TW201600299A - Forming mold - Google Patents
Forming mold Download PDFInfo
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- TW201600299A TW201600299A TW104104951A TW104104951A TW201600299A TW 201600299 A TW201600299 A TW 201600299A TW 104104951 A TW104104951 A TW 104104951A TW 104104951 A TW104104951 A TW 104104951A TW 201600299 A TW201600299 A TW 201600299A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/26—Moulds
- B29C45/37—Mould cavity walls, i.e. the inner surface forming the mould cavity, e.g. linings
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/26—Moulds
- B29C45/37—Mould cavity walls, i.e. the inner surface forming the mould cavity, e.g. linings
- B29C2045/378—Mould cavity walls, i.e. the inner surface forming the mould cavity, e.g. linings built by a stack of modular elements
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
Description
本發明係關於一種在成形成形品時被使用之成形模具。 The present invention relates to a molding die which is used in molding a molded article.
在專利文獻1(日本特開2011-79261號公報)中,開示有在由陶瓷所構成之基材(5)的表面(8),形成有脫膜層(4)之成形模具。 In the patent document 1 (JP-A-2011-79261), a molding die in which a release layer (4) is formed on a surface (8) of a base material (5) made of ceramics is disclosed.
【先行技術文獻】 [First technical literature]
【專利文獻】 [Patent Literature]
【專利文獻1】日本特開2011-79261號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-79261
【專利文獻2】日本特開2010-185095號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2010-185095
專利文獻1所述之脫膜層(4),係脫膜性及防污性很優良。另外,在專利文獻1中,雖然使用由陶瓷所構成之基材,但是,在此情形下,基材之機械加工很困難,有基材很難處理(很容易產生龜裂或缺口)之問題。 The release layer (4) described in Patent Document 1 is excellent in release property and antifouling property. Further, in Patent Document 1, although a base material made of ceramic is used, in this case, mechanical processing of the base material is difficult, and there is a problem that the base material is difficult to handle (it is easy to cause cracks or notches). .
本發明係鑑於上述問題所研發出者,本發明之目的在於提供一種脫膜性及防污性很優良,而且,不太會產生龜裂或缺口之成形模具。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a molding die which is excellent in release property and antifouling property and which does not cause cracks or chipping.
本發明之成形模具,係在成形成形品時被使用之成形模具。 The molding die of the present invention is a molding die that is used in molding a molded article.
在本發明之一個局面中,成形模具係包括:基材,其係金屬製;以及陶瓷層,被設於基材上,包含氧化釔、氮及4A族元素的陽離子,與成形品接觸。 In one aspect of the invention, a molding die includes: a substrate made of a metal; and a ceramic layer provided on the substrate and containing cerium oxide, nitrogen, and a cation of a Group 4A element in contact with the molded article.
在一個實施形態中,成形模具還包括中介在基材與陶瓷層間之接著層。接著層可以單層形成,也可以複數層形成。 In one embodiment, the forming mold further includes an adhesive layer interposed between the substrate and the ceramic layer. The layer may be formed in a single layer or in a plurality of layers.
在本發明之另一局面中,成形模具係包括:基材,其係金屬製;陶瓷層,包含氧化釔、氮及4A族元素的陽離子,與前述成形品接觸;以及中間層,中介在基材與陶瓷層之間。中間層可以單層形成,也可以複數層形成。 In another aspect of the invention, the forming mold comprises: a substrate made of a metal; a ceramic layer comprising cerium oxide, nitrogen and a cation of a Group 4A element in contact with the molded article; and an intermediate layer interposed in the base Between the material and the ceramic layer. The intermediate layer may be formed in a single layer or in a plurality of layers.
在一個實施形態中,成形模具還包括中介在基材與中間層間之接著層。 In one embodiment, the forming die further includes an adhesive layer interposed between the substrate and the intermediate layer.
