TW201511114A - 裝置晶圓之加工方法 - Google Patents
裝置晶圓之加工方法 Download PDFInfo
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- TW201511114A TW201511114A TW103126221A TW103126221A TW201511114A TW 201511114 A TW201511114 A TW 201511114A TW 103126221 A TW103126221 A TW 103126221A TW 103126221 A TW103126221 A TW 103126221A TW 201511114 A TW201511114 A TW 201511114A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
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- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本發明之課題為提供一種即使對未形成有凹槽(notch)或是晶向定位平邊(orientation flat)等的裝置晶圓,也能依預定之方向將晶圓裝設在環狀框架(ring frame)上的裝置晶圓之加工方法。解決手段為在被複數條交叉的分割預定線劃分而成的表面之各區塊中分別形成有裝置的裝置晶圓之加工方法,其特徵在於,包含拍攝裝置晶圓的表面以檢測並記憶目標圖樣(target pattern)的目標圖樣記憶步驟,在裝置晶圓的表面貼上表面保護膠帶的保護膠帶黏貼步驟,實施過該保護膠帶黏貼步驟後,透過該表面保護膠帶保持裝置晶圓的表面側並磨削裝置晶圓的背面以薄化成預定的厚度的薄化步驟,實施過該薄化步驟後,拍攝裝置晶圓的表面,並根據該目標圖樣記憶步驟中所記憶的目標圖樣相對於環狀框架將裝置晶圓定位於預定的方向的定位步驟,以及實施過該定位步驟後,在裝置晶圓之背面貼上膠帶同時透過該膠帶將裝置晶圓裝設於該環狀框架,並將該表面保護膠帶從裝置晶圓的表面去除的轉寫步驟。
Description
本發明是有關於一種在表面形成有複數個裝置的裝置晶圓之加工方法。
表面形成有複數個裝置的裝置晶圓(device wafer),是經由將背面磨削以薄化成預定的厚度後,在背面貼上作為黏著膠帶的切割膠帶(dicing tape)而裝設於環狀框架,同時在背面磨削時將黏貼在裝置晶圓表面的表面保護膠帶去除的轉寫步驟,再用切削裝置或雷射加工裝置等分割成一個個裝置晶片(device chip)。
要將裝置晶圓裝設在環狀框架時必須以預定的位置關係裝設。以往是以表示裝置晶圓的結晶方位之標記為基準將裝置晶圓相對於環狀框架定位而裝設於環狀框架上。
但是,當將凹槽(notch)或是晶向定位平邊(orientation flat)等缺口形成在晶圓的外周部後,在晶圓上可以形成的裝置數量就會減少。尤其是,因為晶向定位平邊會對晶圓面造成大缺口,所以近年來在廣泛被使用的Φ8吋或Φ12吋的晶圓上,是採用切口較小的凹槽來取代晶向定
位平邊。
但是,對將凹槽形成於外周部的晶圓,在要將裝置形成在晶圓上時所進行的熱處理步驟等中,有以凹槽處為起點產生龜裂之虞,因此對不形成凹槽而在晶圓背面標示可表示結晶方位之標記的方法進行檢討。
