TW201419442A - Electrostatic chuck - Google Patents
Electrostatic chuck Download PDFInfo
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- TW201419442A TW201419442A TW102130662A TW102130662A TW201419442A TW 201419442 A TW201419442 A TW 201419442A TW 102130662 A TW102130662 A TW 102130662A TW 102130662 A TW102130662 A TW 102130662A TW 201419442 A TW201419442 A TW 201419442A
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- insulating layer
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- electrostatic chuck
- heat
- heat blocking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Abstract
Description
本發明涉及半導體制程設備，具體地，涉及用於固定被實施等離子體處理的待加工件的靜電卡盤以及具有該靜電卡盤的等離子體處理裝置。 The present invention relates to a semiconductor process apparatus, and in particular to an electrostatic chuck for fixing a workpiece to be processed subjected to plasma processing and a plasma processing apparatus having the same.
在半導體設備的製造過程中，例如蝕刻、沉積、氧化、濺射等處理過程中，通常會利用等離子體對待加工件(晶片)進行處理。一般地，對於等離子體處理裝置來說，作為生成等離子體的方式，大體上可分為利用電暈(glow)放電或者高頻放電，和利用微波等方式。 In the manufacturing process of a semiconductor device, such as etching, deposition, oxidation, sputtering, etc., the workpiece to be processed (wafer) is usually processed by plasma. Generally, as a plasma processing apparatus, as a method of generating plasma, it can be roughly classified into a method using a glow discharge or a high-frequency discharge, and a method using microwaves.
例如，在高頻放電方式的等離子體處理裝置中，待加工件被置於靜電卡盤之上，所述靜電卡盤通過靜電力來固定所述待加工件。現有的靜電卡盤通常包括第一絕緣層和基體，第一絕緣層中設置有直流電極，由該直流電極對晶片施加靜電力。 For example, in a plasma processing apparatus of a high-frequency discharge type, a member to be processed is placed on an electrostatic chuck, and the electrostatic chuck fixes the workpiece to be processed by an electrostatic force. A conventional electrostatic chuck generally includes a first insulating layer and a substrate, and a DC electrode is disposed in the first insulating layer, and an electrostatic force is applied to the wafer by the DC electrode.
在對待加工件進行等離子化處理的過程中，靜電卡盤需要在縱向上向待加工件傳遞熱量，以提高晶片蝕刻的均勻性，為此目前的等離子體加工處理過程中會在陶瓷材料的第一絕緣層的下方添加第二絕緣層，在第二絕緣層中設置加熱絲等進行加熱。第一絕緣層與第二絕緣層之間通過矽膠粘結在一起。 In the process of plasma processing the workpiece, the electrostatic chuck needs to transfer heat to the workpiece to be processed in the longitudinal direction to improve the uniformity of the etching of the wafer. For this reason, the current plasma processing process will be in the ceramic material. A second insulating layer is added under the insulating layer, and a heating wire or the like is provided in the second insulating layer for heating. The first insulating layer and the second insulating layer are bonded together by silicone.
基體中通常包括多個冷卻液流道，用於注入冷卻液對靜電卡盤進行冷卻。 The substrate typically includes a plurality of coolant channels for injecting a coolant to cool the electrostatic chuck.
然而，在加熱晶片的過程中，由於基體通常由鋁製成，其熱傳導率較高，第二絕緣層散發的熱量被冷卻液流道中的 冷卻液帶走，從而使第一絕緣層以及晶片不能快速升溫，影響等離子體處理的工藝效果。 However, in the process of heating the wafer, since the substrate is usually made of aluminum, its thermal conductivity is high, and the heat radiated from the second insulating layer is absorbed in the coolant flow path. The coolant is carried away, so that the first insulating layer and the wafer cannot be heated rapidly, which affects the process effect of the plasma treatment.
因此，研究人員期望研發處一種靜電卡盤結構，其 能減少加熱絲產生的熱量向基體傳導，降低熱量被冷卻液帶走的速度，從而使固定於第一絕緣層上方的晶片快速升溫。 Therefore, researchers expect to develop an electrostatic chuck structure, The heat generated by the heating wire can be reduced to the substrate, and the speed at which the heat is carried away by the cooling liquid can be reduced, so that the wafer fixed above the first insulating layer is rapidly heated.
