JP5666875B2 - Base film for tape for semiconductor manufacturing process - Google Patents

Base film for tape for semiconductor manufacturing process Download PDF

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JP5666875B2
JP5666875B2 JP2010236363A JP2010236363A JP5666875B2 JP 5666875 B2 JP5666875 B2 JP 5666875B2 JP 2010236363 A JP2010236363 A JP 2010236363A JP 2010236363 A JP2010236363 A JP 2010236363A JP 5666875 B2 JP5666875 B2 JP 5666875B2
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base film
meth
mass
acrylic acid
component
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JP2012089732A (en
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小林　秀一
秀一 小林
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Achilles Corp
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Achilles Corp
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Priority to KR1020137012871A priority patent/KR101686287B1/en
Priority to PCT/JP2011/073689 priority patent/WO2012053448A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/241—Polyolefin, e.g.rubber
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/16—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the structure of the carrier layer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2423/00—Presence of polyolefin
    • C09J2423/006—Presence of polyolefin in the substrate

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)

Description

本発明は、半導体ウエハをチップ状にダイシングする際、該半導体ウエハを固定するために用いる半導体製造工程用テープの基材フィルムに関するものであり、詳細には、ダイシング特性、エキスパンド性、柔軟性、耐熱性及び成形性に優れる、２元共重合体のアイオノマー樹脂及び３元共重合体の２成分を含む基材フィルムに関する。   The present invention relates to a base film for a semiconductor manufacturing process tape used for fixing a semiconductor wafer when dicing the semiconductor wafer into chips. Specifically, the present invention relates to dicing characteristics, expandability, flexibility, The present invention relates to a base film containing a binary copolymer ionomer resin having excellent heat resistance and moldability and a binary copolymer.

シリコン、ガリウム、砒素などの半導体ウエハは大径の状態で製造された後、パターンが形成され、素子小片に切断分離（ダイシング）されるが、この際、半導体ウエハを固定するために、主に、ウエハを固定する粘着剤層と基材フィルムから構成される半導体製造工程用テープが使用される。
ダイシングされた素子小片は、その後、ピックアップ工程を容易に行うために半導体製造工程用テープを縦横方向に均一に拡張（エキスパンド）して、素子小片の間隔を均一に広げる工程に付されることになるが、半導体製造工程用テープは、これらの工程において、高温にさらされる可能性がある。
上記のこと等から、半導体製造工程用テープに用いる基材フィルムは、基材フィルム成形時において良好な成形性を有すること、耐熱性を有すること、良好な柔軟性を有し且つ縦横方向に均一に拡張する性能（エキスパンド性）を有すること等の性能が要求される。
また、ダイシング工程は、一般に、回転しながら移動する丸刃によってウエハの切断を行うものであるが、その際、半導体製造工程の省力化と半導体品質の向上を目的として、半導体ウエハを保持する半導体製造工程用テープの基材内部まで切り込みを行うフルカットと呼ばれる切断方式が、現在の主流となってきている。しかし、該切断方式は、テープの内部まで切り込みを行う結果として、該テープが溶融・延伸されて糸状となった切削屑が発生し、該屑が素子小片に付着して半導体素子の信頼性を低下させたり、ピックアップ工程の際に認識エラーを引き起こすという新たな問題を生じている。
特許文献１（特開平０９−００８１１１号公報（特許第３８４５１２９号））には、フルカットダイジング方法においても切削屑の半導体ウエハ表面への残留を防止しうるウエハ固定用粘着テープとして、樹脂層Ｂ（基材フィルム）が主に、エチレン、（メタ）アクリル酸及び（メタ）アクリル酸アルキルエステルを重合体の構成成分とする、３元共重合体であるウエハ固定用粘着テープ並びに前記３元共重合体を金属イオンで架橋したアイオノマー樹脂を樹脂層Ｂ（基材フィルム）の主成分とするウエハ固定用粘着テープを開示する。
一方、引用文献２（特開２００８−２３５７１６号公報）には、レーザー光による捺印加工部における硬化樹脂表面のレーザーアッシュを剥離することなく、捺印加工の視認性悪化を生じることのない半導体デバイス加工用粘着テープの基材として、エチレン及びアクリル酸を重合体の構成成分とする２元共重合体を金属イオンで架橋したアイオノマー樹脂を用いることを開示する。 After semiconductor wafers such as silicon, gallium, and arsenic are manufactured in a large diameter state, a pattern is formed and cut and separated (diced) into element pieces. At this time, in order to fix the semiconductor wafer, mainly, The tape for semiconductor manufacturing process comprised from the adhesive layer which fixes a wafer, and a base film is used.
The diced element pieces are then subjected to a process of uniformly expanding (expanding) the tape for semiconductor manufacturing process in the vertical and horizontal directions so as to facilitate the pick-up process, and uniformly extending the distance between the element pieces. However, the semiconductor manufacturing process tape may be exposed to high temperatures in these processes.
From the above, the base film used for the tape for semiconductor manufacturing process has good moldability at the time of base film molding, heat resistance, good flexibility and uniform in the vertical and horizontal directions Therefore, it is required to have performance (expandability) and the like.
The dicing process generally involves cutting a wafer with a circular blade that moves while rotating. At that time, a semiconductor that holds a semiconductor wafer for the purpose of saving labor in the semiconductor manufacturing process and improving semiconductor quality. A cutting method called full cut, which cuts into the base material of the tape for manufacturing process, has become the current mainstream. However, in this cutting method, as a result of cutting into the inside of the tape, the cutting and melting of the tape is generated to form a thread-like cutting scrap, and the scrap adheres to the element small piece to improve the reliability of the semiconductor element. There is a new problem of reducing or causing a recognition error during the pickup process.
Patent Document 1 (Japanese Patent Application Laid-Open No. 09-008111 (Patent No. 3845129)) discloses a resin layer as an adhesive tape for fixing a wafer that can prevent cutting chips from remaining on the surface of a semiconductor wafer even in a full-cut dicing method. B (base film) mainly comprises ethylene, (meth) acrylic acid and (meth) acrylic acid alkyl ester as constituent components of the polymer, and a ternary copolymer adhesive tape for wafer fixing and the ternary Disclosed is a pressure-sensitive adhesive tape for fixing a wafer comprising an ionomer resin obtained by crosslinking a copolymer with metal ions as a main component of a resin layer B (base film).
On the other hand, in cited document 2 (Japanese Patent Application Laid-Open No. 2008-235716), semiconductor device processing that does not deteriorate the visibility of the stamping process without peeling off the laser ash on the surface of the cured resin in the stamped part by laser light. It is disclosed that an ionomer resin obtained by crosslinking a binary copolymer having ethylene and acrylic acid as a constituent component of a polymer with metal ions is used as a base material for a pressure-sensitive adhesive tape.

