TW201424044A - Light-emitting diode package structure and forming method thereof - Google Patents
Light-emitting diode package structure and forming method thereof Download PDFInfo
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- TW201424044A TW201424044A TW101145476A TW101145476A TW201424044A TW 201424044 A TW201424044 A TW 201424044A TW 101145476 A TW101145476 A TW 101145476A TW 101145476 A TW101145476 A TW 101145476A TW 201424044 A TW201424044 A TW 201424044A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Device Packages (AREA)
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Abstract
Description
本發明是有關於一種封裝結構及其製造方法，且特別是有關於一種發光二極體封裝結構及其製造方法。 The present invention relates to a package structure and a method of fabricating the same, and more particularly to a light emitting diode package structure and a method of fabricating the same.
發光二極體(Light-Emitting Diode，LED)是一種半導體元件。早期大多把發光二極體作為指示燈或顯示板的發光元件，但隨著製作發光二極體的技術日新月異，近年來已被大量應用於照明設備中。此外，當燈具利用發光二極體與導光板來發光時，與傳統燈泡光源相較，具有效率高、壽命長、不易損壞等優點。 A Light-Emitting Diode (LED) is a semiconductor component. In the early days, most of the light-emitting diodes were used as the light-emitting elements of the indicator lamps or display panels. However, with the rapid development of the technology for fabricating the light-emitting diodes, they have been widely used in lighting equipment in recent years. In addition, when the luminaire uses the illuminating diode and the light guide plate to emit light, compared with the conventional bulb light source, it has the advantages of high efficiency, long life, and not easy to be damaged.
但是，目前由於發光二極體在發光時，發光二極體晶片所發出的光源有一部分會被基板或殼體所阻擋而無法作為照明的功能，使得發光二極體晶片發出之光源無法被有效率的使用，進而影響發光二極體封裝結構整體的出光效率。 However, at present, when the light-emitting diode is emitting light, a part of the light source emitted by the light-emitting diode chip is blocked by the substrate or the casing and cannot function as an illumination, so that the light source emitted from the light-emitting diode chip cannot be used. The use of efficiency, in turn, affects the overall light extraction efficiency of the LED package structure.
有鑑於此，本發明提供了一種發光二極體封裝結構及其製造方法用以解決先前技術所造成的問題。 In view of this, the present invention provides a light emitting diode package structure and a manufacturing method thereof to solve the problems caused by the prior art.
根據本發明一實施方式，一種發光二極體封裝結構，包含殼體、二導電支架、發光二極體晶片以及透光封裝膠體。殼體包含反射凹槽。二導電支架設置於殼體內，且部 份裸露於反射凹槽中。發光二極體晶片設置於反射凹槽內且分別以導線電性連接至二導電支架，且發光二極體晶片與反射凹槽的底面不接觸並具有一間隙。透光封裝膠體設於反射凹槽內，並覆蓋導線與發光二極體晶片，且填入間隙內。 According to an embodiment of the invention, a light emitting diode package structure includes a housing, two conductive supports, a light emitting diode chip, and a light transmissive encapsulant. The housing contains reflective grooves. Two conductive brackets are disposed in the housing, and the The parts are bare in the reflective groove. The light emitting diode chip is disposed in the reflective groove and electrically connected to the two conductive supports by wires, and the light emitting diode chip does not contact the bottom surface of the reflective groove and has a gap. The light-transmissive encapsulant is disposed in the reflective recess and covers the wire and the LED chip and fills the gap.
在本發明一實施方式中，間隙的垂直距離不小於發光二極體晶片厚度的一半，且使得發光二極體晶片及導線位於透光封裝膠體內部。 In an embodiment of the invention, the vertical distance of the gap is not less than half of the thickness of the light-emitting diode wafer, and the light-emitting diode chip and the wire are located inside the light-transmitting encapsulant.
在本發明一實施方式中，二導電支架之間被絕緣體所隔開。 In an embodiment of the invention, the two conductive supports are separated by an insulator.