針對現有技術中的缺陷，本發明的目的是提供一種一種靜電卡盤。 In view of the deficiencies in the prior art, it is an object of the present invention to provide an electrostatic chuck.
根據本發明的一個方面，提供一種靜電卡盤，用於等離子體處理裝置中固定待加工件，其包括：第一絕緣層，用於承載所述待加工件；電極，位於所述第一絕緣層之中，用於連接一可控直流電源以產生靜電力吸附待加工件；第二絕緣層，位於所述第一絕緣層的下方；加熱器，設置於所述第二絕緣層內，所述加熱器產生的熱量能夠通過所述第二絕緣層傳遞至所述第一絕緣層來加熱所述待加工件；基體，位於所述第二絕緣層的下方，用於支撐所述第一絕緣層以及第二絕緣層，所述基體至少包括一冷卻液流道，用於注入冷卻液對靜電卡盤進行冷卻；其特徵在於，所述基體還包括：一阻熱單元，所述阻熱單元設置於所述冷卻液流道的上部且其上表面與所述第二絕緣層的下表面相貼，所述阻熱單元用於降低所述加熱器所產生的熱量向所述冷卻液流道傳遞的速度。 According to an aspect of the invention, there is provided an electrostatic chuck for fixing a workpiece to be processed in a plasma processing apparatus, comprising: a first insulating layer for carrying the workpiece to be processed; an electrode located at the first insulation a layer for connecting a controllable DC power source to generate an electrostatic force to adsorb the workpiece to be processed; a second insulating layer located below the first insulating layer; and a heater disposed in the second insulating layer The heat generated by the heater can be transferred to the first insulating layer through the second insulating layer to heat the workpiece; the substrate is located below the second insulating layer for supporting the first insulation a layer and a second insulating layer, the substrate includes at least one coolant flow channel for injecting a cooling liquid to cool the electrostatic chuck; and the substrate further comprises: a heat blocking unit, the heat blocking unit Provided on an upper portion of the coolant flow path and an upper surface thereof is attached to a lower surface of the second insulating layer, wherein the heat blocking unit is configured to reduce heat generated by the heater to the coolant flow path Speed of transmission .
優選地，所述阻熱單元包括第一阻熱層，所述第一阻熱層由鈦或鈦合金材料製成，所述第一阻熱層貼於所述第二絕緣層的下方。 Preferably, the heat blocking unit comprises a first heat blocking layer, the first heat blocking layer is made of titanium or titanium alloy material, and the first heat blocking layer is attached under the second insulating layer.
優選地，所述阻熱單元還包括第二阻熱層，所述第二阻熱層由鈦或鈦合金材料或鋁材料製成，所述第二阻熱層貼於所述第一阻熱層的下方。 Preferably, the heat blocking unit further includes a second heat blocking layer, the second heat blocking layer is made of titanium or titanium alloy material or aluminum material, and the second heat blocking layer is attached to the first heat blocking layer Below the layer.
優選地，其包括：隔離粘結層，所述隔離粘結層由 伸縮性材料製成，其設置於所述第一絕緣層與所述第二絕緣層之間。 Preferably, it comprises: an isolating bonding layer, and the isolating bonding layer is composed of A stretchable material is disposed between the first insulating layer and the second insulating layer.
優選地，所述隔離粘結層的厚度小於0.3mm。 Preferably, the thickness of the release bonding layer is less than 0.3 mm.
優選地，所述第一絕緣層由陶瓷材料製成。 Preferably, the first insulating layer is made of a ceramic material.
優選地，所述加熱器由一根或多根加熱絲組成，所述一根或多根電加熱絲均勻佈置於所述包裹層中。 Preferably, the heater consists of one or more heating wires, the one or more electric heating wires being evenly arranged in the wrapping layer.
優選地，所述加熱器為一塊加熱板，所述加熱板的尺寸小於所述包裹層尺寸，其嵌於所述包裹層中並向所述包裹層均勻地傳遞熱量。 Preferably, the heater is a heating plate having a size smaller than the size of the wrapping layer, which is embedded in the wrapping layer and uniformly transfers heat to the wrapping layer.
優選地，所述第二絕緣層由氧化鋁材料製成，防止所述加熱器中的交流電流流向所述基體。 Preferably, the second insulating layer is made of an alumina material to prevent an alternating current in the heater from flowing to the substrate.
