TW201437408A - Film formation device - Google Patents
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
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Abstract
Description
本發明係有關一種成膜裝置。 The present invention relates to a film forming apparatus.
作為在成膜對象物的表面形成膜之成膜裝置，例如採用離子鍍法或濺射法。例如在專利文獻1中，記載有由離子鍍法進行之成膜裝置，該離子鍍法使已蒸發之成膜材料擴散於真空腔室內而使成膜材料附著於成膜對象物的表面。在該專利文獻1所記載之成膜裝置中設置有兩個產生等離子射束之等離子源及藉由該等離子射束使成膜材料蒸發之主爐缸等，以能夠與作為成膜對象物之基板的大型化對應。在該成膜裝置中，將氧作為原料氣體向真空腔室內供給而進行成膜。並且，在專利文獻2所記載之成膜裝置中，向作為成膜對象物之整個基板供給已活化之氧氣而進行成膜。 As a film forming apparatus which forms a film on the surface of a film formation object, the ion plating method or the sputtering method is used, for example. For example, Patent Document 1 describes a film forming apparatus which is formed by an ion plating method in which a vaporized film forming material is diffused in a vacuum chamber to adhere a film forming material to a surface of a film formation object. In the film forming apparatus described in Patent Document 1, two plasma sources that generate a plasma beam and a main hearth that evaporates the film forming material by the plasma beam are provided so as to be capable of forming a film formation target. The size of the substrate corresponds to the size. In this film forming apparatus, oxygen is supplied as a material gas into a vacuum chamber to form a film. Further, in the film forming apparatus described in Patent Document 2, activated oxygen is supplied to the entire substrate as a film formation object to form a film.
專利文獻1：日本特開平11-012725號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 11-012725
專利文獻2：日本特開平03-097853號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 03-097853
在此，隨著成膜對象物的大型化，如上述的專利文獻1所記載之成膜裝置，設置複數個主爐缸等而進行成膜時，有時在成膜對象物上的膜中產生氧不足之區域。或者，有時產生過量地供給氧之區域。對於此，如專利文獻2即使向整個成膜對象物供給已活化之氧氣，有時亦會產生膜中的氧的濃淡。藉由以上，因成膜對象物的位置而在膜質產生參差不一。 In the film forming apparatus described in the above-mentioned Patent Document 1, when a plurality of main furnaces or the like are provided to form a film, the film formation object may be formed in the film on the film formation object. An area where oxygen is insufficient. Alternatively, an area where oxygen is excessively supplied may be generated. In this case, as in Patent Document 2, even if oxygen is activated to the entire film formation object, the concentration of oxygen in the film may occur. According to the above, the film quality is uneven due to the position of the film formation object.
因此，本發明的目的在於提供一種能夠降低因成膜對象物的位置產生之膜質的參差不一之成膜裝置。 Therefore, an object of the present invention is to provide a film forming apparatus which can reduce the difference in film quality due to the position of a film formation object.
本發明之成膜裝置為在真空腔室內使成膜材料的粒子堆積於成膜對象物之成膜裝置，其中，具備：成膜對象物配置部，能夠在真空腔室內配置成膜對象物；堆積部，使成膜材料的粒子堆積於成膜對象物；原料氣體供給部，向真空腔室內供給原料氣體；及活化氣體供給部，對配置於成膜對象物配置部之成膜對象物，局部地供給比原料氣體活化之活化氣體。 The film forming apparatus of the present invention is a film forming apparatus that deposits particles of a film forming material in a film forming object in a vacuum chamber, and includes a film forming object arrangement portion, and the film forming object can be disposed in the vacuum chamber; In the deposition part, the particles of the film formation material are deposited on the film formation object, the material gas supply unit supplies the material gas into the vacuum chamber, and the activation gas supply unit, and the film formation object placed in the film formation object arrangement unit The activation gas activated by the material gas is locally supplied.
本發明之成膜裝置具備向真空腔室內供給原料氣體之原料氣體供給部，並且具備對成膜對象物局部地供給比原料氣體活化之活化氣體之活化氣體供給部。在此，藉由成 膜對象物與堆積部的位置關係，有時在成膜對象物中的一部份中，與其他部份相比供給到膜中之原料變少。對於該種部份，藉由活化氣體供給部局部地供給活化氣體，從而能夠補充膜中的原料。因此，能夠降低因成膜對象物的位置產生之膜中的原料的參差不一。藉由以上，能夠降低因成膜對象物的位置產生之膜質的參差不一。 The film forming apparatus of the present invention includes a material gas supply unit that supplies a material gas into the vacuum chamber, and an activation gas supply unit that partially supplies an activation gas that is activated by the material gas to the film formation object. Here, by In the positional relationship between the film object and the deposition portion, a part of the film formation object may have less raw material supplied to the film than other portions. In such a portion, the activation gas is locally supplied by the activating gas supply portion, whereby the raw material in the film can be replenished. Therefore, it is possible to reduce variations in the raw materials in the film due to the position of the film formation object. As a result, the film quality due to the position of the film formation object can be reduced.
在本發明之成膜裝置中，堆積部可具備：複數個等離子源，在真空腔室內生成等離子射束；複數個主爐缸，填充有成膜材料並向成膜材料導入等離子射束，或作為導入等離子射束之主陽極；及複數個環爐缸，配置於主爐缸的周圍並作為誘導等離子射束之輔助陽極。堆積部由複數個等離子源、複數個主爐缸及複數個環爐缸構成時，藉由與各主爐缸的位置關係，在成膜對象物的一部份中，與其他部份(接近主爐缸之區域)相比膜中的原料變少。對於該種部份，藉由活化氣體供給部局部地供給活化氣體，從而能夠補充膜中的原料。 In the film forming apparatus of the present invention, the deposition unit may include a plurality of plasma sources to generate a plasma beam in the vacuum chamber, and a plurality of main furnaces filled with a film forming material and introduced into the film forming material, or As the main anode for introducing the plasma beam; and a plurality of ring furnaces, arranged around the main hearth and serving as an auxiliary anode for inducing the plasma beam. When the stacking portion is composed of a plurality of plasma sources, a plurality of main hearths, and a plurality of ring hearths, the positional relationship with each of the master hearths is in a part of the film formation object, and the other parts are close to The area of the main hearth is less than the raw material in the film. In such a portion, the activation gas is locally supplied by the activating gas supply portion, whereby the raw material in the film can be replenished.
在本發明之成膜裝置中，活化氣體供給部可向配置於成膜對象物配置部之成膜對象物中之、從成膜材料的粒子的照射方向觀察時相互鄰接之主爐缸之間的位置供給活化氣體。由於成膜對象物中，在相互鄰接之主爐缸之間，膜中的原料容易變少，因此藉由活化氣體供給部對該部份局部地供給活化氣體，從而能夠補充膜中的原料。 In the film forming apparatus of the present invention, the active gas supply unit can be disposed between the main furnaces adjacent to each other when viewed from the direction in which the particles of the film forming material are irradiated to the film formation target of the film formation object arrangement portion. The position is supplied to the activation gas. In the film formation object, the raw material in the film is likely to be reduced between the adjacent master cylinders. Therefore, the activation gas is partially supplied to the portion by the activating gas supply portion, whereby the raw material in the film can be replenished.
