象蝕刻特性獲取部係針對上述對象物上之複數個基準位置之各者預先獲取基準蝕刻特性，並針對上述複數個對象位置之各者，基於各對象位置與上述複數個基準位置之位置關係，而對上述複數個基準位置之複數個基準蝕刻特性進行加權，並且基於進行加權後之上述複數個基準蝕刻特性而求出上述各對象位置之上述對象蝕刻特性。 The data correction device of claim 1, further comprising: a target etching characteristic acquisition unit that acquires a reference etching characteristic for each of a plurality of reference positions on the object and for the plurality of objects Each of the positions is based on a positional relationship between each of the target positions and the plurality of reference positions, and weights a plurality of reference etching characteristics of the plurality of reference positions, and obtains the plurality of reference etching characteristics after the weighting The above-described object etching characteristics of the respective object positions. 如請求項1之資料修正裝置，其更包括群組數量決定部，該群組數量決定部係針對複數個臨時群組數量之各者，使上述特性群組獲取部進行分組，求出表示代表各特性群組之蝕刻特性、與屬於上述各特性群組之所有對象位置之對象蝕刻特性之差異度之值之所有特性群組之和作為評估值，並將上述評估值成為特定閾值以下之最小之臨時群組數量決定為上述特定數量。 The data correction device of claim 1, further comprising a group number determining unit that groups the characteristic group acquiring unit for each of the plurality of temporary group numbers to obtain a representative representative The sum of all the characteristic groups of the etching characteristics of each characteristic group and the value of the difference in the etching characteristics of the object belonging to all the object positions of the above-mentioned respective characteristic groups is used as an evaluation value, and the evaluation value is made the minimum value below a certain threshold. The number of temporary groups is determined by the above specific number. 一種描繪裝置，其係於對象物上描繪圖案者，且包括：如請求項1至6中任一項之資料修正裝置；光源；光調變部，其基於已藉由上述資料修正裝置修正之設計資料而調變來自上述光源之光；及掃描機構，於對象物上掃描已藉由上述光調變部調變之光。 A drawing device for drawing a pattern on an object, and comprising: the data correcting device according to any one of claims 1 to 6; a light source; and a light modulation portion based on the correction by the data correcting device Designing the data to modulate the light from the light source; and scanning the mechanism to scan the object for the light modulated by the light modulation portion. 一種檢查裝置，其係檢查藉由蝕刻而形成於對象物上之圖案 者，且包括：如請求項1至6中任一項之資料修正裝置；實際圖像記憶部，其記憶藉由蝕刻而形成於對象物上之圖案之圖像資料即檢查圖像資料；及缺陷檢測部，其藉由對已利用上述資料修正裝置修正之設計資料與上述檢查圖像資料進行比較，而檢測形成於上述對象物上之上述圖案之缺陷。 An inspection device for inspecting a pattern formed on an object by etching And the data correction device according to any one of claims 1 to 6, wherein the actual image storage unit stores image data of a pattern formed on the object by etching, that is, inspection image data; The defect detecting unit detects a defect of the pattern formed on the object by comparing the design data corrected by the data correcting device with the inspection image data. 一種資料修正方法，其係修正藉由蝕刻而形成於對象物上之圖案之設計資料者，且包括如下步驟：a)準備藉由蝕刻而形成於對象物上之圖案之設計資料；b)將針對上述對象物上之複數個對象位置之各者之蝕刻特性作為對象蝕刻特性，而準備針對上述複數個對象位置之複數個對象蝕刻特性；c)藉由將與相互類似之對象蝕刻特性對應之對象位置包含於1個特性群組，而將上述複數個對象位置分成少於上述複數個對象位置之特定數量之特性群組；及d)將上述設計資料分割成與設定於上述對象物上之複數個分割區域對應之複數個分割資料，並基於代表與上述各分割資料對應之分割區域之最接近之對象位置所屬之一個特性群組之蝕刻特性而修正各分割資料。 A data correction method for correcting design information of a pattern formed on an object by etching, and comprising the steps of: a) preparing design information of a pattern formed on an object by etching; b) An etching characteristic of each of a plurality of object positions on the object is prepared as a target etching characteristic, and a plurality of object etching characteristics for the plurality of object positions are prepared; c) by corresponding object etching characteristics The object position is included in one characteristic group, and the plurality of object positions are divided into a specific number of characteristic groups smaller than the plurality of object positions; and d) the design data is divided into and set on the object The plurality of divided data corresponding to the plurality of divided regions are corrected, and each of the divided data is corrected based on an etching characteristic of a characteristic group to which the closest target position of the divided region corresponding to each of the divided regions belongs. 如請求項9之資料修正方法，其中上述c)步驟包括如下步驟：c1)獲取與各特性群組建立關聯之蝕刻特性作為群組蝕刻特性；及c2)基於表示各對象蝕刻特性與上述各特性群組之上述群組蝕刻特性之類似度之值，而進行將與上述各對象蝕刻特性對應之對象位置包含於上述特定數量之特性群組之任一者之群組化處 理。 The method for modifying data according to claim 9, wherein the step c) comprises the steps of: c1) acquiring an etching characteristic associated with each characteristic group as a group etching characteristic; and c2) indicating an etching characteristic of each object and the above characteristics. And setting a target position corresponding to each of the object etching characteristics to a grouping of any one of the specific number of characteristic groups, the value of the similarity of the group etching characteristics of the group Reason. 