專利文獻1:日本專利特開2005-86074號公報
但是,在晶圓背面形成的標記,會在背面磨削步驟中將晶圓薄化至預定的厚度時被去除,在進行將晶圓裝設到環狀框架之晶圓的轉寫時會有相對於環狀框架之基準消失的問題。
因為在切削裝置或雷射加工裝置上的晶圓位置的決定是以環狀框架為基準而實施,所以當未相對於環狀框架以預定的方向裝設晶圓時,在切削裝置或雷射加工裝置上所進行的檢測加工位置之校準(alignment)作業上恐有產生不良狀況之虞。
本發明是有鑑於此點而作成者,其目的為提供一種即使對未形成有凹槽或晶向定位平邊等的裝置晶圓,也可以依預定之方向將晶圓裝設在環狀框架上的裝置晶圓之加工方法。
根據本發明所提供的裝置晶圓之加工方法,是在被複數條交叉的分割預定線劃分而成的表面之各區塊中分別形成有裝置的裝置晶圓之加工方法,其特徵在於,其包含:拍撮裝置晶圓的表面以檢測並記憶目標圖樣(target pattern)的目標圖樣記憶步驟;在裝置晶圓的表面黏貼表面保護膠帶的保護膠帶黏貼步驟;實施過該保護膠帶黏貼步驟後,透過該表面保護膠帶保持裝置晶圓的表面側並磨削裝置晶圓的背面以薄化成預定的厚度的薄化步驟;實施過該薄化步驟後,拍攝裝置晶圓的表面,並根據該目標圖樣記憶步驟中所記憶的目標圖樣相對於環狀框架將裝置晶圓定位於預定的方向的定位步驟;以及實施過該定位步驟後,在裝置晶圓之背面貼上膠帶同時透過該膠帶將裝置晶圓裝設於該環狀框架,並將該表面保護膠帶從裝置晶圓的表面去除的轉寫步驟。
較理想的是,裝置晶圓之加工方法還包含,實施過轉寫步驟後,將裝置晶圓沿分割預定線分割的分割步驟。
本發明的裝置晶圓之加工方法,是拍撮裝置晶圓以檢測並記憶目標圖樣,根據所記憶的目標圖樣相對於環狀框架將裝置晶圓定位於預定方向,並透過膠帶裝設在環狀框架上。藉此,即使對未形成有凹槽或是晶向定位平邊等的裝置晶圓,也可以在環狀框架上以預定之方向裝設裝置晶圓。
2‧‧‧磨削裝置
4‧‧‧底座
6‧‧‧柱體
8‧‧‧導軌
10‧‧‧磨削單元
11‧‧‧裝置晶圓
11a‧‧‧表面
11b‧‧‧背面
12‧‧‧移動基台
13‧‧‧分割預定線
15‧‧‧裝置
17‧‧‧目標圖樣
17a、17b‧‧‧邊
18‧‧‧磨削單元移動機構
19‧‧‧表面保護膠帶
20‧‧‧殼體
24‧‧‧主軸
26‧‧‧砂輪安裝座
28‧‧‧磨削輪
30‧‧‧螺絲
32‧‧‧輪盤基座
34‧‧‧磨削研磨石
36‧‧‧夾頭台機構
38、68‧‧‧夾頭台
40‧‧‧伸縮件
42‧‧‧晶舟盒
44‧‧‧晶圓搬運自動機械
46‧‧‧定位機構
48‧‧‧定位銷
50‧‧‧晶圓搬入機構
52‧‧‧晶圓搬出機構
54‧‧‧旋轉洗淨單元
56‧‧‧旋轉台
58‧‧‧洗淨水噴射噴嘴
60‧‧‧貼膜機
61‧‧‧連續式系統
62‧‧‧撮像單元
64a、64b‧‧‧第1方向切口部
66a、66b‧‧‧第2方向切口部
70‧‧‧切削單元
72‧‧‧主軸殼體
74‧‧‧主軸
76‧‧‧切削刀片
78‧‧‧切削溝
T‧‧‧切割膠帶
F‧‧‧環狀框架
a、b、A、X1‧‧‧箭形符號
