CN104952682A - Plasma treatment chamber and base station thereof - Google Patents
Plasma treatment chamber and base station thereof Download PDFInfo
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- CN104952682A CN104952682A CN201410113448.4A CN201410113448A CN104952682A CN 104952682 A CN104952682 A CN 104952682A CN 201410113448 A CN201410113448 A CN 201410113448A CN 104952682 A CN104952682 A CN 104952682A
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- base station
- matrix
- cooling passage
- titanium
- insulating barrier
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Abstract
The invention provides a plasma treatment chamber and a base station thereof. The base station comprises a base station base body internally provided with a coolant passage; the upper-layer structure of the base station base body comprises a second insulation layer internally provided with a heater, and a first insulation layer directly arranged above the second insulation layer and internally provided with a static electrode, wherein a plurality of holes are formed in a material layer between the plane where the upper surface of the coolant passage of the base station base body and the lower surface of the second insulation layer. The plasma treatment chamber and the base station thereof provided by the invention are capable of greatly increasing the temperature difference between the coolant passage in the base body of the base station and the heater embedded in the second insulation layer, so as to meet the needs of manufacturing procedures.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of plasma process chamber and base station thereof.
Background technology
Plasma treatment chamber utilizes the operation principle of vacuum reaction chamber to carry out the processing of the substrate of semiconductor chip and plasma flat-plate.The operation principle of vacuum reaction chamber is in vacuum reaction chamber, pass into the reacting gas containing suitable etchant source gas, and then radio-frequency (RF) energy input is carried out to this vacuum reaction chamber, with activated reactive gas, excite and maintain plasma, so that the material layer etched respectively on substrate surface or over the substrate surface depositing layer of material, and then semiconductor chip and plasma flat-plate are processed.
Plasma process chamber comprises a cavity, is provided with one for placing the base station of substrate below cavity, is provided with temperature-adjusting device for controlling the temperature of system and substrate in base station.Wherein, described temperature-adjusting device comprises the cooling fluid supply system being arranged at base station matrix and the heater layer being arranged at more than matrix.In some processing procedure, have clear and definite temperature difference requirement to thermostatic cooling fluid supply layer and heater layer, sometimes reach 50 degrees Celsius and more than.
Therefore, how the temperature difference of the cooling fluid supply layer in base station and heater layer is maintained scope needed for processing procedure, can not waste resource and energy again, be problem anxious to be resolved in the industry.
Summary of the invention
For the problems referred to above in background technology, the present invention proposes a kind of plasma process chamber and base station thereof.
First aspect present invention provides a kind of base station for plasma process chamber, and wherein, described base station comprises:
Base station matrix, is wherein provided with cooling passage;
The superstructure of base station matrix comprises: the second insulating barrier, is wherein provided with heater; And the first insulating barrier be directly arranged on this second insulating barrier, be wherein provided with electrostatic attraction electrode;
Wherein, in the material layer between the described cooling passage upper surface place plane and described second insulating barrier lower surface of described base station matrix, some cavities are provided with.
Further, between described base station matrix and described second insulating barrier, also comprise a temperature isolation layer, in this temperature isolation layer, be provided with some cavities.
Further, in described base station matrix, the region be positioned on described cooling passage is provided with some cavities.
Further, described base station matrix is made up of Titanium.
Further, the region below at least cooling passage upper surface in described base station matrix is made up of Titanium.
Further, the main body of described temperature isolation layer is made up of Titanium.
Further, in described temperature isolation layer, at least its region not comprising some cavities is made up of Titanium.
Further, the volume range in described cavity accounts for 30% to 90% of the material layer cumulative volume between described cooling passage upper surface and described second insulating barrier lower surface.
Further, described cooling passage is also circumscribed with a coolant circulation unit by some pipelines, and described coolant circulation unit is used for circulation provides cooling fluid.
Further, described heater is also circumscribed with a supply unit.
Further, described DC electrode also has a DC power supply in the external world.
Second aspect present invention provides a kind of plasma process chamber, and wherein, described plasma further, be made up of Titanium by described base station matrix.
Further, the region below at least cooling passage upper surface in described base station matrix is made up of Titanium.
Further, the main body of described temperature isolation layer is made up of Titanium.