在一個實施形態中,成形模具還包括中介在中間層與陶瓷層間之接著層。 In one embodiment, the forming mold further includes an adhesive layer interposed between the intermediate layer and the ceramic layer.
在一個實施形態中,中間層係以複數層形成,在複數中間層中之至少兩個中間層間,中介有接著層。 In one embodiment, the intermediate layer is formed by a plurality of layers, and between the at least two intermediate layers of the plurality of intermediate layers, an interlayer is interposed.
在一個實施形態中,中間層係包括硬度高於基材,而且,韌性高於陶瓷層之部分。 In one embodiment, the intermediate layer comprises a portion having a higher hardness than the substrate and having a higher toughness than the ceramic layer.
在一個實施形態中,中間層係在至少陶瓷層側的表面部分中,硬度高於基材。 In one embodiment, the intermediate layer is in the surface portion of at least the ceramic layer side and has a higher hardness than the substrate.
在一個實施形態中,中間層係包含自基材側往陶瓷層側,硬度逐漸變化成高硬度之緩衝層。而且,在此所謂「變 化」,係包含連續性變化及階梯性變化,以及連續性與階梯性之組合中之任一者。 In one embodiment, the intermediate layer comprises a buffer layer whose hardness gradually changes to a high hardness from the side of the substrate to the side of the ceramic layer. And, here, the so-called "change The system consists of continuous changes and stepwise changes, as well as any combination of continuity and step.
在一個實施形態中,中間層係包含藉變化中間層的組成,使硬度連續性變化之緩衝層。 In one embodiment, the intermediate layer comprises a buffer layer that changes the hardness continuity by varying the composition of the intermediate layer.
在一個實施形態中,中間層係包含由M-A系(M係鈦、鉻、鎳、鋯、鋁或矽,A係氮、碳或氧。)之氮化物、碳化物、氧化物所構成之部分。 In one embodiment, the intermediate layer comprises a portion of a nitride, carbide, or oxide of MA (M-based titanium, chromium, nickel, zirconium, aluminum, or hafnium, A-based nitrogen, carbon, or oxygen). .
在一個實施形態中,接著層係包含由鈦、鉻、鎳、鋯、釔、鋁、矽的金屬單體或這些之混合物,或者,前述金屬單體的氧化物或包含複數前述金屬單體之氧化物所構成之部分。 In one embodiment, the subsequent layer comprises a metal monomer of titanium, chromium, nickel, zirconium, hafnium, aluminum, lanthanum or a mixture thereof, or an oxide of the foregoing metal monomer or a plurality of the aforementioned metal monomers The part of the oxide.
而且,在本申請案之專利說明書中之所謂「硬度」,係意味使用島津製作所股份有限公司製之「動態微小硬度計」(型號:DUH-211S),測量條件係「壓子:三角錐壓子(Berkovich型,陵間角115度),自表面之壓入深度:0.1μm,負載速度:設定值80(0.8758mN/sec),負載保持時間:15秒」,地進行測量。 In addition, the "hardness" in the patent specification of the present application means that the "dynamic micro hardness tester" (model: DUH-211S) manufactured by Shimadzu Corporation is used, and the measurement condition is "press: triangular cone pressure". Sub (Berkovich type, 115 degrees in the mausoleum), the depth of penetration from the surface: 0.1 μm, load speed: set value 80 (0.8758 mN/sec), load holding time: 15 seconds", and the measurement was performed.
當依據本發明時,可提供一種脫膜性及防污性很優良,而且,不太會產生龜裂或缺口之成形模具。 According to the present invention, it is possible to provide a molding die which is excellent in release property and antifouling property and which is less likely to cause cracks or chipping.
10‧‧‧金屬基材 10‧‧‧Metal substrate
20‧‧‧陶瓷層 20‧‧‧Ceramic layer
30‧‧‧中間層 30‧‧‧Intermediate
31,31A,31B‧‧‧緩衝層 31, 31A, 31B‧‧‧ buffer layer
32A,32B,32C,32D‧‧‧接著層 32A, 32B, 32C, 32D‧‧‧Next layer
第1圖係表示本發明一實施形態之成形模具的剖面之圖面。 Fig. 1 is a cross-sectional view showing a molding die according to an embodiment of the present invention.
