TW201438291A - 光半導體裝置之製造方法 - Google Patents

光半導體裝置之製造方法 Download PDF

Info

Publication number: TW201438291A
Authority: TW; Taiwan
Prior art keywords: stage; phosphor sheet; manufacturing; optical semiconductor; led
Prior art date: 2013-03-27

Application number

TW103104986A

Other languages

English (en)

Chinese (zh)

Inventor

Yasunari Ooyabu

Akito Ninomiya

Hisataka Ito

Shigehiro Umetani

Munehisa Mitani

Original Assignee

Nitto Denko Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2013-03-27

Filing date

2014-02-14

Publication date

2014-10-01

2014-02-14 Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp

2014-10-01 Publication of TW201438291A publication Critical patent/TW201438291A/zh

Links

238000004519 manufacturing process Methods 0.000 title claims abstract description 155
230000003287 optical effect Effects 0.000 title claims abstract description 53
239000004065 semiconductor Substances 0.000 title claims abstract description 53
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 166
239000002966 varnish Substances 0.000 claims abstract description 62
229920005989 resin Polymers 0.000 claims abstract description 44
239000011347 resin Substances 0.000 claims abstract description 44
238000011156 evaluation Methods 0.000 claims abstract description 43
238000000034 method Methods 0.000 claims abstract description 17
238000002360 preparation method Methods 0.000 claims abstract description 14
239000011248 coating agent Substances 0.000 claims description 8
238000000576 coating method Methods 0.000 claims description 8
239000000758 substrate Substances 0.000 description 57
239000003054 catalyst Substances 0.000 description 14
238000006482 condensation reaction Methods 0.000 description 14
-1 (Ba Chemical compound 0.000 description 13
OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 13
239000011342 resin composition Substances 0.000 description 13
238000010438 heat treatment Methods 0.000 description 12
238000002156 mixing Methods 0.000 description 12
238000007789 sealing Methods 0.000 description 12
238000007259 addition reaction Methods 0.000 description 11
150000002430 hydrocarbons Chemical group 0.000 description 11
238000005984 hydrogenation reaction Methods 0.000 description 10
239000002245 particle Substances 0.000 description 10
238000009833 condensation Methods 0.000 description 9
230000005494 condensation Effects 0.000 description 9
229930195735 unsaturated hydrocarbon Natural products 0.000 description 9
239000000945 filler Substances 0.000 description 7
238000007689 inspection Methods 0.000 description 7
238000006243 chemical reaction Methods 0.000 description 6
XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 6
238000010521 absorption reaction Methods 0.000 description 5
238000003825 pressing Methods 0.000 description 5
229920001187 thermosetting polymer Polymers 0.000 description 5
230000000052 comparative effect Effects 0.000 description 4
239000004020 conductor Substances 0.000 description 4
MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical group CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 4
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
239000002994 raw material Substances 0.000 description 4
238000012360 testing method Methods 0.000 description 4
WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
239000005977 Ethylene Substances 0.000 description 3
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
125000003342 alkenyl group Chemical group 0.000 description 3
JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 3
150000001875 compounds Chemical class 0.000 description 3
230000006835 compression Effects 0.000 description 3
238000007906 compression Methods 0.000 description 3
230000004907 flux Effects 0.000 description 3
239000001257 hydrogen Substances 0.000 description 3
229910052739 hydrogen Inorganic materials 0.000 description 3
238000004020 luminiscence type Methods 0.000 description 3
239000000203 mixture Substances 0.000 description 3
VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 3
229920000139 polyethylene terephthalate Polymers 0.000 description 3
239000005020 polyethylene terephthalate Substances 0.000 description 3
229920002098 polyfluorene Polymers 0.000 description 3
239000002904 solvent Substances 0.000 description 3
239000000126 substance Substances 0.000 description 3
229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 3
MFAWEYJGIGIYFH-UHFFFAOYSA-N 2-[4-(trimethoxymethyl)dodecoxymethyl]oxirane Chemical compound C(C1CO1)OCCCC(C(OC)(OC)OC)CCCCCCCC MFAWEYJGIGIYFH-UHFFFAOYSA-N 0.000 description 2
JZHKIUBMQMDQRG-UHFFFAOYSA-N C(=C)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C(=C)C(C(OC)(OC)OC)CCCCCCCC JZHKIUBMQMDQRG-UHFFFAOYSA-N 0.000 description 2
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
229930040373 Paraformaldehyde Natural products 0.000 description 2
229910004283 SiO 4 Inorganic materials 0.000 description 2
229910020175 SiOH Inorganic materials 0.000 description 2
230000005856 abnormality Effects 0.000 description 2
MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
239000012298 atmosphere Substances 0.000 description 2
239000000919 ceramic Substances 0.000 description 2
229910000420 cerium oxide Inorganic materials 0.000 description 2
