CN111378944A

CN111378944A - Film forming apparatus, film forming method, and method for manufacturing electronic device

Info

Publication number: CN111378944A
Application number: CN201911124036.XA
Authority: CN
Inventors: 菅原洋纪; 松本行生
Original assignee: Canon Tokki Corp
Current assignee: Canon Tokki Corp
Priority date: 2018-12-27
Filing date: 2019-11-18
Publication date: 2020-07-07
Also published as: JP2020105570A; KR20200081189A; JP7229016B2

Abstract

The invention provides a film forming apparatus, a film forming method and a manufacturing method of an electronic device, which can restrain the quality reduction of sputtering even if sputtering is carried out in a cavity with uneven pressure distribution while a sputtering area is moved. A film forming apparatus (1) has a chamber (10) in which an object to be film formed (6) and a target (2) are disposed, and a moving member (moving stage driving device (12)) that moves a sputtering region (A1) in which sputtering particles are generated from the target (2) within the chamber (10). The film forming apparatus (1) deposits sputtered particles on an object (6) to be film formed while moving a sputtering region (A1) by a moving means. The moving member changes the moving speed of the sputtering region (A1) according to the pressure in the vicinity of the sputtering region (A1).

Description

Film forming apparatus, film forming method, and method for manufacturing electronic device

Technical Field

The invention relates to a film forming apparatus, a film forming method and a method for manufacturing an electronic device.

Background

Sputtering is widely known as a method for forming a thin film made of a material such as a metal or a metal oxide on a film formation object such as a substrate or a laminate formed on a substrate. A film forming apparatus for forming a film by a sputtering method has a structure in which a target made of a film forming material and an object to be film formed are arranged to face each other in a vacuum chamber. When a voltage is applied to the target, plasma is generated in the vicinity of the target, and the ionized inert gas element collides with the target surface to emit sputtering particles from the target surface, and the emitted sputtering particles are deposited on the object to be film-formed to form a film. In addition, there is also known a magnetron sputtering method in which a magnet is disposed on the rear surface of a target (inside the target in the case of a cylindrical target) and the electron density in the vicinity of a cathode is increased by a generated magnetic field to efficiently perform sputtering.

As a conventional film deposition apparatus of this type, for example, an apparatus described in patent document 1 is known. The film forming apparatus of patent document 1 forms a film by moving a target in parallel with a film forming surface of an object to be film formed.

Patent document 1: japanese patent laid-open publication No. 2015-172240

Here, the pressure in the chamber of the film formation apparatus may be uneven. That is, the pressure distribution in the chamber may be uneven, such as a high pressure in the vicinity of the gas inlet through which the sputtering gas is introduced and a low pressure in the vicinity of the exhaust port connected to the vacuum pump. When sputtering is performed while moving the cathode in the chamber as in patent document 1, the sputtering region where the sputtering particles are discharged from the surface of the target also moves relative to the chamber. Therefore, when sputtering is performed while moving the sputtering region under the condition that the pressure distribution in the chamber is not uniform as described above, the pressure around the sputtering region changes during the sputtering process. Since the mean free path of sputtered particles is inversely proportional to the pressure, and is long in a region where the molecular density is low and the pressure is low, and is short in a region where the molecular density is high and the pressure is high, the film formation rate changes depending on the pressure. As a result, the quality of the film formation may be degraded, for example, the film thickness and the film quality may be uneven. However, patent document 1 does not describe control of film formation according to the pressure distribution of the sputtering gas in the chamber.

Disclosure of Invention

The present invention has been made in view of the above problems, and an object of the present invention is to suppress a reduction in quality of sputtering even when sputtering is performed while moving a sputtering region in a chamber having an uneven pressure distribution.

Means for solving the problems

A film forming apparatus according to an aspect of the present invention includes: a chamber in which a target and a film formation object are arranged; and a moving member that moves a sputtering region in which sputtering particles are generated from the target in the chamber, wherein the film deposition apparatus deposits the sputtering particles on the object to be film-deposited while moving the sputtering region by the moving member, and wherein the moving member changes a moving speed of the sputtering region in accordance with a pressure in the vicinity of the sputtering region.

A film forming apparatus according to an aspect of the present invention includes: a chamber in which a target and a film formation object are arranged and which is provided with an exhaust port for exhausting gas from the chamber; and a moving member that moves a sputtering region in which sputtering particles are generated from the target in the chamber, wherein the film deposition apparatus deposits the sputtering particles on the object to be film-deposited while moving the sputtering region by the moving member, and wherein the moving member changes a moving speed of the sputtering region in accordance with a positional relationship between the sputtering region and the exhaust port.

A film forming method according to an aspect of the present invention is a film forming method using a chamber in which a film forming object and a target are arranged, the film forming method including a film forming step of depositing sputtering particles on the film forming object while moving a sputtering region in which the sputtering particles are generated from the target in the chamber, wherein in the film forming step, a moving speed of the sputtering region is changed according to a pressure in a vicinity of the sputtering region.