在本發明之成膜裝置中，活化氣體供給部可向在配置於成膜對象物配置部之成膜對象物中，從成膜材料的粒子 的照射方向觀察時，比在複數個主爐缸排列之方向上配置於最端部之主爐缸更靠外緣側之位置供給活化氣體。由於成膜對象物中，在比配置於最端部的主爐缸更靠外緣側膜中的原料容易變少，因此藉由活化氣體供給部對該部份局部地供給活化氣體，從而能夠補充膜中的原料。 In the film forming apparatus of the present invention, the activating gas supply unit can be formed from the particles of the film forming material in the film formation object disposed in the film formation object arrangement portion. When the irradiation direction is observed, the activation gas is supplied to a position closer to the outer edge than the main furnace disposed at the most end in the direction in which the plurality of main furnaces are arranged. In the film formation target, the amount of the raw material in the outer edge side film is less than that in the main furnace disposed at the most end portion. Therefore, the activation gas supply portion partially supplies the activating gas to the portion. Supplement the raw materials in the film.
依本發明，能夠降低因成膜對象物的位置產生之膜質的參差不一。 According to the present invention, it is possible to reduce the unevenness of the film quality due to the position of the film formation object.
1‧‧‧成膜裝置 1‧‧‧ film forming device
2‧‧‧堆積部 2‧‧‧Stacking Department
3‧‧‧輸送機構(成膜對象物配置部) 3‧‧‧Conveying mechanism (film forming object arrangement unit)
6‧‧‧環爐缸 6‧‧‧ ring furnace
7‧‧‧等離子源 7‧‧‧plasma source
10‧‧‧真空腔室 10‧‧‧vacuum chamber
10a‧‧‧輸送室(成膜對象物配置部) 10a‧‧‧Transport room (film formation object arrangement unit)
11‧‧‧成膜對象物 11‧‧‧ Film formation object
17‧‧‧主爐缸 17‧‧‧Main hearth
30‧‧‧原料氣體供給部 30‧‧‧Material Gas Supply Department
40‧‧‧活化氣體供給部 40‧‧‧Activated Gas Supply Department
第1圖係表示本發明的成膜裝置的一實施形態的結構之剖面圖。 Fig. 1 is a cross-sectional view showing the structure of an embodiment of a film forming apparatus of the present invention.
第2圖係沿第1圖所示之II-II線之剖面圖。 Fig. 2 is a cross-sectional view taken along line II-II shown in Fig. 1.
第3圖係表示成膜對象物與主爐缸的位置關係之示意圖。 Fig. 3 is a view showing the positional relationship between the film formation object and the main hearth.
以下，參閱附圖對本發明之成膜裝置的一實施形態進行詳細說明。另外，在附圖說明中對相同要件標注相同元件符號，並省略重複說明。 Hereinafter, an embodiment of the film forming apparatus of the present invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and the repeated description is omitted.
第1圖係表示本發明的成膜裝置的一實施形態的結構之剖面圖。第2圖係沿第1圖所示之II-II線之剖面圖。本實施形態的成膜裝置1係所謂用於離子鍍法之離子鍍法 裝置。另外，為了方便說明在第1圖示出XYZ座標系。Y軸方向為後述之成膜對象物被輸送之方向。X軸方向為成膜對象物與後述之爐缸部20對置之方向。Z軸方向為X軸方向與Y軸方向正交之方向。 Fig. 1 is a cross-sectional view showing the structure of an embodiment of a film forming apparatus of the present invention. Fig. 2 is a cross-sectional view taken along line II-II shown in Fig. 1. The film forming apparatus 1 of the present embodiment is a so-called ion plating method for ion plating. Device. In addition, the XYZ coordinate system is shown in FIG. 1 for convenience of description. The Y-axis direction is a direction in which a film formation object to be described later is transported. The X-axis direction is a direction in which the film formation object faces the hearth portion 20 to be described later. The Z-axis direction is a direction in which the X-axis direction is orthogonal to the Y-axis direction.
如第1圖及第2圖所示，本實施形態的成膜裝置1係以成膜對象物的板厚方向成為水平方向之方式，在將成膜對象物直立之狀態或從直立之狀態傾斜之狀態下，成膜對象物被配置於真空腔室內而輸送之所謂立式成膜裝置。此時，X軸方向為水平方向且為成膜對象物的板厚方向，Y軸方向為水平方向，Z軸方向成為鉛垂方向。另一方面，在本發明之成膜裝置的一實施形態中，亦可以係以成膜對象物的板厚方向大致成為鉛垂方向之方式成膜對象物被配置於真空腔室內而輸送之所謂臥式成膜裝置。此時，Z軸及Y軸方向為水平方向，X軸方向成為鉛垂方向且成為板厚方向。另外，在以下實施形態中，以立式的情況為例，對本發明的成膜裝置的一實施形態進行說明。 As shown in Fig. 1 and Fig. 2, the film forming apparatus 1 of the present embodiment is inclined in a state in which the film formation object is erected or in an upright state so that the thickness direction of the film formation object is horizontal. In the state where the film formation object is placed in the vacuum chamber, the so-called vertical film forming apparatus is conveyed. At this time, the X-axis direction is the horizontal direction and is the thickness direction of the film formation object, the Y-axis direction is the horizontal direction, and the Z-axis direction is the vertical direction. On the other hand, in one embodiment of the film forming apparatus of the present invention, the film formation object may be disposed in the vacuum chamber so that the thickness direction of the film formation object is substantially in the vertical direction. Horizontal film forming device. At this time, the Z-axis and the Y-axis direction are the horizontal direction, and the X-axis direction is the vertical direction and becomes the plate thickness direction. Further, in the following embodiments, an embodiment of the film forming apparatus of the present invention will be described by taking a vertical case as an example.
本實施形態的成膜裝置1具備堆積部2、輸送機構(成膜對象物配置部)3、真空腔室10、原料氣體供給部30及活化氣體供給部40。並且，堆積部2具備複數個等離子源7及複數個爐缸部20。 The film forming apparatus 1 of the present embodiment includes a deposition unit 2, a transport mechanism (film formation target arrangement unit) 3, a vacuum chamber 10, a material gas supply unit 30, and an activation gas supply unit 40. Further, the stacking unit 2 includes a plurality of plasma sources 7 and a plurality of furnace portions 20.
真空腔室10具有：輸送室(成膜對象物配置部)10a，用於輸送形成有成膜材料的膜之成膜對象物11；成膜室10b，使成膜材料Ma擴散；及等離子口10c，將從等離子源7照射之等離子射束P容納於真空腔室10。輸 送室10a、成膜室10b及等離子口10c相互連通。輸送室10a沿預定的輸送方向(圖中的箭頭A)(沿Y軸)設定。並且，真空腔室10連接於由導電性材料構成之地電位。真空腔室10中連接有壓力調整裝置(未圖示)，調整真空腔室10內的壓力。壓力調整裝置例如具有渦輪分子泵或低溫泵等減壓部，及測定真空腔室10內的壓力之壓力測定部。 The vacuum chamber 10 has a transfer chamber (film formation object arrangement portion) 10a, a film formation target 11 for transporting a film on which a film formation material is formed, a film formation chamber 10b for diffusing the film formation material Ma, and a plasma port. 10c, the plasma jet P irradiated from the plasma source 7 is housed in the vacuum chamber 10. lose The feeding chamber 10a, the film forming chamber 10b, and the plasma port 10c communicate with each other. The conveying chamber 10a is set in a predetermined conveying direction (arrow A in the drawing) (along the Y axis). Further, the vacuum chamber 10 is connected to a ground potential made of a conductive material. A pressure adjusting device (not shown) is connected to the vacuum chamber 10 to adjust the pressure in the vacuum chamber 10. The pressure adjusting device includes, for example, a pressure reducing unit such as a turbo molecular pump or a cryopump, and a pressure measuring unit that measures the pressure in the vacuum chamber 10 .