Further, in described temperature isolation layer, at least its region not comprising some cavities is made up of Titanium.
A kind of plasma process chamber provided by the invention and base station thereof greatly can increase the temperature difference between heater embedded in cooling passage and the second insulating barrier in the matrix in base station, to meet needed for processing procedure.
Accompanying drawing explanation
Fig. 1 is the structural representation of plasma process chamber;
Fig. 2 is the structural representation of the base station of plasma process chamber according to the present invention's specific embodiment;
Fig. 3 is the structural representation of the base station of plasma process chamber according to the present invention's specific embodiment.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
It is to be noted; " semiconductor arts piece ", " wafer " and " substrate " these words often will be exchanged use in explanation subsequently; in the present invention; they all refer to that, in the processed process conditions of process chamber, process conditions is not limited to wafer, substrate, substrate, large-area flat-plate substrate etc.For convenience of description, mainly exemplary illustration will be made for " substrate " herein in execution mode illustrates and illustrates.
Fig. 1 shows the structural representation of plasma process chamber.Plasma process chamber 100 has a process chambers (not shown), and process chambers is essentially cylindricality, and process chambers sidewall 102 perpendicular, there is in process chambers top electrode arranged in parallel and bottom electrode.Usually, the region between top electrode and bottom electrode is processing region P, this region P by formation high-frequency energy to light and maintain plasma.Above base station 106, place substrate W to be processed, this substrate W can be the semiconductor chip treating to etch or to process or the glass plate treating to be processed into flat-panel monitor.Wherein, described base station 106 is provided with electrostatic chuck for clamping substrate W.Reacting gas is input to the gas spray 109 in process chambers from gas source 103, one or more radio-frequency power supply 104 can be applied individually on the bottom electrode or is applied on top electrode and bottom electrode respectively simultaneously, in order to be transported on bottom electrode by radio-frequency power or on top electrode and bottom electrode, thus produce large electric field in process chambers inside.In the involved processing region P between the upper and lower electrodes of most of electric field line, this electric field accelerates the electronics being present in process chambers inside on a small quantity, makes it the gas molecule collision with the reacting gas inputted.These collisions cause exciting of the ionization of reacting gas and plasma, thus produce plasma in process chambers.The neutral gas molecule of reacting gas loses electronics when standing these highfields, leaves the ion of positively charged.The ion of positively charged accelerates towards bottom electrode direction, and the neutral substance in processed substrate is combined, and excites substrate to process, i.e. etching, deposit etc.Certain suitable position of plasma process chamber 100 is provided with exhaust gas region, and exhaust gas region is connected with external exhaust apparatus (such as vacuum pump 105), in order to extract chamber out by by the reacting gas crossed and bi-product gas in processing procedure.Wherein, plasma confinement ring 107 for by plasma confinement in processing region P.Chamber sidewall 102 is connected with earth terminal, is wherein provided with a resistance 108.
Fig. 2 is the structural representation of the base station of plasma process chamber according to the present invention's specific embodiment.As shown in Figure 1, base station 106 comprises a matrix 1061, is provided with some cooling passages 1062 for reducing base station 106 and the temperature of substrate W that it is placed in described matrix 1061.Wherein, cooling passage connects a coolant circulation unit (not shown) for 1062 times, and coolant circulation unit provides cooling liquid for circulating to the cooling passage 1062 be arranged in base station main body 1061.The superiors of base station 106 are provided with one deck first insulating barrier 1063, are wherein embedded with electrostatic attraction electrode 1064.Wherein, described electrostatic attraction electrode 1064 is circumscribed with an electrostatic potential source (not shown), is held on above the first insulating barrier 1063 carries out processing procedure for generation of electrostatic adsorption force thus by substrate W.Below this first insulating barrier 1063, be provided with the second insulating barrier 1066, be wherein embedded with heater 1065.Heater 1065 is made of metal, and is likely whole piece formula structure, also can be some little sheet metals substantially in the same plane.Heater 1065 external power supply device, thus heating makes base station 106 and the problem of substrate W that it is placed get a promotion when being energized.Therefore, the temperature-adjusting device of base station 106 is made up of coolant circulation passage 1062 and heater 1065, and the former is for cooling, and the latter is used for heating up, both actings in conjunction, the temperature of the substrate W of Collaborative Control base station 106 and upper placement thereof.