如請求項10之資料修正方法，其中上述c)步驟更包括如下步驟：重複進行上述c1)步驟之上述群組蝕刻特性之獲取、及上述c2)步驟之上述群組化處理，直至滿足特定條件為止，且於上述c1)步驟中，自藉由前一上述群組化處理而包含於上述各特性群組中之對象位置之對象蝕刻特性，求出上述各特性群組之上述群組蝕刻特性。 The data modification method of claim 10, wherein the step c) further comprises the steps of: repeating the obtaining of the group etching characteristic of the step c1) and the grouping processing of the step c2) until a specific condition is satisfied. So far, in the step c1), the group etching characteristics of the respective characteristic groups are obtained from the target etching characteristics of the target positions included in the respective characteristic groups by the previous grouping processing. . 如請求項9之資料修正方法，其中上述設計資料之上述複數個分割資料各自表示之分割圖案為相同。 The data correction method of claim 9, wherein the plurality of divided data of the design data respectively indicate that the division pattern is the same. 如請求項9之資料修正方法，其中針對上述對象物上之複數個基準位置之各者而預先獲取基準蝕刻特性，且於上述b)步驟中，針對上述複數個對象位置之各者，基於各對象位置與上述複數個基準位置之位置關係，而對上述複數個基準位置之複數個基準蝕刻特性進行加權，並且基於進行加權後之上述複數個基準蝕刻特性而求出上述各對象位置之上述對象蝕刻特性。 The data correction method of claim 9, wherein the reference etching characteristic is acquired in advance for each of the plurality of reference positions on the object, and in the step b), each of the plurality of object positions is based on each And determining a positional relationship between the target position and the plurality of reference positions, and weighting a plurality of reference etching characteristics of the plurality of reference positions, and obtaining the object of each of the target positions based on the plurality of weighted reference etching characteristics Etching characteristics. 如請求項9之資料修正方法，其中針對複數個臨時群組數量之各者執行上述c)步驟而進行分組，求出表示代表各特性群組之蝕刻特性、與屬於上述各特性群組之所有對象位置之對象蝕刻特性之差異度之值之所有特性群組之和作為評估值，並將上述評估值成為特定閾值以下之最小之臨時群組數量決定為上述特定數量。 The data correction method of claim 9, wherein the group c) is performed for each of the plurality of temporary group numbers, and the etching characteristics representing the characteristic groups and all the groups belonging to the above characteristic groups are obtained. The sum of all the characteristic groups of the values of the difference in the etching characteristics of the object at the object position is used as the evaluation value, and the minimum number of temporary groups whose evaluation values are below a certain threshold is determined as the above specific number. 一種描繪方法，其係於對象物上描繪圖案者，且包括如下步驟：藉由如請求項9至14中任一項之資料修正方法而修正設計資料；及 基於經修正之上述設計資料而於對象物上掃描經調變之光。 A drawing method for drawing a pattern on an object, and comprising the steps of: modifying the design data by the data correction method according to any one of claims 9 to 14; The modulated light is scanned on the object based on the modified design data. 一種檢查方法，其係檢查藉由蝕刻而形成於對象物上之圖案者，且包括如下步驟：藉由如請求項9至14中任一項之資料修正方法而修正設計資料；及藉由比較經修正之上述設計資料與藉由蝕刻而形成於對象物上之圖案之圖像資料即檢查圖像資料，而檢測形成於上述對象物上之上述圖案之缺陷。 An inspection method for inspecting a pattern formed on an object by etching, and comprising the steps of: modifying the design data by the data correction method according to any one of claims 9 to 14; and by comparing The corrected design data and the image data of the pattern formed on the object by etching are inspection image data, and the defects of the pattern formed on the object are detected. 一種記錄媒體，其係記錄對藉由蝕刻而形成於對象物上之圖案之設計資料進行修正之程式者，且利用計算機之上述程式之執行，係使上述計算機執行如下步驟：a)準備藉由蝕刻而形成於對象物上之圖案之設計資料；b)將針對上述對象物上之複數個對象位置之各者之蝕刻特性作為對象蝕刻特性，而準備針對上述複數個對象位置之複數個對象蝕刻特性；c)藉由將與相互類似之對象蝕刻特性對應之對象位置包含於1個特性群組，而將上述複數個對象位置分成少於上述複數個對象位置之特定數量之特性群組；及d)將上述設計資料分割成與設定於上述對象物上之複數個分割區域對應之複數個分割資料，並基於代表與上述各分割資料對應之分割區域之最接近之對象位置所屬之一個特性群組之蝕刻特性而修正各分割資料。 A recording medium for recording a program for correcting design data of a pattern formed on an object by etching, and executing the above program of the computer causes the computer to perform the following steps: a) preparing for Designing a pattern of a pattern formed on the object by etching; b) preparing an etching effect for each of the plurality of object positions on the object as a target etching characteristic, and preparing a plurality of object etching for the plurality of object positions a feature; c) dividing the plurality of object positions into a specific number of characteristic groups of the plurality of object positions by including the object positions corresponding to the object etching characteristics similar to each other in one characteristic group; d) dividing the design data into a plurality of divided data corresponding to a plurality of divided regions set on the object, and based on a characteristic group to which the closest object position representing the divided region corresponding to each of the divided materials belongs The segmentation data is corrected by the etching characteristics of the group.
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