TW201629141A - Dicing film - Google Patents

Dicing film Download PDF

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Publication number
TW201629141A
TW201629141A TW104137644A TW104137644A TW201629141A TW 201629141 A TW201629141 A TW 201629141A TW 104137644 A TW104137644 A TW 104137644A TW 104137644 A TW104137644 A TW 104137644A TW 201629141 A TW201629141 A TW 201629141A
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film
substrate
meth
resin
dicing
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TW104137644A
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TWI642717B (en
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長尾佳典
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住友電木股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Laminated Bodies (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The present invention provides a base film for dicing film characterized in that the base film comprises a base layer, a surface layer arranged on one main layer of the base film, and the base layer contains low-density polyethylene and the surface layer contains ionomer resin, and MFR (measuring method: compliance to JIS K 7210, measuring condition: temperature 190 DEG C, loading 21.18 N) is 3 g/10 min or less. In addition, the present invention provides dicing film in which adhesive layer is arranged on the main layer locating the surface layer side of the base film for dicing film, and a method for blade dicing using the dicing film.

Description

切割膜片Cutting diaphragm

本發明係關於一種切割膜片。 本申請係基於2014年11月19日在日本所提申之日本特願2014－234102號而主張優先權，並在此引用其內容。The present invention relates to a dicing film. The present application claims priority based on Japanese Patent Application No. 2014-234102, filed on Jan.

以往，如手機之相機模組等般將電子元件、光學元件安裝於小的基板上而製作模組化的零件時，使用將零件安裝用的多塊基板整合成1塊而以一體狀態形成的集合基板的方法為已知。In the past, when electronic components and optical components were mounted on a small substrate as in a camera module of a mobile phone, and a modular component was produced, a plurality of substrates for mounting components were integrated into one piece and formed in an integrated state. A method of collecting substrates is known.

使用集合基板而形成安裝完成之基板的方法，係將零件安裝於集合基板，然後，於將集合基板保持在表面具有黏接性之切割膜片上的狀態下，將集合基板進行切割而單片化，而形成於各個單片化基板安裝了零件的安裝完成之基板。A method of forming a mounted substrate by using a collective substrate is to mount the component on the collective substrate, and then to cut the collective substrate into a single piece while holding the collective substrate on the dicing film having adhesiveness on the surface. The substrate is mounted on each of the singulated substrates to which the components are mounted.

關於該等半導體裝置之製造中所使用之半導體基板加工用切割膜片，近年來已進行了各種研究(例如，參照專利文獻1)。Various studies have been conducted in recent years on the dicing film for semiconductor substrate processing used in the manufacture of these semiconductor devices (for example, refer to Patent Document 1).

該半導體基板加工用切割膜片，一般而言，係具有基材(膜基材)與於該基材上形成之黏接層者，並藉由黏接層固定基板。 黏接層與基板之間須有足以使切割時已單片化之基板不致飛散(所謂的晶片飛散)的程度的密合性。 又，黏接層通常由含有具黏接性之基礎樹脂及光硬化性樹脂等之樹脂組成物構成，藉此使半導體基板的切割步驟後可輕易地拾取半導體晶片。亦即，切割步驟後對於黏接層施加能量的話，樹脂組成物發生硬化且黏接層的黏接性降低，使半導體元件的拾取變得容易。The dicing film for processing a semiconductor substrate generally has a substrate (film substrate) and an adhesive layer formed on the substrate, and the substrate is fixed by an adhesive layer. Adhesion between the adhesive layer and the substrate must be sufficient to prevent the substrate which has been diced at the time of dicing from scattering (so-called wafer scattering). Further, the adhesive layer is usually composed of a resin composition containing a base resin having an adhesive property and a photocurable resin, whereby the semiconductor wafer can be easily picked up after the dicing step of the semiconductor substrate. In other words, when energy is applied to the adhesive layer after the dicing step, the resin composition is hardened and the adhesiveness of the adhesive layer is lowered to facilitate picking up of the semiconductor element.

順帶一提，切割步驟中產生的來自切割膜片的切削碎屑(基材屑)會污染基板，並降低安裝完成之基板的成品率，因此盡量減少切削碎屑的產生為必要。又，為了提高基板的揀取精度，並進一步提高生產性，對於切割膜片亦要求無裂開、切斷，並能均勻且寬廣平滑地擴張的特性(以下稱為擴展性)。又，切割膜片通常捲成輥狀而製造、保管、搬運等，若發生膜片彼此的黏連的話會導致品質的降低，因此亦要求抗黏連性。Incidentally, the cutting debris (substrate scrap) from the dicing film generated in the cutting step contaminates the substrate and reduces the yield of the mounted substrate, so that it is necessary to minimize the generation of cutting debris. In addition, in order to improve the picking accuracy of the substrate and further improve the productivity, the dicing film is also required to have a property of no cracking and cutting, and which can be uniformly and broadly and smoothly expanded (hereinafter referred to as expandability). Further, the dicing film is usually wound into a roll, and is manufactured, stored, transported, etc., and if the film adheres to each other, the quality is lowered, and therefore the blocking resistance is also required.

因應該等要求已有各種切割膜片被提出。例如，專利文獻2中，有人提案了一種切割膜片，其特徵為：利用金屬離子將以乙烯與(甲基)丙烯酸作為聚合物之結構成分之共聚物進行交聯而得，包含離子聚合物90～70質量%、及含有聚醚成分之抗靜電樹脂10～30質量%。 [專利文獻]Various cutting diaphragms have been proposed as they should be required. For example, Patent Document 2 proposes a dicing film characterized in that a copolymer of ethylene and (meth)acrylic acid as a structural component of a polymer is crosslinked by a metal ion, and an ionic polymer is contained. 90 to 70% by mass and 10 to 30% by mass of the antistatic resin containing a polyether component. [Patent Literature]

[專利文獻1] 日本特開2009－245989號公報 [專利文獻2] 日本特開2011－210887號公報[Patent Document 1] Japanese Laid-Open Patent Publication No. 2009-245989 (Patent Document 2) Japanese Laid-Open Patent Publication No. 2011-210887

[發明所欲解決之課題][Problems to be solved by the invention]

本發提供一種切割膜片，可抑制切割時的晶片飛散，且切割時的切削碎屑的產生的抑制效果高。 [解決課題之手段]The present invention provides a dicing film which suppresses scattering of a wafer during dicing and which has a high suppressing effect on generation of cutting debris at the time of cutting. [Means for solving the problem]

亦即，本發明如下所述。 (1)一種切割膜片用基材膜，包含基材層與於該基材層之一主面上設置之表面層； 其特徵為： 該基材層含有低密度聚乙烯， 該表面層含有離子聚合物樹脂， 該離子聚合物樹脂之MFR(測定方法：根據JIS K 7210，測定條件：溫度190℃、荷重21.18N)為3g/10min以下。 (2)如(1)之切割膜片用基材膜，其中，該離子聚合物樹脂係利用金屬離子將以乙烯、(甲基)丙烯酸、及(甲基)丙烯酸烷基酯作為聚合物之結構成分之三元共聚物進行交聯而得者。 (3)如(2)之切割膜片用基材膜，其中，該金屬離子係鋅離子。 (4)如(1)至(3)中任一項之切割膜片用基材膜，其中，該低密度聚乙烯之熔點為90℃以上140℃以下。 (5)如(1)至(4)中任一項之切割膜片用基材膜，其中，該基材層含有抗靜電劑。 (6)如(1)至(5)中任一項之切割膜片用基材膜，其中，該表面層係藉由切割刀片切入之切入層。 (7)一種切割膜片，係於如(1)至(6)中任一項之切割膜片用基材膜之表面層側之主面上設置有黏接層。 (8)如(7)之切割膜片，其中，該黏接層含有具黏接性之基礎樹脂。 (9)如(7)或(8)之切割膜片，其中，該基礎樹脂係丙烯酸系樹脂。 (10)如(7)至(9)中任一項之切割膜片，其中，該黏接層更含有藉由能量的施加而硬化之硬化性樹脂。 (11)一種附半導體基板之切割膜片，係於如(7)至(10)中任一項之切割膜片上疊層了半導體基板。 (12)一種刀片切割方法，係使用如(7)至(11)中任一項之切割膜片。 [發明之效果]That is, the present invention is as follows. (1) A substrate film for a dicing film comprising a substrate layer and a surface layer provided on one main surface of the substrate layer; wherein the substrate layer contains a low density polyethylene, and the surface layer contains The ionic polymer resin, the MFR of the ionic polymer resin (measurement method: according to JIS K 7210, measurement conditions: temperature: 190 ° C, load: 21.18 N) is 3 g/10 min or less. (2) The base film for a dicing film according to (1), wherein the ionic polymer resin uses ethylene, (meth)acrylic acid, and alkyl (meth)acrylate as a polymer by metal ions. The terpolymer of the structural component is obtained by crosslinking. (3) The substrate film for a dicing film according to (2), wherein the metal ion is a zinc ion. (4) The base film for a dicing film according to any one of (1) to (3), wherein the low-density polyethylene has a melting point of 90 ° C or more and 140 ° C or less. (5) The base film for a dicing film according to any one of (1) to (4), wherein the base material layer contains an antistatic agent. (6) The substrate film for a dicing film according to any one of (1) to (5) wherein the surface layer is a cut-in layer cut by a dicing blade. (7) A dicing film which is provided with an adhesive layer on the main surface side of the surface layer side of the base film for a dicing film according to any one of (1) to (6). (8) The dicing film of (7), wherein the adhesive layer contains a base resin having adhesiveness. (9) The dicing film of (7) or (8), wherein the base resin is an acrylic resin. (10) The dicing film according to any one of (7) to (9), wherein the adhesive layer further contains a curable resin which is hardened by application of energy. (11) A dicing film with a semiconductor substrate on which a semiconductor substrate is laminated on a dicing film according to any one of (7) to (10). (12) A blade cutting method using the dicing film of any one of (7) to (11). [Effects of the Invention]

本發明關於一種切割膜片，係包含基材層與於該基材層之一主面上設置之表面層的切割膜片用基材膜，該基材層含有低密度聚乙烯，該表面層含有離子聚合物樹脂，因此在切割步驟中可減少切削碎屑，且擴展性及復原性優異。The present invention relates to a dicing film comprising a substrate film and a substrate film for a dicing film provided on a main surface of one of the substrate layers, the substrate layer comprising a low density polyethylene, the surface layer Since the ionic polymer resin is contained, cutting debris can be reduced in the cutting step, and the expandability and the recovery property are excellent.

以下對本發明之切割膜片進行詳細地說明。 首先，對基板之製造方法中所使用之本發明之切割膜片100(以下有時亦簡稱為「黏接膠帶100」)進行說明。The dicing film of the present invention will be described in detail below. First, the dicing film 100 of the present invention (hereinafter sometimes simply referred to as "adhesive tape 100") used in the method of manufacturing a substrate will be described.

＜半導體基板加工用切割膜片＞ 圖3係表示本發明之半導體基板加工用切割膜片之實施方式的縱剖面圖。 此外，在以下的說明中圖3中的上側稱為「上」，下側稱為「下」。<The dicing film for semiconductor substrate processing> FIG. 3 is a longitudinal cross-sectional view showing an embodiment of the dicing film for semiconductor substrate processing of the present invention. In addition, in the following description, the upper side in FIG. 3 is called "upper", and the lower side is called "lower".

切割膜片100(本發明之切割膜片)，係由具備切割膜片用基材膜4(以下有時亦稱為基材4)、及於該切割膜片用基材膜4上疊層之黏接層2之疊層體構成者。 以下對切割膜片100所具有之切割膜片用基材膜4及黏接層2進行詳述。The dicing film 100 (the dicing film of the present invention) is provided with a base film 4 for dicing film (hereinafter sometimes referred to as a substrate 4) and a base film 4 for the dicing film. The laminate of the adhesive layer 2 is composed of a laminate. The base film 4 for the dicing film and the adhesive layer 2 which the dicing film 100 has are described in detail below.

此外，切割膜片100係具有藉由對其所具備之黏接層2施加能量，而導致黏接層2之對於半導體基板7之黏接性降低之功能者。 該等對黏接層2施加能量的方法，可列舉對黏接層2照射能量線的方法、及加熱黏接層2的方法等，其中，考慮半導體晶片20無須經歷不必要之熱歷程的觀點，適合使用對黏接層2照射能量線的方法。因此，以下就黏接層2而言，以藉由能量線的照射而導致該黏接性降低者作為代表進行說明。Further, the dicing film 100 has a function of reducing the adhesion of the adhesive layer 2 to the semiconductor substrate 7 by applying energy to the adhesive layer 2 provided thereto. The method of applying energy to the adhesive layer 2 includes a method of irradiating the adhesive layer 2 with an energy ray, a method of heating the adhesive layer 2, and the like, wherein a viewpoint that the semiconductor wafer 20 does not have to undergo an unnecessary thermal history is considered. It is suitable to use a method of irradiating the adhesive layer 2 with an energy ray. Therefore, the adhesive layer 2 will be described below as a representative of the adhesive layer by the irradiation of the energy ray.

＜基材4＞ 基材4主要由樹脂材料組成，並具有支撐於該基材4上所設置之黏接層2的功能。基材4的厚度並無特別限制，例如，為10μm以上300μm以下較佳，30μm以上200μm以下更佳，80μm以上200μm以下尤佳。基材4的厚度為該範圍內時，能以優異的加工性進行半導體基板7的切割。<Substrate 4> The substrate 4 is mainly composed of a resin material and has a function of supporting the adhesive layer 2 provided on the substrate 4. The thickness of the substrate 4 is not particularly limited, and is preferably 10 μm or more and 300 μm or less, more preferably 30 μm or more and 200 μm or less, and particularly preferably 80 μm or more and 200 μm or less. When the thickness of the base material 4 is within this range, the semiconductor substrate 7 can be cut with excellent workability.

本發明中，基材4具有表面層與基材層之2層以上的層。因此切割時的切削碎屑的產生的抑制效果提升。 以下對基材4之表面層42與基材層41依次進行說明。In the present invention, the substrate 4 has two or more layers of a surface layer and a base material layer. Therefore, the suppression effect of the generation of cutting debris at the time of cutting is improved. Hereinafter, the surface layer 42 of the substrate 4 and the base material layer 41 will be sequentially described.

＜表面層＞ 構成本發明之切割膜片用基材膜4之表面層42，在一個或多個實施形態中，為藉由切割刀片切入之切入層。表面層42含有離子聚合物樹脂。藉此，可使切割刀片僅切入表面層42，而顯著減少切削碎屑，同時在擴展裝置中呈放射狀擴展時，擴展性變得良好。 亦即，切割步驟中切削半導體基板等時，切割刀片與切割膜片之間產生摩擦熱。因此，與切割刀片的接觸部分暴露在高溫下，基材變成熔融狀態。因此，熔融的樹脂附著(cling)在刀片表面而引起阻塞並阻礙正常的切割，且熔融變軟的基材因切割刀片的旋轉而被拉伸伸長，而成為切割步驟中基材鬚產生的原因之一。<Surface Layer> The surface layer 42 constituting the base film 4 for a dicing film of the present invention is a cut-in layer cut by a dicing blade in one or more embodiments. The surface layer 42 contains an ionic polymer resin. Thereby, the cutting blade can be cut only into the surface layer 42 to significantly reduce the cutting debris, and the spreadability becomes good when it expands radially in the expansion device. That is, when the semiconductor substrate or the like is cut in the cutting step, frictional heat is generated between the dicing blade and the dicing film. Therefore, the contact portion with the cutting blade is exposed to a high temperature, and the substrate becomes molten. Therefore, the molten resin cling on the surface of the blade to cause clogging and hinder the normal cutting, and the melt-softened substrate is stretched and elongated by the rotation of the cutting blade, which is a cause of the substrate to be produced in the cutting step. one.