在本發明一實施方式中，透光封裝膠體為一含螢光粉膠體。 In an embodiment of the invention, the light transmissive encapsulant is a phosphor-containing colloid.
在本發明一實施方式中，反射凹槽的底面以及內側面具有反射層。 In an embodiment of the invention, the bottom surface and the inner side of the reflective groove have a reflective layer.
根據本發明另一實施方式，一種發光二極體封裝結構之製造方法包含提供一殼體，其中殼體具有一反射凹槽。形成一犧牲層於反射凹槽中。設置發光二極體晶片於犧牲層之頂面，並分別使用導線電性連接對應的導電支架。去除犧牲層，使得發光二極體晶片不與容置凹槽的底面接觸且具有一間隙。填充一透光封裝膠體於容置凹槽內以覆蓋導線與發光二極體晶片，且填入間隙內。 According to another embodiment of the present invention, a method of fabricating a light emitting diode package structure includes providing a housing, wherein the housing has a reflective recess. A sacrificial layer is formed in the reflective recess. The LED chip is disposed on the top surface of the sacrificial layer, and the corresponding conductive brackets are electrically connected by wires respectively. The sacrificial layer is removed such that the light emitting diode chip does not contact the bottom surface of the accommodating recess and has a gap. A light-transmissive encapsulant is filled in the accommodating recess to cover the wire and the illuminating diode chip, and is filled in the gap.
在本發明另一實施方式中，犧牲層為一聚乙烯醇(PVA)高分子膠體層。 In another embodiment of the invention, the sacrificial layer is a polyvinyl alcohol (PVA) polymer colloid layer.
在本發明另一實施方式中，發光二極體封裝結構之製造方法還包含加熱犧牲層使其分解。在犧牲層分解後，水 洗溶解去除犧牲層。烘烤容置凹槽。 In another embodiment of the present invention, a method of fabricating a light emitting diode package structure further includes heating a sacrificial layer to decompose it. After the sacrificial layer is decomposed, the water Wash and dissolve to remove the sacrificial layer. Bake the groove.
在本發明另一實施方式中，加熱犧牲層之溫度為200℃~300℃。 In another embodiment of the invention, the temperature of the heated sacrificial layer is from 200 ° C to 300 ° C.
在本發明另一實施方式中，間隙的垂直距離不小於發光二極體晶片厚度的一半，且使得發光二極體晶片及導線位於透光封裝膠體內部。 In another embodiment of the invention, the vertical distance of the gap is not less than half of the thickness of the light-emitting diode wafer, and the light-emitting diode wafer and the wire are located inside the light-transmitting encapsulant.
在本發明另一實施方式中，封裝膠體為一含螢光粉膠體。 In another embodiment of the invention, the encapsulant is a phosphor-containing colloid.
在本發明上述實施方式中，由於發光二極體封裝結構的發光二極體晶片與反射凹槽具有一間隙，當發光二極體晶片發光時，反射凹槽可反射發光二極體晶片自底面發出的光源，使其經反射後自發光二極體封裝結構的出光面發出。因此，本發明之發光二極體封裝結構具有較高的發光效率。 In the above embodiment of the present invention, the light-emitting diode package has a gap between the light-emitting diode package and the reflective recess. When the light-emitting diode wafer emits light, the reflective recess can reflect the light-emitting diode wafer from the bottom surface. The emitted light source is reflected and emitted from the light-emitting surface of the self-luminous diode package structure. Therefore, the light emitting diode package structure of the present invention has high luminous efficiency.
以下將以圖式及詳細說明本發明之精神，任何所屬技術領域中具有通常知識者在瞭解本發明之較佳實施例後，當可由本發明所教示之技術加以改變及修飾，其並不脫離本發明之精神與範圍。 The spirit and scope of the present invention will be described in the following detailed description of the preferred embodiments of the present invention, which can be modified and modified by the teachings of the present invention. The spirit and scope of the present invention.