成膜室10b具有沿著輸送方向(箭頭A)之一對側壁10j及10k(參閱第2圖)、沿著與輸送方向(箭頭A)交叉之方向(X軸方向)之一對側壁10h及10i(參閱第1圖)、以及與輸送室10a對置之側壁m。側壁10h配置於成膜室10b中之輸送方向A的上遊側(亦即Y軸負方向側)。側壁10i配置於成膜室10b中之輸送方向A的下遊側(亦即Y軸正方向側)。 The film forming chamber 10b has one side wall 10h along one of the conveying direction (arrow A), the side wall 10j and 10k (see FIG. 2), and the direction (X-axis direction) intersecting the conveying direction (arrow A). 10i (see Fig. 1) and a side wall m opposed to the transport chamber 10a. The side wall 10h is disposed on the upstream side in the transport direction A of the film forming chamber 10b (that is, on the negative side in the Y-axis direction). The side wall 10i is disposed on the downstream side of the transport direction A in the film forming chamber 10b (that is, on the positive side in the Y-axis direction).
輸送機構3沿輸送方向A輸送在與成膜材料Ma對置之狀態下保持成膜對象物11之成膜對象物保持構件16。輸送機構3包括設置於輸送室10a內之複數個輸送輥15。輸送輥15沿輸送方向A等間隔配置，並支撐成膜對象物保持構件16且沿輸送方向A輸送。另外，成膜對象物11例如使用玻璃基板或塑料基板等板狀構件。並且，成膜對象物保持構件16例如使用在使成膜對象物11的被成膜面露出之狀態下保持成膜對象物11之輸送托盤等。 The transport mechanism 3 transports the film formation object holding member 16 that holds the film formation object 11 in a state of being opposed to the film formation material Ma in the transport direction A. The conveying mechanism 3 includes a plurality of conveying rollers 15 disposed in the conveying chamber 10a. The conveying rollers 15 are arranged at equal intervals in the conveying direction A, and support the film formation object holding member 16 and convey it in the conveying direction A. In addition, as the film formation object 11, for example, a plate-shaped member such as a glass substrate or a plastic substrate is used. In the film formation target holding member 16, for example, a conveyance tray or the like that holds the film formation object 11 in a state where the film formation surface of the film formation object 11 is exposed is used.
等離子源7為壓力梯度型，且其主體部份經由設置於成膜室10b的側壁10h之等離子口10c連接於成膜室 10b。等離子源7在真空腔室10內生成等離子射束P。等離子源7中生成之等離子射束P從等離子口10c向成膜室10b內射出。等離子射束P藉由設置於等離子口10c之轉向線圈(未圖示)來控制射出方向。 The plasma source 7 is of a pressure gradient type, and its main body portion is connected to the film forming chamber via a plasma port 10c provided in the side wall 10h of the film forming chamber 10b. 10b. The plasma source 7 generates a plasma beam P within the vacuum chamber 10. The plasma beam P generated in the plasma source 7 is emitted from the plasma port 10c into the film forming chamber 10b. The plasma beam P controls the emission direction by a steering coil (not shown) provided in the plasma port 10c.
相對於1個成膜室10b設置有複數個(本實施形態中為2個)等離子源7。複數個等離子源7沿成膜對象物11的長邊方向(Z軸方向)並排配置。複數個等離子源7配置於相同的側壁10h。另外，複數個等離子源7亦可以在相對置之一對側壁10h、10i中交替配置。複數個等離子源7亦可以沿成膜對象物11的厚度方向(X軸方向)並排配置。並且，複數個等離子源7亦可以係沿Z軸方向排列，且沿X軸方向排列的結構。 A plurality of (two in the present embodiment) plasma sources 7 are provided for one film forming chamber 10b. A plurality of plasma sources 7 are arranged side by side in the longitudinal direction (Z-axis direction) of the film formation object 11. A plurality of plasma sources 7 are disposed on the same side wall 10h. In addition, a plurality of plasma sources 7 may be alternately arranged in the opposite pair of side walls 10h, 10i. The plurality of plasma sources 7 may be arranged side by side in the thickness direction (X-axis direction) of the film formation object 11. Further, the plurality of plasma sources 7 may be arranged in the Z-axis direction and arranged in the X-axis direction.
成膜裝置1中設置有複數個(本實施形態中為2個)爐缸部20。1個爐缸部20包括1個主爐缸17及1個環爐缸6。因此，成膜裝置1設置有複數個(本實施形態中為2個)主爐缸17及複數個(本實施形態中為2個)環爐缸6。複數個爐缸部20與複數個等離子源7對應配置於側壁10m。複數個爐缸部20沿成膜對象物11的長邊方向(Z軸方向)並排配置。另外，複數個爐缸部20亦可以沿成膜對象物11的短邊方向(Y軸方向、輸送方向)並排配置。並且，複數個爐缸部20亦可以係沿Z軸方向及Y軸方向這兩個方向排列的結構。 The film forming apparatus 1 is provided with a plurality of (two in the present embodiment) hearth portions 20. The one hearth unit 20 includes one main hearth 17 and one ring hearth 6. Therefore, the film forming apparatus 1 is provided with a plurality of (two in the present embodiment) main furnaces 17 and a plurality of (two in the present embodiment) ring furnaces 6. The plurality of cylinder portions 20 are disposed on the side wall 10m corresponding to the plurality of plasma sources 7. The plurality of cylinder portions 20 are arranged side by side in the longitudinal direction (Z-axis direction) of the film formation object 11. Further, the plurality of cylinder portions 20 may be arranged side by side in the short-side direction (Y-axis direction, transport direction) of the film formation object 11. Further, the plurality of cylinder portions 20 may be arranged in two directions of the Z-axis direction and the Y-axis direction.
爐缸部20具有用於保持成膜材料Ma之機構。爐缸部20設置於真空腔室10的成膜室10b內，且從輸送機構 3觀察時沿X軸方向的負方向配置。爐缸部20具有作為將從等離子源7射出之等離子射束P導入於成膜材料Ma之主陽極或作為導入有從等離子源7射出之等離子射束P之主陽極之主爐缸17。 The hearth portion 20 has a mechanism for holding the film forming material Ma. The hearth portion 20 is disposed in the film forming chamber 10b of the vacuum chamber 10, and from the conveying mechanism 3 When viewed, the negative direction is arranged along the X-axis direction. The hearth portion 20 has a main furnace 17 that is a main anode that introduces the plasma beam P emitted from the plasma source 7 to the film forming material Ma or a main anode that introduces the plasma beam P that is emitted from the plasma source 7.