優選地，所述第一絕緣層由陶瓷材料製成。 Preferably, the first insulating layer is made of a ceramic material.
優選地，所述冷卻液流道還連接一冷卻裝置，所述冷卻裝置向所述腔體提供冷卻液，以降低所述基體的溫度。 Preferably, the coolant flow channel is further connected to a cooling device, and the cooling device supplies cooling liquid to the cavity to lower the temperature of the substrate.
根據本發明的另一個方面，還提供一種用於對待加工件進行等離子體處理的等離子體處理裝置，其包括：對待加工件進行等離子體處理工藝的反應腔室；其特徵在於，還包括：置於所述反應腔室內部、用於固定待加工件的靜電卡盤。 According to another aspect of the present invention, there is also provided a plasma processing apparatus for plasma processing a workpiece, comprising: a reaction chamber for performing a plasma processing process on the workpiece; and characterized by further comprising: An electrostatic chuck for fixing a workpiece to be processed inside the reaction chamber.
本發明通過提供一種靜電卡盤，所述靜電卡盤的基體包括阻熱單元，所述阻熱單元由一個或多個阻熱層組成，所述一個或多個阻熱層由鈦或鈦合金材料製成，通過鈦的阻熱係數較大，從而降低加熱絲產生的熱量被冷卻液帶走的速度，使固定於第一絕緣層上方的晶片快速升溫。 The present invention provides an electrostatic chuck, the base of the electrostatic chuck comprising a thermal block unit, the heat resistant unit being composed of one or more heat resistant layers, the one or more heat resistant layers being made of titanium or titanium alloy The material is made of titanium, and the heat resistance coefficient of the titanium is large, thereby reducing the speed at which the heat generated by the heating wire is carried away by the cooling liquid, so that the wafer fixed above the first insulating layer is rapidly heated.
通過閱讀參照以下附圖對非限制性實施例所作的詳細描述，本發明的其它特徵、目的和優點將會變得更明顯： Other features, objects, and advantages of the present invention will become apparent from the Detailed Description of Description
1‧‧‧第一絕緣層 1‧‧‧First insulation
2‧‧‧電極 2‧‧‧electrode
3‧‧‧第二絕緣層 3‧‧‧Second insulation
4‧‧‧加熱器 4‧‧‧heater
5‧‧‧基體 5‧‧‧ base
51‧‧‧冷卻液流道 51‧‧‧Cooling runner
521‧‧‧第一阻熱層 521‧‧‧First thermal barrier
522‧‧‧第二阻熱層 522‧‧‧second thermal barrier
6‧‧‧交流電源 6‧‧‧AC power supply
7‧‧‧可控直流電源 7‧‧‧Controllable DC power supply
8‧‧‧隔離粘結層 8‧‧‧Isolation bonding layer
圖1示出根據本發明的第一實施例的靜電卡盤的縱截面結構示意 圖；圖2示出根據本發明的第二實施例的靜電卡盤的縱截面結構示意圖；以及圖3示出根據本發明的第三實施例的靜電卡盤的縱截面結構示意圖。 1 shows a schematic longitudinal sectional structure of an electrostatic chuck according to a first embodiment of the present invention. 2 is a schematic longitudinal sectional structural view of an electrostatic chuck according to a second embodiment of the present invention; and FIG. 3 is a schematic longitudinal sectional structural view showing an electrostatic chuck according to a third embodiment of the present invention.
下面結合附圖和實施例對本發明的技術內容進行進一步地說明：圖1示出了根據本發明的第一實施例的靜電卡盤的縱截面結構示意圖。具體地，在圖1所示實施例中，所述靜電卡盤用於等離子體處理裝置中固定待加工件，其包括用於承載待加工件的第一絕緣層1、位於所述第一絕緣層之中的電極2、位於第一絕緣層下方的第二絕緣層3、設置於第二絕緣層中的加熱器4、用於支撐第一絕緣層和第二絕緣層的基體5。 The technical content of the present invention will be further described below with reference to the accompanying drawings and embodiments. Fig. 1 is a schematic longitudinal sectional view showing an electrostatic chuck according to a first embodiment of the present invention. Specifically, in the embodiment shown in FIG. 1, the electrostatic chuck is used for fixing a workpiece to be processed in a plasma processing apparatus, and includes a first insulating layer 1 for carrying a workpiece to be processed, and the first insulating layer The electrode 2 among the layers, the second insulating layer 3 under the first insulating layer, the heater 4 disposed in the second insulating layer, and the substrate 5 for supporting the first insulating layer and the second insulating layer.