請參照第1圖，其繪示依照本發明一實施方式的一種發光二極體封裝結構100的剖示圖。如第1圖所示，一種發光二極體封裝結構100包含殼體110、二導電支架120、發光二極體晶片130以及透光封裝膠體140。 Please refer to FIG. 1 , which is a cross-sectional view of a light emitting diode package structure 100 according to an embodiment of the invention. As shown in FIG. 1 , a light emitting diode package structure 100 includes a housing 110 , two conductive supports 120 , a light emitting diode chip 130 , and a light transmitting encapsulant 140 .
殼體110形成一反射凹槽112。二導電支架120設置於 殼體110內，且部份裸露於反射凹槽112中。其中，二導電支架120之間被絕緣體122所隔開。在本實施例中，絕緣體122可為由熱固性塑料成型的結構，但不以此為限。 The housing 110 forms a reflective recess 112. Two conductive brackets 120 are disposed on The inside of the housing 110 is partially exposed in the reflective recess 112. The two conductive brackets 120 are separated by an insulator 122. In this embodiment, the insulator 122 may be a structure formed of a thermosetting plastic, but is not limited thereto.
發光二極體晶片130設置於反射凹槽112內。由於二導電支架120部分裸露於反射凹槽112中，因此發光二極體晶片130可分別以導線132與二導電支架120電性連接。在本實施例中，發光二極體晶片130與反射凹槽112的底面不接觸並具有一間隙134。其中，間隙134的垂直距離D1不小於發光二極體晶片130厚度D2的一半，且使得發光二極體晶片130及導線132位於透光封裝膠體140內部，但間隙134的尺寸大小不以此為限。在本實施例中，導線132以及導電支架120可為金、銀或銅材質的導體，但導體的材質不以此為限。 The LED chip 130 is disposed in the reflective recess 112. Since the two conductive brackets 120 are partially exposed in the reflective recesses 112, the LEDs 130 can be electrically connected to the two conductive supports 120 by wires 132, respectively. In the present embodiment, the LED wafer 130 is not in contact with the bottom surface of the reflective recess 112 and has a gap 134. The vertical distance D 1 of the gap 134 is not less than half of the thickness D 2 of the LED wafer 130, and the LED chip 130 and the wire 132 are located inside the transparent encapsulant 140, but the size of the gap 134 is not This is limited. In this embodiment, the wire 132 and the conductive support 120 may be gold, silver or copper conductors, but the material of the conductor is not limited thereto.
另外，透光封裝膠體140設於反射凹槽112內，並覆蓋導線132與發光二極體晶片130，且填入間隙134內。在本實施例中，透光封裝膠體140可為一含螢光粉膠體，但不以此為限。舉例來說，當發光二極體晶片130為藍光發光二極體且填入的透光封裝膠體140為具有黃色螢光粉的封裝膠體時，發光二極體晶片130藉由導線132電性連接於導電支架120的正負極，使發光二極體晶片130能接受到電力而發光。如此一來，發光二極體晶片130發出藍光與黃色螢光粉激發所發出的黃光混光而成白光。設計者亦可依照需求使發光二極體晶片130與透光封裝膠體140可採用其他不同的種類而混光而成所需的光。 In addition, the light-transmissive encapsulant 140 is disposed in the reflective recess 112 and covers the wire 132 and the LED wafer 130 and is filled in the gap 134. In this embodiment, the light-transmitting encapsulant 140 can be a phosphor-containing colloid, but is not limited thereto. For example, when the light emitting diode chip 130 is a blue light emitting diode and the light transmissive encapsulant 140 is filled with a yellow phosphor powder, the LED chip 130 is electrically connected by the wire 132. The positive and negative electrodes of the conductive support 120 enable the light-emitting diode chip 130 to receive electric power and emit light. As a result, the LED chip 130 emits white light by mixing blue light and yellow light emitted by the yellow phosphor powder. The designer can also mix the light-emitting diode chip 130 and the light-transmitting encapsulant 140 by other different kinds to obtain the desired light.