特開平０９−００８１１１号公報（特許第３８４５１２９号）JP 09-008111 A (Patent No. 3845129) 特開２００８−２３５７１６号公報JP 2008-235716 A

特許文献１に記載の、エチレン、（メタ）アクリル酸及び（メタ）アクリル酸アルキルエステルを重合体の構成成分とする３元共重合体を主成分とするウエハ固定用粘着テープ
の基材フィルムは、確かに、糸状屑のような切削屑が残留せず、良好なダイシング特性を有するものであり、加えて、基材フィルム成形時において良好な成形性を有し、耐熱性を有し、良好な柔軟性を有するものであったが、エキスパンド性、即ち、縦横方向に均一に拡張する性能が不十分であった。
また、前記３元共重合体を金属イオンで架橋したアイオノマー樹脂を主成分とするウエハ固定用粘着テープの基材フィルムは、良好なダイシング特性を有し、耐熱性を有し、良好な柔軟性を有するものであったが、成形性が不十分で、基材フィルムの成形時にアイオノマー樹脂の吐出が安定しなかったり、タック性があるために成形してロール状に巻き取った際にフィルム同士が付着し解反性が損なわれる不具合が観察され、また、エキスパンド性も必ずしも十分なものではない場合があった。 The base film of the pressure-sensitive adhesive tape for fixing a wafer mainly comprising a terpolymer having ethylene, (meth) acrylic acid, and (meth) acrylic acid alkyl ester as constituents of the polymer described in Patent Document 1 Certainly, there is no cutting waste such as filamentous waste, and it has good dicing characteristics. In addition, it has good moldability at the time of molding the base film, has heat resistance, and good However, the expandability, that is, the ability to expand uniformly in the vertical and horizontal directions was insufficient.
In addition, the base film of the adhesive tape for wafer fixing mainly composed of an ionomer resin obtained by crosslinking the terpolymer with metal ions has good dicing characteristics, heat resistance, and good flexibility. However, the moldability is insufficient, the ionomer resin discharge is not stable at the time of forming the base film, or because of the tackiness, the films are wound together in a roll shape. In some cases, the problem that the anti-resolving property is impaired due to the adhesion of the resin was observed, and the expandability was not always sufficient.

従って、本発明は、上記の問題点を解消する、即ち、ダイシング特性、エキスパンド性、柔軟性、耐熱性及び成形性に優れる、半導体製造工程用テープの基材フィルムの提供を課題とする。   Accordingly, an object of the present invention is to provide a base film for a semiconductor manufacturing process tape that solves the above-described problems, that is, has excellent dicing characteristics, expandability, flexibility, heat resistance, and moldability.

本発明者等は、例えば、引用文献２（本発明とはその用途・目的において異なる）に記載されるような、エチレン及び（メタ）アクリル酸を重合体の構成成分とする２元共重合体を金属イオンで架橋したアイオノマー樹脂からなる基材フィルムが、柔軟性には乏しいものの、ダイシング特性、エキスパンド性、耐熱性及び成形性に優れることを見出した。
そして、本発明者等は、前記２元共重合体のアイオノマー樹脂の優れた性能を維持したまま、柔軟性を付与し得る基材フィルムの構成につき鋭意検討した結果、前記２元共重合体のアイオノマー樹脂に、特定の構成成分から構成される３元共重合体を特定の割合で添加することにより、柔軟性が改善でき、結果として、該２成分を含む基材フィルムが、ダイシング特性、エキスパンド性、柔軟性、耐熱性及び成形性に優れる基材フィルムとなることを見出し、本発明を完成させた。 The inventors of the present invention, for example, a binary copolymer having ethylene and (meth) acrylic acid as a constituent component of the polymer as described in Reference 2 (which differs from the present invention in its use and purpose) It has been found that a base film made of an ionomer resin crosslinked with a metal ion is excellent in dicing characteristics, expandability, heat resistance and moldability, although it is poor in flexibility.
And as a result of earnestly examining the constitution of the base film capable of imparting flexibility while maintaining the excellent performance of the ionomer resin of the binary copolymer, the present inventors have found that the binary copolymer Flexibility can be improved by adding a terpolymer composed of specific components to the ionomer resin at a specific ratio. As a result, the base film containing the two components has dicing characteristics, expanded The present invention has been completed by finding that the substrate film is excellent in properties, flexibility, heat resistance and moldability.

即ち、本発明は、
（１）半導体製造工程用テープの基材フィルムであって、
Ａ）エチレン及び（メタ）アクリル酸を重合体の構成成分とする２元共重合体を金属イオ
ンで架橋したアイオノマー樹脂、並びに
Ｂ）エチレン、（メタ）アクリル酸及び（メタ）アクリル酸アルキルエステルを重合体の構成成分とする３元共重合体
を含むものからなり、前記成分Ｂ）の使用量が、成分Ａ）＋Ｂ）の総量に基づき、５質量％以上であり且つ５０質量％以下の範囲である基材フィルム、
（２）前記成分Ａ）に使用される金属イオンが亜鉛イオンである前記（１）記載の基材フィルム、
（３）前記成分Ａ）、Ｂ）に加え、ポリエーテル系高分子型帯電防止剤を、成分Ａ）＋Ｂ）の総量に基づき、１ないし２０質量％となる量で含む前記（１）又は（２）記載の基材フィルム、
（４）粘着剤層が形成される面とは反対側の面の平均表面粗さ（Ｒａ）が０．５ないし２μｍである前記（１）ないし（３）の何れか１つに記載の基材フィルム、
（５）照射線量１０ないし３００ＫＧｙで電子線が照射された前記（１）ないし（４）の何れか１つに記載の基材フィルム、
に関する。
That is, the present invention
(1) A base film for a tape for semiconductor manufacturing process,
A) an ionomer resin obtained by crosslinking a binary copolymer containing ethylene and (meth) acrylic acid as a polymer component with a metal ion; and B) ethylene, (meth) acrylic acid and (meth) acrylic acid alkyl ester. It comprises a ternary copolymer as a constituent component of the polymer, and the amount of the component B) used is in the range of 5% by mass or more and 50% by mass or less based on the total amount of the components A) + B). A base film,
(2) The substrate film according to (1), wherein the metal ion used in component A) is zinc ion ,
(3) the components A), in addition to B), polyether-based polymeric antistatic agent, based on the total amount of the components A) + B), wherein in an amount of 1 to a 20 wt% (1) or ( 2) Symbol mounting of the base film,
( 4 ) The group according to any one of (1) to ( 3 ), wherein the average surface roughness (Ra) of the surface opposite to the surface on which the pressure-sensitive adhesive layer is formed is 0.5 to 2 μm. Material film,
( 5 ) The base film according to any one of (1) to ( 4 ), wherein the electron beam is irradiated at an irradiation dose of 10 to 300 KGy,
About.