主爐缸17具有：筒狀的填充部17a，填充有成膜材料Ma並沿X軸方向的正方向延伸；及凸緣部17b，從填充部17a突出。主爐缸17由於相對於具有真空腔室10之地電位保持在正電位，因此吸引等離子射束P。在射入有該等離子射束P之主爐缸17的填充部17a形成有用於填充成膜材料Ma之貫穿孔17c。並且，成膜材料Ma的前端部份在該貫穿孔17c的一端露出於成膜室10b。 The main hearth 17 has a cylindrical filling portion 17a that is filled with the film forming material Ma and extends in the positive direction in the X-axis direction, and a flange portion 17b that protrudes from the filling portion 17a. The main hearth 17 is held at a positive potential with respect to the ground potential having the vacuum chamber 10, thereby attracting the plasma beam P. A through hole 17c for filling the film forming material Ma is formed in the filling portion 17a of the main furnace 17 into which the plasma beam P is incident. Further, the tip end portion of the film forming material Ma is exposed to the film forming chamber 10b at one end of the through hole 17c.
環爐缸6為具有用於誘導等離子射束P之電磁鐵之輔助陽極。環爐缸6配置於保持成膜材料Ma之主爐缸17的填充部17a的周圍。環爐缸6具有環狀的線圈9、環狀的永久磁鐵13及環狀的容器12，且線圈9及永久磁鐵13容納於容器12。環爐缸6依據流過線圈9之電流的大小來控制射入到成膜材料Ma之等離子射束P的方向或射入到主爐缸17之等離子射束P的方向。 The ring hearth 6 is an auxiliary anode having an electromagnet for inducing a plasma beam P. The ring hearth 6 is disposed around the filling portion 17a of the main hearth 17 that holds the film forming material Ma. The ring hearth 6 has an annular coil 9, an annular permanent magnet 13, and an annular container 12, and the coil 9 and the permanent magnet 13 are housed in the container 12. The ring hearth 6 controls the direction of the plasma beam P incident into the film forming material Ma or the direction of the plasma beam P incident into the main hearth 17 in accordance with the magnitude of the current flowing through the coil 9.
在成膜材料Ma中例示有ITO或ZnO等透明導電材料和SiON等絕緣密封材料。成膜材料Ma由絕緣性物質構成時，若向主爐缸17照射等離子射束P，則藉由來自等離子射束P的電流而加熱主爐缸17，且使成膜材料Ma的前端部份蒸發，被等離子射束P離子化之成膜材料粒子Mb在成膜室10b內擴散。並且，成膜材料Ma由導電性 物質構成時，若向主爐缸17照射等離子射束P，則等離子射束P直接射入到成膜材料Ma，且使成膜材料Ma的前端部份加熱蒸發，被等離子射束P離子化之成膜材料粒子Mb在成膜室10b內擴散。在成膜室10b內擴散之成膜材料粒子Mb向成膜室10b的X軸正方向移動，且在輸送室10a內附著於成膜對象物11的表面。另外，成膜材料Ma為成形為預定長度的圓柱形狀之固體物，且複數個成膜材料Ma被一次性填充於爐缸部20的主爐缸17。而且，依據成膜材料Ma的消費，成膜材料Ma從爐缸部20的主爐缸17的X軸負方向側依次擠出，以使最前端側的成膜材料Ma的前端部份保持與主爐缸17上端的預定的位置關係。 A transparent conductive material such as ITO or ZnO and an insulating sealing material such as SiON are exemplified in the film forming material Ma. When the film forming material Ma is made of an insulating material, when the plasma beam P is irradiated to the main furnace cylinder 17, the main furnace cylinder 17 is heated by the current from the plasma beam P, and the front end portion of the film forming material Ma is made. The film-forming material particles Mb which are evaporated by the plasma beam P are evaporated in the film forming chamber 10b. Also, the film forming material Ma is made of conductivity In the case of the material configuration, when the plasma beam P is irradiated to the main furnace cylinder 17, the plasma beam P is directly incident on the film forming material Ma, and the front end portion of the film forming material Ma is heated and evaporated, and ionized by the plasma beam P. The film forming material particles Mb are diffused in the film forming chamber 10b. The film-forming material particles Mb diffused in the film forming chamber 10b move in the positive X-axis direction of the film forming chamber 10b, and adhere to the surface of the film forming object 11 in the transport chamber 10a. Further, the film forming material Ma is a solid body of a cylindrical shape formed into a predetermined length, and a plurality of film forming materials Ma are once filled in the main hearth 17 of the hearth portion 20. Further, according to the consumption of the film forming material Ma, the film forming material Ma is sequentially extruded from the negative X-axis side of the main hearth 17 of the hearth portion 20 so that the front end portion of the film forming material Ma at the foremost end side is kept The predetermined positional relationship of the upper end of the main hearth 17.
原料氣體供給部30向真空腔室10內供給原料氣體。在本實施形態中將氧氣用作原料氣體，但是此外，亦可以採用H20、N2、NH3等。原料氣體供給部30具備：氧氣瓶31，向內部填充作為原料氣體的氧氣；質流控制器(MFC；Mass Flow Controller)32，亦即以預定的流量向成膜室10b內供給氧氣瓶31內的氧氣之氣體流量控制器。氧氣通過質流控制器32及供給管路L1供給到真空腔室10的成膜室10b內。另外，供給管路L1與真空腔室10的連接位置(亦即氧氣的供給口)並無特別限定，但是例如在過於接近成膜對象物11之位置供給原料氣體時，由於原料氣體在腔室內變得不均勻，因此隔開預定距離為較佳。 The material gas supply unit 30 supplies the material gas into the vacuum chamber 10. In the present embodiment, oxygen gas is used as the material gas, but H 2 0, N 2 , NH 3 or the like may also be used. The material gas supply unit 30 includes an oxygen cylinder 31 that internally fills oxygen as a material gas, and a mass flow controller (MFC; Mass Flow Controller) 32 that supplies the oxygen cylinder 31 into the film forming chamber 10b at a predetermined flow rate. Oxygen gas flow controller. Oxygen is supplied into the film forming chamber 10b of the vacuum chamber 10 through the mass flow controller 32 and the supply line L1. In addition, the connection position of the supply line L1 and the vacuum chamber 10 (that is, the supply port of oxygen) is not particularly limited, but, for example, when the material gas is supplied at a position too close to the film formation object 11, the material gas is in the chamber. It becomes uneven, so it is preferable to separate the predetermined distance.
活化氣體供給部40對配置於輸送室10a的輸送機構3之成膜對象物11局部地供給比原料氣體活化之活化氣體。在本實施形態中，由於將氧氣用作原料氣體，因此活化氣體供給部40供給已活化之氧氣。另外，由於只要比原料氣體活化即可，因此例如亦可以將臭氧用作活化氣體。活化氣體供給部40具備：氧氣瓶41，將作為活化之原料氣體的氧氣填充到內部；質流控制器42，亦即以預定的流量向成膜室10b內供給氧氣瓶41內的氧氣之氣體流量控制器；活化部43，使原料氣體活化；管路L2，向成膜室10b內導入在活化部43活化之活化氣體，及噴出部44，向成膜對象物11供給通過管路L2之活化氣體。活化部43只要係能夠使原料氣體活化者，則採用任何方式都可以，例如可藉由射頻(RF)放電、微波放電來使原料氣體活化。在本實施形態中，作為活化方式採用射頻放電，活化部43具備感應室45、感應線圈46及向感應線圈46供給射頻之射頻電源47。 The activation gas supply unit 40 partially supplies the activation gas activated by the material gas to the film formation object 11 of the transport mechanism 3 disposed in the transport chamber 10a. In the present embodiment, since oxygen gas is used as the material gas, the activated gas supply unit 40 supplies the activated oxygen. Further, since it is only required to be activated than the material gas, ozone can also be used as the activating gas, for example. The activation gas supply unit 40 includes an oxygen cylinder 41 that fills the inside as oxygen gas to be activated, and a mass flow controller 42, that is, a gas that supplies oxygen in the oxygen cylinder 41 into the film forming chamber 10b at a predetermined flow rate. The flow controller; the activation unit 43 activates the material gas; the line L2 introduces the activation gas activated by the activation unit 43 into the film formation chamber 10b, and the discharge unit 44, and supplies the film formation object 11 to the passage L2. Activated gas. The activation portion 43 may be any means as long as it can activate the source gas. For example, the source gas can be activated by radio frequency (RF) discharge or microwave discharge. In the present embodiment, radio frequency discharge is employed as the activation method, and the activation unit 43 includes an induction chamber 45, an induction coil 46, and an RF power source 47 that supplies radio frequency to the induction coil 46.