在本實施例中，由於反射凹槽112的底面以及內側面 具有反射層114，且發光二極體晶片130與反射凹槽112的底面具有間隙134。故發光二極體晶片130發光時，自發光二極體晶片130的底面出光的光源(如圖中箭頭所繪示)可經由反射凹槽112的底面反射，並經由反射凹槽112的內側面進行二次反射後，自發光二極體封裝結構100的出光面101出光。因此，發光二極體晶片130全角度所發出的光源經由反射凹槽112的反射後，可同時自發光二極體封裝結構100的出光面101出光，使得發光二極體封裝結構100具有較佳的出光效率，以得到較佳的發光強度。 In this embodiment, due to the bottom surface and the inner side of the reflective groove 112 There is a reflective layer 114, and the light emitting diode wafer 130 has a gap 134 with the bottom surface of the reflective recess 112. Therefore, when the LED chip 130 emits light, a light source (shown by an arrow in the figure) emitted from the bottom surface of the LED chip 130 can be reflected through the bottom surface of the reflective groove 112 and via the inner side of the reflective groove 112. After the secondary reflection, the light-emitting surface 101 of the self-luminous diode package structure 100 emits light. Therefore, after the light source emitted from the full-angle of the LED chip 130 is reflected by the reflective recess 112, the light-emitting surface 101 of the LED package 100 can be simultaneously emitted, so that the LED package 100 is better. Light extraction efficiency for better luminous intensity.
請參照第2圖，其繪示依照本發明一實施方式的一種發光二極體封裝結構的實驗數據圖。如第2圖所示，發光二極體晶片在與反射凹槽的底面具不同垂直高度的間隙(即第1圖中的垂直距離D1)時，分別測量具此發光二極體晶片的封裝結構出光時的發光強度並比較發光二極體晶片直接設置在反射凹槽的底面上(即表示發光二極體晶片與反射凹槽的底面無間隙)的發光強度以得到縱軸所表示的發光功率。由第2圖可知，間隙的垂直距離大致在發光二極體晶片厚度的一半後(即間隙高度大於0.5後)開始有顯著的發光強度的增加(約4%以上的增加)。因此，可得知當間隙的垂直距離不小於發光二極體晶片厚度的一半時，發光二極體封裝結構可具有較高的發光強度。 Please refer to FIG. 2 , which illustrates experimental data of a light emitting diode package structure according to an embodiment of the invention. As shown in FIG. 2, the LED package is respectively packaged with a different height of the vertical height of the bottom surface of the reflective recess (ie, the vertical distance D 1 in FIG. 1 ). The luminous intensity of the structure when the light is emitted is compared with that of the light-emitting diode wafer directly disposed on the bottom surface of the reflective groove (that is, the gap between the light-emitting diode wafer and the bottom surface of the reflective groove) to obtain the light intensity represented by the vertical axis. power. As can be seen from Fig. 2, the vertical distance of the gap starts to increase substantially (after about half of the thickness of the light-emitting diode wafer (i.e., after the gap height is greater than 0.5), and an increase in luminous intensity (about 4% or more) begins. Therefore, it can be known that the light emitting diode package structure can have a higher luminous intensity when the vertical distance of the gap is not less than half the thickness of the light emitting diode wafer.