A film forming method according to an aspect of the present invention is a film forming method using a chamber in which a film forming object and a target are arranged and which is provided with an exhaust port for exhausting gas from the chamber, the film forming method including a film forming step of forming a film by depositing sputtering particles on the film forming object while moving a sputtering region in which the sputtering particles are generated from the target in the chamber, wherein in the film forming step, a moving speed of the sputtering region is changed in accordance with a positional relationship between the sputtering region and the exhaust port.

A method for manufacturing an electronic device according to an aspect of the present invention includes: disposing the object to be film-formed and the target in the chamber so as to face each other; and a film forming step of depositing sputtering particles on the object to be film-formed while moving a sputtering region in which the sputtering particles are generated from the target in the chamber, wherein in the film forming step, a moving speed of the sputtering region is changed in accordance with a pressure in the vicinity of the sputtering region.

A method for manufacturing an electronic device according to an aspect of the present invention includes: disposing the object to be film-formed and the target in a chamber having an exhaust port for exhausting gas so as to face each other; and a film forming step of depositing sputtering particles on the object to be film-formed while moving a sputtering region in which the sputtering particles are generated from the target in the chamber, wherein in the film forming step, a moving speed of the sputtering region is changed in accordance with a positional relationship between the sputtering region and the exhaust port.

Effects of the invention

According to the present invention, even when sputtering is performed while moving a sputtering region in a chamber having an uneven pressure distribution, it is possible to suppress a reduction in quality of sputtering.

Drawings

Fig. 1(a) is a view schematically showing the structure of a film formation apparatus according to embodiment 1, and (b) is a side view of (a).

Fig. 2 is a perspective view schematically showing the structure of the magnet unit.

Fig. 3 is a flowchart showing a flow of changing the moving speed according to embodiment 1.

Fig. 4 is a diagram schematically showing the pressure distribution in the chamber and the moving speed of the sputtering region.

Fig. 5(a) is a view schematically showing the configuration of the film deposition apparatus according to embodiment 2, and (b) to (d) are views showing the movement of the magnet unit.

Fig. 6 is a diagram schematically showing the configuration of a film deposition apparatus according to embodiment 3.

Fig. 7 is a diagram schematically showing a general layer structure of an organic EL element.

Description of the reference numerals

1. A film forming apparatus; 2. a target; 6. an object to be film-formed; 10. a chamber; 12. a mobile station drive device (mobile member); 14. a control unit; a1, sputtering area.

Detailed Description

Hereinafter, embodiments of the present invention will be described in detail. However, the following embodiments are merely exemplary of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, the hardware configuration and software configuration of the device, the process flow, the manufacturing conditions, the dimensions, the materials, the shapes, and the like are not intended to limit the scope of the present invention to these unless otherwise specifically stated.

The present invention is preferably used for forming a thin film, particularly an inorganic thin film, on an object to be film-formed such as a substrate. The present invention can also be used as a film forming apparatus, a method of controlling the same, and a film forming method. The present invention can also be used as an apparatus for manufacturing an electronic device and a method for manufacturing an electronic device. The present invention can also be applied as a program for causing a computer to execute the control method and a storage medium storing the program. The storage medium may also be a non-transitory storage medium that can be read by a computer.

[ embodiment 1]

The basic configuration of the film formation apparatus 1 according to embodiment 1 will be described with reference to the drawings. The film forming apparatus 1 is used for depositing and forming a thin film on a substrate (including a structure in which a laminate is formed on a substrate) in the manufacture of various electronic devices such as a semiconductor device, a magnetic device, and an electronic component, an optical component, and the like. More specifically, the film formation apparatus 1 is preferably used for manufacturing electronic devices such as a light-emitting element, a photoelectric conversion element, and a touch panel. Among them, the film formation apparatus 1 of the present embodiment is particularly preferably used in the production of organic light emitting elements such as organic el (electro luminescence) elements and organic photoelectric conversion elements such as organic thin film solar cells. The electronic device of the present invention includes a display device (for example, an organic EL display device) including a light-emitting element, an illumination device (for example, an organic EL illumination device), and a sensor (for example, an organic CMOS image sensor) including a photoelectric conversion element.

[ organic EL element ]

Fig. 7 schematically shows a general layer structure of an organic EL element. A general organic EL device shown in fig. 7 has a structure in which an anode 601, a hole injection layer 602, a hole transport layer 603, an organic light emitting layer 604, an electron transport layer 605, an electron injection layer 606, and a cathode 607 are sequentially formed on a substrate (object 6 to be film-formed). The film formation apparatus 1 of the present embodiment is preferably used when a laminated film of a metal, a metal oxide, or the like for an electron injection layer and an electrode (cathode) is formed on an organic film by sputtering. Further, the film formation is not limited to the film formation on the organic film, and the film formation can be performed on various surfaces by lamination as long as the combination of materials such as a metal material and an oxide material which can be formed by sputtering is used. The present invention is not limited to film formation using a metal material or an oxide material, and can be applied to film formation using an organic material. Each layer to be formed can be arbitrarily configured by using a mask having a desired mask pattern at the time of film formation.