125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
238000010586 diagram Methods 0.000 description 2
229920001971 elastomer Polymers 0.000 description 2
239000010419 fine particle Substances 0.000 description 2
NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
239000003112 inhibitor Substances 0.000 description 2
229910052751 metal Inorganic materials 0.000 description 2
239000002184 metal Substances 0.000 description 2
125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
229910052697 platinum Inorganic materials 0.000 description 2
229920001721 polyimide Polymers 0.000 description 2
229920006254 polymer film Polymers 0.000 description 2
229920006324 polyoxymethylene Polymers 0.000 description 2
229910052703 rhodium Inorganic materials 0.000 description 2
239000010948 rhodium Substances 0.000 description 2
MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
229910021332 silicide Inorganic materials 0.000 description 2
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
229920002554 vinyl polymer Polymers 0.000 description 2
XTDKZSUYCXHXJM-UHFFFAOYSA-N 2-methoxyoxane Chemical compound COC1CCCCO1 XTDKZSUYCXHXJM-UHFFFAOYSA-N 0.000 description 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
241000254158 Lampyridae Species 0.000 description 1
239000004640 Melamine resin Substances 0.000 description 1
229920000877 Melamine resin Polymers 0.000 description 1
CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
IGLKELDWPZFFKF-UHFFFAOYSA-N OC(C1=CC=CC=C1C(O)=O)=O.OC(C1=CC=CC=C1C(O)=O)=O.OC(C1=CC=CC=C1C(O)=O)=O.P.P Chemical compound OC(C1=CC=CC=C1C(O)=O)=O.OC(C1=CC=CC=C1C(O)=O)=O.OC(C1=CC=CC=C1C(O)=O)=O.P.P IGLKELDWPZFFKF-UHFFFAOYSA-N 0.000 description 1
239000004698 Polyethylene Substances 0.000 description 1
239000004642 Polyimide Substances 0.000 description 1
229920002675 Polyoxyl Polymers 0.000 description 1
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
229910003564 SiAlON Inorganic materials 0.000 description 1
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
229920001807 Urea-formaldehyde Polymers 0.000 description 1
230000002159 abnormal effect Effects 0.000 description 1
238000009825 accumulation Methods 0.000 description 1
150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
229920001577 copolymer Polymers 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
239000010949 copper Substances 0.000 description 1
PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
239000007822 coupling agent Substances 0.000 description 1
239000013078 crystal Substances 0.000 description 1
125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
239000004205 dimethyl polysiloxane Substances 0.000 description 1
235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
238000010894 electron beam technology Methods 0.000 description 1
239000003822 epoxy resin Substances 0.000 description 1
229940044949 eucalyptus oil Drugs 0.000 description 1
239000010642 eucalyptus oil Substances 0.000 description 1
229910052731 fluorine Inorganic materials 0.000 description 1
239000011737 fluorine Substances 0.000 description 1
239000011888 foil Substances 0.000 description 1
239000000446 fuel Substances 0.000 description 1
230000006870 function Effects 0.000 description 1
239000002223 garnet Substances 0.000 description 1
239000007789 gas Substances 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000010931 gold Substances 0.000 description 1
150000004820 halides Chemical class 0.000 description 1
125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
238000009434 installation Methods 0.000 description 1
230000001678 irradiating effect Effects 0.000 description 1
150000002632 lipids Chemical class 0.000 description 1
239000000463 material Substances 0.000 description 1
238000005259 measurement Methods 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
239000003921 oil Substances 0.000 description 1
JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
239000005011 phenolic resin Substances 0.000 description 1
229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
229920000647 polyepoxide Polymers 0.000 description 1
229920006267 polyester film Polymers 0.000 description 1
229920000573 polyethylene Polymers 0.000 description 1
239000009719 polyimide resin Substances 0.000 description 1
238000006116 polymerization reaction Methods 0.000 description 1
229920001296 polysiloxane Polymers 0.000 description 1
230000008569 process Effects 0.000 description 1
229910052707 ruthenium Inorganic materials 0.000 description 1
229930195734 saturated hydrocarbon Natural products 0.000 description 1
229910052709 silver Inorganic materials 0.000 description 1
239000004332 silver Substances 0.000 description 1
239000007901 soft capsule Substances 0.000 description 1
238000003756 stirring Methods 0.000 description 1
125000004964 sulfoalkyl group Chemical group 0.000 description 1
239000000454 talc Substances 0.000 description 1
229910052623 talc Inorganic materials 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
238000002834 transmittance Methods 0.000 description 1
229920006337 unsaturated polyester resin Polymers 0.000 description 1
239000008096 xylene Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Led Device Packages (AREA)