更具體地，所述第一絕緣層1用於承載待加工件， 所述第一絕緣層1位於所述第二絕緣層3的上方，所述第一絕緣層1的下表面與所述第二絕緣層3的上表面相貼。優選地，所述第一絕緣層1由陶瓷材料製成，且所述第一絕緣層1的橫截面為圓形。 More specifically, the first insulating layer 1 is used to carry a workpiece to be processed, The first insulating layer 1 is located above the second insulating layer 3, and the lower surface of the first insulating layer 1 is attached to the upper surface of the second insulating layer 3. Preferably, the first insulating layer 1 is made of a ceramic material, and the first insulating layer 1 has a circular cross section.
所述電極2位於所述第一絕緣層之中，其用於連接 一可控直流電源7以產生靜電力吸附待加工件。更具體地，所述電極2嵌入所述第一絕緣層1之中。在一個實施例中，所述電極2由鎢材料製成，其設置於所述第一絕緣層1的中心，且所述電極2的橫截面面積小於所述第一絕緣層1的橫截面面積。 The electrode 2 is located in the first insulating layer for connection A controllable DC power source 7 adsorbs the workpiece to be processed by generating an electrostatic force. More specifically, the electrode 2 is embedded in the first insulating layer 1. In one embodiment, the electrode 2 is made of a tungsten material disposed at the center of the first insulating layer 1, and the cross-sectional area of the electrode 2 is smaller than the cross-sectional area of the first insulating layer 1. .
所述第二絕緣層3位於所述第一絕緣層1和所述基 體5之間，所述第二絕緣層3的上表面與所述第一絕緣層1的下表面相貼，所述第二絕緣層3的下表面與所述基體5的上表面相貼。所述第二絕緣層3內部還包括一加熱器4，所述加熱器4產生 的熱量能夠通過所述第二絕緣層3傳遞至所述第一絕緣層1來加熱所述待加工件。優選地，在本實施例中，所述第二絕緣層3的橫截面為圓形，其橫截面面積與所述第一絕緣層1相一致。所述第二絕緣層3由氧化鋁材料製成，所述第二絕緣層3起電絕緣的作用，以防止所述加熱器4中的交流電流向所述基體5。 The second insulating layer 3 is located at the first insulating layer 1 and the base Between the bodies 5, the upper surface of the second insulating layer 3 is attached to the lower surface of the first insulating layer 1, and the lower surface of the second insulating layer 3 is attached to the upper surface of the substrate 5. The inside of the second insulating layer 3 further includes a heater 4, and the heater 4 generates The heat can be transferred to the first insulating layer 1 through the second insulating layer 3 to heat the workpiece to be processed. Preferably, in the embodiment, the second insulating layer 3 has a circular cross section, and its cross-sectional area coincides with the first insulating layer 1. The second insulating layer 3 is made of an alumina material, and the second insulating layer 3 functions as an electrical insulation to prevent an alternating current in the heater 4 from being directed to the substrate 5.
進一步地，所述加熱器4嵌入所述第二絕緣層3之中，其連接一交流電源6，通過電加熱使所述加熱器4釋放熱量。更具體地，在本實施例中，優選地，所述加熱器4為一根加熱絲，所述加熱絲呈螺旋形均勻佈置於所述第二絕緣層3之中，對外釋放熱量。而在一個變化例中，所述加熱絲也可以由多根加熱絲組成，所述多根加熱絲呈多個等間距的同心圓，分佈於所述第二絕緣層3之中。更進一步地，在另一個變化例中，所述加熱器4也可以是一塊加熱板，所述加熱板的形狀尺寸與所述第二絕緣層3相適應，其嵌入所述第二絕緣層3中縱向對第二絕緣層3傳遞熱量。本領域技術人員理解，這些變化例均可以結合圖1所示實施例予以實現，其並不影響本發明的實質內容，此處不予贅述。 Further, the heater 4 is embedded in the second insulating layer 3, which is connected to an alternating current power source 6, and the heater 4 releases heat by electric heating. More specifically, in the present embodiment, preferably, the heater 4 is a heating wire which is spirally arranged uniformly in the second insulating layer 3 to release heat externally. In one variation, the heating wire may also be composed of a plurality of heating wires which are distributed in a plurality of equally spaced concentric circles and distributed in the second insulating layer 3. Further, in another variation, the heater 4 may also be a heating plate having a shape dimension adapted to the second insulating layer 3, which is embedded in the second insulating layer 3. The medium longitudinal direction transfers heat to the second insulating layer 3. Those skilled in the art understand that these variations can be implemented in conjunction with the embodiment shown in FIG. 1, which does not affect the substance of the present invention and will not be further described herein.