由於係藉由切割刀片切入之切入層之表面層42含有離子聚合物樹脂，表面層42的熔融黏度變高，因此切割時，即使在產生摩擦熱的狀況下，樹脂不亦會附著在刀片上，可顯著減少切削碎屑。 又，由於係藉由切割刀片切入之切入層之表面層42含有離子聚合物樹脂，表面層42常溫下變得相對柔軟，在擴展裝置中呈放射狀擴展時的擴展性變得良好故較佳。Since the surface layer 42 of the cut-in layer cut by the cutting blade contains the ionic polymer resin, the melt viscosity of the surface layer 42 becomes high, so that the resin does not adhere to the blade even when frictional heat is generated during the cutting. Can significantly reduce cutting debris. Further, since the surface layer 42 of the cut-in layer cut by the dicing blade contains the ionic polymer resin, the surface layer 42 becomes relatively soft at normal temperature, and the expandability at the time of radial expansion in the expansion device becomes good, so that it is preferable. .

上述離子聚合物樹脂，係利用金屬離子將以乙烯及(甲基)丙烯酸作為聚合物之結構成分之二元共聚物、或以乙烯、(甲基)丙烯酸及(甲基)丙烯酸酯作為聚合物之結構成分之三元共聚物進行交聯而得者。該金屬離子，可列舉鉀離子(K+)、鈉離子(Na+)、鋰離子(Li+)、鎂離子(Mg++)、鋅離子(Zn++)等。The above ionic polymer resin is a binary copolymer using ethylene and (meth)acrylic acid as a structural component of a polymer, or ethylene, (meth)acrylic acid and (meth)acrylic acid ester as a polymer by using a metal ion. The terpolymer of the structural component is obtained by crosslinking. Examples of the metal ion include potassium ion (K+), sodium ion (Na+), lithium ion (Li+), magnesium ion (Mg++), and zinc ion (Zn++).

就上述金屬離子而言，鋅離子(Zn++)可使交聯結構穩定，因此在不易產生切割碎屑的方面為較佳，又，耐水性高，表面層42不會因切割時的切削水而膨脹故為較佳。In the case of the above metal ions, zinc ions (Zn++) can stabilize the crosslinked structure, and therefore are preferable in that it is less likely to cause cutting debris, and the water resistance is high, and the surface layer 42 is not caused by the cutting water during cutting. Expansion is preferred.

上述以乙烯及(甲基)丙烯酸作為聚合物之結構成分之二元共聚物、或以乙烯、(甲基)丙烯酸及(甲基)丙烯酸酯作為聚合物之結構成分之三元共聚物之羧基之由於陽離子的中和度，為40～75mol%較佳。該離子聚合物樹脂可使用藉由合成而獲得的物質，亦可使用市售品。The above-mentioned binary copolymer of ethylene and (meth)acrylic acid as a structural component of a polymer, or a carboxyl group of a terpolymer of ethylene, (meth)acrylic acid and (meth)acrylic acid ester as a structural component of a polymer The degree of neutralization of the cation is preferably from 40 to 75 mol%. As the ionic polymer resin, those obtained by synthesis can be used, and a commercially available product can also be used.

上述離子聚合物樹脂為利用金屬離子將以乙烯、(甲基)丙烯酸及(甲基)丙烯酸烷基酯作為聚合物之結構成分之三元共聚物進行交聯而得之樹脂較佳。亦即，藉由含有(甲基)丙烯酸烷基酯作為聚合物之結構成分，可獲得適度的柔軟性及加工性的效果。The ionic polymer resin is preferably a resin obtained by crosslinking a terpolymer of ethylene, (meth)acrylic acid and alkyl (meth)acrylate as a structural component of a polymer with a metal ion. That is, by containing an alkyl (meth)acrylate as a structural component of the polymer, an effect of moderate flexibility and workability can be obtained.

上述離子聚合物樹脂的熔點為80℃以上較佳。藉此提高了表面層42的耐熱性故為較佳。該離子聚合物樹脂的熔點的上限值並無特別限制，但實質上為100℃左右。The melting point of the above ionic polymer resin is preferably 80 ° C or higher. Thereby, the heat resistance of the surface layer 42 is improved, which is preferable. The upper limit of the melting point of the ionic polymer resin is not particularly limited, but is substantially about 100 °C.

上述離子聚合物樹脂之基於JIS K 7210「熱塑性塑膠之流量試驗方法」所示之試驗方法之於試驗溫度190℃、試驗荷重21.18N條件下的MFR為3g/10min以下較佳。藉此可抑制切割膜片100之切削碎屑的產生。該離子聚合物樹脂之MFR之下限值並無特別限制，但實質上為0.8g/10min。The ionic polymer resin is preferably a test method shown in JIS K 7210 "Method for Flow Rate of Thermoplastic Plastics" at a test temperature of 190 ° C and a test load of 21.18 N, preferably Mg of 3 g/10 min or less. Thereby, the generation of cutting chips of the dicing film 100 can be suppressed. The lower limit of the MFR of the ionic polymer resin is not particularly limited, but is substantially 0.8 g/10 min.

表面層42之離子聚合物樹脂之含有率為60%以上100%以下較佳。為60%以上時抑制切割碎屑的效果較佳。The content of the ionic polymer resin of the surface layer 42 is preferably 60% or more and 100% or less. The effect of suppressing cutting debris when it is 60% or more is preferable.

表面層42亦可含有其他樹脂材料。 該等樹脂材料並無特別限制，例如，可使用如低密度聚乙烯、直鏈聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯之類之聚乙烯；如無規共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯之聚丙烯；聚氯乙烯、聚丁烯、聚丁二烯、聚甲基戊烯等聚烯烴系樹脂；乙烯－乙酸乙烯酯共聚物、乙烯－(甲基)丙烯酸共聚物、乙烯－(甲基)丙烯酸酯(無規、交替)共聚物、乙烯－丙烯共聚物、乙烯－丁烯共聚物、乙烯－己烯共聚物等烯烴系共聚物；聚對苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚對苯二甲酸丁二醇酯、聚萘二甲酸丁二醇酯等聚酯系樹脂；聚胺酯、聚醯亞胺、聚醯胺、如聚二醚酮之聚醚酮、聚醚碸、聚苯乙烯、氟樹脂、矽氧樹脂、纖維素樹脂、苯乙烯系熱塑性彈性體、如聚丙烯系熱塑性彈性體之烯烴系熱塑性彈性體、丙烯酸樹脂、聚酯系熱塑性彈性體、聚乙烯異戊二烯、聚碳酸酯等熱塑性樹脂；該等熱塑性樹脂的混合物。The surface layer 42 may also contain other resin materials. The resin materials are not particularly limited, and for example, polyethylene such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, such as random copolymerization can be used. Propylene, block copolymer polypropylene, polypropylene of homopolypropylene; polyolefin resin such as polyvinyl chloride, polybutene, polybutadiene, polymethylpentene; ethylene-vinyl acetate copolymer, ethylene- An olefin-based copolymer such as a (meth)acrylic copolymer, an ethylene-(meth)acrylate (random, alternating) copolymer, an ethylene-propylene copolymer, an ethylene-butene copolymer, or an ethylene-hexene copolymer; Polyester resins such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, and polybutylene naphthalate; polyurethane, polyimine, Polyamide, polyether ketone such as polydiether ketone, polyether oxime, polystyrene, fluororesin, oxime resin, cellulose resin, styrene thermoplastic elastomer, olefin system such as polypropylene thermoplastic elastomer Thermoplastic elastomer, acrylic resin, polyester thermoplastic Of body, isoprene, polyethylene, polycarbonate and other thermoplastic resin; a thermoplastic resin mixture of these.

表面層42，在不損害發明之主旨的範圍內，亦可含有抗氧化劑等添加劑、填料等。The surface layer 42 may contain an additive such as an antioxidant, a filler, or the like, within a range not impairing the gist of the invention.

表面層42的厚度，以減少切削碎屑的觀點觀之，宜比藉由切割刀片向表面層切入的深度(以下亦稱為切入量)厚較佳。表面層的厚度為10～140μm，較佳為20～120μm。又，表面層的厚度相對於切割膜片用基材膜的厚度為10～90%，較佳為20～80%。The thickness of the surface layer 42 is preferably smaller than the depth (hereinafter also referred to as the amount of cut) which is cut into the surface layer by the dicing blade from the viewpoint of reducing cutting debris. The thickness of the surface layer is from 10 to 140 μm, preferably from 20 to 120 μm. Further, the thickness of the surface layer is from 10 to 90%, preferably from 20 to 80%, based on the thickness of the base film for dicing the film.

表面層42亦可為由將不同的上述樹脂材料所構成的層進行多層疊層而成的疊層體(多層體)所構成者。The surface layer 42 may be a laminate (multilayer body) in which a layer composed of different resin materials is laminated in a plurality of layers.

＜基材層＞ 對構成本發明之切割膜片用基材膜4之基材層41進行說明。 基材層41含有低密度聚乙烯。藉此在擴展裝置中呈放射狀擴展時，擴展性變得良好。 又，低密度聚乙烯熔點比上述離子聚合物樹脂高，且耐熱性高，因此切割時不會因摩擦熱而熔融，且切割時不會黏在卡盤工作台上故較佳。<Base Layer> The base layer 41 constituting the base film 4 for a dicing film of the present invention will be described. The base material layer 41 contains low density polyethylene. Thereby, when the expansion device is radially expanded, the expandability becomes good. Further, since the low-density polyethylene has a higher melting point than the above-mentioned ionic polymer resin and has high heat resistance, it is not melted by frictional heat during dicing, and is preferably not adhered to the chuck table during dicing.

上述低密度聚乙烯係指密度為0.880g/cm3 以上未達0.940g/cm3 之聚乙烯。該低密度聚乙烯的密度為0.910g/cm3 以上0.930g/cm3 以下特佳。該低密度聚乙烯定義為：將乙烯單體藉由高壓法聚合而獲得之具有長鏈分支化(分支鏈的長度並無特別限制)者、被稱為所謂的「低密度聚乙烯」或「超低密度聚乙烯」者、及將乙烯與碳原子數3～8之α－烯烴單體藉由低壓法聚合而獲得之被稱為「直鏈低密度聚乙烯」(此時短鏈分支的長度為碳原子數1～6)者、進一步包含於上述密度範圍內之「乙烯－α－烯烴共聚物彈性體」的總稱。此外，低密度聚乙烯的密度可根據JISK 7112進行測定。The above low-density polyethylene means a polyethylene having a density of 0.880 g/cm 3 or more and less than 0.940 g/cm 3 . The low-density polyethylene having a density of 0.910g / cm 3 or more 0.930g / cm 3 or less particularly preferred. The low-density polyethylene is defined as a long-chain branching obtained by polymerizing an ethylene monomer by a high-pressure method (the length of the branching chain is not particularly limited), and is called a so-called "low-density polyethylene" or " Ultra-low-density polyethylene, which is obtained by low-pressure polymerization of ethylene and an α-olefin monomer having 3 to 8 carbon atoms, is called "linear low-density polyethylene" (the length of the short-chain branch at this time) The total name of the "ethylene-α-olefin copolymer elastomer" which is further included in the above density range is a carbon number of 1 to 6). Further, the density of the low density polyethylene can be measured in accordance with JIS K 7112.

上述低密度聚乙烯的熔點為90℃以上140℃以下較佳。為100℃以上時耐熱性的效果較佳。又，為140℃以下時常溫下的剛性變低，擴展性優異的效果較佳。The low-density polyethylene preferably has a melting point of 90 ° C or more and 140 ° C or less. The effect of heat resistance at 100 ° C or higher is preferred. Further, when the temperature is 140 ° C or lower, the rigidity at normal temperature is lowered, and the effect of excellent expandability is preferable.

基材層41之低密度聚乙烯的含有率為40%以上100%以下較佳。為40%以上時，與上述表面層的黏著性、成本方面的效果較佳。The content of the low-density polyethylene of the base material layer 41 is preferably 40% or more and 100% or less. When it is 40% or more, the effect on the adhesion to the surface layer and the cost are preferable.

此處，上述表面層42所含有之離子聚合物樹脂，係利用金屬離子將以乙烯及(甲基)丙烯酸作為聚合物之結構成分之二元共聚物、或以乙烯、(甲基)丙烯酸及(甲基)丙烯酸酯作為聚合物之結構成分之三元共聚物進行交聯而得之樹脂，且含有乙烯作為單體成分。 又，上述基材層41所含有之低密度聚乙烯，其單體成分為乙烯。 表面層42、基材層41同時含有乙烯作為單體成分，因此在切割膜片用基材膜4中，藉由表面層42與基材層41之間的分子間相互作用的效果，可抑制表面層42與基材層41之間的層間剝離。Here, the ionic polymer resin contained in the surface layer 42 is a binary copolymer using ethylene and (meth)acrylic acid as a structural component of a polymer, or ethylene, (meth)acrylic acid, and A resin obtained by crosslinking a (meth) acrylate as a terpolymer of a structural component of a polymer, and containing ethylene as a monomer component. Further, the low-density polyethylene contained in the base material layer 41 has a monomer component of ethylene. Since the surface layer 42 and the base material layer 41 contain ethylene as a monomer component, the effect of the intermolecular interaction between the surface layer 42 and the base material layer 41 can be suppressed in the base film 4 for dicing the film. The interlayer between the surface layer 42 and the substrate layer 41 is peeled off.

基材層41亦可含有其他樹脂材料。 該等樹脂材料並無特別限制，例如，可使用如直鏈聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯之類之聚乙烯；如無規共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯之聚丙烯；聚氯乙烯、聚丁烯、聚丁二烯、聚甲基戊烯等聚烯烴系樹脂；乙烯－乙酸乙烯酯共聚物；如鋅離子交聯體、鈉離子交聯體之離子聚合物；乙烯－(甲基)丙烯酸共聚物、乙烯－(甲基)丙烯酸酯(無規、交替)共聚物、乙烯－丙烯共聚物、乙烯－丁烯共聚物、乙烯－己烯共聚物等烯烴系共聚物；聚對苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚對苯二甲酸丁二醇酯、聚萘二甲酸丁二醇酯等聚酯系樹脂；聚胺酯、聚醯亞胺、聚醯胺、如聚二醚酮之聚醚酮、聚醚碸、聚苯乙烯、氟樹脂、矽氧樹脂、纖維素樹脂、苯乙烯系熱塑性彈性體、如聚丙烯系熱塑性彈性體之烯烴系熱塑性彈性體、丙烯酸樹脂、聚酯系熱塑性彈性體、聚乙烯異戊二烯、聚碳酸酯等熱塑性樹脂；該等熱塑性樹脂的混合物。The base material layer 41 may also contain other resin materials. The resin materials are not particularly limited. For example, polyethylene such as linear polyethylene, medium density polyethylene, high density polyethylene, and ultra low density polyethylene can be used; for example, random copolymer polypropylene, block copolymerization Polypropylene, homopolypropylene polypropylene; polyolefin resin such as polyvinyl chloride, polybutene, polybutadiene, polymethylpentene; ethylene-vinyl acetate copolymer; such as zinc ion crosslinked body, Ionic polymer of sodium ion crosslinked body; ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymer, ethylene-propylene copolymer, ethylene-butene copolymer, An olefin-based copolymer such as an ethylene-hexene copolymer; polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polybutylene naphthalate, etc. Polyester resin; polyurethane, polyimide, polyamine, polyether ketone such as polydiether ketone, polyether oxime, polystyrene, fluororesin, oxime resin, cellulose resin, styrene thermoplastic elasticity Olefin thermoplastic elastomer such as polypropylene thermoplastic elastomer , An acrylic resin, a polyester based thermoplastic elastomer, isoprene, polyethylene, polycarbonate and other thermoplastic resin; a thermoplastic resin mixture of these.