[ Structure of the device ]

Fig. 1(a) is a schematic diagram showing the structure of a film formation apparatus 1 according to the present embodiment. The film deposition apparatus 1 can accommodate an object 6 to be film-deposited as a substrate inside. The film deposition apparatus 1 includes a chamber 10 in which a target 2 is disposed, and a magnet unit 3 disposed in the chamber 10 at a position facing an object 6 to be film deposited with the target 2 interposed therebetween. In this embodiment, the target 2 has a cylindrical shape, and constitutes a rotary cathode unit 8 (hereinafter, may be simply referred to as "cathode unit 8") functioning as a film formation source together with the magnet unit 3 disposed inside. The term "cylindrical" as used herein does not mean a mathematically strict cylindrical shape, but includes a shape in which a generatrix is not a straight line but a curved line, and a shape in which a cross section perpendicular to a central axis is not a mathematically strict "circle". That is, the target 2 in the present invention may have a substantially cylindrical shape that can rotate about the central axis.

Before the film formation, the object 6 to be film-formed is aligned with the mask 6b and held by the holder 6 a. The holder 6a may be provided with an electrostatic chuck for holding the object 6 to be film-formed by electrostatic force, or may be provided with a clamping mechanism for clamping the object 6 to be film-formed. The holder 6a may further include a magnet plate for attracting the mask 6b from the back surface of the object 6 to be film-formed. In the film forming step, the target 2 of the cathode unit 8 moves in a direction perpendicular to the rotation center axis while rotating around the rotation center axis. On the other hand, unlike the target 2, the magnet unit 3 does not rotate, and generates a leakage magnetic field on the surface side of the target 2 facing the object 6 to be film-formed, and performs sputtering while increasing the electron density near the target 2. The region where the leakage magnetic field is generated is a sputtering region a1 where sputtered particles are generated. The sputtering region a1 of the target 2 moves relative to the chamber 10 together with the movement of the cathode unit 8, and the entire object 6 to be film-formed is sequentially film-formed. Here, the magnet unit 3 does not rotate, but is not limited thereto, and the magnet unit 3 may rotate or swing.

The object 6 to be film-formed held by the holder 6a is horizontally disposed on the top wall 10d side of the chamber 10. The object 6 to be film-formed is carried in from, for example, a gate valve 17 provided on one side wall of the chamber 10 to form a film, and is then carried out from a gate valve 18 provided on the other side wall of the chamber 10 after the film is formed. In the figure, the film formation is performed in a state where the film formation surface of the object to be film-formed 6 is directed downward in the direction of gravity. However, the object 6 may be disposed on the bottom surface side of the chamber 10, the cathode unit 8 may be disposed above the object, and the deposition may be performed downward in a state where the film formation surface of the object 6 is oriented upward in the direction of gravity. Alternatively, the film formation may be performed in a state where the object 6 to be film-formed is standing vertically, that is, in a state where the film formation surface of the object 6 to be film-formed is parallel to the direction of gravity. The object 6 to be film-formed may be carried into the chamber 10 from either the gate valve 17 or the gate valve 18 to form a film, and then may be carried out from the gate valve through which the object passes when the object is carried in after the film is formed.

As shown in fig. 1 a, in the present embodiment,

inlets

41 and 42 connected to a gas introducing member 16 (described later) are disposed at both ends of the chamber 10 in the X-axis direction, and an exhaust port 5 connected to an exhaust member 15 (described later) is disposed at the center.

Fig. 1(b) is a side view of the film formation apparatus 1 of fig. 1(a) viewed from another direction. Both ends of the cathode unit 8 are supported by a support block 210 and an end block 220 fixed to a moving table 230. The cylindrical target 2 of the cathode unit 8 is rotatable, and the magnet unit 3 inside thereof is supported in a fixed state.

The moving table 230 is supported movably along a pair of guide rails 250 via a conveyance guide 240 such as a linear bearing. The cathode unit 8 moves along the guide rail 250 in a movement region facing the object 6 to be film-formed while rotating about the rotation axis N in a state where the rotation axis N extends in the Y-axis direction (an open arrow in fig. 1 a).

The target 2 is driven to rotate by a target driving device 11 as a rotating member. As the target driving device 11, a general driving mechanism having a driving source such as a motor and transmitting power to the target 2 via a power transmission mechanism can be used. The target driving device 11 may be mounted on the support block 210 or the end block 220.