所述基體5位於所述第二絕緣層3的下方，用於支撐所述第一絕緣層1以及第二絕緣層3。具體地，所述基體5優選地由鋁製成，其橫截面呈圓形。更具體地，所述基體5包括至少一個冷卻液流道51，所述冷卻液流道51用於注入冷卻液對所述靜電卡盤進行冷卻。所述冷卻液流道51設置於所述基體5的內部，可以理解的是，所述冷卻液流道51還連接一冷卻裝置(圖1中未示出)，所述冷卻裝置向所述冷卻液流道51提供冷卻液，所述冷卻液流道51則容納冷卻介質，以降低所述基體5的溫度。 The base body 5 is located below the second insulating layer 3 for supporting the first insulating layer 1 and the second insulating layer 3. In particular, the base body 5 is preferably made of aluminum and has a circular cross section. More specifically, the base body 5 includes at least one coolant flow path 51 for injecting a cooling liquid to cool the electrostatic chuck. The coolant flow path 51 is disposed inside the base body 5. It is understood that the coolant flow path 51 is also connected to a cooling device (not shown in FIG. 1), and the cooling device is cooled to the cooling device. The liquid flow path 51 provides a cooling liquid, and the cooling liquid flow path 51 accommodates a cooling medium to lower the temperature of the substrate 5.
更進一步地，所述基體5還包括一阻熱單元，所述阻熱單元設置於所述冷卻液流道51的上部且與所述第二絕緣層3相貼，所述阻熱單元用於降低所述加熱器4所產生的熱量向所述冷卻液流道51傳遞的速度，以加快所述第二絕緣層3升溫的速度。 Further, the base body 5 further includes a heat blocking unit, the heat blocking unit is disposed at an upper portion of the coolant flow path 51 and is in contact with the second insulating layer 3, and the heat blocking unit is used for The speed at which the heat generated by the heater 4 is transferred to the coolant flow path 51 is reduced to speed up the temperature rise of the second insulating layer 3.
更為具體地，所述阻熱單元由第一阻熱層521構成， 所述第一阻熱層521由鈦或鈦合金材料製成，所述第一阻熱層521處於所述基體5的頂部，其貼於所述第二絕緣層3的下方。由於所述第一阻熱層521由鈦製成，鈦的傳熱係數較低，使所述第一阻熱層521下方的冷卻液流道51帶走所述第二絕緣層3中加熱器4釋放的熱量的速度降低，從而所述加熱器4釋放的熱量能夠更多的積聚於所述第二絕緣層3以及所述第二絕緣層3上方的所述第一絕緣層1，使固定於所述第一絕緣層1上方的待加工件迅速升溫。 More specifically, the heat blocking unit is composed of a first heat blocking layer 521. The first heat blocking layer 521 is made of titanium or a titanium alloy material, and the first heat blocking layer 521 is at the top of the base 5 and is attached to the lower side of the second insulating layer 3. Since the first heat blocking layer 521 is made of titanium, the heat transfer coefficient of the titanium is low, so that the coolant flow path 51 under the first heat blocking layer 521 carries away the heater in the second insulating layer 3. 4, the speed of the released heat is reduced, so that the heat released by the heater 4 can be more accumulated in the second insulating layer 3 and the first insulating layer 1 above the second insulating layer 3, so as to be fixed The workpiece to be processed above the first insulating layer 1 is rapidly heated.