本発明により、ダイシング特性、エキスパンド性、柔軟性、耐熱性及び成形性に優れる
半導体製造工程用テープの基材フィルムが提供される。
加えて、本発明の半導体製造工程用テープの基材フィルムは、汎用の樹脂を使用するものであるため、コスト的にも有利である。
そのため、本発明の半導体製造工程用テープの基材フィルムは、精密電気部品の保護や半導体製造工程に使用する粘着テープなどの基材フィルムとしても、有利に使用することができる。
また、本発明の基材フィルムは、ポリエーテル系高分子型帯電防止剤を添加することにより、帯電防止機能を付与することができ、また、特定の照射線量で電子線を照射することにより、耐熱性を向上させることもできる。 By this invention, the base film of the tape for semiconductor manufacturing processes which is excellent in a dicing characteristic, expandability, a softness | flexibility, heat resistance, and a moldability is provided.
In addition, since the base film of the tape for semiconductor manufacturing process of the present invention uses a general-purpose resin, it is advantageous in terms of cost.
Therefore, the base film of the semiconductor manufacturing process tape of the present invention can be advantageously used as a base film such as a pressure sensitive adhesive tape used for the protection of precision electrical components and the semiconductor manufacturing process.
Moreover, the base film of the present invention can be provided with an antistatic function by adding a polyether polymer antistatic agent, and by irradiating an electron beam with a specific irradiation dose, Heat resistance can also be improved.

更に詳細に本発明を説明する。
本発明の、半導体製造工程用テープの基材フィルムは、
Ａ）エチレン及び（メタ）アクリル酸を重合体の構成成分とする２元共重合体を金属イオンで架橋したアイオノマー樹脂、並びに
Ｂ）エチレン、（メタ）アクリル酸及び（メタ）アクリル酸アルキルエステルを重合体の構成成分とする３元共重合体
を含むものからなり、前記成分Ｂ）の使用量が、成分Ａ）＋Ｂ）の総量に基づき、５質量％以上であり且つ５０質量％以下の範囲となるものである。 The present invention will be described in more detail.
The base film of the tape for semiconductor manufacturing process of the present invention is
A) an ionomer resin obtained by crosslinking a binary copolymer containing ethylene and (meth) acrylic acid as a polymer component with a metal ion; and B) ethylene, (meth) acrylic acid and (meth) acrylic acid alkyl ester. It comprises a ternary copolymer as a constituent component of the polymer, and the amount of the component B) used is in the range of 5% by mass or more and 50% by mass or less based on the total amount of the components A) + B). It will be.

成分Ａ）のアイオノマー樹脂に使用可能な金属イオンとしては、カリウムイオン（Ｋ+）、ナトリウムイオン（Ｎａ+）、リチウムイオン（Ｌｉ+）、マグネシウムイオン（Ｍｇ++）、亜鉛イオン（Ｚｎ++）等が挙げられるが、この中で、亜鉛イオン（Ｚｎ++）は、架橋構造を安定化させ、それにより、ダイシング屑を出難くするという点で好ましい。尚、２元共重合体のカルボキシル基における陽イオンによる中和度は、好ましくは４０〜７５ｍｏｌ％である。
また、成分Ａ）のアイオノマー樹脂の粘度（ＭＦＲ）は、測定法としてＪＩＳ Ｋ ７２１０を用いた場合、５．５ｋｇ／１０分以下であるのが好ましく、例えば、０．５ないし５．５ｋｇ／１０分の範囲であるのが好ましい。
また、成分Ａ）における２元共重合体の酸含有量は、測定方法としてＦＴ−ＩＲ法を用いた場合に、３ないし１２質量％となる量が好ましい。
成分Ａ）のエチレン及び（メタ）アクリル酸を重合体の構成成分とする２元共重合体を金属イオンで架橋したアイオノマー樹脂は、合成することにより得られるものを使用してもよいが、市販のものを用いることもできる。
本発明に使用し得る市販の成分Ａ）のアイオノマー樹脂としては、ハイミラン（登録商標） １６５０、１６０１、ＭＫ−４００、１７０５、１７０６（三井・デュポンポリケミカル社製）等が挙げられる。 Metal ions usable for the ionomer resin of component A) include potassium ions (K + ), sodium ions (Na + ), lithium ions (Li + ), magnesium ions (Mg ++ ), zinc ions (Zn ++ ). Among these, zinc ions (Zn ++ ) are preferable in that they stabilize the cross-linked structure and thereby make it difficult to produce dicing waste. In addition, the neutralization degree by the cation in the carboxyl group of the binary copolymer is preferably 40 to 75 mol%.
The viscosity (MFR) of the ionomer resin of component A) is preferably 5.5 kg / 10 min or less when JIS K 7210 is used as the measuring method, for example, 0.5 to 5.5 kg / 10. A range of minutes is preferred.
In addition, the acid content of the binary copolymer in component A) is preferably 3 to 12% by mass when the FT-IR method is used as the measurement method.
An ionomer resin obtained by cross-linking a binary copolymer having component A) ethylene and (meth) acrylic acid as a constituent component of a polymer with a metal ion may be obtained by synthesis. Can also be used.
Examples of commercially available ionomer resins of component A) that can be used in the present invention include Himiran (registered trademark) 1650, 1601, MK-400, 1705, and 1706 (manufactured by Mitsui DuPont Polychemical Co., Ltd.).

成分Ｂ）の３元共重合体における、好ましいエチレン成分の含有量は、３元共重合体の質量に基づき、５０〜９０質量％の範囲であり、好ましい（メタ）アクリル酸成分の含有量は、３元共重合体の質量に基づき、５〜２０質量％の範囲であり、好ましい（メタ）アクリル酸アルキルエステル成分の含有量は、３元共重合体の質量に基づき、５〜３０質量％の範囲である。
また、成分Ｂ）の３元共重合体における酸含有量は、測定方法としてＦＴ−ＩＲ法を用いた場合に、３ないし１４質量％となる量が好ましい。
また、成分Ｂ）の３元共重合体の粘度（ＭＦＲ）は、測定法としてＪＩＳ Ｋ ７２１０を用いた場合、例えば、５ｋｇ／１０分ないし１５ｋｇ／１０分の範囲が挙げられ、８ないし１２ｋｇ／１０分の範囲であるのが好ましい。 The content of the preferable ethylene component in the ternary copolymer of component B) is in the range of 50 to 90% by mass based on the mass of the ternary copolymer, and the preferable content of the (meth) acrylic acid component is Based on the mass of the ternary copolymer, it is in the range of 5 to 20% by mass, and the preferred content of the (meth) acrylic acid alkyl ester component is 5 to 30% by mass based on the mass of the ternary copolymer. Range.
The acid content in the ternary copolymer of component B) is preferably 3 to 14% by mass when the FT-IR method is used as the measurement method.
The viscosity (MFR) of the ternary copolymer of component B) is, for example, in the range of 5 kg / 10 minutes to 15 kg / 10 minutes when JIS K 7210 is used as the measuring method, and is 8 to 12 kg / A range of 10 minutes is preferred.

