TW201614100A - Metal organic chemical vapour deposition apparatus - Google Patents

Metal organic chemical vapour deposition apparatus

Info

Publication number
TW201614100A
TW201614100A TW104109655A TW104109655A TW201614100A TW 201614100 A TW201614100 A TW 201614100A TW 104109655 A TW104109655 A TW 104109655A TW 104109655 A TW104109655 A TW 104109655A TW 201614100 A TW201614100 A TW 201614100A
Authority
TW
Taiwan
Prior art keywords
sealing unit
heater block
shaft
unit
deposition apparatus
Prior art date
Application number
TW104109655A
Other languages
Chinese (zh)
Other versions
TWI554642B (en
Inventor
Hee-Sung Roh
Min-Cheol Kim
Original Assignee
Tes Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tes Co Ltd filed Critical Tes Co Ltd
Publication of TW201614100A publication Critical patent/TW201614100A/en
Application granted granted Critical
Publication of TWI554642B publication Critical patent/TWI554642B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A metal organic chemical vapour deposition apparatus according to one embodiment of the invention includes: a heater block, disposed in a reaction space in a substrate accommodation chamber and supporting the substrate; an induction heating unit, heating the heater block; a shaft, connected to the heater block and rotating; a sealing unit, vacuum sealing a space between the substrate accommodation chamber and the shaft; a radiant heat blocking member, surrounding the shaft between the sealing unit and the heater block and blocking transmission of radiant heat of the heater block to the sealing unit; and a cooling unit, cooling the sealing unit so as to prevent heating of the sealing unit caused by the radiant heat. By means of a cooling gas, transmission of heat of the high-temperature heater block to the sealing unit via the rotating shaft is blocked. Moreover, magnetic fluid that exists in the sealing unit is prevented from evaporation, so that a malfunction of the sealing unit can be prevented in advance.
TW104109655A 2014-10-14 2015-03-26 Metal organic chemical vapour deposition apparatus TWI554642B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140138097A KR101627102B1 (en) 2014-10-14 2014-10-14 Metal organic chemical vapour deposition apparatus

Publications (2)

Publication Number Publication Date
TW201614100A true TW201614100A (en) 2016-04-16
TWI554642B TWI554642B (en) 2016-10-21

Family

ID=55918226

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104109655A TWI554642B (en) 2014-10-14 2015-03-26 Metal organic chemical vapour deposition apparatus

Country Status (2)

Country Link
KR (1) KR101627102B1 (en)
TW (1) TWI554642B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110616410B (en) * 2018-06-20 2024-02-27 中国科学院苏州纳米技术与纳米仿生研究所 Glancing angle deposition equipment and sample platform thereof
KR102500070B1 (en) * 2021-03-30 2023-02-15 주식회사 테스 Metal organic chemical vapor deposition apparatus
KR102564228B1 (en) * 2021-04-29 2023-08-09 주식회사 테스 Metal organic chemical vapor deposition apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000074227A (en) * 1998-08-26 2000-03-14 Sony Corp Vacuum processing device and magnetic seal rotary bearing unit
JP2002161362A (en) 2000-11-24 2002-06-04 Anelva Corp Joint and substrate rotation mechanism
KR20070047981A (en) * 2005-11-03 2007-05-08 삼성전자주식회사 Substrate processing device having cooling means for sealing means
KR101525892B1 (en) * 2008-09-05 2015-06-05 주성엔지니어링(주) Substrate processing apparatus
JP5665289B2 (en) * 2008-10-29 2015-02-04 株式会社日立国際電気 Semiconductor device manufacturing method, substrate processing method, and substrate processing apparatus
KR101297981B1 (en) * 2011-10-07 2013-08-23 (주) 예스티 Heat process chamber for substrate

Also Published As

Publication number Publication date
TWI554642B (en) 2016-10-21
KR101627102B1 (en) 2016-06-03
KR20160043675A (en) 2016-04-22

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