基材層41，在不損害發明之主旨的範圍內，亦可含有抗氧化劑等添加劑、填料等。The base material layer 41 may contain an additive such as an antioxidant, a filler, or the like, within a range not impairing the gist of the invention.

基材層41的厚度，在一個或多個實施形態中，以能確保在擴展步驟中拉伸膜片時膜片不破裂程度的強度的觀點觀之，為40～95μm或60～80μm。又，基材層41的厚度相對於切割膜片用基材膜的厚度為40～95%或60～80%。In the one or more embodiments, the thickness of the base material layer 41 is 40 to 95 μm or 60 to 80 μm from the viewpoint of ensuring the strength of the film when the film is stretched in the expansion step. Further, the thickness of the base material layer 41 is 40 to 95% or 60 to 80% with respect to the thickness of the base film for dicing the film.

基材層41亦可為由將不同的上述樹脂材料所構成的層進行多疊層層而成的疊層體(多層體)所構成者。The base material layer 41 may be formed of a laminate (multilayer body) in which a layer composed of different resin materials is laminated.

基材層41含有抗靜電劑較佳。藉此，在膠帶貼合步驟、切割步驟及拾取步驟中，可確切地抑制或防止半導體元件中靜電的產生。 該抗靜電劑並無特別限制，例如，可列舉表面活性劑、永久抗靜電高分子(IDP)、金屬材料、金屬氧化物材料及碳系材料等，可使用該等中之1種或2種以上倂用。 該等中就表面活性劑而言，例如，可列舉陰離子表面活性劑、陽離子表面活性劑、非離子表面活性劑、兩性離子表面活性劑等。 就永久抗靜電高分子(IDP)而言，例如，可使用聚酯醯胺系列、聚酯醯胺、聚醚酯醯胺、聚胺酯系列等全部的IDP。 又，就金屬材料而言，可列舉金、銀、銅或覆銀之銅(Silver-coated copper)、鎳等，使用該等的金屬粉較佳。 金屬氧化物材料，可列舉氧化銦錫(ITO)、氧化銦(IO)、氧化銻錫(ATO)、氧化銦鋅(IZO)、氧化錫(SnO2)等，使用該等的金屬氧化物粉較佳。 進一步，就碳系材料而言，可列舉碳黑、如單層奈米碳管、多層奈米碳管之奈米碳管、奈米碳纖維、CN奈米管、CN奈米纖維、BCN奈米管、BCN奈米纖維、石墨烯等。 其中，為表面活性劑、永久抗靜電高分子(IDP)、金屬氧化物材料及碳黑中之至少1種較佳。由於該等物質係電阻率的溫度依存性小者，在切割時即使加熱基材4，亦可減少基材層41的表面電阻值的變化。The base material layer 41 preferably contains an antistatic agent. Thereby, in the tape bonding step, the cutting step, and the pickup step, generation of static electricity in the semiconductor element can be suppressed or prevented. The antistatic agent is not particularly limited, and examples thereof include a surfactant, a permanent antistatic polymer (IDP), a metal material, a metal oxide material, and a carbon-based material. One or two of these may be used. The above is applicable. Examples of the surfactant in the above include an anionic surfactant, a cationic surfactant, a nonionic surfactant, a zwitterionic surfactant, and the like. As the permanent antistatic polymer (IDP), for example, all IDPs such as polyester phthalamide series, polyester decylamine, polyether ester decylamine, and polyurethane series can be used. Further, the metal material may, for example, be gold, silver, copper or silver-coated copper, nickel or the like, and it is preferred to use these metal powders. Examples of the metal oxide material include indium tin oxide (ITO), indium oxide (10), antimony tin oxide (ATO), indium zinc oxide (IZO), and tin oxide (SnO 2 ), and the like is used. good. Further, as the carbon-based material, carbon black, such as a single-layer carbon nanotube, a multi-layered carbon nanotube nano carbon tube, a nano carbon fiber, a CN nano tube, a CN nano fiber, a BCN nanometer can be cited. Tube, BCN nanofiber, graphene, etc. Among them, at least one of a surfactant, a permanent antistatic polymer (IDP), a metal oxide material, and carbon black is preferred. Since the temperature dependence of the resistivity of these materials is small, even if the substrate 4 is heated during dicing, the change in the surface resistance value of the base material layer 41 can be reduced.

基材層41之抗靜電劑的含有率為5%以上40%以下較佳。為5%以上時可充分顯現抗靜電性能故較佳。又，為40%以下時在成本的方面較佳。The content of the antistatic agent of the base material layer 41 is preferably 5% or more and 40% or less. When it is 5% or more, the antistatic property is sufficiently exhibited, so that it is preferable. Moreover, when it is 40% or less, it is preferable in terms of cost.

本發明之切割膜片用基材膜之全體的厚度，在一個或多個實施形態中為50～200μm，較佳為80～150μm。切割膜片用基材膜的厚度可因應切割之目的物之種類而適宜設定。切割膜片用基材膜之全體的厚度為50μm以上時，可保護基板免受切割時的衝擊。The thickness of the entire base film for a dicing film of the present invention is 50 to 200 μm, preferably 80 to 150 μm, in one or more embodiments. The thickness of the base film for cutting the film can be appropriately set depending on the type of the object to be cut. When the thickness of the entire base film for a dicing film is 50 μm or more, the substrate can be protected from the impact at the time of dicing.

＜黏接層＞ 黏接層2，於切割半導體基板7時，具有黏接並支撐半導體基板7的功能。又，該黏接層2，係藉由對其施加能量而降低其對於半導體基板7的黏接性，藉此成為在黏接層2與半導體基板7之間可輕易產生剝離的狀態者。<Adhesive Layer> The adhesive layer 2 has a function of bonding and supporting the semiconductor substrate 7 when the semiconductor substrate 7 is cut. Moreover, the adhesive layer 2 is in a state in which peeling is easily caused between the adhesive layer 2 and the semiconductor substrate 7 by applying energy thereto to lower the adhesion to the semiconductor substrate 7.

具備該等功能之黏接層2，由含有(1)具有黏接性之基礎樹脂、及(2)使黏接層2硬化之硬化性樹脂作為主要材料之樹脂組成物構成。 以下，對樹脂組成物所含有之各成分依次進行詳述。The adhesive layer 2 having such functions is composed of a resin composition containing (1) a base resin having adhesiveness and (2) a curable resin which cures the adhesive layer 2 as a main material. Hereinafter, each component contained in the resin composition will be described in detail in order.

(1)基礎樹脂 基礎樹脂具有黏接性，係為了向黏接層2照射能量線前賦予黏接層2對於半導體基板7的黏接性，而含於樹脂組成物中。(1) Base resin The base resin has adhesiveness and is contained in the resin composition in order to impart adhesiveness to the semiconductor substrate 7 of the adhesive layer 2 before the energy ray is applied to the adhesive layer 2.

該等基礎樹脂，可列舉如丙烯酸系樹脂(黏接劑)、矽氧系樹脂(黏接劑)、聚酯系樹脂(黏接劑)、聚乙酸乙烯酯系樹脂(黏接劑)、聚乙烯基醚系樹脂(黏接劑)或胺甲酸乙酯系樹脂(黏接劑)之可作為黏接層成分而使用之公知的物質，其中，使用丙烯酸系樹脂較佳。丙烯酸系樹脂，耐熱性優異，又，可相對容易且廉價地取得，因此作為基礎樹脂而使用較佳。Examples of the base resin include an acrylic resin (adhesive), a silicone resin (adhesive), a polyester resin (adhesive), a polyvinyl acetate resin (adhesive), and a poly A vinyl ether-based resin (adhesive) or an urethane-based resin (adhesive) can be used as a component of the adhesive layer. Among them, an acrylic resin is preferably used. The acrylic resin is excellent in heat resistance and can be obtained relatively easily and inexpensively. Therefore, it is preferably used as a base resin.

丙烯酸系樹脂，係指將以(甲基)丙烯酸酯作為單體主要成分之聚合物(均聚物或共聚物)作為基底聚合物者。The acrylic resin refers to a polymer (homopolymer or copolymer) having a (meth) acrylate as a main component of a monomer as a base polymer.

(甲基)丙烯酸酯並無特別限制，例如，可列舉如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸二級丁酯、(甲基)丙烯酸三級丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸2－乙基己酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸十一烷酯、(甲基)丙烯酸十二烷酯、(甲基)丙烯酸十三烷酯、(甲基)丙烯酸十四烷酯、(甲基)丙烯酸十五烷酯、(甲基)丙烯酸十六烷酯、(甲基)丙烯酸十七烷酯、(甲基)丙烯酸十八烷酯之(甲基)丙烯酸烷基酯；如(甲基)丙烯酸環己酯之(甲基)丙烯酸環烷基酯；如(甲基)丙烯酸苯酯之(甲基)丙烯酸芳基酯等，可使用該等中之1種或2種以上倂用。其中，如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2－乙基己酯、(甲基)丙烯酸辛酯之(甲基)丙烯酸烷基酯較佳。(甲基)丙烯酸烷基酯，特別是耐熱性優異，又，可相對輕易且廉價地取得。The (meth) acrylate is not particularly limited, and examples thereof include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, and isopropyl (meth) acrylate. Butyl methacrylate, isobutyl (meth)acrylate, secondary butyl (meth)acrylate, tertiary butyl (meth)acrylate, amyl (meth)acrylate, (meth)acrylate Ester, heptyl (meth)acrylate, octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, decyl (meth)acrylate, (methyl) Isodecyl acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate, (meth) acrylate Alkyl ester, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, heptadecyl (meth)acrylate, 18 (meth)acrylate An alkyl (meth) acrylate of an alkyl ester; a cycloalkyl (meth) acrylate such as cyclohexyl (meth) acrylate; an aryl (meth) acrylate such as phenyl (meth) acrylate , can use 1 of these Merger with two or more kinds. Among them, such as methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, octyl (meth) acrylate (methyl An alkyl acrylate is preferred. The alkyl (meth)acrylate is particularly excellent in heat resistance and can be obtained relatively easily and inexpensively.

此外，本說明書中「(甲基)丙烯酸酯」，係包含丙烯酸酯與甲基丙烯酸酯之雙方的意思而使用。In the present specification, "(meth) acrylate" is used in the sense of both acrylate and methacrylate.

又，該丙烯酸系樹脂，其玻璃轉化溫度為20℃以下較佳。藉此，可在向黏接層2照射能量線前使黏接層2發揮優異的黏接性。Further, the acrylic resin preferably has a glass transition temperature of 20 ° C or lower. Thereby, the adhesive layer 2 can exhibit excellent adhesion before the energy ray is applied to the adhesive layer 2.

丙烯酸系樹脂，為了內聚力、耐熱性等的改善等的目的，必要時可使用含有共聚性單體者作為構成聚合物之單體成分。For the purpose of improving the cohesive force, heat resistance, and the like, the acrylic resin may be used as a monomer component constituting the polymer if necessary.

該等共聚性單體並無特別限制，例如，可列舉如(甲基)丙烯酸2－羥基乙酯、(甲基)丙烯酸2－羥基丙酯、(甲基)丙烯酸4－羥基丁酯、(甲基)丙烯酸6－羥基己酯之含有羥基之單體；如(甲基)丙烯酸縮水甘油酯之含有環氧基之單體；如(甲基)丙烯酸、衣康酸、馬來酸、富馬酸、巴豆酸、異巴豆酸之含有羧基之單體；如馬來酸酐、衣康酸酐之含有酸酐基之單體；如(甲基)丙烯醯胺、N,N－二甲基(甲基)丙烯醯胺、N－丁基(甲基)丙烯醯胺、N－羥甲基(甲基)丙烯醯胺、N－羥甲基丙烷(甲基)丙烯醯胺、N－甲氧基甲基(甲基)丙烯醯胺、N－丁氧基甲基(甲基)丙烯醯胺之醯胺系單體；如(甲基)丙烯酸胺基乙酯、(甲基)丙烯酸N,N－二甲基胺基乙酯、(甲基)丙烯酸三級丁基胺基乙酯之含有胺基之單體；如(甲基)丙烯腈之含有氰基之單體；如乙烯、丙烯、異戊二烯、丁二烯、異丁烯之烯烴系單體；如苯乙烯、α－甲基苯乙烯、乙烯甲苯之苯乙烯系單體；如乙酸乙烯酯、丙酸乙烯酯之乙烯酯系單體；如甲基乙烯基醚、乙基乙烯基醚之乙烯基醚系單體；如氯乙烯、偏二氯乙烯之含有鹵素原子之單體；如(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧基乙酯之含有烷氧基之單體；N－乙烯－2－吡咯啶酮、N－甲基乙烯吡咯啶酮、N－乙烯吡啶、N－乙烯哌啶酮、N－乙烯嘧啶、N－乙烯哌、N－乙烯吡、N－乙烯吡咯、N－乙烯咪唑、N－乙烯噁唑、N－乙烯啉、N－乙烯己內醯胺、N－(甲基)丙烯醯基啉等具有含氮環之單體等，可使用該等中之1種或2種以上倂用。The copolymerizable monomer is not particularly limited, and examples thereof include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate. a hydroxyl group-containing monomer of 6-hydroxyhexyl methacrylate; an epoxy group-containing monomer such as glycidyl (meth)acrylate; such as (meth)acrylic acid, itaconic acid, maleic acid, and rich a carboxyl group-containing monomer of horse acid, crotonic acid or isocrotonic acid; an acid anhydride group-containing monomer such as maleic anhydride or itaconic anhydride; such as (meth) acrylamide, N, N-dimethyl (A) Base acrylamide, N-butyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methylolpropane (meth) acrylamide, N-methoxy A phthalamide-based monomer of methyl (meth) acrylamide or N-butoxymethyl (meth) acrylamide; such as aminoethyl (meth) acrylate or N, N (meth) acrylate - an amine group-containing monomer such as dimethylaminoethyl ester or (meth)acrylic acid tertiary butylaminoethyl; a cyano group-containing monomer such as (meth)acrylonitrile; such as ethylene, propylene, Isoprene, butadiene, isobutylene An olefin-based monomer; a styrene monomer such as styrene, α-methylstyrene, or ethylene toluene; a vinyl ester monomer such as vinyl acetate or vinyl propionate; such as methyl vinyl ether or ethyl a vinyl ether monomer of vinyl ether; a halogen atom-containing monomer such as vinyl chloride or vinylidene chloride; such as methoxyethyl (meth)acrylate or ethoxyethyl (meth)acrylate Alkoxy-containing monomer; N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpipe N-vinylpyrene , N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-ethylene Porphyrin, N-ethylene caprolactam, N-(methyl) propylene sulfhydryl A monomer having a nitrogen-containing ring or the like may be used, and one or more of these may be used.

該等共聚性單體之含量，相對於構成丙烯酸系樹脂之全部單體成分為40重量%以下較佳，10重量%以下更佳。The content of the copolymerizable monomer is preferably 40% by weight or less, and more preferably 10% by weight or less, based on the total monomer components constituting the acrylic resin.

又，共聚性單體可為於構成丙烯酸系樹脂之聚合物中之主鏈的末端所含有的單體，亦可為於其主鏈中所含有的單體，進一步亦可為於主鏈的末端與主鏈中之雙方所含有的單體。Further, the copolymerizable monomer may be a monomer contained in the terminal of the main chain in the polymer constituting the acrylic resin, a monomer contained in the main chain, or a main chain. The monomer contained in both the end and the main chain.

進一步，共聚性單體，為了聚合物彼此的交聯等的目的，亦可含有多官能性單體。Further, the copolymerizable monomer may contain a polyfunctional monomer for the purpose of crosslinking the polymers and the like.