圖2示出了根據本發明的第二實施例的靜電卡盤的 縱截面結構示意圖。具體地，所述基體5置於所述第二絕緣層3的下方.，所述基體5包括阻熱單元，與第一實施例不同之處在於：在圖2所示的第二實施例中，所述阻熱單元由第一阻熱層521以及第二阻熱層522構成。其中，所述第一阻熱層521位於所述第二阻熱層522的上方，所述第一阻熱層521貼於所述第二絕緣層3的下方，所述第一阻熱層521和所述第二阻熱層522均位於所述冷卻液流道51的上方。 Figure 2 shows an electrostatic chuck according to a second embodiment of the present invention. Schematic diagram of longitudinal section structure. Specifically, the substrate 5 is placed under the second insulating layer 3. The substrate 5 includes a heat blocking unit, which is different from the first embodiment in the second embodiment shown in FIG. The heat blocking unit is composed of a first heat blocking layer 521 and a second heat blocking layer 522. The first heat blocking layer 521 is located above the second heat blocking layer 522, the first heat blocking layer 521 is attached to the lower side of the second insulating layer 3, and the first heat blocking layer 521 is The second heat blocking layer 522 is located above the coolant flow path 51.
更具體地，在圖2所示實施例中，所述第一阻熱層 521由鈦或鈦合金材料製成，所述第二阻熱層522由鈦或鋁材料中的任一種製成。當所述第二阻熱層522由和第一阻熱層521相同的鈦或鈦合金材料製成時，所述第一阻熱層521與所述第二阻熱層522可以理解為一個整體，相比第一實施例中所述阻熱單元僅由所述第一阻熱層521構成時，所述阻熱單元的厚度增加了，從而更有效地降低所述加熱器4所產生的熱量向所述冷卻液流道11傳遞的速度，增強了所述阻熱單元的作用效果。 More specifically, in the embodiment shown in FIG. 2, the first thermal barrier layer The 521 is made of a titanium or titanium alloy material, and the second heat resistant layer 522 is made of any one of titanium or aluminum materials. When the second heat blocking layer 522 is made of the same titanium or titanium alloy material as the first heat blocking layer 521, the first heat blocking layer 521 and the second heat blocking layer 522 can be understood as a whole. When the heat-insulating unit is composed only of the first heat-resisting layer 521, the thickness of the heat-insulating unit is increased, thereby more effectively reducing the heat generated by the heater 4. The speed of the transfer to the coolant flow path 11 enhances the effect of the heat-insulating unit.
進一步地，在一些變化例中，所述阻熱單元還可以 包括更多阻熱層，例如增加第三阻熱層，所述第三阻熱層的置於所述第二阻熱層522的下方，其同樣可以由鈦或鋁材料中的任一 種製成，通過增加多層相同或不同材料的阻熱層使所述阻熱單元的阻熱效果增加，本領域技術人員理解，這些變化例均可以結合圖2所示實施例予以實現，此處不予贅述。 Further, in some variations, the heat blocking unit can also Including more heat blocking layer, for example, adding a third heat blocking layer, the third heat blocking layer being disposed under the second heat blocking layer 522, which may also be made of any of titanium or aluminum materials. The heat-insulating effect of the heat-insulating unit is increased by adding a plurality of heat-insulating layers of the same or different materials, and those skilled in the art understand that these variations can be realized in combination with the embodiment shown in FIG. Do not repeat them.
圖3示出了根據本發明的第三實施例的靜電卡盤的 縱截面結構示意圖。具體地，在圖3所示實施例中，所述第二絕緣層3置於所述基體5之上，支撐所述第二絕緣層3以及所述第一絕緣層1。所述第一絕緣層1位於所述第二絕緣層3的上方，其中所述第一絕緣層1用於固定待加工件。所述電極2嵌入於所述第一絕緣層1之中。所述基體5包括阻熱單元，所述阻熱單元由第一阻熱層521組成，所述第一阻熱層521貼於所述第二絕緣層3的下方。 Figure 3 shows an electrostatic chuck according to a third embodiment of the present invention. Schematic diagram of longitudinal section structure. Specifically, in the embodiment shown in FIG. 3, the second insulating layer 3 is placed on the substrate 5 to support the second insulating layer 3 and the first insulating layer 1. The first insulating layer 1 is located above the second insulating layer 3, wherein the first insulating layer 1 is used for fixing a workpiece to be processed. The electrode 2 is embedded in the first insulating layer 1. The base body 5 includes a heat blocking unit composed of a first heat blocking layer 521 , and the first heat blocking layer 521 is attached to the lower side of the second insulating layer 3 .