The moving stage 230 is driven along the guide rail 250 by the moving stage driving device 12. In the present embodiment, the cathode unit 8 including the target 2 moves in the chamber 10 by the movement of the moving stage 230, and the sputtering region a1 moves in the chamber 10 along with this movement. Therefore, the moving stage driving device 12 in the present embodiment is a moving member that moves the sputtering region a1 in the chamber 10, and the moving speed of the moving stage 230 is the moving speed of the cathode unit 8. When the magnet unit is fixed to the cathode unit 8, the moving speed of the moving stage 230 is the moving speed of the sputtering region a 1. As will be described later, in the present embodiment, the moving member changes the moving speed of the sputtering region a1 in accordance with the pressure in the vicinity of the sputtering region a 1. As the moving stage driving device 12, various known motion mechanisms such as a screw feeding mechanism using a ball screw or the like that converts a rotational motion of a rotary motor into a driving force, and a linear motor can be used. The moving stage driving device 12 illustrated in the figure moves the target in a direction (X-axis direction) intersecting with the longitudinal direction (Y-axis direction) of the target. The

adhesion preventing plates

261 and 262 may be provided before and after the moving stage 230 that moves the sputtering region in the target moving direction. It is also possible to include the guide rail 250, the moving stage 230, and the control unit 14 in the moving member.

The target 2 functions as a supply source of a film forming material for forming a film on the object 6 to be film formed. Examples of the material of the target 2 include simple metals such as Cu, Al, Ti, Mo, Cr, Ag, Au, and Ni, and alloys or compounds containing these metal elements. Alternatively, the transparent conductive oxide may be ITO, IZO, IWO, AZO, GZO, IGZO, or the like. A layer of the liner 2a made of another material is formed inside the layer on which the film forming material is formed. A power supply 13 is connected to the liner 2a via a target holder (not shown). At this time, the target holder (not shown) and the backing tube 2a function as a cathode to which a bias voltage (for example, a negative voltage) applied from the power supply 13 is applied to the target 2. However, the bias voltage may be applied to the target itself without providing the backing tube. In addition, the chamber 10 is grounded.

The magnet unit 3 forms a magnetic field in a direction toward the object 6 to be film-formed. As shown in fig. 2, magnet unit 3 includes a center magnet 31 extending in a direction parallel to the rotation axis of cathode unit 8, a peripheral magnet 32 surrounding center magnet 31 and having a different polarity from center magnet 31, and a yoke plate 33. Further, the center magnet 31 may extend in a direction intersecting the moving direction of the cathode unit 8. The peripheral magnet 32 includes a pair of

linear portions

32a and 32b extending parallel to the central magnet 31, and

rotating portions

32c and 32d connecting both ends of the

linear portions

32a and 32 b. The magnetic field formed by the magnet unit 3 has magnetic lines of force that return annularly from the magnetic pole of the center magnet 31 toward the

linear portions

32a, 32b of the peripheral magnet 32. Thereby, a circular magnetic field passage extending in the longitudinal direction of the target 2 is formed near the surface of the target 2. The electrons are trapped by the magnetic field, and plasma is concentrated near the surface of the target 2, thereby improving the sputtering efficiency. The region of the surface of the target 2 where the magnetic field of the magnet unit leaks is shown as a sputtering region a1 where sputtered particles are generated in fig. 1 (a). The gas pressure near the sputtering zone a1 affects the flight distance of the sputtered particles. The range in the vicinity of the sputtering region a1 is not necessarily limited to a distance, and may be appropriately determined depending on the influence on the required film formation accuracy.

The chamber 10 is connected to a gas introduction unit 16 and an exhaust unit 15. The gas introduction means 16 and the exhaust means 15 function as pressure adjustment means, and adjust the pressure inside the chamber or maintain the inside of the chamber at a predetermined pressure by introducing and exhausting the sputtering gas under the control of the control unit 14. The sputtering gas is, for example, an inert gas such as argon or a reactive gas such as oxygen or nitrogen. The gas introducing member 16 of the present embodiment introduces the sputtering gas through the introducing

ports

41 and 42 provided at both side portions of the chamber 10. Further, an exhaust means 15 such as a vacuum pump exhausts gas from the inside to the outside of the chamber 10 through the exhaust port 5.

The gas introducing member 16 is constituted by a supply source such as a gas cylinder, a piping system connecting the supply source and the introducing

ports

41 and 42, various vacuum valves provided in the piping system, a mass flow controller, and the like. The gas introducing unit 16 can adjust the gas introduction amount by a flow rate control valve of the mass flow controller. The flow rate control valve is an electrically controllable structure such as an electromagnetic valve. The positions where the

inlets

41 and 42 are disposed are not limited to both side walls of the chamber, and may be one side wall, or a bottom wall or a top wall. The pipe may extend inside the chamber, and the inlet may be opened inside the chamber 10. Further, a plurality of

introduction ports

41 and 42 of the side walls may be arranged in the longitudinal direction (Y-axis direction) of the target 2.

The exhaust unit 15 includes a vacuum pump, a piping system connecting the vacuum pump and the exhaust port 5, and an electrically controllable flow control valve such as an electric valve provided in the piping system, and is configured to be capable of adjusting the amount of exhaust gas by the control valve. The position where the exhaust port 5 is disposed is not limited to the central portion of the bottom wall as illustrated in the figure, and may be an end portion of the bottom wall (a position close to the side wall), a side wall, or a top wall. The pipe may extend inside the chamber, and the exhaust port 5 may be opened inside the chamber 10.