噴出部44對該成膜對象物11的成膜面局部地供給活化氣體。噴出部44可設置於以沿著成膜對象物11的成膜面之方式供給活化氣體之位置。藉此，能夠抑制因成膜材料在管路L2中附著/落下而產生之粒子的產生。另外，噴出部44可配置於與成膜對象物11的成膜面對置之位置。噴出部44的噴出口的形狀並無特別限定，可以係如直線狀噴出活化氣體之形狀，亦可以係如以使活化氣體擴展之方式噴出之形狀。管路L2的佈線並無特別限定，從真空 腔室10的各側壁10h、10i、10j、10k、10m的任一部份進入成膜室10b內即可。而且，在管路L2的成膜室10b內的佈線亦並無特別限定，但盡可能不附著有來自主爐缸17的成膜材料粒子Mb之佈線為較佳。例如，在一對主爐缸17彼此的Z軸方向上的中間位置，可沿Y軸方向延伸管路L2。另外，作為構成管路L2之配管及噴出部44的材料，採用不銹鋼為較佳。 The discharge unit 44 partially supplies the activation gas to the film formation surface of the film formation object 11 . The discharge portion 44 can be provided at a position where the activation gas is supplied along the film formation surface of the film formation object 11. Thereby, generation of particles due to adhesion/dropping of the film formation material in the pipe line L2 can be suppressed. Further, the discharge portion 44 can be disposed at a position facing the film formation of the film formation object 11. The shape of the discharge port of the discharge portion 44 is not particularly limited, and may be a shape in which the activating gas is ejected linearly, or may be a shape that is ejected so that the activation gas expands. The wiring of the pipe L2 is not particularly limited, from the vacuum Any part of each side wall 10h, 10i, 10j, 10k, 10m of the chamber 10 may enter the film forming chamber 10b. Further, the wiring in the film forming chamber 10b of the line L2 is not particularly limited, but it is preferable that the wiring of the film forming material particles Mb from the main hearth 17 is not adhered as much as possible. For example, the pipe line L2 can be extended in the Y-axis direction at an intermediate position in the Z-axis direction of the pair of main furnace cylinders 17. Further, as the material constituting the pipe of the pipe line L2 and the discharge portion 44, stainless steel is preferably used.
在此，參閱第3圖對成膜對象物11中由噴出部44供給活化氣體之位置進行說明。第3圖係從厚度方向(X軸方向)觀察成膜對象物11的成膜面之示意圖。如第3圖所示，藉由成膜對象物11大型化，使用複數個主爐缸17而使氧化物薄膜成膜時，在接近主爐缸17之區域由於等離子的濃度變濃而容易進行作為原料氣體之氧氣的活化。因此，在形成於成膜對象物11之膜中，從成膜材料粒子Mb的照射方向(係主爐缸17與成膜對象物11對置之方向，在此為X軸方向)觀察時，接近主爐缸17之區域供給有已活化之氧氣，從而充份進行氧化。另一方面，由於愈遠離主爐缸17，等離子的濃度變得愈低，因此形成於成膜對象物11之膜中，從照射方向觀察時，愈向徑向(圖中箭頭所示之方向)遠離主爐缸17之區域，氧化程度愈不足。因此，從照射方向觀察時，一個主爐缸17A與另一個主爐缸17B之間的區域中，在各主爐缸17A、17B之間的大致中間位置的區域E1，膜中的氧尤其不足。並且，在成膜對象物11中，從照射方向觀察時，在比主爐 缸17A、17B排列之方向B(在此為Z軸方向)上配置於最端部之主爐缸17A更靠外緣11a側之區域E2，膜中的氧尤其不足。而且，在成膜對象物11中，從照射方向觀察時，在比主爐缸17A、17B排列之方向B上配置於最端部之主爐缸17B更靠外緣11b側之區域E3，膜中的氧尤其不足。另外，本實施形態中，由於主爐缸17為兩個，因此任一主爐缸17A、17B均相當於“在方向B上最端部的主爐缸”。 Here, the position where the activation gas is supplied from the discharge portion 44 in the film formation object 11 will be described with reference to FIG. Fig. 3 is a schematic view showing the film formation surface of the film formation object 11 from the thickness direction (X-axis direction). As shown in FIG. 3, when the film formation object 11 is increased in size and a plurality of main furnaces 17 are used to form an oxide film, the plasma concentration is increased in a region close to the main hearth 17. Activation of oxygen as a raw material gas. Therefore, when the film formed on the film formation object 11 is observed from the irradiation direction of the film formation material particles Mb (the direction in which the main hearth 17 faces the film formation object 11 and is in the X-axis direction here), The activated gas is supplied to the region close to the main hearth 17 to be sufficiently oxidized. On the other hand, since the concentration of the plasma becomes lower as it goes away from the main furnace cylinder 17, it is formed in the film of the film formation object 11, and the radial direction is shown in the direction of the arrow when viewed from the irradiation direction. ) The area away from the main hearth 17 is less oxidized. Therefore, in the region between one main hearth 17A and the other main hearth 17B, the oxygen in the film is particularly insufficient in the region E1 at the substantially intermediate position between the main furnaces 17A, 17B as viewed from the irradiation direction. . Further, in the film formation object 11, when viewed from the irradiation direction, in comparison with the main furnace In the direction B (here, the Z-axis direction) in which the cylinders 17A and 17B are arranged, the main furnace 17A at the most end portion is disposed in the region E2 on the outer edge 11a side, and the oxygen in the film is particularly insufficient. In the film formation target object 11, when viewed from the irradiation direction, the main furnace 17B disposed at the most end portion in the direction B in which the main furnaces 17A and 17B are arranged is located in the region E3 on the outer edge 11b side. The oxygen in the case is especially insufficient. Further, in the present embodiment, since there are two main furnaces 17, one of the main furnaces 17A and 17B corresponds to "the main hearth at the most end in the direction B".