TW103104986A 2013-03-27 2014-02-14 光半導體裝置之製造方法 TW201438291A (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2013066293A JP2014192326A (ja)	2013-03-27	2013-03-27	光半導体装置の製造方法

Publications (1)

Publication Number	Publication Date
TW201438291A true TW201438291A (zh)	2014-10-01

Family

ID=51622884

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW103104986A TW201438291A (zh)	2013-03-27	2014-02-14	光半導體裝置之製造方法

Country Status (5)

Country	Link
JP (1)	JP2014192326A (ja)
KR (1)	KR20150135286A (ja)
CN (1)	CN104995755A (ja)
TW (1)	TW201438291A (ja)
WO (1)	WO2014155850A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US10158051B2 (en) *	2015-08-18	2018-12-18	Jiangsu Cherity Optronics Co., Ltd.	Process method for refining photoconverter to bond-package LED and refinement equipment system
JP6593237B2 (ja)	2016-03-22	2019-10-23	豊田合成株式会社	発光素子の製造方法、及び発光装置の製造方法
CN109074453B (zh)	2016-04-26	2021-10-26	三菱电机株式会社	入侵检测装置、入侵检测方法以及计算机能读取的存储介质

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4692059B2 (ja) *	2005-04-25	2011-06-01	パナソニック電工株式会社	発光装置の製造方法
US7344952B2 (en) *	2005-10-28	2008-03-18	Philips Lumileds Lighting Company, Llc	Laminating encapsulant film containing phosphor over LEDs
US20090117672A1 (en) *	2007-10-01	2009-05-07	Intematix Corporation	Light emitting devices with phosphor wavelength conversion and methods of fabrication thereof
EP2196503B1 (en) *	2008-12-12	2015-02-18	Nitto Denko Corporation	Thermosetting silicone resin composition, silicone resin, silicone resin sheet and use thereof
JP2010159411A (ja) *	2008-12-12	2010-07-22	Nitto Denko Corp	半硬化状シリコーン樹脂シート
JP5566088B2 (ja) *	2008-12-12	2014-08-06	日東電工株式会社	熱硬化性シリコーン樹脂用組成物
JP5226774B2 (ja) *	2009-07-27	2013-07-03	株式会社東芝	発光装置
JP5767062B2 (ja) *	2010-09-30	2015-08-19	日東電工株式会社	発光ダイオード封止材、および、発光ダイオード装置の製造方法
JP2011077551A (ja) *	2010-12-29	2011-04-14	Panasonic Electric Works Co Ltd	発光装置
JP2011066460A (ja) *	2010-12-29	2011-03-31	Panasonic Electric Works Co Ltd	発光装置
US20140339582A1 (en) *	2011-06-07	2014-11-20	Nobuo Matsumura	Resin sheet laminate, method for manufacturing the same and method for manufacturing led chip with phosphor-containing resin sheet
JP5831013B2 (ja) *	2011-07-28	2015-12-09	日亜化学工業株式会社	発光装置の製造方法および発光装置

2013
- 2013-03-27 JP JP2013066293A patent/JP2014192326A/ja not_active Ceased
- 2013-12-10 KR KR1020157026060A patent/KR20150135286A/ko not_active Application Discontinuation
- 2013-12-10 WO PCT/JP2013/083084 patent/WO2014155850A1/ja active Application Filing
- 2013-12-10 CN CN201380072837.0A patent/CN104995755A/zh active Pending
2014
- 2014-02-14 TW TW103104986A patent/TW201438291A/zh unknown

Also Published As

Publication number	Publication date
JP2014192326A (ja)	2014-10-06
KR20150135286A (ko)	2015-12-02
CN104995755A (zh)	2015-10-21
WO2014155850A1 (ja)	2014-10-02

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