多官能性單體，例如，可列舉(甲基)丙烯酸1,6－己二醇酯、二(甲基)丙烯酸(聚)乙二醇酯、二(甲基)丙烯酸(聚)丙二醇酯、二(甲基)丙烯酸新戊二醇酯、二(甲基)丙烯酸新戊四醇酯、三(甲基)丙烯酸三羥甲基丙烷酯、三(甲基)丙烯酸新戊四醇酯、六(甲基)丙烯酸二新戊四醇酯、二(甲基)丙烯酸甘油酯、(甲基)丙烯酸環氧酯、聚酯(甲基)丙烯酸酯、胺甲酸乙酯(甲基)丙烯酸酯、二乙烯苯、二(甲基)丙烯酸丁酯、二(甲基)丙烯酸己酯等，可使用該等中之1種或2種以上倂用。Examples of the polyfunctional monomer include 1,6-hexanediol (meth)acrylate, (poly)ethylene glycol (meth)acrylate, and (poly)propylene glycol di(meth)acrylate. Neopentyl glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, trimethylolpropane tri(methyl)acrylate, neopentyl glycol tri(meth)acrylate, six Dipentaerythritol (meth)acrylate, glycerol di(meth)acrylate, epoxy (meth)acrylate, polyester (meth)acrylate, ethyl urethane (meth)acrylate, As the divinylbenzene, butyl (meth)acrylate, hexyl (meth)acrylate, or the like, one type or two or more types of these may be used.

又，乙烯－乙酸乙烯酯共聚物及乙酸乙烯酯聚合物等亦可作為共聚性單體成分而使用。Further, an ethylene-vinyl acetate copolymer, a vinyl acetate polymer or the like may be used as a copolymerizable monomer component.

此外，該等丙烯酸系樹脂(聚合物)，可藉由將單一的單體成分或2種以上之單體成分的混合物聚合而製成。又，該等單體成分的聚合，例如，可使用溶液聚合法、乳液聚合法、塊狀聚合法、懸浮聚合法等聚合方法而進行。Further, these acrylic resins (polymers) can be produced by polymerizing a single monomer component or a mixture of two or more monomer components. Further, the polymerization of the monomer components can be carried out, for example, by a polymerization method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method or a suspension polymerization method.

以上所述之藉由將單體成分聚合而獲得之丙烯酸系樹脂，為於側鏈、主鏈中或主鏈的末端具有碳－碳雙鍵之丙烯酸系樹脂(有時亦稱為「雙鍵導入型丙烯酸系樹脂」。)較佳。丙烯酸系樹脂為雙鍵導入型丙烯酸系樹脂時，即使省略後述硬化性樹脂的添加，亦可使所得到之黏接層2發揮上述作為黏接層2的功能。The acrylic resin obtained by polymerizing a monomer component as described above is an acrylic resin having a carbon-carbon double bond in a side chain, a main chain, or a terminal of a main chain (sometimes referred to as a "double bond" The introduction type acrylic resin ".) is preferred. When the acrylic resin is a double bond-introducing acrylic resin, the obtained adhesive layer 2 can function as the adhesive layer 2 described above even if the addition of the curable resin to be described later is omitted.

該等雙鍵導入型丙烯酸系樹脂，為在構成丙烯酸系樹脂之聚合物內的側鏈中，1/100以上的側鏈各自具有1個之碳－碳雙鍵之雙鍵導入型丙烯酸系樹脂(有時亦稱為「雙鍵側鏈導入型丙烯酸系樹脂」。)較佳。如該等般將碳－碳雙鍵導入丙烯酸系樹脂的側鏈中的話，以分子設計的觀點觀之亦為有利。此外，該雙鍵側鏈導入型丙烯酸系樹脂，亦可於主鏈中、主鏈的末端含有碳－碳雙鍵。The double bond-introducing acrylic resin is a double bond-introducing acrylic resin having one carbon-carbon double bond in a side chain of 1/100 or more in a side chain in a polymer constituting the acrylic resin. (Sometimes also referred to as "double bond side chain introduction type acrylic resin".) It is preferable. When the carbon-carbon double bond is introduced into the side chain of the acrylic resin as described above, it is also advantageous from the viewpoint of molecular design. Further, the double-bond side chain-introducing acrylic resin may contain a carbon-carbon double bond in the main chain and at the end of the main chain.

該等雙鍵導入型丙烯酸系樹脂的合成方法(亦即，於丙烯酸系樹脂中導入碳－碳雙鍵的方法)並無特別限制，例如，可列舉使用作為共聚性單體之具有官能基之單體進行共聚，合成具有官能基之丙烯酸系樹脂(有時亦稱為「含官能基之丙烯酸系樹脂」。)後，使具有可與含官能基之丙烯酸系樹脂中之官能基反應之官能基及碳－碳雙鍵之化合物(有時亦稱為「含碳－碳雙鍵之反應性化合物」。)，與含官能基之丙烯酸系樹脂，在維持碳－碳雙鍵的能量線硬化性(能量線聚合性)的狀態下，進行縮合反應或加成反應，藉此合成雙鍵導入型丙烯酸系樹脂的方法等。The method for synthesizing the double bond-introducing acrylic resin (that is, the method of introducing a carbon-carbon double bond into the acrylic resin) is not particularly limited, and examples thereof include a functional group as a copolymerizable monomer. The monomer is copolymerized to synthesize an acrylic resin having a functional group (sometimes referred to as a "functional group-containing acrylic resin"), and then having a function capable of reacting with a functional group in the functional group-containing acrylic resin a compound having a carbon-carbon double bond (sometimes referred to as a "reactive compound containing a carbon-carbon double bond"), and an energy-line hardening of a carbon-carbon double bond with a functional group-containing acrylic resin A method of synthesizing a double bond introduction type acrylic resin by performing a condensation reaction or an addition reaction in a state of energy (energy ray polymerizability).

此外，於丙烯酸系樹脂中將碳－碳雙鍵導入至全側鏈中之1/100以上之側鏈時的控制方法，例如，可列舉藉由適當調整係使含官能基之丙烯酸系樹脂進行縮合反應或加成反應之化合物之含碳－碳雙鍵之反應性化合物的含量而進行的方法等。In addition, in the method of controlling the introduction of a carbon-carbon double bond into the side chain of 1/100 or more of the entire side chain in the acrylic resin, for example, the functional group-containing acrylic resin may be subjected to an appropriate adjustment. A method of carrying out a condensation reaction or a content of a reactive compound containing a carbon-carbon double bond of a compound of the addition reaction.

又，使含官能基之丙烯酸系樹脂與含碳－碳雙鍵之反應性化合物進行縮合反應或加成反應時，可藉由使用觸媒而使該反應有效地進行。該等觸媒並無特別限制，使用如二月桂酸二丁基錫之錫系觸媒較佳。該錫系觸媒之含量並無特別限制，例如，相對於含官能基之丙烯酸系樹脂100重量份為0.05重量份以上1重量份以下較佳。Further, when the functional group-containing acrylic resin and the carbon-carbon double bond-containing reactive compound are subjected to a condensation reaction or an addition reaction, the reaction can be efficiently carried out by using a catalyst. The catalyst is not particularly limited, and a tin-based catalyst such as dibutyltin dilaurate is preferably used. The content of the tin-based catalyst is not particularly limited. For example, it is preferably 0.05 parts by weight or more and 1 part by weight or less based on 100 parts by weight of the functional group-containing acrylic resin.

又，含官能基之丙烯酸系樹脂中之官能基A及含碳－碳雙鍵之反應性化合物中之官能基B，例如，可列舉羧基、酸酐基、羥基、胺基、環氧基、異氰酸酯基、氮丙啶基等，進一步，含官能基之丙烯酸系樹脂中之官能基A與含碳－碳雙鍵之反應性化合物中之官能基B之組合，例如，可列舉羧酸基(羧基)與環氧基之組合、羧酸基與氮丙啶基之組合、羥基與異氰酸酯基之組合、羥基與羧基之組合等各種組合，其中，羥基與異氰酸酯基之組合為較佳。藉此，可輕易地進行該等官能基A、B彼此的反應追蹤。Further, examples of the functional group B in the functional group A and the carbon-carbon double bond-containing reactive compound in the functional group-containing acrylic resin include a carboxyl group, an acid anhydride group, a hydroxyl group, an amine group, an epoxy group, and an isocyanate. Further, a combination of a functional group A in a functional group-containing acrylic resin and a functional group B in a carbon-carbon double bond-containing reactive compound, for example, a carboxylic acid group (carboxyl group) The combination with an epoxy group, a combination of a carboxylic acid group and an aziridine group, a combination of a hydroxyl group and an isocyanate group, and a combination of a hydroxyl group and a carboxyl group, and a combination of a hydroxyl group and an isocyanate group is preferred. Thereby, the reaction tracking of the functional groups A and B can be easily performed.

進一步，該等官能基A、B之組合中，任一官能基均可成為含官能基之丙烯酸系樹脂之官能基A或含碳－碳雙鍵之反應性化合物之官能基B，但，例如，羥基與異氰酸酯基之組合的情況，羥基成為含官能基之丙烯酸系樹脂中之官能基A，異氰酸酯基成為含碳－碳雙鍵之反應性化合物中之官能基B較佳。Further, in the combination of the functional groups A and B, any functional group may be the functional group B of the functional group-containing acrylic resin or the functional group B of the carbon-carbon double bond-containing reactive compound, but for example, In the case of a combination of a hydroxyl group and an isocyanate group, the hydroxyl group is a functional group A in the functional group-containing acrylic resin, and the isocyanate group is preferably a functional group B in the reactive compound containing a carbon-carbon double bond.

此時，具有構成含官能基之丙烯酸系樹脂之官能基A之單體，例如，可列舉如丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、馬來酸、富馬酸、巴豆酸之具有羧基者；如馬來酸酐、衣康酸酐之具有酸酐基者；如(甲基)丙烯酸2－羥基乙酯、(甲基)丙烯酸2－羥基丙酯、(甲基)丙烯酸4－羥基丁酯、(甲基)丙烯酸6－羥基己酯、(甲基)丙烯酸8－羥基辛酯、(甲基)丙烯酸10－羥基癸酯、(甲基)丙烯酸12－羥基十二烷酯、(甲基)丙烯酸(4－羥基甲基環己基)甲酯、乙烯醇、烯丙醇、2－羥基乙基乙烯基醚、2－羥基丙基乙烯基醚、4－羥基丁基乙烯基醚、乙二醇單乙烯基醚、二甘醇單乙烯基醚、丙二醇單乙烯基醚、二丙二醇單乙烯基醚之具有羥基者；如(甲基)丙烯酸縮水甘油酯、烯丙基縮水甘油醚之具有環氧基者等。In this case, the monomer having the functional group A constituting the functional group-containing acrylic resin may, for example, be acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxy amyl acrylate, itaconic acid, maleic acid, or rich. A resin having a carboxyl group; for example, maleic anhydride or itaconic anhydride; such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, (methyl) ) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxy decyl (meth) acrylate, 12-hydroxy meth (meth) acrylate Dialkyl ester, (4-hydroxymethylcyclohexyl)methyl (meth)acrylate, vinyl alcohol, allyl alcohol, 2-hydroxyethyl vinyl ether, 2-hydroxypropyl vinyl ether, 4-hydroxybutyl a vinyl ether, ethylene glycol monovinyl ether, diethylene glycol monovinyl ether, propylene glycol monovinyl ether, dipropylene glycol monovinyl ether having a hydroxyl group; such as glycidyl (meth)acrylate, allylic A glycidyl ether having an epoxy group or the like.

又，就具有官能基B之含碳－碳雙鍵之反應性化合物而言，具有異氰酸酯基者，例如，可列舉異氰酸(甲基)丙烯醯酯、異氰酸(甲基)丙烯醯氧甲酯、異氰酸2－(甲基)丙烯醯氧乙酯、異氰酸2－(甲基)丙烯醯氧丙酯、異氰酸3－(甲基)丙烯醯氧丙酯、異氰酸4－(甲基)丙烯醯氧丁酯、異氰酸間－丙烯基－α,α－二甲基苄酯等，具有環氧基者可列舉(甲基)丙烯酸縮水甘油酯等。Further, in the case of a reactive compound having a carbon-carbon double bond having a functional group B, an isocyanate group may, for example, be methacryloyl isocyanate or (meth) propylene isocyanate. Oxymethyl ester, 2-(methyl) propylene oxirane ethyl isocyanate, 2-(methyl) propylene isopropoxide cyanide, 3-(methyl) propylene isopropoxide cyanide, different Examples of 4-(methyl)acrylic acid decyloxycyanate, isocyanato-propenyl-α,α-dimethylbenzyl ester and the like, and examples of the epoxy group include glycidyl (meth)acrylate.

丙烯酸系樹脂，以於切割半導體基板7時，防止半導體基板7等的污染的觀點觀之，為低分子量物質之含量少者較佳。此時，丙烯酸系樹脂之重量平均分子量設定為30萬～500萬較佳，設定為50萬～500萬更佳，設定為80萬～300萬尤佳。此外，丙烯酸系樹脂之重量平均分子量，根據單體成分的種類等，為未達50萬時，對於半導體基板7等的污染防止性降低，且將半導體晶片20剝離時會有膠殘留之虞。The acrylic resin is preferable in view of preventing contamination of the semiconductor substrate 7 or the like when the semiconductor substrate 7 is cut, and the content of the low molecular weight substance is small. In this case, the weight average molecular weight of the acrylic resin is preferably 300,000 to 5,000,000, more preferably 500,000 to 5,000,000, and particularly preferably 800,000 to 3,000,000. In addition, when the weight average molecular weight of the acrylic resin is less than 500,000, the contamination prevention property of the semiconductor substrate 7 or the like is lowered, and the rubber wafer remains when the semiconductor wafer 20 is peeled off.

此外，丙烯酸系樹脂含有如羥基、羧基(特別是羥基)之對於交聯劑、光聚合引發劑具有反應性之官能基(反應性官能基)較佳。藉此，交聯劑、光聚合引發劑連接至係聚合物成分之丙烯酸樹脂，因此可確切地抑制或防止交聯劑、光聚合引發劑從黏接層2漏出。其結果為，進行能量線照射時可確實地降低黏接層2之對於半導體基板7的黏接性。Further, the acrylic resin preferably contains a functional group (reactive functional group) reactive with a crosslinking agent or a photopolymerization initiator such as a hydroxyl group or a carboxyl group (particularly a hydroxyl group). Thereby, the crosslinking agent and the photopolymerization initiator are bonded to the acrylic resin which is a polymer component, so that the crosslinking agent and the photopolymerization initiator can be surely prevented from leaking out from the adhesive layer 2. As a result, the adhesion of the adhesive layer 2 to the semiconductor substrate 7 can be reliably reduced when the energy ray is irradiated.

(2)硬化性樹脂 硬化性樹脂，例如，為具備因能量線的照射而硬化之硬化性者。藉由該硬化，基礎樹脂被納入至硬化性樹脂的交聯結構中，其結果為黏接層2的黏接力降低。(2) Curable resin The curable resin is, for example, a curable resin that is cured by irradiation with an energy ray. By this hardening, the base resin is incorporated into the crosslinked structure of the curable resin, and as a result, the adhesive force of the adhesive layer 2 is lowered.