Address above, in some particular process, processing procedure needs the temperature difference between heater 1065 lower surface embedded in cooling passage 1062 upper surface place plane and the second insulating barrier 1066 in the matrix 1061 in base station 106 to reach certain numerical value, such as, be greater than 50 DEG C.
Heat formula is:
Wherein, Q is heat, A is constant coefficient, K is thermal conductivity, material thickness between heater 1065 embedded in cooling passage 1062 and the second insulating barrier 1066 in Δ x and matrix 1061 is relevant, and Δ T then represents the temperature difference between heater 1065 embedded in cooling passage 1062 and the second insulating barrier 1066 in matrix 1061.
Heat Q can not change, because cause in order to the temperature difference between heater 1065 embedded in cooling passage in matrix 1,061 1062 and the second insulating barrier 1066, thermal energy consumption is too high loses more than gain.Therefore, when heat Q and A is constant, what can change only has Δ x and K.Because the material thickness between heater 1065 embedded in cooling passage in Δ x and matrix 1,061 1062 and the second insulating barrier 1066 is relevant, because the vacuum space of plasma process chamber inside is limited, therefore can not increase material thickness between heater 1065 embedded in cooling passage 1062 and the second insulating barrier 1066 in matrix 1061 to increase Δ x, thus widen Δ T.Therefore to improve the temperature difference Δ T between heater 1065 embedded in cooling passage 1062 and the second insulating barrier 1066 in matrix 1061, can only thermal conductivity K be changed.
Wherein, thermal conductivity K is the average thermal conductivity of the material between heater 1065 embedded in cooling passage 1062 and the second insulating barrier 1066 in matrix 1061 in fact.The matrix 1061 of the base station 106 of traditional plasma process chamber is generally by aluminium or aluminium alloy processing procedure, and their thermal conductivity is probably 167w/m-k.In heat formula, other parameters neither become, reduce the average thermal conductivity K of the material between heater 1065 embedded in cooling passage 1062 and the second insulating barrier 1066 in matrix 1061, just can improve the temperature difference Δ T between heater 1065 embedded in cooling passage 1062 and the second insulating barrier 1066 in matrix 1061.Therefore, the material of the matrix 1061 of base station 106 can be replaced to the lower material of thermal conductivity, such as Titanium, its thermal conductivity is only 15 ~ 25w/m-k, be probably the matrix 1061 that the aluminium of 167w/m-k or aluminium alloy are made compared to script thermal conductivity, the temperature difference Δ T between heater 1065 embedded in cooling passage 1062 and the second insulating barrier 1066 in matrix 1061 obtains rising.
As shown in Figure 2, in order to raise the temperature difference Δ T between heater 1065 embedded in cooling passage 1062 and the second insulating barrier 1066 in matrix 1061 further, the present invention is provided with some cavities in the material layer between the described cooling passage 1062 upper surface place plane and described second insulating barrier 1066 lower surface of described base station matrix 1061.Because the thermal conductivity of air is only 0.0257w/m-k, therefore the equivalent thermal conductivity being provided with the material layer between the described cooling passage 1062 of the base station matrix 1061 in some cavities and described second insulating barrier 1066 have also been obtained very big reduction, temperature difference Δ T between the described cooling passage 1062 of base station matrix 1061 and described second insulating barrier 1066 is significantly improved, meets needed for processing procedure.
It should be noted that, as shown in figures 2 and 3, cooling passage 1062 mentioned above not occupies the whole plane of board matrix 1061, and from base station 106 cross section, cooling passage 1062 is spaced.But the plane at the upper surface place of the described cooling passage 1062 of base station matrix 1061 mentioned above refers to the continuous print plane of the base station 106 that lies across.
Alternatively, as shown in Figure 2, also comprise a temperature isolation layer 1067 between described base station matrix 1061 and described second insulating barrier 1066, in this temperature isolation layer 1067, be provided with some empty G1.
Alternatively, as shown in Figure 3, in described base station matrix 1061, the region be positioned on described cooling passage 1062 is provided with some empty G2.
Typically, described base station matrix 1061 is made up of Titanium.Preferably, the region below at least cooling passage 1062 upper surface in described base station matrix 1061 is made up of Titanium.