成分Ｂ）の３元共重合体に使用し得る（メタ）アクリル酸アルキルエステルとしては、
炭素原子数が３以上８以下であるアルキルエステルが好ましく用いられ、具体的には、（メタ）アクリル酸プロピル、（メタ）アクリル酸ブチル、（メタ）アクリル酸ヘキシル、（メタ）アクリル酸オクチル、（メタ）アクリル酸２−メチルプロピル、（メタ）アクリル酸２−エチルプロピル、（メタ）アクリル酸２−メチルブチル、（メタ）アクリル酸２−エチルブチル、（メタ）アクリル酸２−メチルヘキシル、（メタ）アクリル酸２−エチルヘキシル、（メタ）アクリル酸１，２−ジメチルブチル等が挙げられる。
成分Ｂ）の３元共重合体は、合成することにより得られるものを使用してもよいが、市販のものを用いることもできる。
本発明に使用し得る市販の成分Ｂ）の３元共重合体としては、ニュクレル ＡＮ４２１３Ｃ、ＡＮ４２３１Ｃ、ＡＮ４２１７−３Ｃ（三井・デュポンポリケミカル社製）等が挙げられる。 As the (meth) acrylic acid alkyl ester that can be used in the ternary copolymer of component B),
An alkyl ester having 3 to 8 carbon atoms is preferably used. Specifically, propyl (meth) acrylate, butyl (meth) acrylate, hexyl (meth) acrylate, octyl (meth) acrylate, (Meth) acrylic acid 2-methylpropyl, (meth) acrylic acid 2-ethylpropyl, (meth) acrylic acid 2-methylbutyl, (meth) acrylic acid 2-ethylbutyl, (meth) acrylic acid 2-methylhexyl, (meta ) 2-ethylhexyl acrylate, 1,2-dimethylbutyl (meth) acrylate, and the like.
As the ternary copolymer of component B), those obtained by synthesis may be used, but commercially available ones may also be used.
Examples of commercially available ternary copolymers of component B) that can be used in the present invention include Nucrel AN4213C, AN4231C, AN4217-3C (manufactured by Mitsui DuPont Polychemical Co., Ltd.) and the like.

前記成分Ｂ）の使用量は、成分Ａ）＋Ｂ）の総量に基づき、５質量％以上であり且つ５０質量％以下の範囲である。
成分Ｂ）の使用量が、５質量％未満になると、成形された基材フィルムの柔軟性が乏しいものとなり、逆に、５０質量％を超えると、エキスパンド性が劣るため好ましくない。 The amount of component B) used is in the range of 5% by weight or more and 50% by weight or less based on the total amount of components A) + B).
When the amount of component B) used is less than 5% by mass, the formed base film is poor in flexibility. On the other hand, when it exceeds 50% by mass, the expandability is poor, which is not preferable.

本発明の基材フィルムは、帯電防止機能を付与するために、更に、ポリエーテル系高分子型帯電防止剤を添加することができる。
ポリエーテル系高分子型帯電防止剤としては、ポリエチレンオキシド、ポリエーテルアミド、ポリエーテルエステルアミド、ポリエーテルアミドイミド、エチレンオキシド−エピハロヒドリン共重合体、メトキシポリエチレングリコール（メタ）アクリレート共重合体などであり、例えば、日本ゼオン（株）のゼオスパンや、三洋化成（株）のペレスタットなどが挙げられる。
ポリエーテル系高分子型帯電防止剤を使用する場合の配合量は、使用するポリエーテル系高分子型帯電防止剤の種類により異なるが、成分Ａ）＋Ｂ）の総量に基づき、１ないし２０質量％となる量とするのがよい。
ポリエーテル系高分子型帯電防止剤の配合量が１質量％未満であると所望の帯電防止効果を確保することができず、また２０質量％を超えて添加しても、それ以上の帯電防止効果が得られず、かえってコスト高となる。 In order to impart an antistatic function to the base film of the present invention, a polyether polymer type antistatic agent can be further added.
Examples of polyether polymer antistatic agents include polyethylene oxide, polyether amide, polyether ester amide, polyether amide imide, ethylene oxide-epihalohydrin copolymer, methoxy polyethylene glycol (meth) acrylate copolymer, Examples include Zeospan of Nippon Zeon Co., Ltd. and Perestat of Sanyo Kasei Co., Ltd.
The blending amount when the polyether polymer type antistatic agent is used varies depending on the kind of the polyether polymer type antistatic agent used, but is 1 to 20% by mass based on the total amount of components A) + B). It is good to make it an amount.
If the blending amount of the polyether polymer type antistatic agent is less than 1% by mass, the desired antistatic effect cannot be ensured, and even if it is added in excess of 20% by mass, further antistatic effect is achieved. The effect is not obtained, and the cost is rather high.

基材フィルムの成形は、フィルム形成に用いる慣用の方法を採用することができ、例えば、成分Ａ）、Ｂ）及び必要により他の成分を加え、押出機を使用して押出加工することにより、基材フィルムを製造することができる。
製造する基材フィルムの厚さとしては、通常３０〜３００μｍの範囲を採用することができ、好ましくは５０〜２００μｍの範囲である。
上記においては、粘着剤層が形成される面とは反対側の面の平均表面粗さ（Ｒａ）が０．５ないし２μｍとなるように基材フィルムを形成するのが好ましい。
上記のような平均表面粗さを有することにより、ダイシング後のエキスパンド工程における基材フィルムの拡張を容易にすることができる。 For forming the base film, a conventional method used for film formation can be adopted. For example, by adding components A) and B) and other components as necessary, and extruding using an extruder, A substrate film can be produced.
As thickness of the base film to manufacture, the range of 30-300 micrometers can be employ | adopted normally, Preferably it is the range of 50-200 micrometers.
In the above, it is preferable to form the base film so that the average surface roughness (Ra) of the surface opposite to the surface on which the pressure-sensitive adhesive layer is formed is 0.5 to 2 μm.
By having the above average surface roughness, it is possible to facilitate the expansion of the base film in the expanding step after dicing.