該等硬化性樹脂，例如，可使用於分子內具有至少2個以上之因紫外線、電子束等能量線的照射而可三維交聯之聚合性含碳－碳雙鍵基作為官能基的低分子量化合物。具體而言，例如，可列舉如三(甲基)丙烯酸三羥甲基丙烷酯、三(甲基)丙烯酸新戊四醇酯、四(甲基)丙烯酸新戊四醇酯、四(甲基)丙烯酸四羥甲基甲烷酯、二(甲基)丙烯酸四乙二醇酯、二(甲基)丙烯酸1,6－己二醇酯、二(甲基)丙烯酸新戊二醇酯、六(甲基)丙烯酸二新戊四醇酯、五(甲基)丙烯酸二新戊四醇單羥基酯、二(甲基)丙烯酸1,4－丁二醇酯、聚二(甲基)丙烯酸乙二醇酯、二(甲基)丙烯酸甘油酯之(甲基)丙烯酸與多元醇的酯化物；如酯丙烯酸酯低聚物、氰脲酸2－丙烯基－二－3－丁烯酯等具有含碳－碳雙鍵基之氰脲酸酯系化合物；如異氰脲酸參(2－丙烯醯氧乙基)酯、異氰脲酸參(2－甲基丙烯醯氧乙基)酯、異氰脲酸2－羥基乙基雙(2－丙烯醯氧乙基)酯、異氰脲酸雙(2－丙烯醯氧乙基) 2－[(5－丙烯醯氧己基)－氧]乙酯、異氰脲酸參(1,3－二丙烯醯氧基－2－丙基－氧羰基胺基－正己基)酯、異氰脲酸參(1－丙烯醯氧乙基－3－甲基丙烯醯氧基－2－丙基－氧羰基胺基－正己基)酯、異氰脲酸參(4－丙烯醯氧基－正丁基)酯之具有含碳－碳雙鍵基之異氰脲酸酯系化合物；市售的低聚酯丙烯酸酯；芳香族系、脂肪族系等的胺甲酸乙酯丙烯酸酯等，可使用該等中之1種或2種以上倂用。其中，含有官能基數為6官能以上之低聚物較佳，含有官能基數為15官能以上之低聚物更佳。藉此，可藉由能量線的照射而確實地使硬化性樹脂硬化。又，該等硬化性樹脂為胺甲酸乙酯丙烯酸酯較佳。藉此，可獲得由於適度的柔軟性而可抑制拾取時的破膠的效果。For example, the curable resin can be used as a functional group having at least two or more polymerizable carbon-carbon double bond groups capable of three-dimensionally crosslinking by irradiation with energy rays such as ultraviolet rays and electron beams. Compound. Specific examples thereof include trimethylolpropane tris(meth)acrylate, neopentyl glycol tri(meth)acrylate, neopentyl glycol tetra(meth)acrylate, and tetrakis(methyl). ) tetramethylolmethacrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, six ( Di-n-pentaerythritol methyl methacrylate, di-n-pentyl pentoxide monohydroxy ester, 1,4-butane bis (meth) acrylate, polyethylene di(meth) acrylate An ester of a (meth)acrylic acid and a polyhydric alcohol of an alcohol ester or a glycerol di(meth)acrylate; such as an ester acrylate oligomer, 2-propenyl-di-3-butenyl cyanurate, etc. a carbon-carbon double bond group cyanurate compound; such as isocyanuric acid ginseng (2-propenyl oxiranyl) ester, isocyanuric acid ginseng (2-methyl propylene oxy oxyethyl) ester, different 2-hydroxyethyl bis(2-propenyl oxyethyl) cyanurate, bis(2-propenyl oxiranyl) 2-[(5-propenyloxyhexyl)-oxy]ethyl isocyanurate , isocyanuric acid ginseng (1,3-dipropenyloxy-2-propyl- Carbonylamino-n-hexyl), isocyanuric acid (1-propenyloxyethyl-3-methylpropenyloxy-2-propyl-oxycarbonylamino-n-hexyl) ester, isocyanurate An isocyanurate compound having a carbon-carbon double bond group of acid ginseng (4-propenyloxy-n-butyl) ester; a commercially available oligomeric acrylate; an aromatic system, an aliphatic system, etc. The urethane acrylate or the like may be used alone or in combination of two or more. Among them, an oligomer having a functional group number of 6 or more functions is preferable, and an oligomer having a functional group number of 15 or more functional groups is more preferable. Thereby, the curable resin can be surely cured by the irradiation of the energy ray. Further, these curable resins are preferably urethane acrylate. Thereby, it is possible to obtain an effect of suppressing breakage at the time of picking up due to moderate flexibility.

此外，該胺甲酸乙酯丙烯酸酯並無特別限定，例如，可列舉將聚酯類或聚醚類等多元醇化合物、與多元異氰酸酯化合物(例如，2,4－甲苯二異氰酸酯、2,6－甲苯二異氰酸酯、1,3－苯二甲基二異氰酸酯、1,4－苯二甲基二異氰酸酯、二苯基甲烷4,4－二異氰酸酯等)反應而獲得末端異氰酸酯胺甲酸乙酯預聚物，使其與具有羥基之(甲基)丙烯酸酯(例如，(甲基)丙烯酸2－羥基乙酯、(甲基)丙烯酸2－羥基丙酯、聚(甲基)丙烯酸乙二醇酯等)進行反應而獲得的物質。Further, the urethane acrylate is not particularly limited, and examples thereof include a polyol compound such as a polyester or a polyether, and a polyvalent isocyanate compound (for example, 2,4-toluene diisocyanate, 2,6- Reaction of toluene diisocyanate, 1,3-benzenedimethyl diisocyanate, 1,4- phenyldimethyl diisocyanate, diphenylmethane 4,4-diisocyanate, etc. to obtain a terminal isocyanate urethane prepolymer And (meth) acrylate having a hydroxyl group (for example, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, polyethylene glycol (meth)acrylate, etc.) The substance obtained by carrying out the reaction.

又，硬化性樹脂並無特別限制，將重量平均分子量不同之2個以上之硬化性樹脂混合較佳。利用該等硬化性樹脂的話，可輕易地控制由於能量線照射所致之樹脂的交聯度，並可提高半導體晶片20的拾取性。又，就該等硬化性樹脂而言，例如，可使用第1硬化性樹脂與重量平均分子量比第1硬化性樹脂大的第2硬化性樹脂的混合物。Further, the curable resin is not particularly limited, and it is preferred to mix two or more curable resins having different weight average molecular weights. By using these curable resins, the degree of crosslinking of the resin due to the irradiation of the energy ray can be easily controlled, and the pickup property of the semiconductor wafer 20 can be improved. In addition, as the curable resin, for example, a mixture of a first curable resin and a second curable resin having a weight average molecular weight larger than that of the first curable resin can be used.

以第1硬化性樹脂與第2硬化性樹脂的混合物作為硬化性樹脂時，第1硬化性樹脂之重量平均分子量為100～1000左右較佳，200～500左右更佳。又，第2硬化性樹脂之重量平均分子量為1000～30000左右較佳，1000～10000左右更佳，2000～5000左右尤佳。進一步，第1硬化性樹脂之官能基數為1～5官能基較佳，第2硬化性樹脂之官能基數為6官能基以上較佳。藉由滿足該等關係，可更加顯著地發揮上述效果。When the mixture of the first curable resin and the second curable resin is used as the curable resin, the weight average molecular weight of the first curable resin is preferably from about 100 to about 1,000, more preferably from about 200 to about 500. Further, the weight average molecular weight of the second curable resin is preferably from about 1,000 to 30,000, more preferably from about 1,000 to 10,000, still more preferably from about 2,000 to 5,000. Further, the number of functional groups of the first curable resin is preferably from 1 to 5, and the number of functional groups of the second curable resin is preferably 6 or more. By satisfying these relationships, the above effects can be more significantly exerted.

硬化性樹脂，相對於基礎樹脂100重量份以5重量份以上500重量份以下進行摻合較佳，以10重量份以上300重量份以下進行摻合更佳，以20重量份以上200重量份以下進行摻合尤佳。藉由如上述般調整硬化性樹脂的摻合量，可使半導體晶片20的拾取性變得優異。The curable resin is preferably blended in an amount of 5 parts by weight or more and 500 parts by weight or less based on 100 parts by weight of the base resin, more preferably 10 parts by weight or more and 300 parts by weight or less, and more preferably 20 parts by weight or more and 200 parts by weight or less. It is especially preferred to carry out the blending. By adjusting the blending amount of the curable resin as described above, the pickup property of the semiconductor wafer 20 can be made excellent.

此外，該硬化性樹脂，於使用雙鍵導入型丙烯酸系樹脂作為上述丙烯酸系樹脂時，亦即使用於側鏈、主鏈中或主鏈的末端具有碳－碳雙鍵者時，可省略其在樹脂組成物中的添加。其原因為，丙烯酸系樹脂為雙鍵導入型丙烯酸系樹脂時，由於能量線的照射，黏接層2因為雙鍵導入型丙烯酸系樹脂所具備之碳－碳雙鍵的功能而硬化，藉此黏接層2的黏接力降低。In addition, when the double bond-introducing acrylic resin is used as the acrylic resin, the curable resin can be omitted even when it is used in a side chain, a main chain, or a terminal of a main chain having a carbon-carbon double bond. Addition in the resin composition. When the acrylic resin is a double bond introduction type acrylic resin, the adhesive layer 2 is cured by the function of the carbon-carbon double bond of the double bond introduction type acrylic resin by the irradiation of the energy ray. The adhesion of the adhesive layer 2 is lowered.

(3)光聚合引發劑 又，黏接層2係因能量線的照射而對於半導體基板7的黏接性降低者，使用紫外線等作為能量線時，為了使硬化性樹脂的聚合引發變得容易，硬化性樹脂中含有光聚合引發劑較佳。(3) Photopolymerization Initiator In addition, when the adhesion layer 2 is lowered by the irradiation of the energy ray, the adhesion to the semiconductor substrate 7 is lowered, and when ultraviolet rays or the like is used as the energy ray, the polymerization initiation of the curable resin is facilitated. The photopolymerization initiator is preferably contained in the curable resin.

光聚合引發劑，例如，可列舉2,2－二甲氧基－1,2－二苯基乙烷－1－酮、1－[4－(2－羥基乙氧基)－苯基]－2－羥基－2－甲基－1－丙烷－1－酮、2－羥基－1－{4－[4－(2－羥基－2－甲基－丙醯基)－苄基]苯基}－2－甲基－丙烷－1－酮、苄基二苯基硫醚、單硫化四甲基秋蘭姆、4－(2－羥基乙氧基)苯基(2－羥基－2－丙基)酮、α－羥基－α,α´－二甲基苯乙酮、2－甲基－2－羥基苯丙酮、1－羥基環己基苯酮、米蚩酮、苯乙酮、甲氧基苯乙酮、2,2－二甲氧基－2－苯基苯乙酮、2,2－二乙氧基苯乙酮、2－甲基－1－[4－(甲硫基)－苯基]－2－啉基丙烷－1－酮、安息香甲醚、安息香***、安息香丙醚、安息香異丙醚、安息香異丁醚、二苯基乙二酮、安息香、聯苄、α－羥基環己基苯酮、苄基二甲基酮、2－羥基甲基苯基丙烷、2－萘磺醯氯、1－苯酮－1,1－丙二酮－2－(鄰乙氧基羰基)肟(1－phenone－1,1－propanedione－2－ (o－ ethoxycarbonyl) oxime)、二苯甲酮、苯甲醯基苯甲酸、4,4’－二甲基胺基二苯甲酮、4,4’－二乙基胺基二苯甲酮、4,4’－二氯二苯甲酮、3,3’－二甲基－4－甲氧基二苯甲酮、鄰丙烯醯氧基二苯甲酮、對丙烯醯氧基二苯甲酮、鄰甲基丙烯醯氧基二苯甲酮、對甲基丙烯醯氧基二苯甲酮、對(甲基)丙烯醯氧基乙氧基二苯甲酮；如單(甲基)丙烯酸1,4－丁二醇酯、單(甲基)丙烯酸1,2－乙二醇酯、單(甲基)丙烯酸1,8－辛二醇酯之丙烯酸酯的二苯甲酮－4－羧酸酯；噻噸酮、2－氯噻噸酮、2－甲基噻噸酮、2,4－二甲基噻噸酮、異丙基噻噸酮、2,4－二氯噻噸酮、2,4－二乙基噻噸酮、2,4－二異丙基噻噸酮、偶氮二異丁腈、β－氯蒽醌、樟腦醌、鹵化酮、醯基氧化膦、醯基膦酸酯、聚乙烯二苯甲酮、氯噻噸酮、十二烷基噻噸酮、二甲基噻噸酮、二乙基噻噸酮、2－乙基蒽醌、三級丁基蒽醌、2,4,5－三芳基咪唑二聚物等，可使用該等中之1種或2種以上倂用。The photopolymerization initiator may, for example, be 2,2-dimethoxy-1,2-diphenylethane-1-one or 1-[4-(2-hydroxyethoxy)-phenyl]- 2-hydroxy-2-methyl-1-propan-1-one, 2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propenyl)-benzyl]phenyl} -2-methyl-propan-1-one, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, 4-(2-hydroxyethoxy)phenyl (2-hydroxy-2-propyl) Ketone, α-hydroxy-α,α ́-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl benzophenone, Michler's ketone, acetophenone, methoxybenzene Ethyl ketone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl ]-2- Lolinylpropan-1-one, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin isopropyl ether, benzoin isobutyl ether, diphenylethylenedione, benzoin, bibenzyl, α-hydroxycyclohexyl benzophenone, benzyl Dimethyl fluorenone, 2-hydroxymethyl phenylpropane, 2-naphthalene sulfonium chloride, 1-benzophenone-1, 1-propanedione-2-(o-ethoxycarbonyl) hydrazine (1-phenone) -1,1-propanedione-2-(o-ethoxycarbonyl) oxime), benzophenone, benzhydrylbenzoic acid, 4,4'-dimethylaminobenzophenone, 4,4'-di Ethylaminobenzophenone, 4,4'-dichlorobenzophenone, 3,3'-dimethyl-4-methoxybenzophenone, o-propylene oxy benzophenone, P-propylene oxybenzophenone, o-methacryloxy benzophenone, p-methacryloxy benzophenone, p-(meth) propylene methoxy ethoxy benzophenone Such as 1,4-butylene glycol (meth)acrylate, 1,2-ethanediol mono(meth)acrylate, acrylate of 1,8-octanediol mono(meth)acrylate Benzophenone-4-carboxylate; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone , 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthene Ketone, azobisisobutyronitrile, β-chloropurine, camphorquinone, halogenated ketone, fluorenylphosphine oxide, decylphosphonate, polyethylene benzophenone, chlorothioxanthone, dodecyl thioxanthene Ketone, dimethyl thioxanthone, diethyl thioxanthone, 2-ethyl hydrazine, tert-butyl hydrazine, 2,4,5-triaryl imidazole dimer, etc., which can be used One type or two or more types are used.

又，其中為二苯甲酮衍生物及烷基苯酮衍生物較佳。該等化合物係於分子中具備作為反應性官能基之羥基者，介由該反應性官能基可連接至基礎樹脂、硬化性樹脂，並能更確實地發揮作為光聚合引發劑的功能。Further, among them, a benzophenone derivative and an alkylphenone derivative are preferred. These compounds are those having a hydroxyl group as a reactive functional group in the molecule, and the reactive functional group can be bonded to the base resin or the curable resin, and can function as a photopolymerization initiator more reliably.

光聚合引發劑，相對於基礎樹脂100重量份以0.1重量份以上50重量份以下進行摻合較佳，以0.5重量份以上10重量份以下進行摻合更佳。藉由如上述般調整光聚合引發劑的摻合量，黏接膠帶100的拾取性變得適宜。The photopolymerization initiator is preferably blended in an amount of from 0.1 part by weight to 50 parts by weight per 100 parts by weight of the base resin, and more preferably from 0.5 part by weight to 10 parts by weight. By adjusting the blending amount of the photopolymerization initiator as described above, the pick-up property of the adhesive tape 100 becomes suitable.

(4)交聯劑 進一步，硬化性樹脂亦可含有交聯劑。藉由含有交聯劑可實現硬化性樹脂的硬化性的提高。(4) Crosslinking agent Further, the curable resin may contain a crosslinking agent. The curability of the curable resin can be improved by containing a crosslinking agent.