第2圖係表示本發明另一實施形態之成形模具的剖面之圖面。 Fig. 2 is a cross-sectional view showing a molding die according to another embodiment of the present invention.
第3圖係更詳細表示中間層的構造的一例之剖面圖。 Fig. 3 is a cross-sectional view showing an example of the structure of the intermediate layer in more detail.
第4圖係更詳細表示中間層的構造的另一例之剖面圖。 Fig. 4 is a cross-sectional view showing another example of the structure of the intermediate layer in more detail.
第5圖係更詳細表示中間層的構造的另一例之剖面圖。 Fig. 5 is a cross-sectional view showing another example of the structure of the intermediate layer in more detail.
第6圖係表示針對本發明一實施例之成形模具,與比較例之成形模具之脫膜性評價之實驗結果之圖面。 Fig. 6 is a view showing the results of an experiment for evaluating the release property of a molding die according to an embodiment of the present invention and a molding die of a comparative example.
第7圖係表示使用本發明一實施例之成形模具,進行既定次數之成形動作後之該成形模具的底面之照片。 Fig. 7 is a photograph showing the bottom surface of the molding die after a predetermined number of molding operations using a molding die according to an embodiment of the present invention.
第8圖係表示使用比較例之成形模具,進行既定次數之成形動作後之該成形模具的底面之照片。 Fig. 8 is a photograph showing the bottom surface of the molding die after a predetermined number of molding operations using a molding die of a comparative example.
以下,說明本發明的實施形態。而且,相同或相當之部分,係賦予相同之參照編號,有時不重複其說明。 Hereinafter, embodiments of the present invention will be described. In addition, the same or corresponding parts are given the same reference numerals, and the description thereof will not be repeated.
而且,在以下說明之實施形態中,當言及個數及量等之時,除了有特別記載之外,本發明的範圍未必侷限於該個數及量等。又,在以下之實施形態中,各構成要素係除了有特別記載之情形外,對於本發明並非非要不可之物件。 Further, in the embodiments described below, the scope of the present invention is not necessarily limited to the number and the amount, unless otherwise specified. Further, in the following embodiments, each component is not essential to the present invention except for the case where it is specifically described.
首先,概略性說明本發明的實施形態。 First, an embodiment of the present invention will be briefly described.
本發明的一實施形態,係一種成形模具,被使用在成形成形品時,其特徵在於其包括:基材,其係金屬製;以及陶瓷層,被設於前述基材上,包含氧化釔、氮及4A族元素的陽離子,與前述成形品接觸。在前述基材與前述陶瓷層之間,也可以設有接著層。 An embodiment of the present invention is a molding die which is used in a molded article, characterized in that it comprises: a substrate made of a metal; and a ceramic layer provided on the substrate, comprising ruthenium oxide, The cation of nitrogen and a Group 4A element is in contact with the aforementioned molded article. An adhesive layer may be provided between the substrate and the ceramic layer.
又,本發明的一實施形態,係一種成形模具,被使用在成形成形品時,其特徵在於其包括:基材,其係金屬製; 以及陶瓷層,包含氧化釔、氮及4A族元素的陽離子,與前述成形品接觸;而且包括中介在前述基材與前述陶瓷層間之中間層。又,在前述基材與中間層之間,也可以中介有接著層。而且,在前述中間層與前述陶瓷層之間,也可以中介有接著層。 Moreover, an embodiment of the present invention is a molding die which is used in a molded article, and is characterized in that it comprises a base material made of a metal; And a ceramic layer comprising a cation of cerium oxide, nitrogen and a Group 4A element in contact with the molded article; and an intermediate layer interposed between the substrate and the ceramic layer. Further, an adhesive layer may be interposed between the substrate and the intermediate layer. Further, an adhesive layer may be interposed between the intermediate layer and the ceramic layer.