另外，請參照請參照第2A圖，其繪示依照本發明一實施方式的二種不同色溫發光二極體封裝結構的實驗數據圖。其中，第一發光二極體晶片與第二發光二極體晶片為具不同色溫的發光二極體晶片。由第2A圖可知，間隙的 垂直距離大致在第一發光二極體晶片或第二發光二極體晶片厚度的一半後(即間隙高度大於0.5後)開始有顯著的發光強度的增加(約4%以上的增加)。因此，可得知具不同色溫的發光二極體晶片當間隙的垂直距離不小於發光二極體晶片厚度的一半時，發光二極體封裝結構皆可具有較高的發光強度。 Please refer to FIG. 2A for an experimental data diagram of two different color temperature light emitting diode package structures according to an embodiment of the present invention. The first light emitting diode chip and the second light emitting diode chip are light emitting diode chips having different color temperatures. As can be seen from Figure 2A, the gap The vertical distance begins to have a significant increase in luminous intensity (approximately an increase of more than 4%) substantially after half the thickness of the first light-emitting diode wafer or the second light-emitting diode wafer (i.e., after the gap height is greater than 0.5). Therefore, it can be known that the light-emitting diode package having different color temperatures can have a higher light-emitting intensity when the vertical distance of the gap is not less than half of the thickness of the light-emitting diode wafer.
請參照第3A圖~第3E圖，其繪示依照本發明另一實施方式的一種發光二極體封裝結構100的製造方法的不同步驟流程的示意圖。 Please refer to FIG. 3A to FIG. 3E , which are schematic diagrams showing different steps of a method for manufacturing the LED package structure 100 according to another embodiment of the present invention.
如第3A圖所示，在步驟S1中提供一殼體110，其中殼體110具有一反射凹槽112。之後，形成一犧牲層150於反射凹槽112中。 As shown in FIG. 3A, a housing 110 is provided in step S1, wherein the housing 110 has a reflective recess 112. Thereafter, a sacrificial layer 150 is formed in the reflective recess 112.
在本實施例中，殼體110具有一反射凹槽112。二導電支架120設置於殼體110內，且部份裸露於反射凹槽112中。其中，二導電支架120之間被絕緣體122所隔開。在本實施例中，反射凹槽112的底面以及內側面皆具有反射層114，但不以此為限。另外，犧牲層150設置於反射凹槽112的底面，舉例來說，犧牲層150係以黏著方式固定在反射凹槽112的底面上。在本實施例中，犧牲層150可為一聚乙烯醇(polyvinyl alcohol，PVA)高分子膠體層。在本實施例中，構成犧牲層150的聚乙烯醇(polyvinyl alcohol，PVA)高分子膠體層係由聚乙烯醇(PVA)高分子膠體溶於極性的水後而形成水膠後，再藉由乾燥固化而形成，但不以此為限。 In the present embodiment, the housing 110 has a reflective recess 112. The two conductive brackets 120 are disposed in the housing 110 and partially exposed in the reflective recess 112. The two conductive brackets 120 are separated by an insulator 122. In this embodiment, the bottom surface and the inner side of the reflective groove 112 have a reflective layer 114, but are not limited thereto. In addition, the sacrificial layer 150 is disposed on the bottom surface of the reflective recess 112. For example, the sacrificial layer 150 is adhesively fixed on the bottom surface of the reflective recess 112. In this embodiment, the sacrificial layer 150 may be a polyvinyl alcohol (PVA) polymer colloid layer. In this embodiment, the polyvinyl alcohol (PVA) polymer colloid layer constituting the sacrificial layer 150 is formed by dissolving polyvinyl alcohol (PVA) polymer colloid in polar water to form a water gel, and then It is formed by drying and curing, but is not limited thereto.
如第3B圖所示，在步驟S2中設置一發光二極體晶片 130於犧牲層150之頂面。 As shown in FIG. 3B, a light emitting diode chip is disposed in step S2. 130 is on the top surface of the sacrificial layer 150.
其中，發光二極體晶片130經由固晶製程而固定在犧牲層150的頂面。由於犧牲層150的最大厚度即為發光二極體封裝結構100(以下請參照第1圖)的間隙134的垂直距離D1，因此犧牲層150的最大厚度不小於發光二極體晶片130厚度D2的一半，但不以此為限。 The light emitting diode chip 130 is fixed on the top surface of the sacrificial layer 150 via a die bonding process. Since the maximum thickness of the sacrificial layer 150 is the vertical distance D 1 of the gap 134 of the LED package structure 100 (hereinafter referred to as FIG. 1 ), the maximum thickness of the sacrificial layer 150 is not less than the thickness D of the LED wafer 130 . Half of 2 , but not limited to this.