更具體地，與第一實施例不同之處在於：所述第一 絕緣層1與所述第二絕緣層3之間還設有一隔離粘結層8。所述隔離粘結層8由伸縮性材料製成，優選地，所述隔離粘結層8由矽膠製成，其厚度小於0.3mm，用於適應所述第一絕緣層1與所述第二絕緣層3之間不同幅度的熱膨脹，並且所述隔離粘結層8還起到粘結所述第一絕緣層1與所述第二粘結層3的作用。 More specifically, the difference from the first embodiment is that the first An isolation bonding layer 8 is further disposed between the insulating layer 1 and the second insulating layer 3. The insulating bonding layer 8 is made of a stretchable material. Preferably, the insulating bonding layer 8 is made of silicone and has a thickness of less than 0.3 mm for accommodating the first insulating layer 1 and the second. Different degrees of thermal expansion between the insulating layers 3, and the insulating bonding layer 8 also functions to bond the first insulating layer 1 and the second bonding layer 3.
更為具體地，結合上述圖1至圖3所示實施例，本 領域技術人員理解，本發明的靜電卡盤的基體增加一阻熱單元，該阻熱單元的優選地使用鈦材料製成。由於△T=q/G，G=k/d，其中△T為溫度梯度，q為熱流密度(熱流強度)即單位時間內通過等溫面上單位面積的熱量，G為熱導率，k為材料導熱係數，d為所述冷卻液流道至所述第二絕緣層下表面的距離，並且鈦材料的k值為22W/(m．K)相較於其他材料的導熱係數如鋁材料的k值為170W/(m．K)要小很多，因此採用鈦材料可以使所述阻熱單元的阻熱能力加強，並且根據公式G=k/d可知，所述冷卻液流道至所述第二絕緣層下表面的距離與熱導率呈反比，因此增加所述阻熱單元的厚度也可使所述阻熱單元的阻熱能力加強。由於所述阻熱單元的 能力加強，從而使熱量更多地集中在所述第二絕緣層不易流向所述冷卻液流道，因此所述第二絕緣層的熱量也可以快速上升，以達到本發明所需的目的。 More specifically, in combination with the embodiment shown in FIG. 1 to FIG. 3 above, It will be understood by those skilled in the art that the base of the electrostatic chuck of the present invention is provided with a heat resistant unit which is preferably made of a titanium material. Since △T=q/G, G=k/d, where ΔT is the temperature gradient, q is the heat flux density (heat flow intensity), that is, the heat per unit area passing through the isothermal surface per unit time, G is the thermal conductivity, k For the thermal conductivity of the material, d is the distance from the coolant flow path to the lower surface of the second insulating layer, and the k value of the titanium material is 22 W/(m.K) compared to the thermal conductivity of other materials such as aluminum material. The k value is much smaller than 170 W/(m.K), so that the heat resistance of the heat-insulating unit can be enhanced by using a titanium material, and according to the formula G=k/d, the coolant flow path is The distance between the lower surface of the second insulating layer is inversely proportional to the thermal conductivity. Therefore, increasing the thickness of the heat-insulating unit can also enhance the heat-blocking capability of the heat-insulating unit. Due to the heat block unit The ability is enhanced to concentrate more heat on the second insulating layer to flow to the coolant flow path, so that the heat of the second insulating layer can also rise rapidly to achieve the desired purpose of the present invention.
本發明的靜電卡盤可以應用於用於對待加工件進行 等離子體處理工藝的等離子體處理裝置，所述等離子體處理裝置包括一反應腔室和本發明第一實施例或第二實施例的靜電卡盤。 等離子體處理工藝在反應腔室中進行，待加工件被吸附固定於靜電卡盤之上，一起置於反應腔室中。 The electrostatic chuck of the present invention can be applied to a workpiece to be processed A plasma processing apparatus for a plasma processing apparatus, the plasma processing apparatus comprising a reaction chamber and an electrostatic chuck of the first embodiment or the second embodiment of the present invention. The plasma treatment process is carried out in the reaction chamber, and the workpiece to be processed is adsorbed and fixed on the electrostatic chuck and placed together in the reaction chamber.
所述等離子體處理裝置通過使靜電卡盤的基體增加 一阻熱單元，使加熱器釋放的熱量被冷卻液流道帶走的速度變慢，熱量能夠積聚於第二絕緣層以及第一絕緣層中，使待加工件的升溫加快，從而等離子體處理工藝效果得到了提高。 The plasma processing apparatus increases the base of the electrostatic chuck a heat-blocking unit, so that the heat released by the heater is slowed away by the coolant flow path, and heat can be accumulated in the second insulating layer and the first insulating layer, so that the temperature of the workpiece to be processed is accelerated, thereby plasma treatment The process effect has been improved.