而且,當使前述中間層以複數層形成時,在前述複數中間層中之至少兩個中間層間,也可以中介有接著層。 Further, when the intermediate layer is formed in a plurality of layers, an adhesive layer may be interposed between at least two intermediate layers of the plurality of intermediate layers.
而且,也可以使前述接著層以單層或複數層形成。 Further, the above-mentioned adhesive layer may be formed in a single layer or a plurality of layers.
又,在前述成形模具中,前述中間層係包括硬度高於前述基材,而且,韌性高於前述陶瓷層之部分。又,前述中間層係在至少前述陶瓷層側的表面部分中,硬度高於前述基材。 Further, in the molding die, the intermediate layer includes a portion having a higher hardness than the substrate and a higher toughness than the ceramic layer. Further, the intermediate layer is at least a surface portion of the ceramic layer side having a hardness higher than that of the substrate.
又,在前述成形模具中,可在前述中間層包含緩衝層,例如前述緩衝層之構成,係自前述基材側往前述陶瓷層側,硬度逐漸變化成高硬度。 Further, in the molding die, the intermediate layer may include a buffer layer, for example, the buffer layer, and the hardness gradually changes from the substrate side to the ceramic layer side to a high hardness.
又,在前述成形模具中,在前述中間層可以包含接著層。 Further, in the above molding die, the intermediate layer may include an adhesive layer.
又,緩衝層可設成複數層,在至少兩個緩衝層之間,可中介單層或複數層之接著層。 Further, the buffer layer may be provided as a plurality of layers, and between the at least two buffer layers, a single layer or an additional layer of a plurality of layers may be interposed.
而且,有時前述接著層係顯示緩衝層之功能。 Moreover, sometimes the aforementioned layer displays the function of the buffer layer.
又,例如有時以單層之接著層,很難接合中間層(緩衝層)與陶瓷層。在此情形下,也可以使中間層(緩衝層)與陶瓷層,中介多層之接著層(例如三層時,自陶瓷層側依序有第1接著層、第2接著層及第3接著層),以階梯性接合。 Further, for example, it is sometimes difficult to bond the intermediate layer (buffer layer) and the ceramic layer with a single layer of the subsequent layer. In this case, the intermediate layer (buffer layer) and the ceramic layer may be interposed with a plurality of layers (for example, in the case of three layers, the first subsequent layer, the second subsequent layer, and the third subsequent layer are sequentially provided from the ceramic layer side. ), joined in a stepwise manner.
亦即,使與陶瓷層接觸之第1接著層,以很容易與陶瓷層接著之物質構成,而且,使與中間層(緩衝層)接觸 之另一接著層(相當於前述第3接著層),以很容易與中間層(緩衝層)接著之物質構成。亦即,可依據需要,使接著層成為多層構造。 That is, the first subsequent layer in contact with the ceramic layer is made of a substance which is easily adhered to the ceramic layer, and is brought into contact with the intermediate layer (buffer layer). The other subsequent layer (corresponding to the third subsequent layer) is composed of a substance which is easily attached to the intermediate layer (buffer layer). That is, the adhesive layer can be made into a multilayer structure as needed.
而且,當使前述多層之接著層為三層時,可使前述第1接著層與前述第3接著層,以與第1接著層及前述第3接著層很容易接著之物質形成之第2接著層接合。 Further, when the plurality of adhesive layers of the plurality of layers are three layers, the first adhesive layer and the third adhesive layer can be formed by the second adhesive layer and the third adhesive layer. Layer bonding.
又,總而言之,前述中間層係實質性的緩衝層,前述中間層(緩衝層)可中介著其他層而與接著層接合(對於中間層而言之接著層之外部附加)。 Further, in summary, the intermediate layer is a substantial buffer layer, and the intermediate layer (buffer layer) may be bonded to the subsequent layer via another layer (addition to the exterior layer of the intermediate layer).