交聯劑並無特別限制，例如，可列舉異氰酸酯系交聯劑、環氧系交聯劑、尿素樹脂系交聯劑、羥甲基系交聯劑、螯合物系交聯劑、氮丙啶系交聯劑、三聚氰胺系交聯劑、多價金屬螯合物系交聯劑、酸酐系交聯劑、聚胺系交聯劑、含有羧基之聚合物系交聯劑等。其中異氰酸酯系交聯劑為較佳。The crosslinking agent is not particularly limited, and examples thereof include an isocyanate crosslinking agent, an epoxy crosslinking agent, a urea resin crosslinking agent, a methylol crosslinking agent, a chelate crosslinking agent, and a nitrogen-based crosslinking agent. A pyridine-based crosslinking agent, a melamine-based crosslinking agent, a polyvalent metal chelate-based crosslinking agent, an acid anhydride-based crosslinking agent, a polyamine-based crosslinking agent, and a carboxyl group-containing polymer crosslinking agent. Among them, an isocyanate crosslinking agent is preferred.

異氰酸酯系交聯劑並無特別限制，例如，可列舉多元異氰酸酯的聚異氰酸酯化合物及聚異氰酸酯化合物的三聚物；將使聚異氰酸酯化合物與多元醇化合物反應而得到的末端異氰酸酯化合物的三聚物或末端異氰酸酯胺甲酸乙酯預聚物，利用苯酚、肟類等進行阻斷的封端聚異氰酸酯化合物等。The isocyanate crosslinking agent is not particularly limited, and examples thereof include a polyisocyanate compound of a polyvalent isocyanate and a terpolymer of a polyisocyanate compound, and a trimer of a terminal isocyanate compound obtained by reacting a polyisocyanate compound with a polyol compound or A terminal isocyanate urethane prepolymer, a blocked polyisocyanate compound blocked by phenol, an anthracene or the like.

又，多元異氰酸酯，例如，可列舉2,4－甲苯二異氰酸酯、2,6－甲苯二異氰酸酯、1,3－苯二甲基二異氰酸酯、1,4－苯二甲基二異氰酸酯、二苯基甲烷－4,4’－二異氰酸酯、二苯基甲烷－2,4’－二異氰酸酯、3－甲基二苯基甲烷二異氰酸酯、六亞甲基二異氰酸酯、異佛酮二異氰酸酯、二環己基甲烷－4,4’－二異氰酸酯、二環己基甲烷－2,4’－二異氰酸酯、4,4’－二苯基醚二異氰酸酯、4,4’－[2,2－雙(4－苯氧基苯基)丙烷]二異氰酸酯、2,2,4－三甲基－六亞甲基二異氰酸酯等，可使用該等中之1種或2種以上倂用。其中選自於由2,4－甲苯二異氰酸酯、二苯基甲烷－4,4’－二異氰酸酯及六亞甲基二異氰酸酯構成之群組中之至少1種之多元異氰酸酯為較佳。Further, examples of the polyvalent isocyanate include 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-benzenedimethyl diisocyanate, 1,4-benzenedimethyl diisocyanate, and diphenyl group. Methane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexyl Methane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, 4,4'-diphenyl ether diisocyanate, 4,4'-[2,2-bis(4-benzene As the oxyphenyl)propane]diisocyanate or the 2,2,4-trimethyl-hexamethylene diisocyanate, one type or two or more types of these may be used. Among them, at least one selected from the group consisting of 2,4-toluene diisocyanate, diphenylmethane-4,4'-diisocyanate and hexamethylene diisocyanate is preferred.

交聯劑，相對於基礎樹脂100重量份以0.01重量份以上50重量份以下進行摻合較佳，以5重量份以上50重量份以下進行摻合更佳。藉由如上述般調整交聯劑的摻合量，黏接膠帶100的拾取性變得適宜。The crosslinking agent is preferably blended in an amount of from 0.01 part by weight to 50 parts by weight per 100 parts by weight of the base resin, and more preferably from 5 parts by weight to 50 parts by weight. By adjusting the blending amount of the crosslinking agent as described above, the pick-up property of the adhesive tape 100 becomes suitable.

(5)其他成分 進一步，作為上述各成分(1)～(4)以外的成分，構成黏接層2之樹脂組成物亦可含有抗靜電劑、增黏劑、抗老化劑、黏度調整劑、充填物、著色劑、阻燃劑、軟化劑、抗氧化劑、增塑劑、表面活性劑等中之至少1種。(5) Other components Further, as components other than the above components (1) to (4), the resin composition constituting the adhesive layer 2 may contain an antistatic agent, a tackifier, an anti-aging agent, a viscosity adjuster, and At least one of a filler, a colorant, a flame retardant, a softener, an antioxidant, a plasticizer, a surfactant, and the like.

又，黏接層2的厚度並無特別限制，例如，為1μm以上30μm以下較佳，5μm以上30μm以下更佳，10μm以上20μm以下尤佳。黏接層2的厚度為該等範圍內的話，黏接層2，在對黏接層2的能量施加前發揮良好的黏接力，同時在對黏接層2的能量施加後於黏接層2與半導體基板7之間發揮良好的剝離性。Further, the thickness of the adhesive layer 2 is not particularly limited, and is preferably 1 μm or more and 30 μm or less, more preferably 5 μm or more and 30 μm or less, and still more preferably 10 μm or more and 20 μm or less. When the thickness of the adhesive layer 2 is within the range, the adhesive layer 2 exerts a good adhesive force before the application of the energy to the adhesive layer 2, and at the same time, after the energy applied to the adhesive layer 2 is applied to the adhesive layer 2 Good peeling properties are exhibited between the semiconductor substrate 7 and the semiconductor substrate 7.

然後，該等結構的半導體基板加工用切割膜片100，例如，可如以下般進行製造。Then, the dicing film 100 for processing a semiconductor substrate of such a structure can be manufactured, for example, as follows.

＜半導體基板加工用切割膜片之製造方法＞ 首先，準備切割膜片用基材膜4，並於該切割膜片用基材膜4上形成黏接層2。<Manufacturing Method of Cutting Film for Semiconductor Substrate Processing> First, the base film 4 for dicing the film is prepared, and the adhesive layer 2 is formed on the base film 4 for the dicing film.

切割膜片用基材膜4的製造方法並無特別限定，可列舉使用T模頭或環狀模頭的擠製法、壓延法等公知的方法，以切割膜片用基材膜4的厚度精度的觀點觀之，使用T模頭的擠製法較佳。The method for producing the base film 4 for a dicing film is not particularly limited, and a known method such as an extrusion method or a rolling method using a T die or an annular die is used to cut the thickness accuracy of the base film 4 for a film. From the point of view, the extrusion method using the T die is preferred.

以下對使用T模頭的擠製法進行說明。The extrusion method using the T die will be described below.

首先，將構成表面層42及基材層41之樹脂成分分別進行乾混或熔融混煉，得到各層形成用樹脂。然後，將各層形成用樹脂提供給螺桿式擠製機後，從調整至180～240℃的多層T模頭呈膜片狀擠出，並通過調整至10～50℃的冷卻輥進行冷卻而捲繞。又，亦可暫先取得各層形成用樹脂的丸粒，然後如上述般擠製成形。形成的各層的厚度，可藉由調整擠製機的螺桿旋轉速度而進行調整。First, the resin components constituting the surface layer 42 and the base material layer 41 are each dry-blended or melt-kneaded to obtain a resin for forming each layer. Then, after supplying the resin for forming each layer to the screw extruder, the multilayer T die adjusted to 180 to 240 ° C is extruded in a sheet shape, and is cooled by a cooling roll adjusted to 10 to 50 ° C. Wrap around. Further, pellets of the resin for forming each layer may be temporarily obtained, and then extruded into a shape as described above. The thickness of each layer formed can be adjusted by adjusting the screw rotation speed of the extruder.

於邊通過上述冷卻輥進行冷卻而邊捲繞膜片的步驟中，以確保擴展時膜片不破裂程度的強度，並能提高擴展後的復原性的觀點觀之，在實質上無延伸的狀態下進行捲繞較佳。實質上無延伸係指不進行積極的延伸，包括無延伸，或不影響切割時的基板的翹曲程度的輕微的延伸。通常，只要是膜片的捲繞時不會造成鬆弛程度的拉伸即可。In the step of winding the film while cooling by the cooling roller, the strength of the film is prevented from being broken at the time of expansion, and the recovery after expansion is improved, and there is substantially no extension. It is preferred to carry out the winding. Substantially no extension means that no positive extension is required, including no extension, or a slight extension of the degree of warpage of the substrate when cutting. Usually, it is only required to be stretched without causing a degree of slack when the film is wound.

又，黏接層2，可藉由於切割膜片用基材膜4上，塗布或撒布將係黏接層2之構成材料之樹脂組成物溶解於溶劑中而形成之清漆狀的液狀材料後，使溶劑揮發以形成黏接層2而獲得。Further, the adhesive layer 2 can be formed by coating or spreading a varnish-like liquid material obtained by dissolving a resin composition of a constituent material of the adhesive layer 2 in a solvent on the substrate film 4 for dicing the film. It is obtained by volatilizing a solvent to form the adhesive layer 2.

此外，就溶劑而言，並無特別限制，例如，可列舉甲乙酮、丙酮、甲苯、二甲基甲醛等，可使用該等中之1種或2種以上倂用。In addition, the solvent is not particularly limited, and examples thereof include methyl ethyl ketone, acetone, toluene, and dimethyl formaldehyde. One or more of these may be used.

又，於切割膜片用基材膜4上的液狀材料的塗布或撒布，例如可使用模具塗布、簾式塗布、凹板塗布、逗點式塗布(comma coat)、棒式塗布及唇式塗布(lip coat)等方法而進行。Further, for application or scattering of the liquid material on the base film 4 for cutting the film, for example, die coating, curtain coating, gravure coating, comma coating, bar coating, and lip type can be used. It is carried out by a method such as lip coat.

然後，對於在切割膜片用基材膜4上所形成之黏接層2，以使中心側與外周側分離的方式，沿黏接層2的厚度方向使基材4殘留而以圓環狀將黏接層2的一部分除去，藉此使黏接層2成為具備中心部122與外周部121者。Then, the adhesive layer 2 formed on the base film 4 for dicing the film is left in the thickness direction of the adhesive layer 2 so as to be separated from the outer peripheral side in the thickness direction of the adhesive layer 2 A part of the adhesive layer 2 is removed, whereby the adhesive layer 2 is provided with the center portion 122 and the outer peripheral portion 121.

以圓環狀將黏接層2的一部分除去的方法，例如，可列舉以環繞的方式將要除去的範圍沖壓後，將位於該已沖壓之範圍內的黏接層2除去的方法。A method of removing a part of the adhesive layer 2 in an annular shape may, for example, be a method of removing the adhesive layer 2 located within the stamped range after the range to be removed is pressed in a circumferential manner.

又，對於要除去之範圍的沖壓，例如，可使用利用輥狀模具的方法、利用沖壓模具的方法而進行。其中，可連續製造黏接膠帶100的利用輥狀模具的方法為較佳。Moreover, the press for the range to be removed can be performed, for example, by a method using a roll mold or a method using a press mold. Among them, a method of continuously producing the adhesive tape 100 using a roll mold is preferable.

此外，本步驟中係將黏接層2的一部分以環狀(圓形狀)沖壓而形成中心部122與外周部121，但將黏接層2的一部分沖壓的形狀，只要是在前述半導體裝置的製造方法中能將黏接層2的外周部121固定在晶圓環9上的形狀即可，任何形狀都可以。具體而言，沖壓的形狀，例如，可列舉除上述圓形狀以外，如橢圓狀、圓柱狀之扁圓狀；如四方形狀、五角形狀之多角形狀等。Further, in this step, a part of the adhesive layer 2 is punched in a ring shape (circular shape) to form the center portion 122 and the outer peripheral portion 121, but a shape in which a part of the adhesive layer 2 is punched is as long as it is in the semiconductor device. In the manufacturing method, the outer peripheral portion 121 of the adhesive layer 2 may be fixed to the shape of the wafer ring 9, and any shape may be used. Specifically, the shape of the press may be, for example, an elliptical or cylindrical oblate shape other than the above-described circular shape; a polygonal shape such as a square shape or a pentagonal shape.

然後，對在切割膜片用基材膜4上所形成之黏接層2疊層隔膜，藉此獲得黏接層2被隔膜所覆蓋之切割膜片100。Then, the separator is laminated on the adhesive layer 2 formed on the substrate film 4 for dicing the film, whereby the dicing film 100 in which the adhesive layer 2 is covered by the separator is obtained.

於黏接層2疊層隔膜的方法並無特別限制，例如，可使用利用輥的層壓方法、利用壓力機的層壓方法。其中，以能連續生產的生產性的觀點觀之，利用輥的層壓方法較佳。The method of laminating the separator on the adhesive layer 2 is not particularly limited, and for example, a lamination method using a roll or a lamination method using a press can be used. Among them, a lamination method using a roll is preferred from the viewpoint of productivity capable of continuous production.

此外，隔膜並無特別限制，可列舉聚丙烯膜、聚乙烯膜、聚對苯二甲酸乙二醇酯膜等。Further, the separator is not particularly limited, and examples thereof include a polypropylene film, a polyethylene film, and a polyethylene terephthalate film.

又，由於隔膜在切割膜片100的使用時會被剝離，亦可使用對表面已進行脫模處理者。脫模處理可列舉將脫模劑塗布於隔膜表面的處理、在隔膜表面產生細微凹凸的處理等。此外，脫模劑可列舉矽氧系、醇酸系、氟系等物質。Further, since the separator is peeled off when the dicing film 100 is used, it is also possible to use a mold which has been subjected to mold release treatment. The mold release treatment includes a treatment of applying a release agent to the surface of the separator, a treatment for causing fine unevenness on the surface of the separator, and the like. Further, examples of the release agent include a halogen-based, alkyd-based, and fluorine-based material.

經過如以上之步驟，可形成覆蓋有隔膜之切割膜片100。Through the above steps, the dicing film 100 covered with the separator can be formed.

此外，本實施方式中所製造之覆蓋有隔膜之切割膜片100，係在上述使用切割膜片100之半導體裝置的製造方法中，將切割膜片100從隔膜剝離後而使用。Further, the dicing film 100 covered with the separator manufactured in the present embodiment is used in the method of manufacturing a semiconductor device using the dicing film 100, and the dicing film 100 is peeled off from the separator.

又，從隔膜所覆蓋之黏接層2將該隔膜剝離時，對於黏接層2的面將隔膜以90度以上180度以下的角度進行剝離較佳。將隔膜剝離的角度為該範圍的話，可確實地防止黏接層2與隔膜的界面以外的剝離。Further, when the separator is peeled off from the adhesive layer 2 covered by the separator, it is preferable that the separator is peeled at an angle of not less than 90 degrees and not more than 180 degrees with respect to the surface of the adhesive layer 2. When the angle at which the separator is peeled off is within this range, peeling from the interface between the adhesive layer 2 and the separator can be reliably prevented.

然後，對使用本發明之切割膜片所製造之半導體裝置進行說明。Next, a semiconductor device manufactured using the dicing film of the present invention will be described.

＜半導體裝置＞ 圖1係表示使用本發明之切割膜片所製造之半導體裝置之一例的縱剖面圖。此外，在以下的說明中，圖1中的上側稱為「上」，下側稱為「下」。<Semiconductor Device> Fig. 1 is a longitudinal cross-sectional view showing an example of a semiconductor device manufactured by using the dicing film of the present invention. In the following description, the upper side in FIG. 1 is referred to as "upper" and the lower side is referred to as "lower".

圖1所示之半導體裝置10係QFP(Quad Flat Package)型半導體封裝，具有半導體晶片(半導體元件)20、介由黏著層60而支撐半導體晶片20之晶粒座30、與半導體晶片20電連接之引線40、以及將半導體晶片20密封之封膠部(密封部)50。The semiconductor device 10 shown in FIG. 1 is a QFP (Quad Flat Package) type semiconductor package having a semiconductor wafer (semiconductor element) 20, a die pad 30 supporting the semiconductor wafer 20 via an adhesive layer 60, and being electrically connected to the semiconductor wafer 20. The lead 40 and the sealing portion (sealing portion) 50 that seals the semiconductor wafer 20.