In the illustrated example, the

inlets

41 and 42 are provided on the side wall 10b on the start end side and the side wall 10a on the end side of the moving area in which the cathode unit 8 moves, and the exhaust port 5 is provided on the side of the bottom wall 10c in the center position of the moving area of the moving stage. In the film forming step (sputtering step), a sputtering gas is introduced from the inlet 4 and the film is formed while being discharged from the outlet 5.

The film deposition apparatus 1 includes a pressure sensor 7 provided on the movable stage 230 and capable of acquiring a pressure in the vicinity of the cathode unit 8. That is, the film formation device 1 includes the pressure sensor 7 movable together with the cathode unit 8. In other words, the pressure sensor 7 can move together with the sputtering area a 1. The pressure sensor 7 may be regarded as a pressure acquisition means, or the pressure sensor and the control unit 14 may be regarded as a pressure acquisition means together. The pressure sensor 7 transmits the acquired pressure value to the control section 14. As the pressure sensor 7, various vacuum gauges such as a diaphragm vacuum gauge such as a capacitance manometer, a heat conduction type vacuum gauge such as a pirani vacuum gauge and a thermocouple vacuum gauge, and a quartz crystal friction vacuum gauge can be used. The pressure sensor 7 may measure the pressure in the vicinity of the sputtering region. Therefore, the pressure sensors may be provided on the

adhesion preventing plates

261, 262. Further, a plurality of pressure sensors may be provided in the chamber, and the measurement value of the closest pressure sensor may be acquired based on the position information of the mobile station 230. In this case, the plurality of pressure sensors 7 are preferably arranged in line along the moving path of the cathode unit 8. In the case where the pressure sensor 7 is provided inside the chamber, it is preferably provided at substantially the same height as the sputtering region.

[ film Forming method ]

Next, a film formation method using the film formation apparatus 1 will be described. The film formation method of the present embodiment includes a film formation step (sputtering step). In the film forming step, the target drive device 11 is driven by the control unit 14 to rotate the target 2, and a bias voltage is applied from the power supply 13 to the target 2. The cathode unit 8 is moved from the start end to the end of the movement region by applying a bias voltage to the target 2 while rotating the target 2 and driving the moving stage driving device 12. When a bias voltage is applied to the target 2, plasma is generated intensively in the vicinity of the surface of the target 2 facing the object 6 to be film-formed, and gas ions in a positive ion state in the plasma sputter the target 2, and scattered sputter particles are deposited on the object 6 to be film-formed. As the cathode unit 8 moves, the sputtered particles are sequentially deposited from the upstream side toward the downstream side in the moving direction of the cathode unit 8. Thereby, a film is formed on the film formation object. In this embodiment, the moving speed of the sputtering region a1 is controlled according to the pressure in the vicinity of the sputtering region a1 while moving the sputtering region a1 in the film forming step.

[ traveling speed control ]

Next, the movement speed control in the film forming process of the film forming apparatus 1 according to the present embodiment will be described with reference to the drawings. Fig. 3 is a flowchart showing a flow of changing the moving speed.

After the film formation process is started, in step S101, the control unit 14 acquires a pressure value from the pressure sensor 7. Thereby, the control unit 14 acquires information of the pressure in the vicinity of the sputtering region a 1.

In step S102, the control unit 14 refers to a table and a mathematical expression stored in a storage unit (not shown), and determines an appropriate moving speed of the sputtering region a1 based on the pressure value acquired in step S101.

In step S103, the control unit 14 changes the moving speed of the cathode unit 8 to the moving speed determined in step S103. Thus, sputtering is performed at an appropriate moving speed determined based on the pressure in the vicinity of the cathode unit 8.

In step S104, the control unit 14 determines whether or not the film formation of the object 6 is completed. As a result of the determination, if the film formation is not completed, the process proceeds to step S106, and the film formation is continued while the movement of the cathode unit 8 and the movement speed control are performed.

Fig. 4 shows a pressure p (X) that changes according to the position X of the target in the chamber 10, which is defined by the apparatus configuration of the present embodiment. The moving speed (x) of the target sputtering region a1 in the present embodiment is shown. In the present embodiment, since the position of the sputtering region a1 where sputtered particles are generated is determined according to the position of the target 2, the moving speed of the sputtering region a1 can be considered in the same manner as the moving speed of the target 2.

As shown in fig. 4, the pressure inside the chamber 10 has an uneven distribution, relatively high at a start end side position x1 near the introduction port 42 and a terminal end side position x3 near the introduction port 41, and relatively low at a position x2 at the center portion having the vent 5. In this way, when sputtering is performed while moving the sputtering region a1 under the condition that the pressure distribution in the chamber is not uniform, the pressure around the sputtering region a1 changes during the sputtering process. The mean free path of the sputtered particles discharged from the sputtering region a1 is inversely proportional to the pressure, and is long in a low-pressure region and short in a high-pressure region. Therefore, when the pressure around the sputtering region a1 is low, the amount of sputtered particles reaching the object 6 to be film-formed is relatively large, and the film formation rate is relatively high. On the other hand, when the pressure around the sputtering region a1 is high, the amount of the film to be formed 6 is relatively small, and the film formation rate is relatively small. If the film formation rate is varied in this way, the film thickness and the film quality of the film formed on the object 6 to be film-formed vary.

