SG10201901910YA - Inject insert for epi chamber - Google Patents

Inject insert for epi chamber

Info

Publication number
SG10201901910YA
SG10201901910YA SG10201901910YA SG10201901910YA SG10201901910YA SG 10201901910Y A SG10201901910Y A SG 10201901910YA SG 10201901910Y A SG10201901910Y A SG 10201901910YA SG 10201901910Y A SG10201901910Y A SG 10201901910YA SG 10201901910Y A SG10201901910Y A SG 10201901910YA
Authority
SG
Singapore
Prior art keywords
inject insert
processed
substrate
epi chamber
present
Prior art date
Application number
SG10201901910YA
Inventor
Shu-Kwan Lau
Mehmet Tugrul Samir
Aaron Miller
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10201901910YA publication Critical patent/SG10201901910YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Abstract

OF THE DISCLOSURE Embodiments of the present invention provide a liner assembly including an inject insert. The inject insert enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to embodiment of the present invention.
SG10201901910YA 2014-09-05 2015-08-13 Inject insert for epi chamber SG10201901910YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462046400P 2014-09-05 2014-09-05
US14/584,441 US10760161B2 (en) 2014-09-05 2014-12-29 Inject insert for EPI chamber

Publications (1)

Publication Number Publication Date
SG10201901910YA true SG10201901910YA (en) 2019-04-29

Family

ID=55436990

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201901910YA SG10201901910YA (en) 2014-09-05 2015-08-13 Inject insert for epi chamber
SG11201701462SA SG11201701462SA (en) 2014-09-05 2015-08-13 Inject insert for epi chamber

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201701462SA SG11201701462SA (en) 2014-09-05 2015-08-13 Inject insert for epi chamber

Country Status (6)

Country Link
US (1) US10760161B2 (en)
KR (1) KR102402504B1 (en)
CN (2) CN107574424B (en)
SG (2) SG10201901910YA (en)
TW (1) TWI674331B (en)
WO (1) WO2016036488A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102350588B1 (en) * 2015-07-07 2022-01-14 삼성전자 주식회사 Film forming apparatus having injector
US10607837B2 (en) 2016-08-19 2020-03-31 Applied Materials, Inc. Gas flow control for EPI thickness uniformity improvement
WO2018042876A1 (en) * 2016-09-05 2018-03-08 信越半導体株式会社 Vapor-phase growth apparatus and method for production of epitaxial wafer
US10665460B2 (en) * 2016-09-05 2020-05-26 Shin-Etsu Handotai Co., Ltd. Vapor phase growth apparatus, method of manufacturing epitaxial wafer, and attachment for vapor phase growth apparatus
SE544378C2 (en) * 2020-07-13 2022-04-26 Epiluvac Ab Device and method for achieving homogeneous growth and doping of semiconductor wafers with a diameter greater than 100 mm
KR102572439B1 (en) * 2022-12-05 2023-08-30 주식회사 피제이피테크 Epitaxial growth apparatus and multi-layer gas supply module used therefor