藉由以上，如第1圖及第2圖所示，活化氣體供給部40藉由向成膜對象物11中，膜中的氧容易不足之區域局部地供給活化氣體，亦即對成膜對象物11部份供給活化氣體，從而能夠補充膜中的氧。具體而言，活化氣體供給部40的噴出部44配置於能夠向第3圖所示之區域E1、區域E2、區域E3中的任一(或全部)區域供給活化氣體之位置(如第1圖所示，可以係能夠沿成膜對象物11的成膜面供給活化氣體之位置，亦可以配置於與各區域對置之位置)。亦即，噴出部44在成膜對象物11中從照射方向觀察時，在主爐缸17A與主爐缸17B之間的區域配置於與各主爐缸17A、17B之間的大致中間位置的部份(對應於第3圖的區域E1)對置之位置等，且能夠向該部份供給活化氣體。另外，噴出部44只要在主爐缸17A、17B之間，則均可向任何位置(向活化氣體的照射軸)供給活化氣體。並且，相對於成膜面之供給角度可以不垂直，可以傾斜，亦可以平行於成膜面。而且還可以由複數個噴出 部44供給。並且，供給活化氣體之範圍可設為至少小於1個主爐缸17能夠使成膜材料粒子Mb附著於成膜對象物11之範圍。 As described above, as shown in FIG. 1 and FIG. 2, the activation gas supply unit 40 locally supplies the activation gas to the film formation target 11 in a region where the oxygen in the film is likely to be insufficient, that is, the film formation target. Part 11 is supplied with an activating gas to supplement the oxygen in the membrane. Specifically, the discharge portion 44 of the activated gas supply unit 40 is disposed at a position where the activation gas can be supplied to any (or all) of the region E1, the region E2, and the region E3 shown in FIG. 3 (FIG. 1) As shown in the figure, the position of the activation gas may be supplied along the film formation surface of the film formation object 11 or may be disposed at a position facing the respective regions. In other words, when the film forming object 11 is viewed from the irradiation direction, the region between the main hearth 17A and the main hearth 17B is disposed at a substantially intermediate position between the main furnaces 17A and 17B. The portion (corresponding to the region E1 of Fig. 3) is opposed to the position and the like, and the activation gas can be supplied to the portion. Further, the discharge portion 44 can supply the activating gas to any position (the irradiation axis of the activation gas) as long as it is between the main furnaces 17A and 17B. Further, the supply angle with respect to the film formation surface may not be perpendicular, and may be inclined or may be parallel to the film formation surface. And can also be sprayed from multiple The portion 44 is supplied. Further, the range in which the activating gas is supplied can be set to a range in which at least one of the main furnace cylinders 17 can adhere the film forming material particles Mb to the film formation object 11 .
並且，設置複數個噴出部44時，1個噴出部44配置於在成膜對象物11中，從照射方向觀察時，與比在主爐缸17A、17B排列之方向B上配置於最端部之主爐缸17A更靠外緣11a側之部份(對應於第3圖的區域E2)對置之位置等，且能夠向該部份供給活化氣體。另外，配置於該位置之噴出部44在第2圖中用雙點虛線表示(可以係能夠沿成膜對象物11的成膜面供給活化氣體之位置)。另外，噴出部44只要在比主爐缸17A更靠外緣11a側，則均可向任何位置(向活化氣體的照射軸)供給活化氣體。並且，相對於成膜面之供給角度可以不垂直，可以傾斜，亦可以平行於成膜面。而且，可以在該位置設置複數個噴出部44，並由複數個噴出部44進行供給。同樣，設置複數個噴出部44時，1個噴出部44配置於在成膜對象物11中，從照射方向觀察時，與比在主爐缸17A、17B排列之方向B上配置於最端部之主爐缸17B更靠外緣11b側之部份(對應於第3圖的區域E3)對置之位置等，且能夠向該部份供給活化氣體。另外，配置於該位置之噴出部44在第2圖中用雙點虛線表示(可以係能夠沿成膜對象物11的成膜面供給活化氣體之位置)。另外，噴出部44只要在比主爐缸17B更靠外緣11b側，則均可向任何位置(向活化氣體的照射軸)供給活化氣體。並且，相對 於成膜面之供給角度可以不垂直，可以傾斜，亦可以平行於成膜面。而且，亦可以在該位置設置複數個噴出部44，並由複數個噴出部44進行供給。噴出部44亦可以配置於上述的3個位置中的任意1個位置或2個位置或全部3個位置。 In addition, when a plurality of the ejecting portions 44 are provided, one of the ejecting portions 44 is disposed in the film forming object 11 and is disposed at the most end portion in the direction B in which the main furnaces 17A and 17B are arranged when viewed from the irradiation direction. The main hearth 17A is further disposed at a position opposite to the outer edge 11a side (corresponding to the region E2 of Fig. 3), and the activation gas can be supplied to the portion. In addition, the discharge portion 44 disposed at this position is indicated by a two-dot chain line in the second drawing (may be a position at which the activation gas can be supplied along the film formation surface of the film formation object 11). Further, the discharge portion 44 can supply the activating gas to any position (the irradiation axis of the activating gas) as long as it is on the outer edge 11a side of the main furnace 17A. Further, the supply angle with respect to the film formation surface may not be perpendicular, and may be inclined or may be parallel to the film formation surface. Further, a plurality of discharge portions 44 may be provided at the position and supplied by a plurality of discharge portions 44. Similarly, when a plurality of the ejecting portions 44 are provided, one of the ejecting portions 44 is disposed in the film forming object 11 and is disposed at the end portion in the direction B in which the main furnaces 17A and 17B are arranged when viewed from the irradiation direction. The main hearth 17B is further opposed to the portion on the outer edge 11b side (corresponding to the region E3 of Fig. 3), and the activating gas can be supplied to the portion. In addition, the discharge portion 44 disposed at this position is indicated by a two-dot chain line in the second drawing (may be a position at which the activation gas can be supplied along the film formation surface of the film formation object 11). Further, the discharge portion 44 can supply the activating gas to any position (the irradiation axis of the activating gas) as long as it is on the outer edge 11b side of the main hearth 17B. And relative The supply angle of the film formation surface may not be vertical, may be inclined, or may be parallel to the film formation surface. Further, a plurality of discharge portions 44 may be provided at the position, and may be supplied by a plurality of discharge portions 44. The discharge portion 44 may be disposed at any one of the above three positions or at two positions or all three positions.
接著，對本實施形態之成膜裝置1的作用、效果進行說明。 Next, the action and effect of the film forming apparatus 1 of the present embodiment will be described.
本實施形態之成膜裝置1具備向真空腔室10內供給原料氣體(在此為氧氣)之原料氣體供給部30，並且具備對成膜對象物11局部地供給比原料氣體活化之活化氣體之活化氣體供給部40。在此，藉由成膜對象物11與堆積部2的位置關係，有時在成膜對象物11中的一部份中，與其他部份相比供給到膜中之氧變少。因此，在該部份的膜中的氧不足。或者，供給氧氣以免在該部份的膜中的氧不足時，在其他部份的氧變得過量。在本實施形態之成膜裝置1中，對膜中的氧變少之部份，藉由活化氣體供給部40局部地供給氧的活化氣體，從而能夠補充膜中的氧。因此，無關成膜對象物11的位置，能夠使膜中的氧均勻，藉由以上，能夠降低因成膜對象物11的位置產生之膜質的參差不一。 The film forming apparatus 1 of the present embodiment includes a material gas supply unit 30 that supplies a material gas (here, oxygen gas) into the vacuum chamber 10, and a partial supply of the activation gas that is activated by the material gas to the film formation object 11. The gas supply unit 40 is activated. Here, in the positional relationship between the film formation object 11 and the deposition portion 2, oxygen is supplied to the film in a portion of the film formation object 11 as compared with the other portions. Therefore, there is insufficient oxygen in the film of this portion. Alternatively, oxygen is supplied so as not to cause an excess of oxygen in other portions of the membrane in the portion. In the film forming apparatus 1 of the present embodiment, the oxygen in the film can be replenished by partially supplying oxygen-activated gas to the activated gas supply unit 40 in the portion where the oxygen in the film is reduced. Therefore, irrespective of the position of the film formation object 11, the oxygen in the film can be made uniform, and the film quality due to the position of the film formation object 11 can be reduced.
