TW201614099A - Apparatus for MOCVD - Google Patents

Apparatus for MOCVD

Info

Publication number
TW201614099A
TW201614099A TW104111362A TW104111362A TW201614099A TW 201614099 A TW201614099 A TW 201614099A TW 104111362 A TW104111362 A TW 104111362A TW 104111362 A TW104111362 A TW 104111362A TW 201614099 A TW201614099 A TW 201614099A
Authority
TW
Taiwan
Prior art keywords
substrate
chamber
ascending
descending driving
loading
Prior art date
Application number
TW104111362A
Other languages
Chinese (zh)
Other versions
TWI567229B (en
Inventor
Kwang-Il Cho
Kyung-Ho Jang
Original Assignee
Tes Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tes Co Ltd filed Critical Tes Co Ltd
Publication of TW201614099A publication Critical patent/TW201614099A/en
Application granted granted Critical
Publication of TWI567229B publication Critical patent/TWI567229B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention relates to an apparatus for metal organic chemical vapor deposition (MOCVD), in which without opening or closing a chamber lid, a substrate can be loaded or unloaded in a chamber by ascending and descending driving of a substrate heating unit performed by an ascending and descending driving portion, and by a conveyance chamber and the ascending and descending driving portion. Thus, there is no need to switch a reactor from a vacuum state to an atmospheric state. The substrate can be loaded while a continuous manufacturing process is realized. There is no need to disassemble or assemble any parts for loading the substrate. In addition, under a high temperature inside the chamber, loading/unloading of the substrate becomes easier. During a replacement of a substrate or a shaft that is thermally deformed due to the high-temperature deposition process, levelling is easily performed.
TW104111362A 2014-10-13 2015-04-09 Apparatus for mocvd TWI567229B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140137953A KR101722915B1 (en) 2014-10-13 2014-10-13 Apparatus for mocvd

Publications (2)

Publication Number Publication Date
TW201614099A true TW201614099A (en) 2016-04-16
TWI567229B TWI567229B (en) 2017-01-21

Family

ID=55917978

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104111362A TWI567229B (en) 2014-10-13 2015-04-09 Apparatus for mocvd

Country Status (2)

Country Link
KR (1) KR101722915B1 (en)
TW (1) TWI567229B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102012015B1 (en) * 2017-11-29 2019-08-19 코스텍시스템(주) Vacuum maintaenance parts protecting apparatus of temporary bonding system
KR102564228B1 (en) * 2021-04-29 2023-08-09 주식회사 테스 Metal organic chemical vapor deposition apparatus
CN115305452B (en) * 2022-07-06 2023-09-08 北京北方华创微电子装备有限公司 Reaction chamber
CN115274430B (en) * 2022-07-19 2024-04-30 江苏晋誉达半导体股份有限公司 Silicon wafer continuous reaction cooling method of chemical vapor deposition equipment
CN115594168A (en) * 2022-10-29 2023-01-13 胡飞飞（Cn） Device for preparing graphene

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6902623B2 (en) * 2001-06-07 2005-06-07 Veeco Instruments Inc. Reactor having a movable shutter
CN1276125C (en) * 2004-04-20 2006-09-20 南昌大学 Wedge shaped reaction tube in use for equipment of metal organic chemical vapor deposition
KR101685150B1 (en) * 2011-01-14 2016-12-09 주식회사 원익아이피에스 Thin film deposition apparatus and substrate processing system comprising the same
KR101744372B1 (en) * 2011-01-20 2017-06-07 도쿄엘렉트론가부시키가이샤 Vacuum processing apparatus
KR101320330B1 (en) * 2011-11-03 2013-10-23 주식회사 테스 In-line type substrate processing system and loadlock chamber
KR101232597B1 (en) * 2011-11-09 2013-02-13 주식회사 테스 Substrate processing apparatus
KR101319823B1 (en) 2011-11-29 2013-10-23 주식회사 테스 Metal organic chemical vapor deposition apparatus
KR101356537B1 (en) * 2012-12-28 2014-01-29 주식회사 테스 Substrate processing apparatus

Also Published As

Publication number Publication date
TWI567229B (en) 2017-01-21
KR101722915B1 (en) 2017-04-04
KR20160043486A (en) 2016-04-21

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