圖1為表示磨削裝置與貼膜機(tape mounter)之連續式系統(inline system)的立體圖;圖2為各裝置具有目標圖樣的裝置晶圓的立體圖;圖3所示為保護膠帶黏貼步驟的立體圖;圖4所示為薄化步驟的立體圖;圖5是說明定位步驟的側視圖;圖6所示為轉寫步驟的截面圖;圖7是轉寫步驟後之透過切割膠帶被支撐在環狀框架上的晶圓的立體圖;及圖8所示為分割步驟的立體圖。
以下,參照圖式詳細地說明本發明之實施形態。參照圖1,是表示磨削裝置2與貼膜機60之間以順列(inline)方式連接的連續式系統(inline system)61的立體圖。為了表示與磨削裝置2的位置關係而將貼膜機60模式地顯示。
4是磨削裝置2的底座(殼體),並於底座4的後方豎立設置柱體6。在柱體6上固定有一對在上下方向上延伸的導軌(圖中僅顯示一條)8。
沿著這一對導軌8裝設有可在上下方向上移動的磨削單元(磨削機構)10。磨削單元10是將其殼體20安裝在沿著一對導軌8在上下方向上移動的移動基台12上。
磨削單元10包含有殼體20、收納在殼體20中而可
以旋轉的主軸22(參照圖4)、旋轉驅動主軸22的伺服馬達24,以及被固定在主軸22前端部的砂輪安裝座26。
如圖4所示,在砂輪安裝座26上透過複數個螺絲
30將磨削輪28裝設成可裝卸。磨削輪28是由環狀的輪盤基座32,以及在輪盤基座32的下端部固接成環狀之複數個磨削研磨石34所構成。
在底座4的中央部分配置有具有夾頭台38的夾頭
台機構36,夾頭台38是透過圖未示之夾頭台移動機構在Y軸方向上移動。40是覆蓋夾頭台機構36的伸縮件。
在底座4的前側部分配置有容納複數個晶圓的晶
舟盒(wafer cassette)42、晶圓搬運自動機械44、具有複數個定位銷48的定位機構46、晶圓搬入機構(裝載手臂)50、晶圓搬出機構(卸載手臂)52,以及具有旋轉台56的旋轉洗淨單元54。
又,在底座4接近中央部處設置有清洗夾頭台38
的洗淨水噴射噴嘴58。該洗淨水噴射噴嘴58,是在將夾頭台38定位於裝置前側的晶圓搬入.搬出區域的狀態下,朝夾頭台38噴射洗淨水。
鄰接磨削裝置2的旋轉洗淨單元54,配置有將作
為黏著膠帶的切割膠帶黏貼於已完成背面磨削的裝置晶圓上,並將切割膠帶的外周部裝設至環狀框架的貼膜機60。
磨削裝置2與貼膜機60,是以可在已磨削完成的
裝置晶圓上透過切割膠帶以預定的位置關係裝設環狀框架的順列(inline)關係來配置。
參照圖2,所示為裝置晶圓11的表面11a側的立體
圖。在裝置晶圓11的表面11a上,透過形成格子狀的複數條分割預定線(切割道)13劃分出的各區塊中形成有LSI等的裝置15。
在各裝置15上形成有由複數種圖樣(pattern)所形
成的LSI等的電子電路,可從複數種圖樣中選定易於在校準中利用的圖樣17作為目標圖樣(target pattern)。
該選定是透過作業員用包含顯微鏡與照相機的
撮像單元拍攝裝置晶圓11的表面11a而實施。作為目標圖樣17的條件是,至少其中一個邊17a必須要與沿第1方向延伸的分割預定線13平行。
在圖示的目標圖樣17中,邊17a與邊17b垂直相
交,邊17b與直交於沿第1方向延伸的分割預定線13之沿第2方向延伸的分割預定線13垂直相交。
本發明的裝置晶圓之加工方法,首先是如圖3所
示,實施將表面保護膠帶19黏貼於裝置晶圓11的表面11a的保護膠帶黏貼步驟。表面保護膠帶19是在進行裝置晶圓11之背面11b的磨削時用於保護形成在表面11a的裝置15者。
實施過保護膠帶黏貼步驟後,可實施磨削裝置晶