本発明の基材フィルムはまた、上記で成形したフィルムに電子線を照射することにより、更に耐熱性を向上させることもできる。
電子線の照射条件としては、加速電圧１５０〜３００ｍＶ、電子流４５０〜５００ｍＡにおいて、照射線量１０ないし３００ＫＧｙとするのが好ましい。
照射量が１０ＫＧｙ未満であると、照射効果が得られず、照射量が３００ＫＧｙを超えると、基材フィルムの柔軟性が低下すると共に、基材フィルム自体が劣化してしまい好ましくない。 The base film of the present invention can further improve heat resistance by irradiating the film formed above with an electron beam.
The electron beam irradiation conditions are preferably an irradiation dose of 10 to 300 KGy at an acceleration voltage of 150 to 300 mV and an electron current of 450 to 500 mA.
When the irradiation amount is less than 10 KGy, the irradiation effect cannot be obtained, and when the irradiation amount exceeds 300 KGy, the flexibility of the base film is lowered and the base film itself is deteriorated.

尚、半導体製造工程用テープは、本発明の基材フィルムの上面に粘着剤層を形成するこ
とにより製造することができる。
粘着剤層を構成する粘着剤としては、特に制限はなく、従来公知の粘着剤の中から適宜選択して用いることができる。例えば天然ゴムや合成ゴム等を用いたゴム系粘着剤、ポリ（メタ）アクリル酸アルキルエステルや（メタ）アクリル酸アルキルエステルと他のモノマーとの共重合体等を用いたアクリル系粘着剤、その他ポリウレタン系粘着剤やポリエステル系粘着剤やポリカーボネート系粘着剤などの適宜な粘着剤を用いることができ、紫外線等のエネルギー線で硬化処理するようにしたものなどであってもよい。
粘着剤層の形成は、既知の形成方法、例えば、粘着剤を塗布又は印刷することにより達成することができる。
粘着剤層の厚さは８〜３５μｍとすることが好ましく、より好ましくは１０〜２５μｍ程度である。 In addition, the tape for semiconductor manufacturing processes can be manufactured by forming an adhesive layer on the upper surface of the base film of the present invention.
There is no restriction | limiting in particular as an adhesive which comprises an adhesive layer, It can select suitably from conventionally well-known adhesives and can use it. For example, rubber adhesive using natural rubber or synthetic rubber, acrylic adhesive using poly (meth) acrylic acid alkyl ester or copolymer of (meth) acrylic acid alkyl ester and other monomers, etc. An appropriate pressure-sensitive adhesive such as a polyurethane-based pressure-sensitive adhesive, a polyester-based pressure-sensitive adhesive, or a polycarbonate-based pressure-sensitive adhesive can be used, and it may be one that is cured by energy rays such as ultraviolet rays.
Formation of the pressure-sensitive adhesive layer can be achieved by a known forming method, for example, by applying or printing a pressure-sensitive adhesive.
The thickness of the pressure-sensitive adhesive layer is preferably 8 to 35 μm, more preferably about 10 to 25 μm.

上記のようにして製造された半導体製造工程用テープの基材フィルムは、半導体製造工程用テープに使用した際、優れたダイシング特性、エキスパンド性、柔軟性、耐熱性及び成形性を奏するものであり、また、汎用の樹脂を使用し、容易に製造できるものであるため、経済性にも優れている。
以上のことから、本発明の基材フィルムは、精密電気部品の保護や半導体製造工程に使用する粘着テープなどの基材フィルムとしての使用において非常に有利なものといえる。 The base film of the semiconductor manufacturing process tape manufactured as described above exhibits excellent dicing properties, expandability, flexibility, heat resistance, and moldability when used in a semiconductor manufacturing process tape. Moreover, since it can be easily manufactured using a general-purpose resin, it is excellent in economic efficiency.
From the above, it can be said that the base film of the present invention is very advantageous in use as a base film such as pressure-sensitive adhesive tape used in the protection of precision electrical parts and semiconductor manufacturing processes.

次に、本発明を実施例により更に詳細に説明するが、本発明は実施例に限定されるものではない。
＜基材フィルムの製造＞
実施例１
酸含有量１２質量％、ＭＦＲ１．５、融点９６℃のエチレン−メタクリル酸２元共重合体−Ｚｎ++−アイオノマー樹脂（陽イオンによる中和度７０ｍｏｌ％）（三井・デュポンポリケミカル社製、ハイミラン１６５０）８０質量部と、酸含有量１１質量％、ＭＦＲ１０、融点８８℃のエチレン−メタクリル酸−（アクリル酸２−メチル−プロピル）３元共重合体樹脂（三井・デュポンポリケミカル社製、ニュクレルＡＮ４２１３Ｃ）２０質量部との２成分の混合物を、押出機を使用して厚さ１００μｍの基材フィルムを製造した。 EXAMPLES Next, although an Example demonstrates this invention still in detail, this invention is not limited to an Example.
<Manufacture of base film>
Example 1
Ethylene-methacrylic acid binary copolymer with an acid content of 12% by mass, MFR 1.5, melting point 96 ° C.-Zn ++ -ionomer resin (degree of neutralization by cation 70 mol%) (Mitsui / DuPont Polychemical Co., Ltd., Himiran 1650) 80 parts by mass, an acid content of 11% by mass, MFR10, an ethylene-methacrylic acid- (2-methyl-propyl acrylate) terpolymer resin having a melting point of 88 ° C. (Mitsui / DuPont Polychemical Co., Ltd.) A base film having a thickness of 100 μm was manufactured using a two-component mixture with Nukurel AN4213C) 20 parts by mass using an extruder.

実施例２
上記２元共重合体のアイオノマー樹脂（ハイミラン１６５０）の使用量を７０質量部とし、上記３元共重合体樹脂（ニュクレルＡＮ４２１３Ｃ）の使用量を３０質量部とした以外は、実施例１と同様にして基材フィルムを製造した。 Example 2
Example 1 except that the amount of the ionomer resin (Himiran 1650) used as the binary copolymer is 70 parts by mass and the amount of the terpolymer resin (Nucrel AN4213C) used is 30 parts by mass. Thus, a base film was produced.

実施例３
上記２元共重合体のアイオノマー樹脂（ハイミラン１６５０）の使用量を９５質量部とし、上記３元共重合体樹脂（ニュクレルＡＮ４２１３Ｃ）の使用量を５質量部とした以外は、実施例１と同様にして基材フィルムを製造した。 Example 3
Example 1 except that the amount of the ionomer resin (Himiran 1650) used for the binary copolymer is 95 parts by mass and the amount of the terpolymer resin (Nucleel AN4213C) used is 5 parts by mass. Thus, a base film was produced.