又,如圖例所示,前述中間層可由緩衝層與接著層構成,前述中間層成為包含前述接著層之中間層(中間層中之接著層的內部附加)。 Further, as shown in the example, the intermediate layer may be composed of a buffer layer and an adhesive layer, and the intermediate layer may be an intermediate layer including the adhesive layer (addition of the inside of the intermediate layer in the intermediate layer).
因此,本發明之中間層,係相對於成為實質性的中間層之緩衝層而言,可使接著層由外部或內部附加者。 Therefore, in the intermediate layer of the present invention, the adhesive layer can be attached to the outside or the inside with respect to the buffer layer which becomes the substantial intermediate layer.
而且,本發明之中間層,可以僅係緩衝層,或者,也可以僅係接著層。 Further, the intermediate layer of the present invention may be a buffer layer only, or may be a laminate layer only.
又,有時緩衝層也有接著作用,有時接著層也有緩衝作用。 Moreover, the buffer layer may also be used for connection, and the subsequent layer may also have a buffering effect.
又,言及前述中間層(緩衝層或接著層)所做緩衝作用。前述陶瓷層係薄層,相對於金屬製之基材而言,硬度較硬且韌性較低。做為緩衝此兩者的硬度之差及韌性之差之層,而設置中間層。 Also, the buffering effect of the aforementioned intermediate layer (buffer layer or subsequent layer) is mentioned. The ceramic layer-based thin layer has a hardness and a low toughness with respect to a metal substrate. The intermediate layer is provided as a layer for buffering the difference in hardness and toughness between the two.
以下,使用圖面更具體性說明。 Hereinafter, the details will be described using the drawings.
第1圖係表示本實施形態之成形模具的剖面之圖面。本實 施形態之成形模具,係當成形樹脂成形品等之時被使用者,如第1圖所示,其包括:金屬基材10;以及陶瓷層20,被設於金屬基材10上,與成形品接觸。 Fig. 1 is a plan view showing a cross section of a molding die of the embodiment. Real The molding die of the embodiment is formed by a user when molding a resin molded article or the like, as shown in Fig. 1, comprising: a metal substrate 10; and a ceramic layer 20 which is provided on the metal substrate 10 and formed Product contact.
金屬基材10可以由鐵系材料(例如不銹鋼、碳鋼、合金鋼、合金工具鋼、高速鋼及預硬鋼等)所構成,也可以由非鐵系材料(銅系、鋁系、超硬合金鋼系等)所構成。藉此,可獲得加工性優良,同時不太產生龜裂或缺口之金屬基材10。 The metal substrate 10 may be composed of an iron-based material (for example, stainless steel, carbon steel, alloy steel, alloy tool steel, high-speed steel, and pre-hardened steel), or may be made of a non-ferrous material (copper, aluminum, super hard). Alloy steel system, etc.). Thereby, the metal substrate 10 which is excellent in workability and which does not generate cracks or notches can be obtained.
陶瓷層20係包含氧化釔、氮及4A族元素的陽離子。藉此,提供一種脫膜性及防污性很優良之成形模具。金屬基材10與陶瓷層20,也可以透過未圖示之接著層接合。 The ceramic layer 20 is a cation containing cerium oxide, nitrogen, and a Group 4A element. Thereby, a molding die excellent in release property and antifouling property is provided. The metal base material 10 and the ceramic layer 20 may be joined by an adhesive layer (not shown).
金屬基材10可藉切削加工或放電加工等先前之金屬加工法形成。陶瓷層20係例如可藉濺鍍或離子鍍等物理性蒸著法(PVD)形成。 The metal substrate 10 can be formed by a prior metal working method such as cutting or electric discharge machining. The ceramic layer 20 can be formed, for example, by physical vapor deposition (PVD) such as sputtering or ion plating.