在本實施形態之成膜裝置1中，堆積部2由複數個等離子源7、複數個主爐缸17及複數個環爐缸6構成。藉由該種結構，能夠對應於成膜對象物11的大型化。在此，從照射方向(X軸方向)觀察時，主爐缸17附近由 於等離子濃度高，因此活化氣體較多，愈遠離主爐缸17，等離子濃度愈低，因此活化氣體變少。因此，藉由與各主爐缸17的位置關係，在成膜對象物11的一部份中，與其他部份(接近主爐缸之區域)相比，膜中的氧變少。對於該種部份，藉由活化氣體供給部40局部地供給活化氣體，從而能夠補充膜中的氧。 In the film forming apparatus 1 of the present embodiment, the deposition unit 2 is composed of a plurality of plasma sources 7, a plurality of main furnaces 17, and a plurality of ring furnaces 6. With such a configuration, it is possible to increase the size of the film formation object 11 . Here, when viewed from the irradiation direction (X-axis direction), the vicinity of the main hearth 17 is Since the plasma concentration is high, the amount of the activated gas is large, and the farther away from the main furnace 17, the lower the plasma concentration, the less the activation gas is. Therefore, in a part of the film formation object 11, the oxygen in the film is less than that of the other parts (the area close to the main hearth) by the positional relationship with each of the main furnaces 17. With respect to such a portion, the activation gas is locally supplied by the activating gas supply unit 40, whereby the oxygen in the film can be replenished.
在本實施形態之成膜裝置1中，活化氣體供給部40從成膜時之成膜材料粒子Mb的照射方向觀察時，在相互鄰接之主爐缸17(17A、17B)之間，向配置於輸送室10a的輸送機構3之成膜對象物11供給活化氣體。由於成膜對象物11中，在相互鄰接之主爐缸17(17A、17B)之間，膜中的氧容易變少，因此藉由活化氣體供給部40對該部份局部地供給活化氣體，從而能夠補充膜中的氧。 In the film forming apparatus 1 of the present embodiment, the activating gas supply unit 40 is disposed between the adjacent master cylinders 17 (17A, 17B) when viewed in the irradiation direction of the film forming material particles Mb at the time of film formation. The film forming object 11 of the transport mechanism 3 of the transport chamber 10a is supplied with an activating gas. In the film formation object 11, the oxygen in the film is likely to be reduced between the adjacent master cylinders 17 (17A, 17B), and therefore the activated gas is partially supplied to the portion by the activating gas supply portion 40. Thereby it is possible to supplement the oxygen in the membrane.
在本實施形態之成膜裝置1中，活化氣體供給部40向配置於輸送室10a的輸送機構3之成膜對象物11中，從成膜時之成膜材料粒子Mb的照射方向觀察時，比在複數個主爐缸17(17A、17B)排列之方向上配置於最端部之主爐缸17A、17B更靠外緣11a、11b側供給活性氣體。由於成膜對象物11中，在比配置於最端部之主爐缸17A、17B更靠外緣11a、11b側，膜中的氧容易變少，因此藉由活化氣體供給部40對該部份局部地供給活化氣體，從而能夠補充膜中的氧。 In the film forming apparatus 1 of the present embodiment, when the activating gas supply unit 40 is observed in the direction of irradiation of the film forming material particles Mb at the time of film formation, the film forming object 11 of the transport mechanism 3 disposed in the transport chamber 10a is observed. The active gas is supplied to the main furnaces 17A and 17B disposed at the most end in the direction in which the plurality of main furnaces 17 (17A, 17B) are arranged, on the outer edges 11a and 11b. In the film formation object 11, the oxygen in the film is less likely to be smaller than the outer edges 11a and 11b of the main furnaces 17A and 17B disposed at the most end portions, and therefore the portion is activated by the activating gas supply unit 40. The activated gas is partially supplied to supplement the oxygen in the membrane.
本發明並不限定於上述實施形態。 The present invention is not limited to the above embodiment.
例如，等離子源7及爐缸部20的個數和配置並不限 定於上述的實施形態，能夠適當変更。即使係該種情況，活化氣體供給部40從照射方向觀察時，可以在相互鄰接之主爐缸17之間，向成膜對象物11供給活化氣體。並且，活化氣體供給部40可向成膜對象物11中，從照射方向觀察時，比在複數個主爐缸17排列之方向上配置於最端部之主爐缸17更靠外緣側供給活化氣體。例如，沿上下方向(Z軸方向)排列有3個主爐缸17時，可向成膜對象物11中，最上側的主爐缸17與中間的主爐缸17之間的部份供給活化氣體，亦可向中間的主爐缸17與最下側的主爐缸17之間的部份供給活化氣體。並且，可向成膜對象物11中，比在最上側的主爐缸17更靠上側之外緣側供給活化氣體，亦可向比最下側的主爐缸17更靠下側之外緣側供給活化氣體。等離子源7及爐缸部20為4個以上的情況亦可設為相同宗旨的結構。 For example, the number and arrangement of the plasma source 7 and the hearth portion 20 are not limited. The embodiment described above can be appropriately modified. In this case, the activated gas supply unit 40 can supply the activation gas to the film formation object 11 between the adjacent master cylinders 17 when viewed from the irradiation direction. Further, the activation gas supply unit 40 can supply the film formation target 11 to the outer edge side of the main furnace 17 disposed at the most end in the direction in which the plurality of main furnaces 17 are arranged, when viewed from the irradiation direction. Activated gas. For example, when three main furnaces 17 are arranged in the vertical direction (Z-axis direction), activation of a portion between the uppermost main furnace 17 and the intermediate main furnace 17 in the film formation object 11 can be supplied. The gas may also supply an activating gas to a portion between the intermediate main hearth 17 and the lowermost main hearth 17. In addition, the activation gas may be supplied to the outer peripheral edge side of the uppermost main furnace 17 in the film formation object 11, or may be lower than the lowermost main furnace 17 The side is supplied with an activating gas. When the plasma source 7 and the hearth portion 20 are four or more, the same configuration may be employed.
並且，上述的成膜裝置1具備藉由離子鍍法使成膜材料粒子Mb堆積之堆積部2，但亦可以採用利用濺射法之堆積部。利用濺射法之堆積部具備作為設置在真空腔室內之成膜材料之靶、及藉由放電產生等離子之電力源，係藉由在真空中在環境氣體下產生等離子而使等離子中的正離子與靶衝突，從而彈出金屬原子，使其附著於成膜對象物11上而進行成膜者。即使採用利用該種濺射法之堆積部時，亦因成膜對象物的位置膜中的原料會產生參差不一，因此藉由活化氣體供給部向原料容易變少之部份局部地供給活化氣體，從而能夠減少膜質的參差不一。 Further, the film forming apparatus 1 described above includes the deposition portion 2 in which the film formation material particles Mb are deposited by ion plating, but a deposition portion by a sputtering method may be employed. The deposition portion by the sputtering method includes a target as a film formation material provided in the vacuum chamber and a power source for generating plasma by discharge, and the positive ions in the plasma are generated by generating plasma under ambient gas in a vacuum. When the target collides with the target, the metal atoms are ejected and adhered to the film formation object 11 to form a film. When the deposition portion by the sputtering method is used, the material in the film at the position of the film formation object is different. Therefore, the activation gas supply portion locally supplies the portion where the raw material is likely to be reduced. Gas, which can reduce the variation of membrane quality.