実施例４
上記２元共重合体のアイオノマー樹脂（ハイミラン１６５０）の使用量を５０質量部とし、上記３元共重合体樹脂（ニュクレルＡＮ４２１３Ｃ）の使用量を５０質量部とした以外は、実施例１と同様にして基材フィルムを製造した。 Example 4
Example 1 except that the amount of the ionomer resin (Himiran 1650) used as the binary copolymer was 50 parts by mass and the amount of the terpolymer resin (Nucleel AN4213C) used was 50 parts by mass. Thus, a base film was produced.

実施例５
上記２元共重合体のアイオノマー樹脂（ハイミラン１６５０）の代わりに、酸含有量１０質量％、ＭＦＲ１．３、融点９７℃のエチレン−メタクリル酸２元共重合体−Ｎａ+−アイオノマー樹脂（陽イオンによる中和度５０ｍｏｌ％）（三井・デュポンポリケミカル
社製、ハイミラン１６０１）を用いた以外は、実施例１と同様にして基材フィルムを製造した。 Example 5
Instead of the above binary copolymer ionomer resin (Himiran 1650), an ethylene-methacrylic acid binary copolymer-Na + -ionomer resin (cation) having an acid content of 10% by mass, MFR 1.3, and a melting point of 97 ° C. The base film was produced in the same manner as in Example 1 except that the neutralization degree was 50 mol% (by Mitsui DuPont Polychemical Co., Ltd., Himiran 1601).

実施例６
上記２元共重合体のアイオノマー樹脂（ハイミラン１６５０）の代わりに、エチレン−メタクリル酸２元共重合体−Ｋ+−アイオノマー樹脂（三井・デュポンポリケミカル社製、ハイミランＭＫ４００）を用いた以外は、実施例１と同様にして基材フィルムを製造した。 Example 6
Except for using the binary copolymer ionomer resin (Himiran 1650), ethylene-methacrylic acid binary copolymer-K + -ionomer resin (Mitsui / DuPont Polychemical Co., Ltd., Himiran MK400) was used. A base film was produced in the same manner as in Example 1.

実施例７
上記２元共重合体のアイオノマー樹脂（ハイミラン１６５０）の代わりに、酸含有量１５質量％、ＭＦＲ０．９、融点８８℃のエチレン−メタクリル酸２元共重合体−Ｚｎ++−アイオノマー樹脂（陽イオンによる中和度６０ｍｏｌ％）（三井・デュポンポリケミカル社製、ハイミラン１７０６）を使用した以外は、実施例１と同様にして基材フィルムを製造した。 Example 7
Instead of the above binary copolymer ionomer resin (Himiran 1650), an ethylene-methacrylic acid binary copolymer-Zn ++ -ionomer resin having an acid content of 15% by mass, MFR of 0.9, and a melting point of 88 ° C. A base film was produced in the same manner as in Example 1 except that neutralization degree by ions (60 mol%) (Mitsui DuPont Polychemical Co., Ltd., Himiran 1706) was used.

実施例８
上記３元共重合体樹脂（ニュクレルＡＮ４２１３Ｃ）の代わりに、酸含有量１２質量％、ＭＦＲ１０、融点９６℃のエチレン−メタクリル酸−（アクリル酸２−メチル−プロピル）３元共重合体樹脂（三井・デュポンポリケミカル社製、ニュクレルＡＮ４２３１Ｃ）を使用した以外は、実施例１と同様にして基材フィルムを製造した。 Example 8
Instead of the above terpolymer resin (Nucleel AN4213C), an ethylene-methacrylic acid (2-methyl-propyl acrylate) terpolymer resin having an acid content of 12% by mass, MFR of 10, and a melting point of 96 ° C. (Mitsui A base film was produced in the same manner as in Example 1 except that Nucleel AN4231C) manufactured by DuPont Polychemical Co. was used.

比較例１
上記３元共重合体樹脂（ニュクレルＡＮ４２１３Ｃ）を使用しなかった以外は、実施例１と同様にして基材フィルムを製造した。 Comparative Example 1
A base film was produced in the same manner as in Example 1 except that the above terpolymer resin (Nucleel AN4213C) was not used.

比較例２
上記２元共重合体のアイオノマー樹脂（ハイミラン１６５０）の使用量を４０質量部とし、上記３元共重合体樹脂（ニュクレルＡＮ４２１３Ｃ）の使用量を６０質量部とした以外は、実施例１と同様にして基材フィルムを製造した。 Comparative Example 2
Example 1 except that the amount of the ionomer resin (Himiran 1650) used as the binary copolymer is 40 parts by mass and the amount of the terpolymer resin (Nucrel AN4213C) used is 60 parts by mass. Thus, a base film was produced.

比較例３
上記３元共重合体樹脂（ニュクレルＡＮ４２１３Ｃ）の代わりに、酸含有量９質量％、ＭＦＲ３、融点９９℃のエチレン−メタクリル酸２元共重合体樹脂（三井・デュポンポリケミカル社製、ニュクレルＮ０９０３Ｃ）を使用した以外は、実施例１と同様にして基材フィルムを製造した。 Comparative Example 3
In place of the above terpolymer resin (Nucrel AN4213C), an ethylene-methacrylic acid binary copolymer resin having an acid content of 9% by mass, MFR3, and a melting point of 99 ° C. A base film was produced in the same manner as in Example 1 except that was used.

比較例４
上記２元共重合体のアイオノマー樹脂（ハイミラン１６５０）の代わりに、酸含有量１０質量％、ＭＦＲ１．０、融点８６℃のエチレン−メタクリル酸−（アクリル酸２−メチル−プロピル）３元共重合体−Ｚｎ++−アイオノマー樹脂（陽イオンによる中和度６０ｍｏｌ％）（三井・デュポンポリケミカル社製、ハイミラン１８５５）を使用した以外は、実施例１と同様にして基材フィルムを製造した。 Comparative Example 4
Instead of the above binary copolymer ionomer resin (Himiran 1650), ethylene-methacrylic acid (2-methyl-propyl acrylate) terpolymer having an acid content of 10% by mass, MFR of 1.0, and a melting point of 86 ° C. A base film was produced in the same manner as in Example 1 except that a coalescence-Zn ++ -ionomer resin (degree of neutralization by cation 60 mol%) (Mitsui / DuPont Polychemical Co., Ltd., Himiran 1855) was used.