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6500734B2 (en) * 1993-07-30 2002-12-31 Applied Materials, Inc. Gas inlets for wafer processing chamber
US5551982A (en) * 1994-03-31 1996-09-03 Applied Materials, Inc. Semiconductor wafer process chamber with susceptor back coating
US6099648A (en) 1997-08-06 2000-08-08 Applied Materials, Inc. Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
US5914050A (en) 1997-09-22 1999-06-22 Applied Materials, Inc. Purged lower liner
US6129807A (en) 1997-10-06 2000-10-10 Applied Materials, Inc. Apparatus for monitoring processing of a substrate
JP4147608B2 (en) 1998-03-06 2008-09-10 東京エレクトロン株式会社 Heat treatment equipment
US6143079A (en) 1998-11-19 2000-11-07 Asm America, Inc. Compact process chamber for improved process uniformity
KR100360401B1 (en) 2000-03-17 2002-11-13 삼성전자 주식회사 Process tube having a slit type process gas injection portion and a waste gas exhaust portion of multi hole type and apparatus for semiconductor fabricating
JP2002075901A (en) 2000-08-31 2002-03-15 Tokyo Electron Ltd Annealer, plating system, and method of manufacturing semiconductor device
US6576565B1 (en) 2002-02-14 2003-06-10 Infineon Technologies, Ag RTCVD process and reactor for improved conformality and step-coverage
JP2005183511A (en) * 2003-12-17 2005-07-07 Shin Etsu Handotai Co Ltd Vapor phase growing apparatus and method of manufacturing epitaxial wafer
JP4841873B2 (en) 2005-06-23 2011-12-21 大日本スクリーン製造株式会社 Heat treatment susceptor and heat treatment apparatus
US7794667B2 (en) * 2005-10-19 2010-09-14 Moore Epitaxial, Inc. Gas ring and method of processing substrates
TW200802552A (en) 2006-03-30 2008-01-01 Sumco Techxiv Corp Method of manufacturing epitaxial silicon wafer and apparatus thereof
TW200809926A (en) * 2006-05-31 2008-02-16 Sumco Techxiv Corp Apparatus and method for depositing layer on substrate
US20080017116A1 (en) 2006-07-18 2008-01-24 Jeffrey Campbell Substrate support with adjustable lift and rotation mount
JP4973150B2 (en) 2006-11-27 2012-07-11 東京エレクトロン株式会社 Gas introduction mechanism and processing object processing object
US20080220150A1 (en) * 2007-03-05 2008-09-11 Applied Materials, Inc. Microbatch deposition chamber with radiant heating
US20090221149A1 (en) 2008-02-28 2009-09-03 Hammond Iv Edward P Multiple port gas injection system utilized in a semiconductor processing system
DE102008034260B4 (en) 2008-07-16 2014-06-26 Siltronic Ag Method for depositing a layer on a semiconductor wafer by means of CVD in a chamber and chamber for depositing a layer on a semiconductor wafer by means of CVD
JP5268766B2 (en) * 2009-04-23 2013-08-21 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Film forming reaction apparatus and film forming substrate manufacturing method
US9127360B2 (en) 2009-10-05 2015-09-08 Applied Materials, Inc. Epitaxial chamber with cross flow
US8869742B2 (en) 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US20120177846A1 (en) * 2011-01-07 2012-07-12 Applied Materials, Inc. Radical steam cvd
US8404048B2 (en) 2011-03-11 2013-03-26 Applied Materials, Inc. Off-angled heating of the underside of a substrate using a lamp assembly
WO2012128783A1 (en) 2011-03-22 2012-09-27 Applied Materials, Inc. Liner assembly for chemical vapor deposition chamber
US20120270384A1 (en) 2011-04-22 2012-10-25 Applied Materials, Inc. Apparatus for deposition of materials on a substrate
US9512520B2 (en) * 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
KR101170596B1 (en) 2012-03-06 2012-08-02 주성엔지니어링(주) Gas injection apparatus
WO2013162972A1 (en) 2012-04-25 2013-10-31 Applied Materials, Inc. Process chamber having separate process gas and purge gas regions
US20140137801A1 (en) 2012-10-26 2014-05-22 Applied Materials, Inc. Epitaxial chamber with customizable flow injection
CN104822866B (en) * 2012-11-27 2017-09-01 索泰克公司 Depositing system and related method with interchangeable gas ejector
SG11201504342SA (en) 2013-01-16 2015-08-28 Applied Materials Inc Quartz upper and lower domes
US10344380B2 (en) * 2013-02-11 2019-07-09 Globalwafers Co., Ltd. Liner assemblies for substrate processing systems
US20140224175A1 (en) * 2013-02-14 2014-08-14 Memc Electronic Materials, Inc. Gas distribution manifold system for chemical vapor deposition reactors and method of use
US9117670B2 (en) * 2013-03-14 2015-08-25 Sunedison Semiconductor Limited (Uen201334164H) Inject insert liner assemblies for chemical vapor deposition systems and methods of using same
US9328420B2 (en) * 2013-03-14 2016-05-03 Sunedison Semiconductor Limited (Uen201334164H) Gas distribution plate for chemical vapor deposition systems and methods of using same

Also Published As

Publication number Publication date
CN107574424B (en) 2019-10-25
TWI674331B (en) 2019-10-11
US10760161B2 (en) 2020-09-01
KR20170048562A (en) 2017-05-08
KR102402504B1 (en) 2022-05-25
US20160068956A1 (en) 2016-03-10
CN106605287B (en) 2020-09-11
CN106605287A (en) 2017-04-26
CN107574424A (en) 2018-01-12
TW201610223A (en) 2016-03-16
WO2016036488A1 (en) 2016-03-10
SG11201701462SA (en) 2017-03-30

Similar Documents

Publication Publication Date Title
SG10201901910YA (en) Inject insert for epi chamber
EP3309442A4 (en) Fuel gas supply system
EP3094845A4 (en) Cooling systems for gas turbine engines
SG10201504689WA (en) Gas turbine engine assembly method and system
GB2553663B (en) An improved cooling arrangement for a combustion chamber assembly and a combustion chamber segment
GB201704104D0 (en) Methods and systems for modelind an advanced 3-dimensional bottomhole assembly
GB2551017B (en) Etching gas composition for silicon compound, and etching method
MY165218A (en) Method for preparation of medetomidine with chloroacetone
IN2013MU00848A (en)
EP3273047A4 (en) Fuel gas supply system
MY165602A (en) Engine controller and engine control method
GB2529133B (en) Engine systems and methods for operating an engine
GB2530858B (en) Ionisation chamber with temperature-controlled gas feed
MX360288B (en) Electrically conductive bearing system and method.
SG10201908248PA (en) Processes for preparing fluoroketolides
TW201614113A (en) Liner for epi chamber
MX2016016233A (en) Anti-lgr5 antibodies and uses thereof.
PL3578792T3 (en) Method for increasing the efficiency of continuous combustion systems
EP3673505A4 (en) Inject assembly for epitaxial deposition processes
TW201614251A (en) Electronic component transporting device and electronic component inspecting device
SG10201506020UA (en) Chemical vapor deposition system, arrangement of chemical vapor deposition systems, and chemical vapor deposition method
ZA201803699B (en) Cooling system for emission gases of an electronically controlled engine
GB2569507B (en) Pre-chamber assembly for fuel injector
GB201715524D0 (en) Vapor chamber with ring geometry
PL3443266T3 (en) Improved injectors for gas turbine combustion chamber