在第1圖之例中,陶瓷層20的厚度係0.1μm~5μm左右。金屬基材10與陶瓷層20間之接著層的厚度,係0.01μm~1μm左右。 In the example of Fig. 1, the thickness of the ceramic layer 20 is about 0.1 μm to 5 μm. The thickness of the adhesion layer between the metal substrate 10 and the ceramic layer 20 is about 0.01 μm to 1 μm.
第2圖係表示另一實施形態之成形模具的剖面之圖面。在第2圖所示之實施形態中,成形模具還包括中介在基材10與陶瓷層20間之中間層30。中間層30係包括硬度高於金屬基材10,而且韌性高於陶瓷層20之部分。藉此,可抑制陶瓷層20龜裂,或者,金屬基材10剝離。 Fig. 2 is a plan view showing a cross section of a molding die according to another embodiment. In the embodiment shown in Fig. 2, the forming mold further includes an intermediate layer 30 interposed between the substrate 10 and the ceramic layer 20. The intermediate layer 30 includes a portion having a higher hardness than the metal substrate 10 and having a higher toughness than the ceramic layer 20. Thereby, the ceramic layer 20 can be suppressed from being cracked or the metal base material 10 can be peeled off.
在第2圖之例中,中間層30的厚度係0.2μm~5μm左右。陶瓷層20的厚度係與第1圖之例相同地,為0.1μm~5μm左右。 In the example of Fig. 2, the thickness of the intermediate layer 30 is about 0.2 μm to 5 μm. The thickness of the ceramic layer 20 is about 0.1 μm to 5 μm as in the example of Fig. 1 .
接著,使用第3圖~第5圖,詳細說明中間層30 的構造。在第3圖之例中,中間層30係包括緩衝層31A,31B與接著層32A,32B,在第4圖之例中,中間層30係包括緩衝層31與接著層32A,32B,在第5圖之例中,中間層30係包括緩衝層31A,31B與接著層32A~32D。 Next, the intermediate layer 30 will be described in detail using FIGS. 3 to 5 . Construction. In the example of FIG. 3, the intermediate layer 30 includes buffer layers 31A, 31B and subsequent layers 32A, 32B. In the example of FIG. 4, the intermediate layer 30 includes a buffer layer 31 and an adhesive layer 32A, 32B. In the example of Fig. 5, the intermediate layer 30 includes buffer layers 31A, 31B and subsequent layers 32A to 32D.
亦即,如第3圖及第5圖所示,緩衝層可以由複數層構成,也可以如第4圖所示,由單層構成。如第3圖及第4圖所示,接著層可以在緩衝層的兩側,由單層構成,也可以如第5圖所示,在緩衝層的一邊側由複數層構成,在另一邊側由單層構成,而且,也可以在緩衝層的兩側,由複數層構成。 That is, as shown in Figs. 3 and 5, the buffer layer may be composed of a plurality of layers, or may be composed of a single layer as shown in Fig. 4. As shown in FIGS. 3 and 4, the adhesive layer may be composed of a single layer on both sides of the buffer layer, or may be composed of a plurality of layers on one side of the buffer layer and on the other side as shown in FIG. It is composed of a single layer, and may be composed of a plurality of layers on both sides of the buffer layer.
而且,在第5圖的中間層30中,也可以在與成為實質性中間層之緩衝層31A,31B之間,設置由單層或複數層所構成之接著層。又,當在前述緩衝層(實質性之中間層)設有與其他層之接著層時,前述中間層成為包含接著層者。 Further, in the intermediate layer 30 of Fig. 5, an adhesive layer composed of a single layer or a plurality of layers may be provided between the buffer layers 31A and 31B which are substantially intermediate layers. Further, when the buffer layer (substantial intermediate layer) is provided with an adhesion layer to another layer, the intermediate layer is a layer including the subsequent layer.