試験例１
実施例１〜８及び比較例１〜４で製造した基材フィルムのダイシング特性、エキスパンド性、柔軟性、耐熱性及び成形性を評価して表１に示した。
尚、評価方法及び評価基準は以下に示した通りである。
また、表１中の、ＡないしＨは、以下の樹脂を意味する。
Ａ：酸含有量１２質量％、ＭＦＲ１．５、融点９６℃のエチレン−メタクリル酸２元共重
合体−Ｚｎ++−アイオノマー樹脂（陽イオンによる中和度７０ｍｏｌ％）（三井・デュポンポリケミカル社製、ハイミラン１６５０）
Ｂ：酸含有量１０質量％、ＭＦＲ１．３、融点９７℃のエチレン−メタクリル酸２元共重合体−Ｎａ+−アイオノマー樹脂（陽イオンによる中和度５０ｍｏｌ％）（三井・デュポンポリケミカル社製、ハイミラン１６０１）
Ｃ：エチレン−メタクリル酸２元共重合体−Ｋ+−アイオノマー樹脂（三井・デュポンポリケミカル社製、ハイミランＭＫ４００）
Ｄ：酸含有量１５質量％、ＭＦＲ０．９、融点８８℃のエチレン−メタクリル酸２元共重合体−Ｚｎ++−アイオノマー樹脂（陽イオンによる中和度６０ｍｏｌ％）（三井・デュポンポリケミカル社製、ハイミラン１７０６）
Ｅ：酸含有量１０質量％、ＭＦＲ１．０、融点８６℃のエチレン−メタクリル酸−（アクリル酸２−メチル−プロピル）３元共重合体−Ｚｎ++−アイオノマー樹脂（陽イオンによる中和度６０ｍｏｌ％）（三井・デュポンポリケミカル社製、ハイミラン１８５５）
Ｆ：酸含有量１１質量％、ＭＦＲ１０、融点８８℃のエチレン−メタクリル酸−（アクリル酸２−メチル−プロピル）３元共重合体樹脂（三井・デュポンポリケミカル社製、ニュクレルＡＮ４２１３Ｃ）
Ｇ：酸含有量１２質量％、ＭＦＲ１０、融点９６℃のエチレン−メタクリル酸−（アクリル酸２−メチル−プロピル）３元共重合体樹脂（三井・デュポンポリケミカル社製、ニュクレルＡＮ４２３１Ｃ）
Ｈ：酸含有量９質量％、ＭＦＲ３、融点９９℃のエチレン−メタクリル酸２元共重合体樹脂（三井・デュポンポリケミカル社製、ニュクレルＮ０９０３Ｃ） Test example 1
Table 1 shows the dicing properties, expandability, flexibility, heat resistance, and moldability of the base films produced in Examples 1 to 8 and Comparative Examples 1 to 4.
The evaluation method and evaluation criteria are as shown below.
Further, A to H in Table 1 mean the following resins.
A: Ethylene-methacrylic acid binary copolymer having an acid content of 12% by mass, MFR 1.5, melting point of 96 ° C.-Zn ++ -ionomer resin (degree of neutralization by cation 70 mol%) (Mitsui / Dupont Polychemical Co., Ltd.) Manufactured by High Milan 1650)
B: Ethylene-methacrylic acid binary copolymer-Na + -ionomer resin (acid neutralization degree 50 mol%) having an acid content of 10% by mass, MFR 1.3, and a melting point of 97 ° C. (Mitsui / DuPont Polychemicals) , High Milan 1601)
C: Ethylene-methacrylic acid binary copolymer-K + -ionomer resin (Mitsui / DuPont Polychemical Co., Ltd., High Milan MK400)
D: ethylene-methacrylic acid binary copolymer having an acid content of 15% by mass, MFR of 0.9, and a melting point of 88 ° C.-Zn ++ -ionomer resin (degree of neutralization by cation 60 mol%) (Mitsui / Dupont Polychemical Co., Ltd.) Manufactured by High Milan 1706)
E: ethylene-methacrylic acid- (acrylic acid 2-methyl-propyl) terpolymer having an acid content of 10% by mass, MFR of 1.0, and a melting point of 86 ° C.—Zn ++ -ionomer resin (degree of neutralization by cation) (60 mol%) (Mitsui, DuPont Polychemicals, High Milan 1855)
F: Ethylene-methacrylic acid- (acrylic acid 2-methyl-propyl) terpolymer resin having an acid content of 11% by mass, MFR of 10, and a melting point of 88 ° C. (Mitsui / Dupont Polychemical Co., Ltd., Nucrel AN4213C)
G: Ethylene-methacrylic acid- (2-methyl-propyl acrylate) terpolymer resin having an acid content of 12% by mass, MFR of 10, and a melting point of 96 ° C. (Mitsui / DuPont Polychemical Co., Ltd., Nucrel AN4231C)
H: Ethylene-methacrylic acid binary copolymer resin having an acid content of 9% by mass, MFR3, and a melting point of 99 ° C. (Mitsui / DuPont Polychemical Co., Ltd. Nucrel N0903C)

評価方法・評価基準
＜ダイシング特性＞
ダイシングブレードを使用し、回転数４５０００ｒｐｍ、カットスピード１００ｍ／秒で裁断した際の切削屑の有無を評価した。
・切削屑無し ○
・長さ１００μｍ未満の切削屑が有り △
・長さ１００μｍ以上の切削屑が有り ×
＜エキスパンド性＞
２５％延伸時における縦と横の荷重の比を測定した。
・縦と横の荷重の比（ＴＤ／ＭＤ）が８０〜１００％の範囲内 ○
・縦と横の荷重の比（ＴＤ／ＭＤ）が６０〜８０％未満 △
・縦と横の荷重の比（ＴＤ／ＭＤ）が６０％未満 ×
＜柔軟性＞
ＪＩＳ Ｋ ６７３２に準じて試験をおこなった。
・２５％延伸時の応力が１５ＭＰａ未満 ○
・２５％延伸時の応力が１５ＭＰａ以上２５ＭＰａ未満 △
・２５％延伸時の応力が２５ＭＰａ以上 ×
＜耐熱性＞
幅１５ｍｍ×標線１０ｍｍ×５ｇ荷重で、１２０℃のオーブンに１５分間吊るして、状態を観察した。
・伸びきらなかった ○
・伸びきった ×
＜成形性＞
基材フィルム成形時におけるロール剥離性を評価した。
・良好なロール剥離性を示した ○
・良好なロール剥離性を示さなかった × Evaluation method and evaluation criteria <Dicing characteristics>
Using a dicing blade, the presence or absence of cutting waste when cutting at a rotational speed of 45000 rpm and a cutting speed of 100 m / sec was evaluated.
・ No cutting waste ○
・ There is cutting waste less than 100μm in length △
・ There is cutting waste with a length of 100μm or more ×
<Expandability>
The ratio of longitudinal and lateral loads at 25% stretching was measured.
・ The ratio of vertical and horizontal loads (TD / MD) is in the range of 80 to 100%.
・ Vertical and horizontal load ratio (TD / MD) is less than 60-80% △
・ Vertical and horizontal load ratio (TD / MD) is less than 60%.
<Flexibility>
The test was conducted according to JIS K 6732.
-Stress at 25% stretching is less than 15 MPa ○
-Stress at 25% stretching is 15 MPa or more and less than 25 MPa △
・ Stress at 25% stretching is 25 MPa or more ×
<Heat resistance>
The condition was observed by suspending in an oven at 120 ° C. for 15 minutes under a load of 15 mm width × 10 mm × 5 g marked line.
・ It did not fully grow ○
・ Fully extended ×
<Moldability>
The roll peelability at the time of forming the base film was evaluated.
・ Shows good roll peelability ○
・ Did not show good roll peelability ×