Therefore, in the present embodiment, as shown in fig. 4, the moving speed V of the sputtering region a1 is changed so as to be small at the start end side x1 and the end side x3 of the moving path of the cathode unit 8 and large at the center portion x 2. That is, when the pressure in the vicinity of the sputtering region a1 is the first pressure P (x2), the sputtering region a1 is moved at the first moving speed V (x 2). When the pressure in the vicinity of the sputtering region a1 is a second pressure P (x3) higher than the first pressure P (x2), the sputtering region a1 is moved at a second moving speed V (x3) lower than the first moving speed V (x 2).

Accordingly, when the pressure in the vicinity of the sputtering region a1 is high and the mean free path of sputtered particles is short, the sputtering region a1 stays in a region opposed to a predetermined region of the object 6 for a long time. Therefore, even if the mean free path of the sputtered particles becomes short, the film deposition rate can be kept substantially constant. Further, when the pressure in the vicinity of the sputtering region a1 is low and the mean free path of sputtered particles is long, the time during which the sputtering region a1 stays in a region opposed to a predetermined region of the object 6 to be film-formed is short. Therefore, even if the mean free path of the sputtered particles is long, the film deposition rate can be kept substantially constant. As described above, according to the present embodiment, even if the pressure distribution of the gas inside the chamber is not uniform, the film formation rate can be made substantially uniform. Therefore, the variation in film thickness and film quality of the film formed on the object 6 to be film-formed can be reduced, and the deterioration in sputtering quality can be suppressed.

In the above example, the pressure sensor 7 sequentially acquires the pressure values, and the control unit 14 determines an appropriate moving speed based on the pressure values, and determines the control conditions of the mobile station driving device 12 as the moving member. However, if an appropriate moving speed is determined in advance for each position of the cathode unit 8 in the X-axis direction, the pressure sensor is not necessarily required. A table or a mathematical expression in which the position of the cathode unit 8 in the X-axis direction and the moving speed are associated with each other may be stored in a storage unit (not shown) in advance. Instead of step S101 and step S102 in the flowchart of fig. 3, the control unit 14 may determine the moving speed based on the information on the position of the target in the X-axis direction and the table or the mathematical expression. The table or the mathematical expression can be generated based on a pressure distribution in the chamber obtained in advance. Alternatively, the pressure in the vicinity of the sputtering region may be acquired based on a pressure distribution in the chamber acquired in advance from the position of the cathode unit 8 in the X-axis direction, and the appropriate moving speed may be determined based on the pressure in the vicinity of the sputtering region. The pressure distribution in the chamber is determined based on the capability of the exhaust member 15, the flow rate control value, the capability of the gas introduction member 16, the flow rate control value, the positional relationship between the exhaust port and the introduction port, and the like, and therefore can be acquired in advance by simulation or measurement using a pressure sensor.

In the illustrated example, the inlet port is disposed on both side walls, and the exhaust port is disposed on the bottom wall. However, regardless of the arrangement of the inlet and the outlet, the moving speed can be appropriately determined by controlling the moving stage driving device 12 by the control unit 14 based on the output value of the pressure sensor, or by programming the control value of the moving stage driving device 12 according to the position in the X-axis direction based on the pressure distribution obtained in advance through actual measurement or simulation.

[ embodiment 2]

Next, embodiment 2 of the present invention will be explained. Hereinafter, differences from embodiment 1 will be mainly described, and the same components will be denoted by the same reference numerals to simplify the description.

Fig. 5(a) shows a film deposition apparatus 1 according to the present embodiment. In the film formation apparatus 1, a planar cathode unit 308 using a flat plate-shaped target 302 is used instead of a rotary cathode unit using a cylindrical target. The planar cathode unit 308 has a target 302 arranged parallel to the object 6 to be film-formed, and a magnet unit 3 as a magnetic field generating member is arranged on the opposite side of the target 302 from the object 6 to be film-formed. Further, a back plate 302a to which power is applied from the power supply 13 is provided on the surface of the target 302 opposite to the film formation object 6. By applying power to the back plate 302a, sputtered particles are discharged from the sputtering region a 1. The planar cathode unit 308 is disposed on the upper surface of the moving stage 230.

In the film forming step, the planar cathode unit 308 moves along the guide rail 250 in a direction (X-axis direction in the figure) orthogonal to the longitudinal direction of the target 302 in a moving region facing the film forming surface of the object 6 to be film formed. The vicinity of the surface of the target 302 facing the object 6 is a sputtering region a1 where the electron density is increased by the magnetic field generated by the magnet unit 3 to generate sputtered particles. In the film forming step, the sputtering area a1 moves along the film forming surface of the object 6 as the planar cathode unit 308 moves, and films are sequentially formed on the object 6.