1‧‧‧成膜裝置 1‧‧‧ film forming device
2‧‧‧堆積部 2‧‧‧Stacking Department
3‧‧‧輸送機構(成膜對象物配置部) 3‧‧‧Conveying mechanism (film forming object arrangement unit)
6‧‧‧環爐缸 6‧‧‧ ring furnace
7‧‧‧等離子源 7‧‧‧plasma source
9‧‧‧線圈 9‧‧‧ coil
10‧‧‧真空腔室 10‧‧‧vacuum chamber
10a‧‧‧輸送室(成膜對象物配置部) 10a‧‧‧Transport room (film formation object arrangement unit)
10b‧‧‧成膜室 10b‧‧‧filming room
10c‧‧‧等離子口 10c‧‧‧ Plasma port
10h‧‧‧側壁 10h‧‧‧ side wall
10i‧‧‧側壁 10i‧‧‧ side wall
10m‧‧‧側壁 10m‧‧‧ side wall
11‧‧‧成膜對象物 11‧‧‧ Film formation object
12‧‧‧容器 12‧‧‧ Container
13‧‧‧永久磁鐵 13‧‧‧ permanent magnet
15‧‧‧輸送輥 15‧‧‧Conveying roller
16‧‧‧成膜對象物保持構件 16‧‧‧ Film-forming object holding member
17‧‧‧主爐缸 17‧‧‧Main hearth
17a‧‧‧填充部 17a‧‧‧Filling Department
17b‧‧‧凸緣部 17b‧‧‧Flange
17c‧‧‧貫穿孔 17c‧‧‧through holes
20‧‧‧爐缸部 20‧‧‧Cylinder Department
30‧‧‧原料氣體供給部 30‧‧‧Material Gas Supply Department
31‧‧‧氧氣瓶 31‧‧‧Oxygen cylinder
32‧‧‧質流控制器 32‧‧‧Flow Controller
40‧‧‧活化氣體供給部 40‧‧‧Activated Gas Supply Department
41‧‧‧氧氣瓶 41‧‧‧Oxygen cylinder
42‧‧‧質流控制器 42‧‧‧Flow Controller
43‧‧‧活化部 43‧‧‧Revitalization Department
44‧‧‧噴出部 44‧‧‧Spray out
45‧‧‧感應室 45‧‧ ‧ induction room
46‧‧‧感應線圈 46‧‧‧Induction coil
47‧‧‧射頻電源 47‧‧‧RF power supply
L1‧‧‧供給管路 L1‧‧‧ supply line
L2‧‧‧管路 L2‧‧‧ pipeline
Ma‧‧‧成膜材料 Ma‧‧‧film forming materials
Mb‧‧‧成膜材料粒子 Mb‧‧‧ film-forming material particles
P‧‧‧等離子射束 P‧‧‧plasma beam
RF電源‧‧‧射頻電源 RF power supply ‧‧‧RF power supply
A‧‧‧輸送方向 A‧‧‧Transport direction
Claims (4)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013068577A JP5951542B2 (en) | 2013-03-28 | 2013-03-28 | Deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201437408A true TW201437408A (en) | 2014-10-01 |
| TWI561665B TWI561665B (en) | 2016-12-11 |
Family
ID=51595361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103104703A TW201437408A (en) | 2013-03-28 | 2014-02-13 | Film formation device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5951542B2 (en) |
| KR (1) | KR101858155B1 (en) |
| CN (1) | CN104073766B (en) |
| TW (1) | TW201437408A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6584982B2 (en) * | 2015-07-21 | 2019-10-02 | 住友重機械工業株式会社 | Deposition equipment |
| JP7448909B2 (en) * | 2019-06-27 | 2024-03-13 | 住友重機械工業株式会社 | Film-forming method and film-forming device |
| JP2022156767A (en) * | 2021-03-31 | 2022-10-14 | 住友重機械工業株式会社 | Film deposition apparatus |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02208207A (en) * | 1989-02-08 | 1990-08-17 | Matsushita Electric Ind Co Ltd | Production of superconducting thin film and apparatus therefor |
| JPH0397853A (en) * | 1989-09-09 | 1991-04-23 | Nkk Corp | Pvd apparatus utilizing laser beam |
| US5508368A (en) * | 1994-03-03 | 1996-04-16 | Diamonex, Incorporated | Ion beam process for deposition of highly abrasion-resistant coatings |
| JP3564677B2 (en) * | 1997-06-20 | 2004-09-15 | 住友重機械工業株式会社 | Metal oxide coating method |
| JPH11130587A (en) * | 1997-10-27 | 1999-05-18 | Gifu Prefecture Kenkyu Kaihatsu Zaidan | Production of nitride semiconductor |
| JP3664033B2 (en) * | 2000-03-29 | 2005-06-22 | セイコーエプソン株式会社 | Ceramic manufacturing method and manufacturing apparatus thereof |
| JP2002030426A (en) * | 2000-07-07 | 2002-01-31 | Sumitomo Heavy Ind Ltd | Method and system for film deposition |
| JP4637556B2 (en) * | 2004-12-01 | 2011-02-23 | 株式会社アルバック | Film forming apparatus, composite wiring film forming apparatus including the film forming apparatus, and thin film manufacturing method |
| KR100800377B1 (en) * | 2006-09-07 | 2008-02-01 | 삼성전자주식회사 | Equipment for chemical vapor deposition |
| JP4901696B2 (en) * | 2007-11-06 | 2012-03-21 | キヤノンアネルバ株式会社 | Deposition equipment |
| KR101204614B1 (en) * | 2008-02-20 | 2012-11-23 | 도쿄엘렉트론가부시키가이샤 | Gas supply device |
| JP2010037620A (en) * | 2008-08-07 | 2010-02-18 | Seiko Epson Corp | Film deposition method, film material and film deposition system |
| JP4823293B2 (en) * | 2008-10-31 | 2011-11-24 | 株式会社シンクロン | Film forming method and film forming apparatus |
| JP2010121144A (en) * | 2008-11-17 | 2010-06-03 | Seiko Epson Corp | Film-forming apparatus |
| US9297072B2 (en) * | 2008-12-01 | 2016-03-29 | Tokyo Electron Limited | Film deposition apparatus |
| JP5543251B2 (en) | 2010-03-23 | 2014-07-09 | スタンレー電気株式会社 | Film forming method using ion plating method and apparatus used therefor |
-
2013
- 2013-03-28 JP JP2013068577A patent/JP5951542B2/en not_active Expired - Fee Related
-
2014
- 2014-02-12 KR KR1020140015876A patent/KR101858155B1/en active IP Right Grant
- 2014-02-13 TW TW103104703A patent/TW201437408A/en unknown
- 2014-03-05 CN CN201410079015.1A patent/CN104073766B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140118721A (en) | 2014-10-08 |
| CN104073766A (en) | 2014-10-01 |
| KR101858155B1 (en) | 2018-05-15 |
| JP5951542B2 (en) | 2016-07-13 |
| CN104073766B (en) | 2018-05-29 |
| JP2014189874A (en) | 2014-10-06 |
| TWI561665B (en) | 2016-12-11 |
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