以上對本發明的具體實施例進行了描述。需要理解 的是，本發明並不局限於上述特定實施方式，本領域技術人員可以在權利要求的範圍內做出各種變形或修改，這並不影響本發明的實質內容。 The specific embodiments of the present invention have been described above. Need to understand The present invention is not limited to the specific embodiments described above, and various changes or modifications may be made by those skilled in the art without departing from the scope of the invention.
1‧‧‧第一絕緣層 1‧‧‧First insulation
2‧‧‧電極 2‧‧‧electrode
3‧‧‧第二絕緣層 3‧‧‧Second insulation
4‧‧‧加熱器 4‧‧‧heater
5‧‧‧基體 5‧‧‧ base
51‧‧‧冷卻液流道 51‧‧‧Cooling runner
521‧‧‧第一阻熱層 521‧‧‧First thermal barrier
6‧‧‧交流電源 6‧‧‧AC power supply
7‧‧‧可控直流電源 7‧‧‧Controllable DC power supply
Claims (12)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210310949.2A CN103633003B (en) | 2012-08-28 | 2012-08-28 | A kind of electrostatic chuck |
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| Publication Number | Publication Date |
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| TW201419442A true TW201419442A (en) | 2014-05-16 |
| TWI503923B TWI503923B (en) | 2015-10-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW102130662A TW201419442A (en) | 2012-08-28 | 2013-08-27 | Electrostatic chuck |
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| CN (1) | CN103633003B (en) |
| TW (1) | TW201419442A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI674648B (en) * | 2018-09-14 | 2019-10-11 | 大陸商北京北方華創微電子裝備有限公司 | Electrostatic chuck |
| TWI796780B (en) * | 2021-09-07 | 2023-03-21 | 南韓商自適應等離子體技術公司 | An electrostatic chuck with multi heating areas |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952682A (en) * | 2014-03-25 | 2015-09-30 | 中微半导体设备(上海)有限公司 | Plasma treatment chamber and base station thereof |
| KR20190114216A (en) * | 2018-03-29 | 2019-10-10 | 어플라이드 머티어리얼스, 인코포레이티드 | Electrostatic Chuck and Substrate Processing Apparatus |
| CN112289732B (en) * | 2020-10-19 | 2022-11-08 | Tcl华星光电技术有限公司 | Substrate processing apparatus |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3980187B2 (en) * | 1998-07-24 | 2007-09-26 | 日本碍子株式会社 | Semiconductor holding device, its manufacturing method and its use |
| JP2001144167A (en) * | 1999-11-12 | 2001-05-25 | Ngk Insulators Ltd | Semiconductor holder |
| US20020185487A1 (en) * | 2001-05-02 | 2002-12-12 | Ramesh Divakar | Ceramic heater with heater element and method for use thereof |
| US7501605B2 (en) * | 2006-08-29 | 2009-03-10 | Lam Research Corporation | Method of tuning thermal conductivity of electrostatic chuck support assembly |
| JP2008205415A (en) * | 2007-02-16 | 2008-09-04 | Creative Technology:Kk | Electrostatic chuck |
| JP2009152475A (en) * | 2007-12-21 | 2009-07-09 | Shinko Electric Ind Co Ltd | Substrate temperature adjusting-fixing device |
| US8637794B2 (en) * | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
| JP5267603B2 (en) * | 2010-03-24 | 2013-08-21 | Ｔｏｔｏ株式会社 | Electrostatic chuck |
-
2012
- 2012-08-28 CN CN201210310949.2A patent/CN103633003B/en active Active
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI674648B (en) * | 2018-09-14 | 2019-10-11 | 大陸商北京北方華創微電子裝備有限公司 | Electrostatic chuck |
| TWI796780B (en) * | 2021-09-07 | 2023-03-21 | 南韓商自適應等離子體技術公司 | An electrostatic chuck with multi heating areas |
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| Publication number | Publication date |
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| CN103633003B (en) | 2016-12-21 |
| CN103633003A (en) | 2014-03-12 |
| TWI503923B (en) | 2015-10-11 |
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