晶粒座30係由金屬基板構成，並具有支撐半導體晶片20之作為支撐體的功能者。The die pad 30 is composed of a metal substrate and has a function of supporting the semiconductor wafer 20 as a support.

該晶粒座30，例如，可使用由Cu、Fe、Ni及該等的合金(例如，Cu系合金、如Fe－42Ni之鐵·鎳系合金)等各種金屬材料所構成之金屬基板、於該金屬基板的表面進行鍍銀/鍍Ni－Pd者、進一步為提高Pd層的穩定性而於鍍Ni－Pd的表面設置有鍍金 (閃金)層者等。For the die pad 30, for example, a metal substrate made of various metal materials such as Cu, Fe, Ni, and the like (for example, a Cu-based alloy such as an iron-nickel alloy of Fe-42Ni) can be used. The surface of the metal substrate is plated with silver or Ni-Pd, and further, to improve the stability of the Pd layer, a gold-plated (flash gold) layer is provided on the surface of the Ni-Pd plate.

又，晶粒座30的俯視形狀，通常，對應於半導體晶片20的俯視形狀，例如為正方形、長方形等四方形。Further, the planar shape of the die pad 30 is generally a square shape such as a square or a rectangle, corresponding to the planar shape of the semiconductor wafer 20.

於晶粒座30的外周部，呈放射狀設置有多個引線40。 該引線40之和晶粒座30相反的側面的端部從封膠部50突出(露出)。A plurality of leads 40 are radially provided on the outer peripheral portion of the die pad 30. An end portion of the lead 40 opposite to the die pad 30 is protruded (exposed) from the seal portion 50.

引線40由導電材料構成，例如，可使用與上述晶粒座30的構成材料相同的材料。The lead 40 is made of a conductive material, and for example, the same material as that of the above-described die pad 30 can be used.

又，亦可於引線40表面進行鍍錫等。藉此，在介由焊料而將半導體裝置10連接至母板所具備之端子時，可提高焊料與引線40的密合性。Further, tin plating or the like may be performed on the surface of the lead 40. Thereby, when the semiconductor device 10 is connected to the terminal provided in the mother board via solder, the adhesion between the solder and the lead 40 can be improved.

半導體晶片20介由黏著層60而固定於晶粒座30。The semiconductor wafer 20 is fixed to the die pad 30 via the adhesive layer 60.

該黏著層60並無特別限制，例如，可使用環氧系黏著劑、丙烯酸系黏著劑、聚醯亞胺系黏著劑及氰酸酯系黏著劑等各種黏著劑而形成。又，黏著層60亦可含有如銀粉、銅粉之金屬顆粒。藉此，可提高黏著層60的熱傳導性，熱量可介由黏著層60從半導體晶片20有效地傳導至晶粒座30，故可提高半導體晶片20的驅動時的散熱性。The adhesive layer 60 is not particularly limited, and may be formed, for example, by using various adhesives such as an epoxy-based adhesive, an acrylic adhesive, a polyimide-based adhesive, and a cyanate-based adhesive. Further, the adhesive layer 60 may contain metal particles such as silver powder or copper powder. Thereby, the thermal conductivity of the adhesive layer 60 can be improved, and heat can be efficiently conducted from the semiconductor wafer 20 to the die pad 30 via the adhesive layer 60, so that heat dissipation during driving of the semiconductor wafer 20 can be improved.

又，半導體晶片20具有電極墊21，該電極墊21與引線40藉由導線22而電連接。藉此半導體晶片20與各引線40電連接。Further, the semiconductor wafer 20 has an electrode pad 21 which is electrically connected to the lead 40 by a wire 22. Thereby, the semiconductor wafer 20 is electrically connected to the respective leads 40.

該導線22的材質並無特別限制，導線22，例如可由Au線、Al線構成。The material of the wire 22 is not particularly limited, and the wire 22 may be composed of, for example, an Au wire or an Al wire.

且，晶粒座30、於晶粒座30的頂面側所設置的各構件及引線40的內側的部分，藉由封膠部50而被密封。其結果為，引線40的外側的端部從由半導體密封材料的硬化物所構成的封膠部50突出。Further, the die pad 30, the members provided on the top surface side of the die pad 30, and the inner portions of the lead wires 40 are sealed by the sealant portion 50. As a result, the outer end portion of the lead 40 protrudes from the seal portion 50 composed of the cured product of the semiconductor sealing material.

該等結構的半導體裝置，例如，可使用本發明之切割膜片如以下般製造。The semiconductor device of such a structure can be manufactured, for example, using the dicing film of the present invention as follows.

＜半導體裝置之製造方法＞ 圖2係說明使用本發明之切割膜片而製造如圖1所示之半導體裝置之方法的縱剖面圖。此外，在以下的說明中，圖2中的上側稱為「上」，下側稱為「下」。<Manufacturing Method of Semiconductor Device> FIG. 2 is a longitudinal cross-sectional view showing a method of manufacturing the semiconductor device shown in FIG. 1 by using the dicing film of the present invention. In addition, in the following description, the upper side in FIG. 2 is called "upper", and the lower side is called "lower".

首先，準備具有基材4與疊層於基材4上之黏接層2之切割膜片100(參照圖2(a) 。)。First, a dicing film 100 having a substrate 4 and an adhesive layer 2 laminated on the substrate 4 is prepared (see Fig. 2(a)).

該切割膜片100由本發明之切割膜片構成，其詳細說明於後進行。The dicing film 100 is composed of the dicing film of the present invention, and the detailed description will be made later.

然後，如圖2(b)所示，在圖中未顯示之切片機平台(dicer table)上設置切割膜片100，於其中心部122，將半導體基板7之無半導體元件側的面放置於黏接層2上，輕輕推壓而疊層半導體基板7。Then, as shown in FIG. 2(b), a dicing sheet 100 is provided on a dicer table not shown in the drawing, and a semiconductor-free side of the semiconductor substrate 7 is placed on the central portion 122 thereof. On the adhesive layer 2, the semiconductor substrate 7 is laminated by gently pressing.

此外，亦可預先於切割膜片100上黏貼半導體基板7後，再設置於切片機平台上。Further, the semiconductor substrate 7 may be pasted on the dicing film 100 in advance, and then placed on the slicer platform.

然後，使用圖中未顯示之切割鋸(刀片)切斷(切割)半導體基板7而將半導體基板7單片化(參照圖2(c ))。Then, the semiconductor substrate 7 is cut (diced) by a dicing saw (blade) not shown in the drawing, and the semiconductor substrate 7 is singulated (see FIG. 2(c)).

此時，為了防止半導體基板7的切斷時所產生的粉塵飛散，且進一步抑制半導體基板7之不必要的加熱，於對半導體基板7供給切削水的同時，將半導體基板7切斷。At this time, in order to prevent the dust generated during the cutting of the semiconductor substrate 7 from scattering, and to further suppress unnecessary heating of the semiconductor substrate 7, the semiconductor substrate 7 is cut while the cutting water is supplied to the semiconductor substrate 7.

又，切割膜片100具有緩衝作用，防止將半導體基板7切斷時產生斷裂、缺口等。Further, the dicing film 100 has a buffering function to prevent breakage, chipping, and the like from occurring when the semiconductor substrate 7 is cut.

進一步，使用刀片的半導體基板7的切斷，如圖2(c)所示，以到達基材4的厚度方向的中途的方式進行。藉此，可確實地進行半導體基板的單片化。Further, the cutting of the semiconductor substrate 7 using the blade is performed so as to reach the middle of the thickness direction of the substrate 4 as shown in FIG. 2( c ). Thereby, the singulation of the semiconductor substrate can be reliably performed.

然後，對切割膜片100所具備之黏接層2施加能量，藉此降低黏接層2之對於半導體基板7之黏接性。 藉此成為在黏接層2與半導體基板7之間產生剝離的狀態。Then, energy is applied to the adhesive layer 2 provided in the dicing film 100, whereby the adhesion of the adhesive layer 2 to the semiconductor substrate 7 is lowered. Thereby, a state in which peeling occurs between the adhesive layer 2 and the semiconductor substrate 7 is achieved.

對黏接層2施加能量的方法並無特別限制，例如，可列舉對黏接層2照射能量線的方法、加熱黏接層2的方法等，其中，使用從黏接膠帶100之基材4側對黏接層2照射能量線的方法較佳。The method of applying energy to the adhesive layer 2 is not particularly limited, and examples thereof include a method of irradiating the adhesive layer 2 with an energy ray, a method of heating the adhesive layer 2, and the like, wherein a substrate 4 from the adhesive tape 100 is used. The method of irradiating the energy layer to the adhesive layer 2 is preferred.

該方法，由於半導體晶片20無須經歷不必要之熱歷程，又，可相對簡單地、有效地對黏接層2施加能量，因此可作為施加能量的方法而適合地使用。In this method, since the semiconductor wafer 20 does not have to undergo an unnecessary thermal history, energy can be applied to the adhesive layer 2 relatively simply and efficiently, and thus can be suitably used as a method of applying energy.

又，就能量線而言，例如，可列舉紫外線，如電子束、離子束之粒子線，或將該等能量線之2種以上組合而成者。其中，特別是使用紫外線較佳。使用紫外線的話，可有效地降低黏接層2之對於半導體基板7之黏接性。In addition, examples of the energy ray include ultraviolet rays, such as an electron beam, a particle beam of an ion beam, or a combination of two or more of these energy lines. Among them, it is preferred to use ultraviolet rays in particular. When ultraviolet rays are used, the adhesion of the adhesive layer 2 to the semiconductor substrate 7 can be effectively reduced.

然後，將切割膜片100以在圖中未顯示之擴展裝置中呈放射狀拉伸，而將單片化的半導體基板7(半導體晶片20)隔開一定的間隔(參照圖2(d))，然後，利用針等使該半導體晶片20成為上突的狀態，在該狀態下，藉由利用真空夾頭或真空吸筆(Air Pincette)所產生的吸著等而拾取(參照圖2(e)。)。Then, the dicing film 100 is radially stretched in an expansion device not shown in the drawing, and the singulated semiconductor substrate 7 (semiconductor wafer 20) is spaced apart by a certain interval (refer to FIG. 2(d)). Then, the semiconductor wafer 20 is brought up by a needle or the like, and in this state, it is picked up by suction using a vacuum chuck or a vacuum pen (Air Pincette) (refer to FIG. 2 (e). ))).

藉由具有如以上之步驟之半導體裝置之製造方法，可獲得半導體裝置10，但不限定於該種情況，於各種方式的半導體封裝的製造中均可適用切割膜片100，例如，可適用於雙列直插封裝(DIP)、塑膠引腳晶片載體封裝(PLCC)、薄型(low profile)四側引腳扁平封裝(LQFP)、小輪廓封裝(SOP)、小輪廓J 型腳封裝 (SOJ)、薄型小輪廓封裝(TSOP)、薄型(thin)四側引腳扁平封裝(TQFP)、捲帶式晶片載體封裝(TCP)、球柵陣列封裝(BGA)、晶片尺寸封裝(CSP)、矩陣陣列封裝·球柵陣列封裝(MAPBGA)、晶片堆疊型晶片尺寸封裝等的存儲器、邏輯元件。The semiconductor device 10 can be obtained by the manufacturing method of the semiconductor device having the above steps. However, the present invention is not limited to this case, and the dicing film 100 can be applied to the manufacture of various types of semiconductor packages, for example, applicable to Dual in-line package (DIP), plastic lead wafer carrier package (PLCC), low profile four-sided pin flat package (LQFP), small outline package (SOP), small outline J-foot package (SOJ) Thin outline package (TSOP), thin four-sided flat package (TQFP), tape carrier package (TCP), ball grid array package (BGA), chip size package (CSP), matrix array Memory, logic elements such as packaged ball grid array package (MAPBGA), wafer stacked type wafer size package, and the like.

以上對本發明之半導體基板加工用切割膜片進行了說明，但本發明並不限定於此。 【實施例】Although the dicing film for processing a semiconductor substrate of the present invention has been described above, the present invention is not limited thereto. [Examples]

然後，對本發明之具體實施例進行說明。 此外，本發明並不以任何方式受限於該等實施例之記載。Next, specific embodiments of the present invention will be described. Furthermore, the invention is not limited in any way by the description of the embodiments.

＜原料＞ 實施例及比較例之切割膜片用基材膜之製作中所使用的原料如下所述。 離子聚合物樹脂「HIMILAN1855」(Du Pont-Mitsui Polychemicals Co.,Ltd.製，金屬原子Zn，MFR 1.0　熔點86℃) 離子聚合物樹脂「HIMILAN1554」(Du Pont-Mitsui Polychemicals Co.,Ltd.製，金屬原子Zn，MFR 1.3　熔點97℃) 離子聚合物樹脂「HIMILAN1650」(Du Pont-Mitsui Polychemicals Co.,Ltd.製，金屬原子Zn，MFR 1.5　熔點96℃) 離子聚合物樹脂「HIMILAN1652」(Du Pont-Mitsui Polychemicals Co.,Ltd.製，金屬原子Zn，MFR 5.5　熔點98℃) 離子聚合物樹脂「HIMILAN1601」(Du Pont-Mitsui Polychemicals Co.,Ltd.製，金屬原子Na，MFR 1.3　熔點97℃) 低密度聚乙烯LDPE「L211」(住友化學製，熔點113℃) 低密度聚乙烯LDPE「1520F」(宇部丸善聚乙烯製，熔點114℃) 抗靜電劑「 PELESTAT212」(三洋化成工業製，聚醚/聚烯烴嵌段聚合物) 抗靜電劑「 PELESTAT230」(三洋化成工業製，聚醚/聚烯烴嵌段聚合物) 抗靜電劑「ELECTRO-STRIPPER AC」(花王製，兩性表面活性劑)<Materials> The raw materials used in the production of the base film for dicing the film of the examples and the comparative examples are as follows. Ionic polymer resin "HIMILAN 1855" (manufactured by Du Pont-Mitsui Polychemicals Co., Ltd., metal atom Zn, MFR 1.0 melting point 86 ° C) ionic polymer resin "HIMILAN 1554" (manufactured by Du Pont-Mitsui Polychemicals Co., Ltd., Metal atom Zn, MFR 1.3 melting point 97 ° C) Ionic polymer resin "HIMILAN 1650" (manufactured by Du Pont-Mitsui Polychemicals Co., Ltd., metal atom Zn, MFR 1.5 melting point 96 ° C) Ionic polymer resin "HIMILAN 1652" (Du Pont) -Mitsui Polychemicals Co., Ltd., metal atom Zn, MFR 5.5 melting point 98 ° C) Ionic polymer resin "HIMILAN 1601" (manufactured by Du Pont-Mitsui Polychemicals Co., Ltd., metal atom Na, MFR 1.3 melting point 97 ° C) Low-density polyethylene LDPE "L211" (manufactured by Sumitomo Chemical Co., Ltd., melting point 113 °C) Low-density polyethylene LDPE "1520F" (made by Ube Maruzen Polyethylene, melting point 114 °C) Antistatic agent "PELESTAT212" (Sanyo Chemical Co., Ltd., polyether /Polyolefin block polymer) Antistatic agent "PELESTAT230" (Sanyo Chemical Industry, polyether / polyolefin block polymer) Antistatic agent "ELECTRO-STRIPPER AC" (Kao, amphoteric surfactant)

＜黏接劑層原料＞ 實施例及比較例之黏接劑層中使用下列原料。 ＜基礎樹脂＞ 下列丙烯酸共聚物，係將丙烯酸丁酯(BA)與丙烯酸(AA)按以下的重量比率進行混合，並藉由常用的方法於甲苯溶劑中使其進行溶液聚合而獲得。 丙烯酸共聚物1(BA/AA＝90/10，重量平均分子量60萬) ＜UV硬化樹脂＞ 胺甲酸乙酯丙烯酸酯1(新中村化學工業(股)公司製，商品名：UA－33H)：20重量份 ＜交聯劑＞ 聚異氰酸酯化合物(商品名「 CORONATE L」，日本聚胺酯工業(股)公司製) ＜光引發劑＞ 二苯甲酮系光引發劑(商品名「IRGACURE651」，Ciba Specialty Chemicals Co., Ltd.製)<Adhesive Layer Raw Material> The following raw materials were used in the adhesive layers of the examples and the comparative examples. <Base Resin> The following acrylic copolymer was obtained by mixing butyl acrylate (BA) and acrylic acid (AA) in the following weight ratio, and carrying out solution polymerization in a toluene solvent by a usual method. Acrylic Copolymer 1 (BA/AA=90/10, weight average molecular weight: 600,000) <UV hardening resin> Amino acrylate acrylate 1 (manufactured by Shin-Nakamura Chemical Co., Ltd., trade name: UA-33H): 20 parts by weight of <crosslinking agent> Polyisocyanate compound (trade name "CORONATE L", manufactured by Japan Polyurethane Industry Co., Ltd.) <Photoinitiator> Benzophenone photoinitiator (trade name "IRGACURE651", Ciba Specialty Chemicals Co., Ltd.)