又,在第4圖中,可直接接合緩衝層31與金屬基材10。而且,在第4圖中,可以直接接合緩衝層31與陶瓷層20。 Further, in Fig. 4, the buffer layer 31 and the metal substrate 10 can be directly bonded. Moreover, in FIG. 4, the buffer layer 31 and the ceramic layer 20 can be directly bonded.
緩衝層與接著層皆可例如藉濺鍍或離子鍍等之物理性蒸著法(PVD)形成。 Both the buffer layer and the adhesive layer can be formed, for example, by physical vapor deposition (PVD) such as sputtering or ion plating.
緩衝層最好自硬度較低之金屬基材10側,往硬度較高之陶瓷層20側,改變成高硬度。例如如第3圖及第5圖所示,當係層積構造之緩衝層31A,31B時,藉使金屬基材10側的緩衝層31A的硬度,低於陶瓷層20側的緩衝層31B的硬度,可使硬度階梯性地變化。又,如第4圖所示,當係單層構造緩衝層31時,藉在緩衝層的厚度方向上改變組成(例如隨著接近金屬基材10,減少氮濃度),可連續性改變硬度。 The buffer layer is preferably changed from a side of the metal substrate 10 having a lower hardness to a side of the ceramic layer 20 having a higher hardness to a high hardness. For example, as shown in FIGS. 3 and 5, when the buffer layers 31A and 31B are laminated, the hardness of the buffer layer 31A on the metal substrate 10 side is lower than that of the buffer layer 31B on the ceramic layer 20 side. Hardness can change the hardness stepwise. Further, as shown in Fig. 4, when the buffer layer 31 is formed in a single layer, the composition is changed in the thickness direction of the buffer layer (for example, the nitrogen concentration is decreased as it approaches the metal substrate 10), and the hardness can be continuously changed.
緩衝層係例如由M-A系(M係鈦、鉻、鎳、鋯、鋁或矽,A係氮、碳或氧。)之氮化物、碳化物、氧化物所構成。 The buffer layer is made of, for example, a nitride, a carbide, or an oxide of M-A (M-based titanium, chromium, nickel, zirconium, aluminum, or antimony, A-based nitrogen, carbon, or oxygen).
接著層係例如係包含由鈦、鉻、鎳、鋯、釔、鋁、矽的金屬單體或這些之混合物,或者,前述金屬單體的氧化物或包含複數前述金屬單體之氧化物所構成。 The layer is then comprised of, for example, a metal monomer of titanium, chromium, nickel, zirconium, hafnium, aluminum, lanthanum or a mixture thereof, or an oxide of the foregoing metal monomer or an oxide comprising a plurality of the aforementioned metal monomers. .
構成緩衝層之素材及構成接著層之素材,可適宜選擇以組合之。而且,緩衝層的厚度(合計)係0.2μm~5μm左右。 The material constituting the buffer layer and the material constituting the subsequent layer can be appropriately selected and combined. Further, the thickness (total) of the buffer layer is about 0.2 μm to 5 μm.
接著,使用第6圖,說明由本發明實施例所做之脫膜性之提高。第6圖係表示針對本發明一實施例之成形模具,與比較例之成形模具(在金屬基材施加有鍍硬鉻者),進行既定次數之成形動作,此時,藉測量脫膜力,評估脫膜性之實驗結果之圖面。 Next, the improvement of the release property by the embodiment of the present invention will be described using Fig. 6. Fig. 6 is a view showing a molding die according to an embodiment of the present invention, and a molding die of a comparative example (when a hard chrome plate is applied to a metal substrate), a molding operation is performed for a predetermined number of times, and at this time, by measuring the release force, A picture of the experimental results of the evaluation of the release property.
參照第6圖,當依據本發明實施例之成形模具時,可知:與比較例之成形模具相比較下,脫膜力被減少,藉陶瓷層20而成為脫膜性優良之成形模具。 Referring to Fig. 6, in the case of the molding die according to the embodiment of the present invention, it is understood that the releasing force is reduced as compared with the molding die of the comparative example, and the ceramic layer 20 is used as a molding die having excellent release property.