如第3C圖所示，在步驟S3中分別使用導線132電性連接對應的導電支架120。 As shown in FIG. 3C, the corresponding conductive brackets 120 are electrically connected using the wires 132 in step S3, respectively.
在本實施例中，由於二導電支架120部分裸露於反射凹槽112中，因此導線132可經由打線製程連接發光二極體晶片130與二導電支架120而電性連接，使得外部電源可經由導電支架120自導線132傳遞至發光二極體晶片130而得以通電發光。 In this embodiment, since the two conductive brackets 120 are partially exposed in the reflective recesses 112, the wires 132 can be electrically connected to the LEDs 130 and the two conductive supports 120 via a wire bonding process, so that the external power source can be electrically connected. The holder 120 is transferred from the wire 132 to the light emitting diode chip 130 to be energized to emit light.
如第3D圖所示，在步驟S4中去除該犧牲層150，使得發光二極體晶片130不與該容置凹槽的底面接觸且具有一間隙134。其中，去除犧牲層150的步驟還包含：(1)加熱犧牲層150使其分解。(2)在犧牲層150分解後，水洗溶解去除犧牲層150。(3)烘烤容置凹槽，藉以去除水洗後殘留在容置凹槽的液體，使得容置凹槽得以保持乾燥。在本實施例中，加熱犧牲層150之溫度為200℃~300℃，但不以此為限。 As shown in FIG. 3D, the sacrificial layer 150 is removed in step S4 such that the light emitting diode chip 130 does not contact the bottom surface of the accommodating recess and has a gap 134. The step of removing the sacrificial layer 150 further includes: (1) heating the sacrificial layer 150 to decompose it. (2) After the sacrificial layer 150 is decomposed, the sacrificial layer 150 is removed by water washing. (3) Baking the groove so as to remove the liquid remaining in the accommodating groove after washing, so that the accommodating groove is kept dry. In this embodiment, the temperature of the heating sacrificial layer 150 is 200 ° C ~ 300 ° C, but not limited thereto.
如第3E圖所示，在步驟S5中填充一透光封裝膠體140於容置凹槽內以覆蓋該導線132與發光二極體晶片130，且填入間隙134內。在本實施例中，透光封裝膠體140可為一含螢光粉膠體，但不以此為限。在其他實施例中，透 光封裝膠體140也可為一透明封裝膠體。 As shown in FIG. 3E, a light-transmitting encapsulant 140 is filled in the receiving recess to cover the lead 132 and the LED wafer 130 in the step S5, and is filled in the gap 134. In this embodiment, the light-transmitting encapsulant 140 can be a phosphor-containing colloid, but is not limited thereto. In other embodiments, The light encapsulant 140 can also be a transparent encapsulant.
由上述本發明實施方式可知，應用在本發明之發光二極體封裝結構由於發光二極體封裝結構的發光二極體晶片與反射凹槽具有一間隙，當發光二極體晶片發光時，反射凹槽可反射發光二極體晶片自底面發出的光源，使其經反射後自發光二極體封裝結構的出光面發出。因此，本發明之發光二極體封裝結構具有較高的發光效率。 According to the embodiment of the present invention, the light-emitting diode package of the present invention has a gap between the light-emitting diode chip and the reflective recess of the light-emitting diode package structure, and the light-emitting diode wafer emits light when reflected. The groove can reflect the light source emitted from the bottom surface of the light-emitting diode chip, and is reflected and emitted from the light-emitting surface of the self-light-emitting diode package structure. Therefore, the light emitting diode package structure of the present invention has high luminous efficiency.
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.