圓11的背面11b以將裝置晶圓11薄化成為預定之厚度的薄化步驟。該薄化步驟,如圖4所示,是以磨削裝置的磨削單元20施行。
亦即,是如圖4所示,用磨削裝置的夾頭台38將
表面保護膠帶19側吸引保持住,以使裝置晶圓11的背面11b
露出。然後,一邊繞箭形符號a方向用例如300rpm旋轉夾頭台38,一邊使磨削輪28繞與夾頭台38相同的方向,即箭形符號b方向以例如6000rpm旋轉,同時作動磨削單元移動機構18以讓磨削研磨石34接觸裝置晶圓11之背面11b。
然後,將磨削輪28以預定之磨削傳送速度向下方
作預定量的磨削傳送,以實施裝置晶圓11的磨削處理。可一邊用圖未示之接觸式或非接觸式的厚度測定計指定晶圓11的厚度,一邊將晶圓11加工到期望的厚度,例如100μm。
透過磨削輪28實施薄化步驟後,驅動夾頭台移動
機構以將夾頭台38定位至裝置前側的晶圓搬入.搬出區域。然後,用晶圓搬出機構(卸載手臂)52吸附已磨削完成之裝置晶圓11並透過卸載手臂52之旋轉動作將裝置晶圓11搬運到旋轉洗淨單元54的旋轉台56,並如圖5所示,用旋轉台56吸引保持黏貼在裝置晶圓11的表面之表面保護膠帶19側。
用旋轉洗淨單元54之旋轉台56將裝置晶圓11吸
引保持後,一邊使旋轉台56以預定的旋轉速度旋轉一邊將純水等的洗淨水供應到裝置晶圓11以將裝置晶圓11旋轉洗淨。旋轉洗淨完成後,可一邊噴出例如壓縮空氣等一邊將裝置晶圓11旋轉洗淨。
接著,用配置在比旋轉台56還下側之具有顯微鏡
及照相機的撮像單元62透過保護膠帶19拍撮裝置晶圓11的表面11a,並檢測出所記憶的目標圖樣17。
在此,由於表面保護膠帶19是由在聚烯烴
(polyolefin)等的透明樹脂基材的表面塗覆有橡膠類或丙烯酸類的黏著層而形成,所以使用可在可見光下進行拍攝的普通相機就可透過表面保護膠帶19拍攝出裝置晶圓11的表面11a。由於撮像單元62是配置在洗淨水會飛散的環境中,所以會將其建構成防水結構。
另一方面,當撮像單元62採用顯微鏡與紅外線相
機時,是將撮像單元62設置在裝置晶圓11的上方,並可用紅外線相機透過裝置晶圓11檢測出形成在表面11a的目標圖樣17。
檢測出形成在裝置15上的目標圖形17後,可轉動
旋轉台56以將目標圖樣17的邊17a與載置於貼膜機60上的環狀框架F變成預定的位置關係(定位步驟)。
如圖7所示,環狀框架F具有一對互相平行的第1
方向切口部64a、64b,以及一對在與第1方向缺口部64a、64b垂直相交的方向上延伸且相互平行的第2方向缺口部66a、66b。
晶圓搬運自動機械44是從在預定位置停止的旋
轉台56吸附裝置晶圓11並透過伸縮與旋轉動作將裝置晶圓11搬送到與磨削裝置2以順列(inline)關係配置的貼膜機60處。
由於晶圓搬運自動機械44的旋轉角度是預先設
定好的,所以要以晶圓搬運自動機械44將裝置晶圓11搬送到貼膜機60時,可始終以相同姿勢將其搬送到相同位置。
因此,當將黏貼有作為黏著膠帶的切割膠帶T的
環狀框架F配置在貼膜機60的預定位置,且使旋轉台56停止以將以撮像單元62拍攝並檢測出的裝置15之目標圖樣17的邊17a變成在預定的方向時,就可以將在晶圓搬運自動機械44所搬送的裝置晶圓11的第1方向上延伸的分割預定線13變成與第1方向切口部64a、64b平行地將裝置晶圓11黏貼到切割膠帶T上。
如此,將裝置晶圓11相對於環狀框架F以預定的