接著,使用第7圖及第8圖,說明由本發明的實施例所做之防污性提高。第7圖及第8圖係分別表示使用本發明一實施例之成形模具,及使用比較例之成形模具,進行既定次數(第7圖:1000次,第8圖:300次)之成形動作後之該成形模具的底面之照片。 Next, the improvement of the antifouling property by the embodiment of the present invention will be described using Figs. 7 and 8. 7 and 8 are views showing a molding die according to an embodiment of the present invention and a molding die of a comparative example, which are formed for a predetermined number of times (Fig. 7: 1000 times, Fig. 8: 300 times). A photograph of the bottom surface of the forming mold.
參照第7圖及第8圖,在本發明實施例之成形模具(第7圖)中,在進行1000次成形動作後,也不被認為有顯著之髒污,相對於此,在比較例之成形模具(第8圖)中,在300次成形動作後,於A部中,被認為有樹脂固著,另外在 B部中,被認為有餘料堆積。而且,在模穴底面整體中,被認為有變色。由以上結果可知:藉陶瓷層20可成為防污性優良之成形模具。 Referring to Fig. 7 and Fig. 8, in the molding die (Fig. 7) of the embodiment of the present invention, after 1000 molding operations, no significant staining was observed, and in the comparative example, In the molding die (Fig. 8), after 300 molding operations, it is considered that resin is fixed in the A portion, and In Part B, it is considered that there is excess material accumulated. Moreover, it is considered to have discoloration in the entire bottom surface of the cavity. From the above results, it is understood that the ceramic layer 20 can be used as a molding die having excellent antifouling properties.
如此一來,當依據本實施形態之成形模具時,藉使用陶瓷層20,可做成脫膜性及防污性優良之成形模具,同時藉使用金屬基材10,可抑制成形模具的龜裂或缺口。而且,藉中間層30,可改善金屬基材10與陶瓷層20之接合構造,可抑制陶瓷層20的龜裂,或自金屬基材10之剝離。 In the case of the molding die according to the present embodiment, by using the ceramic layer 20, a molding die excellent in release property and antifouling property can be obtained, and by using the metal substrate 10, cracking of the molding die can be suppressed. Or gap. Further, the intermediate layer 30 can improve the joint structure of the metal base material 10 and the ceramic layer 20, and can suppress cracking of the ceramic layer 20 or peeling from the metal base material 10.
而且,前述成形模具可使用在例如射出成形、傳遞成形或壓縮成形。 Moreover, the aforementioned molding die can be used, for example, in injection molding, transfer molding, or compression molding.
當傳遞成形(或壓縮成形)時,可使用樹脂材料,在組裝於基板上之半導體晶片上設有陶瓷層之模穴內,於對應該模穴形狀之封裝(成形品)內,實施密封成形(或壓縮成形)。 When transfer molding (or compression molding), a resin material may be used, and a sealing layer is formed in a cavity (a molded article) corresponding to a cavity shape in a cavity in which a ceramic layer is provided on a semiconductor wafer assembled on a substrate. (or compression forming).
以上,雖然說明過本發明的實施形態,但是,必須考慮成這次開示之實施形態,並非例示全部點,也非用於侷限本發明者。本發明的範圍係藉專利申請範圍以表示,其包含與專利申請範圍均等之意味,及在範圍內之全部變更。 Although the embodiments of the present invention have been described above, the embodiments of the present invention must be considered, and are not intended to be exhaustive or to limit the invention. The scope of the present invention is defined by the scope of the patent application, and the scope of the invention is intended to be equivalent to the scope of the patent application.
10‧‧‧金屬基材 10‧‧‧Metal substrate
20‧‧‧陶磁層 20‧‧‧ceramic layer
30‧‧‧中間層 30‧‧‧Intermediate
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