(實施例1) ＜切割膜片用基材膜之製作＞ 使用離子聚合物樹脂「HIMILAN1855」作為表面層形成用樹脂。 又，將低密度聚乙烯LDPE「F222NH」80質量%與抗靜電劑「PELESTAT212」20質量%進行乾混，得到基材層形成用樹脂。然後，將得到的各層形成用樹脂提供給調整至200℃的各擠製機，以成為表面層/基材層的順序的方式從200℃的2層模具中擠出，並在設定為20℃的冷卻輥中冷卻固化，並在實質上無延伸的狀態下進行捲繞，得到2層結構的切割膜片用基材膜。實施例1中表面層的厚度為100μm，基材層的厚度為50μm，切割膜片用基材膜全體的厚度為150μm。(Example 1) <Preparation of base film for dicing film> The ionic polymer resin "HIMILAN 1855" was used as a resin for forming a surface layer. In addition, 80% by mass of the low-density polyethylene LDPE "F222NH" and 20% by mass of the antistatic agent "PELESTAT212" were dry-blended to obtain a resin for forming a base material layer. Then, each of the obtained layer-forming resins was supplied to each extruder adjusted to 200 ° C, and extruded from a 2-layer mold at 200 ° C in the order of the surface layer/substrate layer, and set at 20 ° C. The cooling roll was cooled and solidified, and wound up in a state of substantially no elongation to obtain a base film for a dicing film having a two-layer structure. In the first embodiment, the thickness of the surface layer was 100 μm, the thickness of the base material layer was 50 μm, and the thickness of the entire base film for the dicing film was 150 μm.

＜切割膜片之製作＞ 於如上述般製作之實施例1之切割膜片用基材膜之表面層上設置黏接劑層，得到切割膜片。具體而言，使用上述基礎樹脂49.8質量%、UV硬化樹脂39.8質量%、交聯劑6.5質量%及光引發劑3.9質量%，溶解於乙酸乙酯中混合後，以使乾燥後的厚度成為20μm的方式將其棒式塗布於切割膜片用基材膜的表面層上後，於80℃乾燥10分鐘而得到切割膜片。<Production of dicing film> An adhesive layer was provided on the surface layer of the base film for dicing film of Example 1 produced as described above to obtain a dicing film. Specifically, 49.8 mass% of the base resin, 39.8% by mass of the UV curable resin, 6.5% by mass of the crosslinking agent, and 3.9 mass% of the photoinitiator were used, and the mixture was dissolved in ethyl acetate to have a thickness of 20 μm after drying. After the bar was applied to the surface layer of the base film for dicing the film, it was dried at 80 ° C for 10 minutes to obtain a diced film.

(實施例2～9、比較例1、2) 如表1所示般變更樹脂配比，除此以外，利用與實施例1同樣的方法製作切割膜片用基材膜及切割膜片。(Examples 2 to 9 and Comparative Examples 1 and 2) A base film for a dicing film and a dicing film were produced in the same manner as in Example 1 except that the resin ratio was changed as shown in Table 1.

＜切削碎屑特性＞ 切削碎屑特性如下述般進行評價。首先，於實施例1～9、比較例1、2之切割膜片貼合玻璃環氧樹脂製仿真基板(密封材：G760L，住友電木(股)公司製)(60mm×15mm×1.2mm厚)，然後於下列條件下進行切割，並進行切割線的觀察，計算從分割線出來的長度為100μm以上的切削碎屑的數量，而對切削碎屑特性進行評價，評價結果如表1所示。 判定結果如下所示。 切削碎屑的數量為0～5條：◎ 切削碎屑的數量為6～10條：○ 切削碎屑的數量為11條以上：╳ [切割條件]　 切割裝置：「DAD－3350」(商品名，DISCO公司製) 切割刀片：「P08－SDC220」(商品名，DISCO公司製) 刀片旋轉速度：30000rpm 切割速度：100mm/sec 切入：從切割膜片表面切入100μm(對於表面層之切入量為80μm) 切割尺寸：10mm×10mm 刀片冷卻劑：2L/min<Cutting Debris Characteristics> The cutting debris characteristics were evaluated as follows. First, the dicing film of Examples 1 to 9 and Comparative Examples 1 and 2 was bonded to a glass epoxy resin dummy substrate (sealing material: G760L, manufactured by Sumitomo Bakelite Co., Ltd.) (60 mm × 15 mm × 1.2 mm thick) Then, the cutting was performed under the following conditions, and the cutting line was observed, and the number of cutting chips having a length of 100 μm or more from the dividing line was calculated, and the cutting debris characteristics were evaluated. The evaluation results are shown in Table 1. . The judgment result is as follows. The number of cutting chips is 0 to 5: ◎ The number of cutting chips is 6 to 10: ○ The number of cutting chips is 11 or more: ╳ [Cutting conditions] Cutting device: "DAD-3350" (trade name) , manufactured by DISCO) Cutting blade: "P08-SDC220" (trade name, manufactured by DISCO) Blade rotation speed: 30000 rpm Cutting speed: 100 mm/sec Cutting: 100 μm cut from the surface of the cutting film (cutting amount for surface layer is 80 μm) Cutting size: 10mm × 10mm blade coolant: 2L / min

＜耐融接特性＞ 耐融接特性如下述般進行評價。首先，於實施例1～9、比較例1、2之切割膜片貼合玻璃環氧樹脂製仿真基板(密封材：G760L，住友電木(股)公司製)(60mm×15mm×1.2mm厚)，然後於下列條件下進行切割。此時，針對基材膜之對於切片機平台的融接特性進行評價。切割後，針對是否可見到對於切片機平台的融接進行評價。 未見到對於切片機平台的融接：○ 可見到對於切片機平台的融接：╳ [切割條件]　 切割裝置：「DAD－3350」(商品名，DISCO公司製) 切割刀片：「P08－SDC220」(商品名，DISCO公司製) 刀片旋轉速度：30000rpm 切割速度：100mm/sec 切入：從切割膜片表面切入100μm(對於表面層之切入量為80μm) 切割尺寸：2mm×2mm 刀片冷卻劑：0.5L/min<Throughing Resistance Characteristics> The fusion resistance characteristics were evaluated as follows. First, the dicing film of Examples 1 to 9 and Comparative Examples 1 and 2 was bonded to a glass epoxy resin dummy substrate (sealing material: G760L, manufactured by Sumitomo Bakelite Co., Ltd.) (60 mm × 15 mm × 1.2 mm thick) ), and then cut under the following conditions. At this time, the fusion properties of the substrate film to the microtome platform were evaluated. After cutting, the fusion of the slicer platform was evaluated for whether it was visible. No fusion to the microtome platform was observed: ○ Fusion to the microtome platform was observed: ╳ [Cutting conditions] Cutting device: "DAD-3350" (trade name, manufactured by DISCO) Cutting blade: "P08-SDC220 (trade name, manufactured by DISCO) Blade rotation speed: 30000 rpm Cutting speed: 100 mm/sec Cutting: 100 μm cut from the surface of the cut film (cutting amount for the surface layer is 80 μm) Cutting size: 2 mm × 2 mm Blade coolant: 0.5 L/min

[表1] [Table 1]

如表1所示，實施例1～9之切割膜片，其基材由基材層與於該基材層之一主面上設置之表面層之2層構成，該基材層含有低密度聚乙烯，該表面層含有離子聚合物樹脂，因此切削碎屑特性、耐融接特性優異。 與此相對，比較例1之切割膜片，其基材僅由離子聚合物樹脂構成，因此耐融接特性差。 又，比較例2之切割膜片，其基材僅由低密度聚乙烯構成，因此切削碎屑特性差。  [產業上利用性]As shown in Table 1, the dicing sheets of Examples 1 to 9 have a base material composed of two layers of a base material layer and a surface layer provided on one main surface of the base material layer, the base material layer having a low density. Polyethylene, which has an ionic polymer resin, is excellent in cutting chip characteristics and fusion resistance. On the other hand, in the dicing film of Comparative Example 1, since the base material was composed only of the ionic polymer resin, the splicing resistance was inferior. Further, in the dicing film of Comparative Example 2, since the base material was composed only of low-density polyethylene, the cutting chip characteristics were inferior. [Industrial use]

藉由使用本發明之切割膜片用基材膜，可於切割步驟中減少切削碎屑，且其擴展性及復原性優異，在產業上係有用。By using the base film for a dicing film of the present invention, it is possible to reduce cutting chips in the cutting step, and it is excellent in expandability and restorability, and is industrially useful.

2‧‧‧黏接層
4‧‧‧基材
7‧‧‧半導體基板
9‧‧‧晶圓環
10‧‧‧半導體裝置
20‧‧‧半導體晶片
21‧‧‧電極墊
22‧‧‧導線
30‧‧‧晶粒座
40‧‧‧引線
41‧‧‧基材層
42‧‧‧表面層
50‧‧‧封膠部
60‧‧‧黏著層
100‧‧‧切割膜片
121‧‧‧外周部
122‧‧‧中心部2‧‧‧Adhesive layer
4‧‧‧Substrate
7‧‧‧Semiconductor substrate
9‧‧‧ wafer ring
10‧‧‧Semiconductor device
20‧‧‧Semiconductor wafer
21‧‧‧electrode pads
22‧‧‧Wire
30‧‧‧ die holder
40‧‧‧ lead
41‧‧‧Substrate layer
42‧‧‧ surface layer
50‧‧‧ Sealing Department
60‧‧‧Adhesive layer
100‧‧‧ cutting diaphragm
121‧‧‧The outer part
122‧‧‧ Central Department

[圖1]係表示使用本發明之半導體基板加工用切割膜片之半導體裝置之一例的縱剖面圖。 [圖2](a)~(e)係說明使用本發明之半導體基板加工用切割膜片而製造如圖1所示之半導體裝置之方法的縱剖面圖。 [圖3]係表示本發明之半導體基板加工用切割膜片之實施方式的縱剖面圖。FIG. 1 is a longitudinal cross-sectional view showing an example of a semiconductor device using a dicing film for processing a semiconductor substrate of the present invention. [Fig. 2] (a) to (e) are longitudinal cross-sectional views showing a method of manufacturing a semiconductor device shown in Fig. 1 by using a dicing film for processing a semiconductor substrate of the present invention. Fig. 3 is a longitudinal cross-sectional view showing an embodiment of a dicing film for processing a semiconductor substrate of the present invention.

10‧‧‧半導體裝置 10‧‧‧Semiconductor device

20‧‧‧半導體晶片 20‧‧‧Semiconductor wafer

21‧‧‧電極墊 21‧‧‧electrode pads

22‧‧‧導線 22‧‧‧Wire

30‧‧‧晶粒座 30‧‧‧ die holder

40‧‧‧引線 40‧‧‧ lead

50‧‧‧封膠部 50‧‧‧ Sealing Department

60‧‧‧黏著層 60‧‧‧Adhesive layer

Claims (12)

一種切割膜片用基材膜，包含基材層與於該基材層之一主面上設置之表面層； 其特徵為： 該基材層含有低密度聚乙烯， 該表面層含有離子聚合物樹脂， 該離子聚合物樹脂之MFR(測定方法：根據JIS K 7210，測定條件：溫度190℃、荷重21.18N)為3g/10min以下。A substrate film for cutting a film, comprising a substrate layer and a surface layer disposed on one main surface of the substrate layer; wherein the substrate layer comprises low density polyethylene, and the surface layer contains an ionic polymer Resin, MFR of the ionic polymer resin (measurement method: according to JIS K 7210, measurement conditions: temperature: 190 ° C, load: 21.18 N) is 3 g/10 min or less. 如申請專利範圍第1項之切割膜片用基材膜，其中，該離子聚合物樹脂係利用金屬離子將以乙烯、(甲基)丙烯酸、及(甲基)丙烯酸烷基酯作為聚合物之結構成分之三元共聚物進行交聯而得者。The substrate film for a dicing film according to the first aspect of the invention, wherein the ionic polymer resin uses ethylene, (meth)acrylic acid, and alkyl (meth)acrylate as a polymer by using metal ions. The terpolymer of the structural component is obtained by crosslinking. 如申請專利範圍第2項之切割膜片用基材膜，其中，該金屬離子係鋅離子。The substrate film for a dicing film according to the second aspect of the invention, wherein the metal ion is a zinc ion. 如申請專利範圍第1至3項中任一項之切割膜片用基材膜，其中，該低密度聚乙烯之熔點為90℃以上140℃以下。The substrate film for a dicing film according to any one of claims 1 to 3, wherein the low-density polyethylene has a melting point of 90 ° C or more and 140 ° C or less. 如申請專利範圍第1至3項中任一項之切割膜片用基材膜，其中，該基材層含有抗靜電劑。The substrate film for a dicing film according to any one of claims 1 to 3, wherein the substrate layer contains an antistatic agent. 如申請專利範圍第1至3項中任一項之切割膜片用基材膜，其中，該表面層係藉由切割刀片切入之切入層。The substrate film for a dicing film according to any one of claims 1 to 3, wherein the surface layer is a cut-in layer cut by a dicing blade. 一種切割膜片，係於如申請專利範圍第1至6項中任一項之切割膜片用基材膜之表面層側之主面上設置有黏接層。A dicing film provided with an adhesive layer on a main surface side of a surface layer side of a substrate film for a dicing film according to any one of claims 1 to 6. 如申請專利範圍第7項之切割膜片，其中，該黏接層含有具黏接性之基礎樹脂。The dicing film of claim 7, wherein the adhesive layer comprises a base resin having adhesiveness. 如申請專利範圍第7或8項之切割膜片，其中，該基礎樹脂係丙烯酸系樹脂。The dicing film of claim 7 or 8, wherein the base resin is an acrylic resin. 如申請專利範圍第7或8項之切割膜片，其中，該黏接層更含有藉由能量的施加而硬化之硬化性樹脂。The dicing film of claim 7 or 8, wherein the adhesive layer further contains a curable resin which is hardened by application of energy. 一種附半導體基板之切割膜片，係於如申請專利範圍第7至10項中任一項之切割膜片上疊層了半導體基板。A dicing film with a semiconductor substrate on which a semiconductor substrate is laminated on a dicing film according to any one of claims 7 to 10. 一種刀片切割方法，係使用如申請專利範圍第7至11項中任一項之切割膜片。A blade cutting method using the dicing film of any one of claims 7 to 11.
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TWI800654B (en) * 2018-06-06 2023-05-01 日商迪思科股份有限公司 Wafer processing method

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WO2016080324A1 (en) 2016-05-26
JPWO2016080324A1 (en) 2017-04-27

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