Alternatively, the main body of described temperature isolation layer 1067 is made up of Titanium.
It should be noted that, cavity is arranged in temperature isolation layer 1067 or in described base station matrix 1061, the region be positioned on described cooling passage 1062 all can realize goal of the invention of the present invention, as long as just passable between the region of cavity in described base station matrix 1061 on described cooling passage 1062.
As for temperature isolation layer 1067 or the material of base station matrix 1061, it is preferably Titanium.But, if partly the material of temperature isolation layer 1067 or base station matrix 1061 is replaced to other metals also can realize goal of the invention of the present invention, if in matrix 1061 between cooling passage 1062 and the second insulating barrier 1066 equivalent thermal conductivity of material lower than the thermal conductivity 15 ~ 25w/m-k of Titanium.
Typically, the volume range in described cavity accounts for 30% to 70% of the material layer cumulative volume between described cooling passage upper surface and described second insulating barrier lower surface, comprises 31%, 33.5%, 38%, 45%, 47.77%, 50%, 53%, 55%, 61%, 64%, 67%, 85%, 87.55%, 88% etc.
Second aspect present invention provides a kind of plasma process chamber, and wherein, described plasma process chamber comprises the base station 106 described in first aspect present invention.
Alternatively, as shown in Figure 3, in described base station matrix 1061, the region be positioned on described cooling passage 1062 is provided with some empty G2.
Typically, described base station matrix 1061 is made up of Titanium.Preferably, the region below at least cooling passage 1062 upper surface in described base station matrix 1061 is made up of Titanium.
Alternatively, the main body of described temperature isolation layer 1067 is made up of Titanium.
It should be noted that, cavity is arranged in temperature isolation layer 1067 or in described base station matrix 1061, the region be positioned on described cooling passage 1062 all can realize goal of the invention of the present invention, as long as just passable between the region of cavity in described base station matrix 1061 on described cooling passage 1062.
As for temperature isolation layer 1067 or the material of base station matrix 1061, it is preferably Titanium.But, if partly the material of temperature isolation layer 1067 or base station matrix 1061 is replaced to other metals also can realize goal of the invention of the present invention, if in matrix 1061 between cooling passage 1062 and the second insulating barrier 1066 equivalent thermal conductivity of material lower than the thermal conductivity 15 ~ 25w/m-k of Titanium.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.In addition, any Reference numeral in claim should be considered as the claim involved by restriction; " comprise " word and do not get rid of device unlisted in other claim or specification or step; The word such as " first ", " second " is only used for representing title, and does not represent any specific order.
Claims (16)
1. for a base station for plasma process chamber, wherein, described base station comprises:
Base station matrix, is wherein provided with cooling passage;
The superstructure of base station matrix comprises: the second insulating barrier, is wherein provided with heater; And the first insulating barrier be directly arranged on this second insulating barrier, be wherein provided with electrostatic attraction electrode;
Wherein, in the material layer between the described cooling passage upper surface place plane and described second insulating barrier lower surface of described base station matrix, some cavities are provided with.
2. base station according to claim 1, is characterized in that, also comprises a temperature isolation layer between described base station matrix and described second insulating barrier, in this temperature isolation layer, be provided with some cavities.
3. base station according to claim 1, is characterized in that, in described base station matrix, the region be positioned on described cooling passage is provided with some cavities.
4. the base station according to Claims 2 or 3, is characterized in that, described base station matrix is made up of Titanium.
5. the base station according to Claims 2 or 3, is characterized in that, the region below at least cooling passage upper surface in described base station matrix is made up of Titanium.
6. the base station according to Claims 2 or 3, is characterized in that, the main body of described temperature isolation layer is made up of Titanium.
7. the base station according to Claims 2 or 3, is characterized in that, in described temperature isolation layer, at least its region not comprising some cavities is made up of Titanium.
8. base station according to claim 1, is characterized in that, the volume range in described cavity accounts for 30% to 90% of the material layer cumulative volume between described cooling passage upper surface and described second insulating barrier lower surface.
9. base station according to claim 1, is characterized in that, described cooling passage is also circumscribed with a coolant circulation unit by some pipelines, and described coolant circulation unit is used for circulation provides cooling fluid.
10. base station according to claim 9, is characterized in that, described heater is also circumscribed with a supply unit.