位置關係黏貼到切割膠帶T後,就可以如圖6所示,將表面保護膠帶19從裝置晶圓11的表面11a去除。
為了將裝置晶圓11從表面保護膠帶19轉寫到切
割膠帶T,在本說明書及專利請求之範圍中是將這一連串的步驟稱為轉寫步驟。參照圖7,所示為轉寫步驟完成後,透過切割膠帶T被環狀框架F支撐的裝置晶圓11的立體圖。
實施過轉寫步驟後,實施一邊使高速旋轉的切割
刀片76切進切割膠帶T一邊沿分割預定線13切削裝置晶圓11的分割步驟。
如圖8所示,切削裝置的切削單元70是由收納於
主軸殼體72中且可旋轉的主軸74,以及裝設於主軸74前端部的切削刀片76所構成。
在該分割步驟中,是在切削裝置的夾頭台68上透
過切割膠帶T吸引保持晶圓11,並一邊使切削刀片76繞箭形符號A方向高速旋轉同時使其切進到切割膠帶T,一邊在箭形符號X1方向上加工傳送夾頭台68,同時沿分割預定線13切削晶圓11以將晶圓11分割成一個個裝置晶片15。在圖8
中,78為以切削刀片76切削出的切削溝。
將切削單元70依分割預定線13的間距(pitch)分度傳送,同時切削所有沿第一方向延伸的分割預定線13。接著,將夾頭台68旋轉90度,然後切削所有沿與第一方向垂直相交之第二方向延伸的分割預定線13,就可將晶圓11分割成一個個的裝置晶片15。
晶圓11的分割步驟並非僅限於透過切削刀片76分割者,也可以進行經由雷射加工裝置之燒蝕(ablation)加工或在晶圓11內部形成成為分割起始點的改質層,並對晶圓11施予外力以沿該改質層分割晶圓11。
在上述的實施形態中,雖然是在磨削裝置2的旋轉洗淨單元54上實施根據所記憶的目標圖樣17,相對環形框架F將裝置晶圓11定位於預定的方向之定位步驟,但設定成在貼膜機60上實施此定位步驟亦可。
例如,可在貼膜機60的檢驗台(暫置台)上拍攝裝置晶圓11的表面11a,並旋轉檢驗台以將形成在裝置15上的目標圖樣17的邊17a變成與載置於貼膜機上之環狀框架F的第1方向缺口部64a、64b平行而將裝置晶圓11定位。
將裝置晶圓11以這種方式定位後,就可將裝置晶圓11黏貼到外周部被貼附在環狀框架F的切割膠帶T上,並將表面保護膠帶19從裝置晶圓11的表面11a去除。
11‧‧‧裝置晶圓
11b‧‧‧裝置晶圓的背面
19‧‧‧表面保護膠帶
54‧‧‧旋轉洗淨單元
56‧‧‧旋轉台
62‧‧‧撮像單元
Claims (2)
- 一種裝置晶圓之加工方法,是在被複數條交叉的分割預定線劃分而成的表面之各區塊中分別形成有裝置的裝置晶圓之加工方法,其特徵在於,包含:目標圖樣記憶步驟,拍攝裝置晶圓的表面以檢測並記憶目標圖樣;保護膠帶黏貼步驟,在裝置晶圓的表面黏貼表面保護膠帶;薄化步驟,實施過該保護膠帶黏貼步驟後,透過該表面保護膠帶保持裝置晶圓的表面側並磨削裝置晶圓的背面以薄化成預定的厚度;定位步驟,實施過該薄化步驟後,拍攝裝置晶圓的表面,並根據該目標圖樣記憶步驟中所記憶的目標圖樣,相對於環狀框架將裝置晶圓定位於預定的方向;以及轉寫步驟,實施過該定位步驟後,在裝置晶圓之背面貼上膠帶同時透過該膠帶將裝置晶圓裝設於該環狀框架,並將該表面保護膠帶從裝置晶圓的表面去除。
- 如請求項1所述的裝置晶圓之加工方法,還包含實施過該轉寫步驟後,將裝置晶圓沿該分割線分割的分割步驟。
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