As shown in fig. 5(b) to 5(d), the magnet unit 3 may be movable relative to the target 302 in the planar cathode unit 308. In this way, the sputtering region a1 can be shifted relative to the target 302, and the utilization efficiency of the target 302 can be improved.

In the present embodiment, as in embodiment 1, the moving speed of the sputtering region a1 is adjusted in accordance with the position of the sputtering region a1 (in the present embodiment, in accordance with the position of the planar cathode unit 308). When the magnet unit 3 is fixed to the target 302, the moving speed of the sputtering region a1 can be considered in the same manner as the moving speed of the planar cathode unit 308. When the magnet unit 3 moves relative to the target 302, the moving speed of the sputtering region a1 can be considered similarly to the combined speed of the moving speed of the planar cathode unit 308 and the moving speed of the magnet unit 3.

Thus, in the present embodiment, even if the pressure distribution of the gas inside the chamber is not uniform, the film formation rate can be kept substantially constant. As a result, the variation in film thickness and film quality of the film formed on the object 6 to be film-formed can be reduced, and the reduction in sputtering quality can be suppressed.

[ embodiment 3]

Next, embodiment 3 of the present invention will be explained. Hereinafter, differences from the above embodiments will be mainly described, and the same components will be denoted by the same reference numerals to simplify the description.

Fig. 6 shows a film deposition apparatus 1 according to the present embodiment. In fig. 5(b) to 5(d), the magnet unit 3 in the planar cathode unit can move relative to the target 302. In this embodiment, the flat plate-shaped target 402 is larger than the object 6 to be film-formed in both the X-axis direction and the Y-axis direction, and is fixedly provided in the chamber 10. The magnet unit 3 as a magnetic field generating member moves relative to the target 402 fixed to the chamber 10 (i.e., relative to the chamber 10). Accordingly, the sputtering region a1 of the target 402, which emits target particles, also moves relative to the object 6 to be film-formed.

The target 402 is disposed at the boundary between the vacuum region and the atmospheric region, and the magnet unit 3 is disposed in the atmosphere outside the chamber 10. That is, as shown in fig. 6, the target 402 is disposed so as to hermetically close the opening 10c1 provided in the bottom wall 10c of the chamber 10. The target 402 faces the internal space of the chamber 10 and faces the object 6 to be film-formed. A back plate 402a to which power is applied from the power source 13 is provided on the surface of the target 402 opposite to the object 6 to be film-formed, and the back plate 402a faces the external space. In addition, although the target 402 is disposed at the boundary portion between the vacuum region and the atmospheric region, the present invention is not limited thereto, and other members may be disposed between the target 402 and the atmospheric region, or the target 402 may be disposed on the bottom wall 10c of the chamber 10.

The magnet unit 3 is disposed outside the chamber 10, and the pressure sensor 7 is disposed inside the chamber 10. The magnet unit 3 is supported by a magnet unit moving device 430 outside the chamber 10 and is movable in the X-axis direction along the target 402. The magnet unit 3 is driven by the magnet driving device 121 driving the magnet unit moving device 430. The magnet unit moving device 430 is a device for linearly guiding the magnet unit 3 in the X-axis direction, and is configured by a moving table for supporting the magnet unit 3, a guide such as a guide rail for guiding the moving table, and the like, although not particularly shown. By the movement of the magnet unit 3, the sputtering region a1 moves in the X-axis direction. The pressure sensor 7 is supported by a sensor moving device 450 disposed in the chamber 10 and is movable in the X-axis direction along the target 402. The sensor moving device 450 is also configured by a moving table for supporting the pressure sensor 7, a guide such as a guide rail for guiding the moving table, and the like, as in the magnet unit moving device 430. The magnet unit 3 and the pressure sensor 7 are controlled by the control unit 14 to move, and the control unit 14 acquires the pressure value measured by the pressure sensor 7 at any time.

In the present embodiment, the inlet 42 is disposed on the side wall 10b on the leading end side of the moving area in which the cathode unit 8 moves, and the exhaust port 5 is disposed on the side wall 10a on the trailing end side. Therefore, in the chamber 10, there is a pressure distribution in which the pressure is high in the vicinity of the side wall 10b on the starting end side and is low in the vicinity of the side wall 10a on the terminating end side. The positions and the number of the

introduction ports

41 and 42 and the exhaust ports 51 and 52 are not limited to this example.

In the present embodiment, as in the above-described embodiments, the moving speed of the sputtering region a1 is adjusted in accordance with the position of the sputtering region a1 (in the present embodiment, in accordance with the position of the magnet unit 3). The moving speed of the sputtering area a1 can be considered similarly to the moving speed of the magnet unit 3.

Thus, in the present embodiment, even if the pressure distribution of the gas inside the chamber is not uniform, the film formation rate can be kept substantially constant. As a result, the film thickness and the film quality of the film formed on the object 6 to be film-formed can be reduced from being uneven, and the quality of sputtering can be prevented from being degraded.