Figure 0005666875
Figure 0005666875

結果：
Ａ）エチレン−（メタ）アクリル酸２元共重合体のアイオノマー樹脂及び
Ｂ）エチレン−（メタ）アクリル酸−（メタ）アクリル酸アルキルエステル３元共重合体の２成分からなり、前記成分Ｂ）の使用量が、成分Ａ）＋Ｂ）の総量に基づき、５質量％以上であり且つ５０質量％以下の範囲である実施例１ないし４及び８の基材フィルムは、何れも、優れたダイシング特性、エキスパンド性、柔軟性、耐熱性及び成形性を示したが、架橋金属イオンがＮａ+であるアイオノマー樹脂を用いる実施例５及び架橋金属イオンがＫ+であるアイオノマー樹脂を用いる実施例６では、ダイシング特性が多少低下する傾向が観られ、また、架橋金属イオンがＺｎ++であるものの、酸含有量が１５質量％であるアイオノマー樹脂を用いる実施例７では、柔軟性が多少低下する傾向が観られた。
一方、成分Ｂ）エチレン−（メタ）アクリル酸−（メタ）アクリル酸アルキルエステル３元共重合体を用いなかった比較例１の基材フィルムは柔軟性が不十分であった。
また、上記成分Ｂ）の使用量が、５質量％以上であり且つ５０質量％以下の範囲外である、６０質量％となる比較例２の基材フィルムはエキスパンド性が不十分であった。
また、上記成分Ｂ）のエチレン−（メタ）アクリル酸−（メタ）アクリル酸アルキルエステル３元共重合体の代わりに、エチレン−メタクリル酸２元共重合体を用いた比較例３の基材フィルムは柔軟性が不十分であった。
また、成分Ａ）のエチレン−（メタ）アクリル酸２元共重合体のアイオノマー樹脂の代わりに、エチレン−（メタ）アクリル酸−（メタ）アクリル酸アルキルエステル３元共重合体のアイオノマー樹脂を用いた比較例４の基材フィルムは成形性が不十分であり、また、エキスパンド性も多少低下する傾向が観られた。 result:
The component B) comprises two components: A) an ionomer resin of ethylene- (meth) acrylic acid binary copolymer and B) ethylene- (meth) acrylic acid- (meth) acrylic acid alkyl ester terpolymer. The base film of Examples 1 to 4 and 8 in which the amount used is in the range of 5% by weight or more and 50% by weight or less based on the total amount of components A) + B) is excellent in dicing characteristics In Example 5 using an ionomer resin in which the crosslinking metal ion is Na + and in Example 6 using an ionomer resin in which the crosslinking metal ion is K + , which showed expandability, flexibility, heat resistance, and moldability, There was a tendency for the dicing properties to be somewhat reduced, and in Example 7 using an ionomer resin having an acid content of 15% by mass although the cross-linked metal ion was Zn ++ , the softness was flexible. There was a tendency for the sex to decline somewhat.
On the other hand, the base material film of Comparative Example 1 which did not use Component B) ethylene- (meth) acrylic acid- (meth) acrylic acid alkyl ester terpolymer had insufficient flexibility.
Moreover, the base film of Comparative Example 2 in which the amount of the component B) used is 60% by mass, which is 5% by mass or more and outside the range of 50% by mass or less, has insufficient expandability.
Moreover, the base material film of the comparative example 3 which used the ethylene-methacrylic acid binary copolymer instead of the ethylene- (meth) acrylic acid- (meth) acrylic acid alkylester ternary copolymer of the said component B) Was not flexible enough.
Also, an ionomer resin of ethylene- (meth) acrylic acid- (meth) acrylic acid alkyl ester terpolymer is used in place of the component A) ethylene- (meth) acrylic acid binary copolymer ionomer resin. The base film of Comparative Example 4 was insufficient in moldability, and the expandability was somewhat lowered.

Claims (5)

半導体製造工程用テープの基材フィルムであって、
Ａ）エチレン及び（メタ）アクリル酸を重合体の構成成分とする２元共重合体を金属イオンで架橋したアイオノマー樹脂、並びに
Ｂ）エチレン、（メタ）アクリル酸及び（メタ）アクリル酸アルキルエステルを重合体の構成成分とする３元共重合体
を含むものからなり、前記成分Ｂ）の使用量が、成分Ａ）＋Ｂ）の総量に基づき、５質量％以上であり且つ５０質量％以下の範囲である基材フィルム。 A base film for a tape for semiconductor manufacturing process,
A) an ionomer resin obtained by crosslinking a binary copolymer containing ethylene and (meth) acrylic acid as a polymer component with a metal ion; and B) ethylene, (meth) acrylic acid and (meth) acrylic acid alkyl ester. It comprises a ternary copolymer as a constituent component of the polymer, and the amount of the component B) used is in the range of 5% by mass or more and 50% by mass or less based on the total amount of the components A) + B). Is a base film. 前記成分Ａ）に使用される金属イオンが亜鉛イオンである請求項１記載の基材フィルム。 2. A substrate film according to claim 1, wherein the metal ion used in component A) is zinc ion. 前記成分Ａ）、Ｂ）に加え、ポリエーテル系高分子型帯電防止剤を、成分Ａ）＋Ｂ）の総量に基づき、１ないし２０質量％となる量で含む請求項１又は２記載の基材フィルム。 Said components A), B) was added, the polyether-based polymeric antistatic agent, based on the total amount of the components A) + B), according to claim 1 or 2 Symbol placement groups containing in an amount of 1 to 20 wt% Material film. 粘着剤層が形成される面とは反対側の面の平均表面粗さ（Ｒａ）が０．５ないし２μｍである請求項１ないし３の何れか１項に記載の基材フィルム。 The base film according to any one of claims 1 to 3 , wherein an average surface roughness (Ra) of a surface opposite to the surface on which the pressure-sensitive adhesive layer is formed is 0.5 to 2 µm. 照射線量１０ないし３００ＫＧｙで電子線が照射された請求項１ないし４の何れか１項に記載の基材フィルム。 The base film according to any one of claims 1 to 4 , which has been irradiated with an electron beam at an irradiation dose of 10 to 300 KGy.
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