11. base stations according to claim 10, is characterized in that, the described DC electrode also external world has a DC power supply.
12. 1 kinds of plasma process chamber, wherein, described plasma process chamber comprises the base station according to any one of claims 1 to 3,8 to 11.
13. plasma process chamber according to claim 12, is characterized in that, described base station matrix is made up of Titanium.
14. plasma process chamber according to claim 12, is characterized in that, the region below at least cooling passage upper surface in described base station matrix is made up of Titanium.
15. plasma process chamber according to claim 12, is characterized in that, the main body of described temperature isolation layer is made up of Titanium.
16. plasma process chamber according to claim 12, is characterized in that, in described temperature isolation layer, at least its region not comprising some cavities is made up of Titanium.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410113448.4A CN104952682A (en) | 2014-03-25 | 2014-03-25 | Plasma treatment chamber and base station thereof |
| TW103145978A TWI623051B (en) | 2014-03-25 | 2014-12-29 | A plasma processing chamber and a base thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410113448.4A CN104952682A (en) | 2014-03-25 | 2014-03-25 | Plasma treatment chamber and base station thereof |
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| CN104952682A true CN104952682A (en) | 2015-09-30 |
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| CN201410113448.4A Pending CN104952682A (en) | 2014-03-25 | 2014-03-25 | Plasma treatment chamber and base station thereof |
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| CN201156132Y (en) * | 2008-02-21 | 2008-11-26 | 北京京东方光电科技有限公司 | Electrostatic absorption station |
| US20090159590A1 (en) * | 2007-12-21 | 2009-06-25 | Shinko Electric Industries Co., Ltd. | Substrate temperature adjusting-fixing devices |
| US20110079367A1 (en) * | 2009-10-01 | 2011-04-07 | Tokyo Electron Limited | Temperature control method and temperature control system for substrate mounting table |
| US20130148253A1 (en) * | 2011-12-07 | 2013-06-13 | Shinko Electric Industries Co., Ltd. | Substrate temperature adjusting-fixing device and manufacturing method thereof |
| US8637794B2 (en) * | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
| CN103578900A (en) * | 2012-08-06 | 2014-02-12 | 中微半导体设备(上海)有限公司 | Plasma processing device and static chuck thereof |
| CN103633003A (en) * | 2012-08-28 | 2014-03-12 | 中微半导体设备(上海)有限公司 | Static chuck |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465312A (en) * | 2007-12-18 | 2009-06-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Cartridge unit for fixing wafer and capable of controlling temperature with region |
| JP5224855B2 (en) * | 2008-03-05 | 2013-07-03 | 東京エレクトロン株式会社 | Electrode unit, substrate processing apparatus, and temperature control method for electrode unit |
| CN103578899B (en) * | 2012-08-06 | 2016-08-24 | 中微半导体设备(上海)有限公司 | Apparatus for processing plasma and electrostatic chuck thereof |
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2014
- 2014-03-25 CN CN201410113448.4A patent/CN104952682A/en active Pending
- 2014-12-29 TW TW103145978A patent/TWI623051B/en active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090159590A1 (en) * | 2007-12-21 | 2009-06-25 | Shinko Electric Industries Co., Ltd. | Substrate temperature adjusting-fixing devices |
| CN201156132Y (en) * | 2008-02-21 | 2008-11-26 | 北京京东方光电科技有限公司 | Electrostatic absorption station |
| US20110079367A1 (en) * | 2009-10-01 | 2011-04-07 | Tokyo Electron Limited | Temperature control method and temperature control system for substrate mounting table |
| US8637794B2 (en) * | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
| US20130148253A1 (en) * | 2011-12-07 | 2013-06-13 | Shinko Electric Industries Co., Ltd. | Substrate temperature adjusting-fixing device and manufacturing method thereof |
| CN103578900A (en) * | 2012-08-06 | 2014-02-12 | 中微半导体设备(上海)有限公司 | Plasma processing device and static chuck thereof |
| CN103633003A (en) * | 2012-08-28 | 2014-03-12 | 中微半导体设备(上海)有限公司 | Static chuck |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI623051B (en) | 2018-05-01 |
| TW201537657A (en) | 2015-10-01 |
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Application publication date: 20150930 |