[ other embodiments ]

In the above embodiments, the cathode unit 8 and the planar cathode unit 308 are shown as one unit, but a plurality of these units may be disposed inside the chamber. Alternatively, even if there is one of these units, a plurality of targets may be arranged in the unit. In addition, although the above embodiments have shown the case where the moving speed of the sputtering region a1 is adjusted in the film forming step, at least one of the pressure in the chamber 10, the power supplied to the target 2, and the distance (T-S distance) between the target 2 and the object 6 to be film-formed may be adjusted in accordance with the position or the vicinity of the sputtering region a1 in the chamber 10. The constituent elements described in the above embodiments are not limited to the examples of the above embodiments, and may be arbitrarily combined with each other as long as no contradiction occurs.

Claims

1. A film forming apparatus includes:

a chamber in which a target and a film formation object are arranged; and

a moving member that moves a sputtering region in which sputtering particles are generated from the target in the chamber,

the film forming apparatus deposits the sputtering particles on the object to be film formed while moving the sputtering region by the moving member,

it is characterized in that the preparation method is characterized in that,

the moving member changes a moving speed of the sputtering region according to a pressure in the vicinity of the sputtering region.

2. The film forming apparatus according to claim 1,

there is also provided a pressure acquisition means that acquires a pressure in the vicinity of the sputtering region.

3. The film forming apparatus according to claim 2,

the moving member reduces the moving speed of the sputtering region the higher the pressure in the vicinity of the sputtering region is.

4. The film forming apparatus according to claim 2,

the moving member moves the sputtering zone at a first speed when the pressure in the vicinity of the sputtering zone is a first pressure,

the moving member moves the sputtering region at a second speed lower than the first speed when the pressure in the vicinity of the sputtering region is a second pressure higher than the first pressure.

5. The film forming apparatus according to claim 2,

the pressure acquisition means is a pressure sensor.

6. The film forming apparatus according to claim 2,

the pressure acquisition means acquires a pressure in the vicinity of the sputtering region based on a pressure distribution in the chamber acquired in advance.

7. The film forming apparatus according to any one of claims 1 to 6,

the moving member moves the sputtering region by moving the target within the chamber.

8. The film forming apparatus according to claim 7,

the moving member moves the sputtering region by moving the target in a direction intersecting with a longitudinal direction of the target.

9. The film forming apparatus according to claim 7,

the moving means moves the sputtering region by moving a magnetic field generating means disposed opposite to the object to be film-formed with the target interposed therebetween.

10. The film forming apparatus according to any one of claims 1 to 6,

the target is fixed to the chamber so as to face the object to be film-formed, and the moving means moves the sputtering region by moving a magnetic field generating means disposed so as to face the object to be film-formed with the target interposed therebetween.

11. The film forming apparatus according to claim 1,

the target is in the shape of a cylinder,

the film forming apparatus further includes a rotating member for rotating the target.

12. The film forming apparatus according to claim 7,

the target is in the shape of a cylinder,

13. The film forming apparatus according to claim 1,

the target is in the shape of a flat plate.

14. A film forming apparatus includes:

a chamber in which a target and a film formation object are arranged and which is provided with an exhaust port for exhausting gas from the chamber; and

it is characterized in that the preparation method is characterized in that,

the moving member changes the moving speed of the sputtering region according to the positional relationship between the sputtering region and the exhaust port.

15. The film forming apparatus according to claim 14,

the closer the sputtering region is to the exhaust port, the greater the moving speed of the sputtering region.

16. The film forming apparatus according to claim 14,

the chamber further includes an inlet port for introducing the gas into the chamber,

the moving member changes a moving speed of the sputtering region according to a positional relationship between the sputtering region and the introduction port.

17. The film forming apparatus according to claim 16,

the moving member reduces the moving speed of the sputtering region as the sputtering region is closer to the introduction port.

18. The film forming apparatus according to any one of claims 14 to 17,

19. The film forming apparatus according to claim 18,

the target is in the shape of a cylinder,

20. A film forming method using a chamber in which an object to be film formed and a target are arranged,

the film forming method includes a film forming step of depositing sputtering particles on the object to be film formed while moving a sputtering region in which the sputtering particles are generated from the target in the chamber,

in the film forming step, the moving speed of the sputtering region is changed according to the pressure in the vicinity of the sputtering region.

21. A film forming method using a chamber in which a film forming object and a target are arranged and which is provided with an exhaust port for exhausting gas from the chamber,

in the film forming step, the moving speed of the sputtering region is changed according to the positional relationship between the sputtering region and the exhaust port.

22. A method of manufacturing an electronic device, characterized in that,

the manufacturing method of the electronic device includes:

disposing the object to be film-formed and the target in the chamber so as to face each other; and

a film forming step of depositing sputtering particles on the object to be film formed while moving a sputtering region in which the sputtering particles are generated from the target in the chamber,

23. A method of manufacturing an electronic device, characterized in that,

the manufacturing method of the electronic device includes:

disposing the object to be film-formed and the target in a chamber having an exhaust port for exhausting gas so as to face each other; and