100‧‧‧封裝結構 100‧‧‧Package structure
101‧‧‧出光面 101‧‧‧Glossy surface
110‧‧‧殼體 110‧‧‧shell
112‧‧‧反射凹槽 112‧‧‧Reflection groove
114‧‧‧反射層 114‧‧‧reflective layer
120‧‧‧導電支架 120‧‧‧conductive bracket
122‧‧‧絕緣體 122‧‧‧Insulator
130‧‧‧發光二極體晶片 130‧‧‧Light Diode Wafer
132‧‧‧導線 132‧‧‧Wire
134‧‧‧間隙 134‧‧‧ gap
140‧‧‧透光封裝膠體 140‧‧‧Light-permeable encapsulant
150‧‧‧犧牲層 150‧‧‧sacrificial layer
D1‧‧‧垂直距離 D 1 ‧‧‧Vertical distance
D2‧‧‧厚度 D 2 ‧‧‧thickness
S1~S5‧‧‧步驟 S1~S5‧‧‧Steps
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂，所附圖式之說明如下：第1圖係繪示依照本發明一實施方式的一種發光二極體封裝結構的剖示圖。 The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; A section of the diagram.
第2圖係繪示依照本發明一實施方式的一種發光二極體封裝結構的實驗數據圖。 2 is a diagram showing experimental data of a light emitting diode package structure according to an embodiment of the invention.
第2A圖係繪示依照本發明一實施方式的二種不同色溫的發光二極體封裝結構的實驗數據圖。 2A is a graph showing experimental data of two different color temperature light emitting diode package structures according to an embodiment of the present invention.
第3A圖至第3E圖係繪示依照本發明另一實施方式的一種發光二極體封裝結構的製造方法的不同步驟流程的示意圖。 3A to 3E are schematic views showing different steps of a method of manufacturing a light emitting diode package structure according to another embodiment of the present invention.
100‧‧‧封裝結構 100‧‧‧Package structure
101‧‧‧出光面 101‧‧‧Glossy surface
110‧‧‧殼體 110‧‧‧shell
112‧‧‧反射凹槽 112‧‧‧Reflection groove
114‧‧‧反射層 114‧‧‧reflective layer
120‧‧‧導電支架 120‧‧‧conductive bracket
122‧‧‧絕緣體 122‧‧‧Insulator
130‧‧‧發光二極體晶片 130‧‧‧Light Diode Wafer
132‧‧‧導線 132‧‧‧Wire
134‧‧‧間隙 134‧‧‧ gap
140‧‧‧透光封裝膠體 140‧‧‧Light-permeable encapsulant
D1‧‧‧垂直距離 D 1 ‧‧‧Vertical distance
D2‧‧‧厚度 D 2 ‧‧‧thickness
Claims (11)
Priority Applications (2)
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| TW101145476A TW201424044A (en) | 2012-12-04 | 2012-12-04 | Light-emitting diode package structure and forming method thereof |
| CN201310070608.7A CN103855271B (en) | 2012-12-04 | 2013-03-06 | Light emitting diode packaging structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| TW101145476A TW201424044A (en) | 2012-12-04 | 2012-12-04 | Light-emitting diode package structure and forming method thereof |
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| TW201424044A true TW201424044A (en) | 2014-06-16 |
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| TWI306652B (en) * | 2005-10-28 | 2009-02-21 | Chipmos Technologies Inc | Light emitting diode package structure |
| TWM350101U (en) * | 2008-02-01 | 2009-02-01 | Silitek Electronic Guangzhou | LED element |
| CN201274296Y (en) * | 2008-06-20 | 2009-07-15 | 深圳市成光兴实业发展有限公司 | Large power LED encapsulation structure in piranha shape |
| KR101301445B1 (en) * | 2008-12-30 | 2013-08-28 | 엘지디스플레이 주식회사 | Light Emitting Diode Module and Back Light Assembly |
| TW201251153A (en) * | 2011-02-18 | 2012-12-16 | 3M Innovative Properties Co | Flexible light emitting semiconductor device |
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| CN103855271B (en) | 2016-12-28 |
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